High-pressure substrate processing apparatus and method

Abstract

Disclosed are a high-pressure substrate processing apparatus and method. The high-pressure substrate processing apparatus comprises an inner chamber, an outer chamber, a heating module, and a circulation module. The inner chamber is formed so as to receive therein a substrate to be processed and a reactant gas supplied at a first pressure higher than atmospheric pressure. The outer chamber is provided with a receiving space for receiving the inner chamber therein. The receiving space is formed so as to receive therein a shielding gas supplied at a second pressure set in association with the first pressure. The heating module is formed so as to heat the reactant gas in order to process the substrate to be processed. The circulation module is provided with a duct communicating with the receiving space, and is formed so as to circulate a cooling gas along a closed loop-type circulation path. The closed loop-type circulation path passes through the heating module and the receiving space and continues on to the duct.

Description

High pressure substrate processing device and method

[0001] The present invention relates to a processing device and method used to process a substrate at high pressure.

[0002]

[0003] Typically, during the semiconductor device manufacturing process, various processes are performed on the semiconductor substrate. Examples of these processes include oxidation, nitriding, ion implantation, and deposition. Hydrogen or deuterium heat treatment is also used to improve the interface properties of semiconductor devices.

[0004] The gas used for substrate processing is supplied to the chamber at high pressure and acts on the semiconductor substrate. After processing is complete, the used gas is exhausted from the chamber. After the gas is exhausted, the processed wafer is removed from the chamber. Then, a new wafer and gas are supplied to the chamber for the next processing.

[0005] The chamber must have a certain level of sealing to prevent gas leakage during substrate processing. The chamber's sealing (and insulation) is also important in preventing heat from leaking from within the chamber to the outside. However, sealing can also hinder lowering the chamber's temperature.

[0006] Specifically, to remove the processed wafers after processing, the chamber temperature must be lowered. However, the chamber's sealing properties require significant time for natural cooling. This results in a longer tact time for the wafer processing process.

[0007] The background technology described above is technical information that the inventor possessed for the purpose of deriving embodiments of the present invention or acquired during the derivation process, and cannot necessarily be said to be publicly known technology disclosed to the general public prior to the present application.

[0008]

[0009] An object of the present invention is to provide a high-pressure substrate processing apparatus and method that can cool a chamber more quickly than natural cooling through gas circulation between the inside and outside of a high-temperature chamber.

[0010]

[0011] According to one aspect of the present invention for realizing the above-described task, a high-pressure substrate processing device may include: an inner chamber formed to receive a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an outer chamber formed to receive a receiving space for receiving the inner chamber and a protective gas supplied to the receiving space at a second pressure set in relation to the first pressure; a heating module formed to heat the reaction gas for processing the substrate to be processed; and a circulation module formed to circulate a cooling gas along a closed-loop circulation path passing through the heating module and the receiving space and leading to the duct.

[0012] Here, the cooling gas is mixed with the protective gas to form a mixed gas, and can flow along the closed loop circulation path as a part of the mixed gas.

[0013] Here, the duct may include one end connected to the lower portion of the external chamber.

[0014] Here, the duct may further include another end connected to the upper portion of the external chamber.

[0015] Here, the circulation module may further include a communication valve configured to selectively communicate the duct with the receiving space.

[0016] Here, the circulation module may further include a blower that circulates the cooling gas through the receiving space and the heating module to the duct.

[0017] Here, an air supply module may further be included, configured to supply the cooling gas to the duct at a third pressure set in relation to the second pressure.

[0018] Here, the cooling gas may be an inert gas.

[0019] Here, the third pressure may be the same as the second pressure, or may be a pressure set within a range in which the related components are not impacted by a pressure difference with the second pressure when communicating between the external chamber and the circulation module.

[0020] Here, the outer chamber further includes a partition plate that divides the receiving space into a high temperature zone that accommodates the heating module and the inner chamber and a low temperature zone having a temperature lower than the high temperature zone, and the closed loop circulation path may include a section passing through the low temperature zone from the high temperature zone.

[0021] Here, the heating module may further include a heater disposed in the receiving space so as to face the inner chamber; and a blocking module having a through hole and an insulating block disposed to surround the heater, the blocking module being configured to close the through hole when the heating module is in operation and to open the through hole when the circulation module is in operation.

