Packaging structure of three-phase power module, inverter circuit and motor driving system

Abstract

The invention provides a packaging structure of a three-phase power module, an inverter circuit and a motor driving system, which comprises low-side power supply ends and high-side floating power supply ends of three half-bridge driving chips, driving signal input ends of the three half-bridge driving chips are connected with corresponding pins, and driving signal output ends of the three half-bridge driving chips are connected with grid electrodes of corresponding half-bridge topological structures; the high-side floating ground end is connected with the output end of the corresponding half-bridge topological structure; the grounding end of each chip is connected with a common ground pin; the temperature sensing output end of the first chip and / or the temperature sensing output end of the second chip and the fault signal output end of the third chip are connected with the corresponding pins, and the overcurrent detection end of the third chip is connected with the negative end of the corresponding half-bridge topological structure. The positive end of each half-bridge topological structure is connected with a direct-current positive end pin, and the negative end and the output end of each half-bridge topological structure are connected with corresponding pins; the anodes of the three bootstrap diodes are connected with the corresponding low-side power supply ends, and the cathodes are connected with the corresponding high-side floating power supply ends. According to the invention, the chip can have more functions under the condition of keeping the packaging form unchanged, and the product application is expanded.

Description

Technical Field

[0001] The present invention relates to the field of motor control, and in particular to a packaging structure of a three-phase power module, an inverter circuit and a motor drive system. Background Art

[0002] Intelligent Power Module (IPM) is a product of the combination of microelectronics technology and power electronics technology. It is a common way to form a three-phase intelligent power module by sealing three half-bridge drive circuits and three corresponding groups of half-bridge topology power devices, as well as some peripheral circuits together, which is used to achieve low-voltage control of high voltage. Compared with traditional discrete device solutions, IPM is small in size, more integrated and reliable, and saves many peripheral PCB components. It is often used in variable frequency motor drive and various inverter power supplies. In addition to the basic driving function, IPM modules generally have a variety of protection functions, such as overcurrent detection, temperature sensing output, fault signal output, over-temperature protection, undervoltage protection, etc. Most packaging forms also need to be configured on the packaging pins to fully or partially meet these functions. SOP (DIP) -23H is one of the typical and universal IPM module packaging forms. The SOP (DIP) -23H packaging form includes 23 pins and the corresponding packaging frame. Due to the pin allocation and number, some functions cannot be realized, which limits the application of module functions.

[0003] Therefore, how to achieve more functions and expand product applications based on the existing packaging form has become one of the urgent problems to be solved by technical personnel in this field. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a packaging structure of a three-phase power module, an inverter circuit and a motor drive system, so as to solve the problems of single function and limited application of the intelligent power module in the prior art.

[0005] To achieve the above-mentioned object and other related objects, the present invention provides a packaging structure of a three-phase power module, wherein the packaging structure of the three-phase power module at least comprises:

[0006] Three half-bridge driver chips, three sets of half-bridge topologies and three bootstrap diodes;

[0007] Each half-bridge driver chip includes a driving unit, a temperature detection unit, a fault detection unit and an overcurrent detection unit; the low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side drive bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side drive bias voltage pin, the drive signal input terminal is respectively connected to the corresponding drive signal input pin, the drive signal output terminal is connected to the gate of the corresponding half-bridge topology structure, and the high-side floating ground terminal is respectively connected to the output terminal of the corresponding half-bridge topology structure; the ground terminal of each half-bridge driver chip is connected to the common ground pin; wherein the temperature sensing output terminal of the first half-bridge driver chip and / or the second half-bridge driver chip is connected to the corresponding temperature sensing output pin, the fault signal output terminal of the third half-bridge driver chip is connected to the fault signal output pin, and the overcurrent detection terminal of the third half-bridge driver chip is connected to the negative terminal of the corresponding half-bridge topology structure;

[0008] The positive end of each group of half-bridge topology structures is connected to the DC positive terminal pin, the negative end is connected to the corresponding DC negative terminal pin, and the output end is connected to the corresponding phase output pin;

[0009] The anodes of the respective bootstrap diodes are respectively connected to the low-side power supply terminals of the corresponding half-bridge driver chips, and the cathodes are respectively connected to the high-side floating power supply terminals of the corresponding half-bridge driver chips.

[0010] Optionally, the first half-bridge driver chip is a U-phase driver chip, the second half-bridge driver chip is a V-phase driver chip, and the third half-bridge driver chip is a W-phase driver chip.

[0011] Optionally, at least one of the first half-bridge driver chip, the second half-bridge driver chip and the third half-bridge driver chip also includes an over-temperature protection unit; the over-temperature protection unit receives the output signal of the temperature detection unit of the corresponding half-bridge driver chip, and shuts down the corresponding half-bridge driver chip when the detected temperature is greater than a preset value.

[0012] Optionally, the temperature sensing output terminal outputs a voltage signal; or the temperature sensing output terminal outputs a current signal, which is converted into a voltage signal through a first pull-up resistor.

[0013] Optionally, the fault signal output terminal of each half-bridge driver chip provides a reference voltage through a second pull-up resistor built into the chip or a second pull-up resistor external to the chip.

[0014] More optionally, each half-bridge driver chip is disposed on a common foundation island, a ground terminal of each half-bridge driver chip is connected to the common foundation island via a lead, and the common foundation island is connected to the common ground pin;

[0015] The bottom electrode of the first bootstrap diode is attached to the first power base island, the first power base island is connected to the first driving bias voltage pin, and the top electrode is connected to the second driving bias voltage pin through a lead; the bottom electrode of the second bootstrap diode is attached to the second power base island, the second power base island is connected to the third driving bias voltage pin, and the top electrode is connected to the fourth driving bias voltage pin through a lead; the bottom electrode of the third bootstrap diode is attached to the third power base island, the third power base island is connected to the fifth driving bias voltage pin, and the top electrode is connected to the sixth driving bias voltage pin through a lead; wherein the first driving bias voltage pin and the second driving bias voltage pin are respectively the low-side driving bias voltage pin and the high-side driving bias voltage pin of the corresponding half-bridge driving chip, the third driving bias voltage pin and the fourth driving bias voltage pin are respectively the low-side driving bias voltage pin and the high-side driving bias voltage pin of the corresponding half-bridge driving chip, and the fifth driving bias voltage pin and the sixth driving bias voltage pin are respectively the low-side driving bias voltage pin and the high-side driving bias voltage pin of the corresponding half-bridge driving chip;

