Mask and manufacturing method thereof

Abstract

The invention discloses a mask plate and a manufacturing method thereof, and the mask plate comprises a substrate, a plurality of discrete shading structures located on the substrate, and a light-transmitting region located between two adjacent shading structures, wherein the light shielding structure at least comprises a first light shielding structure and a second light shielding structure which are different in light transmittance, and at least one of the first light shielding structure and the second light shielding structure is made of a phase shift material with the light transmittance larger than 0. And a 180-degree phase difference is formed between an emergent light beam penetrating through the position, where the phase shift material is arranged, of the substrate and an emergent light beam penetrating through the light-transmitting area.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing, and in particular to a mask and a manufacturing method thereof. Background Art

[0002] In semiconductor manufacturing, photolithography is required to transfer the pattern of the mask to the wafer. The mask usually includes a transparent substrate and a light shielding structure on the transparent substrate. The light shielding structure blocks or transmits light to achieve the transfer of the pattern on the mask.

[0003] However, different patterns often have different requirements for the transmittance of the shading structure. The shading structure on the existing mask is made of the same material, and it is impossible to take into account the transmittance requirements of multiple patterns on the shading structure. It is often necessary to use one mask to transfer multiple patterns, or to use multiple masks for multiple pattern transfers. This will reduce the performance of the semiconductor structure, affect the product yield, or increase the process steps and costs. Summary of the invention

[0004] The present disclosure provides a mask, comprising:

[0005] A substrate, a plurality of discrete light-shielding structures located on the substrate, and a light-transmitting area located between two adjacent light-shielding structures; wherein,

[0006] The shading structure includes at least a first shading structure and a second shading structure with different transmittances, and the material of at least one of the first shading structure and the second shading structure includes a phase-shift material with a transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shift material is provided on the substrate and the outgoing light beam passing through the light-transmitting area.

[0007] In some embodiments, materials of the first light-shielding structure and the second light-shielding structure both include phase-shift materials with a light transmittance greater than 0.

[0008] In some embodiments, the light shading structure also includes: a third light shading structure, the transmittance of the third light shading structure is different from the transmittance of the first light shading structure and the second light shading structure; wherein the transmittance of one of the first light shading structure, the second light shading structure and the third light shading structure is 0, or the materials of the first light shading structure, the second light shading structure and the third light shading structure are all phase shift materials.

[0009] In some embodiments, a material of one of the first light-shielding structure and the second light-shielding structure includes a phase-shift material with a light transmittance greater than 0, and a material of the other light-shielding structure has a light transmittance of 0.

[0010] In some embodiments, the mask further includes: an etch stop layer covering the surface of the substrate, and the plurality of light shielding structures are located on the etch stop layer.

[0011] In some embodiments, the light transmittance of the etch stop layer ranges from 80% to 100%.

[0012] In some embodiments, the mask further includes: a shielding structure, which is disposed along an edge of the substrate and covers at least a portion of the light shielding structure disposed along the edge of the substrate and whose material includes a phase-shifting material.

[0013] The present disclosure also provides a method for manufacturing a mask, comprising:

[0014] providing a substrate;

[0015] A plurality of discrete shading structures are formed on the substrate, and an area between adjacent shading structures is defined as a light-transmitting area; wherein the shading structure comprises at least a first shading structure and a second shading structure with different transmittances, a material of at least one of the first shading structure and the second shading structure comprises a phase-shift material with a transmittance greater than 0, and an outgoing light beam passing through a position on the substrate where the phase-shift material is provided has a phase difference of 180° with an outgoing light beam passing through the light-transmitting area.

[0016] In some embodiments, the substrate includes a first region and a second region; a plurality of discrete light shielding structures are formed on the substrate, including:

[0017] forming a first light-shielding material layer on the substrate;

[0018] Etching the first light-shielding material layer to form the first light-shielding structure on the first region;

[0019] forming a first protective layer, wherein the first protective layer covers the substrate and the first light shielding structure located in the first area and exposes the second area;

[0020] forming a second light-shielding material layer, wherein the second light-shielding material layer covers the substrate located in the second area and the first protective layer located in the first area;

[0021] The second light-shielding material layer is etched to form the second light-shielding structure on the second region.

[0022] In some embodiments, the substrate further includes a third region; forming a plurality of discrete light shielding structures on the substrate further includes:

[0023] forming a second protective layer, wherein the second protective layer covers the substrate located in the first region and the second region and the first light shielding structure and the second light shielding structure, and exposes the third region;

[0024] forming a third light-shielding material layer, the third light-shielding material layer covering the third region and the first protective layer located in the first region and the second region; wherein the light transmittance of the third light-shielding material layer is different from the light transmittance of the first light-shielding structure and the second light-shielding structure;

[0025] The third light-shielding material layer is etched to form a third light-shielding structure in the third region.

[0026] In some embodiments, before forming a plurality of light-shielding structures on the substrate, the method further includes: forming an etch stop layer on the substrate, wherein the light-shielding structures are formed on the etch stop layer.

[0027] In some embodiments, part of the light shielding structure is arranged along the edge of the substrate, and the material of the light shielding structure arranged along the edge of the substrate includes a phase shift material with a transmittance greater than 0; after forming a plurality of discrete light shielding structures on the substrate, the method further includes:

[0028] forming a shielding material layer, wherein the shielding material layer covers the light shielding structure and the light-transmitting area;

[0029] The shielding material layer located in the middle area of ​​the substrate is removed to form a shielding structure, which is arranged along the edge of the substrate and covers at least a portion of the light shielding structure located in the edge area of ​​the substrate.

