Power semiconductor measuring device and probe jig

Abstract

In a first probe jig (3) of a power semiconductor measuring device (1), a plurality of first contact plates (5) are stacked. Each first contact plate (5) is provided with a plate body (7), a first arm portion (9) that comes into contact with a power semiconductor module (61), and a second arm portion (11) that comes into contact with an inspection circuit portion (25). The first probe jig (3) is attached to a stage body (35) by means of a support shaft (41) and a coil spring (43) so as to be capable of swinging in a vertical direction. A press unit (47) includes: a module pressing portion (49) that presses the power semiconductor module (61); and a probe jig load plunger (51) that presses the first probe jig (3).

Description

Power semiconductor measuring device and probe jig

[0001] The present disclosure relates to a power semiconductor measuring device and a probe jig.

[0002] Power semiconductor measuring devices are used to measure (inspect) power semiconductor devices through which large currents flow. As power semiconductor devices become smaller, the pitch between terminals of the power semiconductor devices becomes narrower.

[0003] To measure such power semiconductor devices, a contact probe made of stacked metal sheets has been proposed. With this contact probe, the power semiconductor device is measured by bringing each of the stacked metal sheets into contact with a corresponding terminal on the power semiconductor device and electrically connecting each of the metal sheets in contact with the terminal to an inspection circuit via lead wires.

[0004] Furthermore, in order to improve on contact probes that use lead wires, a contact probe that does not use lead wires has been proposed (Patent Document 1). This contact probe employs a structure in which each thin metal plate that contacts the terminals of a power semiconductor device is brought into contact with an inspection circuit.

[0005] JP 2017-142220 A

[0006] There is a demand for power semiconductor measuring devices that automate a series of measurements from when a power semiconductor device is loaded to when it is unloaded, thereby shortening the time required for measurement. When inspecting a power semiconductor device, a power semiconductor measuring device typically has a mechanism for biasing (loading) the power semiconductor device against a stage in order to pass a large current through the power semiconductor device. To achieve automation, the power semiconductor device must be transported without interfering with this mechanism. Therefore, with the above-mentioned contact probe, there is a demand for the contact probe to quickly transition from a state in contact with the inspection circuit to a state in which it is not in contact with the inspection circuit when the power semiconductor device is unloaded.

[0007] The present disclosure has been made as part of such developments, and one object of the present disclosure is to provide a power semiconductor measuring device that can automate a series of measurements of power semiconductor devices and reduce the time required for the measurements, and another object is to provide a probe jig to be used in such a power semiconductor measuring device.

[0008] The power semiconductor measuring device according to the present disclosure is a power semiconductor measuring device for measuring the electrical characteristics of a power semiconductor device, and includes an inspection circuit unit, a probe jig with stacked contact plates, and a release mechanism. The inspection circuit unit measures the electrical characteristics of the power semiconductor device. The probe jig with stacked contact plates contacts the power semiconductor device and also contacts the inspection circuit unit, thereby electrically connecting the power semiconductor device to the inspection circuit unit. The release mechanism releases the probe jig from a state in which the power semiconductor device is electrically connected to the inspection circuit unit to a state in which the probe jig is not in contact with the inspection circuit unit.

[0009] A probe jig according to the present disclosure includes one or more contact plates for contacting a power semiconductor device. The contact plates include a plate body, a first arm portion, and a second arm portion. The plate body has a width in a first direction and extends in a second direction intersecting the first direction, with a first end and a second end facing each other and spaced apart in the second direction. The first arm portion extends from the first end of the plate body toward the side opposite the second end, away from the plate body. The second arm portion extends from the second end of the plate body.

[0010] The power semiconductor measuring device according to the present disclosure includes a release mechanism that releases the probe jig from a state in which the power semiconductor device is electrically connected to the inspection circuit unit to a state in which the probe jig is not in contact with the inspection circuit unit. This allows the probe jig to quickly transition from a state in which it is in contact with the inspection circuit unit to a state in which it is not in contact with the inspection circuit unit. As a result, a series of measurements of the power semiconductor device can be automated, contributing to shortening the time required for measurement.

[0011] According to the probe jig of the present disclosure, when applied to a probe jig in a power semiconductor measuring device, it is possible to automate a series of measurements of a power semiconductor device, thereby contributing to shortening the time required for measurement.

