Wafer electroplating device

Abstract

The present application provides a wafer electroplating device, comprising an electroplating tank used for containing an electroplating solution, wherein an anode is arranged in the electroplating tank; and a flow field plate arranged between the anode and a wafer, wherein a plurality of through holes are formed in the flow field plate to allow the electroplating solution to pass through to form a flow field, the flow field plate comprises at least one flow field transition area, and each flow field transition area comprises at least two flow field areas with different resistivities. The maximum resistivity of each flow field transition area is the minimum resistivity of a flow field with the maximum resistivity among two adjacent flow fields in the radial direction, or the minimum resistivity of the flow field transition area is the maximum resistivity of a flow field with the minimum resistivity among two adjacent flow fields in the radial direction, and the flow field area with the maximum resistivity or the flow field area with the minimum resistivity in the flow field transition area extends to a boundary on one side of the flow field with the same resistivity as the flow field area. The wafer electroplating device of the present application can realize uniform coating on the wafer.

Description

Wafer electroplating equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer electroplating device. Background Art

[0002] In the integrated circuit manufacturing process, devices usually need to be plated. The coating methods include electrolytic plating, evaporation, printing, etc. Electrolytic plating has been widely used due to its relatively stable performance.

[0003] Taking copper plating on wafers as an example, conventional techniques typically involve first forming a seed layer on the wafer, and then electroplating copper onto the seed layer. To maximize the copper plating area, electrodes only electrically contact the seed layer at the edges of the wafer, with current flowing from the edge to the center, coating the entire wafer.

[0004] However, the seed layer itself has resistance. When current flows through the seed layer from the wafer edge to the center, the current gradually decreases with distance. Therefore, locations at equal distances from the wafer edge have the same current and thus the same film thickness, while locations at unequal distances from the wafer edge have different film thicknesses, resulting in significant thickness differences between different circumferences of the wafer, affecting the uniformity of the wafer coating. Summary of the Invention

[0005] An embodiment of the present application provides a wafer electroplating device that can make wafer coating more uniform.

[0006] The present application provides a wafer electroplating device, comprising: an electroplating tank for accommodating an electroplating liquid, wherein an anode electrode is provided in the electroplating tank; a flow field plate, arranged between the anode electrode and the wafer, wherein the flow field plate is provided with a plurality of through holes for the electroplating liquid to pass through to form a flow field, wherein the flow field plate comprises at least one flow field transition zone, and each flow field transition zone comprises at least two flow field zones with different resistivities; wherein the maximum resistivity in each flow field transition zone is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the flow fields on both adjacent sides in the radial direction, or the minimum resistivity in the flow field transition zone is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the flow fields on both adjacent sides in the radial direction, and the flow field zone with the largest resistivity or the flow field zone with the smallest resistivity in the flow field transition zone extends to the boundary of the side of the flow field with the same resistivity as it.

[0007] Specifically, the maximum resistivity in the flow field transition zone is the minimum resistivity in the flow field on the side where the maximum resistivity in the adjacent two flow fields is located, and the minimum resistivity in the flow field transition zone is the maximum resistivity in the flow field on the side where the minimum resistivity in the adjacent two flow fields is located.

[0008] Specifically, the flow field plate includes a central area, and the flow field transition area is arranged around the central area.

[0009] Specifically, the resistivity at each location in the central region is the same.

[0010] Specifically, each flow field transition region includes multiple flow field areas and fills the entire flow field transition region.

[0011] Specifically, the resistivities of any two adjacent flow field regions in each flow field transition region are different.

[0012] Specifically, there are multiple flow field regions of each resistivity in each flow field transition region, and the flow field regions with the same resistivity are evenly distributed in the flow field transition region.

[0013] Specifically, each flow field transition region is annular.

[0014] Specifically, it includes a plurality of flow field transition areas, and the plurality of flow field transition areas are adjacently arranged.

[0015] Specifically, the distance between the outer ring line of the outermost flow field transition zone on the flow field plate and the center of the flow field plate is less than or equal to the wafer radius.