[0030] In some embodiments, the first region includes an edge region of the substrate, a portion of the first light-shielding structure covers the edge region of the substrate, and a material of the first light-shielding structure includes a phase-shift material with a transmittance greater than 0; after forming a first light-shielding material layer on the substrate, the method further includes: forming a shielding material layer on the first light-shielding material layer;

[0031] Etching the first light-shielding material layer to form the first light-shielding structure on the first region includes: etching the shielding material layer and the first light-shielding material layer in one etching process to form a shielding structure and a first light-shielding structure respectively, wherein the shielding structure covers the first light-shielding structure;

[0032] The method further includes: removing the shielding structure located in the middle area of ​​the substrate, and the remaining shielding structure is arranged along the edge of the substrate and covers at least a portion of the first light shielding structure located in the edge area of ​​the substrate.

[0033] The mask and the manufacturing method thereof provided by the embodiment of the present disclosure, wherein the mask comprises: a substrate, a plurality of discrete shading structures located on the substrate, and a light-transmitting area located between two adjacent shading structures; wherein the shading structure comprises at least a first shading structure and a second shading structure with different light transmittances, the material of at least one of the first shading structure and the second shading structure comprises a phase-shifting material with a light transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shifting material is provided on the substrate and the outgoing light beam passing through the light-transmitting area. The mask provided by the embodiment of the present disclosure comprises at least a first shading structure and a second shading structure with different light transmittances, and by forming shading structures with different light transmittances on the same mask, different requirements of different patterns on the light transmittance of the shading structure are met, and the quality of exposure in the photolithography process can be improved, thereby improving the performance and product yield of the semiconductor structure, while reducing the number of masks used, and reducing process steps and costs.

[0034] The details of one or more embodiments of the present disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the present disclosure will become apparent from the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A schematic diagram of the structure of a mask provided in an embodiment of the present disclosure;

[0037] Figure 2 A schematic structural diagram of a mask provided in another embodiment of the present disclosure;

[0038] Figure 3 A schematic structural diagram of a mask provided in yet another embodiment of the present disclosure;

[0039] Figure 4 A schematic structural diagram of a mask provided in yet another embodiment of the present disclosure;

[0040] Figure 5 A schematic structural diagram of a mask provided in another embodiment of the present disclosure;

[0041] Figure 6 A process flow chart of a method for manufacturing a mask provided in an embodiment of the present disclosure;

[0042] Figures 7 to 13A process flow chart of a method for manufacturing a mask provided in an embodiment of the present disclosure;

[0043] Figure 14 to Figure 15 A process flow chart of a method for manufacturing a mask provided in another embodiment of the present disclosure;

[0044] Figure 16 to Figure 17 A process flow chart of a method for manufacturing a mask provided in yet another embodiment of the present disclosure;

[0045] Figures 18 to 24 A process flow chart of a method for manufacturing a mask provided in yet another embodiment of the present disclosure;

[0046] Figure 25 to Figure 28 A process flow chart of a method for manufacturing a mask provided in another embodiment of the present disclosure;

[0047] Figure 29 to Figure 30 A process flow chart of a method for manufacturing a mask provided in accordance with yet another embodiment of the present disclosure. DETAILED DESCRIPTION

[0048] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0049] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0050] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0051] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.

[0052] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0053] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0054] In semiconductor manufacturing, photolithography is required to transfer the pattern of the mask to the wafer. The mask usually includes a transparent substrate and a light shielding structure on the transparent substrate. The light shielding structure blocks or transmits light to achieve the transfer of the pattern on the mask.

[0055] The light-shielding structure on the binary intensity mask has a light transmittance of 0, and the light-shielding structure corresponds to the non-exposure area of ​​the wafer. For some patterns with larger sizes, a bipolar mask is usually used for pattern transfer to save costs; a phase shift mask is provided with a phase shift structure with a light transmittance greater than 0, and the resolution of exposure is improved by interference destructive phase between the outgoing light beams. For some complex patterns, a phase shift structure with a lower light transmittance is usually used for exposure to reduce the error enhancement factor of the mask and reduce the influence of the error of the mask itself on the pattern formed after exposure; and for patterns with smaller critical dimensions, a phase shift structure with a higher light transmittance is required for exposure to increase the depth of focus. However, the light-shielding structure on the existing mask is made of the same material, and one mask cannot take into account the light transmittance requirements of multiple patterns on the light-shielding structure. It is often necessary to use one mask to transfer multiple patterns, or use multiple masks for multiple pattern transfers, which will reduce the performance of the semiconductor structure, affect the product yield, or increase the process steps and costs.

[0056] Based on this, the following technical solutions of the embodiments of the present disclosure are proposed. The specific implementation methods of the present disclosure are described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present disclosure in detail, for the convenience of explanation, the schematic diagram will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present disclosure.

[0057] Figure 1 A schematic diagram of the structure of a mask provided in an embodiment of the present disclosure, Figure 2 A schematic diagram of the structure of a mask provided by another embodiment of the present disclosure, Figure 3 A schematic diagram of the structure of a mask provided in yet another embodiment of the present disclosure, Figure 4 A schematic diagram of the structure of a mask provided in yet another embodiment of the present disclosure, Figure 5 A schematic diagram of the structure of a mask provided by another embodiment of the present disclosure. Figures 1 to 5 The mask provided in the embodiment of the present disclosure is further described.

[0058] like Figures 1 to 5As shown, the mask plate includes: a substrate 10, a plurality of discrete shading structures 20 located on the substrate 10, and a light-transmitting area 104 located between two adjacent shading structures 20; wherein the shading structure 20 includes at least a first shading structure 12 and a second shading structure 15 with different transmittances, the material of at least one of the first shading structure 12 and the second shading structure 15 includes a phase-shifting material with a transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shifting material is provided on the substrate 10 and the outgoing light beam passing through the light-transmitting area 104.

[0059] In actual operation, the mask provided by the embodiment of the present disclosure can be used to manufacture dynamic random access memory (DRAM), but is not limited thereto, and the mask provided by the embodiment of the present disclosure can also be used to manufacture any semiconductor structure.

