Processing device and processing method

Abstract

This processing device comprises a first member, a second member, an electro-adhesive gel (EAG) sheet that is disposed between the first and second members, and a control unit. The EAG sheet has an EAG layer, a plurality of electrode pairs having two electrodes, and a substrate on which the plurality of electrode pairs are arranged. The control unit independently controls the thermal conductivity of the EAG layer in the vicinity of each of the plurality of electrode pairs by independently controlling the voltage applied to each of the plurality of electrode pairs, so that the temperature distribution of the first member or the second member becomes a predetermined temperature distribution through heat exchange between the first and second members.

Description

Processing device and processing method

[0001] Various aspects and embodiments of the present disclosure relate to processing devices and methods.

[0002] Patent Document 1 below discloses that "After extensive research, the inventors focused on electrorheological gel (hereinafter also referred to as ER gel) whose surface adhesiveness changes when a voltage is applied. ER gel's fixing force can be changed by controlling the voltage, and it has excellent responsiveness to changes in voltage. Therefore, the inventors came up with the idea that by blending ER gel with a filler that has excellent thermal conductivity, a thermal conductivity variable molded body with a simple structure can be obtained, and this led to the completion of the present invention."

[0003] Patent No. 5987699

[0004] The present disclosure provides a processing apparatus and a processing method that can accurately control the temperature distribution of a member.

[0005] A processing device according to one aspect of the present disclosure includes a first member, a second member, an electro-adhesive gel (EAG) sheet disposed between the first and second members, and a control unit. The EAG sheet includes an EAG layer, a plurality of electrode pairs each having two electrodes, and a substrate on which the plurality of electrode pairs are disposed. The control unit independently controls the thermal conductivity of the EAG layer near each of the plurality of electrode pairs by independently controlling the voltages applied to each of the plurality of electrode pairs so that a predetermined temperature distribution is achieved in the first or second member through heat exchange between the first and second members.

[0006] According to various aspects and embodiments of the present disclosure, the temperature distribution of a member can be controlled with precision.

[0007] FIG. 1 is a schematic diagram showing an example of a plasma processing apparatus. FIG. 2 is an enlarged cross-sectional view showing an example of a detailed structure near the outer periphery of a shower head. FIG. 3 is a cross-sectional view showing an example of an EAG sheet structure. FIG. 4 is a plan view showing an example of an arrangement of flow channels in a cooling plate. FIG. 5 is a plan view showing an example of an arrangement of electrode pairs. FIG. 6 is a flowchart showing an example of a processing method. FIG. 7 is a cross-sectional view showing another example of an EAG sheet structure. FIG. 8 is a cross-sectional view showing another example of an EAG sheet structure. FIG. 9 is a cross-sectional view showing another example of an EAG sheet structure. FIG. 10 is an enlarged cross-sectional view showing another example of a detailed structure near the outer periphery of a shower head. FIG. 11 is a flowchart showing another example of a processing method.

[0008] Hereinafter, embodiments of a processing apparatus and a processing method will be described in detail with reference to the drawings. However, the processing apparatus and the processing method disclosed below are not limited to the following embodiments.

[0009] When two components are in contact with each other, the heat transfer coefficient may vary from one location to another depending on the state of the contact surface. Furthermore, the state of the contact surface may change due to temperature changes or changes over time, which may further change the heat transfer coefficient. When heat is transferred between two components via a contact surface, if the heat transfer coefficient varies from location to location, it is difficult to control the temperature of one component by controlling the temperature of the other component to achieve the desired temperature distribution.

[0010] Therefore, the present disclosure provides a technique that can accurately control the temperature distribution of a member.

[0011] [Configuration of Plasma Processing Apparatus 1] An example of the configuration of a plasma processing system will be described below. Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus 1. The plasma processing apparatus 1 is an example of a processing apparatus.

[0012] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 is an example of a processing vessel. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0013] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0014] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0015] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0016] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer fluid, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0017] A showerhead 13 is provided at the top of the plasma processing chamber 10. The showerhead 13 is supported by a support member 10d provided on the sidewall 10a of the plasma processing chamber 10. A cooling plate 10f is provided above the showerhead 13. The cooling plate 10f has a flow path 10g through which a heat transfer fluid such as brine or gas flows. A deposit shield 10b and a member 10c are provided below the support member 10d. The deposit shield 10b covers the sidewall 10a and prevents reaction by-products (so-called deposits) generated during processing in the plasma processing space 10s from adhering to the sidewall 10a. The member 10c is made of a conductive material such as silicon and is disposed on the underside of the showerhead 13 along the periphery. The member 10c is grounded. The member 10c and the deposit shield 10b are heated by the plasma generated in the plasma processing space 10s.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0027] [Structure of the Upper Part of the Plasma Processing Chamber 10] Figure 2 is an enlarged cross-sectional view showing an example of the detailed structure of the outer periphery of the showerhead 13. EAG sheets 50 are arranged between the cooling plate 10f and the support member 10d, between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c. The cooling plate 10f exchanges heat with the support member 10d via the EAG sheet 50, thereby cooling the support member 10d. The support member 10d exchanges heat with the deposit shield 10b and the member 10c via the EAG sheet 50, thereby cooling the deposit shield 10b and the member 10c. In the relationship between the cooling plate 10f and the support member 10d, the cooling plate 10f is an example of a first member, and the support member 10d is an example of a second member. In addition, in the relationship between the support member 10d and the deposit shield 10b and member 10c, the support member 10d is an example of a first member, and the deposit shield 10b and member 10c are an example of a second member.

