Solar cell and preparation method therefor, coating device and solar cell production system

Abstract

The present invention provides a solar cell and a preparation method therefor, a coating device and a solar cell production system. The solar cell (100) comprises a first transparent conductive thin film (20), the first transparent conductive thin film (20) comprising a first transparent conductive layer (21), a first sandwich thin film (22), and a second transparent conductive layer (23) which are sequentially stacked, and the material of the first sandwich thin film (22) being different from that of the first transparent conductive layer (21).

Description

Solar cell and preparation method thereof, coating device and solar cell production system

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on July 18, 2023, with application number 202310884652.5 and invention name “Solar cells and their preparation methods, coating devices and solar cell production systems”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, a coating device and a solar cell production system. Background Art

[0003] When manufacturing solar cells, a transparent conductive (TCO) film is usually formed on the substrate to be coated. Currently, indium tin oxide (ITO) is commonly used as the material for this transparent conductive film. As solar cell production capacity increases, the demand for indium is also increasing. However, the current global indium production capacity and reserves are unable to support the large-scale production of solar cells, and the high cost of indium leads to high costs for solar cells, which severely limits their application and popularity.

[0004] Summary of the Invention

[0005] Based on this, it is necessary to provide a solar cell that reduces the amount of indium used.

[0006] In addition, it is also necessary to provide a method for preparing the above-mentioned solar cell.

[0007] In addition, it is also necessary to provide a coating device and a solar cell production system including the coating device.

[0008] At least one embodiment of the present invention provides a solar cell, comprising:

[0009] solar cell precursors; and

[0010] A first transparent conductive film is provided on the solar cell precursor;

[0011] The first transparent conductive film includes a first transparent conductive layer, a first sandwich film and a second transparent conductive layer stacked in sequence on the solar cell precursor. The material of the first transparent conductive layer includes indium tin oxide. The material of the first sandwich film is different from that of the first transparent conductive layer. The material of the second transparent conductive layer also includes indium tin oxide.

[0012] In some embodiments, the first sandwich film has a structure of two or more layers.

[0013] In some embodiments, the first sandwich film includes a first sandwich layer disposed on the first transparent conductive layer and a second sandwich layer disposed on the first sandwich layer, the materials of the first sandwich layer and the second sandwich layer are selected from one of zinc aluminum oxide and tin fluoride oxide, and the materials of the first sandwich layer and the second sandwich layer are different.

[0014] In some embodiments, the solar cell further comprises:

[0015] a second transparent conductive film, wherein the second transparent conductive film and the first transparent conductive film are respectively disposed on two opposite surfaces of the solar cell precursor;

[0016] The second transparent conductive film includes a third transparent conductive layer, a second sandwich film and a fourth transparent conductive layer stacked in sequence on the solar cell precursor. The material of the third transparent conductive layer includes indium tin oxide. The material of the second sandwich film is different from that of the third transparent conductive layer. The material of the fourth transparent conductive layer includes indium tin oxide.

[0017] At least one embodiment of the present invention provides a method for preparing the aforementioned solar cell, comprising the following steps:

[0018] preparing the first transparent conductive layer on the solar cell precursor;

[0019] preparing the first sandwich film on the first transparent conductive layer; and

[0020] The second transparent conductive layer is prepared on the first sandwich film, thereby obtaining the first transparent conductive film.

[0021] In some embodiments, the first transparent conductive layer and the second transparent conductive layer are prepared by a physical vapor deposition process, and the first sandwich film is prepared by a chemical vapor deposition process.

[0022] At least one embodiment of the present invention provides a film coating device, comprising:

[0023] A first physical vapor deposition chamber, wherein the first physical vapor deposition chamber is used to prepare the first transparent conductive layer;

[0024] a chemical vapor deposition chamber, the chemical vapor deposition chamber being connected to the first physical vapor deposition chamber, the chemical vapor deposition chamber being used to prepare the first sandwich film; and

[0025] A second physical vapor deposition chamber is connected to the chemical vapor deposition chamber, and the second physical vapor deposition chamber is used to prepare the second transparent conductive layer.

[0026] In some embodiments, the chemical vapor deposition chamber includes a first chemical vapor deposition chamber and a second chemical vapor deposition chamber that are interconnected, the first chemical vapor deposition chamber is connected to the first physical vapor deposition chamber, and the second chemical vapor deposition chamber is connected to the second physical vapor deposition chamber.

[0027] In some embodiments, the first physical vapor deposition chamber includes a first physical vapor deposition sub-chamber, a first isolation sub-chamber, and a second physical vapor deposition sub-chamber that are interconnected, and the first isolation sub-chamber is disposed between the first physical vapor deposition sub-chamber and the second physical vapor deposition sub-chamber; and / or

[0028] The second physical vapor deposition chamber includes a third physical vapor deposition sub-chamber, a second isolation sub-chamber, and a fourth physical vapor deposition sub-chamber that are interconnected, and the second isolation sub-chamber is arranged between the third physical vapor deposition sub-chamber and the fourth physical vapor deposition sub-chamber; and / or

[0029] The coating device further includes a first connecting chamber, the first connecting chamber being disposed between the first physical vapor deposition chamber and the chemical vapor deposition chamber, the first connecting chamber being connected to the first physical vapor deposition chamber and the chemical vapor deposition chamber; and / or

[0030] The coating device further includes a first cache chamber, which is arranged on a side of the first physical vapor deposition chamber away from the chemical vapor deposition chamber, and the first cache chamber is connected to the first physical vapor deposition chamber; and / or

[0031] The coating device further includes a first vacuum chamber, which is disposed between the chemical vapor deposition chamber and the second physical vapor deposition chamber, and the first vacuum chamber is connected to the chemical vapor deposition chamber and the second physical vapor deposition chamber.

