Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device. The substrate processing device comprises: a pedestal which supports a substrate and which has a flow path through which a fluid for adjusting the temperature of the substrate flows; and a chiller unit for supplying the fluid to the flow path, wherein the chiller unit comprises: a first fluid supply source for supplying a first fluid of a first temperature; a second fluid supply source for supplying a second fluid of a second temperature, which is different from the first temperature; and a mixing valve which is provided downstream of the first fluid supply source and the second fluid supply source and is provided upstream of the flow path, and which adjusts the mixing ratio of the first fluid and the second fluid of a mixed fluid, the mixed fluid being a fluid in which the first fluid and the second fluid are mixed.

Description

Substrate processing device and substrate processing method

[0001] The present invention relates to a substrate processing device and a substrate processing method.

[0002] Semiconductor devices are manufactured by continuously and repeatedly performing various unit processes such as deposition process, photo process, cleaning process, etching process, strip process, and ion implantation process on a substrate such as a wafer.

[0003] Among these, the cleaning, stripping, and etching processes are processes that remove byproducts attached to the wafer or thin films formed on the wafer. Plasma can be used in the cleaning, stripping, and etching processes. Ions and / or radicals contained in the plasma are supplied to the wafer, and these ions and / or radicals react with the byproducts or films on the wafer, thereby removing the byproducts and thin films from the wafer.

[0004] A plasma device that processes wafers using plasma, as described above, comprises a process chamber and a pedestal that supports the wafer within the process chamber. Typically, plasma is concentrated in the central region of the process chamber. However, in some cases, the process chamber may exhibit structural asymmetry. For this reason, plasma-based wafer processing within the process chamber may vary across different regions of the wafer. For example, the plasma treatment rate may be high in the central region of the wafer, while the plasma treatment rate may be low in the edge region.

[0005] The pedestal supporting the wafer regulates the temperature of the supported wafer to ensure uniform plasma processing. To compensate for the difference in plasma processing rates between the central and edge regions of the wafer, the temperature of each pedestal region can be controlled differently.

[0006] For example, the pedestal includes an edge channel corresponding to an edge region of the wafer and a center channel corresponding to a central region of the wafer, and the temperature of the coolant flowing in the edge channel and the temperature of the coolant flowing in the center channel can be different from each other to control the temperature of each region of the wafer differently.

[0007] Typically, coolant is supplied to the center and edge channels via a chiller unit. The chiller unit supplies coolant at different temperatures to each channel. The chiller unit and the channels formed on the pedestal are connected via a coolant supply line.

[0008] However, the temperatures supplied to the center and edge channels must be adjusted during the process as needed. For example, the temperature of the coolant flowing through the center channel may need to be increased during the process. In this case, the chiller unit supplies high-temperature coolant to the center channel. However, even if the coolant temperature is adjusted in the chiller unit, the coolant temperature may change while the coolant flows through the center channel from the chiller unit. Even if the temperature of the main coolant does not change, it takes time for the change in coolant temperature to be reflected in the center channel.

[0009] You can also consider locating the chiller unit close to the pedestal, but considering the volume of the chiller unit, there is a limit to locating the chiller unit close to the pedestal.

[0010] Additionally, a plasma device may, in some cases, be equipped with multiple process chambers. Each of the multiple process chambers is provided with at least one pedestal. In this case, a corresponding number of chiller units are required for each pedestal to independently control the temperature of each pedestal.

[0011] The purpose of the present invention is to provide a substrate processing device and a substrate processing method capable of effectively processing a substrate.

[0012] In addition, the present invention aims to provide a substrate processing device and a substrate processing method that can shorten the time required for temperature control of a substrate.

[0013] In addition, the present invention aims to provide a substrate processing device and a substrate processing method capable of reducing the generation of particles in a line supplying fluid to a pedestal supporting a substrate.

[0014] In addition, the present invention aims to provide a substrate processing device and a substrate processing method that enable independent temperature control of a plurality of pedestals with a single chiller unit.

[0015] The problems to be solved by the present invention are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention pertains from this specification and the attached drawings.

[0016] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a pedestal that supports a substrate and has a flow path formed therein through which a fluid for controlling a temperature of the substrate flows; and a chiller unit that supplies the fluid to the flow path, wherein the chiller unit may include a first fluid supply source that supplies a first fluid at a first temperature; a second fluid supply source that supplies a second fluid at a second temperature different from the first temperature; and a mixing valve that is installed downstream of the first fluid supply source and the second fluid supply source and upstream of the flow path, and that adjusts a mixing ratio of the first fluid and the second fluid in a mixed fluid, the mixed fluid being a fluid in which the first fluid and the second fluid are mixed.

[0017] In one embodiment, the plurality of euros may be provided, and the plurality of euros may include a first euro corresponding to a first region of the substrate supported on the pedestal; and a second euro corresponding to a second region of the substrate supported on the pedestal that is different from the first region.

[0018] According to one embodiment, the first flow path may be formed at a position corresponding to an edge region of the substrate supported on the pedestal, and the second flow path may be formed at a position corresponding to a central region of the substrate supported on the pedestal.

[0019] According to one embodiment, the mixing valve is provided in plurality, and the plurality of mixing valves may include a first mixing valve for adjusting the mixing ratio of the first fluid and the second fluid of the first mixed fluid supplied to the first flow path; and a second mixing valve for adjusting the mixing ratio of the first fluid and the second fluid of the second mixed fluid supplied to the second flow path.

