Radio frequency module

Abstract

The invention discloses a radio frequency module, which comprises a first tuner switch, and the first tuner switch comprises a first switch branch. The first switch branch comprises a first terminal, a second terminal, n switch units and n first resistors, the n switch units are sequentially connected between the first terminal of the first switch branch and the second terminal of the first switch branch in series, and the n first resistors are connected with the n switch units in parallel in a one-to-one correspondence mode. The first switch unit to the third switch unit from the first terminal of the first switch branch form a first switch network, the (n-2) th switch unit to the nth switch unit form a second switch network, and n is a positive integer greater than or equal to 6; at least one end of the first harmonic processing unit is connected with the first switching network, and at least one end of the second harmonic processing unit is connected with the second switching network; harmonic signals in the first tuner switch are suppressed, and the linearity of the first tuner switch is further improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency module. Background Art

[0002] On the communication terminal, wireless communication is achieved through the RF module. The RF module includes the RF front-end module and the antenna port module. The RF front-end module and the antenna port module work together to achieve the reception and transmission of RF signals. With the rapid development of mobile communication technology, higher requirements are placed on the performance of RF modules, such as high isolation, better linearity, low insertion loss, small size and low production cost. Summary of the invention

[0003] An embodiment of the present application provides a radio frequency module to solve the problem of poor linearity of a switching circuit on the radio frequency module.

[0004] A radio frequency module comprises an antenna tuning circuit, wherein the antenna tuning circuit comprises a first tuner switch, wherein a first end of the first tuner switch is configured to be connected to an antenna port, and a second end of the first tuner switch is configured to be grounded; the first tuner switch comprises a first switch branch, wherein the first switch branch comprises a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the first switch branch and the second terminal of the first switch branch, n first resistors, and n first resistors are connected in parallel with the n switch units in a one-to-one correspondence, at least one first harmonic processing unit and at least one second harmonic processing unit, wherein the first switch unit to the third switch unit starting from the first terminal of the first switch branch constitute a first switch network, and the switch units from the n-2nd to the nth switch units constitute a second switch network, where n is a positive integer greater than or equal to 6; wherein at least one end of the first harmonic processing unit is connected to the first switch network, and at least one end of the second harmonic processing unit is connected to the second switch network.

[0005] A radio frequency module comprises an antenna tuning circuit and a radio frequency front-end circuit, wherein the antenna tuning circuit comprises a first switch, and the radio frequency front-end circuit comprises a second switch; the first switch is connected between an antenna port and ground, the first switch comprises a third switch branch, the third switch branch comprises a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the third switch branch and the second terminal of the third switch branch, at least one first harmonic processing unit, and at least one second harmonic processing unit, wherein the first switch unit to the third switch unit starting from the first terminal constitute a first switch network, and the switch units from the n-2nd to the nth constitute a second switch network, where n is greater than or equal to 6; wherein the first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network; the second switch is connected between any two different nodes on the radio frequency front-end circuit, and the second switch The invention comprises a fourth switch branch, wherein the fourth switch branch comprises a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the fourth switch branch and the second terminal of the fourth switch branch, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, wherein the first switch unit to the third switch unit starting from the first terminal of the fourth switch branch constitute a fifth switch network, and the n-2 switch unit to the n-2 switch unit constitute a sixth switch network, where n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network; and when the first switch and the second switch are configured to support the same radio frequency signal transmission, the total number of the first harmonic processing unit and the second harmonic processing unit on the first switch is different from the total number of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch.

[0006] A radio frequency module comprises a radio frequency front-end circuit, the radio frequency front-end circuit comprises a second switch, the second switch comprises a fifth switch branch, the fifth switch branch comprises a first terminal, a second terminal, n switch units connected in series between the first terminal of the fifth switch branch and the second terminal of the fifth switch branch, n first resistors, n first resistors are connected in parallel with the n switch units in a one-to-one correspondence, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the fifth switch branch constitute a fifth switch network, and the switch unit from the n-2th switch unit to the nth switch unit constitutes a sixth switch network, where n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

[0007] In a first embodiment, a radio frequency module includes an antenna tuning circuit, the antenna tuning circuit includes a first tuner switch, the first end of the first tuner switch is configured to be connected to an antenna port, and the second end of the first tuner switch is configured to be grounded; the first tuner switch includes a first switch branch, the first switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal of the first switch branch and the second terminal of the first switch branch, n first resistors, n first resistors are connected in parallel with the n switch units one by one, at least one first harmonic processing unit and at least one second harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the first switch branch constitute a first switch network, and the switch unit from the n-2th switch unit to the nth switch unit constitutes a second switch network, and n is a positive integer greater than or equal to 6; wherein at least one end of the first harmonic processing unit is connected to the first switch network, and at least one end of the second harmonic processing unit is connected to the second switch network. This embodiment can not only improve the uneven distribution of the voltage swing on the first switch branch under the joint action of n first resistors, the first harmonic processing unit and the second harmonic processing unit, but also effectively suppress or eliminate harmonic signals at different powers to improve the linearity of the first tuner switch; thereby optimizing the overall performance of the RF module.

[0008] In a second embodiment, a radio frequency module includes an antenna tuning circuit and a radio frequency front-end circuit, the antenna tuning circuit includes a first switch, and the radio frequency front-end circuit includes a second switch; the first switch is connected between an antenna port and a ground, the first switch includes a third switch branch, the third switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the third switch branch and the second terminal of the third switch branch, at least one first harmonic processing unit and at least one second harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal constitute a first switch network, and the n-2 switch unit to the n-2 switch unit constitute a second switch network, where n is greater than or equal to 6; wherein the first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network; the second switch is connected between any two different nodes on the radio frequency front-end circuit, the second switch includes a fourth switch branch, the fourth switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the fourth switch branch and the second terminal of the fourth switch branch, at least one A fifth harmonic processing unit and at least one sixth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the fourth switch branch constitute a fifth switch network, and the n-2th switch unit to the nth switch unit constitute a sixth switch network, where n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network; when the first switch and the second switch are configured to support the same RF signal transmission, the total number of the first harmonic processing unit and the second harmonic processing unit on the first switch is different from the total number of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch; in this embodiment, when the first switch and the second switch are configured to support the same RF signal transmission, by making the total number of the first harmonic processing unit and the second harmonic processing unit on the first switch different from the total number of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch; thereby effectively suppressing or eliminating harmonic signals at different powers, so as to improve the linearity of the RF module, and thus optimize the overall performance of the RF module.

[0009] In a third embodiment, a radio frequency module includes a radio frequency front-end circuit, the radio frequency front-end circuit includes a second switch, the second switch includes a fifth switch branch, the fifth switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the fifth switch branch and the second terminal of the fifth switch branch, n first resistors, n first resistors are connected in parallel with the n switch units one by one, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, and the first switch unit from the first terminal of the fifth switch branch to the third switch unit. The n-2th switch unit to the n-2th switch unit constitute a fifth switch network, and the n-2th switch unit to the n-th switch unit constitute a sixth switch network, where n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network. This embodiment can not only improve the uneven distribution of the voltage swing on the fifth switch branch under the joint action of the n first resistors, the fifth harmonic processing unit and the sixth harmonic processing unit, but also effectively suppress or eliminate harmonic signals at different powers to improve the linearity of the second switch; thereby optimizing the overall performance of the RF module. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0011] Figure 1 is a schematic diagram of a radio frequency module in one embodiment of the present application;

[0012] Figure 2 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0013] Figure 3 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0014] Figure 4 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0015] Figure 5 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0016] Figure 6 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0017] Figure 7 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0018] Figure 8 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0019] Fig. 9 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0020] Fig.10 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0021] Fig.11 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0022] Fig.12 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0023] Fig.13 is another schematic diagram of a radio frequency module in one embodiment of the present application;

[0024] Fig.14 is a simulation schematic diagram of a radio frequency module in an embodiment of the present application;

[0025] Fig.15 It is a simulation schematic diagram of a radio frequency module in one embodiment of the present application. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0027] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0028] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0029] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0030] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0031] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0032] as follows Figure 1 and2 As shown, this embodiment provides a radio frequency module, including an antenna tuning circuit, the antenna tuning circuit including a first tuner switch 100, the first end of the first tuner switch 100 is configured to be connected to the antenna port, and the second end of the first tuner switch is configured to be grounded; the first tuner switch 100 includes a first switch branch, the first switch branch includes a first terminal A, a second terminal B, n switch units (K1-Kn) sequentially connected in series between the first terminal of the first switch branch and the second terminal of the first switch branch, and n first resistors. (R1-Rn), n first resistors are connected in parallel with n switch units one by one, at least one first harmonic processing unit 11 and at least one second harmonic processing unit 21, the first switch unit to the third switch unit starting from the first terminal constitute the first switch network 10, and the second switch network 20 is constituted from the n-2 switch unit to the n switch unit, n is greater than or equal to 6; wherein at least one end of the first harmonic processing unit 11 is connected to the first switch network 10, and at least one end of the second harmonic processing unit 21 is connected to the second switch network 20. It should be noted that "connection" in this application can be understood as direct connection or indirect connection.

[0033] In a specific embodiment, the antenna tuning circuit is configured to tune the impedance at the antenna and determine the best tuning state for antenna tuning based on the antenna impedance. In this embodiment, the first end of the first tuner switch is configured to be connected to the antenna through the antenna port, and the second end of the first tuner switch is configured to be grounded.

