Optoelectronic semiconductor component

Abstract

The invention relates to an optoelectronic semiconductor component (100) comprising: - an optoelectronic semiconductor chip (10) comprising - a semiconductor body (1) and - an electrical terminal region (5) with a first polarity, said terminal region being provided on the semiconductor body (1); - an electrical connection region (11) with a first polarity, said connection region being provided laterally to the optoelectronic semiconductor chip (10); - at least two connection elements (12), each of which electrically conductively connects the electrical terminal region (5) with the first polarity to the electrical connection region (11) with the first polarity, and - a casing (13) into which the optoelectronic semiconductor chip (10) and the at least two connection elements (12) are incorporated, wherein the connection elements (12) do not protrude beyond the casing (13) on a front face (100A) of the optoelectronic semiconductor component (100).

Description

[0001] 2023PF01061 21 January 2025P2023,1291 WO N - 1 –Description OPTOELECTRONIC SEMICONDUCTOR COMPONENT An optoelectronic semiconductor component is specified, which can be a radiation-emitting semiconductor component. However, it is also possible for the optoelectronic semiconductor component to be a radiation-detecting semiconductor component. The optoelectronic semiconductor component can have an optoelectronic semiconductor chip that is suitable, for example, for emitting mixed-color radiation with various spectral components, for example, from the visible to infrared spectral range. In semiconductor components whose semiconductor chips are electrically connected by means of wire contacts, the problem can arise that the wire contacts protrude from the potting compound in which they are embedded due to the so-called loop height.This leads, for example, to cosmetic defects and unwanted reflections, and entails the risk of damage to the wire contacts due to solder splashes when soldering the semiconductor components. One problem to be solved here is to provide an optoelectronic semiconductor component with improved optical properties. This problem is solved, among other things, by an optoelectronic semiconductor component with the features of the independent claim. 2023PF01061 January 21, 2025P2023,1291 WO N. - 2 –According to at least one embodiment of an optoelectronic semiconductor component, the component comprises an optoelectronic semiconductor chip. For example, the optoelectronic semiconductor chip comprises a semiconductor body and an electrical connection region of the first polarity arranged on the semiconductor body. For example, the electrical connection region of the first polarity is a metallization applied to the semiconductor body or a metallized region. The electrical connection region of the first polarity can form a first electrode, for example a p- or n-electrode, of the optoelectronic semiconductor chip. Furthermore, the semiconductor body can have an active zone provided for generating electromagnetic radiation with a wavelength approximately in the visible to infrared spectral range, for example for generating blue light.Alternatively, the active zone can be provided for detecting electromagnetic radiation with a wavelength approximately in the visible to infrared spectral range. Furthermore, the optoelectronic semiconductor component can comprise an electrical connection region of the first polarity, which is arranged laterally of the optoelectronic semiconductor chip. In this case, the electrical connection region of the first polarity can be laterally offset from the electrical connection region of the first polarity. The electrical connection region of the first polarity can have a connection surface that is lower than a connection surface of the electrical connection region of the first polarity. "Laterally" in the context of the application can refer to lateral directions that run parallel to a main extension plane of the optoelectronic semiconductor component. "Lower lying" in the context of the application can mean "vertically2023PF01061 January 21, 2025P2023,1291 WO N. - 3 –"recessed" means "vertical," where "vertical" can denote a direction that runs transversely, for example perpendicular to a main extension plane of the optoelectronic semiconductor component. The electrical connection region of the first polarity can form a first electrode, such as a p- or n-electrode of the optoelectronic semiconductor component. For example, the electrical connection region of the first polarity can be electrically contacted from the outside on a rear side of the optoelectronic semiconductor component. The electrical connection region of the first polarity can be freely accessible from the outside. The rear side can be a mounting side of the semiconductor component, which serves to attach the semiconductor component.Furthermore, it is possible for the optoelectronic semiconductor component to have at least two connecting elements, each of which electrically conductively connects the electrical connection region of the first polarity to the electrical connection region of the first polarity. For example, the connecting elements each have a curved shape. Furthermore, the optoelectronic semiconductor component can have an enclosure in which the optoelectronic semiconductor chip and the at least two connecting elements are embedded. Advantageously, the connecting elements do not protrude beyond the enclosure on a front side of the optoelectronic semiconductor component. This can be achieved by reducing a maximum height or vertical extension of the, for example, curved shape of the connecting elements. A reduction in the maximum height or loop height can thereby be achieved. - 4 –This can be achieved by using multiple connecting elements instead of a single connecting element, each having a lower