Nitride HEMT device with light-emitting structure and preparation method thereof

Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to a nitride HEMT device with a light-emitting structure and a preparation method of the nitride HEMT device. The HEMT device comprises a heterojunction epitaxial wafer, a light-emitting structure, a grid electrode, a source electrode and a drain electrode. The heterojunction epitaxial wafer sequentially comprises a substrate, a buffer layer formed by III-group nitride, a channel layer and a barrier layer from bottom to top. The light-emitting structure is prepared through a selective area epitaxial growth technology and sequentially comprises a quantum well layer, a P-type nitride layer, a current expansion layer and a P-type electrode from bottom to top. Wherein the quantum well layer can also be used as a barrier layer, and the P-type electrode and the drain electrode are interconnected through metal. According to the invention, the drain electrode of the nitride device is connected with the P-type electrode of the light-emitting structure, so that when the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, photons are incident into the device body, electrons in various deep energy levels in the device body are effectively accelerated to break away from traps, the current collapse effect of the device is effectively inhibited, and the stability of the device is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuits, and in particular relates to a nitride HEMT device with a light-emitting structure and a method for preparing the device. Background Art

[0002] Group III nitrides represented by GaN are becoming one of the most popular semiconductor materials. GaN has excellent material properties, and the electron saturation drift velocity is as high as 2.5×10 7 cm / s, with a bandgap of up to 3.4eV and a breakdown field strength of up to 3.3MV / cm. It has good thermal stability and radiation resistance, and there are spontaneous polarization and piezoelectric polarization effects at the AlGaN / GaN heterojunction interface, which can form a high-mobility and high-concentration two-dimensional electron gas. Therefore, GaN has become a hot topic of research at home and abroad with its excellent characteristics, and has been widely used in the fields of power electronics, radio frequency electronics, and optoelectronics.

[0003] Although high-power electron mobility transistors (HEMTs) using AlGaN / GaN have excellent performance, they are still inevitably affected by electron traps. For example, dangling bonds or natural oxides on the surface of AlGaN / GaN form surface traps; the interface state between the dielectric / passivation layer and the heterojunction epitaxial wafer introduces interface traps; defects / dislocations or compensating doping (such as carbon) that are critical for providing high voltage off-state blocking capability will cause buffer layer traps. Under high electric fields, these traps capture electrons, which will cause current collapse, increase conduction losses and make the device unstable.

[0004] Due to the large ionization energy of deep energy levels, the release of electrons from deep energy level traps may be very slow. It has been proven that light irradiation can effectively assist electrons to escape from traps and suppress current collapse in AlGaN / GaN HEMTs. Technicians have proposed to irradiate active devices with external power sources to improve the current collapse phenomenon. However, power devices usually use opaque Si as the substrate material, and light irradiation from the back side usually cannot penetrate the substrate, which limits the effect of using off-chip or external light sources to excite traps. So far, photon-assisted electron escape from traps through on-chip integrated light sources has become a very important research direction for technicians in this field.

[0005] The prior art also discloses some solutions that utilize illumination inside the device to assist electrons to escape from traps. For example, China Invention Patent Authorization Announcement No. CN 106783994 B discloses an enhanced HEMT device that suppresses the current collapse effect and its preparation method. This solution directly integrates a quantum well structure in the gate region and the non-gate region of the enhanced HEMT device, so that when the device is in the on state, it can simultaneously emit light. The light can effectively radiate the surface area between the gate drain and the gate source and penetrate deep into the material, which can accelerate the release process of electrons captured by various traps, thereby effectively suppressing the current collapse effect of the device.

[0006] The present invention designs the quantum well structure between the gate and the drain, which is close to the traps in the surface area and the internal area of ​​the material, and can improve the efficiency of trapping electrons through photon release. For both normally-on and normally-off nitride HEMT devices, the current collapse effect of the device can be suppressed by integrating the light-emitting structure. At the same time, the quantum well layer will not be constrained by the gate voltage of the device, and the device can be illuminated by adjusting the position of the quantum well structure and the voltage at both ends of the light-emitting structure. Summary of the invention

[0007] In order to solve the deficiencies in the prior art, the present invention provides a nitride HEMT device with a light-emitting structure and a preparation method thereof. The present invention connects the drain of the nitride device to the P-type electrode of the light-emitting structure, so that when the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, and photons are incident into the device body, effectively accelerating the electrons in various deep energy levels in the device body to escape from the trap, thereby effectively suppressing the current collapse effect of the device and improving the stability of the device.

[0008] A nitride HEMT device with a light-emitting structure includes a heterojunction epitaxial wafer, a gate connected to the heterojunction epitaxial wafer, a source electrode, a drain electrode, and a light-emitting structure. The heterojunction epitaxial wafer includes a substrate, a buffer layer formed of group III nitride, a channel layer, and a barrier layer from bottom to top. A two-dimensional electron gas channel is formed between the channel layer and the barrier layer. The heterojunction epitaxial wafer includes an active region in the center; the source electrode and the drain electrode are located at both ends of the active region and form an ohmic contact with the barrier layer. The gate electrode is located on the barrier region and is located in the active region between the source electrode and the drain electrode; the light-emitting structure is located in the active region between the gate electrode and the drain electrode. The light-emitting structure includes the following two types: independent type and shared type:

[0009] (1) The independent light-emitting structure includes a quantum well layer, a P-type nitride layer, a current spreading layer and a P-type electrode which are sequentially distributed from the barrier layer upward.

[0010] (2) In the shared light-emitting structure, the barrier layer is formed by growing at least one group of quantum barrier materials and quantum well materials, and the barrier layer can also serve as a quantum well layer in the light-emitting structure. The light-emitting structure also includes a P-type nitride layer, a current spreading layer, and a P-type electrode distributed in sequence from the barrier layer upward.

[0011] The P-type electrode and the drain in the light-emitting structure are interconnected by metal.

[0012] The present invention connects the drain of the nitride HEMT device to the P-type electrode of the light-emitting structure, so that when the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, and photons are incident into the device body, which effectively accelerates the escape of electrons in various deep energy levels in the device body from traps, thereby effectively suppressing the current collapse effect of the device and improving the stability of the device.

[0013] As a further improvement of the present invention, the quantum well layer in the nitride HEMT device is formed of a quantum well material having a light emitting wavelength range including a visible light band and / or an ultraviolet band.

[0014] and / or

[0015] The materials forming the quantum well layer include quantum well materials and quantum barrier materials; and the band gap of the quantum well materials is smaller than that of the quantum barrier materials. The quantum well materials and the quantum barrier materials are multi-composite materials selected from GaN, InGaN, AlGaN, AlInN, AlInGaN and AlN. Compared with the quantum well materials, the Al component of the quantum barrier materials is increased and / or the In component is reduced.

[0016] and / or

[0017] The quantum well structure in the quantum well layer includes a single quantum well, a double quantum well or a multi-quantum well structure.

