Transport system, vacuum arrangement and substrate carrier

Abstract

According to various embodiments, a transport system (100) can have: a plurality of transport rollers (112) which provide a transport path (111) and are designed to transport a transport article (110, 300) along the transport path (111) through a first processing region (151) and a second processing region (153); the plate-type transport article (110, 300), which has an electrically conductive potential-receiving surface; a plurality of potential paths (161, 163, 165) which are arranged one behind the other along the transport path (111) and are galvanically separated from one another; of which: a first potential path is designed to couple a process potential of a first type into the potential-receiving surface when the potential-receiving surface is arranged at least partly in the first processing region (151); a second potential path is designed to couple a process potential of a second type into the potential-receiving surface when the potential-receiving surface is arranged at least partly in the second processing region (153); a third potential path is designed to galvanically separate the potential-receiving surface when the potential-receiving surface is arranged between the first processing region (151) and the second processing region (153); wherein a distance of the first processing region (151) from the second processing region (153) is smaller than a sum of: an extent of the potential-receiving surface along the transport path (111) and a distance between directly adjacent axes of rotation of the plurality of transport rollers (112).

Description

[0001] Description

[0002] Transport system, vacuum arrangement and substrate carrier

[0003] Various embodiments relate to a transport system, a vacuum arrangement and a substrate carrier.

[0004] In general, workpieces (e.g., substrates) can be processed (treated), e.g., coated, heated, etched, and / or structurally modified. Various processing implementations are carried out using a plasma, which can be used, for example, to process the substrate additively, subtractively (e.g., for coating), or even simply thermally. To form the plasma, an electric field is typically used, which ionizes the plasma-forming gas and is provided by one or more so-called process potentials.

[0005] A substrate can be coated, for example, using cathode sputtering (also known as sputter deposition). For sputtering, a plasma-forming gas is ionized using a cathode (also known as a magnetron cathode), and the resulting plasma can be used to sputter a material to be deposited (also known as the target material). The sputtered target material can then be applied to a substrate, where it can be deposited and form a layer. For example, one or more layers can be deposited on a substrate using sputtering.

[0006] In a so-called continuous flow system (also known as an inline system), the substrate is transported through the system along a transport path and can be exposed to various process conditions that differ from one another, for example, in the electric field. Increasing the system's productivity generally requires a large amount of space, for example, to separate the various process conditions and / or to implement substrate transport using a substrate carrier. For example, the plasma can lead to a high thermal input into the substrate carrier, causing it to heat up and expand, which impairs its transportability.

[0007] According to various embodiments, a transport system, a vacuum arrangement, and a substrate carrier (also referred to as a carrier) are provided that address the above aspects, particularly in favor of highly productive processing with the smallest possible space requirement. One challenge, for example, may be to inhibit an electrical short circuit due to interacting electric fields and to minimize the space required for this.

[0008] Various examples are described below which relate to what is described herein and shown in the figures.

[0009] Example 1 is a transport system, comprising: a plurality of transport rollers, which provide a transport path and are configured to transport a transport item (e.g. plate-shaped and / or lying thereon) along the transport path through a first processing area and a second processing area; the plate-shaped transport item, which has an electrically conductive potential receiving surface; a plurality of potential paths arranged one behind the other along the transport path and galvanically separated from one another, of which: a first potential path (also referred to as a first potential mediator or as a first potential path of the first type) is configured to couple a (e.g. process-supporting) process potential of the first type to the potential receiving surface, if (e.g. as long as and / or as soon as) the potential receiving surface is at least partially (iepartially or completely) is arranged in the first processing area; a second potential path (also referred to as a second potential mediator or as a second potential path of the first type) is arranged to couple a (e.g. process-supporting) process potential of the second type to the potential receiving surface if (e.g. as long as and / or as soon as) the potential receiving surface is arranged at least partially (i.e. partially or completely) in the second processing area; a third potential path (also referred to as a separation path, potential separator or as a potential path of the separation type) is arranged to galvanically (e.g.floating) when the potential receiving surface is arranged between the first processing region and the second processing region; wherein a distance of the first processing region from the second processing region is smaller than a sum of an extension of the potential receiving surface along the transport path and a distance between immediately adjacent axes of rotation of the plurality of transport rollers; and / or as an extension of the first processing region and an extension of the second processing region (e.g. a sum thereof) along the transport path.

[0010] Example 2 is configured according to Example 1, wherein a group of transport rollers arranged in the first processing area and / or in the second processing area are at least partially electrically conductive and / or have an electrically conductive outer surface; and / or wherein the group of transport rollers are electrically coupled to one another, e.g., by means of an electrical circuit (e.g., having a connection).

[0011] Example 3 is configured according to example 1 or 2, wherein the first potential mediator and / or the second potential mediator are configured to couple the respective (e.g. process-supporting) process potential into the potential receiving surface by means of one or more than one transport roller of the plurality of transport rollers, for example when the potential receiving surface touches the one or more than one transport roller.

[0012] Example 4 is configured according to any one of Examples 1 to 3, wherein the potential separator is implemented by means of one or more than one galvanically insulated transport roller of the plurality of transport rollers, which are arranged between the first processing area and the second processing area and / or are galvanically separated from the first potential mediator and / or the second potential mediator.

[0013] Example 5 is configured according to any one of examples 1 to 4, wherein the transported material is configured as a substrate carrier having one or more than one substrate support surface for placing a substrate, which is electrically coupled to the substrate receiving surface.

[0014] Example 6 is configured according to any one of examples 1 to 5, wherein the first processing region and the second processing region are immediately adjacent to each other.

[0015] Example 7 is configured according to any one of Examples 1 to 6, wherein the transported item has two opposing (e.g., projecting and / or wedge-shaped) end faces (also referred to as shielding panels) relative to the transport path, one or more than one end face of which has a surface running obliquely to the transport path (also referred to as a gap-delimiting surface), preferably running at an angle thereto (at which the two end faces, for example, coincide); and optionally, each of which end faces extends away from the potential-receiving surface and / or a substrate-receiving region of the transported item. Alternatively or additionally, the two shielding panels can differ from one another in the position of the gap-delimiting surface relative to the potential-receiving surface and / or the distance of the gap-delimiting surface from the transport path.

[0016] In Example 8, the transport system according to any one of Examples 1 to 7, further comprising: a drive system (e.g., comprising one or more than one motor and / or comprising one or more than one actuator) configured to drive a rotational movement of at least some of the plurality of transport rollers.

[0017] In example 9, the transport system according to example 8 can optionally further comprise: a control device which is configured to control the drive system in such a way that the one row (e.g. successively along the transport path and / or) transported goods by means of the rotational movement, which the goods have, overlap with their end faces, for example so that the surfaces of successive goods face each other, e.g. forming a gap running at the angle.

[0018] Example 10 is a vacuum arrangement comprising: the transport system according to any one of examples 1 to 9, a vacuum chamber system having two vacuum locks and at least one vacuum section between them, which has the first processing area and the second processing area; a first processing device configured to provide a first process in the first processing area by means of the (e.g. process-supporting) first-type process potential to which the transport path is exposed; a second processing device configured to provide a second process in the second processing area by means of the (e.g. process-supporting) second-type process potential to which the transport path is exposed.

[0019] It can be understood that the at least one vacuum section can also have more than two processing regions, for example, three or more processing regions, for example, four or more processing regions, for example, five or more processing regions. For example, the sequence of processing regions and / or potential paths described herein can be repeated along the transport path, or at least similarly configured sequences can be present.

