Gas detection curve smoothing method, cleaning control method, electronic device, and semiconductor process device

Abstract

The present application relates to a gas detection curve smoothing method, a cleaning control method, an electronic device, and a semiconductor process device. The gas detection curve smoothing method comprises: acquiring a curve of a clean output gas which is output by an end-point detection apparatus, wherein the curve of the clean output gas comprises all cleaning output values between a first cleaning output value and the current cleaning output value of the clean output gas; and using the first cleaning output value as a first cleaning estimated value, and on the basis of a preset forgetting parameter, performing smoothing processing on the curve of the clean output gas, so as to obtain cleaning estimated values corresponding to the cleaning output values. By using a preset forgetting parameter as a smoothing factor and a first cleaning output value as a first cleaning estimated value, smoothing of the curve of a clean output gas can be implemented with a smaller calculation amount and a faster calculation speed, which not only provides a more accurate determination basis for a subsequent cleaning progress, but also lays the foundation for improving the cleaning efficiency.

Description

Gas detection curve smoothing methods, cleaning control methods, electronic equipment and semiconductor process equipment Technical Field

[0001] This application relates to the field of semiconductor fabrication technology, specifically to a method for smoothing gas detection curves, a cleaning control method, electronic equipment, and semiconductor process equipment. Background Technology

[0002] Maintaining a favorable preparation environment is crucial for improving semiconductor fabrication efficiency and product quality. Accurately controlling the cleaning process is essential for ensuring a suitable preparation environment.

[0003] Among them, detecting the concentration of reaction products in the clean output gas is an important technical means to judge the cleaning progress and ensure a good preparation environment. Correspondingly, how to quickly and accurately obtain the concentration of reaction products that can be used for judgment is a technical problem that urgently needs to be solved. Summary of the Invention

[0004] In view of this, this application aims to provide a method for smoothing gas detection curves, a cleaning control method, an electronic device, and a semiconductor process equipment, which can quickly and accurately obtain the concentration of reaction products that can be used for judgment.

[0005] According to a first aspect of this application, a method for smoothing a gas detection curve is provided, comprising:

[0006] Obtain the curve of the clean output gas output by the endpoint detection device; the curve of the clean output gas includes all clean output values ​​between the first clean output value detected by the endpoint detection device and the current clean output value;

[0007] Using the first clean output value as the first clean estimate, the curve of the clean output gas is smoothed based on a preset forgetting parameter to obtain the clean estimate corresponding to each of the clean output values.

[0008] In some embodiments, smoothing the curve of the clean output gas to obtain a cleanliness estimate corresponding to each of the clean output values ​​includes:

[0009] Based on the first cleaning estimate, the current cleaning output value, and the preset forgetting parameter, the current cleaning estimate corresponding to the current cleaning output value is calculated;

[0010] The calculation process for the current cleanliness estimate includes:

[0011] By multiplying the previous cleaning estimate by a preset forgetting parameter, a partial previous cleaning estimate is obtained; by subtracting the preset forgetting parameter from 1 and then multiplying it by the current cleaning output value, a partial current cleaning output value is obtained.

[0012] The previous cleaning estimate and the current cleaning output value of the aforementioned portion are summed to obtain the current cleaning estimate.

[0013] In some embodiments, the range of the preset forgetting parameter includes [0.4 to 0.95].

[0014] According to a second aspect of this application, a cleaning control method is provided, applied to semiconductor process equipment, the semiconductor process equipment including a process chamber and an endpoint detection device; the method includes:

[0015] Perform the first plasma cleaning process;

[0016] The current curve of the clean output gas output by the endpoint detection device is obtained, the current curve including all output values ​​between the first output value detected by the endpoint detection device and the current output value; the current curve is smoothed based on the method as described in the first aspect of this application to obtain a previous estimate and a current estimate corresponding to the previous output value and the current output value, respectively.

[0017] Determine whether the previous estimated value and the current estimated value satisfy a first preset condition; the first preset condition includes: the previous estimated value is greater than a preset process conversion value, and the current estimated value is less than the preset process conversion value;

[0018] If the previous estimate and the current estimate satisfy the first preset condition, then the second plasma cleaning process is executed.

[0019] In some embodiments, after performing the second plasma cleaning process, the method further includes:

[0020] The detection process is checked to see if it has reached a preset detection point. The preset detection point is the time point at which the difference between the current estimated value and the previous estimated value is less than a first threshold for the first time, and the difference between the current estimated value and the expected threshold is less than the first preset threshold for the first time.

[0021] If the process reaches the preset detection point, the time when the process reaches the preset detection point is recorded as the first time point;

[0022] Obtain the extended duration, and determine the second time point based on the first time point and the extended duration;

[0023] If the process reaches the second time point, the second plasma cleaning process is stopped.

[0024] In some embodiments, obtaining the extended duration includes:

[0025] The extended duration is determined by one of the calculation duration, the input duration, and the preset duration.

[0026] The calculation time is determined based on preset cleaning parameters and a first cleaning time. The first cleaning time is determined based on a third time point and the first time point. The third time point is the time point when the difference between the current estimated value and the expected threshold is first detected to be greater than a second preset threshold during the execution of the first plasma cleaning process.

[0027] The input duration includes the duration provided by the user based on the interactive interface;

[0028] The preset duration includes the duration corresponding to the model of the semiconductor process equipment.

[0029] In some embodiments, the semiconductor process equipment further includes a vacuum line connected to a process chamber and a detection line connected in parallel with the vacuum line; the endpoint detection device is located within the detection line.

[0030] The execution of the first plasma cleaning process includes:

[0031] Based on the first process formulation, process gas is introduced into the process chamber, and the detection pipeline where the endpoint detection device is located is controlled to be in a conductive state, so that the gas discharged from the process chamber through the vacuum pipeline passes through the detection pipeline.

[0032] In some embodiments, performing the second plasma cleaning process includes:

[0033] The first process formulation is switched to the second process formulation, and process gas is introduced into the process chamber based on the second process formulation; the first process formulation and the second process formulation are different process formulations.

