Electronic device and method of manufacturing the same

Abstract

The present invention relates to an electronic device and a method for manufacturing an electronic device, the electronic device comprising: a first component carrier; a second component carrier, which is connected to the first component carrier so that a thermal decoupling gap is formed between the first component carrier and the second component carrier; a first component, which is located on the second component carrier and / or in the second component carrier; and a second component, which has a first main surface, which is mounted in the thermal decoupling gap so that at least a part of the opposite second main surface of the second component and the entire side wall are exposed relative to the material of the first component carrier and relative to the material of the second component carrier.

Description

Technical Field

[0001] The invention relates to an electronic device and a method for manufacturing the electronic device. Background Art

[0002] In the context of increasing product functionality of component carriers equipped with one or more electronic components and the miniaturization of such electronic components and an increasing number of electronic components to be mounted on component carriers such as printed circuit boards, more powerful array-like components or packages with several electronic components are being used, which have a plurality of contacts or connections with increasingly smaller spacings between them. At the same time, the component carrier should be mechanically stable and electrically reliable in order to be able to operate even under adverse conditions. It is also desirable that the component carrier be compatible with the processing of high-frequency signals. Summary of the invention

[0003] A simply manufacturable electronic device having multiple components and high thermal performance may be desired.

[0004] According to an exemplary embodiment, an electronic device is provided, which includes: a first component carrier; a second component carrier, which is connected to the first component carrier so that a thermal decoupling gap is formed between the first component carrier and the second component carrier; a first component, which is located on the second component carrier and / or in the second component carrier; and a second component, which has a first main surface, which is mounted in the thermal decoupling gap so that at least a portion of the opposite second main surface and the entire side wall of the second component are exposed relative to the material of the first component carrier and relative to the material of the second component carrier.

[0005] According to another exemplary embodiment, a method for manufacturing an electronic device is provided, wherein the method includes: providing a first component carrier; providing a second component carrier having a first component (the first component may be an embedded component or a surface-mounted component); connecting the second component carrier to the first component carrier so that a thermal decoupling gap is formed between the first component carrier and the second component carrier; and mounting a first main surface of the second component in the thermal decoupling gap so that at least a portion of an opposite second main surface of the second component and at least a portion of an entire side wall are exposed relative to a material of the first component carrier and relative to a material of the second component carrier.

[0006] Overview of implementation methods

[0007] In the context of the present application, the term "component carrier" may particularly denote any supporting structure capable of accommodating one or more components above and / or in the component carrier to provide mechanical support and / or electrical connectivity. In other words, the component carrier may be configured as a mechanical carrier and / or an electronic carrier for the components. In particular, the component carrier may be one of a printed circuit board, an organic interposer and an IC (integrated circuit) substrate. The component carrier may also be a hybrid board combining different types of component carriers of the above-mentioned types.

[0008] In the context of the present application, the term "component" may particularly denote an inlay-type component. Such a component may particularly be arranged inside or above the first component carrier and / or the second component carrier, respectively. With regard to ohmic losses, the component may particularly have an electronic function, so that the component may be a heat source. For example, such a component may be a semiconductor wafer.

[0009] In the context of the present application, the term "thermal decoupling gap" may particularly denote a cavity in the interior of an electronic device, which cavity has a portion that is thermally isolated. For example, such a cavity may not be filled with a solid material, but may be empty or filled with a gas (particularly filled with air). Thus, the thermal decoupling gap may be, for example, an air gap. In particular, a thermal decoupling gap-shaped cavity between a first component carrier and a second component carrier may be partially filled with the second component and may remain partially unfilled. In some cases, the thermal decoupling gap may be implemented or may be represented as a thermal decoupling structure, a thermal decoupling gap, a buffer gap or an isolation gap.

[0010] According to an exemplary embodiment, an electronic device or module is provided, which comprises a first component carrier (such as a substrate or a printed circuit board) and a second component carrier (such as a further substrate or a further printed circuit board) having at least one encapsulated or surface-mounted first component. At least one second component is sandwiched between the first component carrier and the second component carrier, however, there is a thermal decoupling gap between the first component carrier and the second component carrier. More specifically, the at least one second component is exposed at one main surface (opposite to the mounting surface) and the entire side wall of the at least one second component relative to the material of the second component carrier and relative to the material of the first component carrier. By taking this measure, reliable thermal decoupling can be ensured between the at least one second component (such as a heat source such as a processor chip) and the at least one first component (such as a heat sensitive unit such as a memory chip). Highly advantageously, both thermal paths between the first component and the second component in the vertical direction and in the lateral direction can be interrupted by a thermally isolating thermal decoupling gap having the above-mentioned characteristics. This prevents unwanted heating of the at least one first component by the at least one second component or unwanted heating of the at least one second component by the at least one first component. Simulations have confirmed that the air gap has a significant beneficial effect on the thermal decoupling between the first component and the second component. Thus, component failure or damage can be safely prevented while maintaining a compact configuration of the electronic device.

[0011] Hereinafter, further exemplary embodiments of the electronic device and method will be described.

[0012] The gist of the exemplary embodiment is to provide vertical and lateral thermal decoupling gaps for thermally isolating at least one first component (particularly a memory chip) packaged in or surface mounted on a second component carrier from at least one second component (particularly a processor) arranged between two component carriers (such as a PCB or an IC substrate). By taking such measures, it is particularly possible that the heat generated by the second component (particularly the processor heat) can be removed to the bottom side, away from one or more first components, via vertical connections and / or heat conducting plates (preferably made of copper). In the case where the materials of the first and second component carriers do not provide the components (particularly semiconductor wafers) with sufficient protection against the environment (e.g., protection from moisture), one or more of the components can be sealed or at least partially covered by an additional coating or barrier layer (e.g. made of parylene, polytetrafluoroethylene (PTFE)) coating, while maintaining a thermal decoupling gap or cavity for thermal isolation. The exemplary embodiment also provides methods and structures for embedding additional components to simultaneously solve the problems in terms of vertical height or module thickness. Improvements in electrical and thermal performance and improvements in reliability can be achieved. Exemplary embodiments are particularly useful for combining thermal isolation and thermal decoupling gaps of thermal channels with appropriate thermal management and embedding with components to keep the vertical height of the electronic device small. An electronic device (e.g., a package stack, a PoP structure) according to an exemplary embodiment can use a back side cavity of a top substrate or package or an additional connection body (such as a spacer frame), which has an integrated hole (e.g., a through hole) or opening for defining a thermal decoupling gap. In a descriptive sense, the connection body can be used as an electromechanical interconnect. Layer bonding methods (e.g., thermal compression bonding of copper pads with or without solder caps) can also be implemented to streamline the manufacturing process and keep the vertical thickness of the electronic device small.

[0013] Embodiments provide a method and an electronic device to thermally isolate a first component (e.g., a memory chip) on the top of an electronic device from another second component (e.g., a processor or a heat source) located on the bottom side of the first component, and ensure that heat is removed along a lateral and vertical heat removal path to avoid undesirable overheating of the component. In addition, the electronic device can reduce the height in the vertical direction by optionally embedding at least one other component (e.g., a power management integrated circuit, one or more passive components, etc.) into the first component carrier. In particular, a thermal decoupling gap can be formed vertically and laterally along the second component arranged between the first component carrier and the second component carrier for thermal isolation of the first component (e.g., a memory). The height of the electronic device can be very small, while also allowing the electronic device to maintain a small footprint on a horizontal plane, so that the space occupied by the electronic device on the mounting base (e.g., a PCB motherboard) remains small. By connecting the chip-type component (e.g., a processor, a memory) as late as possible during the manufacturing process, a high yield can be achieved at a lower cost.

[0014] In an embodiment, the first main surface of the second component is mounted on the first component carrier. When the mechanical connection portion of the second component is mounted on the first component carrier, and the first component carrier is to be mounted on a mounting base such as a motherboard PCB, the mechanical connection portion of the second component can also simultaneously establish a short vertical electrical connection with the first component carrier.

