Microwave annealing apparatus

Abstract

The present invention relates to a microwave annealing apparatus capable of forming a dielectric material inside a waveguide and uniformly heating a semiconductor substrate by transmitting microwaves into a processing chamber through the dielectric material. The microwave annealing apparatus includes: the processing chamber having a predetermined inner space; a microwave generating unit which is installed outside the processing chamber and generates microwaves; and a waveguide which has one end connected to the microwave generating unit and the other end inserted into the processing chamber, has at least one slot formed on one surface of a portion thereof inserted into the processing chamber, and transfers the microwaves generated by the microwave generating unit, into the processing chamber through the dielectric material formed in at least one of the inner space and the slot to heat a substrate placed in the processing chamber.

Description

Microwave heat treatment device

[0001] [Cross-reference to related applications]

[0002] This application claims priority to Republic of Korea Patent Application No. 10-2024-0039866, filed March 22, 2024, the entire contents of which are incorporated herein by reference.

[0003] The present invention relates to a microwave heat treatment device, and more specifically, to a microwave heat treatment device that can uniformly heat a semiconductor substrate using microwaves.

[0004] During the semiconductor manufacturing process, the annealing process is used to rearrange amorphous materials, remove defects in crystalline materials, and remove and recrystallize dopants in amorphous or crystalline materials.

[0005] These heat treatment processes include furnace processes, rapid thermal processes (RTP), flash heat treatment processes, and laser heat treatment processes.

[0006] However, the furnace process uniformly performs the heat treatment process at high temperatures of 800℃ to 1100℃, and there is a problem that the uniform heat treatment process within the semiconductor device, which contains a mixture of various materials with different temperature characteristics, lowers the overall yield and performance of the semiconductor device.

[0007] The rapid heat treatment process, like the furnace process, has the problem of deteriorating the performance of semiconductor materials and causing unwanted dopant diffusion into surrounding materials because the heat treatment process is performed at high temperatures of 800°C to 1100°C.

[0008] In addition, the flash heat treatment process and the laser heat treatment process have the inconvenience of having to perform the heat treatment process multiple times while moving each time to cover the entire doped area because the boundary of the impurity region moves during the heat treatment process, and the area within the laser spot size of several millimeters in diameter is activated, but it is much smaller than the entire area required for activation on the wafer surface, and the uniformity of the heat treatment in the depth direction is not secured, which limits reproducibility and mass production. As a result, there is a problem that a pattern effect occurs in which areas overlap or are missing when a pattern is formed, resulting in a decrease in productivity due to the pattern effect.

[0009] To solve these problems, heat treatment processes are conventionally performed using microwaves.

[0010] This microwave-assisted heat treatment process can improve the performance of semiconductor devices due to its low processing temperature, minimize unwanted diffusion, and can be used in semiconductor processes such as heat treatment of dielectric materials containing metals (e.g., Al, Ni, etc.) that could not be used in heat treatment processes above 800°C.

[0011] In addition, the heat treatment process using microwaves has the advantage of not only a change in the state of the material due to an increase in the thermal temperature of the sample, but also a process effect due to a non-thermal effect caused by the kinetic energy of the sample atoms affected by the microwaves.

[0012] As described above, when performing a heat treatment process using microwaves, it is necessary to uniformly heat the semiconductor substrate by uniformly radiating microwaves to the semiconductor substrate.

[0013] The present invention has been devised in consideration of the above-mentioned needs, and its purpose is to provide a microwave heat treatment device that forms a dielectric material inside a waveguide and transmits microwaves into a processing chamber through the dielectric material to uniformly heat a semiconductor substrate.

[0014] In order to achieve the above-described object, a microwave heat treatment device according to the present invention comprises: a treatment chamber having a predetermined space inside; a microwave generator installed outside the treatment chamber to generate microwaves; and a waveguide having one end connected to the microwave generator, the other end inserted inside the treatment chamber, at least one slot formed on one surface of a portion inserted inside the treatment chamber, and transmitting microwaves generated by the microwave generator into the treatment chamber through a dielectric material formed in at least one of the internal space and the slot to heat a substrate placed in the treatment chamber.

