Semiconductor laser device, light source module, and method for manufacturing light source module

Abstract

A semiconductor laser device (1) comprises: a semiconductor laser element (200) that emits laser light; and a lens unit (100) that has a cylindrical lens (110) and an installation surface, wherein the semiconductor laser element (200) has an active layer, the cylindrical lens (110) accepts incident laser light and changes the spread angle of the laser light in the fast-axis direction, the installation surface is fixed to an installation-bearing surface, the generatrix (115) of the cylindrical lens (110) is inclined with respect to a first reference plane of the installation-bearing surface, and the angle α between the generatrix (115) and the first reference plane satisfies 0° < |α| < 45°.

Description

Semiconductor laser device, light source module, and method of manufacturing the light source module

[0001] The present disclosure relates to a semiconductor laser device, a light source module, and a method for manufacturing a light source module.

[0002] Japanese Patent Application Laid-Open No. 2003-144222 discloses a semiconductor laser device including a semiconductor laser element and a collimator lens that collimates laser light emitted from the semiconductor laser element in the fast axis direction.

[0003] JP 2014-170888 A

[0004] However, in the semiconductor laser device disclosed in Patent Document 1, the positioning accuracy of the collimator lens in the fast axis direction of the semiconductor laser device is low. Therefore, when a light source module includes multiple semiconductor laser devices, the positional misalignment between the laser light and an object, such as an optical fiber, becomes large, resulting in many semiconductor laser devices with low coupling efficiency between the laser light and the object. If many semiconductor laser devices with low coupling efficiency between the laser light and the object occur, the coupling efficiency of the light source module will decrease.

[0005] Therefore, an object of the present disclosure is to easily increase the coupling efficiency of a light source module.

[0006] In order to achieve the above object, a semiconductor laser device according to one aspect of the present disclosure includes a semiconductor laser element that emits laser light, and a lens unit that has a cylindrical lens and an installation surface, wherein the semiconductor laser element has an active layer, the cylindrical lens receives the laser light and changes a divergence angle of the laser light in a fast axis direction, the installation surface is fixed to a surface on which the laser light is to be installed, a generatrix of the cylindrical lens is inclined with respect to a first reference plane that the surface on which the laser light is to be installed has, and an angle α between the generatrix and the first reference plane satisfies 0°<|α|<45°.

[0007] Moreover, a semiconductor laser device according to one aspect of the present disclosure includes a semiconductor laser element that emits laser light, and a lens unit having a cylindrical lens and an installation surface, wherein the semiconductor laser element has an active layer, the cylindrical lens receives the laser light and changes a divergence angle of the laser light in a fast axis direction, the installation surface is fixed to a surface on which the laser light is to be installed, a generatrix of the cylindrical lens is inclined with respect to a second reference plane of the installation surface, and an angle β between the generatrix and the second reference plane satisfies 0°<|β|<45°.

[0008] a cylindrical lens that receives the laser light and changes a divergence angle of the laser light in a fast axis direction; the cylindrical lens is fixed to a mounting surface; the mounting surface is a part of a first cylindrical surface; the mounting surface is a part of a second cylindrical surface that fits into the first cylindrical surface; when viewed from the emission direction of the laser light, a tangent to the mounting surface that intersects with a virtual line that passes through the light-emitting region and is perpendicular to the active layer is inclined with respect to the active layer; and an angle γ between the active layer and the tangent satisfies 0°<|γ|<45°.

[0009] Furthermore, a semiconductor laser device according to one aspect of the present disclosure includes a semiconductor laser element that emits laser light, and a lens portion having a cylindrical lens and an installation side, wherein the semiconductor laser element has an active layer, the cylindrical lens receives the laser light and changes a divergence angle of the laser light in a fast axis direction, the installation side is fixed to a surface on which the laser light is to be installed, a generatrix of the cylindrical lens is inclined with respect to a first reference plane that the surface on which the laser light is to be installed has, and an angle α between the generatrix and the first reference plane satisfies 0°<|α|<45°.

[0010] Furthermore, a light source module according to one aspect of the present disclosure includes a plurality of the semiconductor laser devices described above, and the laser light emitted from the semiconductor laser elements included in each of the plurality of semiconductor laser devices is combined.

[0011] Furthermore, a manufacturing method of a light source module according to one aspect of the present disclosure is a manufacturing method of a light source module, the light source module including a semiconductor laser element that emits laser light, an installation surface, and a lens unit having a cylindrical lens and an installation surface, the semiconductor laser element having an active layer, the cylindrical lens changing a divergence angle of the laser light in a fast axis direction, the installation surface being fixed to the installation surface, the manufacturing method including: an arrangement step of arranging the lens unit on the installation surface so that a generatrix of the cylindrical lens is inclined with respect to a first reference plane of the installation surface; an alignment step of making the laser light emitted from the semiconductor laser element incident on the cylindrical lens and moving the arranged lens unit in two directions parallel to the first reference plane and perpendicular to each other; and a fixing step of fixing the moved lens unit to the installation surface, wherein in the arrangement step, an angle α formed by the generatrix and the first reference plane satisfies 0°<|α|< 45°.

[0012] According to the present disclosure, the coupling efficiency of the light source module can be easily increased.

[0013] FIG. 1 is a perspective view showing the overall configuration of a light source module according to a first embodiment. FIG. 2 is a perspective view showing the configuration of a semiconductor laser device according to the first embodiment. FIG. 3 is a front view showing the configuration of the semiconductor laser device according to the first embodiment. FIG. 4 is a cross-sectional view showing a cut surface of the semiconductor laser device taken along line IV-IV in FIG. 2. FIG. 5 is a perspective view showing a support member according to the first embodiment. FIG. 6 is a diagram for explaining a method for manufacturing the support member according to the first embodiment. FIG. 7 is a diagram for explaining a method for manufacturing the support member according to the first embodiment. FIG. 8 is a diagram for explaining a method for manufacturing the support member according to the first embodiment. FIG. 9 is a front view for explaining an alignment step according to the first embodiment. FIG. 10 is a front view for explaining an alignment step according to the first embodiment. FIG. 11 is a diagram showing the relationship between angles α and β and the movement amount (Δz) of the cylindrical lens in the z-axis direction and the movement amount (Δx) of the cylindrical lens in the x-axis direction according to the first embodiment. FIG. 12 is a front view showing an example before the lens portion moves in the tilt direction in the alignment step according to the first embodiment. FIG. 13 is a front view showing an example after the lens portion has moved in the tilt direction in the alignment step according to the first embodiment. FIG. 14 is a diagram showing the relationship between angles α and β, Δz, and Δx according to the first embodiment. FIG. 15 is a front view showing the configuration of a semiconductor laser device according to a first modification of the first embodiment. FIG. 16A is a front view showing the configuration of a semiconductor laser device according to a second modification of the first embodiment. FIG. 16B is a perspective view showing the configuration of a semiconductor laser device according to a third modification of the first embodiment. FIG. 16C is a cross-sectional view showing a cut surface of the semiconductor laser device taken along line XVIC-XVIC in FIG. 16B. FIG. 16D is a diagram for explaining a method for manufacturing a support member according to the third modification of the first embodiment. FIG. 16E is a diagram for explaining a method for manufacturing a lens portion according to the third modification of the first embodiment. FIG. 16F is a diagram for explaining a method for manufacturing a lens portion according to the third modification of the first embodiment. FIG. 16G is a diagram for explaining the arrangement of the lens portion on a fixed base according to the third modification of the first embodiment. FIG. 16H is a plan view of a semiconductor laser device according to a fourth modification of the first embodiment. FIG. 16I is a cross-sectional view showing a configuration of a semiconductor laser device according to Modification 5 of Embodiment 1.Fig. 17 is a front view showing the configuration of a semiconductor laser device according to embodiment 2. Fig. 18 is a front view showing an example after a lens portion has moved by rotation according to embodiment 2. Fig. 19 is a perspective view showing a support member according to another embodiment. Fig. 20 is a perspective view showing a first fixing member according to another embodiment.

[0014] Semiconductor laser devices according to embodiments of the present disclosure will be described in detail below with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, component arrangements and connection forms, steps, and step orders shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0015] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match. Furthermore, in each figure, substantially the same components are given the same reference numerals, and redundant explanations are omitted or simplified.

[0016] Furthermore, in this specification, terms indicating the relationship between elements, such as "equal," terms indicating the shape of elements, such as "flat" or "rectangular," and numerical ranges are not expressions that only express a strict meaning, but are expressions that mean a substantially equivalent range, for example, including a difference of about a few percent.

[0017] Furthermore, in this specification, the terms "above" and "below" do not refer to the upward direction (vertically upward) and downward direction (vertically downward) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. Furthermore, the terms "above" and "below" are applied not only to a case where two components are arranged with a gap between them and another component exists between the two components, but also to a case where two components are arranged closely together and the two components are in contact with each other.

[0018] The x-axis, y-axis, and z-axis represent the three axes of a three-dimensional Cartesian coordinate system relating to the semiconductor laser element included in the semiconductor laser device. The positive direction of the z-axis may be referred to as "upward," and the negative direction of the z-axis may be referred to as "downward." The upper surface may be referred to as "top surface," and the lower surface may be referred to as "bottom surface."

[0019] In each embodiment and each modified example, the direction of travel along the optical axis of the laser light immediately after being emitted from the semiconductor laser element (the emission direction of the laser light) is defined as the negative y-axis direction, the direction parallel to the fast axis of the laser light immediately after being emitted from the semiconductor laser element is defined as the z-axis direction, and the direction parallel to the slow axis of the laser light immediately after being emitted from the semiconductor laser element is defined as the x-axis direction.

[0020] In the embodiments described below, "top view" means that the semiconductor laser device is viewed from the positive side of the z-axis, and the view in this state is called a top view. "front view" means that the semiconductor laser device is viewed from the negative side of the y-axis, and the view in this state is called a front view. "side view" means that the semiconductor laser device is viewed from the positive or negative side of the x-axis, and the view in this state is called a side view.

[0021] First Embodiment [Configuration] First, the configuration of a light source module 10 according to a first embodiment will be described with reference to FIG.

[0022] FIG. 1 is a perspective view showing the overall configuration of a light source module 10 according to the present embodiment.

[0023] 1 , the light source module 10 includes a case 501, a plurality of semiconductor laser devices (here, semiconductor laser devices 1, 2, 3, 4, 5, and 6), a plurality of slow-axis collimator lenses (hereinafter referred to as SAC lenses 600), a plurality of reflecting mirrors 700, a condenser lens 800, an optical fiber 550, and a pair of lead pins 552. The optical fiber 550 has a core 550a that guides the laser light. The light source module 10 also includes a boot 551. The light source module 10 also includes a staircase base 510.

[0024] The light source module 10 is a module that can spatially combine laser beams emitted from a plurality of semiconductor laser devices using an optical system and emit the combined laser beams. The combined laser beams are incident on a core 550a, which is an object, within the light source module 10, and the laser beams propagate through an optical fiber 550 and are emitted from the light source module 10 to the outside. In other words, the incidence of the laser beams on the core 550a at this time is called combining. The light source module 10 may also be a module that can combine laser beams emitted from a plurality of semiconductor laser devices using an optical system and emit the combined laser beams. Note that in FIG. 1 and subsequent figures, it is assumed that the light intensity of the laser beams is 1 / (e ２ ) are indicated by dashed lines, which represent the spread of the laser light.

[0025] The case 501 has a base 502, a side wall 503, and a lid (not shown).

[0026] The sidewall 503 is disposed perpendicular to the base 502 of the case 501. The sidewall 503 surrounds a plurality of semiconductor laser devices and the like. A pair of lead pins 552 are inserted into the sidewall 503, electrically connecting the outside and the inside of the case 501. The sidewall 503 has a frame-like and rectangular shape in a plan view and is made of, for example, Cu, a Cu alloy, an Fe—Ni—Co alloy, or Al. The base 502 is made of, for example, Cu, a Cu alloy, Al, or a ceramic with high thermal conductivity (e.g., AlN or BeO). The lid is a member that covers the top of the case 501 and is made of, for example, an inorganic material such as a metal or ceramic material. The lid is rectangular in a plan view and covers the entire top surface of the sidewall 503.

[0027] The case 501 has a space for accommodating a plurality of semiconductor laser devices. The space for accommodating the plurality of semiconductor laser devices is hermetically sealed, and the case 501 corresponds to an airtight package for hermetically sealing the plurality of semiconductor laser devices.

[0028] A staircase base 510 having multiple staircase-like stages is provided within the case 501. In the present embodiment, the staircase base 510 having multiple staircase-like stages is provided, but this is not limiting, and a base that is not staircase-like may also be used. The multiple stages include a first stage 511, a second stage 512, a third stage 513, a fourth stage 514, a fifth stage 515, and a sixth stage 516. Each of the first to sixth stages 511 to 516 has a first step and a second step. For example, the first stage 511 has a first step 511a and a second step 511b. In each of the first to sixth stages 511 to 516, the second step is located on the positive side of the z-axis relative to the first step, i.e., is located higher. The z-axis position of each first stage is located on the positive side, and the z-axis position of each second stage is located on the positive side, in the order of the first stage 511, the second stage 512, the third stage 513, the fourth stage 514, the fifth stage 515, and the sixth stage 516. Each of the multiple first stages and each of the multiple second stages is a plane parallel to the xy plane.

[0029] In this embodiment, each of the multiple semiconductor laser devices is located on the second stage of each of the multiple stages. The multiple semiconductor laser devices are devices that convert power input to a pair of lead pins 552 and emit laser light. In this embodiment, six semiconductor laser devices are provided. For ease of identification, the six semiconductor laser devices may be referred to as semiconductor laser device 1, semiconductor laser device 2, semiconductor laser device 3, semiconductor laser device 4, semiconductor laser device 5, and semiconductor laser device 6. The multiple semiconductor laser devices are arranged side by side in the x-axis direction. Although the multiple semiconductor laser devices each have the same configuration, only semiconductor laser device 1 will be described here.

[0030] Fig. 2 is a perspective view showing the configuration of the semiconductor laser device 1 according to the present embodiment. Fig. 3 is a front view showing the configuration of the semiconductor laser device 1 according to the present embodiment.

[0031] The semiconductor laser device 1 includes a laser unit 20, a lens section 100, a fixed base 250, and a fixing member 300. The semiconductor laser device 1 is installed on the second stage 511b. The components of the semiconductor laser device 1 will be described below.

