Object processing apparatus, object processing method, and method for manufacturing a master plate

Abstract

To reduce the roughness of the surface of a target object.SOLUTION: The method for processing a target object includes: a first step of conveying a target object into a processing room; a second step of generating at least one of first ions containing carbon and first plasma containing carbon and forming a film containing carbon on the target object by using at least one of the first ions and the first plasma; and a third step of generating second plasma from a second gas including at least one selected from oxygen, nitrogen, and rare gas and removing a film by reaction of the second plasma and the film. The second step and the third step are switched alternately seamlessly in the processing room.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to an object processing apparatus, an object processing method, and a method for manufacturing a master plate.

Background Art

[0002] In recent years, a technique for processing the surface of an object using an object processing apparatus such as an object substrate apparatus has been known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the invention of the embodiment is to reduce the roughness of the surface of the object.

Means for Solving the Problems

[0005] The object processing method of the embodiment includes a first step of loading an object into a processing chamber, generating at least one of a first ion containing carbon and a first plasma containing carbon, and forming a film containing carbon on the object using at least one of the first ion and the first plasma; a second step of generating a second plasma from a second gas including at least one selected from the group consisting of oxygen, nitrogen, and a rare gas, and removing the film by the reaction of the second plasma and the film; and switching the second step and the third step seamlessly and alternately in the processing chamber.

Brief Description of the Drawings

[0006] [Figure 1] It is a schematic diagram for explaining an example of the object processing method. [Figure 2]This is a schematic diagram with an oblique view illustrating an example of template structure. [Figure 3] This is a schematic cross-sectional diagram illustrating an example of the template's structure. [Figure 4] This is a schematic top view diagram illustrating an example of a surface MS layout. [Figure 5] This is a schematic cross-sectional diagram illustrating an example of a surface MS layout. [Figure 6] This is a schematic diagram illustrating the changes in the object caused by the carbon film formation process S2 and the carbon film removal process S3. [Figure 7] This is a schematic diagram illustrating the changes in the object caused by the carbon film formation process S2 and the carbon film removal process S3. [Figure 8] This is a schematic diagram illustrating the changes in the object caused by the carbon film formation process S2 and the carbon film removal process S3. [Figure 9] This is a schematic diagram showing an example configuration of the object processing device 100. [Figure 10] This is a timing chart to illustrate an example of an object processing method. [Figure 11] This is a schematic diagram showing an example of the configuration of the transport unit. [Figure 12A] This is a schematic cross-sectional diagram illustrating an example of a processing method for another example of the object in question. [Figure 12B] This is a schematic cross-sectional diagram illustrating an example of a processing method for another example of the object in question. [Figure 13] This is a schematic diagram showing another configuration example of the object processing device 100. [Figure 14] This is a timing chart to illustrate an example of an object processing method. [Figure 15] This is a schematic diagram showing another configuration example of the object processing device 100. [Figure 16] This is a timing chart to illustrate an example of an object processing method. [Figure 17] This is a schematic diagram illustrating an example of the carbon film formation process S2 using a magnetic material. [Figure 18]It is a schematic diagram for explaining the behavior of cations P in the carbon film forming step S2 when the magnetic body 122 is present.

Embodiments for Carrying Out the Invention

[0007] Hereinafter, embodiments will be described with reference to the drawings. The relationship between the thickness and the planar dimensions of each component shown in the drawings, the ratio of the thicknesses of each component, etc. may differ from the actual object. Also, in the embodiments, substantially the same components are denoted by the same reference numerals and the description thereof will be omitted as appropriate.

[0008] [First Embodiment] In this embodiment, an example of an object processing method and an object processing apparatus will be described.

[0009] (Object Processing Method) FIG. 1 is a schematic diagram for explaining an example of an object processing method. As shown in FIG. 1, the object processing method includes a pattern forming step S1, a carbon film forming step S2, a carbon film removing step S3, and a cleaning step S4.

[0010] The pattern forming step S1 forms a pattern on the surface of the object. The object is, for example, a master. The master has a light-transmissive substrate such as a quartz glass substrate, and examples thereof include a template used in a pattern forming method using nanoimprint lithography (NIL) or a photomask used in photolithography. The photomask is one in which a pattern is formed by a light-shielding film containing a metal such as chromium or a halftone film on a light-transmissive substrate such as quartz glass. Examples of general templates include a master template serving as a mold and a replica template manufactured using the master template. Note that the object is not limited to a master such as a template, and the object may be, for example, a semiconductor substrate on which a circuit pattern is formed on a semiconductor wafer such as a silicon wafer. Hereinafter, an example in which a replica template is used for the object will be described, but the present invention is not limited thereto.

[0011] In the pattern formation method using NIL, a template is pressed onto an imprint material layer such as an ultraviolet curable resin provided on an object, and light is irradiated to cure the imprint material layer, thereby transferring the pattern to the imprint material layer.

[0012] FIG. 2 is a perspective schematic view for explaining an example of the structure of the template. As shown in FIG. 2, the template has a base material 111 including a surface MS called a mesa and a groove CO. The base material 111 is, for example, a quartz glass substrate. Therefore, the base material 111 contains silicon and oxygen. FIG. 3 is a cross-sectional schematic view for explaining an example of the structure of the template, and shows a part of an X-Z cross-section including the X-axis of the base material 111 and the Z-axis orthogonal to the X-axis and the Y-axis at the line segment X1-X2 shown in FIG. 2.