[0034] In some embodiments, after stopping the second plasma cleaning process, the method further includes:

[0035] The detection pipeline where the endpoint detection device is located is kept in a closed state.

[0036] According to a third aspect of this application, an electronic device is provided, comprising:

[0037] A processor, and a memory connected to the processor;

[0038] The memory is used to store computer programs;

[0039] The processor is used to invoke and execute the computer program in the memory to perform the gas detection curve smoothing method as described in the first aspect of this application, and / or the cleaning control method as described in the second aspect of this application.

[0040] According to a fourth aspect of this application, a semiconductor process apparatus is provided, including a process chamber, an endpoint detection device, and an electronic device as described in a third aspect of this application.

[0041] In this application, the cleaning control method includes: acquiring a curve of the clean output gas output by an endpoint detection device; the curve of the clean output gas includes all clean output values ​​between the first clean output value detected by the endpoint detection device and the current clean output value; using the first clean output value as the first clean estimate value, and based on a preset forgetting parameter, smoothing the curve of the clean output gas to obtain the clean estimate value corresponding to each clean output value. Thus, by using the preset forgetting parameter as a smoothing factor and the first clean output value as the first clean estimate value, the smoothing of the clean output gas curve can be achieved with less computation and faster processing speed, thereby obtaining the concentration of reaction products that can be used to determine the cleaning progress more quickly and accurately, laying the foundation for improving cleaning efficiency. Attached Figure Description

[0042] The accompanying drawings used in the description of the embodiments or prior art are briefly introduced below with reference to the accompanying drawings. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0043] Figure 1 is a schematic diagram of a testing device provided in an embodiment of this disclosure;

[0044] Figure 2 is a schematic diagram of a test balancing mechanism provided in an embodiment of this disclosure;

[0045] Figure 3 is an enlarged schematic diagram of region E in Figure 1;

[0046] Figure 4 is a schematic diagram of the torque principle in Figure 1;

[0047] Figure 5 is a schematic diagram of a wafer skipping mechanism provided in an embodiment of this disclosure;

[0048] Figure 6 is a schematic flowchart of a testing method for a semiconductor cleaning equipment provided in an embodiment of this disclosure;

[0049] Figure 7 is a schematic diagram of the structure of a computing device provided in an embodiment of this disclosure. Detailed Implementation

[0050] Unless otherwise defined, the technical or scientific terms used in the embodiments of this specification shall have the ordinary meaning understood by one of ordinary skill in the art to which this specification pertains. The terms "first," "second," and similar terms used in the embodiments of this specification do not indicate any order, quantity, or importance, but are merely used to avoid confusion of constituent elements.

[0051] Unless the context otherwise requires, throughout this specification, "a plurality of" means "at least two," and "including" is interpreted as open-ended or encompassing, that is, "including, but not limited to." In the description of this specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this specification. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example.

[0052] The technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this specification.

[0053] In semiconductor manufacturing processes, cleaning the internal chambers of semiconductor process equipment (such as chemical vapor deposition (CVD), plasma-enhanced CVD, atomic layer deposition (ALD), plasma-enhanced ALD, or other etching and deposition equipment) is a necessary operation to ensure the cleanliness of the process chambers. Correspondingly, the cleaning time is crucial for semiconductor manufacturing processes and production capacity. Accurately controlling the cleaning progress is an important means of ensuring a good manufacturing environment. The concentration of reaction products in the clean output gas is an important standard for assessing the cleaning progress. Therefore, how to quickly and accurately obtain the concentration of reaction products for judgment is a problem that urgently needs to be solved.

[0054] In related technologies, the cleaning progress is determined by detecting the concentration of reaction products in the clean output gas along the discharge path. However, the detection results are affected by several factors, typically including gas, water, and electricity. Specifically, these include the airflow, waterflow, and power frequency during machine operation. Fluctuations in any of these factors can cause significant fluctuations in the output results, making it difficult to reflect the current true state and thus preventing the acquisition of accurate detection results. In such cases, directly using the detection results for judgment can easily lead to errors in judgment, resulting in inaccurate cleaning control.

[0055] Therefore, embodiments of this application provide a method for smoothing a gas detection curve, as shown in FIG1. ​​The method for smoothing a gas detection curve includes at least the following implementation steps:

[0056] S101: Obtain the curve of the clean output gas output by the endpoint detection device; the curve of the clean output gas includes all clean output values ​​between the first clean output value detected by the endpoint detection device and the current clean output value.

[0057] According to the theory of Fourier transform, a complex wave is the superposition of many sine waves of different frequencies. Therefore, the curve of clean output gas can be obtained by the superposition of many sine waves of different frequencies. The output value obtained from the endpoint detection device can be considered as a sample of the superposition of many sine waves of different frequencies. Accordingly, the detection result of the endpoint detection device can include both high-frequency and low-frequency values. Factors affecting the output value typically include gas, water, and electricity. By examining the data of the gas mass flow controller, it can be found that when the machine is running stably, the rate of change in airflow is slow; in other words, the change in airflow is slow, therefore, the signal generated by gas is a low-frequency signal. Water has a constant, continuous flow, meaning the change is slow, also a low-frequency signal. Electricity typically has a frequency of 50Hz, which is a high-frequency signal. The endpoint detection device detects the content of a certain gas in the discharge path. Since the gas condition changes slowly, the content also changes slowly, so the output value to be measured should be low-frequency.

[0058] Correspondingly, a low-pass filter can be used to process the actual output value, thereby filtering out high-frequency signals and providing more accurate data for judging the cleaning results. In other words, the cleaning output value can be filtered to obtain the corresponding cleaning estimate, providing a basis for more accurate subsequent cleaning control operations.

[0059] It is important to understand that the clean output value detected by the endpoint detection device is the concentration of reaction products in the clean output gas.

[0060] S102: Using the first clean output value as the first clean estimate value, and based on the preset forgetting parameter, smooth the curve of the clean output gas to obtain the clean estimate value corresponding to each clean output value.

[0061] The estimated value is the output value after being smoothed and filtered.

