A full-band silicon microphone with sound beam and sound tunnel

Abstract

A full-band silicon microphone with a sound beam and a sound tunnel comprises a sensor, a sound cavity and a circuit board; the sensor comprises a diaphragm and a silicon back plate; a sound beam assembly is provided on the diaphragm, comprising a plurality of arc-shaped sound beam components, each arc-shaped sound beam component is arranged in a ring shape, and a gap is formed between two adjacent arc-shaped sound beam components; the diaphragm is also formed with an annular area and at least two radiating grooves on the surface provided with the sound beam assembly; each radiating groove is evenly arranged in a radial shape, and the diaphragm surface located outside the sound beam assembly is divided into a plurality of resonance areas; the radiating grooves are aligned with the gap between the two arc-shaped sound beam components, and the inner ends of each radiating groove are connected to the annular area; the radiating grooves are concavely arranged on the surface of the diaphragm to form a sound tunnel. The present invention changes the diaphragm from the previous free vibration mode to the current standard vibration mode, solves the problem that the silicon microphone cannot effectively resonate the full-band sound details from the perspective of vibration and resonance, and constitutes the silicon microphone to effectively resonate in the full-band to achieve a high-fidelity effect.

Description

Technical Field

[0001] The invention relates to a silicon microphone, in particular to a full-band silicon microphone with a sound beam and a sound tunnel. Background Art

[0002] Silicon microphones, also known as MEMS (Micro-Electro-Mechanical System) microphones, are microphones manufactured based on MEMS technology. They have considerable advantages over ECM in terms of miniaturization, performance, reliability, environmental tolerance, cost and mass production capacity, and have quickly occupied the market of consumer electronic products such as mobile phones, headphones, PDAs, MP3s and hearing aids.

[0003] Silicon microphones are composed of MEMS sensors, ASIC chips, sound chambers, and circuit boards with RF suppression circuits. MEMS sensors are micro-capacitors consisting of a diaphragm and a silicon back plate, which can convert sound pressure changes into capacitance changes, and then the ASIC chip converts the capacitance changes into electrical signals, realizing "sound-to-electricity" conversion.

[0004] Common problems with traditional silicon microphones are:

[0005] When the diaphragm of the silicon microphone receives sound waves from an external sound source, it has an inherent resonant frequency. If it exceeds a certain range of the resonant frequency area, the treble and bass areas will not be able to resonate effectively, resulting in the sound quality of the received sound being converted from "sound to electricity" and then restored from "electricity to sound". The treble area is not bright, and the bass area is not thick and round enough, which leads to poor sound fidelity. The main reason is that the current diaphragm cannot meet the requirements of good broadband vibration from the treble area to the bass area, that is, it cannot adapt to the wide frequency change resonance and vibration of the treble area, mid-range area and bass area at the same time. Therefore, it is impossible to collect all the sound details of the full frequency band when receiving sound. In summary, the structural design of traditional silicon microphones is unreasonable, which is not conducive to the diaphragm to exert good sound wave vibration from the treble area to the bass area.

[0006] Therefore, how to solve the above-mentioned deficiencies in the prior art has become a subject to be studied and solved by the present invention. Summary of the invention

[0007] The object of the present invention is to provide a full-band silicon microphone with a sound beam and a sound tunnel.

[0008] In order to achieve the above object, the technical solution adopted by the present invention is:

[0009] A full-band silicon microphone with a sound beam and a sound tunnel comprises a sensor, a sound cavity and a circuit board; the sensor is located in the sound cavity, and the sensor comprises a diaphragm and a silicon back plate;

[0010] Wherein, the diaphragm is provided with a sound beam assembly, the sound beam assembly is fixedly arranged on at least one side surface of the diaphragm, and defines a central area in the middle of the diaphragm; the sound beam assembly includes a plurality of arc-shaped sound beam components, each of the arc-shaped sound beam components is arranged in a ring shape around the center of the diaphragm in the horizontal direction, and a gap is formed between two adjacent arc-shaped sound beam components;

[0011] The diaphragm is also formed with an annular area and at least two radiating grooves on the same surface where the sound beam assembly is provided; the annular area is arranged around the central area and is located between the sound beam assembly and the central area; each of the radiating grooves is evenly arranged radially with the horizontal center of the diaphragm as the reference, thereby dividing the diaphragm surface located outside the sound beam assembly into a plurality of resonance areas; the radiating grooves are aligned with the gap between the two arc-shaped sound beam components one by one, the radiating grooves are penetrated in the gap, and the inner ends of each radiating groove are connected to the annular area;

[0012] Wherein, the radiation groove is recessed on the surface of the diaphragm to form a sound tunnel.