thickness than the single connecting element, wherein the height can typically correlate with or be proportional to the thickness. For example, the maximum height can be two to three times greater than the thickness. In the context of the present application, "thickness" is understood to mean a maximum dimension of a cross-section of an element. Furthermore, the height or vertical extension can refer to a dimension along the vertical direction. The front side can be arranged opposite the back side. The encapsulation can surround the optoelectronic semiconductor chip laterally. Furthermore, the connecting elements can be completely embedded in the encapsulation, so that they do not protrude from the encapsulation at any point.Advantageously, the various components of the semiconductor component, such as the semiconductor chip and the connecting elements, can be protected from damage by the encapsulation. According to at least one embodiment of an optoelectronic semiconductor component, this comprises: ^ an optoelectronic semiconductor chip comprising ^ a semiconductor body and ^ an electrical connection region of the first polarity arranged on the semiconductor body, ^ an electrical connection region of the first polarity arranged laterally of the optoelectronic semiconductor chip, ^ at least two connecting elements, each connecting the electrical connection region of the first polarity to the 2023PF01061 January 21, 2025P2023,1291 WO N. - 5 –electrical connection region of first polarity,^ an encapsulation in which the optoelectronic semiconductor chip and the at least two connecting elements are embedded, wherein the connecting elements do not protrude beyond the encapsulation on a front side of the optoelectronic semiconductor component. By embedding the connecting elements in the encapsulation, cosmetic defects and unwanted reflections can be prevented and thus the optical properties of the optoelectronic semiconductor component can be improved. According to at least one embodiment or configuration, each connecting element is a bonding wire.According to at least one embodiment or configuration, the connecting elements each have a thickness that is less than the thickness of a single connecting element that has a current-carrying capacity sufficient for operation of the optoelectronic semiconductor chip, wherein the number of connecting elements is selected such that the total current-carrying capacity of the single connecting element is achieved. For example, the single connecting element can be replaced by four connecting elements of half the thickness. In this case, the maximum height can be approximately halved. By reducing the maximum height, a component height can also be reduced. 2023PF01061 January 21, 2025P2023,1291 WO N. - 6 –According to at least one embodiment or configuration, the optoelectronic semiconductor component has a redundant connecting element. This allows the failure of a connecting element to be compensated. According to at least one embodiment or configuration, first ends of the connecting elements can be arranged next to one another, for example in a row, on the electrical connection region of first polarity. However, it is also possible for the first ends of the connecting elements to be arranged one on top of the other on the electrical connection region of first polarity. Furthermore, it is possible for the first ends of the connecting elements to be arranged partially on top of one another and partially next to one another on the electrical connection region of first polarity. The stacked first ends can, for example, be welded together.However, it is also possible for the stacked first ends to be connected to one another by an electrically conductive connecting means, such as a solder material. For example, the electrical connection region of the first polarity can have a rectangular shape in a plan view of the front. Typically, the size of the electrical connection region depends on the thickness of the connecting element. Advantageously, by reducing the thickness of the connecting elements, the size of the electrical connection region and thus the component size can be reduced. According to at least one embodiment or configuration, second ends of the connecting elements are arranged next to one another on the electrical connection region of the first polarity. 2023PF01061 January 21, 2025P2023,1291 WO N. - 7 –However, it is also possible for at least some of the second ends of the connecting elements to be arranged one above the other on the electrical connection region of the first polarity. This can be the case, for example, if a stacked arrangement does not increase the component height or if there is only space for one connecting element on the semiconductor chip, but several connections are needed from there. For example, the electrical connection region of the first polarity can have a rectangular shape, such as a strip shape, in a plan view of the front side. The electrical connection region of the first polarity can extend along a side edge of the semiconductor body, wherein the side edge is located on a side of the optoelectronic semiconductor chip facing the electrical connection region of the first polarity. The second ends of the connecting elements can be arranged in a row on the electrical connection region of the first polarity.The first and second ends of the electrically conductive connecting means can each be electrically connected to the connection pads, for example, by friction welding. However, it is also possible for the first and second ends to each be electrically connected to the connection pads by an electrically conductive connecting means, such as a solder material. According to at least one embodiment or configuration, the optoelectronic semiconductor chip has a conversion element arranged on a front side of the semiconductor body. The front side of the semiconductor body faces, in particular, the front side of the optoelectronic semiconductor component. 