Hot air transfer duct, hot air system and semiconductor process device

By designing a hot air transfer duct and a double hot air ring structure in the semiconductor process equipment, combined with the air volume adjustment module, the problem of insufficient temperature uniformity of the upper cover is solved, and the uniformity of etching or deposition and mass production efficiency are improved.

WO2024067082A9PCT designated stage expired Publication Date: 2025-01-23BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
PCT/CN2023/118422
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-09-29
Filing Date
2023-09-13
Publication Date
2025-01-23

AI Technical Summary

Technical Problem

The existing semiconductor process equipment has the problem of insufficient temperature uniformity of the upper cover in terms of temperature field control, which affects the uniformity of etching or deposition.

Method used

A hot air transfer air duct is designed, including a hot air input structure and an output structure with adjustable air volume. Combined with a double hot air ring structure and a temperature sensor, the air volume adjustment module and plug-in board adjust the structure to ensure that the hot air is evenly distributed to the upper cover. surface.

Benefits of technology

It improves the heating efficiency of the upper cover, shortens the preparation time of process conditions, improves mass production efficiency, and by adjusting the air volume, the temperature difference between the center and the edge of the upper cover is reduced, and the uniformity of the temperature field is enhanced.

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Abstract

A hot air transfer duct, a hot air system and a semiconductor process device. The hot air transfer duct comprises a hot air input structure (12) and / or a hot air output structure (19). The hot air input structure (12) comprises an input structure body (31), and a first input channel (20) and a second input channel (21) arranged in the input structure body (31). Inlets of the first input channel (20) and the second input channel (21) are provided in one end of the input structure body (31), the first and second input channels both extend towards the other end of the input structure body (31) and are bent downwards, and outlets thereof are spaced apart by a certain distance and both located on the lower side of the input structure body (31). The hot air output structure (19) comprises an output structure body (32), and a first output channel (33), a second output channel (34) and a third output channel (15) arranged in the output structure body (32). Inlets of the first output channel (33) and the second output channel (34) are both located on the lower side of the output structure body (32) and spaced apart by a certain distance, and the first and second output channels both extend upwards and are communicated with the third output channel (15), and an outlet of the third output channel (15) is provided on one end of the output structure body (32). The hot air transfer duct provides external hot air to a semiconductor process device for heating same, thereby improving the heating efficiency and the etching uniformity.
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Description

Hot air transfer duct, hot air system and semiconductor process equipment Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a hot air transfer duct, a hot air system and semiconductor process equipment. Background Art

[0002] Currently, in processes such as dry etching or vapor deposition, the process gas will be ionized into ions under the support of the electric field. In addition to the influence of the magnetic field and electric field on the etching or deposition results, the temperature field is also an important factor that cannot be ignored in the process. There are two main meanings of temperature control: on the one hand, by controlling the temperature, the chamber environment can be quickly brought into the environment required by the process, which will shorten the time required for process preparation and thus improve mass production efficiency. On the other hand, by controlling the temperature field, the uniformity of the plasma distribution in the process chamber can be improved, thereby improving the uniformity of plasma etching or deposition on the wafer surface.

[0003] Typically, controlling the temperature of the process chamber's inner walls and upper cover is an important means of controlling the temperature field. The process chamber's temperature can be achieved by monitoring and controlling the heater's power. The upper cover's temperature can be controlled in a variety of ways. Initially, since the adjustment bracket was typically temperature-controlled to a certain level, the upper cover could be heated by bringing the adjustment bracket into contact with it. Later, heaters were introduced to control the upper cover's temperature by wrapping a heating tape around its periphery. With the advancement of process technology, the demand for temperature field control in etching processes has gradually increased, and the uniformity of the upper cover's temperature has become a concern and a pressing issue.

[0004] Summary of the Invention

[0005] In order to overcome the problems existing in the prior art, the present invention provides a hot air transfer duct, a hot air system and a semiconductor process equipment, which are used to overcome the current defects.

[0006] A hot air transfer duct is used in a hot air system of a semiconductor process equipment, wherein the hot air transfer duct comprises a hot air input structure and / or a hot air output structure;

[0007] The hot air input structure comprises:

[0008] Input the structural body;

[0009] a first input channel, located in the input structural body, with an inlet of the first input channel located at one end of the input structural body, extending from the inlet to the other end of the input structural body and bending downward, and an outlet of the first input channel located at a lower side of the input structural body;

[0010] a second input channel located within the input structural body and below the first input channel, the inlet of the second input channel being located at the one end of the input structural body, the second input channel extending from the inlet to the other end of the input structural body and bending downward, the distance the second input channel extends to the other end of the input structural body being less than the distance the first input channel extends to the other end of the input structural body, and the outlet of the second input channel being located on the lower side of the input air duct body; and / or

[0011] The hot air output structure includes:

[0012] Output structure body;

[0013] a first output channel, located in the output structural body, wherein the entrance of the first output channel is located at the lower side of the output structural body, and the first output channel extends upward from the entrance;

[0014] a second output channel, located in the output structural body, wherein the entrance of the second output channel is located at the lower side of the output structural body, and the second output channel extends upward from the entrance;

[0015] a third output channel located in the output structural body and communicating with the first output channel and the second output channel; an outlet of the third output channel located at one end of the output structural body; and a distance between an inlet of the first output channel and the one end of the output structural body is greater than a distance between an inlet of the second output channel and the one end of the output structural body.

[0016] According to the above aspects and any possible implementation, there is further provided an implementation, further comprising:

[0017] An air volume regulating module is provided at the one end of the input structural body and is used to regulate the air volume input to the first input channel and / or the second input channel.

[0018] According to the above aspects and any possible implementation, further provided is an implementation, wherein the air volume adjustment module includes:

[0019] A plug-in plate fixing member is provided on the hot air input structure;

[0020] The plugboard is slidably connected to the plugboard fixing member to change the size of the entrance of the first input channel and / or the second input channel.

[0021] The present invention also provides a hot air system for semiconductor process equipment, comprising:

[0022] at least one hot air supply module;

[0023] At least one pair of hot air transfer ducts according to the present invention, wherein the output port of the hot air supply module is connected to the inlet of the first input channel and the inlet of the second input channel of the hot air input structure, and the input port of the hot air supply module is connected to the outlet of the third input channel of the hot air output structure;

[0024] a first hot air ring, disposed below the hot air transfer duct, the first hot air ring being in communication with the outlet of the first input channel of the hot air input structure and the inlet of the first output channel of the hot air output structure;

[0025] The second hot air ring is arranged around the outer side of the first hot air ring and below the hot air transfer air duct. The second hot air ring is respectively connected to the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure.