[0034] In a specific embodiment, as follows Figure 2As shown, the first switch branch includes n switch units and n first resistors, wherein the first end of the first switch unit K1 among the n switch units is connected to the first terminal A, the second end of the first switch unit K1 is connected to the first end of the second switch unit K2, the second end of the second switch unit K2 is connected to the first end of the third switch unit K3, the second end of the n-2th switch unit Kn-2 is connected to the first end of the n-1th switch unit Kn-1, the second end of the n-1th switch unit Kn-1 is connected to the first end of the nth switch unit Kn, and the second end of the nth switch unit is connected to the second terminal B; the two ends of the resistor R1 are respectively connected to the first end and the second end of the first switch unit K1, the two ends of the resistor R2 are respectively connected to the first end and the second end of the second switch unit K2... and so on, the two ends of the resistor Rn are respectively connected to the first end and the second end of the nth switch unit Kn, wherein n is a positive integer greater than or equal to 6. Among them, the resistance value of each first resistor is generally between 10KOhm and 20KOhm, which can not only be used to stabilize the DC potential at both ends of the switch unit to prevent the switch from generating a DC voltage drop during the switching process, but also improve the uneven distribution of the voltage swing on the first switch branch and improve the linearity.

[0035] In a specific embodiment, at least one end of the first harmonic processing unit 11 is connected to the first switch network 10. Specifically, one end of the first harmonic processing unit 11 can be connected to a node on the first switch network 10, and the other end can be connected to other nodes on the first switch branch, or both ends of the first harmonic processing unit 11 are connected to nodes on the first switch network 10. Similarly, at least one end of the second harmonic processing unit 21 is connected to the second switch network 20. Specifically, one end of the second harmonic processing unit 21 can be connected to a node on the first switch network 20, and the other end can be connected to other nodes on the first switch branch, or both ends of the second harmonic processing unit 21 are connected to nodes on the second switch network 20.

[0036] The first harmonic processing unit 11 and the second harmonic processing unit 21 may be composed of diodes, transistors, or MOS capacitors.

[0037] In a specific embodiment, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are the same. For example, the first harmonic processing unit and the second harmonic processing unit are both composed of two reversely connected transistors, and the two reversely connected transistors can be connected in parallel or in series. The two reversely connected transistors can be two reversely connected diodes or two reversely connected triodes.

[0038] In at least one embodiment, the first harmonic processing unit 11 includes a first diode and a second diode connected in parallel in reverse order, the anode of the first diode is connected to the cathode of the second diode, and the anode of the second diode is connected to the cathode of the first diode. Similarly, the second harmonic processing unit 12 includes a third diode and a fourth diode connected in parallel in reverse order, the anode of the third diode is connected to the cathode of the fourth diode, and the anode of the fourth diode is connected to the cathode of the third diode. Further, the first diode and the second diode are the same, and all parameters (e.g., area) of the third diode and the fourth diode are the same.

[0039] When the RF signal passes through the first diode and the second diode, a self-bias voltage is generated. Based on the directionality of the diode, the self-bias voltage makes the first diode and the second diode work in turn. In this working state, the current of the first diode and the second diode changes with time. The superimposed current of the two will generate a first suppression signal that is different from the phase of the RF signal on the first switch branch. Through this first suppression signal, the harmonic signal on the first switch branch can be suppressed or eliminated, thereby improving the linearity of the first tuner switch. It should be noted that the working principle of the second harmonic processing unit 21 is the same as the working principle of the first harmonic processing unit 11, and will not be repeated here.

[0040] In a specific embodiment, the number of the first harmonic processing units and the number and specific structure of the second harmonic processing units can be set according to actual needs. The number of the first harmonic processing units and the number of the second harmonic processing units can be the same or different. For example: the number of the first harmonic processing units and the number of the second harmonic processing units are both 1, or the number of the first harmonic processing units is 2 and the number of the second harmonic processing units is 1.

[0041] In at least one embodiment, the number of the first harmonic processing units is the same as the number of the second harmonic processing units.

[0042] In at least one embodiment, the RF module includes multiple first harmonic processing units and multiple second harmonic processing units, and the first ends and / or second ends of different first harmonic processing units are respectively connected to different nodes on the transmission path of the first switching network, and the first ends and / or second ends of different second harmonic processing units are respectively connected to different nodes on the transmission path of the second switching network.

[0043] In a specific embodiment, the harmonic processing units connected to the same two nodes of the first switch branch are defined as one harmonic processing unit, and among the two first harmonic processing units, at least one end of one first harmonic processing unit and the other first harmonic processing unit are connected to different nodes. Figure 4 As shown, the harmonic processing unit 111 and the harmonic processing unit 112 are connected in parallel at both ends of the switch unit K1, and the harmonic processing unit 111 and the harmonic processing unit 112 are equivalent to a first harmonic processing unit 11. Figure 3 The first harmonic processing unit 11, Figure 4 The first harmonic processing unit 11 in the figure can be understood as a harmonic processing unit with an increased area. It should be noted that the number of the second harmonic processing units is determined in the same manner as the first harmonic processing unit, and no redundant description is given here.

[0044] In a specific embodiment, when the first tuner switch 100 includes a plurality of first harmonic processing units, the circuit structure of each of the first harmonic processing units is the same. For example, the circuit structure of the first harmonic processing unit 11 is the same as that of the first harmonic processing unit 12. Each of the first harmonic processing units is composed of a diode.

[0045] Alternatively, each of the first harmonic processing units may be different. For example, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are different, the first harmonic processing unit 11 is composed of a diode, and the second harmonic processing unit 12 is composed of a MOS capacitor.

[0046] It should be noted that, in the case where the first tuner switch 100 includes a plurality of second harmonic processing units, the implementation of the second harmonic processing unit 21 refers to the above-mentioned first harmonic processing unit, and redundant description is omitted here.

[0047] The multiple in this embodiment includes 2 or more.

[0048] as follows Fig.14 As shown in FIG. 1 , it is a simulation effect diagram of the embodiment in which different numbers of the first harmonic processing units and the second harmonic processing units are connected to the first switch network composed of the 1st to 3rd switch units and the second switch network composed of the n-2nd to nth switch units, respectively, when the areas of each of the first harmonic processing units and each of the second harmonic processing units are the same. Fig.14In , the horizontal axis represents the power Pin of the input signal, and the vertical axis represents the power Harmin ics of the harmonic signal. Among them, the blue curve 0_0 represents the power situation of the harmonic signal on the first switch branch when the first harmonic processing unit and the second harmonic processing unit are not connected, the orange curve 1_1 represents the power situation of the harmonic signal on the first switch branch when one first harmonic processing unit is connected to the first switch network and one second harmonic processing unit is connected to the second switch network respectively; the gray curve 2_2 represents the power situation of the harmonic signal on the first switch branch when two first harmonic processing units are connected to the first switch network and two second harmonic processing units are connected to the second switch network respectively; the yellow curve 3_3 represents the power situation of the harmonic signal on the first switch branch when three first harmonic processing units are connected to the first switch network and three second harmonic processing units are connected to the second switch network respectively. By Fig.14 It can be seen that this embodiment can effectively suppress or eliminate harmonic signals at different powers by connecting different numbers of the first harmonic processing units to the first switch network composed of the 1st switch unit to the 3rd switch unit, and connecting different numbers of the second harmonic processing units to the second switch network composed of the n-2nd switch unit to the nth switch unit.

[0049] In this embodiment, on the one hand, by connecting the first resistor in parallel at both ends of each switch unit, the uneven distribution of the voltage swing on the switch link is improved by the first resistor to ensure linearity. However, since the harmonic signals on the first three switch units close to the first terminal and the last three switch units close to the second terminal in the first switch branch are relatively obvious, the first harmonic processing unit is connected to the first switch network composed of the first switch unit to the third switch unit, and the second harmonic processing unit is connected to the second switch network composed of the n-2 switch unit to the nth switch unit; compared with the method of connecting the harmonic processing unit to any switch unit in the related art, this embodiment can not only improve the uneven distribution of the voltage swing on the switch link under the joint action of n first resistors, the first harmonic processing unit and the second harmonic processing unit, but also effectively suppress or eliminate harmonic signals at different powers, ensure that the performance of the first tuner switch at low power is not affected, and suppress or eliminate the harmonic signals on the first switch branch at high power, so as to improve the linearity of the first tuner switch while ensuring the performance; thereby optimizing the overall performance of the RF module.

[0050] In this embodiment, a radio frequency module includes an antenna tuning circuit, wherein the antenna tuning circuit includes a first tuner switch, wherein a first end of the first tuner switch is configured to be connected to an antenna port, and a second end of the first tuner switch is configured to be grounded; the first tuner switch includes a first switch branch, wherein the first switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the first switch branch and the second terminal of the first switch branch, n first resistors, and n first resistors are connected in parallel with the n switch units one by one, at least one first harmonic processing unit and at least one second harmonic processing unit, and the first switch unit to the third switch unit starting from the first terminal of the first switch branch constitute a first switch network, and from The n-2th switch unit to the nth switch unit constitute a second switch network, where n is a positive integer greater than or equal to 6; wherein at least one end of the first harmonic processing unit is connected to the first switch network, and at least one end of the second harmonic processing unit is connected to the second switch network; under the joint action of n first resistors, the first harmonic processing unit and the second harmonic processing unit, this embodiment can not only improve the uneven distribution of the voltage swing on the first switch branch, but also effectively suppress or eliminate harmonic signals at different powers, ensure that the performance of the first tuner switch at low power is not affected, and suppress or eliminate the harmonic signal on the first switch branch at high power, so as to improve the linearity of the first tuner switch while ensuring the performance; thereby optimizing the overall performance of the RF module.

[0051] In a specific embodiment, the first terminal is configured to be connected to a node on the signal transmission path, and the second terminal is configured to be grounded. When the first terminal is configured to be connected to a node on the signal transmission path, and the second terminal is configured to be grounded, the switch unit in the first tuner switch transmits the RF signal input from the node on the signal transmission path to the ground terminal when in the on state.