[0028] The EAG sheet 50 has a structure as shown in FIG. 3, for example. FIG. 3 is a cross-sectional view showing an example of the structure of the EAG sheet 50. In FIG. 3, the EAG sheet 50 is disposed between member A and member B. Member A and member B may be, for example, a cooling plate 10f and a support member 10d, a support member 10d and a deposit shield 10b, or a support member 10d and a member 10c. Alternatively, a recess shallower than the thickness of the EAG sheet 50 may be formed in member A or member B, and the EAG sheet 50 may be disposed in the recess. This facilitates positioning of the EAG sheet 50.

[0029] The EAG sheet 50 includes an electro-rheological (ER) gel 51, multiple electrode pairs 52, and a substrate 53. The ER gel 51 is an example of an EAG layer. Each electrode pair 52 includes an electrode 520 and an electrode 521, and is disposed on the surface of the substrate 53. In the example of FIG. 3 , the electrode pairs 52 and the ER gel 51 are disposed on one surface of the substrate 53, with the ER gel 51 of the EAG sheet 50 disposed on the component A side and the substrate 53 disposed on the component B side.

[0030] A voltage controlled by the control unit 2 is applied between the electrode 520 and the electrode 521. The thermal conductivity of the ER gel 51 near the electrode 520 and the electrode 521 changes depending on the magnitude of the voltage applied between the electrode 520 and the electrode 521. The magnitude of the voltage applied between the electrode 520 and the electrode 521 is controlled independently for each electrode pair 52. By controlling the voltage applied to each electrode pair 52, the coefficient of heat transfer between the member A and the member B via the ER gel 51 near the electrode pair 52 can be individually controlled.

[0031] A thermally conductive and elastic thermally conductive sheet 54 with high thermal conductivity is disposed between the substrate 53 and the member B. An example of such a thermally conductive sheet 54 is a conductive metal foil tape in which metal particles such as gold, silver, copper, or aluminum are dispersed in an adhesive resin such as epoxy. Note that instead of the thermally conductive sheet 54, an adhesive such as a metal paste adhesive made of gold, silver, copper, or aluminum, or an adhesive made of heat-resistant rubber (mainly composed of organic polymers such as natural rubber or synthetic rubber), silicone rubber, or silicon may be disposed.

[0032] The substrate 53 may be made of an insulating material such as a resin film of polyimide, polyethylene terephthalate, or the like, a resin plate of glass, epoxy resin, phenolic resin, or the like, or a ceramic such as alumina, etc. The substrate 53 is preferably made of a material with high thermal conductivity.

[0033] The ER gel 51 includes gel and particles. Examples of gel include silicone gel, silicone oil, mineral oil, etc. Silicone gel is obtained by mixing an ER fluid with two types of gelling agents and a catalyst, and then performing a heat treatment to gel it.

[0034] Examples of the fine particles include inorganic-organic composite fine particles having an acrylic polymer core and coated with tin oxide, silica particles, polymer electrolyte particles, conductive polymer particles, conductive polymer particles with coated surfaces, sodium polymethacrylate particles, lithium polymethacrylate, cellulose, zeolite, carbon, polyaniline, and the like.

[0035] Furthermore, by using particles such as plate-like alumina, metallic silicon, or SiC as the fine particles, it is possible to improve the thermal conductivity of the ER gel 51. Furthermore, a three-dimensional microstructure formed by a 3D printer, photolithography, or the like may be added to the ER gel 51.

[0036] When two members A and B are in contact with each other, the heat transfer coefficient may vary from one location to another depending on the state of the contact surface. Furthermore, the state of the contact surface may change due to temperature changes or changes over time in members A and B, further changing the heat transfer coefficient. Furthermore, the state of the contact surface and changes in the state of the contact surface may differ from device to device. When heat is transferred between two members A and B via the contact surface, if the heat transfer coefficient varies from location to location, it is difficult to control the temperature of one member by controlling the temperature of the other member to achieve the desired temperature distribution in the other member.

[0037] 3, for example, a gel-like ER gel 51 is disposed between member A and substrate 53, and an elastic heat-conducting sheet 54 is disposed between substrate 53 and member B. This improves the adhesion between member A and ER gel 51 and between substrate 53 and member B. This makes it possible to suppress uneven heat transfer between member A and member B via the EAG sheet 50. Therefore, when controlling the temperature of one of member A and member B to control the temperature of the other, the temperature distribution of the other can be controlled to a desired temperature distribution.

[0038] Furthermore, a gel-like ER gel 51 is disposed between member A and substrate 53, and an elastic heat-conducting sheet 54 is disposed between substrate 53 and member B. As a result, even if members A and B deform due to temperature changes or changes over time in members A and B, the ER gel 51 and heat-conducting sheet 54 deform in accordance with the deformation of members A and B. As a result, even if members A and B deform due to temperature changes or changes over time in members A and B, it is possible to maintain adhesion between member A and ER gel 51 and between substrate 53 and member B.