[0016] Specifically, in the radial direction of each flow field transition zone, the flow field zone with the largest resistivity and / or the flow field zone with the smallest resistivity occupies the largest proportion on the ring edge line on one side of the flow field transition zone with the same resistivity.

[0017] Specifically, the flow field region with the largest resistivity and / or the flow field region with the smallest resistivity accounts for 100% of the ring edge line on one side of the flow field transition region with the same resistivity.

[0018] Specifically, on the 1 / 2 ring width line of each flow field transition zone, the flow field area of ​​each resistivity accounts for the same proportion.

[0019] Specifically, in the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity varies smoothly.

[0020] Specifically, in the radial direction of each flow field transition zone, the proportion of the flow field region with the maximum and / or minimum resistivity changes in a step-like manner.

[0021] Specifically, the proportion of the flow field area with the same resistivity in the radial direction in two adjacent flow field transition zones increases from small to large and then to small.

[0022] Specifically, the at least two flow field areas are formed by equally dividing each flow field transition area along the circumferential direction.

[0023] Specifically, at least some of the through holes in the flow field regions of the flow field plate with the same resistivity are the same.

[0024] Specifically, at least some of the flow field regions of the flow field plate with different resistivities have different through-hole sizes.

[0025] Specifically, at least some flow field regions of the flow field plate with different resistivities have different through-hole distribution densities.

[0026] Specifically, at least some of the flow field regions of the flow field plate with different resistivities have different through-hole depths.

[0027] In the wafer electroplating device of the present application, there is at least one flow field transition zone on the flow field plate, and the resistivity in the flow field transition zone is between the resistivity of the flow fields on both sides adjacent to each other. The resistivity of the flow field transition zone can provide a transition for the resistivity of the flow fields on both sides adjacent to each other, so as to make the wafer coating more uniform.

[0028] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by practice of the present application.

[0029] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application.

[0030] Summary of the Figures

[0031] The accompanying drawings are incorporated into and constitute a part of the specification, illustrating embodiments consistent with the present application and, together with the specification, explaining the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can derive other drawings based on these drawings without inventive effort. In the drawings:

[0032] FIG1 shows a schematic structural diagram of a wafer electroplating device according to an embodiment of the present application;

[0033] FIG2 shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0034] FIG3 shows a schematic diagram of a flow field transition region according to an embodiment of the present application;

[0035] FIG4 shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0036] FIG5 shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0037] FIG6 shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0038] FIG7 shows a schematic diagram of a flow field transition region according to an embodiment of the present application;

[0039] FIG8 shows a schematic diagram of a flow field transition region according to an embodiment of the present application;

[0040] FIG9 shows a schematic diagram of a flow field transition region according to an embodiment of the present application;

[0041] FIG10 shows a schematic structural diagram of a flow field plate according to an embodiment of the present application.

[0042] Among them, 1. wafer, 2. plating tank, 3. chuck, 4. flow field plate, 5. plating solution, 6. anode electrode, 7. cathode electrode, 41. center area, 42. flow field transition area, 421. flow field area

[0043] Preferred embodiments of the present invention

[0044] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art.

[0045] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner.In the following description, many specific details are provided so as to provide a full understanding of the embodiments of the present application. However, it will be appreciated by those skilled in the art that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps etc. can be adopted. In other cases, known methods, devices, implementations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0046] 1 to 10 , this embodiment provides a wafer electroplating device capable of improving the uniformity of the coating on the wafer 1 .

[0047] As shown in Figure 1, the wafer electroplating apparatus includes a plating tank 2, a chuck 3 that rotates and holds a wafer 1, and a flow field plate 4 with multiple through-holes. The plating solution 5 in the plating tank 2 contains plating cations. The plating tank 2 also includes an anode 6, which typically submerges the plating solution 5. A cathode 7 is provided on the chuck 3, which is used to move the wafer 1 into and out of the plating tank 2. The flow field plate 4 is positioned between the anode 6 and the wafer 1. The plating solution 5 flows through the through-holes in the flow field plate 4, forming a flow field on the plate 4. The resistance of the flow field affects the number of cations passing through it. A higher resistance results in fewer cations passing through, while a lower resistance results in more cations passing through. When power is applied to the anode 6 and cathode 7, plating cations in the plating solution 5 precipitate. The precipitated cations flow through the flow field to the cathode 7, where they adhere to the wafer 1 to form a plating layer. The flow field plate 4 is adapted to the shape of the electroplating tank 2 and can be square or circular. The range of the through-hole distribution on the flow field plate 4 can be less than or equal to the area of ​​the wafer 1. In other embodiments of the present application, the range of the through-hole distribution on the flow field plate 4 can be larger than the area of ​​the wafer 1, which can be set as needed.

