Surface light emitting element

Abstract

The objective of the present invention is to provide a surface light emitting element in which it is possible to suppress a decrease in productivity and a decrease in reliability.　A surface light emitting element according to the present technology is provided with a light emitting element part that includes: a first structure which includes a first semiconductor structure; a second structure which is superposed on the first structure and includes a second semiconductor structure; a light emitting layer which is disposed between the first and second structures; and a multilayer structure which is provided between a surface of the first structure on the side opposite to the light emitting layer side and a surface of the second structure on the side opposite to the light emitting layer side. The multilayer structure includes an oxidized constriction layer, a first stress relaxation layer which is disposed on the light emitting layer side of the oxidized constriction layer, and a second stress relaxation layer which is disposed on the side of the oxidized constriction layer on the opposite side to the light emitting layer. The first stress relaxation layer includes a first semiconductor region that has a first Al composition, the second stress relaxation layer includes a second semiconductor region that has a second Al composition, and the second Al composition is higher than the first Al composition.

Description

Surface-emitting element

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device.

[0002] 2. Description of the Related Art Conventionally, surface-emitting devices capable of obtaining surface-emitting output, such as surface-emitting lasers and light-emitting diodes, are known.

[0003] Among conventional surface light emitting devices, there are some that have an oxide constriction layer in the light emitting device portion (see, for example, Patent Document 1).

[0004] For example, in Patent Document 1, an oxidation constriction layer is divided into a plurality of sublayers having different thicknesses by at least one oxidation control layer.

[0005] Special table 2018-517301 publication

[0006] However, conventional surface light emitting devices have room for improvement in terms of suppressing decreases in productivity and reliability.

[0007] Therefore, a main object of the present technology is to provide a surface light emitting device that can suppress a decrease in productivity and a decrease in reliability.

[0008] The present technology provides a surface-emitting device comprising: a first structure including a first semiconductor structure, a second structure including a second semiconductor structure stacked on the first structure, a light-emitting layer disposed between the first and second structures, and a laminated structure provided between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side, the laminated structure including: an oxidized constriction layer, a first stress relaxation layer disposed on the light-emitting layer side of the oxidized constriction layer, and a second stress relaxation layer disposed on the light-emitting layer side of the oxidized constriction layer, the first stress relaxation layer including a first semiconductor region having a first Al composition, and the second stress relaxation layer including a second semiconductor region having a second Al composition, the second Al composition being higher than the first Al composition. The oxidized constriction layer may have a non-oxidized portion and an oxidized portion surrounding the non-oxidized portion, the non-oxidized portion having a third Al composition, and the third Al composition being higher than the second Al composition. The second stress relief layer may include an oxidized region surrounding the second semiconductor region. The oxidized region may have a tapered shape that becomes thinner toward the inner circumferential edge. The difference between the second Al composition and the first Al composition may be 0.1 or more. The second Al composition may be 0.4 or more and 0.95 or less. The first Al composition may be 0.3 or more and 0.8 or less. The thickness of the second stress relief layer may be thicker than the thickness of the first stress relief layer. The stacked structure may include a plurality of the first stress relief layers stacked on each other. The first semiconductor regions of the plurality of first stress relief layers may include at least two of the first semiconductor regions having different first Al compositions. The plurality of first stress relief layers may include at least two of the first stress relief layers having different thicknesses. The stacked structure may include a plurality of the second stress relief layers stacked on each other. The second semiconductor regions of the plurality of second stress relief layers may include at least two of the second semiconductor regions having different second Al compositions. The at least two second semiconductor regions may have a higher second Al composition as they are closer to the oxidized constriction layer.The plurality of second stress relief layers may include at least two second stress relief layers having different thicknesses. A plurality of the light-emitting layers may be stacked between the first and second structures. A plurality of the stacked structures may be stacked. A plurality of the light-emitting layers may be stacked. A tunnel junction layer may be disposed between the first and second structures. A defect portion surrounding the stacked structure may be provided on the surface of the light-emitting element portion facing the second structure.

[0009] 6A and 6B are cross-sectional views of each step of an example of a method for manufacturing a surface light-emitting device according to Example 1 of an embodiment of the present technology. FIGS. 7A and 7B are cross-sectional views of each step of an example of a method for manufacturing a surface light-emitting device according to Example 1 of an embodiment of the present technology. FIGS. 8A and 8B are cross-sectional views of each step of an example of a method for manufacturing a surface light-emitting device according to Example 1 of an embodiment of the present technology. FIGS. 8A and 8B are cross-sectional views of each step of an example of a method for manufacturing a surface light-emitting device according to Example 2 of an embodiment of the present technology. FIGS. 8B are cross-sectional views of a surface light-emitting device according to Example 3 of an embodiment of the present technology. FIGS. 8B are cross-sectional views of a surface light-emitting device according to Example 4 of an embodiment of the present technology. FIGS. 8C are cross-sectional views of a surface light-emitting device according to Example 5 of an embodiment of the present technology. FIGS. 8D are cross-sectional views of a surface light-emitting device according to Example 6 of an embodiment of the present technology. FIG. 1 is a cross-sectional view of a surface light emitting device according to Example 7 of an embodiment of the present technology. FIG. 2 is a cross-sectional view of a surface light emitting device according to Example 8 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of a surface light emitting device according to Example 9 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a surface light emitting device according to Example 10 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a surface light emitting device according to Example 11 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of a surface light emitting device according to Example 12 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. FIG. 9 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 16 of an embodiment of the present technology. FIG. 12 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. FIG. 14 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. FIG. 15 is a cross-sectional view (part 1) of a surface light emitting device according to Example 16 of an embodiment of the present technology. FIG. 16 is a cross-sectional view (part 2) of a surface light emitting device according to Example 16 of an embodiment of the present technology. FIG. 16 is a plan view of a surface light emitting device according to Example 16 of an embodiment of the present technology. FIG.FIG. 1 is a cross-sectional view of a surface light emitting device according to Modification 2 of Example 1 of an embodiment of the present technology. FIG. 2 is a cross-sectional view of a surface light emitting device according to Modification 1 of Example 10 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of a surface light emitting device according to Modification 2 of Example 10 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a surface light emitting device according to Modification 1 of Example 11 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a surface light emitting device according to Modification 2 of Example 11 of an embodiment of the present technology. FIG. 6 is a diagram illustrating an example of an application of a surface light emitting device according to Example 1 of an embodiment of the present technology to a distance measurement device. FIG. 7 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. FIG. 8 is an explanatory diagram illustrating an example of an installation position of a distance measurement device.

[0010] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below illustrate typical embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly. Even when it is described in this specification that a surface light emitting device according to the present technology has multiple effects, it is sufficient that the surface light emitting device according to the present technology has at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0011] The description will be made in the following order: 0. Introduction 1. Surface-light-emitting device according to Example 1 of one embodiment of the present technology 2. Surface-light-emitting device according to Example 2 of one embodiment of the present technology 3. Surface-light-emitting device according to Example 3 of one embodiment of the present technology 4. Surface-light-emitting device according to Example 4 of one embodiment of the present technology 5. Surface-light-emitting device according to Example 5 of one embodiment of the present technology 6. Surface-light-emitting device according to Example 6 of one embodiment of the present technology 7. Surface-light-emitting device according to Example 7 of one embodiment of the present technology 8. Surface-light-emitting device according to Example 8 of one embodiment of the present technology 9. Surface-light-emitting device according to Example 9 of one embodiment of the present technology 10. Surface-light-emitting device according to Example 10 of one embodiment of the present technology 11. Surface-light-emitting device according to Example 11 of one embodiment of the present technology 12. Surface-light-emitting device according to Example 12 of one embodiment of the present technology 13. Surface-light-emitting device according to Example 13 of one embodiment of the present technology 14. Surface-light-emitting device according to Example 14 of one embodiment of the present technology 15. Surface-light-emitting device according to Example 15 of one embodiment of the present technology 16. Surface-light-emitting device according to Example 16 of one embodiment of the present technology 17. Surface light emitting device according to Example 17 of an embodiment of the present technology 18. Surface light emitting device according to Example 18 of an embodiment of the present technology 19. Modification of the present technology 20. Application example to electronic devices 21. Example in which the surface light emitting device is applied to a distance measurement device 22. Example in which the distance measurement device is mounted on a moving body

[0012] <0. Introduction>

[0013] Conventionally, in many surface-emitting devices (such as surface-emitting lasers and light-emitting diodes), an oxidation process has been introduced in which a high Al content layer (e.g., an AlAs layer) serving as an oxidizable layer is selectively oxidized to form an oxidized confinement layer in order to form a confinement structure for confining carriers and photons. A side effect of the oxidation process is that other layers, such as a DBR (Distributed Bragg Reflector) layer, may also be oxidized. This may result in problems such as cracks due to stress in the device (especially on the light-emitting layer side). To avoid this, a stress relaxation layer (e.g., an AlAs layer) is provided around the oxidizable layer. ０．９ Measures to alleviate stress have been taken, such as providing layers such as a GaAs, a strain relaxation layer, and a low Al content layer.