[0039] Furthermore, a flow path 10g is arranged inside the cooling plate 10f, as shown in Fig. 4. Fig. 4 is a plan view showing an example of the arrangement of the flow paths 10g of the cooling plate 10f. In Fig. 4, the flow paths 10g are indicated by dashed lines.

[0040] A temperature-controlled heat transfer fluid is supplied into the cooling plate 10f from a temperature control device such as a chiller unit (not shown). The heat transfer fluid supplied from the temperature control device enters the flow path 10g from an inlet 10g1 and flows through the flow path 10g. The heat transfer fluid flowing through the flow path 10g exchanges heat with the support member 10d via the cooling plate 10f and the EAG sheet 50, and is returned to the temperature control device from an outlet 10g2.

[0041] Because the heat transfer fluid flows out of the outlet 10g2 after exchanging heat with the support member 10d, the temperature of the cooling plate 10f in the region R2 near the outlet 10g2 may be higher than the temperature of the cooling plate 10f in the region R1 near the inlet 10g1. In this case, even if the temperature of the heat transfer fluid is controlled, a temperature gradient occurs on the cooling plate 10f along the flow of the heat transfer fluid, resulting in a bias in the temperature distribution of the cooling plate 10f. This also results in a bias in the temperature distribution of the support member 10d that exchanges heat with the cooling plate 10f.

[0042] Therefore, in this embodiment, an EAG sheet 50 is disposed between the cooling plate 10f and the support member 10d. Also, in this embodiment, as shown in FIG. 5, for example, multiple electrode pairs 52 are disposed along the surface of the support member 10d on the cooling plate 10f side. By independently controlling the voltage applied to each electrode pair 52, the heat transfer coefficient between the cooling plate 10f and the support member 10d can be partially controlled. For example, the voltage applied to each electrode pair 52 is controlled so that the heat transfer coefficient of the ER gel 51 is low in the relatively low-temperature portion of the cooling plate 10f and high in the relatively high-temperature portion of the cooling plate 10f. This allows the temperature distribution of the support member 10d to be suppressed even when the temperature distribution of the cooling plate 10f is uneven.

[0043] Furthermore, within the plasma processing chamber 10, there are components that are heated to a predetermined temperature for the purpose of suppressing deposition during plasma processing, etc. Among these components, there are some that are heated by heat input from the plasma. Examples of such components include the deposit shield 10b and the member 10c (see FIG. 2).

[0044] Therefore, in this embodiment, an EAG sheet 50 is disposed between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c to control the heat transfer coefficient between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c. For example, when plasma processing is performed in the plasma processing chamber 10, the voltage applied to the electrode pair 52 of the EAG sheet 50 is controlled so as to reduce the heat transfer coefficient between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c. This allows the deposit shield 10b and the member 10c to be heated by heat input from the plasma without using a heating means such as a heater.

[0045] Furthermore, the deposit shield 10b and the member 10c are provided with temperature sensors (not shown). When the deposit shield 10b and the member 10c reach a predetermined temperature or higher, the voltage applied to the electrode pair 52 of the EAG sheet 50 is controlled so as to increase the heat transfer coefficient between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c. This allows the temperatures of the deposit shield 10b and the member 10c to be lowered by heat exchange with the support member 10d.

[0046] Furthermore, when plasma processing is completed in the plasma processing chamber 10, the voltage applied to the electrode pair 52 of the EAG sheet 50 is controlled so as to increase the heat transfer coefficient between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c, thereby enabling the temperatures of the deposit shield 10b and the member 10c to be rapidly reduced.

[0047] The EAG sheet 50 disposed between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c, may have multiple electrode pairs 52 arranged along the extension direction of the EAG sheet 50, similar to the EAG sheet 50 shown in FIG. 5. This allows the temperature distribution of the deposit shield 10b and the member 10c to be controlled not only to a uniform temperature distribution, but also to an intentionally biased temperature distribution. As another example, the EAG sheet 50 disposed between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c may have one electrode pair 52 arranged along the extension direction of the EAG sheet 50.

[0048] [Method for Processing Substrate W] Fig. 6 is a flowchart showing an example of a processing method. Each step illustrated in Fig. 6 is realized by the control unit 2 controlling each part of the plasma processing apparatus 1. Note that the flowchart illustrated in Fig. 6 explains, as an example, the control of EAG sheets 50 arranged between the cooling plate 10f and the support member 10d, between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c.

[0049] First, the thermal conductivity distribution of the EAG sheet 50 disposed between the cooling plate 10f and the support member 10d is controlled (step S10). Step S10 is an example of process a). In step S10, the voltages applied to the electrode pairs 52 included in the EAG sheet 50 disposed between the cooling plate 10f and the support member 10d are individually controlled so as to reduce the bias in the temperature distribution in the support member 10d.

