Substrate processing apparatus and plasma generation unit

Abstract

Provided is a substrate processing apparatus for processing a substrate, comprising: a housing having a processing space; a support unit which is arranged inside the processing space and which supports the substrate; a gas supply unit for supplying a process gas into the processing space; and a plasma generation unit, which forms an induced magnetic field in the processing space so as to excite the process gas into a plasma state, wherein the plasma generation unit comprises: an antenna having a plurality of segmented bodies arranged in series with each other and having a segmented space formed between the segmented bodies that are adjacent to each other; and an adjusting body which is inserted into the segmented space, and of which the location can be adjusted.

Description

Substrate processing device and plasma generation unit

[0001] The present invention relates to a substrate processing device and a plasma generation unit for processing a substrate.

[0002]

[0003] To manufacture semiconductor devices or flat panel display panels, various processes are performed, including deposition processes, photolithography processes, etching processes, and cleaning processes. Among these processes, the etching process includes dry etching processes and wet etching processes. The dry etching process mainly etches the substrate by generating plasma discharge in the etching target area of ​​the substrate.

[0004] Among the plasma etching devices used in the dry etching process, there is an induction plasma generation device that forms a plasma electric field within a chamber by applying high-frequency power to an antenna.

[0005] The antenna used in the induction plasma generator is formed into a circular ring shape and placed in the upper space of the substrate. The length of the antenna is designed to be no longer than 1 / 4 of the wavelength of the electromagnetic wave being generated. This is because, if the antenna length increases beyond 1 / 4 of the electromagnetic wave wavelength, standing waves are generated, and the magnetic field generated by these standing waves is not uniform, thereby degrading plasma uniformity.

[0006] However, this limitation of the entire antenna acts as a technical obstacle in the current technology market where substrates are becoming larger in area.

[0007] Accordingly, the antenna is distributed in a parallel configuration with multiple antennas so that the wavelength of the electromagnetic wave does not increase by more than 1 / 4, but this structure of combining multiple antennas in a parallel configuration causes the input terminal structure of the antenna to be very complex, which increases the size of the equipment and causes a problem of exceeding the specifications of the equipment.

[0008]

[0009] The technical problem of the present invention is to provide a substrate processing device and plasma generating unit that can control the uniformity of the electromagnetic field by preventing the generation of a standing wave even when the total length of the plasma generating unit for generating an induced magnetic field when processing a substrate is not limited, thereby generating a uniform electromagnetic field in the entire plasma generating unit.

[0010] The technical problems to be solved by the present invention are not limited thereto, and those skilled in the art will understand that other technical problems not mentioned can be derived from the configurations used in the specification and drawings below.

[0011]

[0012] The substrate processing device of the present invention for achieving the above-described technical problem comprises a device for processing a substrate, comprising: a housing having a processing space; a support unit disposed inside the processing space and supporting a substrate; a gas supply unit for supplying a processing gas into the processing space; and a plasma generation unit for exciting the processing gas into a plasma state by forming an induced magnetic field inside the processing space; wherein the plasma generation unit comprises an antenna having a plurality of segments arranged in series with each other, and a segment space formed between adjacent segments; and an adjusting body inserted into the segment space and provided so as to be positioned adjustable.

[0013] In one embodiment, the controller may include a distance controller that controls the separation distance of the segmented space.

[0014] In one embodiment, among the segments, one of the segments connected to the segment space further includes an extension region extending in a direction in which the segment space is formed; the extension region is formed with an area smaller than a cross-section of the segment; and the distance adjusting member further includes a stacking region extending in a direction in which the extension region is formed; the stacking region can be stacked on the extension region.

[0015] In one embodiment, the combined area of ​​the cross-section area of ​​the extended region and the cross-section area of ​​the laminated region may be provided to be equal to the area of ​​the cross-section of the segmented body.

[0016] In one embodiment, the distance adjusting member is movable between a first position and a second position, and when each of the first position and the second position is viewed from above, the extension region and the laminated region can at least partially overlap each other.

[0017] In one embodiment, the area where the extension region and the laminated region overlap at the first position and the area where the extension region and the laminated region overlap at the second position may be formed differently from each other.

[0018] In one embodiment, the segmented body and the distance adjusting body are formed of a conductive metal material, and the segmented body and the distance adjusting body can be formed of the same material.

[0019] In one embodiment, the controller may include an area controller disposed between the segmented spaces and provided rotatably.

[0020] According to one embodiment, one side of the segmented body connected to the segmented space and one side of the area adjusting body connected to the segmented space may be provided with different facing areas depending on the rotation angle of the area adjusting body.

[0021] In one embodiment, the capacitance of the segmented space can be varied depending on the rotation angle of the area control body.

[0022] In one embodiment, the segmented body and the area adjusting body are formed of a conductive metal material, and the segmented body and the area adjusting body can be formed of the same material.

[0023] In one embodiment, the length of each of the plurality of segments may be formed to be less than or equal to 1 / 4 of the wavelength of the electromagnetic wave forming the induced magnetic field, and the combined length of the plurality of segments may be formed to be greater than or equal to 1 / 4 of the wavelength of the electromagnetic wave.

[0024] Meanwhile, another substrate processing device of the present invention for achieving the above-described technical problem is a device for processing a substrate, comprising: a housing having a processing space; a support unit disposed inside the processing space and supporting a substrate; a gas supply unit for supplying a processing gas into the processing space; and a plasma generation unit for exciting the processing gas into a plasma state by forming an induced magnetic field in the processing space; wherein the plasma generation unit may include a plurality of segments, each of which is configured with a segment space formed between the segments; and an extension plate, which is configured with a plurality of segments and is disposed spaced apart from each other and inserted into the segment space.