[0032] The fixed base 250 is a flat-plate-shaped mounting base on which the laser unit 20 and the like are mounted. The fixed base 250 has an upper surface 251 (second upper surface) which is the upper surface of the flat plate. The upper surface 251 in this embodiment is a plane parallel to the xy plane. The laser unit 20 and the fixing member 300 are fixed above the upper surface 251. The fixed base 250 is made of a material with high thermal conductivity, for example, a metal such as Cu, or a ceramic such as AlN or SiC.

[0033] The laser unit 20 includes a submount 230, a semiconductor laser element 200, and a bonding member 240. In this embodiment, the submount 230 includes a base material 236, a first electrode 210, and a second electrode 220.

[0034] The submount 230 is a flat-plate-shaped mounting base on which the semiconductor laser element 200 is mounted. The submount 230 has an upper surface 231 (first upper surface) that is the upper surface of the flat plate. The upper surface 231 in this embodiment is a plane parallel to the xy plane. A first electrode 210 and a second electrode 220 made of patterned metal layers are arranged on the upper surface 231 side of the submount 230 and are insulated from each other. In addition, a bonding member 240 is arranged above the first electrode 210. The semiconductor laser element 200 is installed above the upper surface 231, more specifically, above the bonding member 240.

[0035] The base material 236 of the submount 230 is made of, for example, an insulating material such as a crystal of AlN or SiC, or a ceramic. The submount 230 is placed above the upper surface 251 (second upper surface), that is, the base material 236 is attached to the upper surface 251 of the fixed base 250.

[0036] The first electrode 210 and the second electrode 220 are made of one or more metal films of metals such as Ni, Cu, Pt, and Au, etc. The bonding member 240 is made of an inorganic material such as a solder material such as AuSn or SnAgCu, etc.

[0037] The first electrode 210 is electrically connected to the semiconductor laser element 200 by a metal wire (not shown).

[0038] The first electrode 210 and the second electrode 220 are electrically connected to the lead pins 552 and supply power to the semiconductor laser device 200 .

[0039] The semiconductor laser device 200 is a laser device including a semiconductor laminated film and an optical waveguide formed on a semiconductor substrate. The semiconductor laminated film includes an active layer, that is, the semiconductor laser device 200 includes an active layer.

[0040] The semiconductor laser element 200 has a rectangular shape elongated in the waveguiding direction of the optical waveguide. The width (width in the x-axis direction) of the semiconductor laser element 200 is, for example, 100 μm or more and 1 mm or less, and the length (length in the y-axis direction) is, for example, 500 μm or more and 10 mm or less. The width (width in the x-axis direction) of the optical waveguide is, for example, 5 μm or more and 500 μm or less, and the semiconductor laser element 200 is, for example, a multi-transverse mode laser. The length (length in the y-axis direction) of the optical waveguide is the same value as the length of the semiconductor laser element 200. As shown in FIG. 3 , the region of the active layer included in the semiconductor laser element 200 that emits the laser light L1 is the light-emitting region 201. The size of the light-emitting region 201 is such that the width in the stacking direction of the semiconductor laminated film is the same value as the thickness of the active layer, and the width in the direction parallel to the stacking plane of the semiconductor laminated film is the same value as the width of the optical waveguide.

[0041] The semiconductor laser element 200 emits laser light L1 having a predetermined wavelength and a predetermined divergence angle. More specifically, the semiconductor laser element 200 converts electric power input from the outside to an optical waveguide into stimulated emission light such as laser light L1 and emits the light from a light-emitting region 201, which is one end of the optical waveguide. In this case, the fast axis of the laser light L1 is an axis parallel to the stacking direction of the semiconductor laminated film of the semiconductor laser element 200. Furthermore, the slow axis, which is perpendicular to the fast axis, is an axis parallel to the stacking plane of the semiconductor laminated film.

[0042] The semiconductor laser element 200 can change the wavelength of the emitted laser light L1 depending on the semiconductor material of the semiconductor laser element 200. For example, by using a nitride-based semiconductor laser element containing nitrides of Al, Ga, and In as its main components, the semiconductor laser element 200 can emit laser light L1 having a peak wavelength of, for example, 350 nm or more and 550 nm or less. Furthermore, by using a semiconductor laser element 200 containing semiconductors mainly composed of Al, Ga, In, As, and P as its main components, the semiconductor laser element 200 can emit laser light L1 having a peak wavelength of, for example, 600 nm or more and 1600 nm or less. Note that the semiconductor laser element 200 is not limited to semiconductor laser elements made of the above-mentioned semiconductor materials, and the wavelength of the laser light L1 emitted by the semiconductor laser element 200 is not limited to the above-mentioned wavelengths.

[0043] The laser light L1 is emitted while spreading from the light emitting region 201. The spreading angle of the emitted laser light L1 is defined as 1 / (e ２ ), the spread angle in the fast axis direction is, for example, 30° to 70°, and the spread angle in the slow axis direction is, for example, 3° to 25°.

[0044] In this embodiment, the optical waveguide of the semiconductor laser element 200 is disposed on the submount 230 side. That is, the semiconductor laser element 200 is fixed by so-called junction-down mounting. The active layer of the semiconductor laser element 200 is disposed so as to be parallel to the upper surface 231 of the submount 230. That is, the active layer is parallel to the surface of the semiconductor laser element 200 facing the submount 230. The submount 230 and the semiconductor laser element 200 are disposed so that the thickness of the bonding member 240 between the submount 230 and the semiconductor laser element 200 is uniform.

[0045] Therefore, the active layer is a layer parallel to the xy plane, and the fast axis of the laser light L1 immediately after being emitted from the semiconductor laser device 200 is the z-axis direction, and the slow axis of the laser light L1 is an axis parallel to the x-axis direction.

[0046] The lens unit 100 is a member having a cylindrical lens 110 and a support member 120. The lens unit 100 also has an installation surface, which is provided on the support member 120.

[0047] First, the cylindrical lens 110 will be described with reference to FIG.

[0048] Fig. 4 is a cross-sectional view showing a cut surface of the semiconductor laser device 1 taken along line IV-IV in Fig. 2. For simplicity, Fig. 4 shows only the semiconductor laser element 200, the submount 230, and the cylindrical lens 110. In Fig. 4, the optical axis A1 of the laser light L1 is indicated by a dashed line.

[0049] The cylindrical lens 110 receives the laser light L1 emitted from the semiconductor laser element 200 and changes the divergence angle of the laser light L1 in the fast axis direction. More specifically, the cylindrical lens 110 emits the laser light L1 with a small divergence angle in the fast axis direction. The divergence angle in the fast axis direction of the laser light L1 emitted from the cylindrical lens 110 is, for example, between -1° and +1°. An angle with a negative sign indicates focusing. In this embodiment, the laser light L1 emitted from the semiconductor laser element 200 is directly incident on the cylindrical lens 110. The cylindrical lens 110 is a lens that quasi-collimates the laser light L1 in the fast axis direction.

[0050] The cylindrical lens 110 is an optical component having a power axis having power (refractive power) and a non-power axis. The power axis and the non-power axis are arranged perpendicular to each other. That is, the cylindrical lens 110 has a cylindrical surface. The cylindrical lens 110 has a cylindrical surface that is convexly curved toward the power axis, i.e., the surface of a convex cylinder. The cylindrical lens 110 is a convex cylindrical lens. That is, the cylindrical lens 110 is a convex lens. The power axis is parallel to the fast axis of the laser light L1.

[0051] The cylindrical lens 110 has an incident surface 117 onto which the laser light L1 is incident and an exit surface 116 from which the laser light L1 is emitted. In this embodiment, the cylindrical lens 110 is a plano-convex cylindrical lens in which the incident surface 117 is flat and the exit surface 116 is convex. The incident surface 117 is a surface parallel to the zx plane. The exit surface 116 is a cylindrical surface, and is a convex surface whose curved surface is expressed by a spherical function or an aspherical function. The power axis is an axis parallel to the zx plane and inclined with respect to the z axis. In this embodiment, a plano-convex cylindrical lens is used as the cylindrical lens 110. However, a biconvex cylindrical lens, such as a convex meniscus cylindrical lens having one convex side and the other concave side, may also be used.

[0052] The cylindrical lens 110 is a member made of an inorganic transparent material such as glass, and an anti-reflection coating film that matches the wavelength of the laser light L1 is formed on an incident surface 117 and an exit surface 116 of the laser light L1.

[0053] Furthermore, the generatrix 115 of the cylindrical lens 110 will be described.

[0054] The cylindrical lens 110 is a cylindrical lens having a cylindrical surface. The cylindrical surface has a generatrix 115, which is illustrated by a dashed line in Figure 3 and other figures. The light exit surface 116 of the cylindrical lens 110 is a convex cylindrical surface. Generally, a generatrix is ​​a straight line at each position when the cylindrical surface (curved surface) of the cylindrical surface is created by moving a straight line (when drawn by moving a straight line), and the generatrix 115 is one of countless generatrixes. The generatrix 115 is a straight line that runs along the convex vertex of the surface of the convex cylinder that is the light exit surface 116.

[0055] 3 and 4, the cylindrical lens 110 has a first side surface 111 intersecting the generatrix 115, a second side surface 112 intersecting the generatrix 115, a lower surface 113 parallel to the generatrix 115, and an upper surface 114 parallel to the generatrix 115. More specifically, each of the first side surface 111 and the second side surface 112 is perpendicular to the generatrix 115.

[0056] The first side surface 111 and the second side surface 112 are located at both ends in the slow axis direction (x-axis direction) of the cylindrical lens 110. Here, the first side surface 111 is located at one end on the negative x-axis side, which is one end in the slow axis direction (x-axis direction) of the cylindrical lens 110, and the second side surface 112 is located at one end on the positive x-axis side, which is the other end in the slow axis direction (x-axis direction) of the cylindrical lens 110. The first side surface 111 is a surface facing away from the second side surface 112.

[0057] The lower surface 113 is a surface facing away from the upper surface 114. The lower surface 113 is located on the negative side of the z axis relative to the incident surface 117 and the exit surface 116, and the upper surface 114 is located on the positive side of the z axis relative to the incident surface 117 and the exit surface 116.

[0058] The support member 120 will be further described with reference to FIGS. 2, 3 and 5. FIG.

[0059] Fig. 5 is a perspective view showing the support member 120 according to this embodiment. Note that Fig. 5 shows a state in which the x-axis and z-axis are reversed compared to Fig. 2, for example.

[0060] The support member 120 is a member that is bonded to the cylindrical lens 110 and supports the cylindrical lens 110. The support member 120 is also placed above the fixing member 300 and bonded to the fixing member 300.

[0061] The support member 120 has an upper surface 121 on the upper side and a lower surface 122 on the lower side. The lower surface 122 corresponds to the installation surface of the lens unit 100.

[0062] The upper surface 121 is a surface parallel to the xy plane, and the upper surface 121 and the lower surface 113 of the cylindrical lens 110 are bonded together. That is, in this embodiment, the upper surface 121 corresponds to the bonding surface of the support member 120. The bonding surface of the support member 120 is the surface to which the cylindrical lens 110 is bonded. The upper surface 121, which is the bonding surface, is also parallel to the generatrix 115. Because the lower surface 113 of the cylindrical lens 110 is bonded to the upper surface 121, which is parallel to the xy plane, the generatrix 115 of the cylindrical lens 110 is also parallel to the xy plane. The shape of the upper surface 121 when viewed from above is rectangular, and the area of ​​the upper surface 121 when viewed from above is larger than the area of ​​the cylindrical lens 110.

[0063] The lower surface 122, which is the installation surface, has a first flat surface portion 1221, a second flat surface portion 1222, and a curved installation surface portion 1223. The first flat surface portion 1221 and the second flat surface portion 1222 are parallel to each other. The first flat surface portion 1221 and the second flat surface portion 1222 are inclined with respect to the x-y plane. In other words, the first flat surface portion 1221 and the second flat surface portion 1222 are inclined in the x-axis direction from the x-y plane. In other words, they are inclined in a direction rotated around the y-axis from the x-y plane. The first flat surface portion 1221 and the second flat surface portion 1222 are located on the same plane. The first flat surface portion 1221 and the second flat surface portion 1222 do not have to be parallel to each other. The installation surface has a second reference plane, and in this embodiment, the first flat surface portion 1221 corresponds to the second reference plane.

[0064] The curved installation surface portion 1223 is a curved surface that protrudes downward from the first flat surface portion 1221 and the second flat surface portion 1222. The curved installation surface portion 1223 can also be considered to be a part of a cylindrical surface. Note that the curved installation surface portion 1223 is not limited to being a part of a cylindrical surface and may have other shapes. On the underside 122, the first flat surface portion 1221, the curved installation surface portion 1223, and the second flat surface portion 1222 are arranged in this order in the positive direction of the x-axis. The curved installation surface portion 1223 is located on the positive side of the x-axis relative to the center of the underside 122 in a front view. Therefore, the area of ​​the first flat surface portion 1221 is larger than the area of ​​the second flat surface portion 1222.

[0065] The support member 120 is formed by processing a substrate of a semiconductor material such as glass or silicon, for example, by partial etching, polishing, or cutting. The support member 120 may also be formed of a metal such as Fe or an Fe alloy, and Al ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0066] The support member 120 is attached to the fixing member 300 .

[0067] The fixing member 300 is a member having a first fixing member 310 and a second fixing member 320. The first fixing member 310 and the second fixing member 320 are made of, for example, the same material as the support member 120. In the present embodiment, the fixing member 300 has an installation surface.

[0068] First fixing member 310 has the same configuration as support member 120, but is disposed upside down both vertically and horizontally. More specifically, first fixing member 310 has upper surface 311 (third upper surface) located on the upper side and lower surface 312 on the lower side. Note that upper surface 311 corresponds to the installation surface.

[0069] The upper surface 311, which is the installation surface, has a first flat surface portion 3111, a second flat surface portion 3112, and a curved installation surface portion 3113. The first flat surface portion 3111 and the second flat surface portion 3112 are parallel to each other. The first flat surface portion 3111 and the second flat surface portion 3112 are inclined with respect to the xy plane. That is, the first flat surface portion 3111 and the second flat surface portion 3112 are inclined from the xy plane in the x-axis direction. In other words, they are inclined in a direction rotated around the y-axis from the xy plane. The first flat surface portion 3111 and the second flat surface portion 3112 are located on the same plane. In this embodiment, the first flat surface portion 3111 and the second flat surface portion 3112 are parallel to the first flat surface portion 1221 and the second flat surface portion 1222. The first flat surface portion 3111 and the second flat surface portion 3112 do not have to be parallel to each other. The installation surface has a first reference plane, and in this embodiment, the first plane portion 3111 corresponds to the first reference plane.