[0016] The low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side driver bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side driver bias voltage pin, and the driver signal input terminal is respectively connected to the corresponding signal input pin through a lead wire;

[0017] The drain of the high-side power device of each half-bridge topology structure is attached to the DC positive terminal base island, and the source is connected to the corresponding phase output base island through a lead wire, and the DC positive terminal base island is connected to the DC positive terminal pin; the drain of the low-side power device of each half-bridge topology structure is attached to the corresponding phase output base island, and the source is connected to the corresponding DC negative terminal pin through a lead wire, and each phase output base island is connected to the corresponding phase output pin;

[0018] The driving signal output end of each half-bridge driving chip is connected to the gate of the corresponding half-bridge topology structure through a lead wire, and the high-side floating ground end is connected to the corresponding phase output base island through a lead wire;

[0019] Among them, the temperature sensing output end is connected to the corresponding temperature sensing output pin through a lead; the fault signal output end is connected to the fault signal output pin through a lead; the overcurrent detection end is connected to the transition base island through a lead, and the transition base island is further connected to the source of the low-side power device of the corresponding half-bridge topology structure through a lead.

[0020] More optionally, each bootstrap diode is integrated in a corresponding half-bridge driver chip.

[0021] More optionally, each half-bridge driver chip is disposed on a common foundation island, a ground terminal of each half-bridge driver chip is connected to the common foundation island via a lead, and the common foundation island is connected to the common ground pin;

[0022] The low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side driver bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side driver bias voltage pin, the drive signal input terminal is respectively connected to the corresponding signal input pin through a lead, and the ground terminal is connected to the common foundation island through a lead;

[0023] The drain of the high-side power device of each half-bridge topology structure is attached to the DC positive terminal base island, and the source is connected to the corresponding phase output base island through a lead wire, and the DC positive terminal base island is connected to the DC positive terminal pin; the drain of the low-side power device of each half-bridge topology structure is attached to the corresponding phase output base island, and the source is connected to the corresponding DC negative terminal pin through a lead wire, and each phase output base island is connected to the corresponding phase output pin;

[0024] The driving signal output end of each half-bridge driving chip is connected to the gate of the corresponding half-bridge topology structure through a lead wire, and the high-side floating ground end is connected to the corresponding phase output base island through a lead wire;

[0025] Among them, the temperature sensing output end is connected to the corresponding temperature sensing output pin through a lead; the fault signal output end is connected to the fault signal output pin through a lead; the overcurrent detection end is connected to the transition base island through a lead, and the transition base island is further connected to the source of the low-side power device of the corresponding half-bridge topology structure through a lead.

[0026] To achieve the above objectives and other related objectives, the present invention also provides an inverter circuit, which includes at least a three-phase power module; the three-phase power module adopts the packaging structure of the above three-phase power module and is used to convert direct current into alternating current.

[0027] In order to achieve the above-mentioned object and other related objects, the present invention further provides a motor drive system, the motor drive system at least comprising:

[0028] Motor, sampling module, MCU and three-phase power module;

[0029] The three-phase power module is connected to the motor and adopts the packaging structure of the three-phase power module to drive the motor;

[0030] The sampling module is connected to each half-bridge topology structure of the three-phase power module, and is used to sample each phase current of the motor;

[0031] The MCU is connected to the sampling module and generates a driving input signal of the three-phase power module based on a sampling signal.

[0032] As described above, the packaging structure of the three-phase power module, the inverter circuit and the motor drive system of the present invention have the following beneficial effects:

[0033] 1. The packaging structure, inverter circuit and motor drive system of the three-phase power module of the present invention can realize the basic driving function, and can also realize the functions of over-temperature protection, fault monitoring, over-current protection, under-voltage protection, etc. at the same time, with high integration and high reliability.

[0034] 2. The packaging structure, inverter circuit and motor drive system of the three-phase power module of the present invention add a transition base island as a springboard without changing the packaging form, and apply the overcurrent detection function of the driver chip by internal wiring without adding new pins. More functions can be expanded on the basis of maintaining the original packaging form, reducing the external PCB circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 Shown is a schematic diagram of the packaging structure of an intelligent power module.

[0036] Figure 2 Shown is a PAD schematic diagram of the half-bridge driver chip of the present invention.

[0037] Figure 3 Display as Figure 1 Schematic diagram of the lead frame of the intelligent power module.

[0038] Figure 4 A schematic structural diagram of the packaging structure of the three-phase power module of the present invention is shown.

[0039] Figure 5 Shown is a schematic structural diagram of a half-bridge driver chip of the present invention.

[0040] Figure 6 Shown is a schematic structural diagram of the drive unit of the present invention.

[0041] Figure 7 Display as Figure 4 Schematic diagram of the lead frame of the packaging structure of the three-phase power module.

[0042] Figure 8 Another structural schematic diagram showing the packaging structure of the three-phase power module of the present invention.

[0043] Fig. 9 Display as Figure 8 Schematic diagram of the lead frame of the packaging structure of the three-phase power module.

[0044] Fig.10 Shown is a schematic structural diagram of the motor drive system of the present invention.