[0020] In one embodiment, the system may include a first mixing supply line positioned between the first mixing valve and the first flow path; and a second mixing supply line positioned between the second mixing valve and the second flow path.

[0021] According to one embodiment, temperature sensors for measuring the temperatures of the first mixed fluid and the second mixed fluid may be installed in the first mixed supply line and the second mixed supply line, respectively.

[0022] In one embodiment, the chiller unit includes a first fluid supply line for supplying the first fluid from the first fluid supply source to the flow path, the first fluid supply line including: a first main supply line connected to the first fluid supply source; and a plurality of first branch supply lines branching from the first main supply line, wherein the first branch supply lines can be configured to supply the first fluid to the first mixed supply line and the second mixed supply line, respectively.

[0023] According to one embodiment, the chiller unit includes a first fluid return line for returning fluid supplied to the flow path, the first fluid return line including: a first main return line connected to the first fluid supply source or the second fluid supply source; and a plurality of first branch return lines branching from the first main return line, the first branch return lines being respectively connected to the first flow path and the second flow path so as to return fluid flowing in the first flow path and the second flow path to the first fluid supply source or the second fluid supply source.

[0024] In one embodiment, the mixing valve may be installed at a position within a range of 20 to 40 cm from the pedestal.

[0025] According to one embodiment, the device may include a first fluid supply line connecting the first fluid supply source and the mixing valve; a second fluid supply line connecting the second fluid supply source and the mixing valve; a first bypass line connected to the first fluid supply line upstream of the mixing valve; and a second bypass line connected to the second fluid supply line upstream of the mixing valve.

[0026] In one embodiment, the device further comprises a control unit, wherein the control unit can control the chiller unit to open a bypass valve installed in the first bypass line or the second bypass line when adjusting the opening rate of the mixing valve.

[0027] In one embodiment, the control unit can control the chiller unit to open the bypass valve when the opening rate of the mixing valve is adjusted to a small degree.

[0028] In one embodiment, the control unit can control the chiller unit to open the bypass valve when adjusting the opening rate of the mixing valve, or before a set time for adjusting the opening rate of the mixing valve.

[0029] In addition, the present invention provides a substrate processing device. The substrate processing device includes a first processing unit for processing a substrate using plasma; a second processing unit arranged parallel to the first processing unit for processing the substrate using plasma; and a chiller unit for supplying a fluid for controlling the temperature of the substrate to the first processing unit and the second processing unit, wherein the first processing unit and the second processing unit each include a first pedestal and second pedestals, each of which supports a substrate and has a flow path formed therein through which a fluid for controlling the temperature of the substrate flows, and the chiller unit is configured to supply the fluid to the first pedestal and the second pedestal, wherein the first fluid supply source supplies a first fluid at a first temperature; a second fluid supply source supplies a second fluid at a second temperature different from the first temperature; And it may include a mixing valve installed downstream of the first fluid supply source and the second fluid supply source, installed upstream of the first pedestal and the second pedestal, and adjusting the mixing ratio of the first fluid and the second fluid of the mixed fluid supplied to the first pedestal or the second pedestal, wherein the mixed fluid is a fluid in which the first fluid and the second fluid are mixed, to control the temperature of the mixed fluid.

[0030] In one embodiment, the chiller unit may include a mixing supply line provided between the mixing valve and the first pedestal or between the mixing valve and the second pedestal, through which the mixed fluid flows.

[0031] According to one embodiment, the chiller unit further includes a temperature sensor for measuring the temperature of the mixed fluid flowing in the mixed supply line, and the device further includes a control unit for controlling the chiller unit, wherein the control unit can control the chiller unit to change the opening rate of the mixing valve when the temperature value of the mixed fluid measured by the temperature sensor is different from a preset temperature value.

[0032] In one embodiment, the chiller unit includes a first fluid supply line for supplying the first fluid from the first fluid supply source to the first pedestal or the second pedestal; a second fluid supply line for supplying the second fluid from the second fluid supply source to the first pedestal or the second pedestal; a first bypass line connected to the first fluid supply line and having a first bypass valve installed; and a second bypass line connected to the second fluid supply line and having a second bypass valve installed, wherein the control unit can control the chiller unit to open the first bypass valve or the second bypass valve when the opening rate of the mixing valve is changed.

[0033] In one embodiment, the set temperature value may be set based on pre-measured substrate processing data.

[0034] In addition, the present invention provides a substrate processing method. The substrate processing method supports the substrate on a pedestal having a first flow path and a second flow path formed at a different location from the first flow path, and supplies fluid to the first flow path and the second flow path to control the temperature of each region of the substrate, wherein the temperature of the fluid supplied to the first flow path and the second flow path can be controlled by mixing a first fluid at a first temperature and a second fluid at a second temperature different from the first temperature.

[0035] According to one embodiment, the mixing ratio of the first fluid and the second fluid is controlled using a mixing valve, wherein the mixing valve includes a first flow rate control unit that controls the supply flow rate of the first fluid per unit time and a second flow rate control unit that controls the supply flow rate of the second fluid per unit time, and the mixing ratio of the first fluid and the second fluid can be adjusted according to the adjustment of the opening rates of the first flow rate control unit and the second flow rate control unit.

[0036] According to one embodiment of the present invention, a substrate can be effectively treated.

[0037] Additionally, according to one embodiment of the present invention, the time required for temperature control of the substrate can be shortened.

[0038] In addition, according to one embodiment of the present invention, it is possible to reduce the generation of particles in a line supplying fluid to a pedestal supporting a substrate.

[0039] Additionally, according to one embodiment of the present invention, independent temperature control of multiple pedestals is possible with one chiller unit.