[0025] In one embodiment, the plasma generation unit may further include an insulating plate inserted between the expansion plates and rotating between the expansion plates.

[0026] In one embodiment, the insulating plate can adjust the insulation area between the expansion plates according to the rotation angle, thereby adjusting the storage capacity of the expansion plates.

[0027] In one embodiment, the length of each of the plurality of segments may be formed to be less than or equal to 1 / 4 of the wavelength of the electromagnetic wave forming the induced magnetic field, and the combined length of the plurality of segments may be formed to be greater than or equal to 1 / 4 of the wavelength of the electromagnetic wave.

[0028] On the other hand, the plasma generation unit of the present invention for achieving the above-mentioned technical task is provided in a substrate processing device, and may include a plasma generation unit that forms an induced magnetic field, an antenna having a plurality of segments arranged in series with each other, and a segment space formed between adjacent segments; and a control body inserted into the segment space and provided so that its position can be adjusted.

[0029] In one embodiment, the controller may include at least one of a distance controller that controls a separation distance of the segmented spaces and an area controller that is positioned between the segmented spaces and is rotatably provided.

[0030] In one embodiment, the length of each of the plurality of segments may be formed to be less than or equal to 1 / 4 of the wavelength of the electromagnetic wave forming the induced magnetic field, and the combined length of the plurality of segments may be formed to be greater than or equal to 1 / 4 of the wavelength of the electromagnetic wave.

[0031] On the other hand, another plasma generation unit of the present invention for achieving the above-mentioned technical task is provided in a substrate processing device, and may include a plasma generation unit for forming an induced magnetic field, a plurality of segments each of which is configured with a segment space formed between each of the plurality of segments; a plurality of expansion plates each of which is arranged spaced apart from each other and inserted into the segment space; and an insulating plate that is inserted between the expansion plates and rotates between the expansion plates.

[0032]

[0033] The present invention has the effect of preventing the generation of a standing wave even without limiting the total length of a plasma generating unit for generating an induced magnetic field when processing a substrate, thereby generating a uniform electromagnetic field in the entire plasma generating unit and controlling the uniformity of the electromagnetic field.

[0034] The effects of the present invention are not limited to the effects described above, and those skilled in the art will understand that other effects not mentioned can be derived from the configurations used in the specification and drawings below.

[0035]

[0036] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0037] FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment of the present invention.

[0038] Figure 2 is a partial perspective view of the plasma generation unit illustrated in Figure 1 as viewed from above.

[0039] Fig. 3 is an enlarged perspective view of the plasma generation unit illustrated in Fig. 2 positioned at the first position.

[0040] Fig. 4 is a perspective view of the distance control body illustrated in Fig. 3 moved to the second position.

[0041] Figure 5 is a perspective view of a single antenna according to a comparative example.

[0042] Fig. 6 is an equivalent circuit diagram of the single antenna shown in Fig. 5.

[0043] Figure 7 is a contour map of current intensity showing the current intensity distribution when power is supplied to the plasma generation unit illustrated in Figure 5.

[0044] Figure 8 is a contour map of an induced magnetic field showing the distribution of an induced magnetic field when power is supplied to the plasma generation unit illustrated in Figure 5.

[0045] Figure 9 is an equivalent circuit diagram of a plasma generation unit and a distance control body according to one embodiment of the present invention.

[0046] Figure 10 is a contour map of current intensity showing the current intensity distribution when power is supplied to the plasma generation unit illustrated in Figure 9.

[0047] Figure 11 is a contour map of an induced magnetic field showing the distribution of an induced magnetic field when power is supplied to the plasma generation unit illustrated in Figure 10.

[0048] FIG. 12 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a diagonal direction.

[0049] Fig. 13 is an enlarged perspective view of the area control body illustrated in Fig. 12.

[0050] Fig. 14 is a perspective view of the area control body illustrated in Fig. 13 rotated by a first angle.

[0051] Fig. 15 is a perspective view of the area control body illustrated in Fig. 13 rotated by a second angle.

[0052] Fig. 16 is a cross-sectional view showing the contact area between the second segment and the area control body shown in Fig. 14.

[0053] Fig. 17 is a cross-sectional view showing the contact area between the second segment shown in Fig. 16 and the area control body.

[0054] FIG. 18 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a slanted direction.

[0055] Fig. 19 is an enlarged perspective view of the insulating plate illustrated in Fig. 18.

[0056] Fig. 20 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a first angle.

[0057] Fig. 21 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a second angle.

[0058] Fig. 22 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a third angle.

[0059] FIG. 23 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a slanted direction.

[0060]

[0061] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope of the present disclosure to those skilled in the art. To provide a thorough understanding of the embodiments of the present disclosure, numerous specific details, such as examples of specific components, devices, and methods, are set forth. It will be apparent to those skilled in the art that specific details are not necessarily required, and that the exemplary embodiments can be implemented in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0062] The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular or non-plural forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are open-ended and thus specify the presence of stated features, elements, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as necessarily being performed in the particular order discussed or described, unless such order is explicitly stated. Additionally, additional or alternative steps may be selected.

