Diode infrared detector readout integrated circuit with self-stabilization zero circuit
A technology of infrared detectors and readout circuits, applied in the direction of electric radiation detectors, etc., can solve problems such as excessive DC bias, easy saturation of integral power, limited dynamic range, etc., to eliminate offset voltage and low-frequency noise, Effects of eliminating offset voltage and low-frequency noise, improving integration and signal-to-noise ratio
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2014-11-26
Smart Images
Figure 1 Figure 2
Abstract
Description
technical field
[0001] The invention relates to a circuit structure, in particular to a diode infrared detector readout circuit with a self-stabilizing zero point circuit, which belongs to the technical field of microelectronics. Background technique
[0002] Infrared detection technology is being increasingly widely used in military, space technology, medicine and related fields of national economy. Infrared detection chip is the core component of infrared detection technology to obtain infrared signals. This part consists of an infrared detector and a readout circuit (ROIC: readout integrated circuits). The basic function of the ROIC circuit is to convert, amplify and transmit the infrared detector signal. The readout circuit is the interface circuit between the infrared detector and the subsequent analog-to-digital converter (ADC: analog to digital converter), and its performance directly affects the performance of the entire readout circuit.
[0003] With the continuo...
Examples
Embodiment Construction
[0019] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0020] like figure 2 Shown: The PN junction of the diode-type uncooled infrared detector has good temperature characteristics, and its forward voltage decreases with the increase of temperature. Therefore, the temperature change of the detector can be detected by measuring the change of the voltage drop across the diode, and then the intensity of infrared radiation incident on the detector can be obtained. In order to overcome the problem of the conduction voltage drop of the diode infrared detector, eliminate offset voltage and low-frequency noise, and improve the integration and signal-to-noise ratio of the system, the present invention includes a transistor 2 connected to the negative end of the diode infrared detector 1, said The drain terminal of the transistor 2 is connected with the negative terminal of the diode infrared detector 1, and the source ter...