Inorganic coatings for plasma chamber components

Abstract

A component for use in a plasma processing chamber is provided. The component body is made of an electrically conductive material. A first ceramic coating of a first ceramic material is disposed on a surface of the component body, the first ceramic coating having a first side adjacent to the component body and a second side remote from the component body, the first ceramic material being a dielectric material. A second ceramic coating of a second ceramic material is disposed on the second side of the first ceramic coating, the second ceramic coating having a gap therebetween, the gap being filled with at least one of a polymer material or a gas, the second ceramic material being a dielectric material.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Patent Application No. 62 / 913,619, filed October 10, 2019, which is incorporated herein by reference for all purposes.

[0002] FIELD OF THE DISCLOSURE This disclosure relates to semiconductor device manufacturing, and more particularly, to coating chamber surfaces used in semiconductor device manufacturing. [Background technology]

[0003] The background description provided herein is intended to provide a general overview of the contents of the present disclosure. Nothing in this background section, and any aspects that may be present in the description, is admitted, expressly or impliedly, as prior art with respect to this application.

[0004] During semiconductor wafer processing, plasma processing chambers are used to process semiconductor devices, and coatings are used to protect the chamber surfaces.

[0005] In the formation of semiconductor devices, plasma processing chambers are used to process substrates. Some plasma processing chambers have aluminum alloy components, such as liners within the plasma processing chamber. Such components may be aluminum to provide electrical and thermal properties useful for sustaining the plasma. Aluminum also allows for weight and cost savings. However, such aluminum components may be corroded by the plasma used during plasma processing. Coatings may be used to protect the aluminum components.

[0006] Ceramic coatings are formed on plasma processing chamber components to protect them from plasma corrosion. These coatings are subject to stress due to mismatched thermal expansion coefficients and fluorination from exposure to fluorine plasma, which can result in component failure or contaminant generation. Generally, the coefficient of thermal expansion (CTE) of an aluminum ESC body is greater than that of a ceramic protective coating. The difference in CTE between the ESC body and the protective coating can lead to cracking of the protective coating. Summary of the Invention

[0007] In order to solve the aforementioned problems and in accordance with the objects of the present disclosure, a component for use in a plasma processing chamber is provided. The component body is made of an electrically conductive material. A first ceramic coating made of a first ceramic material is disposed on a surface of the component body, the first ceramic coating having a first side adjacent to the component body and a second side remote from the component body, the first ceramic material being a dielectric material. A second ceramic coating made of a second ceramic material is disposed on the second side of the first ceramic coating, a gap is formed between the first and second ceramic coatings, the gap being filled with at least one of a polymer material or a gas, and the second ceramic material being a dielectric material.

[0008] In another aspect, a method for coating a component body for use in a plasma processing chamber is provided. A first ceramic coating is formed on a surface of the component body, the first ceramic coating having a first side adjacent to the component body and a second side remote from the component body, the component body comprising an electrically conductive material, and the first ceramic coating comprising a dielectric material. A polymer layer is formed on the second side of the first ceramic coating, the polymer layer having a first side adjacent to the second side of the first ceramic coating and a second side remote from the first ceramic coating. A second ceramic coating is formed on the second side of the polymer layer, the second ceramic coating comprising a dielectric material.

[0009] In another aspect, a method for coating a component body for use in a plasma processing chamber is provided, wherein a ceramic coating is formed on a surface of the component body, the component body comprising an electrically conductive material and the ceramic coating comprising a dielectric material, and an ion exchange process forms a compressive layer in the ceramic coating.

[0010] In another aspect, a component for use in a plasma processing chamber is provided. The component body is made of an electrically conductive material. A diamond-like carbon coating is provided on a surface of the component. A ceramic coating is provided on the diamond-like carbon coating.

[0011] In another aspect, a method of coating a component body for use in a plasma processing chamber is provided, wherein a diamond-like carbon coating is formed on a surface of the component body, the component body being made of an electrically conductive material, and a ceramic coating is deposited over the diamond-like carbon coating.

[0012] In another aspect, a method of coating a component body for use in a plasma processing chamber is provided, wherein a metal oxide coating is deposited on the component body by at least one of metal oxide chemical vapor deposition or plasma-enhanced vapor deposition at a temperature less than 300° C.