[0050] Next, the thermal conductivity of the EAG sheet 50 arranged between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c is controlled to be small (step S11). In step S11, the voltage applied to the electrode pairs 52 of the EAG sheet 50 arranged between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c is controlled to be, for example, a minimum (for example, 0 V).

[0051] Next, a substrate W to be processed is loaded into the plasma processing chamber 10 (step S12). In step S12, a gate valve (not shown) provided on the sidewall 10a of the plasma processing chamber 10 is opened, and the substrate W is loaded into the plasma processing chamber 10 by a transfer robot (not shown). The substrate W is then transferred to lift pins (not shown) protruding from the upper surface of the electrostatic chuck 1111. The lift pins (not shown) are then lowered by driving an elevation mechanism (not shown), thereby placing the substrate W on the upper surface of the electrostatic chuck 1111. The elevation mechanism (not shown) is controlled by the controller 2.

[0052] Next, processing of the substrate W is initiated (step S13). Step S13 is an example of process b). In step S13, a processing gas is supplied from the gas supply unit 20 into the plasma processing chamber 10 via the shower head 13. The pressure inside the plasma processing chamber 10 is then adjusted to a predetermined level by the exhaust system 40. RF power is then supplied from the power supply 30 into the plasma processing chamber 10, whereby the processing gas in the plasma processing chamber 10 is converted into plasma, and plasma is generated in the plasma processing chamber 10. The plasma generated in the plasma processing chamber 10 then performs processing such as etching on the substrate W.

[0053] Furthermore, the plasma generated in the plasma processing space 10s heats the member 10c and the deposit shield 10b, suppressing the adhesion of deposits to the member 10c and the deposit shield 10b. In step S11, the thermal conductivity of the EAG sheet 50 disposed between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c, is controlled to be small. Therefore, the member 10c and the deposit shield 10b are efficiently heated by the plasma generated in the plasma processing space 10s.

[0054] Next, it is determined whether the temperature of the components in the plasma processing chamber 10 has reached a predetermined first temperature or higher (step S14). The components in the plasma processing chamber 10 are, for example, the deposit shield 10b and the component 10c. If the temperature of the components in the plasma processing chamber 10 is lower than the first temperature (step S14: No), the process shown in step S16 is executed.

[0055] On the other hand, if the temperature of the components in the plasma processing chamber 10 reaches or exceeds the first temperature (step S14: Yes), the voltage applied to the electrode pair 52 of the EAG sheet 50 is controlled so as to increase the thermal conductivity of the EAG sheet 50 (step S15). Step S15 is an example of process d). This promotes heat exchange between the deposit shield 10b and the component 10c and the support component 10d, lowering the temperatures of the deposit shield 10b and the component 10c. This prevents overheating of the deposit shield 10b and the component 10c.

[0056] Next, it is determined whether the temperature of the components in the plasma processing chamber 10 has reached a predetermined second temperature or lower (step S16). The second temperature is lower than the first temperature. If the temperature of the components in the plasma processing chamber 10 is higher than the second temperature (step S16: No), the process shown in step S18 is performed.

[0057] On the other hand, if the temperature of the components in the plasma processing chamber 10 falls below the second temperature (step S16: Yes), the voltage applied to the electrode pair 52 of the EAG sheet 50 is controlled so as to reduce the thermal conductivity of the EAG sheet 50 (step S17). Step S17 is an example of process c). This suppresses heat exchange between the deposit-shield 10b and the component 10c and the support component 10d, and the temperatures of the deposit-shield 10b and the component 10c increase due to heat input from the plasma. By performing steps S14 to S17, the temperatures of the deposit-shield 10b and the component 10c can be maintained between the first temperature and the second temperature.

[0058] Next, it is determined whether or not to terminate the processing of the substrate W (step S18). If the processing of the substrate W is not to be terminated (step S18: No), the processing shown in step S14 is executed again.

[0059] On the other hand, when the processing of the substrate W is to be terminated (step S18: Yes), the thermal conductivity between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c is controlled to be increased (step S19). Step S19 is an example of process e). In step S19, the voltage applied to the electrode pairs 52 of the EAG sheet 50 arranged between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c is controlled to be, for example, maximum. This allows the temperatures of the deposit shield 10b and the member 10c to be quickly reduced.

[0060] Next, the substrate W is unloaded (step S20). In step S20, the substrate W is lifted by lift pins (not shown) driven by an elevating mechanism (not shown). Then, a gate valve (not shown) is opened, and the substrate W is unloaded from the plasma processing chamber 10 by a transfer robot (not shown). Then, the process shown in this flowchart is completed.

[0061] The above describes an embodiment. As described above, the processing apparatus (plasma processing apparatus 1) of this embodiment includes a first member (cooling plate 10f), a second member (support member 10d), an electro-adhesive gel (EAG) sheet (EAG sheet 50) disposed between the first and second members, and a control unit (control unit 2). The EAG sheet includes an EAG layer (ER gel 51), multiple electrode pairs (electrode pair 52) each having two electrodes (electrode 520 and electrode 521), and a substrate (substrate 53) on which the multiple electrode pairs are disposed. The control unit independently controls the thermal conductivity of the EAG layer near each of the multiple electrode pairs by independently controlling the voltages applied to each of the multiple electrode pairs so that the temperature distribution of the first or second member is a predetermined temperature distribution due to heat exchange between the first and second members. This allows for accurate control of the temperature distribution of the members.

