Magneto-sensitive element and manufacturing method therefor, magneto-sensitive sensor, electronic apparatus, chip, and electronic device

Abstract

The present disclosure relates to the technical field of magnetic sensing, and specifically to a magneto-sensitive element and a manufacturing method therefor, a magneto-sensitive sensor, an electronic apparatus, a chip, and an electronic device. The magneto-sensitive element comprises a substrate, an active area, an excitation electrode, and magnetic deflection current detection electrodes, wherein the substrate is located at the bottommost layer; the active area is formed on the substrate; the active area is of a comb-shaped structure, the comb-shaped structure comprises a comb ridge and a plurality of comb teeth, and the plurality of comb teeth extend from one or more sides of the comb ridge; the excitation electrode is arranged on the comb ridge or on the periphery of the comb ridge, is in electrical contact with the comb ridge, is connected to an external power supply by means of a wire, and is used for applying an excitation current to the magneto-sensitive element; the magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and used for detecting a current change caused by the deflection of the excitation current under the action of a magnetic field. The magneto-sensitive sensor comprises the magneto-sensitive element, and a magnetic field is measured by using a current change caused by an excitation current, thereby improving the sensitivity of the sensor.

Description

Magnetic sensitive element and preparation method thereof, magnetic sensitive sensor, electronic device, chip and electronic equipment TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of magnetic sensing, in particular to a magnetic sensitive element and a preparation method thereof, a magnetic sensitive sensor, an electronic device, a chip and an electronic equipment. BACKGROUND

[0002] A Hall sensor is a kind of magnetic sensor that can be used for magnetic field measurement, which utilizes the Hall effect in a semiconductor to measure the magnetic field by measuring the Hall voltage generated by the external magnetic field in the Hall device. Since the Hall sensor has a simple structure, especially the silicon-based Hall can be monolithically integrated with the back-end conditioning circuit IC, the cost of the Hall sensor can be very low, which makes the Hall sensor widely used in magnetic field measurement, position measurement and the like.

[0003] In the prior art, when measuring the magnetic field by the Hall sensor, an excitation voltage or current is applied to the Hall sensor to make the carriers in the Hall element contained in the Hall sensor flow in a certain direction. When a magnetic field perpendicular to the surface of the Hall element is applied, the carriers flowing in a certain direction are deflected under the action of the Lorentz force. When reaching the equilibrium state, a pressure difference proportional to the magnetic field strength is generated between the two sides of the Hall sensor, which is called the Hall voltage. Thus, the value of the magnetic field strength can be obtained by measuring the Hall voltage.

[0004] However, the Hall voltage generated by the Hall sensor under the action of the magnetic field is relatively small, and in actual application, the Hall voltage needs to be amplified, filtered, and compensated for offset and temperature drift. Even so, the sensitivity of the Hall sensor, especially the silicon-based Hall sensor, is relatively small, and in addition, the Hall sensor also has relatively large 1 / f noise and zero offset. Based on the above reasons, the precision of the Hall sensor cannot be made very high, which greatly limits the application scenarios of the Hall sensor.

[0005] How to improve the sensitivity of the sensor and thus improve the measurement precision in the measurement application scenario is a problem to be solved. SUMMARY

[0006] To solve the problems in the related art, the present disclosure provides a magnetic sensitive element and a preparation method thereof, a magnetic sensitive sensor, an electronic device, a chip and an electronic equipment.

[0007] In a first aspect, the present disclosure provides a magnetic sensitive element, comprising: a substrate, an active region, an excitation electrode and a magnetic deflection current detection electrode.

[0008] The substrate is located at the bottom layer.

[0009] The active region is formed on the substrate; wherein the active region is a symmetric comb structure, the symmetric comb structure comprises a comb ridge and a plurality of comb teeth, the plurality of comb teeth extends from one side or more sides of the comb ridge; wherein when the symmetric comb structure is a non-rotationally symmetric comb structure, the length dimension of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width dimension of the comb ridge;

[0010] The excitation electrode is arranged on the comb ridge or the periphery of the comb ridge and forms electrical contact with the comb ridge, and is connected with an external power source through a wire, for applying an excitation current to the magnetic sensitive element;

[0011] The magnetic deflection current detection electrode is arranged on both sides of the comb tooth, for detecting the current change generated after the excitation current is deflected due to the magnetic field.

[0012] According to an embodiment of the present disclosure, the magnetic deflection current detection electrode comprises a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, and the magnetic deflection current detection electrode is arranged on both sides of the comb tooth, comprising:

[0013] The magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth, and each magnetic deflection current detection positive electrode is connected with each magnetic deflection current detection negative electrode after being connected with each other, and is connected with an external current measurement circuit through a wire after being connected with each other.

[0014] According to an embodiment of the present disclosure, the magnetic deflection current detection electrode is a plurality of magnetic deflection current detection electrodes, and the size of each magnetic deflection current detection electrode is equal.

[0015] According to an embodiment of the present disclosure,

[0016] The excitation electrode electrically contacts the entire periphery of the comb ridge, or,

[0017] The excitation electrode is arranged at the center of the comb ridge, or,

[0018] The excitation electrode is arranged on the periphery of the comb ridge or the comb ridge close to the edge of the comb ridge on the opposite sides of each comb tooth, and the center line of the excitation electrode coincides with the center line of the opposite sides.

[0019] According to an embodiment of the present disclosure, the symmetric comb structure comprises an axisymmetric comb structure and / or a rotationally symmetric comb structure, the axisymmetric comb structure comprises a rectangular symmetric comb structure; the rotationally symmetric comb structure comprises a ring symmetric comb structure, a circular symmetric comb structure or a regular polygon symmetric comb structure.

[0020] According to an embodiment of the present disclosure, the size and spacing of each comb tooth of the symmetric comb structure are equal.

[0021] According to an embodiment of the present disclosure, the substrate is a semiconductor substrate, and the substrate is opposite to a doping type of the active region.

[0022] In a second aspect, the present disclosure provides a magnetic sensor, comprising:

[0023] The magnetic sensor according to any one of the first aspect; and

[0024] The excitation current deflection amount measurement module is connected with the magnetic deflection current detection electrode of the magnetic sensor, and is configured to, when an excitation current is applied to an active region of the magnetic sensor through an excitation electrode of the magnetic sensor, and a magnetic field perpendicular to an upper surface of the active region exists, the excitation current is deflected under the action of the magnetic field, and the deflection amount of the deflected excitation current is measured by using the magnetic deflection current detection electrode.

[0025] According to an embodiment of the present disclosure, the magnetic sensor further comprises a magnetic field measurement module connected with the excitation current deflection amount measurement module.

[0026] The magnetic field measurement module is configured to measure the magnetic field according to the deflection amount of the excitation current.

[0027] According to an embodiment of the present disclosure, the measurement of the deflection amount of the deflected excitation current by using the magnetic deflection current detection electrode comprises:

[0028] A first deflection current value is detected by using a magnetic deflection current detection positive electrode of the magnetic sensor;

[0029] A second deflection current value is detected by using a magnetic deflection current detection negative electrode of the magnetic sensor;

[0030] The deflection amount of the excitation current is determined according to the first deflection current value and the second deflection current value, wherein the deflection amount of the excitation current is a difference between the first deflection current value and the second deflection current value.