[0070] The curved installation surface portion 3113 is a curved surface that protrudes upward from the first flat surface portion 3111 and the second flat surface portion 3112. The curved installation surface portion 3113 can also be considered a portion of a cylindrical surface. The curved installation surface portion 3113 is not limited to being a portion of a cylindrical surface and may have other shapes. On the top surface 311, the second flat surface portion 3112, the curved installation surface portion 3113, and the first flat surface portion 3111 are arranged in this order along the positive x-axis direction. The curved installation surface portion 3113 is located on the negative x-axis side of the center of the top surface 311 in a front view. Therefore, the area of ​​the first flat surface portion 3111 is larger than the area of ​​the second flat surface portion 3112.

[0071] Support member 120 is fixed to upper surface 311, which is the installation surface. More specifically, lower surface 122 of support member 120, which is the installation surface, is fixed to upper surface 311, which is the installation surface. More specifically, curved installation surface portion 1223 of lower surface 122 is fixed to first flat surface portion 3111 of upper surface 311, and first flat surface portion 1221 of lower surface 122 is fixed to curved installation surface portion 3113 of upper surface 311.

[0072] Furthermore, upper surface 311, which is the installation surface, is installed below upper surface 231 (first upper surface).

[0073] The second fixing member 320 is a member having a flat plate shape and has an upper surface 321 and a lower surface 322 that are parallel to the xy plane. The upper surface 321 of the second fixing member 320 is bonded to the lower surface 312 of the first fixing member 310, and the lower surface 322 of the second fixing member 320 is bonded to the upper surface 251 of the fixed base 250.

[0074] In this manner, in this embodiment, fixing member 300 is installed above upper surface 251 (second upper surface).

[0075] In the components such as the cylindrical lens 110, the support member 120, the first fixing member 310, the second fixing member 320, and the fixing base 250, one component and another component are bonded to each other by a direct bonding method such as optical contact. Alternatively, one component and another component are bonded to each other via a bonding material such as low-melting-point glass. A solder material such as AuSn solder may be used as the bonding material.

[0076] As described above, the busbar 115 and the active layer are parallel, more specifically, parallel to the xy plane. Furthermore, the first planar portion 3111, which is the first reference plane, and the first planar portion 1221, which is the second reference plane, are inclined with respect to the xy plane and are parallel to each other. Therefore, the busbar 115 is inclined with respect to the first reference plane (first planar portion 3111) and the second reference plane (first planar portion 1221).

[0077] The angle α between the generatrix 115 and the first reference plane (first flat portion 3111) satisfies the following formula.

[0078] 0°<|α|<45°

[0079] Moreover, the angle β formed between the generatrix 115 and the second reference plane (first flat portion 1221) satisfies the following formula.

[0080] 0°<|β|<45°

[0081] In this embodiment, the angle α and the angle β are the same.

[0082] Referring again to FIG. 1, the components of the light source module 10 will be described.

[0083] As described above, semiconductor laser device 1 (more specifically, semiconductor laser element 200) emits laser light L1. Similarly, semiconductor laser devices 2 to 6 emit laser light L2, L3, L4, L5, and L6, respectively. Each of the multiple laser light beams (i.e., laser light L1 to L6) emitted from the multiple semiconductor laser devices is incident on slow-axis collimator lens 600 (hereinafter referred to as SAC lens 600).

[0084] The SAC lens 600 is a lens having a convex cylindrical surface. As an example, the SAC lens 600 is made of glass with an anti-reflection coating formed on its surface, and in this embodiment, it is a plano-convex cylindrical lens. In this embodiment, a plano-convex cylindrical lens is used as the SAC lens 600, but a biconvex cylindrical lens or a convex meniscus cylindrical lens with one side convex and the other concave may also be used. Furthermore, a concave reflective cylindrical mirror may also be used as the SAC lens 600.

[0085] The SAC lens 600 has a cylindrical surface that is convexly curved in the power axis, i.e., a convex cylindrical surface. The SAC lens 600 has a non-power axis in a direction perpendicular to the power axis. The SAC lens 600 is a lens that has power in the slow axis of the laser light. Each of the multiple SAC lenses 600 collimates the component of the laser light in the slow axis direction that is incident on it.

[0086] With the above configuration, the laser light emitted from each of the multiple semiconductor laser devices and passed through the SAC lens 600 travels as emitted light with its fast axis and slow axis collimated. Each of the multiple SAC lenses 600 is installed on the first stage of each of the multiple stages. For example, the SAC lens 600 onto which the laser light L1 is incident is installed on the first stage 511a.

[0087] Furthermore, a reflecting mirror 700 is arranged in the direction in which the laser light from each of the plurality of semiconductor laser devices is emitted.

[0088] Each of the multiple reflecting mirrors 700 is an optical component having an incident surface onto which the laser light that has passed through each of the multiple SAC lenses 600 is incident. The multiple reflecting mirrors 700 reflect each of the multiple laser light beams collimated by the multiple cylindrical lenses 110 and the multiple SAC lenses 600, and deflect the direction of the laser light by 90°. Each of the multiple reflecting mirrors 700 is installed on the first stage of each of the multiple stages. For example, the reflecting mirror 700 onto which the laser light L1 is incident is installed on the first stage 511a.

[0089] The multiple laser beams, each reflected by the reflecting mirror 700, are spatially combined so that they form the same optical axis in the fast axis, i.e., the z-axis direction, when each laser beam is emitted from the semiconductor laser element 200, and reach the focusing lens 800 fixed to the base 502.

[0090] The condenser lens 800 is an optical component having an incident surface onto which the laser beams that have passed through each of the multiple SAC lenses 600 are incident. Furthermore, the condenser lens 800 is also an optical component onto which the laser beams reflected by each of the multiple reflecting mirrors 700 are incident. In this embodiment, the condenser lens 800 is a lens that condenses the multiple laser beams that have reached it. The multiple parallel laser beams, each having the same fast axis as the optical axis due to the reflecting mirrors 700, are incident on the condenser lens 800. Furthermore, the multiple laser beams condensed by the condenser lens 800 are incident on the incident surface, which is the end face of the core 550a of the optical fiber 550, which is an example of the target. By providing such a condenser lens 800, the multiple laser beams can be efficiently condensed onto the end face of the core 550a, which is the target. In other words, the laser beams emitted from the multiple semiconductor laser devices and condensed by the reflecting mirror 700 are coupled to the optical fiber 550 and the core 550a.

[0091] The optical fiber 550 passes through the side wall 503. Therefore, the laser light coupled to the optical fiber 550 is guided to the outside of the light source module 10. The boot 551 is a member that covers and protects the periphery of the optical fiber 550.

[0092] It is possible to use multiple SAC lenses 600 corresponding to multiple semiconductor laser devices that all have the same shape, and it is possible to use multiple reflecting mirrors 700 corresponding to multiple semiconductor laser devices that all have the same shape.

[0093] As shown in FIG. 1, one semiconductor laser device, one SAC lens 600 and one reflecting mirror 700 are arranged on each of the multiple stages of the staircase base 510 .

[0094] [Manufacturing Method of Light Source Module] Next, an example of a manufacturing method of the light source module 10 will be described. Here, the vicinity of the semiconductor laser device 1 of the light source module 10 will be particularly described in detail, but the vicinity of the other semiconductor laser devices 2 to 6 are also manufactured in a similar manner.

[0095] First, a preparation step is performed in which the lens section 100, the laser unit 20, and the fixing member 300 are manufactured and prepared.

[0096] First, the support member 120 is manufactured. A method for manufacturing the support member 120 will be described with reference to Figures 6 to 8. Each of Figures 6 to 8 is a diagram for explaining the method for manufacturing the support member 120 according to this embodiment.

[0097] First, a silicon wafer 900 is prepared. Photolithography and dry etching are performed on the main surface of the silicon wafer 900 to form a plurality of through holes 901 as shown in FIG. 6. Next, as shown in FIG. 7, a metal film 902 may be formed on the side surfaces of the plurality of through holes 901. Furthermore, cutting is performed along the dashed lines shown in FIG. 8 to manufacture a plurality of support members 120. Note that although the support members 120 shown in FIGS. 6 to 8 are provided with the metal film 902 as described above, this metal film 902 may not be provided.

[0098] Furthermore, the cylindrical lens 110 is bonded to the support member 120. More specifically, the lower surface 113 of the cylindrical lens 110 is bonded to the upper surface 121 of the support member 120. This fixes the positional relationship between the cylindrical lens 110 and the support member 120, and the lens unit 100 is manufactured.

[0099] Next, the laser unit 20 is manufactured. The first electrode 210 and the second electrode 220 are formed on the upper surface 231 of the base material 236. The first electrode 210 and the second electrode 220 are formed by patterning a metal material. In this way, the submount 230 is manufactured. Then, a bonding member 240 is formed above the first electrode 210.

[0100] Next, the semiconductor laser element 200 is bonded to a predetermined position above the bonding member 240 by the bonding member 240. Specifically, the submount 230 is placed on a heating stage, and the semiconductor laser element 200 is placed on the bonding member 240 and pressurized. The bonding member 240 is then heated to a temperature equal to or higher than the melting point of the bonding member 240 by the heating stage, and then cooled. In this way, the submount 230 and the semiconductor laser element 200 are bonded together, and the laser unit 20 is manufactured.

[0101] Next, the laser unit 20 is fixed to the fixed base 250 .

[0102] Furthermore, the fixing member 300 is manufactured. The lower surface 312 of the first fixing member 310 is joined to the upper surface 321 of the second fixing member 320. In this way, the fixing member 300 is manufactured, and the fixing member 300 is fixed to the fixing base 250. The first fixing member 310 is manufactured in the same manner as the support member 120.

[0103] Next, the fixed base 250 to which the laser unit 20 and the fixing member 300 are fixed is fixed onto the second step 511b of the staircase base 510 of the case 501. At this time, the fixed base 250 is fixed to the second step 511b of the staircase base 510 by a bonding material (not shown). Next, the optical fiber 550, the condenser lens 800, and the reflecting mirror 700 are fixed to the case 501 in predetermined positions.

[0104] Next, an arrangement step is performed. In the arrangement step, the lens unit 100 is arranged at a predetermined position on the fixing member 300. More specifically, the lens unit 100 is arranged on the upper surface 311 of the first fixing member 310, which is the installation surface. Here, the lens unit 100 is arranged so that the laser light L1 emitted from the semiconductor laser element 200 is incident on the cylindrical lens 110 and so that the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first reference plane (first flat surface portion 3111). Note that the first flat surface portion 3111, which is the first reference plane, and the first flat surface portion 1221, which is the second reference plane, are parallel to each other. Therefore, the arrangement step can also be said to be a step of arranging the lens unit 100 so that the generatrix 115 is inclined with respect to the second reference plane (first flat surface portion 1221).

[0105] In the arrangement step, the curved installation surface portion 1223 of the lower surface 122 is arranged on the first flat surface portion 3111 of the upper surface 311, and the first flat surface portion 1221 of the lower surface 122 is arranged on the curved installation surface portion 3113 of the upper surface 311. Note that even after this arrangement step is completed, the lens unit 100 and the fixing member 300 are not joined together, that is, the positions of the lens unit 100 and the fixing member 300 are not fixed to each other. At this stage, the lens unit 100 can be moved relative to the position of the fixing member 300.

[0106] In this placement step, the SAC lens 600 is also placed at a predetermined position in the case 501 , but like the lens unit 100 , it is not fixed to the case 501 .

[0107] Next, an alignment step is performed. FIGS. 9 and 10 are front views illustrating the alignment step according to this embodiment. The alignment step is a process of moving the lens unit 100 arranged in the arrangement step. By performing the alignment step, the lens unit 100 moves from the position shown in FIG. 9 to the position shown in FIG. 10 , or from the position shown in FIG. 10 to the position shown in FIG. 9 . The alignment step also causes the laser light L1 emitted from the semiconductor laser element 200 to be incident on the cylindrical lens 110. More specifically, the alignment step is a process of moving the lens unit 100 in two mutually orthogonal directions parallel to the first reference plane (first flat portion 3111). Here, since the first reference plane (first flat portion 3111) is inclined with respect to the xy plane, the lens unit 100 can be moved in this inclined direction (hereinafter sometimes referred to as the inclined direction) and in the y-axis direction.

[0108] Here, for example, when the lens unit 100 is moved in the tilt direction along the first reference plane (first flat portion 3111), the first reference plane (first flat portion 3111) is tilted with respect to the x-axis, and therefore the generating line 115 moves in the z-axis direction at a specific position in the x-axis direction. In other words, a z-axis deviation d between the laser light L1 that has reached the cylindrical lens 110 and the generating line 115 of the cylindrical lens 110 changes. Hereinafter, at the position of the optical axis A1 of the laser light L1 that has reached the cylindrical lens 110, the distance from the z-axis position of the optical axis A1 of the laser light L1 to the z-axis position of the generating line 115 of the cylindrical lens 110 is defined as the z-axis deviation d.

[0109] As a result of moving the lens unit 100 in the tilt direction, the angle of the traveling direction of the laser light L1 emitted from the cylindrical lens 110 can be changed in the fast axis direction (z-axis direction). That is, the angle between the optical axis A1 of the laser light L1 and the optical axis (not shown) of the optical system of the light source module 10 can be controlled. For example, when the optical system of the light source module 10 is positioned as designed, the optical axis A1 of the emitted laser light L1 becomes parallel to the optical axis of the optical system of the light source module 10 by setting the z-axis misalignment d to zero (e.g., the state shown in FIG. 4 ). As a result, the coupling efficiency between the laser light L1 and the core 550a at the end face of the optical fiber 550 can be increased. Hereinafter, for simplicity, this coupling efficiency may be referred to as the coupling efficiency of the laser light L1 or simply as the coupling efficiency.

[0110] Furthermore, when the lens unit 100 is moved in the y-axis direction, the distance between the incident surface 117 of the cylindrical lens 110 and the light-emitting region 201 is changed. As a result, it is possible to control the parallelism of the laser light L1 emitted from the cylindrical lens 110. As a result, it is possible to further increase the coupling efficiency between the laser light L1 and the core 550a.

[0111] Furthermore, when the lens unit 100 is moved, a device such as a collet comes into contact with the support member 120, thereby moving the lens unit 100. In other words, the collet does not come into direct contact with the cylindrical lens 110.