2023PF01061 January 21, 2025P2023,1291 WO N. - 8 –A conversion element is provided for wavelength conversion of the radiation emitted by the semiconductor body or the active zone of the semiconductor body. At least a portion of the radiation can be converted into radiation of a longer wavelength, for example, yellow light. Thus, the optoelectronic semiconductor chip can emit mixed-color radiation, for example, white light. The conversion element can be a ceramic plate made of converter material or a plastic layer with embedded converter particles. According to at least one embodiment or configuration, the connecting elements on the front side of the optoelectronic semiconductor component do not protrude beyond the conversion element. This has advantages when producing the encapsulation, for example, by means of encapsulation (so-called casting process) or by means of a molding process such as injection molding (so-called molding process).For example, the molding process does not require a structured mold to avoid damaging any protruding connecting elements. Instead, a flat mold and thus a simple component concept can be realized. According to at least one embodiment or configuration, the encapsulation on the front side of the optoelectronic semiconductor component is formed step-free, for example, essentially planar. This can be achieved by the aforementioned use of the flat mold. For example, the encapsulation on the front side can be flush with the conversion element. 2023PF01061 January 21, 2025P2023,1291 WO N. - 9 –The conversion element can be uncovered by the encapsulation on the front side. However, it is also possible for the conversion element to be covered by the encapsulation on the front side. By reducing the maximum height or loop height of the connecting elements, the thickness or vertical extent of the conversion element can be reduced without the connecting elements on the front side of the optoelectronic semiconductor component protruding beyond the conversion element. Advantageously, a thinner conversion element can achieve higher conversion efficiency and optical performance, as well as higher contrast of the semiconductor component. Overall, the described measures, such as reducing the maximum height and using a thinner conversion element, lead to an improvement in the optical properties of the optoelectronic semiconductor component.According to at least one embodiment or configuration, the encapsulation contains a potting material, i.e., a material formed into a desired shape, for example, by means of potting or a casting process such as injection molding or compression molding. Silicone, for example, is a suitable potting material. For example, the encapsulation can adhere to the other components, comprising the semiconductor chip and the connecting elements, without additional connecting means. Furthermore, the encapsulation can have reflective particles embedded in the potting material. Suitable materials for the reflective particles are, for example, TiO2 and ZrO2. The encapsulation has reflective properties and can, for example, ensure radiation emission directed toward the front.2023PF01061 January 21, 2025P2023,1291 WO N. - 10 –According to at least one embodiment or configuration, the optoelectronic semiconductor component comprises an electrical connection region of second polarity. The electrical connection region of second polarity can be electrically contactable from the outside on the rear side of the optoelectronic semiconductor component and can thereby be freely accessible from the outside. In particular, the electrical connection region of second polarity is provided for further electrical contacting of the optoelectronic semiconductor chip and forms a second electrode of the optoelectronic semiconductor component. In the context of the present application, the second polarity is different from the first polarity. The optoelectronic semiconductor chip can be arranged on the electrical connection region of second polarity.According to at least one embodiment or configuration, the semiconductor body of the optoelectronic semiconductor chip has a first and a second semiconductor region of different conductivity, wherein the active zone is arranged between the first and the second semiconductor region. The first and the second semiconductor region as well as the active zone can each be formed from one or more semiconductor layers. The semiconductor layers can be layers deposited epitaxially on a growth substrate. The growth substrate can remain in the semiconductor chip or be at least partially removed. The first semiconductor region can be arranged on a side of the semiconductor body facing the electrical connection region of second polarity. The second semiconductor region can be arranged on a side of the semiconductor body facing away from the electrical connection region of second polarity. - 11 –Semiconductor body. For example, the first semiconductor region has a p-conductivity, while the second semiconductor region has an n-conductivity. However, it is also possible for the first semiconductor region to have an n-conductivity and the second semiconductor region to have a p-conductivity. For example, the electrical connection region of the first polarity can be electrically conductively connected to the first semiconductor region. Furthermore, the second semiconductor region can be electrically conductively connected to an electrical connection region or an electrical connection structure of the second polarity of the semiconductor chip. For example, the electrical connection structure of the second polarity can have vias that extend from a side of the first semiconductor region facing the electrical connection region of the second polarity, through the first semiconductor region and the