[0018] As a further improvement of the present invention, the material of the substrate in the nitride HEMT device includes any one of silicon, sapphire, silicon carbide, gallium nitride, and aluminum nitride.

[0019] and / or

[0020] The materials of the buffer layer, the channel layer and the barrier layer are selected from GaN, AlGaN, InAlN and other group III nitrides, or at least one of the materials containing different doping.

[0021] The material of the P-type nitride layer includes any one or more combinations of P-GaN, P-AlGaN, P-AlInN, P-InGaN and P-AlInGaN.

[0022] and / or

[0023] The current spreading layer is formed of one of indium tin oxide (ITO), graphene, zinc oxide or cadmium tin oxide, or is prepared by using any one or more of nickel, gold, palladium, platinum, titanium, titanium nitride and other conductive metal materials.

[0024] As a further improvement of the present invention, the gate in the nitride HEMT device adopts a metal gate, a metal-insulator-semiconductor gate, a metal oxide semiconductor gate or a P-type nitride gate.

[0025] and / or

[0026] The source, drain, gate and P-type electrode are made of any one or more of nickel, gold, palladium, platinum, titanium, titanium nitride, ITO and other conductive metal materials.

[0027] As a further improvement of the present invention, when the nitride HEMT device adopts an independent light-emitting structure, the light-emitting structure is a separated island structure along the gate width direction of the nitride HEMT device, so as to reduce the depletion effect of the light-emitting structure on the corresponding two-dimensional electron gas below.

[0028] The present invention also includes a method for preparing a nitride HEMT device with a light-emitting structure, which is used to prepare a device with an independent light-emitting structure in the aforementioned nitride HEMT device, and the preparation method includes the following steps:

[0029] (1) Select the required substrate material and polish and clean it.

[0030] (2) A buffer layer, a channel layer and a barrier layer are grown in sequence on the substrate according to the preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer.

[0031] (3) An active area is formed in a designated area of ​​the heterojunction epitaxial wafer by dry etching or ion implantation.

[0032] (4) Determine the position of the light-emitting structure on the barrier layer, and use the selective epitaxial growth technology to sequentially grow a quantum well layer and a P-type nitride layer on the barrier layer according to the preset functional layer material, sequence and thickness.

[0033] (5) Determine the source and drain regions on the barrier layer, deposit specified source metal and drain metal in the specified regions, and then anneal to form the source and drain.

[0034] (6) Determine the position of the current spreading layer on the P-type nitride layer, grow the current spreading layer metal on the P-type nitride layer according to the preset current spreading layer material and thickness, and form the current spreading layer after annealing.

[0035] (7) Determine the position of the P-type electrode on the current spreading layer, grow the P-type electrode metal on the current spreading layer according to the preset material and thickness of the P-type electrode, and then anneal to form the P-type electrode.

[0036] (8) Determine the position of the gate on the barrier layer, deposit the gate metal on the barrier layer according to the preset gate material and thickness, and then anneal to obtain the gate.

[0037] (9) Depositing metal between the P-type electrode and the drain region to form a conductive layer, thereby achieving metal interconnection between the P-type electrode and the drain, and obtaining the desired nitride HEMT device.

[0038] The present invention also includes a method for preparing a nitride HEMT device with a light-emitting structure, which is used to prepare a device with a common light-emitting structure in the aforementioned nitride HEMT device, and the preparation method includes the following steps:

[0039] (1) Select the required substrate material and polish and clean it.

[0040] (2) A buffer layer, a channel layer and a barrier layer are grown in sequence on the substrate according to the preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer.

[0041] The barrier layer is formed by at least one group of quantum barrier materials and quantum well materials.

[0042] (3) An active area is formed in a designated area of ​​the heterojunction epitaxial wafer by dry etching or ion implantation.

[0043] (4) Determine the position of the light-emitting structure on the barrier layer, and sequentially grow a P-type nitride layer on the barrier layer according to the preset functional layer material, sequence and thickness through the selective epitaxial growth technology.

[0044] (5) Determine the source and drain regions on the barrier layer, deposit specified source metal and drain metal in the specified regions, and then anneal to form the source and drain.

[0045] (6) Determine the position of the current spreading layer on the P-type nitride layer, grow the current spreading layer metal on the P-type nitride layer according to the preset current spreading layer material and thickness, and form the current spreading layer after annealing.

[0046] (7) Determine the position of the P-type electrode on the current spreading layer, grow the P-type electrode metal on the current spreading layer according to the preset material and thickness of the P-type electrode, and then anneal to form the P-type electrode.

[0047] (8) Determine the position of the gate on the barrier layer, deposit the gate metal on the barrier layer according to the preset gate material and thickness, and then anneal to obtain the gate.

[0048] (9) Depositing metal between the P-type electrode and the drain region to form a conductive layer, thereby achieving metal interconnection between the P-type electrode and the drain, and obtaining the desired nitride HEMT device.

[0049] The present invention also includes a method for preparing a nitride HEMT device having a P-type nitride gate and a light-emitting structure, which is used to prepare a device using a P-type nitride gate in the aforementioned nitride HEMT device, and the preparation method includes the following steps:

[0050] (1) Select the required substrate material and polish and clean it.

[0051] (2) A buffer layer, a channel layer and a barrier layer are grown in sequence on the substrate according to the preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer.

[0052] (3) An active area is formed in a designated area of ​​the heterojunction epitaxial wafer by dry etching or ion implantation.

[0053] (4) Determine the position of the light-emitting structure on the barrier layer, and grow a quantum well layer on the barrier layer according to the preset material and thickness.

[0054] (5) Determine the position of the gate on the barrier layer, and thin the barrier layer at this location to a preset thickness by dry etching.

[0055] (6) Determine the position of the gate and the P-type nitride layer on the quantum well layer, and simultaneously grow the P-type nitride layer according to the preset material and thickness.

[0056] (7) Determine the source and drain regions on the barrier layer, deposit specified source metal and drain metal in the specified regions, and then anneal to form the source and drain.

[0057] (8) Determine the position of the current spreading layer on the P-type nitride layer, grow the current spreading layer metal on the P-type nitride layer according to the preset current spreading layer material and thickness, and form the current spreading layer after annealing.

[0058] (9) Determine the position of the P-type electrode on the current spreading layer, grow the P-type electrode metal on the current spreading layer according to the preset material and thickness of the P-type electrode, and then anneal to form the P-type electrode.

[0059] (10) Determine the position of the gate metal, deposit the gate metal on the barrier layer according to the preset gate metal material and thickness, and then anneal to obtain the gate.

[0060] (11) Depositing metal between the P-type electrode and the drain region to form a conductive layer, thereby achieving metal interconnection between the P-type electrode and the drain, and obtaining the desired nitride HEMT device.

