Film deposition method and film deposition apparatus

Abstract

To provide a technique capable of preventing underlayer damage and forming a carbon film having excellent adhesion.SOLUTION: A deposition method according to one embodiment of the present invention includes the stage (a) for forming a seed layer on a substrate and the stage (b) for forming a carbon film on the seed layer. The stage (a) includes: the step for supplying an aminosilane-based gas to the substrate to form a Si-H bond on a surface of the substrate; and the step for supplying a boron-containing gas to the substrate to form a B-H bond on the surface having the Si-H bond formed thereon.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This disclosure relates to a film deposition method and a film deposition apparatus. [Background technology]

[0002] A technique is known in which a hydrocarbon-based carbon source gas and a thermal decomposition temperature-lowering gas containing halogen elements are introduced into a processing chamber, and a carbon film is formed at low temperatures by thermal CVD (chemical vapor deposition) (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2014-033186 [Patent Document 2] Japanese Patent Publication No. 2017-210640 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure provides a technology that can suppress substrate damage and form a carbon film with good adhesion. [Means for solving the problem]

[0005] A film-forming method according to one aspect of the present disclosure comprises (a) a step of forming a seed layer on a substrate, and (b) a step of forming a carbon film on the seed layer, wherein step (a) includes the steps of supplying an aminosilane gas to the substrate to form Si-H bonds on the surface of the substrate, and supplying a boron-containing gas to the substrate to form BH bonds on the surface on which the Si-H bonds have been formed. fruit , Step (b) includes the steps of supplying a carbon-containing gas and a halogen gas to the substrate to form the carbon film on the seed layer, and supplying a gas that reacts with the halogen constituting the halogen gas to reduce the amount of halogen contained in the carbon film. . [Effects of the Invention]

[0006] According to the present disclosure, it is possible to suppress substrate damage and form a carbon film with good adhesion.

Brief Description of the Drawings

[0007] [Figure 1] Schematic cross-sectional view showing a film forming apparatus according to an embodiment [Figure 2] Flowchart showing a method for forming a carbon film according to an embodiment [Figure 3] Cross-sectional view showing a step of forming a seed layer according to an embodiment [Figure 4] Cross-sectional view showing a step of forming a carbon film according to an embodiment [Figure 5] Diagram showing evaluation results of substrate damage and adhesion [Figure 6] Diagram showing measurement results of the XPS spectrum of a carbon film

Embodiments for Carrying Out the Invention

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] 〔Regarding the seed layer when forming a carbon film on a substrate〕 When using a carbon-containing gas to which a pyrolysis temperature-lowering gas is added, a carbon film can be formed on a substrate at a low temperature (for example, 390°C to 450°C). In this case, in order to form a carbon film with good adhesion to the substrate while suppressing substrate damage, a boron nitride (BN) film is formed on the substrate and then the carbon film is formed.

[0010] The BN film has the property of being highly resistant to etching but difficult to remove. Therefore, there is a need for a technology that can suppress substrate damage and form a carbon film with good adhesion without using the BN film.

[0011] Hereinafter, an example of a film forming apparatus and a film forming method that can suppress substrate damage and form a carbon film with good adhesion will be described.

[0012] 〔Film Forming Apparatus〕 Referring to FIG. 1, the film forming apparatus according to the embodiment will be described. As shown in FIG. 1, the film forming apparatus 100 is configured as a vertical batch type film forming apparatus, and includes a cylindrical outer wall 101 with a ceiling and a cylindrical inner wall 102 provided inside the outer wall 101. The outer wall 101 and the inner wall 102 are made of, for example, quartz, and the inner region of the inner wall 102 serves as a processing chamber S for collectively processing a plurality of substrates W. The substrate W is, for example, a semiconductor wafer.