[0048] As shown in FIG. 2, the flow field plate 4 includes a central region 41 and a flow field transition region 42 disposed around the central region 41. The resistivity of the flow field at each location within the central region 41 is the same, and there are multiple resistivities of the flow field in the flow field transition region 42. Part of the flow field in the flow field transition region 42 is taken as a flow field area, and the resistivity of the flow field at each location within the same flow field area is the same. The flow field transition region 42 includes multiple flow field areas with different resistivities. For example, the flow field transition region 42 may include a flow field area 421 with a resistivity of R1 and a flow field area 422 with a resistivity of R2, and R1 < R2. In the radial direction of the flow field plate 4, the maximum resistivity in the flow field transition region 42 may be the minimum resistivity in the flow field on the side where the maximum resistivity in the adjacent two-side flow fields 43 is located. For example, if the resistivity of one side flow field in the adjacent two-side flow fields 43 includes R0 and R1, and the resistivity of the other side flow field includes R2 and R3, and R0 < R1 < R2 < R3, then the maximum resistivity in the adjacent two-side flow fields 43 is R3, and the side flow field where the maximum resistivity in the adjacent two-side flow fields 43 is located is the side flow field where the flow field area with a resistivity of R3 is located. Then the maximum resistivity in the flow field transition region 42 is the minimum resistivity R2 in the side flow field where the flow field area with a resistivity of R3 is located, so that the flow field transition region 42 has the same resistivity as the adjacent side flow field in the radial direction. The flow field area with the maximum resistivity in the flow field transition region 42 extends to the boundary of the side flow field with the same resistivity as it, so that the boundary has the same resistivity as the adjacent side flow field. For example, the flow field area 422 with a resistivity of R2 in the flow field transition region 42 extends to the boundary of the side flow field with a resistivity of R2, so that during the electroplating process, when electroplating the rotating wafer 1, the film layer formed by the cations passing through the flow field transition region 42 and the film layer formed by the cations passing through the side flow field where the maximum resistivity is located are smoothly transitioned at the boundary, so that the film layer thickness of the wafer 1 changes smoothly in the radial direction, reducing the thickness difference between different circumferences on the wafer 1 and improving the uniformity of the coating. In an implementation manner of the embodiment of the present application, if the resistivity of the side flow field where the maximum resistivity in the adjacent two-side flow fields 43 is located is one kind, then the maximum resistivity in the flow field transition region 42 is the resistivity of the side flow field where the maximum resistivity is located, and the maximum resistivity in the flow field transition region 42 extends to the boundary of the side flow field where the maximum resistivity in the adjacent two-side flow fields 43 is located. For example, if the resistivities of the adjacent two-side flow fields 43 are R1 and R2 respectively, and R1 < R2, then the maximum resistivity in the flow field transition region 42 is the resistivity R2 of the side flow field where the maximum resistivity in the adjacent two-side flow fields 43 is located, and the flow field area 422 with a resistivity of R2 in the flow field transition region 42 extends to the boundary of the side flow field where the maximum resistivity R2 in the adjacent two-side flow fields 43 is located.

