Plasma processing apparatus and substrate support

Abstract

This plasma processing device comprises a substrate supporter (11A). The substrate supporter (11A) includes a base (14), an electrostatic chuck (16A), a chuck electrode (16a), and an electrode structure (16pA). An electrostatic chuck (16A) is disposed on the base (14) and has a center region (16R1) and an annular region (16R2). The chuck electrode (16a) is disposed in the center region (16R1). The electrode structure (16pA) is disposed below the chuck electrode (16a) in the center region (16R1) and is set to be in an electrically floating state. The electrode structure (16pA) includes a first electrode layer (161), a second electrode layer (162) disposed below the first electrode layer (161), and one or more connection bodies (163) that connect the first electrode layer (161) and the second electrode layer (162) with each other. At least one bias power source (32) is electrically connected to the substrate supporter (11A).

Description

[Technical Field]

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to methods of manufacturing a substrate support, a plasma processing apparatus, and an electrostatic chuck. [Background technology]

[0002] A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support includes a base and an electrostatic chuck and is provided in the chamber. The electrostatic chuck is provided on the base. The electrostatic chuck includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The thickness of the first region is greater than the thickness of the second region. Such a plasma processing apparatus is disclosed in Patent Document 1 listed below. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2021-044413 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for reducing the difference in impedance between the base and the substrate and the impedance between the base and the edge ring in a substrate support. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a plasma processing chamber, a substrate support, and at least one bias power supply. The substrate support is disposed within the plasma processing chamber. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is disposed on the base and has a central region having a substrate support surface and an annular region surrounding the central region. The thickness of the annular region is smaller than the thickness of the central region. The chuck electrode is disposed within the central region. The electrode structure is disposed below the chuck electrode in the central region and is set in an electrically floating state. The electrode structure includes a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer. The first electrode layer and the second electrode layer extend across the substrate support surface in a plan view. The at least one bias power supply is electrically connected to the substrate support. [Effects of the Invention]

[0006] According to one exemplary embodiment, it is possible to reduce the difference in impedance between the base and the substrate placed on the substrate support surface in a substrate support and the impedance between the base and the edge ring placed on the annular region. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram illustrating a schematic diagram of a plasma processing apparatus according to an exemplary embodiment; [Figure 2] 1 is a diagram illustrating a schematic diagram of a plasma processing apparatus according to an exemplary embodiment; [Figure 3] 1 illustrates a substrate support according to an exemplary embodiment. [Figure 4] 10 illustrates a substrate support according to another exemplary embodiment. [Figure 5] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 6] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 7]10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 8] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 9] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 10] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 11] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 12] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 13] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 14] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 15] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 16] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 17] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 18] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 19] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 20] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 21] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 22] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 23] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 24] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 25] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 26] 10 illustrates a substrate support according to yet another exemplary embodiment. [Figure 27] FIG. 1 is a perspective view of an example electrode structure. [Figure 28] 10 illustrates a substrate support according to yet another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] 1 and 2 are diagrams schematically illustrating a plasma processing apparatus according to an exemplary embodiment.

[0010] In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a controller 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0011] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0012] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0013] An exemplary configuration of a capacitively coupled plasma processing apparatus is described below as an example of the plasma processing apparatus 1. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, multiple power sources, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 11m and an edge ring 11e. The main body 11m is configured to support the substrate W and the edge ring 11e. Although not shown, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 16, the edge ring 11e, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the top surface of the substrate support 11.

[0015] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes a conductive member. The conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0017] The multiple power supplies of the plasma processing apparatus 1 include a DC power supply used to hold the substrate W by electrostatic attraction, a high frequency power supply used to generate plasma, and at least one bias power supply used to attract ions from the plasma. The multiple power supplies will be described in detail later.

[0018] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0019] 1 and 2, reference will now be made to FIG. 3. FIG. 3 is a diagram illustrating a substrate support according to an exemplary embodiment. The substrate support 11A illustrated in FIG. 3 can be used as the substrate support 11 of the plasma processing apparatus 1.

[0020] The substrate support 11A includes a base 14 and an electrostatic chuck 16A. The base 14 has a substantially disk shape. The base 14 is made of a metal such as aluminum. A high-frequency power supply 31 (RF power supply) is electrically connected to the base 14 via a matching box 31m. A bias power supply 32 is also electrically connected to the base 14.

[0021] The high frequency power supply 31 is configured to generate high frequency power RF to generate plasma from the gas in the chamber 10. The high frequency power RF has a frequency in the range of 13 MHz or more and 150 MHz or less. The matching device 31m has a matching circuit for matching the impedance of the load of the high frequency power supply 31 to the output impedance of the high frequency power supply 31.

[0022] The bias power supply 32 is configured to generate bias energy BE to attract ions from the plasma to the substrate W. The bias energy BE is electrical energy and has a bias frequency in the range of 100 kHz to 13.56 MHz.

[0023] The bias energy BE may be high-frequency power having a bias frequency, i.e., high-frequency bias power. In this case, the bias power supply 32 is electrically connected to the base 14 via a matching box 32m. The matching box 32m has a matching circuit for matching the impedance of the load of the bias power supply 32 to the output impedance of the bias power supply 32.

[0024] Alternatively, the bias energy BE may be a periodically generated voltage pulse. The time interval between the voltage pulses, i.e., the periodic time length, is the reciprocal of the bias frequency. The voltage pulse may have either a negative polarity or a positive polarity. The voltage pulse may be a negative DC voltage pulse. The voltage pulse may have any waveform, such as a square wave, a triangular wave, or an impulse wave.

[0025] The electrostatic chuck 16A is provided on a base 14. The electrostatic chuck 16A is fixed to the base 14 via a bonding member 15. The bonding member 15 may be an adhesive or a brazing material. The adhesive may be an adhesive containing a metal.

[0026] The electrostatic chuck 16A has a main body 16m and various electrodes. The main body 16m is made of a dielectric material such as aluminum oxide or aluminum nitride and has a substantially disk shape. The various electrodes of the electrostatic chuck 16A are provided within the main body 16m.