[0013] The outer wall 101 and the inner wall 102 are separated from each other along the horizontal direction while separating the annular space 104, and are joined to the base material 105 at their respective lower ends. The upper end of the inner wall 102 is separated from the ceiling portion of the outer wall 101, and the upper part of the processing chamber S is communicated with the annular space 104. The annular space 104 communicated with the upper part of the processing chamber S serves as an exhaust passage. The gas supplied to and diffused in the processing chamber S flows from below the processing chamber S to above the processing chamber S and is sucked into the annular space 104. An exhaust pipe 106 is connected to, for example, the lower end of the annular space 104, and the exhaust pipe 106 is connected to an exhaust device 107. The exhaust device 107 includes a vacuum pump, an exhaust valve, etc., evacuates the processing chamber S, and adjusts the pressure inside the processing chamber S to an appropriate pressure for processing.

[0014] A heating device 108 is provided outside the outer wall 101 so as to surround the periphery of the processing chamber S. The heating device 108 adjusts the temperature inside the processing chamber S to an appropriate temperature for processing and collectively heats a plurality of substrates W.

[0015] The lower part of the processing chamber S communicates with an opening 109 provided in the base material 105. A manifold 110, for example, formed in a cylindrical shape from stainless steel, is connected to the opening 109 via a sealing member 111 such as an O-ring. The lower end of the manifold 110 is open, and a boat 112 is inserted into the processing chamber S through this opening. The boat 112 is made of, for example, quartz and has a plurality of support columns 113. Grooves (not shown) are formed in the support columns 113, and these grooves support multiple substrates to be processed at once. As a result, the boat 112 can hold multiple substrates W (for example, 50 to 150) in multiple layers. When the boat 112 with multiple substrates W on it is inserted into the processing chamber S, multiple substrates W can be accommodated inside the processing chamber S.

[0016] The boat 112 is placed on a table 115 via a quartz insulation tube 114. The table 115 is supported on a rotating shaft 117 that passes through a lid 116. The lid 116 opens and closes the opening at the lower end of the manifold 110. The lid 116 is made of, for example, stainless steel. A magnetic fluid seal 118 is provided at the penetration of the lid 116, supporting the rotating shaft 117 rotatably while providing an airtight seal. A sealing member 119, for example, an O-ring, is interposed between the periphery of the lid 116 and the lower end of the manifold 110 to maintain the sealing performance inside the processing chamber S. The rotating shaft 117 is attached to the tip of an arm 120 supported by a lifting mechanism (not shown), such as a boat elevator. As a result, the boat 112 and the lid 116 are raised and lowered vertically as a single unit to be inserted into and removed from the processing chamber S.

[0017] The film deposition apparatus 100 has a gas supply unit 130 that supplies a processing gas to the inside of the processing chamber S. The gas supply unit 130 includes a carbon-containing gas supply source 131a, a thermal decomposition temperature lowering gas supply source 131b, a halogen reaction gas supply source 131c, an inert gas supply source 131d, a first seed gas supply source 131e, and a second seed gas supply source 131f.

[0018] The carbon-containing gas supply source 131a is connected to the gas supply port 134a via a flow controller (MFC) 132a and a solenoid valve 133a. The gas supply port 134a is provided so as to penetrate the side wall of the manifold 110 along the horizontal direction, and diffuses the supplied gas into the processing chamber S above the manifold 110.

[0019] The carbon-containing gas supplied from the carbon-containing gas supply source 131a is a gas for forming a carbon film by low-pressure CVD (chemical vapor deposition), and various gases can be used as long as they contain carbon. For example, hydrocarbon-based carbon source gas may be used.

[0020] Examples of hydrocarbon-based carbon source gas include C n H 2n+2 C m H 2m C m H 2m-2 gases containing hydrocarbons represented by at least one of the molecular formulas (where n is a natural number of 1 or more and m is a natural number of 2 or more).

[0021] In addition, examples of hydrocarbon-based carbon source gas include benzene gas (C6H6) which may be included.

[0022] Examples of hydrocarbons represented by the molecular formula C n H 2n+2 include methane gas (CH4) ethane gas (C2H6) propane gas (C3H8) butane gas (C4H 10 : including other isomers) pentane gas (C5H 12 : including other isomers) and the like.