[0063] When a component or layer is referred to as being "on," "connected," "bonded," "attached," "adjacent," or "covering" another component or layer, it is intended that it is directly on, connected, bonded, attached, adjacent, or covering said other component or layer, or that intermediate components or layers may be present. Conversely, when a component is referred to as being "directly on," "directly connected to," or "directly coupled to" another component or layer, it should be understood that no intermediate components or layers are present. Like reference numerals refer to like components throughout the specification. The term "and / or" as used herein includes all combinations and subcombinations of one or more of the listed items.

[0064] Although terms such as first, second, third, etc. may be used herein to describe various configurations, regions, layers, and / or sections, it should be understood that these configurations, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one configuration, region, layer, or section from another configuration, region, layer, or section. Thus, a first configuration, a first region, a first layer, or a first section discussed below could also be referred to as a second configuration, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

[0065] The terms "... part", "... unit", "... module", "... body", etc., described in the specification are considered to mean a unit that processes at least one function or operation when describing electronic hardware or electronic software, and at least one part, assembly of parts, function, use, point, or driving element when describing a mechanical device.

[0066] Spatially relative terms (e.g., "beneath," "beneath," "lower," "above," "top," etc.) may be used for convenience of description to describe the relationship of one component or feature to other components or features as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass not only the orientation depicted in the drawings, but also other orientations of the device in use or operation. For example, if the device in the drawings were turned over, components described as "beneath" or "below" other components or features would then be oriented "above" the other components or features. Thus, the term "beneath" can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at other orientations), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

[0067] When using the terms "same" or "same" in the description of embodiments, it should be understood that there may be some inaccuracy. Therefore, when one configuration or value is referred to as being the same as another configuration or value, it should be understood that the configuration or value is the same as the other configuration or value within a manufacturing or operating tolerance (e.g., 10%).

[0068] When the terms "approximately" or "substantially" are used herein in connection with a numerical value, it should be understood that the numerical value includes a manufacturing or operating tolerance (e.g., 10%) of the stated value. Furthermore, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it should be understood that geometrical accuracy is not required, but that latitude in the shape is within the scope of the disclosure.

[0069] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning within the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0070] In this embodiment, a wafer is used as an example of a processing target. However, the technical concept of the present invention can also be applied to devices used for processing other types of substrates other than wafers.

[0071]

[0072] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

[0073] Fig. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment of the present invention. Fig. 2 is a partial perspective view of the plasma generation unit illustrated in Fig. 1 as viewed from above in a diagonal direction. Fig. 3 is an enlarged perspective view of the plasma generation unit illustrated in Fig. 2 positioned at a first position. Fig. 4 is a perspective view of the distance adjusting body illustrated in Fig. 3 moved to a second position.

[0074] A substrate processing device according to one embodiment of the present invention may include a housing (10), a window unit (20), a support unit (30), a gas supply unit (40), a baffle (50), an exhaust unit (60), a power application unit (70), and a plasma generation unit (80).

[0075] The housing (10) may have a processing space (11) in which a substrate (W) is processed and an upper space (12). The processing space (11) and the upper space (12) are separated by a window unit (20) installed inside the housing (10). The housing (10) is provided with a metal material, and for example, the housing (10) may be provided with a material including aluminum. The housing (10) may be grounded.

[0076] The window unit (20) may be provided in a plate shape. The window unit (20) may seal the processing space (11). The window unit (20) may include a dielectric substance window. An opening may be formed in the window unit (20). For example, an opening may be formed in the center of the window unit (20). A gas supply nozzle (42) described below may be installed in the opening formed in the window unit (20). The gas supply nozzle installed in the window unit (20) may be provided in a detachable manner.

[0077] The support unit (30) supports the substrate (W) in the processing space (11). The support unit (30) may further include a chuck (31). In one example, the chuck (31) may be configured as a chuck or a heater chuck. When the chuck (31) is configured as an electrostatic chuck, it may generate static electricity by power applied from an external power source. At this time, the static electricity generated by the chuck (31) may fix the substrate (W) to the support unit (30). However, the configuration of the chuck (31) in the present invention is not limited to the above-described example, and it goes without saying that it may be implemented by being modified into various chuck shapes. Meanwhile, the support unit (30) may be connected to the housing (10) by a connecting member (32).

[0078] The gas supply unit (40) can supply process gas to the processing space (11). The process gas supplied to the processing space (11) by the gas supply unit (40) may include fluorine and / or hydrogen. However, the present invention is not limited thereto, and the type of process gas supplied to the processing space (11) by the gas supply unit (40) may be modified to include various known process gases.

[0079] The gas supply unit (40) may include a gas supply source (41) and a gas supply nozzle (42). The gas supply source (41) may store a process gas or supply the process gas to the gas supply nozzle (42). The gas supply nozzle (42) supplies the process gas to the processing space (11). The gas supply nozzle (42) may supply the process gas supplied from the gas supply source (41) to the processing space (11). The gas supply nozzle (42) may be installed in the window unit (20). For example, the gas supply nozzle (42) may be installed in an opening formed in the center of the window unit (20).

[0080] The baffle (50) uniformly exhausts plasma by region in the processing space (11). The baffle (50) has an annular ring shape when viewed from above. The baffle (50) may be positioned between the inner wall of the housing (10) and the chuck (31) within the processing space (11). In addition, a plurality of baffle holes (51) are formed in the baffle (50). The baffle holes (51) may be provided to face the vertical direction. The baffle holes (51) may be provided as holes extending from the top to the bottom of the baffle (50). The baffle holes (51) may be arranged to be spaced apart from each other along the circumferential direction of the baffle (50).