[0049] Specifically, the radial direction of the flow field plate 4 is the direction from the center of the flow field plate to the middle edge of the flow field plate, or the direction from the middle edge of the flow field plate to the center of the flow field plate. Hereinafter, the radial direction refers to the radial direction of the flow field plate 4. The adjacent two side flow fields 43 of the flow field transition zone 42 in the radial direction refer to the flow fields adjacent to the boundary of the flow field transition zone 42 and located in the radial direction of the flow field transition zone 42. The adjacent side flow field refers to the flow field adjacent to the inner boundary of the flow field transition zone 42 or the flow field adjacent to the outer boundary of the flow field transition zone 42. The inner boundary of the flow field transition zone 42 refers to the boundary of the flow field transition zone 42 that is closer to the center of the flow field plate, and the outer boundary of the flow field transition zone 42 refers to the boundary of the flow field transition zone 42 that is closer to the middle edge of the flow field plate. The center of the flow field plate refers to the position on the flow field plate 4 used to pass the plating solution 5 for plating the center of the wafer 1. When the flow field plate 4 is circular, the center of the flow field plate can be the center of the flow field plate 4. Resistivity refers to the resistance per unit area of ​​the flow field plate 4. In other implementations of the embodiment of the present application, there may be multiple flow field transition zones 42 .

[0050] In the radial direction of the flow field plate 4, the minimum resistivity in the flow field transition region 42 can be the maximum resistivity in the flow field on the side where the minimum resistivity in the adjacent two-side flow fields 43 is located. The flow field region with the minimum resistivity in the flow field transition region 42 extends to the boundary of the flow field on the side having the same resistivity as it. For example, if the resistivity of one side flow field in the adjacent two-side flow fields 43 includes R0 and R1, the resistivity of the other side flow field includes R2 and R3, and R0 < R1 < R2 < R3, then the minimum resistivity in the adjacent two-side flow fields 43 is R0, the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located is the side flow field where the flow field region with resistivity R0 is located, then the minimum resistivity in the flow field transition region 42 is the maximum resistivity R1 in the side flow field where the flow field region with resistivity R0 is located, and the flow field region 421 with resistivity R1 extends to the side flow field with resistivity R0, so that there is the same resistivity between the flow field transition region 42 and the side flow field where the minimum resistivity is located, and there is the same resistivity between the boundary and the side flow field where the minimum resistivity is located, thereby enabling the film layer formed by the cations passing through the flow field transition region 42 and the film layer formed by the cations passing through the side flow field where the minimum resistivity is located to smoothly transition at the boundary, improving the uniformity of the film coating. The resistivity gradually increases from the side flow field where the minimum resistivity is located, through the flow field transition region 42 to the side flow field where the maximum resistivity is located. Compared with the adjacent two-side flow fields 43 of the flow field transition region 42 being directly adjacent without the flow field transition region 42, it can make the change of resistivity in the flow field plate 4 smoother, which is further beneficial to uniform film coating. In an implementation manner of the embodiment of the present application, if the resistivity of the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located is one kind, then the minimum resistivity in the flow field transition region 42 is the resistivity of the side flow field where the minimum resistivity is located, and the flow field region with the minimum resistivity in the flow field transition region 42 extends to the boundary of the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located. For example, if the resistivity of the adjacent two-side flow fields 43 is R1 and R2 respectively, and R1 < R2, then the minimum resistivity in the flow field transition region 42 is the resistivity R1 of the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located, and the flow field region with the minimum resistivity in the flow field transition region 42 extends to the boundary of the side flow field where the minimum resistivity R1 in the adjacent two-side flow fields 43 is located.

[0051] In the flow fields 43 on the adjacent two sides of the flow field transition region 42, the resistivity of each side flow field can be one or more. The resistivity in the side flow field where the maximum resistivity is located is greater than the resistivity in the side flow field where the minimum resistivity is located. For example, it can be that the resistivity of the inner flow field of the flow field transition region 42 is greater than the resistivity of the outer flow field, or it can be that the resistivity of the outer flow field of the flow field transition region 42 is greater than the resistivity of the inner flow field. Here, the inner flow field is the flow field closer to the center of the flow field plate than the flow field transition region 42, and the outer flow field is the flow field closer to the edge of the flow field plate than the flow field transition region 42. For example, if the resistivity at each location in the adjacent inner flow field is R1 and the resistivity at each location in the adjacent outer flow field is R2, and R1 < R2, then the flow field transition region 42 can include two flow field regions with resistivities of R1 and R2.