[0061] The present invention also includes a nitride bidirectionally conductive power switch tube with a light-emitting structure, which includes a heterojunction epitaxial wafer, a gate 1, a gate 2, a source electrode, and a drain electrode connected to the heterojunction epitaxial wafer. The heterojunction epitaxial wafer includes a substrate, a buffer layer formed by a group III nitride, a channel layer, and a barrier layer from bottom to top. A two-dimensional electron gas channel is formed between the channel layer and the barrier layer. The heterojunction epitaxial wafer includes an active region in the center; the source electrode and the drain electrode are located at both ends of the active region and form an ohmic contact with the barrier layer. The gate 1 and the gate 2 are located on the barrier region and in the active region between the source electrode and the drain electrode. The gate 1 is close to the source electrode side, and the gate 2 is close to the drain electrode side. Among them, a light-emitting structure is integrated at one or more places between the source electrode and the gate electrode, between the gate 1 and the gate 2, and between the gate 2 and the drain electrode. The light-emitting structure adopts an independent or shared light-emitting structure in the nitride HEMT device with a light-emitting structure as described above; the P-type electrode of the light-emitting structure is interconnected with the drain electrode through metal.

[0062] The technical solution provided by the present invention has the following beneficial effects:

[0063] The present invention designs a nitride HEMT device with a light-emitting structure. The solution uses a selective epitaxial growth technology to prepare a nitride HEMT device with a light-emitting structure, and connects the drain in the HEMT device to the P-type electrode of the light-emitting structure, so that when the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, and photons are incident into the device body, which effectively accelerates the electrons in various deep energy levels in the device body to escape from traps, thereby effectively suppressing the current collapse effect of the device and improving the stability of the device.

[0064] Compared with the existing self-luminous HEMT devices, the scheme of the present invention has made all-round improvements in the structure, spatial layout and materials of each functional unit in the device, which can not only ensure that the photons generated by the light-emitting structure can reach the depth of the heterojunction epitaxial wafer more efficiently, but also avoid the influence of the heterojunction epitaxial wafer and the light-emitting structure on each other's basic functions to the greatest extent. In addition, the present invention also provides typical processes for preparing several HEMT devices in the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] Figure 1 It is a schematic cross-sectional structure diagram of a nitride HEMT device with a metal gate and an independent light-emitting structure provided in Embodiment 1 of the present invention.

[0066] Figure 2 This is a spatial distribution diagram of different structures relative to the active area in the nitride HEMT device provided by the present invention.

[0067] Figure 3It is a schematic cross-sectional structure diagram of a nitride HEMT device with a metal gate and a shared light-emitting structure provided in Embodiment 1 of the present invention.

[0068] Figure 4 It is a schematic cross-sectional structure diagram of a nitride HEMT device with a P-type nitride gate and an independent light-emitting structure provided in Embodiment 2 of the present invention.

[0069] Figure 5 It is a schematic cross-sectional structure diagram of a nitride HEMT device with a P-type nitride gate and a shared light-emitting structure provided in Embodiment 2 of the present invention.

[0070] Figure 6 Schematic diagram of the principle of accelerating electrons to escape from traps in a nitride HEMT device with a P-type nitride gate and a common light-emitting structure.

[0071] Figure 7-Figure 12 A schematic diagram of the process structure of the preparation process of a nitride HEMT device with a metal gate and an independent light-emitting structure provided in Example 3 of the present invention.

[0072] Figure 13-Figure 20 A schematic diagram of the process structure of a nitride HEMT device having a P-type nitride gate and an independent light-emitting structure provided in Example 5 of the present invention.

[0073] Fig.21 This is a schematic cross-sectional structure diagram of a nitride bidirectionally conductive power switch tube with a light-emitting structure provided in Example 6 of the present invention.

[0074] The markings in the figure are:

[0075] 1. Substrate; 2. Buffer layer; 3. Channel layer; 4. Barrier layer; 6. Source; 7. Drain; 8. Gate; 41. First functional layer; 42. Second functional layer; 43. Third functional layer; 51. Quantum well layer; 52. P-type nitride layer; 53. Current spreading layer; 54. P-type electrode; 81. Gate one; 82. Gate two. DETAILED DESCRIPTION

[0076] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0077] Example 1

[0078] This embodiment provides a nitride HEMT device with a light-emitting structure, and the gate of the nitride HEMT device in this solution can be a metal gate, a metal-insulator-semiconductor gate, a metal oxide semiconductor gate or a P-type nitride gate. This embodiment mainly introduces a HEMT device with a metal gate.

[0079] In particular, in the scheme of the HEMT device with a metal gate, this embodiment further provides two different types of light-emitting structures, which are referred to as an independent light-emitting structure and a shared light-emitting structure in this embodiment.

[0080] Specifically, Figure 1 As shown, the nitride HEMT device with a metal gate and an independent light-emitting structure provided in this embodiment includes, from bottom to top, a substrate 1, a buffer layer 2, a channel layer 3, a barrier layer 4, and a gate 8, a source 6, and a drain 7 connected to a heterojunction epitaxial wafer; in addition, the nitride HEMT device provided in this embodiment also includes a light-emitting structure. Among them, the buffer layer 2, the channel layer 3, and the barrier layer 4 are composed of nitride, and a two-dimensional electron gas channel is formed between the channel layer 3 and the barrier layer 4.

[0081] In this embodiment, the substrate 1 can be made of various substrate 1 materials of conventional semiconductor devices, such as silicon, sapphire, silicon carbide, gallium nitride, aluminum nitride, etc. The III-nitride materials that can be used as the buffer layer 2, the channel layer 3 and the barrier layer 4 include GaN, AlGaN, InAlN, etc. In the heterojunction epitaxial wafer, the buffer layer 2, the channel layer 3 and the barrier layer 4 can be formed by three materials of different types, or by at least one III-nitride material doped with different components or with different doping amounts of the same component. Generally speaking, after different materials are selected for each functional layer, the thickness of the functional layer also needs to be appropriately adjusted to ensure the final device performance.

[0082] For example, in a typical scheme of the present embodiment, a GaN material doped with carbon impurities can be selected to form a nitride buffer layer 2, and the thickness of the buffer layer 2 is 2-6 μm. The nitride channel layer 3 uses undoped GaN material, and the thickness of the channel layer 3 is 280-320 nm. In particular, in the scheme of the present embodiment, the barrier layer 4 preferably uses AlGaN material, and the thickness of the barrier layer 4 is not less than 10 nm. For example. In the typical scheme of the present embodiment, the thickness of the barrier layer 4 is 10-80 nm, wherein the concentration of the doped Al component is 10%-35%. In the present embodiment, the thickness of the barrier layer 4 formed by AlGaN is thick enough, which can minimize the influence of the light-emitting structure on the corresponding two-dimensional electron gas channel below, and ensure the basic performance of the final HEMT device.