[0015] In an embodiment, the first component carrier comprises a connected stack, in particular a laminated stack, which comprises at least one electrically conductive layer structure and / or at least one electrically insulating layer structure. In the context of the present application, the term "layer structure" may particularly denote a continuous layer, a patterned layer or a plurality of non-continuous islands in the same plane. The configuration of the first component carrier as a laminated stack may provide a stable bottom portion of the electronic device and provide appropriate electrical connections in the vertical direction with low labor and high compactness. Arranging the first component carrier as a laminated stack may also allow the components to be embedded in the first component carrier with a smaller footprint, thereby further increasing the thickness of the electronic device.

[0016] In an embodiment, the first component is embedded in a molding compound on the second component carrier. By molding and encapsulating the first component, the second component carrier can be manufactured with low labor. In particular, a set of first components can be mounted on top of a second set of components to form a single three-dimensional package. The first component and the second component can be at least partially separated by a cavity, i.e. a thermal decoupling gap.

[0017] In an embodiment, the second component carrier comprises a connected, in particular laminated, stack of components comprising at least one electrically conductive layer structure and / or at least one electrically insulating layer structure, wherein the first component is embedded in the stack or surface mounted on the stack. Thus, the second component carrier can alternatively be configured as a laminate package, such as a PCB.

[0018] In an embodiment, the entire second main surface of the component is exposed relative to the material of the first component carrier and relative to the material of the second component carrier. This can ensure a particularly pronounced thermal decoupling between the first component and the second component.

[0019] In an embodiment, at least one of the first component and the second component is a semiconductor chip. The semiconductor chip or wafer is particularly thin in the vertical direction, so it can help the contact design of the electronic device in the vertical direction. However, the first component and the second component can also be other components, such as passive components (for example, manufactured with ceramic technology).

[0020] In an embodiment, the first component is a memory chip for storing data. A plurality of such memory chips may be arranged side by side and / or stacked vertically. The memory chips may be sensitive to overheating, but the memory chips may be reliably protected from being overheated by the heat generated by the processor-type second component by the thermal decoupling gap and / or by appropriately directing the heat generated by the second component away from the top-side first component and toward the bottom-side first component carrier. However, in another embodiment, the first component may be one or more image sensors or may be any other kind of sensor (e.g., a gas sensor) exposed to the environment.

[0021] In an embodiment, the second component is a processor chip. During operation of the electronic device, such a processor chip can be a significant heat source. However, this heat can be effectively removed from the electronic device to the bottom side by one or more redistribution layers and the electrically conductive layer structure of the first component carrier. This heat can be prevented from excessively propagating upward to one or more first components of the second component carrier by the described thermal decoupling gap configuration.

[0022] In an embodiment, the second component carrier comprises a recess at the side facing the first component carrier for at least partially accommodating the second component and defining a thermal decoupling gap. Such a recess can allow the second component to be accommodated in the recess while maintaining a thermally isolating thermal decoupling gap. Closing of such a recess (in particular gas-tight closing) can be achieved by the first component carrier closing the recess from the bottom side. The correspondingly formed cavity can be used simultaneously for accommodating the second component and for providing a thermal decoupling gap.

[0023] In an embodiment, the electronic device comprises a connection body, which is connected between the first component carrier and the second component carrier and has an opening (in particular a through hole, alternatively a blind hole, or an outward hole) that at least partially accommodates the second component and defines or supplements the thermal decoupling gap. For example, such a connection body can be manufactured in PCB or substrate technology, that is, it can be a laminate with a central hole. This can allow the thermal decoupling gap to be precisely defined, while the connection body can be manufactured with a low amount of labor. For example, the connection body can be annular or ring-shaped.

[0024] In an embodiment, the connection body comprises at least one vertical through-connection, which is filled with an electrically conductive material and electrically connects the first component to the second component. Such a vertical through-connection can be a via filled with copper, which is formed in particular by laser drilling or mechanical drilling and filled with the electrically conductive material by electroplating. With such one or more vertical through-connections, an electrical connection between the first component carrier, the second component carrier and the component can be achieved without excessive heat flowing from the second component to the first component during operation.

[0025] In an embodiment, the electronic device includes a coating (such as a thin film) that at least partially coats the exposed surface of the second component. For example, the coating may include a high thermal conductivity coating (such as copper) and / or a protective coating (such as an anti-corrosion coating such as a hydrophobic coating, a migration-inhibiting coating, a chemical-resistant or gas-resistant coating, a high breakdown voltage protective coating, an electrostatic discharge (ESD) coating, etc.). For example, an anti-corrosion coating can avoid, for example, corrosion and debris contamination in an open cavity. By coating the second component with an anti-corrosion material, the second component can be reliably prevented from being contaminated by moisture. The high thermal conductivity coating can facilitate the removal of heat from the second component to avoid overheating the second component. Therefore, coating the second component with a material with high thermal conductivity, such as copper, can allow heat to be effectively removed from the second component, preferably mainly via the first component carrier on the bottom side. This can prevent undesirable overheating of the second component with a lower amount of labor.

[0026] In an embodiment, at least a portion of the sidewalls of the connection body defining the thermal decoupling gap comprises a coating. Such a coating may be provided in addition to or alternatively to the coating of the second component. Coating the sidewalls of the connection body (instead of coating the second component itself or in addition to coating the second component itself) may increase the design freedom of the circuit designer. The coating of the sidewalls of the connection body may be functionalized in a corresponding manner as described above for the coating of the second component, i.e. in particular may be a coating with high thermal conductivity and / or an anti-corrosion coating. For example, the sidewall may be a continuous metal ring, which contributes to improved thermal performance.

[0027] Preferably, additional metallization may cover the sidewalls and top of the processor package for lateral and sidewall-based heat spreading or heat removal.

[0028] In an embodiment, the electronic device comprises at least one third component embedded in the first component carrier. Embedding such at least one additional third component in the first component carrier, rather than surface mounting the at least one additional third component in the first component carrier, can contribute to a compact vertical design of the electronic device. In addition, this can promote improved performance, improved power delivery (e.g., decoupling caps), and / or improved reliability.

[0029] In an embodiment, the third component includes at least one selected from a passive component and a power supply controller. For example, such a passive component may be a capacitor, an inductor, a resistor, an integrated passive device (IPD), or an antenna. The power supply controller may, for example, adjust the voltage supply according to the requirements of one or more semiconductor chips of the electronic device. The third component may also be an active component.

[0030] In an embodiment, the electronic device includes one or more fourth components embedded in the above-mentioned connection body. For example, the fourth component may include a passive component, such as a capacitor. Through this embodiment, other unused areas of the connection body can also be effectively utilized to embed one or more additional components, thereby further reducing the occupied space of the device.

[0031] In an embodiment, the second component carrier comprises a plurality of first components embedded in the second component carrier and / or surface mounted on the second component carrier. At least some of the first components can be arranged side by side, thereby promoting a compact vertical configuration of the electronic device. Additionally or alternatively, some of the third components can be stacked (preferably directly stacked) to obtain high functionality with limited occupied space.

[0032] In an embodiment, the first component carrier includes at least one post (e.g., at least one copper post) located on the exposed main surface for establishing an electrical connection between the electronic device and the mounting board. Highly advantageously, such a post contributes much less to the vertical thickness of the electronic device than bulky solder bumps. Although solder bumps may also be used in other embodiments, in order to obtain a compact configuration, it may be a preferred option to achieve electrical connection through a post (particularly a copper post).

[0033] In an embodiment, the first component carrier includes a redistribution layer located on the exposed main surface. Additionally or alternatively, the first component carrier may include another redistribution layer located at the main surface facing the second component. Such a redistribution layer can achieve two functions. First, such one or more redistribution layers can redistribute the electrical connection structure and can therefore be used to fan out the signal. In other words, the redistribution layer can be an electrically conductive transfer structure that transfers between a smaller-sized chip in the chip world and a larger-sized PCB in the PCB world. Secondly, such one or more redistribution layers can also help remove heat from the second component (which may be the most important heat source in the embodiment of the electronic device) and keep the heat significantly away from one or more first components, so it can help to guide the bottom side of the heat.

[0034] In an embodiment, the second component carrier comprises a redistribution layer at the main surface facing the first component carrier.A further redistribution layer on the bottom side of the second component carrier may ensure a proper electrical connection between the first component carrier and the second component carrier, optionally via a connection body.

