Texturing additive, texturing liquid and use method of texturing liquid

Abstract

The invention provides a texturing additive, a texturing solution and a use method thereof. The texturing additive is prepared from the following components in percentage by mass: 0.01 to 0.5 weight percent of nucleating agent, 0.5 to 4.0 weight percent of defoaming agent, 0.1 to 4.0 weight percent of suede stabilizer, 0.5 to 3.0 weight percent of suede regulator, 0.5 to 5.0 weight percent of surfactant, 0.1 to 5.0 weight percent of activating agent and the balance of deionized water, wherein the nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic basic group. The used nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic alkaline functional group, and compared with the existing texturing liquid, the texturing liquid adopting the texturing additive disclosed by the invention has the advantages that the surface of a monocrystalline silicon wafer can be etched to form a pyramid-shaped textured structure without additionally adding inorganic alkali; therefore, the problem that etching is violent and uncontrollable due to the use of strong base is solved.

Description

Technical Field

[0001] The invention relates to the field of photovoltaic technology, in particular to a texturing additive, a texturing liquid and a use method thereof. Background Art

[0002] Texturing is the primary key process in the production of monocrystalline silicon high-efficiency batteries. This process forms a pyramid-like structure on the surface of monocrystalline silicon wafers. Such a "pyramid" structure requires the use of a texturing catalyst to anisotropically etch the planes in the (100) and (111) directions of the monocrystalline silicon wafer in a specific alkaline solution. This "pyramid" velvet structure can reduce the reflectivity of the silicon wafer surface to sunlight and increase the absorption of light, thereby improving the efficiency of converting solar energy into electrical energy and obtaining a higher photoelectric conversion efficiency. Alkaline etching solutions are generally used for texturing of monocrystalline silicon wafers, and most of them are etched using inorganic alkaline solutions. Among them, the difference in etching speed of the texturing catalyst on different crystal faces of monocrystalline silicon is the determining factor for the formation of the pyramid structure on the surface.

[0003] The existing texturing processes all directly use strong alkali to etch the surface of silicon wafers to form a velvet structure. The etching reaction in this process is violent and difficult to control, which will destroy the regularity of the silicon wafer surface and even the basic structure of the silicon wafer. Therefore, this type of strong alkali texturing agent usually needs to be used in conjunction with a texturing catalyst. During use, the texturing catalyst and the inorganic base need to be mixed in a certain proportion to form a texturing liquid. The strong etching effect of the strong alkali on silicon is weakened through the slow release and adsorption of the texturing additive. In addition, the high consumption of inorganic alkali in the texturing production process will also generate extremely high production costs. At the same time, the use of inorganic alkali not only has the possibility of causing harm to the human body during use, but also causes environmental pollution and increased processing costs, which is contrary to green industrial production.

[0004] Based on this, it is necessary to provide a texturing method for the textured surface structure of a single crystal silicon wafer with high stability to address the problem of severe and uncontrollable etching caused by the use of strong alkali in the existing single crystal texturing process. Summary of the invention

[0005] The object of the present invention is to provide a texturing solution without using inorganic strong alkali, so as to solve the problem of severe and uncontrollable etching caused by using strong alkali in the texturing process.

[0006] To achieve the above object, the present invention provides the following technical solutions: In the first aspect, the present invention provides a texturing additive, which includes the following components in mass fractions: 0.01-0.5wt% of a nucleating agent, 0.5-4.0wt% of a defoaming agent, 0.1-4.0wt% of a velvet stabilizer, 0.5-3.0wt% of a velvet regulator, 0.5-5.0wt% of a surfactant, 0.1-5.0wt% of an activator, and the remainder deionized water; wherein the nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic basic group.

[0007] Preferably, the water-soluble dendritic polymer macromolecule containing organic basic groups is one or more selected from polyamide-amine, hydroxyl-terminated polyamide-amine, pentaerythritol-polyamide-amine, lysine-polyamide-amine, polypropyleneimine, polylysine, and polyethyleneimine.

[0008] Preferably, the defoaming agent is one or both selected from carboxymethyl guar gum and sodium carboxymethyl cellulose.