[0012] 12 is a side view showing a power semiconductor measuring apparatus according to a first embodiment. FIG. 13 is a front view showing the power semiconductor measuring apparatus in the same embodiment. FIG. 14 is a side view showing a first probe jig and a second probe jig installed on a stage main body in the same embodiment. FIG. 15 is a perspective view showing the first probe jig and the second probe jig installed on a stage main body in the same embodiment. FIG. 16 is a plan view showing a first contact plate applied to the first probe jig in the same embodiment. FIG. 17 is a first perspective view for explaining the structure of the first probe jig in the same embodiment. FIG. 18 is a second perspective view for explaining the structure of the first probe jig in the same embodiment. FIG. 19 is a side view showing one step of measuring a power semiconductor device by the power semiconductor measuring apparatus in the same embodiment. FIG. 19 is a partially enlarged side view showing the inside of a dotted line frame W1 shown in FIG. 8 in the same embodiment. FIG. 19 is a side view showing a step performed after the step shown in FIG. 8 in the same embodiment. FIG. 19 is a partially enlarged side view showing the inside of a dotted line frame W2 shown in FIG. 10 in the same embodiment. FIG. 19 is a side view showing a step performed after the step shown in FIG. 10 in the same embodiment. FIG. 19 is a partially enlarged side view showing the state of the periphery of the stage main body at the step shown in FIG. 12 in the same embodiment. 14. FIG. 15 is a partially enlarged side view showing a step performed after the step shown in FIG. 13 in the same embodiment. FIG. 16 is a partially enlarged side view showing the state of the first contact plate in the step shown in FIG. 14 in the same embodiment. FIG. 17 is a partially enlarged side view showing a step performed after the step shown in FIG. 14 in the same embodiment. FIG. 18 is a plan view showing a first contact plate of a first probe jig in a power semiconductor measuring apparatus according to embodiment 2. FIG. 19 is a partially enlarged side view showing the state of the first contact plate when measuring a power semiconductor device in the same embodiment. FIG. 20 is a side view showing a power semiconductor measuring apparatus according to embodiment 3. FIG. 21 is a side view showing the first probe jig and the second probe jig installed on the stage main body in the same embodiment. FIG. 22 is a perspective view showing the first probe jig and the second probe jig installed on the stage main body in the same embodiment. FIG. 23 is a plan view showing a first contact plate applied to the first probe jig in the same embodiment.23 is a partially enlarged side view showing a step of measuring the power semiconductor device by the power semiconductor measuring device in the embodiment. FIG. 24 is a partially enlarged side view showing a state of a first contact plate when measuring the power semiconductor device in the embodiment. FIG. 25 is a partially enlarged side view showing a step performed after the step shown in FIG. 23 in the embodiment.

[0013] First Embodiment An example of a power semiconductor measuring device according to a first embodiment and a probe jig used therein will be described.

[0014] First, the overall structure of a power semiconductor measuring device 1 that measures a power semiconductor module will be described. As shown in Figures 1 and 2, the power semiconductor measuring device 1 includes a first probe jig 3 for large current terminals, a second probe jig 27 for signal terminals, an inspection circuit section 25, and a stage unit 33. The stage unit 33 has a stage main body 35 that includes a cooling stage 37. The first probe jig 3 and the second probe jig 27 are installed on the stage main body 35.

[0015] The stage unit 33 also has a stage drive section 45 that drives the stage main body 35 in the horizontal direction (front-back, left-right). The stage main body 35 is moved by the stage drive section 45 between a measurement position P1 where the power semiconductor module 61 is measured and a carry-in / carry-out position P2 where the power semiconductor module 61 is carried in and out. The inspection circuit section 25 is disposed near the stage main body 35 when it is disposed at the measurement position P1. Furthermore, a positioning guide 39 that determines the position of the power semiconductor module 61 is disposed on the stage main body 35.

[0016] Furthermore, the power semiconductor measuring device 1 includes a press unit 47 including a module pressing section 49 and a probe jig load plunger 51 serving as a probe pressing section. The power semiconductor module 61 placed on the stage main body 35 is pressed toward the stage main body 35 by the module pressing section 49 at the measurement position P1. The first probe jig 3 and the second probe jig 27 are pressed toward the stage main body 35 by the probe jig load plunger 51 having a spring mechanism. The power semiconductor module 61 is brought into contact with each of the first probe jig 3 and the second probe jig 27 by the press unit 47, thereby being electrically connected to them.

[0017] Of the multiple lead terminals 65 in the power semiconductor module 61, the lead terminals 67 related to the large current are electrically connected to the first probe jig 3, and the lead terminals 69 related to the signal current are electrically connected to the second probe jig 27. In addition, the first probe jig 3 is electrically connected to the inspection circuit unit 25. As a result, the lead terminals 67 related to the large current in the power semiconductor module 61 are electrically connected to the inspection circuit unit 25 via the first probe jig 3.

[0018] The power semiconductor measuring device 1 also includes a transport unit 53 including a holder 55 and a holder driver 57. The holder 55 includes, for example, a suction or gripping mechanism. At the carry-in / carry-out position, the power semiconductor module 61 to be measured (inspected) is carried into the stage unit 33 by the holder 55. After measurement, the power semiconductor module 61 is carried out of the stage unit 33 by the holder 55. The position of the holder 55 is changed by the holder driver 57.