[0013] FIG. 4 is a top surface schematic view for explaining an example of the layout of the surface MS, and shows a part of the X-Y plane of the base material 111. FIG. 5 is a cross-sectional schematic view for explaining an example of the layout of the surface MS, and shows a part of the X-Z cross-section of the base material 111 at the line segment Y1-Y2 shown in FIG. 4.

[0014] The surface MS includes an imprint pattern 112. The imprint pattern 112 is a pattern transferred by the pattern formation method using NIL. The number, position, and shape of the imprint pattern 112 are not particularly limited. As an example, FIGS. 4 and 5 show an imprint pattern 112 composed of a line and space including a convex portion 112a having an upper surface TS and a concave portion 112b having a lower surface BS. The imprint pattern 112 further has a side surface (also referred to as a line edge) LE of the convex portion 112a between the upper surface TS and the lower surface BS.

[0015] The carbon film forming step S2 and the carbon film removing step S3 are repeatedly performed alternately and seamlessly in the processing chamber I of the object processing apparatus 100 described later, thereby reducing the roughness of the surface of the object and improving the quality of the pattern. The carbon film forming step S2 and the carbon film removing step S3 are performed without exposing the object to the atmosphere using one object processing apparatus 100.

[0016] Figures 6, 7, and 8 are schematic diagrams illustrating the changes in the object caused by the carbon film formation process S2 and the carbon film removal process S3.

[0017] Figure 6 shows an example of a side LE of the template before the carbon film formation step S2 and carbon film removal step S3. As shown in Figure 6, the side LE may have irregularities on its surface.

[0018] Next, in the carbon film formation step S2, a film 113 is formed on the surface of the substrate 111, as shown in Figure 7. The film 113 is formed thicker in the recesses on the surface of the substrate 111, as shown in Figure 7. The film 113 contains, for example, carbon (C). The film 113 may also contain compounds such as silicon carbide. The film 113 may be an amorphous carbon film such as a diamond-like carbon (DLC) film. The film 113 is formed, for example, by implanting and depositing ions such as carbon ions on the surface of the substrate 111.

[0019] The film 113 is also formed on the side surface LE. By forming the film 113, the substrate 111 is partially altered on the side surface LE, and a mixed layer 120 is formed. The mixed layer 120 is formed, for example, by implanting carbon ions into the substrate 111. When carbon ions are implanted into the substrate 111, the Si-O bonds in the silicon dioxide of the quartz glass are broken, and silicon and carbon bond to form Si-C bonds. Alternatively, carbon further bonds with oxygen to form Si-OC bonds. Therefore, the mixed layer 120 contains carbon, silicon, and oxygen.

[0020] Next, the film 113 is removed in the carbon film removal step S3, as shown in Figure 8. The film 113 can be removed using plasma generated from a gas containing, for example, oxygen, nitrogen, and at least one of a noble gas.

[0021] Furthermore, the carbon film removal step S3 removes at least a portion of the mixed layer 120. This reduces the roughness of the side LE. The carbon film formation step S2 and the carbon film removal step S3 are repeated, for example, until the surface roughness of the substrate 111 reaches a desired value.

[0022] (Object processing device) Next, an example of the configuration of the object processing device 100 will be described below. Figure 9 is a schematic diagram showing an example of the configuration of the object processing device 100. The object processing device 100 comprises a control device A, a gas supply source B1, an AC power supply C, a DC power supply D, an elevator E, a transport port G, a vacuum exhaust mechanism H, a processing chamber I, and a stage J.

[0023] Control device A controls the operation of each component within the object processing device 100. Control device A can control, for example, at least one of the following: the supply of gas from the gas supply source B1, the supply of AC voltage from the AC power supply C to the processing chamber I, the supply of DC voltage from the DC power supply D to the processing chamber I, the lifting and lowering of the object F by the elevator E, the transport of the object F between the processing chamber I and the outside via the transport port G, and the exhaust of the processing chamber I by the vacuum exhaust mechanism H.

[0024] Control device A may have hardware such as a processor or personal computer. The hardware may be directly or indirectly connected to each of the following: control device A, gas supply source B1, AC power supply C, DC power supply D, elevator E, transport port G, and vacuum exhaust mechanism H, and each operation can be controlled by sending and receiving information with each of them. Alternatively, each operation may be stored as an operation program on a computer-readable recording medium such as memory, and each operation may be executed by appropriately reading the operation program stored on the recording medium by the hardware.

[0025] Gas source B1 can supply film-forming gas and etching gas to processing chamber I, respectively. Film-forming gases include carbon compounds such as methane (CH4), acetylene (C2H2), or toluene (C6H5CH3). Etching gases include oxygen or fluorine, for example. Examples of etching gases containing fluorine include carbon fluorides such as tetrafluoromethane (CF4) and trifluoromethane (CHF3). Gas source B1 may also supply a purge gas to processing chamber I. Purge gases include nitrogen, for example.

