Substrate and manufacturing method therefor, integrated passive device, and electronic apparatus

Abstract

The present disclosure relates to the technical field of semiconductors, and provides a substrate and a manufacturing method therefor, an integrated passive device, and an electronic apparatus. The substrate comprises a base; the surface of the base is provided with a via hole structure; the base comprises a doped region surrounding at least part of the via hole structure; and the doped region is a base part containing dopant ions. Embodiments of the present disclosure can realize via hole structures having a higher aspect ratio.

Description

Substrate, preparation method thereof, integrated passive device, and electronic device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese Patent Application No. 202410831909.5, filed on June 25, 2024, the contents of which are incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] Embodiments of the present disclosure relate to the technical field of semiconductor technology, and in particular to a substrate, a preparation method thereof, an integrated passive device, and an electronic device. BACKGROUND

[0004] Many semiconductor devices use metallized vias to transmit signals, such as printed circuit boards (PCB), package substrates, interposers, micro-electro-mechanical-system (MEMS) devices, etc. The substrate material of the metal via affects the electrical, mechanical, thermal, and other properties of the device. Silicon, polymers, ceramics, and other materials are widely used as substrate materials for preparing metal vias in semiconductor devices. In recent years, with the development of glass processing technology, glass has also been gradually applied as a substrate material for preparing metallized vias in semiconductor devices. Due to its low high-frequency loss, similar thermal expansion coefficient to silicon, and low cost, glass has been widely used in packaging assemblies, radio frequency devices, and other fields. SUMMARY

[0005] Embodiments of the present disclosure provide a substrate, a preparation method thereof, an integrated passive device, and an electronic device, which can realize a higher aspect ratio via structure.

[0006] To solve the above technical problems, embodiments of the present disclosure provide the following technical solutions:

[0007] In one aspect, a substrate is provided, comprising:

[0008] A substrate having a surface provided with a via structure, the substrate comprising a doped region surrounding at least part of the via structure, the doped region being a substrate containing doped ions.

[0009] In some embodiments, the angle between the sidewall of the blind hole and the first direction is 0.5-10°, and the first direction is perpendicular to the substrate.

[0010] In some embodiments, the doping concentration of the doped region gradually decreases in a direction away from the surface.

[0011] In some embodiments, the via structure comprises a first hole and a second hole, the first hole extends from a first surface of the substrate to an interior of the substrate, a hole diameter of the first hole gradually decreases in a direction away from the first surface, the second hole extends from a second surface of the substrate to the interior of the substrate, a hole diameter of the second hole gradually decreases in a direction away from the second surface, the first hole and the second hole are connected to form the via structure, and the first surface and the second surface are two opposite surfaces of the substrate.

[0012] In some embodiments, an aspect ratio of the via structure is greater than or equal to a first value, and the first value is 10:1-40:1.

[0013] In some embodiments, the via structure extends from a first surface of the substrate to a second surface of the substrate, a hole diameter of the via structure gradually decreases in a direction away from the first surface, and the first surface and the second surface are two opposite surfaces of the substrate.

[0014] In some embodiments, an aspect ratio of the via structure is greater than or equal to a second value, and the second value is 5:1-20:1.

[0015] In some embodiments, a roughness of an inner wall of the via structure is 0.2-2 nm.

[0016] In some embodiments, a ratio of a minimum hole diameter to a maximum hole diameter of the via structure is greater than or equal to 0.6.

[0017] Embodiments of the present disclosure also provide an integrated passive device comprising the substrate as described above.

[0018] Embodiments of the present disclosure also provide an electronic device comprising the substrate as described above.

[0019] Embodiments of the present disclosure also provide a method for manufacturing a substrate, comprising:

[0020] providing a substrate;

[0021] forming a mask pattern on a surface of the substrate;

[0022] performing ion doping on the substrate not covered by the mask pattern to form a doped region;

[0023] removing the mask pattern, performing laser modification on a first region to be formed with a via structure, and a projection of the first region on the surface is located within a projection of the doped region on the surface;

[0024] performing wet etching on the substrate to form the via structure.

[0025] In some embodiments, the wet etching of the substrate comprises:

[0026] the wet etching of the substrate is performed using a hydrofluoric acid solution; or

[0027] the wet etching of the substrate is performed using an alkaline solution in an environment with a temperature greater than a preset temperature.

[0028] In some embodiments, the method specifically comprises:

[0029] forming a mask pattern on a first surface and a second surface of the substrate, the first surface and the second surface being opposite surfaces;

[0030] performing ion doping on the substrate not covered by the mask pattern from the first surface and the second surface respectively to form a doped region;

[0031] removing the mask pattern, and performing laser modification on a first region to be formed with a via structure from the first surface and the second surface respectively, a projection of the first region on the first surface being located within a projection of the doped region on the first surface;

[0032] performing wet etching on the substrate from the first surface and the second surface respectively to form the via structure on the first surface and the second surface respectively.

[0033] In some embodiments, the method specifically comprises:

[0034] forming a mask pattern on a first surface of the substrate, the first surface being one surface of the substrate;

[0035] performing ion doping on the substrate not covered by the mask pattern from the first surface to form a doped region;

[0036] removing the mask pattern, and performing laser modification on a first region to be formed with a via structure from the first surface, a projection of the first region on the surface being located within a projection of the doped region on the surface;

[0037] performing wet etching on the substrate from the first surface to form the via structure on the first surface;

[0038] thinning the substrate from a second surface of the substrate until the via structure is exposed, the second surface being an opposite surface of the first surface.

