Optoelectronic semiconductor component and method for manufacturing an optoelectronic semiconductor component

Abstract

To provide an optoelectronic semiconductor component exhibiting improved efficiency.SOLUTION: There is disclosed an optoelectronic semiconductor component 1 that includes a semiconductor body 10 having a first injection region 100 in which a first protection region 101 is formed, a second injection region 200 in which a second protection region 201 is formed, and an active region 300 which is designed to generate electromagnetic radiation and which is arranged between the first injection region 100 and the second injection region 200. The first injection region 100 and the first protection region 101 have a first conductivity type. The second injection region 200 and the second protection region 201 have a second conductivity type. The first protection region 101 extends along a lateral surface 10A of the semiconductor body 10 from a side of the first injection region 100 facing away from the active region 300 into the second injection region 200 and completely passes through the active region 300. There is further disclosed a method for producing the optoelectronic semiconductor component 1.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] An optoelectronic semiconductor component and a method for manufacturing the optoelectronic semiconductor component are disclosed. [Background technology]

[0002] In particular, optoelectronic semiconductor components are intended to generate and / or detect electromagnetic radiation, preferably light that is perceptible to the human eye. Summary of the Invention [Problem to be solved by the invention]

[0003] The problem to be solved is to identify optoelectronic semiconductor components that exhibit improved efficiency.

[0004] Another problem to be solved is to provide a simplified method for manufacturing optoelectronic semiconductor components with improved efficiency. [Means for solving the problem]

[0005] According to at least one embodiment, an optoelectronic semiconductor component comprises a semiconductor body having a first implanted region in which a first protective region is formed and a second implanted region in which a second protective region is formed.

[0006] The semiconductor body in particular comprises a plurality of epitaxially grown layers of semiconductor material that are deposited on top of one another in a stacking direction that therefore extends transversely, in particular perpendicularly, to the main extension direction of the semiconductor body. For example, the semiconductor body is a monolithically formed semiconductor crystal.

[0007] The first injection region is a region of the semiconductor body intended for injection of charge carriers, for example, holes, into the semiconductor body, and the first protection region is formed in the first injection region. In particular, the first injection region is a region of the semiconductor body into which a first doping material is introduced.

[0008] The second injection region is another region of the semiconductor body intended for injection of charge carriers, for example, electrons into the semiconductor body, and the second protection region is formed in the second injection region. In particular, the second injection region is a further region of the semiconductor body into which a second doping material is introduced.

[0009] By means of the first and second protective regions, a preferential distribution of charge carrier density within the semiconductor body can be generated during operation of the optoelectronic semiconductor component.

[0010] The semiconductor body further comprises an active region arranged to generate electromagnetic radiation and disposed between the first and second implantation regions. The active region may have a pn junction and a double heterostructure for radiation generation or detection. The semiconductor component may be, for example, a light-emitting diode, particularly an LED or laser diode. The first and second implantation regions are provided to inject charge carriers into the active region.

[0011] According to at least one embodiment of the optoelectronic semiconductor component, the first implanted region and the first protective region have a first conductivity type. The conductivity type can be generated by doping the semiconductor material with impurity atoms. For example, the first conductivity type is p-type, in which the majority of charge carriers are provided by holes. Preferably, the first implanted region and the first protective region have different dopant concentrations.

[0012] According to at least one embodiment of the optoelectronic semiconductor component, the second implantation region and the second protection region have a second conductivity type. For example, the second conductivity type is n-type, in which the majority of charge carriers are provided by electrons. Preferably, the second implantation region and the second protection region have different dopant concentrations. In particular, the second conductivity type is different from the first conductivity type.

[0013] According to at least one embodiment of the optoelectronic semiconductor component, the dopant concentration in the first protective region is higher than the dopant concentration in the first implanted region.

[0014] A higher dopant concentration can locally affect charge carrier density during operation of the optoelectronic semiconductor component. For example, a higher dopant concentration in the first protected region can reduce the density of minority charge carriers in the first protected region. This can selectively reduce the density of charge carriers in areas where non-radiative recombination processes reduce the efficiency of the semiconductor component.

