High-frequency module

Abstract

A high-frequency module (100) is used for supplying high-frequency signals to a radiation element (121). The high-frequency module (100) comprises a substantially rectangular dielectric substrate (130) having main surfaces (131, 132), an SiP module (105), a connector (150), and resins (171, 172). The SiP module (105) is mounted on the main surface (132) and supplies high-frequency signals to the radiation element (121). The connector (150) is mounted on the main surface (132) and can be connected to an external device. The connector (150) is disposed so as to be separated from the SiP module (105) in a first direction following the long side. The resin (171) is disposed between the dielectric substrate (130) and the SiP module (105). The resin (172) covers a side surface of the SiP module (105) facing the connector (150) and is disposed in a region between the SiP module (105) and the connector (150). The length (L1) from the SiP module (105) to a first-direction end in the resin (172) is equal to or greater than half of the length (L2) indicating the distance between the SiP module (105) and the connector (150).

Description

High-frequency module

[0001] The present disclosure relates to a high-frequency module, and more particularly to a technique for preventing peeling of an electronic circuit in a high-frequency module in which the electronic circuit is arranged on a substrate.

[0002] Japanese Patent Application Laid-Open Publication No. 2020-174172 (Patent Document 1) discloses an electronic element module in which electronic elements such as passive elements and active elements are arranged on one main surface of a rectangular substrate on which an antenna is arranged, and a connector for connecting to other equipment such as a mounting board is arranged on the end side of the main surface.

[0003] Japanese Patent Application Laid-Open No. 2020-174172

[0004] In the electronic element module configured as described above, a gap is formed between the electronic element and the connector. When the electronic element module is connected to another device such as a mounting board using a connector, force is applied to the substrate of the electronic element module when the connector is inserted. At this time, the gap between the electronic element and the connector causes the substrate to bend with the connector as a fulcrum, resulting in tensile stress acting between the electronic element and the substrate. This may cause the electronic element to peel off from the substrate.

[0005] The present disclosure has been made to solve such problems, and its purpose is to prevent the peeling of electronic circuits when the high-frequency module is assembled, in a high-frequency module having electronic circuits arranged on a substrate.

[0006] A high-frequency module according to the present disclosure is a module for supplying a high-frequency signal to a radiating element. The high-frequency module includes a flat dielectric substrate, an electronic circuit, a connector, a first resin, and a second resin. The dielectric substrate has a first surface and a second surface. The electronic circuit is mounted on the second surface of the dielectric substrate and configured to supply a high-frequency signal to the radiating element. The connector is mounted on the second surface of the dielectric substrate and is connectable to an external device. When viewed from above in a normal direction of the dielectric substrate, the dielectric substrate has a substantially rectangular shape with long and short sides. The connector is disposed spaced apart from the electronic circuit in a first direction along the long sides. The first resin is disposed between the dielectric substrate and the electronic circuit. The second resin covers a side of the electronic circuit facing the connector and is disposed in a region on the second surface between the electronic circuit and the connector. A first length of the second resin from the electronic circuit to an end in the first direction is at least half of a second length indicating the distance between the electronic circuit and the connector.

[0007] In the high-frequency module of the present disclosure, a first resin is disposed between the dielectric substrate and the electronic circuit, and a second resin is disposed so as to cover a wide area of ​​the region on the dielectric substrate between the electronic circuit and the connector. This configuration reduces stress acting between the electronic circuit and the dielectric substrate when the high-frequency module is assembled, thereby preventing the electronic circuit from peeling off.