[0022] Here, the blocking module may include a shutter having an open hole corresponding to the through hole; and a driving unit that moves the shutter between a first position in which the open hole is positioned so as to be misaligned with respect to the through hole and a second position in which the open hole is positioned so as to correspond to the through hole.

[0023] According to another aspect of the present invention, a high-pressure substrate processing method may include: supplying a reaction gas at a first pressure higher than atmospheric pressure to an inner chamber containing a substrate to be processed; supplying a protective gas at a second pressure set in relation to the first pressure to an outer chamber containing the inner chamber; heating the reaction gas to a reaction temperature using a heating module so that the substrate to be processed is processed at the first pressure and the reaction temperature; providing a cooling gas to a duct at a third pressure set in relation to the second pressure; and connecting the duct with the outer chamber and circulating the cooling gas along a closed-loop circulation path passing through the duct, the heating module, and the outer chamber to cool the substrate.

[0024] Here, the step of providing cooling gas to the duct at a third pressure set in relation to the second pressure may include a step of setting the third pressure to be equal to the second pressure.

[0025] Here, the step of heating the reaction gas to a reaction temperature using the heating module so that the substrate to be processed is processed at the first pressure and the reaction temperature may include the step of closing a through hole formed in the heating module that heats the reaction gas to block the discharge of heat generated in the heating module through the through hole, and the step of connecting the duct with the external chamber and circulating the cooling gas along a closed-loop circulation path connecting the duct and the external chamber to cool the substrate may include the step of opening the through hole to allow the cooling gas to flow toward the internal chamber through the through hole.

[0026]

[0027] According to the high-pressure substrate processing device and method according to the present invention configured as described above, the circulation module connected to the external chamber while the reaction gas injected at high pressure into the internal chamber is heated by the heating module is formed to circulate cooling gas along a closed-loop circulation path passing through the receiving space of the external chamber and the heating module, so that the cooling gas can cool the high-temperature internal chamber and, further, the substrate more quickly than natural cooling.

[0028] In addition, since an inert gas is used as the cooling gas, which is the same as the protective gas injected into the receiving space, even if the reaction gas leaks from the inner chamber into the receiving space, the risk of the reaction gas exploding is structurally prevented.

[0029]

[0030] FIG. 1 is a conceptual diagram of a high-pressure substrate processing device according to one embodiment of the present invention.

[0031] Fig. 2 is a block diagram for explaining the control configuration of the high-pressure substrate processing device of Fig. 1.

[0032] Fig. 3 is a conceptual diagram illustrating the high-pressure substrate processing device of Fig. 1 in more detail.

[0033] Figure 4 is a conceptual diagram showing the relationship between the shutter and the insulation block at the first position.

[0034] Figure 5 is a conceptual diagram showing the relationship between the shutter and the insulation block at the second position.

[0035] Figure 6 is a flowchart of a high-pressure substrate processing method according to another embodiment of the present invention.

[0036] Figure 7 is a flowchart showing one step of Figure 6 in more detail.

[0037] Figure 8 is a flowchart showing a method of controlling a through hole in relation to other steps of Figure 6.

[0038]

[0039] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0040] The present invention is not limited to the embodiments disclosed below, but can be implemented in various forms and with various modifications. However, these embodiments are provided to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. Therefore, the present invention is not limited to the embodiments disclosed below, but should be understood to include all modifications, equivalents, and substitutes included within the technical spirit and scope of the present invention, as well as substitutions or additions of the components of one embodiment with those of another embodiment.

[0041] The attached drawings are merely intended to facilitate understanding of the embodiments disclosed in this specification, and should not be construed as limiting the technical ideas disclosed in this specification, but should be understood to encompass all modifications, equivalents, and substitutes included within the spirit and technical scope of the present invention. In the drawings, the components may be expressed in exaggerated sizes or thicknesses for ease of understanding, but the scope of protection of the present invention should not be construed as being limited thereby.

[0042] The terminology used in this specification is only used to describe specific implementations or examples and is not intended to limit the present invention. In addition, the singular expression includes the plural expression unless the context clearly indicates otherwise. In the specification, terms such as "comprises" and "consists of" are intended to indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification. In other words, it should be understood that terms such as "comprises" and "consists of" do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0043] Terms that include ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by these terms. These terms are used solely to distinguish one component from another.