[0060] In the embodiment of the present disclosure, the substrate 10 may be a transparent substrate, and the material of the transparent substrate may be quartz glass, polymer or other suitable transparent materials. The substrate 10 includes at least a first region 101 and a second region 102, the first light shielding structure 12 is located on the first region 101, and the second light shielding structure 15 is located on the second region 102. Multiple first regions 101 and multiple second regions 102 may be arranged on the same substrate 10, and the number of the first light shielding structure 12 and the second light shielding structure 15 may also be multiple.

[0061] The material of at least one of the first light-shielding structure 12 and the second light-shielding structure 15 includes a phase-shift material with a transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shift material is provided on the substrate 10 and the outgoing light beam passing through the light-transmitting area 104. Thus, when exposing the photoresist on the wafer below the mask, the light intensity in the dark area is weakened and the light intensity in the bright area is enhanced due to destructive interference between adjacent patterns on the wafer surface, thereby improving the exposure resolution.

[0062] Here, the phase shift material includes one or a combination of molybdenum oxysilicon nitride (MoSiON), molybdenum silicide (MoSi), zirconium silicon nitride (ZrSiN), titanium silicon nitride (TiSiN), silicon nitride (SiN), tantalum silicide (TaSi), tantalum nitride (TaN), etc.

[0063] In one embodiment, the materials of the first light shielding structure 12 and the second light shielding structure 15 both include a phase shift material with a transmittance greater than 0. In a specific embodiment, one of the first light shielding structure 12 and the second light shielding structure 15 has a larger transmittance, and is used to transfer patterns with smaller critical dimensions to reduce the error enhancement factor of the mask, thereby reducing the influence of the error of the mask itself on the pattern formed after exposure, and its transmittance ranges from 15% to 50% (including the endpoint values), such as 18%, 20%, 25%, 30%, 35%, 40%, 45%, etc.; the material of the other has a smaller transmittance, and is used to transfer some complex patterns to increase the focus depth of exposure, and its transmittance ranges from 3% to 15% (including the endpoint values), such as 5%, 6%, 10%, 12%, 14%, etc. In a more specific embodiment, the light transmittance of the first light shielding structure 12 is 6%, the light transmittance of the second light shielding structure 15 is 30%, and the material of the first light shielding structure 12 is molybdenum silicide, and the material of the second light shielding structure 15 is silicon nitride. However, it is not limited thereto, in some other embodiments, the light transmittance of the first light shielding structure 12 is 30%, the light transmittance of the second light shielding structure 15 is 6%, and the material of the first light shielding structure 12 is silicon nitride, and the material of the second light shielding structure 15 is molybdenum silicide.

[0064] In another embodiment of the present disclosure, the material of one of the first light shading structure 12 and the second light shading structure 15 includes a phase-shift material having a transmittance greater than 0, and the material of the other has a transmittance of 0. In some embodiments, the transmittance of the one of the first light shading structure 12 and the second light shading structure 15 whose material is a phase-shift material ranges from 3% to 15% (including the endpoint values) or from 15% to 50% (including the endpoint values), such as 5%, 6%, 10%, 12%, 14%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, etc. In actual operation, phase-shift materials with different transmittances can be selected as needed.

[0065] Here, the material of the light shielding structure 20 with a light transmittance of 0 includes one or a combination of chromium (Cr), chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide nitride (CrCN), chromium oxycarbide (CrCO), chromium oxycarbide (CrCON), molybdenum chromium (MoCr), molybdenum chromium oxide (MoCrO), molybdenum chromium nitride (MoCrN), molybdenum chromium carbide (MoCrC), or other compounds of molybdenum chromium (such as MoCrCN, MoCrCO, MoCrCON, etc.), such as chromium or chromium oxide. In the embodiment of the present disclosure, a light shielding structure 20 with a light transmittance of 0 is set on the substrate 10, which can be used to transfer patterns with larger sizes and lower resolution requirements for the exposure process.

[0066] like Figure 1 and Figure 2As shown, in one embodiment, a portion of the shading structure 20 is arranged along the edge of the substrate 10, and the material of the shading structure 20 arranged along the edge of the substrate 10 includes a phase-shift material with a transmittance greater than 0; the mask also includes: a shielding structure 13, the shielding structure 13 is arranged along the edge of the substrate 10 and covers at least a portion of the shading structure 20 arranged along the edge of the substrate 10 and the material includes a phase-shift material.

[0067] Specifically, Figure 1 As shown, the second region 102 includes the edge region of the substrate 10, a portion of the second light shielding structure 15 covers the edge region of the substrate 10, and the material of the second light shielding structure 15 includes a phase shift material with a transmittance greater than 0, and the shielding structure 13 covers a portion of the second light shielding structure 15. However, it is not limited thereto, as Figure 2 As shown, in another embodiment of the present disclosure, the first region 101 includes an edge region of the substrate 10, a portion of the first light shading structure 12 covers the edge region of the substrate 10, and the material of the first light shading structure 12 includes a phase-shift material with a transmittance greater than 0, and the shielding structure 13 covers a portion of the first light shading structure 12.

[0068] The material of the shielding structure 13 includes an opaque material, such as chromium (Cr), chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide nitride (CrCN), chromium oxycarbide (CrCO), chromium oxycarbide nitride (CrCON), molybdenum chromium (MoCr), molybdenum chromium oxide (MoCrO), molybdenum chromium nitride (MoCrN), molybdenum chromium carbide (MoCrC), or other compounds of molybdenum chromium (such as MoCrCN, MoCrCO, MoCrCON, etc.) or a combination thereof. In a specific embodiment, the material of the shielding structure 13 is chromium (Cr). The disclosed embodiment can prevent the edge area of ​​the mask from transmitting light and affecting the exposure quality by arranging the shielding structure 13 at the edge of the substrate 10 to cover part of the phase shift material.

[0069] It can be understood that when the light shielding structure 20 with a light transmittance of 0 is disposed at the edge of the substrate 10, there is no need to additionally provide the shielding structure 13. Figure 3 As shown, in a specific embodiment, the material of the first shading structure 12 is a phase-shift material with a transmittance greater than 0, the transmittance of the second shading structure 15 is 0, and the second shading structure 15 covers the edge area of ​​the substrate 10, and no additional shielding structure 13 is required on the substrate 10.

