Substrate processing system

Abstract

This substrate processing system comprises: a vacuum transfer chamber; a substrate inversion chamber connected to the vacuum transfer chamber and configured to be a vacuum inside, the substrate inversion chamber including a substrate inversion unit and a substrate transfer unit, the substrate inversion unit being configured to hold a substrate from the vacuum transfer chamber at a first height and invert the substrate while holding the substrate, and the substrate transfer unit being configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transfer the substrate to a third height different from the first height and the second height; and a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

Description

Substrate Processing System

[0001] Exemplary embodiments of the present disclosure relate to a substrate processing system.

[0002] Patent Document 1 discloses a technology related to a semiconductor wafer manufacturing apparatus that can be used to perform all deposition and processing steps on a semiconductor wafer in place.

[0003] Japanese Patent Translation Publication No. 2012-531059

[0004] The present disclosure provides a technology to increase the degree of freedom in device layout.

[0005] In one exemplary embodiment of the present disclosure, there is provided a substrate processing system including a vacuum transfer chamber, a substrate inversion chamber connected to the vacuum transfer chamber and configured to be evacuated inside, the substrate inversion chamber including a substrate inversion unit and a substrate transfer unit, the substrate inversion unit configured to hold a substrate from the vacuum transfer chamber at a first height and invert the substrate while holding it, the substrate transfer unit configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transfer the substrate to a third height different from the first height and the second height, a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

[0006] According to one exemplary embodiment of the present disclosure, a technology to increase the degree of freedom in device layout can be provided.

[0007] This is a diagram illustrating an example configuration of a substrate processing system. This is a diagram illustrating an example configuration of the vacuum transfer chamber VT, the substrate inversion chamber VR, and the substrate processing chamber PM30. This is a diagram illustrating an example of the transport operation of the substrate processing system PS. This is a diagram illustrating an example of the transport operation of the substrate processing system PS. This is a diagram illustrating an example of the transport operation of the substrate processing system PS. This is a diagram illustrating an example of the transport operation of the substrate processing system PS. This is a diagram illustrating an example of the transport operation of the substrate processing system PS. This is a diagram illustrating an example of the transport operation of the substrate processing system PS.

[0008] The embodiments of this disclosure are described below.

[0009] In one exemplary embodiment, a substrate processing system is provided comprising: a vacuum transport chamber; a substrate inversion chamber connected to the vacuum transport chamber and configured to be a vacuum inside, wherein the substrate inversion chamber comprises a substrate inversion unit and a substrate transport unit, the substrate inversion unit being configured to hold a substrate from the vacuum transport chamber at a first height and invert the substrate while holding it, and the substrate transport unit being configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transport the substrate to a third height different from the first and second heights; and a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

[0010] In one exemplary embodiment, the third height is greater than the first and second heights.

[0011] In one exemplary embodiment, the substrate inversion unit is configured to hold the substrate at the first height with the processing surface facing upward, and then invert it so that the processing surface faces downward.

[0012] In one exemplary embodiment, the substrate transport unit is configured to transport the substrate to the third height with the processing surface facing downwards.

[0013] In one exemplary embodiment, the substrate processing chamber is configured to perform processing on the substrate with the processing surface facing downwards.

[0014] In one exemplary embodiment, the processing of the substrate in the substrate processing chamber is a vapor deposition process with the processing surface facing downwards.

[0015] In one exemplary embodiment, the system further includes a second substrate processing chamber connected to the vacuum transfer chamber, wherein the second substrate processing chamber is configured to perform processing on the substrate with the processing surface facing upward.

[0016] In one exemplary embodiment, the processing of the substrate in the second substrate processing chamber is a cleaning process with the processing surface facing upwards.

[0017] In one exemplary embodiment, the substrate inversion chamber is provided with a first transport port at a position corresponding to the first height and a second transport port at a position corresponding to the third height.

[0018] In one exemplary embodiment, the height of the upper surface of the substrate inversion chamber is higher than the height of the upper surface of the vacuum transfer chamber.

