Substrate cleaning device and substrate cleaning method

Abstract

Provided in the present application are a substrate cleaning device and a substrate cleaning method. The substrate cleaning device comprises a tank-type cleaning module, a single-substrate cleaning module and a transfer module, wherein the tank-type cleaning module comprises a first tank configured to accommodate an SPM solution so as to treat one or more substrates, and a second tank configured to accommodate an SC1 solution so as to treat the one or more substrates; and the single-substrate cleaning module has at least one single-substrate cleaning cavity, the single-substrate cleaning cavity is configured to execute a single-substrate cleaning process, and the single-substrate cleaning process includes an SC1 treatment process. By means of the substrate cleaning device of the present application, the substrates are thinned in batches by means of the SC1 solution in the tank-type cleaning module, and single-substrate thinning is then performed by means of the single-substrate cleaning module, thereby effectively shortening the overall process time and improving the output per unit time; and the time of the single-substrate cleaning process can also be effectively shortened, thereby preventing the substrates from residing in the single-substrate cleaning cavity for an excessively long time, reducing the amount of particles attached to the surfaces of the substrates, and enhancing the substrate cleaning effect.

Description

Substrate cleaning apparatus and substrate cleaning method Technical Field

[0001] This application relates to the field of semiconductor cleaning, and in particular to a substrate cleaning apparatus and a substrate cleaning method. Background Technology

[0002] Traditionally, organic photoresist removal processes employ a combination of dry and wet methods. However, dry processing based on active plasma ashing has encountered several problems, such as plasma-induced damage, photoresist cracking, incomplete photoresist removal, and byproduct redeposition. Therefore, subsequent wet stripping / cleaning is necessary. Currently, wet stripping processes based on organic solvents and corrosive acidic chemicals, such as sulfuric acid-hydrogen peroxide mixtures (SPM), have been developed. SPM is now widely used in photoresist stripping and post-removal cleaning processes.

[0003] From the perspectives of removal efficiency and environmental protection, an integrated cleaning system and process method has emerged that combines a traditional tank-type SPM cleaning module and a single-substrate cleaning module into a single wet cleaning system. The substrate is cleaned with SPM solution in the tank-type cleaning module, then transported in a wet state to the single-substrate cleaning module, where its surface is treated with SC1 solution to remove organic matter and particles. However, the applicant has found in actual process that after the substrate is cleaned with SPM solution in the tank-type cleaning module, the hydrogen peroxide in the SPM solution can cause the formation of a new oxide film layer on the substrate surface, thereby increasing the thickness of the oxide film layer. When processed in the single-substrate cleaning module, if the single-substrate process time is short, the oxide film layer on the substrate surface cannot be etched and thinned to the specified thickness by the SC1 solution, resulting in an excessively thick oxide film layer; if the single-substrate process time is long, it increases the overall cleaning process time, leading to a low yield. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the purpose of this application is to propose a substrate cleaning apparatus and a substrate cleaning method to solve the problem of how to improve the substrate cleaning efficiency and improve the substrate yield in the prior art.

[0005] This application solves the above-mentioned technical problems through the following technical solution:

[0006] This application provides a substrate cleaning apparatus, comprising: a tank-type cleaning module, a single-wafer cleaning module, and a transfer module, wherein...

[0007] The tank cleaning module is configured to perform a tank cleaning process on one or more substrates, and the tank cleaning module includes:

[0008] The first tank is configured to contain the SPM solution;

[0009] The second tank is configured to contain the SC1 solution;

[0010] And a transmission component configured to transfer one or more of the substrates from the first tank to the second tank;

[0011] The single-wafer cleaning module has at least one single-wafer cleaning chamber, which is configured to perform a single-wafer substrate cleaning process, including an SC1 processing process.

[0012] The transfer module is configured to transfer the substrate between the tank cleaning module and the monolithic cleaning module.

[0013] This application also provides a substrate cleaning method, the substrate cleaning method comprising:

[0014] S1. Transfer one or more substrates to an SPM solution contained in a first tank to perform an SPM process.