[0013] These and other features of the present disclosure will be described in more detail below in conjunction with the detailed description of the disclosure and the following drawings. [Brief explanation of the drawings]

[0014] The present disclosure is illustrated in the following accompanying drawings, given by way of example and not by way of limitation, in which like reference numerals refer to like elements and in which:

[0015] [Figure 1] FIG. 1 is a high-level flow chart of an embodiment.

[0016] [Figure 2A] FIG. 2A is a schematic diagram of a substrate being processed according to the embodiment shown in FIG. [Figure 2B] FIG. 2B is a schematic diagram of a substrate being processed according to the embodiment shown in FIG. [Figure 2C] FIG. 2C is a schematic diagram of a substrate being processed according to the embodiment shown in FIG. [Figure 2D] FIG. 2D is a schematic diagram of a substrate being processed according to the embodiment shown in FIG.

[0017] [Figure 3] FIG. 3 is a schematic diagram of a plasma processing system that may be used in embodiments.

[0018] [Figure 4] FIG. 4 is a high level flow chart of another embodiment.

[0019] [Figure 5A]FIG. 5A is a schematic diagram of a substrate being processed according to the embodiment shown in FIG. [Figure 5B] FIG. 5B is a schematic diagram of a substrate being processed according to the embodiment shown in FIG.

[0020] [Figure 6] FIG. 6 is a high level flow chart of another embodiment.

[0021] [Figure 7A] FIG. 7A is a schematic diagram of a substrate being processed according to the embodiment shown in FIG. [Figure 7B] FIG. 7B is a schematic diagram of a substrate being processed according to the embodiment shown in FIG.

[0022] [Figure 8] FIG. 8 is a high level flow chart of another embodiment.

[0023] [Figure 9] FIG. 9 is a schematic illustration of a substrate being processed according to the embodiment shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0024] The present disclosure will be described in detail with reference to several preferred embodiments as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and / or structures have not been described in detail in order to avoid unnecessarily obscuring the present disclosure.

[0025] In electrostatic chucks (ESCs) in plasma processing chambers, plasma conditions can cause erosion of the ESC. A protective coating can be applied to the surface of the ESC. Aluminum ESC bodies typically have a higher coefficient of thermal expansion (CTE) than ceramic protective coatings. The difference in CTE between the ESC body and the protective coating can lead to cracks in the protective coating.

[0026] Several embodiments are provided for providing improved protective coatings. To facilitate understanding of the embodiments, FIG. 1 illustrates a high-level flowchart of a process used in an embodiment for coating a component body. A component body is placed (Step 104). In this example, the component body is made of an electrically conductive material, such as aluminum with an anodized surface. A first ceramic coating of a ceramic material is applied to the surface of the component body (Step 108). FIG. 2A is a partial schematic cross-sectional view of a component body 204 having a first ceramic coating 208 thereon. In this embodiment, the first ceramic coating 208 is deposited by thermal spray deposition. In other embodiments, the first ceramic coating may be deposited by plasma vapor deposition (PVD), chemical vapor deposition (CVD), or aerosol deposition. In this embodiment, the ceramic material is yttria. The component body 204 is on a first side of the first ceramic coating 208.

[0027] Thermal spraying is a general term used to describe various coating processes, including plasma spraying, arc spraying, flame / combustion spraying, and suspension spraying. All thermal spraying processes use energy to heat a solid to a molten or plasticized state. The molten or plasticized material is accelerated toward the substrate and then cooled to coat the surface of the substrate. These processes differ from vapor deposition processes, which use vaporized material instead of molten material. In this embodiment, the ceramic coating has a thickness of 25 to 500 microns. The first ceramic coating has a porosity ranging from 0.5% to 20%. In this specification and claims, porosity is measured according to standard test method ASTM E2109-01(2014).