[0032] At least one embodiment of the present invention provides a solar cell production system including the above-mentioned coating device.

[0033] The present invention changes a traditional single-layer transparent conductive film into a multi-layer structure, that is, the first transparent conductive film is configured as a multi-layer structure including a first transparent conductive layer, a first sandwich film, and a second transparent conductive layer. Since the material of the first transparent conductive layer includes indium tin oxide, and the material of the first sandwich film is different from that of the first transparent conductive layer, the present invention can reduce the amount of indium used under the condition that the thickness of the transparent conductive film is the same, thereby effectively reducing the production cost of solar cells and promoting the application and popularization of solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic structural diagram of a solar cell provided by the present invention;

[0035] FIG2 is a flow chart of the preparation of a solar cell provided by the present invention;

[0036] FIG3 is a schematic structural diagram of an existing coating device;

[0037] FIG4 is a schematic structural diagram of a coating device provided by the present invention;

[0038] FIG5 is a process flow chart of preparing a first transparent conductive film and a second transparent conductive film on a solar cell precursor using the coating apparatus in FIG4 .

[0039] Reference numerals: 100 - solar cell; 10 - solar cell precursor; 11 - silicon wafer; 12 - first intrinsic amorphous silicon film; 13 - N-type amorphous silicon film; 14 - second intrinsic amorphous silicon film; 15 - P-type amorphous silicon film; 20 - first transparent conductive film; 21 - first transparent conductive layer; 22 - first sandwich film; 221 - first sandwich layer; 222 - second sandwich layer; 23 - second transparent conductive layer; 30 - second transparent conductive film; 40 - electrode; 150 - existing coating device; 200 - coating device; 210 - first physical vapor deposition chamber; 2101 - first physical vapor deposition sub-chamber; 2102 - first isolation sub-chamber; 21 03-Second physical vapor deposition chamber; 220-Chemical vapor deposition chamber; 2201-First chemical vapor deposition chamber; 2202-Second chemical vapor deposition chamber; 230-Second physical vapor deposition chamber; 2301-Third physical vapor deposition chamber; 2302-Second isolation chamber; 2303-Fourth physical vapor deposition chamber; 240-First connecting chamber; 241-Second connecting chamber; 250-First vacuum chamber; 260-Heating chamber; 270-Second vacuum chamber; 271-Third connecting chamber; 272-First cache chamber; 280-Second cache chamber; 290-Second venting chamber; 291-Fourth connecting chamber. DETAILED DESCRIPTION

[0040] To facilitate understanding of the present invention, the present invention will be described more fully below with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the accompanying drawings. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this invention pertains. The terms used herein in the specification of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0042] 1 , at least one embodiment of the present invention provides a solar cell 100 . The solar cell 100 includes a solar cell precursor 10 , a first transparent conductive film 20 , a second transparent conductive film 30 , and an electrode 40 .

[0043] In one embodiment, the solar cell precursor 10 includes a silicon wafer 11, a first intrinsic amorphous silicon film 12 and an N-type amorphous silicon film 13 sequentially stacked on one surface of the silicon wafer 11, and a second intrinsic amorphous silicon film 14 and a P-type amorphous silicon film 15 sequentially stacked on the other surface of the silicon wafer 11. In one embodiment, the silicon wafer 11 can be a textured silicon wafer.

[0044] In one embodiment, the first transparent conductive film 20 is disposed on the N-type amorphous silicon film 13. In one embodiment, the first transparent conductive film 20 includes a first transparent conductive layer 21, a first sandwich film 22, and a second transparent conductive layer 23, which are sequentially stacked on the N-type amorphous silicon film 13.

[0045] In one embodiment, the material of the first transparent conductive layer 21 includes indium tin oxide (ITO). In one embodiment, the thickness of the first transparent conductive layer 21 is 5 nm to 15 nm.

[0046] In one embodiment, the first sandwich film 22 includes a first sandwich layer 221 disposed on the first transparent conductive layer 21, and a second sandwich layer 222 disposed on the first sandwich layer 221. In one embodiment, the materials of the first sandwich layer 221 and the second sandwich layer 222 are selected from one of aluminum zinc oxide (AZO) and fluorine tin oxide (FTO), and the first sandwich layer 221 and the second sandwich layer 222 are different materials. In one embodiment, the thickness of the first sandwich layer 221 is 38 nm to 39 nm, and the thickness of the second sandwich layer 222 is 38 nm to 39 nm.

[0047] It should be noted that the first sandwich film 22 of the present invention is not limited to having only two layers, namely, the first sandwich layer 221 and the second sandwich layer 222. In another embodiment, the first sandwich film 22 may have more than two layers, such as three or four layers. In other words, the first sandwich film 22 may include other sandwich layers in addition to the first sandwich layer 221 and the second sandwich layer 222.

[0048] In one embodiment, the material of the second transparent conductive layer 23 includes indium tin oxide. In one embodiment, the thickness of the second transparent conductive layer 23 is 5 nm to 10 nm.

[0049] In one embodiment, the second transparent conductive film 30 is disposed on the P-type amorphous silicon film 15. In one embodiment, the second transparent conductive film 30 includes a third transparent conductive layer (not shown), a second sandwich film (not shown), and a fourth transparent conductive layer (not shown) sequentially stacked on the P-type amorphous silicon film 15.

[0050] In one embodiment, the material of the third transparent conductive layer includes indium tin oxide (ITO).

[0051] In one embodiment, the second sandwich film includes a third sandwich layer disposed on the third transparent conductive layer and a fourth sandwich layer disposed on the third sandwich layer. In one embodiment, the third and fourth sandwich layers are made of a material selected from aluminum zinc oxide (AZO) and fluorine tin oxide (FTO), and the third and fourth sandwich layers are made of different materials.