[0015] S2. After the SPM process is completed, one or more of the substrates are transferred from the first tank to the second tank, which is used to contain the SC1 solution to perform the first SC1 process.

[0016] S3. One or more of the substrates are sequentially transferred to a single-piece cleaning chamber to perform the second SC1 processing process.

[0017] The positive and progressive effects of this application are as follows:

[0018] The substrate cleaning apparatus of this application achieves batch thinning by dissolving the oxide film layer of the substrate with an SC1 solution within a tank-type cleaning module, followed by single-wafer thinning using a single-wafer cleaning module. Firstly, this effectively shortens the overall process time and increases the output per unit time. Secondly, by combining batch thinning with single-wafer thinning, the single-wafer substrate cleaning process time is effectively shortened, avoiding prolonged placement of the substrate within the single-wafer cleaning chamber and minimizing prolonged exposure to the chamber's atmosphere, thus reducing particle adhesion on the substrate surface and enhancing the cleaning effect. Thirdly, the SC1 solution treatment within the tank-type cleaning module removes surface particles while simultaneously imbuing the substrate surface and the removed impurity particles with a negative charge, preventing particle re-adhesion during transfer from the tank-type cleaning module to the single-wafer cleaning module, further enhancing the cleaning effect. Fourthly, the thickness of the oxide film on the substrate surface during the etch-reduction process can be controlled by adjusting the mixing ratio of NH4OH, H2O2, and DIW in the SC1 solution, the temperature of the mixture, and the processing time of the SC1 solution. This allows the thickness of the oxide film on the substrate surface treated with the SC1 solution in the etch-reduction process to be compatible with the SC1 processing in the single-substrate cleaning chamber, thus ensuring that the oxide film thickness of the substrate surface after the single-substrate cleaning process meets the shipment thickness specifications. Furthermore, by controlling the thickness of the oxide film on the substrate surface during the etch-reduction process, it can be adapted to different SC1 processing in single-substrate cleaning processes, offering wide applicability and high flexibility.

[0019] Overview of the attached figures

[0020] Figure 1 is a schematic diagram of the substrate cleaning apparatus according to Embodiment 1 of this application.

[0021] Figure 2 is a structural schematic diagram of the second tank according to Embodiment 1 of this application.

[0022] Figure 3 is a schematic diagram of the substrate cleaning apparatus according to Embodiment 2 of this application.

[0023] Figure 4 is a process flow diagram according to Embodiment 3 of this application.

[0024] Preferred embodiments of this application

[0025] The present application is further illustrated below by way of embodiments, but this does not limit the present application to the scope of the following embodiments.

[0026] Example 1

[0027] Referring to Figure 1, this application embodiment provides a substrate cleaning apparatus, which includes a tank cleaning module 10, a single-substrate cleaning module 20, and a transfer module 30. The tank cleaning module 10 is configured to perform a tank cleaning process on one or more substrates, and includes a first tank 101, a second tank 102, and a transfer component (not shown). The first tank 101 is configured to contain an SPM solution to process one or more substrates, the second tank 102 is configured to contain an SC1 solution to process one or more substrates, and the transfer component is configured to transfer one or more substrates from the first tank 101 to the second tank 102. The single-substrate cleaning module 20 has at least one single-substrate cleaning chamber 201, which is configured to perform a single-substrate cleaning process, including an SC1 processing process. The transfer module 30 is configured to transfer substrates between the tank cleaning module 10 and the single-substrate cleaning module 20.