[0035] In an embodiment, the copper volume percentage of at least one of the one or more redistribution layers of the first component carrier may be at least 1 volume %, in particular at least 10 volume %, more particularly at least 50 volume %. As described, the higher the copper content in the one or more redistribution layers of the first component carrier, the greater the heat removal capacity of the corresponding redistribution layer, due to the extremely high thermal conductivity of copper. With the mentioned significant copper contribution, the removal of heat from the second component out of the electronic device can be strongly promoted, while the risk of overheating of one or more first components due to the thermal path in the upward direction is reduced. In order to obtain the advantageous effect, it is advantageous when the first component carrier comprises a redistribution layer with an effective thermal conductivity in the horizontal plane in the range of 5 W / mK to 20 W / mK, in particular in the range of 10 W / mK to 15 W / mK. The mentioned thermal conductivity values ​​may relate to a homogenized or average thermal conductivity, i.e. an effective thermal conductivity provided by the electrically conductive material and the non-electrically conductive material. Additionally or alternatively, the first component carrier may include at least one redistribution layer having an effective thermal conductivity in the vertical direction in the range of 2 W / mK to 10 W / mK, in particular in the range of 3 W / mK to 8 W / mK. For the avoidance of doubt, the thermal conductivity values ​​are provided for illustrative purposes only. Actual figures according to embodiments of the present invention may also be higher or lower. For example, the thermal conductivity of the redistribution layer may be dominated by copper having significantly higher thermal conductivity values ​​compared to dielectric laminate materials such as epoxy resins or polyimides. Descriptively, since a large portion of the copper material of the redistribution layer may be provided in the form of a planar patterned copper foil having in many cases a higher number of vertical through-connections of copper, such as copper-filled laser vias, the thermal conductivity in the horizontal plane of the first component carrier may be greater than the thermal conductivity in the thickness direction of the first component carrier.

[0036] In an embodiment, the first component carrier includes a heat removal structure located between the first main surface of the second component and the exposed main surface of the first component carrier, and the heat removal structure is used to remove heat from the second component through the exposed main surface of the first component carrier. Heat can be effectively removed from the interior of the electronic device in a well-controlled path downward, i.e., from the second component toward the first component carrier, rather than being mainly propagated upward to the first component. To this end, from the description, the thermal decoupling gap can face the second component carrier rather than the first component carrier. In particular, the heat removal structure can be formed by at least one non-electrically connected vertical through-connection portion of the first component carrier filled with a heat conductive material (such as copper). In the absence of electrical functions in the bottom processor board, improved heat removal performance can be achieved by such one or more additional thermal vias.

[0037] In an embodiment, the method comprises mounting the first main surface of the second component on the first component carrier just before connecting the first component carrier to the second component carrier or before connecting the first component carrier to the second component carrier. Thus, the production of the electronic device can be based on the principle of chip-later mounting, in particular when very expensive second components are involved in many cases.

[0038] For example, the method may include coating the second component with the coating after mounting the second component on the first component carrier. For example, coating the second component may be accomplished by sputtering, physical vapor deposition (PVD), chemical vapor deposition (CVD) or any other suitable deposition process.

[0039] In an embodiment, the method comprises connecting a first component carrier to a second component carrier by thermocompression, optionally using a connecting body located between the first component carrier and the second component carrier. Thermocompression bonding may correspond to the bonding of two metal structures, which bonding may be carried out in particular by atomic contact by simultaneous application of force and heat. Due to atomic movement, atomic contact between the surfaces promotes diffusion that occurs in thermocompression bonding. Atomic interactions may bond the interfaces together. Thermocompression bonding may be provided by a non-conductive film arranged between the two connecting surfaces. Accordingly, the method may comprise connecting the first component carrier and the second component by thermocompression.

[0040] In an embodiment, the first component carrier and / or the second component carrier comprises a stack having at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of one or more electrically insulating layer structures and one or more electrically conductive layer structures as mentioned, formed in particular by applying mechanical pressure and / or thermal energy. The mentioned stack can provide a plate-like component carrier that can provide a large mounting surface for further components and yet is very thin and compact.

[0041] In an embodiment, the first component carrier and / or the second component carrier is formed as a plate. This contributes to a compact design, wherein the component carrier still provides a large base for mounting components on the component carrier. Furthermore, in particular, for example, bare chips as an example of embedded electronic components can be easily embedded in thin plates such as printed circuit boards due to their small thickness. The plate-shaped component carrier also ensures short electrical connection paths, thus suppressing signal distortion during transportation.

[0042] In an embodiment, the first component carrier and / or the second component carrier is configured to include one selected from the group consisting of: a printed circuit board, a substrate (in particular an IC substrate) and an interposer.

[0043] In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a plate-like component carrier formed by laminating several electrically conductive layer structures with several electrically insulating layer structures, for example by applying pressure, laminating by supplying heat energy as required. As a preferred material for PCB technology, the electrically conductive layer structure is made of copper, while the electrically insulating layer structure may include resin and / or glass fiber, so-called prepreg material or FR4 material. Through holes passing through the laminate are formed by, for example, laser drilling or mechanical drilling, and the through holes are filled with electrically conductive material (particularly copper) to form vias as through-hole connections, and the electrically conductive layer structures can be connected to each other in a desired manner. In addition to one or more components that can be embedded in the printed circuit board, the printed circuit board is generally constructed to accommodate one or more components on one surface or two opposite surfaces of the plate-like printed circuit board. The one or more components can be connected to the corresponding main surface by welding. The dielectric part of the PCB may include a resin with reinforcing fibers (such as glass fibers).

[0044] In the context of the present application, the term "substrate" may particularly denote a small component carrier, which may, for example, have substantially the same size as a component (particularly an electronic component) to be mounted on the small component carrier. More specifically, a substrate may be understood as a carrier for electrical connection or electrical network and a component carrier comparable to a printed circuit board (PCB), however, the density of the lateral and / or vertically arranged connections of the substrate is quite high. The lateral connection is, for example, a conductive path, and the vertical connection may, for example, be a drill hole. These lateral and / or vertical connections are arranged in the substrate and may be used to provide electrical and / or mechanical connections between a contained component or an uncontained component (e.g., a bare chip), particularly an IC chip, a back side cover (LSC) and / or a wafer side cover (DSC) and a printed circuit board or an intermediate printed circuit board. Therefore, the term "substrate" also includes an "IC substrate". The dielectric portion of the substrate may include a resin having reinforcing particles (e.g., reinforcing balls, particularly glass balls).

[0045] The substrate or interposer may include or consist of at least one layer of glass, silicon (Si), or a photoimageable or dry-etchable organic material such as an epoxy-based build-up material (e.g., an epoxy-based build-up film) or a polymer composite such as polyimide, polybenzoxazole, or benzocyclobutene. This may refer to the core and / or one or more build-up layers.

[0046] In an embodiment, the at least one electrically insulating layer structure comprises at least one of the following: a resin (such as a reinforced resin or a non-reinforced resin, for example an epoxy resin or a bismaleimide-triazine resin), a cyanate ester, a polyphenylene derivative, a glass (particularly glass fibers or spheres, multilayer glass, a glass-like material), a prepreg material (such as FR-4 or FR-5), a polyimide, a polyamide, a liquid crystal polymer (LCP), an epoxy-based laminated film, polytetrafluoroethylene (Teflon), a ceramic, and a metal oxide. Reinforced materials such as meshes, fibers or spheres made of glass (multilayer glass) may also be used. Although prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials may also be used, particularly epoxy-based laminated films or photoimageable dielectric materials. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers and / or cyanate ester resins, low temperature co-fired ceramics (LTCC) or other low DK materials, very low or ultra-low DK materials may be implemented as an electrically insulating layer structure in a component carrier.

[0047] In an embodiment, any of the above mentioned electrically conductive layer structures comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium and tungsten. Although copper is generally preferred, other materials or other types of coatings thereof are also possible, in particular the electrically conductive layer structure is coated with a superconducting material such as graphene.