[0014] However, in conventional surface-emitting devices, even if such stress relief measures are taken, it is difficult to suppress the decrease in the oxidation rate of the oxidized layer and to suppress the occurrence of defects on the light-emitting layer side. A decrease in the oxidation rate leads to a decrease in productivity, and the occurrence of defects on the light-emitting layer side leads to a decrease in reliability.

[0015] Therefore, after extensive research, the inventors have succeeded in suppressing the decrease in the oxidation rate of the oxidized layer and preventing defects on the light-emitting layer side by providing different profiles to the stress relaxation layers provided on both sides of the oxidized constriction layer in the stacking direction of the surface-emitting device. This is a new discovery by the inventors.

[0016] The inventors then developed a surface light emitting device according to the present technology as a surface light emitting device that embodies this new finding. The surface light emitting device according to the present technology can provide a surface light emitting device that can suppress decreases in productivity and reliability.

[0017] Hereinafter, several examples of an embodiment of a surface light emitting device according to the present technology will be described in detail with reference to the drawings. In the following, in cross-sectional views such as Fig. 1, the upper side will be referred to as "upper" and the lower side will be referred to as "lower" as appropriate.

[0018] 1. Surface light emitting device according to Example 1 of an embodiment of the present technology> Fig. 1 is a cross-sectional view of a surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (top view) of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 2.

[0019] <Configuration of Surface Light Emitting Device> (Overall Configuration) A surface light emitting device 10 according to Example 1 of an embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Figures 1 and 2. The surface light emitting device 10 is, for example, a surface emission type VCSEL.

[0020] The surface light emitting element 10 is driven by, for example, a driver (drive circuit), which includes, for example, a power supply and a transistor that controls the on / off of the power supply to the surface light emitting element 10.

[0021] The surface light emitting element 10 has, as an example, a light emitting element portion LE.

[0022] The light-emitting element unit LE includes, as an example, a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 including a second semiconductor structure SS2 stacked on the first structure ST1, a light-emitting layer 105 arranged between the first and second structures ST1 and ST2, and a stacked structure 107 provided between a surface (bottom surface) of the first structure ST1 opposite to the light-emitting layer 105 side and a surface (top surface) of the second structure ST2 opposite to the light-emitting layer 105 side. Hereinafter, the direction in which the first and second structures ST1 and ST2 are stacked (vertical direction) will also be referred to as the "stacking direction."

[0023] As an example, the first structure ST1 further includes a buffer layer 102 arranged on the opposite side (lower side) of the first semiconductor structure SS1 from the light emitting layer 105 side, and a substrate 101 arranged on the opposite side of the buffer layer 102 from the light emitting layer 105 side.

[0024] The first semiconductor structure SS1 includes, for example, a first semiconductor multilayer reflector 103 and a first cladding layer 104 stacked on top of each other. The first cladding layer 104 is disposed between the first semiconductor multilayer reflector 103 and the light-emitting layer 105.

[0025] The second semiconductor structure SS2 has a different conductivity type from the first semiconductor structure SS1, for example. The second semiconductor structure SS2 includes a second cladding layer 106, a second semiconductor multilayer reflector 108, and a contact layer 109, which are stacked one on top of the other. The second cladding layer 106 is disposed on the opposite side (upper side) of the light emitting layer 105 from the first cladding layer 104. The second semiconductor multilayer reflector 108 is disposed on the opposite side (upper side) of the second cladding layer 106 from the light emitting layer 105. The contact layer 109 is disposed on the opposite side (upper side) of the second semiconductor multilayer reflector 108 from the second cladding layer 106.

[0026] The stacked structure 107 is disposed, for example, within the second structure ST2, specifically within the second semiconductor structure SS2, and more specifically between the second semiconductor multilayer film reflector 108 and the second cladding layer 106. The stacked structure 107 is configured to include, for example, an oxide constriction layer 107a. The oxide constriction layer 107a defines a light emitting region LA of the light emitting layer 105. The light emitting region LA is a region in the light emitting layer 105 into which a current is injected (current injection region) and which emits light.

[0027] As described above, in the surface-emitting device 10, as an example, a buffer layer 102, a first semiconductor multilayer reflector 103, a first cladding layer 104, an emission layer 105, a second cladding layer 106, a stacked structure 107 including an oxide constriction layer 107a, a second semiconductor multilayer reflector 108, and a contact layer 109 are stacked in this order on a substrate 101.

[0028] In the surface-emitting device 10, the light-emitting layer 105 has a double heterostructure in which it is sandwiched in the stacking direction between first and second clad layers 104 and 106 of different conductivity types, and holes and electrons can be radiatively recombined (radiatively recombined) in the light-emitting layer 105.

[0029] In the surface-emitting element 10, a resonator is configured including a light-emitting layer 105 and first and second semiconductor multilayer film reflectors 103 and 108 sandwiching the light-emitting layer 105 in the stacking direction. The surface-emitting element 10 emits laser light to the side of the second structure ST2 opposite to the light-emitting layer 105 side (the surface side (upper surface side) of the substrate 101).

[0030] As an example, a recess surrounding the stacked structure 107 is provided on the surface of the light-emitting element portion LE on the side of the second structure ST2. Here, the recess is a notch or groove that defines a mesa structure MS. The mesa structure MS includes at least a portion (e.g., an upper portion) of the first semiconductor structure SS1, the first cladding layer 104, the light-emitting layer 105, the second cladding layer 106, the stacked structure 107, and the second semiconductor structure SS2. The mesa structure MS is also referred to as a light-emitting mesa. Here, the shape of the light-emitting mesa in a planar view is circular (see FIG. 2 ), but is not limited thereto and may be other shapes such as elliptical or polygonal. The diameter of the light-emitting mesa is, as an example, several tens of μm (e.g., 20 μm to 30 μm).

[0031] A circumferential (e.g., ring-shaped) anode electrode 111 (p-side electrode) is provided on the mesa structure MS (specifically, on the contact layer 109) so as to surround the light emitting region LA of the light emitting layer 105 in plan view. The inner diameter side of the anode electrode 111 serves as an emission aperture.

[0032] As an example, the mesa structure MS and a region of the first semiconductor structure SS1 surrounding the mesa structure MS are covered with an insulating film 110. The insulating film 110 exposes the anode electrode 111. An anode wiring 112 is provided on the insulating film 110 so as to be in contact with the anode electrode 111. The anode wiring 112 is not provided on the insulating film 110 on the inner diameter side of the anode electrode 111.

[0033] As an example, a solid cathode electrode 113 (n-side electrode) is provided on the rear surface (lower surface) of the substrate 101 .

[0034] As an example, the surface light emitting element 10 is mounted on a mounting substrate (for example, a drive substrate having a driver, a wiring substrate connected to the driver, etc.) with the junction facing up.

[0035] (Substrate) The substrate 101 is, for example, a GaAs substrate (for example, an n-GaAs substrate).

[0036] (Buffer Layer) The buffer layer 102 is made of, for example, a non-doped compound semiconductor (e.g., AlGaAs). Depending on the type of substrate 101 and the vertical structure design, the buffer layer 102 may be made of a compound semiconductor (e.g., n-AlGaAs) doped with n-type impurities (e.g., Si) or a compound semiconductor (e.g., p-AlGaAs) doped with p-type impurities (e.g., C, Zn).

[0037] (First Semiconductor Multilayer Reflector) The first semiconductor multilayer reflector 103 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with n-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The first semiconductor multilayer reflector 103 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of the light-emitting layer 105. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers be as large as possible. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of n-type impurities (n-type dopants) in the first semiconductor multilayer film reflector 103 include Si, Se, and Ge. The first semiconductor multilayer film reflector 103 is set to have a slightly higher reflectivity than the second semiconductor multilayer film reflector 108.