[0045] Component number description

[0046] 1 Intelligent Power Module

[0047] 2 Packaging structure of three-phase power module

[0048] 21a First half-bridge driver chip

[0049] 21b Second half-bridge driver chip

[0050] 21c Third half-bridge driver chip

[0051] 211 Driver

[0052] 211a The first Schmitt trigger

[0053] 211b Delay Circuit

[0054] 211c First Buffer

[0055] 211d Second Schmitt trigger

[0056] 211e Pulse Generator

[0057] 211f level shift circuit

[0058] 211g Latch

[0059] 211h Second buffer

[0060] 212 Temperature detection unit

[0061] 213 Fault Detection Unit

[0062] 214 Overcurrent detection unit

[0063] 20 Three-phase power module

[0064] 22a First Half-Bridge Topology

[0065] 22b Second Half-Bridge Topology

[0066] 22c Third Half-Bridge Topology

[0067] 231 Public Foundation Island

[0068] 232 First Power Base Island

[0069] 233 Second Power Island

[0070] 234 The third power island

[0071] 235 DC positive terminal base island

[0072] 236 First phase output base island

[0073] 237 Second phase output base island

[0074] 238 Third phase output base island

[0075] 239 Transitional Island

[0076] 3 Motor

[0077] 4 Sampling Module

[0078] 5 MCU DETAILED DESCRIPTION

[0079] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0080] See also Figures 1 to 10 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0081] SOP (DIP) -23H is a typical package form of intelligent power module, such as Figure 1 As shown, the intelligent power module 1 includes three identical driver chips IC1, IC2, and IC3, two sets of half-bridge topology structures, and three bootstrap diodes D1, D2, and D3. Each driver chip includes 11 PADs, such as Figure 2 As shown, in addition to the input, output, power supply, and ground required for half-bridge driving, there are also temperature and current detection functions and corresponding error signal outputs. The description of each PAD is shown in Table 1 below:

[0082] PAD Name Functional Description VCC Low-side power supply HIN High-side drive signal input LIN Low-side drive signal input COM land FO Fault signal output VOT Temperature sensing output CSC Overcurrent detection LO High side drive signal output VS High side floating ground HO Low side drive signal output VB High-side floating supply

[0083] Table 1

[0084] like Figure 1 and Figure 3As shown, the PAD of each chip is connected to the corresponding frame pin through a metal bonding wire. Due to the limitation of the frame, it is impossible to lead out all the functions on the driver chip. Under the condition of ensuring the basic driving function (VCC, HIN, LIN, GND, LO, HO, VS, VB must be led out and the pin position is fixed), each driver chip can only selectively lead out one of the output ports such as FO and VOT; in this case, if the overcurrent protection function (CSC port) is introduced, an input and an output pin are required. Obviously, this cannot be achieved using this general framework. In this embodiment, the intelligent power module 1 leads out three temperature output ports VOT, and the 23 pins, names and function descriptions of the SOP (DIP)-23H lead frame are shown in Table 2 below:

[0085] Pinout symbol Function 1 COM Module common ground 2 V B U-phase high-side driver bias voltage 3 VCCU U phase low side driver bias voltage 4 INHU U-phase high-side drive signal input 5 INLU U-phase low-side drive signal input 6 VOT1 Temperature sensing output 7 VBV V phase high side driver bias voltage 8 VCCV V phase low side driver bias voltage 9 INH V-phase high-side drive signal input 10 INLV V-phase low-side drive signal input 11 VOT2 Temperature sensing output 12 VBW W phase high side driver bias voltage 13 VCC W phase low side driver bias voltage 14 INH W phase high side drive signal input 15 INLW W phase low side drive signal input 16 VOT3 Temperature sensing output 17 W, VSW W phase output, W phase high side driver power supply ground 18 NW W phase DC negative terminal 19 V,VSV V phase output, V phase high side driver power supply ground 20 NV V phase DC negative terminal 21 NU U phase DC negative terminal 22 U, VSU U phase output, U phase high side drive power supply ground 23 P DC positive terminal

[0086] Table 2

[0087] The layout of the above-mentioned packaging frame cannot expand more module functions due to the pins, and can only castrate some functions, resulting in limited module performance. Some protection functions need to be configured with external devices, which increases the complexity of the peripheral PCB circuits, increases costs, and is prone to interference problems, reducing chip integration and reliability.

[0088] In order to solve the above problems, the present invention proposes a new frame structure in the form of SOP (DIP)-23H package, which adds overcurrent protection and fault monitoring (including but not limited to undervoltage, overtemperature and other faults) while retaining the temperature output function, expands the module performance, improves the chip integration and reliability, and reduces the peripheral PCB cost. The specific scheme is as follows:

[0089] Embodiment 1

[0090] like Figure 4 As shown, this embodiment provides a packaging structure 2 of a three-phase power module, and the packaging structure 2 of the three-phase power module includes:

[0091] Three half-bridge driver chips (respectively recorded as the first half-bridge driver chip 21a, the second half-bridge driver chip 21b and the third half-bridge driver chip 21c), three sets of half-bridge topology structures (respectively recorded as the first half-bridge topology structure 22a, the second half-bridge topology structure 22b, the third half-bridge topology structure 22c) and three bootstrap diodes (respectively recorded as the first bootstrap diode D1, the second bootstrap diode D2 and the third bootstrap diode D3).

[0092] like Figure 5 As shown, each half-bridge driving chip 21 includes a driving unit 211 , a temperature detection unit 212 , a fault detection unit 213 and an overcurrent detection unit 214 .

[0093] Specifically, the high-side floating power supply terminal VB, the low-side power supply terminal VCC, the high-side floating ground terminal VS, the ground terminal COM, the drive signal input terminal (the high-side drive signal input terminal HIN and the low-side drive signal input terminal LIN) and the drive signal output terminal (the high-side drive signal output terminal HO and the low-side drive signal output terminal LO) of each drive unit 211 are respectively led out as chip PADs. The temperature sensing output terminal VOT of each temperature detection unit 212 is respectively led out as chip PADs; the fault signal output terminal FO of each fault detection unit 213 is respectively led out as chip PADs. The overcurrent detection terminal CSC of each overcurrent detection unit 214 is respectively led out as chip PADs.

[0094] More specifically, if Figure 6 As shown, as an example, each driving unit 211 includes a first Schmitt trigger 211a, a delay circuit 211b, a first buffer 211c, a second Schmitt trigger 211d, a pulse generator 211e, a level shift circuit 211f, a latch 211g and a second buffer 211h. The low-side drive input signal passes through the first Schmitt trigger 211a, the delay circuit 211b (compensating for the transmission delay of the high-side signal) and the first buffer 211c in sequence to generate a low-side drive output signal, wherein the high voltage of the low side is VCC and the low voltage is COM. The high-side drive input signal enters the pulse generator 211e after passing through the second Schmitt trigger 21d, and generates a pulse signal at the rising edge and falling edge of the high-side drive input signal; the level shifting circuit 211f converts the signal with COM as the reference ground into a signal with VS as the reference ground, the latch 211g latches the pulse signal transmitted from the level shifting circuit 211f, and amplifies the output signal of the latch 211g through the second Schmitt trigger 211d to obtain a high-side drive output signal.