[0026] According to the aspects described above and any possible implementation method, an implementation method is further provided, wherein there are two pairs of hot air transfer ducts, and the two pairs of hot air transfer ducts are arranged opposite to each other; there are two hot air providing modules, and the two hot air providing modules are arranged opposite to each other, each hot air providing module is arranged adjacent to or adjacent to the hot air transfer duct, and the hot air providing module is located on the side of the two pairs of hot air transfer ducts away from each other.

[0027] According to the above aspects and any possible implementation, there is further provided an implementation, further comprising:

[0028] at least one first temperature sensor, disposed on the first hot air ring;

[0029] at least one second temperature sensor, disposed on the second hot air ring;

[0030] When the temperature of the first hot air ring is higher than that of the second hot air ring, narrowing the entrance of the first input channel or widening the entrance of the second input channel; or

[0031] When the temperature of the first hot air ring is lower than that of the second hot air ring, the inlet of the first input channel is enlarged or the inlet of the second input channel is reduced.

[0032] According to the above aspects and any possible implementation, there is further provided an implementation, wherein the first hot air ring includes two first semicircular annular cavities, and the upper surface of each of the first semicircular annular cavities includes two first openings, and the two first openings are respectively connected to the outlet of the first input channel of the hot air input structure of the hot air transfer duct and the inlet of the first output channel of the hot air output structure;

[0033] The second hot air ring includes two second semicircular annular cavities, and the upper surface of each of the second semicircular annular cavities includes two second openings, and the two second openings are respectively connected to the outlet of the second input channel of the hot air input structure of the hot air transfer duct and the inlet of the second output channel of the hot air output structure; and

[0034] The two first semicircular annular cavities and the two second semicircular annular cavities are symmetrically arranged.

[0035] According to the above aspects and any possible implementation, there is further provided an implementation, wherein the two first openings of the first semicircular annular cavity are respectively provided at two ends of the first semicircular annular cavity;

[0036] The two second openings of the second semicircular ring cavity are respectively arranged at two ends of the second semicircular ring cavity.

[0037] According to the aspects described above and any possible implementation method, an implementation method is further provided, wherein the hot air providing module is a high-temperature upper electrode module, comprising a heating wire and an air amplifier connected to each other, the heating wire being arranged at the input port of the hot air providing module; the air amplifier being arranged at the output port of the hot air providing module.

[0038] The present invention also provides a semiconductor process equipment, comprising:

[0039] A process chamber, comprising a chamber body and an upper cover;

[0040] A first coil group is arranged on the upper cover;

[0041] A second coil group is arranged on the upper cover and surrounds the outer side of the first coil group;

[0042] The hot air system of the present invention, wherein the first hot air ring and the second hot air ring of the hot air system are arranged on the upper cover, the first hot air ring is arranged between the first coil group and the second coil group, and the second hot air ring is arranged between the second coil group and the edge of the upper cover;

[0043] The coil bracket is arranged above the first coil group and the second coil group and the first hot air ring and the second hot air ring, and is used to fix the first coil group and the second coil group.

[0044] According to the above aspects and any possible implementation, an implementation is further provided, wherein at least four avoidance holes are provided on the coil support, and all the first openings and the second openings on the first hot air ring and the second hot air ring are provided in the corresponding avoidance holes.

[0045] According to the above aspects and any possible implementation manner, a further implementation manner is provided, wherein the semiconductor process equipment is a plasma process equipment.

[0046] Beneficial effects of the present invention

[0047] Compared with the prior art, the present invention has the following beneficial effects:

[0048] The hot air transfer duct provided by the present invention includes a hot air input structure and / or a hot air output structure with adjustable air volume; the hot air system includes a hot air transfer duct, a hot air supply module, a first and a second hot air ring and a temperature sensor. The semiconductor process equipment adopts the hot air system provided by the present invention, and at the same time adopts a double hot air ring structure arranged between the first and second coil groups and the edge of the upper cover, which cooperates with the hot air transfer duct to increase the contact area between the hot air and the upper surface of the upper cover. The hot air input structure of the hot air transfer duct adopts a layered double input duct and the hot air output structure adopts a layered double output duct to ensure that the air volume entering and flowing out of the first and second hot air rings is fixed and does not interfere with each other, which improves the efficiency of heating the upper cover to a certain extent, thereby shortening the preparation time of the process conditions inside the etcher chamber, thereby improving mass production efficiency. In addition, the present invention adjusts the air volume entering the first and / or second hot air rings by adjusting the air volume of the hot air input structure, thereby reducing the temperature difference between the center part and the edge part of the upper cover, thereby increasing the uniformity of the temperature field in the semiconductor process chamber and improving the uniformity of etching. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] FIG1 is a schematic diagram of a hot air system of related art;

[0050] FIG2 is a schematic diagram of a second hot air system of the related art;

[0051] FIG3 is a schematic diagram of the hot air input structure of the present invention;

[0052] FIG4 is a schematic diagram of the hot air output structure of the present invention;

[0053] FIG5 is a schematic diagram showing the position of the air volume adjustment module of the present invention;

[0054] FIG6 is a schematic structural diagram of an air volume regulating module according to the present invention;

[0055] FIG7 is a schematic diagram of a hot air system of a semiconductor process equipment according to the present invention;

[0056] FIG8 is a schematic diagram of a quarter position adjustment of the present invention;

[0057] FIG9 is a schematic diagram of the three-eighths position adjustment of the present invention;

[0058] FIG10 is a schematic diagram of one-eighth position adjustment according to the present invention;

[0059] FIG11 is a schematic structural diagram of an inner hot air ring according to the present invention;

[0060] FIG12 is a schematic diagram of the coil support structure of the present invention. DETAILED DESCRIPTION

[0061] To better understand the technical solutions of the present invention, the present invention includes but is not limited to the specific embodiments described below. Similar technologies and methods should be considered within the scope of protection of the present invention. To further clarify the technical problems, technical solutions, and advantages to be solved by the present invention, the following detailed description is provided in conjunction with the accompanying drawings and specific embodiments.

[0062] It should be understood that the embodiments described herein are only a portion of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0063] First, the hot air system involved in the relevant technology is introduced.

