Glass core plate of FCBGA packaging substrate and manufacturing method thereof
By using glass plate and laser ablation technology with low thermal expansion coefficient and high glass transition temperature, the problem of FCBGA packaging substrate warping during the thermal process is solved, the reliability and yield of the substrate is improved, the production cost is reduced, and the production cost is avoided Environmental pollution.
Patent Information
- Application Number
- CN202310694333.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-12
- Publication Date
- 2024-12-13
AI Technical Summary
FCBGA packaging substrates are prone to warping during the thermal process, resulting in poor packaging and affecting product quality and yield. Existing materials such as organic resins and ceramic materials do not perform well at high temperatures, making it difficult to form continuous metal seed layers, affecting reliability.
The glass plate with a low thermal expansion coefficient and a high glass transition temperature are used as the core plate material, and a metal seed layer and conductive lines are formed on its surface. Through laser ablation and etching, X-shaped through holes and patterned shielding layers are formed to remove Metal seed bottom, reducing warpage and improving reliability.
Improves the stability and reliability of the substrate, reduces warping problems, improves product yield, provides a good packaging platform for the mounting of electronic components and chips, reduces production costs, and avoids chemical etching. Pollution to the environment.
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Figure CN119132977A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of core board manufacturing and relates to a glass core board of a FCBGA packaging substrate and a manufacturing method thereof. Background Art
[0002] In recent years, with the continuous development of high functionality and miniaturization of electronics, the requirements for FCBGA packaging substrates have become increasingly higher. FCBGA packaging substrates have a multi-layer structure. During the production process of FCBGA packaging substrates, due to the different thermal expansion coefficients of each layer of material, the packaging substrate is prone to warping after being pressed during the thermal process. The cause of the warping is related to the material used for the core board on the one hand, and the processing process on the other hand, because the substrate will be affected by mechanical stress, thermal mismatch stress and chemical factors during the processing, which will cause the substrate to warp. Excessive substrate warping usually leads to poor contact between the substrate and the solder joints on the chip or circuit board during packaging, or some pads on the substrate cannot contact the solder and cannot be soldered during wave soldering, which seriously affects product quality and then affects the product yield.
[0003] At present, organic resin or ceramic material is usually selected as the core material. Organic resin cannot withstand the high temperature caused by thermal lamination, and the thermal expansion coefficient of organic resin is very large, so it is easy to break at the lamination point, causing reliability problems. Although ceramic materials can withstand the high temperature caused by thermal lamination, there are many pores on the surface of the material, making it difficult to form a thin and continuous metal seed layer, which in turn affects the reliability of the package substrate.
[0004] Therefore, there is an urgent need to find a method for manufacturing a glass core board of a FCBGA packaging substrate that can improve the warping problem of the packaging substrate and enhance the reliability of the packaging substrate. Summary of the invention
[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a glass core board of a FCBGA packaging substrate and a manufacturing method thereof, so as to solve the problem in the prior art that the reliability and yield of the substrate are affected by the high warping during the manufacturing process of the core board.
[0006] To achieve the above-mentioned object and other related objects, the present invention provides a method for manufacturing a glass core board of a FCBGA packaging substrate, comprising the following steps:
[0007] Providing a glass plate including a first surface and a second surface disposed opposite to each other, and defining at least one of the first surface and the second surface as a functional surface of the glass plate;
[0008] forming a metal seed layer covering the functional surface of the glass plate, and forming a shielding layer on the surface of the metal seed layer facing away from the glass plate;
[0009] patterning the shielding layer to form a plurality of first openings in the shielding layer to expose the metal seed layer;
[0010] forming a conductive circuit filling the first opening, and removing the shielding layer to obtain a second opening located between two adjacent conductive circuits;
[0011] The metal seed layer at the bottom of the second opening is removed to obtain a glass core board of the FCBGA packaging substrate.
[0012] Optionally, the glass plate has a thickness ranging from 0.1 mm to 3 mm.
[0013] Optionally, when both the first surface and the second surface serve as functional surfaces, a plurality of through holes are formed in the glass plate and are arranged at intervals and penetrate the glass plate, and a cross-sectional shape of the through holes is X-shaped.
[0014] Optionally, the method of forming the through hole comprises laser drilling.
[0015] Optionally, the metal seed layer includes a metal transition layer and a metal conductive layer stacked in sequence.
[0016] Optionally, the thickness of the metal transition layer is in the range of 0.05 μm to 1 μm, and the thickness of the metal conductive layer is in the range of 0.1 μm to 2 μm.
