Photoresist stripping liquid as well as preparation method and application thereof

Abstract

The invention provides photoresist stripping liquid as well as a preparation method and application thereof. The photoresist stripping liquid comprises the following components in parts by weight: 5-30 parts of quaternary ammonium base; 5 to 30 parts of alcohol amine; 20-45 parts of a polar solvent; 0.5 to 5 parts of a sulfonyl hydrazide corrosion inhibitor; 0.5 to 6 parts of a pyrithiourea corrosion inhibitor; and 15 to 40 parts of deionized water. The photoresist stripping liquid disclosed by the invention has the capability of efficiently removing photoresist, and also shows low corrosivity and high chemical inertness on a base material. The photoresist stripping liquid not only improves the production efficiency of semiconductors, but also reduces the influence of the environment, is suitable for each link in a semiconductor manufacturing process, and is particularly suitable for removing the photoresist of a III-V compound (such as gallium arsenide GaAs) base material and a metal (such as copper Cu) base material.

Description

Technical Field

[0001] The invention relates to photoresist stripping solution technology, in particular to a photoresist stripping solution, a preparation method and application thereof. Background Art

[0002] In the semiconductor manufacturing process, photolithography is a key step and is widely used to define fine circuit patterns on wafers. Photoresist is a photosensitive material used for mask pattern transfer, and the desired pattern is formed through exposure and development steps. However, after the pattern transfer is completed, the photoresist must be effectively removed for subsequent process steps. This process is usually called photoresist stripping. Photoresist stripping faces special challenges for materials such as III-V compounds (such as gallium arsenide, GaAs) and copper (Cu). These materials have unique physical and chemical properties, requiring the stripping solution to not only efficiently remove the photoresist, but also ensure chemical inertness to the substrate to avoid corrosion and damage. III-V compounds such as gallium arsenide (GaAs) have important applications in high-speed electronic devices and optoelectronic devices. GaAs has high electron mobility and direct band gap, making it an ideal material for high-frequency, high-efficiency electronic and optoelectronic devices. However, the GaAs surface is susceptible to chemical corrosion, and the use of improper photoresist stripping solutions may lead to increased surface roughness and affect device performance. Therefore, the development of photoresist stripping solutions suitable for GaAs needs to consider its chemical stability and low corrosion. Copper is widely used as an interconnect material in semiconductor devices due to its excellent conductivity and low resistivity. However, copper is easily oxidized or corroded in many chemical environments, especially under high temperature or acidic conditions. Traditional photoresist stripping solutions, such as solvents containing strong alkali or strong acid, have a greater corrosive effect on copper. Therefore, photoresist stripping solutions for copper need to have mild chemical properties and can effectively remove photoresist without damaging the copper surface.

[0003] Currently, common photoresist stripping solutions mainly include organic solvent type, alkaline solution type and special mixed type. The commonly used system is composed of organic solvents such as N-methylpyrrolidone and organic bases. Although it can effectively remove photoresist, improper handling will cause corrosion of the substrate. In order to meet the semiconductor manufacturing industry's demand for efficient and low-damage photoresist stripping, the research and development of new photoresist stripping solutions should focus on the following aspects:

[0004] High-efficiency photoresist removal capability: capable of quickly and thoroughly removing various types of photoresists.

[0005] Chemically inert: Non-corrosive and low-damage to a variety of substrates including GaAs and Cu.

[0006] Environmentally friendly: Reduce the use of toxic and harmful solvents and comply with environmental regulations.

[0007] Process compatibility: Suitable for existing semiconductor manufacturing processes and easy to integrate into the production process.

[0008] The photoresist stripping solution in the prior art is often accompanied by corrosion of the substrate when removing the photoresist, especially the surface damage of sensitive materials such as GaAs and Cu is more obvious. These damages not only affect the device performance, but also increase the manufacturing cost. Therefore, there is an urgent need for a new stripping solution that can efficiently remove the photoresist and has low corrosion to substrates including GaAs and Cu. Summary of the invention

[0009] The purpose of the present invention is to provide a photoresist stripping solution, which is used to remove photoresists in a conventional photoresist stripping solution, and is particularly effective in removing photoresists from substrates, and particularly in causing obvious surface damage to sensitive materials such as GaAs and Cu. The photoresist stripping solution has the ability to efficiently remove photoresists and exhibits low corrosion and high chemical inertness to the substrate. The photoresist stripping solution of the present invention not only improves semiconductor production efficiency, but also reduces environmental impact, and is suitable for various links in semiconductor manufacturing processes, and is particularly suitable for removing photoresists from substrates of III-V compounds (such as gallium arsenide GaAs) and metal (such as copper Cu) substrates.