[0015] In addition, in the microwave heat treatment device according to the present invention, when the microwave generating unit is formed of a plurality of units and the waveguide is implemented as one unit, the waveguide is installed to penetrate the processing chamber, and at least one microwave generating unit is connected to each of one end and the other end of the waveguide.

[0016] In addition, in the microwave heat treatment device according to the present invention, when the microwave generating unit is formed of a plurality of units and the waveguide is implemented as one unit, the waveguide is installed to be bent and penetrate from one side of the processing chamber toward an adjacent side, and at least one microwave generating unit is connected to each of one end and the other end of the waveguide.

[0017] In addition, in the microwave heat treatment device according to the present invention, when the microwave generating unit is formed with a plurality of microwave generating units and the waveguides are implemented with a number equal to or smaller than the number of the microwave generating units, at least one waveguide is formed horizontally and the remaining waveguides are formed vertically.

[0018] In addition, in the microwave heat treatment device according to the present invention, when the microwave generating unit is formed of a plurality of units and the waveguides are implemented in a number equal to or smaller than the number of the microwave generating units, the waveguides are characterized in that they are arranged to face each other with the substrate interposed therebetween.

[0019] In addition, in the microwave heat treatment device according to the present invention, the waveguides arranged to face each other with the substrate interposed therebetween are characterized in that they are arranged to be parallel to each other and the center lines of the slots formed in each waveguide are parallel to each other.

[0020] In addition, in the microwave heat treatment device according to the present invention, the waveguides arranged to face each other with the substrate interposed therebetween are characterized in that they are arranged so that they are parallel to each other, the center lines of the slots formed in each waveguide are parallel to each other, and the positions of the slots are aligned with each other.

[0021] In addition, in the microwave heat treatment device according to the present invention, the waveguides arranged to face each other with the substrate interposed therebetween are characterized in that the center lines of the slots formed in each waveguide are not parallel to each other but are arranged to form an arbitrary angle.

[0022] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is characterized in that it is formed throughout the entire internal space of the waveguide.

[0023] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is characterized in that it is formed in a part of the internal space of the waveguide.

[0024] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is formed in a slot formed in the waveguide to form a dielectric rod, and the dielectric rod is formed to extend into the interior of the waveguide.

[0025] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is formed in a slot formed in the waveguide to form a dielectric rod, and the dielectric rod is formed to have a height equal to the thickness of the slot.

[0026] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is formed in a slot formed in the waveguide to form a dielectric rod, and the dielectric rod is formed to a height higher than the thickness of the slot.

[0027] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is formed in a slot formed in the waveguide to form a dielectric rod, and the dielectric rod is formed to a height lower than the thickness of the slot.

[0028] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is formed in a slot formed in the waveguide to form a dielectric rod, and each dielectric rod is formed with a different height.

[0029] In addition, in the microwave heat treatment device according to the present invention, the dielectric material is formed in a slot formed in the waveguide to form a dielectric rod, and the cross-sectional shape of the dielectric rod protruding out of the slot is characterized by being formed in any one of a square, a semicircle, a semi-ellipse, a triangle, and a trapezoid.

[0030] In addition, in the microwave heat treatment device according to the present invention, at least one slot formed on one side of the waveguide is characterized in that it is formed in any one of a circle, a square, a triangle, an oval, and a rectangle.

[0031] Additionally, in the microwave heat treatment device according to the present invention, the waveguide is characterized in that at least one slot is formed at equal intervals on one surface.

[0032] In addition, in the microwave heat treatment device according to the present invention, the waveguide is characterized in that at least one slot is formed at equal intervals on one surface to form at least one row.

[0033] In addition, in the microwave heat treatment device according to the present invention, the waveguide is characterized in that it is formed by arranging at least one waveguide in parallel, with at least one slot formed at equal intervals on one surface.

[0034] Specific details of other embodiments are included in the “Specific Details for Carrying Out the Invention” and the attached “Drawings.”

[0035] The advantages and / or features of the present invention and the methods for achieving them will become clear with reference to the various embodiments described in detail below together with the accompanying drawings.

