Face plate with curved surface

Abstract

The faceplate of the substrate processing chamber includes a first surface and a second surface. The second surface is shaped such that the second surface has a peak and the distance between the first surface and the second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to the processing space of the processing chamber. Furthermore, the faceplate can be part of a lid assembly of the processing chamber. The lid assembly can include a shield plate facing the first surface of the faceplate. The distance between the shield plate and the first surface is constant.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate generally to processing chamber faceplates, and particularly to faceplates having curved surfaces. [Background technology]

[0002]

[0002] Many semiconductor devices are typically fabricated by forming multiple layers of different materials on the surface of a substrate. Semiconductor devices often include a stack of multiple stages or steps of layers of different materials. For example, in 3D NAND memory, multiple stages of oxide and nitride layers are vertically stacked to form a memory device. During processing, each deposited layer experiences local stress non-uniformity, quantified by in-plane distortion (IPD). Local stress non-uniformity can be caused by non-uniformities in the plasma during the deposition process. For example, the plasma density may not be uniform across the entire surface of the substrate. Furthermore, in various examples, radio frequency (RF) signals with increased frequencies (e.g., 27 MHz or higher) have been used to increase deposition rates. However, the use of RF signals with increased frequencies increases plasma non-uniformity. Therefore, the local stress non-uniformity of the layers also increases, resulting in an increased manufacturing failure rate. Furthermore, as the number of layers increases, the cumulative local stress non-uniformity of each layer increases. Thus, the manufacturing failure rate increases for semiconductor devices with many layers.

[0003]

[0003] Thus, there is a need for an improved processing chamber for reducing local stress non-uniformities in layers deposited on a substrate. Summary of the Invention

[0004] In one example, a faceplate for a processing chamber includes a circular mounting ring configured to mount the faceplate within the processing chamber. The faceplate further includes a plurality of apertures, a first surface, and a second surface. The second surface is opposite the first surface and configured to be exposed to the processing volume of the processing chamber. Furthermore, the second surface includes a first peak. Furthermore, the distance between the first surface and the second surface varies. Furthermore, the faceplate is constructed of a conductive material.

[0005] In one example, a lid assembly for a processing chamber includes a gas box, a gas conduit, a shield plate, and a face plate. The gas conduit passes through the gas box. The shield plate is coupled to the gas box. The face plate includes a circular mounting ring configured to mount the face plate within the processing chamber. The face plate further includes a plurality of apertures, a first surface, and a second surface. The second surface is opposite the first surface and configured to be exposed to a processing volume of the processing chamber. Furthermore, the second surface includes a first peak. Furthermore, the distance between the first surface and the second surface varies. Furthermore, the face plate is constructed of a conductive material.

[0006] In one example, a processing chamber includes a substrate support assembly, a chamber wall, and a lid assembly. The substrate support assembly is disposed within a processing space of the processing chamber. The lid assembly is coupled to the chamber wall and includes a shield plate and a face plate. The face plate is coupled to the shield plate. The face plate includes a circular mounting ring configured to mount the face plate within the processing chamber. The face plate further includes a plurality of apertures, a first surface, and a second surface. The second surface is opposite the first surface and configured to be exposed to the processing space of the processing chamber. Furthermore, the second surface includes a first peak. Furthermore, the distance between the first surface and the second surface varies. Furthermore, the face plate is constructed of a conductive material.

[0007]

[0007] So that the features of the present disclosure described above may be understood in detail, a more particular description of the present disclosure briefly summarized above will be had by reference to embodiments, some of which are illustrated in the accompanying drawings. However, since the present disclosure is susceptible to other equally effective embodiments, it should be noted that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic diagram of a processing chamber according to one or more embodiments. [Figure 2]

[0009] 1A-1C are schematic cross-sectional views of face plates according to various embodiments. [Figure 3] 1A-1C are schematic cross-sectional views of face plates according to various embodiments. [Figure 4] 1A-1C are schematic cross-sectional views of face plates according to various embodiments. [Figure 5] 1A-1C are schematic cross-sectional views of face plates according to various embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0010] For ease of understanding, where possible, the same reference numerals have been used to designate identical elements that are common to multiple figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation thereof.