[0019] In one exemplary embodiment, a substrate inversion chamber is provided, configured to be a vacuum inside, the substrate inversion chamber comprising a substrate inversion unit and a substrate transport unit, wherein the substrate inversion unit is configured to hold a substrate at a first height and invert the substrate while holding it, and the substrate transport unit is configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transport the substrate to a third height different from the first and second heights; and a substrate processing chamber is provided, connected to the substrate inversion chamber and configured to receive the substrate at the third height.

[0020] In one exemplary embodiment, the third height is greater than the first and second heights.

[0021] In one exemplary embodiment, the substrate inversion unit is configured to hold the substrate at the first height with the processing surface facing upward, and then invert it so that the processing surface faces downward.

[0022] In one exemplary embodiment, the substrate transport unit is configured to transport the substrate to the third height with the processing surface facing downwards.

[0023] In one exemplary embodiment, the substrate processing chamber is configured to perform processing on the substrate with the processing surface facing downwards.

[0024] In one exemplary embodiment, the processing of the substrate in the substrate processing chamber is a vapor deposition process with the processing surface facing downwards.

[0025] Hereinafter, each embodiment of this disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numeral, and redundant explanations are omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and actual ratios are not limited to those shown.

[0026] <Example of a Substrate Processing System> Figure 1 is a diagram illustrating an example of the configuration of a substrate processing system. Figure 1 shows an example of the arrangement of the substrate processing system PS in a plan view, where the direction perpendicular to the plane of the paper (z direction) is the height direction. The substrate processing system PS includes substrate processing chambers PM10 to PM50 (hereinafter collectively referred to as "substrate processing chamber PMc"), a vacuum transfer chamber VT, a substrate inversion chamber VR, load lock modules LLM1 and LLM2 (hereinafter collectively referred to as "load lock module LLM"), a loader module LM, and load ports LP1 to LP3 (hereinafter collectively referred to as "load port LP"). The control unit CT controls each component of the substrate processing system PS to execute a given processing on the substrate W.

[0027] The substrate processing chamber PMc performs processes on the substrate W, such as etching, trimming, film deposition, annealing, doping, lithography, cleaning, and ashing, within its interior. For example, film deposition includes vapor deposition. In one embodiment, a part of the substrate processing chamber PMc may include a measuring device, which may measure, for example, the film thickness of a film formed on the substrate W or the dimensions of a pattern formed on the substrate W using an optical method.

[0028] The vacuum transport chamber VT and the substrate inversion chamber VR have transport devices for transporting substrates W, and transport substrates W between substrate processing chambers PMc or between substrate processing chambers PMc and load lock module LLM. The vacuum transport chamber VT is located connected to the load lock module LLM and is configured to be a vacuum inside. The substrate inversion chamber VR is located connected to the vacuum transport chamber VT and is configured to be a vacuum inside. In one embodiment, the substrate processing chamber PMc is located adjacent to at least one of the vacuum transport chamber VT and the substrate inversion chamber VR. The vacuum transport chamber VT, the substrate inversion chamber VR, the substrate processing chamber PMc, and the load lock module LLM are each spatially isolated or connected to adjacent components by gate valves that can be opened and closed.

[0029] Load lock modules LLM1 and LLM2 are installed between the vacuum transport chamber VT and the loader module LM. The load lock module LLM can switch the internal pressure between atmospheric pressure and vacuum. "Atmospheric pressure" may be the external pressure of each module included in the substrate processing system PS. "Vacuum" is a pressure lower than atmospheric pressure, for example, a medium vacuum of 0.1 Pa to 100 Pa. The load lock module LLM transports the substrate W from the loader module LM, which is at atmospheric pressure, to the vacuum transport chamber VT, which is in vacuum, and also transports it from the vacuum transport chamber VT, which is in vacuum, back to the loader module LM, which is at atmospheric pressure.

[0030] The loader module LM has a transport device for transporting substrates W, and transports the substrates W between the load lock module LLM and the load port LP. Inside the load port LP, a FOUP (Front Opening Unified Pod) capable of holding, for example, 25 substrates W, or an empty FOUP can be placed. The loader module LM takes the substrates W from the FOUP inside the load port LP and transports them to the load lock module LLM. Conversely, the loader module LM takes the substrates W from the load lock module LLM and transports them to the FOUP inside the load port LP.