active zone into the second semiconductor region.For example, the electrical connection region or the electrical connection structure of second polarity is electrically conductively connected to the electrical connection region of second polarity. Materials based on arsenide, phosphide, or nitride compound semiconductors, for example, are considered for the semiconductor regions or semiconductor layers of the semiconductor body. "Based on arsenide, phosphide, or nitride compound semiconductors" in the present context means that the semiconductor layers contain AlnGamIn1-n-mAs, AlnGamIn1-n-mP, or AlnGamIn1-n-mN, where 0 ^ n ^ 1, 0 ^ m ^ 1, and n + m ^ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, 2023PF01061 January 21, 2025P2023,1291 WO N. - 12 – It may contain one or more dopants and additional components that affect the characteristic physical properties of Al n Ga m In 1-n-mAs-, Al n Ga m In 1-n-mP or AlnGamIn1-n-mN material. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As, P, or N), even if these may be partially replaced by small amounts of other substances. According to at least one embodiment or configuration, the optoelectronic semiconductor component has a further semiconductor chip. The further semiconductor chip can be an ESD chip (electrostatic discharge chip) for protecting the optoelectronic semiconductor chip from overvoltages or an IC chip (integrated circuit chip) for controlling the optoelectronic semiconductor chip.According to at least one embodiment or configuration, the optoelectronic semiconductor component comprises, in addition to the electrical connection region of second polarity provided for the optoelectronic semiconductor chip, a further connection region of second polarity, on which the further semiconductor chip is arranged. The further semiconductor chip can be electrically connected to the electrical connection region of first polarity by means of a connecting element. Alternatively, the further semiconductor chip can be located on the electrical connection region of first polarity, on which the first ends of the connecting elements are also arranged. This leads to a further simplification of the semiconductor component.2023PF01061 January 21, 2025P2023,1291 WO N. - 13 –According to at least one embodiment or configuration, the electrical connection regions are metallic or metallized regions. According to at least one embodiment or configuration, the optoelectronic semiconductor component comprises a housing frame in which the electrical connection regions are embedded. The housing frame can have a cavity in which the optoelectronic semiconductor chip and the other components mentioned above are arranged and which is filled by the encapsulation. Alternatively, it is possible for the electrical connection regions to be embedded in the encapsulation. In this case, a housing of the optoelectronic semiconductor component can consist of the encapsulation.The optoelectronic semiconductor component is particularly suitable for display devices such as scoreboards, symbols, and displays, as well as for lighting and projection devices, and can be used, for example, in vehicle, consumer, and industrial applications. Further advantages, advantageous embodiments, and refinements emerge from the exemplary embodiments described below in conjunction with the figures. They show: Figure 1 shows a schematic side view of an optoelectronic semiconductor component according to a first exemplary embodiment. Figure 1A shows a schematic side view. 2023PF01061 January 21, 2025P2023,1291 WO N. - 14 –and Figure 1B shows a front view of an optoelectronic semiconductor component according to comparative examples, Figure 2 shows a schematic plan view of an optoelectronic semiconductor component according to the first or a second exemplary embodiment (cf. Figure 5), and Figure 2A shows a schematic plan view of an optoelectronic semiconductor component according to the comparative examples, Figures 3A and 3B each show images of a section of a front side of a composite according to an exemplary embodiment in an intermediate stage of a manufacturing method for manufacturing optoelectronic semiconductor components according to the first or second exemplary embodiment,Figures 4A to 4C each show images of a front side of a composite according to a further embodiment in an intermediate stage of a manufacturing method for producing optoelectronic semiconductor components according to the first or second embodiment, and Figure 4D shows a side view of the composite. Figure 5 shows a schematic cross-sectional view of an optoelectronic semiconductor component according to a second embodiment, and Figure 5A shows a schematic cross-sectional view of an optoelectronic semiconductor component according to a comparative example. In the embodiments and figures, identical, similar, or equivalently acting elements can each be provided with the same reference numerals. The illustrated elements and their relative sizes are 2023PF01061 January 21, 2025P2023,1291 WO N, - 15 –not necessarily to scale; rather, individual elements may be exaggerated for clarity and / or clarity. A first embodiment of an optoelectronic semiconductor component 100 is described with reference to Figures 1 to 4, which is, for example, a radiation-emitting semiconductor component. The optoelectronic semiconductor component 100 may be such that, during operation, a major portion of the radiation is emitted on a front side 100A of the semiconductor component 100. A rear side 100B of the semiconductor component 100, opposite the front side 100A, may be provided for mounting the semiconductor component 100, for example, on a connection carrier, such as a printed circuit board.The optoelectronic semiconductor component 100 comprises an optoelectronic semiconductor chip 10 having a semiconductor body 1 and a connection region 5 of first polarity, wherein the