Plasma processing equipment and components

Abstract

To shorten a lead time when manufacturing components.SOLUTION: A mounting table includes a base formed of a conductive material, an electrostatic chuck disposed on an upper surface of the base and formed of a ceramic material, and a boundary layer provided between the base and the electrostatic chuck, the boundary layer includes a mixture of the conductive material and the ceramic material, a composition ratio of the conductive material to the ceramic material in the mixture varies in the boundary layer from the base toward the electrostatic chuck.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a mounting table and a component for a plasma processing apparatus. [Background technology]

[0002] In recent years, components provided in plasma processing apparatuses have become more complex in structure in order to achieve higher functionality, and may be manufactured by adhering or joining different members (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-46185 Summary of the Invention [Problem to be solved by the invention]

[0004] The manufacturing of such parts involves complex structures such as hollow structures, which require long production and development periods, resulting in increased lead times for parts manufacturing. There is a need to reduce the number of steps in the parts manufacturing process and shorten lead times.

[0005] In response to the above problem, one object of the present invention is to shorten the lead time when manufacturing parts. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, a mounting table is provided, comprising: a base formed of a conductive material; an electrostatic chuck formed of a ceramic material and disposed on an upper surface of the base; and a boundary layer provided between the base and the electrostatic chuck, wherein the boundary layer contains a mixture of the conductive material and the ceramic material, and the composition ratio of the conductive material to the ceramic material in the mixture changes in the boundary layer from the base toward the electrostatic chuck. [Effects of the Invention]

[0007] According to one aspect, the lead time for manufacturing parts can be shortened. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an embodiment. [Figure 2] 2 is an enlarged view of a portion of the mounting table of the plasma processing apparatus shown in FIG. 1. [Figure 3] FIG. 1 is a diagram showing an example of the configuration of a 3D printer according to an embodiment. [Figure 4] 10 is a flowchart illustrating an example of a part forming process according to an embodiment. [Figure 5] 1A to 1C are diagrams illustrating a method for forming a component according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0010] [Plasma processing equipment] The plasma processing apparatus 100 shown in FIG. 1 is a capacitively coupled plasma processing apparatus. The plasma processing apparatus 100 includes a processing vessel 112 and a mounting table 116. The processing vessel 112 has a substantially cylindrical shape, and its internal space serves as a processing chamber 112c. The processing vessel 112 is made of, for example, aluminum. A plasma-resistant ceramic coating, such as an alumite film and / or an yttrium oxide film, is formed on the surface of the processing vessel 112 facing the internal space. The processing vessel 112 is grounded. An opening 112p is formed in the sidewall of the processing vessel 112 to load and unload a wafer W into and from the processing chamber 112c. The opening 112p can be opened and closed by a gate valve GV.

[0011] The mounting table 116 is configured to support the wafer W in the processing chamber 112c. The mounting table 116 has a function of attracting the wafer W, a function of adjusting the temperature of the wafer W, and a structure for transmitting high frequency waves to a base 117 of the electrostatic chuck. Details of the mounting table 116 will be described later.

[0012] The plasma processing apparatus 100 includes an upper electrode 130. The upper electrode 130 is disposed in an upper opening of a processing chamber 112 and is disposed substantially parallel to a mounting table 116 that functions as a lower electrode. An insulating support member 132 is interposed between the upper electrode 130 and the processing chamber 112.

[0013] The upper electrode 130 has a top plate 134 and a support 136. The top plate 134 has a substantially disc-like shape. The top plate 134 may be conductive. The top plate 134 is made of, for example, silicon or aluminum, and has a plasma-resistant ceramic coating formed on its surface. A plurality of gas discharge holes 134a are formed in the top plate 134. The gas discharge holes 134a extend in a substantially vertical direction.

[0014] The support 136 detachably supports the top plate 134. The support 136 is made of, for example, aluminum. A gas diffusion chamber 136a is formed in the support 136. A plurality of holes 136b extend from the gas diffusion chamber 136a, each of which communicates with a plurality of gas discharge holes 134a. A pipe 138 is connected to the gas diffusion chamber 136a via a port 136c. A gas supply unit 139 is connected to the pipe 138.

[0015] The plasma processing apparatus 100 includes an exhaust system 150. The exhaust system 150 includes one or more pumps, such as a turbomolecular pump or a dry pump, and a pressure control valve. The exhaust system 150 is connected to an exhaust port formed in the processing chamber 112.

[0016] The plasma processing apparatus 100 includes a first control unit 151. A storage unit of the first control unit 151 stores control programs and recipe data for controlling various processes executed by the plasma processing apparatus 100 using a processor. For example, the storage unit of the first control unit 151 stores a control program and recipe data for executing a plasma process such as an etching process in the plasma processing apparatus 100.

[0017] 1 and 2, the mounting table 116 and the components of the plasma processing apparatus 100 associated with the mounting table 116 will be described in detail below. Fig. 2 is an enlarged cross-sectional view showing a portion of the mounting table 116 of the plasma processing apparatus 100 shown in Fig. 1.

[0018] The mounting table 116 includes a base 117 and an electrostatic chuck 120. The base 117 is made of, for example, aluminum alloy (Al), titanium (Ti), silicon carbide (SiC), or the like. The base 117 is supported by a support member 114 extending upward from the bottom of the processing vessel 112. The support member 114 is an insulating member and is made of, for example, aluminum oxide (alumina). The support member 114 has a substantially cylindrical shape.

[0019] The base 117 is made of a conductive metal, such as aluminum. The base 117 has a substantially disk shape. The base 117 has a central portion 117a and a peripheral portion 117b. The central portion 117a has a substantially disk shape. The central portion 117a provides a first upper surface 117c of the base 117. The first upper surface 117c is a substantially circular surface.