[0009] Preferably, the velvet stabilizer is a mixture of one or more selected from indoleacetic acid, sodium 1-naphthylacetate, and sodium dihydroxynaphthalenesulfonate.

[0010] Preferably, the suede conditioning agent is a small molecule naphthalene compound.

[0011] Furthermore, the small molecule naphthalene compound is at least one selected from sodium alkylnaphthalene sulfonate and sodium β-naphthalene sulfonate.

[0012] Preferably, the surfactant is an amino acid surfactant.

[0013] Furthermore, the amino acid surfactant is at least one selected from sodium myristoyl glutamate, sodium lauroyl glutamate, and sodium cocoyl glycinate.

[0014] Preferably, the activator is one selected from 1-butyl-3-methylimidazolium acetate, 1-butyl-3-methylimidazolium p-toluenesulfonate, and 1-butyl-3-methylimidazolium methanesulfonate, or a mixture of several thereof.

[0015] In a second aspect, the present invention provides a texturing liquid, which comprises the texturing additive as described above and deionized water, wherein the texturing additive:deionized water=1:150~1:500.

[0016] In the third aspect, the present invention further discloses a texturing method, which comprises preparing a texturing liquid with the texturing additive as described above, or using the texturing liquid as described above, and then using it to texturing the surface of a silicon wafer, wherein the texturing step is: immersing the cleaned silicon wafer in the texturing liquid and performing surface texturing at 80 to 85°C for 350 to 450 seconds.

[0017] Compared with the prior art, the beneficial effects of the present invention are: the scheme of the present invention adopts a water-soluble dendritic polymer macromolecule with specific organic alkaline groups, and the polymer integrates nucleation and alkaline properties, which can be used to texturize the surface of the silicon wafer during the texturizing process, thereby promoting the etching process. The organic alkalinity ensures the smoothness of the etching reaction, avoids the destruction of the regularity of the silicon wafer surface, and extends the service life of the silicon wafer after texturizing.

[0018] Specifically, the solution of the present invention has the following advantages: (1) The present invention provides a texturing method using a texturing liquid. This method is different from the traditional texturing method for single crystal silicon wafers. It only needs to use the texturing liquid of the present invention without adding inorganic alkali as an etchant. It can achieve anisotropic etching of the surface of the silicon wafer at a certain temperature to obtain a conventional pyramid texturing surface, which is used to enhance the silicon wafer's absorption of light and thereby improve the silicon wafer's photoelectric conversion efficiency.

[0019] (2) The present invention uses dendritic polymer macromolecules and modified molecules thereof as nucleating agents, which are all water-soluble high molecular polymers. The ends of the molecular structure of the nucleating agent contain a large number of amino groups. The nitrogen atoms of these amino groups have unshared electron pairs, which attract protons (i.e., hydrogen ions) in water to covalently bind to form -NH 3+ ionizes excess hydroxide (OH - ), making the texturing solution highly alkaline; at the same time, these ionized large amounts of hydroxide ions etch the surface of the silicon wafer, and the etching reaction speed of different silicon crystal surfaces is different. <111> Slowest, <110> as well as <100> The surface will be etched away, and finally the <111> The nucleating agent has a pyramid structure with a main surface; the molecular structure of the nucleating agent contains a large number of hydroxyl, amino or carboxyl groups, which makes it more evenly dissolved in water. At the same time, these strong polar group structures can be adsorbed on the surface of the silicon wafer, forming strong hydrogen bonds with the Si-H bond of silicon, adsorbed on the surface of the silicon wafer, and also serve as nucleation points for the formation of the velvet surface; on the other hand, the long chain in the molecular structure of the nucleating agent extends outward from the surface of the silicon wafer to play a steric hindrance effect, which also has a better dispersion effect.

[0020] (3) The amount of dendritic polymer macromolecules added as nucleating agents also has an important influence on the formation of the pyramid velvet structure. When the content of nucleating agent molecules is less than 0.01%, the velvet cannot be produced on the silicon wafer surface, while when it is higher than 1%, the velvet surface is too small, which is not conducive to improving the light trapping effect on the silicon wafer surface. (4) The velvet stabilizer used in the present invention can promote the detachment of silicate from the surface of the silicon wafer, ensure the saturation of the velvet pyramid formation, and maintain the stability of the pyramid shape.