[0026] The gas supply source B1 is connected to the processing chamber I and the control device A. The gas supply source B1 comprises a cylinder cabinet B1a, a mass flow controller B1b, and a gas port B1c. Multiple cylinder cabinets B1a, mass flow controllers B1b, and gas ports B1c are provided, corresponding to the number of gases to be supplied. For example, if the gas supply source B1 supplies a film-forming gas, an etching gas, and a purging gas, then three or more cylinder cabinets B1a, mass flow controllers B1b, and gas ports B1c are provided.

[0027] AC power supply C is connected to processing chamber I and control device A. AC power supply C can supply AC voltage to processing chamber I using electrode C1 provided in processing chamber I. The AC voltage has a frequency of, for example, 13.56 MHz or higher. AC power supply C, together with gas supply source B1, forms a plasma / ion supply source.

[0028] The DC power supply D is connected to the processing chamber I and the control device A. The DC power supply D can supply a DC voltage to the processing chamber I using electrodes J2 embedded in the stage J. Together with the gas supply source B1, the DC power supply D forms a plasma / ion supply source.

[0029] Elevator E can raise and lower object F using lift E1. Elevator E is connected to control device A. The raising and lowering of elevator E is controlled by control device A.

[0030] The transport port G is provided in the housing that forms the processing chamber I. The transport port G connects or disconnects the processing chamber I from the outside by being opened or closed. The opening and closing of the transport port G is controlled by the control device A.

[0031] The vacuum evacuation mechanism H is connected to the processing chamber I. The vacuum evacuation mechanism H can discharge gas from the processing chamber I.

[0032] Processing chamber I is a space in which processing such as carbon film formation and carbon film removal is performed on the object F. The pressure in processing chamber I can be adjusted to a predetermined pressure by continuously evacuating processing chamber I using the vacuum exhaust mechanism H.

[0033] Stage J is located within processing chamber I. Stage J has a surface J1 on which the object F is placed.

[0034] Next, an example of an object processing method using the object processing device 100 will be explained with reference to Figure 10. Figure 10 is a timing chart for illustrating an example of an object processing method.

[0035] An example of a material processing method, as shown in Figure 10, includes a loading step SA, a film formation step SB, an etching step SC, and an unloading step SD.

[0036] In the loading step SA, the transport port G is opened (transport port G: OPEN), the object F is transported into the processing room I from the transport unit located outside the processing room I, and the transport port G is closed (transport port G: CLOSE).

[0037] Figure 11 is a schematic diagram showing an example of the configuration of the transport unit. The transport unit includes a sample shelf K, a transport robot L, a vacuum reserve chamber M, and a vacuum robot N.

[0038] To transport the object F into the processing chamber I, the object F is placed on the sample shelf K. The processing recipe for the object F is also set using the control device A. This processing recipe includes data indicating process conditions for each of the film deposition step SB and etching step SC, such as the type of supply gas, supply gas flow rate, processing chamber pressure, voltage application conditions, and step time. This data may be stored, for example, in the memory provided in the control device A.

[0039] When control device A instructs the start of a step, object F is transported from sample shelf K to vacuum pre-chamber M by transport robot L. From vacuum pre-chamber M, object F is brought into processing chamber I via transport port G by vacuum robot N under a constant vacuum atmosphere (object F: IN).

[0040] The object F, brought into processing room I, is lifted from the robot arm of the vacuum robot N by the elevator E shown in Figure 9. The robot arm is then returned to its original position, the transport port G is closed, and the object F is lowered onto the surface J1 of stage J by the elevator E and placed there.

[0041] Next, based on the processing recipe set by control device A, the film deposition step SB and the etching step SC are seamlessly and alternately switched and repeated within processing chamber I. The number of repetitions is set appropriately according to the processing recipe.

[0042] In the film deposition step SB, the introduction of purge gas from gas supply source B1 to processing chamber I begins (purge gas: ON). This adjusts the atmosphere inside processing chamber I. During this time, the introduction of film deposition gas and etching gas is stopped (film deposition gas, etching gas: OFF). Next, the introduction of purge gas into processing chamber I is stopped (purge gas: OFF), and the introduction of film deposition gas into processing chamber I begins (film deposition gas: ON). During this time, the introduction of etching gas is stopped (etching gas: OFF).

[0043] While the film-forming gas is being introduced into the processing chamber I, a DC voltage is supplied from the DC power supply D. This generates a first plasma, such as carbon plasma, from the film-forming gas. The potential of the DC voltage is switched sequentially over time from positive potential (DC power supply D:+), zero potential (DC power supply D:0), to negative potential ((DC power supply D:-)). The first plasma is generated, for example, when the potential is positive, and deposited on the surface of the object F when the potential is negative, forming the film 113 shown in Figure 7. The switching between positive potential, zero potential (no potential), and negative potential is repeated. The number of repetitions is set appropriately according to parameters such as the thickness of the film 113 to be formed. The potential of the DC voltage varies, for example, within a range of ±5kV and at a frequency of 3 to 5kHz. The supply time of the DC voltage per cycle is, for example, 60 seconds or less. The flow rate of the film-forming gas is, for example, 10 sccm or more. The pressure in the processing chamber I is, for example, 0.4 Pa or less. Since the deposition step SB may form a thin film 113 with a thickness of, for example, 5 nm or less, it is important to control the flow rate of the deposition gas and the sequence of DC voltage application in order to control the deposition rate.