[0017] Optionally, a method of forming the metal seed layer includes physical vapor deposition.
[0018] Optionally, after forming the metal seed layer and before forming the shielding layer, the method further includes a step of processing the surface of the metal seed layer.
[0019] Optionally, the method of forming the shielding layer includes vacuum lamination.
[0020] Optionally, the method of forming the conductive circuit includes electroplating.
[0021] Optionally, a method of removing the metal seed layer at the bottom of the second opening comprises excimer laser ablation.
[0022] The present invention also provides a glass core board, and the glass core board is manufactured by adopting the manufacturing method of the glass core board of the FCBGA packaging substrate described above.
[0023] As described above, the glass core board of the FCBGA packaging substrate of the present invention and the manufacturing method thereof improve the material of the core board in the FCBGA packaging substrate, and adopt the glass board with a lower thermal expansion coefficient and a higher glass transition temperature as the core board of the glass core board in the FCBGA packaging substrate. The thermal expansion coefficient of the glass board is similar to the thermal expansion coefficient of the electronic components to be packaged, which increases the temperature range of stable operation of the substrate, improves the reliability of the substrate, reduces the warping of the substrate, and improves the warping problem in the process of using the organic core board to make the substrate, improves the coplanarity of the substrate, improves the yield of the product, and provides a good packaging platform for the subsequent mounting of electronic components or chips. Due to the use of the glass board, the difficulty of material selection and graphic design of the product is reduced, which is conducive to reducing production costs. The metal seed layer is etched by laser burning, which avoids the damage to the conductive circuit caused by etching the metal seed layer by chemical etching, further improves the reliability of the substrate, and no waste gas or waste liquid that pollutes the environment is generated during the etching process, which avoids pollution to the environment during the etching process, and has high industrial utilization value. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 Shown is a process flow chart of a method for manufacturing a glass core board of a FCBGA package substrate of the present invention.
[0025] Figure 2 A schematic diagram showing the cross-sectional structure of a glass plate in a method for manufacturing a glass core plate of an FCBGA package substrate of the present invention.
[0026] Figure 3 It is a schematic diagram showing the cross-sectional structure after forming through holes in the method for manufacturing the glass core board of the FCBGA package substrate of the present invention.
[0027] Figure 4 It is a schematic diagram showing the cross-sectional structure after forming a metal seed layer in the method for manufacturing a glass core board of an FCBGA package substrate of the present invention.
[0028] Figure 5 It is a schematic diagram of the cross-sectional structure after the patterning of the shielding layer in the method for manufacturing the glass core board of the FCBGA packaging substrate of the present invention.
[0029] Figure 6 It is a schematic diagram of the cross-sectional structure after forming conductive circuits and interconnected conductive pillars in the method for manufacturing the glass core board of the FCBGA packaging substrate of the present invention.
[0030] Figure 7 It is a schematic diagram of the cross-sectional structure after removing the shielding layer in the method for manufacturing the glass core board of the FCBGA packaging substrate of the present invention.
[0031] Figure 8 It is a schematic diagram of the cross-sectional structure after removing the metal seed layer at the bottom of the second opening in the method for manufacturing the glass core board of the FCBGA package substrate of the present invention.
[0032] Description of Figure Numbers
[0033] 1 Glass Pane
[0034] 11 Through hole
[0035] 2 Metal seed layer
[0036] 21 Metal transition layer
[0037] 22 Metal conductive layer
[0038] 3 Shielding layer
[0039] 31 First Opening
[0040] 4 Conductive circuit
[0041] 41 Second Opening
[0042] 42 Interconnection conductive pillars DETAILED DESCRIPTION
[0043] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.
[0044] See also Figures 1 to 8 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.
[0045] Embodiment 1
[0046] This embodiment provides a method for manufacturing a glass core board of a FCBGA packaging substrate. Figure 1 FIG. 1 is a process flow chart of the method for manufacturing the glass core board, comprising the following steps:
[0047] S1: providing a glass plate including a first surface and a second surface disposed opposite to each other, and defining at least one of the first surface and the second surface as a functional surface of the glass plate;
[0048] S2: forming a metal seed layer covering the functional surface of the glass plate, and forming a shielding layer on the surface of the metal seed layer facing away from the glass plate;
[0049] S3: patterning the shielding layer to form a plurality of first openings in the shielding layer that expose the metal seed layer;
[0050] S4: forming a conductive circuit filling the first opening, and removing the shielding layer to obtain a second opening located between two adjacent conductive circuits;
[0051] S5: removing the metal seed layer at the bottom of the second opening to obtain a glass core board of the FCBGA package substrate.