[0031] The control unit CT controls each component of the substrate processing system PS to execute a given process on the substrate W. The control unit CT stores a recipe that sets the process procedure, process conditions, transport conditions, etc., and controls each component of the substrate processing system PS to execute a given process on the substrate W according to the recipe.

[0032] Figure 2 is a diagram illustrating an example configuration of a vacuum transfer chamber VT, a substrate inversion chamber VR, and a substrate processing chamber PM30. In the example in Figure 2, the substrate inversion chamber VR has a first transport port P1 and a second transport port P2, and is connected to the vacuum transfer chamber VT and the substrate processing chamber PM30, respectively, via gate valves G1 and G2. The height of the second transport port P2 is higher than the height of the first transport port P1. The vacuum transfer chamber VT is connected to a load lock module LLM (not shown) via gate valve G3.

[0033] The vacuum transport chamber VT includes a substrate transport section T1. The substrate transport section T1 includes a main body T1a and an arm T1b. The main body T1a may be configured to be movable in the x and y directions of Figure 2. The arm T1b is connected to the main body T1a and may be configured to be rotatable, extendable, and vertically movable. As an example, the arm T1b is configured to be movable in the y direction of Figure 2 and to be able to support a substrate W. The main body T1a is equipped with a motor, and the arm T1b can be moved to the gate valve G1 side (open in the example of Figure 2) or to the main body T1a side by driving the motor. In the example of Figure 2, the vacuum transport chamber VT and the substrate inversion chamber VR are connected at a first transport port P1, and a gate valve G1 configured to be openable and closable is placed at the first transport port P1.

[0034] In the example shown in Figure 2, the substrate inversion chamber VR comprises a substrate inversion section R and a substrate transport section T2. ​​The substrate inversion section R comprises a main body section Ra and a rotation mechanism Rb. The main body section Ra has a substrate holding surface. In one embodiment, the main body section Ra may be equipped with a jig (not shown) for transferring the substrate W between the arms T1b and T2b and the main body section Ra. In one embodiment, the rotation mechanism Rb may be arranged along the horizontal direction of the main body section Ra. The rotation mechanism Rb has a rotation axis in the direction perpendicular to the plane of the paper (x direction) and is configured to invert (rotate, for example, 180°) the main body section Ra around the rotation axis (for example, in the direction of arrow α) by driving, for example, a motor. The main body section Ra may be configured to function as an electrostatic chuck or a mechanical chuck in order to continue holding the substrate W on its holding surface during the inversion. The substrate transport section T2 comprises a main body section T2a and an arm T2b. The main body T2a is configured to be movable vertically in the z direction (height direction) as shown in Figure 2. The main body T2a may also be configured to be movable in the x and y directions. The substrate inversion chamber VR and the substrate processing chamber PM30 are connected by a second transport port P2, and a gate valve G2 configured to be openable and closable is placed in the second transport port P2. When gate valves G1 and G2 are open, the first transport port P1 and the second transport port P2 are configured to allow substrates W held in the substrate transport section T1 and substrates W held in the substrate transport section T2 to pass through, respectively.

[0035] In the example shown in Figure 2, the substrate processing chamber PM30 comprises a substrate support section S, a particle generating section M, and a film-forming material T. The substrate support section S may be configured to hold the substrate W with its processing surface Ws facing downwards. In one embodiment, the substrate W moved into the substrate processing chamber PM30 may be held by the substrate support section S by electrostatic force or mechanically. That is, the substrate support section S may be configured to function as an electrostatic chuck or a mechanical chuck. The substrate processing chamber PM30 may be configured to form a film of the film-forming material T on the processing surface Ws of the substrate W by heating the film-forming material T with the particle generating section M, causing the film-forming material T to melt and vaporize.