[0040] The effects of the present invention are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0041] FIG. 1 is a drawing showing a substrate processing device according to one embodiment of the present invention.

[0042] FIG. 2 is a flow chart showing a control method of a substrate processing device according to one embodiment of the present invention.

[0043] Figure 3 is a graph showing a first embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve.

[0044] Fig. 4 is a graph showing a second embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve.

[0045] Fig. 5 is a graph showing a third embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve.

[0046] Fig. 6 is a graph showing a fourth embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve.

[0047] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0048] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope of the present disclosure to those skilled in the art. To provide a thorough understanding of the embodiments of the present disclosure, numerous specific details, such as examples of specific components, devices, and methods, are set forth. It will be apparent to those skilled in the art that specific details are not necessarily required, and that the exemplary embodiments can be implemented in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0049] The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular or non-plural forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are open-ended and thus specify the presence of stated features, elements, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as necessarily being performed in the particular order discussed or described, unless such order is explicitly stated. Additionally, additional or alternative steps may be selected.

[0050] When an element or layer is referred to as being "on," "connected," "joined," "attached," "adjacent," or "covering" another element or layer, it is intended that it is directly on, connected, joined, attached, adjacent, or covering said other element or layer, or that intermediate elements or layers may be present. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, it should be understood that no intermediate elements or layers are present. Like reference numerals refer to like elements throughout the specification. The term "and / or" as used herein includes all combinations and subcombinations of one or more of the listed items.

[0051] Although terms such as first, second, third, etc. may be used herein to describe various elements, regions, layers, and / or sections, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Thus, a first element, a first region, a first layer, or a first section discussed below could also be referred to as a second element, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

[0052] Spatially relative terms (e.g., "beneath," "beneath," "lower," "above," "top," etc.) may be used for convenience of description to describe the relationship of one element or feature to other element(s) or features as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass not only the orientation depicted in the drawings, but also other orientations of the device in use or operation. For example, if the device in the drawings were turned over, elements described as "beneath" or "below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "beneath" can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at other orientations), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

[0053] When using the terms "same" or "same" in the description of embodiments, it should be understood that there may be some inaccuracy. Therefore, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0054] When the terms "approximately" or "substantially" are used herein in connection with a numerical value, it should be understood that the numerical value includes manufacturing or operating tolerances (e.g., ±10%) of the stated value. Furthermore, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it should be understood that geometrical accuracy is not required, but that latitude in the shape is within the disclosed scope.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning within the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0056] In the following, the substrate to be processed is described as a wafer as an example.

[0057] In addition, below, a substrate processing device is described as an example of processing a substrate using plasma.

[0058] In addition, the process of treating a substrate using plasma is described below as an example of a dry cleaning process for removing byproducts attached to the substrate, a dry etching process for removing a thin film formed on the substrate, or a dry strip process.

[0059] FIG. 1 is a drawing showing a substrate processing device according to one embodiment of the present invention.

[0060] Referring to FIG. 1, the substrate processing device (10) may include a first processing unit (100), a second processing unit (200), a chiller unit (300), and a control unit (400).

[0061] The processing units (100, 200) can process a substrate (W). The first processing unit (100) and the second processing unit (200) can be arranged side by side. The first processing unit (100) and the second processing unit (200) can perform the same type of substrate processing process. For example, the first processing unit (100) can perform a dry cleaning process and a dry etching process, and the second processing unit (200) can also perform a dry cleaning process and a dry etching process. Alternatively, the first processing unit (100) can perform a dry cleaning process and a dry etching process, and the second processing unit (200) can perform a deposition process.

[0062] The first processing unit (100) may include a first processing chamber (110), a first pedestal (120), a first diffusion chamber (130), a first reaction chamber (140), a first plasma source (150), a first gas supply line (160), a first baffle (170), and a first exhaust line (180).

[0063] The first processing chamber (110) can define a processing space (112) in which a substrate (W) is processed. The first processing chamber (110) can have a tubular shape with an open top. The inner wall of the first processing chamber (110) can be coated with a material having excellent corrosion resistance against plasma, such as YF3 or Y2O3.

[0064] The first pedestal (120) can support the substrate (W) in the processing space (112). The first pedestal (120) can have a support surface that supports the substrate (W). The first pedestal (120) can control the temperature of the substrate (W). The temperature of each region of the first pedestal (120) can be independently controlled. Accordingly, the first pedestal (120) can control the temperature of each region of the substrate (W).

[0065] A first pedestal (120) may have flow paths (121, 122) formed thereon. The flow paths formed in the first pedestal (120) may include a first-first flow path (121) and a first-second flow path (122). The first-first flow path (121) may correspond to an edge region of a substrate (W) placed on the first pedestal (120). When the first pedestal (120) is viewed in a downward direction from above, the first-first flow path (121) may overlap with an edge region of the substrate (W). The first-second flow path (122) may correspond to a central region of the substrate (W) placed on the first pedestal (120). When the first pedestal (120) is viewed in a downward direction from above, the first-second flow path (122) may overlap with a central region of the substrate (W).

[0066] When the first pedestal (120) is viewed from above in a downward direction, the first-first flow path (121) may be formed in the first pedestal (120) to have a larger radius than the first-second flow path (122). One end of the first-first flow path (121) may be a fluid inlet connected to a mixing supply line (370) described later. The other end of the first-first flow path (121) may be a fluid discharge connected to a first fluid return line (340) described later. Similarly, one end of the first-second flow path (122) may be a fluid inlet, and the other end of the first-second flow path (122) may be a fluid discharge.

