50results about How to "Increased magnetic sensitivity" patented technology

A microelectromechanical modulating magnetic sensor comprising a base; a magnetic transducer associated with the base that provides an output in response to a magnetic field; a pair of movable flux concentrators positioned to move relative to the magnetic transducer; the pair of movable flux concentrators having a region of high flux concentration between the pair of movable flux concentrators; the pair of flux concentrators moving together in tandem with the distance between the pair remaining substantially constant during movement; support structure for supporting the pair of movable flux concentrators; a power source for causing the movable flux concentrators to move at a frequency within a predetermined frequency range; whereby when the pair of movable flux concentrators is in a first position the region of high flux concentration is in a first location, and when the pair of movable flux concentrators is in a second position, the region of high flux concentration is in a second position; such that as the flux concentrators move from the first position to the second position the intensity of the flux sensed by the transducer is modulated as the region of high flux concentration approaches and recedes from the location of the transducer.

The invention relates to a multifunctional hydrogen-rich water kettle and a use method. The kettle comprises a base. The upper portion of the base is connected with a kettle body. A water storage bin, a filter element and strong magnets are arranged in the kettle body. A light-pervious area, an electrode ring, an LED lamp bulb and a control circuit are arranged at the bottom in the kettle body. An automatic kettle lid is arranged on the upper portion of the kettle body. An aluminum shell type PTC heater is arranged on the inner side wall of the kettle body. A handle is arranged beside the kettle body. A switch button of the kettle lid, an indicator lamp of the PTC heater and a buzzer are arranged on the handle. A touch switch of the control circuit and a power interface are arranged on the peripheral side of the base. In the use process, the switch button on the handle is pressed to open the kettle lid automatically, water is injected into the water storage bin till the water storage bin is full, and the water is filtered to the lower part through the filter element; a power source is plugged into the power interface, and the touch switch is pressed to start electrolytic hydrogen making; besides, a sound-light prompting device is arranged for display. According to the multifunctional hydrogen-rich water kettle, hydrogen-rich water is made through electrolysis on the basis of filtration and magnetization of the water, and the hydrogen-rich water can be heated when needed.

A method for manufacturing magnetic sensing elements for use in magnetic sensors and hard disks. A ferromagnetic layer and a second antiferromagnetic layer are deposited on a nonmagnetic layer having a uniform thickness. The second antiferromagnetic layer is milled to form an indent. The resulting magnetic sensing element has a free magnetic layer reliably set in a single-magnetic-domain state in the track width direction.

A method and system are presented for directing a charged particle beam towards and away from a sample. The system comprises a lens arrangement having an electrode formed with a beam opening for a charged particle beam passage therethrough; and a magnetic deflector. The magnetic deflector has a magnetic circuit formed by a core part for carrying excitation coils and a polepieces part. The polepieces of the magnetic deflector are in electrical communication with the electrode of the lens arrangement and are electrically insulated from the other part of the magnetic circuit.

The invention discloses a resonance-type magnetoelectric sensor for ferromagnetic material defect detection and a detection method thereof. According to the sensor, a magnetizing coil connected with a frequency-stabilization amplitude-stabilization excitation current source is wound at the middle position of the bottom section of a U-shaped soft magnetic piece; a magnetoelectric element and a permanent magnet are arranged between a left side section and a right side section; the magnetoelectric element consists of two identical magnetostrictive material blocks and a piezoelectric material block; the two magnetostrictive material blocks are respectively and fixedly adhered to the left and right side faces of the piezoelectric material block; the permanent magnet which is fixedly connected with the magnetoelectric element is arranged between the bottom end of the magnetoelectric element and the gap at the bottom section of the U-shaped soft magnetic piece, so that the frequency of an alternating current exciting signal is the same as the resonance frequency of the magnetoelectric element; and moreover, the tops of the left and right side sections of the U-shaped soft magnetic piece are tightly combined with the tested piece and move along the surface of the tested piece, the voltage of a silver electrode layer on the piezoelectric material block is monitored, and if voltage pulse exists, a defect exists at the position where the tested piece is opposite to the magnetoelectric element. An extremely weak magnetic field can be detected, and a magnetic field with moderate intensity can be detected.

A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic field. The pinned magnetic layer, the insulating barrier layer and the free magnetic layer are deposited in the named order. A first protective layer composed of a platinum-group element is disposed on the free magnetic layer, and a second protective layer composed of Ti is disposed on the first protective layer.