[0027] The electrostatic chuck 16A includes a first region 16R1 (central region) and a second region 16R2 (annular region). The first region 16R1 is a central region of the electrostatic chuck 16A and includes a central portion of the main body 16m. The first region 16R1 is a substantially circular region in a plan view. The first region 16R1 has a substrate support surface. The substrate support surface is the upper surface of the first region 16R1, and the substrate W is placed on the substrate support surface. The second region 16R2 extends in the circumferential direction around the central axis of the electrostatic chuck 16A to surround the first region 16R1. The second region 16R2 includes a peripheral portion of the main body 16m. The second region 16R2 is a ring-shaped region in a plan view. The second region 16R2 has an edge ring support surface. The edge ring support surface is the upper surface of the second region 16R2, and the edge ring 11e is placed on the edge ring support surface. The thickness T1 of the first region 16R1 is greater than the thickness T2 of the second region 16R2. That is, the thickness T2 of the second region 16R2 is smaller than the thickness T1 of the first region 16R1. The vertical position of the upper surface of the first region 16R1 is higher than the vertical position of the second region 16R2.

[0028] The first region 16R1 is configured to hold a substrate W placed thereon. The first region 16R1 includes a chuck electrode 16a. The chuck electrode 16a is a film made of a conductive material and is provided within the first region 16R1 in a body 16m. The chuck electrode 16a may have a substantially circular planar shape. The central axis of the chuck electrode 16a may substantially coincide with the central axis of the electrostatic chuck 16A.

[0029] A DC power supply 50p is connected to the chuck electrode 16a via a switch 50s. When a DC voltage from the DC power supply 50p is applied to the chuck electrode 16a, an electrostatic attractive force is generated between the first region 16R1 and the substrate W. The substrate W is attracted to the first region 16R1 by the generated electrostatic attractive force and held by the first region 16R1.

[0030] The second region 16R2 is configured to support an edge ring 11e placed thereon. The substrate W is disposed on the first region 16R1 within the region surrounded by the edge ring 11e. In one embodiment, the second region 16R2 includes chuck electrodes 16b and 16c. Each of the chuck electrodes 16b and 16c is a film formed of a conductive material and is disposed within the body 16m within the second region 16R2. Each of the chuck electrodes 16b and 16c may extend circumferentially around the central axis of the electrostatic chuck 16A. The chuck electrode 16c may extend outside the chuck electrode 16b.

[0031] A DC power supply 51p is connected to the chuck electrode 16b via a switch 51s. A DC power supply 52p is connected to the chuck electrode 16c via a switch 52s. When a DC voltage from the DC power supply 51p is applied to the chuck electrode 16b and a DC voltage from the DC power supply 52p is applied to the chuck electrode 16c, an electrostatic attractive force is generated between the second region 16R2 and the edge ring 11e. The edge ring 11e is attracted to the second region 16R2 by the generated electrostatic attractive force and is held by the second region 16R2.

[0032] In various exemplary embodiments, the electrostatic chuck 16 of the plasma processing apparatus 1 includes a portion or element (hereinafter referred to as an "adjustment portion") configured to reduce the difference between the capacitance per unit area of ​​the first region 16R1 and the capacitance per unit area of ​​the second region 16R2. The capacitance per unit area of ​​the first region 16R1 is the capacitance per unit area (or the average value of the capacitance) of the first region 16R1 between the upper surface (substrate support surface) of the first region 16R1 and the base 14. The capacitance per unit area of ​​the second region 16R2 is the capacitance per unit area (or the average value of the capacitance) of the second region 16R2 between the upper surface (edge ​​ring support surface) of the second region 16R2 and the base 14. The adjustment portion is provided in at least one of the first region 16R1 and the second region 16R2.

[0033] 3 has a portion 16pA (electrode structure) as an adjustment portion. The portion 16pA is provided in the main body 16m within the first region 16R1. The portion 16pA is provided between the chuck electrode 16a and the lower surface of the main body 16m. That is, the portion 16pA is provided below the chuck electrode 16a.

[0034] The portion 16pA includes a first electrode 161 (first electrode layer), a second electrode 162 (second electrode layer), and one or more interconnects 163 (one or more interconnects). Each of the first electrode 161 and the second electrode 162 is a film formed from a conductive material. Each of the first electrode 161 and the second electrode 162 may have a substantially circular planar shape. The center of each of the first electrode 161 and the second electrode 162 may be located on the central axis of the electrostatic chuck 16A. Furthermore, the first electrode 161 and the second electrode 162 extend across the substrate support surface in a plan view. That is, the first electrode 161 and the second electrode 162 extend across the first region 16R1 in the horizontal direction. The first electrode 161 and the second electrode 162 may extend across substantially the entire area (for example, 90% or more) of the first region 16R1 in the horizontal direction.

[0035] The second electrode 162 extends below the first electrode 161. The one or more interconnects 163 are formed from a conductive material. Each of the one or more interconnects 163 may be columnar. The one or more interconnects 163 electrically connect the first electrode 161 and the second electrode 162 to each other. The electrostatic chuck 16A may have a plurality of interconnects 163.

[0036] 27 is a perspective view of an example electrode structure. As shown in FIG. 27, the arrangement of the multiple interconnectors 163 may be axially symmetric. Furthermore, the multiple interconnectors 163 may be arranged at equal distances from the center of the first electrode 161 or the second electrode 162, or at different distances. The multiple interconnectors 163 may be arranged along a radial direction with respect to the center of the first electrode 161 or the second electrode 162.

[0037] Portion 16pA is placed in an electrically floating state. In this specification, the electrically floating state of the electrode structure according to various exemplary embodiments, such as portion 16pA, refers to a state in which the electrode structure is electrically floating or isolated from both the power supply and the ground (earth potential), in which there is no or almost no exchange of charge or current with the surrounding conductors, and in which current can flow in the object solely by electromagnetic induction.

[0038] With an electrostatic chuck having an adjustment portion such as portion 16pA, even if the thickness of first region 16R1 is greater than the thickness of second region 16R2, the difference between the capacitance per unit area of ​​first region 16R1 and the capacitance per unit area of ​​second region 16R2 is small. Therefore, the difference in impedance between base 14 and substrate W and the impedance between base 14 and edge ring 11e is small. Therefore, it is possible to reduce the difference between the power coupled to plasma through edge ring 11e and the power coupled to plasma through substrate W.

[0039] Furthermore, when the bonding member 15 contains a metal, heat transfer between the base 14 and the electrostatic chuck 16A is improved, so that even if the levels of the high frequency power RF and / or the bias energy BE are high, it is possible to suppress temperature increases in the electrostatic chuck 16A, the substrate W, and the edge ring 11e.

[0040] Furthermore, since the portion 16pA exists within the first region 16R1, the capacitance of the first region 16R1 is large, and therefore it is possible to apply a large potential difference to the sheath above the substrate W. This improves the power efficiency of the radio frequency power RF and the bias energy BE.

