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Pressure/two-dimensional magnetic field single chip integrated sensor

A two-dimensional magnetic field, monolithic integration technology, applied in the field of sensors, can solve the problems of low sensor sensitivity, difficult to achieve chip integration and miniaturization, large temperature drift, etc., to achieve a high degree of integration, small size and stability. Good results

Active Publication Date: 2016-01-20
HEILONGJIANG UNIV
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  • Description
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Problems solved by technology

[0005] However, there are few reports on the integrated sensor of pressure / two-dimensional magnetic field. At the same time, due to the limitation of the basic structure of the sensor and the integration process conditions, the sensor has problems such as low sensitivity and large temperature drift, and it is difficult to realize the integration and miniaturization of the chip. change

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  • Pressure/two-dimensional magnetic field single chip integrated sensor
  • Pressure/two-dimensional magnetic field single chip integrated sensor
  • Pressure/two-dimensional magnetic field single chip integrated sensor

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Embodiment Construction

[0066] The present invention will be further described in detail through the drawings and examples below. Through these descriptions, the features and advantages of the present invention will become more apparent.

[0067] The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as superior or better than other embodiments. While various aspects of the embodiments are shown in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0068] A pressure / magnetic field monolithic integrated sensor provided according to the present invention, such as figure 1 , figure 2 As shown, the monolithic integrated sensor includes a first magnetic sensitive diode MD1 for detecting a two-dimensional magnetic field, a second magnetic sensitive diode MD2, a third magnetic sensitive diode MD3, a fourth magnetic sensitive diod...

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Abstract

The invention discloses a pressure / two-dimensional magnetic field single chip integrated sensor, which comprises a first magneto diode MD1, a second magneto diode MD2, a third magneto diode MD3, a fourth magneto diode MD4, a first varistor R1, a second varistor R2, a third varistor R3, a fourth varistor R4, a first load resistor Rx1, a second load resistor Rx2, a third load resistor Ry3, and a fourth load resistor Ry4, wherein the positive electrode of the first magneto diode MD1 and the positive electrode of the second magneto diode MD2 form a differential output, the positive electrode of the third magneto diode MD3 and the positive electrode of the fourth magneto diode MD4 form a differential output, and due to the two differential outputs, two-dimensional magnetic field detection is realized; and the first varistor R1 and the fourth varistor R4 are serially connected to form a first output voltage Vout1, the second varistor R2 and the third varistor R3 are serially connected to form a second output voltage Vout2, and the two output voltages form a differential output to realize pressure detection.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a pressure / two-dimensional magnetic field monolithic integrated sensor. Background technique [0002] With the advancement of science and technology, the application of sensors has been paid more and more attention, but a single sensor can only measure a physical quantity, and in the fields of industrial production, aerospace and aviation, in order to accurately and comprehensively understand the object or environment for further control, Multiple physical quantities are often required, and an integrated sensor that integrates multiple functional sensitive components on one chip can measure multiple physical quantities at the same time. This kind of integrated sensor has the advantages of small size, light weight, and integration. [0003] The invention patent with the patent number 201310208494.8 uses integrated design technology to design temperature, humidity, carbon dioxide s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D21/02
Inventor 赵晓锋李宝增温殿忠
Owner HEILONGJIANG UNIV
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