Crystal defect detection and analysis method and system

Abstract

The invention provides a crystal defect detection and analysis method and system, and belongs to the technical field of crystal detection.The method comprises the steps that 1, crystals are heated and cooled, resistivity under different sintering conditions is obtained, and the concentration of defects is determined; 2, determining the influence of the attraction force and inhibition effect of the defect on the behavior of the carrier, determining the current response after the carrier is injected, and determining the type of the defect; 3, obtaining a light absorption process of the crystal, and determining migration kinetics of the defect according to transition time and relaxation time of photoelectrons; 4, creating a numerical model, predicting the defect behavior of the crystal according to temperature-dependent carrier transport, and obtaining the dynamic process of the defect; and 5, carrying out regression analysis on the concentration, the type, the migration kinetics and the kinetics process of the defect, and extracting characteristic parameters of the defect to realize defect detection analysis of the crystal. The problems that the crystal defect detection cost is high, the detection speed is low, the detection depth is limited, and the material performance is affected are solved.

Description

Technical Field

[0001] The present invention relates to the field of crystal detection technology, and in particular to a crystal defect detection and analysis method and system. Background Art

[0002] With the rapid development of materials science, crystals affect the physical, chemical and mechanical properties of materials, so crystal defect detection is an important technology.

[0003] However, traditional crystal defect detection requires professional technicians to perform operations and data analysis, and the operation is complicated, the detection cost is high, and the detection speed is slow. At the same time, the detection technology is too superficial and the detection depth is limited. It cannot accurately obtain the defects inside the crystal, which affects the performance of the material and cannot be used in the production of semiconductor devices.

[0004] Therefore, the present invention proposes a crystal defect detection and analysis method and system. Summary of the invention

[0005] The present invention provides a crystal defect detection and analysis method and system to solve the problem that traditional crystal defect detection in the prior art requires professional technicians to perform operation and data analysis, and the operation is complicated, the detection cost is high, and the detection speed is slow. At the same time, the detection technology is too superficial and the detection depth is limited. It is impossible to accurately obtain the defects inside the crystal, which affects the performance of the material and cannot be used for the production of semiconductor devices.

[0006] In one aspect, the present invention provides a crystal defect detection and analysis method, comprising: Step 1: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined according to the resistivity; Step 2: Determine that the behavior of carriers is affected by the attraction and inhibition of defects based on the charge injection technique, determine the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determine the type of defect based on the current response and resistance change; Step 3: Obtain the light absorption process of the crystal under different light according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectron, and determine the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Step 4: Create a numerical model and predict the defect behavior of the crystal at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of the defect; Step 5: Perform regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, extract characteristic parameters of the defects, and implement defect detection and analysis of the crystal based on the characteristic parameters.

[0007] According to a crystal defect detection and analysis method provided by the present invention, the resistivity of the crystal under different sintering conditions is obtained by heating and cooling the crystal, and the concentration of the defect is determined according to the resistivity, including: Determine the type of target crystal according to X-ray diffraction, and determine the heating temperature range and cooling temperature range of the crystal according to the type; Heating and cooling the crystal at different temperatures according to the heating temperature range and the cooling temperature range combined with the heating rate and the cooling rate; According to the heating and cooling results, the resistivity of the crystal under different sintering conditions is obtained based on the four-point probe method; determining the movement of electrons based on the resistivity, and determining the conductivity of the crystal based on the movement of the electrons; The electrical conductivity of the crystal is determined according to the electrical conductivity of the crystal in combination with the physical parameters of the crystal, and the concentration of defects is determined according to the electrical conductivity.

[0008] According to a crystal defect detection and analysis method provided by the present invention, the behavior of carriers is determined to be affected by the attraction and inhibition of defects according to the charge injection technology, the current response and resistance change after the carriers are injected are determined according to the attraction and inhibition, and the type of defects is determined according to the current response and resistance change, including: External charges are introduced into the crystal by ion implantation, and the region including the carrier injection region is continuously scanned to obtain a surface potential map of the scanned region; Determining the behavior of carriers in the crystal based on the surface potential map, and determining the influence of the attraction and inhibition of the defects on the carriers based on the behavior; Determine the electrical parameters after carrier injection based on the effects of attraction and inhibition; Determining a current response and a resistance change according to the electrical parameters; Response parameters and resistance change trends are determined according to the current response and the resistance change, and the type of defect is determined according to the response parameters and the resistance change trends.