[0052] The number of flow field regions in the flow field transition region 42 can exceed two, the number of resistivity types can exceed two, and the number of flow field regions with each resistivity can be one or more. The multiple flow field regions fill the flow field transition region 42 so that the coating thickness can be adjusted at each location in the flow field transition region 42. As shown in FIG. 3, the number of resistivity types can be 3, which are R1, R2, and R3 respectively, where R1 < R2 < R3. As shown in FIG. 4, the number of resistivity types can be 4, which are R1, R2, R3, and R4 respectively, where R1 < R2 < R3 < R4. In other embodiments of the embodiments of the present application, in the flow field transition region 42, there can be a gap between the flow field regions, that is, only part of the positions in the flow field transition region 42 are transitioned, and when electroplating the rotating wafer 1, the uniformity of the film layer can also be improved.

[0053] Among the multiple flow field regions in the flow field transition region 42, the resistivity of any two adjacent flow field regions is different, so that the flow field regions with the same resistivity in the flow field transition region 42 are dispersed, allowing the plating ions of different concentrations to inter-dope through the flow field transition region 42, which is conducive to uniform coating. Furthermore, the flow field regions with the same resistivity are evenly distributed in each flow field transition region, further improving the uniformity of the coating. Each flow field region includes one or more rows of through holes, and the through holes within the same flow field region are identical and evenly distributed. In each flow field transition region, the through holes in the flow field regions with the same resistivity are identical, facilitating drilling. In each flow field transition region, the flow field regions with different resistivities have one or more of different through hole sizes, different through hole distribution densities, and different through hole depths. Specifically, when the through hole distribution density and through hole depth are the same, the larger the hole diameter, the lower the resistivity, and the smaller the hole diameter, the higher the resistivity. When the through-hole depth and the aperture are the same, the denser the through-hole distribution, the lower the resistivity, and the sparser the through-hole distribution, the higher the resistivity. When the through-hole distribution density and the aperture are the same, and the smaller the through-hole depth, the lower the resistivity, and the larger the through-hole depth, the higher the resistivity. In other embodiments of the present application, the through-holes in the flow field region with the same resistivity may be different. For example, the resistivity of the flow field region with deeper and denser through-holes may be equal to the resistivity of the flow field region with shallower and less dense through-holes.

[0054] Referring to Figure 4 again, the flow field transition zone 42 can be annular around the central area 41 (the dotted line in the figure is used as the boundary of the flow field transition zone), so that all parts of the circumference of the wafer 1 corresponding to the flow field transition zone 42 are uniformly coated, further reducing the thickness difference between different circumferences on the wafer 1. The center of the annular flow field transition zone 42 can coincide with the center of the flow field plate, so that all parts of the circumference of the wafer 1 corresponding to the annular flow field transition zone 42 are uniformly coated.

[0055] There are multiple annular flow field transition zones 42, which can be 3 as shown in Figure 4. The radial sides of the three flow field transition zones are the inner and outer flow fields 43 respectively. Multiple annular flow field transition zones 42 are arranged adjacent to each other, so that the resistivity can be gradually changed between the multiple annular flow field transition zones 42. In the multiple adjacently arranged annular flow field transition zones 42, the resistivity can be gradually transitioned along the radial direction of the flow field plate 4, so that the resistivity gradually transitions from the resistivity of the inner flow field 43 of the innermost annular flow field transition zone 42 to the resistivity of the outer flow field 43 of the outermost annular flow field transition zone 42. In other implementations of the embodiments of the present application, there can be only one annular flow field transition zone 42.

[0056] If the resistivity of the flow field changes continuously from the center to the edge of the flow field plate and the changing trend remains unchanged, that is, it always changes from small to large or from large to small, then all the annular flow field transition zones 42 on the flow field plate 4 can be arranged adjacent to each other.