[0052] In a specific embodiment, the number of the first harmonic processing units 11 is different from the number of the second harmonic processing units 12 .

[0053] In at least one embodiment, since the voltage division between different switch units on the first switch branch is different, the magnitude of the generated harmonic signal is also different. Therefore, in order to effectively suppress the harmonic signal of each switch unit on the first switch branch, the number of the first harmonic processing units connected to the first switch network is different from the number of the second harmonic processing units 12 connected to the second switch network. The harmonic signal on the first switch branch can be suppressed or eliminated more flexibly.

[0054] In a specific embodiment, the number of the first harmonic processing units 11 is greater than the number of the second harmonic processing units 12 .

[0055] As an example, when the area of ​​each switch unit on the first switch branch is the same, the voltage V of the first three switch units close to the first terminal on the first switch branch is DS Than the voltage V on the last three switch units close to the second terminal DS The harmonic signal is more obvious, therefore, by making the number of the first harmonic processing units greater than the number of the second harmonic processing units, the harmonic signal on the first switch branch can be further effectively suppressed or eliminated, thereby improving the harmonic suppression effect. For example: the number of the first harmonic processing units is 2, and the number of the second harmonic processing units is 1.

[0056] In a specific embodiment, as follows Figure 5 As shown, the first tuner switch 100 is an aperture tuning circuit. One end of the first tuner switch 100 is configured to be connected to the first antenna port, and the other end of the first tuner switch is configured to be grounded. The aperture tuning circuit can be used to improve the efficiency of the antenna port.

[0057] In a specific embodiment, as follows Figure 5 As shown, the first tuner switch is a single-pole multi-throw switch, and the first tuner switch also includes a third end, and the third end of the first tuner switch is connected to the second end of the first tuner switch and then grounded. It can be understood that the third end of the first tuner switch and the second end of the first tuner switch are fixed ends and then grounded, and the first end of the first tuner switch is a moving end configured to be connected to the antenna port.

[0058] In a specific embodiment, as follows Figure 6 As shown, the RF module further includes a second tuner switch 101. The second tuner switch 101 and the second tuner switch 100 may be connected to the same antenna port. Alternatively, the second tuner switch 101 and the second tuner switch 100 may also be connected to different antenna ports, respectively. For example, the first tuner switch 100 is connected to the first antenna port, and the second tuner switch 101 is connected to the second antenna port.

[0059] In a specific embodiment, the antenna tuning circuit further includes a second tuner switch, wherein the first end of the second tuner switch is configured to be connected to the antenna port, the second end of the first tuner switch is configured to be grounded, the second tuner switch 101 includes a second switch branch, the second switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal of the second switch branch and the second terminal of the second switch branch, n second resistors, and n second resistors are connected in parallel with the n switch units one by one, at least one third harmonic processing unit and at least one fourth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the second switch branch constitute a third switch network, and the switch units from the n-2nd to the nth constitute a fourth switch network, where n is greater than or equal to 6; wherein at least one end of the third harmonic processing unit is connected to the third switch network, and at least one end of the fourth harmonic processing unit is connected to the fourth switch network.

[0060] In this embodiment, the specific structure, connection method and function of the second resistor, the third harmonic processing unit and the fourth harmonic processing unit in the second tuner switch 101 are the same as the specific structure, connection method and function of the first resistor, the first harmonic processing unit and the second harmonic processing unit in the first tuner switch 100 in the above embodiment, and are not redundantly described here.

[0061] In this embodiment, the RF module also includes a second tuner switch, the second tuner switch includes a second switch branch, the second switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal of the second switch branch and the second terminal of the second switch branch, n second resistors, n second resistors are connected in parallel with the n switch units one by one, at least one third harmonic processing unit and at least one fourth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the second switch branch constitute a third switch network, and the switch unit from the n-2th switch unit to the nth switch unit constitutes a fourth switch network, and n is greater than or equal to. 6; wherein, at least one end of the third harmonic processing unit is connected to the third switch network, and at least one end of the fourth harmonic processing unit is connected to the fourth switch network; under the joint action of the n second resistors, the third harmonic processing unit and the fourth harmonic processing unit, this embodiment can not only improve the uneven distribution of the voltage swing on the switch link, but also effectively suppress or eliminate the harmonic signals under different powers, ensure that the performance of the second tuner switch at low power is not affected, and suppress or eliminate the harmonic signals on the second switch branch at high power, so as to improve the linearity of the second tuner switch while ensuring the performance; thereby optimizing the overall performance of the RF module.

[0062] In a specific embodiment, the first tuner switch is configured to support RF signal transmission in a first frequency band, and the second tuner switch is configured to support RF signal transmission in a second frequency band, wherein the first frequency band is larger than the second frequency band; the total area of ​​the first harmonic processing unit and the second harmonic processing unit is larger than the total area of ​​the third harmonic processing unit and the fourth harmonic processing unit. The areas of the first harmonic processing unit, the second harmonic processing unit, the third harmonic processing unit, and the fourth harmonic processing unit can be obtained by a simulation tool (e.g., a simulation tool cadence).

[0063] In at least one embodiment, the higher the working frequency band of the RF signal transmitted by the switching circuit, the more obvious its harmonic signal. Therefore, in order to more flexibly process the harmonic signals on the first tuner switch and the second tuner switch, when the first tuner switch is configured to support a frequency band of RF signals greater than the frequency band of RF signals supported by the second tuner switch, the total area of ​​the first harmonic processing unit and the second harmonic processing unit is made greater than the total area of ​​the third harmonic processing unit and the fourth harmonic processing unit, thereby achieving effective suppression or elimination of harmonic signals of different frequency bands transmitted on the first tuner switch and the second tuner switch, thereby optimizing the overall performance of the RF module.

[0064] In a specific embodiment, the first tuner switch is configured to suppress harmonic signals of a first power, and the total number of the first harmonic processing unit and the second harmonic processing unit is X; the second tuner switch is configured to suppress harmonic signals of a second power, and the total number of the third harmonic processing unit and the fourth harmonic processing unit is Y; wherein the first power is less than or equal to the second power, and X is less than or equal to Y.

[0065] In a specific embodiment, when the power of the RF signal transmitted by the first tuner switch is greater, the power of the harmonic signal to be suppressed will also be greater, and the influence of the harmonic signal on the circuit will also be greater. Therefore, when the second tuner switch is configured to suppress the harmonic signal with a larger power, the number of the third harmonic processing unit and the fourth harmonic processing unit will be more, so as to generate harmonics with opposite phases to offset the harmonic signal with a larger power. When the first tuner switch is configured to suppress the harmonic signal with a smaller power, in order to avoid affecting other performances of the circuit, the total number of the first harmonic processing unit and the second harmonic processing unit can be reduced, so as to reduce the circuit components and reduce the cost under the premise of effectively suppressing the harmonic signals at different powers.

[0066] as follows Fig.15As shown, it is a simulation effect diagram of this embodiment when different numbers of the first harmonic processing units and the second harmonic processing units are connected to the first switch network composed of the 1st switch unit to the 3rd switch unit and the second switch network composed of the n-2nd switch unit to the nth switch unit. Fig.15 Compared to Fig.14 The difference is Fig.15 The area of ​​each of the first harmonic processing units and each of the second harmonic processing units is greater than Fig.14 Each of the first harmonic processing units and each of the second harmonic processing units. Fig.15 In , the horizontal axis represents the power Pin of the input signal, and the vertical axis represents the power Harmin ics of the harmonic signal. Among them, the black curve 0_0 represents the power of the harmonic signal on the first switch branch without connecting the first harmonic processing unit and the second harmonic processing unit; the gray curve 1_1 represents the power of the harmonic signal on the first switch branch when one first harmonic processing unit is connected to the first switch network and one second harmonic processing unit is connected to the second switch network; the green curve 2_2 represents the power of the harmonic signal on the first switch branch when two first harmonic processing units are connected to the first switch network and two second harmonic processing units are connected to the second switch network; the blue curve 3_3 represents the power of the harmonic signal on the first switch branch when three first harmonic processing units are connected to the first switch network and three second harmonic processing units are connected to the second switch network. Through the simulation Fig.14 and simulation Fig.15 By comparing the simulation diagram of , it can be seen that when the number of the first harmonic processing unit and the second harmonic processing unit is the same, if the areas of the first harmonic processing unit and the second harmonic processing unit are different, their ability to suppress harmonic signals is also different. For example: Fig.14 The orange curve 3_3 and Fig.15 The blue curves 3_3 in the figure represent the power of the harmonic signal on the first switch branch when three first harmonic processing units are connected to the first switch network and three second harmonic processing units are connected to the second switch network. However, due to the different areas of the first harmonic processing unit and the second harmonic processing unit, Fig.14 The orange curve 3_3 in the figure has the best suppression effect on the harmonic signal with a power point of 33dBm. Fig.15The blue curve 3_3 in FIG has the best suppression effect on the harmonic signal with a power point of 37 dBm. It can be seen that when it is necessary to suppress a harmonic signal with a relatively high power, when the number of the first harmonic processing unit and the second harmonic processing unit is not variable, the area of ​​the first harmonic processing unit and the second harmonic processing unit can be increased to achieve effective suppression of the harmonic signal with a relatively high power point.

[0067] In this embodiment, the first tuner switch is configured to suppress harmonic signals of a first power, and the total number of the first harmonic processing unit and the second harmonic processing unit is X; the second tuner switch is configured to suppress harmonic signals of a second power, and the total number of the third harmonic processing unit and the fourth harmonic processing unit is Y; wherein, the first power is less than or equal to the second power, and X is less than or equal to Y; thereby, the harmonic signals at different powers can be effectively suppressed or eliminated while ensuring that the circuit performance is not affected, thereby improving the linearity of the circuit.