[0010] It should be noted that, in the present invention, unless otherwise specified, the specific meaning of "including" in relation to composition limitations and descriptions includes both open-ended "including", "comprising", etc. and similar meanings, as well as closed-ended "composed of", "composed of", etc. and similar meanings.

[0011] To achieve the above object, the technical solution adopted by the present invention is: a photoresist stripping solution, comprising the following components in weight proportions:

[0012]

[0013] Further, the quaternary ammonium base is one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, trimethylphenylammonium hydroxide, tributylethylammonium hydroxide, phenyltriethylammonium hydroxide, trimethylhydroxyethylammonium hydroxide, diethyldimethylammonium hydroxide, triethylmethylammonium hydroxide, ethyltrimethylammonium hydroxide, benzyldi(2-hydroxyethyl)methylammonium hydroxide, benzyl(2-hydroxyethyl)dimethylammonium hydroxide and tri(2-hydroxyethyl)methylammonium hydroxide.

[0014] Furthermore, the quaternary ammonium base is preferably diethyldimethylammonium hydroxide and / or benzyl (2-hydroxyethyl) dimethylammonium hydroxide.

[0015] Furthermore, the quaternary ammonium base is 15-25 parts.

[0016] Quaternary ammonium bases have strong alkalinity and can neutralize the acidic components in photoresists and destroy their structure. Photoresists usually contain phenolic resins or other polymers. The acidic functional groups in these polymers are neutralized by quaternary ammonium bases, which causes the molecular chains of photoresists to break and lose adhesion and mechanical strength. In addition, quaternary ammonium base molecules have hydrophilic and hydrophobic groups, which enable them to reduce the surface tension of the solution, enhance the penetration ability into the photoresist, and improve the stripping efficiency.

[0017] Furthermore, the alcoholamine is one or more of monoethanolamine, isopropanolamine, diethanolamine, triethanolamine, 3-amino-1-propanol, 2-amino-1-butanol, 3-diethylamino-1-propanol, diglycolamine, dibutanolamine, 1-amino-2-butanol, methylethanolamine, 2-butylaminoethanol, diisopropanolamine, methyldiethanolamine and N-butyldiethanolamine.

[0018] Furthermore, the alcohol amine is preferably diglycolamine and / or 2-butylaminoethanol.

[0019] Furthermore, the alcohol amine is 10-25 parts.

[0020] Alcoholamines have good solubility and can dissolve organic components in photoresists. Their hydroxyl groups can interact with polar groups in photoresists to enhance the dissolution effect. Alcoholamine organic bases provide a mild alkaline environment, which can neutralize the acidic components in photoresists, causing the polymer chains of photoresists to break and dissolve. This alkaline effect is relatively mild, reducing corrosion to the substrate. The hydroxyl groups of alcoholamine organic bases are hydrophilic, which can reduce the surface tension of photoresist stripping solutions and increase the wettability of photoresist surfaces, thereby improving stripping efficiency.

[0021] Further, the polar solvent is one or more of N-methylpyrrolidone, N-ethylpyrrolidone, 2,5-dimethylpyrrolidone, 1,4-dimethyl-2-pyrrolidone, N-hydroxyethyl-2-pyrrolidone, N-cyclohexylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, N-ethylmorpholine, N-cyclohexylmorpholine, N,N-dimethylacetamide, N,N-dimethylpropionamide, N-methylformamide, N-ethylformamide, dimethyl sulfoxide, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether and dipropylene glycol butyl ether.

[0022] Furthermore, the polar solvent is preferably 1,3-dimethyl-2-imidazolidinone.

[0023] Furthermore, the polar solvent is 25-40 parts.

[0024] Polar solvents have strong dissolving power and can dissolve organic components and additives in photoresists. Their high polarity enables them to effectively interact with polar groups in photoresists, thereby destroying the structure of photoresists. And they can dissolve phenolic resins or other polymers in photoresists through hydrogen bonding and dipole interactions.

