Conductive structure comprising ceramic layer, and device comprising same

Abstract

A conductive structure comprising a ceramic layer, and a device thereof are provided. The conductive structure comprises a metal layer and a ceramic layer, which is disposed on the metal layer and includes copper (Cu), phosphorus (P), sulfur (S), lead (Pb) and oxygen (O). The electrical conductivity of the conductive structure can be greater than that of the metal layer at a temperature of -10 to 40 °C under a pressure of 0.5 to 5 atm.

Description

Conductive structure including a ceramic layer and device including the same

[0001] The present disclosure relates to a conductive structure and device comprising a ceramic compound, a ceramic layer comprising the ceramic compound.

[0002] In order to address the recently emerging environmental and energy issues and to resolve the problem of reduced efficiency resulting from the high integration / density of semiconductors, new materials are being demanded instead of conductive materials such as copper and gold.

[0003] The limitations in the application of the conductive properties of metallic materials such as copper, gold, and silver are due to the fundamental characteristic of metals, namely, their ability to oxidize easily in air, and various surface treatment methods such as covering and coating agents are used.

[0004] There is a need for the development of low-resistance materials with chemical durability at room temperature under atmospheric pressure, and this need is expected to be applicable to various applications that require solutions to the problems of heat generation and corrosion due to resistance arising from power generation, power conversion, and power transmission, as well as wiring due to high integration, and electrode reactions in water.

[0005] An exemplary embodiment provides a ceramic compound having excellent electrical conductivity and a conductive structure including the same.

[0006] An exemplary embodiment provides a cable comprising a conductive structure having excellent electrical conductivity.

[0007] An exemplary embodiment provides a power semiconductor module including a conductive structure having excellent electrical conductivity.

[0008] The problems to be solved by one embodiment are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the art from this specification and the attached drawings.

[0009] According to one embodiment, a conductive structure comprises a metal layer; a ceramic layer disposed on the metal layer and containing copper (Cu), phosphorus (P), sulfur (S), lead (Pb), and oxygen (O); and at a temperature of -10°C or more and 40°C or less and a pressure of 0.5 atm or more and 5 atm or less, an electrical conductivity of the conductive structure is greater than an electrical conductivity of the metal layer.

[0010] And, the electrical conductivity of the conductive structure may be 10% or more higher than the electrical conductivity of the metal layer.

[0011] In addition, the electrical conductivity of the conductive structure is 10 4 It can exceed s / cm.

[0012] And, the surface of the metal layer that comes into contact with the ceramic layer can be surface-treated with an acidic substance.

[0013] Additionally, the acidic substance may include at least one of phosphoric acid, nitric acid, sulfuric acid, and acetic acid.

[0014] And, at least one of the phosphoric acid group and the sulfuric acid group included in the ceramic layer can ionically bond with the metal layer.

[0015] Additionally, the thickness of the ceramic layer may be 1 / 5 or less of the thickness of the metal layer.

[0016] And, the ceramic layer may have a specific gravity of 1 / 3 or less of the metal layer.

[0017] Additionally, the specific gravity of the ceramic layer may be 3 g / ml or more and 7 g / ml or less.

[0018] And, the metal layer may include at least one of aluminum (Al), silicon (Si), iron (Fe), copper (Cu), manganese (Mn), magnesium (Mg), chromium (Cr), and zinc (Zn).

[0019] In addition, the metal layer may include a cylindrical shape extending in the first direction, and the ceramic layer may include a shell shape surrounding an outer surface of the metal layer.

[0020] And, it may further include an insulating layer surrounding the outer surface of the metal layer.

[0021] In addition, the metal layer includes a cylindrical core metal layer extending in the first direction and a plurality of shell metal layers in a shell shape, and the ceramic layer includes a plurality of shell ceramic layers in a shell shape, and the plurality of shell ceramic layers and the plurality of shell metal layers can alternately wrap the outer surface of the core metal layer one by one.

[0022] And, the above ceramic layer is lead phosphate apatite (Pb 10 (PO4)6O) crystal structure and may include an apatite compound in which lead is partially substituted with copper within the crystal structure.

[0023] Additionally, the apatite compound may have at least one of phosphorus and oxygen partially substituted with sulfur.

[0024] And, the ceramic layer may contain less than 1 wt% of copper sulfide.

[0025] Additionally, the ceramic layer may contain less than 4 wt% of lead sulfide.

[0026] And, the ceramic layer may include a compound represented by the following chemical formula.

[0027] (chemical formula) Pb 10-x-v Cu (x+v) (PO4) 6-y (SO4) y O z-w S w (But, 0 <x<4, 0≤v≤6, 0.9≤x+v≤9.9, 0<y<3, 0<z≤4, 및 0<w≤z).

[0028] A cable according to one embodiment may include a conductor including one or more of the conductive structures described above; an inner semiconductive layer disposed on an outer side of the conductor; an insulating layer disposed on an outer side of the inner semiconductive layer; an outer semiconductive layer disposed on an outer side of the insulating layer; a shielding layer disposed on an outer side of the outer semiconductive layer; and a cable jacket disposed on an outer side of the shielding layer.

[0029] A power semiconductor module according to one embodiment comprises: an insulating layer; a power semiconductor disposed on the insulating layer; a conductive layer disposed between the insulating layer and the power semiconductor and electrically connected to the power semiconductor; a power terminal electrically connected to the conductive layer to provide power to the power semiconductor; and a molding part disposed on the insulating layer and burying the power semiconductor; wherein at least one of the conductive layer and the power terminal may include the conductive structure described above.

[0030] Figure 1a shows the lead phosphate apatite (LPA) crystal structure viewed along the c-axis.

[0031] Figure 1b is an enlarged view of a portion of Figure 1a.

[0032] Figure 1c is a perspective view of a region of the lead phosphate apatite crystal structure.

[0033] FIG. 2 is a schematic diagram illustrating a crystal structure of an apatite compound containing copper and sulfur according to one embodiment.

[0034] Figure 3 is a schematic perspective view illustrating the channels of the apatite crystal structure.

[0035] FIG. 4 is a schematic cross-sectional view illustrating a vacuum tube used to manufacture a conductive ceramic material according to one embodiment.

[0036] FIG. 5 is a schematic cross-sectional view illustrating a degassing device used to manufacture a conductive ceramic material according to one embodiment.

[0037] Figure 6 is an XRD graph of a conductive ceramic material of Comparative Example 1 including an apatite compound manufactured according to a conventional technique.

[0038] Figure 7 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 1.

[0039] Figure 8 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 2.

[0040] Figure 9 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 3.

[0041] Figure 10 is an XRD graph of a ceramic material according to Comparative Example 2.

[0042] Figure 11 is an XRD graph of a ceramic material according to Comparative Example 3.

[0043] Fig. 12 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 4.

[0044] Fig. 13 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 5.

[0045] Fig. 14 is an SEM photograph of a conductive ceramic material including an apatite compound according to Example 1.

[0046] Figure 15 is a SEM-EDS photograph of a conductive ceramic material including an apatite compound according to Example 1.

[0047] Figure 16 is a STEM (scanning transmission electron microscopy) image of a conductive ceramic material including an apatite compound according to Example 1, (b) being an enlarged image of (a).

[0048] FIG. 17 is a SAED (selected area electron diffraction) image of a conductive ceramic material including an apatite compound according to Example 1.

[0049] FIG. 18 is a diagram showing a wide scan XPS spectrum of a conductive ceramic material including an apatite compound according to Example 1.

[0050] FIGS. 19 to 23 are drawings showing narrow scan XPS (x-ray photoelectron spectroscopy) spectra of conductive ceramic materials including an apatite compound according to Example 1.