[0008] 11 is a block diagram of a communication device to which a high-frequency module according to a first embodiment is applied. It is a plan view of the high-frequency module according to the first embodiment. It is a cross-sectional perspective view taken along line III-III of the high-frequency module of FIG. 2. It is a cross-sectional perspective view taken along line IV-IV of the high-frequency module of FIG. 2. It is a cross-sectional perspective view of a high-frequency module according to a first modified example. It is a diagram for explaining deflection when a force is applied to the high-frequency module. It is a diagram for explaining the amount of deflection due to differences in the dimensions of the fillet. It is a cross-sectional perspective view of a high-frequency module according to a second modified example. It is a plan view of the high-frequency module according to the second embodiment. It is a cross-sectional perspective view taken along line X-X of the high-frequency module of FIG. 9. It is a plan view of a high-frequency module according to a third modified example. It is a cross-sectional perspective view taken along line XII-XII of the high-frequency module of FIG. 11. It is a diagram for explaining a first example of a manufacturing process for a high-frequency module. It is a diagram for explaining a second example of a manufacturing process for a high-frequency module.

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated.

[0010] 1 is a block diagram of an example of a communication device 10 to which a high-frequency module 100 according to embodiment 1 is applied. The communication device 10 is, for example, a mobile terminal such as a mobile phone, a smartphone, or a tablet, or a personal computer with a communication function.

[0011] 1 , a communication device 10 includes a radio frequency module 100 and a BBIC 200 that constitutes a baseband signal processing circuit. The radio frequency module 100 includes an RFIC 110, which is an example of a power supply circuit, and an antenna device 120. The communication device 10 upconverts a signal transmitted from the BBIC 200 to the radio frequency module 100 into a radio frequency signal and radiates the signal from the antenna device 120, and downconverts the radio frequency signal received by the antenna device 120 and processes the signal in the BBIC 200.

[0012] The antenna device 120 of FIG. 1 has a configuration in which radiating elements 121 are arranged in a two-dimensional array. A high-frequency signal is supplied to the radiating elements 121 from the RFIC 110. For ease of explanation, FIG. 1 shows only the configurations corresponding to four of the multiple radiating elements 121 constituting the antenna device 120, and omits the configurations corresponding to the other radiating elements 121 having similar configurations. Note that the antenna device 120 does not necessarily have to be a two-dimensional array; the antenna device 120 may be formed with a single radiating element 121. Alternatively, the antenna device 120 may be a one-dimensional array in which multiple radiating elements 121 are arranged in a row. In this embodiment, the radiating element 121 is a patch antenna having a substantially square flat plate shape. Note that the shape of the radiating element 121 is not limited to a substantially square shape, and may be rectangular, polygonal, circular, elliptical, or the like.

[0013] The RFIC 110 includes switches 111A to 111D, 113A to 113D, and 117, power amplifiers 112AT to 112DT, low-noise amplifiers 112AR to 112DR, attenuators 114A to 114D, phase shifters 115A to 115D, a signal combiner / demultiplexer 116, a mixer 118, and an amplifier circuit 119.

[0014] When transmitting a high frequency signal, the switches 111A to 111D and 113A to 113D are switched to the side of the power amplifiers 112AT to 112DT, and the switch 117 is connected to the transmitting amplifier of the amplifier circuit 119. When receiving a high frequency signal, the switches 111A to 111D and 113A to 113D are switched to the side of the low noise amplifiers 112AR to 112DR, and the switch 117 is connected to the receiving amplifier of the amplifier circuit 119.

[0015] The signal transmitted from BBIC 200 is amplified by amplifier circuit 119 and up-converted by mixer 118. The up-converted transmission signal, which is a high-frequency signal, is split into four by signal combiner / splitter 116, passes through the corresponding signal paths, and is fed to different radiating elements 121, respectively. The directivity of antenna device 120 can be adjusted by individually adjusting the phase shift of phase shifters 115A to 115D arranged on each signal path. Furthermore, the gain of the high-frequency signal radiated from each radiating element 121 can be adjusted by adjusting attenuators 114A to 114D.

[0016] The received signals, which are high-frequency signals received by the radiating elements 121, are transmitted to the RFIC 110 and then passed through four different signal paths to be combined in the signal combiner / demultiplexer 116. The combined received signals are down-converted in the mixer 118, amplified in the amplifier circuit 119, and transmitted to the BBIC 200.

[0017] The RFIC 110 is formed as, for example, a one-chip integrated circuit component including the above circuit configuration. Alternatively, the devices (switches, power amplifiers, low-noise amplifiers, attenuators, phase shifters) corresponding to the respective radiating elements 121 in the RFIC 110 may be formed as one-chip integrated circuit components for each corresponding radiating element 121.