[0021] (5) The amino acid surfactant used in the present invention can significantly reduce the surface tension of water, wet the silicon surface, and quickly separate the hydrogen bubbles generated by the reaction.

[0022] (6) The activator and nucleating agent used in the present invention complement each other and can attract silicon electrons. They can activate silicon-silicon bonds during the texturing process and enhance the reducibility of silicon, so that hydroxide can quickly attack the dangling bonds of silicon atoms even at very low concentrations, thereby completing the etching of the silicon wafer and speeding up the reaction.

[0023] Compared with the existing texturing additives, the texturing additive provided by the present invention can achieve etching of silicon to form a velvet pyramid structure without using additional inorganic strong alkali in the silicon wafer texturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a microscope image of the textured pyramid structure obtained by textured single crystal silicon wafer in Example 1 of the present invention; Figure 2 A microscope image of a textured pyramid structure obtained by texture processing a single crystal silicon wafer in Example 2 of the present invention; Figure 3 This is a microscope image of the textured pyramid structure obtained by textured single crystal silicon wafer in Example 3 of the present invention; Figure 4 A microscope image of a textured pyramid structure obtained by texture processing a single crystal silicon wafer in Example 4 of the present invention; Figure 5 This is a microscope image of the textured pyramid structure obtained by textured single crystal silicon wafer in Comparative Example 1 of the present invention; Figure 6 This is a microscope image of the textured pyramid structure obtained by textured single crystal silicon wafer in Comparative Example 2 of the present invention; Figure 7 This is a microscope image of the textured pyramid structure obtained by textured single crystal silicon wafer in Comparative Example 3 of the present invention; Figure 8 This is a microscope image of the textured pyramid structure obtained by textured single crystal silicon wafer in Comparative Example 4 of the present invention. DETAILED DESCRIPTION

[0025] In view of the fact that current silicon wafer texturing additives use a large amount of inorganic alkali in the texturing of high-efficiency batteries, which leads to the problems of unstable texturing etching and environmental pollution, the present invention provides a method for preparing an alkali-free texturing additive liquid for solar cell wafers. The texturing agent of the present invention is used to prepare a texturing liquid for single crystal silicon wafers, and single crystal silicon texturing wafers can be obtained without the additional use of inorganic alkali.

[0026] In an exemplary embodiment, the technical solution of the present invention is as follows: The present invention provides a texturing agent, which comprises the following components in parts by mass: 0.01-0.5 of a nucleating agent, 0.5-4.0 of a defoaming agent, 0.1-4.0 of a suede stabilizer, 0.5-3.0 of a suede regulator, 0.5-5.0 of a surfactant, and 0.1-5.0 of an activator; wherein the nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic alkaline group.

[0027] Furthermore, the present invention provides a texturing additive, wherein the texturing additive comprises the following components in mass fractions: Nucleating agent 0.01-0.5wt%, defoaming agent 0.5-4.0wt%, suede stabilizer 0.1-4.0wt%, suede regulator 0.5-3.0wt%, surfactant 0.5-5.0wt%, activator 0.1-5.0wt%, and the balance of deionized water; Wherein: the nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic alkaline group; the suede conditioning agent is a small molecule naphthalene compound; and the surfactant is an amino acid surfactant.

[0028] The dendritic polymer macromolecules include one or two of polyamide-amine, hydroxyl-terminated polyamide-amine dendrimers, pentaerythritol-polyamide-amine, lysine-polyamide-amine, polypropyleneimine, polylysine, and polyethyleneimine.

[0029] The defoaming agent is selected from one or both of carboxymethyl guar gum and sodium carboxymethyl cellulose.

[0030] The suede conditioning agent is selected from at least one of sodium alkylnaphthalene sulfonate and sodium β-naphthalene sulfonate.

[0031] The velvet stabilizer is selected from one or a mixture of indoleacetic acid, sodium 1-naphthylacetate, sodium dihydroxynaphthalenesulfonate.

[0032] The surfactant is at least one selected from sodium myristoyl glutamate, sodium lauroyl glutamate and sodium cocoyl glycinate.