[0081] The exhaust unit (60) can exhaust process gases and impurities inside the processing space (11) to the outside. The exhaust unit (60) can exhaust impurities and particles generated during the process of processing the substrate (W) to the outside of the process chamber (500). The exhaust unit (60) can exhaust process gases supplied into the processing space (11) to the outside of the housing (10).

[0082] As an example of such an exhaust unit (60), the exhaust unit (60) may include an exhaust line (61) and a pressure reducing member (62). The exhaust line (61) may be connected to an exhaust hole (11) formed on the bottom surface of the housing (10). As an example, the exhaust line (61) may be connected to an exhaust hole (11) formed on the bottom surface of the housing (10). The exhaust line (61) may be connected to a pressure reducing member (62) that provides pressure reduction.

[0083] The pressure reducing member (62) can provide negative pressure to the processing space (11). The pressure reducing member (62) can discharge plasma, impurities, particles, etc. remaining in the processing space (11) to the outside of the housing (10). In addition, the pressure reducing member (62) can provide negative pressure to maintain the pressure of the processing space (11) at a preset pressure. The pressure reducing member (62) may be a pump. However, the present invention is not limited thereto, and the pressure reducing member (62) may be provided in various modified forms as a known device that provides negative pressure.

[0084] The power supply unit (70) may include a power source (71), a power line (72), a matching device (73), and a ground line (74).

[0085] The power source (71) generates power. The power source (71) may be a high-frequency power source. For example, the power source (71) may generate high-frequency power. The power source (71) may apply power to the plasma generation unit (80) through a power line (72) described below. The power source (71) may apply high-frequency current to the plasma generation unit (80) through the power line (72). The high-frequency current applied to the plasma generation unit (80) forms an induced magnetic field within the processing space (11), and the induced magnetic field energizes the process gas supplied into the processing space (11) to discharge plasma. At this time, the discharged plasma etches and ashes the film of the substrate (W).

[0086] The power line (72) can transmit high-frequency power generated by the power source (71) to one end of the plasma generation unit (80).

[0087] The matching device (73) can perform matching for the high-frequency power applied from the power source (71) to one end of the plasma generation unit (80). The matching device (73) is connected to the output terminal of the power source (71) and can match the output impedance and input impedance on the power source (71) side.

[0088] The ground line (74) can be connected to the other end of the plasma generation unit (80). The ground line (74) causes the current flowing from the power source (71) to the plasma generation unit (80) to flow toward the ground side.

[0089] The plasma generation unit (80) may be formed in a single loop shape spaced apart from the outer periphery of the substrate (W) at a certain distance inward when viewed from above. For example, the plasma generation unit (80) may be formed in a ring shape with some sections short-circuited. In addition, the plasma generation unit (80) may be formed in a form in which a circular rod or a square rod made of a conductive metal material forms a single loop as a ring-shaped segment, and a regulator is inserted into each of the segment spaces (80b). In addition, the plasma generation unit (80) has a separation space (80a) formed in some sections. In this case, one end of the plasma generation unit (80) in which the separation space (80a) is formed is electrically connected to a power line (71), and the other end of the plasma generation unit (80) in which the separation space (80a) is formed is electrically connected to a ground line (74). The plasma generation unit (80) forms an induced magnetic field inside the processing space (11) through high-frequency power input between the power line (71) and the ground line (74). At this time, the induced magnetic field energizes the process gas to form plasma.

[0090] As an example of such a plasma generation unit (80), the plasma generation unit (80) may include an antenna and a controller.

[0091] The antenna may include a first segment (81) and a second segment (82).

[0092] The first segment (81) may be formed in an arc shape. One end of the first segment (81) may be connected to a ground line (74), and the other end of the first segment (81) may be in close contact with a distance adjusting member (83).

[0093] The second segment (82) may be formed in an arc shape. One end of the second segment (82) may be in close contact with the distance adjusting member (83), and the other end of the second segment (82) may be electrically connected to the power line (72). In addition, the second segment (82) may be arranged symmetrically with the first segment (81) so as to form a circle together with the first segment (81). A segment space (80b) may be formed between the second segment (82) and the first segment (81). In this case, a distance adjusting member (83) may be inserted into the segment space (80b). In addition, a separation space (80a) as described above may be formed between the first segment (81) and the second segment (82). The separation space (80a) has a separation distance greater than that of the segment space (80b) so as not to act as a capacitor. In addition, the second segment (82) is electrically connected to the distance adjusting member (83) at one end adjacent to the first segment (81). In this case, an extension region (82a) is formed at one end of the second segment (82), and a stacking region (83a) of the distance adjusting member (83) is connected to the extension region (82a) in a stacked state. In this case, the area of ​​the cross-section of the extension region (82a) can be formed to be smaller than the cross-section of the second segment (82).

[0094] The regulator may include a distance regulator (83).

[0095] The distance adjusting member (83) is roughly formed in a rod shape. Such a distance adjusting member (83) may include a laminated region (83a) laminated on an extension region (82a) of a second segment (82), and a adjusting region (83b) formed by extending from the laminated region (83a) in a direction toward which one end of the first segment (81) is located. Here, a segment space (80b) is formed between the distance adjusting member (83) and the first segment (81).

[0096] In this case, the area of ​​the cross-section of the extension region (82a) of the second segment (82) and the area of ​​the cross-section of the laminated region (83a) are combined to be the same as the area of ​​the cross-section of the second segment (82), thereby preventing the uniformity of the induced magnetic field from changing.