[0023] Examples of the molecular formula Cm H 2m As for hydrocarbons represented by, Ethylene gas (C2H4) Propylene gas (C3H6: including other isomers) Butylene gas (C4H8: including other isomers) Pentene gas (C5H 10 (Including other isomers) These are some examples.

[0024] Molecular formula C m H 2m-2 As for hydrocarbons represented by, Acetylene gas (C2H2) Propin gas (C3H4: including other isomers) Butadiene gas (C4H6: including other isomers) Isoprene gas (C5H8: including other isomers) These are some examples.

[0025] The pyrolysis temperature-lowering gas supply source 131b is connected to the gas supply port 134b via a flow controller (MFC) 132b and an on-off valve 133b. The gas supply port 134b is provided so as to penetrate the side wall of the manifold 110 horizontally and diffuses the supplied gas into the processing chamber S located above the manifold 110.

[0026] A gas containing halogen elements is used as the thermal decomposition temperature-lowering gas supplied from the thermal decomposition temperature-lowering gas supply source 131b. The gas containing halogen elements has the function of lowering the thermal decomposition temperature of hydrocarbon-based carbon source gases through its catalytic function, thereby lowering the film deposition temperature of carbon films by thermal CVD.

[0027] Halogen elements include fluorine (F), chlorine (Cl), bromine (Br), and iodine (I). The halogen-containing gas may be the elemental halogen itself, i.e., elemental fluorine (F2) gas, elemental chlorine (Cl2) gas, elemental bromine (Br2) gas, and elemental iodine (I2) gas, or a compound containing these elements. However, elemental halogens have the advantage of not requiring heat for thermal decomposition and being highly effective in lowering the thermal decomposition temperature of hydrocarbon-based carbon source gases. Among the halogen elements, fluorine is highly reactive and may impair the surface roughness and flatness of the resulting carbon film. Therefore, chlorine, bromine, and iodine are preferred halogen elements, excluding fluorine. Of these, chlorine is preferred from the viewpoint of ease of handling.

[0028] The halogen reaction gas supply source 131c is connected to the gas supply port 134c via a flow control unit (MFC) 132c and an on-off valve 133c. The gas supply port 134c is provided so as to penetrate the side wall of the manifold 110 horizontally and diffuses the supplied gas into the processing chamber S located above the manifold 110.

[0029] The gas supplied from the halogen reaction gas source 131c is an element that reacts with halogens, and includes NH3, H2, N2, etc. That is, these gases have the property of reacting with halogens and vaporizing, and react with halogens on or within the carbon film, and are gases that can remove halogens from the surface or within the carbon film. Of these, NH3 is the gas with the highest reactivity with halogens in the low-temperature CVD process, and it is preferable to use NH3 as the halogen reaction gas. However, the halogen reaction gas is not limited to ammonia, and for example, in the case of a higher temperature process, H2 and / or N2 may be used.

[0030] The inert gas supply source 131d is connected to the gas supply port 134d via a flow controller (MFC) 132d and an on-off valve 133d. The gas supply port 134d is provided so as to penetrate the side wall of the manifold 110 horizontally and diffuses the supplied gas into the processing chamber S located above the manifold 110.

[0031] The inert gas supplied from the inert gas source 131d is used as a purge gas or diluent. Examples of inert gases that can be used include N2 gas and noble gases such as Ar gas.

[0032] The first seed gas supply source 131e is connected to the gas supply port 134e via a flow control unit (MFC) 132e and an on-off valve 133e. The gas supply port 134e is provided so as to penetrate the side wall of the manifold 110 horizontally and diffuses the supplied gas into the processing chamber S located above the manifold 110.

[0033] The first seed gas supplied from the first seed gas source 131e is for forming a first seed layer on the substrate prior to the deposition of the carbon film. The first seed layer is a layer that facilitates the formation of the second seed layer on the substrate. As the first seed layer, a film is used that forms Si-H bonds on the surface of the substrate W, creating a surface with Si-H terminations.

