45results about How to "Not crowded" patented technology

The invention discloses an LED epitaxial wafer growing on an Ag substrate. The LED epitaxial wafer growing on the Ag substrate comprises the Ag substrate, an AlN buffer layer, a U-GaN film layer, an N-GaN film layer, an InGaN / GaN multi-quantum-well layer and a P-GaN film. The AlN buffer layer, the U-GaN film layer, the N-GaN film layer, the InGaN / GaN multi-quantum-well layer and the P-GaN film sequentially grow on the Ag substrate. By the adoption of the low-temperature growth technology, a GaN film grows on the novel metal Ag substrate in an epitaxial mode, so that the LED epitaxial wafer with the high quality is obtained; by the adoption of the metal Ag substrate, the growth technology is simple, the price is low, and the manufacturing cost of a device can be reduced to a great extent; by the selection of the proper crystal orientation, the GaN epitaxial film with the high quality is obtained from the Ag substrate (111) and the efficiency of nitride devices such as a photoelectric detector can be improved to a great extent.

The invention discloses a parallel connection type descending operation track train and a transporting method thereof. The parallel connection type descending operation track train comprises a return closed descending track line, an operation track line, descending trains running on the descending track line, and operation trains running on the operation track line, wherein the two track lines are both provided with descending segments and curve rotation segments, and the descending segments of the descending track line and the descending segments of the operation track line are in equidistant and parallel arrangement; and the descending trains and the operation trains respectively operate in an equidirectional and independent manner on the descending track line and the operation track line, and the descending trains and the operation trains are connected in parallel and operate at an equal speed periodically at the descending segment of the operation track line. According to the invention, getting on and off the trains in an intensive and partitioned manner at all lines are realized, the carrying capacity is large, the interval time between trips is short, the average travelling speed is high, each long-range passenger of whom the range is more than two thousands of meters directly reaches destinations without stopping halfway, the problems that the passengers travel inconveniently and uncomfortably, the travelling is crowded and the time is consumed are solved in a centralized manner, and at the same time, the load factor of the trains is increased at time periods and road segments with fewer flows of passengers.

The invention relates to a novel indoor culturing pond for inkfish culture. The novel indoor culturing pond comprises a pond wall, a first water inlet pipe, a water outlet pipe, a lamp bulb, a flotage, a manhead, a first filtering net, a tee-joint pipe, a transition pipeline, a heating device, a salt adding valve, a feed inlet, a feeding device and an aerator. A water inlet is formed in the upper portion of the pond wall, a first valve is arranged on the first water inlet pipe, the first water inlet pipe is connected with the water inlet, a water outlet pipe valve is arranged on the water outlet pipe, and the flotage is located on the surface of the pond water and is connected with a rope; a ventilating pipeline is located on the lower surface of a foot bridge and connected with air stone, and the air stone is located in a culture cage. According to the novel indoor culturing pond for inkfish culture, the structure composed of the water outlet pipe, the transition pipeline, the heating device and a second water inlet pipe is a circulating structure, in this way, waste water in the culturing pond can be input into the culturing pond again after being filtered and treated, and cyclic utilization of the pond water is achieved.

The invention discloses an LED epitaxial wafer growing on a metal Al substrate. The LED epitaxial wafer comprises the metal Al substrate, an Al2O3 protecting layer growing on the metal Al substrate with a metal Al substrate crystal face (111) as an epitaxial face, a U-GaN thin film layer, an N-GaN thin film layer, an InGaN / GaN multi-quantum-well layer and a p-type GaN thin film. The epitaxy orientation relationship of the U-GaN thin film layer, the N-GaN thin film layer, the InGaN / GaN multi-quantum-well layer and the p-type GaN thin film is GaN (0001) / / Al2O3 (0001) / / Al (111), and the U-GaN thin film layer, the N-GaN thin film layer, the InGaN / GaN multi-quantum-well layer and the p-type GaN thin film grow on the Al2O3 protecting layer from bottom to top. By selecting proper crystal orientation, a high-quality GaN epitaxial thin film is obtained on the Al (111) substrate, and accordingly the light emitting efficiency of an LED is improved.