[0036] However, the present invention is not limited to the configuration of each embodiment disclosed below, but may be implemented in various different forms, and each embodiment disclosed in this specification is provided only to ensure that the disclosure of the present invention is complete and to fully inform a person having ordinary skill in the art to which the present invention pertains of the scope of the present invention, and it should be understood that the present invention is defined only by the scope of each claim of the claims.

[0037] According to the present invention, a dielectric material is formed inside a waveguide, and microwaves are transmitted into a processing chamber through the dielectric material, thereby forming slots at close intervals on one side of the waveguide, thereby enabling uniform heating of the substrate.

[0038] Figures 1 to 3 are schematic drawings showing the configuration of a microwave heat treatment device according to one embodiment of the present invention.

[0039] Figures 4 to 9 are drawings showing exemplary arrangements of waveguides applied to the present invention.

[0040] FIG. 10 is a drawing exemplifying a dielectric material formed in the internal space and slot of a waveguide according to the present invention.

[0041] FIG. 11 is a drawing exemplarily showing the height of a dielectric load formed in a slot of a waveguide according to the present invention.

[0042] FIG. 12 is a drawing showing an example of a cross-section of a dielectric rod formed in a slot of a waveguide according to the present invention.

[0043] Fig. 13 is a drawing exemplarily showing the shape of a slot formed in a waveguide according to the present invention.

[0044] FIG. 14 and FIG. 15 are drawings showing an example of the arrangement of slots formed in a waveguide according to the present invention.

[0045] Fig. 16 is a drawing showing an example of a waveguide applied to the present invention.

[0046] Figure 17 is a drawing showing an example of a waveguide and a substrate support applied to the present invention.

[0047] Fig. 18 is a drawing showing an example of the spacing of slots formed in a waveguide according to a conventional technique.

[0048] FIG. 19 is a drawing exemplarily showing the spacing of slots formed in a waveguide according to the present invention.

[0049] Before describing the present invention in detail, it should be understood that the terms or words used in this specification should not be interpreted as being unconditionally limited to their usual or dictionary meanings, and that the inventor of the present invention may appropriately define and use the concepts of various terms in order to explain his or her invention in the best possible manner, and further, that these terms or words should be interpreted as meanings and concepts that are consistent with the technical idea of ​​the present invention.

[0050] That is, it should be noted that the terms used in this specification are only used to describe preferred embodiments of the present invention, and are not intended to specifically limit the contents of the present invention, and that these terms are defined in consideration of various possibilities of the present invention.

[0051] Additionally, in this specification, it should be noted that singular expressions may include plural expressions unless the context clearly indicates a different meaning, and similarly, even if expressed in plural, may include a singular meaning.

[0052] Throughout this specification, whenever a component is described as "including" another component, it may mean that the component may further include any other component, rather than excluding any other component, unless specifically stated otherwise.

[0053] Furthermore, when it is described that a component is "located within, connected to, or installed within" another component, it should be understood that the component may be installed in direct connection with or in contact with the other component, may be installed spaced apart from the other component by a certain distance, and if it is installed spaced apart from the other component by a certain distance, there may be a third component or means for fixing or connecting the component to the other component, and the description of this third component or means may be omitted.

[0054] On the other hand, if a component is described as being "directly connected" or "directly connected" to another component, it should be understood that no third component or means exists.

[0055] Likewise, other expressions that describe the relationship between components, such as "between" and "directly between", or "adjacent to" and "directly adjacent to", should be interpreted as having the same meaning.

[0056] In addition, it should be noted that the terms “one side,” “the other side,” “one side,” “the other side,” “first,” “second,” etc. in this specification, if used, are used to clearly distinguish one component from another component, and the meaning of the component is not limited by such terms.

[0057] In addition, terms related to position, such as “upper,” “lower,” “left,” and “right,” etc., in this specification, if used, should be understood to indicate relative positions of the corresponding components in the corresponding drawings, and unless absolute positions are specified for these positions, these position-related terms should not be understood to refer to absolute positions.

[0058] Moreover, in the specification of the present invention, it should be noted that the terms “part”, “device”, “module”, “device”, etc., if used, mean a unit capable of processing one or more functions or operations, which may be implemented by hardware or software, or a combination of hardware and software.