[0039] Embodiments of the present disclosure have the following beneficial effects:

[0040] In the above scheme, the substrate region where the via structure is to be formed is ion doped in advance, the ions entering the substrate interior generate compressive stress, which can make the substrate have better toughness. The first region where the via structure is to be formed is laser modified, so that the first region has a better etching selectivity. The substrate is subjected to wet etching, and the via structure is formed in the first region. Since the substrate around the via structure has better toughness, a via structure with a high aspect ratio can be realized. The anti-damage capability of the via structure is improved by the doped ions remaining on the inner wall of the via structure, the roughness of the inner wall of the via structure is reduced, and the connection reliability of the connecting electrode in the via structure is improved. In addition, since a via structure with a high aspect ratio can be realized, the distance between adjacent via structures can be reduced, the density of the via structure is improved, and a more delicate component can be manufactured. BRIEF DESCRIPTION OF DRAWINGS

[0041] FIG. 1 is a schematic diagram of laser modification of a glass carrier plate in the prior art;

[0042] FIG. 2 is a schematic diagram of a TGV structure formed in the prior art;

[0043] FIGS. 3-6 are schematic diagrams of manufacturing a via structure in an embodiment of the present disclosure;

[0044] FIG. 7 is a schematic diagram of forming a connecting electrode in a via structure in an embodiment of the present disclosure;

[0045] FIG. 8 is a schematic diagram of a via structure being a blind hole in an embodiment of the present disclosure;

[0046] FIG. 9 is a schematic diagram of a doped region surrounding only part of a via structure in an embodiment of the present disclosure;

[0047] FIG. 10 is a schematic diagram of forming blind holes on both side surfaces of a substrate in an embodiment of the present disclosure;

[0048] FIG. 11 is a schematic diagram of forming a through hole on a substrate in an embodiment of the present disclosure.

[0049] 1 glass carrier plate 2 TGV structure 01 substrate 011 first surface 012 second surface 02 mask pattern 03 doped region 04 via structure 041 first hole 042 second hole 05 connecting electrode 06 trace 07 insulating layer 08 blind hole DETAILED DESCRIPTION

[0050] Embodiments of the present disclosure will be described in detail below with reference to the drawings. The embodiments can be implemented in various forms. It should be readily understood by those skilled in the art that the embodiments and features thereof can be varied in various ways without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure should not be construed as being limited only to the embodiments described below. The embodiments in the present disclosure and the features in the embodiments can be arbitrarily combined with each other without conflict. In order to keep the following description of the embodiments of the present disclosure clear and concise, detailed description of some known functions and known components will be omitted. The drawings of the embodiments of the present disclosure only involve structures related to the embodiments of the present disclosure, and other structures can be referred to the general design.

[0051] The scale of the drawings in the present disclosure can be used as a reference in the actual process, but is not limited thereto. For example, the thickness and interval of each film layer, the width and interval of each signal line, etc. can be adjusted according to the actual situation. The drawings described in the present disclosure are only schematic structural diagrams, and one embodiment of the present disclosure is not limited to the shapes or values shown in the drawings.

[0052] In the present specification, ordinal numbers such as "first", "second", and "third" are set in order to avoid confusion of components, and are not intended to be limiting in number.

[0053] In the present specification, in order to facilitate the description and simplify the description, words indicating the orientation or positional relationship such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are used to describe the positional relationship of the components with reference to the drawings, and are not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present disclosure. The positional relationship of the components is appropriately changed according to the direction of each component. Therefore, it is not limited to the words described in the specification, and can be appropriately changed according to the situation.

[0054] In the present specification, unless explicitly defined and limited otherwise, the terms "mount", "connected", "connection" should be interpreted broadly. For example, it can be fixedly connected, or detachably connected, or integrally connected; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate, or the communication between two elements. Those skilled in the art can understand the specific meaning of the above terms in the present disclosure according to the specific situation.

[0055] In this specification, "electrically connected" includes the case where elements are connected through an element having some electrical action. The element having some electrical action is not particularly limited as long as it can transmit and receive an electrical signal between the elements to be connected. Examples of the element having some electrical action include not only an electrode and a wiring but also a switching element such as a transistor, a resistor, an inductor, a capacitor, another element having one or more functions, and the like.

[0056] In this specification, "parallel" means a state where the angle formed by two straight lines is greater than or equal to -10° and less than or equal to 10°, and thus can include a state where the angle is greater than or equal to -5° and less than or equal to 5°. In addition, "perpendicular" means a state where the angle formed by two straight lines is greater than or equal to 80° and less than or equal to 100°, and thus can include a state where the angle is greater than or equal to 85° and less than or equal to 95°.

[0057] In this specification, "film" and "layer" can be interchanged with each other. For example, "a conductive layer" can be replaced with "a conductive film". Similarly, "an insulating film" can be replaced with "an insulating layer".

[0058] In this specification, a triangle, a rectangle, a trapezoid, a pentagon, or a hexagon is not necessarily a strict one, can be an approximate triangle, rectangle, trapezoid, pentagon, or hexagon, and can have some small deformation, a rounded corner, an arc side, or the like due to a tolerance.

[0059] In this specification, "about" means not strict limitation of a boundary and allows a value within a range of a process and a measurement error.

[0060] In this specification, "thickness" is a dimension of a film layer in a direction perpendicular to a substrate.

[0061] In a semiconductor device, a substrate of a plurality of different materials for preparing a metal via, a processing method of a fine via generally uses chemical etching processing, mechanical processing, and laser processing, and a via on a silicon material substrate is generally processed by a Deep Reactive Ion Etching (DRIE) process, which can process a via with a minimum diameter of about 10 μm and a maximum aspect ratio of 25:1. For a polymer and a ceramic substrate, a via is generally prepared by mechanical processing and laser processing, the mechanical processing can use a high-precision drill bit to prepare a via with a diameter greater than 100 μm, and the laser processing can prepare a via with a diameter greater than 30 μm. For a glass substrate, a via with a diameter greater than 10 μm can be prepared by a process combining laser modification and wet etching. It is not difficult to find that among various substrates, a via prepared by using a glass substrate can be more fine.

[0062] In the process of preparing a via hole using a glass substrate, a glass through hole (English full name: Through Glass Via, abbreviated as TGV) can be prepared on the surface of the substrate. After filling the hole with metal, a surface film layer is prepared.

[0063] The preparation process of forming a via hole on a substrate, filling metal in the via hole, and forming a surface film layer on the surface of the substrate will be described below. The "patterning process" in the present disclosure includes coating photoresist, mask exposure, development, etching, stripping photoresist, etc. for metal materials, inorganic materials or light-transmitting conductive materials. For organic materials, it includes coating organic materials, mask exposure and development, etc. Deposition can use any one or more of sputtering, evaporation, chemical vapor deposition, coating can use any one or more of spraying, spin coating and inkjet printing, etching can use any one or more of dry etching and wet etching, which is not limited by the present disclosure.