The invention discloses a GaN thin film growing on a metal Al substrate and a preparing method and application thereof. The GaN thin film growing on the metal Al substrate comprises the Al substrate, an Al2O3 protecting layer growing on an epitaxy face which is a face (111) of the Al substrate and a GaN thin film layer growing on the Al2O3 protecting layer in an epitaxial mode. The crystal epitaxial orientation relationship of the Al2O3 protecting layer and the GaN thin film layer is GaN (0001) / / Al2O3 (0001) / / Al (111). Proper crystal orientation is selected, so that a high-quality GaN epitaxial thin film is obtained on the Al (111) substrate and is used for improving nitride device efficiency. The GaN thin film is mainly used as dielectric layer thin films of a sound wave resonator, a logic circuit, a light-emitting diode, an optoelectronic thin film device, a solar cell, a photodiode, a photoelectric detector, a laser device and the like.

The invention discloses a student dormitory information management and acquisition device. The student dormitory information management and acquisition device comprises a first mounting groove, a base, a face recognition sensing region and fingerprint sensing regions, wherein the base is arranged in the center of the top end of the bottom plate; a storage battery is arranged at the bottom end in the base; a display screen is arranged at the upper end of the front face of the base, a first mounting groove is transversely formed in the top end of the display screen, four sensing platforms are annularly arranged in a second mounting groove, the fingerprint sensing regions are arranged in the centers of the top ends of the sensing platforms, and the face recognition sensing region is arrangedin the center of the top end of the second mounting groove. According to the student dormitory information management and acquisition device, the fingerprint sensing regions are placed in the second mounting groove, the fingerprint sensing regions are prevented from being interfered by external dust and water vapor, hot air in the first mounting groove can be pumped out under the action of an exhaust fan arranged on one side in the first mounting groove, blow-drying is conducted by means of the hot air, and the fingerprint collection failure is avoided.

The invention discloses a mixing station, a main mixing building and a metering structure thereof, and a metering structure establishment method, wherein the metering structure of the main mixing building comprises a bracket, a water metering device, an additive metering device, an aggregate standby bin and a powder metering device, wherein the bracket comprises support legs and a platform arranged at the top ends of the support legs; a first mounting channel and a second mounting channel are arranged on the platform at an interval; the aggregate standby bin is fixedly mounted in the first mounting channel; a part of the aggregate standby bin is positioned at the upper part of the platform, and the other part of the aggregate standby bin is positioned at the lower part of the platform; the powder metering device is fixedly mounted in the second mounting channel; a part of the powder metering device is positioned at the upper part of the platform, and the other part of the powder metering device is positioned at the lower part of the platform; the water metering device and the additive metering device are fixed at the lower part of the platform. Through the application of the invention, the disassembly and assembly maintenance space and efficiency of all devices in the metering structure are effectively improved and the requirements of manufacturing and processing precision and on-site assembly experiences are lowered while the preassembly and the transportation are facilitated.

The invention discloses a vehicle-mounted manned high-altitude aircraft deforming fire-fighting electric vehicle. The vehicle-mounted manned high-altitude aircraft deforming fire-fighting electric vehicle comprises a vehicle body, a vehicle top, an automatic door system, an aircraft assembly, a lifting system, a water supply system, a vehicle power assembly and a power battery assembly. The vehicle-mounted manned high-altitude aircraft deforming special fire-fighting electric vehicle can execute the fire-fighting task on the ground, the electric vehicle also can fly to the altitude to executethe task on the high floor or some areas where the vehicle cannot arrive, the fire extinguishing time is greatly saved, the personal death is reduced, economic losses are reduced, fire extinguishing is not limited by the height, space and the like, the fire-fighting fire extinguishing efficiency is greatly improved, the structure principle is clear and simple, assembling and manufacturing are convenient, and the vehicle is more practical.

