Method for calculating the performance of a magnetic element having a ferromagnetic layer exchanged-coupled to an antiferromagnetic layer.

JP7833483B2Active Publication Date: 2026-03-19ALLEGRO MICROSYSTEMS LLC
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-04-04
Publication Date
2026-03-19

AI Technical Summary

Technical Problem

Existing models fail to accurately predict the thermal stability and degradation of magnetic devices under external magnetic fields and high temperatures due to neglecting angular fluctuations and uniaxial anisotropy orientations in polycrystalline antiferromagnetic layers, leading to inaccuracies in estimating the lifetime and performance of magnetic elements.

Method used

A method using a self-consistent recursive procedure and a polycrystalline model to calculate the exchange bias magnetic field, considering the particle volume distribution and uniaxial anisotropy orientations, predicts the thermal stability and degradation of magnetic elements by accounting for angular fluctuations and external conditions.

Benefits of technology

Enables precise prediction of magnetic element performance under various exposure conditions, extending beyond short-term tests to estimate long-term lifetime and performance shifts, improving the evaluation of magnetic devices like MRAMs and magnetic field sensors.

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Abstract

A method is presented to determine the degradation dependence of electrical and magnetic variables in TMR magnetic field sensors under accelerated life testing. The present disclosure relates to a method for calculating the performance of a magnetic element (2) having a reference bilayer (244) comprising a ferromagnetic reference layer (21) having a reference magnetization (210) and an antiferromagnetic layer (24) that pins the reference magnetization (210) by exchange bias, the antiferromagnetic layer (24) comprising a metallic polycrystalline material having a grain volume distribution. The method includes: calculating the performance of a magnetic element (2) having a reference magnetization (210) and an antiferromagnetic layer (244) that pins the reference magnetization (210) by exchange bias, the antiferromagnetic layer (24) comprising a metallic polycrystalline material having a grain volume distribution. ex ) as a function of temperature; The measured exchange bias magnetic field (H ex ) with a particle volume distribution function; Calculating the in-plane variation in the orientation of the reference magnetization (210) as a function of the orientation of the exposed magnetic field (H); and calculating the exchange bias magnetic field (H ex ) and Equipped with.
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Citation Information

Patent Citations

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  • Magnetic field analysis device, analysis method, and program

    WO2019171660A1