[0019] Next, a more detailed description will be given of the first probe jig 3 for large currents and the second probe jig 27 for signal terminals, which are arranged on the stage main body 35 (stage unit 33). As shown in Figures 3 and 4, the first probe jig 3 and the second probe jig 27 are arranged to face each other at a distance and sandwich the area where the power semiconductor module 61 is to be placed.

[0020] The first probe jig 3 has a plurality of stacked first contact plates 5. As will be described later, the first contact plate 5 includes a plate body 7, a first arm portion 9 that comes into contact with the lead terminals 67 of the power semiconductor module 61, and a second arm portion 11 that comes into contact with the inspection circuit unit 25 (see FIG. 5 ).

[0021] The first probe jig 3 is attached to the stage body 35 so as to be swingable in the vertical direction (arrow YV) in such a manner that a coil spring 43 is interposed between the first probe jig 3 and the stage body 35, and a support shaft 41 is inserted through the coil spring 43 and the first probe jig 3 (holder 19). The support shaft 41 and the holder 19 through which the support shaft 41 is inserted function as guide members.

[0022] A plurality of second contact plates 29 for signal terminals are stacked on the second probe jig 27. The second contact plates 29 come into contact with the lead terminals 69 of the power semiconductor module 61. The second contact plates 29 have lead wire connection portions 31.

[0023] The second probe jig 27 is also attached to the stage body 35 (stage unit 33) so as to be swingable in the vertical direction (arrow YV) in a manner that a coil spring 43 is interposed between the second probe jig 27 and the stage unit 33, and a support shaft 41 is inserted through the coil spring 43 and the second probe jig 27 (holder 19).

[0024] Next, the first probe jig 3 will be described in more detail. First, the first contact plate 5 will be described. For ease of explanation, X-Y coordinate axes will be used here. As shown in FIG. 5 , each of the multiple first contact plates 5 has a plate body 7, a first arm portion 9, and a second arm portion 11. The plate body 7 is formed so as to have a width in the Y-axis direction, which is the first direction, and to extend in the X-axis direction, which is the second direction.

[0025] The plate body 7 has a first end 7a and a second end 7b that face each other and are spaced apart in the X-axis direction. The first arm 9 is formed to extend from the first end 7a toward the side opposite the side where the second end 7b is located (the positive direction of the X-axis). The first arm 9 is formed to protrude from one end of the first end 7a in the width direction (the end on the negative side of the Y-axis).

[0026] The second arm 11 extends from the second end 7 b toward the opposite side (negative direction of the X axis) from the side where the first end 7 a is located, and protrudes from the other end of the second end 7 b in the width direction (positive end of the Y axis).

[0027] Furthermore, a plurality of through holes 13 are formed in the plate body 7. Each of the plurality of through holes 13 is formed so as to penetrate through the plurality of first contact plates 5 when the first contact plates 5 are stacked.

[0028] Next, a description will be given of the first probe jig 3, which is formed by stacking a plurality of first contact plates 5. As shown in Fig. 6, the stacked plurality of first contact plates 5 are held by holders 19. The holders 19 include a first holder 19a, a second holder 19b, a third holder 19c, and a fourth holder 19d (see Fig. 6).

[0029] The first probe jig 3 includes a first portion 3a electrically connected to a lead terminal 67a (positive electrode) of the power semiconductor module 61, and a second portion 3b electrically connected to a lead terminal 67b (negative electrode). In the first portion 3a, a plurality of stacked first contact plates 5 are sandwiched between a first holder 19a and a second holder 19b.

[0030] In the second portion 3 b, the stacked first contact plates 5 are sandwiched between the second holder 19 b and the third holder 19 c. In each of the first portion 3 a and the second portion 3 b, the stacked first contact plates 5 are arranged such that the first arm portions 9 are stacked on one another and the second arm portions 11 are stacked on one another.

[0031] Each of first holder 19a, second holder 19b, and third holder 19c has an opening formed therein that communicates with through hole 13 formed in first contact plate 5. In first portion 3a, support rods 21 serving as support members are inserted into the opening formed in first holder 19a, through hole 13 formed in the stacked first contact plates 5, and openings formed in second holder 19b, thereby holding the stacked first contact plates 5 between first holder 19a and second holder 19b.

[0032] In addition, in the second part 3b, the stacked first contact plates 5 are held between the third holder 19c and the second holder 19b by inserting a support rod 21 as a support member into an opening formed in the third holder 19c, a through hole 13 formed in the stacked first contact plates 5, and an opening formed in the second holder 19b.

[0033] It is desirable that the first holder 19a, the second holder 19b, the third holder 19c, and the support rod 21 are each made of an insulating material. Alternatively, the first holder 19a, the second holder 19b, the third holder 19c, and the support rod 21 may each be made of a conductive material. In this case, an insulating material must be interposed between the support rod 21 and the first contact plate 5. Also, an insulating material must be interposed between the first holder 19a, the second holder 19b, and the third holder 19c and the first contact plate 5.