[0068] In a specific embodiment, when the first tuner switch is configured to support a radio frequency signal of a first frequency band, the area range of one of the first harmonic processing units is [20um 2 ,50um 2 ], the area range of the second harmonic processing unit is [20um 2 ,50um 2 ], wherein the range of the first frequency band is [0,900MHz].

[0069] In a specific embodiment, the first tuner switch is configured to support a radio frequency signal of a second frequency band, and an area range of the first harmonic processing unit is [30um 2 ,80um 2 ], the area range of the second harmonic processing unit is [30um 2 ,80um 2 ], wherein the range of the second frequency band is [900MH, 1880MHz].

[0070] It should be noted that the area of ​​the first harmonic processing unit and the area of ​​the second harmonic processing unit in this embodiment can be determined by a simulation tool (for example, a simulation tool cadence).

[0071] It can be seen from the above embodiments that when the first tuner switch is configured to transmit RF signals of different frequency bands, the area of ​​the first harmonic processing unit and the area of ​​the second harmonic processing unit can be configured to be different. When the first tuner switch is configured to transmit RF signals of a higher frequency band, the area of ​​the first harmonic processing unit and the second harmonic processing unit are configured to be larger areas; when the first tuner switch is configured to transmit RF signals of a lower frequency band, the first harmonic processing unit and the second harmonic processing unit are configured to be smaller areas, thereby achieving effective suppression or elimination of harmonic signals of different frequency bands transmitted on the first tuner switch, thereby optimizing the overall performance of the RF module.

[0072] In a specific embodiment, the first tuner switch is configured to suppress a first harmonic signal, wherein the power of the first harmonic signal is less than or equal to 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit is in the range of [1,3].

[0073] In a specific embodiment, the first tuner switch is configured to suppress a second harmonic signal, wherein the power of the first harmonic signal is greater than 39 dBm, and the total number of the first harmonic processing units and the second harmonic processing units is in the range of [3, 5].

[0074] In a specific embodiment, the first tuner switch is configured to suppress a third harmonic signal, wherein the power of the first harmonic signal is less than or equal to 35 dBm, the number of the first harmonic processing units is 1, and the number of the second harmonic processing units is 1.

[0075] In a specific embodiment, the first tuner switch is configured to suppress a fourth harmonic signal, the power range of the fourth harmonic signal is [43dBm, 48dBm], the number of the first harmonic processing units is 2, and the number of the second harmonic processing units is 2.

[0076] It can be seen from the above embodiments that when the first tuner switch is configured to suppress radio frequency signals of different frequency bands, the number of first harmonic processing units and the number of second harmonic processing units are different. When the first tuner switch is configured to suppress higher-power harmonic signals, the number of first harmonic processing units and the number of second harmonic processing units are larger; when the first tuner switch is configured to suppress lower-power harmonic signals, the number of first harmonic processing units and the number of second harmonic processing units are smaller. For harmonic signals of different power sizes, by setting different numbers of first harmonic processing units and the second harmonic processing units, the harmonic signals at different power points on the first tuner switch can be effectively suppressed to improve the overall performance of the circuit.

[0077] In a specific embodiment, the switch unit is a first field effect transistor, the gate of the first field effect transistor is configured to be connected to a bias control terminal Vb, and the bias control terminal Vb is configured to receive an external bias control voltage to turn on or off the switch unit. The first end of the first resistor is connected to the source of the field effect transistor, and the first end of the first resistor is connected to the drain of the field effect transistor. The first field effect transistor can be a PMOS tube or an NMOS tube.

[0078] As an example, the switch unit includes at least one transistor. The transistor is a first field effect transistor (MOS tube). As an example, the first end of the switch unit is a drain, and the second end of the switch unit is a source. The drain of the first switch unit among the n switch units is connected to the first terminal, the source of the first switch unit is connected to the drain of the second switch unit, the source of the n-1 switch unit is connected to the drain of the n switch unit, and the source of the n switch unit is connected to the second terminal, wherein n is a positive integer greater than or equal to 6. The first end of the first resistor R1 is connected to the drain of the switch unit K1, the second end of the first resistor R1 is connected to the source of the switch unit K1, the first end of the first resistor R2 is connected to the drain of the switch unit K2, the second end of the first resistor R2 is connected to the source of the switch unit K2, the first end of the first resistor Rn is connected to the drain of the switch unit Kn, and the second end of the first resistor Rn is connected to the source of the switch unit Kn.

[0079] As an example, the first end of the switch unit is a source, and the second end of the switch unit is a drain. The source of the first switch unit among the n switch units is connected to the first terminal, the drain of the first switch unit is connected to the source of the second switch unit, the drain of the n-1th switch unit is connected to the source of the nth switch unit, and the drain of the nth switch unit is connected to the second terminal, where n is a positive integer greater than or equal to 6. The first end of the first resistor R1 is connected to the source of the switch unit K1, the second end of the first resistor R1 is connected to the drain of the switch unit K1, the first end of the first resistor R2 is connected to the source of the switch unit K2, the second end of the first resistor R2 is connected to the drain of the switch unit K2, the first end of the first resistor Rn is connected to the source of the switch unit Kn, and the second end of the first resistor Rn is connected to the drain of the switch unit Kn.

[0080] In a specific embodiment, the first tuner switch further includes a second field effect transistor, the source of the second field effect transistor is connected to the body of the first field effect transistor, the gate of the second field effect transistor is connected to the drain, and is connected to the gate of the first field effect transistor. The second field effect transistor can be a PMOS transistor or an NMOS transistor.

[0081] In this embodiment, by connecting the second field effect transistor, the second field effect transistor can effectively reduce the harmonics (for example, the second harmonic or the third harmonic) when the switch unit is switched without additionally increasing the resistance value of the first resistor.

[0082] In a specific embodiment, the first field effect transistor is an NMOS transistor, and the second field effect transistor is a PMOS transistor.

[0083] In this embodiment, since the first field effect transistor is a transistor on the switch branch and the NMOS tube is a transistor that is forward-conducting and reverse-off, by making the first field effect transistor an NMOS tube and the second field effect transistor a PMOS tube, the harmonics (for example, second harmonics or third harmonics) during the switching of the switch unit can be reduced while ensuring the normal switching of the first tuner switch.

[0084] In a specific embodiment, when the first ends of the plurality of first harmonic processing units are connected to the first node on the transmission path of the first switch network, and the second ends of the plurality of first harmonic processing units are connected to the second node on the transmission path of the first switch network, the plurality of first harmonic processing units are equivalent to a first harmonic processing unit with a larger area. When the first ends of the plurality of second harmonic processing units are connected to the third node on the transmission path of the second switch network, and the second ends of the plurality of second harmonic processing units are connected to the fourth node on the transmission path of the second switch network, the plurality of second harmonic processing units are equivalent to a second harmonic processing unit with a larger area.

[0085] In a specific embodiment, the RF module includes multiple first harmonic processing units and multiple second harmonic processing units, at least one end of different first harmonic processing units is connected to different nodes on the transmission path of the first switching network, and at least one end of different second harmonic processing units is connected to different nodes on the transmission path of the second switching network.

[0086] It should be noted that the nodes on the transmission path between two interconnected switch units are the same nodes, for example, all nodes on the connection path between the second end of the first tuner switch unit and the first end of the second switch unit connected to each other are the same node.

[0087] In addition, a node on a connection path between the second end of the first tuner switch unit and the first end of the second switch unit and a node on a connection path between the second end of the second switch unit and the first end of the third switch unit are different nodes.

[0088] As an example: the multiple first harmonic processing units include two first harmonic processing units, wherein the first end of one of the first harmonic processing units is connected to the first end of the first tuner switch unit, and the second end is connected to the second end of the first tuner switch unit, and the first end of the other first harmonic processing unit is connected to the second end of the first tuner switch unit, and the second end is connected to the second end of the second switch unit.

[0089] As another example: the multiple first harmonic processing units include two first harmonic processing units, wherein the first end of one of the first harmonic processing units is connected to the first end of the first tuner switch unit, and the second end is connected to the second end of the first tuner switch unit; the first end of the other first harmonic processing unit is connected to the second end of the second switch unit, and the second end is connected to the first end of the third switch unit.

[0090] In a specific embodiment, the first end of the first harmonic processing unit is connected to a first node in the first switching network, and the second end of the first harmonic processing unit is connected to a second node in the first switching network, wherein the first node and the second node are located at different nodes on the transmission path of the first switching network.

[0091] The nodes on the first switch network include a connection node between the first terminal A and the first end of the first switch unit K1, a connection node between the second end of the first tuner switch unit K1 and the first end of the second switch unit K2, a connection node between the second end of the second switch unit K2 and the first end of the third switch unit K3, and a connection node between the second end of the third switch unit K3 and the first end of the fourth switch unit K4. For example, the switch unit is a field effect transistor, the first end of the switch unit is a source, and the second end of the switch unit is a drain, or the first end of the switch unit is a drain, and the second end of the switch unit is a source.

[0092] In at least one embodiment, the first node is a connection node between the first terminal A and the first end of the first switch unit, and the second node is a connection node between the second end of the first tuner switch unit and the first end of the second switch unit.

[0093] In a specific embodiment, the first end of the second harmonic processing unit is connected to the third node in the second switch network, and the second end of the second harmonic processing unit is connected to the fourth node in the second switch network, wherein the third node and the fourth node are located at different nodes on the transmission path of the second switch network.

[0094] The nodes on the second switch network include a connection node between the second terminal B and the second end of the nth switch unit, a connection node between the first end of the nth switch unit and the second end of the n-1th switch unit, a connection node between the first end of the n-1th switch unit and the second end of the n-2th switch unit, and a connection node between the first end of the n-2th switch unit and the second end of the n-3th switch unit. For example, the switch unit is a field effect transistor, the first end of the switch unit is a source, and the second end of the switch unit is a drain, or the first end of the switch unit is a drain, and the second end of the switch unit is a source.

