Method for determining the temperature of a semiconductor chip in a power semiconductor module and power semiconductor module with integrated temperature monitoring

Abstract

The present invention relates to a method for determining the temperature of a semiconductor chip in a power semiconductor module and to a power semiconductor module with integrated temperature monitoring.

Description

[0001] Description

[0002] Method for determining the temperature of a semiconductor chip in a power semiconductor module and power semiconductor module with integrated temperature monitoring

[0003] The present invention relates to a method for determining the temperature of a semiconductor chip in a power semiconductor module and to a power semiconductor module with integrated temperature monitoring.

[0004] Power semiconductor modules have a long but limited service life, which results primarily from thermal stress during operation and, in particular, from large temperature fluctuations. Due to the different expansion coefficients of the module construction materials, thermally induced mechanical stresses arise in the area where the different materials are connected, ultimately leading to cracks, delamination, or defects. The most common causes of failure in power semiconductor modules are the bond wires and solder layers. Typical failure mechanisms include bond lift-off, i.e., the lifting or even cracking of the bond wire, heel cracking, or solder fatigue of the chip and system solder, which includes the underlying solder of the ceramic carrier.

[0005] In the context of power module development, accelerated aging tests have become established in practice for providing a service life forecast. These tests include, for example, load cycle tests or the direct execution of temperature cycles. In standardized test setups, a specific number of cycles is specified, which a module must complete without loss of functionality. Using a temperature sensor on the module and mathematical probability distributions, an approximate degree of aging can then be predicted. The actual detection of aging can be carried out after the aging tests, for example, by opening the module and subjecting it to a microsection. Furthermore, the degree of aging of power semiconductor modules can be determined with spatial resolution using various methods. These methods include, for example, X-rays, ultrasound microscopy, or thermography.These imaging methods enable the detection of the aforementioned aging phenomena, but they are very complex and rarely feasible in the module's application environment. Against this background of the prior art, the object of the invention is therefore to create an improved method for measuring the temperature of a semiconductor chip in an electronic assembly and a system for implementing this improved method. In particular, the temperature measurement method according to the invention is intended to enable a simple, cost-effective, and reliable checking of the temperature of the semiconductor chip in a power semiconductor module in the operating environment and under operating conditions.

[0006] This object of the invention is achieved by a method having the features specified in claim 1 and by a system having the features specified in claim 11.

[0007] Preferred developments of the invention are specified in the associated subclaims, the following description and the drawing.

[0008] The method according to the invention is a method for determining the temperature of a semiconductor chip in an electronic assembly, wherein the method comprises at least the following method steps: a) correlating the mechanical natural resonance frequency of the semiconductor chip in the electronic assembly as a function of temperature, wherein the correlation of the mechanical natural resonance frequencies is carried out for a specific structure of the electronic assembly and / or for a specific structure of the semiconductor chip; b) determining the current mechanical natural resonance frequency of the semiconductor chip under operating conditions of the electronic assembly; c) determining the semiconductor chip temperature from the mechanical natural resonance frequency determined in method step b) using the correlation determined from method step a);d) outputting the temperature determined in process step c) and / or storing the temperature determined in process step c) in an electronic memory;

[0009] Surprisingly, it was discovered that by determining the natural resonant frequencies of a semiconductor chip in an electronic assembly, results can be obtained that are highly correlated with the current temperature of the semiconductor chip. This method is reliable, cost-effective, and can be implemented with significantly less error-prone compared to temperature measurement using a thermocouple. The installation of thermocouples can lead to defects in the encapsulation of the semiconductor chip, which can be associated with increased corrosion due to the penetration of unwanted foreign substances. Measuring the natural resonant frequency, on the other hand, can be performed in a significantly less invasive manner with respect to the encapsulation of the semiconductor chip, which increases the application time of the method and the overall service life of the module.Determining the chip temperature via mechanical resonance enables a more precise and technically simpler determination of the chip temperature. This method is particularly suitable for wide-bandgap semiconductors such as SiC and GaN, which are increasingly used in power electronics. These materials exhibit piezoelectric properties and can be set into minute mechanical vibrations by electrical excitation. These vibrations can also be converted into an electrical signal by the piezoelectric effect, allowing the wide-bandgap semiconductors to be advantageously used as both actuators and sensors. For non-piezoelectric chip materials, the actuator and sensor functions can each be implemented via separate functionalities, for example, in the form of a vibration actuator and a vibration sensor.By determining the resonant frequency in general, and especially for a wide-bandgap semiconductor chip, the current temperature can be determined, as the resonant frequency is sensitive to temperature. The material properties and geometry initially determine the resonant frequency. A change in temperature results in a change in the chip's resonant frequency due to the expansion of the material and the change in the elastic modulus. As the temperature increases, for example, a lower resulting resonant frequency can be expected. Thus, the resonant frequency of a chip represents a new and reliable temperature-sensitive parameter in the field of power electronics.