[0064] As shown in Figure 1, related art 1 uses a hot air system to control the temperature of the top cover of the process chamber of semiconductor processing equipment. This hot air system comprises a hot air ring 2, a transfer air duct 3, a first high-temperature upper electrode module 6, a second high-temperature upper electrode module 7, an inner coil assembly 8, an outer coil assembly 9, and a thermocouple 10. The top cover 1 is a short cylindrical cover made of quartz or ceramic for the process chamber. The top cover 1, inner coil assembly 8, and outer coil assembly 9 form a single assembly, namely the top cover assembly. Both the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7 are mounted outside the process chamber and include a heating filament and an air amplifier. The heating filament continuously heats the compressed air flowing through and in contact with it. The compressed air is supplied from the factory. The air amplifier accelerates the flow rate of the heated compressed air, causing it to circulate within the hot air ring 2, generating hot air. The transfer air duct 3 is respectively connected to the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7. The transfer air duct 3 transmits the hot air to the hot air ring 2, and can also transmit the air in the hot air ring 2 back to the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7 for continued heating. The hot air ring 2 is placed above the upper cover 1 and is located between the inner coil group 8 and the outer coil group 9. The hot air circulating in the hot air ring 2 transfers heat to the upper cover 1, thereby heating the upper cover 1. A temperature measuring thermocouple 10 is set to measure the temperature of the upper cover in real time, and the temperature automatic control module automatically controls the power of the heating wires in the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7 according to the temperature obtained by the measurement. The temperature automatic control module (including but not limited to parts such as thermostats) is a prior art and is not described in detail in the present invention. The thermocouple 10 measures the temperature of the upper cover 1 corresponding to the area where the hot air ring 2 is located. However, this technology has the following disadvantages:

[0065] 1. The coil is a key component in determining the magnetic field distribution. Therefore, for mass-produced semiconductor etching process equipment, the number of coil turns and placement cannot be changed. Due to the limitations on the number of coil turns and placement, the hot air ring 2 can only be placed between the inner coil group 8 and the outer coil group 9. As a result, the coverage area of ​​the hot air ring 2 on the upper cover 1 is limited by the distance between the inner coil group 8 and the outer coil group 9. This limits the contact area between the upper cover 1 and the hot air ring, resulting in low heating efficiency for the upper cover 1.

[0066] 2. The heated area of ​​the upper cover 1 is concentrated in the area covered by the hot air ring 2, which will inevitably lead to a temperature distribution of the upper cover 1 with a high temperature in the area covered by the hot air ring 2 and a gradually decreasing temperature on both sides of the hot air ring 2. In particular, the heating effect at the edge of the upper cover 1 is relatively poor.

[0067] Related technology 2 is based on related technology 1, and adds a heating device to the outer ring of the upper cover 1. As shown in Figure 2, the heating device includes a uniform heating ring 4 and a heating belt 5. This setting can solve the shortcomings of low hot air heating efficiency and relatively poor heating effect of the edge of the upper cover in related technology 1. The heat of the heating belt 5 is transferred to the cylindrical surface of the upper cover 1 facing outward through the aluminum uniform heating ring 4, thereby heating the edge of the upper cover 1. In general, the heating device cooperates with the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7, the adapter air duct 3, the hot air ring 2 and the thermocouple 10 to control the temperature of the upper cover 1. At this time, the value obtained by measuring the temperature thermocouple 10 can be used as the basis for regulating the heating wire power of the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7 and the power of the heating belt 5. However, this technology has the following disadvantages:

[0068] 1. The material of the heat-distributing ring 4 is aluminum, which is easy to deform after long-term operation. This deformation makes the heat-distributing ring 4 to the upper cover uneven and insufficient, which will lead to uneven temperature distribution on the upper cover;

[0069] 2. Due to the limited space inside the machine, there is a risk of collision with other parts inside the semiconductor process chamber when replacing or installing the heating belt 5.

[0070] An embodiment of the present invention provides a hot air transfer duct for a hot air system of semiconductor process equipment, as shown in Figures 3, 4, and 7 to illustrate its specific structural components. The hot air transfer duct includes a hot air input structure 12 and / or a hot air output structure 19. In this embodiment, the hot air transfer duct includes the hot air input structure 12 and the hot air output structure 19. The hot air transfer duct is used to provide externally supplied hot air to the semiconductor process equipment for heating and / or to transport hot air from the upper cover. More specifically, the hot air transfer duct is used to transport hot air provided by a hot air supply module, such as a high-temperature upper electrode module, to a heating structure, such as a hot air ring, for heating the upper cover of the process chamber of the semiconductor process equipment. The hot air input structure 12 is used to introduce hot air from the hot air supply module to the heating structure, such as the hot air ring, and the hot air output structure 19 is used to transport hot air output from the heating structure, such as the hot air ring, back to the hot air supply module to achieve circulating heating.

[0071] Furthermore, the hot air input structure 12 includes:

[0072] Input structure body 31;

[0073] The first input channel 20 is located in the input structural body 31. The inlet of the first input channel 20 is located at one end of the input structural body 31. The first input channel 20 extends from the inlet to the other end of the input structural body 31 and bends downward. The outlet of the first input channel 20 is located on the lower side of the input structural body 31.

[0074] The second input channel 21 is located within the input structural body 31 and below the first input channel 20. The entrance of the second input channel 21 is located at one end of the input structural body 31 and below the entrance of the first input channel 20. The second input channel 21 extends from the entrance to the other end of the input structural body 31 and bends downward. The distance the second input channel 21 extends to the other end of the input structural body 31 is less than the distance the first input channel 20 extends to the other end of the input structural body 31. The exit of the second input channel 21 is located on the bottom side of the input structural body 31. In an alternative embodiment, the entrance of the second input channel 21 and the entrance of the first input channel 20 are located at the same end of the input structural body 31, and together they form the entrance 14 of the first input channel 20 and the second input channel 21.

[0075] Furthermore, the hot air output structure 19 includes:

[0076] Output structure main body 32;

[0077] A first output channel 33 is located in the output structural body 32. The inlet of the first output channel 33 is located on the lower side of the output structural body 32. The first output channel 33 extends upward from the inlet.

[0078] A second output channel 34 is located in the output structural body 32. The entrance of the second output channel 34 is located on the lower side of the output structural body 32. The second output channel 34 extends upward from the entrance.