[0020] Example 11 is a vacuum arrangement (e.g. according to Example 10), comprising: a vacuum chamber system, which has two vacuum locks; a transport item (e.g. plate-shaped and / or lying thereon) which has an electrically conductive potential receiving surface; a transport system, which has a plurality of transport rollers, which provide the transport path and are configured to transport the transport item along the transport path through the vacuum chamber system, a plurality of process groups, each process group comprising: a processing area, which is arranged between the two vacuum locks, a processing device, which is configured to carry out a process (e.g. coating process), to which the transport path is exposed, in the processing area by means of one or more than one process potential (e.g.a process-supporting process potential and / or a plasma-forming process potential), a potential path (e.g. potential mediator), which is configured to couple the (e.g. process-supporting) process potential to the potential receiving surface, if the potential receiving surface is at least partially arranged in the processing area; the vacuum arrangement further comprising: an additional potential path (e.g. potential separator), which is configured to galvanically (floating) separate the potential receiving surface, if the potential receiving surface is between two (e.g.immediately adjacent) processing areas of the plurality of process groups; wherein a distance between the two processing areas is smaller than a sum of an extension of the potential receiving area along the transport path and a distance between immediately adjacent axes of rotation of the plurality of transport rollers; and / or as an extension of the first processing area and an extension of the second processing area (e.g. a sum thereof) along the transport path.

[0021] Example 12 is configured according to example 10 or 11, wherein the respective process is carried out by means of a plasma which is electrically supplied and / or excited to form by means of the (e.g. plasma-forming) process potential.

[0022] Example 13 is configured according to any one of Examples 1 to 12, wherein the transported item comprises a substrate carrier, which preferably comprises one or more than one substrate receiving region (e.g. provided by means of a recess) for receiving a substrate, in which, for example, the substrate support surface is arranged.

[0023] Example 14 is configured according to any one of Examples 1 to 13, wherein the processes differ from each other in one side of the transported goods which is exposed to the process. For example, the processes can implement a two-sided processing of the transported goods. Example 15 is configured according to any one of Examples 1 to 14, wherein an extension of the

[0024] The substrate support area along the transport path is approximately 0.5 meters (m) or more (e.g., 1 m or more) and / or a maximum of 5 m (e.g., 2.5 m or less). The larger the substrate support area, the more robust the process and / or the fewer transport rollers are required.

[0025] Example 16 is configured according to any one of Examples 1 to 15, wherein the transport path extends in a transport direction. It can be understood that a direction indication related to the transport path can apply analogously to the transport direction, and vice versa.

[0026] Example 17 is configured according to any one of examples 1 to 16, wherein each of the plurality of transport rollers adjoins a (e.g., planar) transport surface in which, for example, the transport path is arranged and / or which extends along the transport direction; wherein preferably a rotation axis of each transport roller, about which it is rotatably mounted, is parallel to the transport surface.

[0027] Example 18 is configured according to any one of examples 1 to 17, wherein the angle is greater than approximately 5°, e.g., than 10°, e.g., than 15°, e.g., than 20°.

[0028] Example 19 is a substrate carrier (e.g. providing the transport item from one of Examples 1 to 18), comprising: a substrate receiving area for receiving a substrate (the substrate receiving area preferably provided by means of a recess and / or preferably comprising a substrate support surface for placing the substrate thereon); two support sections, preferably extending parallel to one another and / or along a transport direction, between which the substrate receiving area is arranged, of which preferably each support section adjoins (e.g. flatly) a transport surface and / or is plate-shaped; the substrate carrier preferably further comprising: two (e.g. end-side and / or wedge-shaped) shielding panels, between which, for example, the substrate receiving area is arranged.

[0029] Example 20 is the substrate carrier according to Example 19, wherein each shielding aperture of the shielding apertures extends away from the substrate receiving area and / or has a surface which is oblique to the transport surface (e.g., running at an angle thereto at which the shielding apertures, for example, coincide). The (e.g., wedge-shaped) shielding apertures, which can overlap one another (also referred to as a “carrier overlap”), promote a stable plasma, for example for plasma pretreatment by means of a magnetron sputter etcher. For example, the carrier overlap prevents gaps from forming between the magnet and the etcher box. It is advantageous if the magnet and the etcher box, if (e.g.,As soon as and / or as long as the plasma is formed, they are separated from each other by a solid body, for example, the substrate and / or the carrier, on which the plasma burns stably and no secondary plasmas burn outside the etcher box through large gaps between the magnet and the etcher box. This is not necessarily the case for other components.

[0030] Example 21 is the substrate carrier according to any one of examples 19 or 20, wherein the (e.g., top-side) boundary surface of a first of the two shielding panels is directed away from the transport surface and / or wherein the (e.g., bottom-side) boundary surface of a second of the two shielding panels is directed toward the transport surface. This inhibits the shielding panels from bending toward each other upon thermal distortion, e.g., by encouraging them to bend away from each other. Otherwise, there would be a risk of the carriers touching, which would make it difficult to provide their different electrical potentials.

[0031] Example 22 is the substrate carrier according to any one of Examples 19 to 21, wherein the two shielding panels differ from each other in: their distance from the transport surface; the distance of their boundary surface from the transport surface and / or the orientation of their boundary surface.

[0032] Example 23 is the substrate support according to any one of Examples 19 to 22, further comprising: for each of the

[0033] Support sections, a stabilizing section which is located between the support section and the

[0034] Substrate receiving area is arranged (e.g. spatially separating them from one another) and / or coupling them together, wherein the stabilizing section has a lower thermal conductivity (e.g. along the transport path (and / or the transport direction)) than the support section for inhibiting thermal expansion; and / or wherein the stabilizing section has a lower thermal expansion coefficient along the transport path than the support section.

[0035] Example 24 is the substrate carrier according to Example 23, the stabilizing section comprising: a row of (e.g. oval and / or slot-shaped) openings arranged one behind the other along the transport path (and / or the transport direction), which penetrate the substrate carrier (e.g. from a top side to its bottom side), and / or a row of webs arranged one behind the other along the transport path (and / or the transport direction), of which immediately adjacent webs are separated from one another by means of an opening and of which each web is transverse to the transport path (and / or the transport direction).

[0036] Example 25 is configured according to any one of Examples 1 to 24, wherein the (e.g., process-supporting) first-type process potential and / or the (e.g., process-supporting) second-type process potential are a DC potential and / or differ from one another by approximately 25 volts (V) or more, e.g., by approximately 50 V or more, e.g., by approximately 100 V or more, e.g., by approximately 200 V or more, e.g., by approximately 500 V or more. If the substrate carrier is operated as an anode, the (e.g., process-supporting) process potential may be negative with respect to electrical ground. In this regard, it should be noted that electrical ground does not necessarily have to correspond to an electrical potential of 0 V, but can.

[0037] Example 26 is configured according to any one of Examples 1 to 25, wherein the substrate comprises a bipolar plate or component thereof (e.g., a so-called half plate).

[0038] Example 27 is configured according to any one of Examples 1 to 26, wherein a result of processing the substrate by means of the plasma is used to produce a component of a fuel cell and / or an electrolyzer, e.g., a bipolar plate as a component, which in the case of the fuel cell may, for example, be a joined bipolar plate. To produce an electrolyzer, a half-plate or joined bipolar plate does not necessarily have to be used as a component (for example, in contrast to the fuel cell). For example, when used to produce an electrolyzer, the substrate does not necessarily have to be configured to carry a cooling medium and therefore does not necessarily have to provide a channel (e.g., between two half-plates as exemplary substrates), for example when water is supplied to the electrolyzer, which cools it.For example, components of the electrolyzer can also be processed that perform other functions apart from those of a bipolar plate, such as the distribution of process media between the bipolar plate and the membrane.

