Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device comprising: a substrate including a substrate surface; a first end surface light-emitting element disposed on the substrate, including a first front light-emitting surface and a first rear light-emitting surface that are both end surfaces in a first direction intersecting a thickness direction perpendicular to the substrate surface, and configured such that light is emitted from both the first front light-emitting surface and the first rear light-emitting surface; a first reflector having a first reflection surface facing the first front light-emitting surface; a second reflector having a second reflection surface facing the first rear light-emitting surface; and a translucent sealing member disposed in a region surrounded by the first reflector and the second reflector and sealing the first end surface light-emitting element.

Description

Semiconductor light-emitting device

[0001] The present disclosure relates to semiconductor light emitting devices.

[0002] 2. Description of the Related Art Conventionally, semiconductor light emitting devices equipped with light emitting diodes (LEDs) as light sources have been known as light source devices mounted in various electronic devices (see, for example, Patent Document 1).

[0003] JP 2013-41866 A

[0004] [Summary] There is room for improvement in the radiation pattern characteristics of light emitted from semiconductor light emitting devices.

[0005] A semiconductor light emitting device according to one aspect of the present disclosure includes a substrate including a substrate surface, a first edge light emitting element located on the substrate and including a first front light emitting surface and a first rear light emitting surface which are both end surfaces in a first direction intersecting a thickness direction perpendicular to the substrate surface, and configured to emit light from the first front light emitting surface and the first rear light emitting surface, a first reflector having a first reflecting surface facing the first front light emitting surface, a second reflector having a second reflecting surface facing the first rear light emitting surface, and a translucent sealing member disposed within an area surrounded by the first reflector and the second reflector and sealing the first edge light emitting element.

[0006] FIG. 1 is a schematic perspective view of a semiconductor light emitting device according to a first embodiment. FIG. 2 is a schematic plan view of the semiconductor light emitting device of FIG. 1. FIG. 3 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F3-F3 in FIG. 2. FIG. 4 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F4-F4 in FIG. 2. FIG. 5 is an enlarged cross-sectional view of the first edge light emitting element and the periphery of the sealing member of the semiconductor light emitting device according to the first embodiment. FIG. 6 is a graph showing far field patterns in semiconductor light emitting devices according to the first embodiment and a comparative example. FIG. 7 is a graph showing far field patterns in the semiconductor light emitting device according to the first embodiment. FIG. 8 is a schematic plan view of a semiconductor light emitting device according to a second embodiment. FIG. 9 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F9-F9 in FIG. 8. FIG. 10 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F10-F10 in FIG. 8. FIG. 11 is a graph showing far field patterns in the semiconductor light emitting device according to the second embodiment. FIG. 12 is a graph showing far field patterns in the semiconductor light emitting device according to the second embodiment. FIG. 13 is a schematic cross-sectional view of a semiconductor light emitting device of a third embodiment. FIG. 14 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device of the third embodiment. FIG. 15 is a schematic cross-sectional view of a semiconductor light emitting device of a fourth embodiment. FIG. 16 is a schematic end view of a semiconductor light emitting device of a fifth embodiment. FIG. 17 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device of the fifth embodiment. FIG. 18 is a schematic cross-sectional view of a semiconductor light emitting device of a sixth embodiment. FIG. 19 is a schematic plan view of a substrate in the semiconductor light emitting device of the sixth embodiment. FIG. 20 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device of the sixth embodiment. FIG. 21 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device of the sixth embodiment. FIG. 22 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device. FIG. 23 is a schematic end view showing a modified example of the semiconductor light emitting device. FIG. 24 is an enlarged cross-sectional view of the first edge light emitting element and the periphery of the sealing member of the semiconductor light emitting device of FIG. 23. FIG. 25 is a schematic plan view showing a modified example of the semiconductor light emitting device. Fig. 26 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F26-F26 in Fig. 25. Fig. 27 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device. Fig. 28 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device. Fig. 29 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device.Fig. 30 is a schematic plan view showing a modified example of the semiconductor light emitting device. Fig. 31 is a schematic plan view showing a modified example of the semiconductor light emitting device. Fig. 32 is a schematic perspective view showing a modified example of the semiconductor light emitting device. Fig. 33 is a schematic plan view showing a modified example of the semiconductor light emitting device. Fig. 34 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F34-F34 in Fig. 33.

[0007] DETAILED DESCRIPTION Hereinafter, several embodiments of the semiconductor light emitting device of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, for ease of understanding, hatching lines may be omitted in cross-sectional views. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered as limiting the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying example embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The term "planar view" used in the present disclosure refers to viewing the semiconductor light emitting device in the Z-axis direction of the mutually orthogonal X, Y, and Z axes shown in Figure 1. For ease of explanation, the direction along the Z-axis direction will be referred to as the "Z-direction," the direction along the X-axis direction as the "X-direction," and the direction along the Y-axis direction as the "Y-direction." In the present disclosure, the X-direction corresponds to the "first direction," and the Y-direction corresponds to the "second direction."

[0010] First Embodiment A semiconductor light-emitting device 10 according to a first exemplary embodiment of the present disclosure will be described with reference to FIGS. 1 to 5. FIG. 1 is a schematic perspective view of the semiconductor light-emitting device 10 according to the first embodiment. Note that first to fourth reflectors 30, 32, 34, and 36, which will be described later, are indicated by two-dot chain lines in FIG. 1. FIG. 2 is a schematic plan view of the semiconductor light-emitting device 10 of FIG. 1. Note that the sealing member 40 has been omitted from FIG. 2 for ease of understanding. FIG. 3 is a cross-sectional view of the semiconductor light-emitting device 10 taken along line F3-F3 in FIG. 2. FIG. 4 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F4-F4 in FIG. 2. FIG. 5 is an enlarged cross-sectional view of the first edge-emitting element and the sealing member of the semiconductor light-emitting device according to the first embodiment.

[0011] (Description of the Substrate) As shown in Figures 1 to 4, the semiconductor light-emitting device 10 includes a substrate 12. The substrate 12 is flat and has a thickness in the Z direction. In this disclosure, the term "thickness direction" refers to the thickness direction of the substrate 12 unless otherwise specified. The thickness direction coincides with the Z direction. In other words, the Z direction can be rephrased as the thickness direction of the substrate 12.

[0012] As shown in Fig. 3, the substrate 12 includes a substrate front surface 12A and a substrate back surface 12B as both end surfaces in the Z direction. The substrate front surface 12A and the substrate back surface 12B may be rectangular. In the first embodiment, the substrate front surface 12A and the substrate back surface 12B are substantially square in shape with equal dimensions in the X direction and the Y direction. The shapes of the substrate front surface 12A and the substrate back surface 12B are not limited to those described above. For example, the shapes of the substrate front surface 12A and the substrate back surface 12B may be rectangular in shape with different dimensions in the X direction and the Y direction.

[0013] 2, the substrate 12 includes first to fourth substrate side surfaces 12X1, 12X2, 12Y1, and 12Y2 that connect the substrate front surface 12A and the substrate back surface 12B. The first substrate side surface 12X1 and the second substrate side surface 12X2 are both end surfaces of the substrate 12 in the Y direction. The third substrate side surface 12Y1 and the fourth substrate side surface 12Y2 are both end surfaces of the substrate 12 in the X direction.

[0014] The substrate 12 is made of, for example, an insulating material. For example, the substrate 12 may be made of glass epoxy resin. In another example, the substrate 12 may be made of a material containing ceramic. Examples of materials containing ceramic include aluminum nitride (AlN) and alumina (Al ２ O ３ When the substrate 12 is made of a material containing ceramic, the heat dissipation properties of the substrate 12 are improved, and the temperature of the semiconductor light emitting device 10 can be prevented from becoming excessively high.

[0015] (Description of Edge Light Emitting Element) The semiconductor light emitting device 10 includes a first edge light emitting element 14 located on the substrate 12. The first edge light emitting element 14 functions as a light source for the semiconductor light emitting device 10. The first edge light emitting element 14 may be an edge-emitting laser element. The first edge light emitting element 14 may be a laser diode that emits light in a predetermined wavelength band. The configuration of the first edge light emitting element 14 is not particularly limited. The first edge light emitting element 14 may be, for example, a Fabry-Perot laser diode element.

[0016] The first edge light emitting element 14 has a flat plate shape with a thickness in the Z direction. In a plan view, the first edge light emitting element 14 has a rectangular shape with a long side and a short side. In the first embodiment, the first edge light emitting element 14 is arranged so that the long side is aligned with the X direction and the short side is aligned with the Y direction.

[0017] As shown in FIGS. 2 to 4, the first edge light emitting element 14 includes a front surface 14A, a rear surface 14B, and first to fourth side surfaces 14X1, 14X2, 14Y1, and 14Y2 connecting the front surface 14A and the rear surface 14B.

[0018] 3, the element front surface 14A and the element back surface 14B are both end surfaces in the Z direction of the first edge surface light emitting element 14. The element front surface 14A faces the same side as the substrate front surface 12A of the substrate 12, and the element back surface 14B faces the substrate front surface 12A.

[0019] 2, the first element side surface 14X1 and the second element side surface 14X2 are both end surfaces in the X direction of the first edge light emitting element 14. In other words, the first element side surface 14X1 and the second element side surface 14X2 can be said to be both end surfaces in the longitudinal direction of the first edge light emitting element 14.

[0020] 4, the third element side surface 14Y1 and the fourth element side surface 14Y2 are both end surfaces in the Y direction of the first edge light emitting element 14. In other words, the third element side surface 14Y1 and the fourth element side surface 14Y2 can be said to be both end surfaces in the short direction of the first edge light emitting element 14.

[0021] As shown in Fig. 3 , in the first embodiment, the first element side surface 14X1 is the end surface of the first edge light emitting element 14 in the X direction that faces the same side as the first substrate side surface 12X1. The second element side surface 14X2 is the end surface of the first edge light emitting element 14 in the X direction that faces the same side as the second substrate side surface 12X2. The third element side surface 14Y1 is the end surface of the first edge light emitting element 14 in the Y direction that faces the same side as the third substrate side surface 12Y1. The fourth element side surface 14Y2 is the end surface of the first edge light emitting element 14 in the Y direction that faces the same side as the fourth substrate side surface 12Y2.

[0022] Here, the first element side surface 14X1 constitutes a first front light-emitting surface FS1 that emits laser light. The first element side surface 14X1 (first front light-emitting surface FS1) faces the same side as the first substrate side surface 12X1. Therefore, the first edge light-emitting element 14 emits first front-emission light L1F from the first front-emission surface FS1. The first front-emission light L1F travels in the X direction as a whole and is emitted in a direction away from the first front-emission surface FS1.

[0023] The second element side surface 14X2 constitutes a first rear-emitting surface BS1 that emits laser light. The second element side surface 14X2 (first rear-emitting surface BS1) faces the same side as the second substrate side surface 12X2. In other words, the first rear-emitting surface BS1 faces the opposite direction from the first front-emitting surface FS1. Therefore, the first edge-emitting element 14 emits first rear-emitting light L1B from the first rear-emitting surface BS1. The first rear-emitting light L1B travels in the X direction as a whole and is emitted in a direction away from the first rear-emitting surface BS1. In this case, both emitted lights L1F and L1B are emitted in directions away from each other.

[0024] The first front light-emitting surface FS1 and the first rear light-emitting surface BS1 are both end surfaces of the first edge light-emitting element 14 in the X direction intersecting with the thickness direction perpendicular to the substrate surface 12A. The first edge light-emitting element 14 is configured to emit light from both the first front light-emitting surface FS1 and the first rear light-emitting surface BS1.

[0025] The first edge light emitting element 14 may be configured to emit light of different intensities from the first front light emitting surface FS1 and the first rear light emitting surface BS1. In other words, the first edge light emitting element 14 may be configured so that the first front emitted light L1F and the first rear emitted light L1B have different intensities. This allows the radiation pattern characteristics of the semiconductor light emitting device 10 to be adjusted to desired characteristics. In one example, the radiation pattern characteristics of the semiconductor light emitting device 10 can be adjusted to improve symmetry in the Y direction by varying the intensity of the emitted light depending on the difference between the distance between the first front light emitting surface FS1 and the first reflector 30 (described later) and the distance between the first rear light emitting surface BS1 and the second reflector 32 (described later). In another example, it may be desirable to bias the radiation pattern characteristics of the semiconductor light emitting device 10. By configuring the first front light emitting surface FS1 and the first rear light emitting surface BS1 to emit light of different intensities, the relationship between the radiation angle and the intensity can be adjusted to desired characteristics.

[0026] The first edge light emitting element 14 may be configured to emit light of the same intensity from the first front light emitting surface FS1 and the first rear light emitting surface BS1. In other words, the first edge light emitting element 14 may be configured so that the first front emitted light L1F and the first rear emitted light L1B have the same intensity. This results in the same intensity of light emitted on both sides in the X direction. This improves the symmetry of the radiation pattern characteristics of the semiconductor light emitting device 10 in the X direction.

[0027] The first edge light emitting element 14 has a front electrode 16A provided on the front surface 14A of the element and a back electrode 16B provided on the back surface 14B of the element. In one example, the front electrode 16A may constitute an anode electrode of the first edge light emitting element 14. The back electrode 16B may constitute a cathode electrode of the first edge light emitting element 14.

[0028] 2, in a plan view, the element surface electrode 16A may have a rectangular shape with its longitudinal direction in the X direction and its lateral direction in the Y direction. The element surface electrode 16A may be provided inside the outer periphery of the element surface 14A of the first edge-emitting element 14.

[0029] The shape and position of the element surface electrode 16A are not limited to those described above. The element surface electrode 16A may cover the entire element surface 14A. The element surface electrode 16A may cover a portion of the element surface 14A. In other words, a portion of the element surface 14A may be exposed from the element surface electrode 16A. The element surface electrode 16A may be rectangular with the Y direction as the longitudinal direction and the X direction as the lateral direction. The element surface electrode 16A may also be circular, polygonal, or the like.

[0030] As shown in FIG. 3 , the back surface electrode 16B may be provided over the entire back surface 14B of the first edge-emitting element 14 in the Y direction. The back surface electrode 16B may cover the entire back surface 14B in the X direction. That is, the back surface electrode 16B may cover the entire back surface 14B. In another example, although not shown, the back surface electrode 16B may cover a portion of the back surface 14B. In other words, a portion of the back surface 14B may be exposed from the back surface electrode 16B. In one example, the back surface electrode 16B may be provided inside the outer periphery of the back surface 14B in the X direction. The back surface electrode 16B may be rectangular, circular, or regular polygonal in plan view. The electrical connection between the front surface electrode 16A and the back surface electrode 16B will be described later.

[0031] (Explanation of electrodes and wiring) As shown in Figures 2 and 3, the semiconductor light-emitting device 10 may include a surface electrode 20 located on the substrate surface 12A, a back electrode 22 located on the substrate back surface 12B, a connection portion 24 connecting the surface electrode 20 and the back electrode 22, and a first wire W1.

[0032] The surface electrode 20 may include a first surface electrode 20A and a second surface electrode 20B. The first surface electrode 20A and the second surface electrode 20B are spaced apart from each other. In the first embodiment, the first surface electrode 20A and the second surface electrode 20B are spaced apart in the X direction. The first surface electrode 20A is located closer to the first substrate side surface 12X1 of the substrate 12. The second surface electrode 20B is located closer to the second substrate side surface 12X2 of the substrate 12. Each surface electrode 20 may be flush with the substrate surface 12A or may protrude from the substrate surface 12A.

[0033] The first surface electrode 20A may be connected to the first edge light emitting element 14 by a first wire W1. In particular, the first surface electrode 20A may be connected to the element surface electrode 16A of the first edge light emitting element 14 by the first wire W1.

[0034] The first wire W1 may be made of, for example, gold (Au), silver (Ag), aluminum (Al), copper (Cu), or the like. The first wire W1 may be, for example, a bonding wire provided by a wire bonding device. The bonded portion of the first wire W1 with the first surface electrode 20A may be the first bonded portion, and the bonded portion with the element surface electrode 16A may be the second bonded portion. This allows the height (maximum height) of the first wire W1 to be lower than in a configuration in which the bonded portion of the first wire W1 with the element surface electrode 16A is the first bonded portion, and the bonded portion with the first surface electrode 20A is the second bonded portion.

[0035] 2 , in a plan view, the first surface electrode 20A may include a strip-shaped band portion 20A1 extending in the Y direction and a protrusion portion 20A2 extending in one direction in the X direction from both ends of the band portion 20A1 in the Y direction. The band portion 20A1 may be located at an end of the substrate surface 12A closer to the first substrate side surface 12X1. The protrusion portion 20A2 may extend from both ends of the band portion 20A1 in the X direction in a direction from the first substrate side surface 12X1 toward the second substrate side surface 12X2 of the substrate 12. The protrusion portion 20A2 may be connected to the element surface electrode 16A of the first edge-emitting element 14 by a first wire W1.

[0036] The first edge light emitting element 14 may be mounted on the second surface electrode 20B. In the first embodiment, the first edge light emitting element 14 is mounted on the second surface electrode 20B via a submount substrate 26 (described later). The second surface electrode 20B is electrically connected to a back surface electrode 16B (see FIG. 3 ) of the first edge light emitting element 14.

[0037] 2, in a plan view, the second surface electrode 20B may include a main portion 20B1 located closer to the second substrate side surface 12X2 of the substrate 12, and a protrusion 20B2 extending in the X direction from near the center of the main portion 20B1 in the Y direction. In the first embodiment, in a plan view, the main portion 20B1 covers the entire region surrounded by the first to fourth reflectors 30, 32, 34, and 36 described below, which is closer to the second reflector 32 than the center in the X direction.

[0038] The convex portion 20B2 is located near the center in the Y direction, corresponding to the first surface electrode 20A including the protrusions 20A2 on both sides in the Y direction. In other words, it can be said that the convex portion 20B2 is provided because the second surface electrode 20B is recessed on both sides in the Y direction, corresponding to the first surface electrode 20A including the protrusions 20A2 on both sides in the Y direction. In the first embodiment, the first edge light emitting element 14 and the submount substrate 26 are provided across the main portion 20B1 and the convex portion 20B2 in a plan view.

[0039] 3 , the back surface electrode 22 is used as an electrode for connecting the semiconductor light emitting device 10 to a mounting substrate when the semiconductor light emitting device 10 is mounted on the mounting substrate. The back surface electrode 22 may include a first back surface electrode 22A and a second back surface electrode 22B. The first back surface electrode 22A and the second back surface electrode 22B may be provided separately. The first back surface electrode 22A may be electrically connected to the first surface electrode 20A. The second back surface electrode 22B may be electrically connected to the second surface electrode 20B. The back surface electrode 22 may be flush with the substrate back surface 12B or may protrude from the substrate back surface 12B.

[0040] The connection portion 24 may penetrate the substrate 12. The connection portion 24 may be located between the front surface electrode 20 and the back surface electrode 22 in the Z direction. The connection portion 24 may include a first connection portion 24A and a second connection portion 24B. The first connection portion 24A and the second connection portion 24B may be provided separately. The first connection portion 24A may connect the first front surface electrode 20A and the first back surface electrode 22A. The second connection portion 24B may connect the second front surface electrode 20B and the second back surface electrode 22B.