[0038] (First Cladding Layer) The first cladding layer 104 is made of n-AlGaAs, for example. The "cladding layer" is also called a "spacer layer."

[0039] (Light-Emitting Layer) The light-emitting layer 105 is made of, for example, a compound semiconductor having a smaller band gap energy than the first and second cladding layers 104 and 106. The light-emitting layer 105 is made of, for example, a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The light-emitting layer 105 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The light-emitting layer 105 has an emission wavelength set to, for example, about 600 to 1100 nm. The light-emitting layer 105 is also called an "active layer." The light-emitting layer 105 is preferably disposed at or near an antinode of a standing wave generated in the resonator.

[0040] (Second Cladding Layer) The second cladding layer 106 is made of p-AlGaAs, for example. The "cladding layer" is also called a "spacer layer."

[0041] (Second Semiconductor Multilayer Reflector) The second semiconductor multilayer reflector 108 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with p-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The second semiconductor multilayer reflector 108 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of the light-emitting layer 105. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers is large. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of p-type impurities (p-type dopants) in the second semiconductor multilayer film reflector 108 include Zn, Mg, Be, and C.

[0042] (Contact Layer) The contact layer 109 is, for example, a highly doped layer (e.g., a p-GaAs layer) that has high carrier conductivity and is doped with a high concentration of p-type impurities (p-type dopants), such as Zn, Mg, Be, and C.

[0043] (Insulating Film) The insulating film 110 is made of, for example, SiN or SiO ２ The insulating layer is made of a dielectric material such as SiON.

[0044] (Anode Electrode) The anode electrode 111 may have a single-layer structure or a laminated structure. The anode electrode 111 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode electrode 111 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd. The anode electrode 111 is electrically connected to the anode side of the driver.

[0045] (Anode Wiring) The anode wiring 112 is made of plating containing, for example, Au, Ag, Cu, or the like.

[0046] (Cathode Electrode) The cathode electrode 113 may have a single-layer structure or a laminated structure. The cathode electrode 113 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the cathode electrode 113 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like. The cathode electrode 113 is electrically connected to the cathode side of the driver.

[0047] (Stacked Structure) The stacked structure 107 includes, for example, an oxidized constriction layer 107a, as well as first and second stress relaxation layers 107b and 107c. The first stress relaxation layer 107b is disposed on the oxidized constriction layer 107a on the light-emitting layer 105 side (lower side). The second stress relaxation layer 107c is disposed on the opposite side (upper side) of the oxidized constriction layer 107a from the light-emitting layer 105 side.

[0048] The first stress relief layer 107b includes, for example, a first semiconductor region having a first Al composition. Here, the first stress relief layer 107b is substantially entirely made of the first semiconductor region. The first semiconductor region functions to relieve stress caused by oxide generation during the oxidation process for forming the oxidized constriction layer 107a, and also to suppress excess oxidation toward the light-emitting layer 105 during the oxidation process. The first semiconductor region is made of, for example, AlGaAs. For example, the first Al composition of the first semiconductor region is preferably 0.3 or more and 0.8 or less.

[0049] The second stress relief layer 107c includes, for example, a second semiconductor region 107c1 having a second Al composition. The second semiconductor region 107c1 functions to relieve stress caused by oxide generation during the oxidation process for forming the oxidized constriction layer 107a and to suppress a decrease in the oxidation rate during the oxidation process. The second semiconductor region 107c1 is made of, for example, AlGaAs. For example, the second Al composition of the second semiconductor region 107c1 is preferably 0.4 or more and 0.95 or less. The second Al composition is preferably higher than the first Al composition of the first semiconductor region. In this case, the difference between the second Al composition and the first Al composition is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more. Here, the thickness of the second stress relief layer 107c is set to be the same as the thickness of the first stress relief layer 107b.

[0050] For example, the second stress relief layer 107c further includes an oxidized region 107c2 (insulating region) surrounding the second semiconductor region 107c1. For example, the oxidized region 107c2 has a circular shape (e.g., ring-shaped) in a planar view, and a tapered shape in which the thickness of the longitudinal cross section (cross section parallel to the stacking direction) decreases toward the inner circumferential end (the innermost end). The oxidized region 107c2 has a tapered upper surface (an inclined or curved surface inclined relative to the stacking direction) and a flat lower surface (a plane substantially perpendicular to the stacking direction). The oxidized region 107c2, together with the oxidized portion 107a2 of the oxidized constriction layer 107a (described later), forms an oxidized structure (oxidized constriction structure; the same applies hereinafter) and contributes to maintaining the thickness of the oxidized structure at or above a desired thickness throughout the entire radial direction. This contributes to stabilization of the transverse mode. The second stress relief layer 107c is preferably positioned at or near a node of a standing wave generated within the resonator.

[0051] The oxidized region 107c2 has the tapered shape, and therefore functions as a current guide that confines the current flowing from the anode electrode 111 and passing through the second semiconductor multilayer film reflector 108, and guides it to the non-oxidized portion 107a1 of the oxidized constriction layer 107a, which will be described later. The oxidized region 107c2 is, for example, an oxide containing Al (e.g., Al ｘ O ｙ etc.)

[0052] For example, the oxidized constriction layer 107a includes a non-oxidized portion 107a1 and an oxidized portion 107a2 (insulating region) surrounding the non-oxidized portion 107a1. The oxidized constriction layer 107a is preferably disposed at or near a node of a standing wave generated in the resonator. The thickness of the oxidized constriction layer 107a may be the same as or different from the thicknesses of the first and second stress relaxation layers 107b and 107c.

[0053] The non-oxidized portion 107a1 corresponds to the light-emitting region LA and functions as a current / light passage portion. The non-oxidized portion 107a1 is located at a position corresponding to the center of each of the first semiconductor region of the first stress relaxation layer 107b and the second semiconductor region 107c1 of the second stress relaxation layer 107c. The non-oxidized portion 107a1 includes, for example, an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The non-oxidized portion 107a1 has a third Al composition. The third Al layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The third Al composition is preferably higher than the second Al composition of the second semiconductor region 107c1.

[0054] The oxidized portion 107a2 is, for example, a region that is circular (for example, ring-shaped) in plan view and surrounds the non-oxidized portion 107a1. The oxidized portion 107a2 is located at a position corresponding to the oxidized region 107c2 of the second stress relaxation layer 107c. The oxidized portion 107a2 is a region that has a higher resistance and a lower refractive index than the non-oxidized portion 107a1, and functions as a current / light confinement region. For example, the oxidized portion 107a2 is made of an oxide containing Al (for example, Al ｘ O ｙ The oxidized portion 107a2 and the oxidized region 107c2 are substantially integral and form a single oxidized structure.

[0055] <Operation of Surface-Emitting Element> The operation of the surface-emitting element 10 will now be described. When a power supply voltage of the driver is applied between the anode electrode 111 and the cathode electrode 113, a current flows from the anode side of the driver to the light-emitting element unit LE via the anode electrode 111. The current flowing into the light-emitting element unit LE passes through the contact layer 109 and the second semiconductor multilayer film reflector 108 in this order, is guided by the second stress relaxation layer 107c, is constricted by the oxide constriction layer 107a, and is injected into the light-emitting region LA of the light-emitting layer 105 via the second cladding layer 106. At this time, the light-emitting region LA emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 103 and 108 while being constricted by the oxide constriction layer 107a and amplified by the light-emitting layer 105. When the oscillation conditions are satisfied, the light is emitted as laser light from the surface (top surface) of the light-emitting element unit LE. The current injected into the light-emitting area LA flows out to the cathode side of the driver via the first cladding layer 104, the first semiconductor multilayer reflector 103, the buffer layer 102, the substrate 101 and the cathode electrode 113 in this order.