[0013] The relevant contents in the above technical solution are explained as follows:

[0014] 1. In the above solution, "the annular area is arranged around the central area and is located between the sound beam assembly and the central area". This design can help the annular area to collect the vibration of the central area of ​​the diaphragm. The annular area can be an annular groove.

[0015] 2. In the above scheme, "each of the radiating grooves is evenly arranged radially with the horizontal center of the diaphragm as the reference", which helps to quickly transmit the vibration of the central area to the surrounding areas of the diaphragm through the radial sound tunnel (i.e., the sound tunnel) formed by the radiating grooves.

[0016] 3. In the above scheme, the diaphragm is divided into a treble region in the outer section, a mid-range region in the middle section, and a bass region in the inner section from the sound frequency band; the sound beam assembly is located in the bass region; wherein the diaphragm wall thickness gradually increases from the outside to the inside, the wall thickness of the bass region is greater than that of the mid-range region, and the wall thickness of the mid-range region is greater than that of the treble region.

[0017] With this design, by setting the thicker bass area close to the center, the bass area of ​​the diaphragm can be more easily resonated with the low-frequency vibrations with lower frequency and larger amplitude, so that the restored sound will produce a thicker and rounder bass; by setting the thinner treble area far away from the center, the treble area of ​​the diaphragm can be more easily resonated with the high-frequency vibrations with higher frequency and smaller amplitude, so that the restored sound will produce a more transparent and bright treble, thereby enabling the silicon microphone to effectively resonate in the entire frequency band, so that the timbre and sound quality of the restored sound are effectively improved, achieving a high-fidelity effect.

[0018] 4. In the above solution, the radiation groove is arranged in the gap. This design is conducive to transmitting vibration through the sound tunnel, thereby being more conducive to improving the vibration response rate of the diaphragm.

[0019] 5. In the above solution, when the diaphragm is horizontal, the center line of the sound beam assembly in the vertical direction overlaps with the center line of the diaphragm in the vertical direction, so as to improve the sound quality and timbre.

[0020] 5. In the above solution, the annular area is an annular groove.

[0021] 6. In the above solution, each of the radiation grooves and the annular groove is an arc-shaped groove, which can minimize the thickness change of the diaphragm and avoid affecting the resonance and vibration of the diaphragm.

[0022] 7. In the above solution, a smooth transition surface is provided between the outer end of the radiation groove and the surface of the diaphragm.

[0023] The working principle and advantages of the present invention are as follows:

[0024] The present invention discloses a full-band silicon microphone with a sound beam and a sound tunnel, comprising a sensor, a sound cavity and a circuit board; the sensor comprises a diaphragm and a silicon back plate; a sound beam assembly is provided on the diaphragm, fixedly arranged on at least one side surface of the diaphragm, and defines a central area in the middle of the diaphragm; the sound beam assembly comprises a plurality of arc-shaped sound beam components, each arc-shaped sound beam component is arranged in a ring shape, and a gap is formed between two adjacent arc-shaped sound beam components; the diaphragm is also provided with an annular area and at least two radiating grooves on the surface of the diaphragm provided with the sound beam assembly; the annular area is arranged around the central area, and each radiating groove is evenly arranged in a radial shape, dividing the diaphragm surface located outside the sound beam assembly into a plurality of resonance areas; the radiating grooves are aligned with the gaps between the two arc-shaped sound beam components, and the inner ends of each radiating groove are connected to the annular area; the radiating grooves are recessed on the surface of the diaphragm to form a sound tunnel.

[0025] Compared with the prior art, in order to solve the problem that the existing silicon microphone cannot take into account the high, middle and low frequency ranges while having good resonance when receiving sound, the present invention improves the existing silicon microphone, especially the diaphragm design in the silicon microphone. Specifically, it is embodied in the following aspects: first, a sound beam assembly is set on the surface of the diaphragm; second, radial grooves are opened on the surface of the diaphragm, and the radial grooves form radial sound tunnels on the surface of the diaphragm.