[0033] The activator is selected from one or a mixture of 1-butyl-3-methylimidazolium acetate, 1-butyl-3-methylimidazolium p-toluenesulfonate, and 1-butyl-3-methylimidazolium methanesulfonate.

[0034] The present invention further provides a texturing liquid, wherein the texturing additive as described above is diluted with deionized water to prepare the texturing liquid, which is then used to texturing the surface of a silicon wafer.

[0035] The texturing process is as follows: immersing the cleaned silicon wafer in the texturing liquid and performing surface texturing at 80-85°C for 350-450 seconds. The texturing liquid can be made into a single crystal silicon wafer texturing etching liquid without mixing with an inorganic alkali liquid.

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end", "the other end" and the like indicating the orientation or positional relationship are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0038] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. Example 1

[0039] Provided is a texturing additive, which comprises the following components in mass fractions: 0.02wt% polyamidoamine, 2wt% sodium carboxymethyl cellulose, 1.0wt% sodium β-naphthalenesulfonate, 0.2wt% indoleacetic acid, 2.0wt% sodium lauroyl glutamate, 1.0wt% 1-butyl-3-methylimidazole acetate and the balance deionized water.

[0040] The texturing additive of the above-mentioned embodiment 1 is stirred and mixed with deionized water in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is: immerse the cleaned silicon wafer in the texturing liquid and texturize it at 85°C for 450 seconds to complete the texturing of the silicon wafer. Example 2

[0041] Provided is a texturing additive, which comprises the following components in mass fractions: 0.015wt% polyamidoamine, 2wt% sodium carboxymethyl cellulose, 1.0wt% sodium β-naphthalenesulfonate, 0.2wt% indoleacetic acid, 2.0wt% sodium lauroyl glutamate, 1.0wt% 1-butyl-3-methylimidazole acetate and the balance deionized water.

[0042] The texturing additive of the above-mentioned Example 2 is stirred and mixed with water in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is: immerse the cleaned silicon wafer in the texturing liquid and texturize it at 85°C for 450 seconds to complete the texturing of the silicon wafer. Example 3

[0043] Provided is a texturing additive, which comprises the following components in mass fractions: Lysine-polyamidoamine 0.02wt%, sodium carboxymethyl cellulose 2.5wt%, sodium β-naphthalenesulfonate 1.0wt%, indoleacetic acid 0.2wt%, sodium cocoyl glycinate 2.0wt%, 1-butyl-3-methylimidazole acetate 1.0wt% and the balance of deionized water.

[0044] The texturing additive of the above-mentioned Example 3 is stirred and mixed with water in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is: immerse the cleaned silicon wafer in the texturing liquid and texturize it at 85°C for 450 seconds to complete the texturing of the silicon wafer. Example 4

[0045] Provided is a texturing additive, which comprises the following components in mass fractions: 0.01 wt% polyethyleneimine, 3 wt% sodium carboxymethyl cellulose, 2.0 wt% sodium alkylnaphthalene sulfonate, 0.2 wt% indoleacetic acid, 2.0 wt% sodium lauroyl glutamate, 1.0 wt% 1-butyl-3-methylimidazole methanesulfonate and the balance deionized water.

[0046] The texturing additive of the above-mentioned Example 4 is stirred and mixed with water in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is: immerse the cleaned silicon wafer in the texturing liquid and texturize it at 85°C for 450 seconds to complete the texturing of the silicon wafer.

[0047] Comparative Example 1 The latest single crystal silicon texturing additive (product model TS57) produced by Changzhou Shichuang Energy Co., Ltd. is mixed and stirred evenly with a 1.5wt% sodium hydroxide solution in a volume ratio of 1:160 to prepare a texturing solution; then the single crystal silicon wafer is cleaned and immersed in the above texturing solution for surface texturing. The texturing temperature is 82°C and the texturing time is 420 seconds, thereby completing the silicon wafer texturing.

[0048] Comparative Example 2 Provided is a texturing additive, which comprises the following components in mass fractions: 2wt% sodium carboxymethyl cellulose, 1.0wt% sodium β-naphthalenesulfonate, 0.2wt% indoleacetic acid, 2.0wt% sodium lauroyl glutamate, 1.0wt% 1-butyl-3-methylimidazole acetate and the balance deionized water.