The invention discloses the synthesis and manufacturing of a novel core-shell nano-carrier with a drug-containing nanocomposite core surrounding with a single crystalline magnetic iron oxide shell. With a unique core-shell configuration, active agents such as drugs and biomolecules encapsulated in the core with an outer single-crystalline thin iron oxide shell can be perfectly protected from environmental damages and in the meantime, eliminating un-desirable release due to un-controllable diffusion of the active molecules from the nanocapsules during the course of delivery in patient's body, before reaching the disease sites.

A corrosion evaluation device for performing a quantitative evaluation of corrosion by measuring a quantity of decrease in the thickness of a magnetic material which is covered by a non magnetic material or a magnetic material which is not covered by a non magnetic material which includes: a magnetic field generating device for generating such a magnetic field that includes the magnetic material in a magnetic path, a Giant Magnet-Resistive effect (GMR) sensor provided with a GMR sensor for detecting a magnetic flux leakage with regard to the magnetic material and converts a change in the magnetic flux into an electrical signal, a thickness reduction calculation portion for calculating a quantity of decrease in the thickness of the magnetic material based on the electrical signal. The corrosion evaluation device precisely performs a quantitative evaluation of corrosion even when the magnetic material, which is to be evaluated, is covered by a non magnetic material.

A magnetic sensor device includes a piezoelectric substrate and an IDT electrode disposed on the piezoelectric substrate. At least a portion of the IDT electrode is made of a ferromagnetic metal and the duty ratio of the IDT electrode is higher than about 0.5 and lower than or equal to about 0.99.

The invention discloses a magnetic-field vector sensor, which comprises a first silicon wafer (1) and a second wafer (2), wherein the first silicon wafer (1) serves as a device layer, the second wafer(2) serves as a substrate, and the first silicon wafer (1) is provided with a plurality of same-category magnetic sensitive components which form three magnetic sensitive units so as to realize the measurement of magnetic field components of different directions. Meanwhile, a gathering / magnetic conductive micro-structure is embedded in a chip, the direction of the magnetic field component can beconverted, and the measurement of a space magnetic field is realized. The magnetic-field vector sensor has a simple structure, and the miniaturization and the integration of the chip are realized. The manufacture technology has the advantages of being simple in operation and easy in implementation, and is suitable for large-scale industrial application.

The invention belongs to the technical field of metallurgy, and particularly relates to a preparation method of high grade non-oriented silicon steel based on thin-strip casting. The high grade non-oriented silicon steel is prepared from the following chemical components in percentage by weight: less than or equal to 0.004 percent of C, 2.6 to 3.4 percent of Si, 0.1 to 0.4 percent of Mn, 0.4 to 0.8 percent of Al, less than or equal to 0.003 percent of S, less than or equal to 0.003 percent of N and the balance of Fe. The preparation method comprises the following steps: preparing smelted molten steel into a casting strip of 2 to 3 mm through a thin-strip casting machine, and directly rolling at 1000 to 1150 DEG C after 8 to 15 percent of hot rolling; then keeping warm for 10 to 20 minutesat 1000 to 1100 DEG C; carrying out acid pickling and warm rolling, wherein the warm rolling temperature is 200 to 500 DEG C, and the rolling reduction is 70 to 85 percent; carrying out annealing andcoating treatment on a plate coil which is subjected to the warm rolling, thus preparing a non-oriented silicon steel sheet. According to the preparation method disclosed by the invention, the technology is simple, energy consumption and equipment investment are reduced, and meanwhile, an induction value of the high grade non-oriented silicon steel can be remarkably increased.

A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.

A magnetometer provides a newly designed signal processing circuit that can reduce noise and increase the magnetic sensitivity by means of reducing the noise of GND electrode potential occurred at the timing when the pulse current passes through the magnetic wire. It is characterized by preparing a differential element with a neutral coil electrode, a differential sample holding circuit and a differential amplifier circuit.

A vertical Hall element having an improved sensitivity and reduced offset voltage includes: a second conductivity type semiconductor layer formed on a semiconductor substrate and having an impurity concentration that is distributed uniformly; a second conductivity type impurity diffusion layer formed on the semiconductor layer and having a concentration higher than in the semiconductor layer; a plurality of electrodes formed in a straight line on a surface of the impurity diffusion layer, and each formed from a second conductivity type impurity region that is higher in concentration than the impurity diffusion layer; and a plurality of first conductivity type electrode isolation diffusion layers each formed between two electrodes out of the plurality of electrodes on the surface of the impurity diffusion layer, to isolate the plurality of electrodes from one another.