[0064] "Thin film" refers to a thin film of a certain material on a substrate made by deposition, coating or other processes: if the "thin film" does not need to be patterned during the entire process, the "thin film" can also be called "layer"; if the "thin film" needs to be patterned during the entire process, it is called "thin film" before patterning, and "layer" after patterning.

[0065] The "layer" after the patterning process contains at least one "pattern". The "A and B are arranged in the same layer" in the present disclosure means that A and B are formed at the same time by the same patterning process, and the "thickness" of the film layer is the size of the film layer in the direction perpendicular to the display substrate. In the example embodiment of the present disclosure, "the orthographic projection of B is within the orthographic projection of A" or "the orthographic projection of A contains the orthographic projection of B" means that the boundary of the orthographic projection of B falls within the boundary of the orthographic projection of A, or the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.

[0066] Glass has been widely used in packaging components, radio frequency devices and other fields due to its low high-frequency loss, low thermal expansion coefficient similar to silicon material, low cost and other characteristics. The existing TGV manufacturing method is to pre-modify the glass carrier plate 1 on the full thickness by laser, as shown in FIG. 1; then etch to form a TGV structure 2 with a through hole, as shown in FIG. 2. However, due to the material quality of the glass, the included angle α between the sidewall of the TGV structure 2 and the vertical direction is more than 5°, the aspect ratio of the TGV structure 2 is small, generally less than 20:1, which leads to a large size of the TGV structure 2, a maximum aperture of the TGV structure 2 is about 100 μm, a small density of the TGV structure 2, a spacing between adjacent TGV structures 2 is about 100 μm, and the glass carrier plate 1 cannot be used to manufacture fine components.

[0067] The embodiments of the present disclosure provide a substrate, a preparation method thereof, an integrated passive device and an electronic device, and a via structure with a higher aspect ratio can be realized.

[0068] The embodiments of the present disclosure provide a method for manufacturing a substrate, comprising:

[0069] providing a substrate;

[0070] forming a mask pattern on a surface of the substrate;

[0071] performing ion doping on the substrate not covered by the mask pattern to form a doped region;

[0072] removing the mask pattern and performing laser modification on a first region to be formed with a via structure, wherein a projection of the first region on the surface is located within a projection of the doped region on the surface;

[0073] performing wet etching on the substrate to form the via structure.

[0074] In the embodiments of the present disclosure, the via structure can be formed on one side surface of the substrate, or the via structure can be formed on both side surfaces of the substrate.

[0075] In some embodiments, when the via structure is formed on both side surfaces of the substrate, the method specifically comprises:

[0076] forming a mask pattern on a first surface and a second surface of the substrate, wherein the first surface and the second surface are opposite surfaces;

[0077] performing ion doping on the substrate not covered by the mask pattern from the first surface and the second surface respectively to form a doped region;

[0078] removing the mask pattern and performing laser modification on a first region to be formed with a via structure from the first surface and the second surface respectively, wherein a projection of the first region on the first surface is located within a projection of the doped region on the first surface;

[0079] performing wet etching on the substrate from the first surface and the second surface respectively to form the via structure on the first surface and the second surface respectively.

[0080] The via structures on the two side surfaces of the substrate can not be connected, so that blind holes are formed on the two side surfaces of the substrate respectively; or the via structures on the two side surfaces of the substrate can be connected, so that a through hole penetrating through the substrate is formed.

[0081] In some embodiments, when the via structure is formed on one side surface of the substrate, the method comprises:

[0082] forming a mask pattern on a first surface of the substrate, the first surface being one surface of the substrate;

[0083] ion-doping the substrate not covered by the mask pattern from the first surface to form a doped region;

[0084] removing the mask pattern, laser-modifying a first region to be formed with a via structure from the first surface, a projection of the first region on the surface being located within a projection of the doped region on the surface;

[0085] wet-etching the substrate from the first surface to form the via structure on the first surface.

[0086] In the embodiment, the via structure formed is a blind hole. If a via hole is needed, the substrate can be thinned from a second surface of the substrate until the via structure is exposed, thereby forming a via hole penetrating through the substrate, wherein the second surface is a surface opposite to the first surface.

[0087] In one embodiment, as shown in FIGS. 3-6, the manufacturing method of the embodiment includes the following steps:

[0088] Step 1, providing a substrate 01, the substrate 01 including a first surface 011 and a second surface 012 arranged oppositely;

[0089] In the embodiment, the substrate 01 can be glass, silicon, polymer, ceramic, etc. Glass has been widely used in packaging assemblies, radio frequency devices, etc. due to its low high-frequency loss, similar coefficient of thermal expansion to silicon, low cost, etc. Therefore, the substrate 01 can be glass, and the glass used is usually glass with simple composition such as aluminosilicate glass or silica glass.

[0090] Step 2, forming a mask pattern 02 on the first surface 011 and / or the second surface 012 of the substrate 01;

[0091] As shown in FIG. 3, the mask pattern 02 can be formed on the first surface 011 of the substrate 01, or on the second surface 012 of the substrate 01, or on both the first surface 011 and the second surface 012 of the substrate 01. The mask pattern 02 covers the region that does not need to be ion-doped. The mask pattern 02 can be photoresist, or metal pattern, metal oxide pattern, etc. The critical dimension of the mask pattern 02 can be 1 μm-1000 μm. When the mask pattern 02 is circular, the critical dimension of the mask pattern is the radius of the mask pattern. When the mask pattern is rectangular, the critical dimension of the mask pattern is the length or width of the mask pattern.

[0092] The mask pattern 02 defines a plurality of doped regions, the orthogonal projection of the doped regions on the first surface 011 can be circular, square, rectangular, triangular, regular polygon or irregular polygon.

[0093] Step 3, ion doping is performed on the substrate 01 which is not covered by the mask pattern 02 to form doped regions 03;

[0094] As shown in FIG. 4, ion doping is performed on the substrate 01 which is not covered by the mask pattern 02, wherein the ion doping also includes ion implantation, and the doping ions are selected from at least one of Na ions, K ions, Li ions, Ca ions, Sr ions and Ba ions. Doping the substrate with these ions can make the substrate 01 have better toughness, so that a via structure with high aspect ratio can be realized; and can also effectively improve the damage resistance of the via structure and reduce the roughness of the inner wall of the via structure.