[0010] The method according to the invention is a method for determining the temperature of a semiconductor chip in an electronic assembly. Electronic assemblies include, for example, power semiconductor modules or general power electronics components. These include bipolar power transistors, such as switching power supplies and DC / DC converters, power MOSFETs, IGBTs, motor controllers, and inverters, as well as thyristors, in particular power converters, semiconductor relays, pulse current sources, thyristor controls, or GTO thyristors. The method for temperature determination includes at least the quantitative recording and evaluation of the currently existing natural frequency of the semiconductor chip in the electronic assembly, which allows statements to be made about the current temperature on the semiconductor chip.The method thus enables simple, reliable, non-destructive detection of the temperature of the semiconductor chip or, indirectly, of other parts of the power electronic assembly during component operation. The method comprises method step a), in which the mechanical natural resonance frequency of the semiconductor chip in the electronic assembly is correlated as a function of temperature, wherein the correlation of the mechanical natural resonance frequencies is carried out for a specific structure of the electronic assembly and / or for a specific structure of the semiconductor chip. The natural resonance frequency of the chip structure is understood to be the frequency at which the amplitude of a forced oscillation is maximum. If a semiconductor chip has several natural resonance frequencies, one or more of these frequencies can be considered.The chip's natural resonant frequency is a composite parameter that includes, at a minimum, the material properties, the geometry and dimensions, the mechanical connection of the chip to its environment, and the temperature. For a given geometry of a semiconductor component within a series, the geometric and material parameters are known and constant, allowing a clear and reliable correlation between the chip's natural resonant frequency and temperature. The temperature range suitable for calibration can, for example, extend between -20°C and 300°C.

[0011] The method comprises method step b), in which the current mechanical natural resonance frequency of the semiconductor chip is determined under the operating conditions of the electronic assembly. During operation of the semiconductor module, the mechanical natural resonance frequency of the semiconductor chip can be determined, for example, by exciting the chip to vibrate at different frequencies within a given frequency range and detecting the vibration amplitude of the semiconductor chip. The mechanical natural resonance frequency is determined at the maximum amplitude within the tested frequency range.

[0012] The method comprises step c), in which the semiconductor chip temperature is determined from the mechanical natural resonance frequency determined in step b) using the correlation determined in step a). The current temperature at the chip can be calculated from the known mathematical correlation function between the mechanical natural resonance frequency of the respective semiconductor chip (of a given series or geometry) and the current measured values.

[0013] The method comprises the method step d), in which an output of the

[0014] process step c) and / or storing the temperature determined in process step c) in an electronic memory. The temperature calculated in the previous process step can either be temporarily stored in an electronic memory for further use or immediately output, for example visually or acoustically. An output is possible in cases where the temperature exceeds a certain minimum value. Alternatively, a warning can be issued in cases where a previously defined maximum value is reached. Storage in a memory can be for archiving purposes or these values ​​can be read out during inspection or maintenance. The memory does not have to be a component of the power module, but can also be part of another monitoring system.The values ​​can be used in an integral approach to predict the remaining lifetime of the component or chip.

[0015] In a preferred embodiment of the method, the semiconductor chip can be a piezoelectric semiconductor chip. The method according to the invention is particularly suitable for structures in which the semiconductor chip consists of or contains a piezoelectric material. In this embodiment, the chip itself can be used to determine the natural resonant frequency without additional actuators or sensors. This results in a highly reliable and cost-effective structure, which opens up the possibility of determining the vibration properties of the chip directly without further structures or additional functional parts.