[0044] After the formation of a film 113 with the desired thickness, the DC voltage supply is stopped, and the film deposition gas supply is stopped (film deposition gas: OFF). Next, the introduction of purge gas from gas supply source B1 into processing chamber I is started (purge gas: ON). The atmosphere inside processing chamber I is adjusted by the purge gas. At this time, the supply of film deposition gas and etching gas remains stopped (film deposition gas, etching gas: OFF). Subsequently, the introduction of purge gas from gas supply source B1 is stopped (purge gas: OFF).

[0045] In the etching step SC, the introduction of the etching gas from gas supply source B1 into processing chamber I is started while the introduction of the deposition gas and purge gas is stopped (deposition gas, purge gas: OFF).

[0046] While the etching gas is being introduced into the processing chamber I, the AC voltage is supplied from the AC power supply C (AC power supply C: ON). This generates a second plasma, such as oxygen plasma, from the etching gas. The second plasma removes the film 113 and mixed layer 120 from the surface of the object F, as shown in Figure 8. The AC voltage supply time per cycle is longer than the DC voltage supply time per cycle and is set appropriately according to parameters such as the thickness of the film 113 to be removed. For example, the AC voltage supply time per cycle is 120 seconds or more. The etching gas flow rate is, for example, 30 sccm or more. The pressure in the processing chamber I is, for example, 2.7 Pa or less. After the film 113 is removed, the AC voltage supply is stopped (AC power supply C: OFF), and the introduction of the etching gas is stopped (etching gas: OFF).

[0047] The second plasma is preferably an oxygen plasma. The oxygen plasma can remove the film 113 and the mixed layer 120 while suppressing the removal of the substrate 111.

[0048] The film deposition step SB and the etching step SC are seamlessly and alternately switched within the processing chamber I. The switching between the film deposition step SB and the etching step SC is repeated. The number of repetitions is set appropriately according to parameters such as the surface roughness of the object F.

[0049] In the unloading step SD, the transport port G is opened (transport port G: OPEN), and in the transport section shown in Figure 11, the object F is unloaded from the transport port G by the vacuum robot N (object F: OUT), and the transport port G is closed (transport port G: CLOSE). The object F is returned to the sample shelf K by the transport robot L via the vacuum reserve chamber M and unloaded outside the object processing device 100.

[0050] The surface roughness of the object F can be reduced by performing the film deposition step SB and the etching step SC. For example, if the film deposition step SB and etching step SC are performed once each, the surface roughness of the object F can be reduced to, for example, 85% of its initial state. Furthermore, if the film deposition step SB and etching step SC are repeated three or more times, the surface roughness of the object F can be reduced to, for example, 74% of its initial state. In addition, the variation in pattern dimensions at this time can be reduced to 1 nm or less.

[0051] Subsequently, the surface of object F is cleaned in cleaning step S4. This concludes the explanation of the object processing method.

[0052] As described above, in the object processing method of the first embodiment, carbon film formation and carbon film removal can be seamlessly switched alternately within the processing chamber I using a single object processing apparatus 100. This allows the object F to be processed without being exposed to the atmosphere, and changes in the amount of film 113 formed and removed in response to oxidation and moisture absorption on the surface of the object F can be suppressed. Therefore, the surface roughness of the object can be reduced without significantly changing the processing dimensions.

[0053] [Second Embodiment] The objects that can be processed using the object processing device 100 are not limited to templates. Figures 12A and 12B are schematic cross-sectional diagrams illustrating examples of processing methods for other examples of objects.

[0054] Figure 12A shows a portion of the object 200 as it has been brought into processing chamber I. The object 200 is, for example, a photomask, and as shown in Figure 12A, it has a substrate 201, a phase-shift film 202, a metal film 211, and an oxide film 212.

[0055] The substrate 201 is, for example, quartz glass and contains silicon and oxygen.

[0056] The phase-shift film 202 is, for example, a silicon nitride film containing silicon and nitrogen. The phase-shift film 202 is provided on the substrate 201. The phase-shift film 202 is a film with a lower transmittance of exposure light than the quartz glass that makes up the substrate 201, and has the property of inverting the phase of transmitted light. A photomask having the phase-shift film 202 is called a phase-shift mask.

[0057] The metal film 211 is provided on the phase-shift film 202. The metal film 211 contains, for example, chromium. The metal film 211 is provided for processing the phase-shift film 202 by etching.

[0058] The oxide film 212 is provided on the metal film 211. The oxide film 212 is, for example, a silicon oxide film, and contains silicon and oxygen. The oxide film 212 is provided for processing the metal film 211 by etching.

[0059] The oxide film 212 in the object 200 shown in Figure 12 has a pattern that includes a convex portion 213a having an upper surface TS, and a recess 213b where the upper surface of the metal film 211 is exposed as the lower surface BS. The oxide film 212 further has a side surface LE of the convex portion 213a between the upper surface TS and the lower surface BS.

[0060] The object 200 shown in Figure 12A is formed by, for example, the following procedure. First, a phase-shift film 202 is formed on the substrate 201, a metal film 211 is formed on the phase-shift film 202, an oxide film 212 is formed on the metal film 211, and a resist is formed on the oxide film 212. Next, a pattern is developed on the resist, and the resist with the developed pattern is used as a processing mask to partially etch the oxide film 212 and process the pattern. At this time, the roughness of the resist is transferred to the oxide film 212. After that, the object 200 is formed by removing the resist remaining on the oxide film 212.