[0010]

[0011] Multiple layers of different materials can be deposited on a substrate to fabricate a variety of different semiconductor devices. While each individual layer may have a relatively small local stress non-uniformity, each layer experiences a cumulative local stress non-uniformity, magnifying the impact of each layer. The local stress non-uniformity is quantized as in-plane distortion (IPD) and corresponds to the plasma non-uniformity within the processing space of the processing chamber. Furthermore, deposition of these layers is a time-consuming process. However, when higher frequencies (e.g., greater than 27 MHz) are used for higher throughput, the plasma non-uniformity due to the higher frequency adds to the local stress non-uniformity. However, by changing the shape of at least one of the electrodes used to generate the plasma within the processing space, the plasma non-uniformity can be reduced, and the local stress non-uniformity of each layer can be reduced.

[0011]

[0012] 1 illustrates a processing chamber 100 according to one or more embodiments. The processing chamber 100 includes a chamber body 102 having a sidewall 104, a bottom 105, and a lid assembly 110. The sidewall 104 and a faceplate 118 of the lid assembly 110 define a processing space 108. A substrate transfer port 111 may be formed in the sidewall 104 for transferring substrates into and out of the processing space 108. The processing chamber 100 may be one of a chemical vapor deposition (CVD) processing chamber, an atomic layer deposition (ALD) processing chamber, a metalorganic chemical vapor deposition (MOCVD) processing chamber, a plasma enhanced chemical vapor deposition (PECVD) processing chamber, and a plasma enhanced atomic layer deposition (PEALD) processing chamber, among others.

[0012]

[0013] The substrate support assembly 126 is disposed within the processing space 108 of the processing chamber 100 below the lid assembly 110. The substrate support assembly 126 is configured to support the substrate 101 during processing. The substrate 101 may have a circumference. The substrate support assembly 126 may include a plurality of lift pins (not shown) movably disposed therethrough. The lift pins are actuatable to protrude from a surface 130 of the substrate support assembly 126, thereby spacing the substrate 101 from the substrate support assembly 126 to facilitate transfer by a transfer robot (not shown) through the substrate transfer port 111. The substrate support assembly 126 is coupled to a shaft 129 to facilitate vertical movement and / or rotation of the substrate support assembly 126.

[0013]

[0014] The electrode 134 may be part of the substrate support assembly 126. The electrode 134 may be embedded within the substrate support assembly 126 or may be coupled to the surface 130 of the substrate support assembly 126. The electrode 134 may be a plate, a perforated plate, a mesh, a wire screen, or any other dispersive configuration. The electrode 134 may be a tuned electrode and may be coupled to a power source by a conduit 135 located within the shaft 129 of the substrate support assembly 126.

[0014]

[0015] An electrode 132, which may be a bias electrode and / or an electrostatic chucking electrode, may be part of the substrate support assembly 126. The electrode 132 may be coupled to a power source 152. The power source 152 may be DC power, pulsed DC power, RF power, pulsed RF power, or a combination thereof.

[0015]

[0016] The lid assembly 110 includes a lid 106, a gas box 114, a shield plate 116, and a face plate 118. A plenum 124 is formed between the gas box 114 and the shield plate 116. Furthermore, a plenum 125 is formed between the shield plate 116 and the face plate 118. The shield plate 116 includes apertures 117, and the face plate 118 includes apertures 119 through which process gases flow into the processing space 108. The apertures 117 in the shield plate enable fluid distribution between the plenums 124 and 125. The shield plate 116 is configured to distribute the gas mixture from the center to the edges before the gas mixture is introduced into the plenum 125. The plenum 125 enables the gas mixture to travel to the processing space 108 defined between the face plate 118 and the substrate support assembly 126 through the apertures 119 formed through the face plate 118. The gas mixture is then ionized to form a plasma in the process space 108 .

[0016]

[0017] The processing chamber 100 further includes a central conduit 138. The central conduit 138 passes through the gas box 114. For example, the central conduit 138 may be formed through the lid 106 and the gas box 114 and open at the plenum 124. The central conduit 138 is configured to provide one or more process gases from a gas supply system 140 to the plenum 124.