[0062] Specifically, based on the first cleaning estimate and the preset forgetting parameter, after determining the second cleaning output value, the corresponding second cleaning estimate can be determined. Similarly, after determining the third cleaning output value, the corresponding third cleaning estimate can be determined based on the second cleaning estimate, the preset forgetting parameter, and the third cleaning output value. This process continues, determining the corresponding current cleaning estimate for each current cleaning output value. During the output process of the endpoint detection device, real-time smoothing of the clean output gas curve can be achieved, laying the foundation for quickly and accurately obtaining the concentration of reaction products that can be used to determine the cleaning progress.

[0063] In this embodiment, the curve of the clean output gas output by the endpoint detection device can be obtained first. This curve includes all clean output values ​​between the first clean output value detected by the endpoint detection device and the current clean output value. Then, using the first clean output value as the first clean estimate, and based on a preset forgetting parameter, the curve of the clean output gas is smoothed to obtain the clean estimate corresponding to each clean output value. In other words, a filtering effect can be achieved by using the preset forgetting parameter. Thus, by using the preset forgetting parameter as a smoothing factor and the first clean output value as the first clean estimate, the curve of the clean output gas is smoothed with less computation and faster processing speed. This allows for faster and more accurate acquisition of the concentration of reaction products that can be used to determine the cleaning progress, laying the foundation for improving cleaning efficiency.

[0064] In some implementations, when smoothing the curve of the clean output gas to obtain the clean estimate corresponding to each clean output value, the current clean estimate corresponding to the current clean output value can be calculated based on the first clean estimate, the current clean output value, and the preset forgetting parameter.

[0065] Specifically, the calculation process of the current cleaning estimate may include: multiplying the previous cleaning estimate by a preset forgetting parameter to obtain a partial previous cleaning estimate; subtracting the preset forgetting parameter from 1 and then multiplying it by the current cleaning output value to obtain a partial current cleaning output value; and summing the partial previous cleaning estimate and the partial current cleaning output value to obtain the current cleaning estimate. In other words, the current estimate = previous estimate × preset forgetting parameter + (1 - preset forgetting parameter) × current output value.

[0066] In this way, each time a new output value is obtained, that is, the current output value and the previous estimate are obtained, the current estimate can be calculated based on the preset forgetting parameters. This smoothing process can be performed without accumulating a large amount of data, which greatly reduces the amount of computation and improves the real-time performance and timeliness of the smoothing process.

[0067] The range of the preset forgetting parameter can include [0.4 to 0.95].

[0068] Specifically, the preset forgetting parameter can be 0.4, 0.5, 0.8, 0.95, etc. Of course, this application is not limited to this; in some other embodiments, the preset forgetting parameter can also be other values, such as 0.96, 0.39, etc.

[0069] In semiconductor process equipment, such as chemical vapor deposition (CVD) equipment, plasma-enhanced CVD equipment, atomic layer deposition (ALD) equipment, plasma-enhanced ALD equipment, or other etching and deposition equipment, cleaning the internal chambers is a necessary operation to ensure cleanliness. Consequently, the cleaning time is crucial for semiconductor manufacturing processes and throughput.

[0070] Accurately controlling the cleaning progress and duration during process chamber cleaning is crucial for improving semiconductor fabrication efficiency and product quality. If the cleaning time is too short, incomplete cleaning will result in the accumulation of reaction products and byproducts within the chamber, leading to defects, particularly excessive particle counts caused by inadequate cleaning, which reduces wafer yield. Conversely, excessive cleaning time can damage components or increase the average wafer production time by consuming too much time in the process, wasting resources such as air, water, and electricity, and increasing manufacturing costs. Therefore, effectively controlling cleaning time to ensure a suitable fabrication environment for semiconductors is a critical issue that needs to be addressed by those skilled in the art.

[0071] To address the aforementioned technical problems, embodiments of this application also provide a cleaning control method. This method can be applied to semiconductor process equipment, which includes a process chamber and an endpoint detection device, as shown in FIG2. The cleaning control method may include at least the following steps:

[0072] S201: Perform the first plasma cleaning process.

[0073] In practice, various cleaning chemicals can be used to generate clean plasma. Materials that generate clean plasma can include fluorine-containing materials, chlorine-containing materials, oxygen-containing materials, etc. The plasma cleaning process can utilize in-situ generated plasma or remotely generated plasma. Plasma generation technologies can be found in existing related technologies (such as inductive coupling, capacitive coupling, or thermal plasma generation technologies), and will not be elaborated upon here.

[0074] Specifically, during the first plasma cleaning process, NF3 (nitrogen trifluoride) can be used to form fluorine radicals, which react with silicides and other deposits in the process chamber to form gaseous SiF4 (silicon tetrafluoride). As plasma continuously enters the process chamber, the gas in the process chamber is also discharged. That is, the gas containing SiF4 is continuously discharged from the process chamber, thereby achieving the cleaning of the deposits in the process chamber.

[0075] In semiconductor process equipment, an endpoint detection device is installed in the exhaust path to detect the exhaust gas. This endpoint detection device can employ infrared spectroscopy or, alternatively, be connected to a residual gas analyzer and use optical emission spectroscopy to detect the exhaust gas.

[0076] In practice, the first plasma cleaning process can be a rapid cleaning process. Its main objective is to clean the base and the area near the gas outlet within the process chamber. These areas are the primary locations where deposition occurs; therefore, the deposited film requiring cleaning is relatively thick, and a high degree of cleaning is necessary. During this process, the cleaning speed is fast, the chemical reaction rate varies significantly, and correspondingly, the output value of the endpoint detection device is also large.

[0077] S202: Obtain the current curve of the clean output gas from the endpoint detection device, and smooth the current curve based on the gas detection curve smoothing method to obtain the previous estimate and the current estimate corresponding to the previous output value and the current output value, respectively.

[0078] The current curve includes all output values ​​between the first output value detected by the endpoint detection device and the current output value. The smoothing method for the gas detection curve is the same as that described in any of the above embodiments. For details on its implementation, please refer to the implementation method of the gas detection curve smoothing method described in any of the above embodiments; it will not be repeated here.