[0018] (Configuration of the High-Frequency Module) Next, the configuration of the high-frequency module 100 according to the first embodiment will be described in detail with reference to FIGS. 2 to 4. FIG. 2 is a plan view of the high-frequency module 100. FIG. 3 is a cross-sectional perspective view of the high-frequency module 100 taken along line III-III in FIG. 2. FIG. 4 is a cross-sectional perspective view of the high-frequency module taken along line IV-IV in FIG. 2. As shown in FIGS. 2 to 4, the thickness direction of the high-frequency module 100 is defined as the Z-axis direction, and planes perpendicular to the Z-axis direction are defined as the X-axis and the Y-axis. In each figure, the positive direction of the Z-axis may be referred to as the upper surface side, and the negative direction may be referred to as the lower surface side.

[0019] 2 to 4, the high-frequency module 100 includes, in addition to the radiating element 121, a SiP (System In Package) module 105 including an RFIC 110, a dielectric substrate 130, a ground electrode GND, a power supply wiring 140, and a connector 150.

[0020] The SiP module 105 is a circuit in which a PMIC (Power Management Integrated Circuit) 106 and other electronic elements 107 such as a power inductor are arranged on the same substrate and molded in addition to the RFIC 110. The SiP module 105 corresponds to the "electronic circuit" in this disclosure.

[0021] The dielectric substrate 130 may be, for example, a multilayer resin substrate formed by laminating multiple resin layers made of resin such as epoxy or polyimide, a multilayer resin substrate formed by laminating multiple resin layers made of liquid crystal polymer (LCP) having a lower dielectric constant, or a multilayer resin substrate formed by laminating multiple resin layers made of fluorine-based resin. Note that the dielectric substrate 130 does not necessarily have to have a multilayer structure and may be a single-layer substrate.

[0022] The dielectric substrate 130 has a substantially rectangular shape when viewed from above in the normal direction (Z-axis direction). In this specification, the long side direction of the dielectric substrate 130 is defined as the X-axis, and the short side direction is defined as the Y-axis. A ground electrode GND is arranged over the entire inner layer of the top surface 132 (the surface in the positive direction of the Z-axis) of the dielectric substrate 130. A radiating element 121 is arranged facing the ground electrode GND on the bottom surface 131 (the surface in the negative direction of the Z-axis) of the dielectric substrate 130. In the example of FIG. 3 , four radiating elements 121 are arranged in a row spaced apart from each other in the X-axis direction. The radiating elements 121 may be exposed on the surface of the dielectric substrate 130 or may be arranged on an inner layer of the dielectric substrate 130.

[0023] The SiP module 105 is mounted on the top surface 132 of the dielectric substrate 130 via solder bumps 160. A connector 150 for connecting the high-frequency module 100 to another device such as a mounting board is disposed at the end of the top surface 132 of the dielectric substrate 130 in the positive direction of the X axis. The connector 150 is disposed away from the SiP module 105 in the positive direction of the X axis.

[0024] A high frequency signal is transmitted to the radiating elements 121 from the SiP module 105 via the power supply wiring 140. The power supply wiring 140 passes from the solder bumps 160 for mounting the SiP module 105 through the ground electrode GND and is connected to the power supply point of each radiating element 121.

[0025] Resin 171 is disposed between dielectric substrate 130 and SiP module 105 as an underfill to fill the gap between them. Resin 171 is, for example, a thermosetting resin such as epoxy. Resin 171 may contain a filler such as silica particles. Resin 171 is used to prevent foreign matter from entering between dielectric substrate 130 and SiP module 105 and to increase the connection strength between dielectric substrate 130 and SiP module 105.