[0052] It should be noted that the second sandwich film of the present invention is not limited to a structure consisting of only the third and fourth sandwich layers. In another embodiment, the second sandwich film may have a structure having more than two layers, such as three or four layers. In other words, the second sandwich film may include other sandwich layers in addition to the third and fourth sandwich layers.

[0053] In one embodiment, the material of the fourth transparent conductive layer includes indium tin oxide.

[0054] In another embodiment, the second transparent conductive film 30 also has a single-layer structure. That is, the second transparent conductive film 30 does not have the aforementioned laminated structure, but rather a single-layer structure. In one embodiment, when the second transparent conductive film 30 has a single-layer structure, the material of the second transparent conductive film 30 includes indium tin oxide. In one embodiment, when the second transparent conductive film 30 has a single-layer structure, the thickness of the second transparent conductive film 30 may be 100 nm to 120 nm. In a specific embodiment, when the second transparent conductive film 30 has a single-layer structure, the thickness of the second transparent conductive film 30 may be 110 nm.

[0055] In one embodiment, the electrode 40 can be disposed on the first transparent conductive film 20 or on the second transparent conductive film 30. Disposing the electrode 40 on the second transparent conductive film 30, i.e., disposing the electrode 40 on the back side of the solar cell 100, can reduce light obstruction compared to conventional solar cells that dispose electrodes on the front side, thereby improving the utilization rate of light by the solar cell 100 and thereby increasing the conversion efficiency of the solar cell 100.

[0056] In one embodiment, the electrode 40 may be a metal electrode. In one embodiment, the metal electrode may be a copper electrode.

[0057] The present invention replaces a traditional single-layer transparent conductive film with a multi-layer structure. Specifically, the first transparent conductive film 20 is configured as a multi-layer structure including a first transparent conductive layer 21, a first sandwich film 22, and a second transparent conductive layer 23. Since the first transparent conductive layer 21 is made of indium tin oxide, and the first sandwich film 22 and the first transparent conductive layer 23 are made of different materials, the present invention can reduce the amount of indium used while maintaining the same thickness of the transparent conductive film, thereby effectively reducing the production cost of the solar cell 100 and promoting the application and popularization of the solar cell 100.

[0058] The inventors of this case previously used physical vapor deposition (PVD) to prepare the aforementioned first transparent conductive film 20, namely, the aforementioned first transparent conductive layer 21, the aforementioned first sandwich film 22, and the aforementioned second transparent conductive layer 23. However, the resulting first transparent conductive film 20 had poor uniformity and density, resulting in poor reliability and stability of the resulting solar cell 100. To address the issues of uniformity and density of the first transparent conductive film 20, the inventors of this case have provided a method for preparing the aforementioned solar cell 100, referring to both Figures 1 and 2. The method comprises the following steps:

[0059] Step S11 : preparing a first transparent conductive layer 21 and a second transparent conductive film 30 on two opposite surfaces of the solar cell precursor 10 .

[0060] In one embodiment, the solar cell precursor 10 includes a silicon wafer 11, a first intrinsic amorphous silicon film 12 and an N-type amorphous silicon film 13 sequentially stacked on one surface of the silicon wafer 11, and a second intrinsic amorphous silicon film 14 and a P-type amorphous silicon film 15 sequentially stacked on the other surface of the silicon wafer 11. In one embodiment, the silicon wafer 11 can be a textured silicon wafer.

[0061] Specifically, the first transparent conductive layer 21 is formed on the N-type amorphous silicon film 13 by using a physical vapor deposition process, and the second transparent conductive film 30 is formed on the P-type amorphous silicon film 15 by using a physical vapor deposition process.

[0062] In one embodiment, the material of the first transparent conductive layer 21 includes indium tin oxide (ITO). In one embodiment, the thickness of the first transparent conductive layer 21 is 5 nm to 15 nm.

[0063] In one embodiment, the material of the second transparent conductive film 30 includes indium tin oxide. In one embodiment, the thickness of the second transparent conductive film 30 may be 100 nm to 120 nm. In a specific embodiment, the thickness of the second transparent conductive film 30 may be 110 nm.

[0064] Step S12: preparing a first sandwich layer 221 on the first transparent conductive layer 21 .

[0065] Specifically, the first sandwich layer 221 is prepared on the first transparent conductive layer 21 by using a chemical vapor deposition process.

[0066] In one embodiment, the material of the first sandwich layer 221 is selected from one of aluminum zinc oxide (AZO) and fluorine tin oxide (FTO). In one embodiment, the thickness of the first sandwich layer 221 is 38 nm to 39 nm.

[0067] Step S13: preparing a second sandwich layer 222 on the first sandwich layer 221 to obtain a first sandwich film 22.

[0068] Specifically, the second sandwich layer 222 is prepared on the first sandwich layer 221 by using a chemical vapor deposition process, thereby obtaining the first sandwich film 22 including the first sandwich layer 221 and the second sandwich layer 222 .

[0069] In one embodiment, the material of the second sandwich layer 222 is selected from the other of zinc aluminum oxide and tin fluoride oxide, and the materials of the first sandwich layer 221 and the second sandwich layer 222 are different. In one embodiment, the thickness of the second sandwich layer 222 is 38nm-39nm.

[0070] Step S14 : preparing a second transparent conductive layer 23 on the second sandwich layer 222 , thereby obtaining a first transparent conductive film 20 .

[0071] Specifically, the second transparent conductive layer 23 is prepared on the second sandwich layer 222 by using a physical vapor deposition process, thereby obtaining the first transparent conductive film 20 .

[0072] In one embodiment, the material of the second transparent conductive layer 23 includes indium tin oxide. In one embodiment, the thickness of the second transparent conductive layer 23 is 5 nm to 10 nm.