[0079] The third output channel 15 is located within the output structural body 32 and communicates with the first output channel 33 and the second output channel 34. The outlet of the third output channel 15 is located at one end of the output structural body 32, and the inlet of the first output channel 33 is farther from the end of the output structural body 32 than the inlet of the second output channel 34. In an alternative embodiment, the third output channel 15 extends horizontally from one end of the output structural body 32 (i.e., the outlet end) to the other end, passing through the outlets of the second output channel 34 and the first output channel 33, thereby communicating with both.

[0080] Those skilled in the art should understand that although in the examples of Figures 3 and 4, the hot air input structure 12 has two input channels and the hot air output structure 19 has two output channels, the present invention is not limited to this. As long as the number of input channels and output channels is the same, more input channels and output channels are feasible.

[0081] The inlets of the first input channel 20 and the second input channel 21 of the hot air transfer channel of the embodiment of the present invention are adapted to communicate with the high-temperature upper electrode module 6 to receive the hot air provided by the high-temperature upper electrode module 6 and deliver the hot air to a heating structure such as a hot air ring (e.g., the first hot air ring 11 and the second hot air ring 16 in FIG. 7 , which will be described in detail later in the present invention). It should be understood by those skilled in the art that the number of hot air rings is not limited to two, and as long as the number of hot air rings is the same as the number of input channels and output channels, more hot air rings are feasible.

[0082] The hot air input structure 12 provides the received hot air to a heating structure such as a hot air ring (for example, the first hot air ring 11 and the second hot air ring 16 in Figure 7) through the outlet of the first input channel 20 and the outlet of the second input channel 21, and the inlet of the first output channel 33 and the inlet of the second output channel 34 of the hot air output structure 19 are suitable for connecting with openings on a heating structure such as a hot air ring (for example, the first hot air ring 11 and the second hot air ring 16 in Figure 7) to receive the hot air flowing out from the openings of a heating structure such as a hot air ring (for example, the first hot air ring 11 and the second hot air ring 16 in Figure 7). The hot air flow process is specifically described in detail in the later part of the present invention.

[0083] As some optional implementations of the embodiments of the present invention, as shown in Figure 5, an air volume adjustment module 22 is provided at the inlet of the first input channel 20 to adjust the air volume output to the first input channel 20 and the second input channel 21 in the input structure body 31 of the hot air input structure 12. Since the distance the second input channel 21 extends to the other end of the input structure body 31 is less than the distance the first input channel 20 extends to the other end of the input structure body 31, the outlet of the second input channel 21 is closer to the edge of the upper cover relative to the outlet of the first input channel 20. In other words, the outlet of the second input channel 21 and the outlet of the first input channel 20 are located at the edge and center of the upper cover respectively. In this case, by adjusting the air volume output to the first input channel 20 and / or the second input channel 21 through the air volume adjustment module 22, the temperature difference between the center and edge of the upper cover can be reduced, thereby increasing the uniformity of the temperature field in the semiconductor process chamber and improving the uniformity of etching. The air volume adjustment module provided in the present invention can solve the shortcomings of the related art one, that is, the temperature gradient distribution of the hot air ring on both sides is gradually lower, especially the relatively poor heating effect at the edge of the upper cover. Those skilled in the art should understand that the air volume adjustment module 22 can be set at one end of the input structural body 31 to adjust the air volume input to the first input channel 20 and / or the second input channel 21. That is, the air volume adjustment module 22 can be set at the entrance of the first input channel 20 to adjust the air volume of the first input channel 20 alone; it can also be set at the entrance of the second input channel 21 to adjust the air volume of the second input channel 21 alone; it can also be set at the entrance 14 of both the first input channel 20 and the second input channel 21 to simultaneously adjust the air volume of the first input channel 20 and the second input channel 21, thereby realizing the adjustment of the air volume input to the first input channel and / or the second input channel.

[0084] As shown in Figure 6, the air volume adjustment module 22 in the embodiment of the present invention adopts, for example, a plug-in plate adjustment structure 13 to achieve the above-mentioned function. The plug-in plate adjustment structure 13 includes a plug-in plate 25 and a plug-in plate fixing member 26, wherein the plug-in plate fixing member 26 is arranged on the hot air input structure, specifically, it can be located on a side (left side, right side or upper side) of the input structure main body 31 adjacent to the entrance of the first input channel 20, and is fixedly connected to the input structure main body 31. Of course, it can also be fixed on the left side, right side or lower side of the side of the input structure main body 31 adjacent to the entrance of the second input channel 21, and can also be fixed on the left side, right side, upper side or lower side of the entrance 14 composed of the input structure main body 31 adjacent to the entrance of the first input channel 20 and the entrance of the second input channel 21. The plug plate 25 is slidably connected to the plug plate fixing member 26, and a portion of the plug plate 25 passes through the input structure body 31, and is used to slide the plug plate 25 relative to the plug plate fixing member 26 through insertion or withdrawal, so as to at least partially block the entrance of the first input channel 20, or the entrance of the second input channel 21, or the entrance 14 composed of the entrance of the first input channel 20 and the entrance of the second input channel 21, thereby changing the size of the entrance of the first input channel 20, or the size of the entrance of the second input channel 21, or the size of the entrance 14 composed of the entrance of the first input channel 20 and the entrance of the second input channel 21.

[0085] Specifically, the specific way of sliding connection between the plug board 25 and the plug board fixing piece 26 is, for example, a strip-shaped through hole is provided on the plug board fixing piece 26, and a threaded hole or through hole is correspondingly provided on the plug board 25. After the plug board 25 completes the insertion or withdrawal action to determine the stop position of the plug board 25, a screw 27 (or bolt) is used to pass through the above-mentioned strip-shaped through hole and the threaded hole (or through hole) on the plug board 25 in sequence to lock the plug board 25 on the plug board fixing piece 26. The plug board 25 and the plug board fixing piece 26 are connected and locked by a threaded connection. However, the embodiment of the present invention is not limited to this. In actual applications, other connection and locking structures can also be used, and the present invention is not limited thereto.

