Method for depositing film comprising transition metal chalcogenide and chalcogen precursor therefor

Abstract

Provided is a method for depositing a film comprising a transition metal chalcogenide, the method comprising the steps of: injecting a transition metal precursor and a chalcogen precursor into a chamber; and reacting the transition metal precursor with the chalcogen precursor to deposit a film comprising a transition metal chalcogenide on a substrate, wherein the chalcogen precursor comprises a chalcogen-to-chalcogen bond, and a bond decomposition energy of the chalcogen-to-chalcogen bond is 275 kJ / mol or less.

Description

Method for depositing a film containing a transition metal chalcogen and a chalcogen precursor for the same

[0001] The present invention relates to a method for depositing a film comprising a transition metal chalcogen and a chalcogen precursor for the same, and more specifically, to a method for depositing a film comprising a transition metal chalcogen capable of uniformly depositing a chalcogen film on a substrate at a low temperature and a chalcogen precursor for the same.

[0002] Two-dimensional (2D) materials are defined as single-layer materials composed of single atoms and single compounds. Since graphene was first announced in 2004, hundreds of materials have been reported, including graphene, borophene, germanene, silicene, stanene, phosphorene, boron nitride, transition metal dichalcogen (TMD), single-layer palladium (Pd), and single-layer rhodium (Rh).

[0003] Transition metal chalcogenides (TMDs), such as molybdenum disulfide (MoS2), are considered new materials for electronic devices such as semiconductors and are attracting attention as next-generation semiconductor materials capable of overcoming the limitations of silicon devices due to their exceptional electrical, physical, and chemical properties.

[0004] Transition metal chalcogenization, CVD, and ALD methods have been disclosed as technologies for growing transition metal chalcogenide films. However, all of these methods face challenges, such as high process temperatures, when growing large-area, uniform thin films. Therefore, there is a need to develop a technology capable of growing high-quality transition metal chalcogenide films over large areas even under low-temperature conditions.

[0005] Therefore, the problem that the present invention aims to solve is to provide a method for depositing a film containing a new transition metal chalcogen considering the material properties of the chalcogen precursor, and a chalcogen precursor for this purpose.

[0006] To solve the above problem, the present invention provides a method for depositing a film containing a transition metal chalcogen, comprising the steps of: injecting a transition metal precursor and a chalcogen precursor into a chamber; and reacting the transition metal precursor and the chalcogen precursor to deposit a film containing a transition metal chalcogen on a substrate, wherein the chalcogen precursor includes inter-chalcogen bonds and the bond decomposition energy of the inter-chalcogen bonds is 275 kJ / mol or less.

[0007] In one embodiment of the present invention, the chalcogen precursor has the structure of the following formula.

[0008] R1-Xn-R1

[0009] (In the above formula, X is a chalcogen element, R1 is hydrogen, an alkyl group having 1 to 4 carbon atoms, and n is 2 to 4)

[0010] In one embodiment of the present invention, the chalcogen of the chalcogen precursor is any one of S, Te, and Se.

[0011] In one embodiment of the present invention, the chalcogen precursor is dimethyl disulfide or dimethyl diselenide.

[0012] In one embodiment of the present invention, a method for depositing a film containing the transition metal chalcogen comprises supplying an organometallic promoter to the chamber and reacting the transition metal precursor and the chalcogen precursor together with the organometallic promoter to deposit a film containing the transition metal chalcogen on a substrate.

[0013] In one embodiment of the present invention, the organometallic promoter is an organoalkali metal and has a vapor pressure of 0.1 mmHg or more at room temperature.

[0014] In one embodiment of the present invention, the organometallic promoter comprises any one of sodium propionate, sodium formate, sodium tert-butoxide, and potassium tert-butoxide.

[0015] In one embodiment of the present invention, the decomposition temperature of the chalcogen precursor is 500 degrees Celsius or lower.