[0028] A polymer layer of a polymer material is deposited on the first ceramic coating 208. The polymer may be deposited by at least one of atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma-enhanced vapor deposition (PVD), plasma-enhanced vapor deposition (PEVD), a spin-on process, or other polymer deposition methods. FIG. 2B is a partial schematic cross-sectional view of the component body 204 with the first ceramic coating 208 after the polymer layer 212 has been deposited. In this embodiment, the polymer layer 212 is formed from parylene. In this embodiment, the polymer layer 212 has a thickness of 25 to 500 microns.

[0029] A second ceramic coating of a ceramic material is deposited on the polymer layer 212 (step 116). In this embodiment, the second ceramic coating is deposited by chemical vapor deposition (CVD). In other embodiments, the second ceramic coating may be deposited by plasma enhanced vapor deposition (PVD) or aerosol deposition. In this embodiment, the ceramic material is yttria. In this embodiment, the second ceramic coating has a thickness of 25 to 500 microns. The second ceramic coating has a porosity of less than 0.5%.

[0030] 2C is a partial schematic cross-sectional view of component body 204 after depositing (step 116) second ceramic coating 216. In this example, second ceramic coating 216 surrounds polymer layer 212 and extends to first ceramic coating 208.

[0031] The polymer layer 212 is removed (step 120). In this embodiment, a combustion gas containing oxygen is provided. The combustion gas is converted into a plasma. The plasma burns and removes the polymer layer 212, leaving behind a void. Figure 2D is a partial schematic cross-sectional view of the component body 204 after the polymer layer 212 has burned (step 120), leaving behind a void 220. In other embodiments, the polymer layer 212 is melted.

[0032] The component is packaged as part of a plasma processing chamber (step 124). In this embodiment, the component is an electrostatic chuck (ESC). FIG. 3 is a schematic diagram of a plasma processing chamber 300 for plasma processing a substrate, in which the component may be installed in an embodiment. In one or more embodiments, the plasma processing chamber 300 includes a gas distribution plate 306 with a gas inlet and an ESC component 316 within a plasma processing chamber 304 surrounded by a chamber wall 350. A substrate 307 is placed on top of the ESC component 316 within the plasma processing chamber 304. The ESC component 316 may provide a bias from an ESC power supply 348. A gas source 310 is connected to the plasma processing chamber 304 through the gas distribution plate 306. An ESC temperature controller 351 is connected to the ESC component 316 and provides temperature control for the ESC component 316. A radio frequency (RF) power supply 330 provides RF power to the ESC component 316 and an upper electrode. In this embodiment, the upper electrode is the gas distribution plate 306. In a preferred embodiment, 400 kilohertz (kHz), 13.56 megahertz (MHz), 1 MHz, 2 MHz, 60 MHz, and / or optionally 27 MHz power sources comprise the RF power source 330 and the ESC power source 348. A controller 335 is controllably connected to the RF power source 330, the ESC power source 348, the exhaust pump 320, and the gas source 310. The high-flow liner 360 is a liner within the plasma processing chamber 304, having grooves 362 that confine gas from the gas source. The grooves 362 maintain a controlled gas flow rate to allow gas to pass from the gas source 310 to the exhaust pump 320. One example of such a plasma processing chamber is the Flex® Etch system manufactured by Lam Research Corporation (Fremont, CA). In various embodiments, the processing chamber may be a CCP (capacitively coupled plasma) reactor or an ICP (inductively coupled plasma) reactor.

[0033] The plasma processing chamber 304 plasma processes the substrate 307 using the ESC components 316 (step 128). The plasma processing may be one or more of etching, deposition, passivation, or another plasma process. The plasma processing may be performed in combination with a non-plasma process. In such a process, the ESC components 316 may be exposed to a plasma containing a halogen and / or oxygen.

[0034] Various components of the plasma processing chamber 304 utilize conductive metal substrates coated with dielectric materials such as aluminum oxide or yttrium oxide deposited by thermal spray or plasma spray processes, including the ESC pinnacles and liners, and the gas distribution plate 306.

[0035] A defect-free dielectric coating is crucial for maintaining both electrical standoff and chemical resistance. Thicker dielectric ceramic coatings are more susceptible to cracking. Thinner dielectric ceramic coatings do not provide sufficient insulation to prevent damage caused by the voltages used by the plasma processing chamber 304. The use of two thin ceramic coatings, the first ceramic coating 208 and the second ceramic coating 216, reduces cracking compared to thicker ceramic coatings. Additionally, the gap 220 provides the first ceramic coating 208 and the second ceramic coating 216 with a higher dielectric strength, increasing the standoff voltage and reducing electrical damage.