[0051] FIG. 24 is a cross-sectional view of a conductive structure including a ceramic compound according to one embodiment.

[0052] FIG. 25 is a drawing illustrating a line-shaped conductive structure according to one embodiment.

[0053] Fig. 26 is a drawing illustrating a conductive structure according to another embodiment.

[0054] FIG. 27 is a drawing illustrating a conductive structure including an insulating layer according to one embodiment.

[0055] Figure 28 is a scanning electron microscope (SEM) photograph of the surface of a metal layer before a ceramic layer is formed according to one embodiment.

[0056] Figure 29 is a scanning electron microscope (SEM) photograph of the surface of a conductive structure having a ceramic layer formed thereon according to one embodiment.

[0057] FIG. 30 is a scanning electron microscope (SEM) photograph of a cross-section of a conductive structure according to one embodiment.

[0058] FIG. 31 is a scanning electron microscope (SEM) photograph of the surface of a ceramic layer of a conductive structure according to one embodiment.

[0059] Fig. 32 is an IV graph for explaining the electrical characteristics of a conductive structure according to one embodiment.

[0060] Fig. 33 is a current-temperature graph for explaining the heating characteristics of a conductive structure and a metal layer according to one embodiment.

[0061] FIG. 34 is a drawing illustrating a cable including a conductive structure according to one embodiment.

[0062] FIG. 35 is a diagram illustrating a power semiconductor module including a conductive structure according to one embodiment.

[0063] FIG. 36 is a diagram illustrating a solar cell array including a conductive structure according to one embodiment.

[0064] Hereinafter, exemplary embodiments will be described in detail with reference to the attached drawings. In the drawings below, like reference numerals designate like components, and the sizes of each component in the drawings may be exaggerated for clarity and convenience. The embodiments described below are merely exemplary, and various modifications are possible from these embodiments.

[0065] Hereinafter, the terms "upper" or "upper" may include not only things that are directly above, below, left, or right in contact, but also things that are above, below, left, or right in non-contact. Singular expressions may include plural expressions unless the context clearly indicates otherwise. Alternatively, when it is said that a part may "include" a component, this may mean that it may include other components, rather than excluding other components, unless otherwise specifically stated.

[0066] The use of the term "above" and similar referential terms may refer to both the singular and the plural. Unless the steps of a method are explicitly stated or contradicted, the steps may be performed in any order, and the order stated is not necessarily limited to that order.

[0067] Alternatively, terms such as “unit”, “module”, etc. described in the specification mean a unit that processes at least one function or operation, which may be implemented as hardware or software, or a combination of hardware and software.

[0068] The lines connecting or disconnecting between components depicted in the drawings are merely representative of functional connections and / or physical or circuit connections, and may be replaced or represented as various additional functional connections, physical connections, or circuit connections in an actual device.

[0069] Expressions such as "at least one" preceding a list of elements qualify the entire list of elements, not individual elements within the list. For example, expressions such as "at least one of A, B, and C" or "at least one selected from the group consisting of A, B, and C" could be interpreted as A alone, B alone, C alone, or any combination of two or more of A, B, and C, such as ABC, AB, BC, and AC.

[0070] When "about" or "substantially" is used in connection with a numerical value, the relevant numerical value may be interpreted to include a manufacturing or operating variance (e.g., ±10%) around the stated numerical value. Alternatively, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it may be intended that geometrical precision is not required and that a tolerance for the shape is within the scope of the present invention. Alternatively, regardless of whether a numerical value or shape is defined as "about" or "substantially," such values ​​and shapes may be interpreted to include a manufacturing or operating variance (e.g., ±10%) around the stated numerical value.

[0071] Terms such as "first" and "second" may be used to describe various components, but the components themselves may not be limited by these terms. These terms may only be used to distinguish one component from another.

[0072] Any use of examples or exemplary terms is merely intended to elaborate technical ideas and is not intended to limit the scope of the invention unless otherwise defined by the claims.

[0073] Hereinafter, with reference to the attached drawings, a detailed description will be given by way of example only.

[0074] Figure 1a shows the lead phosphate apatite (LPA) crystal structure as viewed from the c-axis, Figure 1b is an enlarged view of a portion of Figure 1a, and Figure 1c is a perspective view of a portion of the lead phosphate apatite crystal structure. Here, Figures 1b and 1c each show two unit cells overlapping in the c-axis direction.

[0075] Referring to FIGS. 1a, 1b, and 1c, the lead phosphate apatite crystal structure is composed of lead (Pb), phosphorus (P), and oxygen (O), and the unit cell is made of 10 elements in the metal sites where Pb can be located, 6 elements in the sites surrounded by four oxygens where phosphorus can be located, 24 oxygens surrounding the phosphorus, and 1 channel oxygen. Lead has two different sites within the crystal structure. The first site (Pb(I)) is arranged alternately in the c-axis direction along the edges of the unit cell in a triangle-like manner, and the second site (Pb(II)) is located within the region surrounded by the edges of the unit cell. As the leads located at the first site are arranged in the c-axis direction forming a triangle, c-axis-directed channels are formed at the four corners of the unit cell, as illustrated in FIG. 1b.

[0076] Oxygen also has two different sites, the first site (O(I)) is arranged around phosphorus to form a regular tetrahedron, and the second site (O(II)) is located in the channel formed by lead. In Fig. 1c, one oxygen is positioned at each of the four corners parallel to the c-axis, and the sites where these oxygens are positioned correspond to the second site (O(II)). For convenience of explanation, the oxygen at the second site (O(II)) is also referred to as the "channel oxygen" hereinafter. Fig. 1c shows one channel oxygen at each corner, and there are four sites where the channel oxygen can be positioned at each corner in the unit cell. Fig. 1c is a diagram in which two unit cells are overlapped, and in the drawing of Fig. 1c, there are eight sites where the channel oxygen can be positioned at each corner.

[0077] Lead phosphate apatite is known to be non-conductive, and can be modified to have conductivity by doping lead phosphate apatite with other elements. Lead phosphate apatite modified to have conductivity in this way is referred to as modified lead apatite (Modified Lead Apatite: MLA). In one embodiment, lead phosphate apatite modified to have conductivity using a chalcogen and a metal element is referred to as Modified Apatite by Chalcogen and Metal (MACAM). In one embodiment, sulfur is used as the chalcogen element and copper is used as the metal element, and the structure of MACAM according to one embodiment will be described with reference to FIGS. 2 and 3.

[0078] FIG. 2 is a schematic crystal structure illustrating an apatite compound containing copper and sulfur according to one embodiment, and FIG. 3 is a schematic perspective view illustrating a channel of an apatite crystal structure. Here, FIG. 2 shows the crystal structure as viewed from the c-axis direction.

[0079] Referring to FIGS. 2 and 3, copper can substitute for lead in the first position (P(I)) and / or the second position (P(II)). Depending on the position where copper substitutes for lead, the first position (Cu(I)) and the second position (Cu(II)) of copper are indicated. Meanwhile, sulfur can occupy the position of phosphorus and the position of oxygen. In particular, sulfur can substitute for oxygen in the second position (O(II)), i.e., channel oxygen. Among the positions where sulfur is located, the position corresponding to the position of phosphorus is indicated as the first position (S(I)), and the position corresponding to the channel oxygen is indicated as the second position (S(II)). Sulfur in the second position can be referred to as channel sulfur.

[0080] The copper and / or lead in the first position form triangles, and multiple triangles are arranged along the c-axis. The arrangement of these metal elements forms channels, as indicated by the bold arrows in Fig. 3. The channels are formed along the four corners of the unit cell.