[0036] As shown in the example in Figure 2, the heights of the vacuum transfer chamber VT, the substrate inversion chamber VR, and the substrate processing chamber PM30 are height ht, height hr, and height hm, respectively. In one embodiment, ht < hr and ht < hm may be met. In another embodiment, ht < hr < hm may be met.

[0037] In one embodiment, the vacuum transfer chamber VT and the substrate inversion chamber VR may be configured as a single chamber. That is, there may be no partition wall (including the first transfer port P1 and gate valve G1) separating the vacuum transfer chamber VT and the substrate inversion chamber VR, and the two may be provided as a single unit.

[0038] <An Example of Transport Operation in a Substrate Processing System> Below, an example of transport operation in the substrate processing system PS will be explained using Figures 2 to 9. Figures 3 to 9 are diagrams illustrating an example of transport operation in the substrate processing system PS.

[0039] The following describes an example of a transport operation in which a substrate W in the state illustrated in Figure 2 is transported from the vacuum transport chamber VT to the substrate inversion chamber VR via the gate valve G1, and then to the substrate processing chamber PM30 via the gate valve G2. This operation may be performed by the control unit CT controlling each part of the substrate processing system 1.

[0040] In the example in Figure 2, the substrate W is held in the substrate transport unit T1 with the processing surface Ws of the substrate W facing upward (upward in the z direction). For example, the substrate W in Figure 2 may have been transported from the load lock module LLM1 (see Figure 1) into the vacuum transport chamber VT via a gate valve G3 (closed in the example in Figure 2). For example, the substrate W in Figure 2 may have been transported from the substrate processing chamber PM10 or the substrate processing chamber PM50 (see Figure 1) into the vacuum transport chamber VT via a gate valve (not shown). Alternatively, the substrate W in Figure 2 may have been subjected to processing in the substrate processing chamber PM10 or the substrate processing chamber PM50 with the processing surface Ws facing upward. An example of such processing is a cleaning process with the processing surface Ws facing upward. As an example, the substrate W in Figure 2 may have been transported from the substrate processing chamber PM20 or the substrate processing chamber PM40 (see Figure 1) through the substrate inversion chamber VR and then through the gate valve G1 into the vacuum transport chamber VT.

[0041] In Figure 2, when the arm T1b in the substrate transport unit T1 moves in the y-direction toward the substrate inversion chamber VR, it passes through the open gate valve G1 and reaches the inside of the substrate inversion chamber VR. In this way, as shown in Figure 3, the substrate W moves into the adjacent substrate inversion chamber VR along with the movement of the arm T1b. In the example in Figure 3, the arm T1b that holds the substrate W moves so that the substrate W is positioned in a location corresponding to the substrate inversion unit R within the substrate inversion chamber VR.

[0042] Next, as shown in Figure 4, the substrate W is held in the substrate inversion unit R at a first height h1. In one embodiment, the main body Ra of the substrate inversion unit R may be equipped with a substrate gripping jig (not shown). For example, the main body Ra may be configured to lift the substrate W on the arm T1b by raising the substrate gripping jig, then return the arm T1b to the left (towards the main body T1a), and then lower the substrate gripping jig so that the substrate W moves to the holding surface of the main body Ra. The substrate W that has moved to the holding surface may be fixed to the main body Ra by electrostatic force or mechanically. As described above, in the example of Figure 4, the substrate W is held at the first height h1 with the processing surface Ws of the substrate W facing upward. Next, the substrate inversion unit R is rotated 180° in the direction of arrow α by a rotation mechanism Rb located near the center of the main body Ra.

[0043] As a result of the substrate inversion unit R in Figure 4 inverting the substrate W while holding it in place by the drive of the rotation mechanism Rb, the substrate W is inverted so that the processing surface Ws faces downwards, as shown in Figure 5. In one embodiment, the position of the substrate W may remain unchanged in the horizontal direction (x and y directions in Figure 5) before and after inversion by the substrate inversion unit R, and only the position in the height direction (z direction in Figure 5) may change. During or after inversion of the substrate W by the substrate inversion unit R, the arm T2b in the substrate transport unit T2 moves in the y direction toward the substrate processing chamber PM30. In the example in Figure 5, the arm T2b moves to a position corresponding to the substrate W in the substrate inversion chamber VR.