[0041] In the first embodiment, the first surface electrode 20A, the first back surface electrode 22A, and the first connection portion 24A are integrally formed. The second surface electrode 20B, the second back surface electrode 22B, and the second connection portion 24B are integrally formed. The surface electrode 20, the back surface electrode 22, and the connection portion 24 may be made of a conductive material containing, for example, Cu, Al, or the like.

[0042] The number, size, shape, material, and electrical connection relationship of the front electrodes 20, back electrodes 22, and connecting portions 24 can be changed as desired depending on the desired wiring pattern, heat dissipation, manufacturing costs, and the like.

[0043] 1 and 3 , the semiconductor light emitting device 10 may include a submount substrate 26 located between the substrate 12 and the first edge light emitting element 14 in the Z direction. Specifically, the submount substrate 26 may be located between the substrate front surface 12A and the element back surface 14B. In the first embodiment, the submount substrate 26 is a flat plate having a thickness in the Z direction. In a plan view, the submount substrate 26 is rectangular with the X direction as the longitudinal direction and the Y direction as the lateral direction.

[0044] As shown in Figures 3 and 4, in the first embodiment, the submount substrate 26 includes a submount surface 26A, a submount back surface 26B, and first to fourth submount side surfaces 26X1, 26X2, 26Y1, and 26Y2. The submount surface 26A and the submount back surface 26B are both end surfaces of the submount substrate 26 in the Z direction. The submount surface 26A is an end surface facing the same direction as the substrate surface 12A and the element surface 14A. The submount surface 26A faces the element back surface 14B of the first edge light emitting element 14. The submount back surface 26B is an end surface facing the same direction as the substrate back surface 12B and the element back surface 14B. The submount back surface 26B faces the substrate surface 12A.

[0045] The first submount side surface 26X1 is one of the two end surfaces of the first submount side surface 26X1 in the X direction that faces the same side as the first substrate side surface 12X1 and the first element side surface 14X1. The second submount side surface 26X2 is one of the two end surfaces of the first submount side surface 26X1 in the X direction that faces the same side as the second substrate side surface 12X2 and the second element side surface 14X2. The third submount side surface 26Y1 is one of the two end surfaces of the first submount side surface 26X1 in the Y direction that faces the same side as the third substrate side surface 12Y1 and the third element side surface 14Y1. The fourth submount side surface 26Y2 is one of the two end surfaces of the first submount side surface 26X1 in the Y direction that faces the same side as the fourth substrate side surface 12Y2 and the fourth element side surface 14Y2.

[0046] In one example, the submount substrate 26 may be made of a conductive material. The submount substrate 26 may be made of a material containing, for example, Cu, Al, etc. In another example, the submount substrate 26 may be made of a substrate portion made of an insulating material and through-wirings that penetrate the substrate portion in the Z direction.

[0047] The material constituting the submount substrate 26 can be determined taking into consideration factors such as heat dissipation properties and a thermal expansion coefficient. By constructing the submount substrate 26 from a material with greater heat dissipation properties than the first edge-emitting element 14, heat is more easily transferred from the first edge-emitting element 14 to the submount substrate 26. This improves the heat dissipation properties of the semiconductor light-emitting device 10. Furthermore, the submount substrate 26 can be constructed from a material with a thermal expansion coefficient closer to that of the first edge-emitting element 14 than that of the surface electrode 20. This reduces the effects of differences in the thermal expansion coefficients of the components in the semiconductor light-emitting device 10.

[0048] The submount substrate 26 may be connected to the first edge light emitting element 14. In the first embodiment, a submount surface 26A of the submount substrate 26 is connected to an element back surface 14B of the first edge light emitting element 14. The submount surface 26A and the element back surface 14B may be connected by, for example, a conductive bonding material SD1. The conductive bonding material SD1 may be silver paste, solder, or the like.

[0049] The submount substrate 26 may be connected to the surface electrode 20. In the first embodiment, the submount back surface 26B of the submount substrate 26 is connected to the second surface electrode 20B. The submount substrate 26 and the surface electrode 20 may be connected by, for example, a conductive bonding material SD2. In detail, the conductive bonding material SD2 connects the submount back surface 26B and the second surface electrode 20B. The conductive bonding material SD2 may be silver paste, solder, or the like.

[0050] The conductive bonding material SD1 that bonds the first edge light emitting element 14 to the submount substrate 26 and the conductive bonding material SD2 that bonds the submount substrate 26 to the surface electrode 20 may be the same conductive bonding material or different conductive bonding materials. For example, when the conductive bonding material SD1 is silver paste, the conductive bonding material SD2 may be the same silver paste or a different conductive bonding material such as solder.

[0051] In the first embodiment, the surface electrode 20, the submount substrate 26, and the first edge light emitting element 14 are stacked in this order in the Z direction. The submount substrate 26 is mounted on the surface electrode 20. The first edge light emitting element 14 is mounted on the submount substrate 26. The semiconductor light emitting device 10 does not necessarily have to include the submount substrate 26. The first edge light emitting element 14 may be mounted on the surface electrode 20.

[0052] 3, the semiconductor light emitting device 10 includes a first reflector 30 and a second reflector 32. The first reflector 30 and the second reflector 32 may be located on the substrate 12. The first reflector 30 and the second reflector 32 are provided on either side of the first edge light emitting element 14 in the X direction, spaced apart from each other.

[0053] The first reflector 30 and the second reflector 32 may be made of a material with a relatively high reflectivity. The first reflector 30 and the second reflector 32 may be made of, for example, a white material. The first reflector 30 and the second reflector 32 may be made of, for example, a white resin material.

[0054] The first reflector 30 is located closer to the first substrate side surface 12X1 of the substrate 12 than the first front light-emitting surface FS1 of the first edge-emitting element 14. The first reflector 30 has a first reflector upper surface 30A and a first reflector lower surface 30B as its two end surfaces in the Z direction. The first reflector upper surface 30A faces the same direction as the substrate front surface 12A. The first reflector lower surface 30B faces the same direction as the substrate back surface 12B. The first reflector lower surface 30B faces opposite the substrate front surface 12A.

[0055] In the first embodiment, the first reflector 30 is provided across the substrate 12 and the surface electrode 20. Specifically, a first reflector lower surface 30B of the first reflector 30 is in contact with both the substrate surface 12A and the first surface electrode 20A.

[0056] In another example (not shown), the first reflector lower surface 30B may be in contact only with the substrate surface 12A. In other words, the surface electrode 20 may be provided so as not to contact the first reflector lower surface 30B. Alternatively, the first reflector lower surface 30B may be in contact only with the surface electrode 20. In other words, the surface electrode 20 may be provided over the entire position in contact with the first reflector lower surface 30B.

[0057] The first reflector 30 may be bonded to the substrate 12 and the surface electrode 20 by an adhesive. In particular, the first reflector lower surface 30B may be bonded to the substrate surface 12A and the surface electrode 20 by an adhesive.

[0058] 3, the first reflector 30 has a first outer wall surface 30X1 and a first reflecting surface 30X2 as end surfaces in the X direction. The first outer wall surface 30X1 faces the same direction as the first substrate side surface 12X1 of the substrate 12. In the first embodiment, the first outer wall surface 30X1 is flush with the first substrate side surface 12X1. The first reflecting surface 30X2 faces the first front light-emitting surface FS1 of the first edge-light-emitting element 14 in the X direction.

[0059] The first outer wall surface 30X1 and the first reflecting surface 30X2 extend in a direction intersecting with the substrate surface 12A so as to connect the first reflector upper surface 30A and the first reflector lower surface 30B. In the first embodiment, the first outer wall surface 30X1 is perpendicular to the substrate surface 12A. The first reflecting surface 30X2 is inclined at a first angle θ1 with respect to the substrate surface 12A.

[0060] The first reflective surface 30X2 is configured to reflect light (first front-emitted light L1F) emitted from the first front-emitting surface FS1 of the first edge-emitting element 14. In detail, the first reflective surface 30X2 extends in a direction intersecting with the substrate surface 12A so as to reflect the light emitted from the first front-emitting surface FS1 of the first edge-emitting element 14 toward the upper side of the second reflective surface 32X2. In other words, the first reflective surface 30X2 is configured so that the first front-reflected light that reflects the first front-emitted light L1F is directed toward the upper side of the second reflective surface 32X2.

[0061] In addition, the first reflecting surface 30X2 of the first reflector 30 can also be said to extend in a direction intersecting the substrate surface 12A so as to reflect the light emitted from the first front light-emitting surface FS1 in the X direction toward the first end surface light-emitting element 14 and in a first reflection direction directed upward.

[0062] The first angle θ1 is preferably greater than or equal to 90° and less than or equal to 120°. This makes it easier to reflect the first front-emitted light L1F upward toward the second reflecting surface 32X2. The second reflector 32 is positioned closer to the second substrate side surface 12X2 of the substrate 12 than the first rear-emitting surface BS1 of the first edge-emitting element 14. The second reflector 32 has a second reflector upper surface 32A and a second reflector lower surface 32B as end surfaces in the Z direction. The second reflector upper surface 32A faces the same direction as the substrate front surface 12A. The second reflector lower surface 32B faces the same direction as the substrate back surface 12B. The second reflector lower surface 32B faces the substrate front surface 12A.

[0063] In the first embodiment, the second reflector 32 is provided across the substrate 12 and the surface electrode 20. In detail, the second reflector lower surface 32B of the second reflector 32 is provided in contact with both the substrate surface 12A and the first surface electrode 20A.

[0064] In another example (not shown), the second reflector lower surface 32B may be in contact only with the substrate surface 12A. In other words, the surface electrode 20 may be provided so as not to contact the second reflector lower surface 32B. Alternatively, the second reflector lower surface 32B may be in contact only with the surface electrode 20. In other words, the surface electrode 20 may be provided over the entire position that contacts the second reflector lower surface 32B.

[0065] The second reflector 32 may be bonded to the substrate 12 and the surface electrode 20 with an adhesive. In particular, the second reflector lower surface 32B may be bonded to the substrate surface 12A and the surface electrode 20 with an adhesive.

[0066] 3, the second reflector 32 has a second outer wall surface 32X1 and a second reflecting surface 32X2 as end surfaces in the X direction. The second outer wall surface 32X1 faces the same direction as the second substrate side surface 12X2 of the substrate 12. In the first embodiment, the second outer wall surface 32X1 is flush with the second substrate side surface 12X2. The second reflecting surface 32X2 faces the first rear light-emitting surface BS1 of the first edge-light-emitting element 14 in the X direction.

[0067] The second outer wall surface 32X1 and the second reflecting surface 32X2 extend in a direction intersecting with the substrate surface 12A so as to connect the second reflector upper surface 32A and the second reflector lower surface 32B. In the first embodiment, the second outer wall surface 32X1 is perpendicular to the substrate surface 12A. The second reflecting surface 32X2 is inclined at a second angle θ2 with respect to the substrate surface 12A.

[0068] The second reflective surface 32X2 is configured to reflect light (first rear-emitted light L1B) emitted from the first rear-emitting surface BS1 of the first edge-emitting element 14. In detail, the second reflective surface 32X2 extends in a direction intersecting with the substrate surface 12A so as to reflect the light emitted from the first rear-emitting surface BS1 of the first edge-emitting element 14 toward above the first reflective surface 30X2. In other words, the second reflective surface 32X2 is configured so that the first rear-reflected light that reflects the first rear-emitted light L1B is directed toward above the first reflective surface 30X2.

[0069] In addition, the second reflecting surface 32X2 of the second reflector 32 can also be said to extend in a direction intersecting the substrate surface 12A so as to reflect the light emitted from the first front light-emitting surface FS1 in a second reflection direction toward the first end surface light-emitting element 14 in the X direction and upward.

[0070] The second angle θ2 is preferably 90° or greater and 120° or less. This makes it easier for the first pre-emitted light L1F to be reflected upward from the second reflecting surface 32X2. With the first pre-reflected light directed upward from the second reflecting surface 32X2 and the first post-reflected light directed upward from the first reflecting surface 30X2, the first pre-reflected light and the first post-reflected light intersect when viewed from the Y direction. It can be said that the first reflecting surface 30X2 and the second reflecting surface 32X2 are configured to obliquely reflect the light emitted from the first edge-emitting element 14 so that the first pre-reflected light and the first post-reflected light intersect when viewed from the Y direction. It can also be said that the first angle θ1 and the second angle θ2 are set so that the first pre-reflected light and the first post-reflected light intersect when viewed from the Y direction.

[0071] For example, the first pre-reflected light and the first post-reflected light may intersect above near the center of the semiconductor light-emitting device 10. That is, the first pre-reflected light and the first post-reflected light may intersect near directly above the semiconductor light-emitting device 10. In other words, the first angle θ1 and the second angle θ2 may be set so that the first pre-reflected light and the first post-reflected light intersect above near the center of the semiconductor light-emitting device 10. In the first embodiment, the first edge-emitting element 14 is located near the center of the semiconductor light-emitting device 10. Therefore, it can be said that the first pre-reflected light and the first post-reflected light may intersect above the first edge-emitting element 14. This ensures the light intensity above near the center of the semiconductor light-emitting device 10 even when the first pre-reflected light and the first post-reflected light intersect.

[0072] The first angle θ1 and the second angle θ2 may be changed depending on the desired radiation pattern characteristics. As shown in FIG. 3 , the first angle θ1 and the second angle θ2 may be equal to each other. When the first angle θ1 and the second angle θ2 are equal, the angle between the first front-emitted light L1F and the first front-reflected light and the angle between the first rear-emitted light L1B and the first rear-reflected light tend to be equal. Therefore, the symmetry of the light emitted from the semiconductor light-emitting device 10 tends to be improved.

[0073] The first angle θ1 and the second angle θ2 may be different from each other. For example, when the intensities of the first front-emitted light L1F and the first rear-emitted light L1B are different, the first angle θ1 and the second angle θ2 may be different so as to improve the symmetry of the light emitted from the semiconductor light-emitting device 10. In another example, when the distance between the first front-emitting surface FS1 and the first reflector 30 and the distance between the first rear-emitting surface BS1 and the second reflector 32 are different, the first angle θ1 and the second angle θ2 may be different so as to improve the symmetry of the light emitted from the semiconductor light-emitting device 10.

[0074] 4, the semiconductor light emitting device 10 may include a third reflector 34 and a fourth reflector 36 that connect the first reflector 30 and the second reflector 32. The third reflector 34 and the fourth reflector 36 may be located on the substrate 12. The third reflector 34 and the fourth reflector 36 are provided on either side of the first edge light emitting element 14 in the Y direction, spaced apart from each other.

[0075] The third reflector 34 and the fourth reflector 36 may be made of the same material as the first reflector 30 and the second reflector 32. As shown in FIGS. 1 and 2 , the third reflector 34 connects the Y-direction ends of the first reflector 30 and the second reflector 32 that are closer to the third substrate side surface 12Y1 of the substrate 12. The third reflector 34 connects the Y-direction ends of the first reflector 30 and the second reflector 32 that are closer to the fourth substrate side surface 12Y2 of the substrate 12. In other words, the first to fourth reflectors 30, 32, 34, and 36 are connected to each other to form a ring. As used herein, the term "ring" can refer to any structure that forms a loop, a continuous shape without ends, and a generally loop-like structure with a gap, such as a C-shape. "Ring" shapes include, but are not limited to, circles, ellipses, and polygons with sharp or rounded corners. It can be said that the first to fourth reflectors 30, 32, 34, and 36 surround the first edge light emitting element 14. In other words, it can be said that the first edge light emitting element 14 is housed within the area surrounded by the first to fourth reflectors 30, 32, 34, and 36.

[0076] In the first embodiment, the first to fourth reflectors 30, 32, 34, and 36 are integrally formed and have an annular shape as a whole. However, the present invention is not limited to this, and the first to fourth reflectors 30, 32, 34, and 36 may be provided as separate bodies.

[0077] As shown in Fig. 4, the third reflector 34 is located closer to the third substrate side surface 12Y1 of the substrate 12 than the third element side surface 14Y1 of the first edge light emitting element 14. The third reflector 34 has a third reflector upper surface 34A and a third reflector lower surface 34B as its two end surfaces in the Z direction. The third reflector upper surface 34A faces the same direction as the substrate front surface 12A. The third reflector lower surface 34B faces the same direction as the substrate back surface 12B. The third reflector lower surface 34B faces the substrate front surface 12A.

[0078] 1 , in the first embodiment, the third reflector 34 is provided across the substrate 12 and the surface electrode 20. In detail, a third reflector lower surface 34B of the third reflector 34 is provided in contact with the substrate surface 12A, the first surface electrode 20A, and the second surface electrode 20B.

[0079] In another example (not shown), the third reflector lower surface 34B may be in contact only with the substrate surface 12A. In other words, the surface electrode 20 may be provided so as not to contact the third reflector lower surface 34B. Alternatively, the third reflector lower surface 34B may be in contact only with the surface electrode 20. In other words, the surface electrode 20 may be provided over the entire position in contact with the third reflector lower surface 34B.

[0080] The third reflector 34 may be bonded to the substrate 12 and the surface electrode 20 by an adhesive. In particular, the third reflector lower surface 34B may be bonded to the substrate surface 12A and the surface electrode 20 by an adhesive.

[0081] 2 and 4, the third reflector 34 has a third outer wall surface 34Y1 and a third reflecting surface 34Y2 as end surfaces in the X direction. The third outer wall surface 34Y1 faces the same direction as the third substrate side surface 12Y1 of the substrate 12. In this embodiment, the third outer wall surface 34Y1 is flush with the third substrate side surface 12Y1. The third reflecting surface 34Y2 faces the third element side surface 14Y1 of the first edge light emitting element 14 in the Y direction.

[0082] 4, the third outer wall surface 34Y1 and the third reflecting surface 34Y2 extend in a direction intersecting with the substrate surface 12A so as to connect the third reflector upper surface 34A and the third reflector lower surface 34B. In this embodiment, the third outer wall surface 34Y1 is perpendicular to the substrate surface 12A. The third reflecting surface 34Y2 may be inclined at a third angle θ3 with respect to the substrate surface 12A.

[0083] As shown in Fig. 2, the fourth reflector 36 is located closer to the fourth substrate side surface 12Y2 of the substrate 12 than the fourth element side surface 14Y2 of the first edge light emitting element 14 in a plan view. As shown in Fig. 3, the fourth reflector 36 has a fourth reflector upper surface 36A and a fourth reflector lower surface 36B as end surfaces in the Z direction. The fourth reflector upper surface 36A faces the same direction as the substrate front surface 12A. The fourth reflector lower surface 36B faces the same direction as the substrate back surface 12B. The fourth reflector lower surface 36B faces the substrate front surface 12A.

[0084] 1 , in this embodiment, the fourth reflector 36 is provided across the substrate 12 and the surface electrode 20. In detail, a fourth reflector lower surface 36B of the fourth reflector 36 is provided in contact with the substrate surface 12A, the first surface electrode 20A, and the second surface electrode 20B.

[0085] The fourth reflector lower surface 36B may be in contact only with the substrate surface 12A. In other words, the surface electrode 20 may be provided so as not to contact the fourth reflector lower surface 36B. Alternatively, the fourth reflector lower surface 36B may be in contact only with the surface electrode 20. In other words, the surface electrode 20 may be provided over the entire position in contact with the fourth reflector lower surface 36B.

