Press ring mechanism and semiconductor processing equipment

A press ring, processed technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reducing yield, damage, debris, etc., to reduce temperature, improve yield, and avoid damage.

Active Publication Date: 2020-02-14
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the application of TSV technology, since the deposited barrier layer and seed layer are thick, a long-time sputtering process is required. Under the bombardment of ions and electrons in the long-time high-energy plasma, the temperature of the pressure ring 8 will be reduced. The rapid rise will cause the part of the TSV chip in contact with the pressure ring 8 to be damaged by the high temperature pressure ring 8, or even fragments, thereby reducing the yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Press ring mechanism and semiconductor processing equipment
  • Press ring mechanism and semiconductor processing equipment
  • Press ring mechanism and semiconductor processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the ring-pressing mechanism and semiconductor processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0028] The pressing ring mechanism provided by the present invention includes a pressing ring used to fix the workpiece to be processed on the base, and an annular channel is arranged around the circumferential direction of the pressing ring, and the cooling medium can be delivered to the annular channel to realize the The pressure ring is cooled, so that the temperature of the pressure ring can be effectively reduced, thereby avoiding damage to the workpiece to be processed, thereby improving the yield rate.

[0029] In practical applications, the press ring mechanism fixes the workpiece to be processed on the base by means of mechanical fixing, and a specific implementation of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a press ring mechanism and a semiconductor processing device. The press ring mechanism comprises a press ring which fixes a processed workpiece on a pedestal, an annular channel is arranged in the press ring along the circumferential direction, and a cooling medium is transmitted via the annular channel to cool the press ring. The press ring mechanism provided by the invention can prevent the processed workpiece from damage caused by too high temperature, and the yield rate is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment manufacturing, and in particular relates to a pressing ring mechanism and semiconductor processing equipment. Background technique [0002] In the manufacturing process of integrated circuits, physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is usually used to deposit materials such as metal layers on wafers. With the widespread application of Through Silicon Via (TSV) technology, PVD technology is mainly used to deposit barrier layers and seed layers in the Through Silicon Via. Typical PVD technology, such as integrated circuit copper interconnection process, usually uses electrostatic chuck to fix the wafer, but for the deposition process of through silicon via, due to the thick film deposited in the through silicon via, the electrostatic chuck cannot be connected with the wafer Electrostatic adsorption, and when the subsequent packaging pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/687H01L21/67
Inventor郭浩杨敬山侯珏郑金果赵梦欣陈鹏
OwnerBEIJING NAURA MICROELECTRONICS EQUIP CO LTD