[0028] In this embodiment, within the tank cleaning module 10, the substrate is sequentially processed by an SPM solution in the first tank 101 and an SC1 solution in the second tank 102. In the first tank 101, the SPM solution removes photoresist or other residues from the substrate surface. In the second tank 102, the SC1 solution dissolves the oxide layer on the substrate surface, i.e., etches the oxide layer. This oxide layer includes the oxide layer newly formed during the photoresist removal process in the SPM solution. For example, process testing shows that after immersing the substrate in an SPM solution (H2SO4 to H2O2 mixing ratio of 6:1, mixture temperature 120°C) for 300 seconds, the thickness of the oxide layer on the surface increases by approximately [missing information]. This process achieves thinning of the oxide film layer on the substrate surface. On the other hand, the SC1 solution removes particles from the substrate surface, and in a weakly alkaline environment, negative charges are generated on the substrate surface and the impurity particles peeled off from the substrate, preventing particle re-adhesion and improving the substrate cleaning effect. The substrates processed by the tank cleaning process are sequentially transferred by the transfer module 30 to the single-piece cleaning chamber 201 for single-piece SC1 processing, further thinning the oxide film layer on the single-piece substrate surface and removing particles from the single-piece substrate surface.

[0029] In this embodiment, the substrate oxide film layer is dissolved in an SC1 solution within a tank cleaning module 10 for batch thinning, and then thinned individually in a single-wafer cleaning module 20 using the same SC1 solution. Firstly, this effectively shortens the overall process time and increases the output per unit time. Secondly, by combining batch thinning with single-wafer thinning, the cleaning time for a single substrate can be shortened, preventing the substrate from being placed in the single-wafer cleaning chamber 201 for too long, avoiding prolonged exposure to the atmosphere inside the chamber, reducing the amount of particles adhering to the substrate surface, and enhancing the substrate cleaning effect. Thirdly, the SC1 solution treatment in the tank cleaning module 10 removes surface particles while simultaneously imbuing the substrate surface and the impurity particles peeled off with a negative charge, preventing particle re-adhesion on the substrate surface during transfer from the tank cleaning module 10 to the single-wafer cleaning module 20, further enhancing the substrate cleaning effect. Fourthly, in the substrate cleaning process of this embodiment, the oxide film layer thickness on the substrate surface conforms to the following calculation formula: T = T 原始 +T SPM -T1-T2, where T: the shipment thickness of the oxide film layer on the substrate surface; T 原始 : Original oxide film thickness on the substrate surface; T SPM T1: The thickness of the oxide film layer newly added to the substrate in the SPM solution; T2: The thickness of the oxide film layer on the substrate surface removed by the SC1 solution in the tank cleaning process; T3: The thickness of the oxide film layer on the substrate surface removed by the SC1 treatment process in the single-substrate cleaning process. It can be seen that the thickness T1 of the oxide film layer on the substrate surface after etching and thinning by the SC1 solution in the tank cleaning process can be controlled by controlling the mixing ratio of NH4OH, H2O2, and DIW in the SC1 solution, the temperature of the mixture, and the processing time of the SC1 solution in the tank cleaning process. This allows the thickness of the oxide film layer on the substrate surface treated by the SC1 solution in the tank cleaning process to be adapted to the SC1 treatment process in the single-substrate cleaning chamber, thus ensuring that the thickness of the oxide film layer on the substrate surface after the single-substrate cleaning process meets the shipment thickness specifications. Furthermore, by controlling the thickness T1 of the oxide film layer on the substrate surface after etching and thinning in the tank cleaning process, it is possible to adapt to the SC1 treatment process in different single-substrate cleaning processes, offering a wide range of applications and high flexibility.

[0030] In this embodiment, the mixing ratio of NH4OH, H2O2, and DIW in the SC1 solution contained in the second tank 102 can be selected as 1:1:5, 1:1:10, 1:4:20, 1:2:50, 1:8:60, 1:1:100, or other ratios. The temperature of the mixture is RT (room temperature) to 65°C, and the SC1 solution processing time is 60s to 180s. It should be noted that the process conditions of the SC1 solution can be set according to the thickness of the oxide film layer on the substrate surface that needs to be removed by the SC1 solution in the tank cleaning process, based on the actual working conditions.

[0031] Process testing showed that after the substrate was treated with SC1 solution (NH4OH, H2O2, and DIW mixed in a 1:2:50 ratio at room temperature) for 120 seconds in a tank cleaning process, the thickness of the oxide film on the substrate surface decreased. In the subsequent single-substrate cleaning process, after the substrate is treated with SC1 process (NH4OH, H2O2 and DIW mixed in a ratio of 1:2:50, and the mixture temperature is 60℃) for 30 seconds, the thickness of the oxide film layer on the substrate surface is reduced.