[0070] like Figures 4 to 5As shown, in another embodiment of the present disclosure, the substrate 10 also includes at least one third region 103, and the shading structure 20 also includes a third shading structure 17. The number of the third shading structures 17 can be multiple, and the multiple third shading structures 17 are separately arranged on the third region 103, and the transmittance of the third shading structure 17 is different from the transmittance of the first shading structure 12 and the second shading structure 15.

[0071] In one embodiment, the materials of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 all include a phase shift material with a transmittance greater than 0. In some embodiments, the transmittance of one of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 is between 5% and 15% (including the endpoint value), such as 5%, 6%, 10%, 12%, 14%, etc.; the transmittance of the material of the other is between 15% and 30% (including the endpoint value), such as 18%, 20%, 25%, etc.; the transmittance of the material of the other is between 30% and 50% (including the endpoint value), such as 35%, 40%, 45%, etc. In actual operation, a phase shift material with a suitable transmittance can be selected according to the size, complexity or shape of the pattern to be transferred.

[0072] However, it is not limited thereto. In some other embodiments, the transmittance of one of the first light shielding structure 12, the second light shielding structure 15, and the third light shielding structure 17 is 0, which is used to transfer patterns with larger sizes and lower resolution requirements for the exposure process. The materials of the other two include phase shift materials with a transmittance greater than 0, which are used to transfer patterns that require higher exposure resolution. In a specific embodiment, the transmittance of one of the other two is in the range of 15% to 50% (including the endpoint values), such as 18%, 20%, 25%, 30%, 35%, 40%, 45%, etc., which is used to transfer patterns with smaller critical dimensions to reduce the error enhancement factor of the mask and reduce the influence of the error of the mask itself on the pattern formed after exposure; the transmittance of the material of the other one of the other two is in the range of 3% to 15% (including the endpoint values), such as 5%, 6%, 10%, 12%, 14%, etc., which is used to transfer some complex patterns to improve the focus depth of exposure.

[0073] In one embodiment, when one of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 is made of a phase shift material and covers the edge region of the substrate 10, a shielding structure 13 may be disposed along the edge of the substrate 10, and the shielding structure 13 covers at least a portion of the light shielding structure 20 disposed along the edge of the substrate 10. Figure 4As shown, in a specific embodiment, the third region 103 includes the edge region of the substrate 10, the third shading structure 17 also covers the edge region of the substrate 10, and the material of the third shading structure 17 includes a phase shift material, and the shielding structure 13 is arranged along the edge of the substrate 10 and covers a portion of the third shading structure 17.

[0074] However, the present invention is not limited thereto. When one of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 having a light transmittance of 0 is disposed at the edge region of the substrate 10, there is no need to additionally provide the shielding structure 13. Figure 5 As shown, in a specific embodiment, the third region 103 includes the edge region of the substrate 10 , the third shading structure 17 also covers the edge region of the substrate 10 , and the transmittance of the third shading structure 17 is 0, and no additional shielding structure 13 is required on the substrate 10 .

[0075] It should be noted that the substrate 10 may further have more shading structures 20 with different light transmittances, such as a fourth shading structure, a fifth shading structure, a sixth shading structure, etc. The disclosed embodiment forms shading structures 20 with different light transmittances on the same mask, thereby satisfying different requirements of different patterns for the light transmittance of the shading structure 20, improving the quality of exposure in the photolithography process, reducing the number of masks used and the steps of pattern transfer, thereby improving the performance of the semiconductor structure and the product yield, while reducing the number of masks used, and reducing the process steps and costs.

[0076] In one embodiment, the mask further includes: an etch stop layer 11, covering the surface of the substrate 10, and a plurality of light shielding structures 20 are located on the etch stop layer 11, and the etch stop layer 11 plays a role in protecting the substrate 10 to avoid damaging the surface of the substrate 10 when forming the light shielding structures 20. The material of the etch stop layer 11 includes a material with high light transmittance, such as one or a combination of calcium-doped ruthenium oxide or boron-doped titanium nitride. In some embodiments, the light transmittance of the etch stop layer 11 ranges from 80% to 100% (including the endpoint values), such as 90%, 98%, etc.

[0077] The present disclosure also provides a method for manufacturing a mask. Figure 6 As shown, the manufacturing method comprises the following steps:

[0078] Step S101, providing a substrate;

[0079] Step S102, forming a plurality of discrete shading structures on the substrate, and defining the area between adjacent shading structures as a light-transmitting area; wherein the shading structure includes at least a first shading structure and a second shading structure with different transmittances, and the material of at least one of the first shading structure and the second shading structure includes a phase-shift material with a transmittance greater than 0, and there is a 180° phase difference between an outgoing light beam passing through a position on the substrate where the phase-shift material is provided and an outgoing light beam passing through the light-transmitting area.

[0080] Figures 7 to 13 A process flow chart of a method for manufacturing a mask provided in an embodiment of the present disclosure, Figure 14 to Figure 15 A process flow chart of a method for manufacturing a mask provided in another embodiment of the present disclosure, Figure 16 to Figure 17 A process flow chart of a method for manufacturing a mask provided in yet another embodiment of the present disclosure, Figures 18 to 24 A process flow chart of a method for manufacturing a mask provided in yet another embodiment of the present disclosure, Figure 25 to Figure 28 A process flow chart of a method for manufacturing a mask provided in another embodiment of the present disclosure, Figure 29 to Figure 30 A process flow chart of a method for manufacturing a mask provided by another embodiment of the present disclosure. Figures 7 to 30 The method for manufacturing the mask according to the embodiment of the present disclosure is further described in detail.

[0081] First, execute step S101, such as Figure 7 As shown, a substrate 10 is provided.