[0095] It should be noted that any circuit structure that can realize driving, temperature detection, fault detection and overcurrent detection is applicable to the present invention and will not be described in detail here.

[0096] like Figure 5As shown, the low-side power supply terminal VCC of each half-bridge driver chip 21 is respectively connected to the corresponding low-side driver bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side driver bias voltage pin, the drive signal input terminal is respectively connected to the corresponding drive signal input pin, the drive output terminal is connected to the gate of the corresponding half-bridge topology structure (controlling the conduction state of each power device), and the high-side floating ground terminal is respectively connected to the output terminal of the corresponding half-bridge topology structure; the ground terminal of each half-bridge driver chip is connected to the common ground pin; wherein, the temperature sensing output terminal of the first half-bridge driver chip and / or the second half-bridge driver chip is connected to the corresponding temperature sensing output pin, the fault signal output terminal of the third half-bridge driver chip is connected to the fault signal output pin, and the overcurrent detection terminal of the third half-bridge driver chip is connected to the negative terminal of the corresponding half-bridge topology structure.

[0097] Specifically, in the present embodiment, the first half-bridge driver chip 21a is a U-phase driver chip, the second half-bridge driver chip 21b is a V-phase driver chip, and the third half-bridge driver chip 21c is a W-phase driver chip. The ground terminal COM of each half-bridge driver chip is connected to the common ground pin COM. The high-side floating power supply terminal VB of the first half-bridge driver chip 21a is connected to the first high-side drive bias voltage pin VBU, the low-side power supply terminal VCC is connected to the first low-side drive bias voltage pin VCCU, the high-side drive signal input terminal HIN is connected to the first high-side drive signal input pin INHU, the low-side drive signal input terminal LIN is connected to the first low-side drive signal input pin INLU, the high-side drive signal output terminal HO is connected to the gate of the high-side power device Q1H in the first half-bridge topology structure 22a, the low-side drive signal output terminal LO is connected to the gate of the low-side power device Q1L in the first half-bridge topology structure 22a, and the high-side floating ground terminal VS is connected to the output terminal of the first half-bridge topology structure 22a (i.e., the source of the high-side power device and the drain of the low-side power device). Similarly, the high-side floating power supply terminal VB of the second half-bridge driver chip 21b is connected to the second high-side drive bias voltage pin VBV, the low-side power supply terminal VCC is connected to the second low-side drive bias voltage pin VCCV, the high-side drive signal input terminal HIN is connected to the second high-side drive signal input pin INHV, the low-side drive signal input terminal LIN is connected to the second low-side drive signal input pin INLV, the high-side drive signal output terminal HO is connected to the gate of the high-side power device Q2H in the second half-bridge topology structure 22b, the low-side drive signal output terminal LO is connected to the gate of the low-side power device Q2L in the second half-bridge topology structure 22b, and the high-side floating ground terminal VS is connected to the output terminal of the second half-bridge topology structure 22b. The high-side floating power supply terminal VB of the third half-bridge driver chip 21c is connected to the third high-side drive bias voltage pin VBW, the low-side power supply terminal VCC is connected to the third low-side drive bias voltage pin VCCW, the high-side drive signal input terminal HIN is connected to the third high-side drive signal input pin INHW, the low-side drive signal input terminal LIN is connected to the third low-side drive signal input pin INLW, the high-side drive signal output terminal HO is connected to the gate of the high-side power device Q3H in the third half-bridge topology structure 22c, the low-side drive signal output terminal LO is connected to the gate of the low-side power device Q3L in the third half-bridge topology structure 22c, and the high-side floating ground terminal VS is connected to the output end of the third half-bridge topology structure 22c. Among them, the temperature sensing output terminals VOT of the first half-bridge driver chip 21a and the second half-bridge driver chip 21b are respectively connected to the first temperature sensing output pin VOT1 and the second temperature sensing output pin VOT2; the fault signal output terminal FO of the third half-bridge driver chip 21c is connected to the fault signal output pin FO, and the overcurrent detection terminal CSC is connected to the negative end of the third half-bridge topology structure 22c.

[0098] It should be noted that, based on the current market usage habits, in this embodiment, the fault signal is generated by the half-bridge driver chip corresponding to W. In actual use, the half-bridge driver chip corresponding to U phase or V can also be used to generate a fault signal, which is not limited to this embodiment. In this embodiment, the temperature sensing output terminal VOT of the half-bridge driver chip corresponding to U phase and V is output (in this example, the three corresponding half-bridge driver chips of U, V, and W are arranged from top to bottom, and the top and middle temperatures of the packaging structure of the three-phase power module of the present invention are detected); in actual use, the temperature sensing output terminal of any corresponding half-bridge driver chip can be output (it can also be W phase). At this time, temperature sensing only occupies one pin, and the other reserved pin can be wired to different ports as needed to achieve different functions (for example, the reserved pin is connected to the fault signal output terminal FO or connected to the ground terminal COM, which is not repeated here). In other words, the correspondence between the three phases of U, V, and W and the first, second, and third half-bridge driver chips can be set according to actual needs, which is not limited to this embodiment. In order to be as close to the original SOP (DIP) -23H packaging structure as possible, the fault signal and temperature detection signal are generated by different half-bridge driver chips; in actual use, the fault signal and temperature detection signal can also be generated by the same half-bridge driver chip (corresponding pins are multiplexed), which is not limited to this embodiment. Similarly, in order to make the most of the original SOP (DIP) -23H framework structure, the overcurrent detection function is realized by the third half-bridge driver chip 21c; in actual use, the overcurrent detection function can also be realized by the first half-bridge driver chip or the second half-bridge driver chip, which is not limited to this embodiment.