[0044] When a component is referred to as being "connected / connected" or "connected" to another component, it should be understood that it may be directly connected / connected to that other component, or that there may be other components in between. Conversely, when a component is referred to as being "directly connected / connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0045] When a component is referred to as being "above" or "below" another component, it should be understood that it is not only positioned directly above that other component, but that there may also be other components present in between.

[0046] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0047] FIG. 1 is a conceptual diagram of a high-pressure substrate processing device according to one embodiment of the present invention.

[0048] Referring to this drawing, the high-pressure substrate processing device (100) may include an inner chamber (110), an outer chamber (120), an air supply module (130), an exhaust module (140), and a circulation module (160).

[0049] The inner chamber (110) forms a processing space where a substrate to be processed is processed. The inner chamber (110) may be made of a non-metallic material, for example, quartz, to reduce the possibility of generating contaminants (particles) in a high-temperature and high-pressure process environment. Although simplified in the drawing, an inner door (not shown) that opens the processing space is provided at the bottom of the body (inner housing) of the inner chamber (110). As the inner door is lowered, the processing space is opened, and the substrate can be placed into the inner chamber (110) while being mounted on a holder (not shown). Depending on the operation of the heater (151, see FIG. 3) disposed on the outside of the inner chamber (110), the temperature of the inner chamber (110) may reach several hundred degrees Celsius. The substrate may be, for example, a semiconductor wafer or display glass. In that case, the holder may be a wafer boat capable of stacking the semiconductor wafers in multiple layers.

[0050] The outer chamber (120) is configured to accommodate the inner chamber (110). Unlike the inner chamber (110), the outer chamber (120) is free from contamination issues regarding semiconductor wafers and can be manufactured from a metal material. The outer chamber (120) has an outer housing (121) having a receiving space for accommodating the inner chamber (110). The outer housing (121) also has an outer door (not shown) at the bottom, and the outer door can be lowered together with the inner door to open the receiving space. The inner chamber (110) can be mounted on the outer chamber (120).

[0051] The above-mentioned receiving space can be divided into two zones by a partition plate (123). The lower side of the partition plate (123) can be a high temperature zone (125) where the internal chamber (110) and the heater (151) are located. The upper side of the partition plate (123) can be a low temperature zone (127) having a lower temperature than the high temperature zone (125). The high temperature zone (125) has a temperature comparable to the internal chamber (110) depending on the operation of the heater (151), but the low temperature zone (127) can have a temperature significantly lower than the high temperature zone (125). Although the partition plate (123) divides the high temperature zone (125) and the low temperature zone (127), it is formed to allow a gas flow of less than a certain flow rate between them.

[0052] The air supply module (130) is configured to supply gas to the chambers (110, 120). The air supply module (130) has a gas supply unit (131) connected to a utility (gas supply facility) of a semiconductor factory. The gas supply unit (131) can selectively supply, as a reaction gas, for example, hydrogen gas (H2), deuterium gas (D2), fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc., to the inner chamber (110). The gas supply unit (131) can supply, as a protective gas, for example, nitrogen gas or argon gas (Ar), which is an inert gas, to the outer chamber (120). The gas supply unit (131) can also supply, as a cooling gas, for example, the inert gas described above, to the circulation module (160). These reaction gases, protective gases, and cooling gases are respectively introduced into the inner chamber (110), the outer chamber (120), and the circulation module (160) through the reaction gas line (133), the protective gas line (135), and the cooling gas line (137). The protective gas introduced into the outer chamber (120) specifically fills the space between the outer chamber (120) and the inner chamber (110). The reaction gases, protective gases, and cooling gases may be collectively referred to as process gases since they are used in the processing.