[0017]

[0018] The face plate 118 may be constructed of a conductive material. For example, the face plate 118 may be constructed of aluminum. The face plate 118 includes a mounting ring 141. The mounting ring 141 is circular and is positioned around the circumference of the face plate 118. Furthermore, the mounting ring 141 may be used to mount the face plate 118 within the lid assembly 110. For example, the mounting ring 141 may be coupled to the shield plate 116 or another element of the lid assembly 110.

[0018]

[0019] The faceplate 118 may be coupled to a power source 142. The power source 142 may be an RF generator and may be configured to generate DC power, pulsed DC power, and pulsed RF power. For example, the power source 142 may drive the faceplate 118 with RF power having a frequency ranging from about 13 MHz to about 60 MHz. Alternatively, frequencies below 13 MHz and above 60 MHz may be utilized.

[0019]

[0020] Face plate 118 has surface 120 and surface 121. Surface 120 may be curved (e.g., Gaussian or bell shaped in the embodiment of FIG. 1 ) such that the distance between surface 121 and substrate support assembly 126 varies across the width of face plate 118. Furthermore, the distance between surfaces 120 and 121 may vary across the width of the face plate and from the center to the edge of face plate 118. Furthermore, the distance between surface 120 and shielding plate 116 varies across the width of face plate 118, while the distance between surface 121 and shielding plate 116 is constant across the width of face plate 118.

[0020]

[0021] Surface 121 faces shield plate 116. Surface 121 may be substantially parallel to the adjacent surface of shield plate 116 such that the distance between surface 121 and shield plate 116 is substantially constant across the width of face plate 118. In such an example, surface 121 is planar.

[0021]

[0022] The surface 120 faces and is exposed to the processing space 108. For example, the processing space 108 is formed between the surface 120 of the face plate 118 and a surface 130 of the substrate support assembly 126.

[0022]

[0023] Varying the shape of surface 120 of faceplate 118 adjusts plasma non-uniformity within processing space 108 and adjusts local stress non-uniformity of the layer deposited on substrate 101. For example, shaping surface 121 so that surface 121 is curved reduces plasma non-uniformity within processing space 108. Furthermore, reducing plasma non-uniformity reduces local stress non-uniformity of the layer deposited on substrate 101. Reducing local stress non-uniformity enhances the performance of processing chamber 100 and corresponding semiconductor devices. It is contemplated that the shape of surface 120 can be altered to improve and / or mitigate plasma non-uniformity.

[0023]

[0024] Additionally, by shaping the surface 120 of the faceplate 118 to include one or more curved regions, plasma non-uniformities are corrected for the range of frequencies used in the deposition process. Thus, plasma non-uniformities traditionally encountered when using higher frequencies can be mitigated by the faceplate 118, thereby increasing the speed of the deposition process while maintaining good film performance.

[0024]

[0025] During processing, a plasma is formed in the processing space 108 from the precursor gas mixture provided through the central conduit 138 via the gas supply system 140. The plasma can be formed by capacitive means or excited by coupling RF power to the precursor gas mixture via the power sources 142 and 150. The RF power can be dual-frequency RF power, having high-frequency and low-frequency components. The RF power is typically applied at a power level between about 50 W and about 2500 W, but this can be all high-frequency RF power, for example, at a frequency ranging from about 13 MHz to 60 MHz. Alternatively, the RF power can be a mixture of high-frequency and low-frequency power, for example, at a frequency of about 300 kHz. Ignition of a plasma in the processing space 108 establishes a potential difference between the plasma and the electrode 134 and / or faceplate 118.

[0025]

[0026] A controller 190 is coupled to the processing chamber 100. The controller 190 includes a central processing unit (CPU) 192, a memory 194, and support circuits 196. The controller 190 is utilized to control the operation of the processing chamber 100. For example, the controller 190 may control the operation of the gas supply system 140 and / or the power supplies 142, 150, and 152.