[0095] The ion doping can be performed from the first surface 011 to the inside of the substrate 01 to form a first doped sub-region; the ion doping can also be performed from the second surface 012 to the inside of the substrate 01 to form a second doped sub-region; the ion doping can also be performed from the first surface 011 and the second surface 012 to the inside of the substrate 01 to form the first doped sub-region and the second doped sub-region, and the depths of the first doped sub-region and the second doped sub-region are both less than the thickness of the substrate.

[0096] The area of the region subjected to ion doping is consistent with the critical dimension area of the mask pattern 02, and when the orthogonal projection of the doped region on the first surface 011 is circular, the diameter of the orthogonal projection can be 1 μm to 1000 μm, and the depth of the doped region can be 1 μm to 300 μm.

[0097] When the ion doping is performed from the first surface 011 to the inside of the substrate 01, the doping concentration gradually decreases in the direction away from the first surface 011, and can decrease from 10 19 / cm 3 to 0. For example, when the depth of the doped region is 300 μm, the doping concentration of the surface layer of the doped region is 10 19 / cm 3 , and the doping concentration at the position of 300 μm deep is 0.

[0098] When the ion doping is performed from the second surface 012 to the inside of the substrate 01, the doping concentration gradually decreases in the direction away from the second surface 012, and can decrease from 10 19 / cm 3 to 0. For example, when the depth of the doped region is 300 μm, the doping concentration of the surface layer of the doped region is 10 19 / cm 3 At the position of 300 μm deep, the doping concentration is 0.

[0099] This is because the stress at the aperture of the substrate surface is greater during the hole making process, and the doping concentration of the substrate surface is large, which can inhibit the phenomenon that the through hole structure of the substrate surface is more prone to cracking.

[0100] The first dopant region and the second dopant region can be in communication, as shown in FIG. 4, the first dopant region and the second dopant region in communication constitute the entire doping region 03. The depth of the first dopant region can be equal to the depth of the second dopant region, or can not be equal. Of course, the first dopant region and the second dopant region can also not be in communication.

[0101] If only ion doping is performed from the first surface 011 to the inside of the substrate 01 or only ion doping is performed from the second surface 012 to the inside of the substrate 01, the thickness of the doping region (i.e. the depth of the doping region) is less than the thickness of the substrate 01, and the doping concentration of the doping region gradually decreases in the direction away from the surface of the substrate.

[0102] Step 4, removing the mask pattern, laser modifying the first region to be formed with a through hole structure, the orthographic projection of the first region on the first surface is located within the orthographic projection of the doping region on the first surface;

[0103] As shown in FIG. 5, the substrate 01 after ion doping is removed from the mask pattern 02, and the first region to be formed with a through hole structure is laser modified. The depth of laser modification can be determined by the thickness of the substrate 01, and the depth of laser modification can be 100-1000 μm. Laser modification can change the etching selectivity of the substrate 01, and the substrate 01 after laser modification can be removed by wet etching. When a through hole penetrating the substrate is needed, the depth of laser modification is the thickness of the substrate; when a blind hole is needed, the depth of laser modification is less than the thickness of the substrate.

[0104] Wherein, the orthographic projection of the first region to be formed with a through hole structure on the first surface 011 is located within the orthographic projection of the doping region 03 on the first surface 011, and the orthographic projection of the first region on the first surface 011 can coincide with the orthographic projection of the doping region 03 on the first surface 011, or there is a certain distance between the boundary of the orthographic projection of the first region on the first surface 011 and the boundary of the orthographic projection of the doping region 03 on the first surface 011.

[0105] Step 5, wet etching the substrate 01 to form a through hole structure;

[0106] In the embodiment, the via structure can be formed by wet etching the substrate with a hydrofluoric acid solution, or by wet etching the substrate with an alkaline solution in an environment with a temperature greater than a preset temperature, which can be 100-200 degrees Celsius. The region modified by the laser can be removed by wet etching to form the via structure.

[0107] When the first dopant region and the second dopant region formed by ion doping from the first surface 011 and the second surface 012 into the substrate 01 are connected to form a whole dopant region, and the substrate is modified by a laser in the whole thickness, the via structure 04 shown in FIG. 6 can be formed after etching the substrate. The via structure 04 includes a first hole 041 extending from the first surface 011 into the substrate 01, and the aperture of the first hole 041 gradually decreases in a direction away from the first surface 011; and a second hole 042 extending from the second surface 012 into the substrate 01, and the aperture of the second hole 042 gradually decreases in a direction away from the second surface 012. As shown in FIG. 10, the first hole 041 and the second hole 042 can not be connected, so that blind holes are formed on the two side surfaces of the substrate, and the central axes of the two blind holes can not coincide; or, as shown in FIG. 6, the first hole 041 and the second hole 042 can be connected to form a through hole penetrating the substrate, and the dopant region 03 surrounds the via structure 04.

[0108] The ion of the dopant region 03 generates compressive stress, which can make the substrate 01 have better toughness, and can realize the via structure 04 with a high aspect ratio. When the thickness of the substrate 01 is 50-500 μm, the aspect ratio of the via structure 04 can reach 30:1, and the angle β between the sidewall of the via structure 04 and the vertical direction is 0.5-10°, preferably 0.5-1°. The ion doping can also improve the damage resistance of the via structure 04, and reduce the roughness of the inner wall of the via structure 04, which can be 0.2-2 nm. Thus, when a connecting electrode is formed in the via structure 04, the connection reliability of the connecting electrode can be improved. In addition, the via structure 04 with a high aspect ratio and the compressive stress around the via structure changed by ion doping can improve the compressive resistance of the via structure, reduce the distance between adjacent via structures 04, and make the distance D between adjacent via structures 04 reduced to 15 μm. Thus, the density of the via structure 04 can be improved, and more delicate components can be made. The distance D between adjacent via structures 04 can be the distance between the central axes of adjacent via structures.

[0109] In the embodiment, the width of the doped region 03 surrounding the via structure 04 in the horizontal direction (parallel to the substrate 01) can be 1 nm to 1000 μm. The width of the doped region 03 is determined by the difference between the critical dimension of the doped region and the critical dimension of the via structure. The width of the doped region gradually increases in the direction away from the surface of the substrate. The angle between the sidewall of the doped region and the vertical direction (perpendicular to the substrate 01) can be 0.5 to 4°.