[0034] In each of the first portion 3 a and the second portion 3 b, it is not necessarily necessary to electrically insulate the stacked first contact plates 5 from each other, but an insulating sheet or the like may be sandwiched between the first contact plates 5. In this case, interference between adjacent first contact plates 5 is suppressed, and deformation of the first arm portion 9 or the second arm portion 11 can be promoted.

[0035] 7, the stacked first contact plates 5 are further held by a fourth holder 19d. The fourth holder 19d is disposed between the first holder 19a and the third holder 19c, straddling the stacked first contact plates 5. The fourth holder 19d has a shaft hole 23 formed in both the portion facing the first holder 19a and the portion facing the third holder 19c.

[0036] A coil spring 43 is attached to a support shaft 41 that is erected on the stage main body 35. The support shaft 41 is inserted into a shaft hole 23 formed in the fourth holder 19d in a manner that the coil spring 43 is interposed between the stage main body 35 and the fourth holder 19d. In other words, the support shaft 41 is inserted through the coil spring 43 and the shaft hole 23 in a manner that the coil spring 43 is interposed between the stage main body 35 and the first probe jig 3. Note that in FIG. 7 , the coil spring 43 and the support shaft 41 located at the back are not shown in order to avoid complication of the drawing.

[0037] Thus, in the power semiconductor measuring device 1 according to the first embodiment, the first probe jig 3 is attached to the stage body 35 so as to be swingable in the vertical direction by the elastic force of the coil spring 43 and the pressing force of the press unit 47, with the shaft hole 23 and the support shaft 41 inserted into the shaft hole 23 serving as guide members.

[0038] Next, the second probe jig 27 for the signal terminals will be described. As shown in Figures 3 and 4, the second probe jig 27 has a plurality of stacked second contact plates 29. The stacked second contact plates 29 are held by a holder 19 or the like. The second contact plates 29 come into contact with the lead terminals 69 of the power semiconductor module 61. The second contact plates 29 have lead wire connection portions 31. A connector (not shown) of a control lead wire that supplies a signal current is connected to the lead wire connection portion 31.

[0039] Similar to the first probe jig 3, the second probe jig 27 has a support shaft 41 inserted through the coil spring 43 and the holder 19, with the coil spring 43 interposed between the stage body 35 and the second probe jig 27. The second probe jig 27 is attached to the stage body 35 so as to be swingable in the up and down direction by the elastic force of the coil spring 43 and the pressing force of the press unit 47.

[0040] Furthermore, the above-described first probe jig 3, second probe jig 27, etc. are formed relative to the stage main body 35 as follows: When the first probe jig 3 and second probe jig 27 are pressed by the probe jig load plunger 51 and the first probe jig 3 and second probe jig 27 are positioned at their lowest points, there is a state in which the module pressing portion 49 is not in contact with the power semiconductor module 61. In this state, the first probe jig 3, second probe jig 27, etc. are formed so that a gap is formed between the power semiconductor module 61 and the stage main body 35. The power semiconductor measuring device 1 according to the first embodiment is configured as described above.

[0041] Next, we will explain the steps (procedures) for measuring a power semiconductor module 61 using the above-described power semiconductor measuring device 1. First, as shown in Figures 8 and 9, the stage main body 35 (stage unit 33) is moved to the carry-in / carry-out position P2 by the stage driving section 45. Next, the power semiconductor module 61 to be measured is held by the holding section 55 of the transport unit 53 and moved to directly above the stage unit 33 positioned at the carry-in / carry-out position P2.

[0042] 10 , the holding portion 55 is lowered, and the held power semiconductor module 61 is placed on the stage main body 35 (stage unit 33). At this time, the positioning guide 39 places the power semiconductor module 61 at a predetermined position on the stage main body 35.

[0043] 11 , at this time, the large current lead terminals 67 of the power semiconductor module 61 come into contact with the first arm portions 9 of the first probe jig 3. Also, the signal lead terminals 69 of the power semiconductor module 61 come into contact with the second contact plates 29 of the second probe jig 27.

[0044] 12, the stage main body 35 (stage unit 33) on which the power semiconductor module 61 is placed is moved to the measurement position P1 by the stage driving unit 45. Next, as shown in FIG. 13, the module pressing portion 49 of the press unit 47 is lowered. At this time, the probe jig load plunger 51 also lowers.

[0045] Next, as shown in FIG. 14, the probe jig loading plunger 51 is brought into contact with each of the first probe jig 3 and the second probe jig 27, and each of the first probe jig 3 and the second probe jig 27 is pressed downward against the elastic force of the coil spring 43, until the first probe jig 3 and the second probe jig 27 are positioned at their lowest points.