[0015] According to at least one embodiment of the optoelectronic semiconductor component, the dopant concentration of the second protective region is higher than the dopant concentration of the second implanted region. The increased dopant concentration in the second protective region can affect the extension of the first protective region in the stacking direction. In particular, the increased dopant concentration in the second protective region reduces the extension of the first protective region parallel to the stacking direction in the direction of the second protective region.

[0016] According to at least one embodiment of the optoelectronic semiconductor component, the second protective region is arranged on the side of the second implanted region opposite the active region. By arranging the second implanted region on the side opposite the active region, the extension of the first protective region in the stack direction can be controlled in a targeted and relatively simple manner.

[0017] According to at least one embodiment of the optoelectronic semiconductor component, the first protective region extends along the side of the semiconductor body from the side of the first implanted region opposite the active region into the second implanted region, completely through the active region. The side can extend along the stacking direction of the semiconductor body or transversely to the main extension direction of the semiconductor body. For example, the side can be arranged at an angle of, in particular, between 60° and 70° to the main extension direction, resulting in a trapezoidal cross section of the semiconductor body. Furthermore, the side can also be arranged parallel to the stacking direction or perpendicular to the main extension direction of the semiconductor body. Preferably, the side of the semiconductor body, particularly preferably the side of the active region, is completely covered by the first protective region.

[0018] This technique utilizes the knowledge that the side surfaces of the semiconductor body can be a source of non-radiative recombination processes. By covering the side surfaces with a first protective region, the charge carrier density at the side surfaces can be reduced, and thus the probability of non-radiative recombination processes can also be reduced. For example, the first protective region at least partially surrounds the semiconductor body laterally, preferably at least in the region of the active region.

[0019] In particular, the bandgap of the active region is locally widened within the first protective region by means of quantum well intermixing within the active region, whereby during operation the minority charge carrier density is correspondingly locally reduced, thus advantageously reducing non-radiative recombination at the lateral sides near the first protective region.

[0020] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises: a semiconductor body having a first implanted region having a first protective region formed therein, a second implanted region having a second protective region formed therein, and an active region disposed between the first implanted region and the second implanted region for generating electromagnetic radiation; the first implanted region and the first protective region have a first conductivity type; the second implanted region and the second protective region have a second conductivity type; a dopant concentration in the first protected region is greater than a dopant concentration in the first implanted region; the dopant concentration in the second protected region is greater than the dopant concentration in the second implanted region; the second protective region is located on an opposite side of the second implanted region from the active region; the first protective region extends laterally along the semiconductor body from the side of the first implanted region opposite the active region into the second implanted region and completely through the active region;

[0021] The optoelectronic semiconductor components described herein are based, inter alia, on the consideration that undesirable non-radiative recombination effects can occur at the side surfaces of semiconductor bodies. This effect is particularly important in red-emitting μLEDs based on indium gallium aluminum phosphide semiconductor material because this material has a high surface recombination velocity and a large charge carrier diffusion length. These properties generate a high probability of non-radiative recombination at the side surfaces of the semiconductor body. This effect increases as the lateral expansion of the semiconductor body decreases, because smaller bodies have proportionally more lateral surfaces per volume.

[0022] The optoelectronic semiconductor component described herein utilizes, among other things, the concept of introducing a first protective region along the side of the semiconductor body in the first and second implanted regions. The first protective region reduces the carrier density at the side of the semiconductor body, thereby reducing the probability of non-radiative recombination. As a result, the efficiency of the optoelectronic semiconductor component is advantageously increased.

[0023] According to at least one embodiment of the optoelectronic semiconductor component, the semiconductor body is based on a phosphide compound semiconductor material, in particular InGaAlP, or an arsenide compound semiconductor material, in particular AlGaAs, which exhibit a particularly high surface recombination rate, for which measures regarding non-radiative recombination are particularly useful.