[0110] Step 6: forming a connection electrode in the via structure.

[0111] As shown in FIG. 7, a copper filling process is performed in the via structure 04 to form a connection electrode 05. Then, a re-distribution layer (RDL) process can be performed on the first surface and the second surface to form a metal trace 06 connected to the connection electrode 05 and an insulating layer 07 covering the metal trace 06. The insulating layer 07 includes an opening exposing the metal trace 06, and the metal trace 06 can be connected to an external component through the opening. The component can be a passive component such as a capacitor or an inductor. Alternatively, the metal trace 06 can be a part of a device without a component, and the via structure 04 is directly connected to the component. The component can be a passive component such as a capacitor or an inductor.

[0112] The via structure of the embodiment can be a via hole as shown in FIG. 6, or a blind hole 08 as shown in FIG. 8. When forming the blind hole 08, ion doping can be performed only from the first surface to the inside of the substrate 01 to form a doped region. The depth of the doped region is less than the depth of the substrate 01. When performing laser modification, laser modification is performed only from the first surface to the substrate. The depth of the laser modification is less than the depth of the doped region. Then, the substrate is etched to form the blind hole 08. The doped region surrounds the sidewall and the bottom of the blind hole 08.

[0113] The aperture of the blind hole 08 can be 3 μm to 1000 μm, and the depth can be 50 μm to 400 μm. The angle between the sidewall of the blind hole 08 and the vertical direction can be 0.5 to 10°, and preferably 0.5 to 1°. The roughness of the inner wall can be 0.2 to 2 nm. The width of the doped region 03 surrounding the via structure 04 in the horizontal direction (parallel to the substrate 01) can be 1 nm to 1000 μm. The width of the doped region 03 is determined by the difference between the critical dimension of the doped region and the critical dimension of the blind hole 08. The width of the doped region gradually increases in the direction away from the surface of the substrate. The angle between the sidewall of the doped region and the vertical direction (perpendicular to the substrate 01) can be 0.5 to 4°.

[0114] The ion doping region 03 generates compressive stress, which can make the substrate 01 have better toughness, and can realize a high-aspect-ratio via structure 04. When the depth of the substrate 01 is 50 μm to 500 μm, the aspect ratio of the blind via 08 can reach 20:1. In addition, since the high-aspect-ratio blind via 08 can be realized, and the compressive stress around the blind via 08 is changed by ion doping to improve the compressive resistance of the blind via 08, the spacing between adjacent blind vias 08 can be reduced to 15 μm, so that the density of the blind via 08 can be improved, and a more fine component can be manufactured. The spacing between adjacent blind vias 08 can be the distance between the center axes of adjacent blind vias 08.

[0115] In some embodiments, after the blind via 08 shown in FIG. 8 is prepared, the substrate can be thinned from the other surface of the substrate until the blind via 08 is exposed, forming a structure as shown in FIG. 11. In this way, a through hole can be obtained, that is, a via structure 04 extending through the substrate 01 on both sides of the substrate 01, the via structure 04 extending from a first surface of the substrate to a second surface of the substrate, and the aperture of the via structure gradually decreasing in a direction away from the first surface. The first surface and the second surface are two opposite surfaces of the substrate. When the thickness of the substrate 01 is 50 μm to 500 μm, the aspect ratio of the via structure 04 can be greater than or equal to a second value, which can be 5:1 to 20:1, and preferably 18:1 to 20:1.

[0116] In some embodiments, the via structure 04 can also be a through hole as shown in FIG. 9. During the formation of the via structure 04, ion doping is only performed from the first surface to the inside of the substrate 01 to form a doping region, and the depth of the doping region is less than the depth of the substrate 01. During the laser modification, the depth of the laser modification is equal to the thickness of the substrate. Then, the substrate is etched to form a first hole 041 and a second hole 042, and the first hole 041 and the second hole 042 are connected to form the via structure 04. The doping region 03 only surrounds the first hole 041 and does not surround the second hole 042. The aspect ratio of the first hole 041 is greater than that of the second hole 042. The angle between the sidewall of the first hole 041 and the vertical direction can be 0.5° to 10°, and preferably 0.5° to 1°. The angle between the sidewall of the second hole 042 and the vertical direction can be 4° to 10°. The aperture of the via structure 04 can be 3 μm to 1000 μm, and the thickness of the substrate 01 can be 50 μm to 500 μm.

[0117] The present embodiment can prepare via structures with different aspect ratios to meet different device requirements. Specifically, when a via structure with a higher aspect ratio is needed, ion doping and glass modification are performed on the region where the via structure is to be formed; when a via structure with a lower aspect ratio is needed, ion doping is not performed on the region where the via structure is to be formed.

[0118] In the embodiment, in order to improve the damage resistance of the via structure, the doped region preferably surrounds the via structure, and when the via structure is a blind hole, the doped structure surrounds the sidewall and bottom of the blind hole; and when the via structure is a through hole penetrating the substrate, the doped structure surrounds the sidewall of the via structure.

[0119] In the embodiment, the substrate region where the via structure is to be formed is pre-ion doped, the ions entering the interior of the substrate generate compressive stress, which can make the substrate have better toughness. The first region where the via structure is to be formed is laser modified, so that the first region has a better etching selectivity. The substrate is wet etched, and the via structure is formed in the first region. Since the substrate around the via structure has better toughness, a via structure with high aspect ratio can be realized. The doped ions remaining in the inner wall of the via structure can improve the damage resistance of the via structure, reduce the roughness of the inner wall of the via structure, and further improve the connection reliability of the connecting electrode in the via structure. In addition, since the via structure with high aspect ratio can be realized, the spacing between adjacent via structures can be reduced, the density of the via structure can be improved, and a more delicate component can be manufactured.

[0120] The disclosure also provides a substrate, as shown in FIGS. 6 and 7, comprising:

[0121] A substrate 01, the substrate comprising a first surface 011 and a second surface 012 arranged oppositely;

[0122] The substrate 01 is provided with a via structure 04, and the via structure 04 is provided with a connecting electrode 05.

[0123] The substrate 01 further comprises a doped region 03 surrounding at least part of the via structure 04, and the doped region 03 is a substrate containing doped ions.