[0026] Furthermore, in the high-frequency module 100, a resin 172 is disposed in a region on the top surface 132 of the dielectric substrate 130 between the SiP module 105 and the connector 150. The resin 172 is disposed so as to cover the side of the SiP module 105 facing the connector 150 and the top surface 132 of the dielectric substrate 130. That is, the resin 172 functions as a fillet. The resin 172 is also a thermosetting resin like the resin 171. The resins 171 and 172 may be the same resin or different resins. Like the resin 171, the resin 172 may also contain a filler. The state of the filler in the resin 171 may be the same as or different from the state of the filler in the resin 172. The state of the filler inclusion refers to the filler inclusion conditions, and such conditions include the filler content, the shape of the filler, and / or the material of the filler. As will be described later, resin 172 is used to prevent peeling from dielectric substrate 130 at the end of SiP module 105 in the positive direction of the X axis.

[0027] In the X-axis direction, the end of resin 172 extends to a position closer to connector 150 than a position that is half the distance L2 between SiP module 105 and connector 150. More specifically, if the distance from the end face of SiP module 105 to the end of resin 172 is L1, resin 172 extends to a position where the ratio of L1 to L2 satisfies 1 / 2≦L1 / L2<2 / 3.

[0028] In the Y-axis direction, the resin 172 extends to the end of the long side of the dielectric substrate 130. Note that, like the resin 172A of the high-frequency module 100A of Modification 1 in Fig. 5 , the end in the Y-axis direction does not have to reach the long side of the dielectric substrate 130. In other words, the resin 172 extends to a position where it does not protrude beyond the long side of the dielectric substrate 130.

[0029] The position of the end of resin 172 may be determined based on the height of SiP module 105. In this case, if the maximum height from top surface 132 of SiP module 105 is L3, then distance L1 to the position of the end of resin 172 is greater than 1.0 times L3 and less than 1.4 times L3 (1.0<L1 / L3<1.4).

[0030] Furthermore, if the maximum height of the resin 172 from the top surface 132 of the portion that contacts the SiP module 105 is L4, the distance L1 to the position of the end of the resin 172 may be specified to be greater than 1.0 times L4 and less than 7.0 times L4 (1.0 < L1 / L4 < 7.0).

[0031] The above-described high-frequency module is connected to an external device via a connector. Because a gap is formed between the SiP module and the connector, when the high-frequency module is connected to another device, such as a mounting board, using the connector, force is applied to the dielectric substrate of the high-frequency module when the connector is inserted. At this time, the gap between the SiP module and the connector causes the substrate to bend with the connector acting as a fulcrum, resulting in tensile stress acting between the SiP module and the dielectric substrate. This can cause the SiP module to peel off from the dielectric substrate.

[0032] Therefore, in this embodiment, a fillet is formed on the SiP module side of the area between the SiP module and the connector using resin, thereby reducing the amount of deflection of the dielectric substrate and preventing the SiP module from peeling off from the dielectric substrate.

[0033] 6 is a schematic diagram for explaining deflection when a force is applied to the high-frequency module 100. The end of the dielectric substrate 130 in the negative direction of the X axis and the portion of the connector 150 were supported by fulcrums S1 and S2, respectively, and a simulation was performed to determine the amount of deflection d1 that occurs when a force is applied to the dielectric substrate 130 from the lower surface 131 in the direction of arrow AR1.

[0034] FIG. 7 is a diagram illustrating the amount of deflection resulting from different fillet dimensions in the resin 172. The dimension of the resin 172 in the X-axis direction is L1, and the dimension in the Z-axis direction is L4. The diagram shows the change in the amount of deflection when L1 is changed in four stages, a1, b1, c1, and d1, from smallest to largest, and when L4 is changed in three stages, a2, b2, and c2, from smallest to largest. More specifically, the deflection when L1 = a1 and L4 = a2 is used as the reference, and the degree of deflection reduction, i.e., the degree of improvement in product deformation, in each case is shown as ranks A, B, and C. The degree of improvement in deformation is greater for B than for C, and even greater for A. Furthermore, within the same rank, a rank marked with a "+" indicates a greater degree of improvement in deformation than a rank without a "+" sign.