[0086] The fourth reflector 36 may be bonded to the substrate 12 and the surface electrode 20 with an adhesive. In particular, the fourth reflector lower surface 36B may be bonded to the substrate surface 12A and the surface electrode 20 with an adhesive.

[0087] 2 and 4, the fourth reflector 36 has a fourth outer wall surface 36Y1 and a fourth reflecting surface 36Y2 as end surfaces in the X direction. The fourth outer wall surface 36Y1 faces the same direction as the fourth substrate side surface 12Y2 of the substrate 12. In this embodiment, the fourth outer wall surface 36Y1 is flush with the fourth substrate side surface 12Y2. The fourth reflecting surface 36Y2 faces the fourth element side surface 14Y2 of the first edge light emitting element 14 in the Y direction.

[0088] 4, the fourth outer wall surface 36Y1 and the fourth reflecting surface 36Y2 extend in a direction intersecting with the substrate surface 12A so as to connect the fourth reflector upper surface 36A and the fourth reflector lower surface 36B. In this embodiment, the fourth outer wall surface 36Y1 is perpendicular to the substrate surface 12A. The fourth reflecting surface 36Y2 is inclined at a fourth angle θ4 with respect to the substrate surface 12A.

[0089] 2, the first edge light emitting element 14 is disposed at the center of the area surrounded by the first to fourth reflectors 30, 32, 34, and 36 in a plan view. The distance in the X direction between the first front light emitting surface FS1 and the first reflecting surface 30X2 is the same as the distance in the X direction between the first rear light emitting surface BS1 and the second reflecting surface 32X2. The distance in the Y direction between the third element side surface 14Y1 and the third reflecting surface 34Y2 is the same as the distance in the Y direction between the fourth element side surface 14Y2 and the fourth reflecting surface 36Y2.

[0090] However, without being limited thereto, the distance in the X direction between the first front light-emitting surface FS1 and the first reflecting surface 30X2 may be different from the distance in the X direction between the first rear light-emitting surface BS1 and the second reflecting surface 32X2. Also, the distance in the Y direction between the third element side surface 14Y1 and the third reflecting surface 34Y2 may be different from the distance in the Y direction between the fourth element side surface 14Y2 and the fourth reflecting surface 36Y2.

[0091] Incidentally, because the first reflecting surface 30X2 is inclined, the distance in the X direction between the first front light-emitting surface FS1 and the first reflecting surface 30X2 varies depending on the Z direction. In this case, the distance in the X direction between the first front light-emitting surface FS1 and the first reflecting surface 30X2 may be a minimum value, which is the distance at a point corresponding to the lower end of the first front light-emitting surface FS1, or may be a maximum value, which is the distance at a point corresponding to the upper end of the first front light-emitting surface FS1. The same applies to other distances.

[0092] The third angle θ3 and the fourth angle θ4 may be equal to each other. Having the third angle θ3 and the fourth angle θ4 equal to each other tends to improve the symmetry of the light emitted from the semiconductor light emitting device 10. However, this is not limited thereto, and the third angle θ3 and the fourth angle θ4 may be different from each other. As an example, the distance between the third element side surface 14Y1 and the third reflector 34 may be different from the distance between the fourth element side surface 14Y2 and the fourth reflector 36. In this case, the third angle θ3 and the fourth angle θ4 can be adjusted to be different angles so as to improve the symmetry of the light emitted from the semiconductor light emitting device 10.

[0093] The magnitude relationship among the first angle θ1 to the fourth angle θ4 can be set according to the desired radiation pattern characteristics. The first angle θ1 to the fourth angle θ4 may be equal to one another. The first angle θ1 and the second angle θ2 may be equal to one another, the third angle θ3 and the fourth angle θ4 may be equal to one another, and the first angle θ1 and the second angle θ2 may be different from the third angle θ3 and the fourth angle θ4. The first angle θ1 to the fourth angle θ4 may all be different.

[0094] The first to fourth reflecting surfaces 30X2, 32X2, 34Y2, and 36Y2 may be partially or entirely curved. For example, the first to fourth reflecting surfaces 30X2, 32X2, 34Y2, and 36Y2 may be concave toward the first to fourth outer wall surfaces 30X1, 32X1, 34Y1, and 36Y1, respectively, or may be convex toward the first edge-light-emitting element 14.

[0095] (Explanation of Sealing Member) As shown in FIG. 3 , the semiconductor light-emitting device 10 includes a sealing member 40 that seals the first edge-emitting element 14. The sealing member 40 is provided within an area surrounded by the first reflector 30 and the second reflector 32. In this embodiment, the sealing member 40 is provided within an area surrounded by the first to fourth reflectors 30, 32, 34, and 36. More specifically, the sealing member 40 fills an area surrounded by the first to fourth reflecting surfaces 30X2, 32X2, 34Y2, and 36Y2. The sealing member 40 is made of a light-transmitting material. The sealing member 40 serves to diffuse and transmit light emitted from the first edge-emitting element 14. The sealing member 40 may be made of a material including silicone resin, epoxy resin, acrylic resin, or the like.

[0096] As shown in FIG. 1 , in this embodiment, the sealing member 40 covers the first edge light emitting element 14. The sealing member 40 covers the substrate surface 12A. The sealing member 40 includes a sealing upper surface 40A as its upper end surface in the Z direction. The sealing upper surface 40A is flush with the first to fourth reflector upper surfaces 30A, 32A, 34A, and 36A. The sealing member 40 entirely covers the first to fourth reflecting surfaces 30X2, 32X2, 34Y2, and 36Y2.

[0097] However, the present invention is not limited to this, and the sealing member 40 may cover a portion of the first to fourth reflecting surfaces 30X2, 32X2, 34Y2, and 36Y2. In other words, a portion of the first to fourth reflecting surfaces 30X2, 32X2, 34Y2, and 36Y2 may be exposed from the sealing member 40. In other words, the sealing top surface 40A does not have to be flush with the first to fourth reflector top surfaces 30A, 32A, 34A, and 36A. The sealing top surface 40A may be located closer to the substrate 12 in the Z direction than the first to fourth reflector top surfaces 30A, 32A, 34A, and 36A.

[0098] The cross-sectional structures of the first edge-emitting element 14 and the sealing member 40 will be described with reference to FIG. 5 . As shown in FIG. 5 , the first edge-emitting element 14 may include an active layer 50, an n-side guide layer 52, a p-side guide layer 54, an n-type semiconductor layer 56, and a p-type semiconductor layer 58. The n-type semiconductor layer 56, the n-side guide layer 52, the active layer 50, the p-side guide layer 54, the p-type semiconductor layer 58, and the element surface electrode 16A may be stacked in this order. The n-side guide layer 52 is located between the n-type semiconductor layer 56 and the active layer 50, and the p-side guide layer 54 is located between the active layer 50 and the p-type semiconductor layer 58, thereby forming a double heterojunction. Electrons are injected into the active layer 50 from the n-type semiconductor layer 56 via the n-side guide layer 52, and holes are injected from the p-type semiconductor layer 58 via the p-side guide layer 54. These electrons and holes recombine in the active layer 50, thereby generating laser light in the active layer 50.

[0099] The n-type semiconductor layer 56 and the p-type semiconductor layer 58 are configured to have the effect of confining carriers (electrons and holes) in the active layer 50 and the effect of confining laser light from the active layer 50 between the n-type semiconductor layer 56 and the p-type semiconductor layer 58.

[0100] The n-type semiconductor layer 56 may be configured as an n-type semiconductor layer in which silicon (Si) as an n-type dopant is implanted into aluminum gallium arsenide (AlGaAs), and the p-type semiconductor layer 58 may be configured as a p-type semiconductor layer in which beryllium (Be) as a p-type dopant is implanted into AlGaAs.

[0101] Each of the n-side guide layer 52 and the p-side guide layer 54 may be made of, for example, a material containing AlGaAs, and each of the n-side guide layer 52 and the p-side guide layer 54 may be made of, for example, an AlxGa(1-x)As (0≦x≦1) layer.

[0102] The n-type semiconductor layer 56 has a larger band gap than the n-side guide layer 52. The p-type semiconductor layer 58 has a larger band gap than the p-side guide layer 54. This enhances the effect of confining carriers in the active layer 50 and the effect of confining laser light from the active layer 50 between the n-type semiconductor layer 56 and the p-type semiconductor layer 58, thereby achieving a highly efficient first edge light emitting device 14.

[0103] The active layer 50 has a multiple-quantum well (MQW) structure. The active layer 50 is a layer that generates laser light by the recombination of electrons and holes and amplifies the generated laser light. The active layer 50 is formed by repeatedly stacking quantum well layers made of, for example, undoped GaAsP layers and barrier layers made of undoped indium aluminum gallium arsenide (InAlGaAs) layers alternately over multiple periods.

[0104] The first edge-emitting device 14 has a Fabry-Perot cavity formed by the n-side guide layer 52, the active layer 50, and the p-side guide layer 54, with the first front-emitting surface FS1 and the first rear-emitting surface BS1 as cavity end faces. Laser light generated in the active layer 50 is amplified by stimulated emission while traveling back and forth between the first front-emitting surface FS1 and the first rear-emitting surface BS1. A portion of the amplified laser light is then emitted as laser light from the first front-emitting surface FS1 and the first rear-emitting surface BS1.

[0105] In this embodiment, a dielectric multilayer film 60 is provided as an end surface film on the first front light-emitting surface FS1 and the first rear light-emitting surface BS1. The dielectric multilayer film 60 is made of, for example, silicon oxide (SiO ２ ) and titanium oxide (TiO ２ ) may be laminated in multiple layers.

[0106] The intensities of the first front-emitted light L1F and the first rear-emitted light L1B can be adjusted, for example, by adjusting the reflectance of the dielectric multilayer film 60 provided on the first front-emission surface FS1 and the reflectance of the dielectric multilayer film 60 provided on the first rear-emission surface BS1. For example, if the reflectance of the dielectric multilayer film 60 provided on the first front-emitted light L1F is the same as the reflectance of the dielectric multilayer film 60 provided on the first rear-emission surface BS1, the intensities of the two emitted lights L1F and L1B tend to be equal. On the other hand, if the reflectance of the dielectric multilayer film 60 provided on the first front-emitted surface FS1 is lower than the reflectance of the dielectric multilayer film 60 provided on the first rear-emitted surface BS1, the intensity of the first front-emitted light L1F tends to be higher than the intensity of the first rear-emitted light L1B.

[0107] The sealing member 40 covers the first edge light emitting element 14. More specifically, the sealing member 40 covers the first edge light emitting element 14 while being in contact with the dielectric multilayer film 60 of the first edge light emitting element 14. The first edge light emitting element 14 may not include the dielectric multilayer film 60, and the sealing member 40 may cover the first edge light emitting element 14 while being in contact with both the first front light emitting surface FS1 and the first rear light emitting surface BS1.

[0108] The sealing member 40 may be made of a material having a refractive index higher than that of air. The sealing member 40 may also be made of a material having a refractive index higher than that of some of the materials constituting the dielectric multilayer film 60. The light (first front-emitting light L1F and first rear-emitting light L1B) emitted from the first edge-emitting element 14 passes through the sealing member 40. Since the refractive index of the sealing member 40 is higher than that of air, the spreading angles of the first front-emitting light L1F and first rear-emitting light L1B are changed by the sealing member 40. The higher the refractive index of the material constituting the sealing member 40, the larger the spreading angles of the first front-emitting light L1F and first rear-emitting light L1B. By adjusting the refractive index of the sealing member 40, the spreading angles of the first front-emitting light L1F and first rear-emitting light L1B can be adjusted.

[0109] Specifically, adjusting the refractive index of the sealing member 40 changes the angle at which light is refracted at the boundary between the sealing member 40 and the first front-emitting light L1F and the first rear-emitting light L1B. This allows the spread angle to be adjusted. The NFP (Near Field Pattern) of an edge-emitting laser element such as the first edge-emitting element 14 generally has a smaller spread angle in the direction perpendicular to the thickness direction (Y direction) than the spread angle of the emitted light in the thickness direction (Z direction) of the element. Therefore, the sealing member 40 can spread the emitted light in the Y direction more than when the sealing member 40 is not used. Furthermore, the spread angle in the Y direction can be adjusted by adjusting the refractive index of the sealing member 40.

[0110] The sealing member 40 may be made of a material that blocks visible light. In this case, the first edge-emitting element 14 may be configured to emit light of a wavelength different from the visible light that the sealing member 40 blocks.

[0111] (Operation of First Embodiment) The operation of the semiconductor light emitting device 10 of the first embodiment will be described below. Figures 6 and 7 show far field pattern (FFP) data as the light radiation pattern characteristics of the semiconductor light emitting device 10. The far field pattern data is data that indicates the relationship between the radiation angle and relative light intensity of light emitted from the semiconductor light emitting device 10. In Figures 6 and 7, the horizontal axis indicates the angle, and the vertical axis indicates the relative light intensity.

[0112] FIG. 6 shows the FFP data D of the semiconductor light emitting device 10 in the X direction. ＥＸ As a comparative example, exemplary FFP data D Ｌ is shown by a dotted line. Also, exemplary FFP data D Ｖ is indicated by a dashed line. FIG. 7 shows the FFP data D of the semiconductor light emitting device 10 in the Y direction. ＥＹ This shows:

[0113] In FIG. 6, each FFP data D ＥＸ , D Ｌ , D Ｖ In the graph, the reference angle (0°) is the direction directly above the center of the light emitting element of each semiconductor light emitting device in the X direction. The angle from the center of the light emitting element toward the first front light emitting surface FS1 shown in FIG. 2 is indicated as "+", and the angle toward the first rear light emitting surface BS1 is indicated as "-". Note that the FFP data D Ｖ In the graph, the intensity at the reference angle (0°) is minimum between the peaks on both sides of the reference angle (0°).

[0114] In FIG. 7, FFP data D ＥＹ indicates the reference angle (0°) as the direction directly above the center in the Y direction of the first edge light emitting element 14 of the semiconductor light emitting device 10. Also, the angle from the center of the light emitting element toward the third element side surface 14Y1 shown in Figure 2 is indicated as "+", and the angle toward the fourth element side surface 14Y2 is indicated as "-".

[0115] In this disclosure, the angle range to the right of the reference angle (0°) in Fig. 6 may be referred to as a "positive angle," and the angle range to the left of the reference angle (0°) may be referred to as a "negative angle." Furthermore, in this disclosure, "a large radiation angle" refers to a large angle from the reference angle (0°), regardless of whether it is a positive angle or a negative angle.

[0116] Each FFP data D shown in FIG. ＥＸ , D Ｌ， D Ｖ The range of radiation angles in which a light intensity of 1 / 2 or more of the maximum intensity is obtained is defined as the divergence angle θ ＥＸ and θ Ｖ FFP data D Ｖ The angle between the two angles farthest from the reference angle (0°) among the angles at which the light intensity is at least half of the maximum intensity is defined as the divergence angle θ Ｖ It states that:

[0117] As shown in FIG. 6, the divergence angle θ ＥＸ is the divergence angle θ Ｌ and the divergence angle θ ＶThis means that the semiconductor light emitting device 10 has a wider beam angle than a semiconductor light emitting device using an LED element and a VCSEL.

[0118] FFP data D shown in FIG. ＥＸ In the FFP data D, the angle at which the relative light intensity is maximum on the left side (negative angle) of the reference angle (0°) is shown as the first peak angle θp1. ＥＸ In the graph, the angle at which the relative light intensity is greatest to the right (positive angle) of the reference angle (0°) is shown as a second peak angle θp2. The semiconductor light emitting device 10 has peaks on both sides of the X-direction where the radiation angle is greater than the reference angle (0°).

[0119] As shown in FIG. 7, the FFP data D ＥＹ is FFP data D ＥＸ Similarly, the FFP data D ＥＸ Similarly, there are peaks on both sides where the radiation angle is larger than the reference angle (0°).

[0120] When LED elements are used as the light-emitting elements of a semiconductor light-emitting device, it is difficult to meet the demand for higher output from the semiconductor light-emitting device. In this regard, the semiconductor light-emitting device 10 of this embodiment employs a first edge light-emitting element 14, which is a semiconductor laser element configured to emit light from a first front light-emitting surface FS1 and a first rear light-emitting surface BS1, as the light-emitting element. Therefore, the semiconductor light-emitting device 10 can achieve higher output than semiconductor light-emitting devices that use conventional LED elements.

[0121] A semiconductor laser element has higher directivity than an LED element. Therefore, a semiconductor light-emitting device including a semiconductor laser element as a light-emitting element tends to have a narrow beam angle. In this regard, the semiconductor light-emitting device 10 of this embodiment includes a first reflector 30 having a first reflecting surface 30X2 and a second reflector 32 having a second reflecting surface 32X2. As a result, the first front-emitting light L1F emitted from the first front-emitting surface FS1 is reflected by the first reflecting surface 30X2 of the first reflector 30 and is emitted from the semiconductor light-emitting device 10. The first rear-emitting light L1B emitted from the first rear-emitting surface BS1 is reflected by the second reflecting surface 32X2 of the second reflector 32 and is emitted from the semiconductor light-emitting device 10. Therefore, the beam angle tends to be wider compared to a configuration using light from one side.

[0122] The semiconductor light emitting device 10 also includes a translucent sealing member 40 that is provided within the region surrounded by the first reflector 30 and the second reflector 32 and seals the first edge light emitting element 14. This allows the light emitted from the first edge light emitting element 14 to be diffused by the sealing member 40.

[0123] Consider a case where a laser beam is irradiated over a wide area. For example, laser systems such as LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging), which is an example of three-dimensional distance measurement, use a scanning measurement method that scans a laser beam to detect an object within a measurement area, or a flash measurement method that detects an object within a measurement area without scanning a laser beam. In a flash measurement method, the distance from the light source to the object is longer at the edge of the measurement area than at the center of the measurement area. Therefore, the intensity of the irradiated laser beam decreases from the center to the edge of the measurement area. In other words, there is a risk of insufficient light intensity at the edge of the measurement area. Insufficient light intensity can lead to measurement failure or large measurement errors.

[0124] In the semiconductor light-emitting device 10 of the first embodiment, the first reflecting surface 30X2 of the first reflector 30 extends in a direction intersecting with the substrate surface 12A so as to reflect light emitted from the first front-emitting surface FS1 upward toward the second reflecting surface 32X2. The second reflecting surface 32X2 of the second reflector 32 extends in a direction intersecting with the substrate surface 12A so as to reflect light emitted from the first rear-emitting surface BS1 upward toward the first reflecting surface 30X2. As a result, the radiation pattern characteristics of the semiconductor light-emitting device 10 tend to have two peaks, one for the first front-emitting light L1F and the other for the first rear-emitting light L1B, on both sides of the radiation angle larger than the reference position (0°). As a result, the radiation pattern characteristics tend to have peaks of the relative light intensity of the light emitted from the semiconductor light-emitting device on both sides of the radiation angle larger than the reference position (0°). In other words, the semiconductor light-emitting device 10 can emit laser light with high light intensity at positions with large radiation angles. This makes it possible to prevent insufficient light intensity in the above measurement method.