[0034] An aminosilane gas is used as the first seed gas. Examples of aminosilane gases used as the first seed gas include gases containing at least one of the following: BAS (butylaminosilane), BTBAS (bis-butylaminosilane), DMAS (dimethylaminosilane), BDMAS (bisdimethylaminosilane), TDMAS (trisdimethylaminosilane), DEAS (diethylaminosilane), BDEAS (bis-diethylaminosilane), DPAS (dipropylaminosilane), and DIPAS (diisopropylaminosilane). Among these, DIPAS is preferred.

[0035] The second seed gas supply source 131f is connected to the gas supply port 134f via a flow control unit (MFC) 132f and an on-off valve 133f. The gas supply port 134f is provided so as to penetrate the side wall of the manifold 110 horizontally and diffuses the supplied gas into the processing chamber S located above the manifold 110.

[0036] The second seed gas supplied from the second seed gas source 131f is for forming a second seed layer on top of the first seed layer prior to the deposition of the carbon film. The second seed layer is a layer that improves the adhesion between the substrate and the carbon film and suppresses substrate damage when the carbon film is deposited. As the second seed layer, a film is used that forms BH bonds on the surface of the substrate W and forms a surface with BH terminations.

[0037] A boron-containing gas is used as the second seed gas. Suitable boron-containing gases for the second seed gas include borane-based gases such as diborane (B2H6) gas and boron trichloride (BCl3) gas. Of these, B2H6 gas is preferred.

[0038] The film deposition apparatus 100 has a control unit 150. The control unit 150 includes a process controller 151, which is, for example, a microprocessor (computer), and the process controller 151 controls each component of the film deposition apparatus 100. A user interface 152 and a storage unit 153 are connected to the process controller 151.

[0039] The user interface 152 includes an input unit, such as a touch panel display and a keyboard, for the operator to input commands and perform other operations to manage the film deposition apparatus 100, and a display unit, such as a display, that visualizes and displays the operating status of the film deposition apparatus 100.

[0040] The memory unit 153 stores so-called process recipes, which include control programs for realizing various processes performed by the film deposition apparatus 100 under the control of the process controller 151, and programs for executing processes according to processing conditions in each component of the film deposition apparatus 100. The process recipes are stored in a storage medium within the memory unit 153. The storage medium may be a hard disk or semiconductor memory, or a portable medium such as a CD-ROM, DVD, or flash memory. The process recipes may also be transmitted from other devices as needed, for example, via a dedicated line.

[0041] The process recipe is read from the storage unit 153 as needed, based on instructions from the operator via the user interface 152, and the process controller 151 instructs the film deposition apparatus 100 to execute the process according to the read process recipe.

[0042] [Film formation method] Referring to Figures 2 to 4, the method for forming a carbon film according to the embodiment, which is carried out using the film deposition apparatus 100 shown in Figure 1, will be described.

[0043] First, a boat 112 loaded with multiple substrates W (for example, 50 to 150) is inserted from below into the processing chamber S of the film deposition apparatus 100, thereby loading the multiple substrates W into the processing chamber S (step S10). The substrates W have, for example, OH-terminated surfaces (see Figure 3(a)). Next, the lower end opening of the manifold 110 is closed with the lid 116 to create a sealed space inside the processing chamber S. Then, the sealed space inside the processing chamber S is evacuated to maintain a predetermined reduced pressure atmosphere, and the power supplied to the heating device 108 is controlled to raise the temperature of the substrates W to the process temperature and maintain it, causing the boat 112 to rotate.

[0044] Next, a seed layer is formed on the substrate W to improve the adhesion between the substrate W and the carbon film (step S20). Step S20 is carried out while the temperature of the substrate W is maintained at, for example, 200°C to 300°C, preferably 215°C. In step S20, a seed layer with a film thickness of, for example, 0.4 nm or less, preferably 0.1 nm, is formed.