[0035] 7, for both L1 and L4, the degree of reduction in the amount of deflection increases as the dimension increases, indicating that deflection is suppressed. This reduction in deflection reduces the stress generated between SiP module 105 and dielectric substrate 130, thereby preventing SiP module 105 from peeling off from dielectric substrate 130.

[0036] Although the above-described high-frequency module 100 has been described as having a configuration in which the radiating element 121 is disposed on the dielectric substrate 130, the radiating element 121 is not necessarily an essential component of the high-frequency module of the present disclosure. As in the high-frequency module 100B of Modification 2 shown in Fig. 8 , the radiating element 121 may be disposed on a substrate 135 different from the dielectric substrate 130, and the dielectric substrate 130 and the substrate 135 may be electrically connected. The substrate 135 may be, for example, the housing of the communication device 10, and the high-frequency module 100B may be connected to the housing on which the radiating element 121 is disposed.

[0037] "Resin 171" and "resin 172" in the first embodiment are examples of the "first resin" and "second resin" in the present disclosure. "L1," "L2," "L3," and "L4" in the first embodiment correspond to the "first length," "second length," "third length," and "fourth length," respectively, in the present disclosure.

[0038] Second Embodiment In a second embodiment, a configuration for preventing resin 172 from flowing to the vicinity of connector 150 on dielectric substrate 130 will be described.

[0039] 9 and 10 are diagrams illustrating a high-frequency module 100C according to Embodiment 2. Fig. 9 is a plan view of the high-frequency module 100C. Fig. 10 is a cross-sectional perspective view of the high-frequency module 100C taken along line XX of Fig. 9.

[0040] In the high-frequency module 100C, a recess 180 extending in the Y-axis direction is formed on the upper surface 132 of the dielectric substrate 130 at a position between the SiP module 105 and the connector 150. When the resin 172 is arranged on the dielectric substrate 130, the resin 172 flowing on the substrate is retained in the recess 180, thereby preventing the resin 172 from coming excessively close to the connector 150.

[0041] If resin 172 is positioned close to connector 150, resin 172 may interfere with components of the other device, preventing proper connection of the high-frequency module when connecting the high-frequency module to other device using connector 150. Therefore, by defining the position of the end of resin 172 in the X-axis direction using recess 180, poor connection of connector 150 can be suppressed.

[0042] As described in embodiment 1, the position of the recess 180 on the dielectric substrate 130 is formed at a position that is at least 1 / 2 and less than 2 / 3 of the distance L2 between the SiP module 105 and the connector 150 from the side of the SiP module 105.

[0043] (Variation 3) In the above-described high-frequency module 100C, a configuration has been described in which a recess formed on the dielectric substrate 130 is used to suppress the flow of resin 172 toward the vicinity of connector 150. In Variation 3, a configuration will be described in which a protrusion formed on the dielectric substrate 130 is used to suppress the flow of resin 172 toward the vicinity of connector 150.

[0044] 11 and 12 are diagrams illustrating a high-frequency module 100D according to Modification 3. Fig. 11 is a plan view of the high-frequency module 100D. Fig. 12 is a cross-sectional perspective view of the high-frequency module 100C of Fig. 11 taken along line XII-XII.

[0045] In the high-frequency module 100D, a convex portion 185 extending in the Y-axis direction is formed on the upper surface 132 of the dielectric substrate 130 at a position between the SiP module 105 and the connector 150. When the resin 172 is disposed on the dielectric substrate 130, the resin 172 flowing on the substrate is blocked by the convex portion 185, thereby preventing the resin 172 from coming excessively close to the connector 150.

[0046] In the configuration of high-frequency module 100D, too, by defining the position of the end of resin 172 in the X-axis direction by convex portion 185, it is possible to suppress poor connection of connector 150. Note that modified examples 2 and 3 may be used together, and for example, a configuration may be possible in which convex portion 185 is disposed in the region between concave portion 180 and connector 150.

[0047] [Manufacturing Process] Generally, when manufacturing a high-frequency module, a method is adopted in which multiple modules are formed on the same substrate and then separated into individual modules by dicing, etc. In this case, if fillets are formed using resin, as in the high-frequency module of the present embodiment, the resin may flow into adjacent modules, resulting in the modules being connected to each other by the resin.