[0056] <<Method for Manufacturing Surface Light Emitting Device>> An example of a method for manufacturing the surface light emitting device 10 will be described below with reference to the flowchart in Fig. 3. As an overall flow, first, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface light emitting devices 10 on a single wafer (hereinafter referred to as "substrate 101" for convenience) that is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0057] In the first step S1, a stacked structure is produced (see FIG. 4A ). Specifically, a buffer layer 102, a first semiconductor multilayer reflector 103, a first cladding layer 104, a light-emitting layer 105, a second cladding layer 106, a first semiconductor layer 107bS (e.g., an AlGaAs layer), an oxidized layer 107aS (e.g., AlGaAs, AlAs, etc.), a second semiconductor layer 107cS (e.g., an AlGaAs layer), a second semiconductor multilayer reflector 108, and a contact layer 109 are stacked in this order on a substrate 101 serving as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). The first semiconductor layer 107bS is a layer that will become the material of the first stress relief layer 107b. The oxidized layer 107aS is a layer that will be the material of the oxidized constriction layer 107a. The second semiconductor layer 107cS is a layer that will be the material of the second stress relaxation layer 107c. When producing the stacked body, the compound semiconductor raw materials include, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH ３ ) gas is used, and the source of the donor impurity is, for example, disilane (Si ２ H ６ ) is used, and the raw material of the acceptor impurity is, for example, carbon tetrabromide (CBr ４ ) is used.

[0058] In the next step S2, the mesa M is formed. Specifically, first, a resist pattern RP for forming the mesa M is formed on the stacked body by photolithography (see FIG. 4B). Next, the stacked body is etched by, for example, dry etching using the resist pattern RP as a mask (see FIG. 5A). This etching is continued until at least the side surface of the oxidized layer 107aS is exposed (for example, until the etched bottom surface is positioned within the first semiconductor multilayer film reflector 103). As a result, the mesa M is formed. Thereafter, the resist pattern RP is removed (see FIG. 5B).

[0059] In the next step S3, the oxidized constriction layer 107a is formed (see FIG. 6A). Specifically, the mesa M formed in the stacked structure is exposed to a high-temperature water vapor atmosphere to selectively oxidize the oxidized layer 107aS and the second semiconductor layer 107cS (see FIG. 5B) from their sides. The oxidation is performed under oxidation conditions and for an oxidation time such that the oxidized layer 107aS, which has the highest Al composition in the stacked structure 107, is oxidized a predetermined distance, while the first semiconductor layer 107bS, which has the lowest Al composition, is hardly or not oxidized at all. This predetermined distance is a distance that allows the oxidized constriction layer 107a to achieve a desired oxidized constriction diameter (the inner diameter of the oxidized portion 107a2). The oxidized layer 107aS and the second semiconductor layer 107cS, which are adjacent to each other, are oxidized at oxidation rates corresponding to their respective Al compositions. However, the oxidation cross-section is substantially larger than that of the oxidized layer 107aS alone, thereby suppressing a decrease in the oxidation rate of the oxidized layer 107aS. Ultimately, the oxidized layer 107aS, which has a relatively high Al composition, is oxidized substantially uniformly in the thickness direction from the oxidation start point (outer peripheral edge) to the oxidation end point (inner peripheral edge), while the oxidation of the second semiconductor layer 107cS, which has a relatively low Al composition, tapers off in the thickness direction from the oxidation start point (outer peripheral edge) to the oxidation end point (inner peripheral edge). This is because the oxidation rate of the second semiconductor layer 107cS is substantially higher in the region closer to the oxidized layer 107aS due to the high oxidation rate of the oxidized layer 107aS. The presence of the second semiconductor layer 107cS, which has a relatively high Al composition, adjacent to the oxidized layer 107aS also suppresses a decrease in the oxidation rate. As a result, an oxidized structure including the oxidized portion 107a2 and the oxidized region 107c2 shown in FIG. 6A is formed.

[0060] In the next step S4, the anode electrode 111 is formed (see FIG. 6B ). Specifically, the anode electrode 111 is formed in a circumferential shape (e.g., a ring shape) on the contact layer 109 of the light-emitting element portion LE so as to surround the light-emitting region in a plan view, for example, by a lift-off method. At this time, deposition, sputtering, or the like is used to form a film of the electrode material.

[0061] In the next step S5, the insulating film 110 is formed. Specifically, first, the insulating film 110 is formed on the entire surface (see FIG. 7A). Next, the insulating film 110 on the anode electrode 111 is removed by photolithography and etching to expose the anode electrode 111 (see FIG. 7B).

[0062] In the next step S6, the anode wiring 112 is formed (see FIG. 8A). Specifically, the anode wiring 112 is formed by, for example, plating so as to be in contact with the anode electrode 111 and to expose the insulating film 110 on the inner diameter side of the anode electrode 111. Prior to plating, it is preferable to form a seed layer in advance in the area to be plated.

[0063] In the final step S7, the cathode electrode 113 is formed (see FIG. 8B ). Specifically, the rear surface (lower surface) of the substrate 101 is polished to an overall thickness of about 100 μm, and then the cathode electrode 113 is formed solidly on the rear surface (lower surface) of the substrate 101. At this time, the electrode material is deposited by, for example, vapor deposition, sputtering, or the like.

[0064] <Effects of the Surface Light Emitting Element and the Method for Manufacturing the Surface Light Emitting Element> The effects of the surface light emitting element 10 will be described below.

[0065] The surface light emitting device 10 comprises a light emitting element section LE including a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 including a second semiconductor structure SS2 stacked on the first structure ST1, a light emitting layer 105 arranged between the first and second structures ST1 and ST2, and a laminated structure 107 provided between the surface of the first structure ST1 opposite to the light emitting layer 105 side and the surface of the second structure ST2 opposite to the light emitting layer 105 side. The stacked structure 107 includes an oxidized constriction layer 107a, a first stress relaxation layer 107b arranged on the light emitting layer 105 side of the oxidized constriction layer 107a, and a second stress relaxation layer 107c arranged on the opposite side of the oxidized constriction layer 107a from the light emitting layer 105 side, the first stress relaxation layer 107b including a first semiconductor region having a first Al composition, the second stress relaxation layer 107c including a second semiconductor region 107c1 having a second Al composition, the second Al composition being higher than the first Al composition.

[0066] In the surface-emitting device 10, the second Al composition is higher than the first Al composition, which suppresses a decrease in the oxidation rate of the oxidized layer 107aS, which is the material of the oxidized constriction layer 107a, and also suppresses the progression of oxidation toward the light-emitting layer 105. Suppressing a decrease in the oxidation rate leads to a shortened oxidation time and suppresses excess oxidation. Suppressing the progression of oxidation toward the light-emitting layer 105 suppresses the diffusion of oxidized impurities into the light-emitting layer 105 and the generation of stress on the light-emitting layer 105 side. The diffusion of oxidized impurities also causes increased light absorption.

[0067] As a result, the surface light emitting device 10 can provide a surface light emitting device that can suppress a decrease in productivity and a decrease in reliability.

[0068] On the other hand, if the Al composition of the stress relaxation layers on both sides of the oxidized constriction layer 107a in the stacking direction is made equally high, it is possible to suppress a decrease in the oxidation rate of the oxidized layer 107aS, but it is not possible to suppress the progression of oxidation toward the light-emitting layer 105. Furthermore, if the Al composition of the stress relaxation layers on both sides of the oxidized constriction layer 107a is made equally low, it is possible to suppress the progression of oxidation toward the light-emitting layer 105, but it is not possible to suppress a decrease in the oxidation rate of the oxidized layer 107aS.

[0069] Furthermore, for example, in Patent Document 1, the oxidation constriction layer is separated into multiple sublayers of different thicknesses by at least one oxidation control layer, but it is difficult to simultaneously suppress a decrease in the oxidation rate and suppress the progression of oxidation toward the light-emitting layer 105, and it is also difficult to suppress a decrease in productivity and a decrease in reliability.

[0070] The oxidized constriction layer 107a has a non-oxidized portion 107a1 and an oxidized portion 107a2 surrounding the non-oxidized portion 107a1, and the non-oxidized portion 107a1 has a third Al composition that is higher than the second Al composition, thereby achieving a desired oxidized constriction diameter in the oxidized constriction layer 107a and providing the second stress relaxation layer 107c with a stress relaxation function.

[0071] The second stress relaxation layer 107c includes an oxidized region 107c2 surrounding the second semiconductor region 107c1. In this case, the oxidized region 107c2 functions as a current guide, allowing current to flow efficiently to the non-oxidized portion 107a1.

[0072] The oxidized region 107c2 has a tapered cross section that becomes thinner toward the inner circumferential edge, thereby providing the second stress relief layer 107c with a stress relief function and substantially increasing the thickness of the oxidized portion of the oxidized constriction layer 107a, thereby stabilizing the transverse mode.