[0067] In addition, a first heat blocking member (123) may be provided inside the first pedestal (120). The first heat blocking member (123) may be a ring plate having a generally ring shape. The first heat blocking member (123) may be provided with a material having low thermal conductivity. The first heat blocking member (123) may be arranged between the first-first flow path (121) and the first-second flow path (122), thereby blocking heat transfer between the first-first flow path (121) and the first-second flow path (122).

[0068] The first diffusion chamber (130) may be arranged above the first processing chamber (110). The first diffusion chamber (130) may provide a first diffusion space (132). The first diffusion chamber (130) may be arranged below the first reaction chamber (140) described below. The first diffusion chamber (130) may diffuse plasma generated in the first reaction chamber (140) described below. The first diffusion space (132) provided by the first diffusion chamber (130) may have a lower portion having a larger diameter than the upper portion. The plasma generated in the first reaction chamber (140) is diffused while passing through the first diffusion space (132), and the diffused plasma may be uniformly transferred to the substrate (W).

[0069] The first reaction chamber (140) may be positioned above the first diffusion chamber (130). The first reaction chamber (140) may provide a first reaction space (142). In the first reaction space (142), a process gas supplied by a first gas supply line (160) described later may be excited into a plasma state by a first plasma source (150) described later.

[0070] The first processing space (112), the first diffusion space (132), and the first reaction space (142) described above can be fluidly connected.

[0071] The first plasma source (150) may include a first coil (151) and a first power source (152). The first coil (151) may be configured to surround the first reaction chamber (140). The first power source (152) may be a high-frequency power source. The first power source (152) may be an RF power source that applies RF (Radio Frequency) power to the first coil (151). The first power source (152) may be a source RF (Source RF) that excites a process gas supplied to the first reaction chamber (140) by the first gas supply line (160) described below into a plasma state. The first power source (152) applies high-frequency power to the first coil (151), and the first coil (151) may form a high-frequency electric field in the first reaction space (142). The high-frequency electric field may excite the process gas into a plasma state.

[0072] The first gas supply line (160) can supply a process gas to the first reaction space (142). The type of the process gas may vary depending on the target to be removed from the substrate (W). The first gas supply line (160) can be connected to the upper portion of the first reaction chamber (140). The first gas supply line (160) can receive a process gas from the first gas supply source (161) and supply it to the first reaction space (142).

[0073] The first baffle (170) may be positioned between the first diffusion space (132) and the first processing space (112). The first baffle (170) may have a circular shape. A plurality of first holes (171) may be formed in the first baffle (170). Plasma generated in the first reaction space (142) may flow into the first processing space (112) through the first diffusion space (132) and the first holes (171).

[0074] The first exhaust line (180) can exhaust the first processing space (112). The first exhaust line (180) can be connected to the lower part of the first processing chamber (110). The first exhaust line (180) exhausts the first processing space (112) and can control the pressure of the first processing space (112). The first exhaust line (180) can be connected to a pressure reducing device (not shown), such as a pump.

[0075] The second processing unit (200) may perform the same or similar structure / function as the first processing unit (100). The second processing unit (200) may include the same or similar configurations as the first processing unit (100).

[0076] The second processing chamber (210), the second processing space (212), the second pedestal (220), the second-1 flow path (221), the second-2 flow path (222), the second heat blocking member (223), the second diffusion chamber (230), the second diffusion space (232), the second reaction chamber (240), the second reaction space (242), the second plasma source (250), the second coil (251), the second power source (252), the second gas supply line (260), the second gas supply source (261), the second baffle (270), the second hole (271), and the second exhaust line (280) of the first processing unit (100) described above are the first processing chamber (110), the first processing space (112), the first pedestal (120), the first-1 flow path (121), Since the second processing unit (200) can perform the same or similar structure / function as the first-second flow path (122), the first heat blocking member (123), the first diffusion chamber (130), the first diffusion space (132), the first reaction chamber (140), the first reaction space (142), the first plasma source (150), the first coil (151), the first power source (152), the first gas supply line (160), the first gas supply source (161), the first baffle (170), the first hole (171), and the first exhaust line (180), a repeated description thereof is omitted.

[0077] The chiller unit (300) can supply fluid to each of the first processing unit (100) and the second processing unit (200). The fluid supplied by the chiller unit (300) may be a coolant that controls the temperature of the first pedestal (120). Additionally, the fluid supplied by the chiller unit (300) may be a coolant that controls the temperature of the second pedestal (220).

[0078] The chiller unit (300) may include a chiller (310), a first fluid supply line (320), a second fluid supply line (330), a first fluid return line (340), a second fluid return line (350), a plurality of mixing valves (360), a mixing supply line (370), a plurality of temperature sensors (380), and a bypass line (390).

[0079] Hereinafter, the coolant supplied through the chiller unit (300), supplied to the first and second processing units (100, 200), and then returned to the chiller unit (300) is referred to as a fluid. The fluid at the first temperature supplied by the first fluid supply source (311) of the chiller unit (300) is referred to as a first fluid. The fluid at the second temperature supplied by the second fluid supply source (312) of the chiller unit (300) is referred to as a second fluid. The fluid mixed through the mixing valve (360) and flowing into the mixing supply line (370) is referred to as a mixed fluid.

[0080] The chiller (310) can supply fluid. The chiller (310) can control the temperature of the fluid. The chiller (310) can control the temperature of the fluid supplied to the first processing unit (100) and the second processing unit (200). The chiller (310) can include a first fluid supply source (311) and a second fluid supply source (312).