[0083] like Figure 2 As shown, the center of the heterojunction epitaxial wafer includes an active area; the active area and other surrounding areas are electrically isolated. Among them, the source 6 and the drain 7 are located at the two ends of the active area and form an ohmic contact with the barrier layer 4. The gate 8 is located on the barrier layer 4 and is located in the active area between the source 6 and the drain 7. Among them, the active area can be constructed by dry etching or ion implantation. The light-emitting structure is located in the active area between the gate 8 and the drain 7. In this embodiment, the light-emitting structure includes a quantum well layer 51, a P-type nitride layer 52, a current expansion layer 53 and a P-type electrode 54 distributed in sequence from the barrier layer 4 to the top. Among them, the P-type electrode 54 in the light-emitting structure is interconnected with the drain 7 by metal.

[0084] In the light emitting structure of this embodiment, the quantum well layer 51 is a special functional layer for emitting light. In order to ensure the final light excitation effect, the quantum well layer 51 in this embodiment is preferably formed of a quantum well material whose emitting wavelength range includes the visible light band and / or the ultraviolet band.

[0085] Specifically, the materials forming the quantum well layer 51 include quantum well materials and quantum barrier materials. In this embodiment, the band gap of the quantum well material is smaller than that of the quantum barrier material; wherein the quantum well material and the quantum barrier material are selected from multi-component composite materials such as GaN, InGaN, AlGaN, AlInN, AlInGaN and AlN; and compared with the quantum well material, the Al component of the quantum barrier material is increased and / or the In component is reduced. The technicians can select any one or more combinations thereof as needed.

[0086] Depending on the selected materials, the quantum well structure in the quantum well layer 51 may include a single quantum well, a double quantum well or a multiple quantum well structure. A quantum well structure is a structure formed by sandwiching a narrow and extremely thin material layer with a wide band gap with a material layer. In a quantum well structure, the potential of the material layer with a narrow band gap is lower than that of the surrounding (material layer with a wide band gap), thus forming a potential well (quantum well). The structure of overlapping multi-layer quantum wells is called a multiple quantum well. Typical quantum well structures include GaN / InGaN / AlGaN, GaN / InGaN / GaN / AlGaN, GaN / InGaN / AlN / AlGaN and AlN / InGaN / AlN / AlGaN, etc.

[0087] The material of the P-type nitride layer 52 includes any one or more combinations of P-GaN, P-AlGaN, P-AlInN, P-InGaN and P-AlInGaN. In actual products, the P-type nitride layer 52 is usually doped with different components, and the P-type nitride layer 52 can be further divided into a multilayer structure as needed. Different components, different dopants or different doping concentrations can be selected for different depths of the P-type nitride layer 52. The current spreading layer 53 is formed of one of indium tin oxide (ITO), graphene, zinc oxide or cadmium tin oxide, or is prepared by any one or more of nickel, gold, palladium, platinum, titanium, titanium nitride and other conductive metal materials.

[0088] For example, in a typical solution provided in this embodiment, the P-type nitride layer 52 is divided into two layers, the two layers have different magnesium doping concentrations and thicknesses, and the doping concentrations are both within 10 18 ~10 21 / cm 3 The thickness of the lower P-type nitride layer 52 is 1-50nm, the thickness of the upper P-type nitride layer 52 is 5-300nm, and the magnesium doping concentration of the upper layer is higher than that of the lower layer. The current spreading layer 53 is also a two-layer structure. From bottom to top, the metals of each layer are selected as Ni and Au respectively; the corresponding thicknesses are 50nm and 150nm respectively.

[0089] The electrodes in the heterojunction epitaxial wafer and the light emitting structure in this embodiment include a gate 8, a source 6, a drain 7 and a P-type electrode 54. The electrode materials are all formed of conductive materials. In addition, the drain 7 in the heterojunction epitaxial wafer and the P-type electrode 54 in the light emitting structure are also formed by conductive materials. The gate 8 in this embodiment can be a metal gate 8, a metal-insulator-semiconductor system (MIS) gate 8, a metal oxide semiconductor (MOS) gate 8 or a P-type nitride gate 8.

[0090] Specifically, the source 6, drain 7, gate 8 and P-type electrode 54 in this embodiment, and even the conductive layer connecting the drain 7 and the P-type electrode 54 can be made of any one or more of nickel, gold, palladium, platinum, titanium, titanium nitride, ITO and other conductive metal materials.

[0091] In actual products, in order to maintain a good interface effect between functional layers, under the premise of ensuring the anti-oxidation and corrosion resistance of the electrode materials, the source 6, drain 7, gate 8 and P-type electrode 54 can be formed by multiple materials in a multi-layer composite manner. For example, in a typical scheme of this embodiment, the source 6 and drain 7 are multi-layer structures. In order from bottom to top, the metals of each layer are selected from Ti, Al, Ni, and Au, respectively, and the corresponding thicknesses are 20nm, 130nm, 50nm, and 150nm, respectively. The P-type electrode 54 is a multi-layer structure. In order from bottom to top, the metals of each layer are selected from Ni and Au, respectively; the corresponding thicknesses are 5nm and 6nm, respectively. The metals of the gate 8 are selected from Pd and Au, and the deposition thicknesses are 50nm and 50nm, respectively. The metal of the conductive layer between the P-type electrode 54 and the drain 7 is a multi-layer structure. In order from bottom to top, the metals of each layer are selected from Ni and Au, respectively; the corresponding thicknesses are 50nm and 400nm, respectively.

[0092] An insertion layer may also be provided between the nitride channel layer 3 / buffer layer 2 and the nitride barrier layer 4. The constituent material of the insertion layer is selected from any one or a combination of two or more of AlN, AlInN, and AlInGaN. In addition, the nitride-based device provided in this embodiment is a nitride-based device without a passivation layer and / or a field plate, or the nitride-based device is a nitride-based device including a passivation layer and / or a field plate structure.

[0093] The structure of the nitride HEMT device with a metal gate and a shared light emitting structure provided in this embodiment is as follows: Figure 3 As shown, Figure 1 Compared with the nitride HEMT device with an independent light-emitting structure provided in the invention, the shared light-emitting structure is actually to directly replace the barrier layer 4 with Figure 1 The same structure as the quantum well layer 51, that is, the barrier layer 4 is directly composed of quantum barrier material and quantum well material, and then Figure 1 The quantum well layer 51 in the light emitting structure is removed, so that the light emitting structure only includes the P-type nitride layer 52, the current spreading layer 53 and the P-type electrode 54. In this structure, the portion of the barrier layer 4 located below the P-type nitride layer 52 serves as both a part of the barrier layer 4 and the quantum well layer 51 in the light emitting structure.

[0094] Specifically, in the nitride HEMT device with a metal gate and a shared light emitting structure provided in this embodiment, as Figure 3 As shown, the barrier layer 4 includes a first functional layer 41, a second functional layer 42, and a third functional layer 43 from the top; wherein the first functional layer 41 and the third functional layer 43 are made of quantum barrier material, and the second functional layer 42 in the middle is made of quantum well material. In the solution of this embodiment, the quantum barrier material can be Al x Ga1-x N, where 0.05≤x≤0.85. The quantum well materials can be GaN, InGaN, and Al y Ga 1-y N, where 0<y<x.