[0053] The process gas may be supplied to form a high pressure higher than atmospheric pressure, for example, ranging from several atmospheres to several tens of atmospheres. In addition, when the pressure of the reaction gas is a first pressure, the pressure of the protective gas is a second pressure, and the pressure of the cooling gas is a third pressure, they may be maintained in a set relationship. For example, the second pressure may be set to be slightly greater than the first pressure. Such a pressure difference provides an advantage in that the reaction gas does not leak from the inner chamber (110). In addition, the third pressure may be the same as the second pressure, or a value within a set range for the second pressure. The set range may be, for example, within 5 Psi or 10 Psi. Such a set range provides an advantage in that the related components are not shocked by the pressure difference between the second pressure and the third pressure when the outer chamber (120) and the circulation module (160) are connected. The third pressure may also be determined at a level that does not significantly change the relationship between the second pressure and the first pressure. When the external chamber (120) and the circulation module (160) are connected, the cooling gas is mixed with the protective gas to form a new protective gas and a new second pressure. It is preferable that the new second pressure does not significantly deviate from the previously established relationship with the first pressure.

[0054] The exhaust module (140) is configured to exhaust the process gas from the chamber (110, 120). To exhaust the reaction gas from the inner chamber (110), an exhaust pipe (141) is connected to the upper portion of the inner chamber (110). The exhaust pipe (141) is placed in the low-temperature zone (127) and can extend from the low-temperature zone (127) to the outside of the outer chamber (120). A gas discharger (143) can be installed in the exhaust pipe (141). The gas discharger (143) can be a valve that controls the exhaust of the reaction gas.

[0055] In order to discharge the protective gas and the cooling gas from the external chamber (120), an exhaust pipe (145) connected to the external chamber (120) and a gas discharger (147) installed therein may be provided. Since these exhaust pipes (141 and 145) are connected to each other, the reaction gas is diluted in the protective gas (and the cooling gas) and its concentration is lowered before being discharged.

[0056] The circulation module (160) is configured to circulate the cooling gas along a closed-loop circulation path passing through the receiving space. The closed-loop circulation path is formed by the receiving space and a duct (161) communicating therewith. One end (161a) of the duct (161) may be connected to the lower portion of the external chamber (120), specifically, to a side portion of the lower portion. In contrast, the other end (161b) of the duct (161) may be connected to the upper portion of the external chamber (120), specifically, to the upper surface.

[0057] The above-described closed-loop circulation path may generally form a rectangular closed loop. The closed-loop circulation path may be formed so that some sections thereof do not overlap with other sections. Within the receiving space, the closed-loop circulation path may include a section extending from a high-temperature zone (125) to a low-temperature zone (127).

[0058] The closed-loop circulation path is represented by arrows in this drawing. In this embodiment, the cooling gas may flow in the direction of the arrows or counterclockwise. The cooling gas may be mixed with the protective gas during circulation to form a mixed gas, and may flow along the closed-loop circulation path as part of the mixed gas.

[0059] According to this configuration, after heating the reaction gas to process the substrate, the circulation module (160) can be operated to cool the substrate. The circulation module (160) can cool the substrate by circulating the cooling gas or the mixed gas along the closed-loop circulation path. Specifically, the cooling gas takes away heat from the internal chamber (110) or the reaction gas, thereby causing the substrate to also take away heat. The operation of the circulation module (160) allows the substrate to be cooled more quickly than natural cooling.

[0060] In addition, since an inert gas is supplied as the cooling gas, even if the reaction gas leaks from the inner chamber (110) into the receiving space, the occurrence of a problem due to the reaction gas reacting with the cooling gas is structurally prevented.

[0061] The control configuration of the high-pressure substrate processing device (100) is described with reference to Fig. 2. Fig. 2 is a block diagram for explaining the control configuration of the high-pressure substrate processing device (100) of Fig. 1.

[0062] Referring to this drawing (and FIG. 1), the high-pressure substrate processing device (100) may further include, in addition to the supply module (130) described above, a heating module (150), a detection module (170), a control module (180), and a storage module (185).

[0063] The heating module (150) is configured to include the heater (151) mentioned above. The heater (151) heats the reaction gas to reach the reaction temperature.

[0064] The detection module (170) is configured to detect the environment of the chamber (110, 120) and the circulation module (160). The detection module (170) may be equipped with a pressure gauge (171) and a temperature gauge (175). The pressure gauge (171) and the temperature gauge (175) may be installed in each of the chamber (110, 120) and the duct (161) of the circulation module (160). The pressure gauge (171) may include a pressure gauge for measuring the pressure of each of the duct (161) and the receiving space, as well as a differential pressure gauge for measuring the pressure difference between the duct (161) and the receiving space.