[0079] Specifically, the first output value, the previous output value, and the current output value of the endpoint detection device can be determined by the current curve of the clean output gas. Based on the smoothing method of the gas detection curve mentioned above, the previous estimated value and the current estimated value corresponding to the previous output value and the current output value are determined respectively. Among them, the previous output value is the output value that is closest to the current output value in terms of output time among the multiple consecutive output values ​​of the endpoint detection device.

[0080] During the execution of the first plasma cleaning process, the previous output value and the current output value of the endpoint detection device can be obtained. The previous output value and the current output value are two consecutive output values.

[0081] S203: Determine whether the previous estimate and the current estimate meet the first preset condition; the first preset condition includes: the previous estimate is greater than the preset process conversion value, and the current estimate is less than the preset process conversion value.

[0082] The first preset condition is the condition for determining whether to switch cleaning processes. If the previous estimate and the current estimate meet the first preset condition, then continue to execute the following step S204; if the previous estimate and the current estimate do not meet the first preset condition, then return to execute step S202 until the obtained previous estimate and the current estimate meet the first preset condition.

[0083] At the initial stage of the first plasma cleaning process, the deposited film to be cleaned covers the entire interior of the process chamber, resulting in a large area exposed to the plasma. Consequently, a large mass of film is removed per unit time through chemical reaction, and a large amount of gaseous chemical reaction products are generated. As shown in Figure 3, in a coordinate axis where the horizontal axis represents time t and the vertical axis represents the output / estimated value, the output / estimated value of the endpoint detection device is distributed as a curve on the axis. In the early stage of the first plasma cleaning process, because the chemical reaction within the process chamber requires time, the output curve (black curve S1 / gray curve S2) on the coordinate axis initially appears flat, which can be called the flat region. As the chemical reaction products are output, the output curve shows a rapid upward trend. As the chemical reaction continues within the process chamber, a considerable area of ​​the deposited film is cleaned, and the amount of gaseous chemical reaction products gradually decreases, causing the output curve to show a downward trend. Therefore, the preset process conversion value can be selected from the downward edge of the output curve.

[0084] The preset process conversion value can be determined manually through multiple tests, that is, based on actual needs. Specifically, cleaning process experiments can be conducted on process chambers with different deposition thicknesses, the time required to clean to the required level can be recorded, and the corresponding output value can be derived in reverse. The value that is less than the previous estimate and greater than the current estimate is selected from the falling edge of the output curve as the preset process conversion value.

[0085] In practical applications, for semiconductor process equipment of the same model, when the fabrication process and cleaning process are the same, the same preset process conversion value can be used.

[0086] S204: Perform the second plasma cleaning process.

[0087] It is important to understand that the second plasma cleaning process uses a different formulation than the first plasma cleaning process. After the first plasma cleaning process has cleaned most of the process chamber, specifically the area around the base and outlet, the second plasma cleaning process can be used to continue cleaning the chamber. This process also cleans the corners and edges of the process chamber that are further away from the outlet and base, ensuring comprehensive cleaning and improving the cleanliness level.

[0088] In the embodiments of this application, a first plasma cleaning process is first executed, and then the current curve of the clean output gas output by the endpoint detection device is obtained. The current curve includes all output values ​​between the first output value detected by the endpoint detection device and the current output value. The current curve is smoothed based on the gas detection curve smoothing method described in any of the above embodiments to obtain the previous estimated value and the current estimated value corresponding to the previous output value and the current output value, respectively. Then, it is determined whether the previous estimated value and the current estimated value meet the first preset condition. If the previous estimated value and the current estimated value meet the first preset condition, the second plasma cleaning process is executed. In this way, using the filtered value as the basis for determining whether to switch cleaning processes can effectively improve the accuracy of the determination. Moreover, compared with the traditional determination of cleaning progress, since it does not require a large amount of data accumulation, the determination data based on this application is less, which greatly reduces the amount of computation and can further reduce the time delay in the control process, improve the control efficiency of cleaning, and thus achieve more accurate cleaning process conversion. While improving the control of cleanliness, it also ensures the safety of the process chamber and provides a better preparation environment for semiconductor processes.

[0089] In some embodiments, after performing the second plasma cleaning process as described above, as shown in FIG4, the cleaning control method may further include the following implementation steps:

[0090] S401: Detect whether the process has reached the preset detection point; the preset detection point is the time point at which the difference between the current estimated value and the previous estimated value for the first preset number of consecutive tests is less than a first threshold, and the difference between the current estimated value and the expected threshold for the first preset number of consecutive tests is less than the first preset threshold.

[0091] During implementation, as shown in Figure 3, as the second plasma cleaning process continues, the amount of chemical reaction product gas gradually decreases, such as during the 502-503 period, when the cleaning is nearing completion. The preset detection point 504 can be considered the point at which the second plasma cleaning process can end. However, to avoid residual deposits or chemical reaction product gases, the second plasma cleaning process is not immediately terminated when the process reaches the preset detection point. Instead, it enters an extended cleaning period, such as the 504-505 period, to ensure the integrity of the cleaning process.

[0092] When determining the preset detection point, the first aspect is to check whether the difference between the current estimated value and the previous estimated value is less than a first threshold; the second aspect is to check whether the difference between the current estimated value and the expected threshold is less than a first preset threshold. The first aspect can be regarded as the average value criterion, and the second aspect can be regarded as the Cauchy criterion. The preset detection point can be determined by judging the two aspects a preset number of times. For example, as shown in Figure 3, the first time point that meets both aspects is 503. When all points in the preset number of times meet both aspects, that is, all points between 503 and 504 meet both aspects, then 504 can be determined as the preset detection point. In this way, the accuracy of the judgment can be improved, and the delay can be reduced due to the smaller amount of data, thereby improving the accuracy of cleaning control. Thus, while ensuring the safety of the process chamber, production capacity can also be taken into account.

[0093] The first threshold and the preset number of iterations can both be set according to actual needs, and no specific limitations are made here. The expected threshold is the average value of the output curve in the flat region, which can be determined experimentally or set according to actual needs, and no specific limitations are made here.