[0049] The texturing additive liquid of the above-mentioned comparative example 2 is stirred and mixed with water in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is: immerse the cleaned silicon wafer in the texturing liquid and texturize it at 85°C for 450 seconds to complete the texturing of the silicon wafer.

[0050] The difference between Comparative Example 2 and Example 2 is that no nucleating agent is used in the texturing liquid of Comparative Example 2, and the other conditions are the same.

[0051] Comparative Example 3 Provided is a texturing additive, which comprises the following components in mass fractions: Polyamide-amine 0.015wt%, sodium carboxymethyl cellulose 2wt%, sodium β-naphthalenesulfonate 1.0wt%, indoleacetic acid 0.2wt%, sodium lauroyl glutamate 2.0wt%, and the balance deionized water.

[0052] The texturing additive of the above-mentioned comparative example 3 is stirred and mixed with water in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is: immerse the cleaned silicon wafer in the texturing liquid and texturize it at 85°C for 450 seconds to complete the texturing of the silicon wafer.

[0053] The difference between Comparative Example 3 and Example 2 is that no activator is used in the texturing solution of Comparative Example 2, and the other conditions are the same.

[0054] Comparative Example 4 Provided is a texturing additive, which comprises the following components in mass fractions: 2wt% sodium carboxymethyl cellulose, 1.0wt% sodium β-naphthalenesulfonate, 0.2wt% indoleacetic acid, 2.0wt% sodium lauroyl glutamate, 1.0wt% 1-butyl-3-methylimidazole acetate and the balance deionized water.

[0055] The texturing additive of the comparative example 4 is stirred and mixed with a 1.0wt% sodium hydroxide aqueous solution in a volume ratio of 1:200 to form a texturing liquid, and then the texturing liquid is used to texturize the surface of the silicon wafer. The texturing process is as follows: the cleaned silicon wafer is immersed in the texturing liquid and texturized at 85°C for 450 seconds to complete the texturing of the silicon wafer.

[0056] The difference between Comparative Example 4 and Example 2 is that: the texturing additive of Comparative Example 4 does not use a nucleating agent, which is added to a sodium hydroxide solution to form a texturing solution, and the other conditions are the same.

[0057] Note: The silicon wafers used in the texturing process involved in the examples and comparative examples are all single crystal silicon wafers (length × width: 156 cm × 156 cm) that have been pre-cleaned.

[0058] test: A parallel comparison experiment was conducted on the silicon wafers after texturing in the above-mentioned Example 1 and Example 2 as well as Comparative Examples 1 to 4. The silicon wafers after texturing were immersed in deionized water for 180 seconds, taken out and air-dried under a hot air blower, and the appearance was observed. The reflectivity, scanning electron microscopy and ZETA tests of the silicon wafers were also performed. The results are shown in Table 1 below.