[0036] In other embodiments, a wall, plug, or pillar can be used to separate the first ceramic coating 208 and the second ceramic coating 216 after removing the polymer layer 212. In other embodiments, other methods can be used to create the gap 220 by providing a support. For example, a ring can be placed on the first ceramic coating before the polymer layer fills the ring with polymer. The gap 220 can be filled with air to act as an air gap.

[0037] In other embodiments, the polymer layer 212 does not burn away. The polymer layer 212 has a higher dielectric strength than the first ceramic coating 208 and the second ceramic coating 216. However, the polymer layer 212 is rapidly corroded by the plasma. Therefore, the second ceramic coating 216 covers the polymer layer and protects it from the plasma. Such embodiments may provide improved standoff voltage and improved thermal insulation.

[0038] In various embodiments, first ceramic coating 208 and second ceramic coating 216 may be formed from alumina, yttria, zirconia, stabilized zirconia, yttrium-aluminum compounds (such as yttrium aluminum garnet), or magnesium aluminum oxide (MgAl2O4) spinel. In other embodiments, first ceramic coating 208 and second ceramic coating 216 may be formed from rare earth materials such as erbium oxide, dysprosium oxide, cerium oxide, gadolinium oxide, and ytterbium oxide. In some embodiments, first ceramic coating 208 is made of the same material as second ceramic coating 216. When first ceramic coating 208 and second ceramic coating 216 are made of the same material, first ceramic coating 208 and second ceramic coating 216 have the same CTE.

[0039] Figure 4 is a high-level flow chart of another embodiment. A component body is placed (step 404). The component body is made from a conductive material. A ceramic coating is deposited on the surface of the component body (step 408). Figure 5A is a schematic cross-sectional view of the component body 504 after the ceramic coating 508 has been deposited on the surface of the component body 504 (step 408). In this embodiment, the component body is aluminum with an anodized surface. In this example, a thermal spray process is used to deposit the alumina ceramic coating.

[0040] The ion exchange process forms a compressive layer in the ceramic coating 508 (step 412). In this example, the ion exchange is achieved by subjecting the ceramic coating 508 to vacuum ion bombardment. The ion bombardment may be achieved by applying a bias to a plasma of ions. The bias accelerates the ions, implanting them into the ceramic coating 508. FIG. 5B is a schematic cross-sectional view of the component body 504 after the compressive layer 512 has been formed in the ceramic coating 508 (step 412). The ions take up more space, causing compression. The component is packaged as part of the plasma processing chamber 300 (step 416). The component is used in the plasma processing chamber 300 (step 420). It has been found that the compressive layer 512 hardens the ceramic coating 508 and can make it more resistant to cracking caused by stress during handling and temperature cycling. Thus, the compressive layer 512 helps prevent cracking caused by high temperatures.

[0041] In other embodiments, a bath may be used to perform the ion exchange. A bath temperature above a certain temperature may be used to facilitate the ion exchange. The ion exchange bath may be a molten salt bath at a temperature below the melting point of the ceramic coating 508. The alkali ions in the ceramic coating 508 may be exchanged with more abundant ions from the bath, which induces compressive stress. In other embodiments, a diffusion process may be used to form the compressive layer 512.

[0042] 6 is a high-level flow chart of another embodiment. A component body is placed (step 604). In this embodiment, the component body is made of a conductive material, such as aluminum. A diamond-like coating is formed on the surface of the component body (step 608). One example of a process for depositing a diamond-like coating uses a combination of heat and pressure to form a diamond-like coating on the surface of the component body. 2 The carbon atoms bonded together are compressed enough to form sp 3 7A is a schematic partial cross-sectional view of a component body 704 after a diamond-like carbon layer 708 has been deposited on the surface of the component body 704.