[0112] In the alignment step, the lens unit 100 can be moved as a whole. That is, the entire lens unit 100 can be moved while the positional relationship between the cylindrical lens 110 and the support member 120 is fixed.

[0113] In the alignment step, the position of the lens unit 100 is moved, that is, the position of the lens unit 100 is adjusted, so that the coupling efficiency between the emitted laser light L1 and the optical fiber 550 is increased.

[0114] Here, for example, in this alignment step, it is preferable to move the lens unit 100 while the semiconductor laser element 200 is emitting the laser light L1. The laser light L1 emitted from the semiconductor laser element 200 passes through the cylindrical lens 110, the SAC 600, the reflecting mirror 700, and the condenser lens 800, and is then condensed onto the end face of the optical fiber 550.

[0115] At this time, the position of the lens unit 100 is adjusted while observing the light intensity of the laser light L1 emitted from the optical fiber 550. Specifically, the lens unit 100 is slightly moved in the tilt direction and the y-axis direction. At this time, so-called active alignment is performed, in which the position of the lens unit 100 is adjusted so that the light intensity of the laser light L1 emitted from the optical fiber 550 is maximized.

[0116] Furthermore, a fixing step is performed in which the lens unit 100 moved in the alignment step is fixed to the installation surface (upper surface 311).

[0117] For example, when heat is applied to a joining member (not shown) provided between the lens unit 100 and the fixing member 300, the solder material constituting the joining member melts, and the lens unit 100 and the mounting surface (upper surface 311) are fixed together. By performing the fixing step, the semiconductor laser device 1 shown in FIG. 2 is manufactured.

[0118] As described above, the method for manufacturing the light source module 10 according to this embodiment includes a placement step, an alignment step, and a fixing step.

[0119] As described above, the alignment step is a process of moving the lens unit 100, that is, the cylindrical lens 110. In other words, the cylindrical lens 110 according to this embodiment is a position-adjusting lens whose position can be adjusted in order to optimize the optical axis A1 and parallelism of the laser light L1 in the semiconductor laser device 1.

[0120] [Influence of angles α and β] In this embodiment, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first reference plane (first flat portion 3111) and is also inclined with respect to the second reference plane (first flat portion 1221). The influence on alignment of the angle α between the generatrix 115 and the first reference plane (first flat portion 3111) and the angle β between the generatrix 115 and the second reference plane (first flat portion 1221) will be described below. Note that in this embodiment, the angles α and β are the same.

[0121] 11 is a diagram showing the relationship between the angles α and β according to this embodiment and the amount of movement (Δz) of the cylindrical lens 110 in the z-axis direction and the amount of movement (Δx) of the cylindrical lens 110 in the x-axis direction. Note that, hereinafter, the amount of movement in the z-axis direction may be referred to as Δz, and the amount of movement in the x-axis direction may be referred to as Δx.

[0122] 11, the horizontal axis represents angles α and β, and the vertical axis represents −Δz / Δx. As described above, angle α and angle β are equal, and therefore angle α and angle β are both shown.

[0123] Here, Δz and Δx will be described with reference to FIGS.

[0124] Fig. 12 is a front view showing an example before the lens unit 100 (more specifically, the cylindrical lens 110) is moved in the tilt direction in the alignment step according to this embodiment. Fig. 13 is a front view showing an example after the lens unit 100 (more specifically, the cylindrical lens 110) is moved in the tilt direction in the alignment step according to this embodiment. For simplicity, Figs. 12 and 13 mainly show the cylindrical lens 110, the support member 120, and the semiconductor laser element 200.

[0125] A case will be described in which the cylindrical lens 110 moves from the position in FIG. 12 to the position in FIG. 13 during the alignment step. The amount of movement of the cylindrical lens 110 in the x-axis direction from the position in FIG. 12 to the position in FIG. 13 is Δx. For simplicity of explanation, a case is shown here in which the position of the optical axis A1 of the laser light L1 reaching the cylindrical lens 110 coincides with the center position of the light-emitting region 201. In this case, the z-axis misalignment d between the light-emitting region 201 and the generatrix 115 changes from d1 shown in FIG. 12 to d2 shown in FIG. 13 when viewed from the front. That is, in this embodiment, when the cylindrical lens 110 moves in the tilt direction, the z-axis misalignment d between the generatrix 115 and the light-emitting region 201 changes. In this case, Δz = d2 - d1. In this way, the Δz of the cylindrical lens 110 represents the amount of change in the z-axis misalignment d between the light-emitting region 201 and the generatrix 115 when viewed from the front when the cylindrical lens 110 moves in the tilt direction.

[0126] As shown in FIG. 11 , when the angle α satisfies 0°<α<45°, −Δz / Δx is greater than 0 and less than 1. Similarly, although not shown, when the angle α satisfies -45°<α<0°, −Δz / Δx is greater than -1 and less than 0. In summary, when the angle α satisfies 0°<|α|<45°, |Δz| / |Δx| is less than 1. Similarly, when the angle β satisfies 0°<β<45°, −Δz / Δx is greater than 0 and less than 1. Similarly, although not shown, when the angle β satisfies -45°<β<0°, −Δz / Δx is greater than -1 and less than 0. In summary, when the angle β satisfies 0°<|β|<45°, |Δz| / |Δx| is less than 1. In other words, in the position adjustment of the lens unit 100 in the alignment step, the absolute value of Δz is always smaller than the absolute value of Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the precision of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the precision of the manufacturing equipment. Therefore, the optical axis A1 of the laser light L1 emitted from the cylindrical lens 110 can be precisely made parallel to the xy plane, or the optical axis A1 of the emitted laser light L1 can be made parallel to the optical axis of the optical system of the light source module 10. For example, when the angles α and β are 6°, the vertical axis of FIG. 11 is 0.1, and the position in the z-axis direction can be adjusted with an accuracy 10 times the precision of the equipment.

[0127] Furthermore, Δz and Δx will be described.

[0128] 14 is a diagram showing the relationship between the angles α and β, Δz, and Δx according to this embodiment, where Δx and Δz are shown when the angles α and β are 0°, 1°, 3°, 6°, and 10°.

[0129] As described above, when the cylindrical lens 110 moves in the tilt direction, the z-axis direction deviation d between the generatrix 115 and the light-emitting region 201 changes. In other words, the movement of the cylindrical lens 110 in the x-axis direction can be converted into the movement of the cylindrical lens 110 in the z-axis direction. Furthermore, when |Δz| / |Δx| is less than 1, the absolute value of the amount of change in position in the z-axis direction can be made gentler than the absolute value of the amount of change in position in the x-axis direction.

[0130] For example, in order to adjust the z-axis deviation d within a range of ±1 μm, the following control may be performed. When the angles α and β are 1°, the position of the lens unit 100 may be changed within a range of ±57 μm in the x-axis direction. When the angles α and β are 6°, the position of the lens unit 100 may be changed within a range of ±9.5 μm in the x-axis direction. In this way, when it is desired to slightly change the distance in the z-axis direction between the light-emitting region 201 and the generatrix 115, the lens unit 100 may be moved by a larger amount in the tilt direction. In other words, the effect is achieved of more easily adjusting the position of the cylindrical lens 110 (more specifically, the generatrix 115) in the z-axis direction. It is even more preferable that α satisfies 0.5°≦|α|≦2° and β satisfies 0.5°≦|β|≦2° so that −Δz / Δx is 0.01 or greater and the coupling efficiency between the laser light and the target object is 0.7 or greater.

[0131] As shown in Figure 14, when the angle β is β = 0° (i.e., when the generatrix 115 and the first reference plane (first flat portion 3111) are parallel), even if the lens unit 100 moves, the lens unit 100 (the generatrix 115 of the cylindrical lens 110) does not move in the z-axis direction. Therefore, the above effect cannot be obtained. The same applies when the angle α is α = 0°.

[0132] The following describes modifications 1 to 5 of embodiment 1. The following description focuses on the differences from embodiment 1, and omits or simplifies the description of commonalities.

[0133] First Modification of First Embodiment FIG. 15 is a front view showing the configuration of a semiconductor laser device 1a according to a first modification of the first embodiment.

[0134] The semiconductor laser device 1 a according to this modification has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that the lens portion 100 and the fixing member 300 are replaced with a lens portion 100 a and a fixing member 300 a.

[0135] The lens unit 100a is a member having a cylindrical lens 110 and a support member 120a. The support member 120a has the same configuration as the support member 120, except that it has a lower surface 122a instead of the lower surface 122. In this modification, the lower surface 122a also corresponds to the installation surface.

[0136] The lower surface 122a has a first flat surface portion 1221a, a second flat surface portion 1222a, and a curved installation surface portion 1223a. The first flat surface portion 1221a and the second flat surface portion 1222a are parallel to each other. The first flat surface portion 1221a and the second flat surface portion 1222a are parallel to the xy plane. The first flat surface portion 1221a and the second flat surface portion 1222a are located on the same plane. Note that the first flat surface portion 1221a and the second flat surface portion 1222a do not have to be parallel to each other.

[0137] The curved installation surface portion 1223a is a curved surface that protrudes downward from the first flat surface portion 1221a and the second flat surface portion 1222a. The curved installation surface portion 1223a can also be considered a part of a cylindrical surface. On the lower surface 122a, the first flat surface portion 1221a, the curved installation surface portion 1223a, and the second flat surface portion 1222a are arranged in this order in the positive direction of the x-axis. The curved installation surface portion 1223a is located at the center of the lower surface 122a when viewed from the front. Therefore, the area of ​​the first flat surface portion 1221a is approximately the same as the area of ​​the second flat surface portion 1222a.

[0138] The fixed member 300a has the same configuration as the fixed member 300, except that it has a first fixed member 310a instead of the first fixed member 310. In this modification, the fixed member 300a also has an installation surface. The installation surface has a first reference plane, and in this modification, the installation surface is the first reference plane.

[0139] The first fixing member 310a has a trapezoidal prism shape when viewed from the front. The first fixing member 310a has an upper surface 311a located on the upper side and a lower surface 312 on the lower side. The upper surface 311a corresponds to the installation surface, i.e., the first reference plane.

[0140] The upper surface 311a, which is the installation surface, is configured as a plane that is inclined with respect to the xy plane. In other words, unlike the upper surface 311 according to the first embodiment, the upper surface 311a does not have the installation surface curved surface portion 3113.

[0141] A lower surface 122a of the support member 120a, which is the installation surface, is fixed to an upper surface 311a, which is the installation surface. More specifically, a curved installation surface portion 1223a of the lower surface 122a is fixed to the upper surface 311a.

[0142] In this modification, the generatrix 115 and the first flat portion 1221a are parallel to the xy plane. The upper surface 311a, which is the first reference plane, is inclined with respect to the xy plane. Therefore, the generatrix 115 is inclined with respect to the first reference plane (the upper surface 311a).

[0143] The angle α between the generatrix 115 and the first reference plane (upper surface 311a) satisfies the following formula.

[0144] 0°<|α|<45°

[0145] The alignment step according to this modification is performed as follows.

[0146] The alignment step is a process of moving the lens unit 100a in two mutually orthogonal directions parallel to the first reference plane (top surface 311a). Here, since the first reference plane (top surface 311a) is inclined with respect to the xy plane, the lens unit 100a can be moved in the inclined direction and the y-axis direction.

[0147] In this modification, too, the absolute value of Δz is always smaller than the absolute value of Δx in the position adjustment of lens unit 100a in the alignment step, as in the effect shown in embodiment 1. Therefore, when the position of lens unit 100a in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0148] Second Modification of First Embodiment FIG. 16A is a front view showing the configuration of a semiconductor laser device 1b according to a second modification of the first embodiment.

[0149] The semiconductor laser device 1b according to this modification has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that the lens portion 100 and the fixing member 300 are replaced with a lens portion 100b and a fixing member 300b.

[0150] The lens unit 100b is a member having a cylindrical lens 110 and a support member 120b. The support member 120b has the same configuration as the support member 120, except that it has a trapezoidal prism shape when viewed from the front, and has an upper surface 121 and a lower surface 122b. In this modification, the lower surface 122b also corresponds to the installation surface. The installation surface has a second reference plane, and in this modification, the installation surface is the second reference plane.

[0151] The lower surface 122b, which is the installation surface and also the second reference plane, is configured as a plane that is inclined with respect to the xy plane. In other words, unlike the lower surface 122 according to the first embodiment, the lower surface 122b does not have the installation surface curved portion 1223.

[0152] The fixing member 300b has the same configuration as the fixing member 300, except that it has a first fixing member 310b instead of the first fixing member 310. Also in this modification, the fixing member 300b has an installation surface.

[0153] The first fixing member 310b is a surface having a first flat surface portion 3111b, a second flat surface portion 3112b, and a curved installation surface portion 3113b. The first flat surface portion 3111b and the second flat surface portion 3112b are parallel to each other. The first flat surface portion 3111b and the second flat surface portion 3112b are parallel to the xy plane. The first flat surface portion 3111b and the second flat surface portion 3112b are located on the same plane. The first flat surface portion 3111b and the second flat surface portion 3112b do not have to be parallel to each other.

[0154] The curved installation surface portion 3113b is a curved surface that protrudes upward from the first flat surface portion 3111b and the second flat surface portion 3112b. The curved installation surface portion 3113b can also be considered a part of a cylindrical surface. On the top surface 311b, the second flat surface portion 3112b, the curved installation surface portion 3113b, and the first flat surface portion 3111b are arranged in this order in the positive direction of the x-axis. The curved installation surface portion 3113b is located in the center of the top surface 311b when viewed from the front. Therefore, the area of ​​the first flat surface portion 3111b is approximately the same as the area of ​​the second flat surface portion 3112b.

[0155] The lower surface 122b of the support member 120b, which is the installation surface and the second reference plane, is fixed to the upper surface 311b, which is the installation surface. More specifically, the lower surface 122b is fixed to the curved surface portion 3113b of the upper surface 311b.

[0156] In this modification, the generatrix 115 and the first flat portion 3111b are parallel to the xy plane. The lower surface 122b, which is the second reference plane, is inclined with respect to the xy plane. Therefore, the generatrix 115 is inclined with respect to the second reference plane (the lower surface 122b).

[0157] The angle β formed between the generatrix 115 and the second reference plane (lower surface 122b) satisfies the following formula.

[0158] 0°<|β|<45°

[0159] The alignment step according to this modification is performed as follows.

[0160] The alignment step is a process of moving the lens unit 100b in two mutually orthogonal directions parallel to the second reference plane (lower surface 122b). Here, since the second reference plane (lower surface 122b) is inclined with respect to the xy plane, the lens unit 100b can be moved in the inclined direction and the y-axis direction.