[0082] Here, the substrate 10 may be a transparent substrate, and the material of the transparent substrate may be quartz glass, polymer or other suitable transparent materials.

[0083] In one embodiment, the substrate 10 includes at least a first region 101 and a second region 102. A plurality of first regions 101 and a plurality of second regions 102 may be disposed on the same substrate 10. Figure 7 As shown, in a specific embodiment, the second region 102 includes an edge region of the substrate 10 .

[0084] Next, execute step S102, such as Figures 8 to 13 As shown, a plurality of discrete shading structures 20 are formed on the substrate 10, and the area between adjacent shading structures 20 is defined as a light-transmitting area 104; wherein the shading structure 20 includes at least a first shading structure 12 and a second shading structure 15 with different transmittances, and the material of at least one of the first shading structure 12 and the second shading structure 15 includes a phase-shift material with a transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shift material is provided on the substrate 10 and the outgoing light beam passing through the light-transmitting area 104.

[0085] Specifically, a plurality of discrete light shielding structures 20 are formed on the substrate 10, including:

[0086] A first light shielding material layer 12′ (eg, Figure 8 );

[0087] The first light shielding material layer 12′ is etched to form a first light shielding structure 12 (eg, Fig. 9 );

[0088] A first protective layer 14 is formed, and the first protective layer 14 covers the substrate 10 and the first light shielding structure 12 located in the first area 101, and exposes the second area 102 (such as Fig.10 );

[0089] A second light shielding material layer 15' is formed, and the second light shielding material layer 15' covers the substrate 10 located in the second region 102 and the first protective layer 14 located in the first region 101 (eg Fig.11 );

[0090] The second light shielding material layer 15′ is etched to form a second light shielding structure 15 (eg, Figure 12 to Figure 13 ).

[0091] See again Figure 8 In one embodiment, before forming the first light-shielding material layer 12′ on the substrate 10, it also includes: forming an etch stop layer 11 on the substrate 10, and the light-shielding structure 20 is formed on the etch stop layer 11. The etch stop layer 11 plays a role in protecting the substrate 10 to prevent the surface of the substrate 10 from being contaminated or damaged in subsequent processes. The material of the etch stop layer 11 includes a material with high light transmittance, such as one or a combination of calcium-doped ruthenium oxide or boron-doped titanium nitride. In some embodiments, the transmittance of the etch stop layer 11 ranges from 80% to 100% (including the endpoint values), such as 90%, 98%, etc.

[0092] The first protection layer 14 covers the first region 101 and is used to protect the first light shielding structure 12 to prevent the first light shielding structure 12 from being contaminated or damaged in subsequent processes. The material of the first protection layer 14 includes photoresist.

[0093] See again Figures 11 to 13 In actual operation, the second light shielding material layer 15′ can be etched by the following method to form the second light shielding structure 15: first, the second light shielding material layer 15′ is subjected to an etch-back or polishing process to make the second light shielding material layer 15′ have a preset thickness, and the first protective layer 14 is removed to form a second light shielding structure 15. Fig.12 The structure shown; then, the remaining second light shielding material layer 15 ′ is etched to form a second light shielding structure 15 .

[0094] But not limited to this, such as Figure 14 to Figure 15 As shown, a second light-shielding material layer 15′ having a preset thickness may also be directly deposited; then, the second light-shielding material layer 15′ is etched to at least remove the second light-shielding material layer 15′ located on the first region 101, and the first protective layer 14 is removed; then, the remaining second light-shielding material layer 15′ is etched to form a second light-shielding structure 15, as shown in FIG. Fig.13 The structure shown.

[0095] There may be a plurality of first light-shielding structures 12 and a plurality of second light-shielding structures 15 . The plurality of first light-shielding structures 12 are disposed separately on the first region 101 , and the plurality of second light-shielding structures 15 are disposed separately on the second region 102 .

[0096] The material of at least one of the first light-shielding structure 12 and the second light-shielding structure 15 includes a phase-shift material with a transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shift material is provided on the substrate 10 and the outgoing light beam passing through the light-transmitting area 104. Thus, when exposing the photoresist on the wafer below the mask, the light intensity in the dark area is weakened and the light intensity in the bright area is enhanced due to destructive interference between adjacent patterns on the wafer surface, thereby improving the exposure resolution.

[0097] Here, the phase shift material includes one or a combination of molybdenum oxysilicon nitride (MoSiON), molybdenum silicide (MoSi), zirconium silicon nitride (ZrSiN), titanium silicon nitride (TiSiN), silicon nitride (SiN), tantalum silicide (TaSi), tantalum nitride (TaN), etc.

[0098] In one embodiment, the materials of the first light shielding structure 12 and the second light shielding structure 15 both include a phase shift material with a transmittance greater than 0. In a specific embodiment, one of the first light shielding structure 12 and the second light shielding structure 15 has a larger transmittance and is used to transfer patterns with smaller critical dimensions to reduce the error enhancement factor of the mask and reduce the influence of the error of the mask itself on the pattern formed after exposure. Its transmittance ranges from 15% to 50% (including the endpoint values), such as 18%, 20%, 25%, 30%, 35%, 40%, 45%, etc.; the material of the other has a smaller transmittance and is used to transfer some complex patterns to increase the focus depth of exposure. Its transmittance ranges from 3% to 15% (including the endpoint values), such as 5%, 6%, 10%, 12%, 14%, etc. In a more specific embodiment, the light transmittance of the first light shielding structure 12 is 6%, the light transmittance of the second light shielding structure 15 is 30%, and the material of the first light shielding structure 12 is molybdenum silicide, and the material of the second light shielding structure 15 is silicon nitride. However, it is not limited thereto, in some other embodiments, the light transmittance of the first light shielding structure 12 is 30%, the light transmittance of the second light shielding structure 15 is 6%, and the material of the first light shielding structure 12 is silicon nitride, and the material of the second light shielding structure 15 is molybdenum silicide.