[0044] Next, as shown in FIG. 6, the substrate W is held by the substrate transfer unit T2 at the second height h2. The second height h2 is lower than the first height h1. In the example of FIG. 6, the main body Ra of the substrate inversion unit R may be configured to lower the substrate W on the holding surface of the main body Ra by lowering the above-described jig for gripping the substrate, so that the substrate W is placed on the arm T2b. In the example of FIG. 6, the arm T2b holding the substrate W is positioned on the gate valve G1 side with respect to the main body T2a. From this state, the main body T2a may be controlled so that the arm T2b holding the substrate W is positioned on the gate valve G2 side with respect to the main body T2a. Such control may include, for example, the extension / contraction and / or rotation of the arm T2b and / or the turning of the main body T2a.

[0045] As shown in FIG. 7, the arm T2b holding the substrate W moves to the gate valve G2 side with respect to the main body T2a. From this state, the main body T2a may be controlled so that the arm T2b holding the substrate W rises to the position of the gate valve G2. Such control may include, for example, the extension of the substrate transfer unit T2 in the upward z direction.

[0046] As a result of the extension of the substrate transfer unit T2 in the upward z direction in FIG. 7, as shown in FIG. 8, the substrate W is transferred to the third height h3. In the example of FIG. 8, the substrate W is transferred to the third height h3 with the processing surface Ws facing downward. In this state, the gate valve G2 is opened for the subsequent transfer of the substrate W to the substrate processing chamber PM30. When the arm T2b holding the substrate W moves in the y direction toward the substrate processing chamber PM30 in the state where the gate valve G2 is open, it passes through the gate valve G2 and reaches inside the substrate processing chamber PM30.

[0047] As a result of the arm T2b holding the substrate W in FIG. 8 moving in the y direction toward the substrate processing chamber PM30, as shown in FIG. 9, the substrate W moves to the position of the substrate support portion S. That is, in the example of FIG. 9, the substrate processing chamber PM30 receives the substrate W at a third height h3 that is higher than the first height h1 and the second height h2. In one embodiment, the substrate support portion S may include a jig for gripping the substrate. As an example, after the substrate support portion S lowers the jig for gripping the substrate to grip the substrate W, it then lifts the substrate W on the arm T2b as it is, then returns the arm T2b to the left direction (toward the main body portion T2a), and then raises the jig for gripping the substrate so that the substrate W moves to the holding surface of the substrate support portion S. As described above, in the example of FIG. 9, the substrate W is held by the substrate support portion S with the processing surface Ws of the substrate W facing downward and is subjected to subsequent processing. As an example, the above processing may be a vapor deposition process in a state where the processing surface Ws faces downward. That is, in the substrate processing chamber PM30, the processing surface Ws of the substrate W supported by the substrate support portion S may be subjected to a vapor deposition process. As an example, by heating the film-forming material T by the particle generation portion M, the film-forming material T melts and vaporizes, and a film of the film-forming material T may be formed on the processing surface Ws.

[0048] According to this exemplary embodiment, the substrate processing system includes a vacuum transfer chamber VT, a substrate inversion chamber VR, and a substrate processing chamber PM30. The substrate inversion chamber VR is a substrate inversion chamber that is connected to the vacuum transfer chamber VT and is configured such that the inside is evacuated. The substrate inversion chamber VR includes a substrate inversion portion R and a substrate transfer portion T2. The substrate inversion portion R is configured to hold the substrate W from the vacuum transfer chamber VT at the first height h1 and invert the substrate W while holding it. The substrate transfer portion T2 is configured to receive the substrate W from the substrate inversion portion R at a second height h2 lower than the first height h1 and transfer the substrate W to a third height h3 that is higher than the first height h1 and the second height h2. The substrate processing chamber PM30 is connected to the substrate inversion chamber VR and is configured to receive the substrate W at the third height h3.