[0026] Aiming at the problem that the high-pitched area of ​​the sound restored by the existing silicon microphone after receiving the sound is not bright, and the bass area is not thick and round enough, the present invention conducts in-depth discussion and research on the design and vibration mechanism of the silicon microphone, and finds out that the main reason for the poor vibration of the high-pitched area and the bass area of ​​the existing silicon microphone is due to the unreasonable design of the diaphragm. Based on this, the inventor broke the constraints of the previous silicon microphone composition design and boldly proposed the improved design scheme of the present invention. This improved design scheme changes the diaphragm from the previous free vibration mode to the current standard vibration mode, and solves the problem that the silicon microphone cannot effectively resonate the full-band sound details when receiving sound from the perspective of vibration and resonance, resulting in the high-pitched area of ​​the restored sound not being bright, and the bass area not being thick and round enough. Practice has proved that the improved design scheme has outstanding substantive characteristics and significant technical progress, and has achieved obvious technical effects.

[0027] Due to the application of the above technical solution, the present invention has the following advantages and effects compared with the diaphragm of the existing silicon microphone:

[0028] 1. The present invention sets a sound beam assembly on the surface of the diaphragm. Since the bass has a larger amplitude and lower frequency than the treble, the bass resonance is concentrated in the area close to the center of the diaphragm, and the treble resonance is concentrated in the surrounding edge areas of the diaphragm. The strength of the central area of ​​the diaphragm is strengthened, which plays an important role in improving the high-fidelity bass timbre and sound quality. Since the thickness of the diaphragm is a gradual thickness structure with thick central area and thin surrounding areas (i.e., thin outside and thick inside), the strength of the central area of ​​the diaphragm is strengthened, and the thickness difference between the central area of ​​the diaphragm and the surrounding edge areas is relatively changed, which can also play a beneficial role in improving the high-fidelity treble timbre and sound quality.

[0029] 2. The present invention provides radial grooves on the surface of the diaphragm, which actually form radial sound tunnels on the diaphragm. After the diaphragm receives the vibration, the sound is quickly transmitted to the edges around the diaphragm through the radial sound tunnels (i.e., sound tunnels), which plays a key role in improving the resonance of the treble region and can better receive the details of the treble band of the sound.

[0030] 3. The present invention designs the sound beam as a sound beam assembly, and in particular, a gap is designed between two arc-shaped sound beam components, so that the gap is more conducive to transmitting vibration through the sound tunnel, which is more conducive to the resonance and rapid vibration response of the diaphragm.

[0031] 4. The present invention divides the diaphragm into N resonance areas equal to the number of grooves through the design of the sound beam assembly and radial grooves. When the silicon microphone is working, the vibration is first transmitted to the central area of ​​the diaphragm, and then transmitted to each resonance area through the sound tunnel, and resonance and vibration are generated, thereby amplifying the vibration of the external sound source into the resonance of the diaphragm. Each resonance area can generate a sound wave amount, plus an original sound wave amount, a total of N+1 sound waves. The sound wave amount is the number of sound waves, and the sound wave amount directly affects the timbre and sound quality of the diaphragm. Therefore, the design of the present invention can significantly improve the timbre and sound quality of the high and low pitch areas.

[0032] 5. The sound beam assembly and the groove of the present invention can be arranged on the upper surface of the diaphragm, can also be arranged on the lower surface of the diaphragm, and can also be arranged on both the upper and lower surfaces of the diaphragm. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Attached Figure 1 This is a schematic diagram of the structure of the silicon microphone of the present invention (the sound inlet is located on the upper side);

[0034] Attached Figure 2 This is a schematic diagram of the structure of the silicon microphone of the present invention (the sound inlet is located at the bottom);

[0035] Attached Figure 3 A schematic diagram of the structure of a diaphragm in an embodiment of the present invention;

[0036] Attached Figure 4 for Figure 3 A top view of

[0037] Attached Figure 5 It is a schematic diagram of a sound beam assembly provided on the upper surface of a diaphragm according to an embodiment of the present invention;

[0038] Attached Figure 6 This is a schematic diagram of an embodiment of the present invention in which the sound beam assembly is disposed on both the upper and lower surfaces of the diaphragm.