[0081] The first fluid supply source (311) can supply a first fluid having a first temperature. The second fluid supply source (312) can supply a second fluid having a second temperature that is different from the first temperature. The fluid supplied to the processing unit (100, 200) can be circulated and re-introduced through the first fluid supply source (311) and the second fluid supply source (312). The temperature of the circulated and introduced fluid can be adjusted to the first temperature and the second temperature again. The first temperature can be a relatively low temperature, and the second temperature can be a higher temperature than the first temperature. The first fluid can be a cold coolant, and the second fluid can be a hot coolant.

[0082] The first fluid supply line (320) can supply a fluid of a first temperature supplied from a first fluid supply source (311) to a mixing valve (360). The first fluid supply line (320) can include a first main supply line (321) and a first branch supply line (322). The first main supply line (321) can be connected to the first fluid supply source (311). The first branch supply line (322) can be branched from the first main supply line (321). A plurality of first branch supply lines (322) can be provided. The first branch supply line (322) can be connected to a first flow rate control unit of the mixing valve (360). The first quarter supply lines (322) can be connected to the first flow control units of the first mixing valve (361), the second mixing valve (362), the third mixing valve (363), and the fourth mixing valve (364) described below, respectively.

[0083] The second fluid supply line (330) can supply a fluid of a second temperature supplied from a second fluid supply source (312) to the mixing valve (360). The second fluid supply line (330) can include a second main supply line (331) and a second branch supply line (332). The second main supply line (331) can be connected to the second fluid supply source (312). The second branch supply line (332) can be branched from the second main supply line (331). A plurality of second branch supply lines (332) can be provided. The second branch supply line (332) can be connected to a second flow rate control unit of the mixing valve (360). The second quarter supply lines (332) can be connected to the second flow control units of the first mixing valve (361), the second mixing valve (362), the third mixing valve (363), and the fourth mixing valve (364) described below, respectively.

[0084] The mixing valve (360) can control the mixing ratio of the first fluid at the first temperature supplied by the first fluid supply source (311) and the second fluid at the second temperature supplied by the second fluid supply source (312). The mixing valve (360) can include a first flow rate control unit that controls the supply flow rate of the first fluid per unit time, and a second flow rate control unit that controls the supply flow rate of the second fluid per unit time. The first flow rate control unit and the second flow rate control unit can be opening control mechanisms that can control the opening ratio of a pipe and a channel provided by the pipe, respectively. The mixing valve (360) can have a mechanical structure similar to a faucet that can control the mixing ratio of cold water and hot water.

[0085] The mixing valve (360) can adjust the mixing ratio of the first fluid and the second fluid, thereby controlling the temperature of the mixed fluid mixed in the mixing supply line (370) described below. For example, in order to lower the temperature of the mixed fluid, the supply flow rate per unit time of the first fluid can be increased (the opening rate of the channel provided by the first flow control unit can be increased), and / or the supply flow rate per unit time of the second fluid can be decreased (the opening rate of the channel provided by the second flow control unit can be decreased).

[0086] The mixing valve (360) may be provided in multiples. For example, the chiller unit (300) may include a first mixing valve (361) for controlling the temperature of the mixed fluid supplied to the 1-1 flow path (121), a second mixing valve (362) for controlling the temperature of the mixed fluid supplied to the 1-2 flow path (122), a third mixing valve (363) for controlling the temperature of the mixed fluid supplied to the 2-1 flow path (221), and a fourth mixing valve (364) for controlling the temperature of the mixed fluid supplied to the 2-2 flow path (222).

[0087] The mixing valve (360) may be provided at a position adjacent to the first pedestal (120) or the second pedestal (220). For example, the first mixing valve (361) and the second mixing valve (362) may be installed at a position within a range of 20 to 40 cm from the bottom of the first pedestal (120). The third mixing valve (363) and the fourth mixing valve (364) may be installed at a position within a range of 20 to 40 cm from the bottom of the second pedestal (220). By installing the mixing valve (360) at a position as close as possible to the first pedestal (120) or the second pedestal (220), the position where the first and second fluids are mixed becomes close to the first and second pedestals (120, 220), and thus, the length of the mixing supply line (370) described later can be minimized. This can minimize the problem of temperature change that may occur when the mixed fluid flows.

[0088] The mixing supply line (370) may be a line in which the first fluid and the second fluid that have passed through the mixing valve (360) are mixed. The mixing supply line (370) may be a line in which the first and second fluids are mixed to produce a mixed fluid having a set temperature. The mixing supply line (370) may supply the mixed fluid to a path formed in the first and second pedestals (120, 220). For example, the chiller unit (300) may include a plurality of mixing supply lines (370). For example, the first mixing supply line (371) may supply the mixed fluid to the first-first path (121), the second mixing supply line (372) may supply the mixed fluid to the first-second path (122), the third mixing supply line (373) may supply the mixed fluid to the second-first path (221), and the fourth mixing supply line (374) may supply the mixed fluid to the second-second path (222).

[0089] Additionally, the first mixing supply line (371) may be connected to the first mixing valve (361), the second mixing supply line (372) may be connected to the second mixing valve (362), the third mixing supply line (373) may be connected to the third mixing valve (363), and the fourth mixing supply line (374) may be connected to the fourth mixing valve (364).

[0090] Additionally, a temperature sensor (380) may be installed in the mixing supply line (370). The temperature sensor (380) may measure the temperature of the mixed fluid flowing in the mixing supply line (370) in real time and transmit the measured temperature value to the control unit (400) described below. The temperature sensor (380) may be a TC (Thermo-Couple).