[0081] In one embodiment, an apatite compound exhibits conductivity by substituting copper and sulfur for lead and phosphorus. The substitution of copper and sulfur generates free charges within the compound, and these free charges will exhibit conductivity. The generated charges are thought to move through channels created by lead and copper. These channels are formed in one direction along the c-axis, giving them a one-dimensional shape, but since they have a cross-sectional area, they can be referred to as having a pseudo-1-dimensional shape. The direction of energy transfer of charges flowing through the channel can interact in the cross-sectional direction within the channel, but the direction of total mechanical energy transfer will generally be along the longitudinal direction of the channel, the c-axis.

[0082] In the case of manufacturing an apatite compound by a solid-state reaction according to a conventional technique, a ceramic material including an apatite compound was manufactured by mixing ranakite (Pb2SO5) and Cu3P as raw materials in a ratio of 1:1 and firing them in a quartz vacuum tube. However, the ceramic material manufactured by the conventional technique contains copper sulfide, especially, Cu 2-x The ceramic material contains S impurities at approximately 30% or more of the total weight of the entire crystalline compound, and also contains impurities such as PbS. These impurities are inevitably generated by the raw materials. Accordingly, the amount of apatite compounds in the ceramic material is relatively small, and furthermore, it is difficult to precisely determine the composition of the apatite compounds contained in the ceramic material.

[0083] In the examples, Cu 2-xTo prevent the formation of S impurities, copper and phosphorus are used directly instead of Cu3P as raw materials for copper and phosphorus. That is, Cu is used as the main raw material for copper, and P is used as the main raw material for phosphorus. CuSO4 may also be added as the main raw material for copper. Furthermore, to reduce the formation of PbS impurities, PbO and PbSO4 are used as the main raw materials for Pb instead of ranakite.

[0084] When P is used as the main raw material, the process of converting SO42- to PO43- is included, and in this reaction, the possibility of generating PO4-aSa cannot be ruled out due to the nature of the thermal reaction, so Pb 10-x' Cu x' (P(O y' S 4-y' ) 6- y(SO4)y)O z-w S w go It can be created. Here, 0.1≤x'≤9.9, 0 <y<3, 0.001≤y'≤4, 0<z≤4, 및 0<w≤z 이다

[0085] Instead of using elements with a high copper content, such as Cu3P, as the main raw material for copper, by using Cu or CuSO4, the amount of Cu remaining after the reaction can be significantly reduced, and accordingly, Cu 2-x S can prevent the creation of impurities.

[0086] The reaction formula of the apatite compound according to one embodiment can be roughly expressed by the following reaction formula 1.

[0087]

[0088] Here, 0 <x<4, 0≤v≤6, 0.9≤x+v≤9.9, 0<y<3, 0<z≤4, 및 0<w≤z이다.

[0089] According to the above reaction formula 1, when the raw materials are mixed, vacuum-sealed, and subjected to a solid-state reaction at a temperature range of 500°C to 1000°C, an apatite compound is generated, and SO2 and S remain. By using the above raw materials, the amount of copper or lead remaining other than the apatite compound is reduced, resulting in Cu 2-x Impurities such as copper sulfides such as S and lead sulfides such as PbS are reduced.

[0090] In the above reaction formula 1, the molar ratio of the raw materials is (PbO: PbSO4: Cu: CuSO4: P) = ((4-x): (6-v): x: v: (6-y)), where x, v, and y are 0. <x<4, 0≤v≤6, 및 0<y<3일 수 있다. 이 범위 내에서 구리황화물이나 PbS 등의 불순물을 감소시키고 아파타이트계 화합물의 순도를 높일 수 있다. 나아가, 구리의 원료로서 CuSO4도 제외될 수도 있으며, 이에 따라, 결정성이 양호한 아파타이트계 화합물을 얻을 수 있다.

[0091] FIG. 4 is a schematic cross-sectional view illustrating a vacuum tube (20) used to manufacture a conductive ceramic material according to one embodiment, and FIG. 5 is a schematic cross-sectional view illustrating a degassing device (30) used to manufacture a conductive ceramic material according to one embodiment.

[0092] First, referring to Fig. 4, the mixture (21) prepared by quantifying and mixing the reaction raw materials described above is placed in a vacuum tube (20) and sealed. The vacuum tube (20) can be formed of, for example, quartz. The pressure inside the vacuum tube (20) is, for example, 10 -2 It may be lower than mTorr. For example, the pressure inside a vacuum tube (20) is about 10 -3 It could be mTorr.

[0093] A vacuum tube (20) is heated in a high-temperature furnace to allow a solid-state reaction to occur for 10 to 30 hours at a temperature range of, for example, 500°C to 1000°C, thereby synthesizing an apatite-based compound. Subsequently, the resulting product containing the synthesized apatite-based compound is separated from the vacuum tube (20). The resulting product can be separated by breaking the vacuum tube (20). At this time, SO2 and the like are released in a gaseous state, and S8 is applied to the inner wall of the vacuum tube (20).

[0094] The resultant separated from the vacuum tube (20) can be crushed and placed in a crucible (41) and placed in a degassing device (30) as shown in FIG. 5. The degassing device (30) can include a furnace (33) capable of vacuum pumping an exhaust port (37) and a heating wire (31) for heating the furnace (33). Both ends of the furnace (33) can be sealed with sealing plugs (35), and an exhaust port (37) can be provided at one end. A crucible (41) containing the resultant is placed inside the furnace (33), and sealing plugs (35) are placed at both ends. By setting the vacuum level of the furnace (33), the gas generated inside the furnace (33) is discharged by a vacuum pump. The furnace (33) can be heated to a temperature of 300°C to 1000°C and maintained for 3 to 24 hours, thereby vaporizing and degassing sulfur from the resultant product placed in the crucible (41).

[0095] Accordingly, a conductive ceramic material including an apatite compound is manufactured. The apatite compound is lead phosphate apatite (Pb 10 (PO4)6O) crystal structure, and contains copper and sulfur that partially substitute for lead, phosphorus and oxygen, respectively, within the crystal structure.

[0096] An apatite compound according to one embodiment may be represented, for example, by the following chemical formula 1.

[0097] (Chemical formula 1)

[0098] Pb 10-x-v Cu(x+v) (PO4) 6-y (SO4) y O z-w S w (But, 0 <x<4, 0≤v≤6, 0.9≤x+v≤9.9, 0<y<3, 0<z≤4, 및 0<w≤z).

[0099] In one embodiment, v may be 0 and x may be less than 3.

[0100] (XRD analysis)

[0101] Figure 6 is an XRD graph of a conductive ceramic material of Comparative Example 1 containing an apatite compound manufactured according to a conventional technique. The conductive ceramic material of Comparative Example 1 is manufactured by mixing ranakite and Cu3P at a molar ratio of 1:1 according to a conventional technique.

[0102] Referring to Figure 6, in addition to the peak of the apatite compound, Cu 2-x S peak is observed. Cu 2-x The peak of S appears in the range of 30 to 40 degrees.

[0103] Figure 7 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 1. To manufacture the conductive ceramic material of Example 1, PbO, PbSO4, Cu, and P were used as raw materials, and the molar ratio of the raw materials PbO: PbSO4: Cu: P was 3: 6: 1: 6. That is, in the left-hand side of the above reaction formula 1, v and y are 0, x is 1 (i.e., 1 mole of Cu), and the molar ratio of P to sulfur in the reaction raw materials is 1.