[0086] As shown in Figure 6, the plug plate 25 can be pushed and slid left and right or up and down along the entrance of the first input channel 20, and can also be pushed and slid left and right or up and down along the entrance of the second input channel 21, and can also be pushed and slid left and right or up and down along the entrance 14 composed of the entrance of the first input channel 20 and the entrance of the second input channel 21. According to the needs of temperature adjustment, the plug plate 25 can be moved to any position of the entrance of the first input channel 20, and can also be moved to any position of the entrance of the second input channel 21, and can also be moved to any position of the entrance 14 composed of the entrance of the first input channel 20 and the entrance of the second input channel 21. Taking the example of the plug plate adjustment structure 13 being fixed on one side surface of the entrance of the first input channel 20 and sliding left and right, one end of the plug plate 25 can be moved left and right to a position of 1 / 8, 1 / 4, or 3 / 8 of the entrance area of ​​the first input channel 20, thereby changing the size of the entrance of the first input channel 20, and then changing the opening area of ​​the entrance of the first input channel 20, thereby adjusting the air volume output from the outlet of the first input channel 20 and / or the outlet of the second input channel 21 in the input structure main body 31.

[0087] The plug-in plate 25 is inserted into the entrance of the first input channel 20 in the input structure main body 31 of the hot air input structure 12. The left and right or up and down pulling and inserting changes the size of the entrance of the first input channel 20, thereby enlarging or reducing the amount of hot air entering the first input channel 20. At the same time, since the total air intake of the hot air input structure 12 entering the hot air transfer air duct remains unchanged, the air volume entering the second input channel 21 will also be reduced or enlarged accordingly. Similarly, when the plug-in plate adjustment structure 13 is fixed at the entrance of the second input channel 21 and the entrance 14 composed of the entrance of the first input channel 20 and the entrance of the second input channel 21, the movement method of the plug-in plate 25 is similar to the above method and will not be repeated.

[0088] Another embodiment of the present invention provides a hot air system for semiconductor process equipment, which includes at least one pair of hot air transfer ducts provided in the above embodiments, and also includes at least one hot air supply module; the output port of the hot air supply module is connected to the inlet of the first input channel and the inlet of the second input channel of the hot air input structure, that is, it is connected to the inlet of both the first input channel and the second input channel, and the input port of the hot air supply module is connected to the outlet of the third input channel of the hot air output structure.

[0089] The first hot air ring 11 is an inner hot air ring, which is arranged below the hot air transfer duct. The first hot air ring 11 is connected to the outlet of the first input channel of the hot air input structure and the inlet of the first output channel of the hot air output structure respectively;

[0090] The second hot air ring 16 is an outer hot air ring, which is arranged around the outside of the first hot air ring 11 and below the hot air transfer air duct. The second hot air ring 16 is respectively connected to the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure.

[0091] It should be noted that, in the above embodiment, the hot air transfer duct includes a hot air input structure 12 and a hot air output structure 19. However, when the hot air transfer duct includes the hot air input structure 12 or the hot air output structure 19, the input port or the output port of the hot air supply module can adopt other hot air output structures or hot air input structures to achieve the communication between the input port or the output port of the hot air supply module and the first hot air ring 11 and the second hot air ring 16, respectively. In other words, the hot air input structure 12 and the hot air output structure 19 in the embodiment of the present invention are not limited to being used simultaneously, and can also be used in combination with other hot air output structures or hot air input structures.

[0092] As some optional implementation methods of the embodiments of the present invention, there are two pairs of hot air transfer ducts in the present invention, and the two pairs of hot air transfer ducts are arranged opposite to each other, as shown in Figure 7. The first pair of hot air transfer ducts includes a hot air input structure 12 and a hot air output structure 19, and the second pair of hot air transfer ducts includes a hot air input structure 12' and a hot air output structure 19', wherein the structural composition of the hot air input structure 12' and the hot air output structure 19' are exactly the same as the structural composition of the hot air input structure 12 and the hot air output structure 19, respectively, and the present invention will not repeat them. There are two hot air supply modules in the present invention, and the two hot air supply modules are arranged opposite to each other. The two modules respectively include a first high-temperature upper electrode module 6 and a second high-temperature upper electrode module 7 with exactly the same structure. Each hot air supply module and the hot air transfer air duct are arranged adjacent to or adjacent to each other, and the hot air supply module is located on the side of the two pairs of hot air transfer air ducts away from each other, that is, it is arranged on the side of the hot air transfer air duct away from the first hot air ring 11 and the second hot air ring 16. Since hot air is provided, the relationship of being adjacent to or adjacent to the hot air transfer air duct ensures that the temperature and speed of the hot air output by the hot air supply module are not affected.

[0093] As some optional implementations of this embodiment, as shown in Figure 11, the first hot air ring 11 includes two symmetrically arranged first semicircular annular cavities, and the upper surface of each first semicircular annular cavity includes two first openings, which are respectively arranged at the two ends of each first semicircular annular cavity. The four first openings can be, for example, circular through holes 24, 28, 29 and 30, respectively, wherein the through hole 24 at one end of a first semicircular annular cavity is connected to the outlet of the first input channel 20 of the hot air input structure 12 of the first hot air transfer air duct; the through hole 28 at the other end is connected to the inlet of the first output channel 33' of the hot air output structure 19' of the second hot air transfer air duct; the through hole 29 at one end of another first semicircular annular cavity is connected to the outlet of the first input channel 20' of the second hot air input structure 12'; and the through hole 30 at the other end is connected to the inlet of the first output channel 33 of the hot air output structure 19 of the first hot air transfer air duct. Based on the same setting, the second hot air ring 16 in the embodiment of the present invention also includes two symmetrically arranged second semicircular annular cavities, and the upper surface of each second semicircular annular cavity includes two second openings, and the two second openings are respectively arranged at the two ends of each second semicircular annular cavity. The four second openings can be, for example, circular through holes, wherein the first through hole at one end of one second semicircular annular cavity is connected to the outlet of the second input channel 21 of the hot air input structure 12 of the first hot air transfer air duct; the second through hole at the other end is connected to the entrance of the second output channel 34' of the hot air output structure 19' of the second hot air transfer air duct; the third through hole at one end of another second semicircular annular cavity is connected to the outlet of the second input channel 21' of the second hot air input structure 12'; and the fourth through hole at the other end is connected to the entrance of the second output channel 34 of the hot air output structure 19 of the first hot air transfer air duct. The first hot air ring 11 and the second hot air ring 16 of the present invention are both symmetrically arranged in the form of two first and second semicircular annular cavities, serving as flow channels for hot air circulation. The hot air is received from the hot air input structure through the first through hole and the fourth through hole thereon, and after flowing in the two first and second semicircular annular cavities, it flows into the inlet of the first output channel and the second output channel of the hot air output structure through the second through hole and the third through hole, thereby realizing the circulation and recovery of the hot air. The through holes on the first hot air ring 11 and the second hot air ring 16 of the present invention can both flow in and out of hot air, which is specifically determined by the different positions of the through holes.