[0062] In the above-described embodiment, the electrode pair and the EAG layer are disposed on one side of the substrate, and the EAG layer of the EAG sheet is disposed on the first member side, and the substrate is disposed on the second member side, thereby improving the adhesion between the first member and the EAG sheet.

[0063] In the above-described embodiment, a sheet or adhesive having high thermal conductivity and elasticity is placed between the substrate and the second member, thereby improving the adhesion between the second member and the substrate of the EAG sheet.

[0064] In the above-described embodiment, a temperature-controlled heat transfer fluid flows inside the first member, and the first member exchanges heat with the second member via the EAG sheet. Even if a temperature change in the heat transfer fluid causes a deviation in the temperature distribution of the first member, the deviation in the temperature distribution of the second member can be suppressed by independently controlling the voltages applied to the multiple electrode pairs.

[0065] The processing apparatus in the above-described embodiment further includes a processing vessel (plasma processing chamber 10) that processes a wafer (substrate W) using plasma generated therein. The second member is heated by heat input from the plasma in the processing vessel. When plasma is generated in the processing vessel and the temperature of the second member is equal to or higher than a predetermined first temperature, the control unit controls the voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet. This prevents the second member from overheating.

[0066] In the above embodiment, the control unit controls the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet decreases when the temperature of the second member falls below a second temperature that is lower than the first temperature. This allows the second member to be efficiently heated by the plasma generated in the processing chamber without providing a heater for heating the second member.

[0067] In the above embodiment, when plasma generation in the processing chamber is completed, the control unit controls the voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet, thereby quickly lowering the temperature of the second member.

[0068] The processing apparatus in the above-described embodiment further includes a shower head 13. The first member and the second member are provided around the shower head 13. This allows the temperature distribution of the members around the shower head 13 to be controlled with high precision.

[0069] The above-described embodiment is a processing method for a processing apparatus. The processing apparatus includes a first member, a second member, an electro-adhesive gel (EAG) sheet disposed between the first and second members, a processing chamber for processing a wafer using plasma generated therein, and a control unit. The EAG sheet includes an EAG layer, multiple electrode pairs each having two electrodes, and a substrate on which the multiple electrode pairs are disposed. In the processing method, the control unit executes step a). In step a), the voltages applied to each of the multiple electrode pairs are independently controlled to independently control the thermal conductivity of the EAG layer near each of the multiple electrode pairs so that the temperature distribution of the first member or the second member becomes a predetermined temperature distribution due to heat exchange between the first member and the second member. This allows for accurate control of the temperature distribution of the members.

[0070] In the above-described embodiment, a temperature-controlled heat transfer fluid flows inside the first member, and the second member exchanges heat with the first member via the EAG sheet and is heated by heat input from the plasma in the processing vessel. The control unit further executes steps b) and c). In step b), plasma is generated in the processing vessel. In step c), while plasma is being generated in the processing vessel, the voltage applied to the electrode pair is controlled so as to reduce the thermal conductivity of the EAG sheet. This allows the second member to be efficiently heated by the plasma generated in the processing vessel without providing a heater for heating the second member.

[0071] In the above-described embodiment, the control unit further executes step d), in which, when the temperature of the second member reaches a predetermined temperature, the voltage applied to the electrode pair is controlled so as to increase the thermal conductivity of the EAG sheet, thereby preventing overheating of the second member.

[0072] In the above embodiment, the control unit further executes step e), in which, when plasma generation in the processing chamber is completed, the voltage applied to the electrode pair is controlled so as to increase the thermal conductivity of the EAG sheet, thereby quickly lowering the temperature of the second member.

[0073] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0074] For example, in the EAG sheet 50 in the above-described embodiment, the ER gel 51 and the electrode pair 52 are disposed on one side of the substrate 53, but the disclosed technology is not limited to this. As another example, the ER gel 51 and the electrode pair 52 may be disposed on both sides of the substrate 53, as shown in Fig. 7. Fig. 7 is a cross-sectional view showing another example of the structure of the EAG sheet 50.

[0075] The EAG sheet 50 illustrated in FIG. 7 includes an ER gel 51a, an ER gel 51b, an electrode pair 52a, an electrode pair 52b, and a substrate 53. The electrode pair 52a includes an electrode 520a and an electrode 521a. The electrode pair 52b includes an electrode 520b and an electrode 521b. The ER gel 51a and the electrode pair 52a are disposed on one side of the substrate 53, and the ER gel 51b and the electrode pair 52b are disposed on the other side of the substrate 53. The electrode pair 52a is an example of a first electrode pair, and the electrode pair 52b is an example of a second electrode pair. The ER gel 51a is an example of a first EAG layer, and the ER gel 51b is an example of a second EAG layer.