[0043] A ceramic coating is formed on the diamond-like carbon layer 708 (step 612). In an embodiment, the ceramic coating is formed by atomic layer deposition or chemical vapor deposition. Figure 7B is a schematic cross-sectional view of the component body 704 after the ceramic coating 712 is formed on the diamond-like carbon layer 708. The component is mounted in the plasma processing chamber 300 (step 616). The component is used in the plasma processing chamber (step 624).

[0044] The diamond-like carbon layer 708 has high dielectric strength and high physical strength. However, the diamond-like carbon layer 708 is susceptible to corrosion by plasma containing oxygen or halogen. Therefore, a ceramic coating 712 is provided to protect the diamond-like carbon layer 708 from corrosion by plasma containing oxygen or halogen. The ceramic coating 712 may be thin. A more non-porous ceramic coating 712 is desirable. Ceramic coatings formed by atomic layer deposition or chemical vapor deposition have such properties. In this embodiment, the thickness of the second ceramic coating is 100 nanometers to 500 microns. The second ceramic coating has a porosity of less than 0.5%.

[0045] FIG. 8 is a high-level flowchart of another embodiment. A component body is provided (step 804). In this example, the component body is aluminum. A metal oxide coating is deposited on the surface of the component body (step 808). In this example, the metal oxide coating is aluminum oxide (Al2O3). Instead of oxidizing the component body, the metal oxide is deposited by low-temperature metal oxide chemical vapor deposition (MOCVD) or plasma-enhanced chemical vapor deposition (PECVD). In this embodiment, the metal oxide is formed at a temperature less than 300°C. In other embodiments, the metal oxide is formed at a temperature less than 200°C. In other embodiments, the metal oxide is formed at a temperature less than 100°C. FIG. 9 is a schematic cross-sectional view of a component body 904 having a metal oxide coating 908. The component is mounted in a plasma processing chamber 300 (step 812). The component is used in the plasma processing chamber 300 (step 816).

[0046] While the present disclosure has been described in terms of several preferred embodiments, there are alterations, substitutions, modifications, and various substitute equivalents that fall within the scope of the present disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. Therefore, it is intended that the following appended claims be interpreted to include all such alterations, substitutions, and various substitute equivalents that fall within the true spirit and scope of the present disclosure. The present disclosure can also be realized in the following forms. [Form 1] 1. A component for use in a plasma processing chamber, comprising: a component body made of a conductive material; a first ceramic coating on a surface of the component body, the first ceramic coating being made of a first ceramic material, the first ceramic material having a first side adjacent to the component body and a second side remote from the component body, the first ceramic material being a dielectric material; a second ceramic coating on the second side of the first ceramic coating, the second ceramic coating being made of a second ceramic material, wherein a gap exists between the first ceramic coating and the second ceramic coating, the gap being filled with at least one of a polymer material or a gas, and the second ceramic material is a dielectric material; and A component comprising: [Form 2] The component according to aspect 1, The component, wherein the first ceramic coating and the second ceramic coating comprise at least one of alumina, yttria, zirconia, stabilized zirconia, yttrium-aluminum mixture, erbium oxide, dysprosium oxide, cerium oxide, gadolinium oxide, magnesium aluminum oxide spinel, and ytterbium oxide. [Form 3] The component according to aspect 1, The component further comprises at least one support between the first ceramic coating and the second ceramic coating to maintain the gap between the first ceramic coating and the second ceramic coating. [Form 4] The component according to aspect 1, The first ceramic material is the same as the second ceramic material of the component. [Form 5] 1. A method of coating a component body for use in a plasma processing chamber, comprising: forming a first ceramic coating on a surface of the component body, the first ceramic coating having a first side adjacent to the component body and a second side remote from the component body, the component body being a conductive material and the first ceramic coating being a dielectric material; forming a polymer layer on the second side of the first ceramic coating, the polymer layer having a first side adjacent to the second side of the first ceramic coating and a second side remote from the first ceramic coating; forming a second ceramic coating of a dielectric material on the second side of the polymer layer; A method comprising: [Form 6] 6. The method of claim 5, The method further comprising removing the polymer layer after forming the second ceramic coating. [Form 7] 6. The method of claim 5, The method, wherein the first ceramic coating is made of a first ceramic material and the second ceramic coating is made of a second ceramic material, and the first ceramic material is the same as the second ceramic material. [Form 8] 1. A method of coating a component body for use in a plasma processing chamber, comprising: forming a ceramic coating of a dielectric material on a surface of the component body of a conductive material; forming a compressive layer in said ceramic coating by an ion exchange process; A method comprising: [Form 9] 9. The method of claim 8, further comprising: The method wherein said forming said compressive layer comprises subjecting said ceramic coating to vacuum ion bombardment. [Form 10] 9. The method of claim 8, further comprising: The method of claim 1, wherein said forming said compact layer comprises immersing said ceramic coating in a bath at a temperature sufficient to cause ion exchange or a diffusion process to implant ions into said ceramic coating. [Form 11] A component produced by the method of aspect 8. [Form 12] 1. A component for use in a plasma processing chamber, comprising: a component body including a conductive material; a diamond-like carbon coating on a surface of the component body; A ceramic coating is applied on the diamond-like carbon coating. A component comprising: [Form 13] 13. The component according to claim 12, The component, wherein the ceramic coating is a dielectric coating formed by at least one of atomic layer deposition or chemical vapor deposition. [Form 14] 1. A method of coating a component body for use in a plasma processing chamber, comprising: forming a diamond-like carbon coating on a surface of the component body comprising an electrically conductive material; depositing a ceramic coating over the diamond-like carbon coating; A method comprising: [Form 15] 15. The method of claim 14, The method, wherein the deposition of the ceramic coating comprises at least one of atomic layer deposition or chemical vapor deposition. [Form 16] 1. A method of coating a component body for use in a plasma processing chamber, comprising: depositing a metal oxide coating on the component body by at least one of metal oxide chemical vapor deposition or plasma enhanced vapor deposition at a temperature below 300°C. [Form 17] 17. The method of claim 16, The method, wherein the component body comprises aluminum and is electrically conductive. [Form 18] A component produced by the method of claim 16.