[0161] In this modification, too, the absolute value of Δz is always smaller than the absolute value of Δx in the position adjustment of lens unit 100b in the alignment step, as in the effect shown in embodiment 1. Therefore, when the position of lens unit 100b in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0162] [Third Modification of First Embodiment] Fig. 16B is a perspective view showing a configuration of a semiconductor laser device if according to a third modification of the first embodiment. Fig. 16C is a cross-sectional view showing a cut surface of the semiconductor laser device if taken along line XVIC-XVIC in Fig. 16B.

[0163] The semiconductor laser device 1f of this modified example has the same configuration as the semiconductor laser device 1 of embodiment 1, mainly except that it has a lens unit 100f and a fixed base 250f instead of the lens unit 100 and the fixed base 250, and does not have the fixed member 300.

[0164] The lens unit 100f is a member having a cylindrical lens 110 and a support member 120f. In this modification, the generatrix 115 of the cylindrical lens 110 is also parallel to the xy plane.

[0165] The support member 120f includes a first support member 120f1 and a second support member 120f2.

[0166] The first support member 120f1 is a member fixed to the first side surface 111 of the cylindrical lens 110. The second support member 120f2 is a member fixed to the second side surface 112 of the cylindrical lens 110.

[0167] The support member 120f has a bonding surface to which the cylindrical lens 110 is bonded, and each of the first side surface 111 and the second side surface 112 corresponds to the bonding surface. That is, in this modified example, two bonding surfaces are provided.

[0168] The first support member 120f1 and the second support member 120f2 have a rectangular prism shape. In this modification, the rectangular prism shape of the first support member 120f1 and the second support member 120f2 extends in the z-axis direction. Note that the shape of the first support member 120f1 and the second support member 120f2 is not limited to a rectangular prism shape and may be other shapes.

[0169] The first support member 120f1 has a first support flat surface portion 121f1, four side surfaces, and a first support curved surface portion 122f1. In this modification, the first support flat surface portion 121f1 is the top surface of the first support member 120f1 and is a plane parallel to the xy plane.

[0170] In this modified example, two of the four side surfaces are planes parallel to the yz plane and facing away from each other, and the other two side surfaces are planes parallel to the zx plane and facing away from each other. In this modified example, the first support curved surface portion 122f1 is a curved surface located at the bottom of the first support member 120f1 and protrudes downward. The first support curved surface portion 122f1 can also be considered a portion of a cylindrical surface. Note that the first support curved surface portion 122f1 is not limited to a portion of a cylindrical surface and may have other shapes. The first support curved surface portion 122f1 is connected to each of the two side surfaces parallel to the yz plane.

[0171] Of the two side surfaces parallel to the yz plane, the side surface located on the positive x-axis side is fixed to a first side surface 111 of the cylindrical lens 110 .

[0172] The second support member 120f2 has the same size and shape as the first support member 120f1.

[0173] The second support member 120f2 has a second support flat surface portion 121f2, four side surfaces, and a second support curved surface portion 122f2. In this modification, the second support flat surface portion 121f2 is the upper surface of the second support member 120f2 and is a plane parallel to the xy plane.

[0174] In this modification, of the four side surfaces, two side surfaces are planes parallel to the yz plane and facing back to back, and the other two side surfaces are planes parallel to the zx plane and facing back to back.

[0175] In this modification, the second support curved surface portion 122f2 is a curved surface located at the bottom of the second support member 120f2 and protrudes downward. The second support curved surface portion 122f2 can also be considered a portion of a cylindrical surface. Note that the second support curved surface portion 122f2 is not limited to a portion of a cylindrical surface and may have other shapes. The second support curved surface portion 122f2 is connected to each of the two side surfaces parallel to the yz plane.

[0176] Of the two side surfaces parallel to the yz plane, the side surface located on the negative side of the x axis is fixed to a second side surface 112 of the cylindrical lens 110 .

[0177] Now, let's compare the positions of the first support member 120f1 and the second support member 120f2 in the z-axis direction. The first support member 120f1 is located closer to the positive side of the z-axis than the second support member 120f2. That is, the top surface of the first support member 120f1 (first support flat surface portion 121f1) is located closer to the positive side of the z-axis than the top surface of the second support member 120f2 (second support flat surface portion 121f2), and the first support curved surface portion 122f1 of the first support member 120f1 is located closer to the positive side of the z-axis than the second support curved surface portion 122f2 of the second support member 120f2.

[0178] Furthermore, the upper surface of the first support member 120f1 (first support flat portion 121f1), the upper surface of the second support member 120f2 (second support flat portion 121f2), and the upper surface 114 of the cylindrical lens 110 are at different heights, i.e., at different positions in the z-axis direction.

[0179] The first curved support surface 122f1 and the second curved support surface 122f2 each correspond to a mounting surface of the lens unit 100f. That is, in this modified example, two mounting surfaces are provided.

[0180] Each of the first support member 120f1 and the second support member 120f2 is formed by processing a substrate of a semiconductor material such as glass or silicon, for example, by partial etching, polishing, or cutting. Each of the first support member 120f1 and the second support member 120f2 may be formed of a metal such as Fe or an Fe alloy, and Al ２ O ３ , ZrO ２ , Si３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0181] The fixed base 250f has the same configuration as the fixed base 250, except that it has a recess 252 recessed from an upper surface 251 (second upper surface) and that the recess 252 has a bottom surface 253.

[0182] The recess 252 is a region recessed toward the negative side of the z-axis from the upper surface 251. The recess 252 does not extend from the upper surface 251 to the lower surface of the fixing base 250f. The recess 252 is provided on the negative side of the y-axis with respect to the semiconductor laser element 200.

[0183] In this modification, the bottom surface 253 of the recess 252 is a flat surface. The bottom surface 253 is a flat surface that is inclined with respect to the xy plane. In other words, the bottom surface 253 is a surface that is inclined in the x-axis direction from the xy plane, or in other words, a surface that is inclined in a direction rotated around the y-axis from the xy plane.

[0184] In this modification, the bottom surface 253 is the installation surface. More specifically, the bottom surface 253 is also the first reference plane of the installation surface. Note that, because the bottom surface 253 is inclined with respect to the xy plane, this inclined direction may be referred to as the inclined direction hereinafter.

[0185] The first supporting curved surface portion 122f1 and the second supporting curved surface portion 122f2, each of which corresponds to the installation surface, are fixed to the bottom surface 253, which is the installation surface. Here, the first supporting curved surface portion 122f1 and the bottom surface 253 are joined by a bonding material 401. The second supporting curved surface portion 122f2 and the bottom surface 253 are joined by a bonding material 402.

[0186] The bonding materials 401 and 402 are each made of low-melting-point glass, but are not limited to this and may be made of a solder material such as AuSn solder. Furthermore, the first support curved surface portion 122f1 and the second support curved surface portion 122f2 may be bonded to the bottom surface 253 by a direct bonding method such as optical contact.

[0187] In addition, it is preferable that a metal film be provided on the first support curved surface portion 122f1 for bonding with the bonding material 401, and it is preferable that a metal film be provided on the second support curved surface portion 122f2 for bonding with the bonding material 402.

[0188] Next, an example of a method for manufacturing the semiconductor laser device 1f according to this modification will be described.

[0189] First, the support member 120f is manufactured. Fig. 16D is a diagram for explaining a method for manufacturing the support member 120f according to the third modification of the first embodiment.

[0190] Here, an example of manufacturing the first support member 120f1 of the support member 120f will be described. Note that since the first support member 120f1 and the second support member 120f2 have the same size and shape, the second support member 120f2 is manufactured using the same method as the first support member 120f1.

[0191] 16D shows an elongated plate member 1200f having a curved surface on the bottom. This plate member 1200f is made of, for example, glass, and is cut along a cutting plane perpendicular to the longitudinal direction of the plate member 1200f to produce the first support member 120f1. In FIG. 16D, the locations cut along the multiple cutting planes are indicated by dashed lines.

[0192] 16E and 16F are diagrams illustrating a method for manufacturing a lens portion 100f according to the third modification of the first embodiment.

[0193] 16E, a first support member 120f1 and a second support member 120f2 are bonded to the cylindrical lens 110. More specifically, the first support member 120f1 is bonded to the first side surface 111, and the second support member 120f2 is bonded to the second side surface 112. At this time, the first support member 120f1 and the second support member 120f2 are bonded to the cylindrical lens 110 using solder bonding, low-melting-point glass bonding, optical contact, or the like.

[0194] As described above, the upper surface of the first support member 120f1 (first support flat portion 121f1), the upper surface of the second support member 120f2 (second support flat portion 121f2), and the upper surface 114 of the cylindrical lens 110 are bonded at different heights, i.e., at different positions in the z-axis direction. In Figure 16E, the dashed arrow indicates the direction in which the first support member 120f1 and the second support member 120f2 are arranged on the cylindrical lens 110. In this way, the lens unit 100f is manufactured, as shown in Figure 16F.

[0195] Preferably, the semiconductor laser element 200 is mounted on a submount 230, which is mounted on the upper surface 251 of the fixed base 250f. As described in the first embodiment, the fixed base 250f is fixed onto the second step 511b of the stepped base 510 of the case 501.

[0196] FIG. 16G is a diagram for explaining the arrangement of the lens unit 100f on the fixed base 250f according to the third modification of the first embodiment.

[0197] The lens unit 100f is placed on the fixed base 250f. In this modification, the lens unit 100f is placed so that the first curved support portion 122f1 and the second curved support portion 122f2 are in contact with the bottom surface 253. At this time, the lens unit 100f and the fixed base 250f are not bonded together, that is, the positions of the lens unit 100f and the fixed base 250f are not fixed to each other. At this stage, the lens unit 100f can be moved relative to the position of the fixed base 250f.

[0198] At this point, it is preferable to perform the alignment step described in Embodiment 1. In this modification, the alignment step is a process of moving the lens portion 100f arranged on the bottom surface 253.

[0199] The alignment step is a step of making the laser light L1 emitted from the semiconductor laser element 200 incident on the cylindrical lens 110. More specifically, the alignment step is a step of moving the lens unit 100f in two mutually perpendicular directions parallel to the first reference plane (bottom surface 253). Here, since the first reference plane (bottom surface 253) is inclined with respect to the xy plane, the lens unit 100f can be moved in this inclined direction (inclination direction) and in the y-axis direction.

[0200] In the alignment step, the position of the lens portion 100f is moved, that is, the position of the lens portion 100f is adjusted, so that the coupling efficiency between the emitted laser light L1 and the optical fiber 550 is increased.

[0201] Furthermore, the fixing step is carried out as described in the first embodiment. The fixing step is a process of fixing the lens unit 100f, which has been moved in the alignment step, to the installation surface (bottom surface 253).

[0202] Here, the first supporting curved surface portion 122f1 and the second supporting curved surface portion 122f2, which correspond to the installation surface, are fixed to the bottom surface 253, which is the installation surface. In this way, the semiconductor laser device 1f shown in Figures 16B and 16C is manufactured.

[0203] As a result, in this modification, the generating line 115 is parallel to the xy plane. The bottom surface 253, which is the first reference plane, is inclined with respect to the xy plane. Therefore, the generating line 115 is inclined with respect to the first reference plane (bottom surface 253).

[0204] The angle α between the generatrix 115 and the first reference plane (bottom surface 253) satisfies the following formula.

[0205] 0°<|α|<45°

[0206] The alignment step according to this modification is performed as described above.

[0207] That is, the alignment step is a process of moving the lens unit 100f in two mutually perpendicular directions parallel to the first reference plane (bottom surface 253). Here, since the first reference plane (bottom surface 253) is inclined with respect to the xy plane, the lens unit 100f can be moved in the inclined direction and the y-axis direction.

[0208] In this modification, as in the effect shown in embodiment 1, the absolute value of Δz is always smaller than the absolute value of Δx in the position adjustment of lens unit 100f in the alignment step. Therefore, when the position of lens unit 100f in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0209] [Fourth Modification of First Embodiment] FIG. 16H is a plan view of a semiconductor laser device 1g according to a fourth modification of the first embodiment.

[0210] The semiconductor laser device 1g has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that it includes a laser unit 20g and a lens unit 100g instead of the laser unit 20 and the lens unit 100, and does not include the fixing member 300. The semiconductor laser device 1g may or may not include a fixing base 250.

[0211] The laser unit 20 g includes a semiconductor laser element 200 , a submount 230 g , and a bonding member 240 .

[0212] The submount 230g includes a base material 236g and a spacer 237g. In the submount 230g, the spacer 237g is provided above the base material 236g.

[0213] The base material 236g is a plate-shaped base material made of a high heat dissipation material, such as a ceramic material, for example, aluminum nitride or silicon carbide, etc. In this embodiment, the base material 236g is made of an insulating material.

[0214] The base material 236g has a parallelogram shape in a plan view. The submount 230g has a mounting surface which is a front side surface 231g, which is the side surface on the negative side of the y-axis of the base material 236g. The spacer 237g is made of a metal material with high thermal conductivity, such as copper.

[0215] The substrate 236g has a thickness of, for example, 0.1 mm or more and 1.0 mm or less (more specifically, the thickness in the z-axis direction), and the spacer 237g has a thickness of, for example, 0.01 mm or more and 0.5 mm or less (more specifically, the thickness in the z-axis direction).

[0216] The spacer 237g is patterned and formed on the upper surface of the substrate 236g. The outer shape of the spacer 237g is smaller than the outer shape of the substrate 236g in a plan view of the submount 230g. The spacer 237g has a convex shape in a plan view, and more specifically, has a protruding portion that protrudes in the negative y-axis direction. In other words, the spacer 237g protrudes near the position where the light-emitting end face 205 of the semiconductor laser element 200 is disposed.

[0217] The side surfaces of the spacer 237g at the position where the light emitting end surface 205 is disposed include outer side surfaces 231gR and 231gL and a central side surface 231gF, and the central side surface 231gF protrudes from the outer side surfaces 231gR and 231gL. The central side surface 231gF is a plane perpendicular to the yz plane.

[0218] Then, the bonding member 240 is formed on the spacer 237g including the protruding portion. The semiconductor laser element 200 is fixed to the upper part of the bonding member 240. At this time, the semiconductor laser element 200 is fixed to the submount 230g so that the light emitting end face 205 is parallel to the side surface 231gF of the central portion. In other words, the semiconductor laser element 200 is fixed to the submount 230g so that the optical waveguide of the semiconductor laser element 200 is parallel to the y-axis direction.