[0095] In at least one embodiment, the third node is a connection node between the second terminal B and the second end of the nth switch unit, and the fourth node is a connection node between the first end of the nth switch unit and the second end of the (n-1)th switch unit.

[0096] In a specific embodiment, since different switch units in the first tuner switch have different voltage division sizes, the voltages at both ends of the switch units closer to the first terminal and the second terminal are often larger (for example, the voltage at both ends of the first tuner switch unit K1, the voltage at both ends of the nth switch unit Kn). Therefore, by connecting a first harmonic processing unit in parallel between the first end and the second end of the first switch unit, and connecting a second harmonic processing unit in parallel between the first end and the second end of the nth switch unit, not only can the harmonic signal in the first tuner switch be suppressed and the linearity of the first tuner switch be improved, but also the problem of different voltage division sizes borne by different switch units in the first tuner switch can be further improved, thereby improving the reliability of the first tuner switch.

[0097] In a specific embodiment, both ends of the first harmonic processing unit are connected to nodes on the first switch network, and both ends of the second harmonic processing unit are connected to nodes on the second switch network.

[0098] As an example, the first end of the first harmonic processing unit is connected to the first end of the first switch unit, and the second end of the first harmonic processing unit is connected to the second end of the first switch unit. The first end of the second harmonic processing unit is connected to the first end of the nth switch unit, and the second end of the second harmonic processing unit is connected to the second end of the nth switch unit.

[0099] In a specific embodiment, the first end of the first harmonic processing unit is connected to a node in the first switch network, the second end of the first harmonic processing unit is connected to a node outside the first switch network, the first end of the second harmonic processing unit is connected to a node in the second switch network, and the second end of the second harmonic processing unit is connected to a node outside the second switch network.

[0100] As an example, the first end of the first harmonic processing unit is connected to a connection node between the first terminal and the first end of the first switch unit, and the second end of the first harmonic processing unit is connected to a connection node between the second end of the fourth switch unit and the first end of the fifth switch unit. The first end of the second harmonic processing unit is connected to a connection node between the first end of the nth switch unit and the second end of the n-1th switch unit, and the second end of the second harmonic processing unit is connected to a connection node between the first end of the n-5th switch unit and the second end of the n-4th switch unit.

[0101] In a specific embodiment, refer to the following Figure 8 As shown, the first harmonic processing unit includes a first diode M1, a second diode M2, a first tuning resistor R1, and a second tuning resistor R2. The first end of the first tuning resistor R1 is connected to the cathode of the first diode M1 and then connected to the first end of the first harmonic processing unit. The second end of the second tuning resistor R2 is connected to the cathode of the second diode M2 ​​and then connected to the second end of the first harmonic processing unit. The second end of the first tuning resistor is connected to the first end of the second tuning resistor. The anode of the first diode is connected to the second end of the first tuning resistor. The anode of the second diode M2 ​​is connected to the first end of the second tuning resistor R2.

[0102] In a specific embodiment, the second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor (not shown in the figure), the first end of the third tuning resistor is connected to the cathode of the third diode and then connected to the first end of the second harmonic processing unit, the second end of the fourth tuning resistor is connected to the cathode of the fourth diode and then connected to the second end of the second harmonic processing unit, the second end of the third tuning resistor is connected to the first end of the fourth tuning resistor, the anode of the third diode is connected to the second end of the third tuning resistor, and the anode of the fourth diode is connected to the first end of the fourth tuning resistor. It should be noted that the specific structural schematic diagram of the second harmonic processing unit in this embodiment can be referred to. Figure 8 Schematic diagram of the first harmonic processing unit.

[0103] In a specific embodiment, refer to the following Fig. 9As shown, the first harmonic processing unit includes a first diode M1, a second diode M2, a first tuning resistor R1, and a second tuning resistor R2, a first node where the cathode of the first diode is connected to the anode of the second diode is connected to a first end of the first resistor, a second end of the first resistor is connected to a first end of the first harmonic processing unit, a second node where the anode of the first diode is connected to the cathode of the second diode is connected to a first end of the second resistor, and a second end of the second resistor is connected to a second end of the second harmonic processing unit.

[0104] In a specific embodiment, the second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor (not shown in the figure), the first node where the cathode of the third diode is connected to the anode of the fourth diode is connected to the first end of the third resistor, the second end of the third resistor is connected to the first end of the second harmonic processing unit, the second node where the anode of the third diode is connected to the cathode of the fourth diode is connected to the first end of the fourth resistor, and the second end of the fourth resistor is connected to the second end of the second harmonic processing unit. It should be noted that the specific structural schematic diagram of the second harmonic processing unit in this embodiment can be referred to. Fig. 9 Schematic diagram of the first harmonic processing unit.

[0105] In another specific embodiment, the first diode, the second diode, the third diode, and the fourth diode can all be replaced by field effect transistors, that is, the function of the diode can also be achieved by the field effect transistors.

[0106] In a specific embodiment, the first harmonic processing unit and the second harmonic processing unit are configured to generate a first suppression signal, the first suppression signal has a phase difference of [±170°~±190°] with the harmonic signal in the first tuner switch, and the amplitude of the first suppression signal can be set according to actual conditions.

[0107] As an example, when the phase of the first suppression signal differs from the phase of the harmonic signal in the first tuner switch by ±180°, the suppression effect on the harmonic signal in the first tuner switch is better. Further, when the phase of the first suppression signal differs from the phase of the harmonic signal in the first tuner switch by ±180° and the amplitude is completely consistent, the suppression effect on the harmonic signal in the first tuner switch is further better. It can be understood that in this embodiment, the first suppression signal having a phase difference of [±170°~±190°] with the harmonic signal in the first tuner switch is generated by the first harmonic processing unit and the second harmonic processing unit. The first suppression signal and the harmonic signal in the first tuner switch can at least partially offset each other, thereby achieving suppression of the harmonic signal in the first tuner switch, thereby improving linearity.

[0108] Optionally, the harmonic signal in the first tuner switch may be a second-order harmonic signal, a third-order harmonic signal, or a harmonic signal of any order. The present application does not specifically limit the type of the harmonic signal.

[0109] As an example, when the RF signal passes through the first diode M1 and the second diode M2, a self-bias voltage is generated. Based on the directionality of the transistor, the self-bias voltage causes the first diode M1 and the second diode M2 ​​to work alternately. In this working state, the current of the first diode M1 and the second diode M2 ​​changes with time. The superimposed current of the two will generate a first suppression signal that is different in phase from the RF signal on the switch branch. The first suppression signal can be used to suppress or eliminate the harmonic signal on the switch branch, thereby improving the linearity of the circuit.

[0110] In a specific embodiment, when the first diode is turned on, the second diode is turned off, and when the second diode is turned on, the first diode is turned off. The first signal formed when the RF signal passes through the first diode and the second signal formed when the RF signal passes through the second diode are superimposed to form the first suppression signal. It should be noted that in this implementation, the first diode and the second diode can generate self-bias, and can be turned on at a specific moment without the need for additional bias voltage. It can be seen that at the same moment, only one diode is turned on and the other transistor is turned off, that is, the first diode is turned on in half a cycle, and the second diode is turned on in the other half a cycle. The first signal formed when the RF signal passes through the first diode and the second signal formed when the RF signal passes through the second diode are superimposed to form a complete first suppression signal. The first suppression signal is used to suppress the harmonic signal in the first tuner switch, thereby improving the linearity of the circuit.

[0111] It should be noted that the working mechanism and function of the third diode and the fourth diode are the same as those of the first diode and the second diode, and are not redundantly described here.

[0112] In a specific embodiment, the first tuning resistor R1 and the second tuning resistor R2 in the first harmonic processing unit are used to protect the first diode M1 and the second diode M2 ​​from being broken down by an excessive voltage. In this embodiment, the first resistor R1 is connected in parallel with the first diode M1, the second tuning resistor R2 is connected in parallel with the second diode M2, and the second end of the first tuning resistor R1 is connected to the second end of the second tuning resistor R2, so that the first diode M1 and the second diode M2 ​​can be protected from being broken down by an excessive voltage, thereby improving the reliability of the first diode M1 and the second diode M2.

[0113] It should be noted that the working mechanism and function of the third tuning resistor and the fourth tuning resistor in the second harmonic processing unit are the same as those of the first tuning resistor and the second tuning resistor, and are not redundantly described here.

[0114] In a specific embodiment, refer to the following Fig.10As shown, the first harmonic processing unit includes a first transistor N1 and a second transistor N2; the first end of the first transistor is connected to the first end of the first harmonic processing unit, the second end of the first transistor is connected to the first end of the second transistor, and the second end of the second transistor is connected to the second end of the first harmonic processing unit. As an example, the first transistor and the second transistor are both first diodes, the first end of the first transistor and the first end of the second transistor are the positive electrode of the first diode, and the second end of the first transistor and the second end of the second transistor are the negative electrode of the first diode. In this embodiment, the two first diodes are reversely connected. When the bias voltage is applied to the two first diodes, the two first diodes can be equivalent to a capacitor with a continuously changing capacitance. When the radio frequency signal passes through the first harmonic processing unit, the two first diodes can jointly generate a first suppression signal, and the first suppression signal can suppress the harmonic signal in the radio frequency signal. In a specific embodiment, the second harmonic processing unit includes a third transistor and a fourth transistor (not shown in the figure); the first end of the third transistor is connected to the first end of the second harmonic processing unit, the second end of the third transistor is connected to the first end of the fourth transistor, and the second end of the fourth transistor is connected to the second end of the second harmonic processing unit. As an example, the third transistor and the fourth transistor are both second diodes, the first end of the third transistor and the first end of the fourth transistor are the positive electrodes of the second diodes, and the second end of the third transistor and the second end of the fourth transistor are the negative electrodes of the second diodes. The two second diodes in this embodiment are connected in reverse. When a bias voltage is applied to the two second diodes, the two second diodes can be equivalent to a capacitor with a continuously changing capacitance. When the RF signal passes through the second harmonic processing unit, the two second diodes can jointly generate a first suppression signal, which can suppress the harmonic signal in the RF signal. It should be noted that the specific structural diagram of the third transistor and the fourth transistor of the second harmonic processing unit in this embodiment can be referred to. Fig.10 Schematic diagram of a first transistor N1 and a second transistor N2 in a first harmonic processing unit.