[0048] The following describes a method for preventing resin from flowing into adjacent modules during the manufacturing process of a high-frequency module.

[0049] 13 is a diagram for explaining a first example of a manufacturing process for a high frequency module, in which the manufacturing process for the dielectric substrate 130 is omitted.

[0050] First, as shown in step (a), the SiP module 105 and the connector 150 are mounted on a dielectric substrate 130. Here, the dashed line 190 in step (a) indicates the final outer shape of the high-frequency module.

[0051] Next, in step (b), recesses 181 and 182 are formed along portions of dielectric substrate 130 in the high-frequency module that correspond to the long sides. As described in the second embodiment, recess 180 is also formed between SiP module 105 and connector 150. At this time, recesses 181 and 182 along the long sides are formed to be longer than the actual length of the long sides.

[0052] In step (c), resin 171 is applied between SiP module 105 and dielectric substrate 130, and resin 172 is applied to the region between SiP module 105 and connector 150. At this time, pre-formed recesses 180 to 182 allow resin 172 to be confined within a predetermined region, thereby preventing the resin from flowing to adjacent modules.

[0053] Thereafter, in step (d), the outer periphery of the dielectric substrate 130 is cut to obtain the high-frequency module 100C.

[0054] Second Example FIG. 14 is a diagram for explaining a second example of the manufacturing process for a high frequency module.

[0055] First, in step (a), the SiP module 105 and the connector 150 are mounted on the dielectric substrate 130 in the same manner as in the first example.

[0056] Next, in step (b), a recess 180 is formed between the SiP module 105 and the connector 150, and recesses 183 and 184 are formed along the long side in the region between the SiP module 105 and the long side. Note that the recesses 183 and 184 are not formed over the entire long side of the dielectric substrate 130, but are formed only in the region where the resin 172 is to be applied.

[0057] In step (c), resin 171 is applied between SiP module 105 and dielectric substrate 130, and resin 172 is applied to the region between SiP module 105 and connector 150. In this process, resin 172 can also be confined within the region surrounded by recesses 180, 183, and 184 and SiP module 105, thereby preventing the resin from flowing to adjacent modules.

[0058] Thereafter, in step (d), the outer periphery of the dielectric substrate 130 is cut to obtain the high-frequency module 100E.

[0059] In the manufacturing processes of the first and second examples described above, the case where recesses are formed has been described, but protrusions may be formed instead of recesses, as in Modification Example 3. Furthermore, the configuration is not limited to using only one of the recesses and protrusions, and a configuration in which both recesses and protrusions are formed may also be used. For example, recesses and protrusions may be formed in parallel, or recesses or protrusions may be selectively formed by switching between them depending on the location.

[0060] Aspects It will be understood by those skilled in the art that the exemplary embodiments described above are examples of the following aspects.

[0061] (Item 1) A high-frequency module according to one aspect is a module for supplying a high-frequency signal to a radiating element. The high-frequency module includes a flat dielectric substrate, an electronic circuit, a connector, a first resin, and a second resin. The dielectric substrate has a first surface and a second surface. The electronic circuit is mounted on the second surface of the dielectric substrate and configured to supply a high-frequency signal to the radiating element. The connector is mounted on the second surface of the dielectric substrate and is connectable to an external device. When viewed from above in a normal direction of the dielectric substrate, the dielectric substrate has a substantially rectangular shape with long and short sides. The connector is disposed spaced apart from the electronic circuit in a first direction along the long sides. The first resin is disposed between the dielectric substrate and the electronic circuit. The second resin covers a side of the electronic circuit facing the connector and is disposed in a region on the second surface between the electronic circuit and the connector. A first length of the second resin from the electronic circuit to an end in the first direction is at least half of a second length indicating the distance between the electronic circuit and the connector.

[0062] (Item 2) In the high-frequency module described in item 1, the first length is shorter than two-thirds of the second length.