[0076] Alternatively, the EAG sheet 50 may have a structure in which an ER gel 51 is sandwiched between two substrates 53, as shown in FIG. 8 . FIG. 8 is a cross-sectional view illustrating another example of the structure of the EAG sheet 50. The EAG sheet 50 illustrated in FIG. 8 includes an ER gel 51, an electrode pair 52, a substrate 53a, a substrate 53b, a thermally conductive sheet 54a, and a thermally conductive sheet 54b. The ER gel 51 is disposed between the substrates 53a and 53b. The electrode pair 52 includes an electrode 520 and an electrode 521, with the electrode 520 disposed on the substrate 53a and the electrode 521 disposed on the substrate 53b. In the example shown in FIG. 8 , one electrode in the electrode pair 52 is disposed on the surface of the substrate 53a facing the ER gel 51, and the other electrode in each electrode pair 52 is disposed on the surface of the substrate 53b facing the ER gel 51.

[0077] A thermally conductive sheet 54a is disposed between member A and substrate 53a, and a thermally conductive sheet 54b is disposed between member B and substrate 53b. Note that instead of thermally conductive sheets 54a and 54b, an adhesive with high thermal conductivity may be disposed. Substrate 53a is an example of a first substrate, and substrate 53b is an example of a second substrate.

[0078] Furthermore, in the EAG sheet 50, a low thermal conductive member 55 may be disposed at the end of the ER gel 51, as shown in FIG. 9 . The low thermal conductive member 55 may be formed of, for example, heat-resistant rubber (mainly composed of organic polymers such as natural rubber or synthetic rubber), resin (a member made of a polymer compound such as epoxy resin), ceramic (alumina, zirconia), quartz, SUS (Steel Use Stainless Steel), Hastelloy (registered trademark), titanium, Zircaloy, or the like. By disposing the low thermal conductive member 55 at the end of the ER gel 51, leakage of the ER gel 51 to the outside of the EAG sheet 50 is prevented. Furthermore, the ER gel 51 can be prevented from being exposed to plasma, gas, or the like, thereby suppressing deterioration of the ER gel 51.

[0079] 10, a heater 60 for heating the deposit shield 10b and the member 10c may be provided between the EAG sheet 50 and the member 10c. FIG. 10 is an enlarged cross-sectional view showing another example of the detailed structure of the vicinity of the outer periphery of the shower head 13. This allows the deposit shield 10b and the member 10c to be heated to a predetermined temperature before plasma is generated in the plasma processing chamber 10. After plasma is generated in the plasma processing chamber 10, the power supply to the heater 60 may be stopped.

[0080] Fig. 11 is a flowchart showing another example of a processing method. The processing illustrated in Fig. 11 is performed by the plasma processing apparatus 1 having the structure illustrated in Fig. 10. Note that, except for the points described below, the processing in Fig. 11 denoted by the same reference numerals as in Fig. 6 is the same as the processing described in Fig. 6, and therefore the description thereof will be omitted.

[0081] In step S11, the thermal conductivity of the EAG sheets 50 arranged between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c, is controlled to be small, and then power is supplied to the heater 60 (step S30). This allows the temperatures of the deposit shield 10b and the member 10c to be quickly heated to a predetermined temperature.

[0082] In step S15, the thermal conductivity of the EAG sheets 50 arranged between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c is controlled to be high, and then the power supply to the heater 60 is stopped (step S31). This allows the temperatures of the deposit shield 10b and the member 10c to be quickly lowered.

[0083] Furthermore, in step S17, the thermal conductivity of the EAG sheet 50 disposed between the support member 10d and the deposit shield 10b, and between the support member 10d and the member 10c, is controlled to be small, and then power is supplied to the heater 60 again (step S32). This allows the temperatures of the deposit shield 10b and the member 10c to be quickly increased. Note that while plasma is being generated in the plasma processing chamber 10, the deposit shield 10b and the member 10c are heated by the plasma. Therefore, power does not need to be supplied to the heater 60 in step S32.

[0084] In step S19, the thermal conductivity of the EAG sheets 50 arranged between the support member 10d and the deposit shield 10b and between the support member 10d and the member 10c is controlled to be high, and then the power supply to the heater 60 is stopped (step S33). This allows the temperatures of the deposit shield 10b and the member 10c to be quickly lowered.

[0085] In the above-described embodiment, the EAG sheet 50 is disposed between the cooling plate 10 f and the support member 10 d, between the support member 10 d and the deposit shield 10 b, and between the support member 10 d and the member 10 c, but the disclosed technology is not limited to this. The EAG sheet 50 may be disposed between any other two members that have heat transfer, such as between the electrostatic chuck 1111 and the base 1110, or between the electrostatic chuck 1111 and the ring assembly 112.

[0086] In the above embodiment, the plasma processing apparatus 1 is described as performing processing using a capacitively coupled plasma (CCP) as an example of a plasma source, but the plasma source is not limited to this. Examples of plasma sources other than the capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave-excited plasma (HWP).