[0099] In another embodiment of the present disclosure, the material of one of the first light shielding structure 12 and the second light shielding structure 15 includes a phase-shift material having a light transmittance greater than 0, and the material of the other light shielding structure has a light transmittance of 0. In some embodiments, the light transmittance of the one of the first light shielding structure 12 and the second light shielding structure 15 whose material is a phase-shift material ranges from 3% to 15% (including the endpoint values) or from 15% to 50% (including the endpoint values), such as 5%, 6%, 10%, 12%, 14%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, etc. In actual operation, materials with different light transmittances can be selected as needed.

[0100] Here, the material of the light shielding structure 20 with a light transmittance of 0 includes one or a combination of chromium (Cr), chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide nitride (CrCN), chromium oxycarbide (CrCO), chromium oxycarbide (CrCON), molybdenum chromium (MoCr), molybdenum chromium oxide (MoCrO), molybdenum chromium nitride (MoCrN), molybdenum chromium carbide (MoCrC), or other compounds of molybdenum chromium (such as MoCrCN, MoCrCO, MoCrCON, etc.), such as chromium or chromium oxide. In the embodiment of the present disclosure, a light shielding structure 20 with a light transmittance of 0 is set on the substrate 10, which can be used to transfer patterns with larger sizes and lower resolution requirements for the exposure process.

[0101] like Figure 16 to Figure 17 As shown, in one embodiment, part of the light shielding structure 20 is arranged along the edge of the substrate 10, and the material of the light shielding structure 20 arranged along the edge of the substrate 10 includes a phase shift material with a transmittance greater than 0; after forming a plurality of discrete light shielding structures 20 on the substrate 10, it also includes:

[0102] forming a shielding material layer 13 ′, wherein the shielding material layer 13 ′ covers the light shielding structure 20 and the light-transmitting area 104 ;

[0103] The shielding material layer 13 ′ located in the middle area of ​​the substrate 10 is removed to form a shielding structure 13 . The shielding structure 13 is disposed along the edge of the substrate 10 and covers at least a portion of the light shielding structure 20 located at the edge of the substrate 10 .

[0104] See again Figures 16 to 17In a specific embodiment, the second region 102 includes an edge region of the substrate 10, a portion of the second light shielding structure 15 covers the edge region of the substrate 10, the material of the second light shielding structure 15 is a phase-shift material, and the shielding structure 13 covers a portion of the second light shielding structure 15. However, not limited thereto, in some other embodiments, the first region 101 includes an edge region of the substrate 10, a portion of the first light shielding structure 12 covers the edge region of the substrate 10, the material of the first light shielding structure 12 is a phase-shift material, and the shielding structure 13 covers a portion of the first light shielding structure 12.

[0105] The material of the shielding structure 13 includes an opaque material, such as chromium (Cr), chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide nitride (CrCN), chromium oxycarbide (CrCO), chromium oxycarbide nitride (CrCON), molybdenum chromium (MoCr), molybdenum chromium oxide (MoCrO), molybdenum chromium nitride (MoCrN), molybdenum chromium carbide (MoCrC), or other compounds of molybdenum chromium (such as MoCrCN, MoCrCO, MoCrCON, etc.) or a combination thereof. In a specific embodiment, the material of the shielding structure 13 is chromium (Cr). The disclosed embodiment can prevent the edge area of ​​the mask from transmitting light and affecting the exposure quality by arranging the shielding structure 13 at the edge of the substrate 10 to cover part of the phase shift material.

[0106] It can be understood that when the light shielding structure 20 with a light transmittance of 0 is disposed at the edge of the substrate 10, there is no need to additionally provide the shielding structure 13. Fig.13 Taking the structure shown as an example, in a specific embodiment, the material of the first shading structure 12 is a phase-shift material with a transmittance greater than 0, the transmittance of the second shading structure 15 is 0, and the second shading structure 15 covers the edge area of ​​the substrate 10, and no additional shielding structure 13 is required on the substrate 10.

[0107] Figure 16 to Figure 17 The shielding structure 13 shown in the figure is formed after the light shielding structure 20 is formed. However, it is not limited thereto. When the first region 101 includes an edge region of the substrate 10, a portion of the first light shielding structure 12 covers the edge region of the substrate 10, and the material of the first light shielding structure 12 includes a phase shift material, the shielding structure 13 can also be formed while the first light shielding structure 12 is formed.

[0108] Specifically, Fig.18 As shown, after forming the first light shielding material layer 12 ′ on the substrate 10 , the method further includes: forming a shielding material layer 13 ′ on the first light shielding material layer 12 ′.

[0109] Next, if Fig.19As shown, the shielding material layer 13 ′ and the first light shielding material layer 12 ′ are etched in one etching process to form the shielding structure 13 and the first light shielding structure 12 respectively, and the shielding structure 13 covers the first light shielding structure 12 .

[0110] Specifically, in actual operation, a patterned mask layer (not shown) may be formed on the shielding material layer 13 ′, and then the shielding material layer 13 ′ and the first light shielding material layer 12 ′ may be etched using the patterned mask layer (not shown) as a mask.

[0111] Compared with forming the shielding structure 13 after forming the light shielding structure 20 , the embodiment of the present disclosure forms the shielding structure 13 while forming the first light shielding structure 12 , thereby saving an etching process and reducing the process cost.

[0112] Next, if Fig. 20 As shown, the shielding structure 13 located in the middle area of ​​the substrate 10 is removed, and the remaining shielding structure 13 is arranged along the edge of the substrate 10 and covers at least a portion of the first light shielding structure 12 located in the edge area of ​​the substrate 10 .

[0113] Next, if Fig.21 As shown, a first protective layer 14 is formed, and the first protective layer 14 covers the substrate 10 and the first light shielding structure 12 in the first region 101 and exposes the second region 102. In some embodiments, the first protective layer 14 also covers the shielding structure 13.