[0031] The measurement of the magnetic field according to the deflection amount of the excitation current comprises:

[0032] The intensity of the magnetic field is measured according to the difference between the first deflection current value and the second deflection current value.

[0033] According to an embodiment of the present disclosure, the intensity of the magnetic field and the deflection amount of the excitation current are in a linear relationship, and the measurement of the magnetic field according to the deflection amount of the excitation current comprises:

[0034] determining a linear proportional coefficient according to the sensitivity coefficient of the magnetic sensitive element and the current value of the excitation current;

[0035] determining the intensity of the magnetic field according to the linear proportional coefficient and the deflection amount of the excitation current.

[0036] According to an embodiment of the present disclosure, the determining a linear proportional coefficient according to the sensitivity coefficient of the magnetic sensitive element and the current value of the excitation current comprises:

[0037] The linear proportional coefficient k is determined according to the following formula:

[0038] Wherein, k h represents the sensitivity coefficient of the magnetic sensitive element, and I represents the current value of the excitation current.

[0039] According to an embodiment of the present disclosure, the determining the intensity of the magnetic field according to the linear proportional coefficient and the deflection amount of the excitation current comprises:

[0040] The intensity B of the magnetic field is determined according to the following formula: B=k x ΔI

[0041] Wherein, ΔI represents the deflection amount of the excitation current.

[0042] According to an embodiment of the present disclosure, when the excitation current is applied to the active area through the excitation electrode, a constant current source is used for power supply.

[0043] In a third aspect, the present disclosure provides a preparation method of a magnetic sensitive element, comprising:

[0044] providing a substrate, which is located at the bottom layer;

[0045] forming an active area on the substrate; wherein the active area is a symmetric comb-shaped structure, which comprises a comb ridge and a plurality of comb teeth, and the plurality of comb teeth extend from one side or multiple sides of the comb ridge; wherein when the symmetric comb-shaped structure is a non-rotationally symmetric comb-shaped structure, the length dimension of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width dimension of the comb ridge;

[0046] forming an excitation electrode; the excitation electrode is arranged on the comb ridge or the periphery of the comb ridge and forms electrical contact with the comb ridge, and is connected with an external power supply through a lead wire, and is used for applying an excitation current to the magnetic sensitive element;

[0047] forming a magnetic deflection current detection electrode; the magnetic deflection current detection electrode is arranged on both sides of the comb teeth, and is used for detecting the current change generated after the excitation current is deflected due to the magnetic field.

[0048] According to an embodiment of the present disclosure, the magnetic deflection current detection electrode comprises a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, and the magnetic deflection current detection electrode is arranged on both sides of the comb tooth, comprising:

[0049] The magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth. After the magnetic deflection current detection positive electrodes are connected to each other, and after the magnetic deflection current detection negative electrodes are connected to each other, the magnetic deflection current detection positive electrodes and the magnetic deflection current detection negative electrodes are respectively connected to an external current measurement circuit through wires.

[0050] According to an embodiment of the present disclosure, the magnetic deflection current detection electrode comprises a plurality of magnetic deflection current detection electrodes, and the sizes of the magnetic deflection current detection electrodes are equal.

[0051] According to an embodiment of the present disclosure,

[0052] The excitation electrode electrically contacts the entire periphery of the comb ridge, or

[0053] The excitation electrode is arranged at the center of the comb ridge, or

[0054] The excitation electrode is arranged on the periphery of the comb ridge or the comb ridge close to the edge of the comb ridge on the opposite side of each comb tooth, and the center line of the excitation electrode coincides with the center line of the opposite side.

[0055] According to an embodiment of the present disclosure,

[0056] The symmetrical comb structure comprises an axisymmetric comb structure and / or a rotationally symmetric comb structure, the axisymmetric comb structure comprises a rectangular symmetric comb structure, and the rotationally symmetric comb structure comprises a ring symmetric comb structure, a circular symmetric comb structure or a regular polygon symmetric comb structure.

[0057] According to an embodiment of the present disclosure, the sizes and intervals of the comb teeth of the symmetrical comb structure are equal.

[0058] According to an embodiment of the present disclosure, the substrate is a semiconductor substrate, and the substrate is opposite to the doping type of the active region.

[0059] In a fourth aspect, an electronic device is provided in the embodiments of the present disclosure, and the electronic device comprises the magnetic sensitive element in any one of the first aspect.

[0060] In a fifth aspect, a chip is provided in the embodiments of the present disclosure, and the chip comprises the magnetic sensitive element in any one of the first aspect.

[0061] In a sixth aspect, a chip is provided in the embodiments of the present disclosure, and the chip comprises the magnetic sensitive sensor in the second aspect.

[0062] In a seventh aspect, the electronic device provided in the embodiments of the present disclosure includes the magnetic sensitive element of any one of the first aspect.

[0063] In an eighth aspect, the electronic device provided in the embodiments of the present disclosure includes the magnetic sensitive sensor of the second aspect.

[0064] According to the technical scheme provided in the embodiments of the present disclosure, the excitation electrode, the magnetic deflection current detection electrode and the active region with the symmetrical comb structure are formed in the magnetic sensitive sensor, then the excitation current is applied to the active region through the excitation electrode, under the action of the magnetic field, the excitation current is deflected, the deflection amount of the deflected excitation current is detected through the magnetic deflection current detection electrode by using the current magnetic deflection effect, since the deflection amount is related to the intensity of the magnetic field, finally the magnetic field is measured according to the deflection amount of the excitation current, thereby improving the sensitivity of the sensor, and thus improving the measurement precision in the measurement application scenario.

[0065] It should be understood that the foregoing general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0066] Other features, objects and advantages of the present disclosure will become more apparent from the following detailed description of the non-limiting embodiments, combined with the attached drawings. In the drawings:

[0067] FIG. 1 shows a structural schematic diagram of a magnetic sensitive element according to an embodiment of the present disclosure;

[0068] FIG. 2 shows a structural schematic diagram of another magnetic sensitive element according to an embodiment of the present disclosure;

[0069] FIG. 3 shows a structural schematic diagram in the top view of a magnetic sensitive element according to an embodiment of the present disclosure;

[0070] FIG. 4 shows a structural schematic diagram in the top view of another magnetic sensitive element according to an embodiment of the present disclosure;

[0071] FIG. 5 shows a structural schematic diagram in the top view of yet another magnetic sensitive element according to an embodiment of the present disclosure;

[0072] FIG. 6 shows a structural schematic diagram in the top view of still another magnetic sensitive element according to an embodiment of the present disclosure;

[0073] FIG. 7 shows a structural schematic diagram of a magnetic sensitive sensor according to an embodiment of the present disclosure;

[0074] FIG. 8 shows a structural schematic diagram of another magnetic sensitive sensor according to an embodiment of the present disclosure;

[0075] FIG. 9 shows a flowchart of a preparation method of a magnetic sensitive element according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0076] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so as to be easily carried out by one of ordinary skill in the art. Also, portions unrelated to the description of the exemplary embodiments are omitted in the drawings for the sake of clarity.