[0104] The raw materials were mixed and placed in a vacuum tube, the vacuum tube was heated to synthesize an apatite compound, the resulting product was separated from the vacuum tube, and a degassing device was used to vaporize and discharge gases such as sulfur from the resulting product, thereby obtaining a conductive ceramic material.

[0105] Referring to Fig. 7, compared to the XRD graph of Fig. 6, Cu 2-xNo S peak is observed, and the peak of the apatite compound is clearly observed. That is, it can be seen that the conductive ceramic material manufactured according to Example 1 contains a high-purity apatite compound.

[0106] Fig. 8 is an XRD graph of a conductive ceramic material including an apatite-based compound according to Example 2. Example 2 is a conductive ceramic material including an apatite-based compound manufactured under the same conditions as Example 1 except that x was set to 2 (i.e., 2 mol of Cu).

[0107] Referring to Figure 8, even when the amount of Cu is increased to 2 mol, the peak of the apatite compound is clear and Cu 2-x No S peak is observed.

[0108] Fig. 9 is an XRD graph of a conductive ceramic material including an apatite-based compound according to Example 3. Example 3 is a conductive ceramic material including an apatite-based compound manufactured under the same conditions as Example 1 except that x was set to 3 (i.e., 3 mol of Cu).

[0109] Referring to Figure 9, even when the amount of Cu is increased to 3 mol, the peak of the apatite compound is clear and Cu 2-x No S peak is observed.

[0110] Figure 10 is an XRD graph of a ceramic material according to Comparative Example 2. The ceramic material of Comparative Example 2 was manufactured under the same conditions as Example 1 except that y was set to 4.5 (the molar ratio of P to S was 0.25).

[0111] Referring to Figure 10, no peak of the apatite compound is observed, and many peaks are observed in the range of 30 to 40 degrees, indicating that a relatively large amount of impurities are produced.

[0112] Figure 11 is an XRD graph of a ceramic material according to Comparative Example 3. The ceramic material of Comparative Example 3 was manufactured under the same conditions as Example 1 except that y was set to 3 (the molar ratio of P to S was 0.5).

[0113] Referring to Figure 11, although peaks of apatite compounds are observed, many peaks are observed in the range of 30 to 40 degrees, indicating that relatively many impurities were produced.

[0114] Fig. 12 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 4. The ceramic material of Example 4 was manufactured under the same conditions as Example 1 except that y was set to 1.5 (the molar ratio of P to S was 0.75).

[0115] Referring to FIG. 12, the conductive ceramic material of Example 4 shows a peak of an apatite compound, and also, no peak of an impurity is clearly observed in the range of 30 to 40 degrees.

[0116] Figure 13 is an XRD graph of a conductive ceramic material including an apatite compound according to Example 5. The ceramic material of Example 5 was manufactured under the same conditions as Example 1 except that y was set to 0.6 (the molar ratio of P to S was 0.9).

[0117] Referring to FIG. 13, the conductive ceramic material of Example 5 shows a sharper peak of an apatite compound compared to the conductive ceramic material of Example 4, and also, the peak of an impurity is not clearly observed in the range of 30 to 40 degrees.

[0118] Comparing Figures 10 to 13, when synthesizing an apatite compound, if the molar ratio of P to S in the raw material is 0.5 or less, the apatite compound is not synthesized well and many impurity crystals are formed. On the other hand, the purity of the apatite compound can be increased by increasing the molar ratio of P used as a raw material to S to greater than 0.5. In order to reduce impurities and increase the purity of the apatite compound, the molar ratio of P to S must be greater than 0.5.

[0119] (Elemental composition and crystal structure analysis)

[0120] FIG. 14 is an SEM photograph of a conductive ceramic material including an apatite-based compound according to Example 1, and FIG. 15 is an SEM-EDS photograph of a conductive ceramic material including an apatite-based compound according to Example 1.

[0121] As shown in Fig. 14, crystals exist in a powder form within the manufactured conductive ceramic material. Fig. 15 is a SEM-EDS photograph of the first particle (G1) and its surroundings of Fig. 14, and it can be confirmed that the first particle (G1) is composed of elements such as Pb, Cu, P, S, and O. SEM-EDS analysis was also performed on the second particle (G2) and the third particle (G3), and the same elements were detected. C in Fig. 15 is an element detected during the sample pretreatment process.

[0122] Fig. 16 is a STEM (scanning transmission electron microscopy) image of a conductive ceramic material including an apatite compound according to Example 1, (b) being an enlarged image of (a). Fig. 16 is a STEM image of the first particle (G1), showing a plane perpendicular to the

[0011] direction. The atomic arrangement of the copper-doped lead apatite compound by simulation is superimposed on the upper left part of the image of Fig. 16(a).

[0123] Referring to Fig. 16, it can be seen that the atoms in the first particle (G1) are arranged in the same manner as in copper-doped lead apatite.

[0124] Figure 17 shows a selected area electron diffraction (SAED) image of a conductive ceramic material including an apatite compound according to Example 1, along with a simulated SAED image. The SAED image in Figure 17 is also a picture of the first particle (G1).

[0125] Referring to FIG. 17, it can be confirmed that the diffraction pattern of the apatite compound according to Example 1 matches the simulated diffraction pattern of the copper-doped apatite compound.

[0126] Fig. 18 shows a wide scan XPS spectrum of a conductive ceramic material including an apatite-based compound according to Example 1, and Figs. 19 to 23 show narrow scan XPS (x-ray photoelectron spectroscopy) spectra of a conductive ceramic material including an apatite-based compound according to Example 1. ULVAC-PHI's x-TOOL was used as the XPS equipment, and Al Kα was used as the x-ray source. The x-ray beam size was 100 μm, and the vacuum degree was 6.7x10 -7 It was made to be less than Pa. The maximum beam current of the Ar sputter gun was made to be 5.0 μA or more at 5 kV.

[0127] XPS analysis can be used to identify the bonding structure of elements in apatite compounds. A wide scan measures the spectra of all elements in the sample to identify them, while a narrow scan calculates the content of each element. The narrow scan was performed three times for each element, and Figures 19 to 23 show the first narrow scan images for each element.

[0128] Referring to Figures 18 to 23, it can be seen that the apatite compound is composed of Pb, Cu, P, S, and O. Also, referring to Figure 22, oxygen (O 1s ), it is difficult to separate the spectrum because the difference in binding energy between the oxygen of the tetrahedron surrounding phosphorus and sulfur and the oxygen of the channel is not large. However, the number of moles of oxygen forming the tetrahedron is significantly greater than the amount of channel oxygen. Meanwhile, referring to Figure 23, S 2p It can be seen that the binding energy of S has two distinct peaks, indicating that S has two sites. When analyzing the binding energy of S, it can be seen that S exists in the form of SO4 in the site of phosphorus located within a regular tetrahedron surrounded by oxygen, and also exists as channel sulfur by being positioned in the site of channel oxygen.

[0129] The atomic % and average values ​​of each apatite compound element calculated using the values ​​measured through three narrow scans are summarized in Table 1 below.

[0130] Scan #1Scan #2Scan #3AveragePb 4fAtomic%16.7805217.1479616.1674616.70Cu 2pAtomic%8.8434528.9310056.599038.12P 2p(PO4)Atomic%11.8201713.7311316.1420313.93S 2p(SO4)Atomic%1.2052291.5430981.2219741.33S 2p(MS)Atomic%1.4689752.251042.7308212.16O 1s(PO4+SO4)atom%59.8816556.3957757.1386857.76

[0131] From the atomic % of each element above, the molar ratio of metal elements (Pb and Cu), the molar ratio of P and S located within the oxygen tetrahedron, and the molar ratio of sulfur within the channel and total O were calculated, and the number of moles in the apatite compound was calculated from these, and these are summarized in Table 2 below.