[0097] In addition, the distance adjusting member (83) is provided so that its position can be moved between a first position and a second position, as illustrated in FIGS. 3 and 4. That is, the distance adjusting member (83) can be moved in the longitudinal direction so that its position can be adjusted. In this case, when the distance adjusting member (83) is viewed from above at each of the first position and the second position, the extension region and the laminated region can at least partially overlap each other, thereby preventing the uniformity of the induced magnetic field from changing.

[0098] In addition, the area where the extension region (82a) and the laminated region (83a) overlap at the first position and the area where the extension region (82a) and the laminated region (83a) overlap at the second position may be formed differently from each other.

[0099] In addition, the first segment (81), the second segment (82) and the distance adjusting body (83) are formed of a conductive metal material and are formed of the same material as each other, so that the uniformity of the induced magnetic field is not changed.

[0100] In addition, the segment space (80b) between the distance adjusting body (83) and the first segment body (81) functions as a parasitic capacitor. In this case, the distance adjusting body (83) adjusts the distance from the first segment body (81) while being electrically connected to the second segment body (82). Therefore, the distance adjusting body (83) adjusts the separation distance of the segment space (80b) to adjust the permittivity of the parasitic capacitor, thereby controlling the size of the induced magnetic field generated in the plasma generation unit (80). In the present embodiment, the distance adjusting body (83) is configured as one, but may be configured as multiple if necessary, and the coupling position of the distance adjusting body (83) may be configured at any position selected within the length range of the first segment body (81) and the second segment body (82).

[0101]

[0102] Below, the current intensity distribution and magnetic field distribution of the substrate processing device described above will be described in detail in comparison with a comparative example.

[0103] Fig. 5 is a perspective view of a single antenna according to a comparative example. Fig. 6 is an equivalent circuit diagram of the single antenna illustrated in Fig. 5. Fig. 7 is a contour map of current intensity showing the distribution of current intensity when power is supplied to the plasma generation unit illustrated in Fig. 5. Fig. 8 is a contour map of an induced magnetic field showing the distribution of an induced magnetic field when power is supplied to the plasma generation unit illustrated in Fig. 5.

[0104] As illustrated in Fig. 5, the single antenna (1a) according to the comparative example is in a state where the segmented space (80b) exemplified in the present embodiment is not formed, and the total length is in a state where it exceeds 1 / 4 of the electromagnetic wave wavelength. The single antenna (1a) according to the comparative example has an electromagnetic wave frequency of 60 MHz and an electromagnetic wave wavelength of 5 m, and 1 / 4 of the electromagnetic wave wavelength is formed as 1.25 m. In this case, the total length of the single antenna (1a) according to the comparative example is configured to be 1.5 m.

[0105] As illustrated in Fig. 6, a single antenna (1a) according to a comparative example is implemented with one inductance (L). When high-frequency power is supplied to the single antenna (1a) according to this comparative example, as illustrated in Fig. 7, the lowest current intensity is formed in some sections of the entire length region of the single antenna (1a), and a relatively high current intensity is formed in other sections.

[0106] Accordingly, as shown in Fig. 8, when examining the distribution of the induced magnetic field of the single antenna (1a) according to the comparative example, depending on the current intensity, an induced magnetic field with a relatively lower density is formed around some sections than other sections, and an induced magnetic field with a relatively higher density is formed around other sections than other sections. That is, the single antenna (1a) forms an induced magnetic field that is asymmetrical on both sides with respect to the midpoint of the entire length as the standard.

[0107] Therefore, when the substrate (W) is etched using a single antenna (1a) as in the comparative example, the substrate (W) is etched unevenly because uneven plasma is formed within the processing space (11).

[0108] Meanwhile, looking at the substrate processing device according to one embodiment of the present invention, FIG. 9 is an equivalent circuit diagram of a plasma generation unit and a distance controller according to one embodiment of the present invention. FIG. 10 is a contour diagram of current intensity showing the distribution of current intensity when power is supplied to the plasma generation unit shown in FIG. 9. FIG. 11 is a contour diagram of an induced magnetic field showing the distribution of an induced magnetic field when power is supplied to the plasma generation unit shown in FIG. 10.

[0109] First, looking at Fig. 9, an equivalent circuit in which a distance adjusting member (83) is inserted between a first segment (81) and a second segment (82) can be expressed as two inductances (L) for the first segment (81) and the second segment (82), and the segment space (80b) is composed of one capacitor (C), so that two inductances (L) and one capacitor (C) can be expressed in a LC resonance form connected in series.

[0110] In this case, the plasma generation unit (80) is in a state where the length of each of the first segment (81) and the second segment (82) forming the inductance does not exceed 1 / 4 of the electromagnetic wave wavelength, and the total length of the first segment (81) and the second segment (82) exceeds 1 / 4 of the electromagnetic wave wavelength. For example, if the frequency of the electromagnetic wave is 60 MHz and the electromagnetic wave wavelength is 5 m, 1 / 4 of the electromagnetic wave wavelength can be formed as 1.25 m. In this case, the total length of the plasma generation unit (80) can be configured as 1.43 m, and the length of each of the first segment (81) and the second segment (82) can be configured as approximately 0.7 m.

[0111] In this state, when the power supply unit (70) supplies power to the plasma generation unit (80), the plasma generation unit (80) generates an induced magnetic field within the processing space (11). At this time, the current flowing in the plasma generation unit (80) flows uniformly throughout the entire section, as illustrated in FIG. 10.