[0020] The peripheral portion 117b is continuous with the central portion 117a and extends in the circumferential direction (circumferential direction relative to the axis Z) outside the central portion 117a in the radial direction (radial direction relative to the axis Z extending in the vertical direction). In one embodiment, the peripheral portion 117b, together with the central portion 117a, provides the lower surface 117d of the base 117. The peripheral portion 117b also provides the second upper surface 117e. The second upper surface 117e is a band-shaped surface that is located outside the first upper surface 117c in the radial direction and extends in the circumferential direction. The second upper surface 117e is closer to the lower surface 117d in the vertical direction than the first upper surface 117c.

[0021] A power feeder 119 is connected to the base 117. The power feeder 119 is, for example, a power feed rod, and is connected to the lower surface 117d of the base 117. The power feeder 119 is made of aluminum or an aluminum alloy. A first high-frequency power supply 62 is connected to the power feeder 119 via a matching box 66. A second high-frequency power supply 64 is also connected to the power feeder 119 via a matching box 68.

[0022] A flow path 117f for the refrigerant is formed in the base 117. The flow path 117f extends, for example, in a spiral shape within the base 117. A refrigerant is supplied to this flow path 117f from a chiller unit. In one embodiment, the refrigerant supplied to the flow path 117f is a refrigerant that absorbs heat by vaporizing and performs cooling. This refrigerant may be, for example, a hydrofluorocarbon refrigerant.

[0023] The electrostatic chuck 120 has an attraction portion 123. The attraction portion 123 is provided on a base 121 on the base 117. The base 121 constitutes a lower electrode and is provided on the base 117. The base 121 is electrically conductive. The base 121 may be made of ceramics such as aluminum nitride or silicon carbide that has been made electrically conductive, or may be made of a metal (e.g., titanium).

[0024] The base 121 has a substantially disc shape. The base 121 has a central portion 121a and a peripheral portion 121b. The central portion 121a has a substantially disc shape. The central portion 121a provides a first upper surface 121c of the base 121. The first upper surface 121c is a substantially circular surface.

[0025] The peripheral portion 121b is continuous with the central portion 121a and extends circumferentially radially outward of the central portion 121a. In one embodiment, the peripheral portion 121b, together with the central portion 121a, provides the lower surface 121d of the base 121. The peripheral portion 121b also provides the second upper surface 121e. The second upper surface 121e is a strip-shaped surface that extends circumferentially radially outward of the first upper surface 121c. The second upper surface 121e is closer to the lower surface 121d than the first upper surface 121c in the vertical direction.

[0026] A boundary layer 129 is formed between the adsorption portion 123 and the base 121. The adsorption portion 123 has a substantially disk shape and is made of ceramics. The ceramics that make up the adsorption portion 123 has a thermal conductivity of 1×10 in a temperature range of room temperature (for example, 20°C) or higher and 400°C or lower. 15 The ceramic may be one having a volume resistivity of Ω·cm or more. For example, aluminum oxide (alumina) may be used as such a ceramic.

[0027] The electrostatic chuck 120 includes multiple regions RN concentric with the axis Z, i.e., the central axis of the electrostatic chuck 120. In one embodiment, the electrostatic chuck 120 includes a first region R1, a second region R2, and a third region R3. The first region R1 intersects the axis Z, the third region R3 includes an edge of the electrostatic chuck 120, and the second region R2 is located between the first region R1 and the third region R3. In one example, the first region R1 is a region extending from the center of the electrostatic chuck 120 to a radius of 120 mm, the second region R2 is a region extending from a radius of 120 mm to a radius of 135 mm on the electrostatic chuck 120, and the third region R3 is a region extending from a radius of 135 mm to a radius of 150 mm on the electrostatic chuck 120. Note that the number of regions in the electrostatic chuck 120 may be any number greater than or equal to one.

[0028] The attracting portion 123 of the electrostatic chuck 120 incorporates an electrode film 125. A DC power supply is electrically connected to the electrode film 125. When a DC voltage from the DC power supply is applied to the electrode film 125, the attracting portion 123 generates an electrostatic force such as Coulomb force, and holds the wafer W by the electrostatic force.

[0029] The attraction unit 123 further includes a plurality of built-in heaters HN. The plurality of heaters HN are provided in the plurality of regions RN of the electrostatic chuck, respectively. In one embodiment, the plurality of heaters HN include a first heater 156, a second heater 157, and a third heater 158. The first heater 156 is provided in the first region R1, the second heater 157 is provided in the second region R2, and the third heater 158 is provided in the third region R3. The plurality of heaters HN are connected to a heater power supply.

[0030] A plurality of first elastic members EM1 are provided between the base 121 and the base 117. The plurality of first elastic members EM1 space the electrostatic chuck 120 above the base 117. Each of the plurality of first elastic members EM1 is an O-ring. The plurality of first elastic members EM1 have different diameters and are provided concentrically with respect to the axis Z. The plurality of first elastic members EM1 are provided below the boundary between adjacent regions of the electrostatic chuck 120 and the edge of the electrostatic chuck 120. In one embodiment, the plurality of first elastic members EM1 includes an elastic member 165, an elastic member 167, and an elastic member 169. The elastic member 165 is provided below the boundary between the first region R1 and the second region R2, the elastic member 167 is provided below the boundary between the second region R2 and the third region R3, and the elastic member 169 is provided below the edge of the electrostatic chuck 120.