[0114] Next, if Fig. 22 As shown, a second light shielding material layer 15 ′ is formed, and the second light shielding material layer 15 ′ covers the substrate 10 located in the second area 102 and the first protection layer 14 located in the first area 101 .

[0115] Next, if Fig.23 As shown, the second light shielding material layer 15 ′ is etched to remove at least the second light shielding material layer 15 ′ located in the first region 101 , and the first protection layer 14 is removed.

[0116] Next, if Fig.24 As shown, the remaining second light shielding material layer 15 ′ located in the second region 102 is etched to form a second light shielding structure 15 .

[0117] In yet another embodiment of the present disclosure, the substrate 10 further includes a third region 103. Specifically, Figure 25 to Figure 28 As shown, the substrate 10 is subjected to the following steps: Figures 8 to 13 The steps shown in the figure, after forming the first light shielding structure 12 on the first area 101 and the second light shielding structure 15 on the second area 102, form a plurality of discrete light shielding structures 20 on the substrate 10, and further include:

[0118] A second protective layer 16 is formed, and the second protective layer 16 covers the substrate 10 and the first light shielding structure 12 and the second light shielding structure 15 located in the first area 101 and the second area 102, and exposes the third area 103 (such as Fig.25 );

[0119] A third light-shielding material layer 17′ is formed, and the third light-shielding material layer 17′ covers the third region 103 and the second protective layer 16 located in the first region 101 and the second region 102; wherein the light transmittance of the third light-shielding material layer 17′ is different from the light transmittance of the first light-shielding structure 12 and the second light-shielding structure 15 (e.g. Fig.26 );

[0120] The third light shielding material layer 17′ is etched to form a third light shielding structure 17 (eg, Figure 27 to Figure 28 ).

[0121] The second protective layer 16 covers the first region 101 and the second region 102, and is used to protect the first light shielding structure 12 and the second light shielding structure 15, so as to prevent the first light shielding structure 12 and the second light shielding structure 15 from being contaminated or damaged in subsequent processes. The material of the second protective layer 16 includes photoresist.

[0122] See again Figure 27 to Figure 28 In actual operation, the third light shielding material layer 17′ can be etched by the following method to form the third light shielding structure 17: first, the third light shielding material layer 17′ is etched back or polished to make the third light shielding material layer 17′ have a preset thickness, and the second protective layer 16 is removed to form a third light shielding structure 17. Fig. 27 The structure shown; then, the remaining third light shielding material layer 17 ′ is etched to form a third light shielding structure 17 .

[0123] However, the present invention is not limited thereto. Alternatively, a third light-shielding material layer 17′ having a preset thickness may be directly deposited. Then, the third light-shielding material layer 17′ is etched to at least remove the third light-shielding material layer 17′ located on the first region 101 and the second region 102, and the second protective layer 16 is removed. Then, the remaining third light-shielding material layer 17′ is etched to form a third light-shielding structure 17. Fig.28 The structure shown.

[0124] In one embodiment, the materials of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 all include a phase shift material with a transmittance greater than 0. In some embodiments, the transmittance of one of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 is between 5% and 15% (including the endpoint value), such as 5%, 6%, 10%, 12%, 14%, etc.; the transmittance of the material of the other is between 15% and 30% (including the endpoint value), such as 18%, 20%, 25%, etc.; the transmittance of the material of the other is between 30% and 50% (including the endpoint value), such as 35%, 40%, 45%, etc. In actual operation, a phase shift material with a suitable transmittance can be selected according to the size, complexity or shape of the pattern to be transferred.

[0125] However, it is not limited thereto. In some other embodiments, the transmittance of one of the first light shielding structure 12, the second light shielding structure 15, and the third light shielding structure 17 is 0, which is used to transfer patterns with larger sizes and lower resolution requirements for the exposure process. The materials of the other two include phase shift materials with a transmittance greater than 0, which are used to transfer patterns that require higher exposure resolution. In a specific embodiment, the transmittance of one of the other two is in the range of 15% to 50% (including the endpoint values), such as 18%, 20%, 25%, 30%, 35%, 40%, 45%, etc., which is used to transfer patterns with smaller critical dimensions to reduce the error enhancement factor of the mask and reduce the influence of the error of the mask itself on the pattern formed after exposure; the transmittance of the material of the other one of the other two is in the range of 3% to 15% (including the endpoint values), such as 5%, 6%, 10%, 12%, 14%, etc., which is used to transfer some complex patterns to improve the focus depth of exposure.

[0126] like Figure 29 to Figure 30 As shown, in one embodiment, when one of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 is a phase shift material and covers the edge position of the substrate 10, after forming the light shielding structure 20, the method further includes:

[0127] forming a shielding material layer 13 ′, wherein the shielding material layer 13 ′ covers the light shielding structure 20 and the light-transmitting area 104 ;

[0128] The shielding material layer 13 ′ located in the middle area of ​​the substrate 10 is removed to form a shielding structure 13 . The shielding structure 13 is disposed along the edge of the substrate 10 and covers at least a portion of the light shielding structure 20 located in the edge area of ​​the substrate 10 .

[0129] See again Fig.30In a specific embodiment, the third region 103 includes an edge region of the substrate 10, the third shading structure 17 also covers the edge region of the substrate 10, and the material of the third shading structure 17 includes a phase shift material, and the shielding structure 13 is arranged along the edge of the substrate 10 and covers a portion of the third shading structure 17.

[0130] However, it is not limited to this, when the first region 101 includes the edge region of the substrate 10, part of the first shading structure 12 covers the edge region of the substrate 10, and the material of the first shading structure 12 includes a phase shift material, the shielding structure 13 can also be formed while forming the first shading structure 12, and then the second shading structure 15 and the third shading structure 17 can be formed.

[0131] When one of the first light shielding structure 12, the second light shielding structure 15 and the third light shielding structure 17 with a light transmittance of 0 is disposed at the edge region of the substrate 10, there is no need to additionally provide the shielding structure 13. Fig.28 Taking the structure shown as an example, in a specific embodiment, the third region 103 includes the edge region of the substrate 10, the third shading structure 17 also covers the edge region of the substrate 10, and the transmittance of the third shading structure 17 is 0, and no additional shielding structure 13 is required on the substrate 10.