[0049] In this exemplary embodiment, the substrate inversion unit R inverts the substrate W while holding it. This allows the substrate W to be inverted while suppressing changes in its horizontal position (x and y directions in Figure 5) before and after inversion by the substrate inversion unit R. As a result, the footprint of the substrate W can be reduced, and consequently, the size of the substrate inversion chamber VR in plan view can be reduced.

[0050] In this exemplary embodiment, the substrate transport unit T2 receives the substrate W from the substrate inversion unit R at a second height h2 which is lower than the first height h1, and transports the substrate W to a third height h3 which is higher than the first height h1 and the second height h2. Thus, according to the substrate processing system of this exemplary embodiment, since the substrate W transported at the first height h1 is further transported to the third height, the height of the first transport port P1 can be made lower than the height of the second transport port P2. As a result, for example, even when the height hm of the upper surface of the substrate processing chamber PM30 is large (for example, when the substrate processing chamber PM30 is a chamber that performs vapor deposition processing), the height ht of the vacuum transport chamber VT can be kept low.

[0051] In the examples shown in Figures 2 to 8, the third height h3 is higher than the first height h1 and the second height h2 (see Figures 4, 6, and 8), but the relationship between the first height h1, the second height h2, and the third height h3 in the substrate processing system of this disclosure is not limited thereto. In one embodiment, the third height h3 may be configured to be lower than the first height h1 and the second height h2. In another embodiment, the third height h3 may be configured to be lower than the first height h1 and higher than the second height h2. This makes it possible to make the height of the first transport port P1 higher than the height of the second transport port P2.

[0052] As described above, this exemplary embodiment can improve the degree of freedom in the device layout.

[0053] Embodiments of this disclosure further include the following embodiments:

[0054] (Note 1) A substrate processing system comprising: a vacuum transport chamber; a substrate inversion chamber connected to the vacuum transport chamber and configured to be a vacuum inside, wherein the substrate inversion chamber comprises a substrate inversion unit and a substrate transport unit, the substrate inversion unit is configured to hold a substrate from the vacuum transport chamber at a first height and invert the substrate while holding it, and the substrate transport unit is configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transport the substrate to a third height different from the first and second heights; and a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

[0055] (Note 2) The substrate processing system according to Note 1, wherein the third height is higher than the first height and the second height.

[0056] (Note 3) The substrate processing system according to Note 2, wherein the substrate inversion unit is configured to hold the substrate at the first height with the processing surface of the substrate facing upward, and then invert it so that the processing surface faces downward.

[0057] (Note 4) The substrate processing system according to Note 3, wherein the substrate transport unit is configured to transport the substrate to the third height with the processing surface facing downwards.

[0058] (Note 5) The substrate processing system according to Note 3 or 4, wherein the substrate processing chamber is configured to perform processing on the substrate with the processing surface facing downwards.

[0059] (Note 6) The substrate processing system according to Note 5, wherein the processing on the substrate in the substrate processing chamber is a vapor deposition process with the processing surface facing downwards.

[0060] (Note 7) The substrate processing system according to any one of Notes 3 to 6, further comprising a second substrate processing chamber connected to the vacuum transfer chamber, wherein the second substrate processing chamber is configured to perform processing on the substrate with the processing surface facing upward.

[0061] (Note 8) The substrate processing system according to Note 7, wherein the processing of the substrate in the second substrate processing chamber is a cleaning process with the processing surface facing upwards.

[0062] (Note 9) The substrate processing system according to any one of Notes 1 to 8, wherein the substrate inversion chamber is provided with a first transport port at a position corresponding to the first height and a second transport port at a position corresponding to the third height.

[0063] (Note 10) The substrate processing system according to any one of Notes 1 to 9, wherein the height of the upper surface of the substrate inversion chamber is higher than the height of the upper surface of the vacuum transfer chamber.

[0064] (Note 11) A substrate inversion chamber configured to be a vacuum inside, the substrate inversion chamber comprising a substrate inversion unit and a substrate transport unit, wherein the substrate inversion unit is configured to hold a substrate at a first height and invert the substrate while holding it, and the substrate transport unit is configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transport the substrate to a third height higher than the first and second heights; and a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

[0065] (Appendix 12) The substrate processing system according to Appendix 12, wherein the third height is higher than the first height and the second height.