[0045] In step S20, first, DIPAS is supplied as the first seed gas from the first seed gas supply source 131e to form Si-H bonds as the first seed layer on the surface of the substrate W (see Figure 3(a)). By forming Si-H bonds on the surface of the substrate W, BH bonds are more easily formed on the surface of the substrate W when the second seed gas is supplied to the substrate W.

[0046] Next, the supply of DIPAS is stopped, and B2H6 gas is supplied as a second seed gas from the second seed gas supply source 131f to form BH bonds as a second seed layer on the surface of the substrate W where Si-H bonds have been formed (see Figure 3(c)). Since the step of forming BH bonds is performed with Si-H bonds already formed on the surface of the substrate W, the formation of BH bonds begins in a short time. In other words, the incubation time is significantly reduced.

[0047] Next, the supply of B2H6 gas is stopped, and a carbon film is deposited on the seed layer by thermal CVD without plasma assistance (step S30). Step S30 is carried out under the same temperature environment as step S20, or under a higher temperature environment. For example, step S30 is carried out after step S20, when the temperature of the substrate W has been raised to, for example, 350°C to 450°C, preferably 390°C.

[0048] In step S30, first, C4H6 gas is supplied as a carbon-containing gas from the carbon-containing gas supply source 131a, and Cl2 gas is supplied as a thermal decomposition temperature lowering gas from the thermal decomposition temperature lowering gas supply source 131b. C4H6 reacts with Cl2 to form C x H y Cl zAs a result of (where x, y, and z are natural numbers greater than or equal to 1), the thermal decomposition temperature decreases. This allows the C4H6 gas to be heated to a predetermined temperature lower than its thermal decomposition temperature and thermally decomposed, and a carbon film CF is deposited on the seed layer by thermal CVD (see Figure 4(a)). In this way, by using a thermal decomposition temperature-lowering gas when depositing the carbon film CF, the thermal decomposition temperature of the carbon-containing gas is lowered by its catalytic effect, and the carbon film is deposited at a temperature below the thermal decomposition temperature of the carbon-containing gas. In other words, the temperature of 650°C or higher, which was conventionally required for depositing carbon films in thermal CVD using carbon-containing gases, can be reduced to a lower temperature, and film deposition at low temperatures of around 300°C becomes possible.

[0049] Next, the supply of C4H6 gas and Cl2 gas is stopped, and NH3 gas is supplied as a halogen reaction gas from the halogen reaction gas supply source 131c to reduce the amount of halogen contained in the carbon film CF (see Figure 4(b)). The NH3 gas reacts with the Cl terminator to form NH4Cl, which can remove the Cl terminator. Therefore, the NH3 gas is supplied as a reaction gas for Cl removal. The NH3 gas can also react with halogens other than Cl, such as F, Br, and I, and can be used as a halogen reaction gas even when halogen gases other than Cl are used. The step of reducing halogen is preferably carried out under a higher pressure environment than the step of forming the carbon film CF. This increases the nitriding power of the NH3 gas and improves the halogen extraction effect. The step of reducing halogen is carried out while maintaining the pressure in the processing chamber S at, for example, 1200 Pa to 16000 Pa (9 Torr to 120 Torr).

[0050] In step S30, a carbon film CF of the desired thickness is formed by repeating a cycle that includes the step of forming a carbon film CF and the step of reducing halogen multiple times.

[0051] Furthermore, an exhaust / purge step may be performed before or after supplying NH3 gas. The exhaust / purge step is performed to remove C4H6 gas, Cl2 gas, NH3 gas, etc., present in the processing chamber S. The exhaust step is a step that increases the exhaust volume by increasing the opening of the exhaust valve. The purge step is a step that supplies an inert gas to the substrate W. Either the exhaust step or the purge step may be performed, or both may be performed. Also, the exhaust step and the purge step may be omitted. Examples of inert gases that can be used include N2 gas, Ar gas, and He gas.