[0115] In a specific embodiment, each of the switch units includes at least one field effect transistor, the gate of the switch unit is the bias control terminal of the switch unit, the source of the switch unit is the first terminal of the switch unit, the drain of the switch unit is the second terminal of the switch unit, and the drain of the previous switch unit is connected to the source of the next switch unit in the n switch units. As an example, each of the switch units includes at least one field effect transistor, and the drain of the previous switch unit is connected to the source of the next switch unit in the n switch units. As an example, the source of the first tuner switch unit in the n switch units is connected to the first terminal, the drain of the first tuner switch unit is connected to the source of the second switch unit, the drain of the n-1th switch unit is connected to the source of the nth switch unit, and the drain of the Nth switch unit is connected to the second terminal, wherein n is a positive integer. Since the drain of the previous switch unit among the n switch units is directly connected to the source of the next switch unit, the connection node between two adjacent switch units is the drain of the previous switch unit or the source of the next switch unit.

[0116] This embodiment also provides a radio frequency module, see below Fig.11 As shown, an antenna tuning circuit and a radio frequency front-end circuit, the antenna tuning circuit includes a first switch 201, and the radio frequency front-end circuit includes a second switch 202; the first switch 201 is connected between the antenna port and the ground GND, the first switch 201 includes a third switch branch, the third switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the third switch branch and the second terminal of the third switch branch, at least one first harmonic processing unit and at least one second harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the third switch branch constitute a first switch network, and the switch unit from the n-2th switch unit to the nth switch unit constitute a second switch network, and n is greater than or equal to 6; wherein the first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network.

[0117] In a specific embodiment, at least one end of the first harmonic processing unit 11 is connected to the first switch network 10, that is, the first harmonic processing unit 11 can be connected to a node on the first switch network 10 at one end, and connected to other nodes on the third switch branch at the other end, or both ends of the first harmonic processing unit 11 are connected to nodes on the first switch network 10. Similarly, at least one end of the second harmonic processing unit 21 is connected to the second switch network 20, that is, the second harmonic processing unit 21 can be connected to a node on the first switch network 20 at one end, and connected to other nodes on the third switch branch at the other end, or both ends of the second harmonic processing unit 21 are connected to nodes on the second switch network 20.

[0118] Wherein, the first harmonic processing unit and the second harmonic processing unit can both be composed of diodes, transistors or MOS capacitors.

[0119] In a specific embodiment, when the first switch 201 includes a plurality of first harmonic processing units, the circuit structure of each of the first harmonic processing units is the same. For example, the circuit structure of the first harmonic processing unit 11 is the same as that of the first harmonic processing unit 12. The first harmonic processing unit 11 and the first harmonic processing unit 12 are both composed of diodes.

[0120] Alternatively, each of the first harmonic processing units may also be different, for example, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are different, the first harmonic processing unit is composed of a diode, and the second harmonic processing unit is composed of a MOS capacitor.

[0121] It should be noted that, in the case where the first switch 201 includes a plurality of second harmonic processing units, the implementation of the second harmonic processing unit 21 refers to the above-mentioned first harmonic processing unit, and redundant description is omitted here.

[0122] In a specific embodiment, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are the same. For example, the first harmonic processing unit and the second harmonic processing unit are both composed of diodes.

[0123] In a specific embodiment, the circuit structures of the first harmonic processing unit 11 and the second harmonic processing unit 21 are different. The first harmonic processing unit is composed of a diode, and the second harmonic processing unit is composed of a MOS capacitor.

[0124] The second switch 202 is connected between any two different nodes on the signal transmission path of the RF front-end circuit, and the second switch includes a fourth switch branch, and the fourth switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal of the fourth switch branch and the second terminal of the fourth switch branch, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the fourth switch branch constitute a fifth switch network, and the n-2th switch unit to the nth switch unit constitute a sixth switch network, where n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

[0125] In a specific embodiment, at least one end of the fifth harmonic processing unit is connected to the fifth switch network, that is, the fifth harmonic processing unit can be connected to a node on the fifth switch network at one end and connected to other nodes on the fourth switch branch at the other end, or both ends of the fifth harmonic processing unit are connected to nodes on the fifth switch network. Similarly, at least one end of the sixth harmonic processing unit is connected to the sixth switch network, that is, the sixth harmonic processing unit can be connected to a node on the sixth switch network at one end and connected to other nodes on the fourth switch branch at the other end, or both ends of the sixth harmonic processing unit are connected to nodes on the sixth switch network.

[0126] In a specific embodiment, the fifth harmonic processing unit and the sixth harmonic processing unit can be composed of a diode, a triode (for example, a MOS tube), or a MOS capacitor. The circuit structure of the fifth harmonic processing unit and the sixth harmonic processing unit is the same. For example, the fifth harmonic processing unit and the sixth harmonic processing unit are both composed of diodes. Alternatively, the circuit structure of the fifth harmonic processing unit and the sixth harmonic processing unit is different, the fifth harmonic processing unit is composed of a diode, and the fifth harmonic processing unit is composed of a MOS capacitor.

[0127] In a specific embodiment, when the second switch 202 includes more than two fifth harmonic processing units, the circuit structure of each of the fifth harmonic processing units is the same. For example, each of the fifth harmonic processing units is composed of a diode. Alternatively, each of the fifth harmonic processing units may be different, for example, a portion of the fifth harmonic processing units is composed of a diode, and another portion of the fifth harmonic processing units is composed of a MOS capacitor.

[0128] It should be noted that, in the case where the second switch 100 includes more than two sixth harmonic processing units, the implementation of the sixth harmonic processing unit refers to the fifth harmonic processing unit described above, and no redundant description is given here.

[0129] It should be noted that the connection mode, structure and function of the first harmonic processing unit, the second harmonic processing unit, the fifth harmonic processing unit and the sixth harmonic processing unit in this embodiment are similar to the connection mode, structure and function of the first harmonic processing unit and the second harmonic processing unit in the above-mentioned embodiments, and no redundant description is given here.

[0130] In a specific embodiment, when the first switch 201 and the second switch 202 are configured to support the same RF signal, the total number of the first harmonic processing units and the second harmonic processing units on the first switch 201 is different from the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch.

[0131] In at least one embodiment, the first switch 201 and the second switch 202 are two switch circuits connected to the same radio frequency path. The first switch 201 and the second switch 202 may be directly connected, or other components may be provided between the first switch 201 and the second switch 202. The first switch 201 is mainly connected to the antenna port end, and may be used to reduce the loss caused by impedance mismatch or to improve the efficiency of the antenna port. The second switch 202 may be a switching switch or a frequency band selection switch connected to the receiving path RX or the transmitting path TX, or may be an antenna switch (ASM switch) connected to the antenna port.

[0132] In at least one embodiment, since the output end of the second switch 202 needs to meet the impedance matching of 50 ohms, and the impedance on the first switch 201 is often variable and may be greater than 50 ohms, the power of the RF signal transmitted on the first switch 201 is often greater than the power of the RF signal transmitted on the second switch 202. Therefore, the power of the harmonic signal to be suppressed by the first switch 201 is often different from the power of the harmonic signal to be suppressed by the second switch 202. Therefore, when the first switch 201 and the second switch 202 are configured to support the same RF signal, the total number of the first harmonic processing unit and the second harmonic processing unit on the first switch 201 and the total number of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch are configured to be different, so that the harmonic signals of different power sizes on different switches on the RF path can be effectively suppressed, thereby improving the linearity and performance of the RF module.

[0133] In a specific embodiment, the RF module includes multiple first harmonic processing units and multiple second harmonic processing units and multiple fourth harmonic processing units, the first ends and / or second ends of different first harmonic processing units are respectively connected to different nodes on the transmission path of the first switching network, the first ends and / or second ends of different second harmonic processing units are respectively connected to different nodes on the transmission path of the second switching network; the first ends and / or second ends of different fifth harmonic processing units are respectively connected to different nodes on the transmission path of the fifth switching network; the first ends and / or second ends of different sixth harmonic processing units are respectively connected to different nodes on the transmission path of the sixth switching network.

[0134] In this embodiment, the harmonic processing unit connected to the same two nodes of the first switch 201 is defined as one harmonic processing unit, and among the two first harmonic processing units, at least one end of one first harmonic processing unit and the other first harmonic processing unit are connected to different nodes. Figure 4 As shown, the harmonic processing unit 111 and the harmonic processing unit 112 are connected in parallel at both ends of the switch unit K1, and the harmonic processing unit 111 and the harmonic processing unit 112 are equivalent to a first harmonic processing unit 11. Figure 3 The first harmonic processing unit 11, Figure 4 The first harmonic processing unit 11 in the figure can be understood as a harmonic processing unit with an enlarged area.

[0135] It should be noted that the method for determining the number of the second harmonic processing unit, the fifth harmonic processing unit and the sixth harmonic processing unit is the same as that of the first harmonic processing unit, and redundant description is omitted here.

[0136] In a specific embodiment, when the first switch 201 and the second switch 202 are configured to support the same RF signal, the total number of the first harmonic processing units and the second harmonic processing units 200 on the first switch 201 is greater than the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch 202.