[0026]

[0027] The CPU 192 can be any form of general-purpose computer processor that can be used in an industrial environment. The software routines can be stored in memory 194, such as random access memory, read-only memory, a floppy or hard disk drive, or other form of digital storage. Support circuits 196 are coupled to the CPU 192 and can include cache, clock circuits, input / output subsystems, power supplies, etc. When executed by the CPU 192, the software routines transform the CPU 192 into a special-purpose computer (controller) 190 that controls the processing chamber 100 so that processing is performed in accordance with the present disclosure. The software routines can also be stored and / or executed by a second controller (not shown) located remotely from the chamber.

[0027]

[0028] FIG. 2 is a schematic diagram of a cross section of face plate 118. As described with respect to FIG. 1, face plate 118 includes surfaces 120 and 121, where surface 120 has a curved shape. The curved shape is disposed radially inward from mounting ring 141. As shown in FIG. 2, surface 120 has a Gaussian shape. The Gaussian shape may be described as having a peak 204 with a height (e.g., height 210) at a full width at half maximum (e.g., width 209). Varying height 210 and / or width 209 changes the effect that the shape of face plate 118 has on the uniformity of the plasma generated in processing space 108. For example, height 210 can be increased or decreased to change the effect that the shape of face plate 118 has on the plasma uniformity. Additionally or alternatively, width 209 can be increased or decreased to change the effect that the shape of face plate 118 has on the plasma uniformity.

[0028]

[0029] A Gaussian shape is also referred to as a bell shape. For example, the shape of surface 120 is a curve that is symmetric about a centerline 202 bifurcating faceplate 118. In such an example, surface 120 is symmetric about any plane formed through the axial centerline of faceplate 118 (e.g., 360-degree symmetry). Alternatively, the shape of surface 120 is not axially symmetric about centerline 202.

[0029]

[0030] The curve of surface 120 may correspond to the width of the substrate undergoing processing. For example, the width of the curve or shape of surface 120 may be at least as large as the width of the substrate.

[0030]

[0031] The Gaussian profile of surface 120 reduces non-uniformities in the plasma generated within process space 108 and reduces local stress non-uniformities in the layer deposited on substrate 101. By utilizing a faceplate having a Gaussian profile surface, the local stress non-uniformities can be reduced to have an IPD value.

[0031]

[0032] The shape of surface 120 includes regions 211 and 212. Region 211 is proximate mounting ring 141 and edge 220 of face plate 118 and has a near-zero slope. Region 212 has an increasing slope (e.g., a positive slope) toward the center of face plate 118. Furthermore, region 212 is between region 211 and peak 204.

[0032]

[0033] The peaks 204 have a height 210 relative to a plane 207 defined as the plane of the distal-most edge of the face plate 118. The height 210 may range from about 10 mils to about 20 mils. The height 210 of the peaks 204 may correspond to non-uniformities in the plasma generated within the processing space 108. For example, the height 210 may be increased to compensate for bulk plasma non-uniformities.

[0033]

[0034] 3 is a schematic diagram of a cross section of faceplate 318. Faceplate 318 may be configured similarly to faceplate 118, except that surface 320 has a different shape than surface 120 of faceplate 118. For example, surface 320 has a parabolic shape compared to the Gaussian shape of surface 120 of faceplate 118. Furthermore, faceplate 318 may be used in processing chamber 100 of FIG. 1 in place of faceplate 118. Furthermore, faceplate 318 includes apertures 319 that may be configured similarly to apertures 119 of faceplate 118.

[0034]

[0035] Centerline 302 bifurcates faceplate 318 into two equal portions. The parabolic shape of surface 320 may be axially symmetric about centerline 302. For example, the parabolic shape of surface 320 is 3D symmetric about centerline 302. Alternatively, the shape of surface 320 is not axially symmetric about centerline 302. Furthermore, surface 320 may have a peak 304 having a height 310. Height 310 is referenced to a plane 307 of surface 320 that is furthest from surface 320. Height 310 may range from about 10 mils to about 20 mils. The parabolic shape of surface 320 may extend across the entire surface 320 radially inward of mounting ring 141. For example, width 332 of peak 304 is equal to width 334 of faceplate 118 radially inward of, but not including, mounting ring 141. Alternatively, width 332 may be less than width 334, and surface 320 may include one or more regions adjacent mounting ring 141 that have a near-zero slope. The slope of region 333 and / or height 310 may be varied to vary the effect of face plate 118 on the uniformity of the plasma generated within processing space 108. For example, the slope of region 333 may be increased or decreased to change how face plate 118 affects plasma uniformity. Additionally or alternatively, height 310 may be varied to change how face plate 118 affects plasma uniformity.