[0032] In some embodiments, as shown in Figures 1 and 2, the second tank 102 is configured to sequentially contain HDIW (hot DIW), SC1 solution, and DIW. HDIW, SC1 solution, and DIW are sequentially introduced and discharged into the second tank 102. By using a single tank to perform the aforementioned process, the space occupied is effectively reduced, space utilization is improved, and the layout of other components within the substrate cleaning apparatus is facilitated. There is no need to transfer the substrate between different solutions using a robotic arm, saving substrate transfer time, effectively reducing process operation time, and increasing output per unit time. Furthermore, it can reduce or avoid the substrate surface drying during transfer, keeping the substrate surface moist, which is beneficial for particle removal.

[0033] In some embodiments, the second tank 102 adopts an overflow mode, which can effectively ensure the freshness and cleanliness of the solution and is beneficial for particle removal.

[0034] In some embodiments, as shown in FIG2, the substrate cleaning apparatus further includes a first inlet pipe 1021, a second inlet pipe 1022, and a third inlet pipe 1023. The second tank 102 has an inlet port 1024 and an outlet port 1025, and the first inlet pipe 1021, the second inlet pipe 1022, and the third inlet pipe 1023 are connected to the inlet port 1024. The first inlet pipe 1021 is used to introduce HDIW or DIW, the second inlet pipe 1022 is used to introduce NH4OH, and the third inlet pipe 1023 is used to introduce H2O2. SC1 solution is a mixture of NH4OH and H2O2 in DIW, also known as "Standard Cleaning Solution-1". DIW, NH4OH, and H2O2 enter the second tank 102 through the first inlet pipe 1021, the second inlet pipe 1022, and the third inlet pipe 1023, respectively. This allows for different ratios of NH4OH, H2O2, and DIW within the second tank 102 based on actual operating conditions, offering high flexibility and facilitating process expansion. When HDIW needs to be introduced into the second tank 102, HDIW is introduced through the first inlet pipe 1021, and the second and third inlet pipes 1022 and 1023 are disconnected. When SC1 solution needs to be introduced into the second tank 102, DIW, NH4OH, and H2O2 are introduced through the first, second, and third inlet pipes 1021 and 1023, respectively. When DIW needs to be introduced into the second tank 102, DIW is introduced through the first inlet pipe 1021, and the second and third inlet pipes 1022 and 1023 are disconnected.

[0035] In some embodiments, the output ends of the first inlet pipe 1021, the second inlet pipe 1022 and the third inlet pipe 1023 are respectively connected to the three inlet ends of the four-way valve, and the outlet end of the four-way valve is connected to the inlet port 1024.

[0036] In some embodiments, as shown in FIG2, the substrate cleaning apparatus further includes a first liquid storage tank 1027 and a second liquid storage tank 1028. The first liquid storage tank 1027 is used to contain NH4OH, and the inlet end of the second liquid inlet pipe 1022 is connected to the first liquid storage tank 1027. The second liquid storage tank 1028 is used to contain H2O2, and the inlet end of the third liquid inlet pipe 1023 is connected to the second liquid storage tank 1028. The interior of the second tank 102 is also provided with a spray element 1026 for rinsing the substrate 60. A drain port 1025 is opened in the middle of the bottom wall of the second tank 102, and four liquid inlets 1024 are also opened in the bottom wall of the second tank 102, with the four liquid inlets 1024 spaced evenly. It should be noted that the number and arrangement of the liquid inlets 1024 and the drain ports 1025 can be set according to actual needs.

[0037] In some embodiments, as shown in FIG1, the substrate cleaning apparatus includes a first tank 101 and two second tanks 102. The two second tanks 102 can operate simultaneously, avoiding the situation where the substrates processed in the first tank 101 need to wait for the substrates in the second tanks 102 to be processed before being placed into the second tanks 102, thus ensuring process continuity and saving process time.