[0024] In this context, a "phosphor compound semiconductor material system" refers to a semiconductor body or at least a part thereof, particularly preferably at least the active region and / or the growth substrate wafer, preferably Al n Ga m In 1-n-m P or As n Ga m In 1-n-m P, where 0≦n≦1, 0≦m≦1 and n+m≦1. In other words, the semiconductor body or at least a part thereof, particularly preferably at least the active region and / or the growth substrate wafer, is (InGa 1-x Al x ) y P 1-y As a result, the material does not necessarily have to have a mathematically strict structure according to the above formula. Rather, it may include one or more dopants as well as additional components. However, for simplicity, the above formula includes only the essential components of the crystal lattice (Al or As, Ga, In, P), which may be partially replaced by small amounts of other substances.

[0025] In the present context, an "arsenic compound semiconductor material system" refers to a semiconductor body or at least a part thereof, particularly preferably at least the active region and / or the growth substrate wafer, preferably Al n Ga m In 1-n-m n includes As, where 0≦n≦1, 0≦m≦1, and n+m≦1. The material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may include one or more dopants as well as additional components. For simplicity, the above formula includes only the essential components of the crystal lattice (Al or As, Ga, In), which may be partially replaced by small amounts of other substances.

[0026] In at least one embodiment of the optoelectronic semiconductor component, a shielding region is arranged between the first and second protective regions. The shielding region is, for example, an epitaxially grown region of the semiconductor body. In particular, the shielding region has the second conductivity type.

[0027] Preferably, the shielding region is formed of a semiconductor material having a surface recombination velocity lower than that of the material of the second implanted region. A lower surface recombination velocity can advantageously reduce the probability of non-radiative recombination, thereby increasing the efficiency of the optoelectronic semiconductor component. In particular, the surface recombination velocity in the shielding region is less than 1×10 4 cm / s~1×10 6 cm / s, and preferably the surface recombination velocity in the shielding region is greater than 1×10 5 It has a value less than cm / s.

[0028] According to at least one embodiment of the optoelectronic semiconductor component, the shielding region has a lower aluminum content than the second implanted region, particularly in layers based on phosphide or arsenide compound semiconductor materials, which allows a reduced surface recombination velocity to be achieved by the low aluminum content.

[0029] According to at least one embodiment of the optoelectronic component, the shielding region has a structure of the formula (InGa1- x Al x ) 0.49 P 0.51 Such a composite shielding region advantageously exhibits a particularly low surface recombination velocity.

[0030] According to at least one embodiment of the optoelectronic semiconductor component, the shielding region has a lower surface recombination velocity than the second implanted region, and by means of the lower recombination velocity, the probability of non-radiative recombination is advantageously reduced in the shielding region.

[0031] According to at least one embodiment of the optoelectronic semiconductor component, the dopant concentration in the shielding region is at least two times higher, preferably at least four times higher, than the dopant concentration in the first protective region. The dopant concentration in the shielding region can be used, inter alia, to determine how far the first protective region extends into the second implanted region. If the dopant concentration in the shielding region is two to four times higher, the first protective region advantageously terminates within the shielding region.

[0032] In at least one embodiment of the optoelectronic semiconductor component, the first protective region terminates within the shielding region, which has a particularly low surface recombination velocity. When the first protective region terminates within the shielding region, the low surface recombination velocity of the material of the shielding region advantageously reduces the probability of non-radiative recombination for the pn junction formed therein.

[0033] According to at least one embodiment of the optoelectronic semiconductor component, the first protective region is arranged outside the core region. The core region extends through the center of the semiconductor body, particularly parallel to the stacking direction. The core region is therefore spaced apart from the side surfaces of the semiconductor body, preferably on all sides. For example, a higher charge carrier density exists in the core region than in the first protective region.

[0034] According to at least one embodiment of the optoelectronic semiconductor component, the dopant concentration in the second protective region is at least two times higher, and preferably at least four times higher, than the dopant concentration in the first protective region. For example, the dopant concentration in the second protective region is 4×10 17 cm -3 and 10 x 10 17 cm -3 The dopant concentration in the second protective region can be used to, among other things, determine how far the first protective region extends into the second implanted region. At dopant concentrations two to four times higher, the first protective region advantageously terminates at the shielding region.