[0094] It should be noted that, due to the different models of endpoint detection devices, the detection principles are different. When no observed gas passes through, the output value / estimated value in its flat area, such as the area to the left of point 501 or the area near 504 in Figure 3, may be close to a certain value rather than zero. Accordingly, the expected threshold is a non-zero value.

[0095] S402: If the process reaches the preset detection point, the time when the process reaches the preset detection point is recorded as the first time point.

[0096] If the process reaches the preset detection point, it means that the process has entered the extended period. Then the first time point (504 in Figure 3) can be recorded, which is the time point when the second plasma cleaning process can end, thus providing a basis for determining the extended duration.

[0097] S403: Obtain the extended duration and determine the second time point based on the first time point and the extended duration.

[0098] The extended duration is the duration of the extended process period, which is the time between the point when the second plasma cleaning process can end and the point when the second plasma cleaning process is actually to end (Figure 3, 504-505).

[0099] When determining the second time point based on the first time point and the extended duration, the extended duration can be added to the first time point to obtain the second time point (Figure 3, 505).

[0100] S404: If the process reaches the second time point, the second plasma cleaning process shall be stopped.

[0101] When the process reaches the second time point, it means that the process has reached the actual end time of the second plasma cleaning process, and the second plasma cleaning process can be stopped. In this way, the cleaning of the process chamber of the semiconductor process equipment is completed, providing a better preparation environment for subsequent semiconductor processes.

[0102] In this embodiment, two cleaning processes, a first plasma cleaning process and a second plasma cleaning process, were used to clean the process chamber of the semiconductor process equipment at different time periods. This achieved phased cleaning of different locations within the process chamber, thereby ensuring the comprehensiveness of the cleaning process chamber, improving the cleanliness, ensuring the safety of the process chamber, and providing a guarantee for improving semiconductor fabrication efficiency and product quality.

[0103] In some implementations, when obtaining the extended duration, one of the calculated duration, the input duration, and the preset duration can be used as the extended duration.

[0104] Specifically, when obtaining the extended duration, the calculated duration can be used as the extended duration. The calculated duration is determined based on the preset cleaning parameters and the first cleaning duration. The first cleaning duration is determined based on the third time point and the first time point. The third time point is the time point when the difference between the current estimated value and the expected threshold is first detected to be greater than the second preset threshold during the execution of the first plasma cleaning process.

[0105] The third time point can be considered as the rising point of the output curve during the first plasma cleaning process (as shown in Figure 3, 501). After the first plasma cleaning process begins, cleaning gas is introduced into the process chamber, and the endpoint detection device starts working. Initially, the chemical reaction in the process chamber requires time, so the early curve of the output curve is in a relatively stable and low state (i.e., the early curve is in the aforementioned flat region). After the chemical reaction occurs in the process chamber and the gas of the chemical reaction product begins to pass through the endpoint detection device, the stability of the output curve is broken, and it begins to rise sharply. The time point before the rise is the third time point.

[0106] If the difference between the current estimated value and the expected threshold is greater than the second preset threshold, it indicates that there is a large difference between the current estimated value and the expected value of the flat area. In other words, the current estimated value has changed significantly and has improved considerably. This indicates that a chemical reaction has occurred in the process chamber and gaseous products of the chemical reaction have been produced. Therefore, the time point at which the current estimated value is located is the third time point.

[0107] In practice, the duration between the first and third time points can be defined as the first cleaning duration. Multiplying this first cleaning duration by preset cleaning parameters yields the extended duration. By using the start time of the chemical reaction (the third time point) and the expected end time of the chemical reaction (the first time point) to determine the extended duration, the later the output curve declines, the longer the extended duration becomes, thus ensuring sufficient cleaning time and maintaining cleanliness.

[0108] The second preset threshold and preset cleaning parameters can be set according to actual needs, and no specific limitations are made here. For example, the second preset threshold can be the same as the first preset threshold, or the second preset threshold can be different from the first preset threshold.

[0109] For example, the preset cleaning parameter can be 0, which means the extension time is 0, and the second plasma cleaning process is not extended; or, the preset cleaning parameter can be 0.5, in which case half of the first cleaning time can be determined as the extension time after the first cleaning time is determined; or, the preset cleaning parameter can be 1, in which case the first cleaning time can also be determined as the extension time after the first cleaning time is determined, and so on.

[0110] When obtaining the extended duration, the input duration can also be used as the extended duration, where the input duration includes the duration provided by the user based on the interactive interface.

[0111] In this way, the duration provided by the user based on the interactive interface can be determined as the extended duration, which can more flexibly meet the different extension needs of different users and improve the convenience of cleaning control.

[0112] When obtaining the extended duration, a preset duration can also be used as the extended duration, which includes the extended duration corresponding to the model of the semiconductor process equipment.

[0113] In this way, multiple durations corresponding to the models of semiconductor process equipment can be pre-built. Based on this, when obtaining the extended duration, the model of the semiconductor process equipment can be obtained first, and then the corresponding duration can be determined as the preset duration based on the model of the semiconductor process equipment.

[0114] In some embodiments, the semiconductor process equipment may further include a vacuum line connected to the process chamber and a detection line connected in parallel with the vacuum line; the endpoint detection device is located inside the detection line.

[0115] Specifically, as shown in Figure 5, plasma is generated by a remote plasma generator 101 and enters the process chamber 103 through the inlet pipe 102. In the process chamber 103, the plasma reacts with the deposits inside, generating gas. Using a vacuum system, the gas after the reaction is complete can be discharged from the process chamber 103 through vacuum pipes 104, 105, 106, and 107 corresponding to multiple process locations below the chamber, and then discharged through the upstream vacuum pipe 109. An endpoint detection device 108 is installed in the detection pipe 110, connected in parallel with the upstream vacuum pipe 109. A valve is installed between the detection pipe 110 and the upstream vacuum pipe 109. When the valve opens, the detection pipe 110 is open, and some of the gas after the reaction completes flows through it, causing a change in the output value of the endpoint detection device 108. In this way, the output value can be obtained while protecting the endpoint detection device and preventing overuse caused by prolonged operation.