[0073] It can be understood that the first transparent conductive film 20 includes the first transparent conductive layer 21 , the first sandwich film 22 and the second transparent conductive layer 23 .

[0074] Step S15 : preparing an electrode 40 on the first transparent conductive film 20 and / or the second transparent conductive film 30 to obtain a solar cell 100 .

[0075] Among them, the electrode 40 is prepared on the second transparent conductive film 30, that is, the electrode 40 is prepared on the back side of the solar cell 100. Compared with the traditional solar cell in which the electrode is prepared on the front side, the solar cell 100 prepared by the present invention can reduce the obstruction of light, thereby improving the utilization rate of light by the solar cell 100, thereby improving the conversion efficiency of the solar cell 100.

[0076] In one embodiment, the electrode 40 may be a metal electrode. In one embodiment, the metal electrode may be a copper electrode.

[0077] Specifically, the electrode 40 may be prepared on the second transparent conductive film 30 by screen printing.

[0078] It should be noted that the first sandwich film 22 of the present invention is not limited to having only two layers, namely, the first sandwich layer 221 and the second sandwich layer 222. In another embodiment, the first sandwich film 22 may have more than two layers, such as three or four layers. That is, the first sandwich film 22 may include other sandwich layers in addition to the first sandwich layer 221 and the second sandwich layer 222. In one embodiment, the other sandwich layers may be produced using a chemical vapor deposition process.

[0079] The preparation method provided by the present invention adopts a chemical vapor deposition process to prepare the first sandwich layer 221 on the first transparent conductive layer 21, and adopts a chemical vapor deposition process to prepare the second sandwich layer 222 on the first sandwich layer 221. This can avoid damage to the first sandwich layer 221 caused by the previous physical vapor deposition process when preparing the second sandwich layer 222, thereby effectively ensuring that the contact surface between the first sandwich layer 221 and the second sandwich layer 222 is not damaged, improving the uniformity and density of the first transparent conductive film 20, and thus improving the reliability and stability of the prepared solar cell 100.

[0080] In one embodiment, when the second transparent conductive film 30 is a multi-layer structure, the preparation method of the second transparent conductive film 30 can refer to the preparation method of the first transparent conductive film 20 , which will not be described in detail here.

[0081] Referring to FIG3 , the inventors of this application previously prepared the aforementioned first transparent conductive film 20, namely, the aforementioned first transparent conductive layer 21, the aforementioned first sandwich film 22, and the aforementioned second transparent conductive layer 23. Because the aforementioned first transparent conductive layer 21 was prepared using a physical vapor deposition process, the aforementioned first sandwich film 22 was prepared using a chemical vapor deposition process, and the aforementioned second transparent conductive layer 23 was prepared using a physical vapor deposition process, three conventional coating apparatuses 150 were required to complete the coating process, resulting in poor stability and reliability. To address the problem of poor coating stability and reliability, referring to both FIG1 and FIG4 , the inventors of this application have further provided an apparatus for preparing the aforementioned first transparent conductive film 20 and second transparent conductive film 30 in the aforementioned solar cell 100, namely, a coating apparatus 200. Specifically, the coating apparatus 200 can be used to prepare the aforementioned first transparent conductive film 20 and second transparent conductive film 30.

[0082] In one embodiment, the coating apparatus 200 includes a first physical vapor deposition chamber 210 , a chemical vapor deposition chamber 220 , and a second physical vapor deposition chamber 230 .

[0083] In one embodiment, the first physical vapor deposition chamber 210 is connected to the chemical vapor deposition chamber 220. The first physical vapor deposition chamber 210 is used to form a first transparent conductive layer 21 on one surface of a solar cell precursor 10. In actual production, the solar cell precursor 10 is transported to the first physical vapor deposition chamber 210, and the first transparent conductive layer 21 is formed in the first physical vapor deposition chamber 210 using a method such as magnetron sputtering.

[0084] In one embodiment, the first PVD chamber 210 includes a first PVD chamber 2101, a first isolation chamber 2102, and a second PVD chamber 2103, which are interconnected, and the first isolation chamber 2102 is disposed between the first PVD chamber 2101 and the second PVD chamber 2103. The first PVD chamber 2101 is used to form a second transparent conductive thin film intermediate on the other surface of the solar cell precursor 10, and the second PVD chamber 230 is used to form the first transparent conductive layer 21.

[0085] In one embodiment, the material of the first transparent conductive layer 21 includes indium tin oxide (ITO). In one embodiment, the thickness of the first transparent conductive layer 21 is 5 nm to 15 nm.

[0086] In one embodiment, the material of the second transparent conductive film intermediate includes indium tin oxide.

[0087] In one embodiment, the solar cell precursor 10 includes a silicon wafer 11, a first intrinsic amorphous silicon film 12 and an N-type amorphous silicon film 13 sequentially stacked on one surface of the silicon wafer 11, and a second intrinsic amorphous silicon film 14 and a P-type amorphous silicon film 15 sequentially stacked on the other surface of the silicon wafer 11. In one embodiment, the silicon wafer 11 may be a textured silicon wafer. The first transparent conductive layer 21 is disposed on the N-type amorphous silicon film 13, and the second transparent conductive film intermediate is disposed on the P-type amorphous silicon film 15.

[0088] In one embodiment, a first residual gas analysis (RGA) device is provided in the first PVD chamber 210. The RGA device is used to monitor and analyze gases such as water vapor in the first PVD chamber 210 to better monitor the preparation results of the second transparent conductive film intermediate and the first transparent conductive layer 21.

[0089] In one embodiment, the chemical vapor deposition chamber 220 includes a first chemical vapor deposition chamber 2201 and a second chemical vapor deposition chamber 2202 communicating with the first chemical vapor deposition chamber 2201. In one embodiment, the chemical vapor deposition chamber 220 is used to prepare a first sandwich film 22.

