Storage device
The integration of a check bit generation and error correction system with oxide semiconductor transistors in silicon-based flip-flop circuits addresses soft errors and power consumption issues, resulting in a reliable, compact, and efficient semiconductor device.
Patent Information
- Application Number
- PCT/IB2025/050746
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-01-31
- Filing Date
- 2025-01-24
- Publication Date
- 2025-08-07
AI Technical Summary
Existing semiconductor devices using silicon transistors are susceptible to soft errors, particularly in radiation environments, leading to data inversion and reduced reliability, and they consume high power and occupy large circuit scales.
A storage device incorporating a check bit generation unit, memory unit, and error detection and correction unit, utilizing flip-flop circuits with silicon transistors and holding circuits with oxide semiconductor transistors, which have lower off-state currents and are less affected by radiation, enabling error correction and power gating.
The solution provides a highly reliable, miniaturized, and low-power semiconductor device with increased operation speed, capable of correcting errors and maintaining data integrity in radiation environments.