Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Magnetic-field vector sensor and manufacture technology method

A magnetic field sensor, magnetic field vector technology, applied in the size/direction of the magnetic field, the use of electromagnetic devices for magnetic field measurement, magnetic variable measurement and other directions, can solve the problems of inability to achieve space magnetic vector measurement, large cross-interference, poor sensitivity consistency, etc. Achieve the effect of improving the consistency of magnetic sensitivity, eliminating cross-interference and improving magnetic sensitivity

Pending Publication Date: 2018-12-28
HEILONGJIANG UNIV
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the space magnetic vector sensor mainly has problems such as large cross-interference in each direction and poor sensitivity consistency.
In order to optimize the sensor characteristic index, the same kind of magnetic sensitive components should be selected for structural design, but the same kind of magnetic sensitive components are only sensitive to the magnetic field in the same direction, and the magnetic vector measurement in all directions in space cannot be realized

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic-field vector sensor and manufacture technology method
  • Magnetic-field vector sensor and manufacture technology method
  • Magnetic-field vector sensor and manufacture technology method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0092] According to a preferred embodiment of the present invention, the poly / magnetic permeable microstructure is made of high magnetic permeability materials, and the high magnetic permeability materials include elemental magnetic materials and alloy magnetic materials.

[0093] In a further preferred embodiment, the elemental magnetic material is one or more of Fe, Co or Mn, and / or

[0094] The alloy magnetic material is Mn-Zn ferrite, Sendai alloy (Fe-Si-Al), molybdenum-iron alloy (MoFe), vanadium-iron alloy (VFe), tungsten-iron alloy (WFe) or nickel-iron alloy (NiFe) one or more.

[0095] In a further preferred embodiment, the poly / magnetic permeable microstructure is made of low coercivity material, preferably nickel-iron alloy (NiFe).

[0096] Wherein, the coercive force means that after the magnetic material is saturated and magnetized, its magnetic induction intensity B does not return to zero when the external magnetic field returns to zero, and the magnetic inducti...

Embodiment 1

[0163] The following steps are used to make the magnetic field vector sensor:

[0164] Step 1, cleaning the first silicon wafer and the second silicon wafer (both are oriented p-type single crystal silicon wafers), and then growing a 650nm thick silicon dioxide layer on the upper surface of the second silicon wafer;

[0165] Step 2, using a bonding process to bond the first silicon wafer to the second silicon wafer, so that the lower surface of the first silicon wafer and the upper surface of the second silicon wafer are bonded as one;

[0166] Step 3, after bonding, thin the first silicon wafer to 10 μm, perform polishing and cleaning treatment, and then grow a thin oxide layer with a thickness of 50 nm on the upper surface of the first silicon wafer;

[0167] Step 4, perform a photolithography on the upper surface of the first silicon wafer, and implant ions for n - Type lightly doped to form the magnetically sensitive areas of the five Hall magnetic field sensors;

[016...

experiment example

[0178] Using Beijing Cuihai Jiacheng Magnetic Technology Co., Ltd.’s fully automatic Hall effect high-precision magnetic field generation system (CH-100) and other instruments to build a magnetic field sensor characteristic test system, the system can generate a magnetic induction intensity ranging from -0.8T to 0.8 T, the precision is 0.03mT. Using the above-mentioned high-precision magnetic field generating system, the magnetic field vector sensor prepared in Example 1 was tested, and the magnetic sensitivity detected by the sensor was analyzed.

[0179] It can be seen from the test that the magnetic field vector sensor prepared in Example 1 can successfully detect the magnetic induction intensity of -60mT~60mT in the space.

[0180] In addition, when the power supply voltage is 5V, the applied magnetic field is B=-60~60mT, the step size is 10mT, and the magnetic field direction is along the x-axis, y-axis and z-axis respectively, the input of the magnetic field vector senso...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a magnetic-field vector sensor, which comprises a first silicon wafer (1) and a second wafer (2), wherein the first silicon wafer (1) serves as a device layer, the second wafer(2) serves as a substrate, and the first silicon wafer (1) is provided with a plurality of same-category magnetic sensitive components which form three magnetic sensitive units so as to realize the measurement of magnetic field components of different directions. Meanwhile, a gathering / magnetic conductive micro-structure is embedded in a chip, the direction of the magnetic field component can beconverted, and the measurement of a space magnetic field is realized. The magnetic-field vector sensor has a simple structure, and the miniaturization and the integration of the chip are realized. The manufacture technology has the advantages of being simple in operation and easy in implementation, and is suitable for large-scale industrial application.

Description

technical field [0001] The invention relates to the technical field of space magnetic vector sensors, in particular to the field of low cross-interference, in particular to a magnetic field vector sensor composed of the same kind of magnetic sensitive elements and a manufacturing process thereof. Background technique [0002] With the rapid development of magnetic field sensor technology, space magnetic vector sensors with excellent static characteristics are widely used in navigation and positioning, automobile industry, deep sea detection and other fields. [0003] At present, the space magnetic vector sensor mainly has problems such as large cross-interference in each direction and poor sensitivity consistency. In order to optimize the sensor characteristic index, the same kind of magnetic sensitive components should be selected for structural design, but the same kind of magnetic sensitive components are only sensitive to the magnetic field in the same direction, and can...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/06G01R33/07
CPCG01R33/06G01R33/072
Inventor 赵晓锋李学磊温殿忠
Owner HEILONGJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com