[0016] In a further preferred aspect of the method, the semiconductor chip can be a SiC or GaN semiconductor component. Gallium nitride and silicon carbide semiconductor chips are particularly suitable for determining natural resonant frequencies. Even relatively low excitation voltages result in high mechanical deflections of the chip, which allows for very sensitive calibration of the temperature dependence.

[0017] In a further preferred characteristic of the method, method step b) can be carried out using a MEMS (micro-electro-mechanical system) sensor and / or a MEMS actuator arranged on the semiconductor chip, wherein the MEMS sensor is configured to detect mechanical vibrations of the semiconductor chip and the MEMS actuator is configured to cause the semiconductor chip to vibrate. In addition to the use of piezoelectric semiconductor chips with intrinsic suitability for determining the resonant frequency, non-piezoelectric semiconductor chips can also be used in the method according to the invention. For this purpose, the semiconductor chips are provided with at least one actuator and at least one sensor. The actuator generates a mechanical excitation of the chip at different frequencies, whereas the sensor determines the amplitude of the mechanical deflection of the chip as a function of the applied excitation frequency.This allows the chip's natural resonant frequency to be determined very precisely. MEMS sensors are particularly well-suited for this purpose, as their weight and dimensions minimize disruption to the semiconductor chip's mechanical system.

[0018] In a preferred embodiment of the method, method step b) can be performed using a SAW (surface acoustic wave) sensor arranged on the semiconductor chip, wherein the SAW sensor is configured to detect the mechanical vibrations of the semiconductor chip. The use of a SAW sensor has proven particularly suitable for reliably detecting the vibration response of the semiconductor chip. Even under high temperature fluctuations, the sensor can be used reliably over a long period of time to determine the natural resonant frequency.

[0019] In a preferred characteristic of the method, method step b) can be carried out by measuring the electrical voltage of an electrical resistor arranged on the piezoelectric semiconductor chip, wherein the electrical resistor is electrically connected to the piezoelectric semiconductor chip. Determining the natural resonant frequency via a resistor arranged on a piezoelectric semiconductor chip has proven particularly suitable over long operating periods, even under very strong temperature fluctuations. This arrangement is less prone to errors, robust, and can be implemented cost-effectively with little effort. In these cases, the natural resonant frequency is determined via the maximum of the measured voltage.

[0020] In a further preferred aspect of the method, only voltage values ​​above a specified voltage threshold can be used in method step c). The robustness of the present method can be increased in particular by using only specific voltage values ​​measured on a piezoelectric semiconductor chip with an electrical resistor arranged thereon for the evaluation. In this way, measurement artifacts can be excluded and statistical accuracy increased. Suitable threshold values ​​can, for example, be within a range of greater than or equal to 0% and less than or equal to 70% deviating from measured reference values ​​on reference systems.

[0021] In a further preferred embodiment of the method, only resonance frequencies that lie within a specified resonance frequency range can be used in method step c). For statistically improved detection of the temperature of the semiconductor chip, it may be particularly suitable to use only those natural resonance frequencies that lie within a specified natural resonance frequency range for evaluation. This range can be estimated, for example, during calibration from the recorded calibration data and, depending on the chip size, lies in the range from approximately 100 kHz to the low GHz range.

[0022] In a preferred embodiment of the method, the current mechanical natural resonance frequency can be determined in method step b) using a mechanical impedance measurement. Mechanical impedance is the quotient of driving force and sound velocity and describes the resistance a material offers to mechanical vibration. Using this approach, the natural resonance frequency can be determined very quickly and reliably. By piezoelectrically exciting the semiconductor chip and recording the resulting sound waves with a sensor mounted near the semiconductor chip, the amplitude and propagation time of the emitted sound waves can be calculated, which provide information about the mechanical impedance of the semiconductor chip.

[0023] Furthermore, the invention provides for the use of the method according to the invention for determining the current temperature of a semiconductor chip in an electronic assembly. The method according to the invention is particularly suitable for indirect temperature measurement of semiconductor chips in electronic assemblies of power electronics. The temperatures can be determined very reliably and, in specific cases, without additional equipment under operating conditions.