[0009] According to a crystal defect detection and analysis method provided by the present invention, the light absorption process of the crystal under different light is obtained according to the light absorption spectrum, the transition time and relaxation time of the photoelectron are determined, and the migration dynamics of the defect is determined according to the transition time and relaxation time of the photoelectron, including: Acquire the dark lines of the spectrum of the crystal under light of different wavelengths according to the light absorption spectrum, and determine the energy level transition of the crystal according to the dark lines of the spectrum; Determining the light absorption process of the crystal under different light according to the energy level transition of the crystal; Determining the transition time and relaxation time of the photoelectron according to the light absorption process, and obtaining defect information that causes the carrier lifetime to be shortened according to the transition time and relaxation time of the photoelectron; Migration kinetics of the defect are determined based on the defect information.

[0010] According to a crystal defect detection and analysis method provided by the present invention, a numerical model is created, and the defect behavior of the crystal at different temperatures is predicted based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of the defect, including: Creating a numerical model based on the Monte Carlo method and inputting temperature-dependent carrier transport and defect motion into the numerical model; Obtain the prediction results of the numerical model and determine the defect behavior of the crystal at different temperatures based on the prediction results; The movement and change of the defect in the crystal are determined according to the defect behavior, and the dynamic process of the defect is obtained according to the movement and change.

[0011] According to a crystal defect detection and analysis method provided by the present invention, the concentration, type, migration dynamics and kinetic process of the defect are subjected to regression analysis to extract characteristic parameters of the defect, and the crystal defect detection and analysis is implemented according to the characteristic parameters, including: Performing regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtaining defect property information according to the analysis results, and predicting the failure mode of the identified defects based on the defect property information; Obtain the formation mechanism and propagation path of defects based on the prediction results; The characteristic parameters of the defects are extracted according to the formation mechanism and propagation path of the defects, the corresponding repair strategies are obtained according to the characteristic parameters, and the defect detection and analysis of the crystal is implemented according to the repair strategies.

[0012] According to a crystal defect detection and analysis method provided by the present invention, the concentration, type, migration kinetics and kinetic process of the defect are subjected to regression analysis, defect property information is obtained according to the analysis results, and failure mode prediction is performed on the identified defect based on the defect property information, including: Determine the change parameters of multiple data items according to the concentration, type, migration kinetics and kinetic process of the defects, and construct a change monitoring sequence for each data item based on the change parameters; Obtain the abnormal features of each data item through the monitoring sequence of the change amount of each data item, and perform regression matching analysis on the abnormal features to determine the predicted defect type of each data item; The predicted defect types that appear repeatedly in all data items are regarded as qualitative defects of the crystal; Retrieving the explicit features of the defect description and the implicit features of the defect description of the qualitative defect from the database, and determining the crystal integrity under the qualitative defect according to the explicit features of the defect description and the implicit features of the defect description; Determine defect property information of qualitative defects based on crystal integrity, wherein the defect property information includes: general defect information, serious defect information and major defect information; Based on the defect property information of qualitative defects, the relationship function between the quality degradation and failure evolution of the crystal under the condition of multiple defects coexisting is obtained; Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain analysis results; Determine the correlation coefficient between each identified defect and other identified defects based on the analysis results; The correlation coefficient is used as the parameter value of the function of the relationship between the quality degradation and failure evolution of the crystal under the condition of coexistence of multiple defects, and the function calculation is performed to obtain the function calculation result; The failure mode of each identified defect is determined according to the function calculation result, wherein the failure mode includes: double defect covering failure and multiple defect hiding failure.

[0013] On the other hand, the present invention provides a crystal defect detection and analysis system, comprising: Acquisition module: obtains the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determines the concentration of defects based on the resistivity; The first determination module: determines, based on the charge injection technology, that the behavior of carriers is affected by the attraction and inhibition of defects, determines the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determines the type and concentration of defects based on the current response and resistance change; The second determination module: obtains the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determines the transition time and relaxation time of the photoelectron, and determines the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Creation module: Create numerical models and predict the defect behavior of crystals at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of defects; Extraction module: Perform regression analysis on the concentration, type, migration dynamics and kinetic process of defects, extract characteristic parameters of defects, and implement defect detection and analysis of crystals based on the characteristic parameters.

[0014] Compared with the prior art, the present invention has the following beneficial effects: By determining the concentration, type, migration dynamics and kinetic process of defects and performing regression analysis to determine the characteristic parameters of the defects, the detection speed can be improved. At the same time, the detection depth of the crystal is deeper and does not stop at the surface. The defects inside the crystal can be accurately obtained, the performance of the material can be improved, and it can be accurately used in the production of semiconductor devices to improve the production efficiency of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0016] Figure 1 It is a schematic diagram of the flow of a crystal defect detection and analysis method provided by an embodiment of the present invention; Figure 2 It is a structural schematic diagram of a crystal defect detection and analysis system provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] Embodiment 1: An embodiment of the present invention provides a crystal defect detection and analysis method, such as Figure 1 As shown, the method mainly includes the following steps: Step 1: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined according to the resistivity; Step 2: Determine that the behavior of carriers is affected by the attraction and inhibition of defects based on the charge injection technique, determine the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determine the type of defect based on the current response and resistance change; Step 3: Obtain the light absorption process of the crystal under different light according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectron, and determine the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Step 4: Create a numerical model and predict the defect behavior of the crystal at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of the defect; Step 5: Perform regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, extract characteristic parameters of the defects, and implement defect detection and analysis of the crystal based on the characteristic parameters.