[0077] In the present disclosure, it should be understood that terms such as "include" or "have" are intended to indicate that there are features, numbers, steps, actions, components, parts or combinations thereof disclosed in the specification, and do not exclude the possibility that one or more other features, numbers, steps, actions, components, parts or combinations thereof exist or are added.

[0078] It is additionally noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict. The present disclosure will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0079] As described above, in the prior art, the position, magnetic field, etc. are mainly measured by the Hall voltage output by the Hall sensor. However, since the Hall voltage generated by the Hall sensor under the action of the magnetic field is relatively small, an amplification circuit and a filter circuit are needed to amplify and filter the Hall voltage signal, and when the amplification circuit and the filter circuit are used to amplify and filter the Hall voltage signal, some problems such as noise amplification, nonlinear distortion and offset error may be introduced, thereby affecting the measurement accuracy. Even if the problems introduced by the amplification circuit and the filter circuit are ignored, in terms of sensitivity, the sensitivity of the Hall sensor, especially the silicon-based Hall sensor, is relatively small, and the Hall sensor also has relatively large 1 / f noise and zero bias. Due to these reasons, the accuracy of the Hall sensor cannot be made very high, and the application scenarios of the Hall sensor are greatly limited.

[0080] How to improve the sensitivity of the sensor, thereby improving its measurement accuracy in the measurement application scenario? After repeated demonstration and careful consideration, the present inventors propose a kind of magnetic sensitive element based on current output and its preparation method. Specifically, in the magnetic sensitive sensor, excitation electrode, magnetic deflection current detection electrode and active region with comb structure are formed, then excitation current is applied to the active region through the excitation electrode, under the action of magnetic field, the excitation current is deflected, the deflection amount of the excitation current after deflection due to the action of magnetic field is measured by the magnetic deflection current detection electrode through the current magnetic deflection effect, since the deflection amount is related to the strength and direction of the magnetic field, finally the magnetic field is measured according to the deflection amount of the excitation current, on the one hand, since the current is the flow of electric charge, based on the stable characteristics of current in conductor, and not easy to be disturbed by external factors (such as temperature change, etc.), therefore compared with voltage measurement, especially for the measurement of small voltage, various potential measurement errors can be eliminated or minimized, thereby obtaining higher measurement accuracy, and the temperature drift of the sensor can be effectively inhibited, and the temperature stability of the sensor is improved;On the other hand, since the excitation current is applied, the deflection amount of the excitation current due to the action of magnetic field is directly reflected the effect of magnetic field on current, and the measurement of Hall voltage is to calculate the strength of the magnetic field by measuring the potential difference indirectly generated by the excitation current, while direct measurement usually has higher sensitivity than indirect measurement, thereby improving the sensitivity of the sensor, and further improving the measurement accuracy of the sensor in the measurement application scenario.

[0081] Figure 1 shows a structure schematic diagram of a kind of magnetic sensitive element according to an embodiment of the present disclosure. As shown in Figure 1, the magnetic sensitive element includes: substrate, active region, excitation electrode and magnetic deflection current detection electrode;The substrate is located in the bottom layer;The active region is formed on the substrate;Wherein, the active region is comb structure, the comb structure includes comb ridge and multiple comb teeth, the multiple comb teeth extend from one side or multiple sides of the comb ridge;The excitation electrode is arranged on the comb ridge and forms electrical contact with the comb ridge, connected with external power supply through wire, for applying excitation current to the magnetic sensitive element;The magnetic deflection current detection electrode is arranged on both sides of the comb tooth (Figure 1 only shows the connection relationship, and does not show the position relationship), for detecting the current change generated after the excitation current is deflected due to the action of magnetic field.

[0082] Figure 2 shows a structure schematic diagram of another kind of magnetic sensitive element according to an embodiment of the present disclosure. The difference from the magnetic sensitive element shown in Figure 1 is that the excitation electrode is arranged on the periphery of the comb ridge. Wherein, when forming excitation electrode on the periphery of the comb ridge, part of the excitation electrode is directly formed on the comb ridge, that is, connected with the comb ridge to form electrical contact, and the remaining part is formed on the insulating medium layer on the substrate, that is, the excitation electrode is electrically isolated from the substrate through the insulating medium layer.

[0083] According to an embodiment of the present disclosure, the substrate is a semiconductor substrate, and the substrate is opposite to the doping type of the active region to form a PN junction isolation, which can prevent the excitation current from flowing from the active region to the substrate when the excitation current is applied to the active region through the excitation electrode.

[0084] Specifically, the semiconductor substrate refers to that the substrate is made of semiconductor material, which can be a single-element semiconductor such as silicon (Si) and germanium (Ge), or a compound semiconductor composed of two or more elements such as gallium arsenide (GaAs) and gallium indium arsenide phosphide (GaxIn1-xAsyP1-y).

[0085] In addition, the conductivity of the semiconductor can be adjusted by controlling the doping, that is, adding impurities to the pure semiconductor. The doping type is generally divided into N-type and P-type. Among them, the N-type semiconductor refers to the doping of donor impurity atoms in the substrate, and the P-type semiconductor refers to the doping of acceptor impurity atoms in the substrate. When the active region is formed on the semiconductor substrate, the doping type can be selected as needed. If the semiconductor substrate is N-type, a P-type active region can be formed thereon; conversely, if the semiconductor substrate is P-type, an N-type active region can be formed thereon. The active region can be formed by various methods such as ion implantation, diffusion, epitaxy, etc.

[0086] Further, the performance of the magnetic sensitive element can be improved by optimizing and selecting the active region material. On the one hand, the active region can adopt a material with high mobility to increase the influence of the magnetic field on the current, thereby improving the sensitivity of the magnetic sensitive element; on the other hand, the active region can adopt a material with a low temperature coefficient to reduce the influence of temperature change on the performance of the magnetic sensitive element, thereby improving the performance stability of the magnetic sensitive element at different temperatures.

[0087] It should be noted that the sensitivity of the magnetic sensitive element can be adjusted by adjusting the thickness and doping concentration of the active region. The smaller the thickness of the active region and the lower the doping concentration, the higher the sensitivity. However, too small thickness or too low doping concentration will result in a relatively large resistance, which is not conducive to the design of other functional circuits. In specific implementation, appropriate doping concentration and thickness can be selected according to different application scenarios and design requirements.

[0088] According to an embodiment of the present disclosure, the comb teeth in the comb structure can be block structures, which can be cuboids, cubes, etc.; or flat shapes such as rectangles, squares, etc.; and the shape of each comb tooth can be the same. Those skilled in the art can select according to specific application scenarios and design requirements. Different shapes can provide different performance advantages and functional characteristics to meet different use requirements. For example, in the case of detecting a specific magnetic field distribution, a comb tooth with a specific shape can be designed.

