The invention discloses a wide-beam
ion source device used for an
ion implanter. The device comprises a source
magnetic field iron core, a source
magnetic field coil, an arc chamber and an extraction
electrode, one end of the arc chamber is provided with a first filament and a first
cathode, the other end of the arc chamber is provided with a second filament and a second
cathode, the first filament and the second filament are connected with filament power supplies respectively, a first bias power supply is connected between the first filament and the first
cathode, a second bias power supply is connected between the second filament and the second cathode, a first
arc voltage power supply is connected between the first cathode and the arc chamber, and a second
arc voltage power supply is connected between the second cathode and the arc chamber. Since the arc chamber adopts an indirect-heating type double-cathode structure with double filaments and double cathodes, so that a gas medium and
hot electrons emitted by the cathodes fully collide, and a relatively wide
ion beam and relatively high beam intensity can be generated, thereby facilitating increase of the width of the
ion beam, and directly obtaining a parallel wide-band beam that covers the width of a target implantation
silicon wafer.