[0046] When the first probe jig 3 and the second probe jig 27 are positioned at their lowest points, there is a gap between the power semiconductor module 61 and the stage body 35 (cooling stage 37). Also, the second arm portion 11 of the first probe jig 3 comes into contact with the inspection circuit portion 25. Next, the module pressing portion 49 lowers the power semiconductor module 61 (mold resin 63) so that the power semiconductor module 61 comes into contact with the stage body 35.

[0047] 15, these operations cause the first arm portion 9 in contact with the lead terminal 67 to elastically deform toward the stage main body 35 (see FIG. 14). Meanwhile, the second arm portion 11 in contact with the inspection circuit unit 25 elastically deforms upward. Also, the second contact plate 29 in contact with the lead terminal 69 elastically deforms toward the stage main body 35 (not shown).

[0048] In this state, a signal current is applied to the lead terminal 69 of the power semiconductor module 61 via the control lead wire (not shown), the lead wire connecting portion 31, and the second probe jig 27. Also, a large current is applied to the lead terminal 67 of the power semiconductor module 61 via the inspection circuit portion 25, the second arm portion 11, and the first arm portion 9. The application of this signal current and large current allows the electrical characteristics of the power semiconductor module 61 to be measured (inspected).

[0049] 16, when the measurement of the electrical characteristics is completed, the module pressing portion 49 of the press unit 47 and the probe jig loading plunger 51 are raised as shown by the arrow Y2. In particular, as the probe jig loading plunger 51 is raised, the pressing force pressing the first probe jig 3 is eliminated, and the first probe jig 3 is raised as shown by the arrow Y5 by the elastic force of the coil spring 43.

[0050] As a result, the second arm 11, which had been in contact with the upper end of the inspection circuit unit 25, moves upward away from the upper end. That is, the probe jig load plunger 51 and the coil spring 43 function as a release mechanism that releases the first probe jig 3 so that the second arm 11 (first probe jig 3) is not in contact with the inspection circuit unit 25.

[0051] Next, the stage driving unit 45 is driven to move the stage main body 35 from the measurement position P1 to the carry-in / carry-out position P2 (see FIG. 10). At this time, the stage main body 35 on which the power semiconductor module 61 is placed can be moved without interfering with the probe jig load plunger 51 and the coil spring 43. Next, the power semiconductor module 61 placed on the stage main body 35 is sucked by the holder 55 of the transport unit 53 and carried out from the stage main body 35 (see FIG. 8). In this way, a series of measurements of the electrical characteristics of the power semiconductor module 61 is completed.

[0052] In the above-described power semiconductor measuring device 1, when the probe jig loading plunger 51 is raised from a state in which the first probe jig 3 is being pressed by the probe jig loading plunger 51, the pressing force pressing the first probe jig 3 is released. With the pressing force released, the first probe jig 3 is quickly raised by the elastic force of the coil spring 43. As the first probe jig 3 rises, the second arm portion 11, which was in contact with the upper end of the inspection circuit unit 25, moves upward away from the upper end of the inspection circuit unit 25.

[0053] This allows the first probe jig 3 to quickly transition from a state in which it is in contact with the inspection circuit unit 25 to a state in which it is not in contact with the inspection circuit unit 25. As a result, it is possible to automate the series of measurements of the electrical characteristics of the power semiconductor module 61, thereby contributing to shortening the time required for the measurements.

[0054] Second Embodiment An example of a power semiconductor measuring device 1 according to a second embodiment will be described. Here, an example of a variation of the first contact plate 5 applied to the first probe jig 3 will be described. Note that the configuration other than this is the same as the configuration of the power semiconductor measuring device 1 described in the first embodiment, so the same members are given the same reference numerals, and the description thereof will not be repeated unless necessary.

[0055] 17 , the first contact plate 5 is provided with a first cutout 15 and a second cutout 17. The first cutout 15 is formed to extend in the X-axis direction from the first end 7 a toward the second end 7 b, with the plate main body 7 and the first arm 9 spaced apart in the Y-axis direction. The second cutout 17 is formed to extend in the X-axis direction from the second end 7 b toward the first end 7 a, with the plate main body 7 and the second arm 11 spaced apart in the Y-axis direction.

[0056] The steps for measuring the power semiconductor module 61 using the above-described power semiconductor measuring device 1 are the same as those described in embodiment 1. At the carry-in / carry-out position P2, the power semiconductor module 61 is placed on the stage body 35, and the stage body 35 is moved to the measurement position P1, after which the electrical characteristics of the power semiconductor module 61 are measured.