The invention discloses a GaN thin film growing on a W substrate. The GaN thin film comprises an AlN buffer layer growing on the W substrate and a GaN thin film growing on the AlN buffer layer; the AlN buffer layer is an AlN buffer layer growing at 400-500 GEG C; the GaN thin film is a GaN thin film growing at 700-800 DEG C. The invention further discloses a preparation method and application for the GaN thin film growing on the W substrate. The GaN thin film growing on the W substrate prepared by the method has the advantages of low dislocation density and high crystal quality.

The invention discloses a self-service bee divider which comprises a base plate, wherein the base plate is connected with a left bee-entering box plate and a right bee-entering box plate; the front end and rear end of the bee-entering box are hollow; a plurality of queen bee rods are arranged at the front end of the bee-entering box; the base plate on the front side of the queen bee rods is arranged as a runway; the bee-entering box is connected with a bee collector through a connecting rod; a radiating yarn is arranged between the bee-entering box and the bee collector; the bottom of the radiating yarn at the rear end of the bee-entering box is connected with the bee dividing box; a bee dividing connecting part is arranged in the bee collector; a queen bee channel is arranged on the lateral side of the bee dividing connecting part. The invention also discloses a realization method for the self-service bee divider. The self-service bee divider has the characteristics of simple structure, low cost, simple and practical bee dividing, high efficiency, good use effect and high economic benefit.

The invention discloses an LED epitaxial wafer growing on a Cu substrate. The LED epitaxial wafer growing on the Cu substrate comprises the Cu substrate, an AlN buffer layer, a U-GaN film layer, an N-GaN film layer, an InGaN / GaN multi-quantum-well layer and a P-GaN film. The AlN buffer layer, the U-GaN film layer, the N-GaN film layer, the InGaN / GaN multi-quantum-well layer and the P-GaN film sequentially grow on the Cu substrate. By the adoption of the low-temperature growth technology, a GaN film grows on the novel metal Cu substrate in an epitaxial mode, so that the LED epitaxial wafer with the high quality is obtained; by the adoption of the metal Cu substrate, the growth technology is simple, the price is low, and the manufacturing cost of a device can be reduced to a great extent; by the selection of the proper crystal orientation, the GaN epitaxial film with the high quality is obtained from the Cu substrate (111) and the efficiency of nitride devices such as a photoelectric detector can be improved to a great extent.

The invention provides an epitaxial growth GaN thin film on a metal Al substrate. The GaN thin film comprises an Al substrate, an AlN buffer layer, a GaN buffer layer, an amorphous AlN insertion layer and a GaN thin film layer, wherein the AlN buffer layer grows on the epitaxial surface of the Al substrate (111); the GaN buffer layer epitaxially grows on the AlN buffer layer; the amorphous AlN insertion layer grows on the GaN buffer layer; the GaN thin film layer epitaxially grows on the amorphous AlN insertion layer; and the crystal epitaxy orientation relationship between the AlN buffer layer and the GaN thin film layer is that GaN (0001) is parallel to AlN (0001) and parallel to Al (111). The high-quality GaN epitaxial thin film is obtained on the Al substrate (111) through selecting proper crystal orientation; and the efficiency of a nitride device is improved.

The invention provides a locating and clamping clothes hanger. The clothes hanger cannot fall off due to overlarge wind, and the clothes hanger cannot be crowded; the positioning and clamping clotheshanger can be assembled and disassembled, is convenient to carry and does not occupy a large area, the positioning and clamping clothes hanger comprises a clothes hanger hook and a clothes hanger body, a limiting and fastening device capable of positioning and clamping the clothes hanger hook to a hanging rope or a hanging rod is arranged on the clothes hanger hook, and the clothes hanger body andthe clothes hanger hook are connected through a connecting device capable of being assembled and disassembled conveniently.