[0039] Example 28 is configured according to any one of the appended claims and / or any one of Examples 1 to 27.

[0040] It shows

[0041] Figure 1 shows a transport system according to various embodiments in a schematic side view or cross-sectional view;

[0042] Figures 2A and B each show the transport system according to various embodiments in a schematic side view or cross-sectional view at different times;

[0043] Figure 3 shows a substrate carrier according to various embodiments in a schematic plan view or cross-sectional view;

[0044] Figures 4A and B each show a row of two substrate carriers according to different embodiments in different views;

[0045] Figures 5A and B each show a substrate carrier according to various embodiments in different views; Figures 6A and B each show a vacuum arrangement according to various embodiments in a schematic side view or cross-sectional view;

[0046] Figure 7A shows a processing device according to various embodiments in a schematic side view or cross-sectional view; and

[0047] Figure 7B shows a transport system according to various embodiments in a schematic side view or cross-sectional view.

[0048] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top," "bottom," "front," "back," "fore," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0049] Throughout this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and an indirect connection (e.g., resistive and / or electrically conductive, e.g., an electrically conductive connection), a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0050] According to various embodiments, the term "coupled" or "coupling" can be understood in the sense of a (e.g., mechanical, hydrostatic, thermal, and / or electrical), e.g., direct or indirect, connection and / or interaction. For example, several elements can be coupled to one another along an interaction chain, along which the interaction can be exchanged, e.g., a fluid (then also referred to as fluidically coupled). For example, two coupled elements can exchange an interaction with one another, e.g., a mechanical, hydrostatic, thermal, and / or electrical interaction. A coupling of several vacuum components (e.g., valves, pumps, chambers, etc.) to one another can include fluidically coupled ones. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g., physical and / or physical) coupling, e.g.,by means of direct physical contact. A clutch can be configured to transmit a mechanical interaction (e.g., force, torque, etc.).

[0051] In the context of vacuum components (e.g., a pump, a chamber, a line, a valve, etc.), the term "coupled" or "coupling" can be understood in the sense of a connection to a common vacuum system. The components of the vacuum system can be configured to exchange a gas with each other via the coupling, whereby the coupling can be gas-separated from an external part of the vacuum system.

[0052] The term "control device" can be understood as any type of logic-implementing entity, which may, for example, comprise circuitry and / or a processor capable of executing software stored in a storage medium, firmware, or a combination thereof, and issuing instructions based thereon. The control device can, for example, be configured using code segments (e.g., software) to control the operation of a system (e.g., its operating point), e.g., a machine or a system, e.g., at least its kinematic chain.

[0053] Control can be understood as the intentional influencing of a system. The current state of the system (also referred to as the actual state) can be changed according to a specification (also referred to as the target state). The parameters of the target state explained here (also referred to as target parameters) can, for example, be implemented using code segments or can be stored on a storage medium in some other way. Regulation can be understood as control, whereby a change in the state of the system is additionally counteracted by disturbances. Illustratively, the control system can have a forward-facing control path and thus clearly implement a sequential control that converts an input variable (e.g. the specification) into an output variable. However, the control path can also be part of a control loop, so that a closed-loop control is implemented.For control purposes, corresponding actuators of the system can be activated, which influence the actual state of the system. Examples of actuators include: a drive device (e.g., for providing torque), a valve (e.g., for controlling pressure), a switch (e.g., for closing a discharge path). The drive device can, for example, comprise a linear drive (e.g., a reciprocating piston) or an electric motor.

[0054] A negative pressure (e.g. vacuum) as described herein may be a pressure in a range of about 10 mbar to about 1 mbar (in other words a rough vacuum) or less, for example a pressure in a range of about 1 mbar to about 10- 3 mbar (in other words a fine vacuum) or less, for example a pressure in a range of approximately 10 3 mbar to approximately 10- 7mbar (in other words a high vacuum) or less, for example a pressure in a range of less than 10- 7 mbar (in other words an ultra-high vacuum).

[0055] The term "system" can be understood as a set of interacting entities (e.g., devices). Examples of system entities include: a mechanical component, an electromechanical transducer (or other types of actuators), an electrical component, code segments or at least one instruction (e.g., encoded in a storage medium), a control circuit (e.g., closed-loop control), a sensor, a kinematic chain, and / or a control device. A drive system can, for example, comprise one or more than one drive device, each drive device being configured to provide a torque by means of which a rotational movement can be driven. For example, the transport system can comprise at least one transport device (e.g., comprising a plurality of transport rollers) and a transported object (e.g., a substrate carrier).

[0056] The term "sputtering" refers to the atomization of a material (also referred to as coating material or target material) using a plasma. The atomized components of the target material are thus separated from one another and can, for example, be deposited elsewhere to form a layer. Sputtering can be carried out using a so-called sputtering device, which may have a magnet system (also referred to as a magnetron). The target material can be provided by a so-called sputtering target, which can, for example, be tubular (also referred to as a tubular target) or plate-shaped (also referred to as a plate target). To generate the plasma, a voltage can be applied to the sputtering target (also referred to as the target for short), so that the sputtering target is operated as a cathode. Even if the voltage is an alternating voltage, the term "cathode" is retained.

[0057] According to various embodiments, an electrical voltage can be understood as an electrical potential difference (difference between two electrical potentials), e.g., between two nodes (e.g., terminals) of a circuit. For example, a voltage across an entity (i.e., the voltage dropped across the entity) can be understood as the difference between the electrical potentials on opposite sides (e.g., at the terminals) of the entity. A voltage at a node (e.g., a terminal, input, output, or similar) can be understood as the difference between the electrical potential at the node and a reference potential (e.g., electrical ground). Information about multiple voltages and / or multiple potentials (e.g., comparisons between them) can refer to the same reference potential. If the voltage at a node is positive, its electrical potential is greater than the reference potential.If the voltage at a node is negative, its electrical potential is smaller than the reference potential. A voltage difference (e.g., between two nodes) can be understood as the difference between two voltages, which, if the two voltages are referenced to the same reference potential, corresponds to the difference between the corresponding electrical potentials (e.g., between the two nodes) (i.e., specified independently of the reference potential).

[0058] Electrically floating in the context of an electrical component (e.g. an object, a circuit, a contact, a connection, etc.) can be understood as the component being galvanically separated from its environment, for example in such a way that the object can neither absorb nor release electrical charges. As a consequence, the electrical potential of the component is floating and variable (also referred to as "floating"). If the electrically floating component is exposed to an electric field, for example, this field assumes the spatial distribution of the electric field. The electrical potential of the electrically floating component can then result, for example, from a capacitively coupled voltage. An electrically floating component can, for example, only be capacitively coupled to its environment. Electrically floating can, for example, be understood as being independent of the reference potential (e.g.electrical ground) and / or a power supply.

[0059] Length is understood here as an extension along the transport path. Height is understood here as an extension perpendicular to the transport surface. Width is understood here as an extension within the transport surface and perpendicular to the transport path.

[0060] The term "potential path" can be understood herein as a device configured to influence the electrical potential of a potential receiving surface, for example, depending on the position of the potential receiving surface along the transport path. The potential path defines a region assigned to the potential path, e.g., a processing region or a separation region, depending on the type of potential path. If the potential path is of a first type (then also referred to as a potential path of the first process type, as a "potential mediator" or as a potential coupling device), it can be configured to couple a process potential (e.g., ohmic) provided to the potential mediator (e.g., process-supporting) to the potential receiving surface when (e.g., as soon as and / or as long as) the potential mediator is at least partially arranged in the assigned processing region.If the potential path is of a second type (also referred to as a separation-type potential path or a separation path), it can be configured to provide a floating electrical potential to the potential receiving surface, for example when (e.g. as soon as and / or as long as) the separation path is arranged completely in the separation region.