[0038] In some embodiments, the tank cleaning module 10 further includes a moisturizing buffer (not shown) for keeping one or more substrates moist before they are transferred to the single-piece cleaning chamber 201.

[0039] In some embodiments, the tank cleaning module 10 further includes a loading port 40 and a front-end module robot 50. The loading port 40 is used to load one or more substrates, and the front-end module robot 50 is used to remove one or more substrates from the loading port 40 and transfer them to the next process.

[0040] Example 2

[0041] As shown in Figure 3, Embodiment 2 also provides a substrate cleaning apparatus. The difference between this embodiment and Embodiment 1 is that the second tank 102 is not used to sequentially contain HDIW, SC1 solution, and DIW. The tank-type cleaning module 10 in this embodiment includes a third tank 103, a fourth tank 104, a first transfer robot (not shown in the figure), and a second transfer robot (not shown in the figure). The third tank 103 is configured to contain HDIW for cleaning one or more substrates, and the fourth tank 104 is configured to contain DIW for cleaning one or more substrates. The first transfer robot is configured to transfer one or more substrates from the first tank 101 to the third tank 103, and the second transfer robot is configured to transfer one or more substrates from the third tank 103 to the second tank 102, and then transfer one or more substrates from the second tank 102 to the fourth tank 104. By setting the third tank 103, the second tank 102 and the fourth tank 104 to contain HDIW, SC1 solution and DIW respectively, the substrate processing solution sequence within the tank cleaning module 10 is corresponding to ensure the accuracy of the substrate processing solution sequence.

[0042] In some embodiments, the number of first slots 101 is one, and the third slot 103, the second slot 102 and the fourth slot 104 are set as a group, with a total of two groups.

[0043] In other embodiments, the first transfer robot and the second transfer robot may share the same one.

[0044] Example 3

[0045] As shown in Figure 4, this application embodiment also provides a substrate cleaning method, which includes:

[0046] S1. Transfer one or more substrates 60 to an SPM solution contained in a first tank 101 to perform an SPM process.

[0047] After the S2 and SPM processes are completed, one or more substrates 60 are transferred from the first tank 101 to the second tank 102. The second tank 102 is used to contain the SC1 solution for performing the first SC1 processing. In this embodiment, the mixing ratio of NH4OH, H2O2, and DIW in the SC1 solution contained in the second tank 102 can be selected as 1:1:5, 1:1:10, 1:4:20, 1:2:50, 1:8:60, 1:1:100, or other ratios. The temperature of the mixture is RT to 65°C, and the SC1 solution processing time is 60s to 180s. It should be noted that the process conditions of the SC1 solution can be set according to the actual operating conditions, based on the thickness of the oxide film layer on the substrate surface that needs to be removed by the SC1 solution during the tank cleaning process.

[0048] S3. One or more substrates 60 are sequentially transferred to the single-piece cleaning chamber 201 to perform the second SC1 processing process.

[0049] In other words, substrates 60 undergo batch SPM processing and the first SC1 processing, while multiple substrates 60 sequentially undergo the second SC1 processing. Firstly, this effectively shortens the overall process time and increases the output per unit time. Secondly, by combining batch thinning with single-substrate thinning, the cleaning time for a single substrate can be effectively shortened, preventing the substrate from being placed in the single-substrate cleaning chamber 201 for too long, avoiding prolonged exposure to the atmosphere inside the chamber, reducing the amount of particles adhering to the substrate surface, and enhancing the substrate cleaning effect. Thirdly, the substrate is treated with SC1 solution in the tank cleaning module 10, which, while removing particles from the substrate surface, also imparts a negative charge to the substrate surface and the impurity particles peeled off from the substrate. This prevents particles from re-adhering to the substrate surface during the transfer from the tank cleaning module 10 to the single-substrate cleaning module 20, further enhancing the substrate cleaning effect.