[0041] Furthermore, since the impedance in the first region 16R1 is small, the level of the high frequency power RF and / or the bias energy BE can be reduced, thereby suppressing discharge in the flow passages and gaps in the substrate support 11A through which the heat transfer gas flows.

[0042] Furthermore, the electrostatic chuck 16A does not have an electrical contact with the portion 16pA. Therefore, the electrostatic chuck 16A does not generate local heat due to an electrical contact. In another embodiment, the electrostatic chuck 16A may have a conductor 17 that electrically connects the portion 16pA and the base 14, as shown in FIG. 3 .

[0043] Reference will now be made to Fig. 4, which is a diagram illustrating a substrate support according to another exemplary embodiment. The substrate support 11B illustrated in Fig. 4 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11B and the substrate support 11A will be described below.

[0044] The electrostatic chuck 16B of the substrate support 11B differs from the electrostatic chuck 16A of the substrate support 11A in that it includes bias electrodes 16e and 16f. Each of the bias electrodes 16e and 16f is a film formed of a conductive material. The bias electrode 16e is provided in the body 16m within the first region 16R1. The bias electrode 16e extends across the substrate support surface in a plan view. That is, the bias electrode 16e extends across the first region 16R1 in the horizontal direction. The bias electrode 16e is provided between the upper surface of the first region 16R1 and the portion 16pA. The bias electrode 16e may be provided between the chuck electrode 16a and the portion 16pA. The bias electrode 16e may have a substantially circular planar shape, and its center may be located on the central axis of the electrostatic chuck 16B.

[0045] The bias electrode 16f is provided in the body 16m within the second region 16R2. The bias electrode 16f may be provided between each of the chuck electrodes 16b and 16c and the lower surface of the second region 16R2. The bias electrode 16f may have a substantially annular planar shape, and its center may be located on the central axis of the electrostatic chuck 16B.

[0046] A bias power supply 32 (first bias power supply) is electrically connected to the bias electrode 16e. A bias power supply 33 (second bias power supply) is electrically connected to the bias electrode 16f. The bias power supply 33 is a power supply that generates bias energy BE2 to be applied to the bias electrode 16f. The bias energy BE2 may be high-frequency bias power, like the bias energy BE, or may be a periodically generated voltage pulse. When the bias energy BE2 is high-frequency bias power, the bias power supply 33 is electrically connected to the bias electrode 16f via a matching box 33m.

[0047] The substrate support 11B allows bias energy BE having a relatively low frequency to be applied to the bias electrode 16e provided near the substrate W. Also, bias energy BE2 having a relatively low frequency to be applied to the bias electrode 16f provided near the edge ring 11e.

[0048] Reference is now made to FIG. 5, which illustrates a substrate support according to yet another exemplary embodiment. In the embodiment illustrated in FIG. 5, the bias power supply 32 is electrically connected to both the bias electrodes 16e and 16f, and bias energy BE is distributed to the bias electrodes 16e and 16f. The distribution ratio of the bias energy BE between the bias electrodes 16e and 16f is adjusted by an impedance adjuster 55. The impedance adjuster 55 includes, for example, a variable capacitor. The impedance adjuster 55 is connected between the bias power supply 32 and the bias electrode 16f. Note that another impedance adjuster may be connected between the bias power supply 32 and the bias electrode 16e. Alternatively, the impedance adjuster 55 may be connected between the bias power supply 32 and the bias electrode 16e.

[0049] 5, the radio frequency power supply 31 is electrically connected to the bias electrode 16f in addition to the base 14, and the radio frequency power RF is distributed between the base 14 and the bias electrode 16f. The distribution ratio of the radio frequency power RF between the base 14 and the bias electrode 16f is adjusted by an impedance adjuster 54. The impedance adjuster 54 includes, for example, a variable capacitance capacitor. The impedance adjuster 54 is connected between the radio frequency power supply 31 and the bias electrode 16f. Note that another impedance adjuster may be connected between the radio frequency power supply 31 and the base 14. Alternatively, the impedance adjuster 54 may be connected between the radio frequency power supply 31 and the base 14.

[0050] As shown in FIG. 5, the electrical path between the radio frequency power supply 31 and the bias electrode 16f is connected to a node on the electrical path connecting the bias power supply 32 to the bias electrode 16f. In the embodiment shown in FIG. 5, a low-pass filter 56 is connected between the node and the bias power supply 32 to block or attenuate the radio frequency power RF flowing toward the bias power supply 32. The low-pass filter 56 has a characteristic of passing bias energy BE. The low-pass filter 56 may also be connected between the node and the impedance adjuster 55. Furthermore, a low-pass filter such as the low-pass filter 56 may be connected between the bias electrode 16e and a branch node at which two electrical paths connecting the bias power supply 32 to the bias electrodes 16e and 16f, respectively, branch off from each other. Alternatively, a low-pass filter such as the low-pass filter 56 may be connected between the branch node and the bias power supply 32.

[0051] Reference is now made to Figure 6, which illustrates a substrate support according to yet another exemplary embodiment. In the embodiment illustrated in Figure 6, bias power supply 32 is connected to bias electrode 16e, and bias power supply 33 is connected to bias electrode 16f.

[0052] 6, the radio frequency power supply 31 is electrically connected to the bias electrode 16f in addition to the base 14, and the radio frequency power RF is distributed between the base 14 and the bias electrode 16f. The distribution ratio of the radio frequency power RF between the base 14 and the bias electrode 16f is adjusted by an impedance adjuster 57. The impedance adjuster 57 includes, for example, a variable capacitance capacitor. The impedance adjuster 57 is connected between the radio frequency power supply 31 and the bias electrode 16f. Note that another impedance adjuster may be connected between the radio frequency power supply 31 and the base 14. Alternatively, the impedance adjuster 57 may be connected between the radio frequency power supply 31 and the base 14.

[0053] As shown in FIG. 6 , the electrical path between the radio frequency power supply 31 and the bias electrode 16f is connected to a node on the electrical path connecting the bias power supply 33 to the bias electrode 16f. In the embodiment shown in FIG. 6 , a high-pass filter 58 is connected between the node and the radio frequency power supply 31 to block or attenuate the bias energy BE2 flowing toward the radio frequency power supply 31. The high-pass filter 58 has a characteristic of passing radio frequency power RF. The high-pass filter 58 may be connected between the node and the impedance adjuster 57. Furthermore, a high-pass filter such as the high-pass filter 58 may be connected between the base 14 and a branch node at which two electrical paths connecting the radio frequency power supply 31 to the base 14 and the bias electrode 16f, respectively, branch off from each other. Alternatively, a high-pass filter such as the high-pass filter 58 may be connected between the branch node and the radio frequency power supply 31.