[0016] In one embodiment of the present invention, the transition metal precursor comprises any one of a transition metal halide, a transition metal oxyhalide, and a transition metal carbonyl.

[0017] In one embodiment of the present invention, the transition metal precursor is any one of MoO2Cl2, MoCl5, WOCl4, WCl5, Mo(CO)6, and W(CO)6.

[0018] The present invention provides a chalcogen precursor for manufacturing a membrane comprising a transition metal chalcogen, wherein the chalcogen precursor has a structure of the following formula.

[0019] R1-Xn-R1

[0020] (In the above formula, X is a chalcogen element, R1 is hydrogen, an alkyl group having 1 to 4 carbon atoms, and n is 2 to 4)

[0021] In one embodiment of the present invention, the chalcogen of the chalcogen precursor is any one of S, Te, and Se.

[0022] The above chalcogen precursor is dimethyl disulfide or dimethyl diselenide.

[0023] In one embodiment of the present invention, the decomposition temperature of the chalcogen precursor is 500 degrees Celsius or lower, and the vapor pressure is 0.05 mmHg (at 25 degrees Celsius) or higher.

[0024] The present invention enables the deposition of transition metal chalcogen films at a lower temperature compared to conventional processes by using a chalcogen precursor having inter-bond bonds with low inter-bond decomposition energy in the deposition process. As a result, transition metal chalcogen films with excellent properties can be deposited on various substrates.

[0025] FIG. 1 is a step diagram of a method for depositing a film containing a transition metal chalcogen according to one embodiment of the present invention.

[0026] Figure 2 shows the analysis results for Examples 1 and 2 from the left, and Figure 3 shows the analysis results for the deposition layer of Comparative Example 2.

[0027] Figure 4 shows the analysis results for Examples 1 and 2 from the left.

[0028] Figures 5 to 8 are the analysis results for Examples 1 to 3 and Comparative Example 1, respectively.

[0029] Figures 9 and 10 are the analysis results for Examples 1 and 2, respectively.

[0030] Figure 11 summarizes the schematic diagram and device characteristics of the device according to the present experimental example, and Figure 12 is the IV graph of the device.

[0031] Figure 13 is a schematic diagram of the device and device characteristics according to the present experimental example, and Figure 14 is an IV graph of the device.

[0032] Figures 15 to 17 show the analysis results according to the use of a facilitator.

[0033] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0034] Before describing the invention in detail, the terms and words used in this specification should not be interpreted as being limited to their ordinary or dictionary meanings, and the inventor of the invention may appropriately define and use the concepts of various terms to best describe his invention.

[0035] Furthermore, it should be understood that these terms or words should be interpreted in a meaning and concept consistent with the technical spirit of the present invention.

[0036] In other words, the terms used in this specification are used merely to describe preferred embodiments of the invention and are not intended to specifically limit the content of the invention.

[0037] It should be noted that these terms are defined in consideration of the various possibilities of the present invention.

[0038] Additionally, in this specification, singular expressions may include plural expressions unless the context clearly indicates a different meaning.

[0039] In addition, you should be aware that even if it is expressed in the plural, it may contain a singular meaning.

[0040] Throughout this specification, where it is stated that a component "includes" another component, unless specifically stated otherwise, this may mean that it does not exclude any other component but may include any other component.

[0041] Furthermore, in cases where it is stated that a component "exists inside or is installed in connection with" another component, this component may be installed in direct connection with or in contact with the other component.

[0042] In addition, they may be installed spaced apart at a certain distance, and in the case where they are installed spaced apart at a certain distance, there may be a third component or means for fixing or connecting the component to another component.

[0043] Meanwhile, it should be noted that the description of the third component or means mentioned above may be omitted.

[0044] On the other hand, if it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there is no third component or means.

[0045] Likewise, other expressions describing the relationship between each component, such as “between” and “right between”, or “adjacent to” and “directly adjacent to”, should be interpreted as having the same intent.