[0095] The advantage of the nitride HEMT device with a shared light-emitting structure provided in this embodiment is that the structure of the device is simplified, thereby reducing the process difficulty of the product and improving the yield rate.

[0096] In addition, in the nitride HEMT device provided in this embodiment, the independent light-emitting structure can be further patterned. For example, the independent light-emitting structure is separated into an island structure along the gate width (WD) direction of the nitride HEMT device to reduce the depletion effect of the light-emitting structure on the corresponding two-dimensional electron gas below.

[0097] Example 2

[0098] This embodiment provides a nitride HEMT device with a light-emitting structure. Based on the solution of Embodiment 1, this embodiment further provides a nitride HEMT device with a P-type nitride gate.

[0099] In particular, in the scheme of the HEMT device with a P-type nitride gate, this embodiment further provides two different types of light-emitting structures, which are referred to as an independent light-emitting structure and a shared light-emitting structure in this embodiment.

[0100] Specifically, Figure 4 As shown, the nitride HEMT device with a P-type nitride gate and an independent light-emitting structure provided in this embodiment mainly improves the barrier region of the gate 8, and minimizes the influence of the light-emitting structure on the corresponding two-dimensional electron gas below by adjusting the thickness of the barrier layer. At the same time, in order to ensure the gate control capability, the barrier layer below the gate is appropriately thinned. In detail, as Figure 4 As shown, in Example 1 provided Figure 1 On the basis of the scheme, the region corresponding to the gate 8 is locally thinned in the barrier layer 4, and a P-type nitride layer 52 is added between the gate 8 and the barrier layer 4.

[0101] The structure of the nitride HEMT device with a P-type nitride gate and a shared light-emitting structure provided in this embodiment is as follows: Figure 5 As shown, in Example 1 provided Figure 3 On the basis of the solution, a P-type nitride layer 52 is added below the gate 8.

[0102] In this embodiment, the Figure 5In the nitride HEMT device shown in FIG. 1 , when the nitride device is in the on state, as shown in FIG. Figure 6 As shown, the light-emitting structure on the barrier layer 4 can also emit light synchronously. At this time, part of the generated photons are incident downward into the device body, accelerating the electrons in various deep energy levels in the heterojunction epitaxial wafer to escape from the trap, thereby effectively suppressing the current collapse effect of the device and reducing the power loss of the device.

[0103] Compared with depletion-mode HEMT devices with metal gates, HEMT devices with P-type nitride gates are enhancement-mode (also known as normally-off) devices in terms of operation type. This type of HEMT device has the advantages of high safety, simplified circuit design, and better circuit topology design, making it more attractive in industry applications.

[0104] Example 3

[0105] This embodiment further provides a method for preparing a nitride HEMT device with a light-emitting structure, which is used to prepare the nitride HEMT device with a metal gate and an independent light-emitting structure in Embodiment 1. Specifically, Figure 7-Figure 12 As shown, the preparation method of such a HEMT device includes the following steps:

[0106] (1) Select the required substrate 1 material and polish and clean it.

[0107] In the HEMT device, the substrate 1 material can be selected from silicon, sapphire, silicon carbide, gallium nitride, aluminum nitride, etc. In this embodiment, silicon is preferably used as the substrate 1.

[0108] (2) growing a buffer layer 2, a channel layer 3, a barrier layer 4, and an optional insertion layer between the channel layer 3 and the barrier layer 4 in sequence on a substrate 1 according to the preset functional layer materials, sequence and thickness; obtaining Figure 7 The heterojunction epiwafer shown.

[0109] In this embodiment, the technicians use GaN material as the nitride buffer layer 2 by MOCVD (metal organic chemical vapor deposition), with a thickness of 2-6 μm, in which carbon impurities are doped. GaN material is used as the nitride channel layer 3, with a thickness of 280-320 nm. AlGaN material is used as the nitride barrier layer 4, with a thickness of 10-80 nm, in which the Al component doped is usually 10%-35%.

[0110] It should be noted that in semiconductor manufacturing technology, when the functional layer is made of different materials, different technologies can be used to form the corresponding epitaxial layer. Even for the same material, different methods can be used to grow it in different processes. This embodiment mainly introduces the main process used in the present invention. There are a large number of optional alternative processes in the prior art, which will not be listed one by one in this article. The formation methods of the functional layers mentioned in this step and other subsequent steps of the present invention are not intended to limit the scheme of the present invention.

[0111] (3) In combination with photolithography technology, an active area is formed in a designated area in the center of the heterojunction epitaxial wafer by dry etching or ion implantation.

[0112] For example, dry etching generally includes methods such as ICP (inductively coupled plasma etching). For example, in the ICP etching method, the ICP power is set to 100W, the pressure is 5mTorr, and Cl2, BCl3 and Ar gases are introduced. Ion implantation generally uses fluorine ion, nitrogen ion and other ion implantation methods.

[0113] (4) By combining photolithography technology, the position of the light-emitting structure on the barrier layer 4 is determined, and the following layers are sequentially grown on the barrier layer 4 according to the preset functional layer materials, sequence and thickness. Figure 8 The quantum well layer 51 and the P-type nitride layer 52 are shown.

[0114] In this embodiment, a quantum well layer 51 and a P-type nitride layer 52 are sequentially epitaxially grown on the nitride barrier layer 4 by MOCVD. x Ga 1-x N, 0<x≤0.5; the thickness of the quantum well layer 51 is 0.3-8nm. The P-type nitride layer 52 is divided into two layers, the thickness of the first P-type nitride layer 52 is 1-50nm, and the thickness of the second P-type nitride layer 52 is 5-300nm. In addition, although the magnesium doping concentration range of the two layers in this embodiment is 10 18 ~10 21 / cm 3 , but the magnesium doping concentration in the P-type nitride layer 52 at the bottom is relatively low.

[0115] (5) Combined with photolithography technology, the source 6 and drain 7 regions on the barrier layer 4 are determined, and the specified source 6 metal and drain 7 metal are deposited in the specified regions, and then annealed at high temperature to form the following Fig. 9 A source 6 and a drain 7 are shown.

[0116] Specifically, in this embodiment, Ti / Al / Ni / Au are sequentially deposited as the source 6 metal and the drain 7 metal by electron beam evaporation technology, and the thickness of the four layers of metal materials are 20nm / 130nm / 50nm / 150nm respectively; after the deposition is completed, annealing is performed at a temperature of 890°C for 30s in a nitrogen atmosphere.

[0117] (6) Combining photolithography technology, determine the position of the light-emitting structure on the barrier layer 4, grow the current spreading layer 53 metal on the P-type nitride layer 52 according to the preset current spreading layer 53 material and thickness; and anneal to form Fig.10 The current spreading layer 53 is shown.

[0118] In this embodiment, Ni / Au are sequentially deposited as the metal of the current spreading layer 53 by electron beam evaporation technology. The thickness of the two metal layers is 50nm / 150nm respectively. After the deposition is completed, annealing is performed in an air atmosphere at a temperature of 570° C. for 5 minutes.