[0073] The difference between the second Al composition and the first Al composition is preferably 0.1 or more, which more reliably prevents a decrease in productivity and a decrease in reliability.

[0074] The second Al composition is 0.4 to 0.95, which allows the second stress relaxation layer 107c to have at least some stress relaxation function and some function of suppressing a decrease in the oxidation rate of the oxidation constriction layer 107a.

[0075] The first Al composition is 0.3 or more and 0.8 or less. This allows the first stress relaxation layer 107b to have the necessary stress relaxation function while still having the function of suppressing a decrease in the oxidation rate of the oxidized constriction layer 107a to a certain extent. If the first Al composition is less than 0.3, the decrease in the oxidation rate of the oxidized constriction layer 107a cannot be suppressed, and the oxidation time becomes longer. As a result, the amount of oxidation on the DBR side of the light-emitting mesa increases, increasing mesa stress, and there is a concern that mesa cracks may occur or reliability may decrease.

[0076] 2. Surface Light Emitting Device According to Example 2 of an Embodiment of the Present Technology FIG. 9 is a cross-sectional view of a surface light emitting device 20 according to Example 2 of an embodiment of the present technology.

[0077] As shown in Figure 9, the surface light emitting device 20 has the same configuration as the surface light emitting device 10 of Example 1, except that the thickness of the second stress relaxation layer 107c is thicker than the thickness of the first stress relaxation layer 107b.

[0078] According to the surface-emitting device 20, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and by making the first stress relaxation layer 107b relatively thick, the decrease in the oxidation rate of the oxidized constriction layer 107a can be further suppressed.

[0079] 3. Surface Light Emitting Device According to Example 3 of an Embodiment of the Present Technology FIG. 10 is a cross-sectional view of a surface light emitting device 30 according to Example 3 of an embodiment of the present technology.

[0080] As shown in Figure 10, the surface-emitting device 30 has a configuration similar to that of the surface-emitting device 10 of Example 1, except that the laminated structure 107 includes multiple (e.g., two) first stress relaxation layers 107b, 107d stacked on top of each other and multiple (e.g., two) second stress relaxation layers 107c, 107e stacked on top of each other.

[0081] The first semiconductor regions of the plurality of first stress relaxation layers 107b, 107d may have different Al compositions (first Al compositions) from each other or may have the same Al composition.

[0082] The second semiconductor regions 107c1, 107e1 of the second stress relief layers 107c, 107e may have different Al compositions (second Al compositions). In this case, it is preferable that the Al composition of the second semiconductor region of the second stress relief layers 107c, 107e is higher the closer they are to the oxidized constricting layer 107a. That is, it is preferable that the Al composition of the second semiconductor region 107c1 of the second stress relief layer 107c that is relatively closer to the oxidized constricting layer 107a is higher than the Al composition of the second semiconductor region 107e1 of the second stress relief layer 107e that is relatively farther from the oxidized constricting layer 107a. This effectively prevents a decrease in the oxidation rate of the oxidized layer 107aS, which is the material of the oxidized constriction layer 107a1, while allowing the shape of the oxidized structure, which is a combination of the oxidized portion 107a2 of the oxidized constriction layer 107a and the oxidized regions 107c2, 107e2 of the plurality of second stress relaxation layers 107c, 107e, to be properly shaped. Note that the second semiconductor regions 107c1, 107e1 may have the same Al composition.

[0083] According to the surface-emitting device 30, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since there are multiple first and second stress relaxation layers, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be significantly improved, and ultimately the degree of freedom in designing the oxidation structure can be significantly improved.

[0084] At least one of the first and second stress relief layers may be provided in three or more pieces. When three or more first stress relief layers are provided, the three or more first stress relief layers may include at least two first stress relief layers having the same Al composition, or may include at least two first stress relief layers having different Al compositions. When three or more second stress relief layers are provided, the three or more second stress relief layers may include at least two second stress relief layers having the same Al composition, or may include at least two second stress relief layers having different Al compositions.

[0085] 4. Surface Light Emitting Device According to Example 4 of an Embodiment of the Present Technology FIG. 11 is a cross-sectional view of a surface light emitting device 40 according to Example 4 of an embodiment of the present technology.

[0086] As shown in FIG. 11, the surface light emitting device 40 has the same configuration as the surface light emitting device 30 of Example 3, except that the thicknesses of the multiple (e.g., two) first stress relaxation layers 107b, 107d are different from each other.

[0087] Here, the thickness of the first stress relaxation layer 107b, which is relatively closer to the oxidized constriction layer 107a, is thicker than the thickness of the first stress relaxation layer 107d, which is relatively farther from the oxidized constriction layer 107a, but the thickness of the first stress relaxation layer 107d may also be thicker than the thickness of the first stress relaxation layer 107b.

[0088] According to the surface-emitting device 40, the same effect as that of the surface-emitting device 30 of Example 3 can be obtained, and since the thicknesses of the multiple first stress relaxation layers are different from each other, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be further improved, and ultimately the degree of freedom in designing the oxidation structure can be further improved.

[0089] The first stress relaxation layers 107b and 107d may have the same thickness. Three or more first stress relaxation layers may be provided. When three or more first stress relaxation layers are provided, the three or more first stress relaxation layers may include at least two first stress relaxation layers having the same thickness, or may include at least two first stress relaxation layers having different thicknesses.

[0090] 5. Surface Light Emitting Device According to Example 5 of an Embodiment of the Present Technology FIG. 12 is a cross-sectional view of a surface light emitting device 50 according to Example 5 of an embodiment of the present technology.

[0091] As shown in FIG. 12, the surface light emitting device 50 has the same configuration as the surface light emitting device 30 of Example 3, except that the thicknesses of the multiple (e.g., two) second stress relaxation layers 107c, 107e are different from each other.

[0092] Here, the thickness of the second stress relaxation layer 107c, which is relatively closer to the oxidized constriction layer 107a, is thicker than the thickness of the second stress relaxation layer 107e, which is relatively farther from the oxidized constriction layer 107a, but the thickness of the second stress relaxation layer 107e may also be thicker than the thickness of the second stress relaxation layer 107c.

[0093] According to the surface-emitting device 50, the same effect as that of the surface-emitting device 30 of Example 3 can be obtained, and since the thicknesses of the multiple second stress relaxation layers are different from each other, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be further improved, and ultimately the degree of freedom in designing the oxidation structure can be further improved.

[0094] The second stress relief layers 107c and 107e may have the same thickness. Three or more second stress relief layers may be provided. When three or more second stress relief layers are provided, the three or more second stress relief layers may include at least two second stress relief layers having the same thickness, or may include at least two second stress relief layers having different thicknesses.

[0095] 6. Surface Light Emitting Device According to Example 6 of an Embodiment of the Present Technology FIG. 13 is a cross-sectional view of a surface light emitting device 60 according to Example 6 of an embodiment of the present technology.

[0096] As shown in FIG. 13, the surface light emitting device 60 has the same configuration as the surface light emitting device 30 according to Example 3, except that the laminated structure 107 does not include the second stress relaxation layer 107e.

[0097] According to the surface-emitting device 60, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since there are multiple first stress relaxation layers, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be improved, and ultimately the degree of freedom in designing the oxidation structure can be improved.

[0098] 7. Surface Light Emitting Device According to Example 7 of an Embodiment of the Present Technology FIG. 14 is a cross-sectional view of a surface light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0099] As shown in FIG. 14, the surface light emitting device 70 has the same configuration as the surface light emitting device 30 according to Example 3, except that the laminated structure 107 does not include the first stress relaxation layer 107d.

[0100] The surface-emitting device 70 can achieve the same effects as the surface-emitting device 10 of Example 1, and since there are multiple second stress relaxation layers, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be improved, and ultimately the degree of freedom in designing the oxidation structure can be improved.

[0101] 8. Surface Light Emitting Device According to Example 8 of an Embodiment of the Present Technology FIG. 15 is a cross-sectional view of a surface light emitting device 80 according to Example 8 of an embodiment of the present technology.

[0102] As shown in FIG. 15 , the surface-emitting device 80 has a configuration similar to that of the surface-emitting device 10 of Example 1, except that the stacked structure 107 is arranged within the first structure ST1, for example, between the first semiconductor multilayer film reflector 103 and the first cladding layer 104.