[0046] In addition, terms such as “one side,” “other side,” “one side,” “other side,” “first,” “second,” etc., in this specification are used to ensure that one component can be clearly distinguished from another component.

[0047] However, it should be noted that the meaning of the component is not used restrictively by such terminology.

[0048] In the drawings attached to this specification, the size, position, connection relationships, etc., of each component constituting the present invention may be described in a partially exaggerated, reduced, or omitted manner for the convenience of explanation or to sufficiently clearly convey the concept of the present invention, and therefore, the proportions or scale may not be strictly accurate.

[0049] In addition, in describing the present invention below, detailed descriptions of components that are deemed to unnecessarily obscure the essence of the invention, such as known technologies including prior art, may be omitted.

[0050] To solve the above-mentioned problem, the present invention applies a chalcogen precursor having at least one inter-chalcogen bond and an inter-chalcogen bond decomposition energy of 275 kJ / mol or less to a deposition process. This allows a uniform transition metal chalcogen film to be grown even at low temperatures of 500 degrees or less.

[0051] A chalcogen precursor according to one embodiment of the present invention has the structure of the following formula (1).

[0052] R1-Xn-R1(1)

[0053] In the above formula, X is a chalcogen element, R1 is hydrogen, an alkyl group having 1 to 4 carbon atoms, and n is 2 to 4.

[0054] In the above chemical formula, XX, that is, the inter-chalcogen bond, is at least one, and the bond breaking energy is 275 kJ / mol or less. Through these material properties, the present invention enables the synthesis of high-quality transition metal chalcogenides by allowing chalcogen radicals with relatively high partial pressure to participate in the reaction at a low temperature of 500°C or less (compared to existing processes).

[0055] In one embodiment of the present invention, the chalcogen of the chalcogen precursor is any one of S, Te, and Se, and the precursor according to one embodiment of the present invention has at least one inter-chalcogen bond as described above.

[0056] Dimethyl disulfide or dimethyl diselenide was used as such a precursor in one embodiment of the present invention, but the scope of the present invention is not limited thereto.

[0057] The present invention will be explained in more detail below using the drawings and examples.

[0058] FIG. 1 is a step diagram of a method for depositing a film containing a transition metal chalcogen according to one embodiment of the present invention.

[0059] Referring to FIG. 1, a deposition method according to one embodiment of the present invention includes the step of injecting a transition metal precursor and a chalcogen precursor into a chamber.

[0060] The present invention has discovered that the growth temperature and results are significantly affected by the interbond decomposition energy of the chalcogen precursor described above rather than the transition metal precursor. Accordingly, the transition metal precursor may be any one of known precursors containing transition metals such as Mo, W, Ta, V, Nb, Ti, Zr, Hf, Tc, Re, Pd, and Pt, namely transition metal halides, transition metal oxyhalides, and transition metal carbonyls, all of which fall within the scope of the present invention.

[0061] For example, such transition metal precursors may be any one of MoO2Cl2, MoCl5, WOCl4, WCl5, Mo(CO)6, and W(CO)6.

[0062] The deposition method according to the present invention includes the step of reacting the transition metal precursor and the chalcogen precursor at a temperature of 500 degrees or less to deposit a film containing a transition metal chalcogen on a substrate. At this time, an organometallic promoter, such as an organoalkali metal, may be used in the deposition step.

[0063] The table below summarizes the bond decomposition energies of the chalcogen precursors used as embodiments and comparative examples of the present invention.

[0064] Material RS Bond Breakdown Energy (kJ / mol) (R is H or Alkyl) SS Bond Breakdown Energy (kJ / mol) HS-H384.1 None HSS-H309.4271 H-SSS-H304.7221.9 HSSSS-H298219 CH3-S-CH3309.2 None CH3-SS-CH3246.7270.5 CH3-SSS-CH3258.8215.3 CH3-SSSS-CH3247.8221.9

[0065]

[0066] Referring to the results in Table 1 above, the chalcogen precursor according to the present invention has at least one inter-chalcogen bond and its decomposition energy is less than 275 kJ / mol. As a result, the decomposition of the precursor required for the reaction occurs even at a lower process temperature (500 degrees Celsius or lower) compared to conventional processes, thereby generating chalcogen radicals capable of participating in the synthesis of high-quality two-dimensional transition metal chalcogenide crystals, which will be explained in more detail in the experimental examples below.