[0052] See also Figures 2 to 5 , perform the steps S1, S2 and S3: provide a glass plate 1 including a first surface and a second surface arranged opposite to each other, and define at least one of the first surface and the second surface as a functional surface of the glass plate; form a metal seed layer 2 covering the functional surface of the glass plate 1, and form a shielding layer 3 on the surface of the metal seed layer 2 away from the glass plate 1; pattern the shielding layer 3 to form a plurality of first openings 31 in the shielding layer 3 to expose the metal seed layer 2.
[0053] Specifically, Figure 2 , which is a schematic diagram of the cross-sectional structure of the glass plate 1 , wherein the glass plate 1 is prepared by a float method, a fusion method or other suitable methods.
[0054] As an example, the thickness of the glass plate 1 ranges from 0.1 mm to 3 mm. For example, the thickness of the glass plate 1 may be 0.32 mm, 0.4 mm, 1 mm, 1.5 mm or 2 mm.
[0055] Specifically, the shape of the glass plate 1 includes square, round or other suitable shapes.
[0056] Specifically, under the condition of ensuring the performance of the substrate, the size of the glass plate 1 can be selected according to actual conditions and is not limited here.
[0057] Specifically, the humidity coefficient of the glass plate 1 is "zero", that is, the manufacture of the glass plate 1 is not affected by humidity.
[0058] Specifically, the glass transition temperature of the glass plate 1 is about 800° C., which can expand the operating temperature range of the glass core plate and ensure the stability of the substrate performance within the temperature range.
[0059] Specifically, the definition of the functional surface of the glass plate 1 can be selected according to actual conditions, for example, it can be the first surface, the second surface, or both the first surface and the second surface.
[0060] As an example, Figure 3 As shown, it is a schematic diagram of the cross-sectional structure after the through hole 11 is formed. When the first surface and the second surface are both used as functional surfaces, the glass plate 1 is further formed with a plurality of through holes 11 that are spaced apart and penetrate the glass plate 1, and the cross-sectional shape of the through hole 11 is X-shaped, and the through hole openings of the through hole 11 are respectively located in the first surface and the second surface.
[0061] Specifically, while ensuring the performance of the glass core board, the size of the opening of the through hole 11 located on the first surface can be selected according to actual conditions, and is not limited here; the size of the opening of the through hole 11 located on the second surface can be selected according to actual conditions, and is not limited here. In this embodiment, the sizes of the openings of the through holes 11 located on the first surface and the second surface are the same.
[0062] As an example, the method for forming the through hole 11 includes laser drilling or other suitable methods. In this embodiment, the through hole 11 is formed by laser drilling.
[0063] Specifically, under the condition of ensuring the performance of the glass core board, the distance between two adjacent through holes 1 can be selected according to actual conditions, and is not limited here.
[0064] Specifically, before forming the metal seed layer 2 , a step of roughening the exposed surface of the glass plate 1 is also included to enhance the bonding force between the metal seed layer 2 and the glass plate 1 .
[0065] As an example, Figure 4 , which is a schematic diagram of the cross-sectional structure after the metal seed layer 2 is formed, wherein the metal seed layer 2 includes a metal transition layer 21 and a metal conductive layer 22 which are stacked in sequence.
[0066] Specifically, the metal transition layer 21 is used to enhance the bonding force between the metal conductive layer 22 and the glass plate 1 to prevent the metal conductive layer 22 from warping and improve the reliability of the glass core plate.
[0067] Specifically, the metal seed layer 2 is provided to facilitate the conductive circuit in the subsequent process (see the subsequent Figure 6 )’s formation.
[0068] As an example, the thickness of the metal transition layer 21 ranges from 0.05 μm to 1 μm, and the thickness of the metal conductive layer 22 ranges from 0.1 μm to 2 μm. For example, the thickness of the metal transition layer 21 may be 0.1 μm, 0.3 μm, or 0.6 μm, and the thickness of the metal conductive layer 22 may be 0.2 μm, 0.8 μm, or 1.6 μm.