connection region 5 of first polarity is arranged on the semiconductor body 1. The electrical connection region 5 of first polarity forms a first electrode, for example a p- or n-electrode, of the optoelectronic semiconductor chip 10. The connection region 5 can be located off-center on a side edge of the semiconductor chip 10. For example, in a plan view of the front side 100A, the connection region 5 of first polarity has a rectangular, elongated shape, for example a strip shape, and extends along a side edge 1B of the semiconductor body 1 (cf. Figure 2). The connection region 52023PF01061 January 21, 2025P2023,1291 WO N. - 16 –and the side edge 1B can be aligned along a second lateral direction L2. As mentioned above, the semiconductor body 1 can have a first semiconductor region 2 and a second semiconductor region 4 of different conductivity, wherein an active zone 3 can be arranged between the first and second semiconductor regions 2, 4. For example, the first semiconductor region 2 has a p-conductivity, while the second semiconductor region 4 has an n-conductivity. However, it is also possible for the first semiconductor region 2 to have an n-conductivity and the second semiconductor region 4 to have a p-conductivity. The active zone 3 is provided, for example, for generating electromagnetic radiation with a wavelength approximately in the visible to infrared spectral range, for example for generating blue light.As mentioned above, materials based on arsenide, phosphide, or nitride compound semiconductors, for example, are considered for the semiconductor regions 2, 3, 4 or the semiconductor body 1. The electrical connection region 5 of the first polarity is electrically conductively connected, in particular, to the first semiconductor region 2. Furthermore, the second semiconductor region 4 can be electrically conductively connected to an electrical connection structure 6 of the second polarity of the semiconductor chip 10. The electrical connection structure 6 can have vias 6A that extend through the first semiconductor region 2 and the active zone 3 into the second semiconductor region 4. For example, the second semiconductor region 4 can be on a side of the active zone 3 facing the front side 100A, and the first 2023PF01061 January 21, 2025P2023,1291 WO N. - 17 –Semiconductor region 2 may be arranged on a side of the active zone 3 facing away from the front side 100A. The optoelectronic semiconductor chip 10 may have a conversion element 7 arranged on a front side 1A of the semiconductor body 1. As mentioned above, the conversion element 7 is provided for wavelength conversion of the radiation emitted by the semiconductor body 1 or the active zone 3. At least a portion of the radiation can be converted into radiation of a longer wavelength, for example, yellow light. Thus, the optoelectronic semiconductor chip 10 or the optoelectronic semiconductor component 100 can emit mixed-color radiation, for example, white light, during operation. The conversion element 7 may be a ceramic plate made of converter material or a plastic layer with embedded converter particles.Furthermore, the optoelectronic semiconductor component 100 comprises an electrical connection region 11 of first polarity, which is arranged laterally of the optoelectronic semiconductor chip 10, so that the electrical connection region 11 follows the optoelectronic semiconductor chip 10 in a first lateral direction L1. The electrical connection region 11 of first polarity is laterally offset from the electrical connection region 5 of first polarity and follows it in the first lateral direction L1. In particular, the electrical connection region 11 protrudes in lateral directions extending transversely, approximately perpendicularly to the first lateral direction L1, encompassing the second lateral direction L2 (see Figure 2). 2023PF01061 January 21, 2025P2023,1291 WO N. - 18 –not beyond the semiconductor chip 10. The lateral directions comprising the first and second lateral directions L1, L2 can run parallel to a main extension plane of the optoelectronic semiconductor component 100. The electrical connection region 11 of the first polarity has a rectangular shape, for example, in a plan view of the front side 100A. A size of the electrical connection region 11 can be determined by a first lateral extension a1 along the first lateral direction L1 and by a second lateral extension b1 along the second lateral direction L2. The electrical connection region 11 of the first polarity forms a first electrode, for example a p- or n-electrode of the optoelectronic semiconductor component 100. The electrical connection region 11 of the first polarity is freely accessible from the outside on the rear side 100B of the optoelectronic semiconductor component 100 and can be electrically contacted.Furthermore, the optoelectronic semiconductor component 100 comprises, as an electrical bridge between the electrical connection region 5 of first polarity and the electrical connection region 11 of first polarity, a plurality of connecting elements 12, each of which electrically conductively connects the electrical connection region 5 of first polarity to the electrical connection region 11 of first polarity (see Figure 2). For example, the connecting elements 12 each have a curved shape. Both connecting elements 12 can be bond wires. First ends 12A of the connecting elements 12 are each arranged on a connection surface 11A of the connection region 11 of first polarity. Second ends 12B of the 2023PF01061 January 21, 2025P2023,1291 WO N. - 19 –Connecting elements 12 are each arranged on a connection surface 5A of the connection region 5 of the first polarity. The connection surface 11A of the connection region 11 is located lower than the connection surface 5A of the connection region 5 or is set back in the vertical direction V. As shown in Figures 2, 3A, and 3B, the first