[0059] In addition, in this specification, when specifying the drawing numbers for each component of each drawing, the same component has the same drawing number even if the component is shown in a different drawing, that is, the same reference number indicates the same component throughout the specification.

[0060] In the drawings attached to this specification, the size, position, connection relationship, etc. of each component constituting the present invention may be described with some exaggeration, reduction, or omission in order to sufficiently clearly convey the idea of ​​the present invention or for convenience of explanation, and therefore the proportions or scales may not be strict.

[0061] In addition, in the following description of the present invention, a detailed description of a configuration that is judged to unnecessarily obscure the gist of the present invention, for example, a known technology including a prior art, may be omitted.

[0062]

[0063] Hereinafter, a microwave heat treatment device according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0064] FIG. 1 is a schematic diagram showing the configuration of a microwave heat treatment device according to one embodiment of the present invention.

[0065] As shown in FIG. 1, a microwave heat treatment device (100) according to one embodiment of the present invention may include a treatment chamber (110), a vacuum pump (120), a microwave generation unit (130), a temperature measurement unit (140), a waveguide (150), etc.

[0066] The processing chamber (110) has a certain space inside and may have a structure capable of maintaining the internal space in a vacuum state.

[0067] Accordingly, the processing chamber (110) may be equipped with a vacuum pump (120) capable of discharging gas inside the chamber, and may also be equipped with a venting device capable of injecting gas into the chamber.

[0068] The microwave generator (130) can be installed outside the processing chamber (110) and can be driven under the control of a control unit (not shown) to generate microwaves.

[0069] In an embodiment of the present invention, the microwave generator (130) may be implemented as a magnetron, but is not limited thereto.

[0070] The temperature measuring unit (140) can measure the temperature of the semiconductor substrate (10) that is the target of heat treatment and provide the measured value to the control unit (not shown).

[0071] The waveguide (150) is connected to a microwave generator (130) at one end and can be inserted into the processing chamber (110) at the other end.

[0072] The waveguide (150) may have at least one slot (155) formed on one side (e.g., the upper or lower surface of the waveguide) of the portion inserted inside the processing chamber (110).

[0073] The waveguide (150) can transmit microwaves generated by the microwave generator (130) into the processing chamber (110) to heat the substrate (10) placed in the processing chamber (110).

[0074] The waveguide (150) can have a dielectric material (160) formed in at least one of the internal space and the slot (155), and can transmit microwaves generated by the microwave generator (130) into the processing chamber (110) through the formed dielectric material (160) to heat the substrate (10) placed in the processing chamber (110).

[0075] The waveguide (150) may be configured to be installed on the lower surface of the processing chamber (110) as shown in FIG. 1 so that a substrate (10) is placed on the upper surface of the waveguide (150), may be configured to be installed on the upper surface inside the processing chamber (110) so as to irradiate microwaves to the substrate (10) placed on the lower surface of the processing chamber (110), and may be configured to be installed on the side surface inside the processing chamber (110) so as to irradiate microwaves to the substrate (10) placed on the lower surface of the processing chamber (110).

[0076] When the waveguide (150) is installed on the lower surface of the processing chamber (110) and the substrate (10) is arranged on the upper surface of the waveguide (150), as shown in FIG. 2, a spacer (170) may be provided on the upper surface of the waveguide (150) to space the waveguide (150) and the substrate (10) apart from each other and to adjust the gap between the substrate (10) and the slot (155) formed on the upper surface of the waveguide (150) (or the dielectric load (165) formed in the slot (155)).

[0077] In addition, when the waveguide (150) is installed on the lower surface of the processing chamber (110) and the substrate (10) is arranged on the upper surface of the waveguide (150), as shown in FIG. 3, a substrate support (180) that supports the substrate (10) and a substrate support drive unit (185) that can adjust the gap between the substrate (10) and the slot (155) formed on the upper surface of the waveguide (150) by raising or lowering the substrate support (180) may be provided inside the processing chamber (110).