[0039] In the above figures: 1. sound cavity; 2. circuit board; 3. diaphragm; 4. sound beam assembly; 4a. arc-shaped sound beam component; 5. shell; 6. sound inlet hole; 7. central area; 8. annular area; 9. radiation groove; 10. resonance area; 11. silicon back plate; 12. gap. DETAILED DESCRIPTION

[0040] The present invention will be further described below in conjunction with the accompanying drawings and embodiments:

[0041] Embodiment: The present invention will be clearly described below with diagrams and detailed descriptions. After understanding the embodiments of the present invention, any person skilled in the art can make changes and modifications based on the techniques taught by the present invention without departing from the spirit and scope of the present invention.

[0042] The terms used herein are only for describing specific embodiments and are not intended to be limiting of the present invention. Singular forms such as "a", "this", "here", "this" and "the" as used herein also include plural forms.

[0043] As used herein, “connected” or “positioned” may refer to two or more components or devices being in direct physical contact with each other, or being in indirect physical contact with each other, or may refer to two or more components or devices operating or moving with each other.

[0044] The terms “include,” “including,” “have,” etc. used in this document are open-ended terms, meaning including but not limited to.

[0045] The terms used in this document generally have the ordinary meaning of each term used in this field, in the context of the case and in the specific context, unless otherwise noted. Certain terms used to describe the present invention will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the present invention.

[0046] The terms "upper" and "lower" used in this article are directional terms. In this case, they are only used to illustrate the positional relationship between the structures, and are not used to limit the protection plan of this case and the specific direction during actual implementation.

[0047] See attached Figures 1 to 4 As shown, a full-band silicon microphone with a sound beam and a sound tunnel includes a MEMS sensor, a sound cavity 1 and a circuit board 2 with an RF suppression circuit; the MEMS sensor is located in the sound cavity 1, and the MEMS sensor includes a diaphragm 3 and a silicon back plate 11; the two are arranged at an interval, and the silicon back plate 11 is arranged corresponding to a sound inlet hole 6 on the silicon microphone shell 5.

[0048] Among them, a sound beam assembly 4 is provided on the diaphragm 3, and the sound beam assembly 4 is fixed on the lower surface of the diaphragm 3, and defines a central area 7 in the middle of the diaphragm 3; the sound beam assembly 4 includes a plurality of arc-shaped sound beam components 4a, and each of the arc-shaped sound beam components 4a is arranged in a ring around the center of the diaphragm in the horizontal direction, and a gap 12 is formed between two adjacent arc-shaped sound beam components 4a.

[0049] The lower surface of the diaphragm 3 is also formed with an annular area 8 and at least two radiation grooves 9; the radiation grooves 9 are recessed in the surface of the diaphragm 3 to form a sound tunnel.

[0050] The annular region 8 is arranged around the central region 7 and is located between the sound beam assembly 4 and the central region 7. This design can help the annular region 8 to collect the vibration of the central region of the diaphragm 3. The annular region 8 can be an annular groove.

[0051] Each of the radiation grooves 9 is evenly arranged radially with the horizontal center of the diaphragm 3 as the reference, which helps to quickly transmit the vibration of the central area 7 to the surroundings of the diaphragm 3 through the radial sound tunnel (i.e., the sound tunnel) formed by the radiation grooves 9. At the same time, the surface of the diaphragm 3 located outside the sound beam assembly 4 is equally divided into a plurality of resonance areas 10, and the radiation grooves 9 are aligned with the gaps 12 between the two arc-shaped sound beam components 4a one by one, and the radiation grooves 9 are arranged in the gaps 12, and the inner ends of each of the radiation grooves 9 are connected to the annular area 8.

[0052] By arranging the sound beam assembly 7 on the lower surface of the diaphragm 3, since the bass has a larger amplitude and lower frequency than the treble, the bass resonance is concentrated in the area close to the center of the diaphragm 3, and the treble resonance is concentrated in the peripheral edge areas of the diaphragm 3, thereby strengthening the strength of the central area of ​​the diaphragm 3, which plays an important role in improving the high-fidelity bass timbre and sound quality. Since the thickness of the diaphragm 3 is a gradual thickness structure in which the central area is thick and the surrounding areas are thin (i.e., a design of thin outside and thick inside), the strength of the central area of ​​the diaphragm 3 is strengthened, and the thickness difference between the central area of ​​the diaphragm 3 and the peripheral edge areas is relatively changed, which can also play a beneficial role in improving the high-fidelity treble timbre and sound quality.