[0119] (7) Combining photolithography technology, the position of the P-type electrode is determined, and according to the preset material and thickness of the P-type electrode 54, a layer such as Fig.11 The P-type electrode 54 is shown.

[0120] In this embodiment, Ni / Au are sequentially deposited by electron beam evaporation technology as the metal of the P-type electrode 54. The thickness of the two metal layers is 5nm / 6nm respectively.

[0121] (8) Combining photolithography technology, the position of the gate 8 is determined, and the gate 8 is deposited on the barrier layer 4 according to the preset material and thickness of the gate 8, such as Fig.12 As shown, a gate 8 is obtained.

[0122] In this embodiment, Pd and Au are deposited as the gate 8 metal by electron beam evaporation technology, and the deposition thicknesses are 50 nm and 50 nm respectively.

[0123] (9) Determine the area between the P-type electrode 54 and the drain 7, deposit metal to form a conductive layer, and then realize the metal interconnection between the P-type electrode 54 and the drain 7, and obtain the desired nitride HEMT device.

[0124] In this embodiment, the PAD region is determined by photolithography, and then the PAD metal is deposited to form a conductive layer. The conductive layer is obtained by sequentially depositing Ni / Au using electron beam evaporation technology, and the thickness of the two metal layers is 50nm / 400nm respectively.

[0125] Example 4

[0126] This embodiment further provides a method for preparing a nitride HEMT device with a light-emitting structure, which is used to prepare the nitride HEMT device with a metal gate and a shared light-emitting structure in Embodiment 1. Compared with the method for preparing a nitride HEMT device with an independent light-emitting structure in Embodiment 3, the method for preparing a nitride HEMT device with a shared light-emitting structure is different only in that:

[0127] In step (2), the barrier layer 4 is formed by at least one group of quantum barrier materials and quantum well materials, so that the local barrier layer 4 below the light-emitting structure can also serve as the quantum well layer 51. In addition, in step (4), only the P-type nitride layer 52 needs to be grown, and no additional quantum well layer 51 needs to be grown.

[0128] In detail, the method for preparing a nitride HEMT device having a metal gate and a shared light-emitting structure provided in this embodiment includes the following steps:

[0129] (1) Select the required substrate 1 material and polish and clean it.

[0130] (2) A buffer layer 2, a channel layer 3 and a barrier layer 4 are sequentially grown on a substrate 1 according to preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer.

[0131] The barrier layer 4 is formed by at least one group of quantum barrier materials and quantum well materials.

[0132] (3) An active area is formed in a designated area in the center of the heterojunction epitaxial wafer by dry etching or ion implantation.

[0133] (4) Determine the position of the light-emitting structure on the barrier layer 4 , and grow a P-type nitride layer 52 on the barrier layer 4 according to the preset functional layer material and thickness.

[0134] (5) Determine the source 6 and drain 7 regions on the barrier layer 4, deposit specified source 6 metal and drain 7 metal in the specified regions, and then anneal to form the source 6 and drain 7.

[0135] (6) Determine the position of the light-emitting structure on the barrier layer 4, grow the current spreading layer 53 metal on the P-type nitride layer 52 according to the preset current spreading layer 53 material and thickness; and form the current spreading layer 53 after annealing.

[0136] (7) Determine the position of the light-emitting structure on the barrier layer 4 , and grow a P-type electrode 54 on the current spreading layer 53 according to the preset material and thickness of the P-type electrode 54 .

[0137] (8) Determine the position of the gate 8, and deposit the gate 8 metal on the barrier layer 4 according to the preset material and thickness of the gate 8 to obtain the gate 8.

[0138] (9) Determine the regions of the P-type electrode 54 and the drain electrode 7, deposit metal to form a conductive layer, and then realize metal interconnection between the P-type electrode 54 and the drain electrode 7, and obtain the desired nitride HEMT device.

[0139] Example 5

[0140] This embodiment further provides a method for preparing a nitride HEMT device with a light-emitting structure, which is used to prepare a nitride HEMT device with a P-type nitride gate and an independent light-emitting structure as in Embodiment 2. Figure 13-Figure 20 As shown, the preparation method of the device is as follows:

[0141] (1) Select the required substrate 1 material and polish and clean it.

[0142] In the HEMT device, the substrate 1 material can be selected from silicon, sapphire, silicon carbide, gallium nitride, aluminum nitride, etc. In this embodiment, silicon is preferably used as the substrate 1.

[0143] (2) growing a buffer layer 2, a channel layer 3, a barrier layer 4, and an optional insertion layer between the channel layer 3 and the barrier layer 4 in sequence on a substrate 1 according to the preset functional layer materials, sequence and thickness; obtaining Fig.13 The heterojunction epiwafer shown.

[0144] In this embodiment, the technician uses GaN material as the nitride buffer layer 2 by MOCVD, with a thickness of 2-6 μm, in which carbon impurities are doped. GaN material is used as the nitride channel layer 3, with a thickness of 280-320 nm. AlGaN material is used as the nitride barrier layer 4, with a thickness of 10-80 nm, in which the Al component doped is usually 10%-35%.

[0145] (3) An active area is formed in a designated area in the center of the heterojunction epitaxial wafer by dry etching or ion implantation.

[0146] (4) Determine the position of the light-emitting structure on the barrier layer 4, according to the preset material and thickness, such as Fig.14 As shown, a quantum well layer 51 is grown on the barrier layer 4 .

[0147] In this embodiment, a quantum well layer 51 is epitaxially grown on the nitride barrier layer 4 by MOCVD, wherein the material of the quantum well layer 51 is In x Ga 1-x N, 0<x≤0.5; the thickness of the quantum well layer 51 is 0.3-8nm.

[0148] (5) Fig.15As shown, the position of the gate electrode 8 reserved on the barrier layer 4 is determined, and the barrier layer 4 at this position is thinned according to a preset thickness by dry etching.

[0149] In this embodiment, through the barrier layer 4 of the ICP partial thickness, the ICP power is set to 100W, the pressure is 5mTorr, and Cl2, BCl3 and Ar gases are introduced. The remaining barrier layer 4 has a thickness of 5-40nm.

[0150] (6) Determine the position of the gate 8 and the light-emitting structure, according to the preset material and thickness, such as Fig.16 As shown, P-type nitride layers 52 are grown at two locations respectively.

[0151] In this embodiment, the P-type nitride layer 52 is divided into two layers, the thickness of the first P-type nitride layer 52 is 1-50nm, and the thickness of the second P-type nitride layer 52 is 5-300nm. In addition, in this embodiment, although the magnesium doping concentration range of the two layers is 10 18 ~10 21 / cm 3 , but the magnesium doping concentration in the P-type nitride layer 52 at the bottom is relatively low.

[0152] (7) Determine the source 6 and drain 7 regions on the barrier layer 4, deposit the specified source metal and drain metal in the specified regions, and then anneal to form Fig.17 A source 6 and a drain 7 are shown.