[0024] Furthermore, the invention relates to a system for determining the current temperature of a semiconductor chip in an electronic assembly, wherein the system comprises at least: i) a semiconductor chip in an electronic assembly; ii) an actuator suitable for exciting mechanical vibrations of the semiconductor chip; iii) a measuring device configured to determine the mechanical natural frequency of the semiconductor chip; iv) an evaluation unit, wherein the evaluation unit is configured to determine a temperature of the semiconductor chip from a stored calibration from the measured mechanical natural frequencies of the semiconductor chip; v) a display and / or memory unit. Surprisingly, it has been found that the temperature of a semiconductor chip in a power module can be determined reliably and reproducibly using the above-mentioned system.The temperature of the semiconductor chip is determined indirectly via its vibration properties, particularly its mechanical natural resonance frequency, which reacts sensitively to temperature changes. Temperature changes in the semiconductor chip lead to changes in the mechanical natural resonance frequency, so that the temperature can be determined based on the mechanical changes for a given chip geometry. A further advantage of the system according to the invention therefore offers the possibility of constant module condition monitoring, which can also be used to determine or predict the remaining service life. Temperature-related, unplanned module failures are avoided, and predictive maintenance is enabled. Furthermore, a cost-effective solution for temperature monitoring of the entire power module in converters is obtained, which can also be used for service life prediction.With regard to the further advantages of the system according to the invention, explicit reference is made to the advantages discussed in the context of the method according to the invention.

[0025] The system comprises i), a semiconductor chip in an electronic assembly. The electronic assembly is, in particular, a power electronic assembly, for example, a power module. An electronic assembly comprises at least one component, in particular a semiconductor device, e.g., a power switch in the form of the semiconductor chip.

[0026] The system comprises ii) an actuator suitable for exciting mechanical vibrations of the semiconductor chip. The semiconductor itself or a component specifically arranged on the semiconductor or in its vicinity is configured to cause the semiconductor chip to vibrate mechanically. The actuator can, for example, be electronically controllable so that it induces different vibration frequencies on the semiconductor chip. Such frequency-controllable actuators include MEMS actuators. The frequency range for inducing the mechanical vibrations by the actuator can, for example, be from 1 kHz to 25 kHz, further preferably from 5 kHz to 20 kHz. Within this frequency range, the mechanical natural resonance frequencies can be determined as a function of temperature for a large group of semiconductor chips.

[0027] The system comprises iii) a measuring device configured to determine the mechanical natural frequency of the semiconductor chip. The measuring device must therefore be suitable for recording the current vibration properties of the semiconductor chip. For this purpose, the measuring device can, for example, measure the current mechanical vibration frequency and the vibration amplitude of the semiconductor chip.

[0028] The system comprises iv), an evaluation unit, wherein the evaluation unit is configured to determine a temperature of the semiconductor chip from a stored calibration based on the measured mechanical natural frequencies of the semiconductor chip. The temperature-natural resonant frequency correlation, which was previously measured on this semiconductor chip or on one or more semiconductor chips of the same power module series, is stored in the evaluation unit. Using the values ​​currently supplied by the measuring device, the currently existing mechanical natural resonant frequency can be determined, and the temperature can be calculated from this. In this respect, the evaluation unit determines both the mechanical natural resonant frequency and the correlation to a temperature value.

[0029] The system comprises v), a display and / or storage unit. The display unit or the storage unit can be directly connected to the evaluation unit. This makes it possible, for example, for the currently measured temperature value to be continuously output via the display unit. Alternatively, it is also possible for the display unit to only show the determined temperature values ​​when required. The display can also be set up to show the result of the evaluation in coded form. This can be in the form of a color coding, for example, which outputs the current temperature of the power module as "normal" or outside of defined specifications as "error". The temperature values ​​as such or values ​​derived from mathematical operations can also be stored in the storage unit and read out, for example, via an interface.The display unit can be located on the housing of the power module or the electronic assembly. However, it is also possible for the display unit to be connected to the evaluation unit or the storage unit via a communication device and not located directly on the power module.

[0030] In a preferred embodiment of the system, the semiconductor chip can be a piezoelectric semiconductor chip. Systems with a piezoelectric semiconductor chip can be particularly suitable in the system according to the invention, since the piezoelectric semiconductor chips themselves can function as an actuator and sensor. In this embodiment, the need to arrange a separate sensor and mechanical actuator on the semiconductor chip is eliminated. In a preferred aspect of the system, the system can have an electrical resistor, wherein the electrical resistor is in electrical contact with the semiconductor chip and the measuring device is configured to measure the electrical voltage across the electrical resistor.The use of a piezoelectric semiconductor chip to determine the mechanical natural resonance frequency can be achieved reliably and without great effort, especially in cases where the vibration excitation and determination of the vibration behavior are carried out via the semiconductor chip itself, and the measuring device taps the voltage output via the electrical resistance. This electrical setup can be implemented reliably and cost-effectively.