[0124] In the embodiment, the substrate region where the via structure is to be formed is pre-ion doped, the ions entering the interior of the substrate generate compressive stress, which can make the substrate have better toughness. The first region where the via structure is to be formed is laser modified, so that the first region has a better etching selectivity. The substrate is wet etched, and the via structure is formed in the first region. Since the substrate around the via structure has better toughness, a via structure with high aspect ratio can be realized. The doped ions remaining in the inner wall of the via structure can improve the damage resistance of the via structure, reduce the roughness of the inner wall of the via structure, and further improve the connection reliability of the connecting electrode in the via structure. In addition, since the via structure with high aspect ratio can be realized, the spacing between adjacent via structures can be reduced, the density of the via structure can be improved, and a more delicate component can be manufactured.

[0125] In some embodiments, the doping ions can be selected from at least one of Na ions, K ions, Li ions, Ca ions, Sr ions, and Ba ions. Doping the substrate with these ions can make the substrate 01 have better toughness, so that a via structure with a high aspect ratio can be realized; and can also effectively improve the damage resistance of the via structure and reduce the roughness of the inner wall of the via structure.

[0126] In some embodiments, ion doping can be performed from the first surface 011 to the inside of the substrate 01 to form a first dopant region; ion doping can also be performed from the second surface 012 to the inside of the substrate 01 to form a second dopant region; ion doping can also be performed from the first surface 011 and the second surface 012 to the inside of the substrate 01 to form the first dopant region and the second dopant region, and the depths of the first dopant region and the second dopant region are both less than the thickness of the substrate.

[0127] In this embodiment, the position of the doping region can be determined according to the via structure to be formed. When a via with a high aspect ratio (greater than 28:1) is to be formed, ion doping is performed on the region where the via is to be formed from the first surface and the second surface, respectively; when a blind hole with a high aspect ratio (greater than 18:1) is to be formed, ion doping is performed on the region where the via is to be formed from the first surface or the second surface. When a via with a high aspect ratio is not to be formed, the region where the via is to be formed is not doped.

[0128] When ion doping is performed from the first surface 011 to the inside of the substrate 01, the doping concentration of the first dopant region gradually decreases in the direction away from the first surface 011, and can decrease from 10 19 / cm 3 to 0. For example, when the depth of the first dopant region is 300 μm, the doping concentration of the surface layer of the first dopant region is 10 19 / cm 3 , and the doping concentration is 0 at a depth of 300 μm.

[0129] When ion doping is performed from the second surface 012 to the inside of the substrate 01, the doping concentration of the second dopant region gradually decreases in the direction away from the second surface 012, and can decrease from 10 19 / cm 3 to 0. For example, when the depth of the second dopant region is 300 μm, the doping concentration of the surface layer of the second dopant region is 10 19 / cm 3 , and the doping concentration is 0 at a depth of 300 μm.

[0130] The first dopant region and the second dopant region can be in communication, as shown in FIG. 4, and the first dopant region and the second dopant region in communication constitute the entire dopant region 03. The depth of the first dopant region can be equal to the depth of the second dopant region, or can not be equal.

[0131] When ion doping is performed from both the first surface 011 and the second surface 012 into the interior of the substrate 01, the first dopant region and the second dopant region in communication constitute the entire dopant region, and the laser modification is performed on the entire thickness of the substrate, after etching the substrate, a via structure 04 can be formed as shown in FIG. 6 and FIG. 10. The via structure 04 includes a first hole 041 and a second hole 042. The first hole 041 extends from the first surface 011 to the interior of the substrate 01, and the aperture of the first hole 041 gradually decreases in the direction away from the first surface 011. The second hole 042 extends from the second surface 012 to the interior of the substrate 01, and the aperture of the second hole 042 gradually decreases in the direction away from the second surface 012. As shown in FIG. 10, the first hole 041 and the second hole 042 can not be connected, so that blind holes 08 are formed on both sides of the substrate, and the central axes of the blind holes 08 on both sides can not coincide. As shown in FIG. 6, the first hole 041 and the second hole 042 are connected to constitute a through hole penetrating the substrate, and the dopant region 03 surrounds the via structure 04, the first dopant region surrounds the first hole 041, and the second dopant region surrounds the second hole 042.

[0132] The ion of the dopant region 03 generates compressive stress, which can make the substrate 01 have better toughness, and can realize a via structure 04 with a high aspect ratio. As shown in FIG. 6, the first hole 041 and the second hole 042 are connected to constitute a through hole penetrating the substrate (i.e. the via structure 04), and when the thickness of the substrate 01 is 50 μm to 500 μm, the aspect ratio of the via structure 04 can be greater than or equal to a first value, and the first value can be 10:1 to 40:1, and preferably 30:1 to 40:1.

[0133] In some embodiments, the angle between the sidewall of the first hole 041 and the first direction can be 0.5 to 10°, and preferably 0.5 to 1°, and the first direction is perpendicular to the substrate; and / or, the angle between the sidewall of the second hole 042 and the first direction can be 0.5 to 10°, and preferably 0.5 to 1°; which is conducive to realizing a via structure with a high aspect ratio.

[0134] The ion doping can improve the damage resistance of the via structure 04, and reduce the roughness of the inner wall of the via structure 04. The roughness of the inner wall of the via structure 04 can be 0.2-2 nm. Thus, the connection reliability of the connecting electrode formed in the via structure 04 can be improved. In addition, the via structure 04 with high aspect ratio can be realized, and the compressive stress around the via structure is changed by ion doping, so that the compressive resistance of the via structure is improved. The distance between adjacent via structures 04 can be reduced to not more than 15 μm. Thus, the density of the via structure 04 can be improved, and a more fine component can be realized. The distance D between the adjacent via structures 04 can be the distance between the center axes of the adjacent via structures.

[0135] In the embodiment, only the substrate in the region where the via structure is located is ion doped, and the performance of other regions of the substrate is not affected, so that the excellent electrical and physical properties of the original substrate can be retained.

[0136] In the embodiment, in the horizontal direction (parallel to the substrate 01), the width of the doped region 03 surrounding the via structure 04 can be 1 nm-1000 μm. The width of the doped region 03 is large, which is beneficial to increase the toughness of the substrate, but will affect the electrical and physical properties of the substrate in other regions except the via structure. Therefore, preferably, the width of the doped region 03 surrounding the via structure 04 can be 1 nm-1000 μm, so that the toughness and the electrical and physical properties of the substrate can be considered. The width of the doped region 03 is determined by the difference between the critical dimension of the doped region and the critical dimension of the via structure. In the direction away from the surface of the substrate, the width of the doped region gradually increases, and the angle between the sidewall of the doped region and the vertical direction (perpendicular to the substrate 01) can be 0.5-4°.