[0132] Scan #1Scan #2Scan #3AverageNumber of moles in compoundPb 4f0.6548760.657540.7101430.6736.73 (Avg*10)Cu 2p0.3451240.342460.2898570.3273.27 (Avg*10)P 2p(PO4)0.9074710.8989740.9296260.9125.47 (Avg*6)S 2p(SO4)0.0925290.1010260.0703740.0880.53 (Avg*6)S 2p(MS)0.0239440.0383830.0456130.0360.90 (Avg*25)O 1s0.9760560.9616170.9543870.96424.10 (Avg*25)

[0133] From Table 2 above, the apatite compound obtained by Example 1 is approximately Pb 5.73 Cu 3.27 (PO4) 5.47 (SO4) 0.53O0.1 S 0.9can be expressed as. Although the chemical formula above may be somewhat inaccurate due to impurities, as will be described in detail below, the ceramic material manufactured in Example 1 contains apatite compounds in high purity, and the content of impurities is relatively very small. Therefore, the composition formula of the obtained apatite compound will not deviate significantly from the chemical formula above. In addition, it can be seen from the above results that even if the raw material of P is sufficiently used, the form of SO4 remains, and also it can be seen that a significant amount of S remains as channel sulfur. Overall, the number of moles of sulfur is smaller than the number of moles of phosphorus, and further, it can be seen that the number of moles of channel sulfur is larger than the number of moles of sulfur surrounded by a regular tetrahedron of oxygen. In order to compare the amount of impurity compounds in the apatite compound according to the amount of P in the reaction raw material, XRF (x-ray fluorescence) component analysis and XRD (x-ray diffraction) Rietveld analysis were performed on the samples of Comparative Examples 2 and 3 and Examples 4 and 5, and this will be described. Samples of Comparative Examples 2 and 3, Examples 4 and 5 were produced with 0.25 mol, 0.5 mol, 0.75 mol and 0.9 mol of phosphorus per 1 mol of sulfur in the raw material, respectively, and all other process conditions were the same.

[0134] (XRF analysis)

[0135] XRF analyzes the elemental composition by irradiating X-rays to excite electrons in the inner orbit, and then using the fluorescence emitted when electrons in the outer orbits fill the inner orbits. With the exception of oxygen, XRF analysis was able to analyze Pb, Cu, P, and S, and the analyzed weight % for these is summarized in Table 3 below. Dividing the weight % value of each element below by its atomic weight can be used to calculate the number of moles of each element contained in 100 g of a sample.

[0136] Atomic weight Comparative Example 2 Comparative Example 3 Example 4 Example 5 Pb 2 0 7.2 8 9.7 wt% 89 wt% 89.7 wt% 89 wt% Cu 6 3.5 4 6 1.6 wt% 1.55 wt% 2.88 wt% 3.46 wt% P 3 0.9 7 4 1.82 wt% 3.56 wt% 4.31 wt% 5.59 wt% S 3 2.0 6 6.84 wt% 5.9 wt% 3.09 wt% 1.94 wt%

[0137] Referring to Table 3, it can be seen that in Comparative Examples 2 and 3, the weight % of phosphorus is smaller than the weight % of sulfur, whereas in Examples 4 and 5, the weight % of phosphorus is larger than the weight % of sulfur. Since the atomic weight of P is slightly smaller than the atomic weight of sulfur, the above trend is the same even if the weight % is converted to the number of moles. That is, in Comparative Examples 2 and 3, the number of moles of P is smaller than the number of moles of sulfur, whereas in Examples 4 and 5, the number of moles of phosphorus is larger than the number of moles of sulfur. (XRD Rietveld analysis) The amount of crystalline compounds in a sample can be confirmed through Rietveld analysis. The crystalline compounds and weight % confirmed through XRD Rietveld analysis are summarized in Table 4.

[0138] Comparative Example 2 Comparative Example 3 Example 4 Example 5 Anglesite(I): 51.9wt% Lanarkite: 30.9wt% Pb(SO4): 3.2wt% Minium: 5.9wt% Anglesite(II): 3.0wt% Copper sulfate: 1.4wt% Pb2(P2O7): 3.6wt% Eulytite:: 15.9wt% Anglesite(I): 6.8wt% Anglesite(II): 27.3wt% Apatite: 44.4 wt% Villamaninite: 3.8% Minium: 1.6% Apatite: 72.9wt% Galena: 3.17wt% Anglesite: 18.4wt% Pb3(PO4)2: 5.6wt% Apatite: 96.8%Galena(I): 2.0wt%Galena: 1.2wt%

[0139] Referring to Table 4, in Comparative Example 2 where 0.25 mol of P was mixed for 1 mol of sulfur in the raw material, no apatite compound was detected, and in Comparative Examples 2 and 3 or Examples 4 and 5, Cu was detected through Rietveld analysis. 2-x No impurities of S were detected. Meanwhile, in Comparative Example 3, the apatite-based compound was less than 50% at 44.4% of the total weight of the entire crystalline compound. In contrast, in Examples 4 and 5, the apatite-based compound was 72.9% and 96.8% of the total weight of the entire crystalline compound. From these results, it can be seen that when P is mixed in an amount of generally 0.6 mol or more per 1 mol of sulfur, the apatite-based compound can be included in the manufactured ceramic material at 50 wt% or more of the total crystalline compound. In addition, when the amount of P in the raw material is increased to 0.9 mol or more, the amount of the apatite-based compound included in the ceramic material can be increased to 95 wt% or more. Meanwhile, the amounts of P and S contained in the impurities can be calculated from the amounts of impurities detected through Rietveld analysis, and the ratio of P and S in the apatite-based compound can be roughly confirmed by subtracting these amounts from the amount of each element detected by XRF.

[0140] The weight percentages of P and S in the apatite compounds of Comparative Example 3, Examples 4 and 5 calculated through this are summarized in Table 5.

[0141] Comparative Example 3 Example 4 Example 5P wt% 0.8264.0965.590S wt% 3.1660.7201.511

[0142] Referring to Table 5, it can be seen that in Comparative Example 3, the amount of S is greater than the amount of P, but in Examples 4 and 5, the amount of P is greater than the amount of S. In addition, when these wt% are divided by the atomic weight, the number of moles of P and S per 100 g of the apatite compound can be confirmed, and the number of moles of P and S also follows the above trend. That is, in Comparative Example 3, the number of moles of S is greater than the number of moles of P, whereas in Examples 4 and 5, the number of moles of P is greater than the number of moles of S. As a result of calculating as above for Example 1, the P wt% was calculated as 6.420 and the S wt% was calculated as 0.852. Therefore, it can be seen that as the number of moles of P in the raw material increases, the number of moles of P in the apatite compound increases. The ceramic material according to one embodiment can be a component of a conductive structure (100). FIG. 24 is a cross-sectional view of a conductive structure (100) including a ceramic compound according to one embodiment. Referring to FIG. 24, the conductive structure (100) may include a metal layer (110) and a ceramic layer (120) disposed on the metal layer (110).

[0143] The metal layer (110) may be formed of a single metal or a heterogeneous metal alloy. For example, the conductor may include at least one of aluminum (Al), silicon (Si), iron (Fe), copper (Cu), manganese (Mn), magnesium (Mg), chromium (Cr), and zinc (Zn). The present invention is not limited thereto. Depending on the purpose of the conductive structure (100), the metal layer (110) may be in the form of a thin film or in the form of a line extending in a specific direction.