[0078] Meanwhile, in the embodiment of the present invention, the microwave generating unit (130) may be formed in multiple units, and each microwave generating unit (130) may generate microwaves having the same wavelength (frequency) or may generate microwaves having different wavelengths (frequencies).

[0079] As described above, when the microwave generator (130) is composed of multiple units, the waveguide (150) can be implemented as one waveguide, can be implemented as the same number of waveguides as the microwave generator (130), or can be implemented as a smaller number of waveguides than the number of microwave generators (130).

[0080] In the case where the microwave generator (130) is composed of multiple units and the waveguide (150) is composed of a single waveguide, as shown in FIG. 4, the waveguide (150) may be configured to be installed so as to penetrate the opposing sides of the processing chamber (110), and at least one microwave generator (130) may be connected to each of one end and the other end of the waveguide (150).

[0081] For example, if two microwave generators (130) are implemented, one microwave generator (130) can be connected to each end of the waveguide (150), and if three microwave generators (130) are implemented, one microwave generator (130) can be connected to one end of the waveguide (150) and two microwave generators (130) can be connected to the other end.

[0082] In addition, when the microwave generating unit (130) is composed of a plurality of units and the waveguide (150) is composed of a single waveguide, as shown in FIG. 5, the waveguide (150) may be configured to be bent and penetrate from one side of the processing chamber (110) toward the adjacent side, and at least one microwave generating unit (130) may be connected to each of one end and the other end of the waveguide (150).

[0083] In addition, when the microwave generator (130) is formed in multiple units and the waveguide (150) is implemented in a number equal to or smaller than the number of microwave generators (130), as shown in FIG. 6, at least one waveguide (150) may be formed horizontally on the lower surface of the processing chamber (110), and the remaining waveguides (150) may be formed vertically on the side surface of the processing chamber (110).

[0084] In addition, when the microwave generator (130) is formed in multiple units and the waveguide (150) is implemented in a number equal to or smaller than the number of microwave generators (130), as shown in FIG. 7, at least one waveguide is formed horizontally on the lower surface of the processing chamber (110), and the remaining waveguides are formed horizontally on the upper surface of the processing chamber (110), but can be formed to face each other with the waveguides formed on the lower surface of the processing chamber (110) with the substrate (10) interposed therebetween.

[0085] At this time, the waveguides (150) installed to face each other with the substrate (10) in between can be installed so that they are parallel to each other, the center lines of the slots formed in each waveguide (150) are parallel to each other, and the positions of the slots (155) match each other, as shown in FIG. 7.

[0086] In addition, waveguides (150) installed to face each other with the substrate (10) in between can be installed so that they are parallel to each other as shown in FIG. 8, the center lines of the slots formed in each waveguide (150) are parallel to each other, and the positions of the slots (155) do not match each other.

[0087] In addition, the waveguides (150) installed to face each other with the substrate (10) in between can be installed so that the center lines of the slots formed in each waveguide (150) are not parallel to each other but form an arbitrary angle (θ), as shown in FIG. 9.

[0088] Meanwhile, as described above, a dielectric material (160) may be formed in at least one of the internal space of the waveguide (150) and the slot (155) formed in the waveguide (150).

[0089] In an embodiment of the present invention, the dielectric material (160) may be implemented as quartz, but is not limited thereto.

[0090] Here, the dielectric material (160) formed in the internal space of the waveguide (150) can be formed throughout the internal space of the waveguide as shown in (a) of FIG. 10.

[0091] In addition, the dielectric material (160) formed in the internal space of the waveguide (150) may be formed only in a part of the internal space of the waveguide, as shown in (b), (c), (g), and (h) of FIG. 10.

[0092] Additionally, the dielectric material (160) can be formed in a slot (155) formed in the waveguide (150) to form a dielectric load (165).