[0025] Furthermore, the sulfonylhydrazine corrosion inhibitor is one or more of methanesulfonylhydrazine, dansylhydrazine, p-toluenesulfonylhydrazine, 4-benzenesulfonylhydrazine, naphthalene-2-sulfonylhydrazine, p-aminobenzenesulfonylhydrazine, 3-aminobenzenesulfonylhydrazine, p-hydroxybenzenesulfonylhydrazine, pyridine-3-sulfonylhydrazine, 4-methoxybenzenesulfonylhydrazine, 4-isopropylbenzenesulfonylhydrazine, 4-ethylbenzenesulfonylhydrazine, 4-ethoxybenzenesulfonylhydrazine, 2,4-dimethylbenzenesulfonylhydrazine, 2,5-dimethylbenzenesulfonylhydrazine and 2-nitrobenzenesulfonylhydrazine.

[0026] Furthermore, the sulfonylhydrazide corrosion inhibitor is preferably 4-methoxybenzenesulfonylhydrazide.

[0027] Furthermore, the sulfonylhydrazide corrosion inhibitor is 1-3 parts.

[0028] Sulfonylhydrazide corrosion inhibitor molecules contain multiple active groups, such as amino and sulfonyl groups, which can form a protective film on the surface of metal or semiconductor materials through physical adsorption or chemical adsorption. This protective film can effectively prevent corrosive substances from contacting the substrate. At the same time, sulfonylhydrazide corrosion inhibitors can promote the passivation of the metal surface, forming a dense oxide or other inert film. This passivation film has good chemical stability and further enhances the corrosion resistance of the metal surface. Sulfonylhydrazide corrosion inhibitors have reducing properties and can reduce the oxide layer on the surface of the material, thereby slowing down the corrosion process.

[0029] Furthermore, the pyridinylthiourea corrosion inhibitor is one or more of 2-pyridinylthiourea, 3-pyridinylthiourea, n-phenyl-n-2-pyridinylthiourea, N-(4-methyl-2-pyridyl)thiourea, p-pyridinylthiourea, N-(5-methylpyridin-2-yl)thiourea, 4-(2-pyridinyl)semicarbazide and 1-ethyl-3-pyridin-2-ylthiourea.

[0030] Furthermore, the pyridinylthiourea corrosion inhibitor is preferably pyridinylthiourea.

[0031] The pyridine ring and thiourea group in the pyridinethiourea molecule can chemically adsorb to the metal surface through π-electrons to form a strong adsorption layer. This adsorption layer can effectively isolate the corrosive medium from corroding the metal surface. Pyridinethiourea corrosion inhibitors can change the electrochemical properties of the metal surface, increase its electrochemical potential, thereby reducing the corrosion current density and reducing metal dissolution. At the same time, pyridinethiourea corrosion inhibitors have a certain complexing effect. Pyridinethiourea can react with copper ions (Cu 2+) forms a stable complex. This complexation significantly reduces the chemical reactivity of copper by encapsulating copper ions inside the pyridinethiourea molecule, thereby reducing its corrosion rate in an oxidizing environment. The formation of this complex effectively shields the copper surface and reduces the chance of direct contact with the corrosive medium. Copper is easily oxidized to form copper oxides (such as Cu2O and CuO) when exposed to air or oxidizing media. Pyridinethiourea stabilizes copper ions by forming a complex with copper, reducing the oxidation tendency of copper in these media, thereby effectively preventing the formation of an oxide film on the copper surface. Pyridinethiourea can effectively inhibit the electrochemical reaction of copper in corrosive media. It reduces the electrochemical activity of copper by forming a protective film or complex with the copper surface, thereby reducing the occurrence of corrosion reactions. Through the complex and protective film formed, pyridinethiourea can reduce the corrosive effect of corrosive media on the copper surface. This protective film not only effectively isolates the corrosive medium, but also provides a certain buffering effect, thereby reducing the overall corrosion rate of copper.

[0032] Furthermore, the pyridinethiourea corrosion inhibitor is 1-3 parts.

[0033] Furthermore, the mass ratio of the pyridinethiourea corrosion inhibitor to the sulfonylhydrazide corrosion inhibitor is 5:1-1:5.

[0034] Furthermore, the mass ratio of the pyridinethiourea corrosion inhibitor to the sulfonylhydrazide corrosion inhibitor is preferably 4:1-1:4.