[0094] As some optional implementations of the present invention, the input port of the first high-temperature upper electrode module 6 is connected to an external compressed air device, and the output port is connected to the inlet 14 formed by the inlet of the first input channel 20 and the inlet of the second input channel 21 of the hot air input structure 12 of the hot air transfer channel. The first high-temperature upper electrode module 6 includes a heating wire and an air amplifier connected to each other. The heating wire is arranged at the input port of the first high-temperature upper electrode module 6 to heat the compressed air flowing into the input port; the air amplifier is arranged at the output port of the first high-temperature upper electrode module 6 to amplify and accelerate the flow rate of the compressed air or hot air heated by the heating wire. The compressed air device is a factory service CDA (compressed dry air). The compressed air it delivers is heated by the heating wire in the first high-temperature upper electrode module 6, and then the air amplifier amplifies and accelerates the flow rate. The heated and accelerated air circulates to form hot air. The hot air circulates back and forth from the first high-temperature upper electrode module 6 to flow into the hot air input structure, the first hot air ring 11 and the second hot air ring 16, the hot air output structure, and finally flows back to the first high-temperature upper electrode module 6. The specific hot air circulation process is described in detail below.

[0095] As some optional implementations of the embodiments of the present invention, the present invention also includes at least one first temperature sensor and at least one second temperature sensor, at least one first temperature sensor is arranged on the first hot air ring 11, specifically, it is arranged near the through hole of the first hot air ring 11; at least one second temperature sensor is arranged on the second hot air ring 16, specifically, it is arranged near the through hole of the second hot air ring 16; when the temperature of the first hot air ring 11 measured by the first temperature sensor is higher than the temperature of the second hot air ring 16 measured by the second temperature sensor, the inlet size of the first input channel 20 of the hot air input structure 12 is reduced and / or the inlet size of the second input channel 21 is expanded through the air volume adjustment structure; or when the temperature of the first hot air ring 11 measured by the first temperature sensor is lower than the temperature of the second hot air ring 16 measured by the second temperature sensor, the inlet size of the first input channel 20 of the hot air input structure 12 is expanded and / or the inlet size of the second input channel 21 is reduced.

[0096] As some optional implementation methods of the embodiments of the present invention, the first temperature sensor and the second temperature sensor in the present invention are implemented by thermocouples 10, at least four thermocouples are set on each hot air ring, and each thermocouple 10 is installed near each through hole on the first hot air ring 11 and the second hot air ring 16. These thermocouples are used to measure the temperature at different setting positions of the thermocouples of the first hot air ring 11 and the second hot air ring 16.

[0097] Another embodiment of the present invention further provides a semiconductor process equipment, which can be a plasma process equipment, and further a plasma etching or deposition process equipment. As shown in Figure 7, the semiconductor process equipment includes a process chamber having an upper cover 1 and a chamber body; a first coil group 8 is arranged on the upper cover 1; a second coil group 9 is also arranged on the upper cover 1 and is arranged around the outside of the first coil group 8; the hot air system of the above embodiment, the first hot air ring 11 and the second hot air ring 16 of the hot air system are both arranged on the upper cover 1, thereby heating the process chamber. Taking the plasma etching process as an example, in the dry etching process of the process chamber, the process gas is ionized into ions under the support of the electric field to form plasma. This high-energy plasma bombards the surface of the wafer, thereby obtaining the pattern required for preparing the integrated circuit. In the semiconductor process equipment of an embodiment of the present invention, the first hot air ring 11 is arranged between the first coil group 8 and the second coil group 9, and the second hot air ring 16 is arranged between the second coil group 9 and the edge of the upper cover 1; as shown in Figure 12, the coil bracket 23 is arranged above the first coil group 8 and the second coil group 9 and the first hot air ring 11 and the second hot air ring 16, and is used to fix the first coil group 8 and the second coil group 9, wherein the first coil group 8 is the inner coil group and the second coil group 9 is the outer coil group.

[0098] The semiconductor process equipment of the present invention may also include multiple coil groups, each of which may include multiple coils. The arrangement of the multiple coil groups and the hot air ring is similar to the arrangement of the hot air ring when the semiconductor process equipment provided in the embodiment of the present invention includes two coil groups, and both are within the scope of protection of the present invention. The second hot air ring 16 replaces the heating device of the related art 2, namely the heating belt 5 and the aluminum uniform heat ring 4, to avoid the disadvantage of the related art 2 that the aluminum uniform heat ring 4 deforms and requires frequent replacement of the entire heating device. Four avoidance holes are provided on the coil bracket 23 for fixing and supporting the first coil group 8 and the second coil group 9. The four through holes on the first hot air ring 11 and the second hot air ring 16 are respectively embedded in each avoidance hole, so that the through holes are connected with the corresponding channels of the hot air transfer air duct, and the hot air flowing in and / or out of these embedded through holes heats the upper surface of the upper cover 1. The two hot air transfer air ducts are symmetrically arranged on both sides of the coil bracket 23, and the outlet of the first input air duct 20 of the hot air input structure 12 of the first hot air transfer air duct is connected to the through hole 24 on the first hot air ring 11, and the outlet of the second input air duct 21 is connected to the first through hole on the second hot air ring 16; The inlet of the first output channel 33' of the hot air output structure 19' of the hot air transfer duct is connected to the through hole 28 of the first hot air ring 11, and the inlet of the second output channel 34' is connected to the second through hole of the second hot air ring 16; the outlet of the first input channel 20' of the hot air input structure 12' of the second hot air transfer duct is connected to the through hole 29 of the first hot air ring 11, and the outlet of the second input channel 21' is connected to the third through hole of the second hot air ring 16; the inlet of the first output channel 33 of the hot air output structure 19 of the first hot air transfer duct is connected to the through hole 30 on the first hot air ring 11, and the inlet of the second output channel 34 is connected to the fourth through hole on the second hot air ring 16. The hot air transfer ducts and high-temperature upper electrode modules symmetrically arranged on both sides of the upper surface of the upper cover of the present invention can uniformly heat the upper cover 1 and ensure uniform heating of the upper surface of the upper cover 1.