[0065] The control module (180) is a configuration that controls the supply module (130) and the exhaust module (140), etc. The control module (180) can control the supply module (130), etc., based on the detection result of the detection module (170).

[0066] The storage module (185) is a configuration that stores data, programs, etc. that the control module (180) can reference for control. The storage module (185) may include at least one type of storage medium among flash memory, hard disk, magnetic disk, and optical disk.

[0067] According to this configuration, the control module (180) can control the operation of the supply module (130) based on the pressure (the first to third pressures) of the chamber (110, 120) and the duct (161) obtained through the pressure gauge (171).

[0068] The control module (180) can also control the operation of the circulation module (160) based on the temperature of the chamber (110, 120) obtained through the temperature gauge (175). The operation of the circulation module (160) can be performed when the above processing is completed.

[0069] When the above processing is completed, the circulation module (160) may operate before the exhaust module (140) operates and the reaction gas is exhausted. Depending on the operation of the circulation module (160), the cooling gas or the mixed gas cools the reaction gas through heat exchange. If the third pressure is the same as the second pressure, the above cooling process can be performed without fluctuations in the first pressure and the second pressure. The reaction gas can be exhausted by the exhaust module (140) while being cooled to below a set temperature. This enables preemptive removal of risk factors such as explosion that may occur as the reaction gas is exhausted at a high temperature. Unlike the above, the circulation module (160) may also operate simultaneously with the operation of the exhaust module (140).

[0070] The specific configuration of the circulation module (160) is described with reference to FIGS. 3 to 5.

[0071] Fig. 3 is a conceptual diagram illustrating the high-pressure substrate processing device (100) of Fig. 1 in more detail. In this drawing, some components, such as the exhaust module (140), are not illustrated for the sake of simplicity.

[0072] Referring to this drawing, the (external) housing (121) of the external chamber (120) may include a body portion (121a) and a cover portion (121b). If the body portion (121a) has a generally cylindrical shape, the cover portion (121b) may have a shape corresponding to the open upper portion of the body portion (121a). The cover portion (121b) may have a generally dome shape.

[0073] The partition plate (123) can be positioned facing the cover portion (121b) and spaced apart from it. The partition plate (123) is positioned on the lower side of the cover portion (121b) while being supported by the body portion (121a). The partition plate (123) can define a high-temperature zone (125) together with the body portion (121a), and can define a low-temperature zone (127) together with the cover portion (121b).

[0074] The cover portion (121b) and / or the partition plate (123) may be formed to accommodate a cooling medium, for example, cooling water, within the cover portion (121b) and / or the partition plate (123). The cooling water accommodated in the cover portion (121b) and / or the partition plate (123) charges the low-temperature zone (127) with cold air. As a result, the temperature of the low-temperature zone (127) is maintained low. The cooling gas, the protective gas, or the mixed gas moved to the low-temperature zone (127) may be cooled through heat exchange with the cold air. As a result, the mixed gas, etc., after gaining heat in the high-temperature zone (125), loses heat in the low-temperature zone (127).

[0075] The cooling gas line (137) of the air supply module (130) is connected to the duct (161). The cooling gas line (137) may be connected between the first communication valve (162a) and the blower (163). A shut-off valve (138) may be installed in the cooling gas line (137) to shut off the line.

[0076] The heating module (150) may further have an insulating block (155) in addition to the heater (151) described above. The heater (151) may have a shape that faces and surrounds the inner chamber (110). The insulating block (155) may be formed to surround the heater (151). For this purpose, the insulating block (155) may have an overall inverted cup shape. By the insulating block (155), the heat generated from the heater (151) may be mainly transferred toward the inner chamber (110) and may hardly be transferred toward the outer chamber (120). A through hole (157) may be formed in the insulating block (155). The through hole (157) may extend along a direction connecting the inner chamber (110) and the outer chamber (120). The through hole (157) may be formed at the lower and upper portions of the insulating block (155). The through holes (157) may also be formed at regular intervals along the circumference of the insulating block (155). Since the cooling gas flows from the duct (161) toward the inner chamber (110) through the through holes (157), the through holes (157) may become a part of the closed-loop circulation path.

[0077] The circulation module (160) may further include, in addition to the duct (161) described above, a flue valve (162a, 162b), a blower (163), a cooler (165), and a filter (167).