[0059] Wherein: the tower base, tower height, number, and specific surface area (the specific surface area refers to the ratio of the surface area of ​​the test area after texturing etching to the plane area of ​​the test area) of the pyramid morphology in the central area of ​​the silicon wafer surface are tested by ZETA INSTRUMENTS instrument; the reflectivity of the silicon wafer is tested by NXT Helios-rc reflectivity tester; the ZETA data and reflectivity of the velvet surface of specific embodiments 1, 2 and comparative examples 1 to 4 are shown in the following Table 1: Table 1 shows the weight loss and reflectivity results of the embodiments and comparative examples after texturing Group Weight loss (g) Reflectivity (%) Tower base (μm) Tower height (μm) Down rate (ten thousand / mm2) Specific surface area Example 1 0.23 10.02 1.614 0.841 22.65 1.246 Example 2 0.22 9.88 1.602 0.902 22.27 1.271 Example 3 0.25 10.15 1.587 0.877 23.18 1.235 Example 4 0.23 9.95 1.590 0.882 23.07 1.227 Comparative Example 1 0.24 10.14 1.640 0.942 21.25 1.233 Comparative Example 2 0.02 34.07 - - - - Comparative Example 3 0.28 14.76 1.750 0.954 19.92 1.255 Comparative Example 4 0.38 25.76 1.838 1.148 16.66 1.296 It can be seen from the test results in Table 1 that the pyramid velvet surface that can be obtained in both Example 1 and Example 2 indicates that the velvet-making liquid of the present invention can etch a pyramid velvet structure on the surface of a silicon wafer without the participation of an inorganic base, which can greatly reduce the reflectivity. At the same time, compared with Comparative Example 1, Examples 1 and 2 can also prepare a velvet surface similar to a commercial velvet-making etching liquid (TS57, Changzhou Shichuang Energy), and the reflectivity is also close. Compared with Example 2, in the absence of a dendritic polymer macromolecular nucleating agent, the reflectivity of Comparative Example 2 is close to the reflectivity of a silicon wafer without velvet, and a complete velvet surface cannot be formed. The velvet surface data cannot meet the detection requirements, indicating that the velvet-making liquid without a nucleating agent cannot etch the silicon wafer. Compared with Example 3, Example 2 has a smaller weight loss of the silicon wafer, and the embodiment has a stronger velvet removal ability. The formed velvet surface is smaller and has more pyramid velvet removal rates (220,000 / mm2). At the same time, through Comparative Example 4, it is found that when no nucleating agent is added but alkali is added to participate in the velvet production, a pyramid structure can be formed together with the alkali, which shows that the activator also plays an important role in the velvet production process. The activator can cooperate with the nucleating agent to promote the formation of a better full velvet surface.

[0060] The matters not described in detail in the present invention are all known technologies to those skilled in the art.

[0061] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified and replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. A texturing additive, characterized in that: The texturing additive comprises the following components by mass fraction: Nucleating agent 0.01-0.5wt%, defoaming agent 0.5-4.0wt%, suede stabilizer 0.1-4.0wt%, suede regulator 0.5-3.0wt%, surfactant 0.5-5.0wt%, activator 0.1-5.0wt%, and the balance of deionized water; The nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic basic group.

2. The texturing additive according to claim 1, characterized in that: The water-soluble dendritic polymer macromolecule containing organic basic groups is one or more selected from polyamide-amine, hydroxyl-terminated polyamide-amine, pentaerythritol-polyamide-amine, lysine-polyamide-amine, polypropyleneimine, polylysine, and polyethyleneimine.

3. The texturing additive according to claim 1, characterized in that: The defoaming agent is one or two selected from carboxymethyl guar gum and sodium carboxymethyl cellulose.

4. The texturing additive according to claim 1, characterized in that: The velvet stabilizer is a mixture of one or more selected from indoleacetic acid, sodium 1-naphthylacetate, and sodium dihydroxynaphthalenesulfonate.

5. The texturing additive according to claim 1, characterized in that: The suede conditioning agent is a small molecule naphthalene compound.

6. The texturing additive according to claim 5, characterized in that: The small molecule naphthalene compound is at least one selected from sodium alkylnaphthalene sulfonate and sodium β-naphthalene sulfonate.

7. The texturing additive according to claim 1, characterized in that: The surfactant is an amino acid surfactant.

8. The texturing additive according to claim 7, characterized in that: The amino acid surfactant is at least one selected from sodium myristoyl glutamate, sodium lauroyl glutamate and sodium cocoyl glycinate.

9. The texturing additive according to claim 1, characterized in that: The activator is one or a mixture of 1-butyl-3-methylimidazolium acetate, 1-butyl-3-methylimidazolium p-toluenesulfonate, and 1-butyl-3-methylimidazolium methanesulfonate.

10. A texturing liquid, characterized in that: The texturing liquid comprises the texturing additive according to any one of claims 1 to 9 and deionized water, wherein the texturing additive: deionized water = 1:150~1:

500.

11. A texturing method, characterized in that: The texturing additive according to any one of claims 1 to 9 is made into a texturing liquid, or the texturing liquid according to claim 10 is used, and then used to texturing the surface of a silicon wafer, wherein the texturing step is: immersing the cleaned silicon wafer in the texturing liquid and performing surface texturing at 80 to 85°C for 350 to 450 seconds.

Images