[0099] As some optional implementations of the embodiments of the present invention, the present invention takes the first hot air ring 11 as an example to describe the flow process of the hot air heating the upper cover 1 after the hot air system of the present invention is started.After the input port of the first high-temperature upper electrode module 6 receives the compressed air from the factory, the heating wire arranged inside it heats the compressed air; the air amplifier amplifies and accelerates the flow rate of the heated compressed air, and the heated and accelerated air circulates to form hot air, and the hot air is output from the output port of the first high-temperature upper electrode module 6 to the inlet 14 composed of the inlet of the first input channel 20 and the inlet of the second input channel 21 in the input structure body 31 of the hot air input structure 12 of the hot air transfer air duct, and flows into the through hole 24 at the end of the first semicircular ring cavity on the right side of the first hot air ring 11 through the outlet of the first input channel 20 in the input structure body 31, and the hot air entering the through hole 24 flows in the first semicircular ring cavity. The hot air flows along the first semicircular annular cavity path to the other end, and the flowing hot air flows out through the through hole 28 of the end and enters the hot air output structure 19' through the inlet of the first output channel 33' in the output structure main body 32' of the hot air output structure 19', and flows out through the outlet of the third output channel 18. The outflowing hot air flows into the input port of the second high-temperature upper electrode module 7 connected to the outlet. The second high-temperature upper electrode module 7 heats and accelerates the received hot air and outputs it through its output port. The output hot air passes through the inlet of the first input channel 20' in the input structure main body 31' of the hot air input structure 12' of the second hot air transfer air duct and the second input The hot air enters the hot air ring 11 through the inlet 17 formed by the inlet of the channel 21', and flows into the end through hole 29 of the other first semicircular ring cavity on the left side of the first hot air ring 11 through the outlet of the first input channel 20'. The hot air entering the through hole 29 flows in the first semicircular ring cavity, and heats the upper surface of the upper cover during the flow. When the hot air flows to the other end in the first semicircular ring cavity, the flowing hot air enters the hot air output structure 19 through the through hole 30 at the end and enters the hot air output structure 19 through the inlet of the first output channel 33 of the hot air output structure 19, and flows out through the outlet of the third output channel 15. The outflowing hot air flows back into the input port of the first high-temperature upper electrode module 6 connected to the outlet. The first high-temperature upper electrode module 6 receives the hot air. After the hot air is heated and accelerated again, it forms hot air for output, and thus circulates to ensure the temperature and speed of the hot air flowing in the first hot air ring 11, so that the area of ​​the upper surface of the upper cover where the first hot air ring 11 is located is evenly heated. Similarly, the principle of hot air circulation in the second hot air ring 16 is the same as that of the first hot air ring 11, and the present invention will not go into details. Therefore, through the two hot air input structures and hot air output structures set up in the present invention and the combination with the two high-temperature upper electrode modules, it is ensured that the hot air entering the first hot air ring 11 and the second hot air ring 16 continuously and evenly heats the upper surface of the upper cover, thereby reducing the temperature difference between the center and edge parts of the upper cover, and achieving the purpose of evenly heating the upper surface of the entire upper cover.

[0100] In some optional embodiments of the present invention, the total number of thermocouples 10 is at least eight. As shown in FIG7 , four holes for installing temperature-measuring thermocouples 10 are evenly distributed on each of the first hot air ring 11 and the second outer hot air ring 16. The temperature-measuring thermocouples 10 are installed in these holes. The adjustment of the left-right or up-and-down movement of the insert plate 25 is determined based on the temperatures measured by the eight temperature-measuring thermocouples 10. In other words, the air volume adjustment mechanism of the present invention requires adjusting the air volume of the hot air input structure by reading the temperatures measured by all thermocouples 10. The specific operating mechanism is illustrated using left-and-right movement as an example: The hot air system is activated on a semiconductor etching process device. The movement of the insert plate 25 in the insert plate adjustment structure 13 is determined by the temperatures of different areas of the upper cover surface read by the eight thermocouples 10 fixed to the first hot air ring 11 and the second hot air ring 16. Based on the temperature data read from all the thermocouples 10, the inlet area of ​​the first input channel 20 of the hot air input structure 12 is manually adjusted using a dichotomy method to adjust the heating effect. If the temperature readings of the four temperature measuring thermocouples 10 fixed on the first hot air ring 11 are higher than the temperature readings of the four temperature measuring thermocouples 10 on the second hot air ring 16, the plug plate 25 needs to be located at a position that blocks one-fourth of the entrance area of ​​the first input channel 20. The position of the plug plate 25 at this time is shown in Figure 8, where the measured value can be the average of the readings measured by the four thermocouples or a calculated value obtained through other operations. If the reading measurement value of the temperature measuring thermocouple 10 at the first hot air ring 11 is still higher than the reading measurement value of the temperature measuring thermocouple 10 at the second hot air ring 16, it is necessary to continue to push the plug plate 25 inward to one-eighth of the movement amount of the entrance of the entire first input channel 20. The position of the plug plate 25 at this time is shown in Figure 9. At this time, the plug plate 25 is located at a position blocking three-eighths of the entrance area of ​​the first input channel 20; if the temperature measurement value of the temperature measuring thermocouple set on the first hot air ring 11 is lower than the temperature measurement value of the temperature measuring thermocouple set on the second hot air ring 16, the plug plate 25 needs to be pushed inward to one-eighth of the movement amount of the entire first input channel 20. To obtain the reading measurement value, it is necessary to pull the plug plate 25 back one-eighth of the movement of the entire first input channel 20 entrance. The position of the plug plate 25 at this time is shown in Figure 10, that is, the plug plate 25 is pulled back. According to the temperature reading measurement values ​​of all thermocouples 10 on the first hot air ring 11 and the second hot air ring 16, the movement of the plug plate 25 at the entrance of the first input channel 20 of the hot air input structure 12 is adjusted until the upper surface temperature distribution of the upper cover 1 is relatively uniform. The position of the plug plate 25 at this time is recorded and fixed with screws 27 and plug plate fixings 26. It is worth noting that each adjustment action must be performed after the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7 stop working and the upper cover 1 cools to room temperature. After adjusting the position of the plug plate 25, the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7 are turned on, and then the next temperature measurement operation is carried out. After the position of the plug plate 25 is fixed, the etching machine can start working.During operation, the eight thermocouples 10 can monitor the upper surface temperature of the upper cover in real time, calculate the average value of the temperatures read by the eight thermocouples and compare it with the set temperature. When the average value exceeds the set temperature, the etcher automatically adjusts to reduce the power of the heating wires in the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7; and when the average value is lower than the set temperature, the etcher automatically increases the power of the heating wires in the first high-temperature upper electrode module 6 and the second high-temperature upper electrode module 7.