[0048] In an embodiment, any of the above-mentioned components may be: a non-conductive inlay, a conductive inlay (e.g. a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g. a heat pipe), a light guiding element (e.g. an optical waveguide or optical conductor connector), an optical element (e.g. a lens), an electronic component or a combination thereof. For example, the component may be an active electronic component, a passive electronic component, an electronic chip, a storage device (e.g. a DRAM or other data storage), a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a light emitting diode, an optocoupler, a voltage converter (e.g. a DC / DC converter or an AC / DC converter), a cryptographic component, a transmitter and / or a receiver, an electromechanical converter, a sensor, an actuator, a microelectromechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductor, a battery, a switch, a camera, an antenna, a logic chip, and an energy harvesting unit. However, other components may also be embedded in the component carrier. For example, a magnetic element may be used as a component. Such a magnetic element may be a permanent magnetic element (e.g. a ferromagnetic element, an antiferromagnetic element, a multiferromagnetic element, or a ferrimagnetic element, such as a ferrite core) or may be a paramagnetic element. However, the component may also be a substrate, an interposer or another component carrier, for example in a board-in-board configuration. The component may be surface mounted on the component carrier and / or may be embedded in the interior of the component carrier. Furthermore, other components may also be used as components, in particular those which generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment.

[0049] In an embodiment, the first component carrier and the second component carrier are laminated component carriers. In such an embodiment, the component carrier is a composite of a multilayer structure that is stacked and connected together by applying pressing force and / or heat.

[0050] After processing the inner layer structure of the first component carrier and the second component carrier, one or both opposite main surfaces of the processed layer structure can be covered (in particular by lamination) symmetrically or asymmetrically with one or more further electrically insulating layer structures and / or electrically conductive layer structures. In other words, the accumulation can continue until the desired number of layers is obtained.

[0051] After the formation of the stack having the electrically insulating layer structure and the electrically conductive layer structure has been completed, the resulting layer structure or component carrier can be subjected to a surface treatment.

[0052] In particular, with regard to surface treatment, an electrically insulating solder resist may be applied to one or both opposing major surfaces of a layer stack or component carrier. For example, a solder resist may be formed over the entire major surface and then the solder resist layer may be patterned to expose one or more electrically conductive surface portions that will be used to electrically connect the component carrier to an electronic peripheral. Surface portions of the component carrier that remain covered with the solder resist, in particular those containing copper, may be effectively protected from oxidation or corrosion.

[0053] As far as surface treatment is concerned, a surface finishing portion may also be selectively applied to the exposed electrically conductive surface portions of the component carrier. Such a surface finishing portion may be an electrically conductive covering material on an exposed electrically conductive layer structure (such as a pad, a conductive trace, etc., particularly comprising or consisting of copper) on the surface of the component carrier. If such an exposed electrically conductive layer structure is not protected, the exposed conductive component carrier material (particularly copper) may be oxidized, thereby reducing the reliability of the component carrier. The surface finishing portion may then be formed, for example, as a joint between a surface mounted component and the component carrier. The surface finishing portion has the function of protecting the exposed electrically conductive layer structure (particularly a copper circuit) and realizes a joining process with one or more components, for example by welding. Examples of suitable materials for the surface finishing portion are OSP (organic solderability preservative), chemical nickel immersion gold (ENIG), gold (particularly hard gold), chemical tin, nickel gold, nickel palladium, etc. Examples of suitable materials for the surface finishing portion of IC substrates in particular are chemical nickel electroless palladium immersion gold (ENEPIG), chemical nickel electroless palladium immersion gold (ENIPIG) and tin plating. Other examples of suitable materials for surface finishing, in particular of printed circuit boards, are nickel-free surface finishes, such as electroless palladium autocatalytic gold (EPAG) and immersion silver gold (ISIG). BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 A cross-sectional view of an electronic device according to an exemplary embodiment is shown.

[0055] Figure 2 A cross-sectional view of a laminated second component carrier according to an exemplary embodiment is shown, wherein the annular connecting body serves as a top part of an electronic device.

[0056] Figure 3 A cross-sectional view of a first component carrier according to an exemplary embodiment is shown, wherein embedded passive components serve as a bottom part of an electronic device.

[0057] Figure 4A cross-sectional view of a first component carrier according to an exemplary embodiment is shown, wherein embedded passive components and components surface mounted on the embedded passive components and an annular connection body serve as a bottom part of an electronic device.

[0058] Figure 5 A cross-sectional view of an electronic device according to another exemplary embodiment is shown.

[0059] Figure 6 A cross-sectional view of a bottom portion of an electronic device according to an exemplary embodiment is shown.

[0060] Figure 7 A cross-sectional view of a bottom portion of an electronic device according to another exemplary embodiment is shown.

[0061] Figure 8 A cross-sectional view of component parts of an electronic device according to an exemplary embodiment before connection is shown.

[0062] Fig. 9 , Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 and Fig.19 A cross-sectional view showing a structure obtained during performance of a method of manufacturing an electronic device according to an exemplary embodiment.

[0063] Fig. 20 Simulation results of an electronic device according to an exemplary embodiment are shown and illustrate improved thermal decoupling between a component in a second component carrier and another component in a thermal decoupling gap.

[0064] Fig.21 and Fig. 22 A cross-sectional view of an electronic device according to another embodiment is shown.

[0065] Fig.23 , Fig.24 and Fig.25 A cross-sectional view of components of an electronic device according to an exemplary embodiment is shown, and a method of manufacturing the electronic device is schematically illustrated. DETAILED DESCRIPTION

[0066] The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.

[0067] The illustrations in the drawings are presented schematically. In different drawings, similar or identical elements are provided with the same reference signs.

[0068] Before referring to the drawings, in which exemplary embodiments will be described in further detail, some basic considerations based on developed exemplary embodiments of the invention will be summarized.

[0069] In particular, conventional package stacking (PoP) structures for mobile phones have two main architectures. Application processors can be based on wafer-level packaging processing, which uses materials and processes from the back end of the online semiconductor industry. These materials (i.e., epoxy resin molding compounds) are limited in thermal conductivity and add different functions (such as electromagnetic shielding, signal stability, power supply) to the package. The second type has a processor mounted on a substrate with a flip chip, such as an overmolding for protection. Since the number of input and / or output terminals of the semiconductor chip commonly used for the processor is large, these substrates can be made of ABF (Ajinomoto stacking film) using a semi-additive process. In both cases, the processor is completely encapsulated by a molding material that exhibits poor thermal conductivity. Therefore, the heat generated during the operation of the processor can be easily transferred to the top component carrier that usually includes a memory, and vice versa. In addition, further miniaturization in the second component carrier and improvements in power transfer are also required. The lateral space is limited, so the integrated circuit components must be stacked in the package stack, which in turn increases the vertical height. Furthermore, it may be desirable to provide an electronic device in which the most expensive components (e.g., processor, memory) can be integrated late in the manufacturing process, particularly as the last chip installed, to avoid yield risks and associated losses.

[0070] According to an exemplary embodiment, an electronic device (e.g., configured as a package on a packaging structure) is provided, the electronic device having a thermal decoupling gap located between a top side component carrier and a bottom side component carrier for providing thermal isolation in both lateral and vertical directions between vertically spaced components and ensuring heat removal along the desired vertical and lateral directions. Such a heat removal path can preferably be oriented away from the components to avoid undesirable heating of the components. Preferably, the thermal decoupling gap can be arranged vertically between the components, i.e., can be vertically away from the first component carrier. The thermal decoupling gap can also circumferentially surround the entire side wall of the component accommodated in the thermal decoupling gap to further promote heat removal in a downward direction toward the first component carrier rather than in an upward direction toward the component embedded in the second component carrier.

[0071] In addition, exemplary embodiments may provide thermal (e.g., copper) vias and (e.g., copper) lines to facilitate heat removal in a desired direction. Thus, both the bottom component carrier and the top component carrier may be thermally separated, resulting in improved performance of the electronic device. In the case where the first component carrier (e.g., a PCB or IC substrate) and the second component carrier do not provide adequate protection for the components from adverse environmental (e.g., moisture) effects, an additional coating or barrier layer may be used to seal the corresponding one or more components while maintaining thermal isolation of the air cavity. The compact configuration may be further enhanced by embedding the components into the interior of the electronic device rather than surface mounting the components in the interior of the electronic device. The vertical thickness of the electronic device may be further reduced by implementing the connection terminals at the bottom side of the electronic device as electrically conductive posts rather than solder bumps for electrical connection to an electronic environment (e.g., a mounting base, such as a printed circuit board).