[0035] Furthermore, the mass ratio of the pyridinethiourea corrosion inhibitor to the sulfonylhydrazide corrosion inhibitor is most preferably 2:1.

[0036] The adsorption layer and protective film of the pyridinethiourea corrosion inhibitor and the sulfonylhydrazine corrosion inhibitor can be superimposed to improve the protective effect. This synergistic effect makes the protective film denser and more stable, significantly enhancing the shielding ability against corrosive media. The combined use can simultaneously utilize the passivation effect of sulfonylhydrazine and the chemical adsorption effect of pyridinethiourea to provide multiple protection mechanisms, thereby improving the corrosion inhibition effect. Corrosion inhibitors with different mechanisms complement each other and can prevent corrosion more comprehensively. Sulfonylhydrazine corrosion inhibitors and pyridinethiourea corrosion inhibitors achieve electrochemical protection by inhibiting anode and cathode reactions and reducing corrosion current.

[0037] Furthermore, the deionized water is 20-35 parts.

[0038] Another object of the present invention is to disclose a method for preparing the photoresist stripping solution, comprising the following steps:

[0039] Step 1: Weigh each component according to mass, add the polar solvent into a container, add the quaternary ammonium base, alcoholamine and deionized water under stirring, and stir until the solution is clear and transparent;

[0040] Step 2: Add sulfonylhydrazide corrosion inhibitor and pyridinethiourea corrosion inhibitor under stirring, and stir until the solution is uniform and transparent to prepare a photoresist stripping solution.

[0041] Furthermore, the stirring time in step 1 is 1-2 hours.

[0042] Furthermore, the stirring time in step 2 is 0.5-2 hours.

[0043] Furthermore, the stirring temperature is controlled below 40°C.

[0044] Furthermore, the photoresist stripping solution is filtered through a filter element after preparation, preferably through a filter element with pore sizes of 0.2 μm and 0.1 um, respectively.

[0045] Another object of the present invention is to disclose the application of the photoresist stripping solution in the field of photoresist stripping of III-V compound substrates and metal substrates.

[0046] Furthermore, the photoresist stripping solution is particularly suitable for stripping photoresists from GaAs substrates and Cu substrates.

[0047] Further, the method of using the photoresist stripping solution to clean GaAs substrate and Cu substrate photoresist is as follows:

[0048] Immerse the semiconductor wafer in a photoresist stripping solution at 50-90°C, ultrasonicate or vibrate for 5-30 minutes, take it out, rinse it with ultrapure water, and blow it dry with nitrogen;

[0049] Alternatively, use a single-chip machine to spray a 50-90°C photoresist stripping solution onto a rotating semiconductor wafer, rinse for 5-10 minutes, take it out and rinse with ultrapure water, and blow dry with nitrogen.

[0050] Furthermore, the temperature of the photoresist stripping solution is 50-90°C.

[0051] Furthermore, the temperature of the photoresist stripping solution is preferably 70-85°C.

[0052] Furthermore, the ultrasound or vibration is performed for 5-30 minutes.

[0053] Furthermore, the ultrasound or vibration is preferably performed for 10-25 min.

[0054] Compared with the prior art, the photoresist stripping solution of the present invention, its preparation method and application have the following advantages:

[0055] 1) The photoresist stripping solution of the present invention comprises a sulfonylhydrazine corrosion inhibitor and a pyridinethiourea corrosion inhibitor. The sulfonylhydrazine corrosion inhibitor provides a strong passivation effect and a stable adsorption layer, effectively preventing the contact between the corrosive substance and the substrate, and protecting GaAs and Cu. The pyridinethiourea corrosion inhibitor effectively prevents the invasion of the corrosive medium by chemical adsorption and forming a dense protective film, while providing good electrochemical protection. The sulfonylhydrazine corrosion inhibitor and the pyridinethiourea corrosion inhibitor can play a synergistic role after compounding, and the adsorption layer and protective film of the two can be superimposed to improve the protective effect. This synergistic effect makes the protective film more dense and stable, and significantly enhances the shielding ability of the corrosive medium. The compound use can simultaneously utilize the passivation effect of sulfonylhydrazine and the chemical adsorption effect of pyridinethiourea, provide multiple protection mechanisms, and thus improve the corrosion inhibition effect. Corrosion inhibitors of different mechanisms complement each other and can prevent corrosion more comprehensively. Sulfonylhydrazine corrosion inhibitors and pyridinethiourea corrosion inhibitors suppress anode and cathode reactions, reduce corrosion current, and achieve electrochemical protection.