[0112] In this case, when looking at the distribution of the induced magnetic field formed around the plasma generation unit (80), a symmetrical distribution is formed based on the segment space (80b) formed at the midpoint of the entire length, as shown in Fig. 11.

[0113] Accordingly, since the substrate processing device according to one embodiment of the present invention generates an induced magnetic field symmetrically even when the total length of the plasma generating unit (80) exceeds 1 / 4 of the electromagnetic wave wavelength, the entire area of ​​the substrate can be uniformly etched, unlike the form in which a specific area of ​​the substrate (W) is intensively etched as in the comparative example described above.

[0114] In addition, the substrate processing device according to one embodiment of the present invention is configured such that the distance adjusting body (83) is movable in the longitudinal direction while being electrically connected to the second segment (82). At this time, since the distance adjusting body (83) is configured such that it is movable in the direction in which the first segment (81) is located, the size of the induced magnetic field generated in the first segment (81) and the second segment (82) can be adjusted by adjusting the separation distance of the segment space (80b).

[0115] In this way, since the substrate processing device according to one embodiment of the present invention can vary the storage capacity of the segmented space (80b) to a size required by the specifications, the storage capacity can be controlled when designing the plasma generation unit (80), thereby adjusting the plasma uniformity to meet the design specifications.

[0116] Therefore, the substrate processing device according to one embodiment of the present invention can adjust the size of the induced magnetic field according to the size of the substrate (W), and thus can adjust the etching rate according to the size of the substrate (W).

[0117]

[0118] Fig. 12 is a perspective view of a plasma generation unit of a substrate processing apparatus according to another embodiment of the present invention, viewed from a diagonal direction. Fig. 13 is an enlarged perspective view of the area control body illustrated in Fig. 12. Fig. 14 is a perspective view of the area control body illustrated in Fig. 13 rotated by a first angle. Fig. 15 is a perspective view of the area control body illustrated in Fig. 13 rotated by a second angle. Fig. 16 is a cross-sectional view illustrating a contact area between the second segmented body and the area control body illustrated in Fig. 14. Fig. 17 is a cross-sectional view illustrating a contact area between the second segmented body and the area control body illustrated in Fig. 16.

[0119] A plasma generation unit (90) as shown in FIGS. 12 to 17 may include an antenna and a regulator.

[0120] The antenna may include a first segment (91) and a second segment (92).

[0121] The first segment (91) and the second segment (92) are each formed in an arc shape and can be arranged symmetrically with respect to each other to form a circular shape similar to the embodiment described above.

[0122] The regulator may include an area regulator (93).

[0123] The area adjusting body (93) is roughly formed in a rod shape. The area adjusting body (93) is arranged between the first segment (91) and the second segment (92). In this case, the area adjusting body (93) is spaced apart from the first segment (91) to form a segment space (90a). Here, the area adjusting body (93) is electrically connected to the second segment (92). If necessary, the area adjusting body (93) may also be spaced apart from the second segment (92) to form a segment space (90a). In this case, the area adjusting body (93) may be fixed in a state in which the rotation angle is adjusted by a fastening member (not shown). In the present embodiment, the area adjusting body (93) is configured as one, but may be configured as a plurality of pieces if necessary, and the coupling position may be configured at any position selected within the length range of the first segment (91) and the second segment (92). In this case, the first segment (91), the second segment (92) and the area adjusting body (93) are formed of a conductive metal material, and are formed of the same material as each other, so that the uniformity of the induced magnetic field is not changed.

[0124] In addition, the area adjusting body (93) may be provided so that its position can be rotated, unlike the distance adjusting body (83) that moves in the longitudinal direction. In this case, the areas where one side of the first segment (91) connected to the segment space (90a) and the one side of the area adjusting body (93) connected to the segment space (90a) face each other are provided differently according to the rotation angle of the area adjusting body (93), thereby adjusting the capacitance of the segment space (90a), which is a parasitic capacitor. For example, as illustrated in FIGS. 14 and 16, the area adjusting body (93) may be rotated at a first angle so that the area where the first segment (91) and the area adjusting body (93) face each other is adjusted to a first area (90b). In addition, as illustrated in FIGS. 15 and 17, the area adjusting body (93) can be rotated at a second angle to adjust the area where the first segment (91) and the area adjusting body (93) face each other to a second area (90c). In this case, the area adjusting body (93) can adjust the capacitance of the parasitic capacitor to be less than the first area (90b) by adjusting the area where the first segment (91) and the area adjusting body (93) face each other to a second area (90c). In this way, the area adjusting body (93) can adjust the size of the induced magnetic field generated in the first segment (91) and the second segment (92) depending on the position of the rotation angle. Meanwhile, the area adjusting body (93) can be coupled to the second segment (92) by a fastening member or bonding member (not illustrated).

[0125] In this way, since the substrate processing device according to another embodiment of the present invention can vary the storage capacity of the segmented space (90b) to a size required by the specifications, the storage capacity can be controlled when designing the plasma generation unit (90), thereby adjusting the plasma uniformity to meet the design specifications.

[0126] Therefore, the substrate processing device according to one embodiment of the present invention can adjust the size of the induced magnetic field according to the size of the substrate (W), and thus can adjust the etching rate according to the size of the substrate (W).

[0127] Furthermore, since the plasma generation unit (90) of the substrate processing device according to another embodiment of the present invention generates an induced magnetic field symmetrically even when the total length exceeds 1 / 4 of the electromagnetic wave wavelength, unlike the form in which a specific area of ​​the substrate (W) is intensively etched as in the comparative example described above, the entire area of ​​the substrate can be uniformly etched.