[0091] The temperature sensor (380) may be provided in multiple numbers. For example, the chiller unit (300) may include a first temperature sensor (381) installed in a first mixed supply line (371), a second temperature sensor (382) installed in a second mixed supply line (372), a third temperature sensor (383) installed in a third mixed supply line (373), and a fourth temperature sensor (384) installed in a fourth mixed supply line (374).

[0092] The first fluid return line (340) can return the fluid supplied to the first pedestal (120) to the chiller (310). The first fluid return line (340) can include a first main return line (341) and first branch return lines (342). The first main return line (341) can be connected to either the first fluid supply source (311) or the second fluid supply source (312). For example, the first main return line (341) can be connected to the first fluid supply source (311). The first branch return lines (342) can be branched from the first main return line (341). The first branch return lines (342) can be connected to the other ends of the first-first flow path (121) and the first-second flow path (122), respectively.

[0093] The second fluid return line (350) can return the fluid supplied to the second pedestal (220) to the chiller (310). The second fluid return line (350) can include a second main return line (351) and second branch return lines (352). The second main return line (351) can be connected to either the first fluid supply source (311) or the second fluid supply source (312). For example, the second main return line (351) can be connected to the second fluid supply source (312). The second branch return lines (352) can be branched from the second main return line (351). The second branch return lines (352) can be connected to the other ends of the second-1 flow path (221) and the second-2 flow path (222), respectively.

[0094] The bypass line (390) can bypass the fluid flowing upstream from the mixing valve (360) toward the first and second pedestals (120, 220). The bypass line (390) can be provided in multiple numbers. For example, the chiller unit (300) can include a first bypass line (391) that is connected to the first main supply line (321) upstream from the mixing valves (360) and bypasses the first fluid flowing downstream of the first main supply line (321) to the upstream. In addition, the chiller unit (300) can include a second bypass line (392) that is connected to the second main supply line (331) upstream from the mixing valves (360) and bypasses the second fluid flowing downstream of the second main supply line (331) to the upstream. A first bypass valve (393) and a second bypass valve (394), which may be auto valves, may be installed in the first bypass line (391) and the second bypass line (392).

[0095] When the opening rate of the first flow control unit and / or the second flow control unit of the mixing valve (360) is adjusted, the flow rate of the fluid flowing in the mixing supply line (370) changes, and thus, a shock caused by the fluid may occur in the mixing valve (360). To solve this problem, the present invention provides a bypass line (390), and when the opening rate of the mixing valve (360) is adjusted, the valves installed in the bypass line (390) are opened. In this case, the amount of fluid flowing in the first and second branch supply lines (322, 332) is reduced, thereby reducing the shock caused by the fluid. Accordingly, the generation of impurities in the first and second fluid supply lines (320, 330) can be minimized.

[0096] The control unit (400) can control the components of the substrate processing device (10). The control unit (400) may be equipped with a process controller composed of a microprocessor (computer) that executes control of the components of the substrate processing device (10), a user interface composed of a keyboard through which an operator inputs commands to manage the substrate processing device, a display that visually displays the operating status of the substrate processing device, and a memory unit in which a control program for executing a process executed in the substrate processing device (10) under the control of the process controller, or a program for executing a process in each component according to various data and processing conditions, i.e., a processing recipe, is stored. In addition, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium among the memory units, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0097] In addition, the control unit (400) can control the chiller (310), the mixing valve (360), and the bypass valves (393, 394). The control unit (400) can generate a signal for controlling the first temperature of the first fluid supplied by the first fluid supply source (311). The control unit (400) can generate a signal for controlling the second temperature of the second fluid supplied by the second fluid supply source (312). The control unit (400) can generate a signal for controlling the opening rates of the first and second flow rate control units of the mixing valve (360). The control unit (400) can generate a signal for controlling the opening / closing of the bypass valves (393, 394).

[0098] The control unit (400) can learn pre-measurement data (PMP). The pre-measurement data (PMP) may be data regarding the processing uniformity of the substrate (W) according to the temperature of each area of ​​the first and second pedestals (120). The pre-measurement data (PMP) may be process data measured in advance. The control unit (400) can learn the pre-measurement data (PMP). The control unit (400) can calculate and derive a set temperature according to time of the mixed fluid flowing in the first-1 flow path (121), the first-2 flow path (122), the second-2 flow path (222), and the second-2 flow path (222), which can implement the best substrate processing uniformity during the process using plasma.

[0099] The control unit (400) can determine whether the temperature value measured by the temperature sensor (380) is equal to or different from a preset temperature value. If the temperature value of the mixed fluid measured by the temperature sensor (380) is different from the preset temperature value, the temperature of the mixed fluid can be controlled by adjusting the opening rate of the mixing valve (360), more specifically, the opening rates of the first and second flow control units of the mixing valve (360).

[0100] FIG. 2 is a flow chart showing a control method of a substrate processing device according to one embodiment of the present invention.

[0101] Referring to Figures 1 and 2, when the plasma treatment process for the substrate (W) is started,

[0102] In step S10, the control unit (400) adjusts the initial opening rate of the mixing valve (360). The initial opening rate may be preset.

[0103] In step S20, the temperature of the mixed fluid flowing in the mixed supply line (370) is monitored through a temperature sensor (380). At this time, if the monitored temperature does not fall within the set temperature range, step S30 is performed.