[0125] Incidentally, if peaks are to be created on both sides, simply reflecting the light upward is sufficient. However, in this case, the difference in light intensity between the two peaks is likely to become large. In this regard, the semiconductor light-emitting device 10, as described above, reflects the light obliquely so that the light reflected by the first reflecting surface 30X2 and the light reflected by the second reflecting surface 32X2 intersect, and the diffusion is improved by sealing with the sealing member 40. Therefore, it is possible to create peaks on both sides while also ensuring the light intensity in the central portion. This makes it possible to obtain radiation pattern characteristics suitable for sensing.

[0126] The positions of the two peaks can be adjusted by changing the angles of the first reflecting surface 30X2 and the second reflecting surface 32X2. The peak position of the first front-emitted light L1F can be adjusted to be located at one end having a larger radiation angle than the reference position (0°) (for example, the first peak angle θp1 in FIG. 6 ), and the peak position of the first rear-emitted light L1B can be adjusted to be located at the other end having a larger radiation angle than the reference position (0°) (for example, the second peak θp2 in FIG. 6 ).

[0127] Advantages of the First Embodiment The semiconductor light-emitting device 10 of this embodiment has the following advantages. (1-1) The semiconductor light-emitting device 10 includes a substrate 12, a first edge light-emitting element 14, a first reflector 30, a second reflector 32, and a sealing member 40. The substrate 12 includes a substrate surface 12A. The first edge light-emitting element 14 is located on the substrate 12 and includes a first front light-emitting surface FS1 and a first rear light-emitting surface BS1, which are end surfaces in the X direction, which is a first direction intersecting with the Z direction, which is a thickness direction perpendicular to the substrate surface 12A. The first reflector 30 has a first reflecting surface 30X2 facing the first front light-emitting surface FS1. The second reflector 32 has a second reflecting surface 32X2 facing the first rear light-emitting surface BS1. The sealing member 40 is translucent and is provided within a region surrounded by the first reflector 30 and the second reflector 32.

[0128] According to this configuration, the light emitted from the first front light-emitting surface FS1 is reflected by the first reflecting surface 30X2, and the light emitted from the first rear light-emitting surface BS1 is reflected by the second reflecting surface 32X2, thereby widening the beam angle of the light emitted from the semiconductor light-emitting device 10 using the first edge-emitting element 14. Therefore, the radiation pattern characteristics of the light emitted from the semiconductor light-emitting device 10 can be improved.

[0129] Furthermore, the first edge light emitting element 14 is covered with the sealing member 40. This makes it easier for the light emitted from the first edge light emitting element 14 to be diffused. This allows the beam angle of the light emitted from the semiconductor light emitting device 10 to be widened and also suppresses local deviations in the relative light intensity in the radiation pattern characteristics. This improves the radiation pattern characteristics of the light emitted from the semiconductor light emitting device 10.

[0130] (1-2) The first reflector 30 extends in a direction intersecting the substrate surface 12A so as to reflect the light emitted from the first front light-emitting surface FS1 upward toward the second reflecting surface 32X2. The second reflector 32 extends in a direction intersecting the substrate surface 12A so as to reflect the light emitted from the first rear light-emitting surface BS1 upward toward the first reflecting surface 30X2. This makes it easier to position intensity peaks on both sides of the radiation angle. Therefore, it is possible to obtain radiation pattern characteristics with peaks on both sides of the reference angle and a wide directivity angle.

[0131] (1-3) The semiconductor light-emitting device 10 includes a first reflecting surface 30X2 that reflects light emitted from the first front-emitting surface FS1 of the first edge-emitting element 14 and a second reflecting surface 32X2 that reflects light emitted from the first rear-emitting surface BS1 of the first edge-emitting element 14, and emits laser light having a radiation pattern characteristic with two peaks. The positions of the two peaks can be adjusted by changing the angles of the first reflecting surface 30X2 and the second reflecting surface 32X2. The peak position of the first front-emitting light L1F can be adjusted to be located at one of the positions with a larger radiation angle than the reference position (0°) (e.g., the first peak angle θp1 in FIG. 6 ), and the peak position of the first rear-emitting light L1B can be adjusted to be located at the other of the positions with a larger radiation angle than the reference position (0°) (e.g., the second peak θp2 in FIG. 6 ).

[0132] (1-4) The first reflecting surface 30X2 is inclined at a first angle θ1 with respect to the substrate surface 12A. The second reflecting surface 32X2 is inclined at a second angle θ2 with respect to the substrate surface 12A. The first angle θ1 is equal to or greater than 90° and less than 120°, and the second angle θ2 is equal to or greater than 90° and less than 120°.

[0133] This configuration makes it easy to obtain a radiation pattern characteristic in which the peak positions are located on both sides of the reference position (0°) at angles greater than the reference position, thereby making it possible to obtain a radiation pattern characteristic suitable for sensing.

[0134] (1-5) The first edge light emitting element 14 includes a third reflector 34 and a fourth reflector 36 provided on both sides in the Y direction, which is a second direction intersecting with the X direction. The reflectors 30, 32, 34, and 36 are connected to each other to form a ring shape.

[0135] With this configuration, the first edge light emitting element 14 is located between the third reflector 34 and the fourth reflector 36 in the Y direction, thereby improving the symmetry of the radiation pattern characteristics of the semiconductor light emitting device 10 in the Y direction. In addition, because the reflectors 30, 32, 34, and 36 are connected to each other to form a ring, the sealing member 40 is less likely to leak out, making it easier to seal the first edge light emitting element 14.

[0136] (1-6) The first edge-emitting element 14 is configured to emit light of the same intensity from the first front light-emitting surface FS1 and the first rear light-emitting surface BS1. This configuration improves the symmetry of the radiation pattern characteristics of the semiconductor light-emitting device 10 compared to when light of different intensities is emitted from the first front light-emitting surface FS1 and the first rear light-emitting surface BS1.

[0137] (1-7) The semiconductor light emitting device 10 further includes a submount substrate 26 located between the substrate 12 and the first edge light emitting element 14 in the Z direction. The submount substrate 26 is connected to the substrate 12 and the first edge light emitting element 14.

[0138] According to this configuration, the position of the first edge light emitting element 14 in the Z direction can be adjusted by the submount substrate 26. Furthermore, by forming the submount substrate 26 from a material with high heat dissipation properties, the heat dissipation properties of the semiconductor light emitting device 10 can be improved.

[0139] Second Embodiment A semiconductor light emitting device 10 according to a second exemplary embodiment of the present disclosure will be described with reference to FIGS. 8 to 10. FIG. 8 is a schematic plan view of the semiconductor light emitting device 10. Note that the sealing member 40 is omitted from FIG. 8 to facilitate understanding of the drawing. FIG. 9 is a schematic cross-sectional view of the semiconductor light emitting device 10 taken along line F9-F9 in FIG. 8. FIG. 10 is a schematic cross-sectional view of the semiconductor light emitting device 10 taken along line F10-F10 in FIG. 8.

[0140] For ease of understanding, the same reference numerals are used in Figures 8 to 10 for components similar to those in Figures 2 and 3. The semiconductor light-emitting device 10 in Figure 8 differs from the semiconductor light-emitting device 10 in Figure 1 mainly in that it includes a second edge light-emitting element 114 as a light-emitting element in addition to the first edge light-emitting element 14. In the following description, detailed description of components similar to those in the semiconductor light-emitting device 10 may be omitted.

[0141] 8, the semiconductor light emitting device 10 includes a second edge light emitting element 114 provided on the substrate 12 in addition to the first edge light emitting element 14. If the first edge light emitting element 14 is considered to be a first light source of the semiconductor light emitting device 10, the second edge light emitting element 114 functions as a second light source of the semiconductor light emitting device 10. The second edge light emitting element 114 is provided spaced apart from the first edge light emitting element 14. In this embodiment, the first edge light emitting element 14 and the second edge light emitting element 114 are arranged spaced apart in the Y direction.

[0142] The second edge light emitting element 114 may be an edge-emitting laser element. The second edge light emitting element 114 may be a laser diode that emits light in a predetermined wavelength band. The configuration of the second edge light emitting element 114 is not particularly limited. The second edge light emitting element 114 may be, for example, a Fabry-Perot laser diode element.

[0143] The second edge light emitting element 114 has a flat plate shape with its thickness direction aligned in the Z direction. In plan view, the second edge light emitting element 114 has a rectangular shape with a long side and a short side. In the second embodiment, the second edge light emitting element 114 is arranged so that its long side is aligned with the X direction and its short side is aligned with the Y direction. In other words, the second edge light emitting element 114 is arranged so that its long side and short side are aligned with those of the first edge light emitting element 14.

[0144] As shown in FIGS. 8 and 10, the second edge light emitting element 114 includes an element front surface 114A, an element back surface 114B, and first to fourth element side surfaces 114X1, 114X2, 114Y1, and 114Y2 connecting the element front surface 114A and the element back surface 114B.

[0145] 10, the element front surface 114A and the element back surface 114B are both end surfaces in the Z direction of the second edge surface light emitting element 114. The element front surface 114A faces the same side as the substrate front surface 12A of the substrate 12, and the element back surface 114B faces the substrate front surface 12A.

[0146] 8, the first element side surface 114X1 and the second element side surface 114X2 are both end surfaces in the X direction of the second edge light emitting element 114. In other words, the first element side surface 114X1 and the second element side surface 114X2 can also be said to be both end surfaces in the longitudinal direction of the second edge light emitting element 114.

[0147] The third element side surface 114Y1 and the fourth element side surface 114Y2 are both end surfaces in the Y direction of the second edge light emitting element 114. In other words, the third element side surface 114Y1 and the fourth element side surface 114Y2 can also be said to be both end surfaces in the short direction of the second edge light emitting element 114.

[0148] In the second embodiment, the first element side surface 114X1 is the end surface of the second edge light emitting element 114 in the X direction that faces the same side as the first substrate side surface 12X1. The second element side surface 114X2 is the end surface of the second edge light emitting element 114 in the X direction that faces the same side as the second substrate side surface 12X2. The third element side surface 114Y1 is the end surface of the second edge light emitting element 114 in the Y direction that faces the same side as the third substrate side surface 12Y1. The fourth element side surface 114Y2 is the end surface of the second edge light emitting element 114 in the Y direction that faces the same side as the fourth substrate side surface 12Y2.

[0149] Here, the second element side surface 114X2 constitutes a second front-emitting surface FS2 that emits laser light. The second element side surface 114X2 (second front-emitting surface FS2) faces the same side as the second substrate side surface 12X2. Therefore, the second edge light emitting element 114 emits second front-emitting light L2F from the second front-emitting surface FS2. The second front-emitting light L2F then travels from the second front-emitting surface FS2 toward the second substrate side surface 12X2.

[0150] 10 , the second front light-emitting surface FS2 faces the second reflecting surface 32X2 of the second reflector 32 in the X direction. The second reflecting surface 32X2 is configured to reflect light (second front-emitted light L2F) emitted from the second front light-emitting surface FS2 of the second edge-light-emitting element 114. Specifically, the second reflecting surface 32X2 extends in a direction intersecting with the substrate surface 12A so as to reflect the light emitted from the second front light-emitting surface FS2 of the second edge-light-emitting element 114 toward above the first reflecting surface 30X2. In other words, the second reflecting surface 32X2 is configured so that the second front-reflected light, which reflects the second front-emitted light L2F, is directed toward above the first reflecting surface 30X2.

[0151] It can be said that the second reflecting surface 32X2 is configured so that both the first rear-reflected light that reflects the first rear-emitted light L1B and the second front-reflected light that reflects the second front-emitted light L2F are directed upward from the first reflecting surface 30X2.

[0152] The first element side surface 114X1 constitutes a second rear-emitting surface BS2 that emits laser light. The first element side surface 114X1 (second rear-emitting surface BS2) faces the same side as the first substrate side surface 12X1. In other words, the second rear-emitting surface BS2 faces the opposite direction from the second front-emitting surface FS2. Therefore, the second edge-emitting element 114 emits second rear-emitting light L2B from the second rear-emitting surface BS2. The second rear-emitting light L2B then travels from the second rear-emitting surface BS2 toward the first substrate side surface 12X1.

[0153] The second front light-emitting surface FS2 and the second rear light-emitting surface BS2 are both end surfaces of the second edge light-emitting element 114 in the X direction intersecting with the thickness direction perpendicular to the substrate surface 12A. The second edge light-emitting element 114 is configured to emit light from both the second front light-emitting surface FS2 and the second rear light-emitting surface BS2.

[0154] 10 , the second rear-emitting surface BS2 faces the first reflecting surface 30X2 of the first reflector 30 in the X direction. The first reflecting surface 30X2 is configured to reflect light (second rear-emitted light B2F) emitted from the second rear-emitting surface BS2 of the second end-surface light-emitting element 114. Specifically, the first reflecting surface 30X2 extends in a direction intersecting with the substrate surface 12A so as to reflect the light emitted from the second rear-emitting surface BS2 of the second end-surface light-emitting element 114 toward above the second reflecting surface 32X2. In other words, the first reflecting surface 30X2 is configured so that the second rear-reflected light, which reflects the second rear-emitted light L2B, is directed toward above the second reflecting surface 32X2.

[0155] It can be said that the first reflecting surface 30X2 is configured so that both the first pre-reflected light that reflects the first pre-emitted light L1F and the second post-reflected light that reflects the second post-emitted light L2B are directed upward toward the second reflecting surface 32X2.

[0156] The first front light-emitting surface FS1 of the first edge light-emitting element 14 and the second rear light-emitting surface BS2 of the second edge light-emitting element 114 face the same side as the first substrate side surface 12X1 of the substrate 12. In other words, the first front light-emitting surface FS1 of the first edge light-emitting element 14 and the second rear light-emitting surface BS2 of the second edge light-emitting element 114 face the same direction. The first front light-emitting surface FS1 of the first edge light-emitting element 14 and the second rear light-emitting surface BS2 of the second edge light-emitting element 114 are arranged side by side in the Y direction.

[0157] Furthermore, the first rear light-emitting surface BS1 of the first edge light-emitting element 14 and the second front light-emitting surface FS2 of the second edge light-emitting element 114 face the same side as the second substrate side surface 12X2 of the substrate 12. In other words, the first rear light-emitting surface BS1 of the first edge light-emitting element 14 and the second front light-emitting surface FS2 of the second edge light-emitting element 114 face the same direction. The first rear light-emitting surface BS1 of the first edge light-emitting element 14 and the second front light-emitting surface FS2 of the second edge light-emitting element 114 are arranged side by side in the Y direction.

[0158] In other words, the first front light-emitting surface FS1 of the first edge light-emitting element 14 and the second front light-emitting surface FS2 of the second edge light-emitting element 114 face opposite sides in the X direction. Also, the first rear light-emitting surface BS1 of the first edge light-emitting element 14 and the second rear light-emitting surface BS2 of the second edge light-emitting element 114 face opposite sides in the X direction.

[0159] The first edge light emitting element 14 and the second edge light emitting element 114 may be edge light emitting elements having the same light emitting characteristics. In this case, the intensity of the first front emission light L1F emitted from the first front emission surface FS1 may be greater than the intensity of the first rear emission light L1B emitted from the first rear emission surface BS1. The intensity of the second front emission light L2F emitted from the second front emission surface FS2 may be greater than the intensity of the second rear emission light L2B emitted from the second rear emission surface BS2. In other words, in the X direction, the first front emission light L1F having an intensity greater than the first rear emission light L1B and the second rear emission light L2B having an intensity less than the second front emission light L2F may be emitted from the side surfaces of the first edge light emitting element 14 and the second edge light emitting element 114 facing the first reflector 30. Furthermore, first rear-emitted light L1B having an intensity lower than the first front-emitted light L1F and second rear-emitted light L2F having an intensity higher than the second rear-emitted light L2B may be emitted from the side surfaces of the first edge-light-emitting element 14 and the second edge-light-emitting element 114 facing the second reflector 32. This improves the symmetry of the radiation pattern characteristics of the semiconductor light-emitting device 10.

[0160] That is, in this embodiment, the first edge light emitting element 14 includes a first front light emitting surface FS1 and a first rear light emitting surface BS1 that emit laser light with relatively different intensities. The second edge light emitting element 114 includes a second front light emitting surface FS2 and a second rear light emitting surface BS2 that emit laser light with relatively different intensities. In this case, the both edge light emitting elements 14, 114 are arranged so that the first front light emitting surface FS1 and the second rear light emitting surface BS2 face the first reflecting surface 30X2, and the first rear light emitting surface BS1 and the second front light emitting surface FS2 face the second reflecting surface 32X2, facing opposite to each other.

[0161] 10 , the second edge light emitting element 114 has a front surface electrode 116A provided on the front surface 114A and a back surface electrode 116B provided on the back surface 114B. In one example, the front surface electrode 116A may constitute an anode electrode of the second edge light emitting element 114. The back surface electrode 116B may constitute a cathode electrode of the second edge light emitting element 114.

[0162] 8, in a plan view, the element surface electrode 116A may have a rectangular shape with its longitudinal direction in the X direction and its lateral direction in the Y direction. The element surface electrode 116A may be provided inside the outer periphery of the element surface 114A of the second edge-emitting element 114.

[0163] The shape and position of the element surface electrode 116A are not limited to those described above. The element surface electrode 116A may cover the entire element surface 114A. The element surface electrode 116A may cover a portion of the element surface 114A. In other words, a portion of the element surface 114A may be exposed from the element surface electrode 116A. The element surface electrode 116A may be rectangular with the Y direction as the longitudinal direction and the X direction as the lateral direction. The element surface electrode 116A may also be circular, polygonal, or the like.

[0164] As shown in FIG. 10 , the element back surface electrode 116B may be provided over the entire element back surface 114B of the second edge light emitting element 114 in the Y direction. The element back surface electrode 116B may cover the entire element back surface 114B in the X direction. That is, the element back surface electrode 116B may cover the entire element back surface 114B. In another example, although not shown, the element back surface electrode 116B may cover a portion of the element back surface 114B. In other words, a portion of the element back surface 114B may be exposed from the element back surface electrode 116B. In one example, the element back surface electrode 116B may be provided inside the outer periphery of the element back surface 114B in the X direction. The element back surface electrode 116B may be rectangular, circular, or regular polygonal in plan view.

[0165] 8 , the semiconductor light emitting device 10 may include a second wire W2. The element surface electrode 116A of the second edge light emitting element 114 may be connected to the first surface electrode 20A. In this embodiment, the element surface electrode 116A is connected to the protrusion 20A2 of the first surface electrode 20A by the second wire W2. Specifically, the portion of the element surface electrode 116A closer to the fourth element side surface 114Y2 is connected to the protrusion 20A2 of the first surface electrode 20A that is not connected to the first edge light emitting element 14 by the second wire W2.

[0166] The back surface electrode 116B of the second edge light emitting element 114 may be connected to the second surface electrode 20B. In this embodiment, the back surface electrode 116B is connected to the second surface electrode 20B via the submount substrate 26.