[0061] By seamlessly and alternately repeating the carbon film formation step S2 and the carbon film removal step S3 in the processing chamber I using the object processing apparatus 100, similar to the first embodiment, on the object 200 shown in Figure 12A, roughness such as irregularities on the surface of the side LE can be reduced. The rest of the explanation of the carbon film formation step S2 and the carbon film removal step S3 is the same as the explanation of the carbon film formation step S2 and the carbon film removal step S3 in the first embodiment, so the explanation of the first embodiment can be appropriately referenced.

[0062] After performing the same processing as in the first embodiment described above, as shown in Figure 12B, the metal film 211 is etched using the oxide film 212 with reduced roughness as a mask, and then the phase shift film 202 is processed using the metal film 211 as a mask to transfer the pattern to the phase shift film 202. After that, the photomask is manufactured by removing the metal film 211.

[0063] The second embodiment can be combined with other embodiments as appropriate.

[0064] [Third Embodiment] The configuration of the object processing apparatus 100 is not limited to the configuration shown in Figure 9. Figure 13 is a schematic diagram showing another example configuration of the object processing apparatus 100. The object processing apparatus 100 shown in Figure 13, like the object processing apparatus 100 shown in Figure 9, comprises a control device A, a gas supply source B1, an AC power supply C, a DC power supply D, an elevator E, a transport port G, a vacuum exhaust mechanism H, a processing chamber I, and a stage J. The description of these components can be appropriately referred to in the description of the first embodiment. The following description will explain the parts that differ from the object processing apparatus 100 shown in Figure 9, and the description of the first embodiment can be appropriately referred to in the description of other parts.

[0065] The object processing apparatus 100 shown in Figure 13 further comprises a remote plasma source B2. The remote plasma source B2 is connected to a gas supply source B1 and generates a remote plasma, such as oxygen plasma, from etching gas supplied from a cylinder cabinet B1a via a mass flow controller B1b and a gas port B1c. By opening a supply gate B2a, the remote plasma can be supplied to the processing chamber I. The supply gate B2a may be a valve. The remote plasma source B2 is connected to a control device A. The control device A controls the plasma supply operation from the remote plasma source B2. The remote plasma source B2, together with the gas supply source B1, forms a plasma / ion supply source.

[0066] Similar to the first embodiment, the roughness of the surface of the side LE can be reduced by alternately repeating the carbon film formation step S2 and the carbon film removal step S3 using the object processing apparatus 100 shown in Figure 13. In addition, in the carbon film removal step S3, the film 113 can be removed using a remote plasma such as oxygen plasma generated by the remote plasma source B2.

[0067] Figure 14 is a timing chart illustrating an example of the object processing method. The following describes the differences from the first embodiment; for other parts, the description of the first embodiment can be appropriately referenced. Also, for convenience, Figure 14 omits the timing charts for the elevator E, object F, and transport port G, but they are assumed to operate in the same manner as in the first embodiment.

[0068] The deposition step SB closes the supply gate B2a (supply gate B2a: CLOSE) and stops the operation of the remote plasma source B2 (remote plasma source B2: OFF).

[0069] In the etching step SC, the introduction of the deposition gas and purge gas is stopped (deposition gas, purge gas: OFF), the supply gate B2a is opened (supply gate B2a: OPEN), and then the operation of the remote plasma source B2 is started (remote plasma source B2: ON). Furthermore, the introduction of etching gas from the gas supply source B1 to the processing chamber I is started (etching gas: ON), and the supply of AC voltage is started (AC power supply C: ON). This generates a second plasma from the etching gas, and remote plasma is supplied from the remote plasma source B2 to the processing chamber I. The film 113 and mixed layer 120 on the surface of the object F are removed by the second plasma and the remote plasma. After the removal of the film 113 and mixed layer 120, the supply of AC voltage is stopped (AC power supply C: OFF), and the introduction of etching gas is stopped (etching gas: OFF). Then, the operation of the remote plasma source B2 is stopped (remote plasma source B2: OFF), and then the supply gate B2a is closed (supply gate B2a: CLOSE). Thus, by making the supply time of the remote plasma longer than the supply time of the second plasma, the film 113 can be removed and the processing chamber I can be cleaned, which is preferable.

[0070] Furthermore, the film 113 may be removed using only the remote plasma generated by the remote plasma source B2, without providing an AC power supply C. The rest of the carbon film formation step S2 and carbon film removal step S3 are the same as the descriptions of the carbon film formation step S2 and carbon film removal step S3 in the first embodiment, so the description of the first embodiment can be appropriately referenced.

[0071] The third embodiment can be combined with other embodiments as appropriate.