[0104] In step S30, the bypass valve (393, 394) is opened. The bypass valve (393, 394) that is opened may be a valve related to a fluid whose opening rate is adjusted in the mixing valve (360) and whose supply flow rate per unit time supplied to the mixing supply line (370) is changed.

[0105] For example, if the opening rate of the first flow control part of the first mixing valve (361) is adjusted to be small in order to increase the temperature of the mixed fluid supplied to the first-first euro (121), the first bypass valve (393) can be opened.

[0106] For example, if the opening rate of the second flow control unit of the fourth mixing valve (364) is adjusted to a small degree to lower the temperature of the mixed fluid supplied to the second-second euro (222), the second bypass valve (394) can be opened.

[0107] Opening of the bypass valve (393, 394) can be performed when the opening rate of the mixing valve (360) is adjusted small, but is not limited thereto and can also be performed when the opening rate of the mixing valve (360) is adjusted large as needed.

[0108] In step S40, after the bypass valve (393, 394) is opened, the opening rate of the mixing valve (360) is adjusted. This allows the temperature of the mixed fluid to reach the set temperature.

[0109] In step S50, after the opening rate adjustment of the mixing valve (360) begins, the bypass valve (393, 394) can be closed.

[0110] After the temperature adjustment of the mixed fluid is completed, the process returns to step S20 to monitor the temperature of the mixed fluid. If the temperature of the mixed fluid does not fall within the set temperature range during monitoring, steps S30, S40, and S50 are sequentially performed again.

[0111] Once the substrate (W) treatment by plasma is completed, the temperature control of the mixed fluid is terminated.

[0112] Hereinafter, the timing at which steps S30 and S50 are performed will be described. Hereinafter, expressing the opening rate adjustment signal as 1 means that the opening rate of the mixing valve (360) is adjusted, and expressing the opening rate adjustment signal as 0 means that the opening rate of the mixing valve (360) is not adjusted. Expressing the bypass valve opening / closing signal as 1 may mean that the bypass valve (393, 394) is opened, and expressing the bypass valve opening / closing signal as 0 may mean that the bypass valve (393, 394) is closed.

[0113] Fig. 3 is a graph showing a first embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve. Referring to Fig. 3, the opening of the bypass valve (393, 394) may be performed a set time before the opening rate adjustment timing of the mixing valve (360), and the closing of the bypass valve (393, 394) may be performed a set time before the opening rate adjustment end point of the mixing valve (360).

[0114] Fig. 4 is a graph showing a second embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve. Referring to Fig. 4, the opening of the bypass valve (393, 394) can be performed together with the opening rate adjustment timing of the mixing valve (360), and the closing of the bypass valve (393, 394) can be performed together with the opening rate adjustment end point of the mixing valve (360).

[0115] Fig. 5 is a graph showing a third embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve. Referring to Fig. 5, the opening of the bypass valve (393, 394) may be performed a set time before the opening rate adjustment timing of the mixing valve (360), and the closing of the bypass valve (393, 394) may be performed together with the end point of the opening rate adjustment of the mixing valve (360).

[0116] Fig. 6 is a graph showing a fourth embodiment of the opening and closing timing of the bypass valve when adjusting the opening rate of the mixing valve. Referring to Fig. 6, the opening of the bypass valve (393, 394) may be performed a set time before the opening rate adjustment timing of the mixing valve (360), and the closing of the bypass valve (393, 394) may be performed a set time after the opening rate adjustment end point of the mixing valve (360).

[0117] As can be seen from FIGS. 3 to 6, the opening of the bypass valves (393, 394) is to alleviate the impact of the fluid on the mixing valve (360) when the opening rate adjustment of the mixing valve (360) occurs. Therefore, it may be desirable for the opening of the bypass valves (393, 394) to occur simultaneously with the opening rate adjustment of the mixing valve (360) or before a set time before the opening rate adjustment occurs.

[0118] It should be understood that exemplary embodiments have been disclosed herein, and that other variations are possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be interchangeable and used in a selected embodiment, even if not specifically illustrated or described. Such variations should not be considered a departure from the spirit and scope of the present disclosure, and all such modifications apparent to those skilled in the art are intended to be included within the scope of the following claims.

Claims

1. In a device for processing a substrate, A pedestal that supports the substrate and has a fluid path formed therein to control the temperature of the substrate; and Includes a chiller unit that supplies the fluid to the above-mentioned euro, The above chiller unit, A first fluid supply source supplying a first fluid at a first temperature; A second fluid supply source that supplies a second fluid having a second temperature different from the first temperature; and A substrate processing device including a mixing valve installed downstream of the first fluid supply source and the second fluid supply source, installed upstream of the flow path, and adjusting a mixing ratio of the first fluid and the second fluid of the mixed fluid, the mixed fluid being a fluid in which the first fluid and the second fluid are mixed.

2. In paragraph 1, The above euros are provided in multiples, The above mentioned Euros are, A first flow path corresponding to a first region of a substrate supported on the pedestal; and A substrate processing device including a second flow path corresponding to a second region different from the first region of the substrate supported on the pedestal.

3. In paragraph 2, The first euro is formed at a position corresponding to the edge area of ​​the substrate supported on the pedestal, The above second euro is a substrate processing device formed at a position corresponding to the central area of ​​the substrate supported on the pedestal.

4. In paragraph 2, The above mixing valve is provided in multiples, A plurality of the above mixing valves, A first mixing valve that adjusts the mixing ratio of the first fluid and the second fluid of the first mixed fluid supplied to the first flow path; and A substrate processing device including a second mixing valve that adjusts the mixing ratio of the first fluid and the second fluid of the second mixed fluid supplied from the second oil.