[0144] A ceramic layer (120) may be disposed on the metal layer (110). The ceramic layer (120) may be formed of the ceramic material described above. For example, the ceramic layer (120) may include lead (Pb), copper (Cu), phosphorus (P), sulfur (S), and oxygen (O). The ceramic layer (120) may include an apatite-based compound. The ceramic layer (120) may include 50 wt% or more, or 90 wt% or more, of the apatite-based compound. The apatite-based compound may be lead phosphate apatite (Pb). 10 (PO4)6O) crystal structure, and lead, phosphorus, and oxygen may be partially substituted with copper and sulfur, respectively, within the crystal structure. For example, lead may be partially substituted with copper. Or, at least one of phosphorus and oxygen may be partially substituted with sulfur. The crystal structure of the apatite compound has channels by the arrangement of metal elements in the c-axis direction, and sulfur may be arranged in the channels. The number of moles of phosphorus in the ceramic layer (120) may be greater than the total number of moles of sulfur. The content of copper sulfide in the ceramic layer (120) may be less than 1 wt%, or the content of lead sulfide may be less than 4 wt%.

[0145] The surface of the metal layer (110) that comes into contact with the ceramic layer (120) may be surface-treated with an acidic substance. The acidic substance may include at least one of phosphoric acid, nitric acid, sulfuric acid, and acetic acid. On the surface of the surface-treated metal layer (110), anionic functional groups of the acidic substance (e.g., phosphoric acid group, hydrochloric acid group, sulfuric acid group, acetoxy group, and nitric acid group) may ionically bond with the metal of the ceramic layer (120). Thus, when forming the ceramic layer (120) on the metal layer (110), the anionic functional groups may act as seeds, so that the ceramic layer (120) may be stably formed. Alternatively, at least one of the phosphoric acid group and the sulfuric acid group of the ceramic layer (120) may ionically bond with the metal of the metal layer (110), so that the ceramic layer (120) may be electrically coupled to the metal layer (110).

[0146] The thickness of the ceramic layer (120) may be about 1 / 5 or less, or about 1 / 10 or less, of the thickness of the metal layer (110). For example, the ceramic layer (120) may be about 100 nm or more, about 200 nm or more, about 500 nm or more, or about 10 μm or less, or about 100 μm or less.

[0147] When an electrical signal is applied to at least one of the metal layer (110) and the ceramic layer (120), not only is a flow of electrons formed in the metal layer (110), but a flow of electrons may also be formed in the ceramic layer (120) in the form of a percolation pathway. In particular, since a flow of electrons is formed in the ceramic layer (120) in the form of a percolation pathway, a significant portion of the flow of electrons may flow through the ceramic layer (120).

[0148] Since the resistivity of the ceramic layer (120) according to one embodiment is smaller than that of the metal layer (110), even when current flows, less heat may be generated than in the metal layer (110). Accordingly, the thermal stability of the conductive structure (100) according to one embodiment may be improved. In addition, since the ceramic layer (120) is disposed on the metal layer (110), the metal layer (110) may be prevented from reacting with oxygen, thereby improving the chemical durability of the conductive structure (100).

[0149] The electrical conductivity of the conductive structure (100) according to one embodiment may be greater than the electrical conductivity of the metal layer (110). The conductivity of the conductive structure (100) may be greater than the electrical conductivity of the metal layer (110) even at room temperature (about -10°C or higher and about 40°C or lower) and atmospheric pressure (for example, about 0.5 atm or higher and about 5 atm or lower). For example, the electrical conductivity of the conductive structure (100) at room temperature (about -10°C or higher and about 40°C or lower) and atmospheric pressure (for example, about 0.5 atm or higher and about 5 atm or lower) may be 10% or more greater than the electrical conductivity of the metal layer (110). Alternatively, the electrical conductivity of the conductive structure (100) at room temperature (about -10°C or higher and about 40°C or lower) and atmospheric pressure (for example, about 0.5 atm or higher and about 5 atm) may be 10 4 It may be greater than S / cm. The electrical conductivity of the conductive structure (100) according to one embodiment is said to be greater than the electrical conductivity of the metal layer (110) at room temperature and atmospheric pressure, but is not limited thereto. The electrical conductivity of the conductive structure (100) may be greater than the electrical conductivity of the metal layer (110) even in a wider range than room temperature and atmospheric pressure, for example, at a temperature of about -30°C or higher and about 60°C or lower and a pressure of about 0.1 atm or higher and about 10 atm or lower.

[0150] The specific gravity of the ceramic layer (120) may be lower than that of the metal layer (110). For example, the specific gravity of the ceramic layer (120) according to one embodiment may be about half or less than that of the metal layer (110). For example, the specific gravity of the ceramic layer (120) according to one embodiment may be about 3 g / ml or more and about 7 g / ml or less at 20°C under room temperature and pressure. Alternatively, the specific gravity of the ceramic layer (120) may be about 4.36 g / ml at atmospheric pressure and about 20°C. A conductive structure including a ceramic layer may have a lower specific gravity than a conductive structure formed only with a metal layer.

[0151] Fig. 25 is a drawing illustrating a line-shaped conductive structure (101) according to one embodiment. Referring to Fig. 25, the conductive structure (101) may include a cylindrical metal layer (110) extending in a first direction (e.g., Y-axis direction) and a shell-shaped ceramic layer (120) surrounding an outer surface of the metal layer (110). The metal layer (110) and the ceramic layer (120) have been described with reference to Fig. 26, and thus a detailed description thereof will be omitted. Since the ceramic layer (120) of Fig. 25 surrounds the entire outer surface of the metal layer (110), the conductive structure (101) of Fig. 25 may have improved chemical durability and thermal stability compared to the conductive structure (100) of Fig. 24.

[0152] Fig. 26 is a drawing illustrating a conductive structure (102) according to another embodiment. Comparing Figs. 25 and 26, the conductive structure (102) of Fig. 26 may include a plurality of metal layers (111, 112) and a plurality of ceramic layers (122). The plurality of metal layers (111, 112) may include a core metal layer (111) having a circular shape and a shell metal layer (112) having a shell shape. The plurality of ceramic layers (122) may have a shell shape. The plurality of ceramic layers (122) and the plurality of shell metal layers (112) may be alternately arranged one by one on the outer surface of the core metal layer (110). The materials of the core metal layer (111) and the shell metal layer (112) are the same as those of the metal layer (110) described above, and thus a detailed description thereof will be omitted.

[0153] Fig. 27 is a drawing illustrating a conductive structure (103) including an insulating layer according to one embodiment. Comparing Figs. 25 and 27, the conductive structure (103) of Fig. 27 may further include an insulating layer (130) surrounding the outer surface of the ceramic layer (120). Although not illustrated in the drawing, it goes without saying that an insulating layer may also be disposed on the ceramic layer (120) of Figs. 24 and 26.

[0154] The insulating layer (130) electrically insulates the metal layer (110) and the ceramic layer (120) from the outside. The insulating layer (130) may be formed of a material having a high breakdown voltage, stable insulation performance for a long period of time, low dielectric loss, and excellent heat resistance such as heat resistance. For example, the insulating layer (130) may include a polyolefin resin such as polyethylene and polypropylene, and a polyethylene resin. The insulating layer (130) may further include inorganic particles. The inorganic particles may include nano-sized aluminum silicate, calcium silicate, calcium carbonate, magnesium oxide, and the like.