[0035]

[0036] The parabolic shape of surface 120 has a region 333 where the slope transitions from an increasing slope (e.g., a positive slope) to a zero slope proximate peak 304. Region 333 converges at peak 304.

[0036]

[0037] FIG. 4 is a schematic diagram of a cross section of face plate 418. Face plate 418 may be configured similarly to face plate 118, but surface 420 has a different shape than surface 120 of face plate 118. For example, surface 420 has a twisted shape. A twisted shape may be defined as including a combination of different slopes and different curves. For example, surface 420 includes a first curved region 440, a second curved region 442 adjacent to first curved region 440, and a linear region 441 radially outward of second curved region 442. First curved region 440 includes peak 404. Further, second curved region 442 has an increasing slope toward peak 404. Region 441 has an increasing slope toward curved region 442. Region 441 is in contact with region 442. Further, region 441 may have a substantially constant slope. The slope of regions 440, 441, and 442 as well as height 410 can be varied to vary the effect that face plate 118 has on the uniformity of the plasma generated within process space 108. For example, the slope of regions 440, 441, and 442 can be increased or decreased to change how face plate 118 affects the plasma uniformity. Additionally or alternatively, height 410 can be varied to change how face plate 118 affects the plasma uniformity.

[0037]

[0038] 1 in place of faceplate 118. Additionally, faceplate 418 includes apertures 419 that may be configured similarly to apertures 119 in faceplate 118.

[0038]

[0039] Centerline 402 bifurcates faceplate 418 into two equal portions. The shape of surface 420 may be axially symmetric about centerline 402. For example, the twisted shape of surface 320 is 3D symmetric about centerline 302. Alternatively, the shape of surface 420 is not axially symmetric about centerline 402. Furthermore, peak 304 has a height 410. Height 410 is referenced to point 407 of surface 420 that is furthest from surface 421. Height 410 may range from about 10 mils to about 20 mils.

[0039]

[0040] The shape of surface 420 may extend from mounting ring 141 across the entire radially inward surface 420. Width 432 of linear region 441 and regions 440, 442 may be equal to width 434 of face plate 418 without mounting ring 141. Alternatively, width 432 may be less than width 434, and surface 420 may include one or more regions with a near-zero slope.

[0040]

[0041] 5 is a schematic diagram of a cross section of face plate 518. Face plate 518 may be configured similarly to face plate 118, except that face plate 518 has a surface 520 with multiple peaks (e.g., peaks 550, 551, 552). Surface 520 is curved and may be said to have an angular shape.

[0041]

[0042] Although FIG. 5 shows three peaks, face plate 518 may have two or more peaks. For example, face plate 518 may have more than the three peaks shown. Furthermore, each of peaks 550, 551, 552 may have a general shape. For example, each of peaks 550, 551, 552 may have one of a Gaussian shape, a parabolic shape, and a twisted shape. Furthermore, additional curved shapes may be utilized. Alternatively, a first one or more of peaks 550, 551, 552 may have a different shape than a second one or more of peaks 550, 551, 552. Furthermore, one or more of peaks 550, 551, 552 may have a greater height than another one or more of peaks 550, 551, 552. For example, height 530 may be greater than height 531 and height 532. Furthermore, height 531 may be equal to height 532. Heights 530 , 531 , and 532 are referenced to the plane 507 of surface 520 that is furthest from surface 521 .

[0042]

[0043] The location and number of peaks 550, 551, 552 may correspond to the non-uniformity of the plasma generated in the processing space 108. For example, the peaks may be positioned such that they correspond to the non-uniformity of the plasma generated in the processing space 108. Furthermore, the height of the peaks 550, 551, 552 may correspond to the level of the plasma non-uniformity. For example, if the level of plasma non-uniformity is high, a peak having a higher height may be utilized.

[0043]

[0044] Centerline 502 bifurcates faceplate 518 into two equal portions. Surface 520 may be shaped such that surface 520 is axially symmetric about centerline 502 (e.g., 3D symmetric about centerline 502). Alternatively, surface 520 may be shaped such that surface 520 is not axially symmetric about centerline 502.