[0052] After the carbon film CF deposition is complete, the processing chamber S is evacuated by the exhaust device 107, and a purge gas, such as N2 gas, is supplied to the processing chamber S from the inert gas supply source 131d to purge the processing chamber S. Then, after returning the processing chamber S to atmospheric pressure, the boat 112 is lowered to remove the substrate W.

[0053] [Examples] (Damage to the base surface and adhesion) The substrate damage and adhesion between the substrate and the carbon film were evaluated when a carbon film was deposited after forming a first seed layer and a second seed layer on the substrate using the carbon film deposition method according to the embodiment described above. For comparison, the substrate damage and adhesion between the substrate and the carbon film were also evaluated when a carbon film was deposited without forming the first seed layer and the second seed layer on the substrate.

[0054] In Example 1, silicon (Si) was used as the substrate, and a first seed layer and a second seed layer were formed on the silicon using the carbon film deposition method according to the embodiment, after which a carbon film was deposited. In Example 1, DIPAS was used as the first seed gas, B2H6 as the second seed gas, C4H6 as the carbon-containing gas, Cl2 as the gas that lowers the thermal decomposition temperature, and NH3 as the halogen reaction gas. In Example 1, the substrate was heated to 215°C to form the first seed layer and the second seed layer, and the substrate was heated to 390°C to deposit the carbon film.

[0055] In Example 2, a silicon oxide film (SiO2) was used as the substrate, and a first seed layer and a second seed layer were formed on the silicon oxide film under the same conditions as in Example 1, after which a carbon film was deposited.

[0056] In Comparative Example 1, a silicon substrate was used, and a carbon film was deposited under the same conditions as in Example 1 without forming a first seed layer and a second seed layer on top of the silicon.

[0057] In Comparative Example 2, a silicon oxide film was used as the substrate, and a carbon film was deposited under the same conditions as in Example 1 without forming a first seed layer and a second seed layer on top of the silicon oxide film.

[0058] In Comparative Example 3, a silicon substrate was used, and a carbon film was deposited on the silicon without forming a first seed layer and a second seed layer. In Comparative Example 3, the substrate was heated to 700°C, higher than 390°C, without using a gas to lower the thermal decomposition temperature, and a carbon film was deposited.

[0059] In Comparative Example 4, a silicon oxide film was used as the substrate, and a carbon film was deposited under the same conditions as in Comparative Example 3 without forming a first seed layer and a second seed layer on top of the silicon oxide film.

[0060] Figure 5 shows the evaluation results for substrate damage and adhesion, and is a diagram showing the results of Examples 1-2 and Comparative Examples 1-2. In Figure 5, the "Substrate" item indicates the type of substrate, and whether the substrate is silicon (Si) or silicon oxide film (SiO2). The "Seed layer" item indicates whether or not a seed layer was formed on the substrate. The "Carbon film" item indicates the conditions for forming the carbon film, "Low temperature" indicates that the carbon film was formed at a low temperature (390°C) using a thermal decomposition temperature lowering gas, and "High temperature" indicates that the carbon film was formed at 700°C without using a thermal decomposition temperature lowering gas. The "Substrate damage" item shows the results of checking for substrate damage using a scanning electron microscope (SEM) after forming the carbon film on the substrate. In the "Substrate damage" item, "Good" indicates that no substrate damage was observed, and "Poor" indicates that substrate damage was observed. The "Adhesion" item shows the results of an adhesion test conducted after forming a carbon film on the substrate to check for peeling of the carbon film. In the "Adhesion" item, "Good" indicates that no peeling of the carbon film was observed, and "Poor" indicates that peeling of the carbon film was observed.

[0061] As shown in Figure 5, in both Example 1 and Example 2, no substrate damage was observed, and no peeling of the carbon film was observed. This result demonstrates that, according to the carbon film formation method of the embodiment, a carbon film with good adhesion can be formed without damaging the substrate, regardless of the type of substrate.

[0062] In contrast, in Comparative Example 1 and Comparative Example 2, no substrate damage was observed, but peeling of the carbon film was confirmed. This result indicates that when a carbon film is deposited on the substrate without forming a first seed layer and a second seed layer on the substrate, the adhesion between the substrate and the carbon film is low.