[0116] It should be noted that the embodiments of this application are only illustrated by taking the parallel connection of the detection pipeline 110 and the front vacuum pipeline 109 as an example. However, this application is not limited to this. The cleaning rates in multiple process positions in the process chamber 103 may be different. The detection of a single outflow may indicate the defective cleaning process transition point and the cleaning process stop point. Therefore, in some other embodiments, the detection pipelines with the endpoint detection device 108 can also be installed in parallel on the vacuum pipelines 104, 105, 106 and / or 107 below the process position.

[0117] When performing the first plasma cleaning process, process gas can be introduced into the process chamber based on the first process formula, and the detection pipeline where the endpoint detection device is located can be controlled to be in a conductive state so that the gas discharged from the process chamber through the vacuum pipeline passes through the detection pipeline.

[0118] The process formulation includes the amount of plasma introduced and the gas pressure.

[0119] Similarly, when performing the second plasma cleaning process, the first process formulation can be switched to the second process formulation to introduce process gas into the process chamber based on the second process formulation; the first process formulation and the second process formulation are different process formulations.

[0120] By switching between the first and second process formulations, the switching between the first and second plasma cleaning processes was achieved, ensuring comprehensive cleaning of the process chamber and laying the foundation for a favorable preparation environment.

[0121] Furthermore, after stopping the second plasma cleaning process, the cleaning control method may also include keeping the detection pipeline containing the endpoint detection device in a closed state. Thus, ensuring the detection pipeline is open during the cleaning process and closed after the cleaning process is completed better protects the endpoint detection device located in the detection pipeline and extends its service life.

[0122] In some implementations, when determining the corresponding previous estimate and current estimate based on the previous output value and the current output value, the first output value of the endpoint detection device can be obtained first; then, based on the first output value, the previous output value and the preset forgetting parameter, the corresponding previous estimate can be determined; and then, based on the current output value, the previous estimate and the preset forgetting parameter, the corresponding current estimate can be determined.

[0123] During implementation, the endpoint detection device starts working. The first value output by the endpoint detection device is used as the current output value. When the second value is obtained, the first value is used as the previous output value and also as the previous estimated value. The second value is used as the current output value. At this point, the previous estimated value is multiplied by a preset forgetting parameter to obtain a partial previous estimated value. Subtracting the preset forgetting parameter from 1 and then multiplying by the current output value yields a partial current output value. Adding the partial previous estimated value to the partial current output value gives the current estimated value. In other words, the current estimated value = previous estimated value × preset forgetting parameter + (1 - preset forgetting parameter) × current output value. Thus, each time a new output value is obtained, i.e., the current output value and the previous estimated value are obtained, the current estimated value can be calculated.

[0124] Specifically, obtaining the previous and current estimated values ​​is the process of filtering the previous and current output values. As mentioned above, a low-pass filter can be used to process the actual output value, thereby filtering out high-frequency signals. In practice, an exponential smoothing method with less computation and fewer settings can be used to implement filtering. The preset forgetting parameter is the smoothing factor.

[0125] Taking Figure 3 as an example, the black curve S1 is the curve drawn based on the output value, and the gray curve S2 is the curve obtained after filtering the black curve S1 (drawn based on the estimated value). It is clear from the figure that the black curve S1 is tortuous and fluctuates significantly, making it difficult to reflect the current true state. Especially in the descending region where judgment is needed, subsequent output values ​​may be significantly higher than previous output values. Furthermore, excessive fluctuations may also occur in the flat region at the bottom. In such cases, directly using the output value of the endpoint detection device for judgment can easily lead to errors, resulting in inaccurate cleaning control. In contrast, the filtered gray curve S2 presents a smooth waveform. It can be seen that the fluctuations in the descending region and the flat region at the bottom, two key areas involving judgment, are significantly reduced. Therefore, using estimated values ​​to judge the process progress can make the judgment results more accurate and reliable, thereby achieving more precise cleaning control.

[0126] Due to the influence of different semiconductor process equipment models, different manufacturing processes, and different cleaning processes, the preset forgetting parameters can be set according to actual needs.

[0127] For example, the range of the preset forgetting parameter can include [0.4 to 0.95].

[0128] Specifically, the preset forgetting parameter can be 0.4, 0.6, 0.7, 0.9, etc. Of course, this application is not limited to this; in some other embodiments, the preset forgetting parameter can also be other values, such as 0.97, 0.38, etc.

[0129] In practical applications, based on experiments, the correspondence between the model of semiconductor process equipment, the manufacturing process and the cleaning process and the preset forgetting parameters can be established in advance. This allows the preset forgetting parameters used in the cleaning control process to achieve better filtering effects, thereby further improving the accuracy and efficiency of cleaning control and providing a guarantee for improving the manufacturing efficiency and product quality of semiconductors.

[0130] As another embodiment of the disclosure of this application, an embodiment of this application also provides a gas detection curve smoothing device, which may include: an acquisition module, used to acquire the curve of clean output gas output by the endpoint detection device; the curve of clean output gas includes all clean output values ​​between the first clean output value detected by the endpoint detection device and the current clean output value; and a smoothing processing module, used to use the first clean output value as the first clean estimate value, and based on a preset forgetting parameter, to smooth the curve of clean output gas to obtain a clean estimate value corresponding to each clean output value.

[0131] In some embodiments, when smoothing the curve of the clean output gas to obtain a clean estimate corresponding to each clean output value, the smoothing module can specifically be used to: calculate the current clean estimate corresponding to the current clean output value based on the first clean estimate, the current clean output value, and a preset forgetting parameter; the calculation process of the current clean estimate includes: multiplying the previous clean estimate by the preset forgetting parameter to obtain a partial previous clean estimate; subtracting the preset forgetting parameter from 1 and then multiplying it by the current clean output value to obtain a partial current clean output value; and summing the partial previous clean estimate and the partial current clean output value to obtain the current clean estimate. In other words, the current estimate = the previous estimate × the preset forgetting parameter + (1 - the preset forgetting parameter) × the current output value.

[0132] In some embodiments, the range of the preset forgetting parameter includes [0.4 to 0.95].