[0057] If the changing trend of the flow field resistivity changes from the center to the edge of the flow field plate, that is, the changing trend includes at least two of the three changing trends of resistivity changing from small to large, resistivity changing from large to small, and resistivity remaining unchanged, then in the flow field of the flow field plate 4, for a part of the flow field where the resistivity continuously changes from small to large or the resistivity continuously changes from large to small, multiple annular flow field transition zones 42 are arranged adjacent to each other, while no annular flow field transition zone 42 is arranged in a part of the flow field where the resistivity remains unchanged.

[0058] For example, referring to Figure 5, if the resistance first changes from small to large and then from large to small from the center of the flow field plate to the edge of the flow field plate, in the flow field where the resistivity continuously changes from small to large, the adjacent first inner annular flow field transition zone 42a, the first intermediate annular flow field transition zone 42b and the first outer annular flow field transition zone 42c are sequentially arranged, the minimum resistivity R2 in the first intermediate annular flow field transition zone 42b is the maximum resistivity R2 in the first inner annular flow field transition zone 42a, the flow field area with the minimum resistivity (R2) in the first intermediate annular flow field transition zone 42b extends to the inner ring edge line of the first intermediate annular flow field transition zone 42b, the maximum resistivity R3 in the first intermediate annular flow field transition zone 42b is the minimum resistivity R3 in the first outer annular flow field transition zone 42c, and the flow field area with the maximum resistivity (R3) in the first intermediate annular flow field transition zone 42b extends to the outer ring edge line of the first intermediate annular flow field transition zone 42b. In the flow field where the resistivity continuously changes from large to small, the adjacent second inner annular flow field transition zone 42d, the second intermediate annular flow field transition zone 42e and the second outer annular flow field transition zone 42f are arranged in sequence, the minimum resistivity R2 in the second intermediate annular flow field transition zone 42e is the maximum resistivity R2 in the second outer annular flow field transition zone 42f, the flow field area with the minimum resistivity (R2) in the second intermediate annular flow field transition zone 42e extends to the outer ring edge line of the second intermediate annular flow field transition zone 42e, the maximum resistivity R3 in the second intermediate annular flow field transition zone 42e is the minimum resistivity R3 in the second inner annular flow field transition zone 42d, and the flow field area with the maximum resistivity (R3) in the second intermediate annular flow field transition zone 42e extends to the inner ring edge line of the second intermediate annular flow field transition zone 42e.

[0059] There may be other flow fields between the inner ring line of the innermost annular flow field transition region 42 and the boundary of the central region 41 in the flow field plate 4, and there may also be other flow fields between the outer ring line of the outermost annular flow field transition region 42 and the edge of the flow field plate. The distance between the outer ring line of the outermost flow field transition region 42 on the flow field plate 4 and the center of the flow field plate may be less than or greater than the radius of the wafer 1. Since there is a certain distance between the flow field plate 4 and the wafer 1, when cations move from the flow field plate 4 to the wafer 1, they will diffuse or aggregate according to the shape of the electroplating tank 2, so that the cations reach the wafer 1. In other embodiments of the embodiments of the present application, as shown in FIG. 6, the flow field plate 4 includes three flow field transition regions 42g, 42f, and 42h respectively. The inner ring line of the innermost annular flow field transition region 42g in the flow field plate 4 may be the boundary of the central region 41, and the distance between the outer ring line of the outermost flow field transition region 42h on the flow field plate 4 and the center of the flow field plate may be equal to the radius of the wafer 1.

[0060] Continuing to refer to FIG. 6, among the adjacent annular flow field transition regions 42g, 42f, and 42h, the proportion of the maximum resistivity flow field region of any one of the flow field transition regions 42g, 42f, and 42h on the ring side line on the side of the adjacent flow field transition region with the same resistivity is the largest, preferably 100%. For example, if in the flow field transition regions 42g, 42f, and 42h of FIG. 5, the resistivity R0 < R1 < R2 < R3 < R4, then in the flow field transition region 42f, the proportion of the flow field region with resistivity R2 on the ring side line on the side of the flow field region 42h with the same resistivity R2 is the largest, that is, the proportion of the flow field region with resistivity R2 on the outer ring line of the flow field transition region 42f is the largest, so that the resistivity on this side ring line is the maximum resistivity in the flow field transition region 42f, and the resistivity in the adjacent flow field transition region 42h with the same resistivity is greater than or equal to the maximum resistivity R2. This side ring line can provide a transition between the flow field transition region 42h and the adjacent flow field transition region 42f, making the coating more uniform.