[0031] The plurality of first elastic members EM1 are partially disposed in grooves formed by the first upper surface 117c of the base 117 and are in contact with the first upper surface 117c and the lower surface 121d of the base 121. The plurality of first elastic members EM1, together with the base 117 and the base 121, define a plurality of heat transfer spaces DSN between the first upper surface 117c of the base 117 and the lower surface 121d of the base 121. The plurality of heat transfer spaces DSN extend below each of the plurality of regions RN of the electrostatic chuck 120 and are separated from one another. In one embodiment, the plurality of heat transfer spaces DSN include a first heat transfer space DS1, a second heat transfer space DS2, and a third heat transfer space DS3. The first heat transfer space DS1 is located inside the elastic member 165, the second heat transfer space DS2 is located between the elastic member 165 and the elastic member 167, and the third heat transfer space DS3 is located between the elastic member 167 and the elastic member 169. As will be described later, a heat transfer gas (e.g., He gas) is supplied to the plurality of heat transfer spaces DSN. The length of each of the plurality of heat transfer spaces DSN in the vertical direction is set to, for example, 0.1 mm or more and 2.0 mm or less.

[0032] The multiple first elastic members EM1 are configured to have a thermal resistance higher than the thermal resistance of each of the multiple heat transfer spaces DSN to which He gas is supplied. The thermal resistance of the multiple heat transfer spaces DSN depends on the thermal conductivity of the heat transfer gas, its vertical length, and its area. The thermal resistance of each of the multiple first elastic members EM1 also depends on its thermal conductivity, its vertical thickness, and its area. Therefore, the material, thickness, and area of ​​each of the multiple first elastic members EM1 are determined according to the thermal resistance of each of the multiple heat transfer spaces DSN. The multiple first elastic members EM1 may be required to have low thermal conductivity and high heat resistance. Therefore, the multiple first elastic members EM1 may be formed from, for example, a perfluoroelastomer.

[0033] The mounting table 116 has a clamping member 171. The clamping member 171 is made of metal and configured to sandwich the base 121 and the plurality of first elastic members EM1 between the clamping member 171 and the base 117. The clamping member 171 is made of a material having low thermal conductivity, such as titanium, in order to suppress heat conduction between the base 121 and the base 117 via the clamping member 171.

[0034] In one embodiment, the fastening member 171 has a tubular portion 171a and an annular portion 171b. The tubular portion 171a has a generally cylindrical shape and provides a first lower surface 171c at its lower end. The first lower surface 171c is a band-shaped surface extending in the circumferential direction.

[0035] The annular portion 171b has a generally annular plate shape, is continuous with the inner edge of the upper part of the cylindrical portion 171a, and extends radially inward from the cylindrical portion 171a. The annular portion 171b provides a second lower surface 171d. The second lower surface 171d is a band-shaped surface extending in the circumferential direction.

[0036] The fastening member 171 is disposed so that the first lower surface 171c contacts the second upper surface 117e of the base 117 and the second lower surface 171d contacts the second upper surface 121e of the base 121. The fastening member 171 is fixed to the peripheral edge portion 117b of the base 117 with screws 173. The amount of compression of the plurality of first elastic members EM1 is adjusted by adjusting the engagement of the screws 173 with the fastening member 171. This adjusts the vertical length of the plurality of heat transfer spaces DSN.

[0037] In one embodiment, a second elastic member 175 is provided between the lower surface of the inner edge of the annular portion 171b of the fastening member 171 and the second upper surface 121e of the base 121. The second elastic member 175 is an O-ring, and prevents particles (e.g., metal powder) that may be generated by friction between the second lower surface 171d of the fastening member 171 and the second upper surface 121e of the base 121 from moving toward the adsorption portion 123.

[0038] Furthermore, the second elastic member 175 generates a reaction force that is smaller than the reaction force generated by the plurality of first elastic members EM1. In other words, the plurality of first elastic members EM1 are configured so that the reaction force generated by the plurality of first elastic members EM1 is larger than the reaction force generated by the second elastic member 175. Furthermore, the second elastic member 175 may be formed from a perfluoroelastomer, which is a material that has high heat resistance and low thermal conductivity.

[0039] A heater 176 is provided on the fastening member 171. The heater 176 extends in the circumferential direction and is connected to a heater power supply via a filter. The filter is provided to prevent high frequency waves from entering the heater power supply.

[0040] The heater 176 is provided between the first film 180 and the second film 182. The first film 180 is provided on the fastening member 171 side of the second film 182. The first film 180 has a thermal conductivity lower than that of the second film 182. For example, the first film 180 may be a thermally sprayed film made of zirconia, and the second film 182 may be a thermally sprayed film made of yttrium oxide (yttria). Alternatively, the heater 176 may be a thermally sprayed film of tungsten.

[0041] An edge ring FR is provided on the second film 182. The edge ring FR is made of, for example, Si. The edge ring FR is heated by heat from the heater 176. Furthermore, most of the heat flux from the heater 176 is directed toward the second film 182 rather than the first film 180, and then directed toward the edge ring FR via the second film 182. Therefore, the edge ring FR is efficiently heated.

[0042] The outer periphery of the base 117 of the mounting table 116, the clamping member 171, etc. is covered with one or more insulating members 186. The one or more insulating members 186 are made of, for example, aluminum oxide or quartz.

[0043] As described above, in the mounting table 116, the base 117 and the base 121 are separated from each other by the multiple first elastic members EM1. Furthermore, in the mounting table 116, no adhesive is used to bond the base 121 and the attraction portion 123. Therefore, the temperature of the electrostatic chuck 120 can be set to a high temperature. Furthermore, because heat exchange between the electrostatic chuck 120 and the base 117 can be achieved through the heat transfer gas supplied to the multiple heat transfer spaces DSN, the temperature of the electrostatic chuck 120 can also be set to a low temperature. Furthermore, in the mounting table 116, a high-frequency power supply route to the base 121 of the electrostatic chuck 120 is ensured by the power supply body 119, the base 117, and the fastening member 171. Furthermore, because the power supply body 119 is connected to the base 117 rather than directly to the base 121 of the electrostatic chuck 120, aluminum or an aluminum alloy can be used as the material for the power supply body 119. Therefore, even when a high frequency of 13.56 MHz or higher is used, the loss of the high frequency in the power feeder 119 is suppressed.