[0137] The via structure of the embodiment can be a via shown in FIG. 6, or a blind hole 08 as shown in FIG. 8. When forming the blind hole 08, ion doping can be performed only from the first surface to the inside of the substrate 01 to form a doped region. The depth of the doped region is less than the depth of the substrate 01. When laser modification is performed, laser modification is performed only from the first surface to the substrate. The depth of the laser modification is less than the depth of the doped region. Then, the substrate is etched to form the blind hole 08. The doped region surrounds the sidewall and the bottom of the blind hole 08. In the direction away from the first surface, the doping concentration of the doped region gradually decreases, which can be from 10 19 / cm 3 to 0. For example, when the depth of the doped region is 300 μm, the doping concentration of the surface layer of the doped region is 10 19 / cm 3 , and the doping concentration at the position of 300 μm deep is 0.

[0138] As shown in FIG. 8, the blind hole 08 extends from the first surface to the inside of the substrate 01, and the aperture of the blind hole 08 gradually decreases in the direction away from the first surface.

[0139] The aperture of the blind hole 08 can be 3 μm-1000 μm, the depth can be 50 μm-400 μm, the included angle between the sidewall and the vertical direction can be 0.5-10°, preferably 0.5-1°, and the roughness of the inner wall can be 0.2-2 nm. The width of the doped region 03 surrounding the via structure 04 can be 1 nm-1000 μm, and the width of the doped region 03 is determined by the difference between the critical dimension of the doped region and the critical dimension of the blind hole 08. The width of the doped region gradually increases in the direction away from the surface of the substrate, and the included angle between the sidewall of the doped region and the vertical direction (perpendicular to the substrate 01) can be 0.5-4°.

[0140] The ion of the doped region 03 generates compressive stress, which can make the substrate 01 have better toughness and enable the blind hole 08 with high aspect ratio. In addition, since the blind hole 08 with high aspect ratio can be realized, and the compressive stress around the blind hole 08 is changed by ion doping to improve the compressive resistance of the blind hole 08, the distance between adjacent blind holes 08 can be reduced to not more than 15 μm, which can improve the density of the blind holes 08 and enable the production of more delicate components. The distance between adjacent blind holes 08 can be the distance between the center axes of adjacent blind holes 08.

[0141] In some embodiments, after the blind hole 08 shown in FIG. 8 is prepared, the substrate can also be thinned from the other surface of the substrate until the blind hole 08 is exposed, forming a structure as shown in FIG. 11, so that a through hole penetrating the substrate, i.e., a via structure 04 penetrating both sides of the glass substrate, can be obtained. The via structure 04 extends from the first surface of the substrate to the second surface of the substrate, and the aperture of the via structure gradually decreases in the direction away from the first surface. The first surface and the second surface are two opposite surfaces of the substrate. When the thickness of the glass substrate is 50 μm-500 μm, the aspect ratio of the via structure 04 can be greater than or equal to a second value, which can be 5:1-20:1, preferably 18:1-20:1.

[0142] In some embodiments, the via structure 04 can also be the via shown in FIG. 9. When forming the via structure 04, ion doping is only performed from the first surface to the inside of the substrate 01 to form a doping region, and the depth of the doping region is less than the depth of the substrate 01. When performing laser modification, the depth of the laser modification is equal to the thickness of the substrate. Then, etching is performed on the substrate to form the first hole 041 and the second hole 042, and the first hole 041 and the second hole 042 are in communication to form the via structure 04. The doping region only surrounds the first hole 041 and does not surround the second hole 042. In the direction away from the first surface, the doping concentration of the doping region gradually decreases. The aspect ratio of the first hole 041 is greater than the aspect ratio of the second hole 042. The angle between the sidewall of the first hole 041 and the vertical direction can be 0.5-4°, and the angle between the sidewall of the second hole 042 and the vertical direction can be 4-10°. The aperture of the via structure 04 can be 3-1000 μm, and the thickness of the substrate 01 can be 50-500 μm.

[0143] In this embodiment, different aspect ratio via structures can be prepared on different surfaces of the substrate. If a high aspect ratio via structure is needed on the first surface, ion doping is performed from the first surface to the inside of the substrate 01. If a high aspect ratio via structure is not needed on the first surface, ion doping is not performed from the first surface to the inside of the substrate 01. If a high aspect ratio via structure is needed on the second surface, ion doping is performed from the second surface to the inside of the substrate 01. If a high aspect ratio via structure is not needed on the second surface, ion doping is not performed from the second surface to the inside of the substrate 01.

[0144] This embodiment can prepare via structures with different aspect ratios to meet different device requirements. Specifically, when a via structure with a higher aspect ratio is needed, ion doping and glass modification are performed on the region to be formed into a via structure. When a via structure with a lower aspect ratio is needed, ion doping is not performed on the region to be formed into a via structure.

[0145] The technical solution of the embodiment can obviously improve the problem of the TGV opening being tapered, that is, improve the ratio of the minimum aperture to the maximum aperture of the via structure. In the related art, when the included angle between the sidewall of the TGV opening and the vertical direction is 10°, the ratio of the minimum aperture to the maximum aperture of the TGV opening is only 0.18, the connecting electrode is prone to breaking in the TGV opening, and the conductivity of the connecting electrode in the TGV opening cannot be guaranteed. Through the technical solution of the embodiment, the ratio of the minimum aperture to the maximum aperture of the via structure can be increased to greater than or equal to 0.6. In an embodiment, when the included angle between the sidewall of the via structure and the vertical direction is 1°, the ratio of the minimum aperture to the maximum aperture of the via structure can reach 0.9. The ratio of the minimum aperture to the maximum aperture of the via structure can be obviously improved, the conductivity of the connecting electrode in the via structure can be guaranteed, and it is also beneficial to further reduce the spacing between the via structures, so that the spacing between adjacent via structures is less than 15 microns, which is beneficial to increase the layout density of the via structures and realize the preparation of fine devices by using a substrate.