[0133] Specific limitations regarding the gas detection curve smoothing device can be found in the limitations regarding the gas detection curve smoothing method described above, and will not be repeated here. Each module in the aforementioned gas detection curve smoothing device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device in hardware form, or stored in the memory of a computer device in software form, so that the processor can call and execute the corresponding operations of each module.

[0134] As another embodiment of the disclosure of this application, an embodiment of this application also provides a cleaning control device applied to semiconductor process equipment, the semiconductor process equipment including a process chamber and an endpoint detection device; the cleaning control device may include at least: a first execution module for executing a first plasma cleaning process; an acquisition and determination module for acquiring the current curve of the clean output gas output by the endpoint detection device, the current curve including all output values ​​between the first output value detected by the endpoint detection device and the current output value; smoothing the current curve based on the gas detection curve smoothing method as described in any of the above embodiments to obtain a previous estimate and a current estimate corresponding to the previous output value and the current output value, respectively; a judgment module for judging whether the previous estimate and the current estimate satisfy a first preset condition; the first preset condition includes: the previous estimate is greater than a preset process conversion value, and the current estimate is less than the preset process conversion value; a second execution module for executing a second plasma cleaning process if the previous estimate and the current estimate satisfy the first preset condition.

[0135] In some embodiments, the cleaning control module may further include a control module. After executing the second plasma cleaning process, the control module may be used to: detect whether the process progress has reached a preset detection point; the preset detection point is the time point at which the difference between the current estimated value and the previous estimated value for the first consecutive preset number of times is less than a first threshold, and the difference between the current estimated value and the expected threshold for the first consecutive preset number of times is less than the first preset threshold; if the process progress reaches the preset detection point, the time when the process progress reaches the preset detection point is recorded as a first time point; the extended duration is obtained, and a second time point is determined based on the first time point and the extended duration; if the process progress reaches the second time point, the second plasma cleaning process is stopped.

[0136] In some embodiments, when obtaining the extended duration, the control module may specifically be used to: use one of the calculated duration, the input duration, and the preset duration as the extended duration; the calculated duration is determined based on preset cleaning parameters and a first cleaning duration, the first cleaning duration is determined based on a third time point and a first time point, the third time point being the time point when the difference between the current estimated value and the expected threshold is first detected to be greater than a second preset threshold during the execution of the first plasma cleaning process; the input duration includes the duration provided by the user based on the interactive interface; the preset duration includes the duration corresponding to the model of the semiconductor process equipment.

[0137] In some embodiments, the semiconductor process equipment further includes a vacuum line connected to the process chamber and a detection line connected in parallel with the vacuum line; the endpoint detection device is located inside the detection line; when performing the first plasma cleaning process, the first execution module may be specifically used to: introduce process gas into the process chamber based on the first process recipe, and control the detection line where the endpoint detection device is located to be in a conducting state so that the gas discharged from the process chamber through the vacuum line passes through the detection line.

[0138] In some embodiments, the second execution module may be specifically used to: switch the first process formulation to the second process formulation, so as to introduce process gas into the process chamber based on the second process formulation; the first process formulation and the second process formulation are different process formulations.

[0139] In some embodiments, after the second plasma cleaning process is stopped, the control module can also be used to: control the detection pipeline where the endpoint detection device is located to be in a closed state.

[0140] Specific limitations regarding the cleaning control device can be found in the limitations regarding the cleaning control method above, and will not be repeated here. Each module in the aforementioned cleaning control device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device in hardware form, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0141] As another embodiment of the disclosure of this application, an embodiment of this application also provides an electronic device, which may include a processor and a memory connected to the processor; the memory is used to store a computer program; the processor is used to call and execute the computer program in the memory to perform the gas detection curve smoothing method as described in any of the above embodiments, and / or the cleaning control method as described in any of the above embodiments.

[0142] As another embodiment of the disclosure of this application, the embodiments of this application also provide a semiconductor process apparatus, as shown in FIG6. The semiconductor process apparatus 100 may include: an electronic device 30 and a controlled module 40 as described in any of the above embodiments.

[0143] The controlled module 40 may include a first robotic arm 10, a wafer loading / unloading position 21, a calibration module 22, a cooling plate 23, and multiple process chambers 103. Each process chamber 103 includes four process positions.

[0144] The controlled module 40 may also include a plasma generator, an endpoint detection device, vacuum pipelines connected to the process positions in the process chamber 103 respectively, and a detection pipeline connected in parallel with the vacuum pipelines; the endpoint detection device is located inside the detection pipeline.

[0145] Electronic device 30 is configured to perform cleaning process control at various process locations in process chamber 103 based on plasma generator and endpoint detection device.

[0146] In some embodiments, the electronic device 30 is, for example, the host computer of the semiconductor process equipment 100. This specification does not limit this, and it depends on the actual situation.

[0147] As another embodiment of the disclosure of this application, another embodiment of this application also proposes a computing device. Referring to FIG7, the computing device may include: a memory and a processor. The memory stores a computer program, and the processor executes the computer program to perform the steps in the gas detection curve smoothing method and / or cleaning control method according to various embodiments of this specification described in the above embodiments of this application.

[0148] The internal structure of the computing device is shown in Figure 7. The computing device includes a processor, memory, network interface, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it follows the steps of the gas detection curve smoothing method and / or cleaning control method according to the various embodiments of this specification described in the above embodiments.

[0149] The processor may include the main processor, as well as baseband chips, modems, etc.

[0150] The memory stores a program that executes the technical solution of this invention, and may also store an operating system and other critical business functions. Specifically, the program may include program code, which includes computer operation instructions. More specifically, the memory may include read-only memory (ROM), other types of static storage devices capable of storing static information and instructions, random access memory (RAM), other types of dynamic storage devices capable of storing information and instructions, disk storage, flash memory, etc.

[0151] The processor can be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits used to control the execution of the program of the present invention. It can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0152] Input devices may include devices that receive data and information input by the user, such as keyboards, mice, cameras, scanners, light pens, voice input devices, touch screens, pedometers, or gravity sensors.

[0153] Output devices may include devices that allow information to be output to the user, such as displays, printers, speakers, etc.