[0061] Furthermore, in the radial direction of each flow field transition zone 42, the proportion of the flow field region with the highest resistivity varies smoothly, where the proportion of the flow field region refers to the ratio of the flow field in the flow field region to the length of the loop in which the flow field is located. Specifically, the proportion of each flow field region with the highest resistivity can vary smoothly. For example, if the through-holes in flow field regions of different resistivities have the same size and depth, but different numbers of through-holes, the ratio of the number of through-holes in the flow field region to the number of through-holes in the loop in which the through-holes are located varies smoothly along the radial direction. The through-holes at the edge of the flow field region 421 can be arranged in a smooth straight line or a smooth curve, as shown in FIG7 , further facilitating uniform coating. In other embodiments of the present application, as shown in FIG8 , the proportion of the flow field region with the highest resistivity can also vary gradually in a step-like manner, that is, the proportion of the flow field region varies after the flow field region extends a certain distance along the radial direction of the flow field plate 4, and the through-holes at the edge of the flow field region are arranged in a step-like manner. In other embodiments of the present application, the proportion of the flow field region with the highest resistivity can also vary gradually in a sawtooth or other shape.

[0062] Similarly, among multiple adjacent annular flow field transition zones 42, the minimum resistivity flow field zone of any flow field transition zone 42 has the largest proportion, preferably 100%, on the annular edge line on the side of the flow field transition zone 42 with the same resistivity, which can also make the coating more uniform. For example, if the minimum resistivity of a flow field transition zone 42 is the same as the maximum resistivity of its adjacent outer flow field transition zone 42, then the minimum resistivity flow field zone proportion on the outer annular line of the flow field transition zone 42 is 100%. If the minimum resistivity of the flow field transition zone 42 is the same as the maximum resistivity of its adjacent inner flow field transition zone 42, then the minimum resistivity flow field zone proportion on the inner annular line of the flow field transition zone 42 is 100%. Furthermore, in the radial direction of each flow field transition zone 42, the proportion of the flow field zone with the minimum resistivity varies smoothly, in steps, or in other gradual shapes. In other embodiments of the present application, as shown in Figure 8, the annular edge line of the flow field transition zone 42 can include multiple resistivities.

[0063] Referring again to FIG. 7 , along the half-width line of each annular flow field transition zone 42, the flow field zones of each resistivity have an equal proportion. This ensures that the resistance value along the half-width line of each annular flow field transition zone 42 is between the resistance values ​​along the lines on either side. This allows the resistivity within each annular flow field transition zone 42 to gradually change, further facilitating uniform film deposition. For example, if the annular flow field transition zone 42 includes two flow field zones with resistivities R1 and R2, respectively, and R1 < R2, then the two flow field zones with resistivities R1 and R2 each account for 50% of the half-width line of the annular flow field transition zone 42.

[0064] Referring again to FIG. 4 , the radial proportion of flow field regions with the same resistivity within two adjacent flow field transition zones 42 increases from small to large and then to small. For example, in FIG. 4 , flow field regions 423 and 424 , both of which have a resistivity of R3, are shown. Since the flow field regions with the same resistivity within the two adjacent flow field transition zones 42 are both the maximum resistivity flow field regions within the flow field transition zones 42 with the smaller resistivity and the minimum resistivity flow field regions within the flow field transition zones 42 with the larger resistivity, the radial proportion of the flow field regions with the same resistivity increases from small to large and then to small. This allows the flow field regions with the same resistivity within the two adjacent flow field transition zones 42 to be arranged adjacent to each other, facilitating drilling. Furthermore, the resistivity of the flow field regions with the same resistivity is the same along the annular edge between the two adjacent flow field transition zones 42 and on both sides of the annular edge. This reduces resistivity jumps along the annular edge between the two adjacent flow field transition zones 42, further facilitating uniform coating.