[0167] In this embodiment, a first edge light emitting element 14 and a second edge light emitting element 114 are provided on a submount substrate 26. The first edge light emitting element 14 and the second edge light emitting element 114 are aligned in the X direction in a plan view and are arranged side by side in the Y direction on the submount surface 26A. Specifically, in a plan view, the first edge light emitting element 14 is located closer to the third submount side surface 26Y1 of the submount substrate 26. In a plan view, the second edge light emitting element 114 is located closer to the fourth submount side surface 26Y2 of the submount substrate 26.

[0168] Corresponding to the first edge surface light emitting element 14 and the second edge surface light emitting element 114 being aligned in the Y direction, the submount substrate 26 may be rectangular with the Y direction as the longitudinal direction and the X direction as the short side direction.

[0169] 9 and 10 , the first edge light emitting element 14 and the second edge light emitting element 114 may be bonded to the submount substrate 26 by conductive bonding materials SD3 and SD4, respectively. The conductive bonding material SD3 bonding the first edge light emitting element 14 to the submount substrate 26 and the conductive bonding material SD4 connecting the second edge light emitting element 114 to the submount substrate 26 may be spaced apart from each other. In other words, the first edge light emitting element 14 and the second edge light emitting element 114 may be bonded separately by conductive bonding materials. The first edge light emitting element 14 and the second edge light emitting element 114 may also be bonded by a single conductive bonding material.

[0170] (Operation of Second Embodiment) The operation of this embodiment will be described using Figures 11 and 12. Figures 11 and 12 show the radiation pattern characteristics of the semiconductor light emitting device 10 when the first edge light emitting element 14 and the second edge light emitting element 114 are edge light emitting elements having the same light emission characteristics. Figure 11 is a graph showing the far field pattern in the X direction of the semiconductor light emitting device 10 of the second embodiment. Figure 12 is a graph showing the far field pattern in the Y direction of the semiconductor light emitting device 10 of the second embodiment.

[0171] As shown in Fig. 11, the radiation pattern characteristics of the semiconductor light-emitting device 10 in the X direction have a high degree of symmetry compared to the radiation pattern characteristics of the semiconductor light-emitting device 10 shown in Fig. 6. Furthermore, the relative light intensity near the reference angle (0°) is greater compared to the radiation pattern characteristics of the semiconductor light-emitting device 10 shown in Fig. 6. In other words, while peaks are present on both sides of the reference angle (0°), sufficient intensity is also ensured near the reference angle (0°).

[0172] 12 also has a higher degree of symmetry than the radiation pattern characteristic of the semiconductor light-emitting device 10 shown in FIG. 7 . The first edge-emitting element 14 and the second edge-emitting element 114 may be edge-emitting elements having different light-emitting characteristics. For example, the first edge-emitting element 14 may be configured so that the first front-emitting surface FS1 and the first rear-emitting surface BS1 emit light of the same intensity, and the second edge-emitting element 114 may be configured so that the second front-emitting surface FS2 emits light of greater intensity than the second rear-emitting surface BS2. This allows for a radiation pattern characteristic in which the light emitted from the second front-emitting surface FS2 and reflected by the second reflecting surface 32X2 has a high intensity in the direction of travel. The magnitude relationship between the intensities of the light emitted by the first front-emitting surface FS1, the first rear-emitting surface BS1, the second front-emitting surface FS2, and the second rear-emitting surface BS2 is not limited to the above and can be changed according to the desired radiation pattern characteristic.

[0173] (Effects of Second Embodiment) The semiconductor light emitting device 10 of this embodiment has the following advantages in addition to the advantages (1-1) to (1-7) of the first embodiment.

[0174] (2-1) The semiconductor light-emitting device 10 further includes a second edge light-emitting element 114 provided on the substrate 12 separately from the first edge light-emitting element 14. The second edge light-emitting element 114 includes a second front light-emitting surface FS2 and a second rear light-emitting surface BS2, which are both end surfaces in the X direction, which is a first direction. The second edge light-emitting element 114 is configured to emit light from the second front light-emitting surface FS2 and the second rear light-emitting surface BS2. The first edge light-emitting element 14 and the second edge light-emitting element 114 are arranged spaced apart in the Y direction, which is a second direction that intersects both the Z direction, which is the thickness direction, and the X direction.

[0175] According to this configuration, by including both the first edge light emitting element 14 and the second edge light emitting element 114 as light emitting elements, the semiconductor light emitting device 10 can have a high output. (2-2) The intensity of the first front-emitting light L1F emitted from the first front-emitting surface FS1 is greater than the intensity of the first rear-emitting light L1B emitted from the first rear-emitting surface BS1. The intensity of the second front-emitting light L2F emitted from the second front-emitting surface FS2 is greater than the intensity of the second rear-emitting light L2B emitted from the second rear-emitting surface BS2. The second edge light emitting element 114 is disposed so that the second front-emitting surface FS2 faces the second reflecting surface 32X2 and the second rear-emitting surface BS2 faces the first reflecting surface 30X2.

[0176] According to this configuration, light from the first front light-emitting surface FS1 and the second rear light-emitting surface BS2 is emitted toward the first reflector 30. Furthermore, light from the first rear light-emitting surface BS1 and the second front light-emitting surface FS2 is emitted toward the second reflector 32. This makes it easier to improve the symmetry of the radiation pattern characteristics of the semiconductor light-emitting device 10.

[0177] In the second embodiment, the both end surface light emitting elements 14, 114 have the same light emission characteristics, but this is not limited thereto. For example, the second end surface light emitting element 114 may have light emission characteristics different from those of the first end surface light emitting element 14. In this case, by combining the first end surface light emitting element 14 and the second end surface light emitting element 114 having different light emission characteristics, it is easy to adjust the radiation pattern characteristics of the semiconductor light emitting device 10 to desired characteristics.

[0178] Third Embodiment A semiconductor light emitting device 10 according to a third exemplary embodiment of the present disclosure will be described with reference to Fig. 13 and Fig. 14. Fig. 13 is a schematic cross-sectional view of the semiconductor light emitting device 10 according to the third embodiment. Fig. 14 is a schematic plan view showing a modification of the semiconductor light emitting device 10 according to the third embodiment.

[0179] 13 and 14, components similar to those in FIG. 3 are denoted by the same reference numerals. The semiconductor light emitting device 10 of this embodiment differs from the sealing member 40 of the semiconductor light emitting device 10 mainly in that it includes a sealing member 301 having a transmissive region 302 and a diffusing region 306. In the following description, detailed description of components similar to those of the semiconductor light emitting device 10 may be omitted.

[0180] 13 , the sealing member 301 includes a diffusing material 304 that diffuses light. In detail, the sealing member 301 includes a transmission region 302 that transmits light emitted by the first edge light emitting element 14, and a diffusion region 306 that includes the diffusing material 304. The diffusion region 306 surrounds the transmission region 302.

[0181] The transmissive region 302 covers the first edge light emitting element 14. The first edge light emitting element 14, including the first front light emitting surface FS1 and the first rear light emitting surface BS1, is covered by the transmissive region 302. In this embodiment, the transmissive region 302 covers the entire first edge light emitting element 14 and the submount substrate 26. The transmissive region 302 also covers a portion of the substrate surface 12A. Specifically, the transmissive region 302 covers a portion of the substrate surface 12A, a portion of the first surface electrode 20A, and a portion of the second surface electrode 20B.

[0182] Because the transmissive region 302 is in contact with the substrate surface 12A and the surface electrode 20, surface tension acts between the transmissive region 302 and the substrate surface 12A and the surface electrode 20. This makes it easier to maintain the shape of the transmissive region 302 in the step of providing the transmissive region 302 in the manufacturing process.

[0183] The transmissive region 302 is provided at a distance from the first reflector 30 and the second reflector 32. A diffusion region 306 is provided between the transmissive region 302 and the first reflector 30 and between the transmissive region 302 and the second reflector 32. In other words, when viewed from the Y direction, the transmissive region 302 is entirely surrounded by the substrate 12 and the diffusion region 306.

[0184] Although not shown, the transmissive region 302 may be provided apart from the third reflector 34 and the fourth reflector 36. In other words, a diffusion region 306 may be provided between the transmissive region 302 and the third reflector 34 and between the transmissive region 302 and the fourth reflector 36.

[0185] The transmissive region 302 does not include the diffusing material 304 or has a lower concentration of the diffusing material 304 than the diffusion region 306. If the diffusing material 304 is present near the first front light-emitting surface FS1 and the first rear light-emitting surface BS1 of the first edge light-emitting element 14, the thermal load near the first front light-emitting surface FS1 and the first rear light-emitting surface BS1 is likely to be large. In this regard, in the semiconductor light-emitting device 10 of this embodiment, the areas near the first front light-emitting surface FS1 and the first rear light-emitting surface BS1 of the first edge light-emitting element 14 are covered by the transmissive region 302 that does not include the diffusing material 304 or has a lower concentration of the diffusing material 304 than the diffusion region 306. This makes it possible to suppress the thermal load near the first front light-emitting surface FS1 and the first rear light-emitting surface BS1.

[0186] The transmissive region 302 may be made of a material softer than the material that constitutes the diffusion region 306. In other words, the transmissive region 302 and the diffusion region 306 may be made of different materials. However, this is not limiting, and for example, the transmissive region 302 may be made of a material that is harder than the material that constitutes the diffusion region 306, or both regions 302 and 306 may be made of the same material.

[0187] The diffusion region 306 includes a diffusion material 304. The diffusion material 304 is arranged as a plurality of light-diffusing particles dispersed within the sealing member 301. The diffusion material 304 diffuses light within the diffusion region 306 by reflecting (scattering) the light at the interface between the resin within the diffusion region 306 and the diffusion material 304. The diffusion material 304 serves to widen the beam angle by diffusing, within the diffusion region 306, the light emitted from the first front light-emitting surface FS1 and the first rear light-emitting surface BS1 of the first edge-light-emitting element 14.

[0188] The material of the diffusing material 304 is not particularly limited, but may be, for example, silica or other glass materials. In one example, spherical silica filler is used as the diffusing material 304. The particle size of the diffusing material 304 is not particularly limited, but for example, a particle size sufficiently small relative to the wavelength of the light emitted from the first edge-emitting element 14 is selected so that scattering occurs predominantly.

[0189] The diffusing material 304 is mixed with the diffusion region 306 at a predetermined blend ratio. In one example, the diffusing material 304 is evenly dispersed within the diffusion region 306. The blend ratio of the diffusing material 304 to the resin of the diffusion region 306 is not particularly limited, and may be greater than 0% and less than 100%. The greater the blend ratio of the diffusing material 304, the wider the beam angle of light from the first edge light emitting element 14 can be. Furthermore, by limiting the upper limit of the blend ratio of the diffusing material 304 to a predetermined value, a decrease in the radiation intensity of the semiconductor light emitting device 10 can be suppressed.

[0190] In one example, a material having a smaller linear expansion coefficient than the resin of the sealing member 301 is selected as the diffusion material 304. In this configuration, the diffusion material 304 can reduce the thermal stress generated in the sealing member 301 compared to when the sealing member 301 is made of resin only. This can prevent the first wire W1 from breaking due to the thermal stress of the sealing member 301.

[0191] The first wire W1 is entirely provided within the transmissive region 302. This makes it possible to suppress inconveniences caused by the first wire W1 being disposed across the transmissive region 302 and the diffusion region 306. In particular, if the first wire W1 is disposed across the transmissive region 302 and the diffusion region 306, thermal stress is likely to be applied to the first wire W1 due to the difference in linear expansion coefficients between the transmissive region 302 and the diffusion region 306. This can lead to inconveniences such as breakage of the first wire W1. In this regard, in the present embodiment, the first wire W1 is entirely provided within the transmissive region 302. This makes it possible to suppress the above-mentioned inconveniences.

[0192] (Effects of Third Embodiment) The semiconductor light emitting device 10 of this embodiment has the following advantages in addition to the advantages (1-1) to (1-7) of the first embodiment.

[0193] (3-1) The sealing member 301 includes a diffusing material 304 that diffuses light. With this configuration, the diffusing material 304 further diffuses the light emitted from the first edge light emitting element 14. This makes it possible to further widen the directivity angle of the light emitted from the semiconductor light emitting device 10 and to suppress excessive reduction in intensity near the center between the two peak angles θp1 and θp2 in the X direction, compared to when the sealing member 301 does not include the diffusing material 304.

[0194] (3-2) The sealing member 301 includes a transmission region 302 through which light emitted by the first edge-emitting element 14 passes, and a diffusion region 306 that includes a diffusion material 304. This configuration can suppress light diffusion compared to a configuration in which the diffusion material 304 is present throughout the sealing member 301, thereby preventing excessive diffusion from causing unintended radiation pattern characteristics.

[0195] (3-3) The first edge light emitting element 14, including the first front light emitting surface FS1 and the first rear light emitting surface BS1, is covered by the transmissive region 302. The diffusion region 306 surrounds the transmissive region 302.

[0196] When the diffusion material 304 is present around the first front light-emitting surface FS1 and the first rear light-emitting surface BS1, a thermal load is likely to be applied to the first front light-emitting surface FS1 and the first rear light-emitting surface BS1 of the first edge-face light-emitting element 14.

[0197] In this regard, according to the present embodiment, the first front light-emitting surface FS1 and the first rear light-emitting surface BS1 of the first edge-light-emitting element 14 are covered by the transmissive region 302, and no diffusing material 304 is present around the first front light-emitting surface FS1 and the first rear light-emitting surface BS1. This reduces the thermal load on the first edge-light-emitting element 14 near the first front light-emitting surface FS1 and the first rear light-emitting surface BS1.

[0198] (3-4) The first edge light emitting element 14 and the first wire W1 are provided in the transmissive region 302. The material that constitutes the transmissive region 302 is softer than the material that constitutes the diffusion region 306.

[0199] With this configuration, the first edge-emitting element 14 and the first wire W1 are covered with the transmissive region 302, which is softer than the diffusion region 306. This reduces stress applied to the first edge-emitting element 14 and the wire W1. This prevents problems that may arise from stress, such as peeling between the transmissive region 302 and the first edge-emitting element 14 and breakage of the first wire W1.

[0200] (3-5) The semiconductor light emitting device 10 includes a conductive front electrode 20 located on the substrate 12. The transmissive region 302 covers at least a portion of the front electrode 20 and also covers the first edge light emitting element 14.

[0201] According to this configuration, the transmissive region 302 covers the surface electrode 20 in addition to the first edge-emitting element 14. This causes surface tension to act in the contact area between the transmissive region 302 and the surface electrode 20. This surface tension makes it easier for the transmissive region 302 to maintain its shape compared to when the transmissive region 302 does not cover the surface electrode 20.

[0202] 14, in the semiconductor light emitting device 10, the entire sealing member 301 may be a diffusion region 306 containing a diffusion material. In other words, the sealing member 301 does not need to include the transmissive region 302.

[0203] Fourth Embodiment A semiconductor light emitting device 10 according to a fourth exemplary embodiment of the present disclosure will be described with reference to Fig. 15. Fig. 15 is a schematic cross-sectional view of the semiconductor light emitting device 10 according to the fourth embodiment.

[0204] For ease of understanding, the same components in Fig. 15 as those in Fig. 3 and Fig. 13 are denoted by the same reference numerals. The semiconductor light emitting device 10 in Fig. 15 differs from the semiconductor light emitting device 10 in Fig. 13 mainly in the shapes of the transmissive region and diffusion region of the sealing member and the configuration of the connection portion. In the following description, detailed description of the same components as those in the semiconductor light emitting devices 10 of the first and third embodiments may be omitted.

[0205] 15 , the semiconductor light-emitting device 10 includes a transmissive region 302 and a diffusion region 306 located above the transmissive region 302. The transmissive region 302 includes a transmissive top surface 402 as its upper surface in the Z direction. The transmissive top surface 402 faces the same side as the substrate surface 12A. The transmissive top surface 402 is configured to be substantially parallel to the substrate surface 12A. The transmissive top surface 402 is located above the element surface 14A of the first edge light-emitting element 14. The transmissive top surface 402 may be located above the first wire W1. In other words, the transmissive region 302 may cover the entire first edge light-emitting element 14 and the first wire W1.

[0206] The transmissive region 302 is in contact with the substrate surface 12A. Specifically, the transmissive region 302 covers the entire portion of the substrate surface 12A that is exposed from the first to fourth reflectors 30, 32, 34, and 36. The transmissive region 302 also covers a portion of the first reflector 30 and the second reflector 32. Although not shown, the transmissive region 302 may also cover a portion of the third reflector 34 and the fourth reflector 36. In other words, it can be said that the semiconductor light emitting device 10 is sealed by the transmissive region 302 of the sealing member 301.

[0207] In the semiconductor light emitting device 10, the encapsulating member 301 includes a diffusion region 306 located on the transmissive region 302. In other words, the diffusion region 306 is provided on the surface layer of the encapsulating member 301. The diffusion region 306 is provided on and in contact with the transmissive upper surface 402 of the transmissive region 302. The diffusion region 306 covers the entire transmissive upper surface 402 of the transmissive region 302.

[0208] In this embodiment, the upper surface of the diffusion region 306 is flush with the first reflector upper surface 30A and the second reflector upper surface 32A. The upper surface of the diffusion region 306 may be located higher than the first reflector upper surface 30A and the second reflector upper surface 32A, or may be located closer to the substrate 12.

[0209] In this embodiment, the Z-direction dimension of the diffusion region 306 is smaller than the Z-direction dimension of the transmission region 302. The Z-direction dimension of the diffusion region 306 may be larger than the Z-direction dimension of the transmission region 302.

[0210] The semiconductor light emitting device 10 includes a connection portion 404 instead of the connection portion 24. The connection portion 404 includes a plurality of vias 406 located between the front surface electrode 20 and the back surface electrode 22, and a plurality of through electrodes 408 that fill each of the vias 406. In the illustrated example, one via 406 and one through electrode 408 are provided between the first front surface electrode 20A and the first back surface electrode 22A. Four vias 406 and four through electrodes 408 are provided between the second front surface electrode 20B and the second back surface electrode 22B.

[0211] The number of vias 406 and through electrodes 408 is not limited to the above. Two or more vias 406 and through electrodes 408 may be provided between the first front surface electrode 20A and the first back surface electrode 22A. Furthermore, four or more vias 406 and through electrodes 408 may be provided between the second front surface electrode 20B and the second back surface electrode 22B, or three or less vias 406 and through electrodes 408 may be provided.

[0212] (Effects of Fourth Embodiment) The semiconductor light emitting device 10 of this embodiment has the following advantages in addition to the advantages (1-1) to (1-7) of the first embodiment and the advantages (3-1) to (3-5) of the third embodiment.

[0213] (4-1) The diffusion region 306 is located in the surface layer of the sealing member 301. For example, the diffusion region 306 is located at a position higher than the first edge light emitting element 14. This makes it possible to prevent the light emitted from the light emitting surfaces FS1 and BS1 toward the reflecting surfaces 30X2 and 32X2 from being diffused by the diffusing material 304. This makes it possible to prevent problems that can occur due to excessive diffusion, such as light emitted from the light emitting surfaces FS1 and BS1 not reaching the reflecting surfaces 30X2 and 32X2 or being reflected in an unintended direction.

[0214] (4-2) The connection portion 404 includes a plurality of vias 406 located between the front surface electrode 20 and the back surface electrode 22, and a plurality of through electrodes 408 that fill the respective vias 406. This makes it easier to accommodate cases where a complex wiring pattern is required.