[0054] Reference will now be made to Fig. 7, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11C illustrated in Fig. 7 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11C and the substrate support 11B will be described below.

[0055] The electrostatic chuck 16C of the substrate support 11C differs from the electrostatic chuck 16B of the substrate support 11B in that it further includes auxiliary electrodes 16g and 16h. Each of the auxiliary electrodes 16g and 16h is a film formed of a conductive material. The auxiliary electrode 16g is provided in the body 16m within the first region 16R1. The auxiliary electrode 16g is provided between the upper surface of the first region 16R1 and the portion 16pA. The auxiliary electrode 16g may be provided between the bias electrode 16e and the portion 16pA. The auxiliary electrode 16g may have a substantially annular planar shape, and its center may be located on the central axis of the electrostatic chuck 16C.

[0056] The auxiliary electrode 16h is provided in the main body 16m within the second region 16R2. The auxiliary electrode 16h may be provided between the bias electrode 16f and the lower surface of the second region 16R2. The auxiliary electrode 16h may have a substantially annular planar shape, and its center may be located on the central axis of the electrostatic chuck 16C.

[0057] As shown in FIG. 7 , the radio frequency power supply 31 is electrically connected to the base 14 as well as the auxiliary electrodes 16g and 16h, and the radio frequency power RF is distributed to the base 14, the auxiliary electrodes 16g, and the auxiliary electrodes 16h. The distribution ratio of the radio frequency power RF to the base 14, the auxiliary electrodes 16g, and the auxiliary electrodes 16h is adjusted by impedance adjusters 59 and 60. Each of the impedance adjusters 59 and 60 includes, for example, a variable capacitance capacitor. The impedance adjuster 59 is connected between the radio frequency power supply 31 (or the matching box 31m) and the auxiliary electrode 16g. The impedance adjuster 60 is connected between the radio frequency power supply 31 (or the matching box 31m) and the auxiliary electrode 16h. Note that one of the impedance adjusters 59 and 60 may be connected between the radio frequency power supply 31 (or the matching box 31m) and the base 14. Alternatively, another impedance adjuster may be connected between the radio frequency power supply 31 and the base 14.

[0058] Reference will now be made to Fig. 8, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. A substrate support 11D illustrated in Fig. 8 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11D and the substrate support 11C will be described below.

[0059] The electrostatic chuck 16D of the substrate support 11D differs from the electrostatic chuck 16C of the substrate support 11C in that it does not have an auxiliary electrode 16g. As shown in FIG. 8, the high-frequency power supply 31 is electrically connected to the auxiliary electrode 16h in addition to the base 14, and the high-frequency power RF is distributed to the base 14 and the auxiliary electrode 16h. The distribution ratio of the high-frequency power RF between the base 14 and the auxiliary electrode 16h is adjusted by an impedance adjuster 61. The impedance adjuster 61 includes, for example, a variable capacitance capacitor. The impedance adjuster 61 is connected between the high-frequency power supply 31 (or the matching device 31m) and the auxiliary electrode 16h. The impedance adjuster 61 may be connected between the high-frequency power supply 31 (or the matching device 31m) and the base 14. Alternatively, a separate impedance adjuster may be connected between the high-frequency power supply 31 and the base 14.

[0060] Reference will now be made to Fig. 9, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11E illustrated in Fig. 9 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11E and the substrate support 11A will be described below.

[0061] The electrostatic chuck 16E of the substrate support 11E differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pE (electrode structure) as an adjustment portion. The portion 16pE is provided in the main body 16m within the first region 16R1. The portion 16pE may be provided between the chuck electrode 16a and the lower surface of the first region 16R1.

[0062] The portion 16pE includes a first electrode 161E (first electrode layer), a second electrode 162E (second electrode layer), and one or more interconnects 163E (one or more interconnects). Each of the first electrode 161E and the second electrode 162E is a film formed from a conductive material. Each of the first electrode 161E and the second electrode 162E may have a substantially circular planar shape. The centers of the first electrode 161E and the second electrode 162E may be located on the central axis of the electrostatic chuck 16E. Furthermore, the first electrode 161E and the second electrode 162E extend across the substrate support surface in a plan view. That is, the first electrode 161E and the second electrode 162E extend across the first region 16R1 in the horizontal direction. The first electrode 161E and the second electrode 162E may extend across substantially the entire area (for example, 90% or more) of the first region 16R1 in the horizontal direction.

[0063] The second electrode 162E extends below the first electrode 161E. The one or more interconnects 163E are formed from a conductive material. Each of the one or more interconnects 163E may be columnar. Similar to the interconnects 163, the one or more interconnects 163E electrically connect the first electrode 161E and the second electrode 162E to each other. The electrostatic chuck 16E may have a plurality of interconnects 163E.

[0064] The first electrode 161E is formed so that the distance between the first electrode 161E and the upper surface of the first region 16R1 gradually decreases as the distance from the center of the first region 16R1 in the radial direction increases.

[0065] According to the electrostatic chuck 16E, the capacitance of the first region 16R1 increases with increasing radial distance from the center of the first region 16R1, which makes it possible to correct the plasma density distribution that decreases with increasing radial distance from the central axis of the electrostatic chuck 16E.

[0066] Reference will now be made to Fig. 10, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. A substrate support 11F illustrated in Fig. 10 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11F and the substrate support 11E will be described below.

[0067] The electrostatic chuck 16F of the substrate support 11F differs from the electrostatic chuck 16E of the substrate support 11E in that it has a portion 16pF (electrode structure) as an adjustment portion. The portion 16pF is provided in the body 16m within the first region 16R1. The portion 16pF may be provided between the chuck electrode 16a and the lower surface of the first region 16R1.

[0068] The portion 16pF includes a first electrode 161F (first electrode layer), a second electrode 162F (second electrode layer), and one or more interconnects 163F (one or more interconnects). Each of the first electrode 161F and the second electrode 162F is a film formed from a conductive material. Each of the first electrode 161F and the second electrode 162F may have a substantially circular planar shape. The centers of the first electrode 161F and the second electrode 162F may be located on the central axis of the electrostatic chuck 16F. Furthermore, the first electrode 161F and the second electrode 162F extend across the substrate support surface in a plan view. That is, the first electrode 161F and the second electrode 162F extend across the first region 16R1 in the horizontal direction. The first electrode 161F and the second electrode 162F may extend across substantially the entire area (for example, 90% or more) of the first region 16R1 in the horizontal direction.