[0078] The communication valves (162a, 162b) are configured to selectively connect the duct (161) with the receiving space. The communication valves (162a, 162b) can be divided into a first communication valve (162a) installed at one end (161a) and a second communication valve (162b) installed at the other end (161b). The communication valves (162a, 162b) can be opened when the circulation module (160) is operating and closed when the circulation module (160) is not operating.

[0079] The blower (163) is configured to cause the cooling gas to flow along the closed-loop circulation path. The blower (163) may be installed in a duct (161), specifically, so as to be connected to the closed-loop circulation path. By the operation of the blower (163), the cooling gas may start from the duct (161), pass through the receiving space and the heating module (150), and reach the duct (161).

[0080] The cooler (165) is configured to cool the mixed gas, etc. circulating along the closed-loop circulation path. The cooler (165) may be installed in a duct (161) so as to be connected to the closed-loop circulation path. The mixed gas, etc. may be further cooled by the cooler (165) after being cooled in the low-temperature zone (127). As the mixed gas, etc. is cooled while circulating along the closed-loop circulation path, the heat of the internal chamber (110) can be more efficiently removed during the next circulation.

[0081] The filter (167) is configured to remove foreign substances such as the above-mentioned mixed gas. The filter (167) may be located closer to the second combustion valve (162b) than to the cooler (165) or the blower (163).

[0082] The circulation module (160) can be constructed by combining the above configurations in various ways, and some configurations may not be adopted as needed. For example, if sufficient cooling of the mixed gas is achieved in the low-temperature zone (127), the cooler (165) may not be adopted.

[0083] Depending on whether the circulation module (160) is operating, the through hole (157) can be opened or closed. To open / close the through hole (157), a blocking module (190) can be provided.

[0084] The blocking module (190) is configured to close the through hole (157) when the circulation module (160) is not operating (when the heating module (150) is operating). Conversely, the blocking module (190) is configured to open the through hole (157) when the circulation module (160) is operating (when cooling the chamber). Specifically, the blocking module (190) may include a shutter (191) and a driving unit (195).

[0085] A shutter (191) is positioned between the outer chamber (120) and the insulating block (155). The shutter (191) may have a cylindrical body (192) surrounding the insulating block (155). An open hole (193, see FIG. 4) may be perforated in the body (192). The open hole (193) may be formed to correspond to the through hole (157).

[0086] The driving unit (195) is configured to drive the shutter (191) and move the shutter (191) between the first position and the second position. To this end, the driving unit (195) may include a hydraulic / pneumatic cylinder or a linear motor that enables linear driving.

[0087] The specific configuration of the blocking module (190) is further explained with reference to FIGS. 4 and 5. FIG. 4 is a conceptual diagram showing the relationship between the shutter (191) and the insulation block (155) at the first position, and FIG. 5 is a conceptual diagram showing the relationship between the shutter (191) and the insulation block (155) at the second position.

[0088] Referring to Fig. 4, the opening hole (193) in the first position is arranged to be offset from the through hole (157). This arrangement places the through hole (157) in a closed state. This state is suitable when the heating module (150) is operating and the circulation module (160) is not operating. The heat generated in the heating module (150) remains within the space surrounded by the insulating block (155) and does not escape to the outside of the space along the through hole (157).

[0089] Referring to Fig. 5, the open hole (193) in the second position is arranged to correspond to the through hole (157). This arrangement places the through hole (157) in an open state. This state is suitable when the heating module (150) is not operating and the circulation module (160) is operating. By the operation of the circulation module (160), the cooling gas can flow into the space surrounded by the insulation block (155) through the open hole (193) and the through hole (157). Thereby, the cooling gas can exchange heat with the internal chamber (110) and take away heat from the internal chamber (110).

[0090] To switch between the first position and the second position, the drive unit (195) may push the shutter (191) upwards or pull it downwards along the height direction. Alternatively, the drive unit (195) may also rotate the shutter (191) along the circumferential direction of the shutter (191) to produce the switching.

[0091] Next, the operation of the high-pressure substrate processing device (100) will be described with reference to FIGS. 6 to 8.

[0092] Figure 6 is a flowchart of a high-pressure substrate processing method according to another embodiment of the present invention.