[0031] In a further preferred embodiment of the system, the semiconductor chip can have an AC voltage supply, wherein the AC voltage supply is configured to deliver an AC voltage with a frequency greater than or equal to 100 kHz and less than or equal to 10 GHz. The forced mechanical deflection of the semiconductor chip for determining the mechanical natural resonance frequency can preferably be performed by an AC voltage supply tuned to the frequency range specified above. Within this mechanical vibration excitation range, the mechanical natural resonance frequencies can be reliably determined for many semiconductor chip geometries and wide temperature ranges.

[0032] In a preferred system configuration, the AC power supply can be selected from the group consisting of a half-bridge, full-bridge, or high-frequency transformer. The power supplies listed above have proven particularly suitable for reliably and reproducibly generating a stable AC power supply to the semiconductor chip, even under application conditions.

[0033] Examples and embodiments of the present invention will be described by way of example with reference to Figure 1:

[0034] Figure 1 shows a schematic diagram of the structure of a power module and the relationship between mechanical self-resonance frequency and the temperature of the semiconductor chip.

[0035] Figure 1 schematically shows the structure of an electronic assembly 10 and the relationship between the mechanical natural resonance frequency and the temperature of the semiconductor chip 60, 61. The electronic assembly 10 can, for example, be in the form of a power semiconductor module and comprises a lower copper connection 20 and copper conductor tracks 40 separated by a substrate 30. The substrate 30 can be a ceramic substrate 30. A solder 50 is applied to one of the copper conductor tracks 40 on the top side of the substrate 30, which solder fixes the actual semiconductor chip 60, 61 to the copper conductor track 40. The semiconductor chip 60, 61 is electrically connected to another copper conductor track 40 via a bonding wire 70. The semiconductor chip 60, 61 is shown in two operating states. The first operating state of the semiconductor chip 60 is at a temperature T1.Due to the operation of the power module 10, the semiconductor chip 60, 61 heats up and the second operating state of the semiconductor chip 61 is assumed at a higher temperature T2. Due to the increase in temperature, the semiconductor chip 60, 61 expands and changes its mechanical properties. By analyzing the mechanical natural resonance frequency, it can be determined that this changes as a function of temperature. The diagram in this figure shows schematically that the mechanical natural resonance frequency f1 of the semiconductor chip 60 is higher at a lower temperature compared to the mechanical natural resonance frequency f2 of the semiconductor chip 61 at a higher temperature. This results in a clear difference in the mechanical natural resonance frequencies, which can be clearly correlated as a function of temperature. An increase in temperature leads to a lower mechanical

[0036] Natural resonance frequency. By determining the mechanical natural resonance frequency, the current operating temperature of the semiconductor chip 60, 61 can be clearly determined. The mechanical natural resonance frequency of the semiconductor chip 60, 61 can be determined by an actuator (not shown), which causes the semiconductor chip 60, 61 to oscillate mechanically within a defined frequency range. For this purpose, the actuator can be arranged on the semiconductor chip 60, 61, for example. The oscillation frequency and amplitude of the semiconductor chip 60, 61 are then recorded by a measuring device in the form of a oscillation sensor (not shown) on the semiconductor chip 60, 61, and the mechanical natural resonance frequency of the semiconductor chip 60, 61 is determined from the frequency and amplitude values ​​in an evaluation unit (not shown).The evaluation unit can also convert the determined mechanical natural resonance frequency into the corresponding temperature value. The temperature can be output via a display (not shown) or stored in a memory unit (not shown). In cases where the semiconductor chip 60, 61 has piezoelectric properties, it can itself function as an actuator and sensor. By applying an alternating voltage to the semiconductor chip 60, 61, mechanical vibrations of the semiconductor chip 60, 61 can be generated. The properties of the mechanical vibrations of the semiconductor chip 60, 61 can be measured via a voltage measurement on the semiconductor chip 60, 61. The current mechanical natural resonance frequency of the semiconductor chip 60, 61 can also be determined from the measured values. This can then be output or stored.