[0137] In a specific embodiment, since the power of the RF signal transmitted by the first switch is greater than the power of the RF signal transmitted by the second switch, by setting the number of the first harmonic processing unit and the second harmonic processing unit on the first switch to be greater than the number of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch, it is possible to effectively suppress harmonic signals of different power sizes on different switches on the RF path while ensuring that the performance of the RF module is not affected, thereby improving the linearity and performance of the RF module.

[0138] In this embodiment, the number of the first harmonic processing unit and the second harmonic processing unit is greater than the number of the fifth harmonic processing unit and the sixth harmonic processing unit, so as to generate harmonics with opposite phases to offset the harmonic signal with higher power on the first switch.

[0139] In a specific embodiment, when the first switch and the second switch are configured to support the same RF signal, an area of ​​the first harmonic processing unit and / or the second harmonic processing unit on the first switch is larger than a total size of the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch.

[0140] In a specific embodiment, since the power of the RF signal transmitted by the first switch is greater than the power of the RF signal transmitted by the second switch, the area of ​​the first harmonic processing unit and / or the second harmonic processing unit on the first switch is set to be larger than the area of ​​the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch, so as to effectively suppress harmonic signals of different power sizes on different switches on the RF path, thereby improving the linearity and performance of the RF module.

[0141] In this embodiment, the area of ​​the first harmonic processing unit and / or the second harmonic processing unit is larger than the area of ​​the fifth harmonic processing unit and / or the sixth harmonic processing unit, so as to generate harmonics with opposite phases to offset the higher power harmonic signal on the first tuner switch 100.

[0142] In a specific application scenario, the first end of the first switch is connected to the antenna port, the second end of the resonant switch circuit is grounded, the first end of the second switch is connected to the antenna port, and the second end of the second switch is connected to the filter.

[0143] In at least one embodiment, the first switch is connected to a path close to the antenna port. The first switch and the antenna port may be directly connected, or other components (e.g., matching elements) may be provided between the first switch and the antenna port. The second switch may be an antenna switch, with a first end connected to the antenna port and a second end connected to an amplifier. The antenna switch and the antenna port may be directly connected, or other components (e.g., matching elements) may be provided between the antenna switch and the antenna port. The antenna switch and the filter may be directly connected, or other components (e.g., filtering elements or matching elements) may be provided between the antenna switch and the filter. The amplifier may be a low noise amplifier on a receiving path or a power amplifier on a transmitting path.

[0144] In a specific application scenario, the first end of the first switch is connected to the antenna port, the second end of the first switch is grounded, the first end of the second switch is connected to the first filter, and the second end of the second switch is connected to the amplifier.

[0145] In at least one embodiment, the first harmonic processing unit and the second harmonic processing unit connected to the first switch are mainly used to suppress harmonic signals within the working frequency band. The fourth harmonic processing unit and the fifth harmonic processing unit connected to the second switch are mainly used to suppress harmonic signals within the working frequency band. The first filter is mainly used to suppress harmonic signals outside the working frequency band.

[0146] In at least one embodiment, the first switch is connected to a path close to the antenna port. The first switch and the antenna port may be directly connected, or other components (e.g., matching elements) may be provided between the first switch and the antenna port. The second switch may be a band selection switch, with a first end connected to the first filter and a second end connected to the amplifier. The band selection switch and the first filter may be directly connected, or other components (e.g., matching elements) may be provided between the band selection switch and the first filter. The band selection switch and the amplifier may be directly connected, or other components (e.g., matching elements) may be provided between the band selection switch and the antenna port. The amplifier may be a low noise amplifier on a receiving path or a power amplifier on a transmitting path.

[0147] This embodiment also provides a radio frequency module, including a radio frequency front-end circuit, the radio frequency front-end circuit including a second switch, the second switch including a fifth switch branch, the fifth switch branch including a first terminal, a second terminal, n switch units connected in series between the first terminal of the fifth switch branch and the second terminal of the fifth switch branch, n first resistors, n first resistors are connected in parallel with the n switch units one by one, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the fifth switch branch constitute a fifth switch network, and the switch unit from the n-2th switch unit to the nth switch unit constitutes a sixth switch network, n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

[0148] It should be noted that the specific implementation methods and functions of the second switch, the fifth harmonic processing unit and the sixth harmonic processing unit in this embodiment are the same as those in the above embodiments, and are not redundantly described here.

[0149] In this embodiment, a radio frequency module includes a radio frequency front-end circuit, the radio frequency front-end circuit includes a second switch, the second switch includes a fifth switch branch, the fifth switch branch includes a first terminal, a second terminal, n switch units connected in series between the first terminal of the fifth switch branch and the second terminal of the fifth switch branch, n first resistors, n first resistors are connected in parallel with the n switch units one by one, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the fifth switch branch constitute a fifth switch network, and the n-2 switch unit to the n switch unit constitute a sixth switch network, n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network. In this embodiment, under the joint action of the n first resistors, the fifth harmonic processing unit and the sixth harmonic processing unit, not only can the uneven distribution of the voltage swing on the switch link be improved, but also the harmonic signals at different powers can be effectively suppressed or eliminated to improve the linearity of the second switch; thereby optimizing the overall performance of the radio frequency module.

[0150] In a specific embodiment, the second switch is connected in series in the radio frequency signal transmission path.

[0151] In a specific embodiment, the second switch is an RF antenna switch, a first end of the RF antenna switch is connected to an antenna port, and a second end of the RF antenna switch is connected to a filter, or the second switch is a band selection switch, a first end of the band selection switch is connected to a filter, and a second end of the RF antenna switch is connected to an amplifier.

[0152] In at least one specific embodiment, the second switch is a radio frequency antenna switch, a first end of which is connected to an antenna port, and a second end of which is connected to a filter. The radio frequency antenna switch and the antenna port may be directly connected, or other components (e.g., matching elements) may be provided between the radio frequency antenna switch and the antenna port. The radio frequency antenna switch and the filter may be directly connected, or other components (e.g., filtering elements or matching elements) may be provided between the radio frequency antenna switch and the filter. The filter may be a filter on a receiving path or a filter on a transmitting path.

[0153] In at least one specific embodiment, the second switch may be a frequency band selection switch, the first end of which is connected to the first filter, and the second end of which is connected to the amplifier. The frequency band selection switch and the first filter may be directly connected, or other components (e.g., matching elements) may be provided between the frequency band selection switch and the first filter. The frequency band selection switch and the amplifier may be directly connected, or other components (e.g., matching elements) may be provided between the frequency band selection switch and the antenna port. The amplifier may be a low noise amplifier on a receiving path or a power amplifier on a transmitting path.

[0154] This embodiment also provides a radio frequency front-end module, characterized in that it includes the second switching circuit described in the above embodiment.

[0155] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A radio frequency module, characterized in that: The invention comprises an antenna tuning circuit, wherein the antenna tuning circuit comprises a first tuner switch, wherein a first end of the first tuner switch is configured to be connected to an antenna port, and a second end of the first tuner switch is configured to be grounded; the first tuner switch comprises a first switch branch, wherein the first switch branch comprises a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the first switch branch and the second terminal of the first switch branch, n first resistors, and n first resistors are connected in parallel with the n switch units in a one-to-one correspondence, at least one first harmonic processing unit and at least one second harmonic processing unit, wherein the first switch unit to the third switch unit starting from the first terminal of the first switch branch constitute a first switch network, and the switch units from the n-2nd to the nth switch units constitute a second switch network, and n is a positive integer greater than or equal to 6; wherein at least one end of the first harmonic processing unit is connected to the first switch network, and at least one end of the second harmonic processing unit is connected to the second switch network.

2. The radio frequency module according to claim 1, characterized in that: The number of the first harmonic processing units is different from the number of the second harmonic processing units.

3. The radio frequency module according to claim 2, characterized in that: The number of the first harmonic processing units is greater than the number of the second harmonic processing units.

4. The radio frequency module according to claim 1, characterized in that: The first tuner switch is a single-pole multi-throw switch. The first tuner switch also includes a third end. The third end of the first tuner switch is connected to the second end of the first tuner switch and then grounded.

5. The radio frequency module according to claim 1, characterized in that: The antenna tuning circuit also includes a second tuner switch, wherein a first end of the second tuner switch is configured to be connected to an antenna port, a second end of the first tuner switch is configured to be grounded, the second tuner switch includes a second switch branch, the second switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the second switch branch and the second terminal of the second switch branch, n second resistors, n second resistors are connected in parallel with the n switch units one by one, at least one third harmonic processing unit and at least one fourth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the second switch branch constitute a third switch network, and the switch units from the n-2nd to the nth constitute a fourth switch network, where n is greater than or equal to 6; wherein at least one end of the third harmonic processing unit is connected to the third switch network, and at least one end of the fourth harmonic processing unit is connected to the fourth switch network.

6. The radio frequency module according to claim 5, characterized in that: The first tuner switch is configured to support transmission of radio frequency signals in a first frequency band, and the second tuner switch is configured to support transmission of radio frequency signals in a second frequency band, wherein the first frequency band is larger than the second frequency band; A total area of ​​the first harmonic processing unit and the second harmonic processing unit is greater than a total area of ​​the third harmonic processing unit and the fourth harmonic processing unit.

7. The radio frequency module according to claim 5, characterized in that: The first tuner switch is configured to suppress a harmonic signal of a first power, and the total number of the first harmonic processing unit and the second harmonic processing unit is X; The second tuner switch is configured to suppress the harmonic signal of the second power, and the total number of the third harmonic processing unit and the fourth harmonic processing unit is Y; The first power is less than or equal to the second power, and X is less than or equal to Y.