[0069] The second electrode 162F extends below the first electrode 161F. The one or more interconnects 163F are formed from a conductive material. Each of the one or more interconnects 163F may be columnar. Similar to the interconnects 163, the one or more interconnects 163F electrically connect the first electrode 161F and the second electrode 162F to each other. The electrostatic chuck 16F may have a plurality of interconnects 163F.

[0070] The first electrode 161F is formed so that the distance between the first electrode 161F and the upper surface of the first region 16R1 decreases stepwise as the radial distance from the center of the first region 16R1 increases.

[0071] According to the electrostatic chuck 16F, the capacitance of the first region 16R1 increases stepwise as the radial distance from the center of the first region 16R1 increases, thereby making it possible to correct the plasma density distribution that decreases as the radial distance from the central axis of the electrostatic chuck 16E increases.

[0072] Reference will now be made to Fig. 11, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. A substrate support 11G illustrated in Fig. 11 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11G and the substrate support 11F will be described below.

[0073] The electrostatic chuck 16G of the substrate support 11G differs from the electrostatic chuck 16F of the substrate support 11F in that it further includes a bias electrode 16e. The bias electrode 16e is a film formed of a conductive material. The bias electrode 16e is provided in the body 16m within the first region 16R1. The bias electrode 16e extends across the substrate support surface in a plan view. That is, the bias electrode 16e extends across the first region 16R1 in the horizontal direction. The bias electrode 16e is provided between the upper surface of the first region 16R1 and the portion 16pF. The bias electrode 16e may have a substantially circular planar shape, and its center may be located on the central axis of the electrostatic chuck 16G. A bias power supply 32 is electrically connected to the bias electrode 16e.

[0074] Reference will now be made to Fig. 12, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. A substrate support 11H shown in Fig. 12 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11H and the substrate support 11F will be described below.

[0075] The electrostatic chuck 16H of the substrate support 11H differs from the electrostatic chuck 16F of the substrate support 11F in that the electrostatic chuck 16H has a portion 16pH (electrode structure) as an adjustment portion. The portion 16pH is provided in the main body 16m within the first region 16R1. The portion 16pH may be provided between the chuck electrode 16a and the lower surface of the first region 16R1.

[0076] The portion 16pH includes a first electrode 161H (first electrode layer), a second electrode 162H (second electrode layer), and one or more interconnects 163H (one or more connectors). The first electrode 161H includes a plurality of films formed from a conductive material. The second electrode 162H is a film formed from a conductive material. The centers of the first electrode 161H and the second electrode 162H may be located on the central axis of the electrostatic chuck 16H. The first electrode 161H and the second electrode 162H extend across the substrate support surface in a plan view. That is, the first electrode 161H and the second electrode 162H extend across the first region 16R1 in the horizontal direction. The first electrode 161H and the second electrode 162H may extend across substantially the entire area (e.g., 90% or more) of the first region 16R1 in the horizontal direction.

[0077] The second electrode 162H extends below the first electrode 161H. The one or more interconnects 163H are formed from a conductive material. Each of the one or more interconnects 163H may be columnar. The one or more interconnects 163H electrically connect the first electrode 161H and the second electrode 162H to each other. The electrostatic chuck 16H may have a plurality of interconnects 163H.

[0078] The above-mentioned multiple films constituting the first electrode 161H are formed so that the distance between the first electrode 161H and the top surface of the first region 16R1 decreases stepwise as the radial distance from the center of the first region 16R1 increases. That is, the multiple films provide a stepped top surface of the first electrode 161H.

[0079] According to the electrostatic chuck 16H, the capacitance of the first region 16R1 increases stepwise as the radial distance from the center of the first region 16R1 increases, thereby making it possible to correct the plasma density distribution that decreases as the radial distance from the central axis of the electrostatic chuck 16H increases.

[0080] Reference will now be made to Fig. 13, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11J illustrated in Fig. 13 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11J and the substrate support 11A will be described below.

[0081] The electrostatic chuck 16J of the substrate support 11J differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pJ (electrode structure) as an adjustment portion. The portion 16pJ is provided in the main body 16m within the first region 16R1. The portion 16pJ may be provided between the chuck electrode 16a and the base 14.

[0082] The portion 16pJ includes an electrode 161J and one or more interconnects 163J (one or more connectors). The electrode 161J is a film formed from a conductive material. The electrode 161J may have a substantially circular planar shape. The center of the electrode 161J may be located on the central axis of the electrostatic chuck 16J. The electrode 161J extends across the substrate support surface in a planar view. That is, the electrode 161J extends across the first region 16R1 in the horizontal direction. The electrode 161J may extend across substantially the entire area (e.g., 90% or more) of the first region 16R1 in the horizontal direction.

[0083] The one or more interconnectors 163J are formed of a conductive material. Each of the one or more interconnectors 163J may be columnar. The one or more interconnectors 163J electrically connect the electrode 161J and the upper surface of the base 14 to each other. The electrostatic chuck 16J may have a plurality of interconnectors 163J. From the viewpoint of preventing discharge and / or heat generation, the plurality of interconnectors 163J may be uniformly arranged in a circular, concentric, or grid pattern when the substrate support 11J is viewed from above.

[0084] Reference will now be made to Fig. 14, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11K illustrated in Fig. 14 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11K and the substrate support 11A will be described below.

[0085] The electrostatic chuck 16K of the substrate support 11K differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pK as an adjustment portion. The portion 16pK is provided in the main body 16m within the first region 16R1. The portion 16pK may be provided between the chuck electrode 16a and the base 14.

[0086] The portion 16pK is a conductive plate made of a metal such as aluminum. The portion 16pK may have a substantially disk shape. The central axis of the portion 16pK may substantially coincide with the central axis of the electrostatic chuck 16K. The portion 16pK may have the greatest thickness of all the conductive portions in the first region 16R1. A bonding member similar to the bonding member 15 may be interposed between the portion 16pK and the main body 16m. The portion 16pK may also be integrated with the base 14.

[0087] Reference will now be made to Fig. 15, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11L illustrated in Fig. 15 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11L and the substrate support 11A will be described below.