[0093] The dielectric material (160) may be formed in both the internal space of the waveguide (150) and the slot (155), as shown in (a) to (c) of FIG. 10, and may be formed only in the slot (155) and not inside the waveguide (150), as shown in (d) of FIG. 10, and may be formed only in the slot (155) and not inside the waveguide (150), as shown in (e) and (f) of FIG. 10, but may be implemented such that the dielectric rod (165) formed in the slot (155) extends into the inside of the waveguide (150), and may be implemented such that the dielectric rod (165) formed in the slot (155) extends into the inside of the waveguide (150), as shown in (g) and (h) of FIG. 10, and may be formed in a part of the internal space of the waveguide and the slot (155), but may be implemented such that the dielectric rod (165) formed in the slot (155) extends into the inside of the waveguide (150), and is limited thereto. It is not.

[0094] As described above, the dielectric load (165) formed in the slot (155) may be formed with the same height as the thickness of the slot (155), as shown in (a) of FIG. 11, may be formed with a height higher than the thickness of the slot (155), as shown in (b) of FIG. 11, may be formed with a height lower than the thickness of the slot (155), as shown in (c) of FIG. 11, and may be formed with different heights, as shown in (d) of FIG. 11, but is not limited thereto.

[0095] As described above, the dielectric rod (165) formed in the slot (155) can be formed to a height higher than the thickness of the slot (155), as shown in (b) of FIG. 11, and the cross-sectional shape of the dielectric rod (165) protruding out of the slot (155) can be formed as any one of a square, a semicircle, a semi-ellipse, a triangle, a spherical groove, and a trapezoidal shape, as shown in FIG. 12, but is not limited thereto.

[0096] Meanwhile, the waveguide (150) may have at least one slot (155) formed on one side of the portion inserted into the processing chamber (110) as described above, and may be formed in any one of a circle, square, triangle, oval, and rectangle as shown in FIG. 13, but is not limited thereto.

[0097] The slot (155) formed on one side of the waveguide (150) may be formed such that at least one slot (155) having the same shape is spaced apart at a predetermined interval, as shown in (a), (b), and (e) of FIG. 14, one slot (155) may be formed, as shown in (c) of FIG. 14, slots (155) having different shapes are spaced apart at a predetermined interval, as shown in (d) of FIG. 14, but the size of the slot (155) may be formed to increase as they move away from the part where the center of the substrate (10) is located, and at least one slot (155) having the same shape may be spaced apart at different intervals, as shown in (f) of FIG. 14, and at least one slot (155) having the same shape is spaced apart at different intervals symmetrically, as shown in (g) of FIG. 14, but at least one slot (155) having the same shape is spaced apart at different intervals symmetrically, as they move away from the part where the center of the substrate (10) is located. It can be formed so that the spacing between them becomes narrower as they get farther away, but is not limited to this.

[0098] Here, the slot (155) formed on one side of the waveguide (150) may be formed only in a portion corresponding to the position where the substrate (10) is placed in the portion inserted inside the processing chamber (110), or may be formed in the entire portion inserted inside the processing chamber (110), but is not limited thereto.

[0099] In the embodiment of the present invention, the waveguide (150) may have at least one slot (155) formed at equal intervals on one surface as described above, and as illustrated in FIG. 15, at least one slot (155) may be formed at equal intervals on one surface of the waveguide (150) to form at least one row. At this time, the position of the slot (155) forming the row may be formed to be in a straight line with the slot (155) of the neighboring row as illustrated in (b) to (d), and may be formed to be misaligned with the slot (155) of the neighboring row as illustrated in (e).

[0100] In an embodiment of the present invention, the waveguide (150) can be formed by arranging at least one waveguide in which a row of slots (155) is formed in parallel, as shown in FIG. 16.

[0101] In an embodiment of the present invention, when the waveguide (150) is placed on the lower surface of the processing chamber (110), the substrate (10) may be placed directly on the upper surface of the waveguide (150) as shown in FIGS. 1, 4, and 5, or may be placed on the upper surface of a spacer (170) installed on the upper surface of the waveguide (150) as shown in FIG. 2.

[0102] In addition, as shown in FIG. 3, it may be placed on top of a substrate support (180) installed in a processing chamber (110), or as shown in FIGS. 7 to 9, it may be placed on top of a substrate support (190) installed on the upper surface of a waveguide (150).

[0103] The aforementioned substrate support (190) is installed on the upper surface of the waveguide (150) and supports the substrate (10) to be heat treated, which is placed on the upper surface.