[0099] As another implementation of the present invention, at least one of the first half-bridge driver chip 21a, the second half-bridge driver chip 21b and the third half-bridge driver chip 21c further includes an over-temperature protection unit. The over-temperature protection unit receives the output signal of the temperature detection unit of the corresponding half-bridge driver chip, and turns off the corresponding half-bridge driver chip when the detected temperature is greater than a preset value. Specifically, taking the over-temperature protection unit provided in the first half-bridge driver chip 21a as an example, the output signal of the temperature detection unit 212 is provided to the temperature sensing output terminal VOT to implement over-temperature protection through the MCU; at the same time, the output signal of the temperature detection unit 212 is also provided to the over-temperature protection unit, and the over-temperature protection unit compares and judges the output signal of the temperature detection unit 212 through a comparator, and generates an effective over-temperature protection signal when over-temperature occurs (as an example, the internal enable signal of the first half-bridge driver chip 21a is pulled down when the over-temperature protection signal is effective) to turn off the first half-bridge driver chip 21a; double over-temperature protection is implemented. In actual use, an over-temperature protection unit may be provided in all three half-bridge driver chips, or in any two or any one of them, and the configuration is based on actual needs, which will not be described in detail here.

[0100] As another implementation of the present invention, the temperature sensing output terminal VOT outputs a voltage signal; or the temperature sensing output terminal VOT outputs a current signal, and is converted into a voltage signal through a first pull-up resistor (not shown in the figure). Specifically, as an example, the temperature sensing output terminal VOT of each half-bridge driver chip directly outputs a voltage signal and provides it to the corresponding temperature sensing output pin. As another example, the temperature sensing output terminal VOT of each half-bridge driver chip outputs a current signal, and a first pull-up resistor is provided outside each chip, and the current signal is converted into a voltage signal by the first pull-up resistor. It should be noted that the first pull-up resistor can be arranged inside the packaging structure 2 of the three-phase power module, and can also be arranged outside the packaging structure 2 of the three-phase power module.

[0101] As another implementation of the present invention, the fault signal output terminal FO of each half-bridge driver chip provides a reference voltage through a second pull-up resistor built into the chip or a second pull-up resistor external to the chip (not shown in the figure). Specifically, as an example, the fault detection module 213 of each half-bridge driver chip provides a reference voltage through a second pull-up resistor inside the chip; when no fault is detected, the fault signal output terminal FO maintains a high level (reference voltage), and when a fault occurs, the pull-down tube of the fault signal output terminal FO is turned on and pulled down to a low level, providing a fault signal to the outside (such as MCU). As another example, the fault detection module 213 of each half-bridge driver chip provides a reference voltage through a second pull-up resistor outside the chip, and the peripheral circuit becomes complicated relative to the first example; the pull-down tube inside the chip is in an open-drain state, and the fault signal output terminal FO is connected to a high level (reference voltage) through an external second pull-up resistor. Similarly, when no fault is detected, it maintains a high level, and when a fault is detected, it jumps to a low level. It should be noted that the second pull-up resistor of the fault signal output terminal FO of each half-bridge driver chip can be set inside or outside the chip as needed, without having to maintain a consistent structure; the second pull-up resistor can be set inside the packaging structure 2 of the three-phase power module, or outside the packaging structure 2 of the three-phase power module.

[0102] like Figure 4 As shown, the positive end of each group of half-bridge topology structures is connected to the DC positive terminal pin, the negative end is connected to the corresponding DC negative terminal pin, and the output end is connected to the corresponding phase output pin.

[0103] Specifically, each half-bridge topology structure includes a high-side power device and a low-side power device, wherein the drain of the high-side power device serves as the positive end of the half-bridge topology structure, the source of the low-side power device serves as the negative end of the half-bridge topology structure, and the source of the high-side power device is connected to the drain of the low-side power device as the output end of the half-bridge topology structure. The positive end of each half-bridge topology structure is connected to the DC positive end pin P; the negative end of the first half-bridge topology structure 22a is connected to the first DC negative end pin NU, the negative end of the second half-bridge topology structure 22b is connected to the second DC negative end pin NV, and the negative end of the third half-bridge topology structure 22c is connected to the third DC negative end pin NW; the output end of the first half-bridge topology structure 22a is connected to the first phase output pin U (VSU), the output end of the second half-bridge topology structure 22b is connected to the second phase output pin V (VSV), and the output end of the third half-bridge topology structure 22c is connected to the third phase output pin W (VSW); each phase output signal is a periodically changing signal used to drive a motor or other device.

[0104] like Figure 4As shown, the anodes of the respective diodes are connected to the low-side power supply terminal VCC of the corresponding half-bridge driver chip, and the cathodes are connected to the high-side floating power supply terminal VB of the corresponding half-bridge driver chip.

[0105] Specifically, each bootstrap diode is used to charge the bootstrap capacitor in the peripheral circuit when the low-side power device is turned on, so as to achieve control of the high-side power device. The specific principles are not described here one by one.

[0106] The internal frame of the packaging structure of the three-phase power module of this embodiment can be set as needed, and each device maintains a relatively safe distance and gap, and the interconnection control function is realized through bonding wires; in this example, the internal frame uses the frame of the SOP (DIP)-23H packaging form to the greatest extent. Figure 7 As shown, the packaging structure 2 of the three-phase power module includes a common ground base island 231, a first power base island 232, a second power base island 233, a third power base island 234, a DC positive terminal base island 235, a first phase output base island 236, a second phase output base island 237, a third phase output base island 238, and a transition base island 239 (there is a safety gap between each base island), a common ground pin COM, a first high-side drive bias voltage pin VBU, a first low-side drive bias voltage pin VCCU, a second high-side drive bias voltage pin VBV, a second low-side drive bias voltage pin VCCV, a third high-side drive bias voltage pin VBW, and a third low-side drive bias voltage pin VCCV. A voltage pin VCCW, a first high-side drive signal input pin INHU, a first low-side drive signal input pin INLU, a second high-side drive signal input pin INHV, a second low-side drive signal input pin INLV, a third high-side drive signal input pin INHW, a third low-side drive signal input pin INLW, a first temperature sensing output pin VOT1, a second temperature sensing output pin VOT2, a fault signal output pin FO, a DC positive terminal pin P, a first phase output pin U, a second phase output pin V, a third phase output pin W, a first DC negative terminal pin NU, a second DC negative terminal pin NV, and a third DC negative terminal pin NW.