[0019] In this embodiment, sintering is to mix a plurality of metal powders or alloy powders with a small amount of binder and then sinter them at a high temperature to obtain the desired shape and properties.

[0020] In this embodiment, resistivity is a physical quantity that describes the degree to which a material opposes the flow of electric current.

[0021] In this embodiment, defect concentration refers to the ratio between the number of defects in a material or crystal and a unit volume or area. The higher the defect concentration, the worse the quality of the material.

[0022] In this embodiment, the charge injection technology is a semiconductor process that can inject positive or negative charges into semiconductor materials to improve their electrical properties.

[0023] In this embodiment, carriers are charges that can move freely in the semiconductor, including positive charges (holes) and negative charges (free electrons).

[0024] In this embodiment, after the carriers are injected, the resistance value of the material will change, resulting in a change in the current. After the carriers are injected, the conductivity of the material will increase, which will cause the resistance value to decrease. Therefore, after the charge injection, the relationship between the current and the voltage should be inversely proportional.

[0025] In this embodiment, the defect types in the crystal include: Intrinsic defects: are inherent properties of the material itself, such as dislocations and grain boundaries.

[0026] Extrinsic defects: defects formed during crystal growth or processing, such as mechanical damage and chemical corrosion.

[0027] Structural defects: defects caused by the asymmetry of the internal structure of the crystal, such as twin bonds, holes, etc.

[0028] In this embodiment, the time required for an atom to transfer from one energy level to another is called the transition time.

[0029] In this embodiment, relaxation time is the time required for atoms to return to their equilibrium positions under external action.

[0030] In this embodiment, the defect migration dynamics studies the transmission and diffusion process of defects in the material. In this process, the defects will continuously move and evolve with the movement of dislocations, and will also undergo various forms of changes due to the influence of the surrounding environment.

[0031] In this embodiment, the characteristic parameters of the defect include: concentration, diffusion coefficient, migration energy, and change slope.

[0032] The beneficial effects of the above technical solution are: by determining the concentration, type, migration dynamics and kinetic process of defects and performing regression analysis to determine the characteristic parameters of the defects, the detection speed can be improved. At the same time, the detection depth of the crystal is deep and does not stop at the surface. The defects inside the crystal can be accurately obtained, the performance of the material can be improved, and it can be accurately used in the production of semiconductor devices to improve the production efficiency of the device.

[0033] Embodiment 2: Based on Example 1, the embodiment of the present invention obtains the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determines the concentration of defects according to the resistivity, including: Determine the type of target crystal according to X-ray diffraction, and determine the heating temperature range and cooling temperature range of the crystal according to the type; Heating and cooling the crystal at different temperatures according to the heating temperature range and the cooling temperature range combined with the heating rate and the cooling rate; According to the heating and cooling results, the resistivity of the crystal under different sintering conditions is obtained based on the four-point probe method; determining the movement of electrons based on the resistivity, and determining the conductivity of the crystal based on the movement of the electrons; The electrical conductivity of the crystal is determined according to the electrical conductivity of the crystal in combination with the physical parameters of the crystal, and the concentration of defects is determined according to the electrical conductivity.

[0034] In this embodiment, X-ray diffraction is a method for detecting and analyzing the structure and properties of a substance. By studying the bending, scattering and absorption phenomena of atoms or ions under X-ray irradiation, information about the crystal can be obtained.

[0035] In this embodiment, the crystal is a solid material composed of orderly arranged atoms, ions or molecules, and the particles inside the crystal are arranged regularly, such as: single crystal, polycrystalline, amorphous.

[0036] In this embodiment, the temperature range of the crystal during the heating process will affect its structure and performance. Different types of crystals have different heating temperature ranges, for example: Single crystals (such as quartz, silicon, etc.): solid at room temperature, and when heated to about 700 degrees Celsius, their structure changes to form high-melting-point covalent bonds.

[0037] Polycrystalline (such as silicon carbide, silicon nitride, etc.): They have high thermal and chemical stability and are generally heated in the range of 600-1100 degrees Celsius to obtain a better crystalline structure.

[0038] In this embodiment, the heating rate of the crystal refers to the rate of change of the temperature of the crystal during the heating process.

[0039] In this embodiment, the four-point probe method is a method for measuring the electric field strength inside a semiconductor material. The internal electric field strength of the semiconductor material is calculated by measuring the potential difference at four test points, thereby obtaining more accurate material parameters.