[0057] In the step of measuring the electrical characteristics of the power semiconductor module 61, similar to the step shown in FIG. 15, as shown in FIG. 18, with the second arm portion 11 of the first probe jig 3 in contact with the inspection circuit portion 25, the power semiconductor module 61 is lowered by the module pressing portion 49, and the power semiconductor module 61 is brought into contact with the stage main body 35 (see FIG. 14).

[0058] Next, in this state, the electrical characteristics of the power semiconductor module 61 are measured. After the measurement of the electrical characteristics is completed, the module pressing portion 49 of the press unit 47 and the probe jig load plunger 51 are raised (see FIG. 16 ). As a result, the second arm portion 11, which had been in contact with the upper end of the inspection circuit portion 25, moves upward away from the upper end, as described above.

[0059] Next, the stage driving unit 45 is driven to move the stage main body 35 to the carry-in / carry-out position P2, and then the power semiconductor module 61 is carried out from the stage main body 35 (see FIG. 8 ). In this way, a series of measurements of the electrical characteristics of the power semiconductor module 61 is completed.

[0060] First, in the above-described power semiconductor measuring device 1, similar to the previously described power semiconductor measuring device 1, the measurement of a series of electrical characteristics of the power semiconductor module 61 can be automated, thereby contributing to shortening the time required for measurement.

[0061] Furthermore, in the above-described power semiconductor measuring device 1, the first contact plate 5 of the first probe jig 3 is provided with a first cutout portion 15 and a second cutout portion 17. As a result, as shown in Fig. 18, in a state in which the second arm portion 11 of the first probe jig 3 is in contact with the inspection circuit portion 25 and further the power semiconductor module 61 is in contact with the stage main body 35 (see Fig. 14) by the module pressing portion 49, the stroke amount VR when each of the first arm portion 9 and the second arm portion 11 elastically deforms can be increased compared to a case in which the first cutout portion 15 and the second cutout portion 17 are not formed.

[0062] Here, the state in which the lead terminal 65 comes into contact with the first arm portion 9 may be, for example, a state in which the lead terminal 65 comes into contact with the first arm portion 9 while being tilted relative to the first arm portion 9. In addition, for example, a case in which the surface of the inspection circuit portion 25 with which the second arm portion 11 comes into contact is tilted or the surface of the inspection circuit portion 25 has irregularities may be assumed.

[0063] Even in such a case, by increasing the stroke amount VR when the first arm portion 9 elastically deforms, the first arm portion 9 can be made to follow the lead terminal 65 that is tilted with respect to the first arm portion 9, and the first arm portion 9 can be brought into close contact with the lead terminal 65. Furthermore, by increasing the stroke amount VR when the second arm portion 11 elastically deforms, the second arm portion 11 can be made to follow the uneven surface of the inspection circuit portion 25, and the second arm portion 11 can be brought into close contact with the surface of the inspection circuit portion 25. As a result, the electrical characteristics of the power semiconductor module 61 can be measured stably.

[0064] Third Embodiment An example of a power semiconductor measuring device according to a third embodiment and a probe jig used therein will be described.

[0065] First, the overall structure of the power semiconductor measuring apparatus 1 will be described. As shown in Figures 19, 20, and 21, in the power semiconductor measuring apparatus 1, the first probe jig 3 and the second probe jig 27 are fixed to a stage body 35. In the first probe jig 3, the stacked first contact plates 5 are held by a holder 19. The holder 19 includes a first holder 19a, a second holder 19b, and a third holder 19c. In this first probe jig 3, no coil spring is interposed between the first probe jig 3 and the stage body 35, and the first holder 19a, the second holder 19b, and the third holder 19c are fixed to the stage body 35.

[0066] Next, the first contact plates 5 in the first probe jig 3 will be described. As shown in Fig. 22, each of the multiple first contact plates 5 has a plate body 7, a first arm portion 9, and a second arm portion 11. The plate body 7 has a width in the Y-axis direction and is formed to extend in the X-axis direction.

[0067] The first contact plate 5 has a first cutout 15 formed from the first end 7a toward the second end 7b, such that the first arm 9 and the plate body 7 are spaced apart in the Y-axis direction. Also, a second cutout 17 is formed along the Y-axis direction between the second arm 11 and the plate body 7, such that the second arm 11 and the plate body 7 are spaced apart in the X-axis direction.

[0068] 21 , in the second probe jig 27, a plurality of stacked second contact plates 29 are held by a holder 19. In this second probe jig 27 as well, no coil spring is interposed between the second probe jig 27 and the stage main body 35, and the holder 19 is fixed to the stage main body 35.

[0069] Since the first probe jig 3 and the second probe jig 27 are fixed to the stage main body 35, no plunger for loading the plunger jig is provided in the press unit 47. Note that other configurations are similar to those of the power semiconductor measuring device 1 described in the first embodiment, and therefore the same members are given the same reference numerals, and the description thereof will not be repeated unless necessary.