[0063] (Item 3) In the high-frequency module described in item 1, when the maximum height of the electronic circuit from the second surface is defined as a third length, the first length is greater than 1.0 times the third length and less than 1.4 times the third length.

[0064] (4) In the high-frequency module described in 1, if the maximum length in the normal direction of the part of the second resin that contacts the electronic circuit is defined as a fourth length, the first length is greater than 1.0 times the fourth length and less than 7.0 times the fourth length.

[0065] (Item 5) In the high-frequency module described in any one of items 1 to 4, a recess extending in a second direction intersecting the first direction is formed on the second surface between the end of the second resin in the first direction and the connector.

[0066] (Item 6) In the high-frequency module described in any one of items 1 to 4, a convex portion extending in a second direction intersecting the first direction is formed between the end of the second resin on the second surface in the first direction and the connector.

[0067] (7) In the high-frequency module according to any one of the first to sixth aspects, the second resin does not protrude beyond the long sides of the dielectric substrate.

[0068] (Item 8) In the high-frequency module according to any one of items 1 to 7, the radiating element is disposed closer to the first surface than the second surface of the dielectric substrate.

[0069] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, not by the description of the above embodiments, and is intended to include all modifications within the meaning and scope of the claims.

[0070] 10 Communication device, 100 to 100E High frequency module, 105 SiP module, 106 PMIC, 107 Electronic element, 110 RFIC, 111A to 111D, 113A to 113D, 117 Switch, 112AR to 112DR Low noise amplifier, 112AT to 112DT Power amplifier, 114A to 114D Attenuator, 115A to 115D Phase shifter, 116 Signal combiner / demultiplexer, 118 Mixer, 119 Amplifier circuit, 120 Antenna device, 121 Radiating element, 130 Dielectric substrate, 131, 132 Main surface, 135 Substrate, 140 Power supply wiring, 150 Connector, 160 Solder bump, 171, 172, 172A Resin, 180 to 184 Recess, 185 Convex part, 200 BBIC, GND ground electrode, S1, S2 fulcrum.

Claims

1. A high-frequency module for supplying a high-frequency signal to a radiating element, comprising: a flat dielectric substrate having a first surface and a second surface; an electronic circuit mounted on the second surface of the dielectric substrate and configured to supply a high-frequency signal to the radiating element; and a connector mounted on the second surface and connectable to an external device; when viewed in a plan view from a normal direction of the dielectric substrate, the dielectric substrate has a generally rectangular shape having long sides and short sides; the connector is disposed at a distance from the electronic circuit in a first direction along the long sides; the high-frequency module further comprises: a first resin disposed between the dielectric substrate and the electronic circuit; and a second resin covering a side of the electronic circuit facing the connector and disposed in a region on the second surface between the electronic circuit and the connector; and a first length of the second resin from the electronic circuit to an end in the first direction is equal to or greater than half of a second length indicating the distance between the electronic circuit and the connector.

2. The high frequency module according to claim 1, wherein the first length is shorter than 2 / 3 of the second length.

3. The high frequency module according to claim 1, wherein, assuming that a maximum height of said electronic circuit from said second surface is a third length, said first length is greater than 1.0 times and smaller than 1.4 times said third length.

4. The high-frequency module according to claim 1, wherein, when the maximum length in the normal direction of the portion of the second resin that contacts the electronic circuit is defined as a fourth length, the first length is greater than 1.0 times and smaller than 7.0 times the fourth length.

5. A high-frequency module as described in any one of claims 1 to 4, wherein a recess extending in a second direction intersecting the first direction is formed on the second surface between the end of the second resin in the first direction and the connector.

6. A high-frequency module as described in any one of claims 1 to 4, wherein a convex portion extending in a second direction intersecting the first direction is formed on the second surface between the end of the second resin in the first direction and the connector.

7. A high-frequency module according to any one of claims 1 to 6, wherein the second resin does not protrude beyond the long side of the dielectric substrate.

8. The high-frequency module according to any one of claims 1 to 7, wherein the radiating element is disposed closer to the first surface than the second surface of the dielectric substrate.

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