[0090] In one embodiment, the first chemical vapor deposition chamber 2201 is used to prepare a first sandwich conductive layer 221 on the first transparent conductive layer 21. In one embodiment, a first sensor and a first elevating wrapping device are provided within the first chemical vapor deposition chamber 2201. The first sensor is used to sense the solar cell precursor 10, and the first wrapping device is used to wrap the lower surface of the solar cell precursor 10 to avoid affecting the lower surface of the solar cell precursor 10 during the preparation of the first sandwich conductive layer 221. In other words, to avoid affecting the second transparent conductive film intermediate. During the actual production process, the solar cell precursor 10 on which the first transparent conductive layer 21 is prepared is transported to the first chemical vapor deposition chamber 2201. At this time, the first sensor will sense the solar cell precursor 10. After the first sensor senses the solar cell precursor 10, the first wrapping device arranged at the bottom of the first chemical vapor deposition chamber 2201 will automatically rise and wrap the lower surface of the solar cell precursor 10, that is, wrap the second transparent conductive film intermediate, and then the first sandwich conductive layer 221 is prepared in the first chemical vapor deposition chamber 2201 by chemical vapor deposition. After the first sandwich conductive layer 221 is prepared, the first wrapping device will automatically descend to expose the lower surface of the solar cell precursor 10.

[0091] In one embodiment, the material of the first sandwich conductive layer 221 is selected from one of aluminum zinc oxide (AZO) and fluorine tin oxide (FTO). In one embodiment, the thickness of the first sandwich conductive layer 221 is 38 nm to 39 nm.

[0092] In one embodiment, the second chemical vapor deposition chamber 2202 is used to prepare a second sandwich conductive layer 222 on the first sandwich conductive layer 221 to obtain the first sandwich film 22. In one embodiment, a second sensor and a second liftable wrapping device are provided in the second chemical vapor deposition chamber 2202. The second sensor is used to sense the solar cell precursor 10, and the second wrapping device is used to wrap the lower surface of the solar cell precursor 10 to avoid affecting the lower surface of the solar cell precursor 10 when preparing the second sandwich conductive layer 222. In other words, it avoids affecting the second transparent conductive film intermediate. In the actual production process, the solar cell precursor 10 on which the first sandwich conductive layer 221 is prepared is transported to the second chemical vapor deposition chamber 2202. At this time, the second sensor will sense the solar cell precursor 10. After the second sensor senses the solar cell precursor 10, the second wrapping device arranged at the bottom of the second chemical vapor deposition chamber 2202 will automatically rise and wrap the lower surface of the solar cell precursor 10, that is, wrap the second transparent conductive film intermediate, and then the second sandwich conductive layer 222 is prepared in the second chemical vapor deposition chamber 2202 by chemical vapor deposition. After the second sandwich conductive layer 222 is prepared, the second wrapping device will automatically descend to expose the lower surface of the solar cell precursor 10.

[0093] In one embodiment, the material of the second sandwich conductive layer 222 is selected from one of aluminum zinc oxide (AZO) and fluorine tin oxide (FTO), and the materials of the first sandwich conductive layer 221 and the second sandwich conductive layer 222 are different. In one embodiment, the thickness of the second sandwich conductive layer 222 is 38 nm to 39 nm.

[0094] In one embodiment, a second residual gas analysis (RGA) device is provided in the chemical vapor deposition chamber 220. The second residual gas analysis device is used to monitor and analyze gases such as water vapor in the chemical vapor deposition chamber 220 to better monitor the preparation results of the first sandwich conductive layer 221 and the second sandwich conductive layer 222.

[0095] In one embodiment, the second PVD chamber 230 is located on a side of the CVD chamber 220 away from the first PVD chamber 210, and the second PVD chamber 230 is in communication with the CVD chamber 220. During actual production, the solar cell precursor 10, on which the second sandwich conductive layer 222 has been prepared, is transported to the second PVD chamber 230, where the second transparent conductive layer 23 is prepared using a method such as magnetron sputtering.

[0096] In one embodiment, the second PVD chamber 230 includes a third PVD chamber 2301, a second isolation chamber 2302, and a fourth PVD chamber 2303, which are interconnected. The second isolation chamber 2302 is disposed between the third PVD chamber 2301 and the fourth PVD chamber 2303. The third PVD chamber 2301 is used to form a second transparent conductive layer 23 on the second sandwich conductive layer 222 to obtain a first transparent conductive film 20, and the fourth PVD chamber 2303 is used to thicken the second transparent conductive film intermediate to obtain a second transparent conductive film 30.

[0097] In one embodiment, the material of the second transparent conductive layer 23 includes indium tin oxide. In one embodiment, the thickness of the second transparent conductive layer 23 is 5 nm to 10 nm.

[0098] In one embodiment, the material of the second transparent conductive film 30 includes indium tin oxide. In one embodiment, the second transparent conductive film 30 may be 100 nm to 120 nm thick. In a specific embodiment, the second transparent conductive film 30 may be 110 nm thick.

[0099] In one embodiment, a third residual gas analysis (RGA) device is provided in the second PVD chamber 230. The third RGA device is used to monitor and analyze gases such as water vapor in the second PVD chamber 230 to better monitor the fabrication results of the second transparent conductive layer 23 and the second transparent conductive film 30.