[0103] In the surface-emitting device 80, a second stress relaxation layer 107c is arranged between the first semiconductor multilayer reflector 103 and the oxide constriction layer 107a, and a first stress relaxation layer 107b is arranged between the oxide constriction layer 107a and the first cladding layer 104.

[0104] According to the surface light emitting device 80, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained.

[0105] 9. Surface Light Emitting Device According to Example 9 of an Embodiment of the Present Technology FIG. 16 is a cross-sectional view of a surface light emitting device 90 according to Example 9 of an embodiment of the present technology.

[0106] As shown in Figure 16, the surface-emitting element 90 has a configuration generally similar to that of the surface-emitting element 10 of Example 1 and the surface-emitting element 80 of Example 8, except that the laminated structure 107 is arranged both within the first structure ST1 and within the second structure ST2.

[0107] In the surface light emitting device 90 , the stacked structure 107 is disposed, for example, between the first semiconductor multilayer reflector 103 and the first cladding layer 104 and between the second cladding layer 106 and the second semiconductor multilayer reflector 108 .

[0108] According to the surface-emitting device 90, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since the stacked structure 107 is arranged on both sides of the light-emitting layer 105, the efficiency of current injection into the light-emitting layer 105 can be further improved, and therefore the light-emitting efficiency can be further improved.

[0109] 10. Surface Light Emitting Device According to Example 10 of an Embodiment of the Present Technology FIG. 17 is a cross-sectional view of a surface light emitting device 100 according to Example 10 of an embodiment of the present technology.

[0110] As shown in FIG. 17, the surface light emitting device 100 has the same configuration as the surface light emitting device 10 according to the first embodiment, except that it has a multi-junction structure including a plurality of (for example, two) light emitting layers 105 .

[0111] In the surface-emitting device 100, two structures, each having a light-emitting layer 105 and first and second clad layers 104, 106 sandwiching the light-emitting layer 105, are stacked via a tunnel junction layer 114 between the first semiconductor multilayer film reflector 103 and the stacked structure 107. The action of the tunnel junction layer 114 allows currents of approximately the same magnitude to flow through the two light-emitting layers 105. Note that three or more such structures may be stacked, and the tunnel junction layer 114 may be disposed between adjacent structures.

[0112] The tunnel junction layer 114 includes a p-type semiconductor region and an n-type semiconductor region stacked on top of each other. Here, the p-type semiconductor region is disposed on the substrate 101 side (below) of the n-type semiconductor region. The p-type semiconductor region is, for example, a highly doped p-type layer (e.g., a p-GaAs layer, a p-InGaAs layer, etc.) doped with a high concentration of p-type impurities. The n-type semiconductor region is, for example, a highly doped n-type layer (e.g., an n-GaAs layer, an n-InGaAs layer, etc.) doped with a high concentration of n-type impurities.

[0113] According to the surface light emitting device 100, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and since it has a multi-junction structure, it is possible to achieve high output.

[0114] 11. Surface Light Emitting Element According to Example 11 of an Embodiment of the Present Technology FIG. 18 is a cross-sectional view of a surface light emitting element 115 according to Example 11 of an embodiment of the present technology.

[0115] As shown in Figure 18, the surface-emitting device 115 has a configuration generally similar to that of the surface-emitting device 90 of Example 9 and the surface-emitting device 100 of Example 10, except that it has a multi-junction structure including multiple (e.g., two) light-emitting layers 105 and multiple stacked structures 107.

[0116] In the surface light emitting device 115, two structures each having a light emitting layer 105 and first and second clad layers 104 and 106 sandwiching the light emitting layer 105 are stacked between two stacked structures 107 stacked on each other between the first and second semiconductor multilayer film reflectors 103 and 108, with a tunnel junction layer 114 interposed therebetween. Note that three or more such structures may be stacked, and the tunnel junction layer 114 may be disposed between adjacent such structures.

[0117] According to the surface light emitting device 115, the effects of both the surface light emitting device 90 according to the ninth embodiment and the surface light emitting device 115 according to the tenth embodiment can be obtained.

[0118] 12. Surface Light Emitting Device According to Example 12 of an Embodiment of the Present Technology FIG. 19 is a cross-sectional view of a surface light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0119] As shown in FIG. 19, the surface light emitting device 120 has the same configuration as the surface light emitting device 10 according to the first embodiment, except that an ion implantation region IIA is provided in the light emitting device portion LE.

[0120] The ion implantation region IIA is provided in a circular shape around the periphery of the mesa structure MS so as to surround the light-emitting region of the light-emitting layer 105 in a planar view. The ion implantation region IIA has a current blocking function. The inner diameter of the ion implantation region IIA is larger than the inner diameter (oxidation constriction diameter) of the oxidized portion 107a2. Here, the ion implantation region IIA is provided across the contact layer 109, the second semiconductor multilayer film reflector 108, the stacked structure 107, the second cladding layer 106, the light-emitting layer 105, the first cladding layer 104, and the first semiconductor multilayer film reflector 103, but it is sufficient that the ion implantation region IIA is provided at least in the contact layer 109 and the second semiconductor multilayer film reflector 108.

[0121] According to the surface light emitting device 120, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and the ion implantation region IIA can increase the efficiency of current injection into the light emitting layer 105.

[0122] 13. Surface Light Emitting Device According to Example 13 of an Embodiment of the Present Technology FIG. 20 is a cross-sectional view of a surface light emitting device 130 according to Example 13 of an embodiment of the present technology.

[0123] As shown in FIG. 20, the surface light emitting element 130 has the same configuration as the surface light emitting element 10 according to the first embodiment, except that it is a surface emitting laser of a back-side emission type.

[0124] In the surface light emitting element 130, a solid anode electrode 111 is provided on the mesa structure MS (more specifically, on the contact layer 109), and an anode wiring 112 is provided to cover the mesa structure MS and the anode electrode 111. A circumferential (e.g., ring-shaped) cathode electrode 113 is provided on the back surface (lower surface) of the substrate 101 so as to surround the light emitting region of the light emitting layer 105 in plan view. The inner diameter side of the cathode electrode 113 serves as an emission aperture. Here, the reflectivity of the second semiconductor multilayer film reflector 108 is set slightly higher than the reflectivity of the first semiconductor multilayer film reflector 103.

[0125] According to the surface light emitting device 130, it is possible to provide a back-emitting surface emitting laser that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0126] 14. Surface Light Emitting Device According to Example 14 of an Embodiment of the Present Technology FIG. 21 is a cross-sectional view of a surface light emitting device 140 according to Example 14 of an embodiment of the present technology.

[0127] As shown in FIG. 21, the surface light emitting device 140 has a configuration generally similar to that of the surface light emitting device 130 according to Example 13, except that it has an intra-cavity structure.

[0128] In the surface light emitting device 140, a circumferential cathode electrode 113 is provided so as to surround the mesa structure MS on the peripheral region of the mesa structure MS on the upper surface of the first semiconductor multilayer film reflector 103. The surface light emitting device 140 does not have an anode wiring 112.

[0129] The surface light emitting element 140 is suitable for mounting, for example, junction down (flip chip).

[0130] The surface-emitting device 140 can provide a back-emitting surface-emitting laser that has the same effects as the surface-emitting device 10 according to the first embodiment and can reduce the series resistance.

[0131] 15. Surface Light Emitting Device According to Example 15 of an Embodiment of the Present Technology FIG. 22 is a cross-sectional view of a surface light emitting device 150 according to Example 15 of an embodiment of the present technology.

[0132] 22, the surface light emitting device 150 has a configuration generally similar to that of the surface light emitting device 10 according to Example 1, except that it has an intra-cavity structure. The surface light emitting device 150 does not have an anode wiring 112.

[0133] According to the surface light emitting device 150, it is possible to provide a surface emission type surface emitting laser that can achieve the same effects as the surface light emitting device 10 according to the first embodiment and can reduce the series resistance.

[0134] 16. Surface light emitting device according to Example 16 of an embodiment of the present technology> Fig. 23 is a cross-sectional view (part 1) of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 24 is a cross-sectional view (part 2) of the surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 25 is a plan view of the surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 23 is a cross-sectional view taken along line 23-23 in Fig. 25. Fig. 24 is a cross-sectional view taken along line 24-24 in Fig. 25.

[0135] As shown in FIGS. 23 to 25, the surface light emitting device 160 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that it has a mesare-less structure.