[0069] Specifically, the material of the metal transition layer 21 includes titanium, tantalum or other suitable metal materials; the material of the metal conductive layer 22 includes copper, platinum or other suitable metal conductive materials. In this embodiment, a titanium layer or a titanium-tungsten combination layer is used as the metal transition layer 21, and a copper layer is used as the metal conductive layer 22. The titanium layer or the titanium-tungsten combination layer can improve the adhesion between the metal conductive layer and the glass plate, and the copper layer can improve the adhesion between the metal transition layer 21 and the shielding layer (see the following Figure 5 ) and the conductive circuit, and can form a good shielding layer and conductive circuit.
[0070] As an example, the method of forming the metal seed layer 2 includes physical vapor deposition or other suitable methods. For example, the metal seed layer 2 can be formed by magnetron sputtering or evaporation.
[0071] Specifically, the method of forming the metal transition layer 21 and the method of forming the metal conductive layer 22 may be the same or different.
[0072] Specifically, when both the first surface and the second surface of the glass plate 1 are functional layers, when the through hole 11 is formed in the glass plate 1 , the formed metal seed layer 2 also covers the inner wall of the through hole 11 .
[0073] Specifically, Figure 5 , which is a schematic diagram of the cross-sectional structure after the shielding layer 3 is patterned, wherein the shielding layer 3 includes a photoresist layer, a dry film or other suitable material layer with photoresist properties.
[0074] As an example, after forming the metal seed layer 2 and before forming the shielding layer 3 , the method further includes a step of processing the surface of the metal seed layer 2 .
[0075] Specifically, the method for treating the surface of the metal seed layer 2 includes ion treatment or other suitable methods.
[0076] Specifically, by processing the surface of the metal seed layer 2 to roughen the surface of the metal seed layer 2, the bonding force between the shielding layer 3 and the metal seed layer 2 can be improved, the accuracy of the pattern can be improved, and the reliability of the manufactured product can be improved.
[0077] Specifically, under the condition of ensuring the performance of the glass core board, the thickness of the shielding layer 3 can be selected according to actual conditions and is not limited here.
[0078] Specifically, the method of forming the shielding layer 3 includes vacuum lamination or other suitable methods. In this embodiment, the shielding layer 3 is formed by vacuum lamination to ensure the bonding force between the shielding layer 3 and the metal seed layer 2.
[0079] Specifically, the method for patterning the shielding layer 3 is a commonly used method for developing photoresist materials, which will not be described in detail here.
[0080] Specifically, when the through holes 11 are formed in the glass plate 1 , after the shielding layer 3 is patterned, the first openings 31 still expose the through holes 11 , and each through hole 11 corresponds to two first openings 31 that expose the through holes 11 .
[0081] Specifically, under the condition of ensuring the quality of the conductive circuit formed subsequently, the opening size of the first opening 31 can be selected according to actual conditions and is not limited here.
[0082] See also Figures 6 to 8 , perform step S4 and step S5: form a conductive circuit 4 filling the first opening 31, and remove the shielding layer 3 to obtain a second opening 41 located between two adjacent conductive circuits 4; remove the metal seed layer 2 at the bottom of the second opening 41 to obtain a glass core board of the FCBGA packaging substrate.
[0083] Specifically, Figure 6 , which is a schematic diagram of the cross-sectional structure after the conductive circuit 4 is formed, and the material of the conductive circuit 4 includes copper or other suitable conductive materials. In this embodiment, the first opening 31 is filled with a copper layer to obtain the conductive circuit 4.
[0084] As an example, the method of forming the conductive circuit 4 includes electroplating or other suitable methods. In this embodiment, the conductive circuit 4 is formed by electroplating, and copper sulfate solution is used as the electroplating solution.
[0085] Specifically, when the through hole 11 is formed in the glass plate 1 , while the conductive circuit 4 is formed, an interconnecting conductive column 42 filling the through hole 11 is also formed. The interconnecting conductive column 42 is used to connect the functional surface of the glass core plate.
[0086] Specifically, the thickness of the conductive circuit 4 is in the range of 15 μm to 20 μm, for example, the thickness of the conductive circuit 4 may be 17 μm or 19 μm. The thickness here refers to the distance between the lower surface of the conductive circuit 4 and the upper surface of the conductive circuit 4 .
[0087] Specifically, the method for removing the shielding layer 3 is a commonly used method for removing photoresist materials. For example, a sodium hydroxide solution may be selected to wash away the shielding layer 3 .
[0088] Specifically, Figure 7 As shown, it is a schematic diagram of the cross-sectional structure after removing the shielding layer 3. The opening size of the second opening 41 is the distance between two adjacent conductive circuits 4. Under the condition of ensuring the performance of the glass core board, the distance between two adjacent conductive circuits 4 (that is, the opening size of the second opening 41) can be selected according to actual conditions and is no longer restricted here.