[0061] With regard to the process potential, for the sake of simplicity, reference is made, among other things, to a so-called plasma-forming process potential (also referred to as a coating process potential, e.g. providing a cathode process potential) and a process-supporting process potential (also referred to as a receiving surface process potential, a BIAS process potential or a substrate BIAS). The plasma-forming process potential can, for example, be configured to stimulate the formation of a plasma and / or be applied to an electrode (e.g. a cathode). The process-supporting process potential can, for example, be applied to the transport material (e.g. the receiving surface and / or the substrate) and be configured to accelerate ions from the plasma towards the transport material. For example, the plasma-forming process potential can make a greater contribution (e.g. in the form of electrical power) to the formation of the plasma than the process-supporting process potential.For example, the process-supporting process potential alone may not be sufficient to stimulate plasma formation if no plasma-forming process potential is provided. The (e.g., process-supporting) process potential may, for example, be time-invariant, or at least be or become controlled according to a desired process potential. The (e.g., process-supporting) process potential may, for example, be electrical ground (e.g., in the case of a sputter etcher as a processing device) or may be different from it.

[0062] For example, if the potential receiving surface is partially located in the processing area and partially in the separation area, it can be at the (e.g., process-supporting) process potential. As soon as the potential receiving surface leaves the processing area, it can be galvanically separated from the (e.g., process-supporting) process potential. The length of the separation area can be greater than the length of the potential receiving surface.

[0063] The potential transmitter may, for example, comprise one or more than one contact element (for example, several contact elements coupled to one another ohmically and / or by means of a circuit), each contact element being at the (e.g. process-supporting) process potential and being configured to physically contact the potential receiving surface depending on the position of the potential receiving surface.

[0064] Reference is made herein to potential paths (e.g., potential mediators) implemented using transport rollers as exemplary contact elements, for example, two or more transport rollers per potential path. What is described here can apply analogously to other implementations of the contact elements or other implementations of the potential paths, e.g., the potential mediator. Other examples of implementations of contact elements include: sliding contact, rolling contact (which does not necessarily have to be a transport roller), driver contact, and / or mixtures thereof. The length of the separation region can, for example, range from approximately PI to approximately PI+DD, where PI denotes the length of the potential receiving surface and DD the rotation axis distance.

[0065] According to various embodiments, the (e.g., process-supporting) process potential can be provided by means of a voltage supply (e.g., in the case of a process potential different from electrical ground). For example, each contact element (e.g., transport roller) by means of which a potential path (e.g., potential transmitter) is implemented can be electrically connected (e.g., by means of an insulating rotary feedthrough and / or a circuit) to an electrical connection (e.g., outside the chamber system) of the potential paths (e.g., the potential transmitter) to which, for example, the voltage supply or electrical ground is connected. Optionally, a short-circuit monitor can be provided, which is configured to (e.g., galvanically) separate the voltage supply from the contact elements if a current exchanged between them exceeds a threshold value.

[0066] For example, the transport rollers by means of which the separation agent is implemented can be galvanically separated from each other and / or from the (e.g. process-supporting) process potential.

[0067] Transport goods are understood here as an object that is transported, for example, by means of multiple transport rollers. The term "plate-shaped" in this context is understood as having a length and width that are one or more orders of magnitude greater than the height. A plate-shaped object does not necessarily have to be cuboid-shaped, but can have one or more uneven surfaces, one or more uneven edges, one or more depressions, or similar features.

[0068] For example, the transported material can act as an electrode (e.g. anode or cathode) of the process (e.g. for forming the plasma) to which the transported material is exposed when (e.g. as soon as and / or as long as) the (e.g. process-supporting) process potential is coupled to the transported material.

[0069] Fig. 1 illustrates a transport system 100 according to various embodiments (for example, according to Example 1) in a schematic side view or cross-sectional view, in which the electrical wiring is schematically illustrated in a diagram as an equivalent circuit. Each of the transport rollers 112 can be rotatably mounted, e.g., about a rotational axis 112d of the transport roller, which is transverse to the transport path 111. The rotational axes of the transport rollers 112 can, for example, be arranged parallel to one another and / or in a plane that is, for example, parallel to the transport path 111 and / or to the transport surface.

[0070] For the purposes of the following explanation, n can be understood as a natural number, e.g., 1, 2, etc. An n-th potential path (here, for example, first potential mediator 161 and second potential mediator 163) is assigned to the n-th processing area (here, for example, first potential mediator 161 and second potential mediator 163). The geometry of the n-th processing area is a function of the geometry of the respectively assigned n-th potential paths (e.g., potential mediator) and / or the geometry of the transported material 110 (e.g., its potential absorption area), for example with regard to the extent along the transport path 111 (also referred to as length). For example, the length (e.g., 1511 or 1531) of the n-th processing area is a function of the length of the n-th potential path (e.g., potential mediator) and / or the length of the potential absorption area. As soon as the transported goods 110 (e.g. its potential receiving surface) are separated from the n-th potential path (e.g.As soon as the transported material 110 (e.g., its potential receiving surface) is decoupled (e.g., galvanically separated) with the nth potential path (e.g., potential mediator), the transported material 110 enters the nth processing area.

[0071] In an exemplary implementation of the structure of the transport system 100, the first potential mediator 161 and the second potential mediator 163 are arranged one behind the other along the transport path 111, e.g., with the potential separator 165 being arranged between them. Analogously, the first processing region 151 and the second processing region 153 are arranged one behind the other along the transport path 111 and / or are spatially separated from one another, e.g., by means of a separation region 155 (e.g., arranged between them). The separation region 155 can, for example, be adjacent to the first processing region 151 and / or the second processing region 153.

[0072] In an exemplary implementation of the multiple transport rollers 112, each transport roller has two roller stubs that are mounted for rotation about the rotational axis 112d of the transport roller 112 and are spatially separated from each other along the rotational axis 112d. This enables processing on both sides. A (e.g., elongated) supporting section of the transported goods can rest on each of the roller stubs during transport.

[0073] In an exemplary implementation of the (e.g., process-supporting) process potentials, the (e.g., process-supporting) process potential P1 of the first type (also referred to as the first process potential), which is provided by means of the first potential mediator 161, and the (e.g., process-supporting) process potential P2 of the first type (also referred to as the second process potential), which is provided by means of the second potential mediator 163, differ from each other, for example by approximately 10 volts (V) or more, e.g., by approximately 50 V or more, e.g., by approximately 100 V or more.

[0074] The following refers to a so-called contact configuration of the potential paths (e.g., potential mediator) and exemplary implementations thereof according to Example 3, which is implemented by means of at least one transport roller as a contact element (then also referred to as a rolling contact configuration), by means of which the electrical potential is coupled into the potential receiving surface. Thus, the potential receiving surface is in (e.g., physical and / or electrical) contact with the nth potential path (e.g., potential mediator) as long as the transported material is arranged in the nth processing area. In this regard, it can be understood that the contact configuration can alternatively or additionally be set up by means of a sliding contact and / or another roller (which does not necessarily have to serve the transport purpose) that contact the potential receiving surface.

[0075] An exemplary contact configuration of the first potential transmitter 161 according to Example 3 is implemented by means of one or more than one transport roller (also referred to as a potential transmitter roller) of a first group 112a of the plurality of transport rollers 112 (also referred to as the first transport group), whose rotational axes are arranged in the first processing area 151. For this purpose, the first process potential P1 can, for example, be applied to one or more than one potential transmitter roller of the first transport group 112a.