[0035] According to at least one embodiment of the optoelectronic device, the first implanted region and the second implanted region each have a structure represented by the formula (InGa 1-x Al x ) 0.49 P 0.51 Such compositions are advantageous for forming optoelectronic semiconductor components intended to emit electromagnetic radiation in the red spectral region.

[0036] According to at least one embodiment of the optoelectronic semiconductor component, the first protective region is doped with one of the following materials: magnesium, zinc. The dopant for the first protective region is optimally an impurity atom, which allows for a variable doping level in the first protective region and has as high a diffusion rate as possible. Zinc is preferably used because of its particularly fast diffusion rate. The second protective region is doped with one of the following materials, for example, tellurium, silicon.

[0037] According to at least one embodiment of the optoelectronic semiconductor component, the active region is formed as a quantum well structure, preferably as a multiple quantum well structure. The quantum well structure is, for example, a single quantum well structure (SQW) or a multiple quantum well structure (MQW). By means of the quantum well structure, particularly efficient radiative recombination of charge carriers can be achieved. Furthermore, the band gap in a quantum well structure can be particularly easily influenced by quantum well intermixing.

[0038] In at least one embodiment of the optoelectronic semiconductor component, the active region is intended to emit electromagnetic radiation in the wavelength range of 580 nm to 1 μm, preferably in the wavelength range of 580 nm to 660 nm. For semiconductor components with an emission spectrum in the 580 nm to 660 nm range, the aluminum content in the material is usually particularly high. This disadvantageously leads to a high surface recombination velocity, which is why measures against non-radiative recombination processes are particularly useful.

[0039] According to at least one embodiment of the optoelectronic semiconductor component, the lateral extension of the semiconductor body is less than 100 μm, preferably less than 50 μm, particularly preferably less than 20 μm. The lateral extension refers to the extension of the semiconductor body in a direction parallel to the main extension direction of the semiconductor body and transverse to the stacking direction of the semiconductor body. A small lateral extension allows, for example, the use of the optoelectronic semiconductor component as a pixel in a high-resolution display device.

[0040] Further disclosed is a method for manufacturing an optoelectronic semiconductor component, which can in particular be manufactured by the means described herein, i.e. all features disclosed in relation to a method for manufacturing an optoelectronic semiconductor component are also disclosed for the optoelectronic semiconductor component and vice versa.

[0041] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, in step A) a semiconductor body is provided having a first implanted region, a second implanted region in which a second protective region is formed, and an active region for generating electromagnetic radiation, arranged between the first and second implanted regions, the first implanted region has a first conductivity type; the second implanted region and the second protective region have a second conductivity type; the dopant concentration in the second protected region is greater than the dopant concentration in the second implanted region; The second protective region is located on the opposite side of the second implantation region from the active region. Preferably, a plurality of semiconductor bodies are provided within the wafer composite. For example, the semiconductor bodies are part of a continuous semiconductor stack.

[0042] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, in step B) a mask region is applied to the face of the first implanted region facing away from the active region, the mask region having a smaller lateral extent than the first implanted region in top view and being centrally located above the first implanted region, preferably completely covering the core region of the semiconductor body.

[0043] In particular, the mask region is weakly or not transparent to the material introduced as a dopant into the first implantation region. Therefore, the introduction of the first dopant can be advantageously limited to a region outside the core region of the semiconductor body. For example, the mask material is applied to the entire surface of the semiconductor body. In particular, the mask region is patterned in a photolithography process. Preferably, multiple mask regions are arranged in parallel on multiple semiconductor bodies in the wafer compound and patterned in a common process step.

[0044] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, in step C), a first dopant material is introduced into the first implanted region to form a first protective region having a first conductivity type, extending laterally along the semiconductor body from a surface of the first implanted region opposite the active region into the second implanted region and completely through the active region, the dopant concentration in the first protective region being higher than the dopant concentration in the first implanted region. For example, the first dopant material is introduced into the first implanted region by implantation.