[0072] In particular, a thermal decoupling gap that can function both in the horizontal plane and in the vertical direction can be provided for thermal isolation of temperature-sensitive components (such as one or more memory chips, one or more image sensors, one or more photonic ICs, etc.) relative to heat-generating components (such as a processor). For example, the heat of the processor can be removed by a bottom vertical connection and / or a plate made of a material with high thermal conductivity, such as copper. It may be advantageous to install the heat-sensitive components at a late stage of the manufacturing process (e.g., according to a chip-last-architecture) to keep the thermal impact on the heat-sensitive components during manufacturing as small as possible.

[0073] Figure 1 A cross-sectional view of an electronic device 100 according to an exemplary embodiment is shown.

[0074] The electronic device 100 includes a first component carrier 102 located at the bottom side, which can be implemented as an IC (integrated circuit) substrate or a printed circuit board (PCB). Therefore, the first component carrier 102 can be a plate-shaped laminated layer stack 118 including a plurality of electrically conductive layer structures 120 and a plurality of electrically insulating layer structures 122. For example, the electrically conductive layer structure 120 can include a patterned copper structure and a vertical through-connection portion such as a laser via filled with copper. The electrically insulating layer structure 122 can include a resin (such as an epoxy resin) and reinforcing particles (such as glass fibers or glass balls) optionally located in the resin. For example, the electrically insulating layer structure 122 can be made of FR4 or ABF. In addition, the first component carrier 102 includes a plurality of vertical through-connections 190 filled with copper that are not electrically connected, and the vertical through-connections 190 are used to remove heat from the second component 110 described below to the bottom surface of the electronic device 100. Therefore, the vertical through-connection portion having no electrical function and no electrical connection to the components 108, 110 can be used as a thermal via, which is filled with a high thermal conductivity material such as copper. Therefore, the vertical through-connection portion 190 can remove heat from the second component 110 toward the bottom area of ​​the electronic device 100, and thereby also suppress the propagation of undesired heat toward the component 108 described below.

[0075] As shown, the bottom surface of the first component carrier 102 is provided with a plurality of electrically conductive posts 136 (e.g., copper posts). At the exposed lower main surface of the first component carrier 102 provided with the posts 136, the electrical connection of the electronic device 100 with a mounting board (not shown, e.g., a PCB motherboard) can be realized in a vertically compact manner.

[0076] As in Figure 1 As can also be seen in the figure, the first component carrier 102 comprises a central core 150 (e.g. made of a fully cured material such as FR4) or a multilayer structure, on each of the two opposite main surfaces of which a respective redistribution layer 137 and a further redistribution layer 138 are arranged, wherein the redistribution layer 137 is arranged at the exposed main surface and the further redistribution layer 138 is arranged at the main surface facing the second component carrier 104, which will also be described below. From the description, each of the redistribution layers 137, 138 provides, on the one hand, a transition between the smaller-sized pads of the various illustrated components 108, 110, 134 and the larger-sized first component carrier 102.

[0077] As from Figure 1It can also be seen that the upper part of the electronic device 100 is formed by the second component carrier 104, which is vertically connected to the first component carrier 102 via a frame-shaped connecting body 126 located between the second component carrier 104 and the first component carrier 102. The connection is realized so that a thermal decoupling gap 106 is formed between the first component carrier 102 and the second component carrier 104 in the vertical direction of the connecting body 126. The thermal decoupling gap 106 can be a void area or a hollow space or cavity located inside the electronic device 100 without solid material and can be filled with air, for example (but not necessarily). From the top side, the thermal decoupling gap 106 is defined by the bottom surface of the second component carrier 104. From the bottom side, the thermal decoupling gap 106 is defined by the top surface of the first component carrier 102. Laterally, the thermal decoupling gap 106 is defined by the connecting body 126. The second component 110 is accommodated in the thermal decoupling gap 106 such that the upper portion and the side portion of the thermal decoupling gap 106 , ie, the circumferential gap, are maintained.

[0078] Figure 1 It is also shown that the first component 108 can be embedded in (or surface mounted on) the second component carrier 104. As shown, the first component 108 can be arranged in a flip chip configuration, or can alternatively be arranged by bonding wires (not shown). The first component 108 is implemented here as a temperature-sensitive memory chip. The first component 108 is embedded in the mold compound 124 of the second component carrier 104. Therefore, the second component carrier 104 is implemented here as a molded package with a redistribution layer, but can also include another packaging material, such as a laminate material.

[0079] Furthermore, a second component 110 (embodied here as a heat generating processor chip) is provided, which has a lower first main surface 112, which is mounted in the thermal decoupling gap 106 and is mechanically and electrically connected to the first component carrier 102. As shown, the diametrically opposite upper second main surface 114 of the second component 110 as well as the complete sidewall 116 are exposed with respect to the material of the first component carrier 102 and with respect to the material of the second component carrier 104. In other words, an air space is provided inside the electronic device 100, so that the second main surface 114 of the second component 110 is thermally decoupled from the second component carrier 104 and the sidewall 116 of the second component 110 is also thermally decoupled from the second component carrier 104. Both the second main surface 114 and the sidewall 116 are not covered by the material of the first component carrier 102 or the material of the second component carrier 104. By taking this measure, the heat flow from the second component 110 to the first component 108 is largely impeded, so that the temperature-sensitive first component 108 is protected from overheating of the second component 110 during operation of the electronic device 100. As already mentioned, the first main surface 112 of the second component 110 is mounted on the first component carrier 102. The mounting is realized such that the pads 152 (alternatively the pillars) of the second component 110 are electrically connected to the electrically conductive layer structure 120 of the first component carrier 102.

[0080] As mentioned, the electronic device 100 includes a connection body 126 which is vertically connected between the first component carrier 102 and the second component carrier 104 and has a through hole for accommodating the second component 110 and laterally defining the thermal decoupling gap 106 (see Figure 2 128 in the figure). The connection body 126 is used to provide a z-axis connection and helps to define the thermal decoupling gap 106. For example, the electrically insulating material of the connection body 126 through which the metal vertical through-connection 130 extends can be FR4, glass, ceramic or ABF. The vertical through-connection 130 establishes an electrical connection between the second component carrier 104 and the first component carrier 102, more precisely between the first component 108 and the second component 110.

[0081] As also shown, the connection body 126 includes a vertical through-connection 130 that electrically couples the first component 108 with the second component 110. The vertical through-connection 130 may be a via filled with copper. More specifically, the vertical through-connection 130 in the connection body 126 is connected to a redistribution layer 138 located on the top side of the first component carrier 102 and to another redistribution layer 139 located at the bottom side of the second component carrier 104. As a result, an electrically conductive path may be formed from the first component 108 via a pad 154 of the first component 108, via the vertical through-connection 130, via the redistribution layer 138, optionally via the electrically conductive layer structure 120 of the first component carrier 102, to the pad 152 of the second component 110.

[0082] As an alternative to providing a connection body 126, the second component carrier 104 may include a recess for accommodating the second component 110 and defining a thermal decoupling gap 106 (not shown) at the bottom side facing the first component carrier 102. In such an embodiment, the first component carrier 102 and the second component carrier 104 may be directly connected to each other, i.e., without the connection body 126.

[0083] In addition, one or more third components 134 may be embedded in the first component carrier 102. For example, the third component 134 may be a passive component (e.g., a capacitor, an inductor, etc.), a power supply controller (e.g., for adjusting the supply voltage so that the voltage is suitable for the components 108, 110), etc., and the pads 156 of the one or more third components 134 may be electrically coupled to the first component 108 and the second component 110 via the redistribution layers 137, 138 and / or other electrically conductive layer structures 120 of the first component carrier 102. By embedding the third component 134 in the first component carrier 102, rather than surface-mounting the third component 134 on the first component carrier 102, a vertically compact configuration of the electronic device 100 may be obtained.

[0084] As shown, the exposed surface of the second electronic component 110 within the thermal decoupling gap 106 can be covered with a coating 132. Preferably, the coating 132 can be a coating with high thermal conductivity, such as a sputtered copper layer. Additionally or alternatively, the coating 132 can be made of a protective (e.g., anti-corrosion) material (such as PTFE) to prevent moisture from reaching the sensitive second electronic component 110.