[0076] An exemplary contact configuration of the second potential transmitter 163 according to Example 3 is implemented by means of one or more than one transport roller of a second group 112b of the plurality of transport rollers 112 (also referred to as a second transport group), whose rotational axes are arranged in the second processing area 153. For this purpose, the second process potential P2 can, for example, be applied to one or more than one potential transmitter roller of the second transport group 112b.

[0077] An exemplary implementation of the potential separator 165 according to Example 4 is implemented by means of one or more than one (e.g., each) transport roller of a third group 112c of the plurality of transport rollers 112 (also referred to as a third transport group), which is arranged between the first processing region 151 and the second processing region 153 (e.g., in the separation region 155). The third transport group 112c can, for example, comprise all transport rollers arranged between the first processing region 151 and the second processing region 153 (e.g., in the separation region 155). Each transport roller of the third transport group 112c can, for example, have a dielectric outer surface and / or be mounted galvanically separated from one another.

[0078] An exemplary implementation of the potential separator 165 (e.g., the third transport group 112c) can be galvanically separated (illustrated here by a capacitor), e.g., from its surroundings, including the reference potential, the first process potential P1, and / or the second process potential P2. For example, each transport roller of the third transport group 112c can be mounted in a galvanically isolated manner, e.g., by means of a dielectric.

[0079] In an exemplary implementation of the contact configuration according to Example 2, one or more than one potential-transmitting roller of the first transport group 112a and / or the second transport group 112b has an electrically conductive (e.g., metallic) outer surface and is optionally configured to be electrically conductive. The potential-transmitting rollers of the first transport group 112a and / or the second transport group 112b are then electrically (e.g., ohmically) coupled to one another (e.g., by means of a circuit) and / or galvanically separated from a transport group immediately adjacent thereto. In the exemplary implementation of the contact configuration, each transport roller of the third transport group 112c can have a dielectric outer surface and / or be mounted by means of a dielectric.

[0080] The capacitor coupled to the potential separator 165 can be understood as representing a galvanic (e.g., floating) separation of the potential separator 165 from electrical ground, the chamber body, and / or the first process potential P1 and / or second process potential P2, and does not necessarily have to be present. For example, the potential separator 165 can be free of any electrical connection.

[0081] The generator (e.g., DC generator) coupled to the first and / or second potential transmitter 161, 163 can be understood as representing a source for the respective process potential P1, P2. The (e.g., process-supporting) process potential can also be provided in a different way in an analogous manner, for example, by means of a coupling to electrical ground if the (e.g., process-supporting) process potential is, for example, electrical ground. A generator, on the other hand, can facilitate varying the (e.g., process-supporting) process potential provided by it, for example, according to a target potential or based on a processing result.

[0082] The diagrams of the potential path interconnections are intended to be understood as schematic. The respective interconnections can also be spatially arranged differently, for example, at a different location and / or with a different orientation. For example, the interconnections can also be arranged below the transport rollers or integrated into other components.

[0083] Further exemplary implementations of the contact configuration are explained below.

[0084] Fig.2A and Fig.2B illustrate the transport system 100 according to various embodiments in a schematic side view or cross-sectional view at a first time 200a and a second time 200b, wherein the potential mediator role(s) are shown hatched.

[0085] According to various embodiments, the distance 1551 (also referred to as separation distance) of the first processing region 151 from the second processing region 153, which corresponds, for example, to the length 1551 of the separation region, is a function of the geometry (e.g., length) of the transported item 110, e.g., the length of the potential receiving surface 110p, and / or the rotation axis distance. For example, the separation distance is a multiple of the rotation axis distance, e.g., k times the rotation axis distance (where k is a natural number) and / or greater than the length of the potential receiving surface.

[0086] In an exemplary implementation, the separation distance is smaller than a sum (also referred to as the effective sum) of the length 1101 of the potential-receiving surface 110p and the distance 112d between immediately adjacent rotational axes of the plurality of transport rollers (also referred to as the rotational axis distance 112d). For example, the separation distance is smaller than approximately 95% of the effective sum, e.g., approximately 90% of the effective sum, e.g., approximately 80% of the effective sum, e.g., approximately 70% of the effective sum.

[0087] The rotational axis distance 112d can, for example, relate to the third transport group 112c and the first transport group 112a (or second transport group 112b). The rotational axis distance 112d can, for example, be the distance of the rotational axis of that potential mediator roller T1 of the first transport group 112a (also referred to as potential mediator roller) that is immediately adjacent to the third transport group 112c from that transport roller T2 of the third transport group 112c (also referred to as float roller T2) that is immediately adjacent to the first transport group 112a.The rotation axis distance 112d can, for example, be the distance of the rotation axis of that potential mediator roller T4 of the second transport group 112b which is immediately adjacent to the third transport group 112c, from that transport roller T3 of the third transport group 112c (also referred to as the releasing float roller T3) which is immediately adjacent to the second transport group 112b.

[0088] This makes it possible to minimize the installation space for a configuration in which the transported goods are transported without a short circuit between the first processing area 151 and the second processing area 153.

[0089] In the exemplary implementation or an alternative exemplary implementation, the separation distance is less than a sum (also referred to as the length sum) of the length 1511 of the first processing area 151 (also referred to as the first process length 1511) and the length 1531 of the second processing area 1531 (also referred to as the second process length 1531). For example, the length sum is a multiple of the rotation axis distance, e.g., k times the rotation axis distance (where k is a natural number). For example, the separation distance is less than 90% of the length sum, e.g., 75% of the length sum, e.g., 60% of the length sum.

[0090] This makes it possible to minimize the installation space for a configuration in which the transported goods are transported without short circuits between the first processing area and the second processing area.

[0091] In the following, exemplary implementations of the transported goods, which are set up as substrate carriers, are explained.

[0092] Fig. 3 illustrates a substrate carrier 300 according to various embodiments in a schematic plan view or cross-sectional view. The substrate carrier 300 has two support sections 302, which are configured to rest on one or more transport rollers, e.g., the roller stub thereof, during transport. The substrate carrier 300 further has a support body 304, which is arranged between the two support sections 302 and / or coupled to them.

[0093] The two support sections 302 are, for example, parallel to each other, elongated, and / or strip-shaped. Alternatively or additionally, the underside of each of the two support sections 302 and / or the (e.g., each) potential receiving surface of the substrate carrier 300 are planar.

[0094] In the rolling contact configuration, one or more of the two support sections 302 can have a (e.g., planar) potential receiving surface 110p, e.g., on the underside thereof. For example, one or more of the two support sections 302 is configured to rest with its potential receiving surface 110p on one or more transport rollers, e.g., the roller stub thereof, during transport.

[0095] An exemplary implementation of the support body 304 has one or more substrate receiving areas 304s (e.g., in the form of a recess, also referred to as a substrate pocket). Alternatively or additionally, the support body 304, e.g., in each of the substrate receiving areas 304s, can be penetrated by a through-opening, e.g., from a top side to a bottom side of the substrate carrier 300.

[0096] An exemplary implementation of the or each substrate receiving area 304s according to Example 5 has a substrate support surface (e.g., surrounding the through-opening) on ​​which the substrate can be placed. The substrate support surface is electrically coupled to one or more of the two support sections 302 (e.g., their potential receiving surface), which facilitates coupling the (e.g., process-supporting) process potential into the substrate.

[0097] Fig. 4A and Fig. 4B each illustrate a row of two substrate carriers 300 according to various embodiments (e.g., based on Example 7 and / or 19) in a schematic side view 400a and a top view 400b. Each of the substrate carriers 300 has two shielding panels 402f, 402h, between which, for example, the support body 304 of the substrate carrier 300 is arranged. The shielding panels 402f, 402h clearly promote the most uniform field distribution possible, so that the plasma is continuously maintained when the substrate carriers are moved.