[0040] In this embodiment, sintering is to mix a plurality of metal powders or alloy powders with a small amount of binder and then sinter them at a high temperature to obtain the desired shape and properties.

[0041] In this embodiment, resistivity is a physical quantity that describes the degree to which a material opposes the flow of electric current.

[0042] In this embodiment, the electrical conductivity of a crystal refers to the ability of electrons in the crystal to move freely and participate in the transmission of electric current.

[0043] In this embodiment, the physical parameters of the crystal include: density, Young's modulus, and thermal expansion coefficient.

[0044] In this embodiment, the conductivity of a crystal refers to the ability of the crystal to conduct electric current.

[0045] The beneficial effects of the above technical solution are: determining the heating temperature range and the cooling temperature range according to the type of crystal, obtaining the resistivity of the crystal under different sintering conditions, thereby determining the conductivity of the crystal, obtaining the concentration of defects, and being able to determine the distribution of defects in the crystal, which can better understand the internal structure of the material, evaluate the quality of the material, and improve the reliability and performance of the crystal material.

[0046] Embodiment 3: Based on Example 2, the embodiment of the present invention determines that the behavior of carriers is affected by the attraction and inhibition of defects according to the charge injection technology, determines the current response and resistance change after the carriers are injected according to the attraction and inhibition, and determines the type of defects according to the current response and resistance change, including: External charges are introduced into the crystal by ion implantation, and the region including the carrier injection region is continuously scanned to obtain a surface potential map of the scanned region; Determining the behavior of carriers in the crystal based on the surface potential map, and determining the influence of the attraction and inhibition of the defects on the carriers based on the behavior; Determine the electrical parameters after carrier injection based on the effects of attraction and inhibition; Determining a current response and a resistance change according to the electrical parameters; Response parameters and resistance change trends are determined according to the current response and the resistance change, and the type of defect is determined according to the response parameters and the resistance change trends.

[0047] In this embodiment, ion implantation is a doping technology in semiconductor technology, which is mainly used to improve the conductivity and electrical properties of semiconductor materials. It can accurately dope specific types of external charges into semiconductor materials to achieve a predetermined electrical effect.

[0048] In this embodiment, carriers are charges that can move freely in the semiconductor, including positive charges (holes) and negative charges (free electrons).

[0049] In this embodiment, the surface potential map refers to an image obtained by measuring and plotting the electrochemical potential of a specific surface.

[0050] In this embodiment, the electrical parameters after the carriers are injected include: resistivity, conductivity, and mobility.

[0051] In this embodiment, the defect types in the crystal include: Intrinsic defects: are inherent properties of the material itself, such as dislocations and grain boundaries.

[0052] Extrinsic defects: defects formed during crystal growth or processing, such as mechanical damage and chemical corrosion.

[0053] Structural defects: defects caused by the asymmetry of the internal structure of the crystal, such as twin bonds, holes, etc.

[0054] The beneficial effects of the above technical solution are: by scanning the area containing carrier injection, obtaining the surface potential map of the scanned area, determining the behavior of the carriers in the crystal, thereby determining the electrical parameters after the carrier injection, and obtaining the type of defect, the specific cause of the problem can be quickly determined, so as to carry out targeted repairs and prevention, which helps to shorten the repair time, reduce maintenance costs, and improve overall work efficiency.

[0055] Embodiment 4: Based on Example 3, the embodiment of the present invention obtains the light absorption process of the crystal under different lights according to the light absorption spectrum, determines the transition time and relaxation time of the photoelectron, and determines the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron, including: Acquire the dark lines of the spectrum of the crystal under light of different wavelengths according to the light absorption spectrum, and determine the energy level transition of the crystal according to the dark lines of the spectrum; Determining the light absorption process of the crystal under different light according to the energy level transition of the crystal; Determining the transition time and relaxation time of the photoelectron according to the light absorption process, and obtaining defect information that causes the carrier lifetime to be shortened according to the transition time and relaxation time of the photoelectron; Migration kinetics of the defect are determined based on the defect information.

[0056] In this embodiment, light absorption spectroscopy is a method of measuring the absorption characteristics of a substance to light of different wavelengths. When light irradiates a substance, absorption occurs, that is, part of the light is absorbed and converted into heat energy.

[0057] In this embodiment, the dark spectral lines refer to the absorption of certain specific wavelengths of light in spectral analysis, causing the spectral lines near these wavelengths to darken. These absorption lines are generated due to the absorption and scattering of light by atoms and molecules of the substance, resulting in the absorption of light.

[0058] In this embodiment, the energy level transition of the crystal means that when an electron is injected into the crystal, it enters an atomic orbital, which contains multiple different energy levels. When the electron transitions from one energy level to another, an energy level transition process occurs. This process will result in energy transfer and cause the electron to transition from a low energy level to a high energy level, or vice versa.