[0153] In this embodiment, Ti, Al, Ni, and Au are sequentially deposited as source metal and drain metal by electron beam evaporation technology, and the thickness of the four layers of metal materials are 20nm, 130nm, 50nm, and 150nm, respectively; after the deposition is completed, annealing is performed at 890°C for 30s in a nitrogen atmosphere.

[0154] (8) Determine the position of the current spreading layer 53, and grow the current spreading layer 53 metal on the P-type nitride layer 52 by electron beam evaporation technology according to the preset material and thickness of the current spreading layer 53; and anneal to form the following Fig.18 The current spreading layer 53 is shown.

[0155] In this embodiment, Ni and Au are sequentially deposited as the metal of the current spreading layer 53 by electron beam evaporation technology. The thickness of the two metal layers are 50nm and 150nm respectively. After the deposition is completed, annealing is performed in an air atmosphere at a temperature of 570°C for 5 minutes.

[0156] (9) Determine the position of the gate 8, and deposit the gate 8 metal on the barrier layer 4 according to the preset gate 8 material and thickness, to obtain Fig.19 The gate 8 is shown.

[0157] In this embodiment, Pd and Au are sequentially deposited as the gate 8 metal by electron beam evaporation technology. The thickness of the two metal layers are 50 nm and 50 nm respectively. After the deposition is completed, annealing is performed at 570° C. for 10 minutes in a nitrogen atmosphere.

[0158] (10) Determine the position of the P-type electrode 54, and grow a layer such as the following on the current spreading layer 53 according to the preset material and thickness of the P-type electrode 54. Fig. 20 The P-type electrode 54 is shown.

[0159] In this embodiment, Ni and Au are sequentially deposited by electron beam evaporation technology as the metal of the P-type electrode 54. The thickness of the two metal layers are 5nm and 6nm respectively.

[0160] (11) Determine the regions of the P-type electrode 54 and the drain electrode 7, deposit metal to form a conductive layer, thereby realizing metal interconnection between the P-type electrode 54 and the drain electrode 7, and obtaining the desired nitride HEMT device.

[0161] In this embodiment, the PAD region is determined by photolithography, and then the PAD metal is deposited to form a conductive layer. The conductive layer is obtained by sequentially depositing Ni and Au using electron beam evaporation technology, and the thickness of the two metal layers are 50nm and 400nm respectively.

[0162] Example 6

[0163] This embodiment provides a nitride bidirectionally conductive power switch tube with a light-emitting structure. Specifically, Fig.21 As shown, in Example 1 provided Figure 3 Based on the scheme, the nitride bidirectional conductive power switch tube with a light-emitting structure provided in this embodiment has two gates: gate one 81 and gate two 82. The gate one 81 is close to the source 6 side, and the gate two 82 is close to the drain 7 side. The light-emitting structure is integrated at one or more places between the gate two 82 and the gate one 81 (region two) and between the gate two 82 and the drain 7 (region three), and the P-type electrode 54 of the light-emitting structure is interconnected with the drain 7 through metal. Similarly, in another case of a nitride bidirectionally conductive power switch tube, the source 6 can be equivalent to the "drain", and the drain 7 can be equivalent to the "source". A light-emitting structure is integrated at one or more places between the gate 2 82 and the gate 1 81 (region 2) and between the gate 2 82 and the "drain" (region 1). The P-type electrode 54 of the light-emitting structure and the "drain" are interconnected by metal to achieve conduction in another direction. When the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, and photons are incident on the device body, effectively accelerating the escape of electrons from traps in various deep energy levels in the device body, thereby effectively suppressing the current collapse effect of the device and improving the stability of the device.

[0164] It should be noted that: Fig.21 The light emitting structure in the power switch tube shown adopts the shared structure in Embodiment 1. In other embodiments, the independent light emitting structure in Embodiment 1 may also be adopted as the light emitting structure in the power switch tube of this embodiment.

[0165] Similarly, the gate of the nitride bidirectionally conducting power switch tube may be a metal gate, a metal-insulator-semiconductor gate, a metal oxide semiconductor gate, or a P-type nitride gate, in addition to a metal gate.

[0166] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0167] The above embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A nitride HEMT device with a light-emitting structure, comprising a heterojunction epitaxial wafer, a gate electrode, a source electrode, a drain electrode connected to the heterojunction epitaxial wafer, and a light-emitting structure; characterized in that: The heterojunction epitaxial wafer includes, from bottom to top, a substrate, a buffer layer formed of group III nitride, a channel layer and a barrier layer; a two-dimensional electron gas channel is formed between the channel layer and the barrier layer; the center of the heterojunction epitaxial wafer includes an active area; the source and the drain are located at both ends of the active area and form an ohmic contact with the barrier layer; the gate is located on the barrier area and in the active area between the source and the drain; the light-emitting structure is located in the active area between the gate and the drain; the light-emitting structure includes two types: independent type and shared type: (1) The independent type light emitting structure comprises a quantum well layer, a P-type nitride layer, a current spreading layer and a P-type electrode which are sequentially distributed from the barrier layer upward; (2) In the shared light-emitting structure, the barrier layer is formed by growing at least one group of quantum barrier materials and quantum well materials, and can also serve as a quantum well layer in the light-emitting structure; the light-emitting structure also includes a P-type nitride layer, a current spreading layer and a P-type electrode distributed in sequence from the barrier layer upward; The P-type electrode and the drain electrode in the light emitting structure are interconnected by metal.

2. The nitride HEMT device with a light emitting structure according to claim 1, characterized in that: It connects the drain of the nitride device to the P-type electrode of the light-emitting structure so that when the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, and photons are incident on the device body, effectively accelerating the escape of electrons in various deep energy levels in the device body from traps, thereby effectively suppressing the current collapse effect of the device and improving the stability of the device.

3. The nitride HEMT device with a light emitting structure according to claim 1, characterized in that: The quantum well layer is formed of a quantum well material whose luminescent wavelength range includes a visible light band and / or an ultraviolet band; and / or The material forming the quantum well layer includes quantum well material and quantum barrier material; and the band gap of the quantum well material is smaller than that of the quantum barrier material; The quantum well material and the quantum barrier material are multi-component composite materials selected from GaN, InGaN, AlGaN, AlInN, AlInGaN and AlN; and compared with the quantum well material, the Al component of the quantum barrier material is increased and / or the In component is reduced; and / or The quantum well structure in the quantum well layer includes a single quantum well, a double quantum well or a multi-quantum well structure.

4. The nitride HEMT device with a light emitting structure according to claim 1, characterized in that: The material of the substrate includes any one of silicon, sapphire, silicon carbide, gallium nitride, and aluminum nitride; and / or The materials of the buffer layer, the channel layer and the barrier layer are selected from GaN, AlGaN, InAlN and other group III nitrides, or at least one of the materials containing different doping. The material of the P-type nitride layer includes any one or more combinations of P-GaN, P-AlGaN, P-AlInN, P-InGaN and P-AlInGaN; and / or The current spreading layer is formed of one of indium tin oxide, graphene, zinc oxide or cadmium tin oxide, or is prepared by using any one or more of nickel, gold, palladium, platinum, titanium, titanium nitride and other conductive metal materials.