[0146] In the formula, for a blind hole, the minimum aperture is the aperture of the bottom of the blind hole, and the maximum aperture is the aperture of the blind hole in the plane where the substrate surface is located. For a through hole, the maximum aperture is the aperture of the through hole in the plane where the substrate surface is located, and the minimum aperture is the aperture of the thinnest part of the through hole in the plane parallel to the substrate.

[0147] The embodiment of the present disclosure further provides an integrated passive device, including the substrate described in any of the above embodiments.

[0148] In an example embodiment, the passive devices in the integrated passive device can be integrated on the first surface and the second surface of the substrate described in any of the above embodiments. In an example embodiment, the passive devices integrated on the substrate can realize communication connection between devices or communication connection between the devices and external equipment through the front conductive film layer, the connecting electrode, and the back conductive film layer. In an example embodiment, the passive devices can include inductors, capacitors, and the like.

[0149] The embodiment of the present disclosure further provides an electronic device, including the integrated passive device described in any of the above embodiments.

[0150] The embodiment of the present disclosure further provides an electronic device, including the substrate described in any of the above embodiments.

[0151] In the embodiment of the present disclosure, the electronic device includes but is not limited to a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.

[0152] In the embodiments of the methods of the present disclosure, the sequence numbers of the steps do not serve to limit the order of the steps, and for those skilled in the art, the changes in the order of the steps without creative effort are within the protection scope of the present disclosure.

[0153] It should be noted that each of the embodiments in the present disclosure is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment mainly describes the differences from other embodiments. In particular, for the embodiments, since they are basically similar to the product embodiments, the description is relatively simple, and the related parts can be referred to the part of the description of the product embodiments.

[0154] Unless otherwise defined, technical terms or scientific terms used in the present disclosure should be understood as the common meaning thereof to those skilled in the art to which the present disclosure belongs. The terms "first", "second" and similar terms used in the present disclosure do not denote any order, quantity or importance, but are used to distinguish different components. The terms "include" or "contain" and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" or "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "upper", "lower", "left", "right" and the like are only used to represent relative positional relationships, and when the absolute positions of the described objects are changed, the relative positional relationships may also be changed accordingly.

[0155] It can be understood that when an element such as a layer, a film, a region or a substrate is referred to as being "on" or "under" another element, it can be "directly" on or under the other element, or there can be an intermediate element.

[0156] In the description of the above-described embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0157] The above description is merely specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present disclosure, which should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A substrate, characterized in that, include: A substrate having a porous structure on its surface, the substrate including a doped region surrounding at least a portion of the porous structure, the doped region being a substrate containing doped ions.

2. The substrate according to claim 1, characterized in that, The angle between the sidewall of the via structure and the first direction is 0.5 to 10°, and the first direction is perpendicular to the substrate.

3. The substrate according to claim 1, characterized in that, Along the direction away from the surface, the doping concentration of the doped region gradually decreases.

4. The substrate according to claim 1, characterized in that, The via structure includes a first hole and a second hole. The first hole extends from a first surface of the substrate to the interior of the substrate, and the diameter of the first hole gradually decreases in the direction away from the first surface. The second hole extends from a second surface of the substrate to the interior of the substrate, and the diameter of the second hole gradually decreases in the direction away from the second surface. The first hole and the second hole are connected to form the via structure. The first surface and the second surface are two surfaces of the substrate that are opposite to each other.

5. The substrate according to claim 4, characterized in that, The aspect ratio of the via structure is greater than or equal to a first value, wherein the first value is 10:1 to 40:

1.

6. The substrate according to claim 1, characterized in that, The via structure extends from the first surface of the substrate to the second surface of the substrate. Along the direction away from the first surface, the aperture of the via structure gradually decreases. The first surface and the second surface are two surfaces of the substrate that are opposite to each other.

7. The substrate according to claim 6, characterized in that, The aspect ratio of the via structure is greater than or equal to a second value, wherein the second value is 5:1 to 20:

1.

8. The substrate according to claim 1, characterized in that, The roughness of the inner wall of the via structure is 0.2–2 nm.

9. The substrate according to claim 1, characterized in that, The ratio of the minimum aperture to the maximum aperture of the via structure is greater than or equal to 0.

6.

10. An integrated passive device, characterized in that, Includes the substrate as described in any one of claims 1-9.

11. An electronic device, characterized in that, Includes the substrate as described in any one of claims 1-9.

12. A method for manufacturing a substrate, characterized in that, include: Provide a base; A mask pattern is formed on the surface of the substrate; Ion doping is performed on the substrate not covered by the mask pattern to form a doped region; Remove the mask pattern and perform laser modification on the first region to be formed of the via structure, wherein the orthographic projection of the first region on the surface is located within the orthographic projection of the doped region on the surface; The substrate is wet-etched to form the via structure.

13. The method for manufacturing a substrate according to claim 12, characterized in that, Wet etching of the substrate includes: The substrate is wet-etched using a hydrofluoric acid solution; or The substrate is wet-etched using an alkaline solution in an environment with a temperature higher than the preset temperature.

14. The method for manufacturing a substrate according to claim 12, characterized in that, The method specifically includes: Mask patterns are formed on the first and second surfaces of the substrate, respectively, wherein the first and second surfaces are opposite to each other. Ion doping is performed on the substrate not covered by the mask pattern from the first surface and the second surface respectively to form doped regions; Remove the mask pattern and perform laser modification on the first region to be formed of the via structure from the first surface and the second surface respectively. The orthographic projection of the first region on the first surface is located within the orthographic projection of the doped region on the first surface. The substrate is wet-etched from the first surface and the second surface respectively to form the via structure on the first surface and the second surface respectively.

15. The method for manufacturing a substrate according to claim 12, characterized in that, The method specifically includes: A mask pattern is formed on a first surface of the substrate, wherein the first surface is a surface of the substrate; Ion doping is performed on the substrate not covered by the mask pattern from the first surface to form a doped region; Remove the mask pattern and perform laser modification on the first region of the first surface to form the via structure, wherein the orthographic projection of the first region on the surface is located within the orthographic projection of the doped region on the surface. Wet etching is performed on the substrate from the first surface to form the via structure on the first surface; The substrate is thinned from a second surface until the via structure is exposed, the second surface being the surface opposite to the first surface.

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