[0155] Example - Method for manufacturing a conductive structure

[0156] Two copper wires, each with an average diameter of 248 μm and a length of 120 cm, were prepared and first immersed in acetic acid (carbonic acid) for 5 to 30 minutes to clean the surface, and then washed with distilled water. Then, the surface was treated with diluted phosphoric acid (diluted to 1 to 30%), placed in a vacuum oven, heated at approximately 300°C for 1 hour, and then cooled to room temperature. One sample was placed in a vacuum desiccator for comparison, and the other was placed in a reaction vessel to form a ceramic layer.

[0157] For example, the conductive ceramic material according to Manufacturing Example 1 was powdered and placed in a furnace (a surface-treated copper wire was placed on top of the conductive ceramic material). After setting a vacuum, an inert gas (Ar argon) was injected and a ceramic layer was deposited at a temperature of 200 to 600°C for 20 minutes to 30 hours. After the thermal deposition was completed, the temperature was cooled to room temperature to form a conductive structure.

[0158] Fig. 28 is a scanning electron microscope (SEM) image of the surface of a metal layer before the formation of a ceramic layer according to one embodiment, and Fig. 29 is a scanning electron microscope (SEM) image of the surface of a conductive structure on which a ceramic layer is formed according to one embodiment. As shown in Fig. 29, it can be confirmed that the ceramic layer is well formed overall on the surface of the metal layer. This suggests that the metal layer was surface-treated with an acidic substance, and the anionic functional groups served as a seed layer for the ceramic layer.

[0159] Figure 30 is a scanning electron microscope (SEM) photograph of a cross-section of a conductive structure according to one embodiment. It can be confirmed that the channels of the ceramic layer are formed long in the deposition direction (c-axis).

[0160] Figure 31 is a scanning electron microscope (SEM) image of the surface of a ceramic layer of a conductive structure according to one embodiment. It can be confirmed that the channels contained in the ceramic layer are randomly connected in three-dimensional space. This suggests that the channels are expected to form percolation pathways.

[0161] Figure 32 is an IV graph illustrating the electrical characteristics of a conductive structure according to one embodiment. A conductive ceramic material powder produced in Example 1 was thermally deposited on a copper wire having a diameter of approximately 200 μm at approximately 250°C under vacuum conditions to form a ceramic layer having a thickness of approximately 0.5 μm. IV graphs were obtained for a copper wire without a ceramic layer and a copper wire coated with a ceramic layer at room temperature and in a commercial environment.

[0162] Referring to FIG. 32, it can be confirmed that the resistance of the embodiment (53), which is a copper wire coated with a ceramic layer, is lower than that of the comparative example (51), which is a copper wire without a ceramic layer. In the comparative example, assuming that copper of the same thickness as the ceramic layer is deposited, the voltage of the comparative example can be about 3.13 V under a current of 5 A. On the other hand, the embodiment coated with the ceramic layer is about 2.83 V under the same current. That is, it can be confirmed that the resistance of the embodiment is reduced by about 10% or more. This confirms that the conductive structure including the ceramic layer and the metal layer according to one embodiment has an electrical conductivity greater than that of the metal layer.

[0163] Fig. 33 is a current-temperature graph illustrating the heating characteristics of a conductive structure and a metal layer according to one embodiment. Temperature changes according to current were measured for each of two metal layers (51) and a conductive structure (53) including a ceramic layer and a metal layer.

[0164] Referring to Figure 33, Example (53) exhibited a significantly smaller temperature change according to current compared to Comparative Example (51). It can be seen that a conductive structure including a ceramic layer with high electrical conductivity exhibits significantly reduced heat generation compared to a metal layer formed solely of metal. This is expected to significantly reduce power loss during power transmission.

[0165] A conductive structure including a ceramic compound according to one embodiment may be used as a cable, wiring, or the like in an electronic device requiring high power. When the conductive structure according to one embodiment is used as a cable (200) or wiring, it may provide more power than a wiring formed of metal or the like. In addition, since electrons are dispersed and move in the metal layer (110) and ceramic layer (120), relatively less heat may be generated in the metal layer (110).

[0166] FIG. 34 is a drawing illustrating a cable (200) including a conductive structure according to one embodiment.

[0167] As illustrated in FIG. 34, a cable (200) may have a conductor (210) positioned at its center. The conductor (210) may serve as a passage for current flow. Although the drawing illustrates a plurality of conductors (210) as stranded wires, the present invention is not limited thereto. The conductor (210) may be configured in various shapes, such as a flat conductor. The conductor (210) may be one of the conductive structures (100, 101, 102, 103) described above.

[0168] The conductor (210) formed by twisting wires, etc., may have an uneven surface, resulting in an uneven electric field and a high risk of partial corona discharge. Furthermore, if a gap is created between the conductor (210), the surface, and the insulating layer (230) described below, the insulation performance may deteriorate. To address the aforementioned issues, an internal semiconducting layer (220) formed of a semiconducting material may be disposed on the outside of the conductor (210).

[0169] An insulating layer (230) is provided on the outside of the inner semiconducting layer (220). The insulating layer (230) electrically insulates the conductor (10) from the outside. The insulating layer (230) may be formed of a material that has a high breakdown voltage, stable insulation performance for a long period of time, low dielectric loss, and heat resistance. Accordingly, the insulating layer (230) may include a polyolefin resin such as polyethylene and polypropylene, or a polyethylene resin. The insulating layer (230) may further include inorganic particles. The inorganic particles may be nano-sized aluminum silicate, calcium silicate, calcium carbonate, magnesium oxide, or the like.

[0170] Meanwhile, if the outside as well as the inside of the insulation layer (230) is not shielded, some of the electric field is absorbed by the insulation layer (230), but most of the electric field is discharged to the outside. In this case, if the electric field increases beyond a predetermined value, the insulation layer (230) and the cable jacket (260) of the cable (200) may be damaged by the electric field. Therefore, an outer semiconducting layer (240) is provided on the outside of the insulation layer (230). Ultimately, the outer semiconducting layer (240) plays a role in improving the dielectric strength of the insulation layer (230) by making the distribution of electric field lines between the aforementioned inner semiconducting layer (220) into equipotentials. In addition, the outer semiconducting layer (240) can prevent corona discharge by smoothing the surface of the insulation layer (230) in the cable (200) to alleviate electric field concentration.

[0171] On the outside of the outer semiconducting layer (240), a shielding layer (250) made of a metal sheath or a neutral wire is provided depending on the type of cable (200). The shielding layer (250) may be provided for electrical shielding and return of short-circuit current.

[0172] A cable jacket (260) is provided on the outermost part of the cable (200). The cable jacket (260) is provided on the outer surface of the cable (200) to protect the internal structure of the cable (200). Therefore, the cable jacket (260) may be formed of a material having excellent weather resistance to withstand various climates including light, wind, moisture, and gases in the air, chemical resistance to withstand chemicals, and mechanical strength. For example, the cable jacket (260) may include at least one of PVC (Polyvinyl chloride) and PE (Polyethylene).

[0173] FIG. 35 is a drawing illustrating a power semiconductor module (300) including a conductive structure according to one embodiment.

[0174] Referring to FIG. 35, a power semiconductor module (300) may include a substrate (310), a power semiconductor (320), a power terminal (330), and a molding part (340). The substrate (310) may include an insulating layer (311), a first conductive layer (312), and a second conductive layer (313).

[0175] The insulating layer (311) may include an insulating ceramic. The first conductive layer (312) may have one surface bonded to one surface of the insulating layer (311), and an electrically conductive pattern (hereinafter referred to as a pattern) may be formed on the other surface.

[0176] The second conductive layer (313) may have one side bonded to the other side of the insulating layer (311).