[0044] Furthermore, as described above, in one embodiment, the second elastic member 175 is provided between the lower surface of the inner edge portion of the annular portion 171b of the fastening member 171 and the second upper surface 121e of the base 121. Because the second upper surface 121e of the peripheral portion 121b of the base 121 and the second lower surface 171d of the fastening member 171 are in contact with each other, friction occurs at the contact points, which may result in the generation of particles (e.g., metal powder). Even if such particles are generated, the second elastic member 175 can prevent the particles from adhering to the suction portion 123 and the wafer W placed on the suction portion 123.

[0045] Furthermore, the plurality of first elastic members EM1 are configured so that the reaction force generated by the plurality of first elastic members EM1 is greater than the reaction force generated by the second elastic member 175. This allows the electrostatic chuck 120 to be reliably separated from the base 117.

[0046] In one embodiment, the plurality of first elastic members EM1 are configured to have a thermal resistance higher than the thermal resistance of the plurality of heat transfer spaces DSN when He gas is supplied to the plurality of heat transfer spaces DSN. The plurality of first elastic members EM1 are formed of, for example, perfluoroelastomer. With the plurality of first elastic members EM1, heat conduction between the electrostatic chuck 120 and the base 117 via the plurality of heat transfer spaces DSN is dominant over heat conduction via the plurality of first elastic members EM1. Therefore, the temperature distribution of the electrostatic chuck 120 can be made uniform.

[0047] In one embodiment, a gas line 190 for a heat transfer gas supplied between the wafer W and the adsorption unit 123 is formed without using an adhesive. A surface 121f of the base 121 that defines an accommodation space in which a sleeve 192 that partially constitutes the gas line 190 is disposed is covered with a coating 194, and an insulating third elastic member 196 is provided between the coating 194 and the base 117 to seal the accommodation space. This prevents plasma from penetrating between the base 121 and the base 117 and the resulting dielectric breakdown of the base 121.

[0048] Furthermore, the plasma processing apparatus 100 having the above-described mounting table 116 can perform plasma processing on the wafer W in a wide temperature range from low to high temperatures.

[0049] [3D printer configuration] Next, an example of the configuration of the 3D printer 200 will be described with reference to FIG. 3. FIG. 3 shows an example of the configuration of the 3D printer 200 according to one embodiment. The 3D printer 200 according to this embodiment is an example of an apparatus that forms (manufactures) parts used in a plasma processing apparatus. However, the apparatus that forms the parts is not limited to the configuration of the 3D printer 200 shown in FIG. 3.

[0050] In this embodiment, the mounting table 116, which functions as a lower electrode with a complex structure, will be described as an example of a part formed by the 3D printer 200. However, the part formed by the 3D printer 200 is not limited to this, and may be, for example, an upper electrode 130. For example, it may be a part containing different materials or a part in which different materials that cannot be bonded are fixed by screws. In addition, any part that is placed in the plasma processing apparatus 100 may be used.

[0051] The 3D printer 200 is capable of forming a three-dimensional object in a chamber 210. In the 3D printer 200 according to this embodiment, three-dimensional data for forming the mounting table 116 as a three-dimensional object is stored in a storage unit such as a RAM 256, and the mounting table 116 is manufactured based on the three-dimensional data. The mounting table 116 is formed on a mounting surface of a stage 202 provided on the table. The stage 202 can be raised and lowered, for example, so as to gradually lower, as the formation of the mounting table 116 progresses.

[0052] In this embodiment, raw material powder for forming the mounting table 116 is stored in a raw material storage section 203 provided on the table. The raw material may be the same as the material of each component constituting the mounting table 116. For example, if, among the components constituting the mounting table 116, the bases 117 and 121 are made of an aluminum alloy and the electrostatic chuck 120 is made of SiC, the raw material storage section 203 stores aluminum alloy powder and SiC powder separately.

[0053] However, the material of the bases 117 and 121 is not limited to aluminum alloy and may be ceramics such as SiC. Furthermore, the material of the electrostatic chuck 120 is not limited to SiC and may be ceramics such as alumina. When the bases 117 and 121 are made of SiC and the electrostatic chuck 120 is made of alumina, SiC powder and alumina powder are stored separately in the raw material storage unit 203. Note that the raw materials of the materials constituting the bases 117, 121, and the electrostatic chuck 120 are not limited to powder form and may be wire form. Furthermore, in this embodiment, the base 117 and the electrostatic chuck 120 are made of different materials.

[0054] An energy beam is irradiated to melt the raw material powder while the raw material powder is being supplied into the chamber 210. In this embodiment, a laser beam A (optical laser) is used as the energy beam to be irradiated.

[0055] Laser light A is output from a light source 206 and irradiated onto a predetermined position positioned by a laser scanning device 204 that performs two-dimensional scanning. The light source 206 and the laser scanning device 204 are preferably disposed outside the chamber 210. The second control unit 250 drives a laser driving unit 208 to move the laser scanning device 204 to a predetermined position.

[0056] The laser scanning device 204 scans the stage 202 with the laser beam A in at least two-dimensional (X and Y) directions. For example, the laser scanning device 204 is controlled to move the irradiation spot of the laser beam A on the stage 202 in accordance with three-dimensional data indicating the three-dimensional structure of the mounting table 116. Specifically, under the control of the second control unit 250, the laser scanning device 204 scans in two-dimensional (X and Y) directions in accordance with the progress of formation of parts such as the bases 117 and 121 and the electrostatic chuck 120 that constitute the mounting table 116.