[0067] In addition, the vapor pressure of the chalcogen precursor according to the present invention at room temperature (25°C) is 0.05 mmHg or higher. For example, dimethyltetrasulfide having inter-chalcogen bonds has a vapor pressure of 0.051 mmHg at room temperature. The chalcogen precursor supplied in this gaseous state vaporizes at a temperature of 500°C or lower, and the inter-chalcogen bonds decompose.

[0068] In the above deposition step, an organoalkali metal having a vapor pressure of 0.1 mmHg or more at room temperature may be used. As such an organoalkali metal, organometallic compounds such as sodium propionate, sodium formate, sodium tert-butoxide, and potassium tert-butoxide may be used.

[0069] In one embodiment of the present invention, sodium propionate (SP) is supplied to a deposition chamber as an organometallic promoter. Thereby, the transition metal precursor and the chalcogen precursor are reacted together with sodium propionate in the chamber to deposit a film containing a transition metal chalcogen on a substrate.

[0070] In particular, sodium propionate, a promoter according to one embodiment of the present invention, decomposes at 500 degrees Celsius or lower and vaporizes under conditions similar to transition metal chalcogens to promote uniform film growth.

[0071]

[0072] Examples

[0073] In the present invention, four types of high-quality transition metal chalcogen films were synthesized using MOCVD under the following conditions and methods. Mo(CO)6 and W(CO)6 were used as transition metal precursors, (CH3)2S2 and (CH3)2Se2 were used as chalcogen precursors, SP was used as an organometallic promoter, Ar was used as a carrier gas, and O2 and H2 were injected together.

[0074] The flow rate of the precursors was controlled using a Mass Flow Controller (MFC) in a Bubbler System. The transition metal precursors were heated to 60°C, and the pressure of all precursors was maintained at 800 Torr. The growth conditions used were Mo(CO) 61.0 sccm, W(CO) 63.5 sccm, (CH3)2S2 2.0 sccm, (CH3)2Se2 2.5 sccm, SP 10 sccm, O2 1 sccm, and H2 10 sccm.

[0075] The synthesis chamber was heated to 400°C for 50 minutes in an atmosphere of Ar 10 sccm and H2 10 sccm, and a transition metal chalcogenide film was synthesized for 4 hours by simultaneously injecting a transition metal precursor, a chalcogenide precursor, SP, O2, and H2 into the chamber at 400°C. After synthesis, the synthesis chamber was slowly cooled to room temperature for 1 hour.

[0076]

[0077] Comparative example

[0078] As a comparative example, a film was deposited in the same manner as in the example, except that diethyl selenide (DESe) and diethyl sulfide (DES), which have one chalcogen element, were used as chalcogen precursors.

[0079] Tables 2 and 3 below summarize the conditions according to the examples and comparative examples, respectively.

[0080] Experiment Transition Metal Precursor Chalcogen Precursor Process Temperature (°C) Promoter Execution (1) MoS2Mo(CO)6DMDS400SP Execution (2) WSe2W(CO)6DMDSe425SP Execution (3) MoSe2Mo(CO)6DMDSe450SP

[0081]

[0082] Experimental Transition Metal Precursor Chalcogen Precursor Process Temperature (°C) Promoter Comparison (1) MoSe2Mo(CO)6DMDSe450SP Comparison (2) WSe2W(CO)6DMDSe425SP

[0083]

[0084] Experimental Example

[0085] Deposition status

[0086] In the case of Comparative Example 1, MoSe2 did not grow. This strongly demonstrates that the structure of the chalcogen precursor significantly affects actual film growth.