8. The radio frequency module according to claim 1, wherein: When the first tuner switch is configured to support the transmission of radio frequency signals in the first frequency band, the area range of the first harmonic processing unit is [20um 2 ,50um 2 ], the area range of the second harmonic processing unit is [20um 2 ,50um 2 ], wherein the range of the first frequency band is [0,900MHz].

9. The radio frequency module according to claim 1, characterized in that: The first tuner switch is configured to support the transmission of radio frequency signals in the second frequency band, and the area range of the first harmonic processing unit is [30um 2 ,80um 2 ], the area range of the second harmonic processing unit is [30um 2 ,80um 2 ], wherein the range of the second frequency band is [900MH, 1880MHz].

10. The radio frequency module according to claim 1, characterized in that: The first tuner switch is configured to suppress a first harmonic signal, wherein the power of the first harmonic signal is less than or equal to 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit is in the range of [1, 3].

11. The radio frequency module according to claim 1, characterized in that: The first tuner switch is configured to suppress a second harmonic signal, wherein the power of the first harmonic signal is greater than 39 dBm, and the total number of the first harmonic processing unit and the second harmonic processing unit is in the range of [3, 5].

12. The radio frequency module according to claim 1, characterized in that: The first tuner switch is configured to suppress a third harmonic signal, wherein a power of the first harmonic signal is less than or equal to 35 dBm, the number of the first harmonic processing units is 1, and the number of the second harmonic processing units is 1.

13. The radio frequency module according to claim 1, characterized in that: The first tuner switch is configured to suppress a fourth harmonic signal, the power range of the fourth harmonic signal is [43dBm, 48dBm], the number of the first harmonic processing units is 2, and the number of the second harmonic processing units is 2.

14. The radio frequency module according to claim 1, characterized in that: The switch unit is a first field effect transistor, the gate of the first field effect transistor is configured to be connected to the bias control terminal, the first end of the first resistor is connected to the source of the field effect transistor, and the first end of the first resistor is connected to the drain of the field effect transistor.

15. The radio frequency module according to claim 14, characterized in that: The first tuner switch further includes a second field effect transistor, a source of the second field effect transistor being connected to a body of the first field effect transistor, and a gate of the second field effect transistor being connected to a drain and to a gate of the first field effect transistor.

16. The radio frequency module according to claim 14, characterized in that: The first field effect transistor is an NMOS transistor, and the second field effect transistor is a PMOS transistor.

17. The radio frequency module according to claim 1, characterized in that: The RF module includes multiple first harmonic processing units and multiple second harmonic processing units, at least one end of different first harmonic processing units is connected to different nodes on the transmission path of the first switching network, and at least one end of different second harmonic processing units is connected to different nodes on the transmission path of the second switching network.

18. The radio frequency module according to claim 17, characterized in that: Both ends of the first harmonic processing unit are connected to nodes on the first switch network, and both ends of the second harmonic processing unit are connected to nodes on the second switch network; Alternatively, the first end of the first harmonic processing unit is connected to a node in the first switching network, the second end of the first harmonic processing unit is connected to a node outside the first switching network, the first end of the second harmonic processing unit is connected to a node in the second switching network, and the second end of the second harmonic processing unit is connected to a node outside the second switching network.

19. The radio frequency module according to claim 1, characterized in that: The first harmonic processing unit includes a first diode, a second diode, a first tuning resistor, and a second tuning resistor, wherein the first end of the first tuning resistor is connected to the cathode of the first diode and then connected to the first end of the first harmonic processing unit, the second end of the second tuning resistor is connected to the cathode of the second diode and then connected to the second end of the first harmonic processing unit, the second end of the first tuning resistor is connected to the first end of the second tuning resistor, the anode of the first diode is connected to the second end of the first tuning resistor, and the anode of the second diode is connected to the first end of the second tuning resistor; The second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor. The first end of the third tuning resistor is connected to the cathode of the third diode and then connected to the first end of the second harmonic processing unit. The second end of the fourth tuning resistor is connected to the cathode of the fourth diode and then connected to the second end of the second harmonic processing unit. The second end of the third tuning resistor is connected to the first end of the fourth tuning resistor, the anode of the third diode is connected to the second end of the third tuning resistor, and the anode of the fourth diode is connected to the first end of the fourth tuning resistor.

20. The radio frequency module according to claim 1, characterized in that: The first harmonic processing unit includes a first diode, a second diode, a first tuning resistor, and a second tuning resistor, wherein a first node where a cathode of the first diode is connected to an anode of the second diode is connected to a first end of the first resistor, a second end of the first resistor is connected to a first end of the first harmonic processing unit, a second node where an anode of the first diode is connected to a cathode of the second diode is connected to a first end of the second resistor, and a second end of the second resistor is connected to a second end of the second harmonic processing unit; The second harmonic processing unit includes a third diode, a fourth diode, a third tuning resistor, and a fourth tuning resistor. The first node where the cathode of the third diode is connected to the anode of the fourth diode is connected to the first end of the third resistor, the second end of the third resistor is connected to the first end of the second harmonic processing unit, the second node where the anode of the third diode is connected to the cathode of the fourth diode is connected to the first end of the fourth resistor, and the second end of the fourth resistor is connected to the second end of the second harmonic processing unit.

21. The radio frequency module according to claim 1, characterized in that: The first harmonic processing unit includes a first transistor and a second transistor; the first end of the first transistor is connected to the first end of the first harmonic processing unit, the second end of the first transistor is connected to the first end of the second transistor, and the second end of the second transistor is connected to the second end of the first harmonic processing unit; The second harmonic processing unit includes a third transistor and a fourth transistor; the first end of the third transistor is connected to the first end of the second harmonic processing unit, the second end of the third transistor is connected to the first end of the fourth transistor, and the second end of the fourth transistor is connected to the second end of the second harmonic processing unit.

22. The radio frequency module according to claim 21, characterized in that: The first transistor and the second transistor are both first diodes, the first end of the first transistor and the first end of the second transistor are the anode of the first diode, and the second end of the first transistor and the second end of the second transistor are the cathode of the first diode; the third transistor and the fourth transistor are both second diodes, the first end of the third transistor and the first end of the fourth transistor are the anode of the second diode, and the second end of the third transistor and the second end of the fourth transistor are the cathode of the second diode.

23. A radio frequency module, characterized in that: It includes an antenna tuning circuit and a radio frequency front-end circuit, wherein the antenna tuning circuit includes a first switch, and the radio frequency front-end circuit includes a second switch; The first switch is connected between the antenna port and the ground, the first switch includes a third switch branch, the third switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the third switch branch and the second terminal of the third switch branch, at least one first harmonic processing unit and at least one second harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal constitute a first switch network, and the switch units from the n-2th to the nth constitute a second switch network, where n is greater than or equal to 6; wherein the first harmonic processing unit is connected to the first switch network, and the second harmonic processing unit is connected to the second switch network; The second switch is connected between any two different nodes on the signal transmission path of the RF front-end circuit, the second switch includes a fourth switch branch, the fourth switch branch includes a first terminal, a second terminal, n switch units sequentially connected in series between the first terminal of the fourth switch branch and the second terminal of the fourth switch branch, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, the first switch unit to the third switch unit starting from the first terminal of the fourth switch branch constitute a fifth switch network, and the n-2 switch unit to the n switch unit constitute a sixth switch network, where n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network; When the first switch and the second switch are configured to support the same RF signal transmission, the total number of the first harmonic processing units and the second harmonic processing units on the first switch is different from the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch.

24. The radio frequency module according to claim 23, characterized in that: When the first switch and the second switch are configured to support the same RF signal, the total number of the first harmonic processing units and the second harmonic processing units on the first switch is greater than the total number of the fifth harmonic processing units and the sixth harmonic processing units on the second switch.

25. The radio frequency module according to claim 23, characterized in that: When the first switch and the second switch are configured to support the same RF signal, an area of ​​the first harmonic processing unit and / or the second harmonic processing unit on the first switch is greater than an area of ​​the fifth harmonic processing unit and the sixth harmonic processing unit on the second switch.

26. The radio frequency module according to claim 23, characterized in that: A first end of the first switch is connected to the antenna port, a second end of the first switch is grounded, a first end of the second switch is connected to the antenna port, and a second end of the second switch is connected to the first filter.

27. The radio frequency module according to claim 23, characterized in that: A first end of the first switch is connected to the antenna port, a second end of the first switch is grounded, a first end of the second switch is connected to the first filter, and a second end of the second switch is connected to the amplifier.

28. A radio frequency module, characterized in that: The invention comprises a radio frequency front-end circuit, wherein the radio frequency front-end circuit comprises a second switch, wherein the second switch comprises a fifth switch branch, wherein the fifth switch branch comprises a first terminal, a second terminal, n switch units connected in series in sequence between the first terminal of the fifth switch branch and the second terminal of the fifth switch branch, n first resistors, wherein the n first resistors are connected in parallel with the n switch units one by one, at least one fifth harmonic processing unit and at least one sixth harmonic processing unit, wherein the first switch unit to the third switch unit starting from the first terminal of the fifth switch branch constitute a fifth switch network, and the switch unit from the n-2th switch unit to the nth switch unit constitute a sixth switch network, wherein n is greater than or equal to 6; wherein the fifth harmonic processing unit is connected to the fifth switch network, and the sixth harmonic processing unit is connected to the sixth switch network.

29. The radio frequency module according to claim 28, characterized in that: The second switch is connected in series in the radio frequency signal transmission path.

30. The radio frequency module according to claim 29, characterized in that: The second switch is an antenna switch, a first end of the antenna switch is connected to the antenna port, and a second end of the antenna switch is connected to the filter, or the second switch is a band selection switch, a first end of the band selection switch is connected to the filter, and a second end of the band selection switch is connected to the amplifier.

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