[0057] The second control unit 250 controls the roller driving unit 207 to drive the roller 205. As a result, the aluminum alloy powder that is the material of the base 117 and / or the SiC powder that is the material of the electrostatic chuck 120 are supplied to the laser beam scanning space 209.

[0058] It is preferable that the temperature of the raw material storage section 203 is adjusted by a heating means. It is also preferable that the chamber 210 is provided with a mechanism capable of supplying an inert gas and evacuating the chamber 210.

[0059] The laser beam A scanned in two dimensions by the laser scanning device 204 is irradiated onto an irradiation area on the stage 202 through a laser transmission window 211 provided in the ceiling of the chamber 210, for example, directly above the center of the stage 202. The laser beam A heats the aluminum alloy powder and / or SiC powder on the stage 202 (see B in FIG. 3), melting and solidifying the powder to form the mounting table 116. In this way, the base 117 and the electrostatic chuck 120 are formed three-dimensionally in this order, completing the manufacture of the mounting table 116.

[0060] The second control unit 250 has a CPU 252, a ROM 254, and a RAM 256. The second control unit 250 controls the supply of raw material powder from the raw material storage unit 203 and the elevation of the stage 202. The second control unit 250 also controls the lighting of the light source 206, the scanning of the laser scanning device 204, and the roller driving unit 207 and the laser driving unit 208. In this way, the second control unit 250 controls the operation of manufacturing the mounting table 116.

[0061] The control program executed by the CPU 252 is stored, for example, in the ROM 254. The CPU 252 controls the manufacture of the mounting table 116 by executing the control program based on three-dimensional data stored, for example, in the RAM 256. The control program may be stored in a fixed recording medium, or in a removable, computer-readable recording medium such as various flash memories or optical (magnetic) disks.

[0062] Furthermore, the second control unit 250 has a display 258 and an input device 260 such as a keyboard or a pointing device. The display 258 is used to display the progress of repair of the edge ring 87. The input device 260 is used to issue commands such as starting and stopping the repair operation of the edge ring 87 and to input control parameters during setup.

[0063] The three-dimensional data is data for manufacturing the mounting table 116, and is stored in a storage unit such as the RAM 256. The three-dimensional data includes data on various components constituting the mounting table 116, such as the three-dimensional structure of the base 117, the hollow structure of the flow path 117f and the like within the base 117, the base 121, and the electrostatic chuck 120. The three-dimensional data also includes data on the three-dimensional structure of the electrostatic chuck 120, and the heater HN and electrode film 125 embedded in the electrostatic chuck 120. The three-dimensional data also includes data on boundary layers formed between the bases 117, 121, and the electrostatic chuck 120.

[0064] [3D printer operation] Next, an example of the operation of the 3D printer 200 will be described with reference to Fig. 4 and Fig. 5. Fig. 4 is a flowchart showing an example of a part formation process according to one embodiment. Fig. 5 is a diagram for explaining a part formation method according to one embodiment.

[0065] When this process starts, the second control unit 250 acquires the three-dimensional data stored in the RAM 256 (step S10). Based on the three-dimensional data, the second control unit 250 supplies aluminum alloy powder to the laser beam scanning space 209 while irradiating the powder with laser beam (step S12). At this time, the second control unit 250 controls the roller driving unit 207 to operate the roller 205 and supply the aluminum alloy powder to the laser beam scanning space 209. The second control unit 250 also controls the laser driving unit 208 to move the laser scanning device 204 to a predetermined position and irradiate the aluminum alloy powder with laser beam. The second control unit 250 repeatedly executes the above-described operations of supplying the aluminum alloy powder using the roller 205 and melting and solidifying it with the laser beam. In this way, the second control unit 250 completes the formation of the bases 117, 121 (step S14).

[0066] 5(1) shows a part of the process of forming the bases 117, 121. This process is an example of a first process in which the bases are formed by supplying aluminum alloy powder, which is an example of a metal raw material, and irradiating the powder with laser light. This allows the hollow structure of the flow channel 117f inside the base 117 to be precisely formed based on three-dimensional data.

[0067] Returning to FIG. 4, next, the second control unit 250 irradiates the aluminum alloy powder and SiC powder with laser light while changing the blending ratio and supplying the powder to the laser light scanning space 209 (step S16). At this time, the second control unit 250 gradually decreases the blending ratio of the aluminum alloy powder from 100% based on the three-dimensional data and continuously changes it to 0% while supplying it. Also, the second control unit 250 gradually increases the blending ratio of the SiC powder based on the three-dimensional data and continuously changes it to 100% while supplying it.

[0068] As a result, the blending ratio of aluminum alloy powder and SiC powder supplied to the laser beam scanning space 209 changes from a state in which there is a large amount of aluminum alloy to a state in which there is a large amount of SiC. The second control unit 250 repeatedly supplies aluminum alloy powder and SiC powder blended at a predetermined ratio to the laser beam scanning space 209 using the roller 205, and irradiates the aluminum alloy powder and SiC powder with laser light to melt and solidify them. As a result, the second control unit 250 completes the formation of the boundary layer 129 (step S18).

[0069] 5(2) shows an example of the step of forming the boundary layer 129. This step is an example of the second step of supplying a powder, which is a mixture of aluminum alloy powder, which is an example of a metal raw material, and SiC powder, which is an example of a ceramic raw material, at a predetermined ratio onto the base 121, and irradiating the powder with laser light to form a boundary layer on the base.

[0070] 4, next, the second control unit 250 irradiates the SiC powder with laser light while supplying the powder to the laser light scanning space 209 (step S20). The second control unit 250 repeatedly executes the above operation of supplying the SiC powder using the roller 205 and melting and solidifying it with the laser light. As a result, a ceramic layer that forms the adsorption portion 123 of the electrostatic chuck 120 is formed down to below the heater layer (step S22).