[0053] By opening radial radiating grooves 9 on the lower surface of the diaphragm 3, the radial grooves 9 actually form radial sound tunnels on the surface of the diaphragm 3, and the vibrations are collected through the annular area 8, and then quickly transmitted to the edges of the diaphragm 3 around the radial sound tunnels (i.e., sound tunnels). At the same time, by equally dividing the diaphragm 3 into four resonance areas 10, the vibrations can be transmitted to the four resonance areas 10 through the sound tunnels and generate resonance, which can significantly improve the timbre of the bass and treble areas.

[0054] Preferably, the diaphragm 3 is divided into a high-pitched area in the outer section, a mid-pitched area in the middle section, and a low-pitched area in the inner section from the sound emission band. The wall thickness of the diaphragm 3 gradually increases from the outside to the inside, and the wall thickness of the low-pitched area is greater than that of the mid-pitched area, and the wall thickness of the mid-pitched area is greater than that of the high-pitched area; the sound beam assembly 4 is located in the low-pitched area, which can increase the load in the middle of the diaphragm 3.

[0055] With this design, by setting the thicker bass area close to the center, the bass area of ​​the diaphragm 3 can be more easily resonated with the low-frequency vibration with a lower frequency and a larger amplitude, so that the restored sound emits a thicker and rounder bass; and by setting the thinner treble area far from the center, the treble area of ​​the diaphragm 3 can be more easily resonated with the high-frequency vibration with a higher frequency and a smaller amplitude, so that the restored sound emits a more transparent and bright treble, thereby enabling the silicon microphone to effectively resonate in the entire frequency band, so that the timbre and sound quality of the restored sound are effectively improved, achieving a high-fidelity effect.

[0056] There is a gap 12 between the two arc-shaped sound beam components 4a, and the radiation groove 9 is arranged in the gap 12. This design is conducive to transmitting vibration through the sound tunnel, thereby being more conducive to improving the vibration response rate of the diaphragm 3.

[0057] Preferably, when the diaphragm 3 is horizontal, a center line of the sound beam assembly 4 in the up-down direction overlaps with a center line of the diaphragm 3 in the up-down direction.

[0058] Preferably, the annular groove and each of the radiation grooves 9 are arc-shaped grooves, which can minimize the thickness change of the diaphragm 3 and avoid affecting the resonance and vibration of the diaphragm 3.

[0059] A smooth transition surface is provided between the outer end of the radiation groove 9 and the lower surface of the diaphragm 3 , so that the vibration can be transmitted to the periphery of the diaphragm 3 more evenly.

[0060] The following is an explanation of other implementations and structural changes of the present invention:

[0061] 1. In the above embodiments, the silicon microphone shown in the figure is only used for illustration, and its structure is not used to limit the protection scope of the present invention. Other silicon microphones with similar structures should be covered within the protection scope of the present invention if they adopt the technical features of the present invention.

[0062] 2. In the above embodiments, the number of the sound beam assemblies 4 is not limited to one group, and may also be multiple groups arranged in parallel or other designs that help to strengthen the load on the middle part of the diaphragm 3, which is easily understood and accepted by those skilled in the art.

[0063] 3. In the above embodiments, the sound beam assembly 4, the annular area 8 and the radiation groove 9 may be located on the lower surface of the diaphragm 3 (eg Figure 4 ), or may be located on the upper surface of the diaphragm 3 (as shown Figure 5 As shown in FIG. 1 ), it can also be arranged on both the upper and lower surfaces of the diaphragm 3 (as shown in FIG. Figure 6 as shown).

[0064] 4. In the above embodiments, the annular groove and the radiating groove 9 are arc-shaped grooves. However, the present invention is not limited thereto, and the annular groove and the radiating groove 9 can be designed into other shapes, such as V-shaped, U-shaped, W-shaped and other concave structures. This is easily understood and accepted by those skilled in the art.

[0065] 5. In the above embodiments, the diaphragm 3 may be a silicon diaphragm (such as single crystal silicon, polycrystalline silicon, silicon nitride plus electrodes), or may be a diaphragm of other materials with the same or similar functions and effects.