Claims

1. 1. A component for use in a plasma processing chamber, comprising: a component body made of a conductive material; a first ceramic coating on a surface of the component body, the first ceramic coating being made of a first ceramic material, the first ceramic material having a first side adjacent to the component body and a second side remote from the component body, the first ceramic material being a dielectric material; a second ceramic coating on the second side of the first ceramic coating, the second ceramic coating being made of a second ceramic material, wherein a gap exists between the first ceramic coating and the second ceramic coating, the gap being filled with at least one of a polymer material or a gas, and the second ceramic material is a dielectric material; and Equipped with The component, wherein the polymer layer formed by the polymer material filling the gap has a higher dielectric strength than the first ceramic coating and the second ceramic coating.

2. 10. The component of claim 1, wherein the first ceramic coating and the second ceramic coating comprise at least one of alumina, yttria, zirconia, stabilized zirconia, yttrium aluminum mixture, erbium oxide, dysprosium oxide, cerium oxide, gadolinium oxide, magnesium aluminum oxide spinel, and ytterbium oxide.

3. 10. The component of claim 1, The component further comprises at least one support between the first ceramic coating and the second ceramic coating to maintain the gap between the first ceramic coating and the second ceramic coating.

4. 10. The component of claim 1, The component, wherein the first ceramic material is the same as the second ceramic material.

5. 1. A method of coating a component body for use in a plasma processing chamber, comprising: forming a first ceramic coating on a surface of the component body, the first ceramic coating having a first side adjacent the component body and a second side remote from the component body, the component body being a conductive material and the first ceramic coating being a dielectric material; forming a polymer layer on the second side of the first ceramic coating, the polymer layer having a first side adjacent to the second side of the first ceramic coating and a second side remote from the first ceramic coating; forming a second ceramic coating of a dielectric material on the second side of the polymer layer; Including, The method wherein the polymer layer has a higher dielectric strength than the first ceramic coating and the second ceramic coating.

6. 6. The method of claim 5, The method, wherein the first ceramic coating is comprised of a first ceramic material and the second ceramic coating is comprised of a second ceramic material, and the first ceramic material is the same as the second ceramic material.

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