[0072] [Fourth Embodiment] The configuration of the object processing apparatus 100 is not limited to the configuration shown in Figure 9. Figure 15 is a schematic diagram showing another example configuration of the object processing apparatus 100. The object processing apparatus 100 shown in Figure 15, like the object processing apparatus 100 shown in Figure 9, comprises a control device A, a gas supply source B1, an AC power supply C, a DC power supply D, an elevator E, a transport port G, a vacuum exhaust mechanism H, a processing chamber I, and a stage J. The description of these components can be appropriately referred to in the description of the first embodiment. The following description will explain the parts that differ from the object processing apparatus 100 shown in Figure 9, and the description of the first embodiment can be appropriately referred to in the description of other parts.

[0073] The object processing apparatus 100 shown in Figure 14 further comprises an arc ion source B3. The arc ion source B3 generates carbon ions from a solid carbon source such as a carbon rod by causing an arc discharge and can supply the carbon ions to the processing chamber I. The arc ion source B3 is connected to a gas supply source B1, and a carrier gas may be introduced from the cylinder cabinet B1a to the mass flow controller B1b. The carrier gas is, for example, a noble gas. By opening the supply gate B3a, carbon ions can be introduced from the arc ion source B3 to the processing chamber I. The supply gate B3a may be a valve. The arc ion source B3 is electrically connected to a control device A. The control device A controls the ion supply operation from the arc ion source B3.

[0074] Similar to the first embodiment, the roughness of the surface of the side LE can be reduced by alternately repeating the carbon film formation step S2 and the carbon film removal step S3 using the object processing apparatus 100 shown in Figure 15. In addition, in the carbon film formation step S2, the film 113 can be formed using carbon ions generated by the arc ion source B3.

[0075] Figure 16 is a timing chart illustrating an example of the object processing method. The following describes the differences from the first embodiment; for other parts, the description of the first embodiment can be appropriately referenced. Also, for convenience, Figure 16 omits the timing charts for the elevator E, object F, and transport port G, but they are assumed to operate in the same manner as in the first embodiment.

[0076] In the film deposition step SB, the introduction of purge gas from the gas supply source B1 to the processing chamber I begins (purge gas: ON). This adjusts the atmosphere inside the processing chamber I. During this time, the introduction of film deposition gas and etching gas is stopped (film deposition gas, etching gas: OFF). Also, the supply gate B3a is closed (supply gate B3a: CLOSE). Next, the introduction of purge gas into the processing chamber I is stopped (purge gas: OFF), and the introduction of film deposition gas into the processing chamber I begins (film deposition gas: ON). During this time, the introduction of etching gas is stopped (etching gas: OFF).

[0077] While the film-forming gas is being introduced into the processing chamber I, a DC voltage is supplied from the DC power supply D. This generates a first plasma from the film-forming gas. The first plasma is generated, for example, when the potential is positive, and deposited on the surface of the object F when the potential is negative, forming the film 113 shown in Figure 7. The switching between positive potential, zero potential (no potential), and negative potential is repeated.

[0078] While the film-forming gas is being introduced into processing chamber I, the arc ion source B3 is started (arc ion source B3: ON), and the supply gate B3a is opened (supply gate B3a: OPEN). This supplies carbon ions generated by the arc ion source B3 to processing chamber I. The carbon ions, along with the first plasma, are deposited on the surface of the object F, forming a film 113. After the formation of film 113, the supply gate B3a is closed (supply gate B3a: CLOSE), and then the supply of the film-forming gas is stopped (film-forming gas: OFF). By stopping the supply of the film-forming gas after closing the supply gate B3a, backflow of carbon ions into the gas supply source B1 can be suppressed.

[0079] The etching step SC closes the supply gate B3a (supply gate B3a: CLOSE) and stops the operation of the arc ion source B3 (arc ion source B3: OFF). However, the arc ion source B3 may remain in operation.

[0080] In addition, in the carbon film formation step S2, the film 113 may be formed using only carbon ions generated by the arc ion source B3 without providing a DC power supply D. Since the arc ion source B3 can supply even minute amounts of ions, the amount of ion deposition can be finely adjusted. The rest of the carbon film formation step S2 and carbon film removal step S3 are the same as the descriptions of the carbon film formation step S2 and carbon film removal step S3 in the first embodiment, so the description of the first embodiment can be appropriately referenced.

[0081] The fourth embodiment can be combined with other embodiments as appropriate. For example, the object processing apparatus 100 shown in Figure 9 may include both the remote plasma source B2 in the third embodiment and the arc ion source B3 in the fourth embodiment.

[0082] [Fifth Embodiment] In the object processing method using the object processing apparatus 100 shown in Figure 9, the surface of the object F may be cleaned before the carbon film formation step S2 and the carbon film removal step S3. Cleaning is performed by exposing the surface of the object F to plasma generated from a noble gas such as helium (He) or argon (Ar), oxygen, or nitrogen. The plasma used for cleaning can be generated, for example, from gas supplied from the cylinder cabinet B1a via a mass flow controller B1b and gas port B1c, by supplying an AC voltage to the processing chamber I from an AC power supply C.

[0083] Cleaning only needs to be performed before the first carbon film formation step S2, and does not need to be performed before the second or subsequent carbon film formation steps S2.

[0084] The fifth embodiment can be combined with other embodiments as appropriate.

[0085] [Sixth Embodiment] The object processing method using the object processing apparatus 100 shown in Figure 9 may be set using a processing recipe to measure the thickness of the film 113 formed in the carbon film formation step S2 and to determine the step time of the etching step SC in the carbon film removal step S3 according to the measured thickness.