[0089] According to an embodiment of the present disclosure, the comb structure is a symmetric comb structure.

[0090] Specifically, the symmetric comb structure includes but is not limited to an axial symmetric comb structure and / or a rotational symmetric comb structure. The axial symmetric comb structure refers to a comb structure with axial symmetry, i.e., two parts can be completely overlapped after being folded along a certain symmetry axis, and the comb teeth part presents an equidistant arrangement or a repeating pattern, i.e., regularity and repetition. The axial symmetric comb structure includes but is not limited to a rectangular symmetric comb structure. The rotational symmetric comb structure refers to a comb structure with rotational symmetry, and the shape or pattern of the comb structure remains unchanged after being rotated by a certain angle (such as 90 degrees or 180 degrees) around the center. The rotational symmetric comb structure includes but is not limited to a ring symmetric comb structure, a circular symmetric comb structure or a regular polygon symmetric comb structure.

[0091] The working principle of the magnetic sensitive element in the embodiment of the present disclosure is to utilize the current magnetic deflection effect in a semiconductor, i.e., when there is a magnetic field perpendicular to the active region, the excitation current applied to the active region will be deflected when passing through the comb ridge according to the principle of Lorentz force. Based on the existence of the comb teeth, the deflected excitation current will flow between the comb teeth, and the current received by the electrodes on both sides of the comb teeth will be different. By measuring the difference between the currents on both sides of each comb tooth, the change amount of the deflection of the excitation current under the action of the magnetic field is obtained, i.e., the deflection amount of the excitation current. Due to the design of the comb structure, the excitation current is dispersed between multiple comb teeth, which can more effectively detect the deflection amount of the current, thereby improving the sensitivity of the magnetic sensitive element.

[0092] In addition, the current magnetic deflection effect and the Hall effect exist at the same time and are in a relationship of being offset by each other, i.e., they will offset each other. The present discloser finds through repeated experiments and demonstrations that for a non-rotational symmetric comb structure, when the length dimension of the comb ridge in the comb tooth arrangement direction is at least 3 times greater than the width dimension of the comb ridge, the current magnetic deflection effect will be much greater than the Hall effect, thereby improving the sensitivity of the magnetic sensitive element. For example, for a rectangular symmetric comb structure, if the comb teeth are arranged on the long side of the rectangle, the long side of the rectangle is the comb ridge length, and the width of the rectangle minus the length of the comb teeth is the comb ridge width. In order to make the current magnetic deflection effect much greater than the Hall effect, thereby improving the sensitivity of the magnetic sensitive element, the comb ridge length can be made much greater than the comb ridge width. In a specific example, the comb ridge length is at least 3 times greater than the comb ridge width.

[0093] According to an embodiment of the present disclosure, the size and the spacing of each comb tooth of the comb structure are equal.

[0094] Specifically, the equal size of each comb tooth of the comb structure refers to that the length, width (or diameter if the comb tooth is cylindrical) and any other related dimensions of each comb tooth are all exactly the same. The equal spacing of each comb tooth of the comb structure refers to that the distance between two adjacent comb teeth is equal.

[0095] The excitation electrode and the magnetic deflection current detection electrode involved in the embodiments of the present disclosure can be made of a metal with good conductivity and stability, such as gold (Au), silver (Ag), or copper (Cu), etc. A wire is connected to each of them for introducing or leading out current.

[0096] According to the embodiments of the present disclosure, the excitation electrode is one. This is different from the conventional Hall element, in which the excitation electrode is usually two. The reason why the excitation electrode in the Hall element needs to be two is mainly based on the working principle of the Hall effect.

[0097] The Hall effect refers to the phenomenon that the current of carriers (electrons or holes) in a semiconductor is deflected by the Lorentz force under the action of a magnetic field perpendicular to the current direction, thereby generating a potential difference in the direction perpendicular to the current and the magnetic field. This potential difference is the Hall voltage, which is proportional to the current density, the magnetic field strength and the Hall coefficient of the semiconductor material. The Hall voltage is generated by first generating a current in the semiconductor, therefore, the excitation electrode in the Hall element needs to be two, which are located at the two opposite sides of the Hall element. The two electrodes are connected by a conductor to form a closed loop, so that the current can flow between the two electrodes.

[0098] As mentioned before, since the working principle of the magnetic sensor element in the embodiments of the present disclosure is not to utilize the Hall effect, but to utilize the current magnetic deflection effect in the semiconductor, accordingly, the magnetic field measurement is not realized by measuring the Hall voltage, but by measuring the deflection amount of the excitation current, and the excitation current can be realized by only one excitation electrode. Therefore, based on the difference in working principle, the number of excitation electrodes is different, the excitation electrode in the embodiments of the present disclosure is one, and the specific shape can be determined according to the specific shape of the active region.

[0099] For the position of the excitation electrode and other components in the embodiments of the present disclosure, the following scenarios can be included:

[0100] The first scenario: the excitation electrode electrically contacts the entire periphery of the comb ridge. This scenario can correspond to the active region being a ring-symmetrical comb structure.

[0101] The second scenario: the excitation electrode is arranged at the center of the comb ridge. This scenario can correspond to the active region being a circular-symmetrical comb structure or a regular polygon-symmetrical comb structure.

[0102] The third scenario is that the excitation electrodes are arranged on the periphery of the comb ridges of the opposite sides of each comb tooth or near the edges of the comb ridges, and the center line of the excitation electrodes coincides with the center line of the opposite sides. This scenario can correspond to a rectangularly symmetric comb structure of the active region.

[0103] The magnetic deflection current detection electrode according to the embodiments of the present disclosure is different from the Hall electrode used for measuring the Hall voltage in the conventional Hall element. In order to measure the deflection amount of the excitation current, according to the embodiments of the present disclosure, in one specific implementation, the magnetic deflection current detection electrode can include a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, the magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth. After the magnetic deflection current detection positive electrodes are connected to each other and the magnetic deflection current detection negative electrodes are connected to each other, they are respectively connected to an external current measurement circuit through wires.

[0104] In addition to the specific implementation as described above, other specific implementations can be used according to different application scenarios and design requirements, such as: the magnetic deflection current detection positive electrode and the magnetic deflection current detection negative electrode are respectively arranged on the first side and the second side of every two or more comb teeth, or the magnetic deflection current detection electrode is designed and arranged in other ways, as long as the implementation scheme that the current change generated by the deflection of the excitation current caused by the magnetic field can be measured by the magnetic deflection current detection electrode is met, which is within the protection scope of the present disclosure.

[0105] According to the embodiments of the present disclosure, the magnetic deflection current detection electrode is multiple, and the sizes of the magnetic deflection current detection electrodes are equal. In addition, the positions of the magnetic deflection current detection electrodes are also symmetrical to each other.