[0070] Next, a description will be given of the process for measuring the power semiconductor module 61 using the above-described power semiconductor measuring device 1. After going through the same processes as those shown in Figures 8 to 11 described above, the power semiconductor module 61 is placed on the stage main body 35. Next, as shown in Figure 23, the stage unit 33 (stage main body 35) on which the power semiconductor module 61 is placed is moved to a measurement position P1 by the stage driving unit 45, as shown by arrow Y3.

[0071] When the stage unit 33 is placed at the measurement position P1, the second arm portion 11 of the first probe jig 3 comes into contact with the side portion of the inspection circuit unit 25. Next, as shown by arrow Y1, the module pressing portion 49 of the press unit 47 is lowered to press the power semiconductor module 61 and bring the power semiconductor module 61 into contact with the stage body 35.

[0072] 24, these operations cause the first arm portion 9 in contact with the lead terminal 67 to elastically deform toward the stage main body 35. Also, the second arm portion 11 in contact with the side of the inspection circuit unit 25 to elastically deform toward the plate main body 7. Meanwhile, the second contact plate 29 in contact with the lead terminal 69 elastically deforms toward the stage main body 35 (not shown). In this state, the electrical characteristics of the power semiconductor module 61 are measured.

[0073] 25, when the measurement of the electrical characteristics is completed, the module pressing portion 49 of the press unit 47 is raised as indicated by the arrow Y3. Also, the stage driving portion 45 moves the stage main body 35 from the measurement position P1 toward the carry-in / carry-out position P2 (see FIG. 19) as indicated by the arrow Y4.

[0074] As a result, the second arm 11, which had been in contact with the side of the inspection circuit unit 25, moves laterally away from that side. That is, the module pressing unit 49 and the stage driving unit 45 function as a release mechanism that releases the first probe jig 3 so that the first probe jig 3 (second arm 11) is not in contact with the inspection circuit unit 25.

[0075] After the stage body 35 is moved to the carry-in / carry-out position P2, the power semiconductor module 61 placed on the stage body 35 is sucked by the holder 55 of the transport unit 53 and carried out from the stage body 35 (see FIG. 8 ). In this way, a series of measurements of the electrical characteristics of the power semiconductor module 61 is completed.

[0076] In the above-described power semiconductor measuring device 1, the module pressing unit 49 is raised from a state in which the power semiconductor module 61 is pressed by the module pressing unit 49. Next, the stage driving unit 45 moves the stage main body 35 from the measurement position P1 toward the carry-in / carry-out position P2 (see FIG. 19 ).

[0077] As the stage body 35 on which the power semiconductor module 61 is placed moves, the second arm portion 11 that was in contact with the side portion of the inspection circuit unit 25 moves laterally away from the side portion of the inspection circuit unit 25. This allows the first probe jig 3 to quickly transition from a state in which it is in contact with the inspection circuit unit 25 to a state in which it is not in contact with the inspection circuit unit 25. As a result, it is possible to automate a series of measurements of the electrical characteristics of the power semiconductor module 61, contributing to shortening the time required for the measurements.

[0078] Note that the inspection circuit unit 25 may be moved to separate the second arm portion 11 that has been in contact with the side portion of the inspection circuit unit 25 from the inspection circuit unit 25. In addition, in each embodiment, the first probe jig 3 including the first contact plate 5 including the first arm portion 9 and the second arm portion 11 has been described as being applied to a large current terminal of a power semiconductor module 61. However, the first probe jig 3 is not limited to this, and may also be applied to a signal terminal of a power semiconductor module 61.

[0079] The power semiconductor measuring devices and first contact probe jigs described in the respective embodiments can be combined in various ways as needed.

[0080] The embodiments disclosed herein are examples and are not intended to be limiting. The scope of the present disclosure is defined by the scope of the claims, not the scope described above, and is intended to include all modifications within the meaning and scope equivalent to the scope of the claims.

[0081] The present disclosure is effectively utilized in a probe jig in which contact plates are stacked, and a power semiconductor measuring device including the probe jig.

[0082] 1 Power semiconductor measuring device, 3 First probe jig, 3a First part, 3b Second part, 5 First contact plate, 7 Plate body, 7a First end, 7b Second end, 9 First arm part, 11 Second arm part, 13 Through hole, 15 First notch part, 17 Second notch part, 19 Holder, 19a First holder, 19b Second holder, 19c Third holder, 19d Fourth holder, 21 Support rod, 23 Shaft hole, 25 Inspection circuit part, 27 Second probe jig, 29 Second contact plate, 31 Lead wire connection part, 33 Stage unit, 35 Stage body, 37 Cooling stage, 39 Positioning guide, 41 Support shaft, 43 Coil spring, 45 Stage drive part, 47 Press unit, 49 Module pressing part, 51 Probe jig load plunger, 53 Transport unit, 55 Holding part, 57 Holder drive unit, 61 power semiconductor module, 63 mold resin, 65, 67, 67a, 67b, 69 lead terminal, P1 measurement position, P2 carry-in / carry-out position, Y1, Y2, Y3, Y4, Y5, YV, VR arrows.