[0219] Furthermore, the light-emitting end face 205 of the semiconductor laser element 200 is fixed so as to be coincident with the central side face 231gF of the submount 230g or to protrude slightly from the central side face 231gF in the emission direction of the laser light L1. With this configuration, the light-emitting end face 205 is parallel to the central side face 231gF, so the amount of protrusion of the light-emitting end face 205 from the central side face 231gF can be adjusted with high precision. Therefore, even if the shape of the base material 236g in a plan view is a parallelogram, the distance between the light-emitting region 201 and the front side face 231g of the submount 230g can be adjusted with high precision in the vicinity of the joint between the semiconductor laser element 200 and the submount 230g.

[0220] The front side surface 231g is a flat surface. The front side surface 231g is a flat surface that is inclined with respect to the zx plane. In other words, the front side surface 231g is a surface that is inclined from the zx plane in the x-axis direction, or in other words, a surface that is inclined in a direction rotated around the z-axis from the zx plane. In this modified example, the front side surface 231g is a surface on which the device is placed. More specifically, the front side surface 231g is also a first reference plane that the device is placed on.

[0221] The lens unit 100 g is composed of a support member 120 g and a cylindrical lens 110 .

[0222] In this modification, the generatrix 115 is parallel to the x-axis direction, more specifically, parallel to the zx plane.

[0223] The support member 120g has a first support member 120f1 and a second support member 120f2, similar to the support member 120f in Modification 3 of Embodiment 1. In Modification 3, the rectangular prism shapes of the first support member 120f1 and the second support member 120f2 extend in the z-axis direction, but in this modification, the rectangular prism shapes of the first support member 120f1 and the second support member 120f2 extend in the y-axis direction.

[0224] That is, in this modification, the first support flat surface portion 121f1 is a flat surface located on the negative side of the y-axis, and the first support curved surface portion 122f1 is a curved surface located on the positive side of the y-axis. Similarly, the second support flat surface portion 121f2 is a flat surface located on the negative side of the y-axis, and the second support curved surface portion 122f2 is a curved surface located on the positive side of the y-axis.

[0225] Additionally, the first support flat surface 121f1 of the first support member 120f1 is located on the negative side of the y-axis relative to the second support flat surface 121f2 of the second support member 120f2. The first support curved surface 122f1 of the first support member 120f1 is located on the negative side of the y-axis relative to the second support curved surface 122f2 of the second support member 120f2.

[0226] As in Modification 3, the first support member 120f1 has two side surfaces parallel to the yz plane, and the side surface located on the positive side of the x-axis is fixed to the first side surface 111 of the cylindrical lens 110. As in Modification 3, the second support member 120f2 has two side surfaces parallel to the yz plane, and the side surface located on the negative side of the x-axis is fixed to the second side surface 112 of the cylindrical lens 110.

[0227] The first curved support surface 122f1 and the second curved support surface 122f2 each correspond to a mounting surface of the lens unit 100g. That is, in this modified example, two mounting surfaces are provided.

[0228] In this modification, the generatrix 115 is parallel to the zx plane. Furthermore, the front side surface 231g, which is the first reference plane, is inclined with respect to the zx plane. Therefore, the generatrix 115 is inclined with respect to the first reference plane (the front side surface 231g).

[0229] The angle α between the generatrix 115 and the first reference plane (the front side surface 231g) satisfies the following formula.

[0230] 0°<|α|<45°

[0231] The alignment step according to this modification is performed as follows.

[0232] The alignment step is a process of moving the lens unit 100g in two mutually orthogonal directions parallel to the first reference plane (the front side surface 231g). Here, since the first reference plane (the front side surface 231g) is inclined with respect to the zx plane, the lens unit 100a can be moved in the inclined direction and the z-axis direction.

[0233] In the first embodiment, it was described that when the angle α satisfies 0°<|α|<45°, |Δz| / |Δx| is less than 1. Here, the amount of movement of the cylindrical lens 110 in the y-axis direction is Δy. In this modified example, due to the above configuration, when the angle α satisfies 0°<|α|<45°, |Δy| / |Δx| is less than 1. Therefore, movement of the cylindrical lens 110 in the x-axis direction can be converted into movement of the cylindrical lens 110 in the y-axis direction. Furthermore, when |Δy| / |Δx| is less than 1, the absolute value of the amount of change in position in the y-axis direction can be made gentler than the absolute value of the amount of change in position in the x-axis direction.

[0234] In this modification, when the position of the lens unit 100g is adjusted in the alignment step, the absolute value of Δy is always smaller than the absolute value of Δx. Therefore, when the position of the lens unit 100g in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0235] [Fifth Modification of First Embodiment] In the fifth modification, differences from the third modification will be mainly described, and descriptions of commonalities will be omitted or simplified.

[0236] Fig. 16I is a cross-sectional view showing the configuration of a semiconductor laser device 1h according to Modification 5 of Embodiment 1. More specifically, the cross-sectional view shown in Fig. 16I is a cross-sectional view of the semiconductor laser device 1h cut along the cut surface shown in the cross-sectional view in Fig. 16C.

[0237] The semiconductor laser device 1h according to this modification has the same configuration as the semiconductor laser device 1f according to the modification 3 of the first embodiment, except that it includes a lens portion 100h instead of the lens portion 100f.

[0238] The lens unit 100h is a member having a cylindrical lens 110 and a support member 120h. The lens unit 100h has an installation side, and this installation side is provided on the support member 120h. Note that in this modification as well, the generatrix 115 of the cylindrical lens 110 is parallel to the xy plane.

[0239] The support member 120h has a first support member 120h1 and a second support member 120h2.

[0240] The first support member 120h1 has the same configuration as the first support member 120f1, except that it has two inclined surfaces 124h1 and 125h1 and an installation side 123h1 instead of the first curved support surface portion 122f1.

[0241] That is, the first support member 120h1 has a first support flat portion 121f1, four side surfaces, two inclined surfaces 124h1 and 125h1, and an installation side 123h1.

[0242] Each of the two inclined surfaces 124h1 and 125h1 is a flat surface located at the bottom of the first support member 120h1. Each of the two inclined surfaces 124h1 and 125h1 is inclined with respect to the first support flat surface portion 121f1, which is parallel to the xy plane. Each of the two inclined surfaces 124h1 and 125h1 is also a lower surface provided on a downwardly protruding region 126h1 of the first support member 120h1. The region 126h1 has a triangular shape when viewed in the y-axis direction as shown in FIG. 16I.

[0243] The installation edge 123h1 is the edge where the two inclined surfaces 124h1 and 125h1 are connected, and is the edge located at the lowest position of the first support member 120h1. The installation edge 123h1 is the edge located at the vertex of the triangular shape of the region 126h1. The installation edge 123h1 is the edge extending in the y-axis direction.

[0244] The second support member 120h2 has the same size and shape as the first support member 120h1.

[0245] The second support member 120h2 has the same configuration as the second support member 120f2, except that it has two inclined surfaces 124h2 and 125h2 and an installation side 123h2 instead of the second curved support surface portion 122f2.

[0246] That is, the second support member 120h2 has a second support flat portion 121f2, four side surfaces, two inclined surfaces 124h2 and 125h2, and an installation side 123h2.

[0247] Each of the two inclined surfaces 124h2 and 125h2 is a flat surface located at the bottom of the second support member 120h2. Each of the two inclined surfaces 124h2 and 125h2 is inclined with respect to the second support flat surface portion 121f2, which is parallel to the xy plane. Each of the two inclined surfaces 124h2 and 125h2 is also a lower surface provided on a downwardly protruding region 126h2 of the second support member 120h2. The region 126h2 has a triangular shape when viewed in the y-axis direction as shown in FIG. 16I.

[0248] The installation edge 123h2 is the edge where the two inclined surfaces 124h2 and 125h2 are connected, and is the edge located at the lowest position of the second support member 120h2. The installation edge 123h2 is the edge located at the vertex of the triangular shape of the region 126h2. The installation edge 123h2 is the edge extending in the y-axis direction.

[0249] The installation sides 123h1 and 123h2 correspond to the installation sides provided on the support member 120h. That is, in this modification, the support member 120h is provided with two installation sides 123h1 and 123h2.

[0250] The installation side 123h1 of the first support member 120h1 is located on the positive side of the z axis relative to the installation side 123h2 of the second support member 120h2.

[0251] Here, the two installation sides 123h1 and 123h2 are fixed to the bottom surface 253, which is the installation surface. The installation side 123h1 and the bottom surface 253 are joined by a joining material 401.

[0252] For example, the inclined surface 124h1, the installation edge 123h1, and the bottom surface 253 may be joined together by a bonding material 401. The installation edge 123h2 and the bottom surface 253 may be joined together by a bonding material 402. For example, the inclined surface 125h2, the installation edge 123h2, and the bottom surface 253 may be joined together by a bonding material 402.

[0253] The inclined surface 124h1 and the installation side 123h1 may be provided with a metal film for bonding to the bonding material 401. The inclined surface 125h2 and the installation side 123h2 may be provided with a metal film for bonding to the bonding material 402.

[0254] As described above, in this modification, the generating line 115 is also parallel to the xy plane. Furthermore, the bottom surface 253, which is the first reference plane, is inclined with respect to the xy plane. Therefore, the generating line 115 is inclined with respect to the first reference plane (bottom surface 253).

[0255] The angle α between the generatrix 115 and the first reference plane (bottom surface 253) satisfies the following formula.

[0256] 0°<|α|<45°

[0257] Furthermore, the angle α should satisfy the following formula:

[0258] 0.5°≦|α|≦2°

[0259] The alignment step according to this modification is performed in the same manner as in the third modification of the first embodiment.

[0260] That is, the alignment step is a process of moving the lens unit 100h in two mutually perpendicular directions parallel to the first reference plane (bottom surface 253). Here, since the first reference plane (bottom surface 253) is inclined with respect to the xy plane, the lens unit 100h can be moved in the inclined direction and the y-axis direction.

[0261] In this modification, as in the effect shown in embodiment 1, the absolute value of Δz is always smaller than the absolute value of Δx in the position adjustment of lens unit 100h in the alignment step. Therefore, when the position of lens unit 100h in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0262] (Embodiment 2) Hereinafter, a description will be given of embodiment 2. The following description will focus on the differences from embodiment 1, and the description of commonalities will be omitted or simplified.

[0263] FIG. 17 is a front view showing the configuration of a semiconductor laser device 1c according to this embodiment.

[0264] The semiconductor laser device 1c according to this embodiment has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that the lens portion 100 and the fixing member 300 are replaced with a lens portion 100c and a fixing member 300c.

[0265] The fixing member 300c has the same configuration as the fixing member 300, except that it has a first fixing member 310c instead of the first fixing member 310. Also in this embodiment, the fixing member 300c has an installation surface.

[0266] The first fixing member 310c has an upper surface 311c located on the upper side and a lower surface 312 on the lower side. The upper surface 311c corresponds to the installation surface.

[0267] The upper surface 311c, which is the mounting surface, is a cylindrical surface (concave curved surface) concave downward. The upper surface 311c does not have any flat portions and is entirely curved. The upper surface 311c is part of a cylindrical surface (second cylindrical surface) of radius R, with a line passing through point O and parallel to the y-axis direction as its central axis. Here, radius R is the length of OP and the length of OQ. Point P is the point where a line perpendicular to the active layer is drawn from point O toward the upper surface 311c and the upper surface 311c intersects with the vertical line. Point Q is the point where a line perpendicular to the active layer (virtual line VL) is drawn from the center of the light-emitting region 201 toward the upper surface 311c and the upper surface 311c intersects with the vertical line. The virtual line VL is a line parallel to the fast axis direction (i.e., the z-axis direction) of the laser light L1. More specifically, the imaginary line VL indicated by the two-dot chain line is an imaginary line that passes through the light emitting region 201 when viewed from the emission direction of the laser light L1, i.e., when viewed from the front. Here, the imaginary line VL is a line that passes through the center of the light emitting region 201 and is perpendicular to the active layer.

[0268] The lens unit 100c is a member having a cylindrical lens 110 and a support member 120c. The support member 120c has the same configuration as the support member 120, except that it has a lower surface 122c instead of the lower surface 122. In this embodiment, the lower surface 122c corresponds to the installation surface.

[0269] The lower surface 122c is a cylindrical surface (convex curved surface) that protrudes downward. The lower surface 122c is part of a cylindrical surface (first cylindrical surface) of radius R whose central axis is a line that passes through point O and is parallel to the y-axis direction. The lower surface 122c does not have a flat portion, and the entire surface is a curved surface.

[0270] In this embodiment, the lower surface 122c of the support member 120c, which is the installation surface, is fixed to the upper surface 311c, which is the installation surface.

[0271] The curvatures of the cylindrical surfaces corresponding to the lower surface 122c and the upper surface 311c are equal. Therefore, the lower surface 122c and the upper surface 311c are fitted together. In other words, the second cylindrical surface is fitted together with the first cylindrical surface.

[0272] In this embodiment, the center of light emitting region 201 is not located on OP. In other words, the distance L in the x-axis direction between points P and Q is not 0. Furthermore, when angle POQ is defined as angle γ, angle γ satisfies the following formula.

[0273] 0°<|γ|<45°

[0274] In a front view, the tangent line TL is a tangent line at point Q of the installation surface (upper surface 311c) that intersects with the virtual line VL. In this embodiment, the tangent line TL is also a tangent line to the installation surface (lower surface 122c) that intersects with the virtual line VL. The active layer is inclined with respect to the tangent line TL. Here, the angle between the active layer and the tangent line TL is equal to the angle γ.

[0275] Here, Δz and Δx according to this embodiment will be described with reference to FIGS.

[0276] The alignment step is a process of moving the installation surface (lower surface 122c) of the lens unit 100c so that it aligns with the installation surface (upper surface 311c). Here, because the lower surface 122c, which is the installation surface, and the upper surface 311c, which is the installation surface, are part of a cylindrical surface, the lens unit 100c rotates along the installation surface (upper surface 311c). FIG. 17 is a front view showing an example before the lens unit 100c (more specifically, the cylindrical lens 110) is moved by rotation D. FIG. 18 is a front view showing an example after the lens unit 100c (more specifically, the cylindrical lens 110) is moved by rotation D. For simplicity, FIG. 18 mainly illustrates the cylindrical lens 110, the support member 120c, the semiconductor laser element 200, and the first fixing member 310c.