[0085] Preferably, the redistribution layers 137, 138, which may include an electrically conductive material (preferably copper) and an electrically insulating material (e.g., epoxy resin or polyimide), may be rich in copper. Advantageously, at least 10% by volume, and preferably at least 50% by volume, of the material of a respective one of the redistribution layers 137, 138 may be copper. Copper has a very high thermal conductivity and can therefore effectively remove heat from the second component 110 (in particular, a heat source such as a processor) to the bottom side of the electronic device 100, thereby keeping the heat away from the heat-sensitive first component 108 (e.g., a semiconductor memory chip). To this end, it is also preferred that one or both of the redistribution layers 137, 138 are formed in accordance with Figure 1 has an effective thermal conductivity in the range of 10 W / mK to 15 W / mK in the horizontal plane. Figure 1 In the vertical direction, the thermal conductivity may preferably be in the range of 3 W / mK to 8 W / mK.

[0086] Although not shown, in addition to the thermal vertical through-connection 190 , the first component carrier 102 may also include another heat removal structure located between the first main surface 112 of the second component 110 and the exposed lower main surface of the first component carrier 102 , such as a copper plate, for additionally assisting in removing heat from the second component 110 .

[0087] Reference Figure 1 In the manufacturing method of the electronic device 100 of the embodiment of the present invention, it may be preferred to directly mount the second component 110 on the first component carrier 102 only before the second component carrier 104 is connected to the first component carrier 102 by the connecting body 126 between the second component carrier 104 and the first component carrier 102. With this chip-later manufacturing architecture, it can be ensured that the expensive second component 110 is only mounted on the semi-finished structure of the electronic device 100 at a very late stage, so that the yield can be very high. It can also be advantageous to apply the coating 132 of the second component 110 after the second component 110 has been mounted on the first component carrier 102, for example by sputtering.

[0088] Preferably, with the connection body 126 located between the first component carrier 102 and the second component carrier 104, the first component carrier 102 and the second component carrier 104 can be connected by, for example, thermocompression using a non-conductive film 158 or a slurry (not shown) between the first component carrier 102 and the second component carrier 104. This also contributes to a compact vertical configuration. Accordingly, the first component carrier 102 can be connected to the second component 110, for example, by thermocompression using a non-conductive film 158.

[0089] therefore, Figure 1An electronic device 100 configured as an integrated stacked IC module is provided. The electronic device 100 has integrated computing or processing capabilities, see the second component 110. The electronic device 100 also has an integrated power supply provided by a third component 134, thereby promoting the stability of the integrated signal. An integrated and space-saving implementation is thereby provided for connection between a processor-type second component 110 and a memory-type first component 108. In an implementation, additional functions (e.g., communication capabilities, anti-fraud features, etc.) may also be implemented in the electronic device 100. The thermal decoupling gap 106 is advantageously used to provide thermal separation of the second component 110 relative to the first component 108 in both the lateral and vertical directions. A sputtered layer may be provided as a coating 132 to achieve thermal diffusion of the heat generated by the second component 110 during operation of the electronic device 100.

[0090] Advantageously, the thermal decoupling gap 106 ensures thermal isolation of the memory chip from the processor. Heat from the processor can be removed through the bottom vertical connections (see redistribution layers 137, 138 and electrically conductive layer structure 120) and optionally through one or more copper plates (not shown).

[0091] therefore, Figure 1 The embodiment of the present invention provides an electronic device 100 configured to thermally isolate a first component 108 on the top side from a second component 110 on the bottom side and ensure heat removal in both lateral and vertical directions, thereby avoiding undesired heating of the first component 108. In addition, since a third component 134 (e.g., including a power management IC, passive components, etc.) is also embedded, the electronic device 100 has a reduced vertical height.

[0092] Figure 2 A cross-sectional view of a laminated second component carrier 104 is shown according to an exemplary embodiment, wherein an annular connecting body 126 serves as a top portion of the electronic device 100 .

[0093] exist Figure 2 In an embodiment, the second component carrier 104 includes a stacked configuration of the first component 108. More specifically, two memory chips are directly stacked to improve memory performance. Therefore, Figure 2 The invention relates to an improved memory package.

[0094] also, Figure 2 The second component carrier 104 is implemented as a purely laminated component carrier (eg, a PCB or an IC substrate). Figure 2The second component carrier 104 may be a plate-like laminated stack composed of a plurality of electrically conductive layer structures 160 and a plurality of electrically insulating layer structures 162. For example, the electrically conductive layer structure 160 may include a patterned copper foil and a vertical through-connection portion, which is, for example, a laser via filled with copper. The electrically insulating layer structure 162 may include a resin (e.g., an epoxy resin) and optionally reinforcing particles (e.g., glass fibers or glass balls) located in the resin. For example, the electrically insulating layer structure 162 may be made of FR4 or ABF.

[0095] Furthermore, the second component carrier 104 has redistribution layers 139 , 141 on two opposite main surfaces of the second component carrier 104 .

[0096] also, Figure 2 It is shown that at least one fourth component 164 , for example a passive component such as a capacitor, can optionally be embedded in the frame-shaped connecting body 126 .

[0097] Figure 3 A cross-sectional view of a first component carrier 102 according to an exemplary embodiment is shown, wherein an embedded passive third component 134 serves as a bottom portion of the electronic device 100 .

[0098] according to Figure 3 The upper main surface of the first component carrier 102 is equipped with an electrically conductive connection element 164 which can be connected to the pad 152 of the second component 110 and to the vertical through-connection 130 extending through the connection body 126 .

[0099] therefore, Figure 3 The improved substrate-type component carrier 102 is shown with integrated power management provided by at least a portion of the third component 134 .

[0100] Figure 4 A cross-sectional view of a first component carrier 102 according to an exemplary embodiment is shown, wherein an embedded passive third component 134 and a second component 110 surface mounted on the first component carrier 102 and an annular connecting body 126 serve as a bottom portion of the electronic device 100 .

[0101] Figure 4 Exemplary vertical dimensions of various components are shown, illustrating that the described manufacturing architecture allows for an electronic device 100 having a high degree of compactness in the vertical direction.

[0102] Figure 5 A cross-sectional view of an electronic device 100 according to another exemplary embodiment is shown.

[0103] Figure 5The dimensions of the electronic device 100 shown in the vertical direction are also shown, thereby illustrating a highly compact configuration in the z-axis direction.

[0104] also, Figure 5 It is shown that the inner side wall 166 of the connection body 126 defining the lateral extent of the thermal decoupling gap 106 can be covered with the coating 133. Figure 1 The coating layer 132 shown in FIG. 1 may be provided in addition or alternatively with a coating layer 133 . Preferably, the coating layer 133 may be made of an anti-corrosion material (such as PTFE) to prevent moisture from reaching the sensitive second electronic component 110 .

[0105] Figure 6 A cross-sectional view of a bottom portion of an electronic device 100 according to an exemplary embodiment is shown.

[0106] Figure 6 The vertical dimensions of the various components of the lower portion of the electronic device 100 are shown in detail. Advantageously, Figure 6 The overall vertical thickness 168 of the lower portion of the electronic device 100 shown in FIG. 1 , depending in particular on the number of fanned-out layers and the fabrication techniques implemented, may be quite small.

[0107] Figure 7 A cross-sectional view of a bottom portion of an electronic device 100 according to another exemplary embodiment is shown.

[0108] and Figure 6 On the contrary, Figure 7 The basis is omitted Figure 6 A non-conductive film 158 for thermal compression.

[0109] Figure 8 A cross-sectional view of component parts of an electronic device 100 according to an exemplary embodiment before connection is shown.

[0110] Figure 8 It is shown that after the memory board is assembled, the non-conductive film 158 may be applied from the back side. Figure 8 The structure obtained after forming a thermocompression bond between the first component carrier 102 and the connection body 126 is shown.

[0111] Figure 8 It is also shown how a thermal decoupling gap 106 is formed for providing thermal isolation of the memory chip (first component 108) from the processor (second component 110). Thus, memory heat can be removed through the vertical connections on the bottom side, see vertical through connections 190 and optional copper plates (not shown).