[0045] The diffusion depth of the first dopant is largely determined by the level of doping in the second protective region, and the vertical extent of the first protective region can be adjusted in a controlled manner by appropriate selection of the doping level in the second protective region.

[0046] The introduction of the first dopant material is at least partially blocked by the mask region so that penetration of the first dopant material into the core region is reduced or avoided. Thus, the first protective region is particularly formed on a side surface of the semiconductor body outside the core region.

[0047] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, step C) is performed in such a way that the bandgap of the active region in the first protective region is widened by quantum well intermixing. Due to the locally widened bandgap in the active region, a reduction in the charge carrier density at the side surfaces of the semiconductor body can be achieved during operation of the semiconductor component. Non-radiative recombination at the side surfaces of the semiconductor body is therefore advantageously reduced or avoided.

[0048] The generation of sufficient quantum well intermixing depends, for example, on the duration of process step C). For example, sufficient quantum well intermixing in the active region in the first protective region is advantageously carried out for a duration of more than 4 minutes. Step C) is preferably carried out for a period of at least 15 minutes, particularly preferably at least 45 minutes.

[0049] According to at least one embodiment of the method for manufacturing an optoelectronic component, the introduction of the first dopant substance in step C) is carried out by means of diffusion, which allows a particularly gentle introduction of the dopant material without causing any radiation damage to the crystal lattice of the semiconductor body.

[0050] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, in step A) a semiconductor body is provided which further comprises a shielding region between the first and second protective regions, the shielding region being formed in particular from an epitaxially grown semiconductor material, the shielding region in particular having the second conductivity type.

[0051] Preferably, the shielding region is formed of a semiconductor material having a surface recombination velocity lower than that of the material of the second implanted region. A lower surface recombination velocity can advantageously reduce the probability of non-radiative recombination, thereby increasing the efficiency of the optoelectronic semiconductor component. In particular, a surface recombination velocity in the shielding region of 1×10 4 cm / s~1×10 6 cm / s, and preferably the surface recombination velocity in the shielding region is 1×10 5 It has a value less than cm / s.

[0052] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, in step C), a first dopant material is introduced into the first implanted region to form a first protective region having a first conductivity type, so that the first protective region extends from a side of the first implanted region opposite the active region, into the shielding region, along the side of the semiconductor body, and completely through the active region, and the dopant concentration in the shielding region is higher than in the first protective region.

[0053] The dopant concentration in the shielding region can be used to, among other things, set how far the first protected region extends into the second implanted region: if the dopant concentration in the shielding region is 2 to 4 times higher, the first protected region advantageously terminates within the shielding region.

[0054] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor component, the final shape of the optoelectronic semiconductor component is defined in a subsequent step D) by a common structuring process for generating lateral faces, for example having an angle of 60° to 70° relative to the main extension direction of the semiconductor body.

[0055] The optoelectronic semiconductor components described herein are particularly suitable for use as μLEDs in display devices, such as displays.

[0056] Further advantages and advantageous embodiments of the optoelectronic semiconductor component as well as further embodiments result from the following exemplary embodiments shown in conjunction with the drawings. [Brief explanation of the drawings]

[0057] [Figure 1] 1 is a schematic cross-sectional view of an optoelectronic semiconductor component according to a first embodiment of the present invention; [Figure 2] 3 is a schematic cross-sectional view of an optoelectronic semiconductor component according to a second embodiment of the present invention; [Figure 3] 1 is a schematic top view of an optoelectronic semiconductor component according to a first embodiment of the present invention; [Figure 4] 3 shows a schematic representation of the dopant concentration as well as the bandgap variation along the stacking direction of an optoelectronic semiconductor component as described herein according to a second exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0058] Components that are identical, similar, or have the same effect are given the same reference signs in the figures. The figures and the proportions of the components shown in the figures should not be considered to scale. Rather, individual components may be shown exaggeratedly large for better representability and / or for better understandability.