The invention provides a small home computer desk, and relates to the technical field of computers. The small home computer desk comprises a suspended fixing plate, one side of the suspended fixing plate is connected with a hook in an inserted manner, one side, far away from the hook, of the suspended fixing plate is fixedly connected with a cabinet, the bottom of the suspended fixing plate is fixedly connected with a first connector, one side, far away from the suspended fixing plate, of the first connector is fixedly connected with a desk plate, and a placement slot is formed in the middle of the desk plate. According to the small home computer desk, by cooperation of the suspended fixing plate, the first connector, the desk plate, a second connector, a display fixing plate, a display fixing frame, a supporting frame and a host placement box, the second connector rotates when a display is fixed onto the display fixing plate through the display fixing frame, and the small home computer desk solves the problems that an existing small house using a traditional computer desk is crowded, and the traditional computer desk is inconveniently used.

The invention discloses a new type of table for medical publicity, which is characterized in that one side of the rectangular desktop is connected with one side of the trapezoidal desktop, and the L-shaped table legs support the rectangular desktop and the trapezoidal desktop. There are storage boxes at the bottom. Through the above settings, a certain angle is formed between the rectangular desktop and the trapezoidal desktop of the present invention, so that the space on the front side of the entire desktop is enlarged, and when the present invention is used for medical knowledge publicity, the consultants will not be crowded, which facilitates the publicity of medical knowledge universal.

The invention discloses an AlN film growing on a Zr substrate. The AlN film sequentially comprises the Zr substrate and an AlN film part from the bottom up, wherein the AlN film part is an AlN film growing at 450-550 DEG C. The invention further discloses a preparation method and an application of the AlN film growing on the Zr substrate. The AlN film has the advantages of low dislocation density and good crystal quality; the Zr substrate is easy to obtain and low in price; and the production cost can be lowered.

The invention relates to an outer wall cleaning machine for a water barrel for barreled water. The outer wall cleaning machine comprises a rack, a vertical main shaft is arranged on the rack, a side brush support is coaxially and rotationally arranged on the main shaft, at least two side brush shafts which are arranged in the peripheral direction of the main shaft at intervals are rotationally arranged on the side brush support, side brushes are fixed to the side brush shafts, and a side brush driving gear and a central brush are fixedly arranged on the side brush support and are coaxial withthe main shaft. Side brush driven gears are fixedly arranged on the side brush shafts respectively, the side brush support is rotationally provided with side brush middle gears which are in engaged transmission with the side brush driving gears and the corresponding side brush driven gears, and the rack is further provided with a driving mechanism for driving the side brush support to rotate. By means of the outer wall cleaning device, the problem is solved that in the prior art, the rotation directions of the side brushes and the central brush are inconsistent, so that the water barrel is likely to be stuck.

Disclosed are a parallel-connection-type descending operation rail train and transporting method thereof, the parallel-connection-type descending operation rail train comprising: a to-and-fro closed descending rail line and operation rail line, both of the two rail lines having a descending section and a curve rotation section; and a descending train traveling on the descending rail line and an operation train traveling on the operation rail line; a descending section of the descending rail line and a descending section of the operation rail line are disposed in parallel at equal intervals; and the descending train and the operation train independently travel on respective rail line in the same direction, and are periodically connected in parallel in the descending sections of the rail lines to travel at the same speed. The present invention enables passengers to get on or off the train in dense regions (or small stations) on the whole line, has a large carrying capacity, a short interval time between each two trains, and a high average traveling speed, and each long-range passenger travelling more than two kilometers will arrive at a destination without stopping on mid-travel, thus providing great convenience for all passengers adjacent to a passenger railway line to get on the train at a nearby station at any time, and centrally saving the problem that the passenger takes a train without convenience or comfort, and spends a lot of time. The passenger railway line increases a seat occupancy rate of the train by multiple times, significantly reduces the rate of independent travel in a downtown area, eases an urban traffic congestion, and is a thorough break-through as a solution to an urban transportation problem.