[0112] Figures 9 to 19A cross-sectional view of a structure obtained during execution of a method of manufacturing the electronic device 100 according to an exemplary embodiment is shown.

[0113] Reference Fig. 9 , an embodiment of the connection body 126 is shown as a z-axis connector frame with a solder cap 170 for establishing an electrically conductive connection with the first component carrier 102. Thus, using the solder cap 170, the connection body 126 can be bonded on top of the first component carrier 102 via the embedded third component 134 on the bottom side.

[0114] PCB or IC substrate type components 102, 126 may be manufactured and processed at the panel level.

[0115] Reference Fig.10 , showing the first component carrier 102 and Fig. 9 The connection result of the connection body 126 can be completed by a large amount of reflow soldering (for example, at a temperature of 250° C.).

[0116] Fig.11 It is shown how to prepare a second component 110 of the processor type, which is connected with solder bumps or copper pillars provided as a part of the electrically conductive layer structure 120 located on top of the first component carrier 102. The second component 110 may be provided with a solder cap and / or a non-conductive film 158 at the bottom side of the second component 110. Thereafter, the second component 110 may be bonded to the copper pillars located on top of the substrate type first component carrier 102 by thermocompression bonding. Fig.12 The result of this bonding process is shown.

[0117] Fig.13 A coating 132 is shown applied to exposed surface portions of the second component 110 and the connection body 126. For example, the coating 132 may be a deposited moisture barrier, which may be applied, for example, by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

[0118] Reference Fig.14 , the prefabricated molded second component carrier 104 can be close to the reference Fig.13 The structure obtained after the described procedure.

[0119] Reference Fig.15 , shows a first part and a second body before bonding (eg before forming a thermocompression bond), the first body consisting of an already connected first component carrier 102 and a connecting body 126, the second body being in the form of a second component 110.

[0120] Reference Fig.16 ,Apart from Fig.15 In addition to the body shown in FIG. 1 , a prefabricated molded second component carrier 104 is also shown.

[0121] Reference Fig.17 , shows the result of bonding (eg, thermocompression bonding) the second component 110 to the first component carrier 102 .

[0122] Reference Fig.18 , shows an embodiment where a (eg, processor type) second component 110 is fully encapsulated by a (eg, mold type) coating 132. In this embodiment, the coating 132 may be used for bonding (eg, thermocompression bonding) and providing a mold underfill.

[0123] Fig.19 A preform of the electronic device 100 is shown before a thermocompression bond is formed between the connection body 126 and the second component carrier 104 .

[0124] Fig. 20 Results of a simulation of an electronic device 100 according to an exemplary embodiment are shown and illustrate improved thermal decoupling between a first component 108 in the second component carrier 104 and another second component 110 in the thermal decoupling gap 106 in the first component carrier 102 .

[0125] Fig. 20 1 shows a plan view of an electronic device 100 according to an exemplary embodiment, wherein two first components 108 of a memory type are provided above a second component 110 of a processor type. Reference numeral 180 denotes a device for obtaining Fig. 20 The three cross-sectional views correspond to simulation results for simulating the effect of providing the thermal decoupling gap 106, as shown above. In addition, the simulation results provide information about the effect of different thermal conductivity below the second component 110.

[0126] As shown in the first cross section 182, a simulation of the heat distribution around the second component 110 is shown, assuming that there is no thermal decoupling gap. The thermal conductivity of the homogenized or averaged redistribution layer is assumed to be 4 W / mK in the vertical direction and 15 W / mK in each horizontal direction. As a result of the simulation, the temperature difference at the location of the second component 110 compared to the location of the first component 108 is relatively small, which is 35 K. The maximum temperature of the first electronic component 108 of the memory type is 76° C., which is high. The simulation results show that there is a risk of a large amount of heat transfer from the second component 110 to the first component 108 without a thermal decoupling gap.

[0127] As shown in the second cross section 184, a simulation of the heat distribution around the second component 110 is again shown without a thermal decoupling gap. The thermal conductivity of the redistribution layer is assumed to be 4 W / mK in the vertical direction and 10 W / mK in each horizontal direction. The maximum temperature of the first electronic component 108 of the memory type is 77°C.

[0128] As shown in the third cross section 186, a simulation of the heat distribution around the second component 110 with the thermal decoupling gap 106 is shown, for example with Figure 1 For comparison. It is assumed that the thermal conductivity of the redistribution layer is 4 W / mK in the vertical direction and 15 W / mK in each horizontal direction. As a result of the simulation, the temperature difference at the location of the second component 110 compared to the location of the first component 108 is significantly greater, which is 65 K. The maximum temperature of the first electronic component 108 of the storage type is only 60°C. The temperature of the second component 110 with higher temperature stability is slightly higher than the temperature without the thermal decoupling gap 106, but is still within an acceptable range.

[0129] Comparing the first cross section 182 with the third cross section 186, the simulation results show that the temperature difference between the top package and the bottom package is much higher with the thermal decoupling gap 106. Therefore, although the temperature of the second component 110 (which is more resistant to high temperatures) is slightly higher in the third cross section 186, the temperature of the first component 108, which is more sensitive to temperature, is significantly lower in the third cross section 186 compared to the first cross section 182.

[0130] Comparison of second cross section 184 to first cross section 182 relative to comparison of third cross section 186 to first cross section 182 shows that the positive impact of thermal decoupling gap 106 is even greater than the thermal conductivity of the redistribution layer. However, increasing the thermal conductivity of the redistribution layer may still have a positive impact on the temperature of second component 110.

[0131] It is concluded that providing the thermal decoupling gap 106 is highly beneficial for protecting the first component 108 from overheating. The increase in the thermal conductivity of the redistribution layers 137, 138 also has a positive effect on the cooling of the second component 110, but to a lesser extent in magnitude.

[0132] Fig.21 and Fig. 22 A cross-sectional view of an electronic device 100 according to another exemplary embodiment is shown.

[0133] Reference Fig.21 , the dashed lines indicate that one or more first components 108 may be surface mounted on the second component carrier 104, or may be embedded in a molding compound 124 or the like in an upper portion of the second component carrier 104. Fig.21Two first components 108 are shown.

[0134] Fig.21 It is also shown that a plurality of cavities or thermal decoupling gaps 106 may be formed between the first component carrier 102 and the second component carrier 104 , each of which is used to accommodate one or more second components 110 . Fig.21 Three thermal decoupling gaps 106 are shown, each of which accommodates one second component 110 .

[0135] Reference Fig. 22 , shows an embodiment in which the first component 108 is mounted on the second component carrier 104 and is thus exposed to the environment. Such an embodiment can be advantageous, for example, when the first component 108 is a light-sensitive sensor. Since light-sensitive sensors are prone to failure in the event of overheating, it is advantageous that the (here two) second components 110 in the thermal decoupling gap 106 are thermally decoupled from the surface-mounted first component 108, as described above.

[0136] The first component 108 may also be configured as a lens and / or any other optical element. The lens or any other optical element may also be mounted on the first component 108, in particular, the lens or any other optical element may also be mounted on the first component 108 when implemented as a photosensitive sensor. In addition, the first component 108 may include or be connected to a waveguide such as an optical fiber (not shown).

[0137] Figure 23 to Figure 25 A cross-sectional view showing components of a module type electronic device 100 according to an exemplary embodiment and schematically showing a method of manufacturing the module type electronic device 100. Three different concepts may be applied to manufacturing the electronic device 100 according to an exemplary embodiment of the present invention.

[0138] Reference Fig.23 , a thermal decoupling gap 106 can be formed by sandwiching a connection body 126 having an opening between the first component carrier 102 and the second component carrier 104. One or more functional elements can be integrated in the connection body 126 and / or guided through the connection body 126. For example, a waveguide can be provided that at least partially extends through the connection body 126, for example, to transmit optical signals between the first component carrier 102 (or the second component 110 of the first component carrier 102) and the second component carrier 104 (or the first component 108 of the second component carrier 104).

[0139] Reference Fig.24 , a thermal decoupling gap 106 can be formed which connects the concave first component carrier 102 with the planar second component carrier 104 .

[0140] Reference Fig.25 , a thermal decoupling gap 106 can be formed which connects the planar first component carrier 102 with the concave second component carrier 104 .