[0059] 1 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 according to a first embodiment of the present invention. The optoelectronic semiconductor component 1 comprises a semiconductor body 10 having, along a stack direction S, a second protection region 201 in which a second implanted region 200 is formed, an active region 300, and a first implanted region 100 in which a first protection region 101 is formed.

[0060] The electrical contact 20 is arranged on the side of the first injection region 100 opposite the active region 300. Furthermore, the electrical contact 20 is arranged on the side of the second protection region 201 opposite the active region 300. The electrical contact 20 is made of metal. By means of the electrical contact 20, the optoelectronic semiconductor component 1 is electrically connected and charge carriers are injected into the semiconductor body 10.

[0061] The mask region 30 is arranged on the electrical contact 20 facing the first implantation region 100. The mask region 30 is in particular barely transparent or non-transparent to the first doping material with which the first protection region 101 is doped. The mask region 30 can be removed in a further process step and is then no longer included in the finished optoelectronic semiconductor component 1.

[0062] The stacking direction S extends transversely, in particular perpendicularly, to the main extension direction of the active region 300. The semiconductor body 10 has a side surface 10A extending parallel to the stacking direction S. The first protection region 101 extends along the side surface 10A of the semiconductor body 10 in the first implanted region 100 into the second implanted region 200 and completely through the active region 300.

[0063] The first implanted region 100 and the first protected region 101 have a first conductivity type. The second implanted region 200 and the second protected region 201 have a second conductivity type. For example, the first conductivity type is p-type conductivity and the second conductivity type is n-type conductivity.

[0064] The level of dopant concentration in the second protective region 201 influences the extent of the first protective region 101 in the stacking direction S. Advantageously, the dopant concentration of the second protective region 201 is selected such that the first protective region 101 ends within the second implanted region 200.

[0065] At the center of the semiconductor body 10, in a top view parallel to the stacking direction S, there is a core region 500 in which the first protection region 101 is not present. The core region 500 is spaced apart on all sides from the side surfaces 10A of the semiconductor body 10. The core region 500 is at least partially covered by the shielding region 30. The lateral extent of the first protection region 101 can be adjusted by the lateral extent of the shielding region 30.

[0066] In the first protective region 101, the bandgap of the active region 300 is locally widened by means of quantum wells intermixing with the active region 300. This reduces the lateral diffusion of charge carriers in the active region 300 towards the side surface 10A. This results in a lower carrier concentration at the side surface 10A of the active region 300. As a result, the non-radiative recombination probability in the optoelectronic semiconductor component 1 is advantageously reduced.

[0067] 2 shows a schematic cross-sectional view of an optoelectronic semiconductor component 1 as described herein according to a second exemplary embodiment. The second embodiment essentially corresponds to the first embodiment. In contrast, in the second exemplary embodiment shown in FIG. 2, the semiconductor body 10 further comprises a shielding region 400 having a second conductivity type, which is arranged between the first protection region 101 and the second protection region 201.

[0068] Shielding region 400 is formed of a material with a lower aluminum fraction than second implanted region 200. The lower aluminum fraction in shielding region 400 advantageously reduces the surface recombination velocity within shielding region 400. Therefore, the probability of non-radiative recombination in shielding region 400 is lower.

[0069] The dopant concentration levels in the shielding region 400 and the second protective region 201 affect the extent of the first protective region 101 in the stacking direction S. Advantageously, the dopant concentration in the shielding region 400 is selected so that the first protective region 101 terminates at the shielding region 400. Also, the dopant concentration in the second implanted region 200 is sufficiently low. For example, the dopant concentration in the second implanted region 200 is lower than the dopant concentration in the first protective region 101. In contrast, the dopant concentration in the shielding region 400 is preferably at least two times higher, preferably at least four times higher, than the dopant concentration in the first protective region 101.

[0070] Due to the fact that the first protective region 101 ends within the shielding region 400, the pn junction formed therein advantageously exhibits a particularly low probability of non-radiative surface recombination events.