[0098] A length of each shielding aperture 402f, 402h can, for example, be greater than approximately 1 centimeter (cm), e.g., than approximately 2 cm, e.g., than approximately 10 cm, e.g., than approximately 20 cm. This inhibits the parasitic plasma influence even more effectively. A length of each shielding aperture 402f, 402h can, for example, be approximately 50 centimeters (cm) or less, e.g., approximately 40 cm or less, e.g., approximately 30 cm or less, e.g., approximately 25 cm or less. This maximizes the number of substrates along the transport path. In an exemplary implementation, the distance between two directly adjacent substrate carriers in a continuous flow system in the process area is approximately 25-45 mm. This distance is closed by means of a wedge-shaped shielding aperture 402f, 402h with a length of approximately 25 cm, without the two substrate carriers touching each other.

[0099] In an exemplary implementation, the shielding panels 402f, 402h of a substrate carrier 300 can differ from one another in their distance from the transport path 111 and / or a transport surface adjacent to the plurality of transport rollers 112. This prevents collisions between directly adjacent substrate carriers 300.

[0100] Alternatively or additionally, each of the shielding panels 402f, 402h is wedge-shaped, which makes it easier to adjust their distance from one another and / or prevents contact between them due to thermal distortion. As an example, each of the wedge-shaped shielding panels 402f, 402h can provide a boundary surface (also referred to as gap boundary surfaces) that runs at an angle (also referred to as gap angle) to the transport path 111 (then also referred to as inclined gap boundary surfaces). The gap angle can, for example, be greater than 1°, e.g., than 5°, e.g., than 10°. In an exemplary implementation, the shielding panels 402f, 402h of a substrate carrier 300 can differ from one another in the distance of their gap boundary surface from the transport path 111 and / or a transport surface adjacent to the plurality of transport rollers 112. This prevents directly adjacent substrate carriers 300 from colliding with one another.

[0101] If the shielding panels 402f, 402h of the two directly adjacent substrate carriers 300 overlap, the parasitic plasma effect is inhibited even more strongly. A gap 410 can be formed between the overlapping shielding panels 402f, 402h, which, for example, runs at the gap angle. The inclined gap boundary surfaces clearly ensure that the gap 410 remains as narrow as possible, even if the shielding panels 402f, 402h overlap only slightly, which further inhibits the parasitic plasma effect.

[0102] In an exemplary implementation of the substrate carrier 300 (e.g., according to Example 7 and / or 19), the length of the support sections 302 and / or the potential receiving surface 110p is equal to or greater than a distance between the two support sections 302 of a substrate carrier 300. For example, an additional gap 420 (also referred to as a detection gap) is formed between the support sections 302 of successively transported substrate carriers 300, between which gap 410 is arranged (e.g., adjacent thereto).

[0103] In an exemplary implementation of the operation of the transport system (e.g., according to Example 9), the rotational movement of the transport rollers relative to one another can be configured (e.g., controlled by the control device) to form a row of substrate carriers arranged one behind the other along the transport path, each pair of two immediately adjacent substrate carriers overlapping each other (at least with the shielding panels), e.g., without touching each other. For example, the operation of the transport device can be controlled and / or regulated according to a desired distance between the pair of two immediately adjacent substrate carriers.

[0104] For example, the transport system may have one or more sensors configured to detect the transported item 110 (e.g., its position and / or speed), for example, by detecting the detection gap 420. The rotational movement of the transport rollers 112 may, for example, be based on the transported item detected by the sensor. For example, the detection gap 420 may have a length of approximately 10 centimeters (cm) or more, e.g., approximately 20 cm or more, e.g., approximately 30 cm or more.

[0105] Fig.5A and Fig.5B each illustrate a substrate carrier 300 according to various embodiments 500a, 500b (e.g. based on example 7 and / or 19) in a schematic plan view.

[0106] According to embodiments 500a, the substrate receiving area 304s has a support surface 502 onto which the substrate can be placed.

[0107] For example, the support surface 502 can at least partially delimit a recess (e.g., its underside) into which the substrate can be inserted. The recess 502 can, for example, extend at least partially through the substrate receiving area 304s.

[0108] According to embodiments 500a (e.g., based on example 23 or 24), the stabilizing section, which is arranged between the support section 302 and the substrate receiving area 304s, comprises webs 510s and openings 510o, which are arranged alternately in a row along the transport path. This minimizes the thermal expansion of the substrate carrier 300 (e.g., the support sections 302 thereof), since the openings 510o do not contribute to heat conduction and thus inhibit heat exchange to the support sections 302.

[0109] Fig. 6A and Fig. 6B each illustrate a vacuum arrangement 600a, 600b according to various embodiments (e.g., based on Example 10 and / or 11) in a schematic side view or cross-sectional view. The vacuum chamber system may comprise a plurality of vacuum chambers 802, by means of which a number K of vacuum sections (6-1 to 6-K) are provided, through which the transport path 111 extends.

[0110] The transport path 111 can, for example, extend through two vacuum chambers 6-1 and 6-K, which are configured and / or operated as lock chambers (also referred to as vacuum locks). Alternatively or additionally, each of the vacuum sections can be coupled to a pump arrangement 604.

[0111] According to vacuum arrangement 600a, each of the lock chambers 6-1 and 6-K can be adjacent to a return system 602, which is configured to transport back the transported goods discharged from the vacuum chamber system by means of the rear lock chamber 6-K and to feed them back to the vacuum chamber system by means of the front lock chamber 6-1.

[0112] Some of the vacuum sections arranged between the two vacuum locks are assigned to a processing device, by means of which a processing region is provided in the vacuum section. Examples of types of processing device are configured to coat the transported material with a target material (then also referred to as a coating device), remove material from the transported material (also referred to as an etching device), heat the transported material (also referred to as a heating device) and / or at least chemically modify it (also referred to as a pretreatment device). One or more than one processing device (e.g., coating device, etching device, heating device and / or pretreatment device) is configured to stimulate the formation of a plasma (also referred to as plasma formation) in the processing region (also referred to as a plasma processing region) to which the transport path 111 is exposed.

[0113] For example, the vacuum section 6-i can be configured as an etching region by means of an etching device, in which a plasma is generated by means of the etching device. For example, the vacuum section 6-i can be configured as a coating region by means of a coating device, in which a plasma is generated by means of the coating device. The plasma can, for example, be configured to atomize (also referred to as sputtering) a target material, which is emitted toward the transport path.

[0114] In an exemplary implementation (e.g., based on Example 12), plasma formation is stimulated by means of an electric field provided by a plasma-forming process potential, which is coupled, for example, into a target material of the processing device. Furthermore, the process-supporting process potential, which is coupled into the transport material, contributes to the acceleration of ions from the plasma toward the transport material. For example, for each plasma processing region, two electric potentials can be provided as process potentials, which cause an electric field, one of which is coupled to the transport material as a process-supporting process potential (then also referred to as a bias potential), and / or the other is coupled to the processing device (e.g., an electrode thereof) as a plasma-forming process potential (also referred to as an electrode potential).

[0115] According to vacuum arrangement 600b, two (e.g., directly adjacent) first potential mediator rollers 652, whose rotational axes border the first processing area 151, can provide the first potential mediator. The two first potential mediator rollers 652 can, for example, be at the first process potential and be configured to couple the first process potential to a transported item 110 when the latter touches at least one of the first potential mediator rollers 652 (e.g., at least one roller stub thereof). For example, the first process potential can be electrical ground.