5. The nitride HEMT device with a light emitting structure according to claim 1, characterized in that: The gate is a metal gate, a metal-insulator-semiconductor gate, a metal oxide semiconductor gate or a P-type nitride gate; and / or The source electrode, drain electrode, gate electrode and P-type electrode are made of any one or more of nickel, gold, palladium, platinum, titanium, titanium nitride, ITO and other conductive metal materials.

6. The nitride HEMT device with a light emitting structure according to claim 1, characterized in that: The independent light-emitting structure is a separated island structure along the gate width direction of the nitride HEMT device, so as to reduce the depletion effect of the light-emitting structure on the corresponding two-dimensional electron gas below.

7. A method for preparing a nitride HEMT device having a light-emitting structure, characterized in that: It is used to prepare a device having an independent light-emitting structure in the nitride HEMT device as claimed in claim 1, and the preparation method comprises the following steps: (1) Select the required substrate material and polish and clean it; (2) growing a buffer layer, a channel layer and a barrier layer in sequence on the substrate according to the preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer; (3) forming an active area in a designated area of ​​the heterojunction epitaxial wafer by dry etching or ion implantation; (4) determining the position of the light-emitting structure on the barrier layer, and sequentially growing a quantum well layer and a P-type nitride layer on the barrier layer according to the preset functional layer material, sequence and thickness through the selective epitaxial growth technology; (5) determining the source and drain regions on the barrier layer, depositing specified source metal and drain metal in the specified regions, and then annealing to form the source and drain; (6) determining the position of the current spreading layer on the P-type nitride layer, growing a current spreading layer metal on the P-type nitride layer according to a preset current spreading layer material and thickness, and forming the current spreading layer after annealing; (7) determining the position of the P-type electrode on the current spreading layer, growing a P-type electrode metal on the current spreading layer according to a preset material and thickness of the P-type electrode, and then annealing to form the P-type electrode; (8) determining the position of the gate on the barrier layer, depositing the gate metal on the barrier layer according to the preset gate material and thickness, and then annealing to obtain the gate; (9) Depositing metal between the P-type electrode and the drain region to form a conductive layer, thereby achieving metal interconnection between the P-type electrode and the drain, and obtaining the desired nitride HEMT device.

8. A method for preparing a nitride HEMT device having a light-emitting structure, characterized in that: It is used to prepare a device having a shared light-emitting structure in the nitride HEMT device as claimed in claim 1, and the preparation method comprises the following steps: (1) Select the required substrate material and polish and clean it; (2) growing a buffer layer, a channel layer and a barrier layer in sequence on the substrate according to the preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer; Wherein, the barrier layer is formed by at least one group of quantum barrier materials and quantum well materials; (3) forming an active area in a designated area of ​​the heterojunction epitaxial wafer by dry etching or ion implantation; (4) determining the position of the light-emitting structure on the barrier layer, and sequentially growing a P-type nitride layer on the barrier layer according to the preset functional layer material, sequence and thickness by means of a selective epitaxial growth technique; (5) determining the source and drain regions on the barrier layer, depositing specified source metal and drain metal in the specified regions, and then annealing to form the source and drain; (6) determining the position of the current spreading layer on the P-type nitride layer, growing a current spreading layer metal on the P-type nitride layer according to a preset current spreading layer material and thickness, and forming the current spreading layer after annealing; (7) determining the position of the P-type electrode on the current spreading layer, growing a P-type electrode metal on the current spreading layer according to a preset material and thickness of the P-type electrode, and then annealing to form the P-type electrode; (8) determining the position of the gate on the barrier layer, depositing the gate metal on the barrier layer according to the preset gate material and thickness, and then annealing to obtain the gate; (9) Depositing metal between the P-type electrode and the drain region to form a conductive layer, thereby achieving metal interconnection between the P-type electrode and the drain, and obtaining the desired nitride HEMT device.

9. A method for preparing a nitride HEMT device having a P-type nitride gate and a light-emitting structure, characterized in that: It is used to prepare a device using a P-type nitride gate in a nitride HEMT device as claimed in claim 5, and the preparation method comprises the following steps: (1) Select the required substrate material and polish and clean it; (2) growing a buffer layer, a channel layer and a barrier layer in sequence on the substrate according to the preset functional layer materials, sequence and thickness to obtain a heterojunction epitaxial wafer; (3) forming an active area in a designated area of ​​the heterojunction epitaxial wafer by dry etching or ion implantation; (4) determining the position of the light-emitting structure on the barrier layer, and growing a quantum well layer on the barrier layer according to a preset material and thickness; (5) determining the position of the gate on the barrier layer, and thinning the barrier layer at this position according to a preset thickness by dry etching; (6) Determine the position of the gate and the P-type nitride layer on the quantum well layer, and simultaneously grow the P-type nitride layer according to the preset material and thickness; (7) determining the source and drain regions on the barrier layer, depositing specified source metal and drain metal in the specified regions, and then annealing to form the source and drain; (8) determining the position of the current spreading layer on the P-type nitride layer, growing a current spreading layer metal on the P-type nitride layer according to a preset current spreading layer material and thickness, and forming the current spreading layer after annealing; (9) determining the position of the P-type electrode on the current spreading layer, growing a P-type electrode metal on the current spreading layer according to a preset material and thickness of the P-type electrode, and then annealing to form the P-type electrode; (10) determining the position of the gate metal, depositing the gate metal on the barrier layer according to the preset gate metal material and thickness, and then annealing to obtain the gate; (11) Depositing metal between the P-type electrode and the drain region to form a conductive layer, thereby achieving metal interconnection between the P-type electrode and the drain, and obtaining the desired nitride HEMT device.

10. A nitride bidirectionally conductive power switch tube with a light-emitting structure, comprising a heterojunction epitaxial wafer, a gate 1, a gate 2, a source electrode, and a drain electrode connected to the heterojunction epitaxial wafer; characterized in that: The heterojunction epitaxial wafer includes, from bottom to top, a substrate, a buffer layer formed of group III nitride, a channel layer and a barrier layer; a two-dimensional electron gas channel is formed between the channel layer and the barrier layer; the center of the heterojunction epitaxial wafer includes an active region; the source and the drain are located at two ends of the active region and form an ohmic contact with the barrier layer; the gate 1 and the gate 2 are located on the barrier region and in the active region between the source and the drain; the gate 1 is close to the source side, and the gate 2 is close to the drain side; wherein a light-emitting structure is integrated at one or more locations between the source and the gate, between the gate 1 and the gate 2, and between the gate 2 and the drain; the light-emitting structure adopts an independent or shared light-emitting structure in the nitride HEMT device with a light-emitting structure as claimed in claim 1; the P-type electrode of the light-emitting structure is interconnected with the drain by metal.

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