[0087] It should be noted that the disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The heat transfer coefficients referred to in the examples of this application may also be referred to as contact heat transfer coefficients. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0088] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0089] (Supplementary Note 1) A processing device comprising: a first member, a second member, an EAG (Electro-Adhesive Gel) sheet disposed between the first member and the second member, and a control unit, wherein the EAG sheet has an EAG layer, a plurality of electrode pairs each having two electrodes, and a substrate on which the plurality of electrode pairs are disposed, and the control unit independently controls the thermal conductivity of the EAG layer near each of the plurality of electrode pairs by independently controlling the voltages applied to the plurality of electrode pairs so that a temperature distribution in the first member or the second member becomes a predetermined temperature distribution due to heat exchange between the first member and the second member. (Supplementary Note 2) The processing device according to Supplementary Note 1, wherein the electrode pairs and the EAG layer are disposed on one side of the substrate, and the EAG layer of the EAG sheet is disposed on the first member side, and the substrate is disposed on the second member side. (Supplementary Note 3) The processing device according to Supplementary Note 2, wherein a conductive sheet or adhesive is disposed between the substrate and the second member. (Supplementary Note 4) The processing device according to Supplementary Note 1, wherein the electrode pair includes a first electrode pair and a second electrode pair, the EAG layer includes a first EAG layer and a second EAG layer, the first electrode pair and the first EAG layer are disposed on one side of the substrate, and the second electrode pair and the second EAG layer are disposed on the other side of the substrate, and the first EAG layer is disposed on the first member side and the second EAG layer is disposed on the second member side. (Supplementary Note 5) The processing device according to Supplementary Note 1, wherein the substrate includes a first substrate and a second substrate, the EAG layer is disposed between the first substrate and the second substrate, one electrode included in each of the electrode pairs is disposed on the surface of the first substrate facing the EAG layer, and the other electrode included in each of the electrode pairs is disposed on the surface of the second substrate facing the EAG layer. (Supplementary Note 6) The processing device according to Supplementary Note 5, wherein the first substrate is disposed on the first member side, the second substrate is disposed on the second member side, and a conductive and elastic sheet or adhesive is disposed between the first substrate and the first member, and between the second substrate and the second member.(Supplementary Note 7) The processing apparatus according to any one of Supplementary Notes 1 to 6, wherein a temperature-controlled heat transfer fluid flows inside the first member, and the first member exchanges heat with the second member via the EAG sheet. (Supplementary Note 8) The processing apparatus according to Supplementary Note 7, further comprising a processing vessel that processes a wafer using plasma generated therein, wherein the second member is heated by heat input from the plasma in the processing vessel, and the controller controls the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet is increased when plasma is generated in the processing vessel and the temperature of the second member is equal to or higher than a predetermined first temperature. (Supplementary Note 9) The processing apparatus according to Supplementary Note 8, wherein the controller controls the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet is decreased when the temperature of the second member is equal to or lower than a second temperature that is lower than the first temperature. (Supplementary Note 10) The processing apparatus according to Supplementary Note 8 or 9, wherein the control unit controls the voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet when plasma generation in the processing chamber is completed. (Supplementary Note 11) The processing apparatus according to any one of Supplementary Notes 8 to 10, wherein a heater is embedded inside the second member, and the control unit supplies power to the heater when controlling the voltage applied to the electrode pair so as to decrease the thermal conductivity of the EAG sheet. (Supplementary Note 12) The processing apparatus according to any one of Supplementary Notes 1 to 11, further comprising a shower head, and wherein the first member and the second member are provided around the shower head.(Supplementary Note 13) A processing method comprising: a first member, a second member, an EAG (Electro-Adhesive Gel) sheet disposed between the first member and the second member, a processing vessel for processing a wafer using plasma generated inside, and a control unit, wherein the EAG sheet has an EAG layer, a plurality of electrode pairs each having two electrodes, and a substrate on which the plurality of electrode pairs are disposed, and wherein the control unit executes the step of: a) independently controlling the thermal conductivity of the EAG layer near each of the plurality of electrode pairs by independently controlling voltages applied to the plurality of electrode pairs so that a temperature distribution of the first member or the second member becomes a predetermined temperature distribution due to heat exchange between the first member and the second member. (Supplementary Note 14) The processing method of Supplementary Note 13, wherein a temperature-controlled heat transfer fluid flows inside the first member, and the second member exchanges heat with the first member via the EAG sheet and is heated by heat input from the plasma in the processing vessel, and wherein the control unit further performs the following steps: b) generating plasma in the processing vessel, and c) controlling a voltage applied to the electrode pair so as to reduce the thermal conductivity of the EAG sheet while the plasma is being generated in the processing vessel. (Supplementary Note 15) The processing method of Supplementary Note 14, wherein the control unit further performs the following steps: d) controlling a voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet when the temperature of the second member reaches a predetermined temperature. (Supplementary Note 16) The processing method of Supplementary Note 14 or 15, wherein the control unit further performs the following steps: e) controlling a voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet when plasma generation in the processing vessel is completed.