[0071] 5(3) shows an example of the ceramic layer forming step. This step is an example of the third step in which a ceramic layer (adsorption portion 123) is formed on the boundary layer 129 by supplying SiC powder, which is an example of a ceramic raw material, and irradiating the powder with laser light.

[0072] 4, next, the second control unit 250 irradiates the heater raw material powder with laser light while supplying the powder to the laser light scanning space 209 (step S24). The second control unit 250 supplies the heater raw material powder using the roller 205, and performs an operation of melting and solidifying the powder with laser light to form a heater layer in the adsorption unit 123.

[0073] 5(4) shows an example of the heater HN formation process. This process is an example of the fourth process in which the heater HN is formed by supplying the heater HN raw material powder and irradiating the heater HN raw material with an energy beam.

[0074] 4, next, the second control unit 250 irradiates the SiC powder with laser light while supplying the powder to the laser light scanning space 209 (step S26). The second control unit 250 repeatedly executes the above operation of supplying the SiC powder using the roller 205 and melting and solidifying it with the laser light. As a result, a ceramic layer that forms the adsorption portion 123 is formed down to below the electrode film (step S28).

[0075] Next, the second control unit 250 irradiates the powder with laser light while supplying the powder as a raw material for the electrode film to the laser light scanning space 209 (step S30). The second control unit 250 supplies the powder as a raw material for the electrode film using the roller 205, and performs an operation of melting and solidifying the powder with the laser light to form an electrode layer in the electrostatic chuck 120.

[0076] 5(5) shows an example of a step of forming an electrode layer (electrode film 125). This step is an example of a fifth step in which the electrode film 125 is formed by irradiating the raw material of the electrode film 125 with laser light while supplying powder of the raw material of the electrode film 125.

[0077] Returning to FIG. 4, next, the second control unit 250 irradiates the SiC powder with laser light while supplying the powder to the laser light scanning space 209 (step S32). The second control unit 250 repeatedly executes the operation of supplying the SiC powder using the roller 205 and melting and solidifying it with laser light. This forms the remaining ceramic layer of the adsorption portion 123 (step S34), and this process ends. This completes the formation of the adsorption portion 123 of the electrostatic chuck 120 shown in FIG. 5(6), and the manufacture of the mounting table 116 ends.

[0078] According to this component forming method, a boundary layer 129 is formed between the base 121 and the adsorption portion 123 by varying the material composition ratio of each component. In this case, by forming the boundary layer 129 of different materials smoothly and in a gradational shape, it is possible to eliminate the need for an adhesive layer on the mounting table 116. This improves the heat transfer coefficient between the different materials of the mounting table 116, thereby improving the thermal characteristics.

[0079] The mixture ratio of each material in the boundary layer 129 becomes higher the closer to the base 121 the aluminum alloy that is the material of the base 121 becomes relative to the SiC that is the material of the adsorption portion 123. Conversely, the closer to the adsorption portion 123 the mixture ratio of SiC that is the material of the adsorption portion 123 becomes relative to the aluminum alloy that is the material of the base 121.

[0080] In this way, boundary layer 129 is formed by melting and solidifying a material in which the blending ratio of aluminum alloy and SiC changes in a gradational manner, and then laminating it. The formation of boundary layer 129 in which the blending ratios of different materials change in a gradational manner and are laminated is also called "gradient lamination."

[0081] In the process of forming the boundary layer 129, the boundary layer 129 between the base 121 and the adsorption unit 123 is stacked at an angle, thereby improving the heat transfer coefficient between the different materials of the mounting table 116 compared to when the boundary layer 129 is not stacked at an angle. Furthermore, in the process of forming the boundary layer 129, the adhesive layer that bonds the base 121 and the adsorption unit 123 is eliminated, thereby reducing the number of manufacturing steps and shortening the manufacturing lead time.

[0082] Furthermore, by arranging the flow channel structure, wiring structure, etc. three-dimensionally, the mounting table 116 can be made highly functional.

[0083] In the 3D printer 200, the steps may be performed in the order of the first step → the second step → the third step, or the third step → the second step → the first step. This allows the 3D printer 200 to manufacture the upper electrode 130 that functions as an upper electrode, similar to the mounting table 2 that functions as a lower electrode.

[0084] [Boundary Layer 129 Variations] The boundary layer 129 is not limited to a slope-shaped (gradation-shaped) inclined lamination in which the blending ratio of the aluminum alloy powder and the SiC powder changes linearly. The boundary layer 129 may also be a step-shaped inclined lamination in which the blending ratio of the aluminum alloy powder and the SiC powder changes stepwise. Furthermore, the inclination of the boundary layer 129 (the blending ratio of each material) may be changed depending on the linear expansion coefficient of each material of the base 121 and the adsorption portion 123.

[0085] [Type of 3D printer] In this embodiment, a powder bed fusion 3D printer is used as an example of the 3D printer 200 that manufactures the mounting table 116. In a powder bed fusion 3D printer, a part is formed by repeatedly spreading powdered raw material on the stage 202, melting it with a laser beam or the like, and then spreading the powdered raw material again and melting it with a laser beam or the like. For this reason, a powder bed fusion 3D printer is suitable for manufacturing the mounting table 116 and upper electrode 130 structures, which have a clear three-dimensional structure to be formed in advance and have a complex structure such as a hollow structure.

[0086] However, the 3D printer 200 is not limited to this configuration and may be, for example, a directed energy 3D printer, or a 3D printer using a different method. Examples of 3D printers using a different method include binder injection 3D printers, sheet lamination 3D printers, photopolymerization curing (stereolithography) 3D printers, and material extrusion (fused deposition modeling) 3D printers.