[0050] In some embodiments, in S2, an HDIW cleaning process is included before the first SC1 processing process. A DIW cleaning process is also included after the first SC1 processing process. In other words, the substrate 60 sequentially undergoes the HDIW cleaning process, the first SC1 processing process, and the DIW cleaning process in batches. The HDIW cleaning process removes residual SPM solution from the substrate surface; the first SC1 processing process is used to etch the oxide film layer on the surface of the substrate 60 and to remove particles from the surface of the substrate 60; the DIW cleaning process is used to replace the SC1 solution and clean the surface of the substrate 60. The HDIW cleaning process and the DIW cleaning process include fast flushing and overflow flushing.

[0051] In some embodiments, in S2, the step of "transferring one or more substrates 60 from the first tank 101 to the second tank 102, the second tank 102 being used to contain the SC1 solution" includes: injecting the SC1 solution into the second tank 102 to a preset height, and vertically placing one or more substrates 60 into the second tank 102 and completely immersing them in the SC1 solution. Vertically placing the substrates 60 into the second tank 102 containing the SC1 solution can effectively reduce the etching thickness difference between the upper and lower portions of the substrates 60, ensuring the etching uniformity of the substrates 60 in the vertical direction.

[0052] In some embodiments, a nozzle (not shown) is provided within the single-piece cleaning chamber 201. The nozzle is used to supply SC1 solution to the substrate to achieve a second SC1 processing process. The second SC1 processing process in S3 includes:

[0053] S31, drive the substrate to rotate;

[0054] S32. The nozzle moves along the radial direction of the substrate and sprays SC1 solution, wherein the moving speed of the nozzle corresponds to the thickness distribution of the oxide film layer on the substrate surface along the radial direction of the substrate.

[0055] Specifically, if the oxide film thickness is high in a certain area of ​​the substrate surface, the spraying time of the nozzle in that area is extended to ensure the etching uniformity of the substrate 60 along its radial direction. The substrates are processed in batches using the first SC1 process, and then individually using the second SC1 process to ensure etching uniformity in both the vertical and radial directions of the substrate 60, effectively guaranteeing the overall etching uniformity of the substrate 60. In the actual process, the oxide film thickness at multiple points on the substrate surface can be measured before the substrate enters the single-wafer cleaning chamber 201 to obtain the thickness distribution of the oxide film along the radial direction of the substrate.

[0056] In S3, after performing the second SC1 processing process, at least one DIW cleaning process and at least one substrate drying process are also included.

[0057] In other embodiments, in S2, the step "transferring one or more substrates 60 from the first tank 101 to the second tank 102, the second tank 102 being used to contain the SC1 solution" includes: after placing one or more substrates into the second tank 102, injecting the SC1 solution into the second tank 102, thus saving process time.

[0058] Referring to Figures 1 and 2, the process steps of applying the substrate cleaning apparatus in Embodiment 1 of this application to perform the substrate cleaning method are as follows:

[0059] The front-end module robot 50 removes one or more substrates from the loading port 40 in one go or in several steps and transfers them to the substrate carrier (not shown in the figure). The substrate carrier holds the one or more substrates and rotates them 90 degrees along the horizontal axis, and then rotates them 90 degrees along the vertical axis, so that the one or more substrates are held vertically by the substrate carrier.

[0060] A robotic arm assembly (not shown) picks up one or more substrates, such as 13 or 12 substrates, from a substrate carrier and transfers them to a first lifting device (not shown). The first lifting device holds the one or more substrates and immerses them in an SPM solution contained in a first tank 101.

[0061] After the SPM processing in the first tank 101 is completed, the first lifting device rises, and the transfer component (not shown in the figure) takes out one or more substrates from the first lifting device and transfers them to the second lifting device. The second lifting device then places one or more substrates into the second tank 102.