[0087]

[0088] Membrane analysis results

[0089] Scanning Electron Microscope (SEM) Analysis Results

[0090] Figure 2 shows the analysis results of Examples 1 and 2 from the left, and Figure 3 shows the analysis results of the deposition layer of Comparative Example 2.

[0091] The left side of Fig. 2 is an SEM image of a MoS2 crystal grown on a substrate, and the right side of Fig. 2 is an SEM image of a WSe2 crystal. As the deposition time increases, the empty spaces between the crystals are filled, forming a single or two-layer transition metal chalcogen thin film on the substrate.

[0092] Figure 3 is an SEM image of a WSe2 crystal, and it can be seen that, unlike the transition metal chalcogen crystals in the images of Figure 2, it is formed as a vertically stacked multilayer crystal.

[0093] Referring to Figures 2 and 3, it can be seen that when a chalcogen precursor having inter-chalcogen bonds is used in the deposition process, a film is uniformly deposited and grown on the substrate. In particular, in the case of Comparative Example 2, WSe2 synthesis is possible, but since the film grows as a multilayer crystal, it is difficult to form a film-like structure on the substrate.

[0094]

[0095] AFM analysis results

[0096] Figure 4 shows the analysis results for Examples 1 and 2 from the left. In Figure 4, the transition metal chalcogen film, whose growth was confirmed through Figure 2, was observed by magnification using an atomic force microscope (AFM). The left side of Figure 4 is an AFM image of MoS2, and the right side is an AFM image of WSe2. Through the two images, it can be confirmed that single-layer or double-layer transition metal chalcogen crystals were uniformly deposited.

[0097] Looking at the above results, it can be confirmed that when the chalcogen precursor according to the present invention is used in a deposition process, MoS2 and WSe2 crystals grow at a point between a single layer and a double layer, having a size of 100 to 200 nm.

[0098]

[0099] Raman spectroscopy and photoluminescence (PL) analysis results

[0100] Figures 5 to 8 are the analysis results for Examples 1 to 3 and Comparative Example 1, respectively.

[0101] The top of Fig. 5 is the Raman spectrum of the MoS2 thin film deposited in Example 1, and the bottom is the PL spectrum. In the Raman spectrum, E of MoS2 2g Peak position at 385 cm -1 , A 1g Peak position at 407 cm -1A peak was observed in the vicinity of , thus confirming that MoS2 was deposited. It was confirmed that a single-layer or double-layer MoS2 thin film was deposited through the exciton peak near 1.86 eV and a decent full width at half maximum value of 71 meV present in the PL spectrum.

[0102] The top of Fig. 6 is the Raman spectrum of the WSe2 thin film deposited in Example 2, and the bottom is the PL spectrum. The peak of the Raman spectrum was observed at 250 cm⁻¹. -1 is the Eg eigenvibrational mode of WSe2, indicating that the synthesized material is WSe2. It was confirmed that a high-quality WSe2 thin film with a single to double layer thickness was deposited through the exciton peak near 1.61 eV and a decent full width at half maximum value of 98 meV present in the PL spectrum.

[0103] Figure 7 is the Raman spectrum of the MoSe2 thin film deposited in Example 3. In the Raman spectrum, A of MoSe2 1g Peak position at 242 cm -1 and E 2g Peak position at 285 cm -1 A peak was observed at, and thus it can be confirmed that MoSe2 was deposited.

[0104] Figure 8 is the Raman spectrum for the substrate of Comparative Example 1. A of MoSe2 1g Peak position at 242 cm -1 and E 2g Peak position at 285 cm -1 No peak was observed at, and therefore it can be confirmed that MoSe2 was not deposited.

[0105]

[0106] X-ray photoelectron spectroscopy (XPS) analysis

[0107] Figures 9 and 10 show the analysis results for Examples 1 and 2, respectively. In the case of the comparative example, XPS analysis was not possible because the film itself did not grow.