[0059] In this embodiment, light absorption means that when light is irradiated onto a substance, the atoms or molecules in the substance absorb photons of certain specific wavelengths. These photons interact with the electrons of the atoms and elevate them from a lower energy state to a higher energy state. This process causes the temperature of the substance to rise and release photons of the same wavelength.

[0060] In this embodiment, the time required for an atom to transfer from one energy level to another is called the transition time.

[0061] In this embodiment, relaxation time is the time required for atoms to return to their equilibrium positions under external action.

[0062] In this embodiment, defect information that causes a shortened carrier lifetime includes: radiation damage, hot carrier scattering, and chemical defects.

[0063] In this embodiment, the defect migration dynamics studies the transmission and diffusion process of defects in the material. In this process, the defects will continuously move and evolve with the movement of dislocations, and will also undergo various forms of changes due to the influence of the surrounding environment.

[0064] The beneficial effect of the above technical solution is: obtaining defect information that causes shortened carrier lifetime based on the transition time and relaxation time of photoelectrons, thereby determining the migration dynamics of defects and better understanding the movement laws of defects in materials, which helps to optimize material performance and improve material reliability.

[0065] Embodiment 5: Based on Example 4, the embodiment of the present invention creates a numerical model, and predicts the defect behavior of the crystal at different temperatures based on temperature-dependent carrier transport and defect motion, and obtains the dynamic process of the defect, including: Creating a numerical model based on the Monte Carlo method and inputting temperature-dependent carrier transport and defect motion into the numerical model; Obtain the prediction results of the numerical model and determine the defect behavior of the crystal at different temperatures based on the prediction results; The movement and change of the defect in the crystal are determined according to the defect behavior, and the dynamic process of the defect is obtained according to the movement and change.

[0066] In this embodiment, the Monte Carlo method is a numerical calculation method for solving a numerical model by simulating actual problems through random sampling. It uses a large number of independent and identically distributed random variables as samples, analyzes these samples, and thus obtains a probability distribution of real parameters.

[0067] In this embodiment, the numerical model is a computer program that uses mathematical formulas and algorithms to simulate and predict natural and social phenomena, usually based on certain assumptions and constraints of the actual system, and uses numerical calculation methods to simulate and analyze the dynamic behavior of the system.

[0068] In this embodiment, temperature-dependent carrier transport refers to the movement and transmission process of electrons and holes in semiconductor materials, which changes due to the influence of temperature. As the temperature increases, the average energy of the carriers increases, resulting in more carriers obtaining sufficient energy to migrate, which increases the charge density and accelerates the transfer of charges.

[0069] In this embodiment, defect motion refers to a phenomenon in which various atoms or ions existing in a crystal structure vibrate, rotate, or move irregularly.

[0070] In this embodiment, defect behaviors include: generation, movement, merging, and disappearance of defects.

[0071] In this embodiment, the dynamic process of the defect refers to the forces and moments to which the defect is subjected when it moves irregularly, as well as their movement laws.

[0072] The beneficial effects of the above technical solution are: determining the defect behavior of the crystal at different temperatures based on the prediction results of the numerical model, thereby determining the movement and change of the defect in the crystal, predicting the performance of the material under different conditions, determining the stability of the defect, and improving the utilization efficiency of the material.

[0073] Embodiment 6: Based on Example 5, the embodiment of the present invention performs regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, extracts characteristic parameters of the defects, and implements defect detection and analysis of the crystal according to the characteristic parameters, including: Performing regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtaining defect property information according to the analysis results, and predicting the failure mode of the identified defects based on the defect property information; Obtain the formation mechanism and propagation path of defects based on the prediction results; The characteristic parameters of the defects are extracted according to the formation mechanism and propagation path of the defects, the corresponding repair strategies are obtained according to the characteristic parameters, and the defect detection and analysis of the crystal is implemented according to the repair strategies.

[0074] In this embodiment, the plurality of defect measurement data includes: defect type, defect concentration, defect migration dynamics, and defect dynamics process.

[0075] In this embodiment, regression analysis is a data analysis method used to determine the quantitative relationship of mutual dependence between two or more variables. Regression analysis can be used to evaluate the strength of the relationship between independent variables (explanatory variables) and dependent variables (response variables), predict changes in dependent variables, and understand patterns in data, such as: univariate regression, multivariate regression, and multiple regression.

[0076] In this embodiment, the defect property information refers to the specific characteristics and related information of the defects existing in the crystal, such as severity, location, and quantity.

[0077] In this embodiment, failure mode prediction refers to predicting and preventing the occurrence of potential failure modes and their consequences in advance. Failure modes refer to various forms of failure that may occur in crystals. For example, in crystals, possible failure modes include surface roughness and excessive impurities.