[0215] Fifth Embodiment A semiconductor light emitting device 10 according to a fifth exemplary embodiment of the present disclosure will be described with reference to Fig. 16 and Fig. 17. Fig. 16 is a schematic end view of the semiconductor light emitting device 10 according to the fifth embodiment. Fig. 17 is a schematic cross-sectional view showing a modification of the semiconductor light emitting device 10 according to the fifth embodiment.

[0216] For ease of understanding, the same reference numerals are used in Figures 16 and 17 to designate components similar to those in Figures 3 and 13. The semiconductor light-emitting device 10 in Figure 16 differs from the semiconductor light-emitting device 10 in Figure 1 mainly in the shape of the sealing member. In the following description, detailed description of components similar to those in the semiconductor light-emitting device 10 may be omitted.

[0217] 16 , the semiconductor light emitting device 10 includes a sealing member 501. The sealing member 501 includes a sealing upper surface 501A, which is the upper surface in the Z direction, and a first groove 502A and a second groove 502B. The first groove 502A and the second groove 502B are recesses extending from the sealing upper surface 501A of the sealing member 501 toward the substrate 12. The first groove 502A is located between the first edge light emitting element 14 and the first reflector 30. The second groove 502B is located between the first edge light emitting element 14 and the second reflector 32.

[0218] The first groove 502A includes a first bottom wall 504A, a first opposing sidewall 506A, and a first inclined sidewall 508A. The first bottom wall 504A constitutes the bottom wall of the first groove 502A. The first opposing sidewall 506A and the first inclined sidewall 508A are sidewalls on both sides of the first groove 502A in the X direction. The first opposing sidewall 506A and the first inclined sidewall 508A connect the sealing upper surface 501A and the first bottom wall 504A.

[0219] The first bottom wall 504A is located closer to the substrate 12 in the Z direction than the front surface 14A of the first edge-emitting element 14. In the illustrated example, the first bottom wall 504A is located closer to the substrate 12 than the back surface 14B of the first edge-emitting element 14. In other words, the first opposing sidewall 506A and the first inclined sidewall 508A are provided in the Z direction from the position of the sealing upper surface 501A to the position of the back surface 14B of the element.

[0220] The first opposing sidewall 506A is located closer to the first edge light emitting element 14 than the sidewalls on both sides of the first groove portion 502A in the X direction. The first opposing sidewall 506A faces the first front light emitting surface FS1 of the first edge light emitting element 14 in the X direction. In the illustrated example, the first opposing sidewall 506A is disposed substantially perpendicular to the sealing top surface 501A and the substrate surface 12A. The first opposing sidewall 506A may be inclined with respect to the sealing top surface 501A and the substrate surface 12A.

[0221] The first inclined sidewall 508A is the sidewall on both sides of the first groove portion 502A in the X direction that is closer to the first reflector 30. In other words, the first inclined sidewall 508A is located farther from the first front light-emitting surface FS1 than the first opposing sidewall 506A. The first inclined sidewall 508A is configured to transmit a portion of the light emitted from the first front light-emitting surface FS1 and reflect a portion of the light. In other words, the light emitted from the first front light-emitting surface FS1 is reflected in multiple stages by the first inclined sidewall 508A and the first reflecting surface 30X2.

[0222] The first inclined sidewall 508A is inclined with respect to the Z direction. In other words, the first inclined sidewall 508A is inclined with respect to the substrate surface 12A. In the illustrated example, the first inclined sidewall 508A is inclined at a fifth angle θ5 with respect to the substrate surface 12A.

[0223] The fifth angle θ5 may be greater than the first angle θ1. In this case, the light emitted from the first front light-emitting surface FS1 reflected by the first inclined sidewall 508A is more likely to be directed toward the center in the X direction of the semiconductor light-emitting device 10 than the light reflected by the first reflecting surface 30X2. Therefore, the light intensity near the center in the X direction of the semiconductor light-emitting device 10 is more likely to be greater than in a case where the first groove portion 502A is not included.

[0224] The fifth angle θ5 may be an angle smaller than the first angle θ1. In this case, the light emitted from the first front light-emitting surface FS1 reflected by the first inclined sidewall 508A is more likely to be directed outward from the center in the X direction of the semiconductor light-emitting device 10 than the light reflected by the first reflecting surface 30X2. Therefore, the light intensity is more likely to be greater outside the center in the X direction of the semiconductor light-emitting device 10 than in a case where the first groove portion 502A is not included.

[0225] The second groove 502B includes a second bottom wall 504B, a second opposing side wall 506B, and a second inclined side wall 508B. The second bottom wall 504B constitutes the bottom wall of the second groove 502B. The second opposing side wall 506B and the second inclined side wall 508B are side walls on both sides of the second groove 502B in the X direction. The second opposing side wall 506B and the second inclined side wall 508B connect the sealing top surface 501A and the second bottom wall 504B.

[0226] The second bottom wall 504B is located closer to the substrate 12 in the Z direction than the front surface 14A of the first edge-emitting element 14. In the illustrated example, the second bottom wall 504B is located closer to the substrate 12 than the back surface 14B of the first edge-emitting element 14. In other words, the second opposing sidewall 506B and the second inclined sidewall 508B are provided in the Z direction from the position of the sealing upper surface 501A to the position of the back surface 14B of the element.

[0227] The second opposing sidewall 506B is located closer to the first edge light emitting element 14 than the sidewalls on both sides of the second groove portion 502B in the X direction. The second opposing sidewall 506B faces the first rear light emitting surface BS1 of the first edge light emitting element 14 in the X direction. In the illustrated example, the second opposing sidewall 506B is disposed substantially perpendicular to the sealing top surface 501A and the substrate surface 12A. The second opposing sidewall 506B may be inclined with respect to the sealing top surface 501A and the substrate surface 12A.

[0228] The second inclined sidewall 508B is the sidewall on both sides of the second groove portion 502B in the X direction that is closer to the second reflector 32. In other words, the second inclined sidewall 508B is located farther from the first rear light-emitting surface BS1 than the second opposing sidewall 506B. The second inclined sidewall 508B is configured to transmit a portion of the light emitted from the first rear light-emitting surface BS1 and reflect a portion of the light. In other words, the light emitted from the first rear light-emitting surface BS1 is reflected in multiple stages by the second inclined sidewall 508B and the second reflecting surface 32X2.

[0229] The second inclined sidewall 508B is inclined with respect to the Z direction. In other words, the second inclined sidewall 508B is inclined with respect to the substrate surface 12A. In the example shown in the figure, the second inclined sidewall 508B is inclined at a sixth angle θ6 with respect to the substrate surface 12A.

[0230] The sixth angle θ6 may be greater than the second angle θ2. In this case, the light emitted from the first rear light-emitting surface BS1 reflected by the second inclined sidewall 508B is more likely to be directed toward the center in the X direction of the semiconductor light-emitting device 10 than the light reflected by the second reflecting surface 32X2. Therefore, the light intensity near the center in the X direction of the semiconductor light-emitting device 10 is more likely to be greater than in a case where the second groove portion 502B is not included.

[0231] The sixth angle θ6 may be an angle smaller than the second angle θ2. In this case, the light emitted from the first rear light-emitting surface BS1 reflected by the second inclined sidewall 508B is more likely to be directed outward from the center in the X direction of the semiconductor light-emitting device 10 than the light reflected by the second reflecting surface 32X2. Therefore, the light intensity is more likely to be greater outside the center in the X direction of the semiconductor light-emitting device 10 than in a case where the second groove portion 502B is not included.

[0232] The first bottom wall 504A and the second bottom wall 504B may be partially or entirely curved, and the first sloping side wall 508A, the second sloping side wall 508B, the first opposing side wall 506A, and the second opposing side wall 506B may be partially or entirely curved.

[0233] (Effects of Fifth Embodiment) The semiconductor light emitting device 10 of this embodiment has the following advantages in addition to the advantages (1-1) to (1-7) of the first embodiment.

[0234] (5-1) The sealing member 501 includes a sealing upper surface 501A, which is the upper surface in the Z direction, and a first groove 502A and a second groove 502B extending from the sealing upper surface 501A toward the substrate 12. The first groove 502A includes a first opposing sidewall 506A facing the first front light-emitting surface FS1 and a first inclined sidewall 508A that is inclined with respect to the thickness direction and is located farther away from the first front light-emitting surface FS1 than the first opposing sidewall 506A. The second groove 502B includes a second opposing sidewall 506B facing the first rear light-emitting surface BS1 and a second inclined sidewall 508B that is inclined with respect to the thickness direction and is located farther away from the first rear light-emitting surface BS1 than the second opposing sidewall 506B.

[0235] With this configuration, a portion of the light emitted from the first front light-emitting surface FS1 of the first edge-emitting element 14 is reflected by the first inclined sidewall 508A of the first groove 502A. A portion of the light emitted from the first rear light-emitting surface BS1 of the first edge-emitting element 14 is reflected by the second inclined sidewall 508B of the second groove 502B.

[0236] Light emitted from the first edge-emitting element 14 is reflected at multiple stages by both inclined sidewalls 508A, 508B and both reflectors 30, 32. This makes it possible to suppress local bias in the radiation pattern characteristics. Furthermore, the direction of the reflected light by the first inclined sidewall 508A and the second inclined sidewall 508B can be adjusted by changing the fifth angle θ5 and the sixth angle θ6. This makes it possible to adjust the radiation pattern characteristics by adjusting the first inclined sidewall 508A and the second inclined sidewall 508B.

[0237] (Modification of Fifth Embodiment) Fig. 17 is a cross-sectional view showing a modification of the semiconductor light emitting device 10 of the fifth embodiment. As shown in Fig. 17, a diffusion sealing member 510 including a diffusing material 304 may be provided in the first groove portion 502A and the second groove portion 502B as a sealing member separate from the sealing member 501. That is, the diffusion sealing member 510 that diffuses light may be embedded in the first groove portion 502A and the second groove portion 502B. The diffusing material 304 may be the same as the diffusing material 304 described in the third embodiment.

[0238] The sealing member 40 does not have to include the diffusing material 304. The sealing member 40 may be made of a light-transmitting material different from the sealing member 40. (Effects of the Modified Example of the Fifth Embodiment) The semiconductor light-emitting device 10 of the modified example has the following advantages in addition to the effect (5-1) of the fifth embodiment.

[0239] (5-2) The first groove 502A and the second groove 502B are filled with a diffusion sealing member 510 including a diffusing material 304 that diffuses light. With this configuration, light passing through the first groove 502A and the second groove 502B can be diffused by the diffusing material 304 included in the diffusion sealing member 510. This allows the beam angle of light emitted from the semiconductor light emitting device 10 to be widened.

[0240] Sixth Embodiment A semiconductor light emitting device 10 according to an exemplary sixth embodiment of the present disclosure will be described with reference to FIGS. 18 to 21 . FIG. 18 is a schematic cross-sectional view of the semiconductor light emitting device 10 according to the sixth embodiment. FIG. 19 is a plan view of the substrate 12 of the semiconductor light emitting device 10 according to the sixth embodiment. FIG. 20 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device 10 according to the sixth embodiment. FIG. 21 is a schematic cross-sectional view showing a modified example of the semiconductor light emitting device 10 according to the sixth embodiment.

[0241] For ease of understanding, the same reference numerals are used in Figures 18 to 21 to designate components that are the same as those in Figures 3 and 13. The semiconductor light-emitting device 10 in Figure 18 differs from the semiconductor light-emitting device 10 in Figure 1 mainly in the configuration of the sealing member and the shape of the connection portion. In the following description, detailed description of components that are the same as those in the semiconductor light-emitting device 10 may be omitted.

[0242] 18 , the semiconductor light emitting device 10 includes a sealing member 601. The sealing member 601 includes a sealing upper surface 601A that is the upper surface in the Z direction, a base body 602 that transmits light emitted from the first front light emitting surface FS1 and the first rear light emitting surface BS1, and a reflector 604 that is made of a material with a higher reflectivity than the base body 602. In this embodiment, the base body 602 and the reflector 604 are located on the substrate 12. The reflector 604 is provided on the substrate 12 in contact with it. The base body 602 is provided on the reflector 604 in contact with it. In other words, the reflector 604 is located between the substrate 12 and the base body 602 in the Z direction.

[0243] The base body 602 may be made of the same material as the sealing member 40 of the first embodiment. The base body 602 covers the entire first edge light emitting element 14. In detail, the base body 602 covers four side surfaces of the first edge light emitting element 14, including the first front light emitting surface FS1 and the first rear light emitting surface BS1, and the element surface 14A.

[0244] The base body 602 includes a base top surface 602A as an upper end surface in the Z direction. In the illustrated example, the base top surface 602A constitutes the entire sealing top surface 601A when viewed from the Y direction. The base top surface 602A does not have to constitute the entire sealing top surface 601A when viewed from the Y direction. The sealing top surface 601A may be constituted by the base top surface 602A and the reflector 604.

[0245] The sealing top surface 601A is provided flush with the first reflector top surface 30A and the second reflector top surface 32A. The sealing top surface 601A does not have to be flush with the first reflector top surface 30A and the second reflector top surface 32A. The sealing top surface 601A may be located higher than the first reflector top surface 30A and the second reflector top surface 32A, or may be located closer to the substrate 12.

[0246] A portion of the base body 602 may be in contact with the first reflecting surface 30X2 of the first reflector 30 and the second reflecting surface 32X2 of the second reflector 32. The reflector 604 is in contact with the substrate 12, the first reflector 30, and the second reflector 32. The reflector 604 may cover the substrate surface 12A and portions of the first reflecting surface 30X2 and the second reflecting surface 32X2. In the example shown, the reflector 604 covers the entire first reflecting surface 30X2 and the second reflecting surface 32X2.

[0247] Furthermore, the reflector 604 covers the submount substrate 26. The reflector 604 covers the entire side surface of the submount substrate 26. The reflector 604 is made of a material having a higher light reflectance than the base body 602. In one example, the reflector 604 may be made of a material having a higher light reflectance than the substrate surface 12A. In one example, the reflector 604 is made of a white resin material. For example, an epoxy resin mixed with titanium oxide or silica may be used as the white resin material.

[0248] The reflector 604 includes a surface 606. It can be said that the base body 602 is provided on the surface 606 of the reflector 604. The surface 606 of the reflector 604 includes a first end 606A that is positioned lower than the first edge-emitting element 14 and a second end 606B that is positioned higher than the first edge-emitting element 14.

[0249] The first end 606A is disposed between the submount back surface 26B and the element back surface 14B in the Z direction, and is disposed, for example, at the same height as the submount front surface 26A of the submount substrate 26. The second end 606B is disposed, for example, between the element front surface 14A and the first reflector top surface 30A and the second reflector top surface 32A in the Z direction, and is disposed, for example, at the same height as both reflector top surfaces 30A and 32A.

[0250] The surface 606 is concave and curved toward the reflector upper surfaces 30A, 32A as it extends from the first edge-light-emitting element 14 toward the first reflector 30 and the second reflector 32. The surface 606 faces both the first front light-emitting surface FS1 and the first rear light-emitting surface BS1. Specifically, the surface 606 of the reflector 604 is provided between the first front light-emitting surface FS1 of the first edge-light-emitting element 14 and the first reflecting surface 30X2 of the first reflector 30. The surface 606 of the reflector 604 is also provided between the first rear light-emitting surface BS1 of the first edge-light-emitting element 14 and the second reflecting surface 32X2 of the second reflector 32.

[0251] The reflector 604 reflects a portion of light by the surface 606 and transmits a portion of the light. Specifically, the reflector 604 is configured to transmit a portion of the light emitted from the first front-emitting surface FS1 and the first rear-emitting surface BS1 and reflect a portion of the light by the surface 606. As a result, a portion of the first front-emitting light L1F and the first rear-emitting light L1B emitted from the first front-emitting surface FS1 and the first rear-emitting surface BS1 is reflected upward by the surface 606. In other words, the surface 606 of the reflector 604 is configured in a curved concave shape so as to reflect the light emitted from the first edge-emitting element 14 upward in the semiconductor light-emitting device 10. Furthermore, the light emitted from the first front-emitting surface FS1 is reflected at multiple stages by the surface 606 of the reflector 604 and the first reflecting surface 30X2. The light emitted from the first rear light-emitting surface BS1 is reflected at multiple stages by the surface 606 of the reflector 604 and the second reflecting surface 32X2.

[0252] Although not shown, the reflector 604 may cover the third reflecting surface 34Y2 and the fourth reflecting surface 36Y2, similar to the first reflecting surface 30X2 and the second reflecting surface 32X2. In other words, the reflector 604 may cover the entire third reflecting surface 34Y2 and the fourth reflecting surface 36Y2.

[0253] The reflector 604 may cover only a portion of the third reflecting surface 34Y2 and the fourth reflecting surface 36Y2. For example, the surface 606 of the reflector 604 may be at the same height in the Z direction as the vicinity of the first edge light emitting element 14 at the position where it contacts the third reflecting surface 34Y2. Furthermore, the surface 606 of the reflector 604 may be at the same height in the Z direction as the vicinity of the first edge light emitting element 14 at the position where it contacts the fourth reflecting surface 36Y2. In other words, the Z-direction dimension of the reflector 604 may be constant in the Y direction.

[0254] As shown in Figures 18 and 19, the semiconductor light-emitting device 10 of the sixth embodiment differs from the semiconductor light-emitting device 10 of Figure 1 in the structure of the connection portion 24. As shown in Figures 18 and 19, the semiconductor light-emitting device 10 includes, as the connection portion 24, a first end-face through-hole 608A provided in the first substrate side surface 12X1 and a second end-face through-hole 608B provided in the second substrate side surface 12X2. In this embodiment, the first end-face through-hole 608A is provided at the center of the first substrate side surface 12X1 in the Y direction in a plan view. The first end-face through-hole 608A is recessed from the first substrate side surface 12X1 toward the second substrate side surface 12X2. The second end-face through-hole 608B is provided at the center of the second substrate side surface 12X2 in the Y direction in a plan view. The second end-face through-hole 608B is recessed from the second substrate side surface 12X2 toward the first substrate side surface 12X1.

[0255] The first end face through hole 608A and the second end face through hole 608B each have a substantially semicircular shape in plan view, and both the first end face through hole 608A and the second end face through hole 608B are provided to penetrate the substrate 12 in the Z-axis direction.

[0256] As shown in FIG. 18 , the first end-face through-hole 608A connects the first surface electrode 20A and the first back surface electrode 22A. The first end-face through-hole 608A may be made of, for example, a material containing copper. This electrically connects the first surface electrode 20A and the first back surface electrode 22A via the first end-face through-hole 608A. The second end-face through-hole 608B connects the second surface electrode 20B and the second back surface electrode 22B. The second end-face through-hole 608B may be made of, for example, a material containing Cu. This electrically connects the second surface electrode 20B and the second back surface electrode 22B via the second end-face through-hole 608B.

[0257] 19 , the first surface electrode 20A includes a first end face 610 as a side face closer to the first substrate side face 12X1 of the substrate 12. A portion of the first end face through hole 608A is provided so as to overlap the first end face 610 of the first surface electrode 20A. In other words, a central portion of the first end face 610 in the X-axis direction is provided with a recess recessed from the first end face 610 toward the second substrate side face 12X2.