[0088] The electrostatic chuck 16L of the substrate support 11L differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pL as an adjustment portion. The portion 16pL constitutes a part of the first region 16R1 and is provided in the main body 16m within the first region 16R1. The portion 16pL may be provided between the chuck electrode 16a and the base 14. The portion 16pL may have a substantially disk shape. The central axis of the portion 16pL may substantially coincide with the central axis of the electrostatic chuck 16L. The portion 16pL is formed of a metal-matrix composite material, i.e., a composite material of ceramic and metal.

[0089] Reference will now be made to Fig. 16, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. A substrate support 11M shown in Fig. 16 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11M and the substrate support 11L will be described below.

[0090] The electrostatic chuck 16M of the substrate support 11M differs from the electrostatic chuck 16L of the substrate support 11L in that it has a portion 16pM as an adjustment portion. The portion 16pM constitutes a part of the first region 16R1 and is provided in the main body 16m within the first region 16R1. The portion 16pM may be provided between the chuck electrode 16a and the base 14. The portion 16pM may have a substantially disk shape. The central axis of the portion 16pM may substantially coincide with the central axis of the electrostatic chuck 16M.

[0091] The portion 16pM is made of a material having a higher dielectric constant than the dielectric constant of the dielectric material of the main body 16m constituting the second region 16R2, for example, zirconia, hafnium oxide, barium magnesium niobate, or barium neodymium titanate.

[0092] Reference will now be made to Fig. 17, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. A substrate support 11N illustrated in Fig. 17 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11N and the substrate support 11M will be described below.

[0093] The electrostatic chuck 16N of the substrate support 11N differs from the electrostatic chuck 16M of the substrate support 11M in that it has a portion 16pN as an adjustment portion. The portion 16pN constitutes substantially the entire first region 16R1. That is, the portion 16pN constitutes the portion of the first region 16R1 other than the chuck electrode 16a. The portion 16pN is formed from the same material as the material constituting the portion 16pM.

[0094] Reference will now be made to Fig. 18, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11P shown in Fig. 18 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11P and the substrate support 11A will be described below.

[0095] The electrostatic chuck 16P of the substrate support 11P includes a portion 16pP as an adjustment portion. The portion 16pP is one or more cavities and is provided in the main body 16m within the second region 16R2. The one or more cavities constituting the portion 16pP may extend in a circumferential direction relative to the central axis of the electrostatic chuck 16P or may be arranged along the circumferential direction. A material having a dielectric constant lower than that of the main body 16m may be provided in the one or more cavities constituting the portion 16pP. Note that the first region 16R1 may also provide one or more cavities.

[0096] Reference will now be made to Fig. 19, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11Q illustrated in Fig. 19 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11Q and the substrate support 11A will be described below.

[0097] The substrate support 11Q differs from the substrate support 11A in that it includes a base 14Q instead of the base 14. The base 14Q includes a base 14b (insulating member), a first electrode film 141, and a second electrode film 142. The base 14b is formed of an insulator such as SiC and has a substantially disk shape. The first electrode film 141 is provided below the first region 16R1 and on the upper surface of the base 14b. The second electrode film 142 is provided below the second region 16R2 and on the upper surface of the base 14b.

[0098] 19, the radio frequency power supply 31 and the bias power supply 32 (first bias power supply) are connected to the first electrode film 141. In one embodiment, the radio frequency power supply 31 and the bias power supply 32 may be connected to the first electrode film 141 via an electrode film 143 and a wiring 144. The electrode film 143 is formed below the first region 16R1 and on the lower surface of the base 14b. The electrode film 143 is connected to the first electrode film 141 via the wiring 144. The wiring 144 may be a via formed in the base 14b. The first electrode film 141 may be formed on the bottom surface of the electrostatic chuck 16A in the first region 16R1, and may be configured to receive power thereto via the wiring 144.

[0099] The bias power supply 33 (second bias power supply) is connected to the second electrode film 142. In one embodiment, the bias power supply 33 may be connected to the second electrode film 142 via an electrode film 145 and a wiring 146. The electrode film 145 is formed below the second region 16R2 and on the lower surface of the base 14b. The electrode film 145 is connected to the second electrode film 142 via the wiring 146. The wiring 146 may be a via formed in the base 14b. Note that the second electrode film 142 may be formed on the bottom surface of the electrostatic chuck 16A in the second region 16R2, and may be configured to receive power thereto via the wiring 146.

[0100] The high frequency power supply 31 is further connected to the second electrode film 142. An electrical path extending between the high frequency power supply 31 and the second electrode film 142 is connected to a node on the electrical path connecting the bias power supply 32 to the second electrode film 142. A high pass filter 70 is connected between this node and the high frequency power supply 31. The high pass filter 70 has the property of blocking or attenuating bias energy BE2 flowing toward the high frequency power supply 31 and passing the high frequency power RF.

[0101] Reference will now be made to Fig. 20, which illustrates a substrate support according to yet another exemplary embodiment. Differences between the embodiment illustrated in Fig. 20 and the embodiment illustrated in Fig. 19 will now be described.

[0102] 20, the high frequency power supply 31 is not electrically connected to the second electrode film 142, but is electrically connected to the first electrode film 141 (or the electrode film 143) together with the bias power supply 32. In addition, a low pass filter 32L is connected between the first electrode film 141 and the bias power supply 32. The low pass filter 32L has a characteristic of blocking or attenuating the high frequency power RF and passing the bias energy BE2.

[0103] In the embodiment shown in Fig. 20, a high frequency power supply 34 is electrically connected to the second electrode film 142 (or electrode film 145) together with the bias power supply 33. The high frequency power supply 34 is configured to generate high frequency power RF2 similar to the high frequency power RF. The high frequency power supply 34 is electrically connected to the second electrode film 142 via a matching device 34m. The matching device 34m has a matching circuit for matching the impedance of the load of the high frequency power supply 34 to the output impedance of the high frequency power supply 34.

[0104] 20, the bias power supply 33 is electrically connected to the second electrode film 142 via a low-pass filter 33L. The low-pass filter 33L is connected between the bias power supply 33 and a node where two electrical paths connecting the high-frequency power supply 34 and the bias power supply 33 to the second electrode film 142, respectively, join together.

[0105] Reference will now be made to Figure 21, which illustrates a substrate support according to yet another exemplary embodiment. Differences between the embodiment illustrated in Figure 21 and the embodiment illustrated in Figure 20 will now be described.