[0177] The power semiconductor (320) is composed of a power switching device and a control IC, and can convert, decompose, and manage the applied power. The power semiconductor (320) can be formed in a structure in which a plurality of power devices are connected in parallel to metal wiring formed on a predetermined substrate, and can be coupled to the other side of the first conductive layer (312) so as to be electrically connected to at least a portion of the first conductive layer (312) of the substrate (310). The power semiconductor (320) can receive power from a power terminal (330).

[0178] The power terminal (330) can be electrically connected to at least a portion of the pattern formed on the first conductive layer (312).

[0179] The molding part (340) may be formed to embed a component including a semiconductor (20) installed in the substrate (310). The molding part (340) may be bonded to the substrate (310) to surround the second conductive layer (313) except for the other side of the second conductive layer (313), the power terminal (330) except for the other end of the power terminal (330), the insulating layer (311), the first conductive layer (312), and the semiconductor (20). The molding part (340) may be formed of a polymer material having excellent insulating and protective properties, and may be formed of a material including, for example, an epoxy molding compound (EMC). When the molding part (340) is formed in this manner, the component such as the semiconductor (20) embedded inside the molding part (340) may be protected by the molding part (340).

[0180] In the above-described power semiconductor module (300), at least one of the first conductive layer (312), the second conductive layer (313), and the power terminal (330) may be formed of the conductive structure (100, 101, 102, 103) described above. For example, the first conductive layer (312) may be formed of the conductive structure (100). At least one of the first conductive layer (312), the second conductive layer (313), and the power terminal (330) may be formed of the conductive structure (100) described above, thereby reducing power loss and reducing heat generation.

[0181] FIG. 36 is a drawing illustrating a solar cell array (400) including a conductive structure according to one embodiment.

[0182] The solar cell array (400) may include a plurality of solar cell units (410) that may be electrically connected to each other through connectors (420). The plurality of solar cell units (410) may be connected in series and / or in parallel through the connectors (420). Although not specifically illustrated in the drawing, each solar cell unit (410) may include a front electrode disposed on the front side, a rear electrode disposed on the rear side, and a photoelectric conversion layer disposed between the front electrode and the rear electrode and converting light into an electrical signal. Either the front electrode or the rear electrode may be referred to as an anode electrode, and the other may be referred to as a cathode electrode.

[0183] Since the output voltage of each solar cell unit (410) is small, such as about 1 V or less, the solar cell units (410) can be connected in series to increase the output voltage. For example, a solar cell array (400) can be formed by connecting the front electrode of a solar cell unit (410) and the rear electrode of another adjacent solar cell unit (410) in series through a connector (420). A conductive structure according to one embodiment, for example, the conductive structure illustrated in FIGS. 24 to 26, can be applied as the connector (420).

[0184] The connector (420) and the solar cell unit (410) may be bonded by a conductive adhesive layer (430). The electrically conductive adhesive layer (430) may include a conductive adhesive material, for example, microballs having a low melting point and a conductive paste. Although the connector (420) and the conductive adhesive layer (430) have been described as separate layers, they are not limited thereto. According to one embodiment, the ceramic layer may further include a conductive adhesive material.

[0185] The ceramic compounds, conductive structures including ceramic compounds, and devices thereof described above are merely exemplary, and those skilled in the art will readily appreciate that various modifications and equivalent alternative embodiments are possible. While the above description contains numerous specific details, they should be construed as illustrative examples of specific embodiments rather than limiting the scope of the invention. Therefore, the scope should not be determined solely by the described embodiments, but rather by the technical concepts set forth in the claims.

Claims

1. In a conductive structure, metal layer; A ceramic layer disposed on the metal layer and containing copper (Cu), phosphorus (P), sulfur (S), lead (Pb), and oxygen (O); A conductive structure in which the electrical conductivity of the conductive structure is greater than the electrical conductivity of the metal layer at a temperature of -10℃ or higher and 40℃ or lower and a pressure of 0.5atm or higher and 5atm or lower.

2. In paragraph 1, The electrical conductivity of the above conductive structure is A conductive structure having an electrical conductivity of 10% or more than that of the above metal layer.

3. In paragraph 1, The electrical conductivity of the above conductive structure is 10 4 Conductive structures exceeding s / cm.

4. In paragraph 1, Among the above metal layers, the surface in contact with the above ceramic layer is A conductive structure whose surface is treated with an acidic substance.

5. In paragraph 4, The above acidic substance is, A conductive structure comprising at least one of phosphoric acid, nitric acid, sulfuric acid, and acetic acid.

6. In paragraph 1, A conductive structure in which at least one of the phosphoric acid group and the sulfuric acid group included in the ceramic layer is ionically bonded to the metal layer.

7. In paragraph 1, The thickness of the above ceramic layer is A conductive structure having a thickness of less than 1 / 5 of the above metal layer.

8. In paragraph 1, The above ceramic layer is, A conductive structure having a specific gravity of less than 1 / 3 of the above metal layer.

9. In paragraph 1, The specific gravity of the above ceramic layer is A conductive structure having a content of 3 g / ml or more and 7 g / ml or less.

10. In paragraph 1, The above metal layer is, A conductive structure comprising at least one of aluminum (Al), silicon (Si), iron (Fe), copper (Cu), manganese (Mn), magnesium (Mg), chromium (Cr), and zinc (Zn).

11. In paragraph 1, The above metal layer is, Including a cylindrical shape extending in the first direction, The above ceramic layer is, A conductive structure including a shell shape surrounding the outer surface of the above metal layer.

12. In paragraph 11, A conductive structure further comprising an insulating layer surrounding the outer surface of the metal layer.

13. In paragraph 1, The above metal layer is, It comprises a cylindrical core metal layer extending in the first direction and a plurality of shell metal layers in the shape of shells, The above ceramic layer is, Contains multiple shell ceramic layers in a shell shape, A conductive structure in which the outer surface of the core metal layer is alternately covered by the plurality of shell ceramic layers and the plurality of shell metal layers.

14. In paragraph 1, The above ceramic layer is, Lead phosphate apatite (Pb 10 A conductive structure comprising an apatite compound having a (PO4)6O) crystal structure in which lead is partially substituted with copper within the crystal structure.

15. In paragraph 14, The above apatite compound is, A conductive structure in which at least one of the phosphorus and oxygen atoms is partially replaced by sulfur.

16. In paragraph 1, The above ceramic layer is, A conductive structure containing less than 1 wt% of copper sulfide.

17. In paragraph 1, The above ceramic layer is, A conductive structure containing less than 4 wt% of lead sulfide.

18. In paragraph 1, The above ceramic layer A conductive structure comprising a compound represented by the following chemical formula. (chemical formula) Pb 10-x-v Cu (x+v) (PO4) 6-y (SO4) y O z-w S w (But, 0 <x<4, 0≤v≤6, 0.9≤x+v≤9.9, 0<y<3, 0<z≤4, 및 0<w≤z).

19. A conductor comprising one or more conductive structures according to paragraph 1; An inner semiconducting layer arranged on the outer side of the above conductor; An insulating layer disposed on the outer side of the inner semiconducting layer; An outer semiconducting layer disposed on the outside of the insulating layer; A shielding layer disposed on the outside of the outer semiconducting layer; and A cable comprising a cable jacket disposed on the outer side of the above shielding layer.

20. Insulating layer; A power semiconductor disposed on the above insulating layer; A conductive layer disposed between the insulating layer and the power semiconductor and electrically connected to the power semiconductor; A power terminal electrically connected to the conductive layer to provide power to the power semiconductor; A molding part is disposed on the insulating layer and embeds the power semiconductor; A power semiconductor module, wherein at least one of the conductive layer and the power terminal comprises a conductive structure according to claim 1.

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