[0258] The second surface electrode 20B also includes a second end face 612 as a side face closer to the second substrate side face 12X2 of the substrate 12. The second end face through hole 608B is provided so as to overlap the second end face 612 of the second surface electrode 20B. In other words, a recess recessed from the second end face 612 toward the first substrate side face 12X1 is provided in the center of the second surface electrode 20B in the X-axis direction.

[0259] 18 , the first end face through-hole 608A is covered by the first reflector lower surface 30B of the first reflector 30. In this embodiment, the first reflector lower surface 30B covers the entire first end face through-hole 608A. The second end face through-hole 608B is covered by the second reflector lower surface 32B of the second reflector 32. In this embodiment, the second reflector lower surface 32B covers the entire second end face through-hole 608B.

[0260] With this configuration, heat from first front surface electrode 20A is transferred to first back surface electrode 22A via first end face through hole 608A. In addition, heat from first front surface electrode 20A is dissipated from first end face through hole 608A to the outside of semiconductor light emitting device 10. Therefore, the heat dissipation performance of semiconductor light emitting device 10 can be improved.

[0261] Additionally, when the semiconductor light emitting device 10 is mounted on a circuit board using solder paste, a fillet is formed by the first end face through hole 608A. This allows visual confirmation of the state of the semiconductor light emitting device 10 mounted on the circuit board. Furthermore, the formation of the fillet increases the bonding area between the semiconductor light emitting device 10 and the circuit board. This facilitates heat dissipation from the semiconductor light emitting device 10 to the circuit board and improves the bonding strength between the semiconductor light emitting device 10 and the circuit board.

[0262] Similarly, heat from second front surface electrode 20B is transferred to second back surface electrode 22B via second end face through hole 608B. In addition, heat from second front surface electrode 20B is dissipated from second end face through hole 608B to the outside of semiconductor light emitting device 10. Therefore, the heat dissipation performance of semiconductor light emitting device 10 can be improved.

[0263] Additionally, when the semiconductor light emitting device 10 is mounted on a circuit board using solder paste, a fillet is formed by the second end face through hole 608B. This allows visual confirmation of the state of the semiconductor light emitting device 10 mounted on the circuit board. Furthermore, the formation of the fillet increases the bonding area between the semiconductor light emitting device 10 and the circuit board. This facilitates heat dissipation from the semiconductor light emitting device 10 to the circuit board and improves the bonding strength between the semiconductor light emitting device 10 and the circuit board.

[0264] (Effects of Sixth Embodiment) The semiconductor light emitting device 10 of this embodiment has the following advantages in addition to the advantages (1-1) to (1-7) of the first embodiment.

[0265] (6-1) The sealing member 601 includes a base body 602 and a reflector 604. The base body 602 transmits light emitted from the first front light-emitting surface FS1 and the first rear light-emitting surface BS1. The reflector 604 is made of a resin material having a higher reflectance than the base body 602. The reflector 604 is located between the substrate 12 and the base body 602 in the Z direction.

[0266] In the semiconductor light-emitting device 10, a portion of the light emitted from the first edge-emitting element 14 and a portion of the light reflected by both reflective surfaces 30X2 and 32X2 travel toward the substrate 12. A portion of the light traveling toward the substrate 12 is absorbed by the semiconductor light-emitting device 10 (e.g., the substrate 12). This reduces the intensity of the light emitted from the semiconductor light-emitting device 10. According to this configuration, a reflector 604 made of a highly reflective resin material is provided in a position of the sealing member 601 close to the substrate 12. This causes a portion of the light traveling toward the substrate 12 to be reflected upward toward the semiconductor light-emitting device 10 at the boundary between the base body 602 and the reflector 604. This reduces the reduction in the intensity of the light emitted from the semiconductor light-emitting device 10.

[0267] (6-2) The first reflector 30 and the second reflector 32 each include a first reflector upper surface 30A and a second reflector upper surface 32A as end surfaces opposite the substrate 12 in the thickness direction. The reflector 604 covers the first reflecting surface 30X2 and the second reflecting surface 32X2. The surface 606 of the reflector 604 is concave and curved from a position below the first edge-emitting element 14 toward the first reflector 30 and the second reflector 32 toward the reflector upper surfaces 30A and 32A. The surface 606 of the reflector 604 is interposed between the first front light-emitting surface FS1 and the first reflecting surface 30X2, and is also interposed between the first rear light-emitting surface BS1 and the second reflecting surface 32X2.

[0268] As a result, a portion of the light emitted from the first edge-emitting element 14 is reflected upwardly of the semiconductor light-emitting device 10 by the surface 606 of the reflector 604. Therefore, the light emitted from the first edge-emitting element 14 is reflected at multiple stages by the surface 606 of the reflector 604 and both reflecting surfaces 30X2 and 32X2. This makes it possible to suppress local deviations in the radiation pattern characteristics of the semiconductor light-emitting device 10.

[0269] (6-3) The connecting portion 404 includes a first end-face through-hole 608A provided in the first substrate side surface 12X1 and a second end-face through-hole 608B provided in the second substrate side surface 12X2. The first end-face through-hole 608A and the second end-face through-hole 608B penetrate the substrate 12 in the Z direction. The first end-face through-hole 608A electrically connects the first surface electrode 20A and the first back surface electrode 22A. The second end-face through-hole 608B electrically connects the second surface electrode 20B and the second back surface electrode 22B.

[0270] With this configuration, heat from first front surface electrode 20A is transferred to first back surface electrode 22A via first end face through hole 608A. In addition, heat from first front surface electrode 20A is dissipated from first end face through hole 608A to the outside of semiconductor light emitting device 10. Therefore, the heat dissipation performance of semiconductor light emitting device 10 can be improved.

[0271] Additionally, when the semiconductor light emitting device 10 is mounted on a circuit board using solder paste, a fillet is formed by the first end face through hole 608A. This allows visual confirmation of the state of the semiconductor light emitting device 10 mounted on the circuit board. Furthermore, the formation of the fillet increases the bonding area between the semiconductor light emitting device 10 and the circuit board PCB. This facilitates heat dissipation from the semiconductor light emitting device 10 to the circuit board and improves the bonding strength between the semiconductor light emitting device 10 and the circuit board.

[0272] 20 and 21 are cross-sectional views of a modification of the semiconductor light emitting device 10 of the sixth embodiment. As shown in Fig. 20, in the semiconductor light emitting device 10, a base body 602 of a sealing member 601 may include a diffusing material 304 that diffuses light. The diffusing material 304 may have a configuration similar to that of the diffusing material 304 described in the third embodiment.

[0273] 21 , in the semiconductor light emitting device 10, the sealing member 601 may include a transmissive region 302 that covers the first edge light emitting element 14. In detail, the sealing member 601 may include a base body 602 including a diffusing material 304, a reflector 604, and the transmissive region 302. The transmissive region 302 may have a configuration similar to that of the transmissive region 302 of the third embodiment.

[0274] (Other Modifications) The semiconductor light emitting device 10 of each embodiment can be modified as follows. As shown in Fig. 22, the first edge light emitting element 14 may be configured to emit light of the same intensity from the first front light emitting surface FS1 and the first rear light emitting surface BS1. In other words, the first front emitted light L1F and the first rear emitted light L1B may be configured to have the same intensity. This improves the symmetry of the radiation pattern characteristics of the semiconductor device.

[0275] 23 and 24, the semiconductor light emitting device 10 does not need to include the sealing member 40. In other words, the area surrounded by the first to fourth reflectors 30, 32, 34, and 36 may be hollow. As shown in Fig. 24, not including the sealing member 40 tends to reduce the spread of the first front-emitted light L1F and the first rear-emitted light L1B, while tending to increase the intensity of the light emitted from the semiconductor light emitting device 10.

[0276] 25 and 26 , the semiconductor light-emitting device 10 may have a rectangular shape with the longitudinal direction in the X direction or the Y direction in a plan view. In the illustrated example, the semiconductor light-emitting device 10 has a rectangular shape with the longitudinal direction in the X direction. Furthermore, the first edge light-emitting element 14 may be provided at a position offset from the center in the X direction. In the illustrated example, the first edge light-emitting element 14 is located closer to the second substrate side surface 12X2 of the substrate 12 in the X direction. In other words, the distance between the first front light-emitting surface FS1 of the first edge light-emitting element 14 and the first reflecting surface 30X2 of the first reflector 30 is greater than the distance between the first rear light-emitting surface BS1 and the second reflecting surface 32X2 of the second reflector 32.

[0277] The distance between each side surface of the first edge light emitting element 14 and the reflective surface facing that side surface can be changed as desired. The shape of the semiconductor light emitting device 10 and the position of the first edge light emitting element 14 can be set so that the radiation pattern characteristics of the semiconductor light emitting device 10 are desired. In addition, by adjusting the position of each reflector, the angle of the reflective surface, the reflectivity of the reflective surface, the configuration of the sealing member 40, etc., the radiation pattern characteristics of the semiconductor light emitting device 10 can be made closer to the desired characteristics.

[0278] As shown in Fig. 27, the first angle θ1 and the second angle θ2 may be different. In the illustrated example, the second reflecting surface 32X2 is inclined at the second angle θ2 with respect to the substrate surface 12A, and the second angle θ2 in Fig. 27 is larger than the second angle θ2 in Fig. 3. As a result, the light emitted from the first rear light-emitting surface BS1 is more likely to be emitted toward the center of the semiconductor light-emitting device 10 in the X direction than in the example of Fig. 3. The first to fourth angles θ1 to θ4 can be adjusted according to the desired radiation pattern characteristics.

[0279] 28 , the first reflector 30 and the second reflector 32 may include a reflective film 702 that constitutes each of the reflective surfaces 30X2, 32X2. That is, the first reflector 30 may include a wall member 706 having an inclined surface 704 facing the first edge-light emitting element 14, and a reflective film 702 provided on the inclined surface 704. The inclined surface 704 of the first reflector 30 may be inclined at a first angle θ1 with respect to the substrate surface 12A. Similarly, the second reflector 32 may include a wall member 706 having an inclined surface 704 facing the first edge-light emitting element 14, and a reflective film 702 provided on the inclined surface 704. The inclined surface 704 of the second reflector 32 may be inclined at a second angle θ2 with respect to the substrate surface 12A. Although not shown, the third reflector 34 and the fourth reflector 36 may include a reflective film 702 that forms each of the reflective surfaces 34Y2 and 36Y2.

[0280] The reflective film 702 can be made of, for example, a material with high reflectivity. In one example, the reflective film 702 may be a metal. The reflective film 702 may be made of, for example, Cu, Al, Au, or an alloy containing these. In another example, the reflective film 702 may be made of a white resin. The wall member 706 may be made of, for example, a white resin, AlN, Al ２ O ３ , etc.

[0281] The reflective film 702 may cover the entire slope 704 of the wall member 706. The reflective film 702 may cover a portion of the slope 704 of the wall member 706. A portion of the slope 704 of each wall member 706 may be exposed from the reflective film 702. The reflective film 702 may be included in any one or all of the first to fourth reflectors 30, 32, 34, and 36.

[0282] The reflective film 702 reflects the light emitted from the first edge-emitting element 14. Therefore, the material of the wall member 706 may or may not have a high reflectivity. The wall member 706 may be made of a light-transmitting material.

[0283] 29 , each of the reflectors 30, 32, 34, and 36 may be made of a material containing metal. For example, each of the reflectors 30, 32, 34, and 36 may be made of a material containing Cu, Al, an alloy thereof, or the like. The reflectors made of a metal material are arranged so as not to come into contact with the surface electrode 20. In other words, the surface electrode 20 is arranged so as not to come into contact with the reflectors made of a metal material.

[0284] 30 and 31, the number, shape, and arrangement of the surface electrodes 20 can be changed depending on the edge light emitting elements included in the semiconductor light emitting device and the desired wiring pattern. For example, as shown in FIG. 30, the first surface electrode 20A may be located closer to the third substrate side surface 12Y1 of the substrate 12. The first surface electrode 20A may not include a protrusion 20A2 and may be composed only of a strip portion 20A1. The second surface electrode 20B may be located closer to the fourth substrate side surface 12Y2 of the substrate 12. The second surface electrode 20B may not include a protrusion 20B2 and may be composed only of a main portion 20B1.

[0285] In the example shown in FIG. 31 , the semiconductor light-emitting device 10 includes a second edge light-emitting element 114. The surface electrode 20 includes a first surface electrode 20A, a second surface electrode 20B, and a third surface electrode 20C. The first surface electrode 20A is connected to the element surface electrode 16A of the first edge light-emitting element 14 by a first wire W1. The first edge light-emitting element 14 and the second edge light-emitting element 114 are mounted to the second surface electrode 20B via a submount substrate 26. The third surface electrode 20C is connected to the element surface electrode 116A of the second edge light-emitting element 114 by a second wire W2. The first surface electrode 20A, the second surface electrode 20B, and the third surface electrode 20C are spaced apart. The first surface electrode 20A and the third surface electrode 20C may be electrically connected. For example, the first surface electrode 20A and the second surface electrode 20B may be connected to the same back surface electrode.

[0286] 32 to 34, the semiconductor light emitting device 10 does not have to include the submount substrate 26. As shown in Figures 32 and 34, the first edge light emitting element 14 may be mounted on the front surface electrode 20 without the submount substrate 26. In particular, the back surface electrode 16B of the first edge light emitting element 14 may be connected to the first front surface electrode 20A via a conductive bonding material SD.

[0287] The semiconductor light-emitting device 10 may not include the third reflector 34 and the fourth reflector 36. The sealing member 40 may be exposed on the Y-direction side surface of the semiconductor light-emitting device 10. The first to fourth reflectors 30, 32, 34, and 36 of the semiconductor light-emitting device 10 may be connected to form a circular shape in a planar view. For example, the semiconductor light-emitting device may include a circular reflector instead of the first to fourth reflectors 30, 32, 34, and 36. The reflector may also include outer wall surfaces 30X1, 32X1, 34Y1, and 36Y1 shown in FIGS. 4 and 5 and an inclined inner wall surface that is circular in a planar view. The inner wall of the circular reflector may be made of a material with high reflectivity. In a planar view, the first edge light-emitting element 14 may be provided inside the circular reflector. In plan view, the first edge light emitting element 14 may be surrounded by the inner wall of a circular reflector.

[0288] The first edge-emitting element 14 may be configured to be mounted on the submount substrate 26 in a junction-down manner. That is, the front surface electrode 16A of the first edge-emitting element 14 may serve as the cathode electrode, and the back surface electrode 16B may serve as the anode electrode. An edge-emitting laser element has an active layer 50 located closer to the anode electrode than the cathode electrode. Therefore, by using an edge-emitting element configured such that the back surface electrode 16B serves as the anode electrode, the heat dissipation of the semiconductor light-emitting device 10 can be further improved.

[0289] The semiconductor light emitting device 10 may include light emitting elements such as an edge light emitting element, an LED element, a VCSEL, etc. in addition to the first edge light emitting element 14. The semiconductor light emitting device 10 may include a third light emitting element in addition to the first edge light emitting element 14 and the second edge light emitting element 114. The third light emitting element may be an edge light emitting element, an LED element, a VCSEL, etc. The semiconductor light emitting device 10 may include four or more light emitting elements.

[0290] The connection between the element front surface electrode 16A and the element back surface electrode 16B and the surface electrode 20 can be changed as desired. For example, the element back surface electrode 16B may be connected to the first surface electrode 20A via the submount surface 26A. In this case, the element front surface electrode 16A may be connected to the second surface electrode 20B by a wire.

[0291] In the semiconductor device 10 of the second embodiment, a submount substrate 26 may be provided for each of the first edge light emitting element 14 and the second edge light emitting element 114. In other words, the first edge light emitting element 14 and the second edge light emitting element 114 may be mounted on the second surface electrode 20B by different submount substrates 26. The thickness of the submount substrate 26 on which the first edge light emitting element 14 is mounted may be different from the thickness of the submount substrate 26 on which the second edge light emitting element 114 is mounted.

[0292] One or more of the various embodiments and modifications described in this specification can be combined to the extent that they are not technically inconsistent. The term "on" as used in this disclosure includes the meanings of "on" and "above," unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" means that in some embodiments, the first element may be disposed directly on the second element in contact with the second element, but in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0293] The Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" in the Z axis direction described in this disclosure being "up" and "down" in the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0294] [Notes] The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the notes are given the reference symbols of the corresponding components in the embodiments. The reference symbols are shown as examples to aid understanding, and the components described in each note should not be limited to the components indicated by the reference symbols.

[0295] [Supplementary Note 1] A light emitting device comprising: a substrate (12) including a substrate surface (12A); a first edge light emitting element (14) located on the substrate (12) and including a first front light emitting surface (FS1) and a first rear light emitting surface (BS1) which are both end surfaces in a first direction (X) intersecting a thickness direction (Z) perpendicular to the substrate surface (12A), and configured so that light is emitted from the first front light emitting surface (FS1) and the first rear light emitting surface (BS1); a first reflector (30) having a first reflection surface (30X2) facing the first front light emitting surface (FS1); and a second reflector (32) having a second reflection surface (32X2) facing the first rear light emitting surface (BS1), the first reflector (30) extends in a direction intersecting the substrate surface (12A) so as to reflect light emitted from the first front light-emitting surface (FS1) upward toward the second reflecting surface (32X2); and the second reflector (32) extends in a direction intersecting the substrate surface (12A) so as to reflect light emitted from the first rear light-emitting surface (BS1) upward toward the first reflecting surface (30X2).

[0296] [Supplementary Note 2] The semiconductor light-emitting device (10) according to Supplementary Note 1, further comprising: a light-transmitting sealing member (40) provided within a region surrounded by the first reflector (30) and the second reflector (32), and sealing the first edge-emitting element (14).

[0297] [Supplementary Note 3] The light emitting device includes a substrate (12) including a substrate surface (12A), a first edge light emitting element (14) located on the substrate (12) and including a first front light emitting surface (FS1) and a first rear light emitting surface (BS1) which are both end surfaces in a first direction (X) intersecting a thickness direction (Z) perpendicular to the substrate surface (12A), and configured to emit light from both the first front light emitting surface (FS1) and the first rear light emitting surface (BS1), a first reflector (30) having a first reflection surface (30X2) facing the first front light emitting surface (FS1), a second reflector (32) having a second reflection surface (32X2) facing the first rear light emitting surface (BS1), and a translucent sealing member (40) provided in an area surrounded by the first reflector (30) and the second reflector (32) and sealing the first edge light emitting element (14). A semiconductor light emitting device (10).

[0298] [Supplementary Note 4] The semiconductor light-emitting device (10) described in Supplementary Note 3, wherein the first reflector (30) extends in a direction intersecting with the substrate surface (12A) so as to reflect light emitted from the first front light-emitting surface (FS1) upward toward the second reflecting surface (32X2), and the second reflector (32) extends in a direction intersecting with the substrate surface (12A) so as to reflect light emitted from the first rear light-emitting surface (BS1) upward toward the first reflecting surface (30X2).

[0299] [Supplementary Note 5] The semiconductor light-emitting device (10) according to any one of Supplementary Notes 2 to 4, wherein the sealing member (301) includes a diffusing material (304) that diffuses light.