5. In paragraph 4, a first mixing supply line located between the first mixing valve and the first flow path; and A substrate processing device comprising a second mixing supply line positioned between the second mixing valve and the second flow path.

6. In paragraph 5, A substrate processing device in which temperature sensors for measuring the temperatures of the first mixed fluid and the second mixed fluid are installed in the first mixed supply line and the second mixed supply line, respectively.

7. In paragraph 5, The above chiller unit, A first fluid supply line is included that supplies the first fluid from the first fluid supply source to the first fluid path, The above first fluid supply line, a first main supply line connected to the first fluid supply source; and Includes a plurality of first branch supply lines branching from the first main supply line, A substrate processing device wherein the first branch supply lines are configured to supply the first fluid to the first mixed supply line and the second mixed supply line, respectively.

8. In paragraph 7, The above chiller unit, Includes a first fluid return line for returning the fluid supplied to the above-mentioned Euro, The above first fluid return line is, a first main return line connected to the first fluid supply source or the second fluid supply source; and Includes a plurality of first branch return lines branching from the first main return line, A substrate processing device in which the first branch return lines are connected to the first flow path and the second flow path, respectively, to return the fluid flowing in the first flow path and the second flow path to the first fluid supply source or the second fluid supply source.

9. In paragraph 1, The above mixing valve, A substrate processing device installed at a location within a range of 20 to 40 cm from the pedestal.

10. In paragraph 1, A first fluid supply line connecting the first fluid supply source and the mixing valve; A second fluid supply line connecting the second fluid supply source and the mixing valve; a first bypass line connected to the first fluid supply line upstream of the mixing valve; and A substrate processing device comprising a second bypass line connected to the second fluid supply line upstream of the mixing valve.

11. In paragraph 10, The above device, Including more control units, The above control unit, A substrate processing device that controls the chiller unit to open a bypass valve installed in the first bypass line or the second bypass line when adjusting the opening rate of the mixing valve.

12. In paragraph 11, The above control unit, A substrate processing device that controls the chiller unit to open the bypass valve when the opening rate of the mixing valve is adjusted to a small value.

13. In paragraph 11, The above control unit, A substrate processing device that controls the chiller unit to open the bypass valve when adjusting the opening rate of the mixing valve or before a set time for adjusting the opening rate of the mixing valve.

14. In a device for processing a substrate, A first processing unit for processing a substrate using plasma; A second processing unit arranged parallel to the first processing unit and processing a substrate using plasma; and A chiller unit is included that supplies fluid to control the temperature of the substrate to the first processing unit and the second processing unit, The first processing unit and the second processing unit each include a first pedestal and second pedestals, each having a flow path formed therein for supporting a substrate and controlling a temperature of the substrate, The above chiller unit, configured to supply the fluid to the first pedestal and the second pedestal, A first fluid supply source supplying a first fluid at a first temperature; A second fluid supply source that supplies a second fluid having a second temperature different from the first temperature; and A substrate processing device comprising a mixing valve installed downstream of the first fluid supply source and the second fluid supply source, installed upstream of the first pedestal and the second pedestal, and controlling the temperature of the mixed fluid by adjusting the mixing ratio of the first fluid and the second fluid of the mixed fluid supplied to the first pedestal or the second pedestal, the mixed fluid being a fluid in which the first fluid and the second fluid are mixed.

15. In paragraph 14, The above chiller unit, A substrate processing device including a mixing supply line provided between the mixing valve and the first pedestal or between the mixing valve and the second pedestal and through which the mixed fluid flows.

16. In paragraph 15, The above chiller unit, Further comprising a temperature sensor for measuring the temperature of the mixed fluid flowing in the mixed supply line; The above device, Further comprising a control unit for controlling the above chiller unit, The above control unit, A substrate processing device that controls the chiller unit to change the opening rate of the mixing valve when the temperature value of the mixed fluid measured by the temperature sensor is different from a preset temperature value.

17. In paragraph 16, The above chiller unit, A first fluid supply line for supplying the first fluid from the first fluid supply source to the first pedestal or the second pedestal; A second fluid supply line for supplying the second fluid from the second fluid supply source to the first pedestal or the second pedestal; A first bypass line connected to the first fluid supply line and having a first bypass valve installed therein; and It is connected to the second fluid supply line and includes a second bypass line having a second bypass valve installed therein, The above control unit, A substrate processing device that controls the chiller unit to open the first bypass valve or the second bypass valve when the opening rate of the mixing valve is changed.

18. In paragraph 16, A substrate processing device in which the above set temperature value is set based on pre-measured substrate processing data.

19. In the method of processing the substrate, The substrate is supported on a pedestal formed with a first flow path and a second flow path formed at a different position from the first flow path, and a fluid is supplied to the first flow path and the second flow path to control the temperature of each region of the substrate. A substrate processing method in which the temperature of the fluid supplied to the first and second flow paths is controlled by mixing a first fluid having a first temperature and a second fluid having a second temperature different from the first temperature.

20. In paragraph 19, The mixing ratio of the first fluid and the second fluid is controlled using a mixing valve, The above mixing valve, It includes a first flow rate control unit that controls the supply flow rate per unit time of the first fluid and a second flow rate control unit that controls the supply flow rate per unit time of the second fluid, A substrate processing method in which the mixing ratio of the first fluid and the second fluid is adjusted according to the opening rate control of the first flow control unit and the second flow control unit.

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