[0063] Furthermore, in Comparative Example 3, substrate damage and peeling of the carbon film were observed, and in Comparative Example 4, substrate damage was not observed, but peeling of the carbon film was observed. From these results, it was shown that when a carbon film is deposited on the substrate without forming a first seed layer and a second seed layer on the substrate and without using a gas to lower the thermal decomposition temperature, the adhesion between the substrate and the carbon film is low, and substrate damage occurs depending on the type of substrate.

[0064] (XPS spectrum) In Example 3, a carbon film was deposited after forming a first seed layer and a second seed layer on a substrate using the carbon film deposition method according to the embodiment described above, and the XPS spectrum was measured by X-ray photoelectron spectroscopy (XPS). For comparison, a carbon film was deposited after forming a BN film with a thickness of 2.5 nm as a seed layer on a substrate, and the XPS spectrum was measured by XPS (Comparative Example 5).

[0065] Figure 6 shows the measurement results of the XPS spectrum of the carbon film. In Figure 6, the horizontal axis represents the binding energy [eV], and the vertical axis represents the photoelectron intensity. As shown in Figure 6, it can be seen that no peak originating from the B1s orbital appears in the carbon film of Example 3. In contrast, in the carbon film of Comparative Example 5, a peak originating from the B1s orbital appears at a binding energy of 189 eV (BN bond). From these results, it can be said that no BN film is formed in the carbon film of Example 3, or that very little BN film is formed.

[0066] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0067] In the above embodiment, a case was described in which the film deposition apparatus is a batch-type apparatus that processes multiple substrates at once, but the disclosure is not limited thereto. For example, the film deposition apparatus may be a single-wafer apparatus that processes substrates one at a time. [Explanation of symbols]

[0068] 100 Film deposition equipment 130 Gas Supply Department 150 Control Unit CF carbon film S Processing Room W board

Claims

1. (a) A step of forming a seed layer on a substrate, (b) A step of forming a carbon film on the seed layer, It has, The above step (a) is, The steps include supplying an aminosilane-based gas to the substrate to form Si-H bonds on the surface of the substrate, The steps include supplying a boron-containing gas to the substrate and forming B-H bonds on the surface where the Si-H bonds are formed, Includes, The above step (b) is, The steps include supplying a carbon-containing gas and a halogen gas to the substrate and forming the carbon film on the seed layer, The steps include supplying a gas that reacts with the halogen constituting the halogen gas to reduce the amount of halogen contained in the carbon film, including, Film formation method.

2. The step (b) includes repeating a cycle that includes the step of forming the carbon film and the step of reducing the halogen multiple times. The method for forming a film according to claim 1.

3. The step of reducing the halogen is performed under a higher pressure environment than the step of forming the carbon film. The method for forming a film according to claim 1 or 2.

4. Step (b) is performed under the same temperature environment as step (a), or under a higher temperature environment than step (a). The method for forming a film according to any one of claims 1 to 3.

5. Steps (a) and (b) are carried out in the same processing room. The method for forming a film according to any one of claims 1 to 4.

6. A processing chamber for housing the circuit board, A gas supply unit that supplies processing gas to the inside of the processing chamber, A control unit that controls the gas supply unit, Equipped with, The control unit, (a) A step of forming a seed layer on the substrate, (b) A step of forming a carbon film on the seed layer, It is configured to perform, The above step (a) is, The steps include supplying an aminosilane gas to the substrate to form Si-H bonds on the surface of the substrate, The steps include supplying a boron-containing gas to the substrate and forming B-H bonds on the surface where the Si-H bonds are formed, Includes, The above step (b) is, The steps include supplying a carbon-containing gas and a halogen gas to the substrate and forming the carbon film on the seed layer, The steps include supplying a gas that reacts with the halogen constituting the halogen gas to reduce the amount of halogen contained in the carbon film, including, Film deposition equipment.

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