[0107] Specifically, the first half-bridge driver chip 21a, the second half-bridge driver chip 21b and the third half-bridge driver chip 21c are arranged on the common foundation island 231, and the ground terminal COM of each half-bridge driver chip is connected to the common foundation island 231 through a lead, and the common foundation island 231 is connected to the common ground pin COM.

[0108] Specifically, the bottom electrode of the first bootstrap diode D1 is attached to the first power base island 232, the first power base island 232 is connected to the first driving bias voltage pin, and the top electrode is connected to the second driving bias voltage pin through a lead. The bottom electrode of the second bootstrap diode D2 is attached to the second power base island 233, the second power base island 233 is connected to the third driving bias voltage pin, and the top electrode is connected to the fourth driving bias voltage pin through a lead. The bottom electrode of the third bootstrap diode D3 is attached to the third power base island 234, the third power base island 234 is connected to the fifth driving bias voltage pin, and the top electrode is connected to the sixth driving bias voltage pin through a lead. Among them, the first drive bias voltage pin and the second drive bias voltage pin are respectively the low-side drive bias voltage pin and the high-side drive bias voltage pin of the corresponding half-bridge driver chip, the third drive bias voltage pin and the fourth drive bias voltage pin are respectively the low-side drive bias voltage pin and the high-side drive bias voltage pin of the corresponding half-bridge driver chip, and the fifth drive bias voltage pin and the sixth drive bias voltage pin are respectively the low-side drive bias voltage pin and the high-side drive bias voltage pin of the corresponding half-bridge driver chip. In the present embodiment, the bottom electrode of each enumerated diode is a cathode, and the top electrode is an anode; therefore, the first drive bias voltage pin is a high-side drive bias voltage pin corresponding to U (i.e., the first high-side drive bias voltage pin VBU), and the second drive bias voltage pin is respectively a low-side drive bias voltage pin corresponding to U (i.e., the first low-side drive bias voltage pin VCCU); the third drive bias voltage pin is a high-side drive bias voltage pin corresponding to V (i.e., the second high-side drive bias voltage pin VBV), and the fourth drive bias voltage pin is respectively a low-side drive bias voltage pin corresponding to V (i.e., the second low-side drive bias voltage pin VCCV); the fifth drive bias voltage pin is a high-side drive bias voltage pin corresponding to W (i.e., the third high-side drive bias voltage pin VBW), and the sixth drive bias voltage pin is respectively a low-side drive bias voltage pin corresponding to W (i.e., the third low-side drive bias voltage pin VCCW). In actual use, the positive cathode of each enumerated diode can be interchangeably arranged, and the high and low sides of the corresponding drive bias voltage pins are also interchangeably arranged, which will not be repeated here.

[0109] Specifically, the low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side drive bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side drive bias voltage pin, and the drive input terminal is respectively connected to the corresponding signal input pin through a lead. In this embodiment, the high-side floating power supply terminal VB of the first half-bridge driver chip 21a is connected to the first power base island 232 through a lead, and then electrically connected to the first high-side drive bias voltage pin VBU; the low-side power supply terminal VCC of the first half-bridge driver chip 21a is connected to the first low-side drive bias voltage pin VCCU through a lead. The high-side floating power supply terminal VB of the second half-bridge driver chip 21b is connected to the second power base island 233 through a lead, and then electrically connected to the second high-side drive bias voltage pin VBV; the low-side power supply terminal VCC of the second half-bridge driver chip 21b is connected to the second low-side drive bias voltage pin VCCV through a lead. The high-side floating power supply terminal VB of the third half-bridge driver chip 21c is connected to the third power base island 234 through a lead, and then electrically connected to the third high-side drive bias voltage pin VBW; the low-side power supply terminal VCC of the third half-bridge driver chip 21c is connected to the third low-side drive bias voltage pin VCCW through a lead.

[0110] Specifically, the drain of the high-side power device of each half-bridge topology is attached to the DC positive end base island 235, and the bottom electrode of each high-side power device is the drain, which is directly attached to the DC positive end base island 235 through a conductive adhesive to achieve electrical connection with the DC positive end base island 235; the DC positive end base island 235 is connected to the DC positive end pin P. The source of the high-side power device of each half-bridge topology is connected to the corresponding phase output base island through a lead wire respectively; in this embodiment, the source of the high-side power device Q1H of the first half-bridge topology 22a is connected to the first output base island 236 through a lead wire; the source of the high-side power device Q2H of the second half-bridge topology 22b is connected to the second output base island 237 through a lead wire; the source of the high-side power device Q3H of the third half-bridge topology 22c is connected to the third output base island 237 through a lead wire. The drain of the low-side power device of each half-bridge topology is respectively attached to the corresponding phase output base island, each phase output base island is connected to the corresponding phase output pin, and the source of the low-side power device of each half-bridge topology is respectively connected to the corresponding DC negative terminal pin through a lead wire; in this embodiment, the drain of the low-side power device Q1L of the first half-bridge topology 22a is attached to the first phase output base island 236 through a conductive adhesive, the first phase output base island 236 is connected to the first phase output pin U, and the source is connected to the first DC negative terminal pin NU through a lead wire; the first The drain of the low-side power device Q2L of the second half-bridge topology structure 22b is arranged on the second phase output base island 237 through a conductive adhesive, the second phase output base island 237 is connected to the second phase output pin V, and the source is connected to the second DC negative terminal pin NV through a lead; the drain of the low-side power device Q3L of the third half-bridge topology structure 22c is arranged on the third phase output base island 238 through a conductive adhesive, the first phase output base island 238 is connected to the third phase output pin W, and the source is connected to the third DC negative terminal pin NW through a lead.

[0111] Specifically, the driving signal output terminal of each half-bridge driver chip is connected to the gate of the corresponding half-bridge topology structure through a lead wire. The high-side floating ground terminal VS of each half-bridge driver chip is connected to the corresponding phase output base island through a lead wire; in this embodiment, the high-side floating ground terminal VS of the first half-bridge driver chip 21a is connected to the first phase output base island 236 through a lead wire; the high-side floating ground terminal VS of the second half-bridge driver chip 21b is connected to the second phase output base island 237 through a lead wire; the high-side floating ground terminal VS of the third half-bridge driver chip 21c is connected to the third phase output base island 238 through a lead wire.