[0300] [Supplementary Note 6] The semiconductor light-emitting device (10) according to Supplementary Note 5, wherein the sealing member (301) includes: a transmission region (302) that transmits light emitted from the first edge-emitting element (14); and a diffusion region (306) that includes the diffusion material (304).

[0301] [Supplementary Note 7] The semiconductor light-emitting device (10) according to Supplementary Note 6, wherein the diffusion region (306) is provided at least in a surface layer portion of the sealing member (301).

[0302] [Supplementary Note 8] The semiconductor light-emitting device (10) according to Supplementary Note 6, wherein the first edge-emitting element (14), including the first front light-emitting surface (FS1) and the first rear light-emitting surface (BS1), is covered by the transmission region (302), and the diffusion region (306) surrounds the transmission region (302).

[0303] [Supplementary Note 9] The semiconductor light emitting device (10) according to Supplementary Note 6, wherein the material constituting the transmissive region (302) is softer than the material constituting the diffusive region (306).

[0304] [Supplementary Note 10] The semiconductor light-emitting device (10) according to Supplementary Note 6, further comprising a conductive surface electrode (20) positioned on the substrate (12), wherein the transmissive region (302) covers at least a portion of the substrate surface (12A) and covers the first edge-emitting element (14).

[0305] [Supplementary Note 11] The sealing member (501) includes: a sealing upper surface (501A) that is an upper surface in the thickness direction (Z); and a first groove portion (502A) and a second groove portion (502B) extending from the sealing upper surface (501A) toward the substrate (12), wherein the first groove portion (502A) includes: a first opposing side wall (506A) facing the first front light-emitting surface (FS1); and a first inclined side wall (508A) that is provided at a position farther from the first front light-emitting surface (FS1) than the first opposing side wall (506A) and is inclined with respect to the thickness direction (Z), and the second groove portion (502B) includes: a second opposing side wall (506B) facing the first rear light-emitting surface (BS1), and a second inclined sidewall (508B) that is provided at a position farther from the first rear light-emitting surface (BS1) than the second opposing sidewall (506B) and is inclined with respect to the thickness direction (Z).

[0306] [Supplementary Note 12] The semiconductor light-emitting device (10) according to Supplementary Note 11, wherein a diffusion sealing member (510) including a diffusing material that diffuses light is embedded in the first groove portion (502A) and the second groove portion (502B).

[0307] [Appendix 13] The semiconductor light-emitting device (10) according to any one of Appendices 2 to 12, wherein the sealing member (601) includes: a base body (602) that transmits light emitted from the first front light-emitting surface (FS1) and the first rear light-emitting surface (BS1); and a reflector (604) made of a material having a higher reflectivity than the base body (602), and the reflector (604) is located between the substrate (12) and the base body (602) in the thickness direction (Z).

[0308] [Supplementary Note 14] The first reflector (30) and the second reflector (32) each include a reflector upper surface (30A, 32A) as an end surface opposite to the substrate (12) in the thickness direction (Z), the reflector (604) covers the first reflecting surface (30X2) and the second reflecting surface (32X2), a surface (606) of the reflector (604) is concave and curved toward the reflector upper surface (30A, 32A) as it moves from the first edge-emitting element (14) toward the first reflector (30) and the second reflector (32), and the surface (606) of the reflector (604) is interposed between the first front light-emitting surface (FS1) and the first reflecting surface (30X2) and is also interposed between the first rear light-emitting surface (BS1) and the second reflecting surface (32X2). 14. The semiconductor light emitting device (10) of claim 13.

[0309] [Appendix 15] The semiconductor light-emitting device (10) according to any one of Appendices 2 to 14, wherein the sealing member (40) is made of a material that blocks visible light, and the first edge-emitting element (14) is configured to emit light having a wavelength different from the visible light.

[0310] [Appendix 16] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 15, wherein the first reflector (30) extends in a direction intersecting with the substrate surface (12A) so as to reflect light emitted from the first front light-emitting surface (FS1) in a first reflection direction in the first direction (X) toward the first end-face light-emitting element (14) and upward, and the second reflector (32) extends in a direction intersecting with the substrate surface (12A) so as to reflect light emitted from the first rear light-emitting surface (BS1) in a second reflection direction in the first direction (X) toward the first end-face light-emitting element (14) and upward.

[0311] [Appendix 17] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 16, wherein the first reflecting surface (30X2) is inclined at a first angle (θ1) with respect to the substrate surface (12A), the second reflecting surface (32X2) is inclined at a second angle (θ2) with respect to the substrate surface (12A), and the first angle (θ1) and the second angle (θ2) are equal to each other.

[0312] [Appendix 18] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 16, wherein the first reflecting surface (30X2) is inclined at a first angle (θ1) with respect to the substrate surface (12A), the second reflecting surface (32X2) is inclined at a second angle (θ2) with respect to the substrate surface (12A), and the first angle (θ1) and the second angle (θ2) are different from each other.

[0313] [Appendix 19] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 18, wherein the first reflecting surface (30X2) is inclined at a first angle (θ1) with respect to the substrate surface (12A), the second reflecting surface (32X2) is inclined at a second angle (θ2) with respect to the substrate surface (12A), the first angle (θ1) is equal to or greater than 90° and less than 120°, and the second angle (θ2) is equal to or greater than 90° and less than 120°.

[0314] [Supplementary Note 20] The semiconductor light-emitting device (10) according to any one of Supplementary Notes 1 to 19, wherein the reflectance of the first reflecting surface (30X2) and the reflectance of the second reflecting surface (32X2) are different from each other.

[0315] [Appendix 21] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 20, wherein the intensity of the first front emitted light (L1F) emitted from the first front light-emitting surface (FS1) is greater than the intensity of the first rear emitted light (L1B) emitted from the first rear light-emitting surface (BS1), and the reflectance of the second reflecting surface (32X2) is greater than the reflectance of the first reflecting surface (30X2).

[0316] [Supplementary Note 22] The semiconductor light-emitting device (10) according to any one of Supplementary Notes 1 to 21, wherein the first reflector (30) includes a wall member (706) including an inclined surface (704) facing the first front light-emitting surface (FS1), and a reflective film (702) provided on the inclined surface (704) and constituting the first reflective surface (30X2), and the second reflector (32) includes a wall member (706) including an inclined surface (704) facing the first rear light-emitting surface (BS1), and a reflective film (702) provided on the inclined surface (704) and constituting the second reflective surface (32X2).

[0317] [Appendix 23] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 22, wherein a distance between the first front light-emitting surface (FS1) and the first reflecting surface (30X2) in the first direction (X) is different from a distance between the first rear light-emitting surface (BS1) and the second reflecting surface (32X2) in the first direction (X).

[0318] [Supplementary Note 24] The semiconductor light-emitting device (10) according to any one of Supplementary Notes 1 to 23, wherein an intensity of the first front emitted light (L1F) emitted from the first front light-emitting surface (FS1) is greater than an intensity of the first rear emitted light (L1B) emitted from the first rear light-emitting surface (BS1), and a distance between the first rear light-emitting surface (BS1) and the second reflecting surface (32X2) in the first direction (X) is smaller than a distance between the first front light-emitting surface (FS1) and the first reflecting surface (30X2) in the first direction (X).

[0319] [Supplementary Note 25] The semiconductor light-emitting device (10) according to any one of Supplementary Notes 1 to 24, further comprising a third reflector (34) and a fourth reflector (36) provided on both sides of the first edge-emitting element (14) in a second direction (Y) intersecting the first direction (X), and the reflectors are connected to each other to form a ring shape.

[0320] [Supplementary Note 26] The semiconductor light emitting device (10) according to any one of Supplementary Notes 1 to 25, wherein the reflectors are connected to each other and have a circular shape.

[0321] [Supplementary Note 27] The semiconductor light-emitting device (10) according to Supplementary Note 25, wherein the first reflecting surface (30X2) is inclined at a first angle (θ1) with respect to the substrate surface (12A), the second reflecting surface (32X2) is inclined at a second angle (θ2) with respect to the substrate surface (12A), and the third reflector (34) includes a third reflecting surface (34Y2) inclined at a third angle with respect to the substrate surface (12A), and the third angle is different from at least one of the first angle (θ1) and the second angle (θ2).

[0322] [Appendix 28] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 20, wherein the first edge-emitting element (14) is configured to emit light of the same intensity from the first front light-emitting surface (FS1) and the first rear light-emitting surface (BS1).

[0323] [Appendix 29] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 27, further comprising a second edge-emitting element (114) provided on the substrate (12) separately from the first edge-emitting element (14), wherein the second edge-emitting element (114) comprises a second front-emitting surface (FS2) and a second rear-emitting surface (BS2) which are both end surfaces in a first direction (X), and wherein light is emitted from the second front-emitting surface (FS2) and the second rear-emitting surface (BS2), and the first edge-emitting element (14) and the second edge-emitting element (114) are arranged at a distance from each other in a second direction (Y) which intersects both the thickness direction (Z) and the first direction (X).

[0324] [Supplementary Note 30] The semiconductor light-emitting device (10) according to Supplementary Note 29, wherein the second edge-emitting element (114) has the same light-emitting characteristics as the first edge-emitting element (14).

[0325] [Supplementary Note 31] The semiconductor light-emitting device (10) according to Supplementary Note 29, wherein the second edge-emitting element (114) has light-emitting characteristics different from those of the first edge-emitting element (14).

[0326] [Supplementary Note 32] The semiconductor light-emitting device (10) according to Supplementary Note 29, wherein the intensity of the first front-emitting light (L1F) emitted from the first front-emitting surface (FS1) is greater than the intensity of the first rear-emitting light (L1B) emitted from the first rear-emitting surface (BS1), the intensity of the second front-emitting light (L2F) emitted from the second front-emitting surface (FS2) is greater than the intensity of the second rear-emitting light (L2B) emitted from the second rear-emitting surface (BS2), and the second edge-emitting element (114) is arranged such that the second front-emitting surface (FS2) faces the second reflecting surface (32X2) and the second rear-emitting surface (BS2) faces the first reflecting surface (30X2).

[0327] [Appendix 33] The semiconductor light-emitting device (10) according to any one of Appendices 1 to 32, further comprising a submount substrate (26) located between the substrate (12) and the first edge-emitting element (14) in the thickness direction (Z) and connected to the first edge-emitting element (14).

[0328] [Supplementary Note 34] The semiconductor light-emitting device (10) according to Supplementary Note 33, wherein the submount substrate (26) is made of a conductive material.

[0329] [Supplementary Note 35] The semiconductor light-emitting device (10) according to Supplementary Note 33, wherein the submount substrate (26) is made of an insulating material and includes through-hole wiring that penetrates the submount substrate (26) in the thickness direction (Z).

[0330] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims.

[0331] REFERENCE SIGNS LIST 10...semiconductor light emitting device, 12...substrate, 12A...substrate surface, 12B...substrate back surface, 12X1, 12X2, 12Y1, 12Y2...first to fourth substrate side surfaces, 14...first edge light emitting element, 14A...element surface, 14B...element back surface, 14X1, 14X2, 14Y1, 14Y2...first to fourth element side surfaces, 16A...element surface electrode, 16B...element back surface electrode, 20...surface electrode, 20A...first surface electrode, 20B...second surface electrode, 20C...third surface electrode, 20A1...band portion, 20A2...protrusion, 20B1...main portion, 20B2...convex portion, 22...back surface electrode Electrode, 22A...first rear surface electrode, 22B...second rear surface electrode, 24...connection portion, 24A...first connection portion, 24B...second connection portion, 26...submount substrate, 26A...submount surface, 26B...submount rear surface, 26X1, 26X2, 26Y1, 26Y2...first to fourth submount side surfaces, 30, 32, 34, 36...first to fourth reflectors, 30A, 32A, 34A, 36A...first to fourth reflector upper surfaces, 30B, 32B, 34B, 36B...first to fourth reflector lower surfaces, 30X1, 32X1, 32Y1, 36Y1,...first to fourth outer wall surface, 30X2, 32X2, 34Y2, 36Y2...first to fourth reflecting surfaces, 40, 301, 501, 601...sealing member, 40A, 501A, 601A...sealing upper surface, 50...active layer, 52...n-side guide layer, 54...p-side guide layer, 56...n-type semiconductor layer, 58...p-type semiconductor layer, 60...dielectric multilayer film, 114...second edge-emitting element, 114A...element front surface, 114B...element back surface, 114X1, 114X2, 114Y1, 114Y2...first to fourth element side surfaces, 116A...element front surface electrode, 116B...element back surface electrode, 302... Transmissive region, 304...diffusion material, 306...diffusion region, 402...transmissive upper surface, 404...connection portion, 406...via, 408...through electrode, 502A, 502B...first groove portion, second groove portion, 504A, 504B...first bottom wall, second bottom wall, 506A, 506B...first opposing side wall, second opposing side wall, 508A, 508B...first inclined side wall, second inclined side wall, 510...diffusion sealing member, 602...base body, 602A...base upper surface, 604...reflector, 606...surface, 606A, 606B...first end, second end, 608A, 608B...first end face through hole,Second end surface through hole, 610...first end surface, 612...second end surface, 702...reflective film, 704...inclined surface, 706...wall member, FS1...first front light emitting surface, BS1...first rear light emitting surface, FS2...second front light emitting surface, BS2...second rear light emitting surface, L1F...first front emitted light, L1B...first rear emitted light, L2F...second front emitted light, L2B...second rear emitted light, W1, W2...first and second wires, SD1 to SD4, SD...conductive bonding material, θ1 to θ6...first to sixth angles, D, Ｌ , D Ｖ ...FFP data of the semiconductor light emitting device of the comparative example, D ＥＸ , D ＥＹ ...FFP data of the semiconductor light emitting device 10, θ Ｌ , θ Ｖ ...spread angle of the semiconductor light emitting device of the comparative example, θ ＥＸ ...spread angle of the semiconductor light emitting device 10, θp1, θp2...peak angles of the FFP data of the semiconductor light emitting device 10.

Claims

1. A semiconductor light emitting device comprising: a substrate including a substrate surface; a first edge light emitting element located on the substrate and including a first front light emitting surface and a first rear light emitting surface which are both end surfaces in a first direction intersecting a thickness direction perpendicular to the substrate surface, the first edge light emitting element being configured to emit light from both the first front light emitting surface and the first rear light emitting surface; a first reflector having a first reflective surface facing the first front light emitting surface; a second reflector having a second reflective surface facing the first rear light emitting surface; and a translucent sealing member provided within an area surrounded by the first reflector and the second reflector and sealing the first edge light emitting element.

2. The semiconductor light emitting device according to claim 1, wherein the sealing member includes a diffusing material that diffuses light.

3. The semiconductor light-emitting device described in claim 1, wherein the first reflector extends in a direction intersecting the substrate surface so as to reflect light emitted from the first front light-emitting surface upward toward the second reflecting surface, and the second reflector extends in a direction intersecting the substrate surface so as to reflect light emitted from the first rear light-emitting surface upward toward the first reflecting surface.

4. A semiconductor light emitting device according to any one of claims 1 to 3, wherein the first reflecting surface is inclined at a first angle relative to the substrate surface, the second reflecting surface is inclined at a second angle relative to the substrate surface, the first angle being equal to or greater than 90° and less than 120°, and the second angle being equal to or greater than 90° and less than 120°.

5. A semiconductor light emitting device according to any one of claims 1 to 4, further comprising a third reflector and a fourth reflector provided on both sides of the first edge light emitting element in a second direction intersecting the first direction, and the reflectors are connected to each other to form a ring.

6. A semiconductor light-emitting device according to any one of claims 1 to 4, wherein the first edge-emitting element is configured to emit light of the same intensity from the first front light-emitting surface and the first rear light-emitting surface.

7. A semiconductor light emitting device according to any one of claims 1 to 5, further comprising a second edge light emitting element provided on the substrate separately from the first edge light emitting element, the second edge light emitting element including a second front light emitting surface and a second rear light emitting surface which are both end surfaces in the first direction, and configured so that light is emitted from the second front light emitting surface and the second rear light emitting surface, and the first edge light emitting element and the second edge light emitting element are arranged at a distance in a second direction which intersects both the thickness direction and the first direction.

8. A semiconductor light-emitting device as described in claim 7, wherein the intensity of the first front-emitting light emitted from the first front-emitting surface is greater than the intensity of the first rear-emitting light emitted from the first rear-emitting surface, the intensity of the second front-emitting light emitted from the second front-emitting surface is greater than the intensity of the second rear-emitting light emitted from the second rear-emitting surface, and the second edge-emitting element is arranged so that the second front-emitting surface faces the second reflecting surface and the second rear-emitting surface faces the first reflecting surface.

9. The semiconductor light emitting device according to claim 2, wherein the sealing member includes a transmission region that transmits light emitted by the first edge light emitting element, and a diffusion region that includes the diffusion material.

10. The semiconductor light-emitting device according to claim 9, wherein the first edge-emitting element, including the first front light-emitting surface and the first rear light-emitting surface, is covered by the transmissive region, and the diffusion region surrounds the transmissive region.

11. The semiconductor light emitting device according to claim 9, wherein the material constituting the transmission region is softer than the material constituting the diffusion region.

12. The semiconductor light emitting device according to claim 9, further comprising a conductive surface electrode located on the substrate, the transmissive region covering at least a portion of the surface electrode and covering the first edge-emitting element.

13. A semiconductor light emitting device as described in any one of claims 1 to 3 and 9 to 12, wherein the sealing member includes: a sealing upper surface that is the upper surface in the thickness direction; and a first groove portion and a second groove portion extending from the sealing upper surface toward the substrate; the first groove portion includes: a first opposing side wall facing the first front light emitting surface; and a first inclined side wall that is inclined with respect to the thickness direction and is located farther from the first front light emitting surface than the first opposing side wall; and the second groove portion includes: a second opposing side wall facing the first rear light emitting surface; and a second inclined side wall that is inclined with respect to the thickness direction and is located farther from the first rear light emitting surface than the second opposing side wall.

14. The semiconductor light emitting device according to claim 13, wherein a diffusion sealing member containing a diffusing material for diffusing light is embedded in the first groove portion and the second groove portion.

15. A semiconductor light-emitting device as described in any one of claims 1 to 3 and 9 to 14, wherein the sealing member includes a base body that transmits light emitted from the first front light-emitting surface and the first rear light-emitting surface, and a reflector made of a material having a higher reflectivity than the base body, and the reflector is located between the substrate and the base body in the thickness direction.

16. The semiconductor light-emitting device of claim 15, wherein the first reflector and the second reflector each include a reflector top surface as an end surface opposite to the substrate in the thickness direction, the reflector covers the first reflecting surface and the second reflecting surface, the surface of the reflector is concave and curved toward the reflector top surface as it moves from the first end-face light-emitting element toward the first reflector and the second reflector, and the surface of the reflector is interposed between the first front light-emitting surface and the first reflecting surface, and is also interposed between the first rear light-emitting surface and the second reflecting surface.

17. The semiconductor light-emitting device according to any one of claims 1 to 16, further comprising a submount substrate located between the substrate and the first edge-emitting element in the thickness direction and connected to the first edge-emitting element.

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