[0044]

[0045] The IPD in a layer deposited on a substrate can be reduced by reducing plasma non-uniformity. For example, by shaping the surface of a faceplate facing the processing volume of a processing chamber to include one or more curved regions, plasma non-uniformity is reduced. Furthermore, by reducing plasma non-uniformity, the IPD of each layer deposited on the substrate is reduced, reducing the manufacturing defect rate of the corresponding semiconductor device. Furthermore, the use of a shaped faceplate allows the use of RF power having a frequency greater than about 13 MHz during the deposition process.

[0045]

[0046] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the following claims.

Claims

1. 1. A face plate for a lid assembly of a processing chamber, comprising: a circular mounting ring extending around the circumference of the faceplate and configured to mount the faceplate within the processing chamber; a plurality of apertures configured to transfer process gases to a process volume of the process chamber; a first surface; and a second surface opposite the first surface, the second surface configured to be exposed to a processing volume of the processing chamber, the second surface having a concave structure including a first concave peak at a center of the second surface, whereby a thickness of the face plate defined between the first surface and the second surface varies across a width of the face plate, the face plate being constructed of a conductive material, and the concave structure being symmetrical about a vertical centerline of the face plate and extending to the mounting ring; Equipped with the processing chamber is a plasma deposition chamber; Face plate.

2. 10. The face plate of claim 1, wherein the depth of said first concave peak ranges from 10 mils (0.254 mm) to 20 mils (0.508 mm).

3. 1. A lid assembly for a processing chamber, comprising: Gas box and; a gas conduit passing through the gas box; a shielding plate coupled to the gas box; a face plate coupled to the shielding plate, a circular mounting ring extending around the circumference of the face plate and configured to mount the face plate within the lid assembly; a plurality of apertures configured to transfer process gases to a process volume of the process chamber; a first surface parallel to the shielding plate; a second surface opposite the first surface, the second surface configured to be exposed to a processing volume of the processing chamber, the second surface having a concave structure including a first concave peak at a center of the second surface, whereby a thickness of the face plate defined between the first surface and the second surface varies across a width of the face plate, the face plate being constructed of a conductive material, and the concave structure being symmetrical about a vertical centerline of the face plate and extending to the mounting ring; a face plate comprising: Equipped with the processing chamber is a plasma deposition chamber; Lid assembly.

4. 4. The lid assembly of claim 3, wherein the depth of the first concave peak ranges from 10 mils (0.254 mm) to 20 mils (0.508 mm).

5. The lid assembly of claim 3 , wherein the distance between the second surface and the shield plate varies.

6. 1. A processing chamber comprising: a substrate support assembly disposed within a processing volume of the processing chamber; a chamber wall; a lid assembly coupled to the chamber wall, a shielding plate; a face plate coupled to the shielding plate, a circular mounting ring extending around the circumference of the face plate and configured to mount the face plate within the lid assembly; a plurality of apertures configured to transfer process gases to a process volume of the process chamber; a first surface parallel to the shielding plate; a second surface opposite the first surface, the second surface configured to be exposed to a processing volume of the processing chamber, the second surface having a concave structure including a first concave peak at a center of the second surface, whereby a thickness of the face plate defined between the first surface and the second surface varies across a width of the face plate, the face plate being constructed of a conductive material, and the concave structure being symmetrical about a vertical centerline of the face plate and extending to the mounting ring; a face plate comprising: a lid assembly comprising: Including, the processing chamber is a plasma deposition chamber; Processing chamber.

7. 7. The processing chamber of claim 6, wherein the depth of the first concave peak ranges from 10 mils (0.254 mm) to 20 mils (0.508 mm).

8. A panel as described in claim 1, wherein the concave structure of the second surface has at least one additional concave peak spaced apart from the center of the second surface.

9. A lid assembly as described in claim 3, wherein the concave structure of the second surface has at least one additional concave peak spaced apart from the center of the second surface.

10. A processing chamber as described in claim 6, wherein the concave structure of the second surface has at least one additional concave peak spaced apart from the center of the second surface.

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