[0071] 3 shows a schematic top view of an optoelectronic semiconductor component 1 described herein according to a first exemplary embodiment. In the top view, the lateral extension L of the semiconductor body 10 is evident. The lateral extension L extends from a side surface 10A of the semiconductor body 10 to an opposite side surface 10A of the semiconductor body 10. The semiconductor body 10 does not necessarily have to have a square or rectangular shape. For example, the lateral extension L can also be considered as the diameter of a circular semiconductor body 10.

[0072] In a top view of semiconductor body 10, implanted region 100 and first protective region 101 are visible. At the center of semiconductor body 10, a core region 500 is shown that is devoid of first protective region 101. Core region 500 is completely surrounded laterally by first protective region 101 and is spaced apart on all sides from side surface 10A of semiconductor body 10. This results in all side surfaces 10A of semiconductor body 10 being covered by first protective region 101. As a result, the probability of non-radiative recombination at side surface 10A is advantageously reduced.

[0073] FIG. 4 shows a schematic diagram of variations in n-dopant concentration N, p-dopant concentration P and bandgap E along the stack direction S of an optoelectronic semiconductor component 1 described herein according to a second embodiment.

[0074] The progression of the bandgap E along the stacking direction S is shown across the second protective region 201, the shielding region 400, the second implanted region 200, the active region 300, and the first implanted region 100. In the active region 300, there are multiple layers with different bandgaps E.

[0075] The n-dopant concentration N has a maximum value in the second protective region 201 and steadily decreases along the stacking direction S through the shielding region 400. The p-dopant concentration P has a maximum value in the first implanted region 100 and steadily decreases toward the stacking direction S in the direction of the active region 300. In the first protective region 101, the p-dopant concentration P has a higher value than in the first implanted region 100 and therefore extends opposite the stacking direction S through the active region 300 and partially through the second implanted region 200 into the shielding region 400.

[0076] The maximum value of the n-dopant concentration N in the second protective region 201 is at least two times, preferably at least four times, higher than the value of the p-dopant concentration P in the first protective region 101, thus ensuring that the extension of the first protective region 101 in the stacking direction S ends within the shielding region 400.

[0077] It should be noted that the present invention is not limited to these embodiments, but rather includes any novel feature and any combination of features, and particularly includes any combination of features in the claims, even if that feature or combination itself is not explicitly recited in the claims or exemplary embodiments.

[0078] This patent application claims priority from German Patent Application No. 102021100534.5, the disclosure of which is incorporated herein by reference. [Explanation of symbols]

[0079] 1. Optoelectronic semiconductor components 10 Semiconductor body 20 Contact area 30 Mask Area 100 first injection region 101 First Protection Area 200 Second injection region 201 Second Protection Area 300 active area 400 shielded area 500 Core Area 10A Side L Lateral extension S Stacking direction E band gap energy P p-dopant concentration N n-dopant concentration

Claims

1. a semiconductor body (10) having a first implanted region (100) in which a first protective region (101) is formed, a second implanted region (200) in which a second protective region (201) is formed, and an active region (300) intended to generate electromagnetic radiation and arranged between the first implanted region (100) and the second implanted region (200); a shielding area (400) disposed between the first protection area (101) and the second protection area (201); the first implanted region (100) and the first protective region (101) have a first conductivity type; the second implanted region (200) and the second protective region (201) have a second conductivity type; the dopant concentration in the first protective region (101) is higher than in the first implanted region (100); the dopant concentration in the second protection region (201) is higher than in the second implantation region (200); the second protection region (201) is disposed on the opposite side of the second implantation region (200) from the active region (300); the first protection region (101) extends along a side (10A) of the semiconductor body (10) from the side of the first implantation region (100) opposite the active region (300) into the second implantation region (200) and completely through the active region (300); An optoelectronic semiconductor component (1), wherein the dopant concentration in said shielding region (400) is at least two times higher than the dopant concentration in said first protective region (101).

2. 2. The optoelectronic semiconductor component (1) according to claim 1, wherein the semiconductor body (10) is based on a phosphide compound semiconductor material, in particular InGaAlP, or an arsenide compound semiconductor material, in particular AlGaAs.