[0089] As an example, Figure 8 As shown, it is a schematic diagram of the cross-sectional structure after the metal seed layer 2 at the bottom of the second opening 41 is removed. The method for removing the metal seed layer 2 at the bottom of the second opening 41 includes laser ablation or other suitable physical etching methods. In this embodiment, the metal seed layer 2 at the bottom of the second opening 41 is removed by excimer laser ablation.
[0090] Specifically, by adopting the laser ablation method to remove the metal seed layer 2 at the bottom of the second opening 41, it is avoided that wet etching, gas dry etching or other chemical etching methods are used to remove the metal seed layer 2 while damaging the conductive circuit 4, affecting the reliability of the glass core board, and no chemical waste gas or waste liquid that pollutes the environment is generated, thereby avoiding environmental pollution and being beneficial to environmental protection.
[0091] Specifically, since the glass plate 1 has a high glass transition temperature and a small thermal expansion coefficient, the substrate can work stably in a larger temperature range, thereby improving the reliability of the substrate, reducing the difficulty of material selection and graphic design of the product, and helping to reduce production costs.
[0092] The method for manufacturing the glass core board of the FCBGA packaging substrate of this embodiment adopts the glass board 1 with a high glass transition temperature and a small thermal expansion coefficient as the core board of the glass core board in the FCBGA packaging substrate, thereby increasing the temperature range of stable operation of the substrate, improving the reliability of the substrate, reducing the difficulty of material selection and graphic design of the product, and helping to reduce production costs; the metal seed layer 2 is etched by laser ablation, thereby avoiding damaging the conductive circuit 4 while etching the metal seed layer 2 by chemical methods, further improving the reliability of the substrate, and no waste liquid or waste gas that pollutes the environment is generated during the etching of the metal seed layer 2, thereby avoiding causing environmental pollution.
[0093] Embodiment 2
[0094] This embodiment provides a glass core board, such as Figure 8 , which is a schematic diagram of the cross-sectional structure of the glass core board. The glass core board is manufactured using the manufacturing method of the glass core board described in Example 1.
[0095] Specifically, the glass core board includes a glass board 1, a metal seed layer 2 and a conductive circuit 4, wherein the glass board 1 includes a first surface and a second surface arranged opposite to each other, and at least one of the first surface and the second surface serves as a functional surface of the glass board; the metal seed layer 2 is located on the functional surface of the glass board 1, and the metal seed layer 2 is provided with a plurality of second openings 41 penetrating the metal seed layer 2, and the bottom surface of the second opening 41 exposes the glass board 1; the conductive circuit 4 is stacked directly above the metal seed layer 2.
[0096] Specifically, when the first surface and the second surface are both functional surfaces, the glass plate 1 is further provided with a plurality of through holes 11 which are arranged at intervals and penetrate the glass plate 1, and the cross-sectional shape of the through hole 11 is X-shaped, that is, the aperture from the opening of the through hole 11 located on the first surface to the opening of the through hole 11 on the second surface first decreases to the minimum and then increases.
[0097] Specifically, the inner wall of the through hole 11 is also covered with the metal seed layer 2 , and the through hole 11 is also provided with an interconnecting conductive column 42 filling the through hole 11 . The metal seed layer 2 located on the inner wall of the through hole 11 wraps the side wall of the interconnecting conductive column 42 .
[0098] Specifically, the metal seed layer 2 includes a metal transition layer 21 and a metal conductive layer 22 which are stacked in sequence.
[0099] Specifically, the material of the conductive circuit 4 includes copper or other suitable conductive materials; the material of the interconnecting conductive pillars 42 includes copper or other suitable conductive materials.
[0100] Specifically, since the glass plate 1 has a smaller thermal expansion coefficient and is close to the thermal expansion coefficient of the packaged electronic components, the thermal mismatch stress between the glass plate 1 and the metal seed layer 2 and the conductive circuit 4 is small, the warping of the substrate is reduced and the reliability of the substrate is improved.
[0101] Specifically, since the glass plate 1 with a lower thermal expansion coefficient is used as the insulating core plate in the glass core plate, and the thermal expansion coefficient of the glass plate 1 is similar to the thermal expansion coefficient of the packaged electronic components, the warping problem in the processing process of manufacturing the substrate using the core plate of organic material is improved, the reliability of the substrate is improved, the coplanarity of the substrate is improved, the yield of the product is improved, and a good packaging platform is provided for the subsequent mounting of electronic components or chips.