[0277] For example, a case will be described in which the cylindrical lens 110 moves from the position in FIG. 17 to the position in FIG. 18. The amount of movement of the cylindrical lens 110 in the x-axis direction from the position in FIG. 17 to the position in FIG. 18 is Δx, and the rotation angle is angle Δγ. The point on the lower surface 122c that coincided with point Q in the state in FIG. 17 moves to point Q' in FIG. 18. In this case, the position of the generatrix 115 at the center of the light-emitting region 201 moves by Δz in the z-axis direction in a front view. Here, when Δγ<<1 (i.e., when the angle Δλ is much smaller than 1), we can approximate sin Δγ ≒ Δγ and cos Δγ ≒ 1, so we can approximate Δx = RΔγ cos γ and Δz = RΔγ sin γ.

[0278] Therefore, similarly to the first embodiment, when the angle γ satisfies 0°<|γ|<45°, |Δz| / |Δx| is less than 1. In adjusting the position of the lens unit 100c by the rotation D, the absolute value of Δz is always smaller than the absolute value of Δx. Therefore, when the position of the lens unit 100c in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the z-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy.

[0279] In this embodiment, the installation surface is a part of a cylindrical surface having a central axis that is a line that passes through point O and is parallel to the y-axis direction, but the installation surface may also be a part of a surface of rotation having a central axis that is a line that passes through point O and is parallel to the y-axis direction. In this case, the installation surface may be a part of a surface of rotation that fits with the installation surface and has a central axis that is a line that passes through point O and is parallel to the y-axis direction.

[0280] In this embodiment, the installation surface intersects with the OP, but the installation surface may not intersect with the OP. In this case, the virtual point P is located on a virtual cylindrical surface that includes the installation surface.

[0281] (Effects, etc.) The semiconductor laser device 1 according to the first embodiment includes a semiconductor laser element 200 that emits laser light L1, and a lens unit 100 that has a cylindrical lens 110 and an installation surface. The semiconductor laser element 200 has an active layer. The laser light L1 is incident on the cylindrical lens 110, and the cylindrical lens 110 changes the divergence angle of the laser light L1 in the fast axis direction. The installation surface is fixed to the installation surface. A generatrix 115 of the cylindrical lens 110 is inclined with respect to a first reference plane of the installation surface. The angle α between the generatrix 115 and the first reference plane satisfies 0°<|α|<45°.

[0282] As a result, as shown in the first embodiment, when the position of the lens unit 100 (cylindrical lens 110) is adjusted, the absolute value of the movement amount Δz can be made sufficiently small relative to the absolute value of the movement amount Δx. In other words, when the light source module 10 includes the semiconductor laser device 1, the light source module 10 has high coupling efficiency.

[0283] In the first embodiment, the angle α between the generatrix 115 and the first reference plane satisfies 0.5°≦|α|≦2°.

[0284] This allows the position of the lens unit 100 in the z-axis direction to be adjusted more precisely.

[0285] The semiconductor laser device 1 according to the first embodiment includes a semiconductor laser element 200 that emits laser light L1, and a lens unit 100 that has a cylindrical lens 110 and an installation surface. The semiconductor laser element 200 has an active layer. The laser light L1 is incident on the cylindrical lens 110, and the cylindrical lens 110 changes the divergence angle of the laser light L1 in the fast axis direction. The installation surface is fixed to a surface on which the laser light is to be installed. A generatrix 115 of the cylindrical lens 110 is inclined with respect to a second reference plane of the installation surface. The angle β between the generatrix 115 and the second reference plane satisfies 0°<|β|<45°.

[0286] As a result, as shown in the first embodiment, when the position of the lens unit 100 (cylindrical lens 110) is adjusted, the absolute value of the movement amount Δz can be made sufficiently small relative to the absolute value of the movement amount Δx. In other words, when the light source module 10 includes the semiconductor laser device 1, the light source module 10 has high coupling efficiency.

[0287] In the first embodiment, the angle β formed between the generatrix 115 and the second reference plane satisfies 0.5°≦|β|≦2°.

[0288] This allows the position of the lens unit 100 in the z-axis direction to be adjusted more precisely.

[0289] In the first embodiment, the lens unit 100 has a support member 120 that supports the cylindrical lens 110, and the installation surface is provided on the support member 120.

[0290] This allows the installation surface provided on the support member 120 to be fixed to the installation surface.

[0291] In embodiment 1, the semiconductor laser device 1 further includes a fixing member 300 having an installation surface, the installation surface (upper surface 311) having a curved installation surface portion 3113, and the installation surface (lower surface 122) having a curved installation surface portion 1223.

[0292] As a result, when the installation surface is fixed to the installation surface, the installation surface curved surface portion 3113 can be fixed to the installation surface, and the installation surface curved surface portion 1223 can be fixed to the installation surface.

[0293] In the first embodiment, the installation surface (lower surface 122 ) has a curved installation surface portion 1223 .

[0294] This allows the curved installation surface portion 1223 to be fixed to the installation surface when the installation surface is fixed to the installation surface.

[0295] In the first embodiment, the semiconductor laser device 1 includes a fixing member 300 having an installation surface, and the installation surface (upper surface 311 ) has a curved installation surface portion 3113 .

[0296] This allows the curved surface portion 3113 of the fixing member 300 to be fixed to the installation surface when the installation surface is fixed to the installation surface.

[0297] In the first embodiment, the busbar 115 and the active layer are parallel to each other.

[0298] This makes it possible to realize a semiconductor laser device 1 in which the bus bar 115 and the active layer are parallel to each other.

[0299] The semiconductor laser device 1 according to the first embodiment includes a submount 230 having a first upper surface (upper surface 231) and a fixed base 250 having a second upper surface (upper surface 251). The mounting surface (upper surface 311) is disposed below the first upper surface. The submount 230 is disposed above the second upper surface, and the semiconductor laser element 200 is disposed above the first upper surface.

[0300] This makes it possible to realize the semiconductor laser device 1 in which the mounting surface is installed below the first upper surface. Also, it is possible to realize the semiconductor laser device 1 in which the submount 230 is installed above the second upper surface and the semiconductor laser element 200 is installed above the first upper surface.

[0301] The semiconductor laser device 1 according to the first embodiment includes a submount 230 having a first upper surface (upper surface 231), a fixing member 300 having a third upper surface (upper surface 311), and a fixing base 250 having a second upper surface (upper surface 251). The submount 230 and the fixing member 300 are disposed above the second upper surface. The semiconductor laser element 200 is disposed above the first upper surface.

[0302] This makes it possible to realize the semiconductor laser device 1 in which the submount 230 and the fixing member 300 are placed above the second upper surface, and the semiconductor laser element 200 is placed above the first upper surface.

[0303] In the semiconductor laser device 1 according to the first embodiment, the lens unit 100 has a support member 120 on which an installation surface is provided. The support member 120 has a bonding surface to which the cylindrical lens 110 is bonded. The support member 120 is fixed to the installation surface. The cylindrical lens 110 has a lower surface 113 parallel to a generatrix 115, and the bonding surface is parallel to the generatrix 115 and is bonded to the lower surface 113.

[0304] This allows the cylindrical lens 110 and the support member 120 to be joined surface to surface (the lower surface 113 of the cylindrical lens 110) (joint surface (upper surface 121)), making misalignment less likely to occur compared to, for example, when the cylindrical lens 110 and the support member 120 are joined point to point.

[0305] In a semiconductor laser device 1f according to the third modification of the first embodiment, a cylindrical lens 110 has a first side surface 111 and a second side surface 112 that intersect with a generatrix 115. A lens unit 100f has a support member 120f that supports the cylindrical lens 110. An installation surface is provided on the support member 120f. The support member 120f has a first support member 120f1 fixed to the first side surface 111 and a second support member 120f2 fixed to the second side surface 112.

[0306] As a result, the support member 120f can support both the first side surface 111 and the second side surface 112 of the cylindrical lens 110, making it less likely for misalignment to occur compared to, for example, when the support member 120f supports the cylindrical lens 110 on one surface.

[0307] The semiconductor laser device 1f according to the third modification of the first embodiment includes a fixed base 250f having a second upper surface (upper surface 251) and a bottom surface 253 of a recess 252 recessed from the second upper surface. The bottom surface 253 serves as an installation surface.

[0308] In the third modification of the first embodiment, the first reference plane is the bottom surface 253. As a result, as shown in the third modification of the first embodiment, when the position of the lens unit 100f (cylindrical lens 110) is adjusted, the absolute value of the movement amount Δy can be made sufficiently small relative to the absolute value of the movement amount Δx. In other words, when a light source module includes this semiconductor laser device 1f, a light source module with high coupling efficiency is realized.

[0309] The semiconductor laser device 1c according to the second embodiment includes a semiconductor laser element 200 that emits laser light L1, and a lens unit 100c having a cylindrical lens 110 and an installation surface. The semiconductor laser element 200 has an active layer including a light-emitting region 201. The cylindrical lens 110 receives the laser light L1 and changes the divergence angle of the laser light L1 in the fast axis direction. The installation surface is fixed to a mounting surface. The installation surface is a part of a first cylindrical surface, and the mounting surface is a part of a second cylindrical surface that fits into the first cylindrical surface. When viewed from the emission direction of the laser light L1, a tangent line TL to the mounting surface that intersects with a virtual line VL that passes through the light-emitting region 201 and is perpendicular to the active layer is inclined with respect to the active layer. The angle γ between the active layer and the tangent line TL satisfies 0°<|γ|<45°.

[0310] As a result, as shown in embodiment 2, when the position of the lens unit 100c (cylindrical lens 110) is adjusted, the absolute value of the movement amount Δz can be made sufficiently small relative to the absolute value of the movement amount Δx. In other words, when a light source module includes this semiconductor laser device 1c, a light source module with high coupling efficiency is realized.

[0311] A semiconductor laser device 1h according to a fifth modification of the first embodiment includes a semiconductor laser element 200 that emits laser light L1, and a lens unit 100h that has a cylindrical lens 110 and installation sides (installation sides 123h1 and 123h2). The semiconductor laser element 200 has an active layer. The laser light L1 is incident on the cylindrical lens 110, and the lens unit 100h changes the divergence angle of the laser light L1 in the fast axis direction. The installation sides 123h1 and 123h2 are fixed to the installation surface. A generatrix 115 of the cylindrical lens 110 is inclined with respect to a first reference plane of the installation surface. The angle α between the generatrix 115 and the first reference plane satisfies 0°<|α|<45°.

[0312] As a result, as shown in the fifth modification of the first embodiment, when the position of the lens unit 100h (cylindrical lens 110) is adjusted, the absolute value of the movement amount Δz can be made sufficiently small relative to the absolute value of the movement amount Δx. In other words, when a light source module includes the semiconductor laser device 1h, a light source module with high coupling efficiency is realized.

[0313] In the semiconductor laser device 1h according to the fifth modification of the first embodiment, the angle α formed between the generatrix 115 and the first reference plane satisfies 0.5°≦|α|≦2°.

[0314] This allows the position of the lens unit 100h in the z-axis direction to be adjusted more precisely.

[0315] In a semiconductor laser device 1h according to the fifth modification of the first embodiment, a cylindrical lens 110 has a first side surface 111 and a second side surface 112 that intersect with a generatrix 115. The lens unit 100h has a support member 120h that supports the cylindrical lens 110. The installation side is provided on the support member 120h. The support member 120h has a first support member 120h1 fixed to the first side surface 111 and a second support member 120h2 fixed to the second side surface 112.

[0316] As a result, the support member 120h can support both the first side surface 111 and the second side surface 112 of the cylindrical lens 110, making it less likely for misalignment to occur compared to, for example, when the support member 120h supports the cylindrical lens 110 on one surface.

[0317] The semiconductor laser device 1h according to the fifth modification of the first embodiment includes a fixed base 250f having a second upper surface (upper surface 251) and a bottom surface 253 of a recess 252 recessed from the second upper surface. The bottom surface 253 serves as an installation surface.

[0318] In the fifth modification of the first embodiment, the first reference plane is the bottom surface 253. As a result, as shown in the fifth modification of the first embodiment, when the position of the lens unit 100h (cylindrical lens 110) is adjusted, the absolute value of the movement amount Δy can be made sufficiently small relative to the absolute value of the movement amount Δx. In other words, when a light source module includes this semiconductor laser device 1h, a light source module with high coupling efficiency is realized.

[0319] The light source module 10 according to the first embodiment includes a plurality of the semiconductor laser devices described above, and the laser light emitted from the semiconductor laser elements 200 included in each of the plurality of semiconductor laser devices (semiconductor laser devices 1 to 6) is combined.

[0320] The semiconductor laser device 1 is a device with high optical axis accuracy of the laser beam L1, and the semiconductor laser devices 2 to 6 having the same configuration are also devices with high optical axis accuracy of the laser beams L2 to L6. Therefore, the light source module 10 including the semiconductor laser device 1 and the semiconductor laser devices 2 to 6 can collect the multiple laser beams L1 to L6 without spatial overlapping with each other on the lens that collects the laser beams into the optical fiber 550, and is a module with high coupling efficiency.

[0321] The light source module 10 according to the first embodiment includes an airtight package that hermetically seals a plurality of semiconductor laser devices.

[0322] In the first embodiment, the case 501 corresponds to an airtight package, and a plurality of semiconductor laser devices are hermetically sealed in the case 501. For example, if foreign matter such as dirt adheres to the semiconductor laser element 200 and the lens portion 100 of the semiconductor laser device 1, the performance of the emitted laser light L1 may be deteriorated.

[0323] However, with the above configuration, the semiconductor laser element 200 and the lens portion 100 are protected from foreign matter such as dirt, and therefore deterioration in the performance of the emitted laser light L1 is suppressed.

[0324] A manufacturing method of the light source module 10 according to the first embodiment is as follows. The light source module 10 includes a semiconductor laser element 200 that emits laser light L1, an installation surface, and a lens unit 100 that has a cylindrical lens 110 and an installation surface. The semiconductor laser element 200 has an active layer. The cylindrical lens 110 changes the divergence angle of the laser light L1 in the fast axis direction. The installation surface is fixed to the installation surface. The manufacturing method of the light source module 10 according to the first embodiment includes an arrangement step, an alignment step, and a fixing step. In the arrangement step, the lens unit 100 is arranged on the installation surface so that the generatrix 115 of the cylindrical lens 110 is inclined with respect to a first reference plane of the installation surface. In the alignment step, the laser light L1 emitted from the semiconductor laser element 200 is incident on the cylindrical lens 110, and the arranged lens unit 100 is moved in two mutually perpendicular directions parallel to the first reference plane. In the fixing step, the moved lens unit 100 is fixed to the installation surface. In the arranging step, the angle α between the generatrix 115 and the first reference plane satisfies 0°<|α|<45°.