[0066] (Note 13) The substrate processing system according to Note 12, wherein the substrate inversion unit is configured to hold the substrate with the processing surface of the substrate facing upward at the first height, and to invert it so that the processing surface faces downward.

[0067] (Note 14) The substrate processing system according to Note 13, wherein the substrate transport unit is configured to transport the substrate to the third height with the processing surface facing downwards.

[0068] (Note 15) The substrate processing system according to Note 14, wherein the substrate processing chamber is configured to perform processing on the substrate with the processing surface facing downwards.

[0069] (Note 16) The substrate processing system according to Note 15, wherein the processing on the substrate in the substrate processing chamber is a vapor deposition process with the processing surface facing downwards.

[0070] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments described above can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.

[0071] PS...Substrate processing system, PM10-PM30...Substrate processing chamber, VT...Vacuum transfer chamber, VR...Substrate inversion chamber, P1...First transfer port, P2...Second transfer port, W...Substrate, Ws...Processing surface

Claims

1. A substrate processing system comprising: a vacuum transport chamber; a substrate inversion chamber connected to the vacuum transport chamber and configured to be a vacuum inside, wherein the substrate inversion chamber comprises a substrate inversion unit and a substrate transport unit, the substrate inversion unit being configured to hold a substrate from the vacuum transport chamber at a first height and invert the substrate while holding it, and the substrate transport unit being configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transport the substrate to a third height different from the first and second heights; and a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

2. The substrate processing system according to claim 1, wherein the third height is greater than the first height and the second height.

3. The substrate inversion unit is configured to hold the substrate at the first height with the processing surface of the substrate facing upward, and to invert it so that the processing surface faces downward, as described in claim 2.

4. The substrate processing system according to claim 3, wherein the substrate transport unit is configured to transport the substrate to the third height with the processing surface facing downwards.

5. The substrate processing system according to claim 4, wherein the substrate processing chamber is configured to perform processing on the substrate with the processing surface facing downwards.

6. The substrate processing system according to claim 5, wherein the processing on the substrate in the substrate processing chamber is a vapor deposition process with the processing surface facing downwards.

7. The substrate processing system according to claim 5, further comprising a second substrate processing chamber connected to the vacuum transfer chamber, wherein the second substrate processing chamber is configured to perform processing on the substrate with the processing surface facing upward.

8. The substrate processing system according to claim 7, wherein the processing of the substrate in the second substrate processing chamber is a cleaning process with the processing surface facing upward.

9. The substrate processing system according to claim 1, wherein the substrate inversion chamber is provided with a first transport port at a position corresponding to the first height and a second transport port at a position corresponding to the third height.

10. The substrate processing system according to claim 1, wherein the height of the upper surface of the substrate inversion chamber is greater than the height of the upper surface of the vacuum transfer chamber.

11. A substrate inversion chamber configured to be a vacuum inside, the substrate inversion chamber comprising a substrate inversion unit and a substrate transport unit, wherein the substrate inversion unit is configured to hold a substrate at a first height and invert the substrate while holding it, and the substrate transport unit is configured to receive the substrate from the substrate inversion unit at a second height lower than the first height and transport the substrate to a third height different from the first and second heights; and a substrate processing chamber connected to the substrate inversion chamber and configured to receive the substrate at the third height.

12. The substrate processing system according to claim 11, wherein the third height is higher than the first height and the second height.

13. The substrate processing system according to claim 12, wherein the substrate inversion unit is configured to hold the substrate at the first height with the processing surface of the substrate facing upward, and then invert it so that the processing surface faces downward.

14. The substrate processing system according to claim 13, wherein the substrate transport unit is configured to transport the substrate to the third height with the processing surface facing downwards.

15. The substrate processing system according to claim 14, wherein the substrate processing chamber is configured to perform processing on the substrate with the processing surface facing downwards.

16. The substrate processing system according to claim 15, wherein the processing on the substrate in the substrate processing chamber is a vapor deposition process with the processing surface facing downwards.

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