[0093] Referring to this drawing (and FIGS. 1 to 5), for processing the substrate, the control module (180) controls the air supply module (130) to inject the reaction gas into the internal chamber (110), specifically, the processing room (S1). The reaction gas is injected to reach the reaction pressure (the first pressure).

[0094] The supply module (130) injects the protective gas into the external chamber (120), specifically, the receiving space (S3). The protective gas is injected to reach a pressure (the second pressure) according to the set relationship with the reaction gas.

[0095] The control module (180) operates the heating module (150) to heat the reaction gas (S5). When the reaction gas reaches the reaction temperature, the substrate is processed at the reaction temperature and the reaction pressure.

[0096] After the above processing is completed, the circulation module (160) may be operated to rapidly cool the internal chamber (110), more specifically, the substrate. To this end, the control module (180) controls the air supply module (130) to inject the cooling gas into the duct (161) (S7).

[0097] The control module (180) connects the duct (161) with the receiving space so that the cooling gas circulates along the closed-loop circulation path (S9). In this case, the cooling gas can flow along the closed-loop circulation path while being mixed with the protective gas. Depending on the operation of the exhaust module (140), a portion of the mixed gas can be exhausted, and the remainder can circulate along the closed-loop circulation path. In this case, the mixed gas can have a lower pressure than before the operation of the exhaust module (140).

[0098] Figure 7 is a flowchart showing step (S7) of Figure 6 in more detail.

[0099] Referring further to this drawing, the control module (180) obtains the pressure of the protective gas, i.e., the second pressure, for injection of the cooling gas (S11). The second pressure can be detected through a pressure gauge (171).

[0100] The control module (180) causes the supply module (130) to start injecting the cooling gas with the goal of reaching the third pressure (S13).

[0101] The control module (180) determines whether the third pressure is within a set range relative to the second pressure (S15). Here, the third pressure may be the same value as the second pressure. Alternatively, they may have a certain level of pressure difference. The pressure difference between the receiving space and the duct (161) may be detected by the differential pressure gauge.

[0102] If the third pressure is within the set range, the control module (180) controls the air supply module (130) to complete the injection of the cooling gas (S17). Otherwise, the air supply module (130) will additionally inject the cooling gas into the duct (161) (S19).

[0103] Fig. 8 is a flowchart showing a method of controlling a through hole (157) in relation to other steps (S5 and S9) of Fig. 6.

[0104] Referring further to this drawing, the control module (180) determines whether the processing process for the substrate has reached the heating stage (S21).

[0105] In the above heating step, the control module (180) operates the heating module (150) and also operates the blocking module (190) (S23). The control module (180) operates the blocking module (190) to close the through hole (157) (S23). The heat for heating the reaction gas is not discharged to the outside through the through hole (157).

[0106] The control module (180) determines whether the processing of the substrate has been completed and has reached a stage where cooling is required (S25).

[0107] In the above cooling step, the control module (180) controls the circulation module (160) to connect the duct (161) with the receiving space and operates the blocking module (190). The control module (180) operates the blocking module (190) to open the through hole (157). As a result, the cooling gas can flow along the closed loop circulation path passing through the heating module (150) through the through hole (157).

[0108] Although the present specification has described a high-pressure substrate processing device (100) having a dual chamber (an inner chamber (110) and an outer chamber (120)) as an example, the present invention is not limited thereto. The configuration of the circulation module (160) and the like can also be applied to a semi-dual chamber, which is an intermediate form between a single chamber and the dual chamber. The semi-dual chamber can have two housings (an inner housing and an outer housing) and a door. The two housings can correspond to the inner housing and the outer housing (121) of the previous embodiment. The two housings can be combined by their own shapes or by interposing a separate member to form a closed space (corresponding to the receiving space). Similar to the previous embodiment, the substrate can be placed in the processing space of the inner housing and the reaction gas can be injected, and the protective gas can be injected into the closed space. Unlike the previous embodiments, the door is not protected by the protective gas. The door can correspond to the outer door of the previous embodiment. The above door can open and close the inner housing (and the outer housing). In this specification, the high-pressure substrate processing device (100) is described as a batch type processing device, but the present invention is not limited thereto. The present invention can also be applied to a single wafer type processing device.