[0325] The semiconductor laser device 1 included in the light source module 10 manufactured by such a manufacturing method can make the absolute value of the movement amount Δz sufficiently small relative to the absolute value of the movement amount Δx when the position of the lens portion 100 (cylindrical lens 110) is adjusted, as shown in Embodiment 1. In other words, such a manufacturing method realizes a light source module 10 with high coupling efficiency.

[0326] (Other Embodiments) While the semiconductor laser device according to the present disclosure has been described above based on the embodiments and modifications thereof, the present disclosure is not limited to these embodiments and modifications thereof. As long as they do not deviate from the gist of the present disclosure, various modifications conceivable by a person skilled in the art to the embodiments and other forms constructed by combining some of the components of the embodiments and modifications thereof are also included in the scope of the present disclosure.

[0327] In the first embodiment, in support member 120, lower surface 122, which is the installation surface, has curved installation surface portion 1223, which is a part of a cylindrical surface, but this is not limited to this. Similarly, in first fixing member 310 of fixing member 300, upper surface 311, which is the installation surface, has curved installation surface portion 3113, which is a part of a cylindrical surface, but this is not limited to this. Here, support member 120d and fixing members according to other embodiments will be described using Figures 19 and 20.

[0328] Fig. 19 is a perspective view showing a support member 120d according to another embodiment. In Fig. 19, as in Fig. 5, the x-axis and z-axis are shown inverted compared to Fig. 2. The installation surface is provided on the support member 120d.

[0329] A support member 120d according to other embodiments has an upper surface 121 and a lower surface 122d. The lower surface 122d corresponds to the installation surface. The lower surface 122d, which is the installation surface, has a first planar portion 1221d, a second planar portion 1222d, and an installation surface protrusion 1223d. The first planar portion 1221d, the second planar portion 1222d, and the installation surface protrusion 1223d are inclined with respect to the xy plane, and the first planar portion 1221d and the second planar portion 1222d are located on the same plane. The installation surface protrusion 1223d is a plane that protrudes downward from the first planar portion 1221d and the second planar portion 1222d. In this manner, the support member 120d does not necessarily have to be provided with the installation surface curved portion 1223. The installation surface protrusion 1223d is not limited to a flat surface. The installation surface protrusion 1223d may have a surface of another shape. The first plane portion 1221d corresponds to the second reference plane.

[0330] 20 is a perspective view showing a first fixing member 310d according to another embodiment. The fixing members according to the other embodiments have a first fixing member 310d.

[0331] The fixing members according to the other embodiments have the same configuration as fixing member 300 according to the embodiment, except that they have first fixing member 310d instead of first fixing member 310. The fixing members according to the other embodiments have an installation surface.

[0332] A first fixing member 310d according to other embodiments has an upper surface 311d and a lower surface 312. The upper surface 311d corresponds to the installation surface. That is, in other embodiments, the first fixing member 310d has the installation surface.

[0333] The upper surface 311d, which is the installation surface, has a first flat surface 3111d, a second flat surface 3112d, and an installation surface protrusion 3113d. The first flat surface 3111d, the second flat surface 3112d, and the installation surface protrusion 3113d are inclined with respect to the xy plane, and the first flat surface 3111d and the second flat surface 3112d are located on the same plane. The installation surface protrusion 3113d is a flat surface that protrudes upward from the first flat surface 3111d and the second flat surface 3112d. In this way, the first fixing member 310d does not necessarily have to be provided with the installation surface curved surface portion 3113. The installation surface protrusion 3113d is not limited to a flat surface. The installation surface protrusion 3113d may have a surface of another shape. Furthermore, the first flat surface 3111d corresponds to the first reference plane.

[0334] The first flat surface portion 1221d, the second flat surface portion 1222d, the installation surface protrusion portion 1223d, the first flat surface portion 3111d, the second flat surface portion 3112d, and the installation surface protrusion portion 3113d are parallel to each other.

[0335] Other embodiments are summarized as follows.

[0336] The semiconductor laser device according to other embodiments further includes a fixing member having a mounting surface, the mounting surface (upper surface 311d) having a mounting surface protrusion 3113d, and the mounting surface (lower surface 122d) having a mounting surface protrusion 1223d.

[0337] As a result, when the installation surface is fixed to the installation target surface, the installation target surface protrusion 3113d can be fixed to the installation surface, and the installation surface protrusion 1223d can be fixed to the installation target surface.

[0338] In other embodiments, the installation surface (lower surface 122d) has an installation surface protrusion 1223d.

[0339] This allows the installation surface protrusion 1223d to be fixed to the installation surface when the installation surface is fixed to the installation surface.

[0340] A semiconductor laser device according to another embodiment includes a fixing member having a mounting surface, and the mounting surface (upper surface 311d) has a mounting surface protrusion 3113d.

[0341] This allows the installation surface protrusion 3113d of the fixing member to be fixed to the installation surface when the installation surface is fixed to the installation surface.

[0342] Furthermore, the above-described embodiments can be modified, substituted, added, omitted, and the like in various ways within the scope of the claims or their equivalents.

[0343] According to the present disclosure, a light source module with high coupling efficiency can be provided.

[0344] DESCRIPTION OF SYMBOLS 1, 1a, 1b, 1c, 1f, 1g, 1h, 2, 3, 4, 5, 6 Semiconductor laser device 10 Light source module 20, 20g Laser unit 100, 100a, 100b, 100c, 100f, 100g, 100h Lens portion 110 Cylindrical lens 111 First side surface 112 Second side surface 113, 122, 122a, 122b, 122c, 122d, 312, 322 Lower surface 114, 121, 231, 251, 311, 311a, 311b, 311c, 311d, 321 Upper surface 115 Generator 116 Emission surface 117 Incident surface 120, 120a, 120b, 120c, 120d, 120f, 120h Support member 120f1, 120h1 First support member 120f2, 120h2 Second support member 121f1 First support flat portion 122f1 First support curved portion 121f2 Second support flat portion 122f2 Second support curved portion 123h1, 123h2 Installation side 124h1, 125h1, 124h2, 125h2 Inclined surface 126h1, 126h2 Region 200 Semiconductor laser element 201 Light-emitting region 210 First electrode 220 Second electrode 230, 230g Submount 231g Front side surface 231gF Central side surface 231gR, 231gL Outer side surfaces 236, 236g Base material 237g Spacer 240 Joining member 250, 250f Fixed base 252 Recess 253 Bottom surface 300, 300a, 300b, 300c Fixed member 310, 310a, 310b, 310c, 310d First fixed member 320 Second fixed member 401, 402 Joining material 501 Case 502 Base 503 Side wall 510 Stepped base 511 First stage 511a First step 511b Second step 512 Second stage 513 Third stage 514 Fourth stage 515 Fifth stage 516 Sixth stage 550 Optical fiber 550a Core 551 Boot 552 Lead pin 600 SAC lens 700 Reflecting mirror 800 Condenser lens 900 Silicon wafer 901 Through hole 902 Metal film 1200f Plate member 1221, 1221a, 1221d First plane part 1222, 1222a, 1222d Second plane part 1223, 1223a Installation surface curved part 1223d Installation surface protrusion part 3111, 3111b, 3111d first plane part3112, 3112b, 3112d Second flat surface portion 3113, 3113b Target surface curved portion 3113d Target surface protruding portion A1 Optical axis d Z-axis direction L1, L2, L3, L4, L5, L6 Reflection angle α Angle β Angle γ Angle

Claims

1. A semiconductor laser device comprising: a semiconductor laser element that emits laser light; and a lens section having a cylindrical lens and a mounting surface, wherein the semiconductor laser element has an active layer; the cylindrical lens receives the laser light and changes the divergence angle of the laser light in the fast axis direction; the mounting surface is fixed to a surface on which the laser light is to be mounted; the generatrix of the cylindrical lens is inclined with respect to a first reference plane of the surface on which the laser light is to be mounted; and the angle α between the generatrix and the first reference plane satisfies 0°<|α|<45°.

2. The semiconductor laser device according to claim 1, wherein the angle α between the generatrix and the first reference plane satisfies 0.5°≦|α|≦2°.

3. A semiconductor laser device comprising: a semiconductor laser element that emits laser light; and a lens section having a cylindrical lens and a mounting surface, wherein the semiconductor laser element has an active layer; the cylindrical lens receives the laser light and changes the divergence angle of the laser light in the fast axis direction; the mounting surface is fixed to a surface to be mounted; the generatrix of the cylindrical lens is inclined with respect to a second reference plane of the mounting surface; and the angle β between the generatrix and the second reference plane satisfies 0°<|β|<45°.

4. The semiconductor laser device according to claim 3, wherein the angle β formed between the generatrix and the second reference plane satisfies 0.5°≦|β|≦2°.

5. The semiconductor laser device according to any one of claims 1 to 4, wherein the lens section has a support member that supports the cylindrical lens, and the installation surface is provided on the support member.

6. The semiconductor laser device according to any one of claims 1 to 4, further comprising a fixing member having the mounting surface, wherein the mounting surface has a curved mounting surface portion, and the mounting surface has a curved mounting surface portion.

7. The semiconductor laser device according to any one of claims 1 to 4, wherein the installation surface has a curved installation surface portion.

8. The semiconductor laser device according to any one of claims 1 to 4, further comprising a fixing member having the mounting surface, the mounting surface having a curved portion.

9. The semiconductor laser device according to any one of claims 1 to 4, further comprising a fixing member having the mounting surface, wherein the mounting surface has a mounting surface protrusion, and the mounting surface has a mounting surface protrusion.

10. The semiconductor laser device according to any one of claims 1 to 4, wherein the mounting surface has a mounting surface protrusion.

11. The semiconductor laser device according to any one of claims 1 to 4, further comprising a fixing member having the mounting surface, the mounting surface having a mounting surface protrusion.

12. The semiconductor laser device according to any one of claims 1 to 4, wherein the busbar and the active layer are parallel to each other.

13. The semiconductor laser device according to any one of claims 1 to 4, comprising: a submount having a first upper surface; and a fixed base having a second upper surface, wherein the mounting surface is disposed below the first upper surface, the submount is disposed above the second upper surface, and the semiconductor laser element is disposed above the first upper surface.

14. The semiconductor laser device according to any one of claims 1 to 4, comprising: a submount having a first upper surface; a fixing member having a third upper surface; and a fixing base having a second upper surface, wherein the submount and the fixing member are placed above the second upper surface, and the semiconductor laser element is placed above the first upper surface.

15. A semiconductor laser device according to any one of claims 1 to 4, wherein the lens portion has a support member on which the installation surface is provided, the support member has a bonding surface to which the cylindrical lens is bonded, the support member is fixed to the installation surface, the cylindrical lens has a lower surface parallel to the generatrix, and the bonding surface is parallel to the generatrix and is bonded to the lower surface.

16. A semiconductor laser device as described in claim 1 or 2, wherein the cylindrical lens has a first side surface and a second side surface that intersect with the generating line, the lens portion has a support member that supports the cylindrical lens, the installation surface is provided on the support member, and the support member has a first support member fixed to the first side surface and a second support member fixed to the second side surface.

17. The semiconductor laser device according to claim 16, further comprising a fixed base having a second upper surface and a bottom surface of a recess recessed from said second upper surface, said bottom surface being said mounting surface.

18. A semiconductor laser device comprising: a semiconductor laser element that emits laser light; and a lens unit having a cylindrical lens and a mounting surface, wherein the semiconductor laser element has an active layer including a light-emitting region; the cylindrical lens receives the laser light and changes the divergence angle of the laser light in the fast axis direction; the mounting surface is fixed to a mounting surface, the mounting surface being a part of a first cylindrical surface, and the mounting surface being a part of a second cylindrical surface that fits into the first cylindrical surface; when viewed from the emission direction of the laser light, a tangent to the mounting surface that intersects with a virtual line that passes through the light-emitting region and is perpendicular to the active layer is inclined with respect to the active layer; and an angle γ between the active layer and the tangent satisfies 0°<|γ|<45°.

19. A semiconductor laser device comprising: a semiconductor laser element that emits laser light; and a lens portion having a cylindrical lens and an installation side, wherein the semiconductor laser element has an active layer; the cylindrical lens receives the laser light and changes the divergence angle of the laser light in the fast axis direction; the installation side is fixed to a surface on which the laser light is to be placed; a generatrix of the cylindrical lens is inclined with respect to a first reference plane of the surface on which the laser light is to be placed; and an angle α between the generatrix and the first reference plane satisfies 0°<|α|<45°.

20. The semiconductor laser device according to claim 19, wherein the angle α between the generatrix and the first reference plane satisfies 0.5°≦|α|≦2°.

21. A semiconductor laser device as described in claim 19 or 20, wherein the cylindrical lens has a first side surface and a second side surface that intersect with the generating line, the lens portion has a support member that supports the cylindrical lens, the installation side is provided on the support member, and the support member has a first support member fixed to the first side surface and a second support member fixed to the second side surface.

22. The semiconductor laser device according to claim 21, further comprising a fixed base having a second upper surface and a bottom surface of a recess recessed from said second upper surface, said bottom surface being said mounting surface.

23. A light source module comprising a plurality of semiconductor laser devices according to any one of claims 1 to 22, wherein the laser light emitted from the semiconductor laser elements of each of the plurality of semiconductor laser devices is multiplexed.

24. The light source module according to claim 23, comprising an airtight package that hermetically seals a plurality of said semiconductor laser devices.

25. A method for manufacturing a light source module, the light source module comprising: a semiconductor laser element that emits laser light; an installation surface; and a lens unit having a cylindrical lens and an installation surface, wherein the semiconductor laser element has an active layer, and the cylindrical lens changes the divergence angle of the laser light in the fast axis direction, and the installation surface is fixed to the installation surface, the manufacturing method comprising: an arrangement step of arranging the lens unit on the installation surface so that a generatrix of the cylindrical lens is inclined with respect to a first reference plane of the installation surface; an alignment step of making the laser light emitted from the semiconductor laser element incident on the cylindrical lens and moving the arranged lens unit in two directions parallel to the first reference plane and perpendicular to each other; and a fixing step of fixing the moved lens unit to the installation surface, wherein in the arrangement step, an angle α formed by the generatrix and the first reference plane satisfies 0°<|α|< 45°.

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