[0128]

[0129] Fig. 18 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a diagonal direction. Fig. 19 is an enlarged perspective view of the insulating plate illustrated in Fig. 18. Fig. 20 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a first angle. Fig. 21 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a second angle. Fig. 22 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a third angle.

[0130] As illustrated in FIG. 18 and FIG. 22, a plasma generation unit (100) of a substrate processing device according to another embodiment of the present invention may include an antenna and an extension plate (103).

[0131] The antenna may include a first segment (101) and a second segment (102).

[0132] Each of the first segment (101) and the second segment (102) is formed in an arc shape and is arranged in combination with each other to form a circle. A segment space is formed between the first segment (101) and the second segment (102). The first segment (101) and the second segment (102) can be formed in a shape similar to the first and second segments of the above-described embodiments.

[0133] The expansion plate (103) is formed in a plate shape. In addition, the expansion plate (103) is composed of a plurality of pieces. The plurality of expansion plates (103) are arranged at a predetermined interval while being horizontal to each other. Such expansion plates (103) are electrically connected to each of the first segment (101) and the second segment (102) while being arranged between the segment spaces of the first segment (101) and the second segment (102), thereby forming a parasitic capacitor between the expansion plates (103). At this time, since the plurality of expansion plates (103) form a parasitic capacitor at each interval, the accumulation capacity of the parasitic capacitor can be adjusted depending on the number of expansion plates configured. Accordingly, since the substrate processing device according to another embodiment of the present invention can vary the storage capacity to a size required for the specifications by adjusting the number of expansion plates (103), the storage capacity can be controlled when designing the plasma generation unit (90), thereby adjusting the plasma uniformity to meet the design specifications.

[0134] In addition, the plasma generation unit (100) of the substrate processing device according to another embodiment of the present invention may be formed by further including an insulating plate (104).

[0135] The insulating plate (104) may include an insulating plate (104a) and a rotation pin (104b).

[0136] The insulating plate (104a) is formed in a plate shape. In addition, the insulating plates (104a) may be configured in multiple pieces and arranged horizontally and spaced apart from each other by a predetermined interval. The insulating plate (104a) may be formed of an insulating material. The insulating plate (104) provides insulation between the expansion plates (103), thereby controlling the insulation rate between the expansion plates (130).

[0137] The pivot pin (104b) is coupled to each of the plurality of insulating plates (104a), so that when the insulating plates (104a) rotate, the plurality of insulating plates (104a) are rotated simultaneously. Therefore, the insulating plates (104a) are coupled by the pivot pin (104b), so that when they rotate, each of the expansion plates (103) is insulated at a constant ratio, so that the capacitance of the parasitic capacitor can be uniformly adjusted according to the rotation angle. In this case, the pivot pin (104b) can be formed so that the shaft end is coupled to one corner or one side of the insulating plate (104a), so that the insulation area varies according to the rotation angle of the insulating plate (104a).

[0138] Meanwhile, the insulating plate (104) can adjust the storage capacity of the expansion plate (103) according to the rotation angle.

[0139] For example, as shown in Fig. 20, when the insulating plate (104) is rotated at a first angle, the insulating area of ​​the expansion plate (103) can be formed as the first area, thereby setting the capacitance of the expansion plates (103) to the first capacitance.

[0140] In addition, as shown in Fig. 21, when the insulating plate (104) is rotated at a second angle, the insulating area of ​​the expansion plate (103) can be formed as a second area, thereby setting the capacitance of the expansion plates (103) to the second capacitance.

[0141] In addition, as illustrated in Fig. 22, when the insulating plate (104) is rotated at a third angle, the insulating area of ​​the expansion plate (103) is formed as a third area, thereby setting the capacitance of the expansion plates (103) to a third capacitance. Since the third area is a form in which the insulating plate (104) insulates between the expansion plates (103), the insulation rate is formed to be 0.

[0142] Here, the third capacitor capacity is formed to be larger than the second capacitor capacity because the insulation area of ​​the insulating plate (104) is formed to be close to 0, and the first capacitor capacity is formed to be smaller than the second capacitor capacity because the insulation area of ​​the insulating plate (104) is formed to be the largest.

[0143] In this way, since the substrate processing device according to another embodiment of the present invention can vary the capacitance of the dielectric to a size required by the specifications, the plasma uniformity can be adjusted to meet the design specifications by controlling the capacitance when designing the plasma generation unit.

[0144] Meanwhile, in the present embodiment, the extension plate (103) and the insulating plate (104) are configured as one, but may be configured as multiple pieces as needed, and the joining position may be configured at any position selected within the length range of the first segment (101) and the second segment (102).

[0145]

[0146] FIG. 23 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a slanted direction.

[0147] As illustrated in FIG. 23, the plasma generation unit (110) of the substrate processing device according to another embodiment of the present invention may be configured such that the plasma generation units (100) illustrated in FIG. 18 are configured in multiple pieces and are connected in parallel to each other, and the segments constituting the antenna are arranged on the same plane so as not to overlap each other.

[0148] In this way, the plasma generation unit (110) of the substrate processing device according to another embodiment of the present invention can be configured in a parallel form according to the required specifications in a state where a standing wave is not formed as described above, and the shape of the induced magnetic field can be adjusted in various forms.

[0149] As seen in these examples, the aforementioned plasma generating units (80, 90) may be configured in multiples and arranged in parallel with each other, but the segments constituting the antenna may be arranged so as not to overlap each other on the same plane. When the plasma generating units are configured in this way to be connected in parallel with each other, the current flowing through the antenna can be increased, thereby forming a high plasma density.