[0109]

[0110] The present invention has industrial applicability in the field of manufacturing high-pressure substrate processing devices.

Claims

1. An internal chamber formed to accommodate a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; An outer chamber having a receiving space for receiving the inner chamber, and formed to receive a protective gas supplied to the receiving space at a second pressure set in relation to the first pressure; A heating module configured to heat the reaction gas for processing the above-mentioned substrate; and A high-pressure substrate processing device comprising a duct communicating with the above-described receiving space, and a circulation module formed to circulate cooling gas along a closed-loop circulation path passing through the heating module and the receiving space and leading to the duct.

2. In paragraph 1, The above cooling gas is, A high-pressure substrate processing device that forms a mixed gas by mixing with the above protective gas and flows along the closed-loop circulation path as a part of the mixed gas.

3. In paragraph 1, The above duct, A high-pressure substrate processing device comprising one end connected to the lower portion of the external chamber.

4. In paragraph 3, The above duct, A high pressure substrate processing device comprising an end connected to the upper portion of the external chamber.

5. In paragraph 1, The above circulation module is, A high pressure substrate processing device further comprising a communication valve configured to selectively connect the duct with the receiving space.

6. In paragraph 1, The above circulation module is, A high-pressure substrate processing device further comprising a blower that circulates the cooling gas through the receiving space and the heating module to the duct.

7. In paragraph 1, A high-pressure substrate processing device further comprising an air supply module configured to supply the cooling gas to the duct at a third pressure set in relation to the second pressure.

8. In paragraph 1, The above cooling gas is, High pressure substrate processing device with inert gas.

9. In paragraph 7, The above third pressure is, A high-pressure substrate processing device, wherein the pressure is the same as the second pressure or is set within a range where the related components are not impacted by the pressure difference from the second pressure when communicating between the external chamber and the circulation module.

10. In paragraph 1, The above outer chamber, The above-mentioned accommodation space further includes a partition plate that divides the accommodation space into a high-temperature zone that accommodates the heating module and the internal chamber and a low-temperature zone having a temperature lower than the high-temperature zone, The above closed loop circulation path is, A high-pressure substrate processing device comprising a section passing through the high-temperature zone and the low-temperature zone.

11. In paragraph 1, The above heating module, a heater disposed in the receiving space so as to face the inner chamber; and Including an insulating block having a through hole and arranged to surround the heater, A high-pressure substrate processing device further comprising a blocking module configured to close the through hole when the heating module is in operation and to open the through hole when the circulation module is in operation.

12. In paragraph 11, The above blocking module, A shutter having an open hole corresponding to the above through hole; and A high-pressure substrate processing device comprising a drive unit that moves the shutter between a first position in which the open hole is positioned so as to be misaligned with respect to the through hole and a second position in which the open hole is positioned so as to correspond to the through hole.

13. A step of supplying a reaction gas at a first pressure higher than atmospheric pressure to an internal chamber containing a substrate to be processed; A step of supplying a protective gas to an outer chamber accommodating the inner chamber at a second pressure set in relation to the first pressure; A step of heating the reaction gas to a reaction temperature using a heating module, so that the substrate to be processed is processed at the first pressure and the reaction temperature; A step of providing cooling gas to the duct at a third pressure set in relation to the second pressure; and A high-pressure substrate processing method, comprising the step of connecting the duct with the external chamber and circulating the cooling gas along a closed-loop circulation path passing through the duct, the heating module, and the external chamber to cool the substrate.

14. In paragraph 13, The step of providing cooling gas to the above duct at a third pressure set in relation to the above second pressure is: A high pressure substrate processing method, comprising a step of setting the third pressure to be equal to the second pressure.

15. In paragraph 13, The step of heating the reaction gas to a reaction temperature using the heating module so that the substrate to be processed is processed at the first pressure and the reaction temperature is A step of closing a through hole formed in the heating module that heats the reaction gas, thereby blocking the discharge of heat generated in the heating module through the through hole, The step of connecting the duct with the external chamber and circulating the cooling gas along a closed-loop circulation path connecting the duct and the external chamber to cool the substrate is as follows: A high-pressure substrate processing method, comprising the step of opening the through hole to allow the cooling gas to flow toward the inner chamber through the through hole.

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