[0106] It should be noted that when the overall structure composed of the active region, the excitation electrode, and the magnetic deflection current detection electrode all satisfy the same symmetry, for example: all based on a symmetry axis, at this time when there is no magnetic field, the deflection amount of the excitation current detected by the magnetic deflection current detection electrode is 0, that is, there is no zero offset. When the magnetic field is measured using the magnetic sensor element, the zero offset caused by the overall offset and alignment error of different structures in the preparation process can be effectively eliminated, so that the accuracy of the test can be improved and the complexity of the implementation can be reduced.

[0107] Through the above general description of the components of the magnetic sensor element according to the embodiments of the present disclosure, the following four specific embodiments will be described in detail based on the specific shape characteristics of the comb structure of the active region, the specific implementation of the magnetic deflection current detection electrode, and the positional relationship between the excitation electrode, the magnetic deflection current detection electrode, and each part of the active region.

[0108] Fig. 3 shows a schematic diagram of the structure of a magnetic sensitive element in the top view according to an embodiment of the present disclosure. In order to clearly show the structure and the positional relationship between the active area and the magnetic deflection current detection electrode and the excitation electrode, Fig. 3 shows the magnetic sensitive element in the top view, and the substrate is not shown.

[0109] As shown in Fig. 3, the magnetic sensitive element comprises a substrate, an active area, an excitation electrode, and a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode. The substrate is at the bottom layer (not shown in Fig. 3). The active area is a rectangular symmetric comb structure, which comprises a comb ridge and a plurality of comb teeth extending from one side of the comb ridge. The size and the interval of each comb tooth of the comb structure are equal, and the length of the comb ridge is greater than 3 times the width of the comb ridge. The excitation electrode is arranged on the comb ridge of the opposite side of each comb tooth close to the edge of the comb ridge, and the shape of the excitation electrode is also rectangular. The center line of the excitation electrode coincides with the center line of the opposite side, and forms an electrical contact with the comb ridge. The excitation electrode is connected to an external power source through a lead wire, and is used to apply an excitation current to the magnetic sensitive element. The magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth. Specifically, each magnetic deflection current detection positive electrode is arranged on the left side of each comb tooth, and each magnetic deflection current detection negative electrode is arranged on the right side of each comb tooth. In a specific implementation, the arrangement of the magnetic deflection current detection positive electrode and the magnetic deflection current detection negative electrode can be reversed, i.e., each magnetic deflection current detection positive electrode can be arranged on the right side of each comb tooth, and each magnetic deflection current detection negative electrode can be arranged on the left side of each comb tooth. The number of the magnetic deflection current detection positive electrodes is equal to the number of the magnetic deflection current detection negative electrodes. After being connected to each other, the magnetic deflection current detection positive electrodes form a whole magnetic deflection current detection positive electrode, and the magnetic deflection current detection negative electrodes form a whole magnetic deflection current detection negative electrode. The whole magnetic deflection current detection positive electrode and the whole magnetic deflection current detection negative electrode are connected to an external current measurement circuit through lead wires. The size of each magnetic deflection current detection positive electrode and each magnetic deflection current detection negative electrode is equal, and the positions of each magnetic deflection current detection positive electrode and each magnetic deflection current detection negative electrode on both sides of each comb tooth are also the same.

[0110] Based on the specific structure and the positional relationship between the active area, the excitation electrode, the magnetic deflection current detection positive electrode, and the magnetic deflection current detection negative electrode as described above, it can be determined that the connection resistance between the excitation electrode and the magnetic deflection current detection positive electrode and the magnetic deflection current detection negative electrode is the same, which is equivalent to two same resistances in parallel. Therefore, when there is no magnetic field, the current detected by the magnetic deflection current detection positive electrode and the magnetic deflection current detection negative electrode is the same, i.e., the deflection amount of the excitation current is 0.

[0111] In order to improve the sensitivity of the magnetic sensitive element, one way is to change the size and spacing of the comb teeth, by reducing the width and spacing of the comb teeth, increasing the number of comb teeth, so as to effectively improve the sensitivity of the magnetic sensitive element; Another way is to optimize the shape of the active area, as described above, in order to make the current magnetic deflection effect much larger than the Hall effect, the length of the comb ridge part of the comb structure of the active area is much larger than its width, so for the rectangular symmetric comb structure as shown in FIG. 3, the length of the active area is relatively long, which will lead to the size of the magnetic sensitive element being too large, making it unusable in some application scenarios.

[0112] FIG. 4 shows another schematic view of the structure of the magnetic sensitive element in the top view according to an embodiment of the present disclosure.

[0113] As shown in FIG. 4, the magnetic sensitive element includes a substrate, an active area, an excitation electrode, and a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode; the substrate is located at the bottom layer (not shown in FIG. 4); the active area is a ring-symmetric comb structure, which includes a ring-shaped comb ridge and a plurality of comb teeth extending out from the outside of the ring-shaped comb ridge. The size and spacing of each comb tooth of the comb structure are equal. The excitation electrode is arranged on the comb ridge near the comb ridge edge on the inside of the ring-shaped comb ridge (in another specific embodiment, the excitation electrode can also be arranged on the periphery of the inside of the ring-shaped comb ridge), which is also ring-shaped and forms an electrical contact with the comb ridge, and is connected to an external power source through a wire for applying an excitation current to the magnetic sensitive element; the magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth. Specifically, each magnetic deflection current detection positive electrode is arranged on the left side edge of each comb tooth, and each magnetic deflection current detection negative electrode is arranged on the right side edge of each comb tooth. Each magnetic deflection current detection positive electrode is connected to form an entire magnetic deflection current detection positive electrode, and each magnetic deflection current detection negative electrode is connected to form an entire magnetic deflection current detection negative electrode, and the entire magnetic deflection current detection positive electrode and the entire magnetic deflection current detection negative electrode are respectively connected to an external current measurement circuit through wires. Wherein, the size of each magnetic deflection current detection positive electrode and each magnetic deflection current detection negative electrode is equal, and the positions of each magnetic deflection current detection positive electrode and each magnetic deflection current detection negative electrode on both sides of each comb tooth are also the same.

[0114] The active region of the magnetic sensitive element in the embodiments of the present disclosure adopts the annular symmetric comb structure shown in FIG. 4. Because in the annular structure, the current along the radial direction only has current deflection effect and no Hall effect, the Hall effect can be completely eliminated, the current magnetic deflection effect is maximized, the size of the active region is kept at a relatively small level, the sensitivity is improved, and the size of the magnetic sensitive element is reduced, thereby achieving the technical effect of miniaturization of the component. In addition, in the annular symmetric comb structure shown in FIG. 4, the sensitivity of the magnetic sensitive element can be further improved by reducing the width of the comb teeth and the comb tooth spacing, and increasing the number of comb teeth.