[0062] Before placing the substrate into the second tank 102, HDIW is introduced through the first inlet pipe 1021, filling the second tank 102 with HDIW and continuously overflowing. One or more substrates are placed in the second tank 102 to perform the HDIW cleaning process, including overflow rinsing and rapid drain rinsing. After the HDIW cleaning process reaches the preset time, the HDIW is discharged and SC1 replenishment is started (DIW, NH4OH, and H2O2 are introduced through the first inlet pipe 1021, the second inlet pipe 1022, and the third inlet pipe 1023, respectively), to perform the first SC1 treatment process. During the SC1 replenishment process, the substrate 60 can remain in the second tank 102 indefinitely; alternatively, the substrate can be lifted first, and after the second tank 102 is filled with SC1 solution, the substrate can be vertically placed into the second tank 102. After the first SC1 treatment process reaches its preset time, the SC1 solution is discharged and the DIW replenishment is activated to perform the DIW cleaning process. During the SC1 discharge process, the SC1 discharge action and the spraying action of the spray unit 1026 on the DIW are performed simultaneously. The DIW cleaning process includes overflow rinsing and rapid discharge rinsing. The first SC1 treatment process and the DIW cleaning process can be cycled 2-3 times. After the DIW cleaning process reaches its preset time, the second lifting device rises, and the transfer module 30 picks up one or more substrates from the second lifting device in one go or in multiple batches and transfers them to the moisturizing buffer. In the moisturizing buffer, the one or more substrates can be rotated from a vertical position to a horizontal position and remain moist before being transferred to one or more single-substrate cleaning chambers 201 in the single-substrate cleaning module 20. During the waiting period, the substrates in the moisturizing buffer can be sprayed with DI water to keep the substrate surface moist.

[0063] The transfer module 30 picks up one or more substrates from the moisture buffer and transfers them to one or more single-substrate cleaning chambers 201 to perform a single-substrate cleaning process. The single-substrate cleaning process includes a second SC1 processing process, a DIW cleaning process, and a substrate drying process executed sequentially.

[0064] Referring to Figure 3, the process steps of applying the substrate cleaning apparatus in Embodiment 2 to perform the substrate cleaning method are as follows:

[0065] The front-end module robot 50 removes one or more substrates from the loading port 40 in one go or in several steps and transfers them to the substrate carrier (not shown in the figure). The substrate carrier holds the one or more substrates and rotates them 90 degrees along the horizontal axis, and then rotates them 90 degrees along the vertical axis, so that the one or more substrates are held vertically by the substrate carrier.

[0066] A robotic arm assembly (not shown) picks up one or more substrates, such as 13 or 12 substrates, from a substrate carrier and transfers them to a third lifting device (not shown). The third lifting device holds the one or more substrates and immerses them in an SPM solution contained in a first tank 101.

[0067] After the SPM process in the first tank 101 is completed, the third lifting device rises, and the first transfer robot takes out one or more substrates from the third lifting device and transfers them to the fourth lifting device. The fourth lifting device holds one or more substrates and immerses them in the HDIW contained in the third tank 103 to perform the HDIW cleaning process, including overflow rinsing and fast drain rinsing.

[0068] After the HDIW cleaning process is completed, the fourth lifting device rises, and the second transfer robot takes out one or more substrates from the fourth lifting device and transfers them to the fifth lifting device. The fifth lifting device holds one or more substrates and immerses them in the SC1 solution contained in the second tank 102 to perform the first SC1 processing process.

[0069] After the first SC1 processing is completed, the fifth lifting device rises, and the second transfer robot takes out one or more substrates from the fifth lifting device and transfers them to the sixth lifting device. The sixth lifting device holds one or more substrates and immerses them in the DIW contained in the fourth tank 104 to perform the DIW cleaning process, including overflow rinsing and fast drain rinsing.

[0070] After the DIW cleaning process is completed, the sixth lifting device rises, and the transfer module 30 picks up one or more substrates from the sixth lifting device in one go or in multiple steps and transfers them to the moisturizing buffer. In the moisturizing buffer, the one or more substrates can be rotated from a vertical position to a horizontal position and remain moist before being transferred to one or more single-substrate cleaning chambers 201 in the single-substrate cleaning module 20. During the waiting period, the substrates in the moisturizing buffer can be sprayed with DI water to keep the substrate surface moist.