[0104] In addition, the substrate support (190) may be implemented to separate the waveguide (150) and the substrate (10), while being able to adjust the gap between the substrate (10) and the slot (155) formed on the upper surface of the waveguide (150) (or the dielectric load (165) formed in the slot (155)).

[0105] As shown in FIG. 17, at least one slot (175) may be formed at regular intervals on the substrate support (190), and a dielectric material (160) may be formed in each slot (175).

[0106] As described above, in the embodiment of the present invention, a dielectric material (160) may be formed in at least one of the internal space and slot (155) of the waveguide (150).

[0107] As described above, when a dielectric material (160) is formed in at least one of the internal space and slot (155) of the waveguide (150), the microwave generated by the microwave generator (130) is transmitted through the dielectric material (160) formed in at least one of the internal space and slot (155) of the waveguide (150).

[0108] When microwaves pass through a dielectric material (160), the wavelength of the microwaves decreases due to the dielectric constant of the dielectric material.

[0109] In this way, when the wavelength of the microwave is reduced, it becomes easier for the microwave to escape through the slot (155) formed on one side of the waveguide (150), and the slots (155) can be formed more densely on one side of the waveguide (150), thereby enabling the substrate (10) to be heated more uniformly.

[0110] In general, the position of the slot (155) formed on one side of the waveguide (150) where the dielectric material (160) is not formed is formed at the λ / 4 position of the wavelength supplied into the interior of the waveguide (150), as shown in FIG. 18.

[0111] On the other hand, when a dielectric material (160) is formed in the internal space of the waveguide (150), the wavelength of the microwave supplied from the microwave generator (130) is reduced within the dielectric material as shown in FIG. 19 due to the dielectric constant of the dielectric material, and the position of the slot (155) is determined as λ / 4 of the reduced wavelength, so that the spacing of the slots (155) formed on one surface of the waveguide (150) is formed more closely.

[0112] When the slots (155) are formed at close intervals, the substrate (10) can be heated uniformly when heating the substrate using microwaves.

[0113] That is, when the slots (155) are formed at a close interval, more interference sections of microwaves reaching the substrate (10) can be formed, thereby inducing a uniform temperature rise within the substrate (10).

[0114] At this time, the interference section of the microwave can be formed by adjusting the spacing between the slots (155) formed on one side of the substrate (10) and the waveguide (150) (or the dielectric load (165) formed in the slots (155), the spacing between the slots (155), the frequency, etc.

[0115] Above, although some examples have been given and various preferred embodiments of the present invention have been described, the description of the various embodiments described in the “Specific Details for Carrying Out the Invention” section is merely exemplary, and those skilled in the art to which the present invention pertains will readily understand that they can carry out various modifications of the present invention or carry out equivalent implementations of the present invention based on the above description.

[0116] In addition, since the present invention can be implemented in various other forms, the present invention is not limited by the above description, and the above description is provided only to make the disclosure of the present invention complete and to fully inform a person having ordinary skill in the art to which the present invention belongs of the scope of the present invention, and it should be understood that the present invention is defined only by each claim of the claims.

[0117] [Explanation of symbols]

[0118] 110. Processing chamber,

[0119] 120. Vacuum pump,

[0120] 130. Microwave generator,

[0121] 140. Temperature measuring unit,

[0122] 150. Waveguide,

[0123] 155, 175. Slot

[0124] 160. Genetic material,

[0125] 165. Genomic load,

[0126] 170. Spacer,

[0127] 180, 190. Substrate support,

[0128] 185. Substrate support drive unit

Claims

1. A processing chamber having a certain space inside; A microwave generating unit installed outside the above processing chamber to generate microwaves; and A waveguide characterized in that it comprises a first end connected to the microwave generator, the other end inserted into the processing chamber, at least one slot formed on one side of the portion inserted into the processing chamber, and a dielectric material formed in at least one of the internal space and the slot to transmit microwaves generated by the microwave generator into the processing chamber to heat a substrate placed in the processing chamber. Microwave heat treatment device.