[0112] Specifically, the temperature sensing output terminal is connected to the corresponding temperature sensing output pin through a lead. In this embodiment, the temperature sensing output terminal VOT of the first half-bridge driver chip 21a is connected to the first temperature sensing output pin VOT1 through a lead, and the temperature sensing output terminal VOT of the second half-bridge driver chip 21b is connected to the second temperature sensing output pin VOT2 through a lead. The fault signal output terminal FO of the third half-bridge driver chip 21c is connected to the fault signal output pin FO through a lead. The overcurrent detection terminal CSC of the third half-bridge driver chip 21c is connected to the transition base island 239 through a lead, and the transition base island 239 is further connected to the source of the low-side power device Q3L of the third half-bridge topology structure 22c through a lead.

[0113] The present invention uses the newly added transition base island 239 as a springboard, and can apply the overcurrent detection function of the driver chip by internal wiring without adding new pins. It can expand more functions (simultaneously realize temperature detection, fault detection, overcurrent detection, and undervoltage protection) while maintaining the original packaging form, reducing external PCB circuits and having higher integration reliability.

[0114] Embodiment 2

[0115] like Figure 8 As shown, this embodiment provides a packaging structure 2 of a three-phase power module, which is different from the first embodiment in that each of the diodes is integrated in the corresponding half-bridge driver chip, and the pin configuration remains unchanged.

[0116] Accordingly, the lead frame is adjusted, as an example, Fig. 9 As shown, the lead frame of embodiment 1 is adopted. In this case, no bootstrap diode is set on each power base island, which is only used for conduction (equivalent to a pin). As another example, no power base island is set, and the low-side power supply terminal and the high-side floating power supply terminal of each half-bridge driver chip are directly connected to the corresponding pin through leads. These are not described one by one here.

[0117] Embodiment 3

[0118] This embodiment provides an inverter circuit, which includes a three-phase power module; the three-phase power module adopts the packaging structure of the three-phase power module of Embodiment 1 or Embodiment 2, and is used to convert direct current Vbus into alternating current (i.e., the output signal of each half-bridge topology structure), which will not be described in detail here.

[0119] Embodiment 4

[0120] like Fig.10 As shown, this embodiment provides a motor drive system, and the motor drive system includes:

[0121] Motor 3 , sampling module 4 , MCU 5 and three-phase power module 20 .

[0122] like Fig.10 As shown, the three-phase power module 20 is connected to the motor 3 and adopts the packaging structure of the three-phase power module of the first embodiment or the second embodiment to drive the motor 3.

[0123] like Fig.10 As shown, the sampling module 4 is connected to each half-bridge topology of the three-phase power module 20, and is used to sample each phase current of the motor. As an example, the sampling module 4 includes three sampling resistors, one end of each sampling resistor is respectively connected to the source of each low-side power device (i.e., each DC negative terminal pin), and the other end is grounded.

[0124] like Fig.10 As shown, the MCU5 is connected to the sampling module 4 and generates a driving input signal of the three-phase power module 20 based on the sampling signal.

[0125] In summary, the present invention provides a packaging structure of a three-phase power module, an inverter circuit and a motor drive system, including: three half-bridge drive chips, three groups of half-bridge topological structures and three bootstrap diodes; each half-bridge drive chip includes a drive unit, a temperature detection unit, a fault detection unit and an overcurrent detection unit; the low-side power supply end of each half-bridge drive chip is respectively connected to the corresponding low-side drive bias voltage pin, the high-side floating power supply end is respectively connected to the corresponding high-side drive bias voltage pin, the drive signal input end is respectively connected to the corresponding drive signal input pin, the drive signal output end is connected to the gate of the corresponding half-bridge topological structure, and the high-side floating ground end is respectively connected to the output end of the corresponding half-bridge topological structure; The grounding terminal of each half-bridge driver chip is connected to a common ground pin; wherein, the temperature sensing output terminal of the first half-bridge driver chip and / or the second half-bridge driver chip is connected to the corresponding temperature sensing output pin, the fault signal output terminal of the third half-bridge driver chip is connected to the fault signal output pin, and the overcurrent detection terminal of the third half-bridge driver chip is connected to the negative terminal of the corresponding half-bridge topology structure; the positive terminal of each group of half-bridge topology structures is connected to the DC positive terminal pin, the negative terminal is respectively connected to the corresponding DC negative terminal pin, and the output terminal is respectively connected to the corresponding phase output pin; the anode of each diode is respectively connected to the low-side power supply terminal of the corresponding half-bridge driver chip, and the cathode is respectively connected to the high-side floating power supply terminal of the corresponding half-bridge driver chip. The present invention improves the SOP (DIP)-23H packaging frame and wiring method, so that the chip can have more functions while keeping the packaging form unchanged, and expands product applications. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0126] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A packaging structure of a three-phase power module, characterized in that: The packaging structure of the three-phase power module at least includes: Three half-bridge driver chips, three sets of half-bridge topologies and three bootstrap diodes; Each half-bridge driver chip includes a driving unit, a temperature detection unit, a fault detection unit and an overcurrent detection unit; the low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side drive bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side drive bias voltage pin, the drive signal input terminal is respectively connected to the corresponding drive signal input pin, the drive signal output terminal is connected to the gate of the corresponding half-bridge topology structure, and the high-side floating ground terminal is respectively connected to the output terminal of the corresponding half-bridge topology structure; the ground terminal of each half-bridge driver chip is connected to the common ground pin; wherein the temperature sensing output terminal of the first half-bridge driver chip and / or the second half-bridge driver chip is connected to the corresponding temperature sensing output pin, the fault signal output terminal of the third half-bridge driver chip is connected to the fault signal output pin, and the overcurrent detection terminal of the third half-bridge driver chip is connected to the negative terminal of the corresponding half-bridge topology structure; The positive end of each group of half-bridge topology structures is connected to the DC positive terminal pin, the negative end is connected to the corresponding DC negative terminal pin, and the output end is connected to the corresponding phase output pin; The anodes of the respective bootstrap diodes are respectively connected to the low-side power supply terminals of the corresponding half-bridge driver chips, and the cathodes are respectively connected to the high-side floating power supply terminals of the corresponding half-bridge driver chips.