[0078] In this embodiment, the crystal defect refers to the deviation between the internal structure of the crystal and the ideal perfect lattice structure. These defects can affect the physical, chemical and mechanical properties of the material, such as: Point defects: defects that occur at the atomic scale, such as: Vacancy: A position in a crystal lattice where one or more atoms are missing. Vacancies are usually created by thermal excitation at high temperatures, but can also be introduced by irradiation or plastic deformation.

[0079] Interstitial atoms: Extra atoms appear in positions that should be empty in the crystal lattice, usually due to excess addition or external pressure.

[0080] Impurity atoms: Atoms that are different from the matrix element occupy the normal positions in the crystal lattice, which is usually due to the mixing of impurity elements when the material is synthesized.

[0081] Line defects: refers to dislocations that exist on one-dimensional lines of the lattice, such as: Edge dislocation: A line in the crystal lattice where one part of the crystal slips relative to another part.

[0082] Screw dislocation: A part of the crystal lattice undergoes rotational slip along the dislocation line.

[0083] Mixed dislocation: It has the characteristics of both edge and screw dislocations.

[0084] The formation mechanism of dislocations is usually related to plastic deformation, temperature change, grain boundary movement and external stress.

[0085] Planar defects: refers to grain boundaries and subgrain boundaries, which exist between grains or between different orientation regions within grains, such as: Grain boundary: The interface between adjacent grains, usually of higher energy.

[0086] Subgrain boundary: An interface within a grain consisting of small regions with slightly different orientations.

[0087] The formation of grain boundaries is usually related to factors such as cooling rate, composition distribution and external stress during the crystallization process.

[0088] In this embodiment, the defects in the crystal will not only form inside the crystal, but also propagate inside it. The propagation path of the defects depends on the type of defects and their distribution in the crystal, such as: The propagation of point defects occurs through diffusion within the material.

[0089] The propagation of line defects is by sliding or climbing along the lattice planes, thereby propagating within the material.

[0090] The propagation of surface defects is achieved through the migration of grain boundaries.

[0091] In this embodiment, the characteristic parameters of the defect include: concentration, diffusion coefficient, migration energy, and change slope.

[0092] The beneficial effects of the above technical solution are: by performing regression analysis on the measurement data of defects, obtaining defect property information, and performing failure mode prediction, determining the formation mechanism and propagation path of the defects, the position of the defects in the crystal can be quickly located, the corresponding repair strategy can be accurately obtained, the effectiveness of the strategy can be improved, and the performance problems caused by the defects can be reduced.

[0093] Embodiment 7: Based on Example 6, the embodiment of the present invention performs regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtains defect property information according to the analysis results, and predicts the failure mode of the identified defects based on the defect property information, including: Determine the change parameters of multiple data items according to the concentration, type, migration kinetics and kinetic process of the defects, and construct a change monitoring sequence for each data item based on the change parameters; Obtain the abnormal features of each data item through the monitoring sequence of the change amount of each data item, and perform regression matching analysis on the abnormal features to determine the predicted defect type of each data item; The predicted defect types that appear repeatedly in all data items are regarded as qualitative defects of the crystal; Retrieving the explicit features of the defect description and the implicit features of the defect description of the qualitative defect from the database, and determining the crystal integrity under the qualitative defect according to the explicit features of the defect description and the implicit features of the defect description; Determine defect property information of qualitative defects based on crystal integrity, wherein the defect property information includes: general defect information, serious defect information and major defect information; Based on the defect property information of qualitative defects, the relationship function between the quality degradation and failure evolution of the crystal under the condition of multiple defects coexisting is obtained; Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain analysis results; Determine the correlation coefficient between each identified defect and other identified defects based on the analysis results; The correlation coefficient is used as the parameter value of the function of the relationship between the quality degradation and failure evolution of the crystal under the condition of coexistence of multiple defects, and the function calculation is performed to obtain the function calculation result; The failure mode of each identified defect is determined according to the function calculation result, wherein the failure mode includes: double defect covering failure and multiple defect hiding failure.

[0094] In this embodiment, the variation parameter of the data item is, for example, the defect type. The variation parameter of the defect type generally refers to the variation pattern of the defect in terms of time, location or nature, for example: Time Variation: Whether the defect changes over time, such as material fatigue causing the defect to appear over time.

[0095] Position change: Whether the defect changes as the object moves.

[0096] Changes in properties: Whether the properties of the defect change with time, location, etc., such as changes in material properties with temperature.

[0097] In this embodiment, the data item change monitoring sequence is a tool or method for monitoring changes in data items, and can track dynamic changes in data.

[0098] In this embodiment, regression matching analysis is a statistical method used to study the relationship between two or more variables.

[0099] In this embodiment, the qualitative defects of the crystal refer to the inherent defects existing in the crystal structure, and these defects may affect the physical, chemical and mechanical properties of the material.