2. In paragraph 1, If the above microwave generator is composed of multiple units and the waveguide is implemented as one unit, The above waveguide is installed to penetrate the above processing chamber, Characterized in that at least one microwave generating unit is connected to each of one end and the other end of the waveguide. Microwave heat treatment device.

3. In paragraph 1, If the above microwave generator is composed of multiple units and the waveguide is implemented as one unit, The above waveguide is installed so as to be bent and penetrate from one side of the processing chamber toward the adjacent side, Characterized in that at least one microwave generating unit is connected to each of one end and the other end of the waveguide. Microwave heat treatment device.

4. In paragraph 1, When the above microwave generating unit is composed of multiple units and the waveguide is implemented with the same number of microwave generating units or a number smaller than the number of microwave generating units, At least one waveguide is formed transversely, The remaining waveguides are characterized by being formed vertically. Microwave heat treatment device.

5. In paragraph 1, When the above microwave generating unit is composed of multiple units and the waveguide is implemented with the same number of microwave generating units or a number smaller than the number of microwave generating units, The above waveguides are characterized in that they are arranged to face each other with the substrate interposed between them. Microwave heat treatment device.

6. In paragraph 5, The waveguides are arranged to face each other with the above substrate in between, characterized in that the slots formed in each waveguide are arranged parallel to each other and the center lines of the slots formed in each waveguide are parallel to each other. Microwave heat treatment device.

7. In paragraph 5, The waveguides are arranged to face each other with the above substrate in between, Characterized in that the slots are arranged so that they are parallel to each other, the center lines of the slots formed in each waveguide are parallel to each other, and the positions of the slots are aligned with each other. Microwave heat treatment device.

8. In paragraph 5, The waveguides are arranged to face each other with the above substrate in between, Characterized in that the center lines of the slots formed in each waveguide are not parallel to each other and are arranged to form an arbitrary angle. Microwave heat treatment device.

9. In paragraph 1, The above genetic material is, Characterized in that it is formed throughout the entire internal space of the waveguide, Microwave heat treatment device.

10. In paragraph 1, The above genetic material is, Characterized in that it is formed in a part of the internal space of the waveguide, Microwave heat treatment device.

11. In paragraph 1, The above genetic material is, It is formed in a slot formed in the above waveguide to form a dielectric load, The above dielectric load is characterized in that it extends into the interior of the waveguide. Microwave heat treatment device.

12. In paragraph 1, The above genetic material is, It is formed in a slot formed in the above waveguide to form a dielectric load, The above dielectric load is characterized in that it is formed with a height equal to the thickness of the slot. Microwave heat treatment device.

13. In paragraph 1, The above genetic material is, It is formed in a slot formed in the above waveguide to form a dielectric load, The above dielectric load is characterized in that it is formed to a height higher than the thickness of the slot. Microwave heat treatment device.

14. In paragraph 1, The above genetic material is, It is formed in a slot formed in the above waveguide to form a dielectric load, The above dielectric load is characterized in that it is formed with a height lower than the thickness of the slot. Microwave heat treatment device.

15. In paragraph 1, The above genetic material is, It is formed in a slot formed in the above waveguide to form a dielectric load, Each genetic load is characterized by being formed at a different height. Microwave heat treatment device.

16. In paragraph 1, The above genetic material is, It is formed in a slot formed in the above waveguide to form a dielectric load, The cross-sectional shape of the dielectric rod protruding out of the slot is characterized by being formed in any one of a square, a semicircle, a semi-ellipse, a triangle, and a trapezoid. Microwave heat treatment device.

17. In paragraph 1, At least one slot formed on one side of the waveguide, Characterized by being formed into one of a circle, square, triangle, oval, and rectangle. Microwave heat treatment device.

18. In paragraph 1, The above waveguide, characterized in that at least one slot is formed at equal intervals on one side, Microwave heat treatment device.

19. In paragraph 18, The above waveguide, Characterized in that at least one slot is formed at equal intervals on one side to form at least one row. Microwave heat treatment device.

20. In paragraph 1, The above waveguide, Characterized in that it is formed by arranging at least one waveguide in parallel, with at least one slot formed at equal intervals on one side. Microwave heat treatment device.

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