The invention discloses a pressure / two-dimensional magnetic field single chip integrated sensor, which comprises a first magneto diode MD1, a second magneto diode MD2, a third magneto diode MD3, a fourth magneto diode MD4, a first varistor R1, a second varistor R2, a third varistor R3, a fourth varistor R4, a first load resistor Rx1, a second load resistor Rx2, a third load resistor Ry3, and a fourth load resistor Ry4, wherein the positive electrode of the first magneto diode MD1 and the positive electrode of the second magneto diode MD2 form a differential output, the positive electrode of the third magneto diode MD3 and the positive electrode of the fourth magneto diode MD4 form a differential output, and due to the two differential outputs, two-dimensional magnetic field detection is realized; and the first varistor R1 and the fourth varistor R4 are serially connected to form a first output voltage Vout1, the second varistor R2 and the third varistor R3 are serially connected to form a second output voltage Vout2, and the two output voltages form a differential output to realize pressure detection.

The invention relates to the field of medical diagnostics and can be used in magnetic resonance imaging (MRI) and magnetic resonance spectroscopy (MRS) for increasing the quality of diagnostics of the internal organs of humans and animals. By virtue of a metamaterial, which is used as an electromagnetic field amplifier, being made from a set of advantageously oriented conductors, it becomes possible to spatially rearrange magnetic and electric fields operated at radio frequencies. In particular, in the examined object area, the radio frequency magnetic field is resonantly amplified, which makes it possible to increase the signal / noise ratio in MRI and to obtain better quality images and / or to perform the MRI examinations more quickly as there is no need to accumulate the signal. The proposed design of the metamaterial makes it possible to distance the radio frequency electric field from the area where the examined object is located, therefore enhancing safety of MRI scanning.

A magnetic sensor of the present invention has an elongate element portion having a magnetoresistive effect and a pair of elongate soft magnetic bodies that are arranged along the element portion on both sides of the element portion with regard to a short axis thereof. Each soft magnetic body includes a central portion that is adjacent to the element portion from one end to another end of the element portion with regard to a long axis direction thereof and a pair of end portions that protrude from the central portion in the long axis direction. A width of at least one of the end portions gradually decreases in a direction away from the central portion in at least a part of the end portions in the long axis direction thereof.

The invention relates to a magnetometer and a magnetometer detection method. A laser module is used for emitting a first laser beam. A beam splitting module is arranged on a light path of the first laser beam. A linear polarization module is arranged on a light path of the second laser beam. An acousto-optic modulation module is arranged on a light path of the linearly polarized light beam with adjustable light intensity. A diffracted light selection module is arranged on a light path of the diffracted light. A circular polarization module is arranged on a light path of the first-stage diffracted light. An atomic gas chamber is arranged on a light path of the circularly polarized light. A photoelectric detection module is arranged on a light path of the detection light. The output end of a signal generation module is connected with the control end of the acousto-optic modulation module. The input end of a lock-in amplification module is connected with the output end of the photoelectric detection module and the output end of the signal generation module. The input end of a control module is connected with the output end of the lock-in amplification module, and the output end of the control module is connected with the control end of the signal generation module.

The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type; a first electrode set formed in a surface of the semiconductor layer and including a first drive current supply electrode, a Hall voltage output electrode, and a second drive current supply electrode aligned along a straight line extending in a first direction in this order; and second to fifth electrode sets each having the same configuration as the configuration of the first electrode set and aligned with the first electrode set along a straight line extending in a second direction perpendicular to the first direction. The Hall voltage output electrode has a first depth, the first and second drive current supply electrodes have a second depth that is larger than the first depth.

Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.

The present invention relates to a magnetorheological fluid composition and a process for preparing the same, which has excellent magnetorheological properties. The fluid composition exhibits change in rheological characteristics in the presence of an external magnetic field. Further, the magnetorheological characteristics of the fluid composition can be optimised for the improved magnetic sensitivity to external magnetic field and negligible magnetic retentivity after removal of the external magnetic field. The sensitivity of the fluid to external magnetic field can be varied by varying the pure iron content of the magnetic sensitive particles composition while, the magnetic retentivity of the fluid (after removal of external magnetic field) can be varied by varying the ferrite alloy content of the same. The fluid composition utilises a magnetic sensitive particles stabiliser or surfactant, which is synthesised from the carrier fluid used in the fluid composition. The fluid composition, prepared according to this process, does not suffer from the rapid settling of the magnetic particles as it utilises a carrier fluid based surfactant, which improves the homogeneity of the fluid composition.