[0154] The communication interface may include any transceiver-like device for communicating with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0155] The processor executes the program stored in the memory and calls other devices, which can be used to implement the various steps of any of the gas detection curve smoothing methods and / or cleaning control methods provided in the above embodiments of this application.

[0156] The computing device may also include a display component and a voice component. The display component may be a liquid crystal display screen or an e-ink display screen. The input device of the computing device may be a touch layer covering the display component, or a button, trackball or touchpad set on the casing of the computing device, or an external keyboard, touchpad or mouse, etc.

[0157] Those skilled in the art will understand that the structure shown in Figure 7 is merely a block diagram of a portion of the structure related to the scheme described in this specification, and does not constitute a limitation on the computing device to which the scheme described in this specification is applied. A specific computing device may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0158] In addition to the methods and devices described above, the gas detection curve smoothing method and / or cleaning control method provided in the embodiments of this specification can also be a computer program product, which includes computer program instructions that, when executed by a processor, cause the processor to perform the steps in the gas detection curve smoothing method and / or cleaning control method according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0159] The computer program product described herein can be written in any combination of one or more programming languages ​​to perform the operations of the embodiments described herein. These programming languages ​​include object-oriented programming languages ​​such as Java and C++, as well as conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0160] Furthermore, embodiments of this specification also provide a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor of the steps in the gas detection curve smoothing method and / or cleaning control method according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0161] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this specification can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0162] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0163] The embodiments described above are merely illustrative of several implementation methods outlined in this specification. While the descriptions are specific and detailed, they should not be construed as limiting the scope of the solutions provided in this specification. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this specification, and these all fall within the scope of protection of this specification. Therefore, the scope of protection for this patent should be determined by the appended claims.

Claims

1. A method for smoothing a gas detection curve, characterized in that, include: Obtain the curve of the clean output gas output by the endpoint detection device; the curve of the clean output gas includes all clean output values ​​between the first clean output value detected by the endpoint detection device and the current clean output value; Using the first clean output value as the first clean estimate, the curve of the clean output gas is smoothed based on a preset forgetting parameter to obtain the clean estimate corresponding to each of the clean output values.

2. The method according to claim 1, characterized in that, The smoothing process for the curve of the clean output gas to obtain the cleanliness estimate corresponding to each clean output value includes: Based on the first cleaning estimate, the current cleaning output value, and the preset forgetting parameter, the current cleaning estimate corresponding to the current cleaning output value is calculated; The calculation process for the current cleanliness estimate includes: By multiplying the previous cleaning estimate by a preset forgetting parameter, a partial previous cleaning estimate is obtained; by subtracting the preset forgetting parameter from 1 and then multiplying it by the current cleaning output value, a partial current cleaning output value is obtained. The previous cleaning estimate and the current cleaning output value of the aforementioned portion are summed to obtain the current cleaning estimate.

3. The method according to claim 1, characterized in that, The range of the preset forgetting parameter includes [0.4 to 0.95].

4. A cleaning control method, characterized in that, The method is applied to semiconductor process equipment, which includes a process chamber and an endpoint detection device; the method includes: Perform the first plasma cleaning process; Obtain the current curve of the clean output gas from the endpoint detection device, the current curve including all output values ​​between the first output value detected by the endpoint detection device and the current output value; smooth the current curve based on the gas detection curve smoothing method as described in any one of claims 1-3 to obtain the previous estimated value and the current estimated value corresponding to the previous output value and the current output value, respectively. Determine whether the previous estimated value and the current estimated value satisfy a first preset condition; the first preset condition includes: the previous estimated value is greater than a preset process conversion value, and the current estimated value is less than the preset process conversion value; If the previous estimate and the current estimate satisfy the first preset condition, then the second plasma cleaning process is executed.

5. The method according to claim 4, characterized in that, After performing the second plasma cleaning process, the method further includes: The detection process is checked to see if it has reached a preset detection point. The preset detection point is the time point at which the difference between the current estimated value and the previous estimated value is less than a first threshold for the first time, and the difference between the current estimated value and the expected threshold is less than the first preset threshold for the first time. If the process reaches the preset detection point, the time when the process reaches the preset detection point is recorded as the first time point; Obtain the extended duration, and determine the second time point based on the first time point and the extended duration; If the process reaches the second time point, the second plasma cleaning process is stopped.

6. The method according to claim 5, characterized in that, The process of obtaining the extended duration includes: The extended duration is determined by one of the calculation duration, the input duration, and the preset duration. The calculation time is determined based on preset cleaning parameters and a first cleaning time. The first cleaning time is determined based on a third time point and the first time point. The third time point is the time point when the difference between the current estimated value and the expected threshold is first detected to be greater than a second preset threshold during the execution of the first plasma cleaning process. The input duration includes the duration provided by the user based on the interactive interface; The preset duration includes the duration corresponding to the model of the semiconductor process equipment.

7. The method according to claim 5, characterized in that, The semiconductor process equipment also includes a vacuum line connected to the process chamber and a detection line connected in parallel with the vacuum line; The endpoint detection device is located inside the detection pipeline; The execution of the first plasma cleaning process includes: Based on the first process formulation, process gas is introduced into the process chamber, and the detection pipeline where the endpoint detection device is located is controlled to be in a conductive state, so that the gas discharged from the process chamber through the vacuum pipeline passes through the detection pipeline.

8. The method according to claim 7, characterized in that, The execution of the second plasma cleaning process includes: The first process formulation is switched to the second process formulation, and process gas is introduced into the process chamber based on the second process formulation; the first process formulation and the second process formulation are different process formulations.

9. The method according to claim 7, characterized in that, After stopping the second plasma cleaning process, the method further includes: The detection pipeline where the endpoint detection device is located is kept in a closed state.

10. An electronic device, characterized in that, include: A processor, and a memory connected to the processor; The memory is used to store computer programs; The processor is used to call and execute the computer program in the memory to perform the gas detection curve smoothing method as described in any one of claims 1-3, and / or the cleaning control method as described in any one of claims 4-9.

11. A semiconductor process apparatus, characterized in that, It includes a process chamber, an endpoint detection device, and the electronic equipment as described in claim 10.

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