[0150] That is, it should be understood that exemplary embodiments are disclosed herein, and that other variations are possible. Individual components or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be interchangeable and used in a selected embodiment, even if not specifically illustrated or described. Such variations should not be considered a departure from the spirit and scope of the present disclosure, and all such variations apparent to those skilled in the art are intended to be included within the scope of the following claims.

Claims

1. In a device for processing a substrate, A housing having a processing space; A support unit disposed inside the above processing space and supporting the substrate; A gas supply unit for supplying process gas into the above processing space; and A plasma generating unit that forms an induction magnetic field within the processing space to excite the process gas into a plasma state; The above plasma generating unit, An antenna having a plurality of segments arranged in series with each other, and a segment space formed between adjacent segments; and A substrate processing device, comprising: a controller inserted into the above segmented space and provided with a position that is adjustable; 2. In paragraph 1, A substrate processing device, wherein the control body comprises a distance control body that controls the separation distance of the segmented space.

3. In paragraph 2, Among the segments, one of the segments connected to the segment space further includes an extension region extending in the direction in which the segment space is formed; The above extension region is formed with an area smaller than the cross-section of the segment, The distance control body further includes a laminated region extending in the direction in which the extension region is formed; A substrate processing device in which the above-mentioned laminated region is laminated to the above-mentioned extended region.

4. In paragraph 3, A substrate processing device, wherein the area of ​​the cross-section of the above-mentioned extended region and the area of ​​the cross-section of the above-mentioned laminated region are combined to be the same as the area of ​​the cross-section of the above-mentioned divided body.

5. In paragraph 3, The above distance controller is movable between a first position and a second position, A substrate processing device, wherein when each of the first position and the second position is viewed from above, the extension region and the laminated region overlap each other at least partially.

6. In paragraph 5, A substrate processing device, wherein the area where the extension region and the laminated region overlap at the first position and the area where the extension region and the laminated region overlap at the second position are formed differently from each other.

7. In paragraph 2, The above-mentioned segment and the above-mentioned distance adjusting body are formed of a conductive metal material, A substrate processing device, wherein the above-mentioned segment and the distance adjusting body are formed of the same material.

8. In paragraph 1, A substrate processing device, comprising: an area adjusting body disposed between the segmented spaces and rotatably provided; 9. In paragraph 8, A substrate processing device in which one side of a segmented body connected to the segmented space and one side of the area adjusting body connected to the segmented space have different facing areas depending on the rotation angle of the area adjusting body.

10. In paragraph 9, A substrate processing device in which the storage capacity of the segmented space varies depending on the rotation angle of the area control body.

11. In paragraph 8, The above-mentioned segment and the above-mentioned area control body are formed of a conductive metal material, A substrate processing device, wherein the above-mentioned dividing body and the above-mentioned area adjusting body are formed of the same material.

12. In paragraph 1, The length of each of the plurality of segments is formed to be less than 1 / 4 of the wavelength of the electromagnetic wave forming the induced magnetic field, A substrate processing device, wherein the combined length of the plurality of segments is formed to be at least 1 / 4 of the wavelength of the electromagnetic wave.

13. In a device for processing a substrate, A housing having a processing space; A support unit disposed inside the above processing space and supporting the substrate; A gas supply unit for supplying process gas into the above processing space; and A plasma generating unit that forms an induction magnetic field within the processing space to excite the process gas into a plasma state; The above plasma generating unit, A segmented body composed of a plurality of pieces, each of which has a segmental space formed between them; and A substrate processing device comprising: an extension plate, which is composed of a plurality of plates and is spaced apart from each other and inserted into the segmented space; 14. In paragraph 13, The above plasma generating unit, A substrate processing device further comprising an insulating plate inserted between the expansion plates and rotating between the expansion plates.

15. In paragraph 14, A substrate processing device in which the insulating plate adjusts the insulating area between the expansion plates according to the rotation angle, thereby adjusting the storage capacity of the expansion plates.

16. In paragraph 13, The length of each of the plurality of segments is formed to be less than 1 / 4 of the wavelength of the electromagnetic wave forming the induced magnetic field, A substrate processing device, wherein the combined length of the plurality of segments is formed to be at least 1 / 4 of the wavelength of the electromagnetic wave.

17. In a plasma generation unit provided in a substrate processing device and forming an induced magnetic field, An antenna having a plurality of segments arranged in series with each other, and a segment space formed between adjacent segments; and A plasma generation unit, comprising a regulator inserted into the above segmented space and having its position adjustable.

18. In paragraph 17, The above regulator is, A plasma generation unit comprising at least one of a distance adjusting body for adjusting the separation distance of the segmented space and an area adjusting body that is arranged between the segmented spaces and is rotatably provided.

19. In paragraph 17, The length of each of the plurality of segments is formed to be less than 1 / 4 of the wavelength of the electromagnetic wave forming the induced magnetic field, A substrate processing device, wherein the combined length of the plurality of segments is formed to be at least 1 / 4 of the wavelength of the electromagnetic wave.

20. In a plasma generation unit provided in a substrate processing device and forming an induced magnetic field, A segmented body composed of a plurality of pieces, with a segmental space formed between each of the pieces; An extension plate composed of a plurality of pieces, spaced apart from each other and inserted into the segmented space; and A plasma generation unit, comprising an insulating plate inserted between the expansion plates and rotating between the expansion plates.

Images