[0100] In one embodiment, the coating device 200 further includes a first connecting chamber 240. In one embodiment, the first connecting chamber 240 is disposed between the second physical vapor deposition chamber 2103 and the first chemical vapor deposition chamber 2201, and the first connecting chamber 240 is connected to the second physical vapor deposition chamber 2103 and the first chemical vapor deposition chamber 2201. The first connecting chamber 240 is used to prevent gas leakage from the second physical vapor deposition chamber 2103. In actual production, since the first transparent conductive layer 21 is prepared in the second physical vapor deposition chamber 2103 using a physical vapor deposition process, plasma gas is present in the second physical vapor deposition chamber 2103. Providing the first connecting chamber 240 between the second physical vapor deposition chamber 2103 and the first chemical vapor deposition chamber 2201 can prevent the plasma gas in the second physical vapor deposition chamber 2103 from leaking into the first chemical vapor deposition chamber 2201. After the solar cell precursor 10, on which the first transparent conductive layer 21 has been prepared, is delivered to the first connecting chamber 240, the solar cell precursor 10 will descend from the middle-upper portion of the first connecting chamber 240 to the middle-lower portion of the first connecting chamber 240, and then enter the first chemical vapor deposition chamber 220 through a vacuum flip valve. After the solar cell precursor 10 descends from the middle-upper portion of the first connecting chamber 240 to the middle-lower portion of the first connecting chamber 240, a vacant space will appear in the middle-upper portion of the first connecting chamber 240. At this time, another solar cell precursor 10, on which the first transparent conductive layer 21 has been prepared, will enter the middle-upper portion of the first connecting chamber 240, thereby achieving the transition from fluid physical vapor deposition coating to suspended chemical vapor deposition coating. That is, when the film is deposited in the first physical vapor deposition chamber 210 , the solar cell precursor 10 is in motion, while when the film is deposited in the chemical vapor deposition chamber 220 , the solar cell precursor 10 is stationary.

[0101] In one embodiment, the coating apparatus 200 further includes a second connecting chamber 241. In one embodiment, the second connecting chamber 241 is disposed between the second chemical vapor deposition chamber 2202 and the third physical vapor deposition chamber 2301, and the second connecting chamber 241 is connected to the second chemical vapor deposition chamber 2202 and the third physical vapor deposition chamber 2301. The second connecting chamber 241 is used to prevent gas leakage from the third physical vapor deposition chamber 2301. In actual production, since the second transparent conductive layer 23 is prepared in the third physical vapor deposition chamber 2301 using a physical vapor deposition process, plasma gas is present in the third physical vapor deposition chamber 2301. Providing the second connecting chamber 241 between the second chemical vapor deposition chamber 2202 and the third physical vapor deposition chamber 2301 can prevent the plasma gas in the third physical vapor deposition chamber 2301 from leaking into the second chemical vapor deposition chamber 2202. Likewise, the solar cell precursor 10 in the second chemical vapor deposition chamber 2202 also enters the third physical vapor deposition chamber 2301 through a vacuum flip valve.

[0102] In one embodiment, the coating device 200 further includes a first vacuum chamber 250. In one embodiment, the first vacuum chamber 250 is disposed between the second chemical vapor deposition sub-chamber 2202 and the second connecting chamber 241, and the first vacuum chamber 250 is connected to the second chemical vapor deposition sub-chamber 2202 and the second connecting chamber 241. The first vacuum chamber 250 is used to provide a vacuum environment for the solar cell precursor 10 after the second sandwich conductive layer 222 is prepared. In the actual production process, the solar cell precursor 10 after the second sandwich conductive layer 222 is prepared is first transported to the first vacuum chamber 250 so that the solar cell precursor 10 is in a vacuum environment, and then the solar cell precursor 10 in the first vacuum chamber 250 is transported to the second connecting chamber 241.

[0103] In one embodiment, the coating apparatus 200 further includes a heating chamber 260. In one embodiment, the heating chamber 260 is disposed between the first connecting chamber 240 and the first chemical vapor deposition chamber 2201, and the heating chamber 260 is connected to the first connecting chamber 240 and the first chemical vapor deposition chamber 2201. The first heating chamber 260 is used to heat the solar cell precursor 10 after the first transparent conductive layer 21 is formed, so as to facilitate the formation of the second transparent conductive film 30 within the first chemical vapor deposition chamber 220.

[0104] In one embodiment, the coating device 200 further includes a second vacuum chamber 270. In one embodiment, the second vacuum chamber 270 is disposed on a side of the first physical vapor deposition sub-chamber 2101 away from the first connecting chamber 240, and the second vacuum chamber 270 is connected to the first physical vapor deposition sub-chamber 2101. The second vacuum chamber 270 is used to provide a vacuum environment for the solar cell precursor 10. In the actual production process, the solar cell precursor 10 can be first placed in the second vacuum chamber 270 by a robotic arm so that the solar cell precursor 10 is in a vacuum environment, and then the solar cell precursor 10 in the second vacuum chamber 270 is transported to the first physical vapor deposition sub-chamber 2101 to prepare the second transparent conductive film intermediate.

[0105] In one embodiment, the coating device 200 further includes a third connecting chamber 271. In one embodiment, the third connecting chamber 271 is disposed between the second vacuum chamber 270 and the first physical vapor deposition sub-chamber 2101, and the third connecting chamber 271 is connected to the second vacuum chamber 270 and the first physical vapor deposition sub-chamber 2101. The third connecting chamber 271 is used to prevent gas leakage from the first physical vapor deposition sub-chamber 2101. In the actual production process, since the second transparent conductive film intermediate is prepared in the first physical vapor deposition sub-chamber 2101 using a physical vapor deposition process, there is plasma gas in the first physical vapor deposition sub-chamber 2101. The provision of the third connecting chamber 271 between the second vacuum chamber 270 and the first physical vapor deposition sub-chamber 2101 can prevent the plasma gas in the first physical vapor deposition sub-chamber 2101 from leaking into the second vacuum chamber 270.