[0100] In this embodiment, the dominant features of the defect refer to obvious and easily identifiable features that are directly observed, such as: Appearance characteristics: such as color changes, cracks, dents, bulges, and abnormal shapes.

[0101] Surface features: e.g. scratches, corrosion, wear, oxidation.

[0102] Structural features: such as fracture, dislocation, strain, and stress distribution.

[0103] Performance characteristics: e.g. strength, hardness, toughness, thermal conductivity.

[0104] In this embodiment, the hidden features of the defect refer to features that are not easily perceived or obvious, but affect product performance and safety to a certain extent, such as: Material properties: e.g. crystal structure, impurities, phase transition points.

[0105] Manufacturing process: e.g. temperature control, pressure, additives.

[0106] Usage environment: such as humidity, temperature, pollution.

[0107] Design defects: such as design errors, omissions, and unreasonableness.

[0108] In this embodiment, quality degradation refers to that during the use of the crystal, the performance of the crystal gradually decreases over time until it fails to meet the expected quality standard.

[0109] In this embodiment, the failure evolution relationship function is a process of evaluating the impact of factors such as product design, materials, and processes on product failure, and determining potential failure modes. Failure modes refer to the types of failures that may occur under specific conditions, and failure refers to the phenomenon that these failures lead to loss of product function or degradation of performance. The failure evolution relationship function is a model that describes the relationship between product failure modes.

[0110] In this embodiment, basic defect independent irrelevance analysis is a method for evaluating the correlation between two or more defects. This method is mainly based on the principle of "non-influence on each other", which holds that if two defects are unrelated in some aspects, their influence in other aspects may also be different.

[0111] In this embodiment, the correlation coefficient is a statistical indicator used to measure the strength of the relationship between two variables. The correlation coefficient ranges from -1 to 1. The closer it is to 1, the stronger the positive correlation between the two variables; the closer it is to -1, the stronger the negative correlation between the two variables; the closer it is to 0, the no obvious correlation between the two variables.

[0112] The beneficial effects of the above technical solution are: regression analysis of the concentration, type, migration dynamics and kinetic process of defects, acquisition of defect property information, and prediction of failure modes for identified defects, which can reduce the complexity of defect analysis and prediction, improve analysis efficiency, and further avoid crystal failures and malfunctions caused by defects, while also improving the reliability and safety of crystals.

[0113] Embodiment 8: The present invention provides a crystal defect detection and analysis system, such as Figure 2 As shown, including: Acquisition module: obtains the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determines the concentration of defects based on the resistivity; The first determination module: determines, based on the charge injection technology, that the behavior of carriers is affected by the attraction and inhibition of defects, determines the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determines the type and concentration of defects based on the current response and resistance change; The second determination module: obtains the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determines the transition time and relaxation time of the photoelectron, and determines the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Creation module: Create numerical models and predict the defect behavior of crystals at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of defects; Extraction module: Perform regression analysis on the concentration, type, migration dynamics and kinetic process of defects, extract characteristic parameters of defects, and implement defect detection and analysis of crystals based on the characteristic parameters.

[0114] The beneficial effects of the above technical solution are: by determining the concentration, type, migration dynamics and kinetic process of defects and performing regression analysis to determine the characteristic parameters of the defects, the detection speed can be improved. At the same time, the detection depth of the crystal is deep and does not stop at the surface. The defects inside the crystal can be accurately obtained, the performance of the material can be improved, and it can be accurately used in the production of semiconductor devices to improve the production efficiency of the device.

[0115] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0116] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A crystal defect detection and analysis method, characterized in that: include: Step 1: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined according to the resistivity; Step 2: Determine that the behavior of carriers is affected by the attraction and inhibition of defects based on the charge injection technique, determine the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determine the type of defect based on the current response and resistance change; Step 3: Obtain the light absorption process of the crystal under different light according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectron, and determine the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Step 4: Create a numerical model and predict the defect behavior of the crystal at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of the defect; Step 5: Perform regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, extract characteristic parameters of the defects, and implement defect detection and analysis of the crystal based on the characteristic parameters.

2. The crystal defect detection and analysis method according to claim 1, characterized in that: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined based on the resistivity, including: Determine the type of target crystal according to X-ray diffraction, and determine the heating temperature range and cooling temperature range of the crystal according to the type; Heating and cooling the crystal at different temperatures according to the heating temperature range and the cooling temperature range combined with the heating rate and the cooling rate; According to the heating and cooling results, the resistivity of the crystal under different sintering conditions is obtained based on the four-point probe method; determining the movement of electrons based on the resistivity, and determining the conductivity of the crystal based on the movement of the electrons; The electrical conductivity of the crystal is determined according to the electrical conductivity of the crystal in combination with the physical parameters of the crystal, and the concentration of defects is determined according to the electrical conductivity.