[0056] 2) The present invention adopts two corrosion inhibitors, namely, a sulfonylhydrazide corrosion inhibitor and a pyridinethiourea corrosion inhibitor, which reduces the concentration requirement of a single corrosion inhibitor. That is, the dosage of a single corrosion inhibitor can be effectively reduced through compounding, reducing its negative impact on the photoresist stripping solution (such as reducing the stripping efficiency or introducing additional impurities), thereby optimizing the entire stripping process.

[0057] 3) The photoresist stripping solution of the present invention comprises quaternary ammonium base and alcohol amine. The quaternary ammonium base has strong alkalinity, can effectively neutralize the acidic components in the photoresist, destroy its molecular structure, promote the decomposition of the photoresist, and improve the degumming efficiency. The alcohol amine organic base has both solubility and alkalinity, can not only dissolve the organic substances in the photoresist, but also break the photoresist molecular chain through neutralization, thereby improving the degumming effect. The synergistic effect of the quaternary ammonium base and the alcohol amine organic base in the polar solvent can more effectively destroy the structure of the photoresist and dissolve its components, making the removal process of the photoresist faster and more thorough. It can effectively remove various types of photoresists (positive photoresists and negative photoresists), has a wide range of applicability, and meets different process requirements.

[0058] In summary, the photoresist stripping solution of the present invention can be used for stripping photoresists in the semiconductor industry. While ensuring the photoresist stripping ability, it has an excellent protective effect on GaAs and Cu electrodes and can effectively inhibit their corrosion. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 This is a microscope picture of the Cu chip magnified 100 times.

[0060] Figure 2 This is a microscope picture of a Cu chip after being immersed in the photoresist stripping solution prepared in Example 1 and magnified 100 times.

[0061] Figure 3 This is a microscope picture of a Cu chip after being immersed in the photoresist stripping solution prepared in Comparative Example 4 and magnified 100 times.

[0062] Figure 4 This is a microscope picture of the GaAs chip magnified 100 times.

[0063] Figure 5 This is a microscope picture of a GaAs chip after being immersed in the photoresist stripping solution prepared in Example 1 and magnified 100 times.

[0064] Figure 6 This is a microscope picture of a GaAs chip after being immersed in the photoresist stripping solution prepared in Comparative Example 3 and magnified 100 times.

[0065] Figure 7 This is a microscope picture of a resist sample after being cleaned with the photoresist stripping solution prepared in Example 1, magnified 100 times.

[0066] Figure 8 This is a microscope picture of the photoresist sample after cleaning with the photoresist stripping solution prepared in Comparative Example 4, magnified 100 times. DETAILED DESCRIPTION

[0067] The present invention is further described below with reference to the examples. The description of the technical features described below is based on representative embodiments and specific examples of the present invention, but the present invention is not limited to these embodiments and specific examples. It should be noted that:

[0068] Unless otherwise stated, the units used in this specification are all international standard units, and the numerical values ​​and numerical ranges appearing in the present invention should be understood to include the inevitable systematic errors in industrial production.

[0069] In this specification, the numerical range expressed using "a numerical value A to a numerical value B" means a range including the endpoints numerical values ​​A and B.

[0070] In the present specification, a numerical range expressed using "above" or "below" means a numerical range including the number.

[0071] In this specification, the word "may" means both performing a certain process and not performing a certain process.

[0072] In this specification, the use of "optional" or "optional" indicates that certain substances, components, execution steps, application conditions and other factors are used or not used.

[0073] In this specification, when "normal temperature" or "room temperature" is used, the temperature may be 15-25°C.

[0074] In this manual, the reagents or instruments used without indicating the manufacturer are all conventional products that can be obtained through commercial purchase.

[0075] Examples 1-8

[0076] Examples 1-8 disclose a variety of photoresist stripping solutions, the components and weight ratios of which are shown in Table 1, and the preparation methods thereof are as follows:

[0077] Step 1: Weigh each component according to mass, add the polar solvent into the container, turn on the stirring, add the quaternary ammonium base, alcohol amine and deionized water during the stirring process, and stir for 1.5 hours; the solution is clear and transparent;

[0078] Step 2: Add sulfonylhydrazide corrosion inhibitor and pyridinethiourea corrosion inhibitor during stirring, stir the solution for 2 hours until it is uniform and transparent, and filter with filter elements with pore sizes of 0.2 μm and 0.1 um in turn to prepare a photoresist stripping solution.