[0108] Figure 9 shows the XPS analysis results of the transition metal chalcogen thin film grown in Example 1, confirming the binding energies of the electrons in the 3d orbitals of Mo and the 2s and 2p core levels of S, respectively. A peak corresponding to the binding energy of MoS2 can be seen in the spectrum, and it was confirmed that the elemental ratio of Mo to S in the MoS2 thin film is composed of Mo : S = 1 : 2.

[0109] Figure 10 shows the XPS analysis results of the transition metal chalcogen thin film grown in Example 2, confirming the 4f orbital of W and the 3d orbital of Se, respectively. A peak corresponding to the binding energy of WSe2 can be seen in the spectrum, and it was confirmed that the elemental ratio of W to Se in the WSe2 thin film is W : Se = 1 : 2.03.

[0110]

[0111] Characteristic analysis results

[0112] MoS2 Act

[0113] In this experimental example, the performance of an n-MOSFET fabricated using the low-temperature grown MoS2 thin film of Example 1 as the channel material was verified.

[0114] Figure 11 summarizes the schematic diagram and device characteristics of the device according to the present experimental example, and Figure 12 is the IV graph of the device.

[0115] The center figure of Fig. 11 is a schematic diagram of a device fabricated using a MoS2 transition metal chalcogenide thin film deposited according to Example 1, and the left side is an optical microscope image of the device array. A highly doped silicon wafer with a 100 nm silicon oxide (SiO2) insulating layer was used as the substrate, and it operated as a bottom gate. Bi / Au was used for the source and drain electrodes, and Al2O3 was used as the encapsulating agent. The right side shows the I measured in each device array. on / I off ratio and I on / W chThe table shows the average and maximum values ​​of electron mobility (μ) and subthreshold swing (SS).

[0116] Fig. 12 is I sd -V g As shown in the graph, with a drain voltage of 0.5V applied, the gate voltage (V g The change in current density according to ) was measured. The channel length (L of the device ch ) is 5μm, and the channel width (W ch ) is 20μm.

[0117] Referring to Figures 11 and 12, the maximum on-current density is 1.47 μAμm -1 , charge mobility 11.8 cm 2 V -1 s -1 It can be seen that it exhibits excellent characteristics.

[0118]

[0119] WSe2 Act

[0120] In this experimental example, the performance of a p-MOSFET fabricated using the low-temperature grown WSe2 thin film of Example 2 as the channel material was verified.

[0121] Figure 13 is a schematic diagram of the device and device characteristics according to the present experimental example, and Figure 14 is an IV graph of the device.

[0122] The center figure of Fig. 13 is a schematic diagram of a device fabricated using a WSe2 transition metal chalcogenide thin film deposited according to Example 2, and the left side is an optical microscope image of the device array. A silicon wafer with a 100 nm silicon oxide (SiO2) insulating layer was used as the substrate, and it operated as a bottom gate. Pt / Au was used for the source and drain electrodes. The right side shows the I measured in each device array. on / I off ratio and I on / W ch The table shows the average and maximum values ​​of electron mobility (μ) and subthreshold swing (SS).

[0123] Figure 14 shows the gate voltage (V g Current density (I) according to ) ds / W ch As a graph, with a drain voltage of 0.5V applied, the gate voltage (V g The change in current density according to ) was measured. The channel length (L of the device ch ) is 5μm, and the channel width (W ch ) is 20μm.

[0124] Referring to Figures 13 and 14, the maximum on-current density is 0.0389 μAμm -1 , charge mobility 0.029 cm 2 V -1 s -1 It exhibits the electrical characteristics of.

[0125] Figures 15 to 17 show the results of observing the thin film quality using SEM according to the type of promoter and whether it is used.