[0115] In addition to the rectangular symmetric comb structure and the annular symmetric comb structure shown in FIGS. 3 and 4, a circular symmetric comb structure shown in FIG. 5 and a square symmetric comb structure shown in FIG. 6 can also be used. The rotationally symmetric structures shown in FIGS. 4-6 use the rotation current method. Because the current or magnetic field is uniformly distributed in multiple phases, the Hall effect can be completely eliminated, the current magnetic deflection effect is maximized, the zero offset is reduced or even eliminated, the sensitivity of the magnetic sensitive element is further improved, and the size of the magnetic sensitive element is reduced while achieving high sensitivity. In other specific embodiments, other shapes of symmetric comb structures can also be used. As long as the technical solutions of measuring the magnetic field by measuring the deflection amount of the excitation current based on the current magnetic deflection effect and the active region adopting the comb structure are within the protection scope of the present disclosure.

[0116] FIG. 5 shows a structure schematic diagram in the top-down direction of another magnetic sensitive element according to an embodiment of the present disclosure.

[0117] As shown in FIG. 5, the magnetic sensitive element includes a substrate, an active region, an excitation electrode, and a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode. The substrate is located at the bottom layer (not shown in FIG. 5). The difference from the magnetic sensitive element shown in FIG. 4 is that in FIG. 5, the active region is a circular symmetric comb structure, which includes a circular comb ridge and a plurality of comb teeth parallelly extending from the outside of the circular comb ridge. The excitation electrode is arranged at the center of the circular comb ridge, and the shape of the excitation electrode is also circular.

[0118] FIG. 6 shows a structure schematic diagram in the top-down direction of another magnetic sensitive element according to an embodiment of the present disclosure.

[0119] As shown in FIG. 6, the magnetic sensitive element comprises: a substrate, an active region, an excitation electrode, and a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode; the substrate is located at the bottom layer (not shown in FIG. 6); the difference from the magnetic sensitive element shown in FIG. 5 is that, in FIG. 6, the active region is a square symmetric comb structure, which comprises a square comb ridge and a plurality of comb teeth, the plurality of comb teeth extending out from the four edges of the square comb ridge. The excitation electrode is arranged at the center of the square comb ridge, and its shape is also square.

[0120] FIG. 7 shows a structural schematic diagram of a magnetic sensitive sensor according to an embodiment of the present disclosure. As shown in FIG. 7, the magnetic sensitive sensor comprises: the magnetic sensitive element according to any one of the embodiments of the present disclosure, and an excitation current deflection amount measurement module; the excitation current deflection amount measurement module is connected with the magnetic deflection current detection electrodes of the magnetic sensitive element, and is arranged to, when an excitation current is applied to the active region of the magnetic sensitive element through the excitation electrode of the magnetic sensitive element, and there is a magnetic field perpendicular to the upper plane of the active region, the excitation current deflects under the action of the magnetic field, and the deflection amount of the deflected excitation current is measured by using the magnetic deflection current detection electrodes.

[0121] FIG. 8 shows a structural schematic diagram of another magnetic sensitive sensor according to an embodiment of the present disclosure. As shown in FIG. 8, the magnetic sensitive sensor further comprises: a magnetic field measurement module, which is connected with the excitation current deflection amount measurement module; the magnetic field measurement module is arranged to measure the magnetic field according to the deflection amount of the excitation current.

[0122] According to an embodiment of the present disclosure, the measurement of the deflection amount of the deflected excitation current by using the magnetic deflection current detection electrodes comprises: detecting a first deflection current value by using the magnetic deflection current detection positive electrode of the magnetic sensitive element; detecting a second deflection current value by using the magnetic deflection current detection negative electrode of the magnetic sensitive element; determining the deflection amount of the excitation current according to the first deflection current value and the second deflection current value; wherein the deflection amount of the excitation current is the difference between the first deflection current value and the second deflection current value.

[0123] According to an embodiment of the present disclosure, the measurement of the magnetic field according to the deflection amount of the excitation current comprises: measuring the intensity of the magnetic field according to the difference between the first deflection current value and the second deflection current value. In addition, the direction of the magnetic field can also be determined according to the difference between the first deflection current value and the second deflection current value, for example, if the difference is negative, the direction of the magnetic field is opposite to that when the difference is positive.

[0124] According to an embodiment of the present disclosure, the strength of the magnetic field is linearly related to the deflection amount of the excitation current, and the measuring the magnetic field according to the deflection amount of the excitation current comprises: determining a linear proportional coefficient according to the sensitivity coefficient of the magnetic sensitive element and the current value of the excitation current; and determining the strength of the magnetic field according to the linear proportional coefficient and the deflection amount of the excitation current.

[0125] The determining the linear proportional coefficient according to the sensitivity coefficient of the magnetic sensitive element and the current value of the excitation current comprises:

[0126] The linear proportional coefficient k is determined according to the following formula:

[0127] The determining the strength of the magnetic field according to the linear proportional coefficient and the deflection amount of the excitation current comprises:

[0128] The strength B of the magnetic field is determined according to the following formula: B=k x AI

[0129] Wherein, k h represents the sensitivity coefficient of the magnetic sensitive element, which is a constant determined in advance according to the material and structure of the magnetic sensitive element and the temperature characteristics, and the higher the sensitivity of the magnetic sensitive element, the greater the sensitivity coefficient, I represents the current value of the excitation current, and AI represents the deflection amount of the excitation current.

[0130] According to an embodiment of the present disclosure, when the excitation current is applied to the active area through the excitation electrode, a constant current source is used for power supply. That is, the excitation current is a constant value, usually 1mA-1μA. The specific data can be determined according to the actual application scene and the specific structure. By using the constant current source for power supply, the provided current will not change with the change of the external environment (such as temperature, humidity), thereby ensuring the stability of the magnetic sensitive sensor in the measurement process. In addition, the error caused by the current fluctuation on the measurement result can be reduced, and a good linear relationship is maintained in the measurement process, so that the measurement result is more accurate and reliable.

[0131] In the embodiments of the present application, the excitation current deflection amount measuring module and the magnetic field measuring module can each be one or more processors, controllers or chips with a communication interface capable of implementing a communication protocol, and can also include a memory and related interfaces, a system transmission bus, etc. if necessary; the processor, controller or chip executes program-related codes to implement corresponding functions. Alternatively, the excitation current deflection amount measuring module and the magnetic field measuring module can share an integrated chip or share a processor, controller, memory, etc. The shared processor, controller or chip executes program-related codes to implement corresponding functions.

[0132] FIG. 9 shows a flow chart of a method for manufacturing a magnetic sensitive element according to an embodiment of the present disclosure. As shown in FIG. 9, the method comprises the following steps S910-S940:

[0133] In step S910, a substrate is provided, which is located at the bottom layer.

[0134] In implementing this step S910, an appropriate substrate material can be selected according to the specific application scenario and design requirements. For example, a semiconductor material with relatively high carrier mobility can be used, such as gallium nitride, silicon carbide, and low-doped silicon, to meet the subsequent processing and device operation requirements.

[0135] After the substrate is formed, the substrate can be cleaned to remove surface impurities and contaminants to ensure the quality of subsequent processes.

[0136] In step S920, an active region is formed on the substrate. The active region is a symmetric comb structure, which includes a comb ridge and a plurality of comb teeth extending from one or more sides of the comb ridge. The length of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width of the comb ridge.