[0079] The stirring temperature is controlled at 35°C.

[0080] Table 1 Components and weight ratios of photoresist stripping solutions in Examples 1-8

[0081]

[0082]

[0083] Comparative Examples 1-4

[0084] Comparative Examples 1-4 disclose a variety of photoresist stripping solutions, the components and weight ratios of which are shown in Table 2, and the preparation methods thereof are the same as those of Example 1.

[0085] Table 2 Components and weight ratios of photoresist stripping solutions of comparative examples 1-4

[0086]

[0087] The various properties of the above embodiments or comparative examples are tested below.

[0088] Cu corrosion rate test method: A 2cm×2cm Cu sheet was soaked in 80℃ photoresist stripping solution for 60 minutes, then rinsed with ultrapure water for 2 minutes, and then taken out and blown dry with nitrogen.

[0089] The appearance changes were observed by OM, and the corrosion rate was tested by the resistivity of the Cu electrode before and after cleaning using a four-point probe method.

[0090] GaAs corrosion rate test method: A 1cm×1cm GaAs chip was soaked in 80℃ photoresist stripping solution for 30 minutes, then rinsed with ultrapure water for 2 minutes, and then taken out and blown dry with nitrogen.

[0091] The appearance changes were observed by OM, and the corrosion rate of the GaAs chip was tested by an electrochemical workstation.

[0092] Cleaning effect test method: Immerse the sample coated with 5μm thick positive photoresist in 80℃ photoresist stripping solution for 30 minutes, take it out and rinse it with ultrapure water for 5 minutes, then blow it dry with nitrogen, and observe the chip surface with a microscope.

[0093] The above corrosion rate test results are shown in Table 3. It can be seen that the corrosion rates of the photoresist stripping solutions prepared according to Examples 1 to 8 on Cu and GaAs are less than In Comparative Examples 1 to 3, the photoresist stripping solution using only one corrosion inhibitor or without any corrosion inhibitor has strong corrosiveness to Cu and GaAs. This is because the use of sulfonylhydrazine corrosion inhibitors and pyridinethiourea corrosion inhibitors alone in the photoresist stripping solution can protect Cu and GaAs to a certain extent, but the compactness of the protective film layer is poor. Sulfonylhydrazine corrosion inhibitors and pyridinethiourea corrosion inhibitors can play a synergistic role after compounding, and the adsorption layers and protective films of the two can be superimposed to improve the protection effect.

[0094] Table 3 Test data

[0095]

[0096] Figure 1 This is a microscope picture of the Cu chip magnified 100 times. Figure 2 This is a microscope picture of a Cu chip after being soaked in the photoresist stripping solution prepared in Example 1 and magnified 100 times. There is no obvious corrosion on the Cu chip after cleaning. Figure 3 This is a microscope picture of a Cu chip after being immersed in the photoresist stripping solution prepared in Comparative Example 3 after being magnified 100 times. As can be seen from the figure, no sulfonylhydrazine and pyridinethiourea corrosion inhibitors were added in Comparative Example 3, and the Cu chip was severely corroded after immersion. Figure 4 This is a microscope picture of the GaAs chip magnified 100 times. Figure 5 This is a microscope picture of a GaAs chip after being soaked in the photoresist stripping solution prepared in Example 1 and magnified 100 times. There is no obvious corrosion on the GaAs chip after cleaning. Figure 6 This is a microscope picture of a GaAs chip after being immersed in the photoresist stripping solution prepared in Comparative Example 3, after being magnified 100 times. As can be seen from the figure, no sulfonylhydrazine and pyridinethiourea corrosion inhibitors were added in Comparative Example 3, and the GaAs was severely corroded after immersion, and the surface GaAs pattern was completely corroded. Figure 7 This is a microscope picture of the resist sample after being cleaned with the photoresist stripping solution prepared in Example 1 after being magnified 100 times. After being cleaned with Example 1, there is no photoresist residue on the resist sample. Figure 8This is a microscope picture of a photoresist sample after cleaning with the photoresist stripping solution prepared in Comparative Example 4, magnified 100 times. Figure 8 It can be seen that in Comparative Example 4, no quaternary ammonium base was added, the photoresist was not completely cracked, and there was photoresist residue on the surface of the photoresist-carrying sample after cleaning.