[0086] A preferred method for measuring the thickness of the film 113 is one that can be measured without exposing the processing chamber I to the atmosphere. For example, a viewport can be formed in the housing I1 of the processing chamber I, light can be incident on the surface of the object F from the viewport, and the film thickness can be calculated by measuring the transmittance of the light. If the reflectance of light of the object F is high, the thickness of the film 113 can also be measured using light interference. The step time for etching conditions sufficient to remove the film 113 having the calculated thickness is determined by (T / S)(1+Over / 100)[s], for example, when the thickness of the film 113 is expressed by T[nm], the removal rate of the film 113 is expressed by S[nm / s], and the over-etching rate is expressed by Over[%].

[0087] The sixth embodiment can be combined with other embodiments as appropriate.

[0088] [Seventh Embodiment] The object processing method using the object processing apparatus 100 shown in Figure 9 may also involve performing the carbon film formation step S2 using a magnetic material.

[0089] Figure 17 is a schematic diagram illustrating an example of a carbon film formation process S2 using a magnetic material. Figure 17 shows a structure 102 having a tray 121 and a magnetic material 122. The structure 102 is transported in and out together with the object F using a transport unit.

[0090] The tray 121 is capable of holding the object F. The tray 121 can be formed using a resin material such as plastic. Preferably, the tray 121 is a dielectric material. Examples of dielectric materials include resins such as polyetheretherketone (PEEK). Preferably, the tray 121 is made of a material that has high heat resistance and excellent abrasion resistance and dimensional stability.

[0091] The magnetic material 122 is embedded in the tray 121 so as to be located beneath the object F and overlaps the housing portion of the object F in the Z-axis direction. The magnetic material 122 has a south pole region 122a facing the object F and a north pole region 122b on the opposite side of the object F. The magnetic material 122 has a single polarity in a direction parallel to the bottom surface 124 of the recess 123. The magnetic material 122 may be provided on the tray 121 and may be detachable from the tray 121. The magnetic material 122 is, for example, a ferromagnetic material. Examples of ferromagnetic materials include hard magnetic materials such as permanent magnets made from materials such as ferrite, samarium-cobalt alloy, neodymium, and iron-aluminum-silicon alloy. The magnetic material 122 may be embedded in the electrode J2.

[0092] In the carbon film formation process S2, as described above, a DC voltage is supplied to generate plasma from the film formation gas. At this time, magnetic field lines ML are formed by the magnetic material 122 in a direction intersecting the object F, from the south pole region 122a toward the north pole region 122b.

[0093] When generating plasma, it is preferable that the temperature of electrode J2 be adjusted, for example by a temperature control mechanism, so that the magnetic material 122 is below its Curie temperature. Permanent magnets containing rare earth elements such as neodymium are susceptible to heat. Since the plasma used in the film deposition process acts as a heat source, the properties of the magnetic material 122 can be maintained by controlling its temperature. For example, the Curie temperature of neodymium is approximately 330°C.

[0094] Figure 18 is a schematic diagram illustrating the behavior of cations P, such as carbon ions, in the carbon film formation process S2 when a magnetic material 122 is present. When a magnetic material 122 is present, the cations P are accelerated in response to the magnetic field based on magnetic field lines ML. A Lorentz force acts on the accelerated cations P. This Lorentz force changes the motion of the cations P to helical motion according to Fleming's left-hand rule. That is, as shown in Figure 18, the cations P perform helical motion, moving in a helical manner in the direction intersecting the surface of the electrode J2. In this case, the amount of sliding of the cations P can be increased compared to linear motion, and therefore the amount of deposition of cations P on the side surface LE relative to the upper surface TS can be increased. Note that the angular velocity of the helical motion is proportional to the magnetic flux density of the magnetic material, so the higher the magnetic flux density, the greater the helical motion and the greater the amount of sliding of the cations P compared to linear motion.

[0095] The seventh embodiment can be combined with other embodiments as appropriate.

[0096] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0097] 100...Object processing apparatus, 102...Structure, 111...Substrate, 112...Imprint pattern, 112a...Convex part, 112b...Concave part, 113...Film, 120...Mixed layer, 121...Tray, 122...Magnetic material, 122a...South pole region, 122b...North pole region, 123...Concave part, 124...Bottom surface, 200...Object, 201...Substrate, 202...Phase shift film, 211...Metal film, 212...Mask film, 213a...Convex part, 213b...Concave part, A...Control device, B1...Gas supply source, B1a...Cylinder cabinet, B1b...Mass flow controller, B1c...Gas port, B2...Remote plasma source, B2a...Supply gate, B3...A - Ion source, B3a... Supply gate, BS... Bottom, C... AC power supply, C1... Electrode, CO... Groove, D... DC power supply, E... Elevator, E1... Lift, F... Object, G... Transport port, H... Vacuum exhaust mechanism, I... Processing chamber, I1... Housing, J... Stage, J1... Surface, J2... Electrode, K... Sample shelf, L... Transport robot, LE... Side, M... Vacuum reserve chamber, ML... Magnetic field lines, MS... Surface, N... Vacuum robot, P... Cation, SA... Loading step, SB... Film formation step, SC... Etching step, SD... Loading step, S1... Pattern formation process, S2... Carbon film formation process, S3... Carbon film removal process, S4... Cleaning process, TS... Top.