[0101] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The singular forms "a", "an", "the" and "the" used in the embodiments of the present invention and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0102] The foregoing description shows and describes several preferred embodiments of the present invention. However, as previously stated, it should be understood that the present invention is not limited to the form disclosed herein and should not be construed as excluding other embodiments. Rather, the present invention can be used in various other combinations, modifications, and environments and can be modified within the scope of the application concept described herein by the teachings above or by techniques or knowledge in the relevant field. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of the present invention are intended to be protected by the appended claims.

Claims

1. A hot air transfer duct, used in a hot air system of semiconductor process equipment, characterized in that: The hot air transfer air duct includes a hot air input structure and / or a hot air output structure; in The hot air input structure comprises: Input structure body; A first input channel is located in the input structural body, the inlet of the first input channel is located at one end of the input structural body, the first input channel extends from the inlet to the other end of the input structural body and bends downward, and the outlet of the first input channel is located at the lower side of the input structural body; a second input channel, located in the input structural body and below the first input channel, the inlet of the second input channel being located at the one end of the input structural body, the second input channel extending from the inlet to the other end of the input structural body and bending downward, the distance the second input channel extends to the other end of the input structural body being less than the distance the first input channel extends to the other end of the input structural body, and the outlet of the second input channel being located at the lower side of the input structural body; and / or The hot air output structure comprises: Output structure body; A first output channel is located in the output structure body, the entrance of the first output channel is located at the lower side of the output structure body, and the first output channel extends upward from the entrance; A second output channel is located in the output structure body, the entrance of the second output channel is located at the lower side of the output structure body, and the second output channel extends upward from the entrance; a third output channel, which is located in the output structural body and is connected to the first output channel and the second output channel; an outlet of the third output channel is located at one end of the output structural body; and a distance between an inlet of the first output channel and the one end of the output structural body is greater than a distance between an inlet of the second output channel and the one end of the output structural body.

2. The hot air transfer duct according to claim 1, characterized in that: Also includes: An air volume regulating module is arranged at the one end of the input structure body, and is used to regulate the air volume input to the first input channel and / or the second input channel.

3. The hot air transfer duct according to claim 2, characterized in that: The air volume adjustment module comprises: A plugboard fixing member, arranged on the hot air input structure; The plug plate is slidably connected to the plug plate fixing member to change the size of the entrance of the first input channel and / or the second input channel.

4. A hot air system for semiconductor process equipment, characterized in that: include: at least one hot air supply module; At least one pair of hot air transfer ducts according to any one of claims 1 to 3, the output port of the hot air providing module is connected to the inlet of the first input channel and the inlet of the second input channel of the hot air input structure, and the input port of the hot air providing module is connected to the outlet of the third input channel of the hot air output structure; A first hot air ring, arranged below the hot air transfer air duct, the first hot air ring being connected to the outlet of the first input channel of the hot air input structure and the inlet of the first output channel of the hot air output structure respectively; The second hot air ring is arranged around the outer side of the first hot air ring and below the hot air transfer air duct. The second hot air ring is respectively connected to the outlet of the second input channel of the hot air input structure and the inlet of the second output channel of the hot air output structure.

5. The hot air system according to claim 4, characterized in that: There are two pairs of hot air transfer air ducts, which are arranged opposite to each other; there are two hot air supply modules, which are arranged opposite to each other, each hot air supply module is arranged adjacent to or adjacent to the hot air transfer air duct, and the hot air supply module is located on the side of the two pairs of hot air transfer air ducts away from each other.

6. The hot air system according to claim 4, characterized in that: Also includes: At least one first temperature sensor, disposed on the first hot air ring; At least one second temperature sensor, disposed on the second hot air ring; When the temperature of the first hot air ring is higher than that of the second hot air ring, the entrance of the first input channel is reduced or the entrance of the second input channel is expanded; or When the temperature of the first hot air ring is lower than that of the second hot air ring, the entrance of the first input channel is enlarged or the entrance of the second input channel is reduced.

7. The hot air system according to claim 5, characterized in that: The first hot air ring includes two first semicircular annular cavities, and the upper surface of each of the first semicircular annular cavities includes two first openings, and the two first openings are respectively connected to the outlet of the first input channel of the hot air input structure of the hot air transfer air duct and the inlet of the first output channel of the hot air output structure; The second hot air ring includes two second semicircular annular cavities, and the upper surface of each of the second semicircular annular cavities includes two second openings, and the two second openings are respectively connected to the outlet of the second input channel of the hot air input structure of the hot air switching air duct and the inlet of the second output channel of the hot air output structure; and The two first semicircular annular cavities and the two second semicircular annular cavities are symmetrically arranged.

8. The hot air system according to claim 7, characterized in that: The two first openings of the first semicircular annular cavity are respectively arranged at two ends of the first semicircular annular cavity; The two second openings of the second semicircular ring cavity are respectively arranged at two ends of the second semicircular ring cavity.

9. The hot air system according to claim 4, characterized in that: The hot air supply module is a high-temperature upper electrode module, comprising a heating wire and an air amplifier connected to each other, wherein the heating wire is arranged at the input port of the hot air supply module; and the air amplifier is arranged at the output port of the hot air supply module.

10. A semiconductor process equipment, characterized in that: include: A process chamber, comprising a chamber body and an upper cover; A first coil group is arranged on the upper cover; A second coil group is arranged on the upper cover and surrounds the outer side of the first coil group; The hot air system according to any one of claims 4 to 9, wherein the first hot air ring and the second hot air ring of the hot air system are arranged on the upper cover, the first hot air ring is arranged between the first coil group and the second coil group, and the second hot air ring is arranged between the second coil group and the edge of the upper cover; The coil support is arranged above the first coil group and the second coil group and the first hot air ring and the second hot air ring, and is used to fix the first coil group and the second coil group.

11. The semiconductor process equipment according to claim 10, characterized in that: At least four avoidance holes are arranged on the coil support, and all the first openings and the second openings on the first hot air ring and the second hot air ring are arranged in the corresponding avoidance holes.

12. The semiconductor process equipment according to claim 10, characterized in that: The semiconductor process equipment is a plasma process equipment.