[0106] In one embodiment, the coating device 200 further includes a first buffer chamber 272. In one embodiment, the first buffer chamber 272 is disposed between the second vacuum chamber 270 and the third connecting chamber 271, and the first buffer chamber 272 is connected to the second vacuum chamber 270 and the third connecting chamber 271. The first buffer chamber 272 is used to perform a first buffer treatment on the solar cell precursor 10. In this way, during the production process, when an abnormality occurs to the solar cell precursor 10 in the first physical vapor deposition chamber 210, the first buffer chamber 272 can be used to cache the solar cell precursor 10 that has not been unloaded in time, so as to avoid excessive solar cell precursors 10 being transported into the first physical vapor deposition chamber 210, and to avoid congestion or collision during transportation that may cause damage, so that the production line can operate reliably and stably.

[0107] In one embodiment, the first buffer chamber 272 may be a device having a storage space.

[0108] In one embodiment, the coating device 200 further includes a second cache chamber 280. In one embodiment, the second cache chamber 280 is disposed between the first connecting chamber 240 and the heating chamber 260, and the second cache chamber 280 is connected to the first connecting chamber 240 and the heating chamber 260. The second cache chamber 280 is used to perform a second cache treatment on the solar cell precursor 10 that has completed the first transparent conductive layer 21. In this way, during the production process, when an abnormality occurs to the solar cell precursor 10 in the first physical vapor deposition chamber 210, the second cache chamber 280 can be used to cache the abnormal solar cell precursor 10 to avoid the abnormal solar cell precursor 10 from being transported to the chemical vapor deposition chamber 220. At the same time, the second buffer chamber 280 can also be used to cache the solar cell precursors 10 that will not be unloaded in the future, so as to avoid excessive solar cell precursors 10 being transported into the chemical vapor deposition chamber 220 and to avoid congestion or collision during transportation that may cause damage, so that the production line can operate reliably and stably.

[0109] In one embodiment, the second buffer chamber 280 may be a device having a storage space.

[0110] In one embodiment, the coating device 200 further includes a second hollowing chamber 290. In one embodiment, the second hollowing chamber 290 is disposed on a side of the fourth physical vapor deposition chamber 2303 away from the second connecting chamber 241. The second hollowing chamber 290 is connected to the fourth physical vapor deposition chamber 2303. The second hollowing chamber 290 is used to provide a normal pressure environment for the solar cell precursor 10 after the first transparent conductive film 20 and the second transparent conductive film 30 are prepared.

[0111] In one embodiment, the solar cell precursor 10 on which the first transparent conductive film 20 and the second transparent conductive film 30 are prepared can be taken out from the second hollowing chamber 290 by a robotic arm.

[0112] In one embodiment, the coating device 200 further includes a fourth connecting chamber 291. In one embodiment, the fourth connecting chamber 291 is disposed between the fourth physical vapor deposition chamber 2303 and the second rupture chamber 290, and the fourth connecting chamber 291 is connected to the fourth physical vapor deposition chamber 2303 and the second rupture chamber 290. The fourth connecting chamber 291 is used to prevent gas leakage from the fourth physical vapor deposition chamber 2303. In actual production, since the second transparent conductive film intermediate is thickened in the fourth physical vapor deposition chamber 2303 using a physical vapor deposition process, plasma gas is present in the fourth physical vapor deposition chamber 2303. Disposing the fourth connecting chamber 291 between the fourth physical vapor deposition chamber 2303 and the second rupture chamber 290 can prevent the plasma gas in the fourth physical vapor deposition chamber 2303 from leaking into the second rupture chamber 290.

[0113] As shown in Figures 4 and 5, the solar cell precursor 10 is placed in the second vacuum chamber 270 from the atmosphere by a robotic arm, and then the solar cell precursor 10 set in the second vacuum chamber 270 is transported to the first physical vapor deposition chamber 2101 after passing through the first buffer chamber 272 and the third connecting chamber 271 in sequence. The first physical vapor deposition chamber 2101 prepares the second transparent conductive film intermediate on the P-type amorphous silicon film 15 of the solar cell precursor 10, and passes through the first isolation chamber 272. After the separation chamber 2102, the second physical vapor deposition chamber 2103 prepares the first transparent conductive layer 21 on the N-type amorphous silicon film 13 of the solar cell precursor 10, and then the solar cell precursor 10 after the completion of the first transparent conductive layer 21 is transported to the first chemical vapor deposition chamber 2201 through the first connecting chamber 240, the second buffer chamber 280 and the heating chamber 260 in sequence. The chemical vapor deposition chamber 2201 prepares the first sandwich conductive film on the first transparent conductive layer 21. The solar cell precursor 10 after completing the first sandwich conductive layer 221 is transported to the second chemical vapor deposition chamber 2202, and the second chemical chamber prepares the second sandwich conductive layer 222 on the first sandwich conductive layer 221. Then, the solar cell precursor 10 after completing the second sandwich conductive layer 222 is transported to the third physical vapor deposition chamber 2301 through the first vacuum chamber 250 and the second connecting chamber 241 in sequence. The third physical vapor deposition chamber 2301 is in The second transparent conductive layer 23 is prepared on the second sandwich conductive layer 222 to obtain the first transparent conductive film 20. After passing through the second isolation chamber 2302, the fourth physical vapor deposition chamber 2303 thickens the second transparent conductive film intermediate to obtain the second transparent conductive film 30, and finally obtains the finished product. The finished product is transported to the second hollow chamber 290 after passing through the fourth connecting chamber 291, and another robotic arm takes the finished product out of the second hollow chamber 290 and places it in the atmosphere.

[0114] At least one embodiment of the present invention provides a solar cell 100 production system, wherein the solar cell 100 production system includes the above-mentioned coating device 200 .

[0115] The coating apparatus 200 provided by the present invention includes a first physical vapor deposition chamber 210, a chemical vapor deposition chamber 220, and a second physical vapor deposition chamber 230. The present invention utilizes a single coating apparatus 200 to produce the first transparent conductive film 20 having a laminated structure, eliminating the need for three coating apparatuses 200. This improves the stability and reliability of the coating. It is understood that the coating apparatus 200 can also be used to produce the second transparent conductive film 30 having a multi-layer structure.