[0071] The transfer module 30 picks up one or more substrates from the moisture buffer and transfers them to one or more single-substrate cleaning chambers 201 to perform a single-substrate cleaning process. The single-substrate cleaning process includes a second SC1 processing process, a DIW cleaning process, and a substrate drying process executed sequentially.

[0072] While specific embodiments of this application have been described above, those skilled in the art should understand that these are merely illustrative examples, and the scope of protection of this application is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of this application, but all such changes and modifications fall within the scope of protection of this application.

Claims

1. A substrate cleaning apparatus, characterized in that, include: Tank cleaning modules, single-piece cleaning modules, and transfer modules, among which, The tank cleaning module is configured to perform a tank cleaning process on one or more substrates, and the tank cleaning module includes: The first tank is configured to contain the SPM solution; The second tank is configured to contain the SC1 solution; And a transmission component configured to transfer one or more of the substrates from the first tank to the second tank; The single-wafer cleaning module has at least one single-wafer cleaning chamber, which is configured to perform a single-wafer substrate cleaning process, including an SC1 processing process. The transfer module is configured to transfer the substrate between the tank cleaning module and the monolithic cleaning module.

2. The substrate cleaning apparatus as described in claim 1, characterized in that, The tank-type cleaning module also includes: The third tank is configured to accommodate the HDIW; The fourth tank is configured to accommodate DIW; A first transfer robot is configured to transfer one or more of the said substrates from the first tank to the third tank; A second transfer robot is configured to transfer one or more of the substrates from the third tank to the second tank, and to transfer one or more of the substrates from the second tank to the fourth tank.

3. The substrate cleaning apparatus as described in claim 1, characterized in that, The second tank is configured to sequentially contain HDIW, SC1 solution, and DIW.

4. The substrate cleaning apparatus as described in claim 3, characterized in that, The substrate cleaning device further includes a first liquid inlet pipe, a second liquid inlet pipe, and a third liquid inlet pipe; The second tank is provided with a liquid inlet and a liquid outlet, and the first liquid inlet pipe, the second liquid inlet pipe and the third liquid inlet pipe are connected to the liquid inlet; The first inlet pipe is used to introduce HDIW or DIW, the second inlet pipe is used to introduce NH4OH, and the third inlet pipe is used to introduce H2O2.

5. A substrate cleaning method, characterized in that, include: S1. Transfer one or more substrates to an SPM solution contained in a first tank to perform an SPM process. S2. After the SPM process is completed, one or more of the substrates are transferred from the first tank to the second tank, which is used to contain the SC1 solution to perform the first SC1 process. S3. One or more of the substrates are sequentially transferred to a single-piece cleaning chamber to perform the second SC1 processing process.

6. The substrate cleaning method as described in claim 5, characterized in that, In S2, an HDIW cleaning process is included before the first SC1 processing process. And / or, in S2, after the first SC1 processing process, a DIW cleaning process is also included.

7. The substrate cleaning method as described in claim 5, characterized in that, In S2, transferring one or more of the substrates from the first tank to the second tank, the second tank being used to contain the SC1 solution, includes: injecting the SC1 solution into the second tank to a preset height, and vertically placing one or more of the substrates into the second tank and completely immersing them in the SC1 solution.

8. The substrate cleaning method as described in claim 5, characterized in that, The single-piece cleaning chamber is equipped with a nozzle, which is used to supply SC1 solution to the substrate. The second SC1 processing step in S3 includes: S31. Drive the substrate to rotate; S32. The nozzle moves along the radial direction of the substrate and sprays SC1 solution, wherein the moving speed of the nozzle corresponds to the thickness distribution of the oxide film layer on the surface of the substrate along the radial direction of the substrate.

9. The substrate cleaning method as described in claim 5, characterized in that, In S2, transferring one or more of the substrates from the first tank to the second tank, the second tank being used to contain the SC1 solution, includes: placing one or more of the substrates into the second tank and then injecting the SC1 solution into the second tank.

10. The substrate cleaning method as described in claim 5, characterized in that, In S3, after the second SC1 processing process, at least one DIW cleaning process and at least one substrate drying process are also included.

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