Grid side wall imaging method

By covering the semiconductor structure with a polycrystalline carbon layer and using oxygen-containing plasma to remove the main sidewalls, the problem of voids in the high-stress via etching stop layer is solved, the process flow is simplified and the cost is reduced, and the specific etching cavity is avoided. needs.

CN103824765AActive Publication Date: 2014-05-28SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Filing Date
2013-11-26
Publication Date
2014-05-28

AI Technical Summary

Technical Problem

In the existing high-stress through-hole etching stop layer process, the excessive thickness of the silicon nitride film causes void problems, and the existing SPT process requires a specific etching cavity, which complicates the process and increases production costs.

Method used

A polycrystalline carbon layer is used to cover the semiconductor structure, and polycrystalline carbon sidewalls are formed through partial removal. Oxygen-containing plasma is used to remove the main sidewalls, simplifying the process and reducing costs.

Benefits of technology

It effectively solves the void problem in the high-stress via hole etching stop layer process, avoids the need for a specific etching cavity, simplifies the process flow and reduces production costs.

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Abstract

The invention discloses a grid side wall imaging method. The method comprises the steps that a semiconductor structure which has a grid and a first side wall which covers the side wall of the grid is provided; a polycrystalline carbon layer is prepared to cover the surface of the semiconductor structure; the polycrystalline carbon layer is partially removed, so that a second side wall of the grid is formed on the surface of the first side wall; after a source drain implantation process is carried out on the semiconductor structure, the second side wall is removed; and a source drain annealing technology is continued. According to the grid side wall imaging method provided by the invention, through oxygenated plasma treatment, a polycrystalline carbon side wall which is used as a main side wall can be neatly removed; without using an SPT process which needs to be carried out in a specific etching cavity, the problem of void in a high stress through hole etching stop layer process can be solved; a process flow is simplified; and the production cost is reduced.
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Citation Information

Patent Citations

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