ends 12A of the connecting elements 12 can be arranged one on top of the other on the electrical connection region 11 of the first polarity. The first ends 12A are, for example, welded to one another or connected to one another by an electrically conductive connecting means such as a solder material. As shown in Figures 4A to 4D, it is also possible for the first ends 12A of the connecting elements 12 to be arranged next to one another, for example in a row, on the electrical connection region 11 of the first polarity.Furthermore, it is possible for the first ends 12A on the electrical connection region 11 of first polarity to be arranged partially on top of one another and partially next to one another (not shown). The second ends 12B can be arranged next to one another on the electrical connection region 5 of first polarity (cf. Figures 2 to 4). However, it is also possible for at least some of the second ends 12B to be arranged one above the other, for example, if a stacked arrangement does not increase the component height d of the semiconductor component 100 or if there is only space for one connection element 12 on the semiconductor chip 10, but several connections are needed from there. 2023PF01061 January 21, 2025P2023,1291 WO N. - 20 –The first ends 12A of the electrically conductive connecting means 12 can be electrically connected to the connection pad 11A, for example, by friction welding or by an electrically conductive connecting means 19, such as a solder material. Furthermore, the second ends 12B of the electrically conductive connecting means 12 can be electrically connected to the connection pad 5A by friction welding or by an electrically conductive connecting means 20, such as a solder material. Furthermore, the optoelectronic semiconductor component 100 has a casing 13, in which the optoelectronic semiconductor chip 10 and the connecting elements 12 are embedded. The optoelectronic semiconductor chip 10 is laterally enclosed by the casing 13. The casing 13 ends flush with the conversion element 7 on the front side 100A.Furthermore, the connecting elements 12 are completely embedded in the encapsulation 13, so that they do not protrude from the encapsulation 13 at any point. In particular, the connecting elements 12 on the front side 100A of the optoelectronic semiconductor component 100 do not protrude beyond the encapsulation 13. At the same time, the encapsulation 13 on the front side 100A is step-free and essentially planar, i.e., within the scope of usual manufacturing tolerances. In contrast, the encapsulation 13 in the comparative example shown in Figure 1A has a stepped profile in the region of the single connecting element 12. In the comparative example, the single connecting element 12 has a thickness s2, which is, for example, 38 µm, and a loop height h2 correlating therewith, which2023PF01061 January 21, 2025P2023,1291 WO N, to ensure a current-carrying capacity sufficient to operate the optoelectronic semiconductor component 100. - 21 –2.5 x s2 and thus 95 µm. With such a loop height h2, the connecting element 12 protrudes beyond a front side 10A of the semiconductor chip 10 and a layer of the encapsulation 13 that is flush with the front side 10A (see Figure 1B). To avoid resulting disadvantages for the optical properties, one approach is to embed the single connecting element 12 in a further layer of the encapsulation 13 in an additional process step that entails additional effort and cost (see Figure 1A). In the present case, a different approach is chosen, which consists in reducing a maximum height h1 of the, for example, curved shape of the connecting elements 12 by reducing their thickness s1. For example, the connecting elements 12 can each have a thickness s1 which corresponds approximately to half the thickness s2 of the single connecting element 12 and is, for example, 18 µm.This results in a maximum height h1 of, for example, 2.5 x s1 = 45 µm. The number of connecting elements 12 is selected such that the total current-carrying capacity of the single connecting element 12 is achieved. For example, the single connecting element 12 can be replaced by four connecting elements 12 of half the thickness (cf. Figures 2 and 2A). In addition, the semiconductor component 100 can have a redundant connecting means 12, so that the failure of a connecting element 12 can be compensated. Reducing the maximum height h1 by, for example, 50 µm has various advantages. Firstly, the component height d of the semiconductor component 100 can be reduced. Secondly, the encapsulation 13 can be manufactured, for example, by means of 2023PF01061 January 21, 2025P2023,1291 WO N. - 22 –Casting (so-called casting process) or by means of a casting process such as injection molding (so-called molding process) or compression molding (so-called compression molding process). For example, injection molding does not require a structured mold to avoid damaging any protruding connecting elements. Instead, a flat mold and thus a simple component concept can be realized. Furthermore, the conversion element 7 can be formed relatively thin, for example with a thickness t < 40 µm, without the connecting elements 12 on the front side 100A protruding beyond the conversion element 7. This advantageously leads to higher conversion efficiency and optical performance and a higher contrast of the semiconductor component 100. Furthermore, a size of the connection area 11A and thus a size of the electrical connection region 11 of the first polarity typically depends on the thickness s2, s1 of the connecting element 12.The electrical connection region 11 should have a size or lateral dimensions a1, a2, b1, b2 of 2.5 times the thickness, so that with a thickness s2 of 38 µm, lateral dimensions a2, b2 of 95 µm result, while with a thickness s1, lateral dimensions a1, b1 of 45 µm result, so that a reduction of 50 µm can be achieved (see Figures 2 and 2A). Thus, the size of the semiconductor component 100 can be reduced from 1.1 mm x 1.25 mm to 1.1 mm x 1.2 mm, for example, by reducing the first lateral dimension a1. This can result in cost savings of around 4%.2023PF01061 January 21, 2025P2023,1291 WO N. - 23 –In the first embodiment, a housing of the semiconductor component 100 is formed by the encapsulation 13. The various components of the semiconductor component 100, such as the semiconductor chip 10 and the connecting elements 12, can be protected from damage by the encapsulation 13. Furthermore, the electrical connection region 11 and further connecting regions 14, 15 are embedded in the encapsulation 13. For example, the encapsulation 13 contains a potting material that is formed into a desired shape, for example by means of a manufacturing method as mentioned above, and is molded onto the other components of the semiconductor component 100, comprising the semiconductor chip 10 and the connecting elements 12, so that they are conformally covered by the encapsulation 13. Silicone, for example, can be used as the potting material. Furthermore, the encapsulation 13 can have reflective particles embedded in the potting material.As mentioned above, TiO2 and ZrO2, for example, are suitable for the reflective particles. The encapsulation 13 has reflective properties and can, for example, ensure radiation emission directed toward the front side 100A. Furthermore, the optoelectronic semiconductor component 100 can have an electrical connection region 14 of second polarity, on which the semiconductor chip 10 is arranged and which is electrically conductively connected to the second semiconductor region 4 by means of the connection structure 6 of second polarity. The electrical connection region 14 of second polarity can be electrically contacted from the outside and is freely accessible, for example, on the rear side 100B of the optoelectronic semiconductor component 100. In particular, the electrical 2023PF01061 January 21, 2025P2023,1291 WO N. - 24 –Connection region 14 of second polarity forms a second electrode of the optoelectronic semiconductor component 100. In addition to the electrical connection region 14 of second polarity, the optoelectronic semiconductor component 100 can comprise a further connection region 15 of second polarity, on which a further semiconductor chip 16 is arranged, which, as mentioned above, can be an ESD chip or an IC chip (see Figure 2). The further semiconductor chip 16 can be electrically connected to the electrical connection region 11 of first polarity by means of a connecting element 17. However, it is also possible for the further semiconductor chip 16 to be applied to the electrical connection region 11 of first polarity, on which the first ends 12A of the connecting elements 12 are also arranged (not shown). This leads to a further simplification of the semiconductor component 100.The electrical connection region 5 and the electrical connection regions 11, 14, 15 are, for example, metallic or metallized regions. A second exemplary embodiment of an optoelectronic semiconductor component 100 is described with reference to Figure 5. The optoelectronic semiconductor component 100 has a housing frame 18 with a cavity 18A, in which the optoelectronic semiconductor chip 10 and the connecting elements 12, as well as the further semiconductor chip 16, if present, are arranged. The cavity 18A is surrounded by the encapsulation 13, into which the components comprising the optoelectronic semiconductor chip 10 and the 2023PF01061 January 21, 2025P2023,1291 WO N. - 25 –Connecting elements 12 and the further semiconductor chip 16, if present, are embedded. The housing frame 18 can be formed from a plastic material. The electrical connection regions 11, 14, 15 (if present) are embedded in the housing frame 18. Furthermore, the semiconductor component 100 can have all the features and advantages mentioned in connection with the first exemplary embodiment. In particular, the connecting elements 12 on the front side 100A do not protrude beyond the encapsulation 13 due to their maximum height h1, which is reduced compared to the loop height h2 of the single connecting element 12 according to the comparative example (see Figure 5A), so that the semiconductor component 100 shown in Figure 5 has improved optical properties and, moreover, a reduced component size. The invention is not limited by the description based on the exemplary embodiments.Rather, the invention encompasses every novel feature and every combination of features, including in particular every combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments. This patent application claims priority from German patent application 102024102633.2, the disclosure of which is hereby incorporated by reference. 2023PF01061 January 21, 2025P2023,1291 WO N. - 26 –List of reference symbols 1 semiconductor body 1A front side 1B side edge 2 first semiconductor region 3 active zone 4 second semiconductor region 5 connection region of first polarity 5A connection area 6 connection structure of second polarity 6A through-hole 7 conversion element 10 optoelectronic semiconductor chip 10A front side 11 electrical connection region of first polarity 11A connection area 12 connecting element 12A first end 12B second end 13 encapsulation 14 electrical connection region of second polarity 15 electrical connection region of second polarity 16 further semiconductor chip 17 connecting means 18 housing frame 18A cavity 19, 20 connecting means 100 optoelectronic semiconductor component 100A front side 100B rear side 2023PF01061 January 21, 2025 P2023,1291 WO N - 27 –a1, a2 first lateral extent b1, b2 second lateral extent h1, h2 maximum height, loop height, vertical extent d component height s1, s2 strength t thickness L1 first lateral direction L2 second lateral direction V vertical direction