[0136] In the surface light emitting element 160, multiple (e.g., eight) trenches TR (grooves) are provided on the surface of the light emitting element portion LE facing the second structure ST2 as recesses surrounding the stacked structure 107. The multiple trenches TR are arranged at approximately equal intervals in a plan view so as to surround the non-oxidized portion 107a1 of the oxidized constriction layer 107a (see FIG. 25). Each trench TR is a groove for exposing the side surface of the material of the stacked structure 107 when generating the stacked structure 107 through an oxidation process. The bottom surface of each trench TR is located at least closer to the substrate 101 (e.g., within the first semiconductor multilayer film reflector 103) than the oxidized constriction layer 107a (see FIG. 23). Portions of an insulating film 110 are provided along two opposing side surfaces of the trenches TR. The number, width, depth, shape, etc. of the trenches TR can be changed as appropriate.

[0137] According to the surface light emitting device 160, it is possible to provide a surface emitting surface emitting laser with a mesare-less structure that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0138] It should be noted that a surface-emitting laser of a back-side emission type having a mesare-less structure, which has a configuration generally similar to that of the surface-emitting element 160, can also be realized.

[0139] 17. Surface Light Emitting Device According to Example 17 of an Embodiment of the Present Technology FIG. 26 is a cross-sectional view of a surface light emitting device 170 according to Example 17 of an embodiment of the present technology.

[0140] As shown in FIG. 26, the surface light emitting element 170 has the same configuration as the surface light emitting element 10 according to the first embodiment, except that it is a surface-emitting light emitting diode (LED).

[0141] The surface light emitting device 170 does not have the second semiconductor multilayer film reflector 108 .

[0142] In the surface-emitting element 170, the light emitted downward from the light-emitting layer 105 and reflected upward by the first semiconductor multilayer film reflector 103 and the light emitted upward from the light-emitting layer 105 are combined and emitted from the emission port on the inner diameter side of the anode electrode 111.

[0143] According to the surface light emitting device 170, it is possible to provide a surface emission type high output LED that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0144] 18. Surface Light Emitting Device According to Example 18 of an Embodiment of the Present Technology FIG. 27 is a cross-sectional view of a surface light emitting device 180 according to Example 18 of an embodiment of the present technology.

[0145] As shown in FIG. 27, the surface light emitting element 180 has the same configuration as the surface light emitting element 10 according to the first embodiment, except that it is a surface-emitting light emitting diode (LED).

[0146] The surface light emitting device 180 does not have the first and second semiconductor multilayer film reflectors 103 and 108 .

[0147] In the surface light emitting element 180, the light emitted downward from the light emitting layer 105 and reflected upward by the cathode electrode 113 and the light emitted upward from the light emitting layer 105 are combined and emitted from the emission opening on the inner diameter side of the anode electrode 111.

[0148] According to the surface light emitting device 180, it is possible to provide a surface emission type LED that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0149] 19. Modifications of the Present Technology The present technology is not limited to the examples of the above-described embodiment, and can be modified as appropriate.

[0150] For example, as in the surface light emitting device 10-1 according to Modification 1 of Example 1 of an embodiment shown in Fig. 28, the thickness of the first stress relaxation layer 107b may be greater than the thickness of the second stress relaxation layer 107c, thereby making it possible to further suppress the occurrence of defects on the light emitting layer 105 side.

[0151] For example, a light emitting element array may be configured having a plurality of light emitting element units LE arranged one-dimensionally or two-dimensionally, as in the surface light emitting element 10-2 according to Modification 2 of Example 1 of an embodiment shown in Figure 29. Note that, although the anode and cathode are common in this example, the anode wiring 112 may be separated between the light emitting element units LE to provide independent anodes. In this case, each light emitting element unit LE can be driven independently.

[0152] 30 , the stacked structure 107 may be disposed between the tunnel junction layer 114 and the upper light-emitting layer 105 (more specifically, between the tunnel junction layer 114 and the upper first cladding layer 104). Here, the first stress relaxation layer 107b is disposed above the second stress relaxation layer 107c, but the first stress relaxation layer 107b may also be disposed below the second stress relaxation layer 107c.

[0153] 31 , the stacked structure 107 may be disposed between the tunnel junction layer 114 and the lower light-emitting layer 105 (more specifically, between the tunnel junction layer 114 and the lower second cladding layer 106). Here, the first stress relaxation layer 107b is disposed below the second stress relaxation layer 107c, but the first stress relaxation layer 107b may also be disposed above the second stress relaxation layer 107c.

[0154] 32 , the upper stacked structure 107 may be disposed between the tunnel junction layer 114 and the upper light-emitting layer 105 (more specifically, between the tunnel junction layer 114 and the upper first cladding layer 104). Here, in the upper stacked structure 107, the first stress relaxation layer 107b is disposed above the second stress relaxation layer 107c, but the first stress relaxation layer 107b may also be disposed below the second stress relaxation layer 107c.

[0155] 33 , the lower stacked structure 107 may be disposed between the tunnel junction layer 114 and the lower light-emitting layer 105 (more specifically, between the tunnel junction layer 114 and the lower second cladding layer 106). Here, in the lower stacked structure 107, the first stress relaxation layer 107b is disposed below the second stress relaxation layer 107c, but the first stress relaxation layer 107b may also be disposed above the second stress relaxation layer 107c.

[0156] In a surface-emitting device having a multi-junction structure with multiple light-emitting layers 105 and at least one stacked structure 107, a tunnel junction layer may be provided at a position other than between the light-emitting layers 105, in addition to or instead of between the light-emitting layers 105.

[0157] In the single junction structure having a single light emitting layer 105 and the surface light emitting device having at least one stacked structure 107, a tunnel junction layer may be provided.

[0158] In the surface-emitting devices according to the above-described embodiments and modifications, the stacked structure 107 may be provided in at least one of the first semiconductor multilayer reflector 103, the second semiconductor multilayer reflector 108, the first cladding layer 104, and the second cladding layer 106.

[0159] In the surface light emitting devices according to the above-described embodiments and modifications, the buffer layer 102 may not be provided.

[0160] In the surface emitting devices (particularly surface emitting lasers) according to the above-described embodiments and modifications, the first and second cladding layers 104 and 106 may not be provided.

[0161] In the surface light emitting devices according to the above-described embodiments and modifications, the contact layer 109 may not be provided.

[0162] In the above-described embodiments and modifications, a GaAs-based surface-emitting device (a material system lattice-matched to GaAs) has been mainly described, but the present technology is not limited thereto and can also be applied to, for example, an InP-based surface-emitting device (a material system lattice-matched to InP), a GaN-based surface-emitting device (a material system lattice-matched to GaN), etc. Examples of InP-based devices include AlGaInP-based devices, AlGaInAs-based devices, and AlInAs-based devices.

[0163] That is, materials that emit light at any wavelength within the wavelength range of 200 to 2000 nm can be used for the surface light emitting element.

[0164] At least one of the first and second structures ST1, ST2 is not limited to a semiconductor multilayer film reflector, but may in fact have a reflector made up of one or a combination of two or more types selected from semiconductors, dielectrics, and metals.

[0165] In the surface light emitting devices according to the above-described embodiments and modifications, the conductivity types (p-type and n-type) of the first and second semiconductor structures may be reversed. In this case, however, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0166] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0167] In each of the above-described embodiments and modifications, the arrangement, material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the surface-emitting device can be appropriately changed within the range in which the surface-emitting device functions.

[0168] 20. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot, or on a low-power device (for example, a smartphone, a smartwatch, a tablet, a mouse, etc.).

[0169] The surface light emitting device according to the present technology can also be applied as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0170] 21. Example of Application of Surface Light Emitting Device to Distance Measuring Device An application example of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described below.

[0171] 34 illustrates an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a surface light emitting element 10, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface light emitting element 10. The distance measurement device 1000 includes, for example, the surface light emitting element 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0172] The light receiving device 125 receives light emitted from the surface light emitting device 10 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 128 is a lens, such as a collimating lens, for converting the light emitted from the surface light emitting device 10 into parallel light. The lens 138 is a lens, such as a condensing lens, for collecting the light reflected by the subject S and guiding it to the light receiving device 125.

[0173] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light-receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155 or an output signal from a detection unit that directly detects the output of the surface-emitting device 10. The control unit 155 is, for example, a processor that controls the surface-emitting device 10, the light-receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 175.