[0065] In other implementations of the embodiment of the present application, as shown in FIG10 , the flow field area 421 is formed by equally dividing the flow field transition area 42 .

[0066] Those skilled in the art will readily conceive of other embodiments of the present application after considering the specification and practicing the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of this application and include common knowledge or customary techniques in the art that are not disclosed herein.

[0067] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A wafer electroplating device, characterized in that, Including: A plating bath for containing a plating solution, and an anode is provided in the plating bath; A flow field plate is disposed between the anode and the wafer. The flow field plate is provided with a plurality of through holes for the plating solution to pass through to form a flow field. The flow field plate includes at least one flow field transition region, and each flow field transition region includes at least two flow field regions with different resistivities; Wherein, the maximum resistivity in each flow field transition region is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the two adjacent flow fields in the radial direction, or the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the two adjacent flow fields in the radial direction. The flow field region with the maximum resistivity or the minimum resistivity in the flow field transition region extends to the boundary of the flow field on the side with the same resistivity.

2. The wafer electroplating device according to claim 1, wherein, The maximum resistivity in the flow field transition region is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the two adjacent flow fields, and the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the two adjacent flow fields.

3. The wafer electroplating apparatus according to claim 2, wherein, The flow field plate includes a central region, and the flow field transition regions are arranged around the central region.

4. The wafer electroplating apparatus according to claim 3, wherein, The resistivity is the same everywhere in the central region.

5. The wafer electroplating apparatus according to claim 2, wherein, Each flow field transition region includes a plurality of flow field regions and fills the entire flow field transition region.

6. The wafer electroplating apparatus according to claim 5, wherein The resistivities of any two adjacent flow field regions in each flow field transition region are different.

7. The wafer electroplating apparatus according to claim 6, wherein, There are multiple flow field regions with each resistivity in each flow field transition region, and the flow field regions with the same resistivity are evenly distributed in the flow field transition region.

8. The wafer electroplating apparatus according to claim 7, wherein, Each flow field transition region is annular.

9. The wafer electroplating apparatus according to claim 8, wherein, Including a plurality of flow field transition regions, and the plurality of flow field transition regions are arranged adjacent to each other.

10. The wafer electroplating apparatus according to claim 9, wherein, The distance between the outer ring line of the outermost flow field transition region on the flow field plate and the center of the flow field plate is less than or equal to the radius of the wafer.

11. The wafer electroplating apparatus according to claim 10, wherein, In the radial direction of each flow field transition region, the flow field region with the maximum resistivity and / or the minimum resistivity occupies the largest proportion on the ring edge line on the side of the flow field transition region with the same resistivity.

12. The wafer electroplating apparatus according to claim 11, wherein, The flow field region with the maximum resistivity and / or the minimum resistivity occupies 100% of the ring edge line on the side of the flow field transition region with the same resistivity.

13. The wafer electroplating apparatus according to claim 12, wherein, On the 1 / 2 ring width line of each flow field transition region, the proportion of the flow field regions with each resistivity is equal.

14. The wafer electroplating apparatus according to claim 13, wherein, In the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity changes smoothly.

15. The wafer electroplating apparatus according to claim 13, wherein, In the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity changes in a stepped manner.

16. The wafer electroplating apparatus according to claim 13, wherein The proportion of the flow field regions with the same resistivity in two adjacent flow field transition regions changes from small to large and then to small in the radial direction.

17. The wafer electroplating device according to claim 1, wherein, The at least two flow field regions are equally divided along the circumferential direction by each flow field transition region.

18. The wafer electroplating apparatus according to claim 1, wherein The through holes in at least some of the flow field regions with the same resistivity in the flow field plate are the same.

19. The wafer electroplating apparatus according to claim 1, wherein The sizes of the through holes in at least some of the flow field regions with different resistivities in the flow field plate are different.

20. The wafer electroplating apparatus according to claim 1, wherein The distribution densities of the through holes in at least some of the flow field regions with different resistivities in the flow field plate are different.

21. The wafer electroplating apparatus according to claim 1, wherein, The depths of the through holes in at least some of the flow field regions with different resistivities in the flow field plate are different.

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