2. The packaging structure of the three-phase power module according to claim 1, characterized in that: The first half-bridge driving chip is a U-phase driving chip, the second half-bridge driving chip is a V-phase driving chip, and the third half-bridge driving chip is a W-phase driving chip.

3. The packaging structure of the three-phase power module according to claim 1, characterized in that: At least one of the first half-bridge driver chip, the second half-bridge driver chip and the third half-bridge driver chip also includes an over-temperature protection unit; the over-temperature protection unit receives an output signal of a temperature detection unit of the corresponding half-bridge driver chip, and shuts down the corresponding half-bridge driver chip when the detected temperature is greater than a preset value.

4. The packaging structure of the three-phase power module according to claim 1, characterized in that: The temperature sensing output terminal outputs a voltage signal; or the temperature sensing output terminal outputs a current signal, which is converted into a voltage signal through a first pull-up resistor.

5. The packaging structure of the three-phase power module according to claim 1, characterized in that: The fault signal output end of each half-bridge driving chip provides a reference voltage through a second pull-up resistor built into the chip or a second pull-up resistor external to the chip.

6. The packaging structure of the three-phase power module according to any one of claims 1 to 5, characterized in that: Each half-bridge driver chip is arranged on a common foundation island, a ground terminal of each half-bridge driver chip is connected to the common foundation island through a lead, and the common foundation island is connected to the common ground pin; The bottom electrode of the first bootstrap diode is attached to the first power base island, the first power base island is connected to the first driving bias voltage pin, and the top electrode is connected to the second driving bias voltage pin through a lead; The bottom electrode of the second bootstrap diode is attached to the second power base island, the second power base island is connected to the third drive bias voltage pin, and the top electrode is connected to the fourth drive bias voltage pin through a lead; the bottom electrode of the third bootstrap diode is attached to the third power base island, the third power base island is connected to the fifth drive bias voltage pin, and the top electrode is connected to the sixth drive bias voltage pin through a lead; wherein the first drive bias voltage pin and the second drive bias voltage pin are respectively the low-side drive bias voltage pin and the high-side drive bias voltage pin of the corresponding half-bridge driver chip, the third drive bias voltage pin and the fourth drive bias voltage pin are respectively the low-side drive bias voltage pin and the high-side drive bias voltage pin of the corresponding half-bridge driver chip, and the fifth drive bias voltage pin and the sixth drive bias voltage pin are respectively the low-side drive bias voltage pin and the high-side drive bias voltage pin of the corresponding half-bridge driver chip; The low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side driver bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side driver bias voltage pin, and the driver signal input terminal is respectively connected to the corresponding signal input pin through a lead wire; The drain of the high-side power device of each half-bridge topology structure is attached to the DC positive terminal base island, and the source is connected to the corresponding phase output base island through a lead wire, and the DC positive terminal base island is connected to the DC positive terminal pin; the drain of the low-side power device of each half-bridge topology structure is attached to the corresponding phase output base island, and the source is connected to the corresponding DC negative terminal pin through a lead wire, and each phase output base island is connected to the corresponding phase output pin; The driving signal output end of each half-bridge driving chip is connected to the gate of the corresponding half-bridge topology structure through a lead wire, and the high-side floating ground end is connected to the corresponding phase output base island through a lead wire; Among them, the temperature sensing output end is connected to the corresponding temperature sensing output pin through a lead; the fault signal output end is connected to the fault signal output pin through a lead; the overcurrent detection end is connected to the transition base island through a lead, and the transition base island is further connected to the source of the low-side power device of the corresponding half-bridge topology structure through a lead.

7. The packaging structure of the three-phase power module according to claims 1-5, characterized in that: Each boot diode is integrated in the corresponding half-bridge driver chip.

8. The packaging structure of the three-phase power module according to claim 7, characterized in that: Each half-bridge driver chip is arranged on a common foundation island, a ground terminal of each half-bridge driver chip is connected to the common foundation island through a lead, and the common foundation island is connected to the common ground pin; The low-side power supply terminal of each half-bridge driver chip is respectively connected to the corresponding low-side driver bias voltage pin, the high-side floating power supply terminal is respectively connected to the corresponding high-side driver bias voltage pin, the drive signal input terminal is respectively connected to the corresponding signal input pin through a lead, and the ground terminal is connected to the common foundation island through a lead; The drain of the high-side power device of each half-bridge topology structure is attached to the DC positive terminal base island, and the source is connected to the corresponding phase output base island through a lead wire, and the DC positive terminal base island is connected to the DC positive terminal pin; The drain of the low-side power device of each half-bridge topology structure is respectively attached to the corresponding phase output base island, the source is respectively connected to the corresponding DC negative terminal pin through a lead, and each phase output base island is connected to the corresponding phase output pin; The driving signal output end of each half-bridge driving chip is connected to the gate of the corresponding half-bridge topology structure through a lead wire, and the high-side floating ground end is connected to the corresponding phase output base island through a lead wire; Among them, the temperature sensing output end is connected to the corresponding temperature sensing output pin through a lead; the fault signal output end is connected to the fault signal output pin through a lead; the overcurrent detection end is connected to the transition base island through a lead, and the transition base island is further connected to the source of the low-side power device of the corresponding half-bridge topology structure through a lead.

9. An inverter circuit, characterized in that: The inverter circuit includes at least a three-phase power module; the three-phase power module adopts the packaging structure of the three-phase power module as described in any one of claims 1-8, and is used to convert direct current into alternating current.

10. A motor drive system, characterized in that: The motor drive system at least comprises: Motor, sampling module, MCU and three-phase power module; The three-phase power module is connected to the motor and adopts the packaging structure of the three-phase power module according to any one of claims 1 to 8, and is used to drive the motor; The sampling module is connected to each half-bridge topology structure of the three-phase power module, and is used to sample each phase current of the motor; The MCU is connected to the sampling module and generates a driving input signal of the three-phase power module based on a sampling signal.

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