Claims

1. The first step is to transport the object into the processing room, A second step of generating at least one of a first ion containing carbon and a first plasma containing carbon, and using at least one of the first ion and the first plasma to form a carbon-containing film on the object, The method comprises a third step of generating a second plasma from a second gas containing at least one selected from the group consisting of oxygen, nitrogen, and noble gases, and removing the film by a reaction between the second plasma and the film, In the processing chamber, the second step and the third step are seamlessly and alternately switched. A method for processing an object, comprising the second step of generating the first ions from a carbon source by arc discharge, introducing the first ions into the processing chamber, forming the film on the object using the first ions, and then stopping the introduction of the first ions.

2. The object processing method according to claim 1, further comprising the second step of introducing a first gas containing carbon into the processing chamber, supplying a first voltage to the processing chamber to generate a first plasma from the first gas, forming the film on the object using the first plasma, and then stopping the supply of the first voltage and the introduction of the first gas.

3. The object processing method according to claim 1, further comprising the third step of introducing the second gas into the processing chamber and supplying a second voltage to the processing chamber to generate a second plasma from the second gas, removing the film by a chemical reaction between the second plasma and the film, and then stopping the supply of the second voltage and the introduction of the second gas.

4. The object processing method according to claim 1, further comprising the third step of introducing the second plasma generated from the second gas in a remote plasma source into the processing chamber, removing the film by a chemical reaction between the second plasma and the film, and then stopping the introduction of the second plasma.

5. The object processing method according to claim 2, wherein the potential of the first voltage is switched in the order of positive potential, zero potential, and negative potential.

6. The object treatment method according to claim 1, wherein the film is an amorphous carbon film.

7. A first step of transporting the object into the processing room, A second step of generating at least one of a first ion containing carbon and a first plasma containing carbon, and using at least one of the first ion and the first plasma to form a carbon-containing film on the object, The method comprises a third step of generating a second plasma from a second gas containing at least one selected from the group consisting of oxygen, nitrogen, and noble gases, and removing the film by a reaction between the second plasma and the film, In the processing chamber, the second step and the third step are seamlessly and alternately switched. The second step is a method for processing an object, wherein a ferromagnetic material is placed below the object so as to have a single polarity in a direction substantially parallel to the object.

8. Processing room and A first source that generates at least one of a first ion containing carbon and a first plasma containing carbon, A second source for generating a second plasma from a second gas containing at least one selected from the group consisting of oxygen, nitrogen, and noble gases, The processing chamber includes a transport unit for transporting objects, A control device that controls the first supply source and the second supply source to seamlessly switch between a first operation, in which a carbon-containing film is formed on an object placed in the processing chamber using at least one of the first ions and the first plasma, and a second operation, in which the film is removed by a chemical reaction between the second plasma and the film, within the processing chamber. It is equipped with, The object processing apparatus has an arc ion source that generates the first ions by arc discharge and introduces the first ions into the processing chamber.

9. A first power supply provided in the first supply source for supplying a first voltage to the processing chamber, A second power supply is provided in the second supply source for supplying a second voltage to the processing chamber, A gas supply source for selectively introducing a first gas containing carbon and the second gas into the processing chamber, Furthermore, it is equipped with, The first operation includes introducing the first gas from the gas supply source into the processing chamber, supplying the first voltage from the first power source to the processing chamber to generate the first ions from the first gas, and then stopping the supply of the first voltage and the introduction of the first gas. The object processing apparatus according to claim 8, wherein the second operation includes introducing the second gas from the gas supply source into the processing chamber, supplying a second voltage from the second power source to the processing chamber to generate the second plasma from the second gas, and then stopping the supply of the second voltage and the introduction of the second gas.

10. The object processing apparatus according to claim 8, wherein the second supply source has a remote plasma source that generates the second plasma from the second gas and introduces the second plasma into the processing chamber.

11. A processing chamber, A first source that generates at least one of a first ion containing carbon and a first plasma containing carbon, A second source for generating a second plasma from a second gas containing at least one selected from the group consisting of oxygen, nitrogen, and noble gases, The processing chamber includes a transport unit for transporting objects, A control device that controls the first supply source and the second supply source to seamlessly switch between a first operation, in which a carbon-containing film is formed on an object placed in the processing chamber using at least one of the first ions and the first plasma, and a second operation, in which the film is removed by a chemical reaction between the second plasma and the film, within the processing chamber. It is equipped with, The object processing apparatus is characterized in that the first operation is performed by arranging a ferromagnetic material below the object so as to have a single polarity in a direction substantially parallel to the object.

12. The first step is to transport the object into the processing room, A second step of generating at least one of a first ion containing carbon and a first plasma containing carbon, and using at least one of the first ion and the first plasma to form a carbon-containing film on the object, The method comprises a third step of generating a second plasma from a second gas containing at least one selected from the group consisting of oxygen, nitrogen, and noble gases, and removing the film by a reaction between the second plasma and the film, A method for manufacturing a master plate, comprising seamlessly switching between the second step and the third step in the processing chamber.

13. The method for manufacturing a master plate according to claim 12, wherein the master plate is a photomask or a template.

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