[0141] In the embodiments described above, the first component 108 on and / or in the second component carrier 104 has been described as a temperature sensitive element, while the second component 110 in the thermal decoupling gap 106 has been described as a heat generating element. However, in other exemplary embodiments, the functions may be reversed, i.e., the first component 108 on and / or in the second component carrier 104 may be a heat generating element, while the second component 110 in the thermal decoupling gap 106 may be a temperature sensitive element, which is protected by thermally decoupling the temperature sensitive element from the heat generating element.

[0142] It should be pointed out that the term "comprising" does not exclude other elements or steps and the article "a" or "an" does not exclude a plurality. Furthermore, elements described in association with different embodiments may be combined.

[0143] The implementation of the invention is not limited to the preferred embodiments shown in the drawings and described above. Rather, the solutions shown and numerous variants of the principle according to the invention can be used, even in fundamentally different situations.

Claims

1. An electronic device, comprising: a first component carrier; a second component carrier, which is connected to the first component carrier in such a way that a thermal decoupling gap is formed between the first component carrier and the second component carrier; a first component, which is located on and / or in the second component carrier; a second component having a first main surface, the second component being mounted in the thermal decoupling gap at the first main surface such that at least a portion of the opposite second main surface and the entire side wall of the second component are exposed relative to the material of the first component carrier and relative to the material of the second component carrier, The first component carrier includes a heat removal structure between the first major surface of the second component and an exposed major surface of the first component carrier, the heat removal structure being used to remove heat from the second component through the exposed major surface of the first component carrier.

2. The electronic device according to claim 1, wherein: The first major surface of the second component is mounted on the first component carrier.

3. The electronic device according to claim 1, wherein: The first component carrier comprises a connected stack comprising at least one electrically conductive layer structure and / or at least one electrically insulating layer structure.

4. The electronic device according to claim 3, wherein: The stack is a laminated stack.

5. The electronic device according to claim 1, wherein: The first component is embedded or surface mounted.

6. The electronic device according to claim 1, wherein: The second component carrier comprises a connected stack comprising at least one electrically conductive layer structure and / or at least one electrically insulating layer structure.

7. The electronic device according to claim 6, wherein: The stack is a laminated stack.

8. The electronic device according to claim 6 or 7, wherein: The first component is embedded in the stack or surface mounted on the stack.

9. The electronic device according to claim 1, wherein: The entire second main surface of the second component is exposed relative to the material of the first component carrier and relative to the material of the second component carrier.

10. The electronic device according to claim 1, wherein: At least one of the first component and the second component is a semiconductor chip.

11. The electronic device according to claim 1, wherein: The first component is a memory chip or a sensor chip.

12. The electronic device according to claim 1, wherein: The first component is an image sensor chip.

13. The electronic device according to claim 1, wherein: The second component is a processor chip.

14. The electronic device according to claim 1, wherein: The second component carrier comprises, on a side facing the first component carrier, a recess for at least partially accommodating the second component and defining the thermal decoupling gap.

15. The electronic device according to claim 1, wherein: The electronic device further comprises: A connecting body is connected between the first component carrier and the second component carrier and has an opening for at least partially accommodating the second component and defining the thermal decoupling gap.

16. The electronic device according to claim 15, wherein: The connection body includes at least one vertical through-connection portion filled with an electrically conductive material and electrically coupling the first component with the second component.

17. The electronic device according to claim 1, wherein: The first component carrier comprises at least one vertical through-connection which is not electrically connected and which is filled with a heat-conducting material.

18. The electronic device according to claim 1, wherein: The electronic device further comprises: a coating that at least partially coats at least one of the exposed surfaces of the second component, and A thermal decoupling gap defines a side wall of a connecting body connecting the first component carrier to the second component carrier.

19. The electronic device according to claim 18, wherein: The coating includes at least one of a high thermal conductivity coating and a protective coating.

20. The electronic device according to claim 19, wherein: The protective coating is an anti-corrosion coating.

21. The electronic device according to claim 1, wherein: The electronic device further comprises: A third component is embedded in the first component carrier.

22. The electronic device according to claim 21, wherein: The third component includes at least one of a passive component and a power supply controller.

23. The electronic device according to claim 18, wherein: The electronic device further comprises: A fourth component is embedded in the connecting body.

24. The electronic device according to claim 23, wherein: The fourth component includes a passive component or an active component.

25. The electronic device according to claim 1, wherein: The electronic device further comprises at least one of the following features: wherein the first component carrier comprises at least one post, the at least one post being located at an exposed major surface for providing external electrical connection of the electronic device; wherein the first component carrier comprises a redistribution layer on an exposed major surface; wherein the second component carrier comprises a redistribution layer at a major surface facing the first component carrier; wherein the first component carrier comprises at least one redistribution layer, the volume percentage of copper in the at least one redistribution layer being at least 1 volume percentage; wherein the first component carrier comprises at least one redistribution layer, the at least one redistribution layer having a homogenized or averaged thermal conductivity in a horizontal plane in the range of 5 W / mK to 20 W / mK; wherein the first component carrier comprises at least one redistribution layer, the at least one redistribution layer having a homogenized or averaged thermal conductivity in a vertical direction in the range of 2 W / mK to 10 W / mK; wherein the second component carrier comprises at least one further first component, wherein the first component and the at least one further first component are arranged according to at least one of a side-by-side arrangement and a vertically stacked arrangement; wherein at least one electrically conductive layer structure of at least one of the first component carrier and the second component carrier comprises at least one of copper, aluminum, nickel, silver, gold, palladium and tungsten; wherein at least one electrically insulating layer structure of at least one of the first component carrier and the second component carrier comprises at least one of: at least one of a resin, a glass, a prepreg material, a ceramic and a metal oxide; wherein at least one of the first component carrier and the second component carrier is formed as a plate; wherein at least one of the first component carrier and the second component carrier is configured as a printed circuit board; Therein, at least one of the first component carrier and the second component carrier is configured as a laminated component carrier.

26. The electronic device according to claim 25, wherein: Any of the mentioned copper, aluminum, nickel, silver, gold, palladium and tungsten is coated with a superconducting material.

27. The electronic device according to claim 26, wherein: The superconducting material is graphene.

28. The electronic device according to claim 1, wherein: At least one electrically insulating layer structure of at least one of the first component carrier and the second component carrier includes at least one of cyanate ester, polyphenylene derivative, polyimide, polyamide, liquid crystal polymer, epoxy-based build-up film, and polytetrafluoroethylene.

29. The electronic device according to claim 1, wherein: At least one electrically insulating layer structure of at least one of the first component carrier and the second component carrier comprises FR-4 or FR-5.

30. The electronic device according to claim 1, wherein: At least one of the first component carrier and the second component carrier is configured as a base plate.

31. A method of manufacturing an electronic device, the method comprising: providing a first component carrier; providing a second component carrier having a first component; connecting the second component carrier to the first component carrier such that a thermal decoupling gap is formed between the first component carrier and the second component carrier; A first major surface of a second component is mounted in the thermal decoupling gap such that at least a portion of an opposite second major surface and an entire sidewall of the second component are exposed relative to the material of the first component carrier and relative to the material of the second component carrier, wherein the first component carrier includes a heat removal structure located between the first major surface of the second component and the exposed major surface of the first component carrier, the heat removal structure being used to remove heat from the second component through the exposed major surface of the first component carrier.

32. The method according to claim 31, wherein: The method also includes at least one of the following features: wherein the method comprises, before connecting the first component carrier to the second component carrier, mounting the first main surface of the second component on the first component carrier; wherein the method comprises coating the second component with a coating after mounting the second component on the first component carrier; wherein the method comprises connecting the first component carrier to the second component carrier by thermocompression; Therein, the method comprises connecting the first component carrier to the second component by thermocompression.

33. The method of claim 32, wherein: The method comprises mounting the first main surface of the second component on the first component carrier immediately before connecting the first component carrier to the second component carrier.

34. The method of claim 32, wherein: The method includes coating the second component by sputtering.

35. The method of claim 32, wherein: The method comprises connecting the first component carrier to the second component carrier by thermocompression using a connecting body located between the first component carrier and the second component carrier.

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