[0126] The left side of Fig. 15 is an SEM image of MoS2 deposited without using a promoter. The middle side is an SEM image of MoS2 deposited using SP. The right side is an SEM image of MoS2 deposited using sodium tert-butoxide (STBO). In all three images, it can be confirmed that MoS2 crystals have grown. However, when a promoter was used, the crystal size grew significantly from several hundred nanometers to about 1 micrometer, confirming that the promoter promotes the growth of transition metal chalcogen thin films.

[0127] The left side of Fig. 16 is an SEM image of PtSe2 deposited without using a promoter. The right side is an SEM image of PtSe2 deposited using potassium tert-butoxide (PTBO). In both images, it can be confirmed that PtSe2 crystals have grown. However, when a promoter was used, the crystal size grew significantly to several hundred nanometers, confirming that the promoter promotes the growth of transition metal chalcogen thin films.

[0128] The left side of Fig. 17 is an SEM image of WSe2 deposited without using a promoter. The right side is an SEM image of WSe2 deposited using sodium formate (SF6). In both images, it can be seen that WSe2 crystals have grown. However, when a promoter was used, the crystal size grew significantly, ranging from tens to hundreds of nanometers, confirming that the promoter promotes the growth of transition metal chalcogen thin films.

[0129] As explained above, the present invention enables the deposition of a film containing transition metal chalcogens at a lower temperature compared to conventional processes by using a chalcogen precursor having low decomposition energy in the deposition process.

[0130] The present invention relates to a method for depositing a film comprising a transition metal chalcogen and a chalcogen precursor for the same, and is recognized as having industrial applicability.

Claims

A method for depositing a film containing transition metal chalcogens, A step of injecting a transition metal precursor and a chalcogen precursor into a chamber; and The method includes the step of reacting the above transition metal precursor and chalcogen precursor in a gas phase to deposit a film containing transition metal chalcogen on a substrate. The above chalcogen precursor contains inter-chalcogen bonds, and the bond breaking energy of the inter-chalcogen bonds is 275 kJ / mol or less, and A method for depositing a film containing a transition metal chalcogen, characterized in that the film containing the transition metal chalcogen deposited above is a single layer or a double layer. In Article 1, A method for depositing a film containing a transition metal chalcogen, characterized in that the above chalcogen precursor has a structure of the following formula. R1-Xn-R1 (In the above formula, X is a chalcogen element, R1 is hydrogen, an alkyl group having 1 to 4 carbon atoms, and n is 2 to 4) In Article 1, A method for depositing a film containing a transition metal chalcogen, characterized in that the chalcogen of the above chalcogen precursor is one of S, Te, and Se. A method for depositing a film containing a transition metal chalcogen, characterized in that, in claim 3, the chalcogen precursor is dimethyl disulfide or dimethyl diselenide. In claim 1, the method for depositing a film comprising the transition metal chalcogen is, A method for depositing a film containing a transition metal chalcogen, characterized by supplying an organometallic promoter to the chamber and reacting the transition metal precursor and the chalcogen precursor together with the organometallic promoter to deposit a film containing a transition metal chalcogen on a substrate. In Paragraph 5, A method for depositing a film containing a transition metal chalcogen, characterized in that the organometallic promoter is an organoalkali metal having a vapor pressure of 0.1 mmHg or more at room temperature. In Paragraph 6, A method for depositing a film containing a transition metal chalcogen, characterized in that the organometallic promoter comprises any one of sodium propionate, sodium formate, sodium tert-butoxide, and potassium tert-butoxide. In Article 1, A method for depositing a film containing a transition metal chalcogen, characterized in that the decomposition temperature of the chalcogen precursor is 500 degrees Celsius or lower. In Article 1, A method for depositing a film containing a transition metal chalcogen, characterized in that the above transition metal precursor comprises any one of a transition metal halide, a transition metal oxyhalide, and a transition metal carbonyl. In Article 9, A method for depositing a film containing a transition metal chalcogen, characterized in that the above transition metal precursor is any one of MoO2Cl2, MoCl5, WOCl4, WCl5, Mo(CO)6, and W(CO)6.

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