[0116] In addition, the coating device 200 provided by the present invention also has the following advantages:

[0117] First, the original physical vapor deposition chamber is changed into a hybrid vapor deposition chamber, which not only has the functions of the original physical vapor deposition chamber, but also achieves the purpose of using one coating device 200 to prepare the first transparent conductive film 20 with a multi-layer structure.

[0118] Second, it has no impact on the process and reduces the workload of employees.

[0119] Third, the original transparent conductive film is formed twice instead of once, thereby improving the uniformity and density of the first transparent conductive film 20 and the second transparent conductive film 30 .

[0120] Fourth, it reduces manual intervention and eliminates the need for frequent manual operation to debug the process formula, thus improving the stability of the production line.

[0121] Fifth, the processes in the first PVD chamber 210 , the CVD chamber 220 and the second PVD chamber 230 do not interfere with each other and are carried out simultaneously, which has a great positive impact on the breakthrough of production capacity.

[0122] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0123] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A solar cell comprising: Solar cell precursors; as well as A first transparent conductive film is disposed on the solar cell precursor; Among them, the first transparent conductive film includes a first transparent conductive layer, a first sandwich film and a second transparent conductive layer which are sequentially stacked on the solar cell precursor, the material of the first transparent conductive layer includes indium tin oxide, the material of the first sandwich film is different from that of the first transparent conductive layer, and the material of the second transparent conductive layer includes indium tin oxide.

2. The solar cell according to claim 1, wherein: The first sandwich film has a structure of two or more layers.

3. The solar cell according to claim 1, wherein: The first sandwich film includes a first sandwich layer arranged on the first transparent conductive layer and a second sandwich layer arranged on the first sandwich layer, the material of the first sandwich layer and the second sandwich layer is selected from one of zinc aluminum oxide and tin fluoride oxide, and the materials of the first sandwich layer and the second sandwich layer are different.

4. The solar cell according to any one of claims 1 to 3, wherein Also includes: A second transparent conductive film, wherein the second transparent conductive film and the first transparent conductive film are respectively disposed on two opposite surfaces of the solar cell precursor; Among them, the second transparent conductive film includes a third transparent conductive layer, a second sandwich film and a fourth transparent conductive layer which are sequentially stacked on the solar cell precursor, the material of the third transparent conductive layer includes indium tin oxide, the material of the second sandwich film is different from that of the third transparent conductive layer, and the material of the fourth transparent conductive layer includes indium tin oxide.

5. A method for preparing a solar cell according to any one of claims 1 to 4, wherein: The following steps are involved: Preparing the first transparent conductive layer on the solar cell precursor; preparing the first sandwich film on the first transparent conductive layer; as well as The second transparent conductive layer is prepared on the first sandwich film, thereby obtaining the first transparent conductive film.

6. The method for preparing a solar cell according to claim 5, wherein: The first transparent conductive layer and the second transparent conductive layer are prepared by a physical vapor deposition process, and the first sandwich film is prepared by a chemical vapor deposition process.

7. A coating device, comprising: A first physical vapor deposition chamber, wherein the first physical vapor deposition chamber is used to prepare a first transparent conductive layer as claimed in any one of claims 1 to 4; A chemical vapor deposition chamber, the chemical vapor deposition chamber is connected to the first physical vapor deposition chamber, and the chemical vapor deposition chamber is used to prepare the first sandwich film according to any one of claims 1 to 4; as well as A second physical vapor deposition chamber, the second physical vapor deposition chamber is connected to the chemical vapor deposition chamber, and the second physical vapor deposition chamber is used to prepare the second transparent conductive layer as described in any one of claims 1 to 4.

8. The coating device according to claim 7, wherein: The chemical vapor deposition chamber includes a first chemical vapor deposition sub-chamber and a second chemical vapor deposition sub-chamber which are interconnected. The first chemical vapor deposition sub-chamber is connected to the first physical vapor deposition chamber, and the second chemical vapor deposition sub-chamber is connected to the second physical vapor deposition chamber.

9. The coating device according to claim 7 or 8, wherein: The first physical vapor deposition chamber includes a first physical vapor deposition sub-chamber, a first isolation sub-chamber and a second physical vapor deposition sub-chamber which are interconnected, and the first isolation sub-chamber is arranged between the first physical vapor deposition sub-chamber and the second physical vapor deposition sub-chamber.

10. The coating device according to any one of claims 7 to 9, wherein: The second PVD chamber includes a third PVD sub-chamber, a second isolation sub-chamber and a fourth PVD sub-chamber which are interconnected, and the second isolation sub-chamber is arranged between the third PVD sub-chamber and the fourth PVD sub-chamber.

11. The coating device according to any one of claims 7 to 10, wherein: The coating device also includes a first connecting chamber, which is arranged between the first physical vapor deposition chamber and the chemical vapor deposition chamber, and the first connecting chamber is connected to the first physical vapor deposition chamber and the chemical vapor deposition chamber.

12. The coating device according to any one of claims 7 to 11, wherein: The coating device further includes a first cache chamber, which is disposed on a side of the first physical vapor deposition chamber away from the chemical vapor deposition chamber, and the first cache chamber is connected to the first physical vapor deposition chamber.

13. The coating device according to any one of claims 7 to 12, wherein: The coating device further includes a first vacuum chamber, which is disposed between the chemical vapor deposition chamber and the second physical vapor deposition chamber, and the first vacuum chamber is connected to the chemical vapor deposition chamber and the second physical vapor deposition chamber.

14. A solar cell production system, comprising the coating device according to any one of claims 7 to 13.

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