[0106] In the embodiment shown in FIG. 21, the high-frequency power supply 34 is not used. In the embodiment shown in FIG. 21, the high-frequency power supply 31 and the bias power supply 32 are electrically connected to the first electrode film 141 (or the electrode film 143). Furthermore, the high-frequency power supply 31 is electrically connected to the second electrode film 142 (or the electrode film 145). The high-frequency power supply 31 is electrically connected to the second electrode film 142 via an impedance adjuster 31i and a high-pass filter 31H. Furthermore, the high-frequency power supply 31 and the bias power supply 32 are electrically connected to the first electrode film 141 via a capacitor 31c. The impedance adjuster 31i and the high-pass filter 31H are connected between the second electrode film 142 and a branch node at which two electrical paths connecting the high-frequency power supply 31 to the first electrode film 141 and the second electrode film 142, respectively, branch off from each other. The capacitor 31c is electrically connected between the branch node and the first electrode film 141.

[0107] The high-pass filter 31H has a characteristic of blocking or attenuating the bias energy BE and passing the radio frequency power RF. The impedance adjuster 31i has a variable impedance. The impedance adjuster 31i may include, for example, a variable capacitance capacitor. The distribution ratio of the radio frequency power RF between the first electrode film 141 and the second electrode film 142 is adjusted by adjusting the impedance of the impedance adjuster 31i.

[0108] Reference will now be made to Fig. 22, which illustrates a substrate support according to yet another exemplary embodiment. Differences between the embodiment illustrated in Fig. 22 and the embodiment illustrated in Fig. 21 will now be described.

[0109] In the embodiment shown in FIG. 22, the bias power supply 33 and the high-pass filter 31H are not used. The radio frequency power supply 31 and the bias power supply 32 are electrically connected to the first electrode film 141 and the second electrode film 142. The impedance adjuster 31i is connected between the branch node and the second electrode film 142 (or the electrode film 145). The branch node is a node where an electrical path electrically connecting the radio frequency power supply 31 and the bias power supply 32 to the first electrode film 141 and an electrical path electrically connecting the radio frequency power supply 31 and the bias power supply 32 to the second electrode film 142 branch off from each other. In the embodiment shown in FIG. 22, the distribution ratio of the radio frequency power RF and the bias energy BE between the first electrode film 141 and the second electrode film 142 is adjusted by adjusting the impedance of the impedance adjuster 31i.

[0110] Reference will now be made to Figures 23 to 25, each of which illustrates a substrate support according to yet another exemplary embodiment. Below, differences between the embodiment shown in Figure 23 and the embodiment shown in Figure 4 will be described. Also, differences between the embodiment shown in Figure 24 and the embodiment shown in Figure 5 will be described. Also, differences between the embodiment shown in Figure 25 and the embodiment shown in Figure 6 will be described.

[0111] In the embodiments shown in each of Figures 23 to 25, a bias electrode 16e is not provided in the electrostatic chuck. A portion 16pA is provided below and near the chuck electrode 16a. A bias power supply 32 is electrically connected to the portion 16pA. In the embodiments shown in each of Figures 23 to 25, since a bias electrode 16e is not provided, the structure of the electrostatic chuck is simpler.

[0112] Reference will now be made to Fig. 28, which is a diagram illustrating a substrate support according to yet another exemplary embodiment. The substrate support 11R illustrated in Fig. 28 can be used as the substrate support 11 of the plasma processing apparatus 1. Differences between the substrate support 11R and the substrate support 11J illustrated in Fig. 13 will be described below.

[0113] In the substrate support 11R, a space 16s is formed in a main body 16m of an electrostatic chuck 16J. The space 16s is a continuous cavity. The space 16s may be formed between an electrode 161J and the lower surface of the main body 16m.

[0114] A heat transfer gas supply source (not shown) may be connected to the space 16s. A heat transfer gas (e.g., He gas) from the heat transfer gas supply source may be supplied to the back side of the substrate W through the space 16s and a supply port (not shown).

[0115] Alternatively, a heat medium (such as Galden (registered trademark)) may be supplied to the space 16s to adjust the temperature of the electrostatic chuck 16J. In this case, the heat medium is circulated between a heat medium supplying device (not shown) and the space 16s.

[0116] The electrostatic chuck of the substrate support according to the various exemplary embodiments described above can be manufactured by the manufacturing method described below. In the manufacturing method, a plurality of green sheets that will later constitute the electrostatic chuck are stacked. Then, the stacked plurality of green sheets are sintered. In this manner, the electrostatic chuck can be manufactured.

[0117] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0118] 26, the second region 16R2 may not have the chuck electrodes 16b and 16c. Also, in the embodiments shown in each of FIGS. 3 to 8, the portion 16pA may be replaced with any of the portions 16pE, 16pF, 16pH, 16pJ, 16pK, 16pL, 16pM, and 16pN. The base 14Q may be used in place of the base of a substrate support of various embodiments other than the substrate support 11Q.

[0119] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E20] below.

[0120] [E1] The base and an electrostatic chuck provided on the base; Equipped with The electrostatic chuck comprises: a first region configured to hold a substrate disposed thereon; a second region extending to surround the first region and configured to support an edge ring disposed thereon; Including, the thickness of the first region is greater than the thickness of the second region; the electrostatic chuck has a portion configured to reduce a difference between an electrostatic capacitance per unit area of ​​the first region between an upper surface of the first region and the base and an electrostatic capacitance per unit area of ​​the second region between an upper surface of the second region and the base, the portion being provided in at least one of the first region and the second region; Board support.

[0121] In the electrostatic chuck having the above-described portions, the thickness of the first region is greater than the thickness of the second region, but the difference between the capacitance per unit area of ​​the first region and the capacitance per unit area of ​​the second region is small, thereby making it possible to reduce the difference in impedance between the base and the substrate and the impedance between the base and the edge ring in the substrate support.

[0122] [E2] the portion is provided within the first region, a first electrode; a second electrode extending below the first electrode; an interconnector that electrically connects the first electrode and the second electrode to each other; Including, [E1] The substrate support according to [E2].

[0123] [E3] The substrate support according to [E2], wherein the first electrode is arranged so that the distance between the first electrode and the upper surface of the first region decreases stepwise or gradually as the radial distance from the center of the first region increases.

[0124] [E4] The substrate support according to [E1], wherein the portion includes a conductive plate provided in the first region.

[0125] [E5] The substrate support according to [E1], wherein the portion is provided in the first region and is made of a metal matrix composite material.

[0126] [E6] The substrate support according to [E1], wherein the portion is provided in or constitutes the first region and is formed from a material having a dielectric constant higher than the dielectric constant of the dielectric material constituting the second region.

[0127] [E7] The substrate support according to [E1], wherein the portion provides a cavity in the second region.