[0090] R Region W Substrate 1 Plasma processing apparatus 10 Plasma processing chamber 10a Side wall 10b Deposit shield 10c Member 10d Support member 10e Gas exhaust port 10f Cooling plate 10g Flow path 10g1 Inlet 10g2 Outlet 10s Plasma processing space 11 Substrate support 111 Main body 111a Central region 111b Annular region 1110 Base 1110a Flow path 1111 Electrostatic chuck 1111a Ceramic member 1111b Electrostatic electrode 112 Ring assembly 13 Shower head 13a Gas supply port 13b Gas diffusion chamber 13c Gas inlet 20 Gas supply unit 21 Gas source 22 Flow rate controller 30 Power source 31 RF power source 31a First RF generation unit 31b Second RF generating unit 32 DC power supply 32a First DC generating unit 32b Second DC generating unit 40 Exhaust system 2 Control unit 2a Computer 2a1 Processing unit 2a2 Storage unit 2a3 Communication interface 50 EAG sheet 51 ER gel 52 Electrode pair 520 Electrode 521 Electrode 53 Substrate 54 Thermally conductive sheet 55 Low thermally conductive member 60 Heater

Claims

1. A processing device comprising: a first member; a second member; an EAG (Electro-Adhesive Gel) sheet disposed between the first member and the second member; and a control unit, wherein the EAG sheet has an EAG layer, a plurality of electrode pairs having two electrodes, and a substrate on which the plurality of electrode pairs are disposed, and the control unit independently controls the thermal conductivity of the EAG layer in the vicinity of each of the plurality of electrode pairs by independently controlling the voltages applied to each of the plurality of electrode pairs so that the temperature distribution of the first member or the second member becomes a predetermined temperature distribution due to heat exchange between the first member and the second member.

2. A processing device as described in claim 1, wherein the electrode pair and the EAG layer are arranged on one side of the substrate, the EAG layer of the EAG sheet is arranged on the first member side, and the substrate is arranged on the second member side.

3. The processing apparatus according to claim 2, wherein a conductive and elastic sheet or adhesive is disposed between the substrate and the second member.

4. The processing device described in claim 1, wherein the electrode pair includes a first electrode pair and a second electrode pair, the EAG layer includes a first EAG layer and a second EAG layer, the first electrode pair and the first EAG layer are arranged on one side of the substrate, the second electrode pair and the second EAG layer are arranged on the other side of the substrate, the first EAG layer is arranged on the first member side, and the second EAG layer is arranged on the second member side.

5. The processing device of claim 1, wherein the substrate includes a first substrate and a second substrate, the EAG layer is disposed between the first substrate and the second substrate, one electrode included in each of the electrode pairs is disposed on the surface of the first substrate facing the EAG layer, and the other electrode included in each of the electrode pairs is disposed on the surface of the second substrate facing the EAG layer.

6. The processing apparatus according to claim 5, wherein the first substrate is disposed on the first member side, the second substrate is disposed on the second member side, and a conductive and elastic sheet or adhesive is disposed between the first substrate and the first member, and between the second substrate and the second member.

7. A processing apparatus according to any one of claims 1 to 6, wherein a temperature-controlled heat transfer fluid flows inside the first member, and the first member exchanges heat with the second member via the EAG sheet.

8. The processing apparatus described in claim 7, further comprising a processing vessel for processing a wafer using plasma generated internally, the second member being heated by heat input from the plasma in the processing vessel, and the control unit controlling the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet is increased when plasma is generated in the processing vessel and the temperature of the second member is equal to or higher than a predetermined first temperature.

9. The processing device described in claim 8, wherein the control unit controls the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet is reduced when the temperature of the second member falls below a second temperature that is lower than the first temperature.

10. The processing apparatus according to claim 8, wherein the control unit controls the voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet when plasma generation in the processing vessel is terminated.

11. The processing device described in claim 8, wherein a heater is embedded inside the second member, and the control unit supplies power to the heater when controlling the voltage applied to the electrode pair so as to reduce the thermal conductivity of the EAG sheet.

12. The processing apparatus according to claim 1, further comprising a showerhead, wherein the first member and the second member are provided around the showerhead.

13. A processing method comprising: a first member, a second member, an EAG (Electro-Adhesive Gel) sheet disposed between the first member and the second member, a processing vessel for processing a wafer using plasma generated inside, and a control unit, wherein the EAG sheet has an EAG layer, a plurality of electrode pairs each having two electrodes, and a substrate on which the plurality of electrode pairs are disposed, and wherein the control unit executes a step of: a) independently controlling the thermal conductivity of the EAG layer in the vicinity of each of the plurality of electrode pairs by independently controlling the voltages applied to each of the plurality of electrode pairs so that the temperature distribution of the first member or the second member becomes a predetermined temperature distribution due to heat exchange between the first member and the second member.

14. The processing method described in claim 13, wherein a temperature-controlled heat transfer fluid flows inside the first member, the second member exchanges heat with the first member via the EAG sheet and is heated by heat input from the plasma in the processing vessel, and the control unit further executes the steps of: b) generating plasma in the processing vessel; and c) controlling the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet is reduced while plasma is being generated in the processing vessel.

15. The processing method according to claim 14, wherein the control unit further executes the step of: d) controlling the voltage applied to the electrode pair so that the thermal conductivity of the EAG sheet is increased when the temperature of the second member reaches a predetermined temperature.

16. The processing method according to claim 14 or 15, wherein the control unit further executes the step of: e) controlling the voltage applied to the electrode pair so as to increase the thermal conductivity of the EAG sheet when plasma generation in the processing vessel is terminated.

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