Claims

1. A power semiconductor measuring device for measuring electrical characteristics of a power semiconductor device, comprising: an inspection circuit section for measuring the electrical characteristics of the power semiconductor device; a probe jig having stacked contact plates that comes into contact with the power semiconductor device and, by coming into contact with the inspection circuit section, electrically connects the power semiconductor device to the inspection circuit section; and a release mechanism that releases the probe jig from a state in which the power semiconductor device is electrically connected to the inspection circuit section to a state in which the probe jig is not in contact with the inspection circuit section.

2. The power semiconductor measuring device as claimed in claim 1, wherein the contact plate comprises: a plate body having a width in a first direction, extending in a second direction intersecting the first direction, and having a first end and a second end facing each other at a distance in the second direction; a first arm portion extending from the first end of the plate body toward the side opposite to the side on which the second end is located, and away from the plate body, and coming into contact with the power semiconductor device; and a second arm portion extending from the second end of the plate body and coming into contact with the inspection circuit unit, and the release mechanism includes a mechanism for moving the second arm portion away from the inspection circuit unit.

3. A power semiconductor measuring device as described in claim 2, wherein the second arm portion extends from the second end of the plate body toward the opposite side to the side on which the first end is located, and away from the plate body, and measurement of the power semiconductor device is performed with the second arm portion in contact with an upper end of the inspection circuit portion, and the release mechanism includes a mechanism for moving the second arm portion away from the upper end of the inspection circuit portion.

4. A power semiconductor measuring device as claimed in claim 3, comprising: a stage section on which the probe jig is arranged and on which the power semiconductor device is placed with lead terminals protruding from the power semiconductor device supported from below by the first arm section; an elastic section arranged on the stage section and having an elastic force for urging the probe jig upward from the stage section; and a press unit including a probe pressing section for contacting the second arm section with the upper end section of the inspection circuit section by pressing the probe jig from above towards the stage section against the elastic force of the elastic section, wherein the release mechanism is configured to move the second arm section upwardly away from the upper end section of the inspection circuit section by the elastic force by eliminating the pressing force pressing the probe jig by the probe pressing section.

5. A power semiconductor measuring device as described in claim 2, wherein the second arm portion extends from the second end of the plate body in a direction intersecting the direction in which the first arm portion extends, and measurement of the power semiconductor device is performed with the second arm portion in contact with a side portion of the inspection circuit portion, and the release mechanism is configured to move the second arm portion away from the side portion of the inspection circuit portion.

6. A power semiconductor measuring device as described in claim 5, further comprising a stage unit including a stage portion on which the probe jig is disposed and on which the power semiconductor device is placed with lead terminals protruding from the power semiconductor device supported from below by the first arm portion, the stage unit including a stage drive portion which moves the stage portion, and the release mechanism is configured to move the stage portion by the stage drive portion from a state in which the second arm portion is in contact with the inspection circuit portion so that the second arm portion moves laterally away from the side of the inspection circuit portion.

7. A probe jig having one or more contact plates for contacting a power semiconductor device, wherein the contact plates comprise: a plate body having a width in a first direction and extending in a second direction intersecting the first direction, the plate body having a first end and a second end opposed to each other and spaced apart in the second direction; a first arm portion extending from the first end of the plate body toward the opposite side to the side on which the second end is located, away from the plate body; and a second arm portion extending from the second end of the plate body.

8. A probe jig as claimed in claim 7, wherein said second arm portion extends from said second end of said plate body toward the opposite side to the side on which said first end is located, and away from said plate body.

9. A probe jig as described in claim 8, wherein a first notch is formed in said contact plate from said first end toward said second end such that said first arm portion and said plate body are spaced apart in said first direction.

10. A probe jig as described in claim 9, wherein a second notch is formed in the contact plate from the second end toward the first end such that the second arm portion and the plate body are spaced apart in the first direction.

11. A probe jig as described in claim 7, wherein the second arm portion extends from the second end of the plate body in a direction intersecting the direction in which the first arm portion extends.

12. A probe jig as described in claim 11, wherein said contact plate has a first notch formed from said first end toward said second end such that said first arm portion and said plate body are spaced apart in said first direction, and wherein said second arm portion and said plate body are spaced apart in said second direction, and wherein said second notch is formed between said second arm portion and said plate body along said first direction such that said second arm portion and said plate body are spaced apart in said second direction.

13. A probe jig as claimed in any one of claims 7 to 12, comprising: a support member arranged to penetrate each of the contact plates when the contact plates are stacked; and a holder for holding the contact plates with the support member arranged thereon.

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