[0087] Furthermore, when the material of the part to be manufactured is a resin material or ceramic, ultraviolet light is used as the energy beam in the process of irradiating an energy beam while supplying raw resin material, performed by the 3D printer. As a result, the part forming method according to this embodiment can form not only parts made of metal materials, but also parts made of resin or ceramic materials. An example of a 3D printer for parts made of resin or ceramic materials is a material-jet 3D printer, which uses ultraviolet light to solidify and layer resin sprayed from an inkjet head.

[0088] [Layered structure of different ceramics] Finally, we will briefly explain how to manufacture a part having a laminated structure of different ceramics using a 3D printer. For example, if the material of the base 121 is SiC and the material of the adsorption part 123 is alumina, the mounting table 116 is an example of a part having a laminated structure of different ceramics. In this case, the material of the base 121 is an example of a first ceramic raw material, and the material of the adsorption part 123 is an example of a second ceramic raw material different from the first ceramic.

[0089] In this method for forming a part having a laminated structure of different ceramics using the 3D printer 200, first, a step of irradiating an energy beam onto one of the raw materials, a first ceramic or a second ceramic, while supplying the raw material. For example, the second control unit 250 in FIG. 3 irradiates ultraviolet light onto the SiC powder while supplying the SiC powder into the laser beam scanning space 209 based on three-dimensional data. The energy beam irradiated in this step and the following steps is not limited to ultraviolet light, and may be light of another frequency band.

[0090] Next, a step of irradiating the raw materials with an energy beam while supplying the first ceramic raw material and the second ceramic raw material is executed. For example, the second control unit 250 irradiates the SiC powder and the alumina powder with ultraviolet light while supplying them to the laser beam scanning space 209 based on the three-dimensional data.

[0091] Finally, a step of irradiating the other raw material of the first ceramic and the second ceramic with an energy beam is performed while supplying the other raw material. For example, the second control unit 250 irradiates the alumina powder with ultraviolet light while supplying the alumina powder to the laser beam scanning space 209 based on the three-dimensional data. As a result, the mounting table 116 having a layered structure of the SiC base 121, the boundary layer 129, and the alumina adsorption portion 123 is formed using the 3D printer 200.

[0092] In the process of irradiating ultraviolet rays while supplying two types of ceramic powder, the second control unit 250 irradiates ultraviolet rays onto the powder while changing the blending ratio of SiC powder and alumina powder and supplying the powder into the laser beam scanning space 209. At this time, the second control unit 250 gradually decreases the blending ratio of SiC powder, which is the same as the material of the base, from 100% based on the three-dimensional data and continuously changes it to 0% while supplying it. Also, the second control unit 250 gradually increases the blending ratio of alumina powder, which is the same as the material of the electrostatic chuck 120, from 0% based on the three-dimensional data and continuously changes it to 100% while supplying it.

[0093] As a result, the SiC powder and alumina powder supplied to the laser beam scanning space 209 are supplied while changing in their blending ratio from a SiC-rich state to an alumina-rich state. The second control unit 250 repeatedly performs an operation of irradiating the SiC and alumina powder with varying blending ratios with ultraviolet light to melt and solidify them. As a result, the boundary layer 129 formed between the SiC base 121 and the alumina adsorption portion 123 is inclined and laminated.

[0094] In this manufacturing process, the boundary layer 129 between the base 121 and the adsorption unit 123 is stacked at an angle, thereby improving the heat transfer coefficient between the different materials of the mounting table 116. In addition, in this manufacturing process, the boundary layer 129 is stacked at an angle, eliminating the adhesive layer that bonds the base 121 and the adsorption unit 123, thereby reducing the number of manufacturing steps and shortening the manufacturing lead time.

[0095] Although the plasma processing apparatus and the components for the plasma processing apparatus have been described above using the above embodiments, the plasma processing apparatus and the components for the plasma processing apparatus according to the present invention are not limited to the above embodiments, and various modifications and improvements are possible within the scope of the present invention. The features described in the above embodiments can be combined within a range that does not contradict each other.

[0096] The plasma processing apparatus according to the present invention can be applied to any type of plasma processing apparatus, including Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0097] In this specification, a wafer W has been described as an example of a substrate, but the substrate is not limited to this and may be various substrates used in LCDs (Liquid Crystal Displays) and FPDs (Flat Panel Displays), CD substrates, printed circuit boards, etc.