3. The crystal defect detection and analysis method according to claim 1, characterized in that: The charge injection technique determines that the behavior of carriers is affected by the attraction and inhibition of defects. The current response and resistance change after carrier injection are determined based on the attraction and inhibition. The defect type is determined based on the current response and resistance change, including: External charges are introduced into the crystal by ion implantation, and the region including the carrier injection region is continuously scanned to obtain a surface potential map of the scanned region; Determining the behavior of carriers in the crystal based on the surface potential map, and determining the influence of the attraction and inhibition of the defects on the carriers based on the behavior; Determine the electrical parameters after carrier injection based on the effects of attraction and inhibition; Determining a current response and a resistance change according to the electrical parameters; Response parameters and resistance change trends are determined according to the current response and the resistance change, and the type of defect is determined according to the response parameters and the resistance change trends.

4. The crystal defect detection and analysis method according to claim 1, characterized in that: Obtain the light absorption process of the crystal under different light according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectron, and determine the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron, including: Acquire the dark lines of the spectrum of the crystal under light of different wavelengths according to the light absorption spectrum, and determine the energy level transition of the crystal according to the dark lines of the spectrum; Determining the light absorption process of the crystal under different light according to the energy level transition of the crystal; Determining the transition time and relaxation time of the photoelectron according to the light absorption process, and obtaining defect information that causes the carrier lifetime to be shortened according to the transition time and relaxation time of the photoelectron; Migration kinetics of the defect are determined based on the defect information.

5. The crystal defect detection and analysis method according to claim 1, characterized in that: Create numerical models and predict the defect behavior of crystals at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamics of defects, including: Creating a numerical model based on the Monte Carlo method and inputting temperature-dependent carrier transport and defect motion into the numerical model; Obtain the prediction results of the numerical model and determine the defect behavior of the crystal at different temperatures based on the prediction results; The movement and change of the defect in the crystal are determined according to the defect behavior, and the dynamic process of the defect is obtained according to the movement and change.

6. The crystal defect detection and analysis method according to claim 1, characterized in that: The concentration, type, migration kinetics and kinetic process of the defects are regressed and analyzed to extract characteristic parameters of the defects. The defect detection and analysis of the crystal is performed based on the characteristic parameters, including: Performing regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtaining defect property information according to the analysis results, and predicting the failure mode of the identified defects based on the defect property information; Obtain the formation mechanism and propagation path of defects based on the prediction results; The characteristic parameters of the defects are extracted according to the formation mechanism and propagation path of the defects, the corresponding repair strategies are obtained according to the characteristic parameters, and the defect detection and analysis of the crystal is implemented according to the repair strategies.

7. The crystal defect detection and analysis method according to claim 6, characterized in that: Perform regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtain defect property information based on the analysis results, and predict the failure mode of the identified defects based on the defect property information, including: Determine the change parameters of multiple data items according to the concentration, type, migration kinetics and kinetic process of the defects, and construct a change monitoring sequence for each data item based on the change parameters; Obtain the abnormal features of each data item through the monitoring sequence of the change amount of each data item, and perform regression matching analysis on the abnormal features to determine the predicted defect type of each data item; The predicted defect types that appear repeatedly in all data items are regarded as qualitative defects of the crystal; Retrieving the explicit features of the defect description and the implicit features of the defect description of the qualitative defect from the database, and determining the crystal integrity under the qualitative defect according to the explicit features of the defect description and the implicit features of the defect description; Determine defect property information of qualitative defects based on crystal integrity, wherein the defect property information includes: general defect information, serious defect information and major defect information; Based on the defect property information of qualitative defects, the relationship function between the quality degradation and failure evolution of the crystal under the condition of multiple defects coexisting is obtained; Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain analysis results; Determine the correlation coefficient between each identified defect and other identified defects based on the analysis results; The correlation coefficient is used as the parameter value of the function of the relationship between the quality degradation and failure evolution of the crystal under the condition of coexistence of multiple defects, and the function calculation is performed to obtain the function calculation result; The failure mode of each identified defect is determined according to the function calculation result, wherein the failure mode includes: double defect covering failure and multiple defect hiding failure.

8. A crystal defect detection and analysis system, characterized in that: include: Acquisition module: obtains the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determines the concentration of defects based on the resistivity; The first determination module: determines, based on the charge injection technology, that the behavior of carriers is affected by the attraction and inhibition of defects, determines the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determines the type and concentration of defects based on the current response and resistance change; The second determination module: obtains the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determines the transition time and relaxation time of the photoelectron, and determines the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Creation module: Create numerical models and predict the defect behavior of crystals at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of defects; Extraction module: Perform regression analysis on the concentration, type, migration dynamics and kinetic process of defects, extract characteristic parameters of defects, and implement defect detection and analysis of crystals based on the characteristic parameters.

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