[0174] In this application example, instead of the surface light emitting element 10, any of the surface light emitting elements 10-1, 10-2, 20, 30, 40, 50, 60, 70, 80, 90, 100, 100-1, 100-2, 115, 115-1, 115-2, 120, 130, 140, 150, 160, 170, and 180 can also be applied to the distance measurement device 1000.

[0175] 22. Example in which distance measuring device is mounted on a moving body> FIG. 35 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0176] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 35, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0177] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0178] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0179] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0180] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0181] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0182] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0183] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0184] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 35, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0185] FIG. 36 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0186] In FIG. 36, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0187] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0188] 36 shows an example of the detection ranges of the distance measuring devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measuring device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measuring devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measuring device 12104 provided on the rear bumper or back door.

[0189] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0190] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0191] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0192] The present technology may also be configured as follows: (1) A surface light emitting device comprising a light emitting element portion including: a first structure including a first semiconductor structure, a second structure including a second semiconductor structure stacked on the first structure, a light emitting layer arranged between the first and second structures, and a stacked structure provided between a surface of the first structure opposite to the light emitting layer side and a surface of the second structure opposite to the light emitting layer side, wherein the stacked structure includes: an oxidized constriction layer, a first stress relaxation layer arranged on the light emitting layer side of the oxidized constriction layer, and a second stress relaxation layer arranged on the opposite side to the light emitting layer side of the oxidized constriction layer, wherein the first stress relaxation layer includes a first semiconductor region having a first Al composition, and the second stress relaxation layer includes a second semiconductor region having a second Al composition, and the second Al composition is higher than the first Al composition. (2) The surface light emitting device according to (1), wherein the oxidized constriction layer has a non-oxidized portion and an oxidized portion surrounding the non-oxidized portion, wherein the non-oxidized portion has a third Al composition, and the third Al composition is higher than the second Al composition. (3) The surface light emitting device according to (1) or (2), wherein the second stress relaxation layer includes an oxidized region surrounding the second semiconductor region. (4) The surface light emitting device according to (3), wherein the oxidized region has a tapered shape that becomes thinner toward its inner circumferential edge. (5) The surface light emitting device according to any one of (1) to (4), wherein the difference between the second Al composition and the first Al composition is 0.1 or more. (6) The surface light emitting device according to any one of (1) to (5), wherein the second Al composition is 0.4 or more and 0.95 or less. (7) The surface light emitting device according to any one of (1) to (6), wherein the first Al composition is 0.3 or more and 0.8 or less. (8) The surface-emitting device according to any one of (1) to (7), wherein the thickness of the second stress relaxation layer is greater than the thickness of the first stress relaxation layer. (9) The surface-emitting device according to any one of (1) to (8), wherein the stacked structure includes a plurality of the first stress relaxation layers stacked on top of each other. (10) The surface-emitting device according to (9), wherein the first semiconductor regions of the plurality of first stress relaxation layers include at least two first semiconductor regions having different first Al compositions. (11) The surface-emitting device according to (9) or (10), wherein the plurality of first stress relaxation layers include at least two first stress relaxation layers having different thicknesses.(12) The surface-emitting device according to any one of (1) to (11), wherein the laminated structure includes a plurality of the second stress relaxation layers stacked on top of each other. (13) The surface-emitting device according to (12), wherein the second semiconductor regions of the plurality of second stress relaxation layers include at least two second semiconductor regions having different second Al compositions. (14) The surface-emitting device according to (13), wherein the second Al composition of the at least two second semiconductor regions increases as the second semiconductor region is closer to the oxidized constriction layer. (15) The surface-emitting device according to any one of (12) to (14), wherein the plurality of second stress relaxation layers include at least two second stress relaxation layers having different thicknesses. (16) The surface-emitting device according to any one of (1) to (15), wherein a plurality of the light-emitting layers are stacked between the first and second structures. (17) The surface-emitting device according to any one of (1) to (16), wherein a plurality of the laminated structures are stacked between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side. (18) The surface light emitting device according to (17), wherein a plurality of the light emitting layers are stacked between the first and second structures. (19) The surface light emitting device according to any one of (1) to (18), wherein a tunnel junction layer is disposed between the first and second structures. (20) The surface light emitting device according to any one of (1) to (19), wherein a recess portion surrounding the stacked structure is provided on a surface of the light emitting element portion facing the second structure.

[0193] 10, 10-1, 10-2, 20, 30, 40, 50, 60, 70, 80, 90, 100, 100-1, 100-2, 115, 115-1, 115-2, 120, 130, 140, 150, 160, 170, 180: surface-emitting device 101: substrate 103: first semiconductor multilayer film reflector (part of first semiconductor structure) 104: first cladding layer (part of first semiconductor structure) 105: light-emitting layer 106: second cladding layer (other part of second semiconductor structure) 107: laminated structure 107a: oxidized constriction layer 107a1: non-oxidized portion 107a2: oxidized portion 107b: first stress relaxation layer 107c: second stress relaxation layer 107c1: non-oxidized region 107c2: oxidized region 108: Second semiconductor multilayer film reflector (part of the second semiconductor structure) 109: Contact layer LE: Light emitting element portion ST1: First structure ST2: Second structure SS1: First semiconductor structure SS2: Second semiconductor structure

Claims

1. A surface-emitting device comprising a light-emitting element portion including: a first structure including a first semiconductor structure; a second structure including a second semiconductor structure laminated with the first structure; a light-emitting layer disposed between the first and second structures; and a laminate structure provided between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side, wherein the laminate structure includes: an oxidized constriction layer; a first stress relaxation layer disposed on the light-emitting layer side of the oxidized constriction layer; and a second stress relaxation layer disposed on the opposite side of the oxidized constriction layer to the light-emitting layer side, wherein the first stress relaxation layer includes a first semiconductor region having a first Al composition; and the second stress relaxation layer includes a second semiconductor region having a second Al composition, and the second Al composition is higher than the first Al composition.

2. The surface-emitting element according to claim 1, wherein the oxidized constriction layer has a non-oxidized portion and an oxidized portion surrounding the non-oxidized portion, the non-oxidized portion having a third Al composition, the third Al composition being higher than the second Al composition.

3. The surface light emitting device according to claim 1, wherein the second stress relief layer includes an oxidized region surrounding the second semiconductor region.

4. The surface light emitting device according to claim 3, wherein the oxidized region has a tapered shape in which the thickness becomes thinner as it approaches the inner circumferential edge.

5. The surface light emitting element according to claim 1, wherein the difference between said second Al composition and said first Al composition is 0.1 or more.

6. The surface light emitting device according to claim 1, wherein the second Al composition is not less than 0.4 and not more than 0.

95.

7. The surface light emitting device according to claim 1, wherein the first Al composition is not less than 0.3 and not more than 0.

8.

8. The surface light emitting device according to claim 1, wherein the second stress relief layer is thicker than the first stress relief layer.

9. The surface-emitting device according to claim 1, wherein the laminated structure includes a plurality of the first stress relieving layers laminated on one another.

10. The surface light emitting device according to claim 9, wherein the first semiconductor regions of the plurality of first stress relieving layers include at least two of the first semiconductor regions having different first Al compositions.

11. The surface-emitting device according to claim 9, wherein the plurality of first stress relief layers include at least two of the first stress relief layers having different thicknesses.

12. The surface light emitting device according to claim 1, wherein the laminated structure includes a plurality of the second stress relieving layers laminated on one another.

13. The surface light emitting device according to claim 12, wherein the second semiconductor regions of the plurality of second stress relieving layers include at least two second semiconductor regions having different second Al compositions.

14. The surface light emitting device according to claim 13, wherein the at least two second semiconductor regions have a higher second Al composition in the region closer to the oxidized constriction layer.

15. The surface-emitting device according to claim 12, wherein the plurality of second stress relief layers include at least two second stress relief layers having different thicknesses.

16. The surface light emitting device according to claim 1, wherein a plurality of the light emitting layers are stacked between the first and second structures.

17. The surface light emitting device according to claim 1, wherein a plurality of said laminated structures are laminated.

18. The surface light emitting device according to claim 17, wherein a plurality of the light emitting layers are laminated.

19. The surface-emitting device of claim 1, further comprising a tunnel junction layer disposed between the first and second structures.

20. The surface light emitting device according to claim 1, wherein a recess surrounding the laminated structure is provided on the surface of the light emitting element portion facing the second structure.

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