[0098] The following is a note: [Appendix 1] a plasma treatment vessel; a plasma generating means for performing plasma processing in the plasma processing vessel; a component disposed in the plasma processing vessel; The part is The first ceramic, formed from a second ceramic different from the first ceramic, A plasma processing apparatus comprising a boundary layer formed while the blending ratio of the first ceramic and the second ceramic changes. [Appendix 2] The part is a first ceramic layer formed of the first ceramic; a second ceramic layer formed of the second ceramic; The boundary layer is provided between the first ceramic layer and the second ceramic layer. 2. The plasma processing apparatus according to claim 1. [Appendix 3] The boundary layer is formed by changing the compounding ratio of the first ceramic and the second ceramic continuously or stepwise. 3. The plasma processing apparatus according to claim 1 or 2. [Appendix 4] the first ceramic is alumina; the second ceramic is silicon carbide; 4. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. [Appendix 5] a plasma treatment vessel; a plasma generating means for performing plasma processing in the plasma processing vessel; a component to be placed in the plasma processing chamber; The part is Metal and It is made of ceramics, A plasma processing apparatus comprising a boundary layer formed while the compounding ratio of the metal and the ceramic changes. [Appendix 6] The part is a metal layer formed of the metal; a ceramic layer formed of the ceramic, The boundary layer is provided between the metal layer and the ceramic layer. 6. The plasma processing apparatus according to claim 5. [Appendix 7] The ceramic layer is It has a heater layer inside. 7. The plasma processing apparatus according to claim 6. [Appendix 8] The ceramic layer is having an electrode layer therein; 8. The plasma processing apparatus according to claim 6 or 7. [Appendix 9] The metal layer is A flow path is formed inside. 9. The plasma processing apparatus according to any one of claims 6 to 8. [Appendix 10] The boundary layer is formed by changing the compounding ratio of the metal and the ceramic continuously or stepwise. 10. The plasma processing apparatus according to any one of appendixes 5 to 9. [Appendix 11] the metal is aluminum; The ceramic is alumina or silicon carbide. 11. The plasma processing apparatus according to any one of claims 5 to 10. [Appendix 12] The first ceramic, formed from a second ceramic different from the first ceramic, A boundary layer is formed while the blending ratio of the first ceramic and the second ceramic changes. Parts for plasma processing equipment. [Appendix 13] a first ceramic layer formed of the first ceramic; a second ceramic layer formed of the second ceramic; The boundary layer is provided between the first ceramic layer and the second ceramic layer. 13. A part for a plasma processing apparatus according to claim 12. [Appendix 14] The boundary layer is formed by changing the compounding ratio of the first ceramic and the second ceramic continuously or stepwise. 14. A part for a plasma processing apparatus according to claim 12 or 13. [Appendix 15] the first ceramic is alumina; the second ceramic is silicon carbide; 15. The part for a plasma processing apparatus according to any one of claims 12 to 14. [Appendix 16] Metal and It is made of ceramics, A boundary layer is formed while the blending ratio of the metal and the ceramic changes. Parts for plasma processing equipment. [Appendix 17] a metal layer formed of the metal; a ceramic layer formed of the ceramic, The boundary layer is provided between the metal layer and the ceramic layer. 17. A part for a plasma processing apparatus according to claim 16. [Appendix 18] The ceramic layer is It has a heater layer inside. 18. A part for a plasma processing apparatus according to claim 17. [Appendix 19] The ceramic layer is having an electrode layer therein; 19. A part for a plasma processing apparatus according to claim 17 or 18. [Appendix 20] The metal layer is A flow path is formed inside. 20. The part for a plasma processing apparatus according to any one of appendices 17 to 19. [Appendix 21] The boundary layer is formed by changing the compounding ratio of the metal and the ceramic continuously or stepwise. 21. The part for a plasma processing apparatus according to any one of claims 16 to 20. [Appendix 22] the metal is aluminum; The ceramic is alumina or silicon carbide. 22. The part for a plasma processing apparatus according to any one of claims 16 to 21. [Explanation of symbols]

[0099] 62 First high frequency power supply 64 Second high frequency power supply 100 Plasma processing device 112 Processing vessel 116 Mounting table 117 Foundation 120 Electrostatic Chuck 121 Foundation 123 Adsorption part 125 Electrode membrane 129 Boundary layer 130 Upper electrode 139 Gas Supply Unit 151 First Control Section 200 3D printers 202 Stages 203 Raw material storage area 204 Laser Scanner 205 Laura 206 Light source 207 Roller drive unit 208 Laser driver 209 Laser beam scanning space 210 Chamber 250 Second Control Section HN heater

Claims

1. a base formed from a conductive material; an electrostatic chuck made of a ceramic material and disposed on an upper surface of the base; a boundary layer provided between the base and the electrostatic chuck, the boundary layer includes a mixture of the conductive material and the ceramic material; a compounding ratio of the conductive material to the ceramic material in the mixture gradually decreases from the base toward the electrostatic chuck in the boundary layer; The boundary layer is formed by melting and solidifying. Mounting stand.

2. a compounding ratio of the conductive material to the ceramic material in the mixture linearly decreases from the base toward the electrostatic chuck; The stage according to claim 1 .

3. a compounding ratio of the conductive material to the ceramic material in the mixture decreases stepwise from the base toward the electrostatic chuck; The stage according to claim 1 .

4. a compounding ratio of the conductive material to the ceramic material in the mixture decreases from 100% to 0% toward the electrostatic chuck; The stage according to any one of claims 1 to 3.

5. the conductive material is an aluminum alloy, aluminum nitride, silicon carbide, or titanium; The ceramic material is aluminum oxide or silicon carbide. The stage according to any one of claims 1 to 4.

6. The boundary layer is formed by melting and solidifying with an optical laser or an electron beam. The stage according to any one of claims 1 to 5.

7. a first component formed from a first material; a second component formed from a second material; a boundary layer provided between the first component and the second component, the boundary layer comprises a mixture of the first material and the second material; a blending ratio of the first material to the second material in the mixture gradually decreases from the first component to the second component at the boundary layer; The boundary layer is formed by melting and solidifying. Parts for plasma processing equipment.

8. a blending ratio of the first material to the second material in the mixture linearly decreases from the first part to the second part; The part for a plasma processing apparatus according to claim 7.

9. a mixing ratio of the first material to the second material in the mixture decreases in a stepwise manner from the first part to the second part; The part for a plasma processing apparatus according to claim 7.

10. the blending ratio of the first material to the second material in the mixture decreases from 100% to 0% toward the second part; The part for a plasma processing apparatus according to any one of claims 7 to 9.

11. the first material is an aluminum alloy, aluminum nitride, silicon carbide, or titanium; the second material is aluminum oxide or silicon carbide; The part for a plasma processing apparatus according to any one of claims 7 to 10.

12. The boundary layer is formed by melting and solidifying with an optical laser or an electron beam. The part for a plasma processing apparatus according to any one of claims 7 to 11.

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