[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A photoresist stripping solution, characterized in that: The composition includes the following components in weight ratio:

2. The photoresist stripping solution according to claim 1, characterized in that: The quaternary ammonium base is one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, trimethylphenylammonium hydroxide, tributylethylammonium hydroxide, phenyltriethylammonium hydroxide, trimethylhydroxyethylammonium hydroxide, diethyldimethylammonium hydroxide, triethylmethylammonium hydroxide, ethyltrimethylammonium hydroxide, benzyldi(2-hydroxyethyl)methylammonium hydroxide, benzyl(2-hydroxyethyl)dimethylammonium hydroxide and tri(2-hydroxyethyl)methylammonium hydroxide.

3. The photoresist stripping solution according to claim 1, characterized in that: The alcoholamine is one or more of monoethanolamine, isopropanolamine, diethanolamine, triethanolamine, 3-amino-1-propanol, 2-amino-1-butanol, 3-diethylamino-1-propanol, diglycolamine, dibutanolamine, 1-amino-2-butanol, methylethanolamine, 2-butylaminoethanol, diisopropanolamine, methyldiethanolamine and N-butyldiethanolamine.

4. The photoresist stripping solution according to claim 1, characterized in that: The polar solvent is one or more of N-methylpyrrolidone, N-ethylpyrrolidone, 2,5-dimethylpyrrolidone, 1,4-dimethyl-2-pyrrolidone, N-hydroxyethyl-2-pyrrolidone, N-cyclohexylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, N-ethylmorpholinone, N-cyclohexylmorpholinone, N,N-dimethylacetamide, N,N-dimethylpropionamide, N-methylformamide, N-ethylformamide, dimethyl sulfoxide, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether and dipropylene glycol butyl ether.

5. The photoresist stripping solution according to claim 1, characterized in that: The sulfonylhydrazine corrosion inhibitor is one or more of methanesulfonylhydrazine, dansylhydrazine, p-toluenesulfonylhydrazine, 4-benzenesulfonylhydrazine, naphthalene-2-sulfonylhydrazine, p-aminobenzenesulfonylhydrazine, 3-aminobenzenesulfonylhydrazine, p-hydroxybenzenesulfonylhydrazine, pyridine-3-sulfonylhydrazine, 4-methoxybenzenesulfonylhydrazine, 4-isopropylbenzenesulfonylhydrazine, 4-ethylbenzenesulfonylhydrazine, 4-ethoxybenzenesulfonylhydrazine, 2,4-dimethylbenzenesulfonylhydrazine, 2,5-dimethylbenzenesulfonylhydrazine and 2-nitrobenzenesulfonylhydrazine.

6. The photoresist stripping solution according to claim 1, characterized in that: The pyridinylthiourea corrosion inhibitor is one or more of 2-pyridinylthiourea, 3-pyridinylthiourea, n-phenyl-n-2-pyridinylthiourea, N-(4-methyl-2-pyridine)thiourea, p-pyridinylthiourea, N-(5-methylpyridin-2-yl)thiourea, 4-(2-pyridinyl)semicarbazide and 1-ethyl-3-pyridin-2-ylthiourea.

7. The photoresist stripping solution according to claim 1, characterized in that: The mass ratio of the pyridinethiourea corrosion inhibitor to the sulfonylhydrazide corrosion inhibitor is 5:1-1:

5.

8. The method for preparing the photoresist stripping solution according to any one of claims 1 to 7, characterized in that: The following steps are involved: Step 1: Weigh each component according to mass, add the polar solvent into a container, add the quaternary ammonium base, alcoholamine and deionized water under stirring, and stir until the solution is clear and transparent; Step 2: Add sulfonylhydrazide corrosion inhibitor and pyridinethiourea corrosion inhibitor under stirring, and stir until the solution is uniform and transparent to prepare a photoresist stripping solution.

9. Use of the photoresist stripping solution according to any one of claims 1 to 7 in the field of photoresist stripping of III-V compound substrates and metal substrates.

10. The use according to claim 9, characterized in that: The photoresist stripping solution is suitable for stripping photoresists from GaAs substrates and Cu substrates.

Images