[0132] It should be noted that the substrate 10 may further have more shading structures 20 with different light transmittances, such as a fourth shading structure, a fifth shading structure, a sixth shading structure, etc. The disclosed embodiment forms shading structures 20 with different light transmittances on the same mask, thereby meeting different requirements of different patterns for the light transmittance of the shading structure 20, improving the quality of exposure in the photolithography process, thereby improving the performance of the semiconductor structure and the product yield, while reducing the number of masks used, and reducing process steps and costs.

[0133] It should be noted that the above is only a preferred embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A mask, characterized in that: include: A substrate, a plurality of discrete light-shielding structures located on the substrate, and a light-transmitting area located between two adjacent light-shielding structures; wherein, The shading structure includes at least a first shading structure and a second shading structure with different transmittances, and the material of at least one of the first shading structure and the second shading structure includes a phase-shift material with a transmittance greater than 0, and there is a 180° phase difference between the outgoing light beam passing through the position where the phase-shift material is provided on the substrate and the outgoing light beam passing through the light-transmitting area.

2. The mask according to claim 1, characterized in that: The materials of the first light-shielding structure and the second light-shielding structure both include a phase-shift material with a light transmittance greater than 0.

3. The mask according to claim 1, characterized in that: The light-shielding structure also includes: a third light-shielding structure, the transmittance of the third light-shielding structure is different from the transmittance of the first light-shielding structure and the second light-shielding structure; wherein the transmittance of one of the first light-shielding structure, the second light-shielding structure and the third light-shielding structure is 0, or the materials of the first light-shielding structure, the second light-shielding structure and the third light-shielding structure are all phase-shift materials.

4. The mask according to claim 1, characterized in that: The material of one of the first light shielding structure and the second light shielding structure includes a phase shift material with a light transmittance greater than 0, and the material of the other light shielding structure has a light transmittance of 0.

5. The mask according to claim 1, characterized in that: The mask also includes an etch stop layer covering the surface of the substrate, and the plurality of light shielding structures are located on the etch stop layer.

6. The mask according to claim 5, characterized in that: The light transmittance of the etching stop layer ranges from 80% to 100%.

7. The mask according to claim 1, characterized in that: The mask further includes a shielding structure, which is disposed along an edge of the substrate and covers at least a portion of the light shielding structure disposed along the edge of the substrate and made of a phase-shifting material.

8. A method for manufacturing a mask, characterized in that: include: providing a substrate; A plurality of discrete shading structures are formed on the substrate, and an area between adjacent shading structures is defined as a light-transmitting area; wherein the shading structure comprises at least a first shading structure and a second shading structure with different transmittances, a material of at least one of the first shading structure and the second shading structure comprises a phase-shift material with a transmittance greater than 0, and an outgoing light beam passing through a position on the substrate where the phase-shift material is provided has a phase difference of 180° with an outgoing light beam passing through the light-transmitting area.

9. The manufacturing method according to claim 8, characterized in that: The substrate includes a first region and a second region; a plurality of discrete light shielding structures are formed on the substrate, including: forming a first light-shielding material layer on the substrate; Etching the first light-shielding material layer to form the first light-shielding structure on the first region; forming a first protective layer, wherein the first protective layer covers the substrate and the first light shielding structure located in the first area and exposes the second area; forming a second light-shielding material layer, wherein the second light-shielding material layer covers the substrate located in the second area and the first protective layer located in the first area; The second light-shielding material layer is etched to form the second light-shielding structure on the second region.

10. The manufacturing method according to claim 9, characterized in that: The substrate further includes a third region; a plurality of discrete light shielding structures are formed on the substrate, and further includes: forming a second protective layer, wherein the second protective layer covers the substrate located in the first region and the second region and the first light shielding structure and the second light shielding structure, and exposes the third region; forming a third light-shielding material layer, the third light-shielding material layer covering the third region and the first protective layer located in the first region and the second region; wherein the light transmittance of the third light-shielding material layer is different from the light transmittance of the first light-shielding structure and the second light-shielding structure; The third light-shielding material layer is etched to form a third light-shielding structure in the third region.

11. The manufacturing method according to claim 8, characterized in that: Before forming a plurality of light shielding structures on the substrate, the method further includes: forming an etch stop layer on the substrate, wherein the light shielding structures are formed on the etch stop layer.

12. The manufacturing method according to claim 8, characterized in that: Part of the shading structure is arranged along the edge of the substrate, and the material of the shading structure arranged along the edge of the substrate includes a phase shift material with a transmittance greater than 0; after forming a plurality of discrete shading structures on the substrate, the method further includes: forming a shielding material layer, wherein the shielding material layer covers the light shielding structure and the light-transmitting area; The shielding material layer located in the middle area of ​​the substrate is removed to form a shielding structure, which is arranged along the edge of the substrate and covers at least a portion of the light shielding structure located in the edge area of ​​the substrate.

13. The manufacturing method according to claim 9, characterized in that: The first region includes an edge region of the substrate, a portion of the first light-shielding structure covers the edge region of the substrate, and a material of the first light-shielding structure includes a phase-shift material with a light transmittance greater than 0; After forming a first light-shielding material layer on the substrate, the method further includes: forming a shielding material layer on the first light-shielding material layer; Etching the first light-shielding material layer to form the first light-shielding structure on the first region includes: etching the shielding material layer and the first light-shielding material layer in one etching process to form a shielding structure and a first light-shielding structure respectively, wherein the shielding structure covers the first light-shielding structure; The method further includes: removing the shielding structure located in the middle area of ​​the substrate, and the remaining shielding structure is arranged along the edge of the substrate and covers at least a portion of the first light shielding structure located in the edge area of ​​the substrate.

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