[0037] List of reference symbols

[0038] 10 electronic assembly

[0039] 20 lower copper connection 30 substrate

[0040] 40 copper conductors

[0041] 50 lots

[0042] 60 low-temperature power semiconductors

[0043] 61 Higher temperature power semiconductors 70 Bonding wire

Claims

Patent claims 1. A method for determining the temperature of a semiconductor chip (60, 61) in an electronic assembly (10), at least comprising the method steps of a) correlating the mechanical natural resonance frequency of the semiconductor chip (60, 61) in the electronic assembly (10) as a function of temperature, wherein the correlation of the mechanical natural resonance frequencies is carried out for a specific structure of the electronic assembly (10) and / or for a specific structure of the semiconductor chip (60, 61); b) determining the current mechanical natural resonance frequency of the semiconductor chip (60, 61) under operating conditions of the electronic assembly (10); c) determining the semiconductor chip temperature from the mechanical natural resonance frequency determined in method step b) using the correlation determined from method step a);d) outputting the temperature determined in process step c) and / or storing the temperature determined in process step c) in an electronic memory; 2. The method according to claim 1, wherein the semiconductor chip (60, 61) is a piezoelectric semiconductor chip.

3. Method according to one of the preceding claims, wherein the semiconductor chip (60, 61) is a SiC or a GaN semiconductor chip.

4. Method according to one of the preceding claims, wherein method step b) is carried out by means of a MEMS (micro-electro-mechanical system) sensor and / or a MEMS actuator arranged on the semiconductor chip (60, 61), wherein the MEMS sensor is configured to detect mechanical vibrations of the semiconductor chip (60, 61) and the MEMS actuator is configured to cause the semiconductor chip (60, 61) to vibrate.

5. The method according to any one of claims 1 to 4, wherein method step b) is carried out by means of a SAW (surface acoustic wave) sensor arranged on the semiconductor chip (60, 61), wherein the SAW sensor is configured to detect the mechanical vibrations of the semiconductor chip (60, 61).

6. The method according to one of claims 2 or 3, wherein the method step b) is carried out by means of an electrical voltage measurement of a sensor connected to the piezoelectric semiconductor chip (60, 61). arranged electrical resistance, wherein the electrical resistance is in an electrically conductive connection to the piezoelectric semiconductor chip (60, 61).

7. The method according to claim 6, wherein in method step c) only voltage values ​​are used which are above a specified voltage threshold value.

8. Method according to one of claims 6 or 7, wherein in method step c) only resonance frequencies are used which lie within a specified resonance frequency range.

9. Method according to one of the preceding claims, wherein the determination of the current mechanical natural resonance frequency in method step b) is carried out via a mechanical impedance measurement.

10. Use of a method according to one of the preceding claims for determining the current temperature of a semiconductor chip (60, 61) in an electronic assembly (10).

11. System for determining the current temperature of a semiconductor chip (60, 61) in an electronic assembly (10), characterized in that the system comprises at least i) a semiconductor chip (60, 61) in an electronic assembly (10); ii) an actuator suitable for exciting mechanical vibrations of the semiconductor chip (60, 61); iii) a measuring device configured to determine the mechanical natural frequency of the semiconductor chip (60, 61); iv) an evaluation unit, wherein the evaluation unit is configured to determine a temperature of the semiconductor chip (60, 61) from a stored calibration from the measured mechanical natural frequencies of the semiconductor chip (60, 61); v) a display and / or memory unit.

12. The system of claim 11, wherein the semiconductor chip (60, 61) is a piezoelectric semiconductor chip.

13. The system of claim 11, wherein the system comprises an electrical resistor, wherein the electrical resistor is in electrical contact with the semiconductor chip (60, 61) and the measuring device is designed to measure the electrical voltage at the electrical resistance.

14. System according to one of claims 12 to 13, wherein the semiconductor chip (60, 61) has an AC voltage supply, wherein the AC voltage supply is configured to supply an AC voltage having a frequency of greater than or equal to 100 kHz and less than or equal to 10 GHz.

15. The system of claim 14, wherein the AC power supply is selected from the group consisting of half bridge, full bridge, or high frequency transformer.

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