[0116] According to the vacuum arrangement 600b, two (e.g., directly adjacent) second potential mediator rollers 654, whose axes of rotation border the second processing area 153, can further provide the second potential mediator. The two second potential mediator rollers 652 can, for example, be at the second process potential and be configured to couple the second process potential to a transport item 110 when it touches at least one of the second potential mediator rollers 652 (e.g., at least one roller stub thereof). For example, the first process potential can differ from the second process potential, e.g., by 10 V or more, e.g., by 50 V or more, e.g., by 100 V or more, e.g., by 150 V or more.

[0117] According to the vacuum arrangement 600b, a plurality of float rollers 656 may further be arranged between the first potential mediator rollers 652 and the second potential mediator rollers 654 and electrically separated therefrom.

[0118] In an exemplary implementation, the distance between directly opposite rotational axes of two potential mediator rollers, between which the plurality of float rollers are arranged, can be equal to the separation distance. The separation distance can be greater than a length of the transported material 110.

[0119] A vacuum chamber 802 can be provided, for example, by means of a chamber housing in which one or more vacuum chambers can be provided. The chamber housing can be coupled, for example, to a pump arrangement, e.g., a vacuum pump arrangement, for providing a negative pressure or a vacuum (vacuum chamber housing), and can be configured so that it can withstand the effects of air pressure in the pumped-out state. The pump arrangement (comprising at least one vacuum pump, e.g., a high-vacuum pump, e.g., a turbomolecular pump) can make it possible to pump out part of the gas from the interior of the vacuum chamber 802. The or each vacuum chamber 802 can optionally have a chamber lid that seals the interior of the vacuum chamber 802 in a vacuum-tight manner. The plasma of the arc discharge can accordingly have a negative pressure (e.g., a vacuum).

[0120] The chamber housing, e.g. a vacuum chamber 802 provided therein, may be configured such that a negative pressure (i.e. a pressure less than atmospheric pressure) can be provided therein, e.g. a vacuum (i.e. a pressure of less than 0.3 bar), e.g. a pressure in a range of approximately 10 mbar to approximately 1 mbar (in other words rough vacuum) or less, e.g. a pressure in a range of approximately 1 mbar to approximately 10 3 mbar (in other words fine vacuum) or less, e.g. a pressure in a range of approximately 10 3 mbar to approximately 10 7 mbar (in other words high vacuum) or less, e.g. a pressure less than high vacuum, e.g. less than about 10 7 mbar. Atmospheric pressure (e.g., 1 bar) can be the pressure acting on the chamber housing from the outside.

[0121] The following describes various aspects of working examples and application scenarios that relate to what is described herein and shown in the figures.

[0122] According to various aspects, the transported material can comprise a substrate carrier, by means of which, for example per substrate carrier, a substrate is transported which is inserted in a recess of the substrate carrier.

[0123] According to various aspects, the substrate may comprise a bipolar plate or component thereof. Alternatively or additionally, a result of processing the substrate using the plasma may be used to manufacture a fuel cell and / or an electrolyzer.

[0124] According to various aspects, a highly productive PVD series coating system (PVD = physical vapor deposition) is combined in an inline process (also referred to as sheet-to-sheet) with the application area of ​​PEM electrolysis and the required and specific process units and / or technologies. This applies analogously to AEM (Anion Exchange Membrane), SOEC (Solid Oxide Electrolyzer Cell), SOFC (Solid Oxide Fuel Cell), and a redox flow battery. In contrast to batch coating, the PVD series coating system achieves continuous coating by cyclically transferring the components on a substrate carrier into and out of the system.The substrate carrier can be guided either horizontally or vertically through the coating system and the substrates are processed on both sides, for example, simultaneously on their front and back. Therefore, two coating devices (also referred to as coating units) can be present per processing area, between which the transport surface is arranged (e.g., arranged opposite each other on both substrate sides). The substrates are metallic, which allows for the selection and scaling of specific technologies. After the substrate carrier is loaded with the substrates or components (also referred to as electrolyzer or fuel cell components) for the production of an electrolyzer, e.g.PEM electrolyzer (PEM = proton exchange membrane) and / or a fuel cell in at least one pump compartment (also known as a lock chamber) from atmospheric pressure to vacuum base pressure, it is accelerated through a transfer chamber towards the continuously moving substrate carrier chain (a row of substrate carriers arranged one behind the other) until it reaches the position directly behind the last substrate carrier and is decelerated to the transport speed of the continuous substrate carrier chain. After the substrate carrier has passed through all process stations in the continuous substrate carrier chain, it can leave the chain again and be discharged from the system. For this purpose, the substrate carrier is accelerated again through a transfer chamber into a pump compartment and brought from vacuum to atmospheric pressure in at least this one pump compartment at regular intervals.The first processing area, which the substrate carrier chain passes through, is set up for pretreatment to remove a native oxide layer of the metallic substrate, often with the objective of maximizing etching rates. Magnetron sputter etching, for example, is used for this purpose. A box with an opening to the substrate surface is arranged on one side of the substrate and a magnet is arranged on the other side of the substrate. A working gas is introduced into the box, and by applying a process voltage to the box, a plasma is ignited and / or the working gas is ionized. The plasma ions are accelerated onto the substrate by the electrical grounding of the substrate and the magnet located behind the substrate, and remove the native oxide layer by sputtering.The magnet behind the substrate clearly traps the electrons of the ionized working gas within the magnetic field, thus maximizing ionization in this area. The ground potential then promotes the acceleration of the ions toward the substrate. Further processing areas follow, in which a functional layer is applied using magnetron sputtering. The coating processing areas are characterized, for example, by the use of tubular targets to provide the target material. One or two (e.g., tubular) targets can be arranged on each side of the substrate per processing area.

[0125] According to various aspects, a precious metal is deposited on the substrate, e.g. gold and / or platinum, and / or another material is deposited, such as carbon, a nitride, and / or nickel. In this case, the same coating material can be applied to both sides of the substrate in one processing area, or the coating material (also referred to as target material) can be different on both sides. For example, gold can be applied to the front side and platinum to the back side at the same time. Optionally, a metallic intermediate layer can be applied between the substrate and the precious metal coating to ensure the adhesion of the precious metal coating to the substrate. The substrate carrier and / or the substrates can be brought to a different electrical potential in each processing area. For this purpose, the substrate carrier is electrically contacted either directly or via the transport rollers.The electrical potential can correspond to a grounding or an additional negative bias voltage applied in DC mode (direct current mode). To ensure that a substrate carrier is only brought to one potential and that there is no electrical contact with upstream or downstream potential mediators, separation mediators can be installed in the coating system. Furthermore, the substrate carriers are designed to overlap with the front and rear substrate carriers in the substrate carrier chain, preventing gaps between the substrate carriers from passing through the process units, which, for example, promotes the formation and / or stability of the plasma (e.g., etching plasma).

[0126] According to various embodiments, electroplating or PVD coating can be used to coat metallic components, for example, in less productive batch systems. In contrast, the inline coating system offers higher productivity and thus reduced production costs for coating metallic components for PEM electrolysis.

[0127] Fig. 7A illustrates a sputtering device of the sputter etching device type (then also referred to as a sputter etcher) as an exemplary processing device 700a in a schematic side view or cross-sectional view according to various embodiments, which, if it has a magnet system 714, is also referred to as a magnetron sputter etching device. The sputter etcher operates according to the principle of magnetic field-enhanced sputter etching (also referred to as magnetron sputter etching). Process gas 708 is introduced into the anode box 702. A voltage 710, e.g., high voltage, is applied to the anode box 702, igniting a plasma. The substrate 706 is at ground potential 704. The plasma 712 (e.g., a magnetron discharge) burns on the substrate, and the substrate becomes the sputter cathode. Atoms in the process gas are ionized and accelerated toward the substrate.Impacts eject atoms or molecules from the substrate's surface. The magnet system 714, if present, located on the other side of the substrate, promotes the magnetron discharge. The magnet system 714 captures the discharge electrons in a closed chamber.