[0137] In implementing this step S920, an insulating medium layer, such as silicon oxide or silicon nitride, is first deposited on the cleaned substrate surface. Then, a comb structure active region pattern is defined by photolithography or mask process. After that, the insulating medium layer of the active region is removed. Finally, the required doping layer is formed on the active region pattern using ion implantation method to form the preliminary structure of the comb ridge and comb teeth. Then, the unwanted material parts are removed by etching, peeling or other processes to form the precise comb structure active region.

[0138] In step S930, an excitation electrode is formed. The excitation electrode is arranged on the comb ridge or the periphery of the comb ridge and forms an electrical contact with the comb ridge. The excitation electrode is connected to an external power source through a wire to apply an excitation current to the magnetic sensitive element.

[0139] In forming the excitation electrode on the comb ridge, the pattern of the excitation electrode can be defined on the comb ridge by photolithography or mask process, and a heavily doped region is formed by ion implantation. Then, a conductive material such as gold, silver, copper, etc. is deposited on the heavily doped region using metal deposition technology (such as sputtering, evaporation, etc.). In addition, the electrical contact performance between the excitation electrode and the comb ridge can be improved by heat treatment or other processes to ensure smooth current flow. Finally, the excitation electrode is connected to an external power source through a wire to ensure that the magnetic sensitive element can be provided with stable excitation current.

[0140] When the excitation electrode is formed around the comb teeth, the excitation electrode is formed on the substrate through the insulating medium layer in addition to being formed on the comb teeth.

[0141] In step S940, a magnetic deflection current detection electrode is formed. The magnetic deflection current detection electrode is arranged on both sides of the comb teeth and is used to detect the current change generated after the excitation current is deflected by the magnetic field.

[0142] When the magnetic deflection current detection electrode is formed, the pattern of the magnetic deflection current detection electrode can also be defined on both sides of the comb teeth by means of photolithography or mask process, and the ion implantation method is used to form a heavily doped region. Then, the conductive material is deposited on the heavily doped region by using the metal deposition technology. In addition, when the magnetic deflection current detection electrode is formed, the spacing and positional relationship between the magnetic deflection current detection electrode and the comb teeth are ensured to meet the design requirements, so as to accurately detect the current change.

[0143] It should be noted that the execution of steps S930 and S940 is not sequential, and the selection of step S930 or step S940 can be made according to the specific application scenario and design requirements.

[0144] According to an embodiment of the present disclosure, the magnetic deflection current detection electrode includes a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, and the magnetic deflection current detection electrode is arranged on both sides of the comb teeth, including:

[0145] The magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth. After the magnetic deflection current detection positive electrodes are connected to each other and the magnetic deflection current detection negative electrodes are connected to each other, they are respectively connected to the external current measurement circuit through the lead wire.

[0146] According to an embodiment of the present disclosure, the comb structure is a symmetric comb structure.

[0147] According to an embodiment of the present disclosure, the symmetric comb structure includes an axisymmetric comb structure and / or a rotationally symmetric comb structure. The axisymmetric comb structure includes a rectangular symmetric comb structure. The rotationally symmetric comb structure includes a ring-shaped symmetric comb structure, a circular symmetric comb structure, or a regular polygon symmetric comb structure.

[0148] According to an embodiment of the present disclosure, the size and spacing of each comb tooth of the comb structure are equal.

[0149] According to an embodiment of the present disclosure, the magnetic deflection current detection electrode is multiple, and the size of each magnetic deflection current detection electrode is equal.

[0150] According to an embodiment of the present disclosure, the excitation electrode is one.

[0151] According to an embodiment of the present disclosure, the excitation electrode electrically contacts the entire periphery of the comb ridge, or the excitation electrode is arranged at the center of the comb ridge, or the excitation electrode is arranged on the periphery of the comb ridge or near the edge of the comb ridge on the opposite sides of each comb tooth, and the center line of the excitation electrode coincides with the center line of the opposite sides.

[0152] According to an embodiment of the present disclosure, the substrate is a semiconductor substrate, and the substrate is opposite in doping type to the active region.

[0153] According to an embodiment of the present disclosure, the length of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width of the comb ridge.

[0154] In addition to the steps S910-S940, the preparation method of the magnetic sensor element further includes packaging and detection and calibration of the magnetic sensor element to protect the internal structure and circuit and improve the stability and reliability of the device. When detecting and calibrating the magnetic sensor element, specifically including: performance testing of the prepared magnetic sensor element, including detection of excitation current application, magnetic field response and other indicators, and calibration according to the test results to ensure that the performance of the magnetic sensor element meets the design requirements.

[0155] The present disclosure also provides an electronic device comprising the magnetic sensor element described in the embodiments of the present disclosure.

[0156] The present disclosure also provides a chip comprising the magnetic sensor element described in the embodiments of the present disclosure.

[0157] The present disclosure also provides a chip comprising the magnetic sensor element described in the embodiments of the present disclosure.

[0158] The present disclosure also provides an electronic device comprising the magnetic sensor element described in the embodiments of the present disclosure.

[0159] The present disclosure also provides an electronic device comprising the magnetic sensor element described in the embodiments of the present disclosure.

[0160] According to the technical scheme provided by the embodiments of the present disclosure, the excitation electrode, the magnetic deflection current detection electrode and the active region with a comb structure are formed in the magnetic sensor element, then the excitation electrode is used to apply excitation current to the active region, under the action of the magnetic field, the excitation current is deflected, the deflection amount of the deflected excitation current is detected by the magnetic deflection current detection electrode by using the current magnetic deflection effect, since the deflection amount is related to the strength and direction of the magnetic field, finally the magnetic field is measured according to the deflection amount of the excitation current, thereby improving the sensitivity of the sensor, and thus improving the measurement accuracy in the measurement application scenario.

[0161] The above description is merely a preferred embodiment of this disclosure and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this disclosure is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above-described features with (but not limited to) technical features disclosed in this disclosure that have similar functions.

Claims

1. A magnetic sensor element, characterized by The magnetic sensitive element comprises a substrate, an active region, an excitation electrode and a magnetic deflection current detection electrode; The substrate is located at the bottom layer; The active region is formed on the substrate; wherein the active region is a symmetric comb-shaped structure, the symmetric comb-shaped structure comprises a comb ridge and a plurality of comb teeth, the plurality of comb teeth extend from one side or more sides of the comb ridge; wherein when the symmetric comb-shaped structure is a non-rotationally symmetric comb-shaped structure, the length dimension of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width dimension of the comb ridge; The excitation electrode is arranged on the comb ridge or the periphery of the comb ridge and forms an electrical contact with the comb ridge, and is connected to an external power source through a lead wire, for applying an excitation current to the magnetic sensitive element; The magnetic deflection current detection electrode is arranged on both sides of the comb tooth, for detecting the current change generated after the excitation current is deflected due to the magnetic field.

2. The magnetic sensor element according to claim 1, characterized in that The magnetic deflection current detection electrode comprises a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, and the magnetic deflection current detection electrode is arranged on both sides of the comb tooth, comprising: The magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth, and each magnetic deflection current detection positive electrode is connected to each other and each magnetic deflection current detection negative electrode is connected to each other, and is connected to an external current measurement circuit through a lead wire.