3. 3. An optoelectronic semiconductor component (1) according to claim 1 or 2, wherein the shielding region (400) is formed from epitaxially grown semiconductor material.

4. An optoelectronic semiconductor component (1) according to any one of claims 1 to 3, wherein the shielding region (400) comprises a smaller proportion of aluminium than the second implanted region (200).

5. The shielding region (400) has the formula (InGa １－ｘ Al ｘ ) ０．４９ P ０．５１ An optoelectronic semiconductor component (1) according to any one of claims 1 to 4, having a composition according to

6. An optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the shielding region (400) has a lower surface recombination velocity than the second implanted region (200).

7. An optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the dopant concentration in the shielding region (400) is at least four times higher than the dopant concentration in the first protective region (101).

8. An optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the first protective area (101) terminates within the shielding area (400).

9. An optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the first protective region (101) is arranged outside a core region (500).

10. 10. The optoelectronic semiconductor component (1) according to claim 9, wherein the core region (500) is at least partially covered by a shielding region (30).

11. The first implanted region (100) and the second implanted region (200) each have the formula (InGa １－ｘ Al ｘ ) ０．４９ P ０．５１ An optoelectronic semiconductor component (1) according to any one of claims 1 to 10, based on a material having a composition according to

12. An optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the first protective region (101) is doped with one of the following materials: Mg, Zn.

13. An optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the active region (300) is formed as a quantum well structure.

14. Optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the active region (300) is intended to emit electromagnetic radiation in the wavelength range from 580 nm to 1 μm.

15. Optoelectronic semiconductor component (1) according to any one of the preceding claims, wherein the lateral extension (L) of the semiconductor body (10) is less than 100 μm.

16. A method for manufacturing an optoelectronic semiconductor component (1), comprising the steps of: A) Providing a semiconductor body (10) having a first implanted region (100), a second implanted region (200) in which a second protective region (201) is formed, and an active region (300) intended to generate electromagnetic radiation and located between the first implanted region (100) and the second implanted region (200), - said first implanted region (100) has a first conductivity type; - said second implanted region (200) and said second protective region (201) have a second conductivity type; - the dopant concentration in said second protective region (201) is higher than in the second implanted region (200); - providing said second protection region (201) located on the opposite side of said second implantation region (200) from said active region (300); B) providing a mask region (30) on the side of the first implant region (100) opposite the active region (300), the mask region (30) having a lateral extension (L) smaller than the first implant region (100) in top view and being centrally located over the first implant region (100); C) introducing a first dopant material into the first implanted region (100) to form a first protective region (101) having a first conductivity type along a side (10A) of the semiconductor body (10) from a side of the first implanted region (100) opposite the active region (300) to the second implanted region (200) and extending completely through the active region (300); the dopant concentration in the first protective region (101) is higher than in the first implanted region (100); In the method A), a semiconductor body (10) is provided, which further includes a shielding region (400) between the first protection region (101) and the second protection region (201), 1. A method for manufacturing an optoelectronic semiconductor component (1), wherein the dopant concentration in the shielding region (400) is at least two times higher than the dopant concentration in the first protective region (101).

17. 17. The method for producing an optoelectronic semiconductor component (1) according to claim 16, wherein step C) is performed such that the band gap (E) of the active region (300) in the first protective region (101) is widened by quantum well intermixing.

18. 18. Method for producing an optoelectronic semiconductor component (1) according to claim 16 or 17, wherein the introduction of the first dopant material into the first implanted region (100) in C) is performed by diffusion.

19. Method for manufacturing an optoelectronic semiconductor component (1) according to any one of claims 16 to 18, wherein the shielding area (400) is formed of epitaxially grown semiconductor material.

20. 20. The method for producing an optoelectronic semiconductor component according to claim 19, wherein in step C), the step of introducing the first dopant material into the first implanted region to form a first protective region having a first conductivity type is performed such that the first protective region extends along a side of the semiconductor body from a side of the first implanted region opposite the active region to the shielding region and completely through the active region.

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