The invention discloses a GaN film growing on a Zr substrate. The GaN film sequentially comprises the Zr substrate and a GaN film part from the bottom up, wherein the GaN film part is a GaN film part growing at 500-700 DEG C. The invention further discloses a preparation method and an application of the GaN film growing on the Zr substrate. The GaN film growing on the Zr substrate has the advantages of low dislocation density and good crystal quality; the Zr substrate is easy to obtain and low in price; and the production cost can be lowered.

The invention discloses an AlN thin film grown on a W substrate. The AlN thin film comprises the W substrate and an AlN thin film body, wherein the W substrate and the AlN thin film body are sequentially arranged from bottom to top, the AlN thin film body is an AlN thin film body grown at 400-500 DEG C, and the W substrate adopts the surface (110) as the epitaxial surface. The invention further discloses a preparation method and application of the AlN thin film grown on the W substrate. The prepared AlN thin film has the advantages of being low in defect density, good in crystal quality and the like, and the preparation method has the advantages of being simple in growth process and low in preparation cost.

The invention discloses a smart home bed based on the Internet of Things, which includes a first bed body and a second bed body. The first bed body and the second bed body have the same structure. The bed body includes: the body, the mattress placed on the body and the head of the bed; the induction unit and the central control system, the network connection devices set inside the first bed body and the second bed body are connected to the Internet with signals, and the Internet signals are connected with Mobile terminal, the mobile terminal communicates with the APP software through a communication protocol; a music player is installed on the head of the bed, and an air purifier is installed at the end of the body. The intelligent furniture bed based on the Internet of Things makes the bed beyond the meaning of ordinary bedding by adopting the mode of remote communication control of the mobile terminal.

The invention belongs to the technical field of organic contaminated soil in-situ management and control and safety guarantee, and particularly relates to an organic contaminated soil management and control disposal system and application thereof. Comprising a negative-pressure air guide layer, a power operation room and at least one group of negative-pressure air guide system, wherein the negative-pressure air guide layer is arranged at the bottom of a to-be-built building at the upper part of the site; the negative pressure air guide system comprises a negative pressure power system and a negative pressure air guide pipe network system; the negative pressure air guide pipe network system is laid in the negative pressure air guide layer; the negative pressure power system is arranged in the power operation chamber, connected with the negative pressure gas guide pipe network system and used for providing negative pressure power, and volatile and semi-volatile pollution gas entering the negative pressure gas guide layer is forcibly extracted and guided out through the negative pressure gas guide pipe network system. According to the invention, gaseous pollutants from lower-layer soil in sucked indoor air and gaseous pollutants from lower-layer soil in sucked outdoor air are eliminated, and human health risks in the proposed building are eliminated.

A connecting unit includes a wiring board (10) and a connector (17). The wiring board has a main face and a side face substantially perpendicular to the main face, and includes a metal plate (11) and a first terminal (12). The connector has a through hole (21) for passing the first terminal therethrough. The first terminal is disposed in an intermediate layer of the wiring board and is projected outwardly from the side face. When the connector is connected to the wiring board, the first terminal passes through the through hole.

The invention discloses an intelligent furniture bed based on the Internet of Things, which includes a first bed body and a second bed body. The first bed body and the second bed body have the same structure. The bed body includes: the body, the mattress placed on the body and the head of the bed; the induction unit and the central control system, the network connection devices set inside the first bed body and the second bed body are connected to the Internet with signals, and the Internet signals are connected with Mobile terminal, the mobile terminal communicates with the APP software through a communication protocol; a music player is installed on the head of the bed, and an air purification system is installed at the rear of the body. The intelligent furniture bed based on the Internet of Things makes the bed beyond the meaning of ordinary bedding by adopting the mode of remote communication control of the mobile terminal.