[0128] [E8] The substrate support according to any one of [E1] to [E7], wherein the base is made of metal.

[0129] [E9] the base includes an upper surface formed from a metal; the portion is disposed in a first region; An electrode; an interconnector electrically connecting the electrode and the top surface of the base; Including, [E1] The substrate support according to [E2].

[0130] [E10] The base is a base formed from an insulator; a first electrode film provided below the first region and on an upper surface of the base; a second electrode film disposed below the second region and on the top surface of the base; The substrate support according to any one of [E1] to [E7], comprising:

[0131] [E11] The substrate support according to any one of [E1] to [E10], wherein the electrostatic chuck further includes a bias electrode provided therein.

[0132] [E12] The substrate support according to [E11], wherein the bias electrode is provided in the first region between an upper surface of the first region and the portion.

[0133] [E13] The substrate support according to [E12], wherein the electrostatic chuck further includes another bias electrode provided in the second region.

[0134] [E14] a chamber; a substrate support according to any one of [E1] to [E13] provided in the chamber; a radio frequency power source configured to generate radio frequency power to generate a plasma from the gas within the chamber; a bias power supply configured to generate bias energy to attract ions from the plasma to the substrate support; Equipped with At least one of the high frequency power and the bias energy is supplied through the base.

[0135] [E15] The substrate support is the substrate support according to [E8], At least one of the high frequency power supply and the bias power supply is electrically connected to the base of the substrate support. [E14] The plasma processing apparatus according to the present invention.

[0136] [E16] The plasma processing apparatus according to [E15], wherein both the high frequency power supply and the bias power supply are electrically connected to the base.

[0137] [E17] The substrate support is the substrate support according to [E10], the high frequency power supply is electrically connected to the first electrode film and the second electrode film; the bias power supply is electrically connected to the first electrode film, Further comprising another bias power supply electrically connected to the second electrode film; [E14] The plasma processing apparatus according to the present invention.

[0138] [E18] The substrate support is the substrate support according to [E11] or [E12], the bias power supply is electrically connected to the bias electrode; [E14] The plasma processing apparatus according to the present invention.

[0139] [E19] The substrate support is a substrate support according to [E13], the bias power supply is electrically connected to the bias electrode disposed in the first region; the bias power supply or another bias power supply is electrically connected to the other bias electrode provided in the second region; [E14] The plasma processing apparatus according to the present invention.

[0140] [E20] A method for manufacturing an electrostatic chuck of a substrate support according to any one of [E1] to [E13], laminating a plurality of green sheets; sintering the stacked green sheets; A manufacturing method comprising:

[0141] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0142] 1...plasma processing apparatus, 10...chamber, 11...substrate support, W...substrate, 11e...edge ring, 14...base, 16...electrostatic chuck, 16R1...first region, 16R2...second region, 16pA...portion, 31...high frequency power supply, 32...bias power supply.

Claims

1. a plasma processing chamber; a substrate support disposed within the plasma processing chamber, The base and an electrostatic chuck disposed on the base and having a central region having a substrate support surface and an annular region surrounding the central region, the annular region having a thickness smaller than the thickness of the central region; a chuck electrode disposed within the central region; an electrode structure disposed below the chuck electrode in the central region and placed in an electrically floating state, the electrode structure including a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer, the first electrode layer and the second electrode layer extending across the substrate support surface in a plan view; the substrate support, an RF power source; at least one bias power supply; Equipped with the RF power supply and / or at least one bias power supply are electrically connected to the base; Plasma processing equipment.

2. The plasma processing apparatus according to claim 1 , wherein the first electrode layer and the second electrode layer extend over substantially the entire area of ​​the substrate support surface in a plan view.

3. 3. The plasma processing apparatus according to claim 1, wherein the first electrode layer is arranged such that the distance between the first electrode layer and the substrate support surface decreases stepwise or gradually as the distance from the center of the central region increases in the radial direction.

4. The base is an insulating member; a first electrode film disposed below the central region and on the insulating member; a second electrode film disposed below the annular region and on the insulating member; The plasma processing apparatus according to claim 1 or 2, comprising:

5. the at least one bias power supply includes a first bias power supply and a second bias power supply; the first bias power supply is electrically connected to the first electrode film; the second bias power supply is electrically connected to the second electrode film; The plasma processing apparatus according to claim 4 .

6. 3. The plasma processing apparatus according to claim 1, further comprising a bias electrode disposed in the central region and extending across the substrate support surface in a plan view.

7. The plasma processing apparatus of claim 6 , wherein the bias electrode is disposed between the chuck electrode and the electrode structure.

8. The plasma processing apparatus of claim 7 , wherein the at least one bias power supply is electrically connected to the bias electrode.

9. The plasma processing apparatus of claim 6 , further comprising another bias electrode disposed within the annular region.

10. The plasma processing apparatus of claim 9 , wherein the at least one bias power supply is electrically connected to the bias electrode and the another bias electrode.

11. the at least one bias power supply includes a first bias power supply and a second bias power supply; the first bias power supply is electrically connected to the bias electrode; the second bias power supply is electrically connected to the other bias electrode; The plasma processing apparatus according to claim 9 .

12. The plasma processing apparatus according to claim 1 , wherein the base is made of metal.

13. The plasma processing apparatus of claim 12 , wherein the RF power source and the at least one bias power source are electrically connected to the pedestal.

14. The method of claim 1, further comprising: the at least one bias power supply is electrically connected to the bias electrode; 3. The plasma processing apparatus according to claim 1 or 2.

15. A base; an electrostatic chuck having a central region having a substrate support surface and an annular region surrounding the central region, the annular region having a thickness less than a thickness of the central region; a chuck electrode disposed within the central region; an electrode structure disposed below the chuck electrode in the central region and placed in an electrically floating state, the electrode structure including a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer, the first electrode layer and the second electrode layer extending across the substrate support surface in a plan view; A substrate support comprising:

16. a plasma processing chamber; a substrate support disposed within the plasma processing chamber, The base and an electrostatic chuck disposed on the base and having a central region having a substrate support surface and an annular region surrounding the central region, the annular region having a thickness smaller than the thickness of the central region; a chuck electrode disposed within the central region; an electrode structure disposed below the chuck electrode in the central region, the electrode structure including a first electrode layer extending across the substrate support surface in a plan view, and one or more connectors electrically connecting the first electrode layer and the base; the substrate support, at least one power source electrically connected to the base; A plasma processing apparatus comprising:

Images