[0128] area so that the magnetron discharge and the associated etching power is provided on the substrate, for example in the form of a racetrack.

[0129] Fig.7B illustrates a transport system according to various embodiments 700b having a dark field shield.

[0130] The illustrated exemplary implementation of the transport system has, for example, a bearing device 752 per roller stub, by means of which a transport roller 112 (for example, the roller stub thereof) is rotatably mounted. The bearing device 752 can, for example, be supported on the vacuum chamber 802, for example, a chamber wall thereof, and / or extend through a through-opening of the vacuum chamber 802 (for example, the chamber wall). The bearing device 752 has, for example, a pivot bearing 752I, by means of which the transport roller 112 is rotatably mounted.

[0131] An exemplary implementation of the bearing device 752 is electrically separated from the vacuum chamber 802 (e.g., the chamber wall), e.g., by means of a dielectric 754 (or another electrically insulating material). This implements a galvanically isolated support of the transport roller 112. Alternatively or additionally, the bearing device 752 can be coupled to an electrical circuit, which can be configured, for example, to apply a (e.g., process-supporting) process potential P1 to the bearing device 752 (e.g., during operation). This implements the transport roller 112 configured as a potential mediator roller.

[0132] The illustrated exemplary implementation of the transport roller 112 is configured as a passive transport roller 112. To provide an active transport roller 112, the bearing device 752 can have a rotatably mounted shaft (not shown) that implements the (e.g., insulating) rotary feedthrough. The shaft can be or become coupled, for example, to the drive system, for example, according to Example 8.

[0133] The dark field shield 758 can be electrically conductive (and / or metallic) and / or arranged close to the transport roller 112 and / or the bearing device 752. Close in this context can be understood as having a distance of less than approximately 0.7 cm, e.g., approximately 0.5 cm, e.g., approximately 0.3 cm, wherein the gap must be at least 0.05 cm, for example. This inhibits the formation of a plasma to which the transport roller 112 and / or the bearing device 752 is exposed.

[0134] Dark field shielding 758 may, for example, be provided by a wall and / or be electrically floating, e.g., by means of a dielectric 758I (or other electrically insulating material). An exemplary implementation of dark field shielding 758 is provided by means of a (e.g., cylindrical) tube (or similarly shaped shell) in which transport roller 112 and / or bearing device 752 is arranged.

[0135] The dark field shield 758 can, for example, be electrically floatingly mounted using a plastic dielectric 758I. Alternatively or additionally, the dielectric 758I can contact the dark field shield 758, the transport roller 112 and / or the bearing device 752.

[0136] An exemplary process sequence according to various embodiments comprises the following process: etching one or more than one metallic substrate by means of a magnetron sputter etching and / or by means of ion bombardment of the substrate; coating the result thereof (comprising the metallic substrate) with one or more intermediate layers by means of sputtering; coating the result thereof (comprising the metallic substrate and one or more than one intermediate layer thereon) with a final functional layer by means of

[0137] Sputtering.

Claims

Patent claims 1 . T ransport system (100), comprising: • a plurality of transport rollers (112) which provide a transport path (111) and are configured to transport a transport item (110, 300) along the transport path (111) through a first processing area (151) and a second processing area (153); • the transported goods (110, 300), which have an electrically conductive potential receiving surface; • several potential paths (161, 163, 165) arranged one behind the other along the transport path (111) and galvanically separated from one another; of which: • a first potential path is configured to couple a process potential of the first type to the potential receiving surface when the potential receiving surface is arranged at least partially in the first processing region (151); • a second potential path is configured to couple a process potential of a second type to the potential receiving surface when the potential receiving surface is arranged at least partially in the second processing region (153); • a third potential path is configured to galvanically separate the potential receiving surface when the potential receiving surface is arranged between the first processing region (151) and the second processing region (153); wherein a distance of the first processing region (151) from the second processing region (153) is smaller than a sum of: • an extension of the potential absorption area along the transport path (111) and • a distance between directly adjacent axes of rotation of the plurality of transport rollers (112), which are preferably arranged between the first processing area (151) and the second processing area (153).

2. Transport system (100) according to claim 1, wherein the first potential path and / or the second potential path are configured to couple the process potential of the potential receiving surface by means of one or more than one transport roller of the plurality of transport rollers (112).

3. Transport system (100) according to claim 1 or 2, wherein a group of the transport rollers arranged in the first processing area have an at least partially electrically conductive outer surface and are electrically coupled to one another.

4. Transport system (100) according to one of claims 1 to 3, wherein the third potential path is implemented by means of one or more than one galvanically insulated transport roller of the plurality of transport rollers (112) which is arranged between the first processing area (151) and the second processing area (153).

5. Transport system (100) according to claim 4, wherein the transport roller is mounted in a galvanically insulated manner by means of a dielectric.

6. Transport system (100) according to one of claims 1 to 5, wherein the transported material (110, 300) is configured as a substrate carrier (300) having one or more than one substrate support surface for placing a substrate, which is electrically coupled to the substrate receiving surface.

7. Transport system (100) according to one of claims 1 to 6, wherein the transported goods (110, 300) have two opposite end faces relative to the transport path (111), of which one or more than one end face has a surface extending obliquely to the transport path (111), preferably at an angle at which the two end faces coincide.

8. Transport system (100) according to claim 7, comprising the transported goods: • a substrate receiving area (304s), preferably provided by means of a recess, for receiving a substrate; • two support sections (302) extending along a transport direction, between which the substrate receiving area (304s) is arranged and which adjoin a transport surface; • two shielding panels (402f, 402h) arranged at the front with respect to the transport direction, between which the substrate receiving area (304s) is arranged, each shielding panel being provided by means of one of the two front sides and: • extends away from the substrate receiving area (304s), and • has a surface which is inclined to the transport surface.

9. Transport system (100) according to claim 8, comprising the transported goods: • for each of the support sections (302), a stabilizing section (510) which is arranged between the support section and the substrate receiving area, wherein the stabilizing section (510) has a lower thermal conductivity than the support section (302).

10. Transport system (100) according to claim 7 or 8, wherein the two shielding panels differ from each other in their distance from the transport surface:

11. Transport system (100) according to one of claims 7 to 10, further comprising: • a drive system configured to drive a rotational movement of at least some of the plurality of transport rollers (112); and • a control device which is designed to control the drive system in such a way that a row of transport goods (110, 300) transported by means of the rotary movement, which the transport goods (110, 300) have, overlap with their end faces.

12. Vacuum arrangement, comprising: • the transport system (100) according to one of claims 1 to 11, • a vacuum chamber system having two vacuum locks and between them at least one vacuum section having the first processing area (151) and the second processing area (153); • a first processing device configured to provide a first process in the first processing region (151) by means of the first type of process potential to which the transport path (111) is exposed; • a second processing device which is configured to provide a second process in the second processing region (153) by means of the second type of process potential to which the transport path (111) is exposed.

13. The vacuum arrangement according to claim 12, wherein the first process is performed by means of a plasma exposed to the first type of process potential; and wherein the second process is performed by means of a plasma exposed to the second type of process potential.

14. Vacuum arrangement according to claim 12 or 13, wherein the first process and the second process differ from each other in a side of the transported material which is exposed to the respective process.

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