3. The magnetic sensor element according to claim 1, wherein The magnetic deflection current detection electrode is a plurality of magnetic deflection current detection electrodes, and the size of each magnetic deflection current detection electrode is equal.

4. The magnetic sensitive element according to claim 1, wherein The excitation electrode electrically contacts the entire periphery of the comb ridge, or The excitation electrode is arranged at the center of the comb ridge, or The excitation electrode is arranged on the periphery of the comb ridge or the comb ridge near the edge of the comb ridge on the opposite sides of each comb tooth, and the center line of the excitation electrode coincides with the center line of the opposite sides.

5. The magnetic sensitive element according to claim 1, wherein The symmetric comb-shaped structure comprises an axisymmetric comb-shaped structure and / or a rotationally symmetric comb-shaped structure, the axisymmetric comb-shaped structure comprises a rectangular symmetric comb-shaped structure, and the rotationally symmetric comb-shaped structure comprises a ring-shaped symmetric comb-shaped structure, a circular symmetric comb-shaped structure or a regular polygon symmetric comb-shaped structure.

6. The magnetic sensitive element according to claim 1, wherein The size and spacing of each comb tooth of the symmetric comb-shaped structure are equal.

7. The magnetic sensitive element according to claim 1, wherein The substrate is a semiconductor substrate, and the substrate and the active region have opposite doping types.

8. A magnetic sensor, characterized by The magnetic sensitive element according to any one of claims 1 to 7; and An excitation current deflection amount measurement module is connected to the magnetic deflection current detection electrode of the magnetic sensitive element, and is arranged to apply an excitation current to the active region of the magnetic sensitive element through the excitation electrode of the magnetic sensitive element when a magnetic field perpendicular to the upper plane of the active region exists, the excitation current is deflected under the action of the magnetic field, and the deflection amount of the deflected excitation current is measured by the magnetic deflection current detection electrode. ​ ​ 9. The magnetic sensor of claim 8, wherein, The magnetic sensor further comprises a magnetic field measurement module connected with the excitation current deflection measurement module; The magnetic field measurement module is configured to measure the magnetic field according to the deflection of the excitation current.

10. The magnetic sensor of claim 9, wherein, The deflection of the excitation current after the excitation current is deflected is measured by using the magnetic deflection current detection electrode, comprising: A first deflection current value is detected by using the magnetic deflection current detection positive electrode of the magnetic sensitive element; A second deflection current value is detected by using the magnetic deflection current detection negative electrode of the magnetic sensitive element; The deflection of the excitation current is determined according to the first deflection current value and the second deflection current value; wherein the deflection of the excitation current is the difference between the first deflection current value and the second deflection current value; The magnetic field is measured according to the deflection of the excitation current, comprising: The intensity of the magnetic field is measured according to the difference between the first deflection current value and the second deflection current value.

11. The magnetic sensor of claim 9, wherein, The intensity of the magnetic field and the deflection of the excitation current are in a linear relationship, and the magnetic field is measured according to the deflection of the excitation current, comprising: A linear proportionality coefficient is determined according to the sensitivity coefficient of the magnetic sensitive element and the current value of the excitation current; The intensity of the magnetic field is determined according to the linear proportionality coefficient and the deflection of the excitation current.

12. The magnetic sensor of claim 11, wherein, The linear proportionality coefficient is determined according to the sensitivity coefficient of the magnetic sensitive element and the current value of the excitation current, comprising: The linear proportionality coefficient k is determined according to the following formula: wherein k h represents a sensitivity coefficient of the magnetic sensitive element, and I represents a current value of the excitation current.

13. The magnetic sensor of claim 12, wherein, The intensity of the magnetic field is determined according to the linear proportionality coefficient and the deflection of the excitation current, comprising: The intensity of the magnetic field B is determined according to the following formula: B=k*ΔI Wherein, ΔI represents the deflection of the excitation current.

14. The magnetic sensor of claim 8, wherein, When the excitation current is applied to the active area through the excitation electrode, a constant current source is used for power supply.

15. A method for producing a magnetic sensor element, characterized by, The preparation method comprises: A substrate is provided, which is located at the bottom layer; An active area is formed on the substrate; the active area is a symmetric comb structure, which comprises a comb ridge and a plurality of comb teeth extending from one side or more sides of the comb ridge; wherein when the symmetric comb structure is a non-rotationally symmetric comb structure, the length dimension of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width dimension of the comb ridge; An excitation electrode is formed; the excitation electrode is arranged on the comb ridge or the periphery of the comb ridge and forms electrical contact with the comb ridge, and is connected with an external power supply through a lead wire for applying an excitation current to the magnetic sensitive element; A magnetic deflection current detection electrode is formed; the magnetic deflection current detection electrode is arranged on both sides of the comb tooth and is used to detect the current change generated after the excitation current is deflected due to the action of the magnetic field.

16. The method of claim 15, wherein, The magnetic deflection current detection electrode comprises a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, which are arranged on both sides of the comb tooth, comprising: The magnetic deflection current detection positive electrode is arranged on the first side of each comb tooth, and the magnetic deflection current detection negative electrode is arranged on the second side of each comb tooth; each magnetic deflection current detection positive electrode is connected with each other and each magnetic deflection current detection negative electrode is connected with each other, and then connected with an external current measurement circuit through a lead wire.

17. The preparation method according to claim 15, characterized in that, The magnetic deflection current detection electrodes are multiple, and the sizes of each magnetic deflection current detection electrode are equal.

18. The method of claim 15, wherein, the excitation electrode electrically contacts the entire periphery of the comb teeth, or the excitation electrode is disposed at the center of the comb teeth, or the excitation electrode is disposed on the periphery of the comb teeth or the comb teeth at the opposite sides of each comb tooth, and the center line of the excitation electrode coincides with the center line of the opposite sides.

19. The method of claim 15, wherein, the symmetric comb structure includes an axisymmetric comb structure and / or a rotationally symmetric comb structure, the axisymmetric comb structure includes a rectangular symmetric comb structure, and the rotationally symmetric comb structure includes a ring symmetric comb structure, a circular symmetric comb structure, or a regular polygon symmetric comb structure.

20. The method of claim 15, wherein, the sizes and the intervals of each comb tooth of the symmetric comb structure are equal.

21. The method of claim 15, wherein, the substrate is a semiconductor substrate, and the substrate is opposite to the doping type of the active region.

22. An electronic device, comprising: The magnetic sensor includes the magnetic sensor element of any one of claims 1-7.

23. A chip, characterized by The magnetic sensor includes the magnetic sensor element of any one of claims 1-7.

24. A chip, characterized by The magnetic sensor includes the magnetic sensor element of claim 8.

25. An electronic device, comprising: The magnetic sensor includes the magnetic sensor element of any one of claims 1-7.

26. An electronic device, comprising: The magnetic sensor includes the magnetic sensor element of claim 8.

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