[0102] The glass core board of this embodiment is manufactured by adopting the manufacturing method of the glass core board of the FCBGA packaging substrate described in Example 1, and the glass plate 1 with a lower thermal expansion coefficient is used as the insulating core board in the glass core board. The thermal expansion coefficient of the glass plate 1 is similar to the thermal expansion coefficient of the electronic components to be packaged, which improves the warping problem in the process of using the organic core board to manufacture the substrate, improves the reliability of the substrate, improves the coplanarity of the substrate, improves the yield of the product, and provides a good packaging platform for the subsequent mounting of electronic components or chips.
[0103] In summary, the glass core board of the FCBGA packaging substrate of the present invention and its manufacturing method adopt a glass plate with a low thermal expansion coefficient and a high glass transition temperature as the core board of the glass core board in the FCBGA packaging substrate, and the thermal expansion coefficient of the glass plate is similar to the thermal expansion coefficient of the electronic components to be packaged, which increases the temperature range of stable operation of the substrate, improves the reliability of the substrate, improves the warping problem in the process of using the organic core board to make the substrate, improves the coplanarity of the substrate, improves the yield of the product, and provides a good packaging platform for the subsequent mounting of electronic components or chips. Due to the use of the glass plate, the difficulty of material selection and graphic design of the product is reduced, which is conducive to reducing production costs; the metal seed layer covering the functional surface of the glass plate is etched by a laser burning method, which avoids the damage to the conductive circuit caused by etching the metal seed layer by a chemical etching method, further improves the reliability of the substrate, and at the same time, no waste gas or waste liquid that pollutes the environment is generated during the etching process, which avoids pollution to the environment during the etching process. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.
[0104] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.
Claims
1. A method for manufacturing a glass core board of a FCBGA packaging substrate, It is characterized in that The following steps are involved: Providing a glass plate including a first surface and a second surface disposed opposite to each other, and defining at least one of the first surface and the second surface as a functional surface of the glass plate; forming a metal seed layer covering the functional surface of the glass plate, and forming a shielding layer on the surface of the metal seed layer facing away from the glass plate; patterning the shielding layer to form a plurality of first openings in the shielding layer to expose the metal seed layer; forming a conductive circuit filling the first opening, and removing the shielding layer to obtain a second opening located between two adjacent conductive circuits; The metal seed layer at the bottom of the second opening is removed to obtain a glass core board of the FCBGA packaging substrate.
2. The method for manufacturing the glass core board of the FCBGA packaging substrate according to claim 1, Features: The thickness of the glass plate ranges from 0.1 mm to 3 mm.
3. The method for manufacturing the glass core board of the FCBGA packaging substrate according to claim 1, Features: When both the first surface and the second surface serve as functional surfaces, a plurality of through holes are formed in the glass plate and are arranged at intervals and penetrate the glass plate, and the cross-sectional shape of the through holes is X-shaped.
4. The method for manufacturing the glass core board of the FCBGA packaging substrate according to claim 3, Features: The method of forming the through hole includes laser drilling.
5. The method for manufacturing the glass core board of the FCBGA packaging substrate according to claim 1, Features: The metal seed layer includes a metal transition layer and a metal conductive layer stacked in sequence.
6. The method for manufacturing the glass core board of the FCBGA packaging substrate according to claim 5, Features: The thickness of the metal transition layer is in the range of 0.05 μm to 1 μm, and the thickness of the metal conductive layer is in the range of 0.1 μm to 2 μm.
7. The method for manufacturing the glass core board of the FCBGA packaging substrate according to claim 1, Features: The method of forming the metal seed layer includes physical vapor deposition.
8. The method for manufacturing the glass core board of the FCBGA package substrate according to claim 1, Features: After forming the metal seed layer and before forming the shielding layer, the method further includes a step of processing the surface of the metal seed layer.
9. The method for manufacturing the glass core board of the FCBGA package substrate according to claim 1, Features: The method of forming the shielding layer includes vacuum lamination.
10. The method for manufacturing the glass core board of the FCBGA package substrate according to claim 1, Features: The method of forming the conductive traces includes electroplating.
11. The method for manufacturing the glass core board of the FCBGA package substrate according to claim 1, Features: The method of removing the metal seed layer at the bottom of the second opening includes excimer laser ablation.
12. A glass core board, It is characterized in that The glass core board is manufactured by the method for manufacturing a glass core board of a FCBGA packaging substrate according to any one of claims 1 to 11.
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