[0066] Compared with the prior art, in order to solve the problem that the existing silicon microphone cannot take into account the high, middle and low frequency ranges while having good resonance timbre when receiving sound, the present invention improves the existing silicon microphone, especially the diaphragm design in the silicon microphone. Specifically, it is embodied in the following aspects: first, a sound beam assembly is set on the surface of the diaphragm; second, radial grooves are opened on the surface of the diaphragm, and the radial grooves form radial sound tunnels on the surface of the diaphragm.

[0067] Aiming at the problem that the high-pitched area of ​​the sound restored by the existing silicon microphone after receiving the sound is not bright, and the bass area is not thick and round enough, the present invention conducts in-depth discussion and research on the design and sound-generating mechanism of the silicon microphone, and finds out that the main reason for the poor timbre of the high-pitched area and the bass area of ​​the existing silicon microphone is due to the unreasonable design of the diaphragm. Based on this, the inventor broke the constraints of the previous silicon microphone component design and boldly proposed the improved design scheme of the present invention. This improved design scheme changes the diaphragm from the previous free vibration mode to the current standard vibration mode, and solves the problem that the high-pitched area of ​​the sound restored by the silicon microphone after receiving the sound is not bright, and the bass area is not thick and round enough from the perspective of vibration and resonance, and improves the fidelity of the sound in each frequency band. Practice has proved that the improved design scheme has outstanding substantive characteristics and significant technical progress, and has achieved obvious technical effects.

[0068] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A full-band silicon microphone with a sound beam and a sound tunnel, characterized by: It comprises a sensor, a sound cavity (1) and a circuit board (2); the sensor is located in the sound cavity (1), and the sensor comprises a diaphragm (3) and a silicon back plate (11); The diaphragm (3) is provided with a sound beam assembly (4), the sound beam assembly (4) being fixedly mounted on at least one side surface of the diaphragm (3) and defining a central area (7) in the middle of the diaphragm (3); the sound beam assembly (4) comprises a plurality of arc-shaped sound beam components (4a), each of the arc-shaped sound beam components (4a) being arranged in a ring shape around the center of the diaphragm in a horizontal direction, and a gap (12) is formed between two adjacent arc-shaped sound beam components (4a); The diaphragm (3) is also provided with an annular area (8) and at least two radiating grooves (9) on the same surface where the sound beam assembly (4) is provided; the annular area (8) is arranged around the central area (7) and is located between the sound beam assembly (4) and the central area (7); the radiating grooves (9) are evenly arranged radially with the horizontal center of the diaphragm (3) as a reference, thereby dividing the surface of the diaphragm (3) located outside the sound beam assembly (4) into a plurality of resonance areas (10); the radiating grooves (9) are aligned with the gap (12) between the two arc-shaped sound beam components (4a), the radiating grooves (9) are arranged in the gap (12), and the inner ends of the radiating grooves (9) are connected to the annular area (8); The radiation groove (9) is recessed on the surface of the diaphragm (3) to form a sound tunnel.

2. The full-band silicon microphone with sound beam and sound tunnel according to claim 1, characterized in that: The diaphragm (3) is divided into an outer high-pitched area, a middle-pitched area, and an inner low-pitched area in terms of the sound emission band; The wall thickness of the diaphragm (3) gradually increases from the outside to the inside, the wall thickness of the bass region is greater than the wall thickness of the mid-range region, and the wall thickness of the mid-range region is greater than the wall thickness of the treble region; The sound beam assembly (4) is located in the bass region.

3. The full-band silicon microphone with sound beam and sound tunnel according to claim 1, characterized in that: When the diaphragm (3) is horizontal, the center line of the sound beam assembly (4) in the up-down direction overlaps with the center line of the diaphragm (3) in the up-down direction.

4. The full-band silicon microphone with sound beam and sound tunnel according to claim 1, characterized in that: The annular area (8) is an annular groove.

5. The full-band silicon microphone with sound beam and sound tunnel according to claim 4, characterized in that: Each of the radiation grooves (9) and the annular groove is an arc-shaped groove.

6. The full-band silicon microphone with sound beam and sound tunnel according to claim 1, characterized in that: A smooth transition surface is provided between the outer end of the radiation groove (9) and the surface of the diaphragm (3).

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