Claims

2023PF01061 21 January 2025P2023,1291 WO N - 28 –1. Optoelectronic semiconductor component (100) comprising^ an optoelectronic semiconductor chip (10) comprising^ a semiconductor body (1) and^ an electrical connection region (5) of first polarity arranged on the semiconductor body (1),^ an electrical connection region (11) of first polarity arranged laterally of the optoelectronic semiconductor chip (10),^ at least two connecting elements (12) each electrically conductively connecting the electrical connection region (5) of first polarity to the electrical connection region (11) of first polarity,^ an enclosure (13) in which the optoelectronic semiconductor chip (10) and the at least two connecting elements (12) are embedded, wherein the connecting elements (12) on a front side (100A) of the optoelectronic semiconductor component (100) do not protrude beyond the enclosure (13) and the enclosure (13) on the front side (100A) is planar. 2.The optoelectronic semiconductor component (100) according to the preceding claim, wherein first ends (12A) of the connecting elements (12) are arranged next to one another on the electrical connection region (11) of first polarity.

3. The optoelectronic semiconductor component (100) according to claim 1, wherein first ends (12A) of the connecting elements (12) are arranged one on top of the other on the electrical connection region (11) of first polarity.2023PF01061 January 21, 2025P2023,1291 WO N. - 29 –4. The optoelectronic semiconductor component (100) according to claim 1, wherein first ends (12A) of the connecting elements (12) on the electrical connection region (11) of first polarity are arranged partially on top of one another and partially next to one another.

5. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein second ends (12B) of the connecting elements (12) on the electrical connection region (5) of first polarity are arranged next to one another and / or one another.

6. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the encapsulation (13) on the front side (100A) of the optoelectronic semiconductor component (100) is formed without steps. 7.Optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the optoelectronic semiconductor chip (10) has a conversion element (7) arranged on a front side (1A) of the semiconductor body (1), and the connecting elements (12) on the front side (100A) of the optoelectronic semiconductor component (100) do not protrude beyond the conversion element (7).

8. Optoelectronic semiconductor component (100) according to one of the preceding claims, wherein each connecting element (12) is a bonding wire.

9. Optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the connecting elements (12) each have a thickness (s1) that is less than 2023PF01061 January 21, 2025P2023,1291 WO N. - 30 –a thickness (s2) of a single connecting element (12) that has a current-carrying capacity sufficient for operation of the optoelectronic semiconductor chip (10), wherein a number of connecting elements (12) is selected such that the total current-carrying capacity of the single connecting element (12) is achieved.

10. Optoelectronic semiconductor component (100) according to the preceding claim, which has a redundant connecting element (12).

11. Optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the encapsulation (13) contains a potting material.

12. Optoelectronic semiconductor component (100) according to the preceding claim, wherein the encapsulation (13) has reflective particles embedded in the potting material. 13.Optoelectronic semiconductor component (100) according to one of the preceding claims, which has an electrical connection region (14) of second polarity, on which the optoelectronic semiconductor chip (10) is arranged and which can be electrically contacted from the outside on a rear side (100B) of the optoelectronic semiconductor component (100).

14. Optoelectronic semiconductor component (100) according to the preceding claim, which has a further semiconductor chip (16), wherein the further semiconductor chip (16) is arranged on the electrical connection region (11) of first polarity or2023PF01061 January 21, 2025P2023,1291 WO N. - 31 –is arranged on a further connection region (15) of second polarity.

15. The optoelectronic semiconductor component (100) according to one of the two preceding claims, wherein the electrical connection regions (11, 14, 15) are embedded in the encapsulation (13) or a housing frame (18).

16. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the optoelectronic semiconductor chip (10) has a conversion element (7) that is arranged on a front side (1A) of the semiconductor body (1) and does not protrude beyond the front side (1A) of the semiconductor body (1) in lateral directions (L1, L2).

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